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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 15. Отображено 15.
06-03-2017 дата публикации

SEMICONDUCTOR LAMINATED STRUCTURE, AND METHOD AND APPARATUS FOR SEPARATING NITRIDE SEMICONDUCTOR LAYER USING SAME

Номер: KR1020170023920A
Автор: YOON, EUI JOON, MOON, DAE YOUNG, JANG, JEONG HWAN, PARK, YONG JO, BAE, DUK KYU
Принадлежит:

The present invention relates to a semiconductor laminated structure, and a method and an apparatus for separating a nitride semiconductor layer using the same. The semiconductor laminated structure comprises: a monocrystal substrate which is different from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define an empty cavity between the inorganic thin film and the substrate, and of which some parts are crystalized in a crystal structure like the substrate; and a nitride semiconductor layer grew from the crystalized inorganic thin film on the empty cavity. According to the present invention, the substrate and the nitride semiconductor layer are mechanically separated. The mechanical separation can be performed by the methods of: applying power to the substrate and the nitride semiconductor layer in a vertical direction; applying power in a horizontal direction; applying power of relative circular movement; and a combination thereof. COPYRIGHT KIPO 2017 ...

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Номер записи: 1
24-03-2016 дата публикации

INTELLIGENT HUMANOID ROBOT

Номер: KR1020160032608A
Автор: MOON, DAE YOUNG, PARK, HYE RYEON, KIM, HO YEON JI KI, KIM, HONG KYU, SHIN, HYE SU, PARK, SEN, CHOI, YEO JIN, CHOI, JIN WOO
Принадлежит:

The present invention provides an intelligent humanoid robot which improves accuracy and stability of grasping a location, grasping a mission, and performing a mission. The intelligent humanoid robot comprises: a planning module generating a mission performing plan of a robot based on sensor data; an action module controlling a motion of the robot in accordance with an indication of a planning module; a robot communication module processing cooperation between the robots based on data through map reading; and a vision recognition module generating reference data making a determination in order for the robot to perform a mission based on the image data of a camera. COPYRIGHT KIPO 2016 ...

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Номер записи: 2
21-12-2016 дата публикации

METHOD AND APPARATUS FOR ANALYZING SENTENCE STRESS

Номер: KR1020160146356A
Автор: BYEON, JIN YEONG, KIM, SANG HA, CHOI, JAE WOO, MOON, DAE YOUNG, KIM, HYUN SOO
Принадлежит:

The present invention relates to an apparatus and a method for converting a rhythm. According to the present invention, a method for learning speaking in foreign language using rhythm conversion comprises the steps of: obtaining a first sentence and a second sentence as a voice; extracting a corresponding morpheme commonly included in the first sentence and the second sentence; extracting a rhythm component of the corresponding morpheme of the first sentence; extracting a rhythm component of the corresponding morpheme of the second sentence corresponding to the rhythm component of the corresponding morpheme of the first sentence; and converting the rhythm component of the corresponding morpheme of the first sentence to enable the rhythm component of the corresponding morpheme of the first sentence to be substantially identical to the rhythm component of the corresponding morpheme of the second sentence. COPYRIGHT KIPO 2016 (AA) Energy (dB) (BB) Duration (S) (CC) Representative resonance ...

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Номер записи: 3
18-10-2018 дата публикации

INTEGRATED CIRCUIT INCLUDING HETEROGENEOUS CONTACTS AND SEMICONDUCTOR DEVICE INCLUDING SAME

Номер: KR1020180114478A
Автор: KIM, TAE HYUNG, DO, JUNG HO, MOON, DAE YOUNG, BAECK, SANG YEOP, LIM, JAE HYUN, CHOI, JAE SEUNG, HAN, SANG SHIN
Принадлежит:

An integrated circuit according to an exemplary embodiment of the present disclosure includes a plurality of conductive lines including first and second conductive lines as the plurality of conductive lines extended in a first horizontal direction on a plane separated on a gate line, a source/drain contact including lower and upper source/drain contacts connected to each other in a vertical direction with a lower side connected to a source/drain region, and a gate contact extended in a vertical direction with a lower side connected to the gate line. The upper source/drain contact is located under the first conductive line, and the gate contact is located under the second conductive line. Accordingly, the present invention can obtain a layout suitable for a miniaturized semiconductor process. COPYRIGHT KIPO 2018 ...

