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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 48. Отображено 41.
29-08-2017 дата публикации

Thermal compression bonding process cooling manifold

Номер: US0009748199B2
Автор: Hemanth Dhavaleswarapu, Zhihua Li, Joseph Petrini, Steven B. Roach, Shankar Devasenathipathy, George Kostiew, Amram Eitan, DHAVALESWARAPU HEMANTH, LI ZHIHUA, PETRINI JOSEPH, ROACH STEVEN B, DEVASENATHIPATHY SHANKAR, KOSTIEW GEORGE, EITAN AMRAM, Dhavaleswarapu Hemanth, Li Zhihua, Petrini Joseph, Roach Steven B., Devasenathipathy Shankar, Kostiew George, Eitan Amram
Принадлежит: Intel Corporation, INTEL CORP

Embodiments of a thermal compression bonding (TCB) process cooling manifold, a TCB process system, and a method for TCB using the cooling manifold are disclosed. In some embodiments, the cooling manifold comprises a pre-mixing chamber that is separated from a mixing chamber by a baffle. The baffle may comprise at least one concentric pattern formed through the baffle such that the primary cooling fluid in the pre-mixing chamber is substantially evenly distributed to the mixing chamber. The pre-mixing chamber may be coupled to a source of primary cooling fluid. The mixing chamber may have an input configured to accept the primary cooling fluid and an output to output the primary cooling fluid.

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Номер записи: 1
06-09-2016 дата публикации

High performance transient uniform cooling solution for thermal compression bonding process

Номер: US0009434029B2
Автор: Zhihua Li, Hemanth K. Dhavaleswarapu, Joseph B. Petrini, Shankar Devasenathipathy, Steven B. Roach, Ioan Sauciuc, Pranav K. Desai, George S. Kostiew, Sanjoy K. Saha, LI ZHIHUA, DHAVALESWARAPU HEMANTH K, PETRINI JOSEPH B, DEVASENATHIPATHY SHANKAR, ROACH STEVEN B, SAUCIUC IOAN, DESAI PRANAV K, KOSTIEW GEORGE S, SAHA SANJOY K, Li Zhihua, Dhavaleswarapu Hemanth K., Petrini Joseph B., Devasenathipathy Shankar, Roach Steven B., Sauciuc Ioan, Desai Pranav K., Kostiew George S., Saha Sanjoy K.
Принадлежит: Intel Corporation, LI ZHIHUA, DHAVALESWARAPU HEMANTH K, PETRINI JOSEPH B, DEVASENATHIPATHY SHANKAR, ROACH STEVEN B, SAUCIUC IOAN, DESAI PRANAV K, KOSTIEW GEORGE S, SAHA SANJOY K, INTEL CORP, Li Zhihua, Dhavaleswarapu Hemanth K., Petrini Joseph B., Devasenathipathy Shankar, Roach Steven B., Sauciuc Ioan, Desai Pranav K., Kostiew George S., Saha Sanjoy K.

Various embodiments of thermal compression bonding transient cooling solutions are described. Those embodiments include a an array of vertically separated micro channels coupled to a heater surface, wherein every outlet micro channel comprises two adjacent inlet micro channel, and wherein an inlet and outlet manifold are coupled to the array of micro channels, and wherein the heater surface and the micro channels are coupled within the same block.

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Номер записи: 2
19-01-2017 дата публикации

HIGH PERFORMANCE TRANSIENT UNIFORM COOLING SOLUTION FOR THERMAL COMPRESSION BONDING PROCESS

Номер: US20170014957A1
Автор: Zhihua Li, Hemanth K. Dhavaleswarapu, Joseph B. Petrini, Shankar Devasenathipathy, Steven B. Roach, Ioan Sauciuc, Pranav K. Desai, George S. Kostiew, Sanjoy K. Saha, LI ZHIHUA, DHAVALESWARAPU HEMANTH K, PETRINI JOSEPH B, DEVASENATHIPATHY SHANKAR, ROACH STEVEN B, SAUCIUC IOAN, DESAI PRANAV K, KOSTIEW GEORGE S, SAHA SANJOY K, Li Zhihua, Dhavaleswarapu Hemanth K., Petrini Joseph B., Devasenathipathy Shankar, Roach Steven B., Sauciuc Ioan, Desai Pranav K., Kostiew George S., Saha Sanjoy K.
Принадлежит: Intel Corporation

Various embodiments of thermal compression bonding transient cooling solutions are described. Those embodiments include a an array of vertically separated micro channels coupled to a heater surface, wherein every outlet micro channel comprises two adjacent inlet micro channel, and wherein an inlet and outlet manifold are coupled to the array of micro channels, and wherein the heater surface and the micro channels are coupled within the same block. 1. An assembly comprising:a cooling block comprising an array of vertical micro channels jets coupled to a heater surface, wherein an outlet micro channel jet of the array is coupled with an adjacent inlet micro channel jet of the array; andan inlet and outlet manifold coupled to the array of vertical micro channel jets, wherein the heater surface and the array of vertical micro channel jets are coupled in the same block material, wherein the heater surface comprises a plurality of micro fins, and wherein a tip of each micro fin is aligned in a center position between adjacent inlet and outlet micro channel jets.2. The assembly of claim 1 , wherein each outlet micro channel jet is coupled with two adjacent micro channel jets.3. The assembly of claim 1 , wherein inlet and outlet micro channel jets are disposed in a staggered configuration.4. The assembly of claim 1 , wherein a bottom portion of each inlet and outlet micro channel jet is chamfered.5. The assembly of claim 1 , wherein the vertical micro channel jets comprise vertical individual inlet and outlet nozzles attached to the heater surface.6. The assembly of claim 1 , further comprises a nozzle coupled to the heater claim 1 , and a die coupled to the nozzle claim 1 , wherein the die is on a substrate disposed on a pedestal.7. The assembly of claim 5 , wherein the assembly comprises a portion of a TCB bonding system.8. The assembly of claim 1 , wherein a TEC pad is disposed between the heater surface and the cooling block of the assembly.9. An assembly comprising:a ...

