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Применить Всего найдено 26. Отображено 26.
28-12-2018 дата публикации

화장품케이스용 거울 및 그 제조방법

Номер: KR0101933564B1
Автор: 박홍순, 윤주형
Принадлежит: 박홍순, 윤주형

... 본 발명에 의한 화장품케이스용 거울 제조방법은, 필름원단의 일면 일부에 동판을 인쇄하는 제1 단계; 상기 동판이 인쇄된 필름원단의 일면에 보호테이프를 라미네이팅하는 제2 단계; 상기 보호테이프의 외측면에 코로나 방전을 하는 제3 단계; 상기 보호테이프의 외측면에 점착제를 도포하여 보호필름을 제작하는 제4 단계; 상기 점착제가 거울원판의 반사면에 점착되도록 상기 보호필름을 거울원판의 표면에 부착시키는 제5 단계; 및 보호필름이 부착된 거울원판을 스크라이빙하는 제6 단계;를 포함한다. 본 발명에 의한 화장품케이스용 거울은, 사전에 설정된 범위 이내의 투명도를 갖는 필름원단과, 상기 필름원단의 저면에 인쇄되는 동판과, 상기 동판이 인쇄된 상기 필름원단의 저면 전체를 덮도록 코팅되는 보호테이프와, 상기 보호테이프의 저면을 코로나 방전시킨 이후 상기 보호테이프의 저면에 도포되는 점착제로 구성되는 보호필름; 및 상기 점착제가 반사면에 점착되도록 상기 보호필름이 부착되는 거울원판;을 포함한다.

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Номер записи: 1
28-08-2015 дата публикации

WAFER CARRIER

Номер: KR1020150098432A
Автор: SON, MIN HYEOK, YOON, JU HYUNG
Принадлежит:

Disclosed is a wafer carrier used in a metal organic chemical vapor deposition (MOCVD) apparatus. The wafer carrier comprises: a susceptor; a first internal wafer pocket having a central unit placed along an internal concentric circle of the susceptor; and a first external wafer pocket and a second external wafer pocket having a central unit placed along an external concentric circle of the susceptor. The central unit of the first internal wafer pocket is in a fan-shaped area defined by a line connecting the central unit of the susceptor and the central unit of the first external wafer pocket, and a line connecting the central unit of the susceptor and the central unit of the second external wafer pocket. The distance from the central unit of the first internal wafer pocket to the central unit of the first external wafer pocket is different from the distance from the central unit of the first internal wafer pocket to the central unit of the second external wafer pocket. According to the ...

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Номер записи: 2
07-03-2016 дата публикации

POLISHING SLURRY COMPOSITION

Номер: KR1020160024465A
Автор: YOON, JOO HYOUNG, HONG, SEUNG CHUL, YOON, YOUNG HO, PAIK, UN GYU, SEO, JI HOON, KIM, KI JUNG
Принадлежит:

The present invention relates to a polishing slurry composition. The polishing slurry composition of the present invention comprises: a polishing particle; an oxidizing agent including an electron acceptor compound; and an oxidation accelerator. Provided in the present invention is a polishing slurry composition, capable of reducing metal short and etch defects by improving the topography of a tungsten membrane used for high K metal gate (HKMG) without using hydrogen peroxide, and performing a highly integrated process. COPYRIGHT KIPO 2016 (AA) Polishing particle (BB) Electron acceptor compound ...

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Номер записи: 3
14-12-2016 дата публикации

HETEROJUNCTION PHOTODETECTOR AND MANUFACTURING METHOD THEREOF

Номер: KR1020160143602A
Автор: KIM, JOON DONG, YUN, JU HYUNG, KIM, HONG SIK
Принадлежит:

According to the present invention, provided are a heterojunction photodetector with improved conversion efficiency and a manufacturing method thereof. The heterojunction photodetector comprises: a Ge substrate; a metallic thin film formed on the Ge substrate and forming a Schottky junction with the Ge substrate; and a transparent conductive layer formed on the metallic thin film to form a heterojunction with the Ge substrate. The transparent conductive layer includes a first transparent conductive layer formed on the Ge substrate and including a first material, and a second transparent conductive layer formed on the first transparent conductive layer and including a second material different from the first material. The first and the second material include at least one among indium tin oxide (ITO), Al-doped zinc oxide (AZO), tin oxide, In_2O_3, Pt, Au, and indium zinc oxide (IZO). COPYRIGHT KIPO 2016 ...