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Номер записи: 4
09-08-2017 дата публикации

SEMICONDUCTOR DEVICE TO SELECTIVELY PERFORM INSULATION AND LAYOUT METHOD THEREOF

Номер: KR1020170091487A
Автор: BAECK, SANG YEOP, KIM, TAE HYUNG, MOON, DAE YOUNG, SEO, DONG WOOK, LEE, IN HAK, CHOI, HYUN SU, SONG, TAE JOONG, CHOI, JAE SEUNG, KANG, JUNG MYUNG, KIM, HOON, YU, JI SU, JANG, SUN YUNG
Принадлежит:

The present invention is to provide a layout of a semiconductor device, which operates selectively as an insulation circuit or a driving circuit. A system on chip of the present invention may comprise a first semiconductor device and a second semiconductor device. According to the present invention, the first semiconductor device may comprise: an active area formed on a substrate to extend in a first direction; and a first gate electrode and a second gate electrode to extend in a second direction, which is vertical to the first direction, and to be arranged in the first direction on the active area. The second semiconductor device may comprise: a third gate electrode and a fourth gate electrode to extend in the second direction and to be arranged in the first direction on the active area. A first transistor formed by the first gate electrode and a third transistor formed by the third gate electrode may operate as a normal transistor. A second transistor formed by the second gate electrode ...

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Номер записи: 5
24-10-2016 дата публикации

METHOD AND APPARATUS FOR MEASURING PRONUNCIATION SIMILARITY

Номер: KR1020160122542A
Автор: CHOI, JAE WOO, KIM, HYUN SOO, CHO, KYONG IL, JUNG, YO WON, LEE, KANG KYU, MOON, DAE YOUNG, KEUM, MYUNG CHUL, KIM, KI KON, BYEON, JIN YEONG, YOUN, JEH SEON, LEE, HANG SEOP
Принадлежит:

The present invention relates to a method and apparatus for measuring pronunciation similarity. According to the present invention, the method for measuring pronunciation similarity comprises the steps of: receiving a user′s voice data corresponding to reference voice data; generating first voice processed data by processing the reference voice data with a voice recognition algorithm, and generating second voice processed data by processing the user′s voice data with the voice recognition algorithm; comparing each of the first voice processed data and the second voice processed data with learning target language data, and producing first similarity and second similarity in which any one of pronunciation, intonation, accent and speed is evaluated; and comparing the first similarity with the second similarity, and measuring final similarity between the reference voice data and the user′s voice data. In English study such as listening and speaking, the method and apparatus for measuring pronunciation ...

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Номер записи: 6
10-03-2025 дата публикации

반도체 소자

Номер: KR20250033757A
Автор: 반유민, 문대영, 서창우, 송수연, 황형준
Принадлежит:

... 본 발명의 기술적 사상에 의해, 반도체 소자가 제공된다. 반도체 소자는 기판; 상기 기판 내에서 소자 분리막에 의해 정의되는 활성 영역; 상기 기판 내에서 제1 수평 방향으로 연장되는 워드 라인; 상기 기판 상에서 상기 제1 수평 방향과 교차하는 제2 수평 방향으로 연장되고, 금속계 도전 패턴을 포함하는 비트 라인; 상기 금속계 도전 패턴의 측벽 상에 배치되는 제1 스페이서; 상기 제1 스페이서 상에 배치되는 제2 스페이서; 상기 활성 영역을 노출하는 다이렉트 콘택 홀 내에 배치되고, 상기 비트 라인을 상기 활성 영역에 연결하는 다이렉트 콘택; 및 상기 다이렉트 콘택 홀 내에서, 상기 다이렉트 콘택의 하부 측벽 상에 배치되는 매립 스페이서를 포함하고, 상기 제2 스페이서는 상기 다이렉트 콘택의 측벽 상에서 상기 다이렉트 콘택의 상기 측벽과 접촉하는 것을 특징으로 한다.