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Номер записи: 3
14-11-2013 дата публикации

HIGH PERFORMANCE TRANSIENT UNIFORM COOLING SOLUTION FOR THERMAL COMPRESSION BONDING PROCESS

Номер: US20130299133A1
Автор: Desai Pranav K., Devasenathipathy Shankar, Dhavaleswarapu Hemanth K., Kostiew George S., Li Zhihua, Petrini Joseph B., Roach Steven B., Saha Sanjoy K., Sauciuc Ioan
Принадлежит:

Various embodiments of thermal compression bonding transient cooling solutions are described. Those embodiments include a an array of vertically separated micro channels coupled to a heater surface, wherein every outlet micro channel comprises two adjacent inlet micro channel, and wherein an inlet and outlet manifold are coupled to the array of micro channels, and wherein the heater surface and the micro channels are coupled within the same block. 1. A method of uniform transient cooling in a thermal compressionbonding process comprising;cooling the solder joint of a die during thermal compression bonding by a die backside surface by coupling a cooling solution to the die backside surface, wherein the cooling solution comprises:an vertical array of micro channel jets coupled to a heater surface, wherein an outlet micro channel jet is coupled with two adjacent inlet micro channel jets; andcirculating air through the array of micro channel jets , wherein the air impinges onto the heater surface that is coupled to the die and exits through a manifold coupled to the micro channel jets, wherein the heater surface and the array of micro channel jets are fabricated in the same block material.2. The method of claim 1 , further comprising wherein an exit and an inlet manifold is coupled to the array of micro channel jets.3. The method of further comprising wherein a supply of compressed air is coupled to the inlet manifold.4. The method of further comprising wherein two inlet jets feed air to one outlet jet to transfer heat away from the heater surface to the cooling fluid.5. The method of wherein the cooling solution comprises a portion of a TCB tool claim 1 , and wherein a heat transfer coefficient of the cooling solution is above about 3000 W/m2K cooling rate of the die.6. The method of further comprising wherein a TEC is disposed between the heater surface and a cooling block of the cooling solution.7. The method of further comprising wherein the micro channel jets ...

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Номер записи: 4
13-02-2020 дата публикации

Thermal assemblies for multi-chip packages

Номер: US20200051894A1
Автор: Betsegaw Kebede Gebrehiwot, Chandra Mohan JHA, Chia-Pin Chiu, Je-Young Chang, Shankar Devasenathipathy, Zhimin Wan
Принадлежит: Intel Corp

Disclosed herein are thermal assemblies for multi-chip packages (MCPs), as well as related methods and devices. For example, in some embodiments, a thermal assembly for an MCP may include a heat pipe having a ring shape.

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Номер записи: 5
28-02-2019 дата публикации

Apparatus for inspection of a package assembly with a thermal solution

Номер: US20190067135A1
Автор: Aastha Uppal, Je-Young Chang, Joseph B. PETRINI, Shankar Devasenathipathy
Принадлежит: Intel Corp

Embodiments of the present disclosure provide techniques and configurations for inspection of a package assembly with a thermal solution, in accordance with some embodiments. In embodiments, an apparatus for inspection of a package assembly with a thermal solution may include a first fixture to house the package assembly on the apparatus, and a second fixture to house at least a portion of a thermal solution that is to be disposed on top of the package assembly. The apparatus may further include a load actuator, to apply a load to a die of the package assembly, via the thermal solution, and a plurality of sensors disposed around the thermal solution and the package assembly, to perform in situ thermal and/or mechanical measurements associated with the application of the load to the die of the package assembly. Other embodiments may be described and/or claimed.

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Номер записи: 6
27-02-2020 дата публикации

Die back side structures for warpage control

Номер: US20200066655A1
Автор: Chandra M. Jha, Feras Eid, Je-Young Chang, Kyle Yazzie, Pramod Malatkar, Prasanna Raghavan, Shankar Devasenathipathy, Venkata Suresh R. GUTHIKONDA
Принадлежит: Intel Corp

A foundation layer having a stiffener and methods of forming a stiffener are described. One or more dies are formed over the foundation layer. Each die has a front side surface that is electrically coupled to the foundation layer and a back side surface that is opposite from the front side surface. A stiffening layer (or a stiffener) is formed on the back side surface of at least one of the dies. The stiffening layer may be directly coupled to the back side surface of the one or more dies without an adhesive layer. The stiffening layer may include one or more materials, including at least one of a metal, a metal alloy, and a ceramic. The stiffening layer may be formed to reduce warpage based on the foundation layer and the dies. The one or more materials of the stiffening layer can be formed using a cold spray.

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Номер записи: 7
08-04-2021 дата публикации

Liquid metal thermal interface material application

Номер: US20210101175A1
Автор: Aaron MCCANN, James Christopher Matayabas, Jr., Jerrod Peterson, Joseph Blaine Petrini, Kyle Jordan Arrington, Mostafa Aghazadeh, Shankar Devasenathipathy
Принадлежит: Individual

To address technical problems facing silicon transient thermal management, a thermal interface material (TIM) may be used to provide improved thermal conduction. The TIM may include a liquid metal (LM) TIM, which may provide a significant reduction in thermal resistance, such as a thermal resistance R TIM ≈0.01-0.025 ° C.-cm2/W. The LM TIM may be applied using a presoaked applicator, such as an open-cell polyurethane foam applicator that has been presoaked in a controlled amount of LM TIM. This LM presoaked applicator is then used to apply the LM TIM to one or more target thermal surfaces, thereby providing thermal and mechanical coupling between the LM TIM and the thermal surface. The resulting thermal surface and thermally conductive LM TIM may be used to improve thermal conduction for various silicon-based devices, including various high-power, high-performance system-on-chip (SoC) packages, such as may be used in portable consumer products.