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Номер записи: 4
08-10-2018 дата публикации

MIRROR FOR COSMETIC CASE AND METHOD FOR MANUFACTURING SAME

Номер: KR1020180109211A
Автор: PARK, HONG SOON, YOON, JOO HYUNG
Принадлежит:

According to the present invention, a method for manufacturing a mirror for a cosmetic case comprises: a first step of printing a copper plate on a part of one surface of a film fabric; a second step of laminating a protective tape on one surface of the film fabric on which the copper plate is printed; a third step of corona-discharging the outer surface of the protective tape; a fourth step of manufacturing a protective film by applying an adhesive to the outer surface of the protective tape; a fifth step of attaching the protective film to the surface of a mirror disk such that the adhesive adheres to a reflective surface of the mirror disk; and a sixth step of scribing the mirror disk to which the protective film is attached. According to the present invention, the mirror for a cosmetic case comprises: a protective film including a film fabric having transparency within a preset range, a copper plate printed on the bottom surface of the film fabric, a protective tape coated to cover ...

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Номер записи: 5
07-03-2016 дата публикации

POLISHING SLURRY COMPOSITION

Номер: KR1020160024745A
Автор: YOON, JOO HYOUNG, HONG, SEUNG CHUL, YOON, YOUNG HO, PAIK, UN GYU, SEO, JI HOON, KIM, KI JUNG
Принадлежит:

The present invention relates to a polishing slurry composition. The polishing slurry composition of the present invention comprises: a polishing particle; and an oxidizing agent. The composition is capable of polishing tungsten with the thickness of 10 to 1,000 Å, and improving the topography of the tungsten. COPYRIGHT KIPO 2016 ...

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Номер записи: 6
08-07-2015 дата публикации

SLURRY COMPOSITION INCLUDING NON-SPHERICAL POLISHING PARTICLES

Номер: KR1020150077542A
Автор: YOON, YOUNG HO, YOON, JOO HYOUNG, PARK, HAN TEO, LEE, HYE HEE, KIM, HYUN JI, HWANG, JIN SOOK, LEE, JAE WOO, PARK, GWANG SU
Принадлежит:

The present invention relates to a non-spherical polishing particle and a slurry composition including the same and, more specifically, a slurry composition for polishing copper films and a flexible film including spherical polishing particles and non-spherical polishing particles wherein the non-spherical particle is 10 % of the total polishing particles. COPYRIGHT KIPO 2015 ...

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Номер записи: 7
07-03-2016 дата публикации

POROUS POLISHING PARTICLE AND POLISHING SLURRY COMPOSITION HAVING SAME

Номер: KR1020160024473A
Автор: YOON, JOO HYOUNG, HONG, SEUNG CHUL, YOON, YOUNG HO, PAIK, UN GYU, SEO, JI HOON
Принадлежит:

The present invention relates to a porous polishing particle and a polishing slurry composition having the same. More specifically, the polishing slurry composition improves dispersion stability by impregnating a pro-oxidant inside a pore of the porous polishing particle and topography of tungsten. COPYRIGHT KIPO 2016 ...

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Номер записи: 8
27-09-2016 дата публикации

연마 슬러리 조성물

Номер: KR0101660384B1
Автор: 홍승철, 윤주형, 윤영호, 백운규, 서지훈, 김기정, 이강천
Принадлежит: 주식회사 케이씨텍, 한양대학교 산학협력단

... 본 발명은 연마 슬러리 조성물에 관한 것으로서, 본 발명의 연마 슬러리 조성물은 제1 연마입자, 제2 연마입자, 제3 연마입자 중 적어도 둘 이상의 연마입자; 및 산화제;를 포함하고, 상기 제1 연마입자의 1차 입도는 20 nm 이상 45 nm미만이고, 상기 제2 연마입자의 1차 입도는 45 nm 이상 130 nm미만이고, 상기 제3 연마입자의 1차 입도는 130 nm 이상 250 nm미만인 것이다.