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Номер записи: 7
29-02-2016 дата публикации

FLUSH TYPE NOZZLE FOR WASHING DECK

Номер: KR1020160021955A
Автор: CHOI, YONG GYU, PARK, MYUNG SOO, KIM, CHOONG RAE, JEON, BYUNG YOON, KIM, GU SEOP, MOON, DAE YEONG, YEO, IN UK
Принадлежит:

The present invention relates to a flush type nozzle for washing a deck, having a cover to prevent a foreign substance from being introduced into an inlet of a nozzle, wherein the cover is automatically opened and closed by sea water used for washing a deck. To achieve this, according to the present invention, the flush type nozzle for washing a deck comprises: a nozzle unit composed of a nozzle of which an inlet is exposed on a deck, a vertical pipe connected to a lower portion of the nozzle, a deflector fixated to an internal space of the nozzle, and a bar through hole formed in the center of the deflector; and a nozzle cover unit composed of a nozzle cover opening and closing the inlet of the nozzle, a vertical bar movably fixated to the bar through hole, of which an upper end is fixated to a rear surface of the nozzle cover, and a weight fixated to a lower end of the vertical bar and movably inserted into the vertical pipe. COPYRIGHT KIPO 2016 ...

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Номер записи: 8
22-01-2016 дата публикации

SEMICONDUCTOR STACK STRUCTURE, AND METHOD AND APPARATUS FOR SEPARATING NITRIDE SEMICONDUCTOR USING SAME

Номер: KR1020160008382A
Автор: YOON, EUI JOON, MOON, DAE YOUNG, JANG, JEONG HWAN, PARK, YONG JO, BAE, DUK KYU
Принадлежит:

A substrate stack structure according to the present invention includes a single crystalline substrate different from a nitride semiconductor; and an inorganic thin film which is defined on a substrate to define a cavity integrated between the substrates and is partially crystallized with the same crystal structure as the substrate, and a nitride semiconductor layer which is grown from the inorganic thin film crystallized on the cavity. A method and an apparatus for separating a nitride semiconductor layer according to the present invention mechanically separate a substrate from the nitride semiconductor layer. The mechanical separation can be performed by a method for separating the substrate and the nitride semiconductor layer by applying a vertical force, a method for separating the substrate and the nitride semiconductor layer by applying a horizontal force, a method for separating the substrate and the nitride semiconductor layer by applying the force of a relative circular motion, ...

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Номер записи: 9
01-02-2023 дата публикации

선택적으로 절연 기능을 수행하는 반도체 소자 및 그 레이아웃 배치 방법

Номер: KR102493815B1
Автор: 백상엽, 김태형, 문대영, 서동욱, 이인학, 최현수, 송태중, 최재승, 강정명, 김훈, 유지수, 장선영
Принадлежит: 삼성전자주식회사

... 본 발명의 시스템 온 칩은 제 1 반도체 소자 및 제 2 반도체 소자 포함할 수 있다. 제 1 반도체 소자는 기판 상에 제 1 방향으로 연장하도록 형성되는 활성 영역, 그리고 제 1 방향에 수직인 제 2 방향으로 연장하고 활성 영역 상에 제 1 방향을 따라 배치되는 제 1 게이트 전극 내지 제 2 게이트 전극을 포함할 수 있다. 제 2 반도체 소자는 제 2 방향으로 연장하고 활성 영역 상에 제 1 방향을 따라 배치되는 제 3 게이트 전극 및 제 4 게이트 전극을 포함할 수 있다. 제 1 게이트 전극에 의해 형성되는 제 1 트랜지스터 및 제 3 게이트 전극에 의해 형성되는 제 3 트랜지스터는 노말 트랜지스터로써 동작할 수 있다. 제 2 게이트 전극에 의해 형성되는 제 2 트랜지스터는 턴-오프 되어, 제 1 트랜지스터를 제 1 트랜지스터에 인접한 다른 소자와 전기적으로 절연시키고, 제 4 게이트 전극에 의해 형성되는 제 4 트랜지스터는 노말 트랜지스터로서 동작할 수 있다.