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Номер записи: 8
26-03-2020 дата публикации

SLOPED METAL FEATURES FOR COOLING HOTSPOTS IN STACKED-DIE PACKAGES

Номер: US20200098666A1
Автор: Chiu Chia-Pin, Devasenathipathy Shankar, JHA Chandra Mohan, KOTHARI Shrenik, Tadayon Pooya, Tang Weihua, Walczyk Joe F., WAN ZHIMIN
Принадлежит: Intel Corporation

Heat dissipation techniques include using metal features having one or more slanted or otherwise laterally-extending aspects. The metal features include, for example, tilted metal pillars, or metal bodies or fillets having an angled or sloping sidewall, or other metal features that extend both vertically and laterally. Such metal features increase the effective heat transfer area significantly by spreading heat in the in-plane (lateral) direction, in addition to the vertical direction. In some embodiments, slanted trenches are formed in photoresist/mold material deposited over a lower die, using photolithography and a multi-angle lens, or by laser drilling mold material deposited over the lower die. The trenches are then filled with metal. In other embodiments, metal features are printed on the lower die, and then molding material is deposited over the printed features. In any such cases, heat is conducted from a lower die to an upper die and/or an integrated heat spreader. 1. An integrated circuit package , comprising:a first die;a second die above the first die;a mold material over the first die and at least partially adjacent to the second die;a metal feature in thermal contact with the first die and having a surface that extends both vertically and laterally from a bottom surface of the mold material to an upper or side surface of the mold material; anda heat spreader in thermal contact with the metal feature.2. The integrated circuit package of claim 1 , wherein the metal feature is a slanted metal pillar that runs through at least a portion of the mold material.3. The integrated circuit package of claim 2 , wherein the slanted metal pillar slants from the vertical axis at an angle in the range of 5 to 60 degrees.4. The integrated circuit package of claim 2 , wherein the slanted metal pillar is one of a plurality of metal pillars in the mold material.5. The integrated circuit package of claim 2 , wherein the slanted metal pillar thermally connects the first die ...

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Номер записи: 9
29-04-2021 дата публикации

FILLED LIQUID METAL THERMAL INTERFACE MATERIALS

Номер: US20210125896A1
Автор: Antoniswamy Aravindha R., Arrington Kyle J., Devasenathipathy Shankar, Lofgreen Kelly, MCCANN Aaron
Принадлежит: Intel Corporation

A thermal interface material may be formed comprising a liquid metal and a corrosion resistant filler material. The thermal interface material may be used in an integrated circuit assembly between at least one integrated circuit device and a heat dissipation device, wherein the corrosion resistant filler material changes the physical properties of the thermal interface material, which may prevent failure modes from occurring during the operation of the integrated circuit assembly and may assist in maintaining a bond line thickness between the at least one integrated circuit device and the heat dissipation device. 1. An integrated circuit assembly , comprising:at least one integrated circuit device;a heat dissipation device thermally contacting the at least one integrated circuit device; anda thermal interface material between the at least one integrated circuit device and the heat dissipation device, wherein the thermal interface material comprises a liquid metal and a corrosion resistant filler material.2. The integrated circuit assembly of claim 1 , wherein the liquid metal comprises an alloy of gallium claim 1 , indium claim 1 , and tin.3. The integrated circuit assembly of claim 2 , wherein the liquid metal comprises between about 62 and 95 percent by weight gallium claim 2 , between about 4 and 22 percent by weight indium claim 2 , and between about 1 and 16 percent by weight tin.4. The integrated circuit assembly of claim 1 , wherein the corrosion resist material comprises a polymer.5. The integrated circuit assembly of claim 1 , wherein the corrosion resist material comprises a ceramic material.6. The integrated circuit assembly of claim 1 , wherein the corrosion resist material comprises an amorphous metal.7. The integrated circuit assembly of claim 1 , wherein the corrosion resist material comprises a refractory metal.8. The integrated circuit assembly of claim 1 , further comprising a corrosion barrier layer formed between the heat dissipation device and ...

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Номер записи: 10
02-04-2020 дата публикации

INTEGRATED HEAT SPREADER WITH MULTIPLE CHANNELS FOR MULTICHIP PACKAGES

Номер: US20200105643A1
Автор: Chiu Chia-Pin, Devasenathipathy Shankar, MOHAN JHA CHANDRA, Tang Weihua, WAN ZHIMIN
Принадлежит: Intel Corporation

An integrated heat spreader includes channel structures assembled in a frame. Each channel structure is independent of the other, and can be used to dissipate heat from integrated circuitry at a specific location within a package, and without allowing heat from that particular location to propagate to integrated circuitry at other locations within the package. Each channel structure can be implemented with metal having a high thermal conductivity (e.g., copper). The channel structures can be used in conjunction with liquid-based cooling or air-based cooling. The frame can be implemented with low thermal conductivity molding compound or plastic so the heat transfer from one channel structure to another is inhibited. The channel structures can have different configurations (e.g., straight, pillars, and/or pin fins) to provide different rates of flow, mixing, and/or cooling. The flow direction of air or liquid for the channel structures can be the same (parallel) or different (counter). 1. An integrated circuit package , comprising:a first die area on a substrate, the first die area including a first die;a second die area on the substrate and laterally adjacent to the first die area, the second die area including a second die;a first channel structure over the first die area and in thermal contact with the first die, the first channel structure having a thermal conductivity of greater than 200 Watts per meter-Kelvin (W/m-K), the first channel structure defining one or more channels through which coolant can flow;a second channel structure over the second die area and in thermal contact with the second die, the second channel structure having a thermal conductivity of greater than 200 W/m-K, the second channel structure defining one or more channels through which coolant can flow; anda thermally insulative material separating the first and second channel structures.2. The integrated circuit package of claim 1 , wherein the first and second channel structures include ...

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Номер записи: 11
09-04-2020 дата публикации

Dual side die packaging for enhanced heat dissipation

Номер: US20200111720A1
Автор: Chandra Mohan JHA, Chia-Pin Chiu, Shankar Devasenathipathy, Weihua Tang, Zhimin Wan
Принадлежит: Intel Corp

An Integrated Circuit (IC) device structure is provided. The IC device structure includes a first substrate, first one or more dies coupled to a first side of the first substrate by a first plurality of interconnect structures, second one or more dies coupled to a first section of a second side of the substrate by a second plurality of interconnect structures, and a third plurality of interconnect structures to couple a second section of the second side of the substrate to a second substrate. In an example, at least a part of the second one or more dies are within a cavity in the second substrate.