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Номер записи: 9
02-12-2016 дата публикации

연마 슬러리 조성물

Номер: KR0101682097B1
Автор: 윤주형, 홍승철, 윤영호, 백운규, 서지훈, 김기정
Принадлежит: 주식회사 케이씨텍, 한양대학교 산학협력단

... 본 발명은 연마 슬러리 조성물에 관한 것으로서, 본 발명의 연마 슬러리 조성물은 연마입자; 전자 수용 화합물을 포함하는 산화제; 및 산화촉진제;를 포함한다.

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Номер записи: 10
03-03-2016 дата публикации

POLISHING SLURRY COMPOSITION

Номер: WO2016032145A1
Автор: YOON, Joo Hyoung, HONG, Seung Chul, YOON, Young Ho, PAIK, Un Gyu, SEO, Ji Hoon, KIM, Ki Jung, LEE, Kang Cheon
Принадлежит:

The present invention relates to a polishing slurry composition. A polishing slurry composition according to a first aspect of the present invention comprises abrasive particles and an oxidant, polishes tungsten having a thickness of 10-1,000 Å, and improves the topography of tungsten. Additionally, the polishing slurry composition according to a second aspect of the present invention comprises: at least two abrasive particles among first abrasive particles, second abrasive particles and third abrasive particles; and an oxidant, wherein the primary particle size of the first abrasive particles is 20 nm or more and less than 45 nm, the primary particle size of the second abrasive particles is 45 nm or more and less than 130 nm, and the primary particle size of the third abrasive particles is 130 nm or more and less than 250 nm.

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Номер записи: 11
08-09-2016 дата публикации

다공성 연마입자 및 이를 포함하는 연마용 슬러리 조성물

Номер: KR0101655849B1
Автор: 윤주형, 홍승철, 윤영호, 백운규, 서지훈
Принадлежит: 주식회사 케이씨텍, 한양대학교 산학협력단

... 본 발명은, 다공성 연마입자 및 이를 포함하는 연마용 슬러리 조성물에 관한 것으로, 더욱 상세하게는, 다공성 연마입자의 기공 내에 산화촉진제가 함침되어 분산안정성을 높이고, 텅스텐의 토포그래피를 개선시킬 수 있는, 다공성 연마입자 및 이를 포함하는 연마용 슬러리 조성물에 관한 것이다.

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Номер записи: 12
17-05-2017 дата публикации

CLEANING SOLUTION COMPOSITION

Номер: KR1020170053891A
Автор: LEE, HYE HEE, YOON, JOO HYOUNG, HAN, MYEONG HOON
Принадлежит:

The present invention relates to a cleaning solution composition. The cleaning solution composition according to one embodiment of the present invention comprises organic acid, an anionic surfactant, and a pH adjusting agent, and is used in a cleaning process after chemical mechanical polishing of a wafer including a metal wiring in an acid region, to remove abrasive particles and metal contaminants, and to ensure surface roughness characteristics and uniformity, while having no influence on a metal film, especially a tungsten film. In addition, corrosion of the metal wiring is prevented without separate addition of a corrosion inhibitor. COPYRIGHT KIPO 2017 ...

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Номер записи: 13
08-07-2015 дата публикации

ABRASIVE PARTICLES WITH SURFACE REFORMED AND SLURRY COMPOSITION CONTAINING SAME

Номер: KR1020150077541A
Автор: YOON, YOUNG HO, YOON, JOO HYOUNG, LEE, JAE WOO, PARK, GWANG SU, PARK, JIN HWAN, HWANG, JIN SOOK, PARK, HAN TEO
Принадлежит:

The present invention relates to abrasive particles with surfaces reformed using a polymer, and a slurry composition containing the abrasive particles. According to the present invention, the surfaces of soft abrasive particles can be reformed to manufacture a slurry composition used in chemical mechanical polishing (CMP) of a copper layer, a copper barrier, and a flexible dielectric layer. Especially, the abrasive particles with surfaces reformed according to the present invention exhibits a superior polishing rate for a cooper layer in an acidic region and inhibits the generation of dishing, corrosion, or scratch to keep the surface of a layer to be polished in an excellent state. COPYRIGHT KIPO 2015 (DD) End (CC) Coat colloidal particles with polymers whose surfaces are reformed (BB) Prepare a colloidal particle solution by dispersing abrasive particles in a disperse solution (AA) Start ...