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Номер записи: 10
21-09-2016 дата публикации

SEMICONDUCTOR DEVICE, LAYOUT SYSTEM, AND STANDARD CELL LIBRARY

Номер: KR1020160109974A
Автор: LEE, DAE SEONG, MOON, DAE YOUNG, KIM, MIN SU
Принадлежит:

A semiconductor device, a layout system, and a standard cell library are provided. The low area semiconductor device operated with low power comprises: a substrate; a first transistor gated at a reversed voltage level of a first input signal, and pulling up a first node; a second transistor gated at a voltage level of a second input signal, and pulling down the first node; a third transistor gated at a reversed voltage level of the second input signal, and pulling up the first node; a fourth transistor gated at a voltage level of the first input signal, and pulling down the first node; a fifth transistor gated at the voltage level of the second input signal, and pulling down a second node; a sixth transistor gated at the reversed voltage level of the first input signal, and pulling up the second node; a seventh transistor gated at the voltage level of the first input signal, and pulling down the second node; and an eight transistor gated at the reversed voltage level of the second input ...

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Номер записи: 11
14-12-2017 дата публикации

반도체 적층 구조, 이를 이용한 질화물 반도체층 분리방법 및 장치

Номер: KR0101809252B1
Автор: 윤의준, 문대영, 장정환, 박용조, 배덕규
Принадлежит: 서울대학교산학협력단, 주식회사 헥사솔루션

... 본 발명에 따른 반도체 적층 구조는 질화물 반도체와 이종인 단결정 기판, 기판과의 사이에 빈 공간(cavity)이 정의되도록 기판 상에 형성되고 기판과 같은 결정 구조로 적어도 일부 결정화된 무기물 박막, 및 빈 공간 위의 결정화된 무기물 박막 상에서부터 성장된 질화물 반도체층을 포함한다. 본 발명에 따른 질화물 반도체층 분리방법 및 장치는 기판과 질화물 반도체층 사이를 기계적으로 분리시킨다. 기계적인 분리는 기판과 질화물 반도체층에 수직 방향 힘을 주어 분리하는 방법, 수평 방향의 힘을 주어 분리하는 방법, 상대적인 원운동의 힘을 주어 분리하는 방법, 또는 그 조합의 방법으로 수행할 수 있다.

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Номер записи: 12
26-03-2025 дата публикации

NON-COMBUSTIBLE WATER BARRIER SHEET WITH EXPANSION AND WATERPROOFING FUNCTIONS AND METHOD OF MANUFACTURING THE NON-COMBUSTIBLE WATER BARRIER SHEET

Номер: KR20250041901A
Автор: 문대영, 이응육
Принадлежит:

... 본 발명의 일 실시예에 따른, 아크릴바인더가 코팅된 유리섬유층; 및 유리섬유층에 발포된 난연팽창바인더층으로 구성되되, 난연팽창바인더층은 점착을 위한 원료로 부틸고무(중량비 20%~30%), 팽창을 위한 원료로 흑연(중량비 5%~10%), 점성을 위한 원료로 아타폴자이트(중량비 5%~10%) 및 기설정된 난연제로 구성된다.

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Номер записи: 13
21-01-2016 дата публикации

SEMICONDUCTOR STACKING STRUCTURE, AND METHOD AND APPARATUS FOR SEPARATING NITRIDE SEMICONDUCTOR LAYER USING SAME

Номер: WO2016010323A1
Автор: YOON, Eui-Joon, MOON, Dae-Young, JANG, Jeong-Hwan, PARK, Yongjo, BAE, Duk-Kyu
Принадлежит:

A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination ...

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Номер записи: 14
19-04-2023 дата публикации

듀얼 포트 에스램 셀 및 그의 설계 방법

Номер: KR20230052125A
Автор: 이어진, 문대영, 당호영, 김태형
Принадлежит:

... 본 개시의 기술적 사상의 일측면에 따른 집적회로는, 제1 방향으로 차례로 상호 이격하여 배치되고, 제1 방향에 수직한 제2 방향으로 연장되고, 각각에 적어도 하나의 트랜지스터가 형성되는 제1 내지 제6 P형 액티브 패턴(P-Type Active Pattern)을 포함하고, 제2 P형 액티브 패턴은, 듀얼 포트 에스램 셀의 제1 경계에 가깝게 배치된 제1 컷팅부에 의해 절단되고, 제5 P형 액티브 패턴은, 제1 경계의 반대편 경계인 제2 경계에 가깝게 배치된 제2 컷팅부에 의해 절단된다.

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Номер записи: 15