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Номер записи: 12
24-05-2018 дата публикации

Torque controlled driver apparatus and method

Номер: US20180141173A1
Автор: Alfredo G. Cardona, Betsegaw K. Gebrehiwot, Joseph B. PETRINI, Nicholas S. HAEHN, Robert L. Sankman, Shankar Devasenathipathy
Принадлежит: Intel Corp

Embodiments herein relate to torque controlled drivers to simultaneously drive fasteners to secure a thermal transfer device to an integrated circuit package. In various embodiments, a torque controlled driver may include a gearbox, a driver with a torque controller and a motor with a rotating shank, a motor gear coupled concentrically with the rotating shank, a bit drive gear in rotational engagement with the motor gear to drive a bit sized to drive a fastener to secure a thermal transfer device to an integrated circuit package, where the gearbox is to hold the motor gear in a position about a motor gear rotational axis and the drive gear about a drive gear rotational axis such that the motor gear and the bit drive gear maintain rotational engagement as the motor gear rotates. Other embodiments may be described and/or claimed.

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Номер записи: 13
18-06-2015 дата публикации

Thermal compression bonding process cooling manifold

Номер: US20150173209A1
Автор: Amram Eitan, George Kostiew, Hemanth Dhavaleswarapu, Joseph Petrini, Shankar Devasenathipathy, Steven B. Roach, Zhihua Li
Принадлежит: Intel Corp

Embodiments of a thermal compression bonding (TCB) process cooling manifold, a TCB process system, and a method for TCB using the cooling manifold are disclosed. In some embodiments, the cooling manifold comprises a pre-mixing chamber that is separated from a mixing chamber by a baffle. The baffle may comprise at least one concentric pattern formed through the baffle such that the primary cooling fluid in the pre-mixing chamber is substantially evenly distributed to the mixing chamber. The pre-mixing chamber may be coupled to a source of primary cooling fluid. The mixing chamber may have an input configured to accept the primary cooling fluid and an output to output the primary cooling fluid.

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Номер записи: 14
24-06-2021 дата публикации

STIM/LIQUID METAL FILLED LASER DRILL TRENCH TO IMPROVE COOLING OF STACKED BOTTOM DIE

Номер: US20210193548A1
Автор: Chiu Chia-Pin, Devasenathipathy Shankar, Li Peng, WAN ZHIMIN
Принадлежит:

Embodiments include semiconductor packages and a method to form such packages. A semiconductor package includes first and second bottom dies on a package substrate. The semiconductor package includes first top dies on the first bottom die, second top dies on the second bottom die, and a pedestal on the first and second bottom dies. The pedestal comprises a high thermal conductive material and is positioned on a region of top surfaces of the first and second bottom dies. The semiconductor package includes an encapsulation layer over the first and second bottom dies, and surrounds the first and second top dies and the pedestal. The semiconductor package includes a TIM over the first and second top dies, pedestal, and encapsulation layer, and an integrated heat spreader (IHS) over the TIM. The pedestal is on a periphery region of the top surfaces of the first and second bottom dies. 1. A semiconductor package , comprising:a first bottom die and a second bottom die on a package substrate, wherein the first bottom die is adjacent to the second bottom die;a plurality of first top dies on the first bottom die, and a plurality of second top dies on the second bottom die;a pedestal on a region of a top surface of the first bottom die and a top surface of the second bottom die, wherein the pedestal is comprised of a high thermal conductive material; anda thermal interface material (TIM) on the plurality of first top dies, the plurality of second top dies, and the pedestal.2. The semiconductor package of claim 1 , wherein the pedestal is on a periphery region of the top surface of the first bottom die and the top surface of the second bottom die.3. The semiconductor package of claim 1 , wherein the high thermal conductive material of the pedestal is comprised of a solder TIM (STIM) claim 1 , an indium STIM claim 1 , a metallic TIM claim 1 , or a polymer TIM (PTIM) claim 1 , wherein the TIM is comprised of a first high thermal conductive material claim 1 , and wherein a portion ...

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Номер записи: 15
04-06-2020 дата публикации

Die backside structures for enhancing liquid cooling of high power multi-chip package (mcp) dice

Номер: US20200176352A1
Автор: Chandra M. Jha, Feras Eid, Je-Young Chang, John C. Johnson, Shankar Devasenathipathy
Принадлежит: Intel Corp

An integrated circuit die includes a device side and a backside opposite the device side, wherein the backside includes a heat transfer enhancement configuration formed therein or a heat transfer enhancement structure formed thereon each of which enhance a heat transfer area or a boiling nucleation site density over a planar backside surface. A method of forming an integrated circuit assembly includes disposing a heat exchanger on a multi-chip package, the multi-chip package including at least one integrated circuit die including a device side and an opposite backside includes a heat transfer enhancement configuration formed therein or a heat enhancement structure formed thereon; and contacting the backside of the at least one integrated circuit die with water or other cooling fluids, such as a mixture of water and antifreeze, alcohol, inert fluorinated hydrocarbon, helium, and/or other suitable cooling fluid (either liquid or gas).

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Номер записи: 16
21-07-2016 дата публикации

Thermal compression bonding process cooling manifold

Номер: US20160211238A1
Автор: Amram Eitan, George S. KOSTIEW, Hemanth Dhavaleswarapu, Joseph Petrini, Shankar Devasenathipathy, Steven B. Roach, Zhihua Li
Принадлежит: Intel Corp

Embodiments of a thermal compression bonding (TCB) process cooling manifold, a TCB process system, and a method for TCB using the cooling manifold are disclosed. In some embodiments, the cooling manifold comprises a pre-mixing chamber that is separated from a mixing chamber by a baffle. The baffle may comprise at least one concentric pattern formed through the baffle such that the primary cooling fluid in the pre-mixing chamber is substantially evenly distributed to the mixing chamber. The pre-mixing chamber may be coupled to a source of primary cooling fluid. The mixing chamber may have an input configured to accept the primary cooling fluid and an output to output the primary cooling fluid.