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Номер записи: 14
20-08-2015 дата публикации

HIGH-EFFICIENCY PHOTOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING SAME

Номер: WO2015122581A1
Автор: KIM, Joon Dong, YUN, Ju Hyung
Принадлежит:

The present invention relates to a photoelectric element and a method for manufacturing the same, and the photoelectric element according to the present invention comprises: a semiconductor substrate; and transparent conductor pattern portions formed on a surface of the semiconductor substrate to be connected to each other with a specific cycle such that incident light is concentrated in a specific area of the semiconductor substrate.

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Номер записи: 15
02-11-2016 дата публикации

CATALYST COMPOSITION FOR TUNGSTEN POLISHING SLURRY AND CHEMICAL MECHANICAL PLANARIZATION SLURRY COMPOSITION INCLUDING SAME

Номер: KR1020160126206A
Автор: HONG, SEUNG CHUL, YOON, JOO HYOUNG, YOON, YOUNG HO, HAN, MYEONG HOON, KIM, DAE YOUNG
Принадлежит:

The present invention relates to a catalyst composition for tungsten polishing slurry, and to a chemical mechanical planarization (CMP) slurry composition including the same. According to one aspect of the present invention, the catalyst composition for tungsten polishing slurry includes a vanadium compound or a composite including the same. According to another aspect of the present invention, the CMP slurry composition includes: the catalyst composition for tungsten polishing slurry; a polishing particle; and an oxidizer. COPYRIGHT KIPO 2016 (AA) Comparative example 1 (BB) Comparative example 2 (CC) Example ...

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Номер записи: 16
28-09-2016 дата публикации

POLISHING SLURRY COMPOSITION

Номер: KR1020160112136A
Автор: HONG, SEUNG CHUL, YOON, JOO HYOUNG, YOON, YOUNG HO, HAN, MYEONG HOON, KIM, DAE YOUNG
Принадлежит:

The present invention relates to a polishing slurry composition. According to an embodiment of the present invention, the polishing slurry composition includes: a polishing particle surface-modified by metal ions; an oxidizer; and a pH regulator. According to the present invention, metal ions chemically bonds to a surface of the polishing particles so as to surface-modify the polishing particles, thereby having high stability under an acidic condition. The surface of the polishing particles has charge identical to the surface of the tungsten film, and thus metal impurities and residual polishing particles are not formed due to repulsive force, thereby improving adsorption properties of polishing particles for the surface of the tungsten after the polishing process. COPYRIGHT KIPO 2016 ...

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Номер записи: 17
19-10-2016 дата публикации

METAL-SUBSTITUTED POLISHING PARTICLE, PRODUCTION METHOD THEREOF, AND POLISHING SLURRY COMPOSITION CONTAINING METAL-SUBSTITUTED POLISHING PARTICLE

Номер: KR1020160121229A
Автор: KONG, HYUN GOO, YUN, YOUNG HO, YOON, JOO HYOUNG, KIM, DAE YOUNG, PAIK, UN GYU, SEO, JI HOON, KIM, KI JUNG, LEE, KANG CHEON
Принадлежит:

The present invention relates to a metal-substituted polishing particle, a production method thereof, and a polishing slurry composition containing the metal-substituted polishing particle. According to an embodiment of the present invention, the metal-substituted polishing particle includes metal ions contained some portions of the polishing particle. According to the present invention, the metal-substituted polishing particle shows excellent dispersion stability and outstanding polishing ability. COPYRIGHT KIPO 2016 ...

