06-06-2023 дата публикации
Номер: CN116219136A
Принадлежит:
The invention discloses a strain-induced oriented silicon steel Gaussian grain growth method, and belongs to the technical field of oriented silicon steel production. The invention discloses a strain-induced oriented silicon steel Gaussian grain growth method. The method comprises the steps of smelting and casting, rough rolling, hot rolling, normalizing annealing, cold rolling, decarburizing annealing, critical deformation, high-temperature annealing, flat stretching and magnetic domain refining. A critical deformation process is added after decarburization annealing, and the reduction rate is 1.0%-5.5%. A critical deformation area is formed in the plate after critical deformation, sub-grains are formed in Goss grains in the area, the sub-grains take low distortion energy as driving force during high-temperature annealing, the grain boundary migration rate is increased, the stability of abnormal growth of the Goss grains is improved, and the rejection rate of oriented silicon steel products ...
Подробнее