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Номер записи: 17
25-06-2020 дата публикации

Dual strip backside metallization for improved alt-fli plating, koz minimization, test enhancement and warpage control

Номер: US20200203240A1
Автор: Edvin Cetegen, Nicholas S. HAEHN, Shankar Devasenathipathy
Принадлежит: Intel Corp

An integrated circuit assembly including a substrate having a surface including at least one area including contact points operable for connection with an integrated circuit die; and at least one ring surrounding the at least one area, the at least one ring including an electrically conductive material. A method of forming an integrated circuit assembly including forming a plurality of electrically conductive rings around a periphery of a die area of a substrate selected for attachment of at least one integrated circuit die, wherein the plurality of rings are formed one inside the other; and forming a plurality of contact points in the die area.

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Номер записи: 18
05-08-2021 дата публикации

PRINTED HEAT SPREADER STRUCTURES AND METHODS OF PROVIDING SAME

Номер: US20210242105A1
Автор: Antoniswamy Aravindha, ARRINGTON Kyle, Devasenathipathy Shankar, Malatkar Pramod, Reyes Schuldes Jesus Gerardo
Принадлежит: Intel Corporation

Techniques and mechanisms for promoting heat conduction in a packaged device using a heat spreader that is fabricated by a build-up process. In an embodiment, 3D printing of a heat spreader successively deposit layers of a thermal conductor material, where said layers variously extend each over a respective one or more IC dies. The heat spreader forms a flat top side, wherein a bottom side of the heat spreader extends over, and conforms at least partially to, different respective heights of various IC dies. In another embodiment, fabrication of a portion of the heat spreader comprises printing pore structures that contribute to a relatively low thermal conductivity of said portion. An average orientation of the oblong pores contributes to different respective thermal conduction properties for various directions of heat flow. 1. A device assembly , comprising:a substrate;an integrated circuit (IC) die over a surface of the substrate; and a first material layer which extends over the IC die; and', 'a second material layer in direct contact with the first material layer, wherein the first material layer and the second material layer have substantially a same composition., 'a heat spreader structure comprising a stack of material layers including2. The device assembly of claim 1 , wherein the first material layer and the second material layer each comprise predominantly copper or an alloy thereof claim 1 , or predominantly aluminum or an alloy thereof.3. The device assembly of claim 1 , wherein one or more pores are formed in the heat spreader structure.4. The device assembly of claim 3 , wherein the one or more pores are each defined by at least a respective two material layers of the stack.5. The device assembly of claim 3 , wherein a first pore is defined at least in part by a first material of the heat spreader structure claim 3 , and wherein a second material other than the first material is within the first pore.6. The device assembly of claim 3 , wherein the heat ...

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Номер записи: 19
11-07-2019 дата публикации

STACKED DIE ARCHITECTURES WITH IMPROVED THERMAL MANAGEMENT

Номер: US20190214328A1
Автор: Baker Michael J., Devasenathipathy Shankar, EID Feras, GAINES Taylor, Gebrehiwot Betsegaw K., JHA Chandra M., KOTHARI Shrenik, Liff Shawna M., Raorane Digvijay Ashokkumar, SOUNART Thomas L., Swan Johanna M.
Принадлежит:

A semiconductor device that has a semiconductor die coupled to a substrate. A mold compound encapsulates the semiconductor die, and at least one thermal conductive material section extends from adjacent the semiconductor die through the mold compound. The at least one conductive material section thus conveys heat from the semiconductor die through the mold compound. 1. A semiconductor device comprising:a semiconductor die coupled to a substrate;a mold compound encapsulating the semiconductor die;at least one thermal conductive material section extending from adjacent the semiconductor die through the mold compound to convey heat from the semiconductor die through the mold compound.2. The semiconductor device of claim 1 , wherein a thermal conductivity of the at least one thermal conductive material section is greater than a thermal conductivity of the mold compound.3. The semiconductor device of claim 1 , further comprising:a heat spreader interfacing with the thermal conductive material section to receive heat conveyed through the thermal conductive material section.4. The semiconductor device of claim 1 , wherein the semiconductor die is within a stacked semiconductor die set.5. The semiconductor device of claim 4 , wherein the stacked semiconductor die set includes a bottom semiconductor die coupled to the substrate and a top semiconductor die coupled to the bottom semiconductor die.6. The semiconductor device of claim 5 , wherein the at least one thermal conductive material section interfaces with the bottom semiconductor die and the top semiconductor die and extends to a heat spreader coupled to the substrate.7. The semiconductor device of claim 4 , wherein the stacked semiconductor die set includes an intermediary semiconductor die coupled to the bottom semiconductor die and a top semiconductor die coupled to the intermediary semiconductor die.8. The semiconductor device of claim 7 , wherein the at least one thermal conductive material section includes a first ...

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Номер записи: 20
19-08-2021 дата публикации

ENHANCED BASE DIE HEAT PATH USING THROUGH-SILICON VIAS

Номер: US20210257277A1
Автор: ARRINGTON Kyle, BERTRAND Weston, Devasenathipathy Shankar, MCCANN Aaron, Neal Nicholas, WAN ZHIMIN
Принадлежит:

Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy. 1. A package comprising:a first die with a first side and a second side opposite the first side;a second die with a first side and a second side opposite the first side, wherein the first side of the first die is coupled with the second side of the second die;a thermal block with a first side and a second side opposite the first side, wherein the second side of the thermal block is thermally coupled with the first side of the first die; andwherein the thermal block is to thermally couple the first side of the first die to the first side of the thermal block.2. The package of claim 1 , wherein the thermal block includes one or more thermal conductivity features extending from the first side of the thermal block to the second side of the thermal block to thermally couple the first side of the thermal block with the second side of the thermal block.3. The package of claim 2 , wherein the one of the one or more thermal conductivity features include a selected one of copper claim 2 , solder claim 2 , tin claim 2 , silver claim 2 , or gold.4. The package of claim 2 , wherein the one or more thermal conductivity features at the second side of the thermal block are aligned claim 2 , respectively claim 2 , with one or more heat sources in the first die.5. The package of claim 2 , wherein the one or more ...