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Номер записи: 18
08-12-2016 дата публикации

HETEROJUNCTION PHOTODETECTOR AND METHOD OF MANUFACTURING SAME

Номер: WO2016195190A1
Автор: KIM, Joon Dong, YUN, Ju Hyung, KIM, Hong Sik
Принадлежит:

The present invention relates to a heterojunction photodetector and a method of manufacturing same. The heterojunction photodetector includes a germanium substrate, and a transparent electrode layer formed on a germanium oxide film and forming a heterojunction with the germanium substrate. Also, the transparent conductive layer is formed on the germanium oxide film, and comprises: a first transparent electrode layer including a first material; and a second transparent electrode layer formed on the first transparent electrode layer and including a second material different from the first material.

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Номер записи: 19
12-01-2017 дата публикации

이종접합 포토 디텍터 및 그 제조방법

Номер: KR0101695714B1
Автор: 김준동, 윤주형, 김홍식
Принадлежит: 인천대학교 산학협력단

... 이종접합 포토 디텍터 및 그 제조방법을 제공한다. 상기 이종접합 포토 디텍터는 저마늄(Ge) 기판, 상기 저마늄 기판 상에 형성되고, 상기 저마늄 기판과 쇼트키 접합(Schottky Junction)을 형성하는 금속 박막 및 상기 금속 박막 상에 형성되어 상기 저마늄 기판과 이종접합(hetero junction)을 이루는 투명 전도층을 포함하되, 상기 투명 전도층은, 상기 저마늄 기판 상에 형성되고, 제1 물질을 포함하는 제1 투명 전도층과, 상기 제1 투명 전도층 상에 형성되고, 상기 제1 물질과 다른 제2 물질을 포함하는 제2 투명 전도층을 포함하고, 상기 제1 및 제2 물질은 각각 ITO, AZO, 산화주석(tin-oxide), 산화 인듐(In2O3), Pt, Au 또는 IZO(Indium-zinc-oxide) 중에서 적어도 하나를 포함한다.

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Номер записи: 20
17-08-2016 дата публикации

신뢰성 있는 발광 다이오드 및 그것을 제조하는 방법

Номер: KR0101648948B1
Автор: 김광중, 한창석, 최승규, 남기범, 김남윤, 김경해, 윤주형
Принадлежит: 서울바이오시스 주식회사

... 본 발명의 일 태양에 따른 발광 다이오드는, 실리콘이 도핑된 n형 콘택층; p형 콘택층; n형 콘택층과 p형 콘택층 사이에 개재된 활성 영역; n형 콘택층과 활성 영역 사이에 개재된 초격자층; 초격자층과 n형 콘택층 사이에 개재된 언도프트 중간층; 및 언도프트층과 초격자층 사이에 개재된 전자 보강층을 포함한다. 초격자층은 활성 영역에 가장 가까운 마지막 층에만 의도적으로 실리콘이 도핑되며, 마지막 층의 실리콘 도핑 농도는 n형 콘택층의 실리콘 도핑 농도보다 높다. 활성 영역에 가깝게 위치하는 초격자층의 거의 모든 층에 실리콘을 의도적으로 도핑하지 않기 때문에 누설 전류를 감소시킬 수 있으며, 활성 영역에 가장 가까운 마지막층에 고농도의 실리콘을 도핑함으로써 접합(junction) 특성이 나빠지는 것을 방지하여 정전 방전 특성을 개선할 수 있다.

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Номер записи: 21
11-05-2016 дата публикации

POLISHING SLURRY COMPOSITION

Номер: KR1020160050648A
Автор: HONG, SEUNG CHUL, YOON, JOO HYOUNG, YOON, YOUNG HO, PAIK, UN GYU, SEO, JI HOON, KIM, KI JUNG, LEE, KANG CHEON
Принадлежит:

The present invention relates to a polishing slurry composition. The polishing slurry composition comprises: at least two polishing particles among a first polishing particles, a second polishing particles, and a third polishing particles; and an oxidizing agent. A first size of the first polishing particles is 20 nm or more and less than 45 nm. A first size of the second polishing particles is 45 nm or more and less than 130 nm. A first size of the third polishing particles is 130 nm or more and less than 250 nm. The polishing slurry composition can reduce metal short and defects in etching generated by topography of a tungsten film by improving the topography of the tungsten film, and can enable a second generation high integration process. COPYRIGHT KIPO 2016 ...