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Номер записи: 21
30-07-2020 дата публикации

COOLING SOLUTION INCLUDING MICROCHANNEL ARRAYS AND METHODS OF FORMING THE SAME

Номер: US20200243418A1
Автор: Chang Je-Young, Devasenathipathy Shankar, Neal Nicholas, WAN ZHIMIN
Принадлежит: Intel Corporation

Embodiments include a cooling solution having a first array of fins, where the first array of fins extend vertically from the substrate, and where adjacent individual fins of the first array are separated from each other by a microchannel. A second array of fins extend vertically from the substrate, where a channel region is between the first array of fins and the second array of fins. 1. A microelectronic cooling solution comprising:a substrate;a first array of fins, wherein the first array of fins extends vertically from the substrate, and wherein adjacent individual fins of the first array are separated from each other by a microchannel; anda second array of fins extending vertically from the substrate, wherein a channel region is between the first array of fins and the second array of fins.2. The microelectronic cooling solution of claim 1 , further comprising a third array of fins extending from the substrate adjacent the second array of fins claim 1 , wherein the channel region comprises a first channel region claim 1 , and wherein the second array of fins and the third array of fins are separated from each other by a second channel region.3. The microelectronic cooling solution of claim 1 , wherein a width of the microchannel is below about 100 microns claim 1 , and wherein a length of individual fins of the second array of fins is greater than about twice a length of individual fins of the first array of fins.4. The microelectronic cooling solution of claim 3 , wherein the cooling solution further comprises a cover claim 3 , wherein the cover is on a top portion of the cooling solution claim 3 , wherein an inlet port is on the cover claim 3 , and is adjacent to the first array of fins claim 3 , and wherein an outlet port is adjacent to the second array of fins.5. The microelectronic cooling solution of claim 1 , wherein a width of the channel region is substantially equal to a width of the microchannel.6. The microelectronic cooling solution of claim 1 , ...

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Номер записи: 22
24-09-2020 дата публикации

INTEGRATED CIRCUIT PACKAGE SOCKET HOUSING TO ENHANCE PACKAGE COOLING

Номер: US20200303852A1
Автор: Chiu Chia-Pin, Devasenathipathy Shankar, KLEIN Steven A., WAN ZHIMIN
Принадлежит: Intel Corporation

An integrated circuit (IC) socket comprising a housing with a land side, an opposing die side, and sidewalls around a perimeter of the housing. The housing comprises a first dielectric. A plurality of socket pins extends from the land side of the housing through socket pin holes in the housing over the die side of the housing. A second dielectric is within the interstitial regions between the socket pins and sidewalls of the socket pin holes. A frame structure extends around at least a portion of the perimeter of the housing, and a mesh structure is embedded within the first dielectric. The mesh structure has plurality of mesh filaments extending between the plurality of socket pin holes and coupled to the frame structure. 1. An integrated circuit (IC) socket , comprising:a housing comprising a land side and an opposing die side and sidewalls around a perimeter of the housing, the housing comprising a first dielectric;a plurality of socket pins extending from the land side of the housing through socket pin holes in the housing to at least a z-height over the die side;a frame structure extending around at least a portion of the perimeter of the housing; anda mesh structure embedded within the first dielectric, the mesh structure having a plurality of mesh filaments extending between the plurality of socket pin holes and coupled to the frame structure.2. The IC socket of claim 1 , further comprising a second dielectric having a thermal conductivity of at least 1 W/mK claim 1 , the second dielectric within the interstitial regions between the socket pins and sidewalls of the socket pin holes.3. The IC socket of claim 1 , wherein the first dielectric has a thermal conductivity of at least 140 W/mK.4. The IC socket of claim 1 , wherein the plurality of mesh filaments comprises a first plurality of mesh filaments and a second plurality of mesh filaments claim 1 , wherein the first plurality and second plurality of mesh filaments extend between the sidewalls of the housing ...

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Номер записи: 23
01-10-2020 дата публикации

THERMOELECTRIC COOLER TO ENHANCE THERMAL-MECHANICAL PACKAGE PERFORMANCE

Номер: US20200312741A1
Автор: Devasenathipathy Shankar, JHA Chandra Mohan, Valavala Krishna Vasanth, WAN ZHIMIN
Принадлежит: Intel Corporation

An IC package comprising a substrate comprising a dielectric, an IC device coupled to the substrate; and a thermoelectric cooling (TEC) device adjacent to the IC device and coupled to the substrate. A thermal trace extends laterally on or within the dielectric between the TEC device to the IC device, and the thermal trace is coupled to the TEC device and the IC device. 1. An Integrated Circuit (IC) package , comprising:a substrate comprising a dielectric;an IC device coupled to the substrate; anda thermoelectric cooling (TEC) device adjacent to the IC device and coupled to the substrate,wherein a thermal trace extends laterally on or within the dielectric between the TEC device to the IC device, and wherein the thermal trace is coupled to the TEC device and the IC device.2. The IC package of claim 1 , wherein the thermal trace comprises any one of copper claim 1 , silver claim 1 , gold claim 1 , nickel claim 1 , aluminum claim 1 , silicon claim 1 , or aluminum nitride.3. The IC package of claim 1 , wherein the thermal trace has a depth dimension orthogonal to a width dimension claim 1 , wherein the depth dimension is at least one half of the width dimension.4. The IC package of claim 1 , wherein the TEC device comprises a first surface and an opposing second surface claim 1 , wherein the second surface is adjacent to the substrate claim 1 , wherein a first metal layer is over the first surface and a second metal layer is over the second surface claim 1 , the first metal layer is adjacent to a thermal solution over the TEC device.5. The IC package of claim 4 , wherein a thermal interface material is between the first surface of the TEC and the thermal solution.6. The IC package of claim 5 , wherein the thermal solution is a heat sink or an integrated heat spreader and a heat sink claim 5 , wherein the heat sink is over the integrated heat spreader and thermally coupled thereto.7. The IC package of claim 1 , wherein the TEC device comprises a thermoelectric material ...

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Номер записи: 24
31-12-2020 дата публикации

DEVICE, SYSTEM AND METHOD FOR PROVIDING MICROCHANNELS WITH POROUS SIDEWALL STRUCTURES

Номер: US20200409398A1
Автор: Devasenathipathy Shankar, GEBREHIWOT Betsegaw, Prajapati Hardikkumar, WAN ZHIMIN
Принадлежит: Intel Corporation

Techniques and mechanisms for enabling a flow of fluid through microchannels of a fluid conduit, which is thermally coupled to cool integrated circuitry. In an embodiment, sidewall structures of the fluid conduit extend from a base structure to form at least in part microchannels, which extend along the base structure. The sidewall structures accommodate a flow of a coolant fluid through the fluid conduit, where the flow in turn facilitates conduction of heat, which has been transferred to the fluid conduit from the integrated circuitry. The sidewall structures comprise pores, which extend through a corresponding sidewall structure between two microchannel regions. In another embodiment, a sidewall structure provides a gradient of average porosity along one or more dimensions. 1. A fluid conduit for cooling an integrated circuit (IC) die , comprising:a base to conduct heat from the IC die; anda plurality of microchannels over the base, the plurality of microchannels comprising first ends coupled to an inlet of the fluid conduit, and second ends coupled to an outlet of the fluid conduit, the plurality of microchannels to convey a fluid in parallel over the base, wherein the plurality of microchannels comprises a first microchannel and a second microchannel in fluid communication with each other through one or more pores of a sidewall structure therebetween.2. The fluid conduit of claim 1 , wherein the sidewall structure spans a longitudinal length over the base between respective ends of the first microchannel and the second microchannel claim 1 , and the sidewall structure comprises a plurality of pores over at least half the longitudinal length.3. The fluid conduit of claim 1 , wherein for each of the one or more pores of the sidewall structure claim 1 , a cross sectional area of the pore is less than a cross sectional area of one of the first microchannel or the second microchannel.4. The fluid conduit of claim 1 , wherein the first microchannel and the second ...

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Номер записи: 25
31-12-2020 дата публикации

SOCKET LOADING MECHANISM FOR PASSIVE OR ACTIVE SOCKET AND PACKAGE COOLING

Номер: US20200411410A1
Автор: Chiu Chia-Pin, Devasenathipathy Shankar, KLEIN Steven A., WAN ZHIMIN
Принадлежит: Intel Corporation

A microprocessor mounting apparatus comprising a microprocessor socket on a printed circuit board (PCB) and a bolster plate surrounding a perimeter of the microprocessor socket. The bolster plate has a first surface adjacent to the PCB, and a second surface opposite the first surface. A heat dissipation device is on the second surface of the bolster plate. The heat dissipation interface is thermally coupled to the microprocessor socket. 1. A microprocessor mounting apparatus , comprising:a microprocessor socket on a printed circuit board (PCB);a bolster plate surrounding a perimeter of the microprocessor socket, wherein the bolster plate has a first surface adjacent to the PCB, and a second surface opposite the first surface; anda heat dissipation device on the second surface of the bolster plate, wherein the heat dissipation interface is thermally coupled to the microprocessor socket.2. The microprocessor mounting apparatus of claim 1 , wherein a thermal interface material is between the bolster plate and the microprocessor socket claim 1 , and wherein the microprocessor socket is thermally coupled to the bolster plate by the thermal interface material.3. The microprocessor mounting apparatus of claim 2 , wherein the thermal interface material is a thermal grease claim 2 , a thermal paste claim 2 , a thermal gel or a thermal pad.4. The microprocessor mounting apparatus of claim 1 , wherein the heat dissipation device comprises a plurality of heat-dissipation fins over the second surface of the bolster plate.5. The microprocessor mounting apparatus of claim 1 , wherein the heat dissipation device is a vapor chamber joined to the second surface of the bolster plate claim 1 , and to a heat sink.6. The microprocessor mounting apparatus of claim 5 , wherein the vapor chamber is joined to the bolster plate by a braze bond claim 5 , a diffusion bond or an adhesive bond.7. The microprocessor mounting apparatus of claim 5 , wherein the vapor chamber comprises a plurality of ...

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Номер записи: 26
26-07-2022 дата публикации

Sloped metal features for cooling hotspots in stacked-die packages

Номер: US11398414B2
Автор: Chandra Mohan JHA, Chia-Pin Chiu, Joe F. Walczyk, Pooya Tadayon, Shankar Devasenathipathy, Shrenik Kothari, Weihua Tang, Zhimin Wan
Принадлежит: Intel Corp

Heat dissipation techniques include using metal features having one or more slanted or otherwise laterally-extending aspects. The metal features include, for example, tilted metal pillars, or metal bodies or fillets having an angled or sloping sidewall, or other metal features that extend both vertically and laterally. Such metal features increase the effective heat transfer area significantly by spreading heat in the in-plane (lateral) direction, in addition to the vertical direction. In some embodiments, slanted trenches are formed in photoresist/mold material deposited over a lower die, using photolithography and a multi-angle lens, or by laser drilling mold material deposited over the lower die. The trenches are then filled with metal. In other embodiments, metal features are printed on the lower die, and then molding material is deposited over the printed features. In any such cases, heat is conducted from a lower die to an upper die and/or an integrated heat spreader.

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Номер записи: 27
27-06-2013 дата публикации

High performance transient uniform cooling solution for thermal compression bonding process

Номер: WO2013095362A1
Автор: George S. KOSTIEW, Hemanth K. DHAVALESWARAPU, Ioan Sauciuc, Joseph B. PETRINI, Pranav K. DESAI, Sanjoy K. Saha, Shankar Devasenathipathy, Steven B. Roach, Zhihua Li
Принадлежит: Intel Corporation

Various embodiments of thermal compression bonding transient cooling solutions are described. Those embodiments include a an array of vertically separated micro channels coupled to a heater surface, wherein every outlet micro channel comprises two adjacent inlet micro channel, and wherein an inlet and outlet manifold are coupled to the array of micro channels, and wherein the heater surface and the micro channels are coupled within the same block.