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Номер записи: 22
14-07-2011 дата публикации

LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

Номер: KR2011083940A2
Автор: KIM, Kwang Joong, HAN, Chang Suk, CHOI, Seung Kyu, NAM, Ki Bum, KIM, Nam Yoon, KIM, Kyung Hae, YOON, Ju Hyung, YE, Kyung Hee
Принадлежит:

Disclosed are a reliable light-emitting diode and a method for manufacturing same. The light-emitting diode according to one embodiment of the present invention comprises: a silicon-doped n-type contact layer; a p-type contact layer; an active region interposed between the n-type contact layer and the p-type contact layer; a super-lattice layer interposed between the n-type contact layer and the active region; a non-doped intermediate layer interposed between the super-lattice layer and the n-type contact layer; and an electronic reinforcement layer interposed between the non-doped intermediate layer and the super-lattice layer. Only the final layer of the super-lattice layer, which is closest to the active region, is intentionally doped with silicon, and the silicon-doped concentration of the final layer is higher than the silicon-doped concentration of the n-type contact layer. Almost all layers of the super=lattice layer which is close to the active region are intentionally not doped ...

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Номер записи: 23
14-07-2011 дата публикации

LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

Номер: WO2011083940A3
Автор: KIM, Kwang Joong, HAN, Chang Suk, CHOI, Seung Kyu, NAM, Ki Bum, KIM, Nam Yoon, KIM, Kyung Hae, YOON, Ju Hyung, YE, Kyung Hee
Принадлежит:

Disclosed are a reliable light-emitting diode and a method for manufacturing same. The light-emitting diode according to one embodiment of the present invention comprises: a silicon-doped n-type contact layer; a p-type contact layer; an active region interposed between the n-type contact layer and the p-type contact layer; a super-lattice layer interposed between the n-type contact layer and the active region; a non-doped intermediate layer interposed between the super-lattice layer and the n-type contact layer; and an electronic reinforcement layer interposed between the non-doped intermediate layer and the super-lattice layer. Only the final layer of the super-lattice layer, which is closest to the active region, is intentionally doped with silicon, and the silicon-doped concentration of the final layer is higher than the silicon-doped concentration of the n-type contact layer. Almost all layers of the super=lattice layer which is close to the active region are intentionally not doped ...

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Номер записи: 24
29-06-2017 дата публикации

CLEANING SOLUTION COMPOSITION

Номер: KR1020170074003A
Автор: YOON, JOO HYOUNG, LEE, HYE HEE
Принадлежит:

The present invention relates to a cleaning solution composition. According to an embodiment of the present invention, the cleaning solution composition comprises an amine-containing compound a chelating agent and an anti-corrosive agent; is used in a cleaning process after chemical mechanical polishing processing of a water containing tungsten; prevents oxidation and corrosion of tungsten by alkalinity having a negative zeta potential; and can remove remnant particles, organic residues and metal pollutants after polishing a tungsten film without etching metal, leaving deposits or contaminating the wafer. Also, the cleaning solution composition effectively prevents redeposition on the wafter after removing pollutants and can improve defects occurring in postprocess. COPYRIGHT KIPO 2017 ...

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Номер записи: 25
06-07-2017 дата публикации

CLEANING SOLUTION COMPOSITION

Номер: KR1020170077501A
Автор: BAE, SUNG SU, YOON, JOO HYOUNG
Принадлежит:

The present invention relates to a cleaning solution composition, and specifically, the cleaning solution composition according to one embodiment of the present invention comprises: a sulfoxide-based compound; an amide-based compound; an aromatic carboxylic acid compound; and an alkyl or aromatic amine compound, is an alkaline substance having negative zeta potential including a compound which is not harmful to a human body and has excellent chemical bonding ability with metal, and is used in a cleaning process after chemical and mechanical polishing of a wafer containing tungsten, thereby increasing adhesion with the wafer and improving a cleaning effect for removing residual particles, organic residues and metal contaminants after polishing a tungsten film. COPYRIGHT KIPO 2017 ...

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Номер записи: 26