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Номер записи: 28
27-04-2023 дата публикации

Enhanced base die heat path using through-silicon vias

Номер: US20230128903A1
Автор: Aaron MCCANN, Kyle Arrington, Nicholas Neal, Shankar Devasenathipathy, Weston Bertrand, Zhimin Wan
Принадлежит: Intel Corp

Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

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Номер записи: 29
09-05-2023 дата публикации

Socket loading mechanism for passive or active socket and package cooling

Номер: US11646244B2
Автор: Chia-Pin Chiu, Shankar Devasenathipathy, Steven A. Klein, Zhimin Wan
Принадлежит: Intel Corp

A microprocessor mounting apparatus comprising a microprocessor socket on a printed circuit board (PCB) and a bolster plate surrounding a perimeter of the microprocessor socket. The bolster plate has a first surface adjacent to the PCB, and a second surface opposite the first surface. A heat dissipation device is on the second surface of the bolster plate. The heat dissipation interface is thermally coupled to the microprocessor socket.

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Номер записи: 30
05-03-2024 дата публикации

Printed heat spreader structures and methods of providing same

Номер: US11923268B2
Автор: Aravindha Antoniswamy, Jesus Gerardo Reyes Schuldes, Kyle Arrington, Pramod Malatkar, Shankar Devasenathipathy
Принадлежит: Intel Corp

Techniques and mechanisms for promoting heat conduction in a packaged device using a heat spreader that is fabricated by a build-up process. In an embodiment, 3D printing of a heat spreader successively deposit layers of a thermal conductor material, where said layers variously extend each over a respective one or more IC dies. The heat spreader forms a flat top side, wherein a bottom side of the heat spreader extends over, and conforms at least partially to, different respective heights of various IC dies. In another embodiment, fabrication of a portion of the heat spreader comprises printing pore structures that contribute to a relatively low thermal conductivity of said portion. An average orientation of the oblong pores contributes to different respective thermal conduction properties for various directions of heat flow.

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Номер записи: 31
02-12-2021 дата публикации

Stacked die architectures with improved thermal management

Номер: US20210375719A1
Автор: Betsegaw K. Gebrehiwot, Chandra M. Jha, Digvijay Ashokkumar Raorane, Feras Eid, Johanna M. Swan, Michael J. Baker, Shankar Devasenathipathy, Shawna M. LIFF, Shrenik Kothari, Taylor GAINES, Thomas L. SOUNART
Принадлежит: Intel Corp

A semiconductor device that has a semiconductor die coupled to a substrate. A mold compound encapsulates the semiconductor die, and at least one thermal conductive material section extends from adjacent the semiconductor die through the mold compound. The at least one conductive material section thus conveys heat from the semiconductor die through the mold compound.

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Номер записи: 32
26-12-2023 дата публикации

STIM/liquid metal filled laser drill trench to improve cooling of stacked bottom die

Номер: US11854931B2
Автор: Chia-Pin Chiu, Peng Li, Shankar Devasenathipathy, Zhimin Wan
Принадлежит: Intel Corp

Embodiments include semiconductor packages and a method to form such packages. A semiconductor package includes first and second bottom dies on a package substrate. The semiconductor package includes first top dies on the first bottom die, second top dies on the second bottom die, and a pedestal on the first and second bottom dies. The pedestal comprises a high thermal conductive material and is positioned on a region of top surfaces of the first and second bottom dies. The semiconductor package includes an encapsulation layer over the first and second bottom dies, and surrounds the first and second top dies and the pedestal. The semiconductor package includes a TIM over the first and second top dies, pedestal, and encapsulation layer, and an integrated heat spreader (IHS) over the TIM. The pedestal is on a periphery region of the top surfaces of the first and second bottom dies.

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Номер записи: 33
26-12-2023 дата публикации

Enhanced base die heat path using through-silicon vias

Номер: US11854935B2
Автор: Aaron MCCANN, Kyle Arrington, Nicholas Neal, Shankar Devasenathipathy, Weston Bertrand, Zhimin Wan
Принадлежит: Intel Corp

Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

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Номер записи: 34
24-03-2020 дата публикации

Apparatus for inspection of a package assembly with a thermal solution

Номер: US10600699B2
Автор: Aastha Uppal, Je-Young Chang, Joseph B. PETRINI, Shankar Devasenathipathy
Принадлежит: Intel Corp

Embodiments of the present disclosure provide techniques and configurations for inspection of a package assembly with a thermal solution, in accordance with some embodiments. In embodiments, an apparatus for inspection of a package assembly with a thermal solution may include a first fixture to house the package assembly on the apparatus, and a second fixture to house at least a portion of a thermal solution that is to be disposed on top of the package assembly. The apparatus may further include a load actuator, to apply a load to a die of the package assembly, via the thermal solution, and a plurality of sensors disposed around the thermal solution and the package assembly, to perform in situ thermal and/or mechanical measurements associated with the application of the load to the die of the package assembly. Other embodiments may be described and/or claimed.

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Номер записи: 35
13-02-2024 дата публикации

Cooling solution including microchannel arrays and methods of forming the same

Номер: US11901262B2
Автор: Je-Young Chang, Nicholas Neal, Shankar Devasenathipathy, Zhimin Wan
Принадлежит: Intel Corp

Embodiments include a cooling solution having a first array of fins, where the first array of fins extend vertically from the substrate, and where adjacent individual fins of the first array are separated from each other by a microchannel. A second array of fins extend vertically from the substrate, where a channel region is between the first array of fins and the second array of fins.

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Номер записи: 36
14-09-2023 дата публикации

Vapor chamber integrated heat spreader (ihs) with liquid reservoir

Номер: US20230290706A1
Автор: Gaurav Patankar, Krishna Vasanth VALAVALA, Shankar Devasenathipathy
Принадлежит: Intel Corp

A surplus liquid reservoir attached to a vapor chamber integrated heat spreader (IHS) and placed near a heat source on a heterogenous die. The vapor chamber integrated heat spreader (IHS) includes a main heat transfer portion that encloses a vapor channel, a first wick material, and a first working fluid. The surplus liquid reservoir is provided by a reservoir leg mechanically coupled, on a first side, to the main heat transfer portion, the reservoir leg has a reservoir portion with a second working fluid and second wick material that is in contact with the first wick material. The surplus liquid reservoir can either support a PL2 that is higher than a given vapor chamber Qmax for a significantly long time or increase the PL2 value to a significantly higher value.

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Номер записи: 37
19-08-2021 дата публикации

Verbesserter basis-die-wärmepfad unter verwendung von siliciumdurchkontaktierungen

Номер: DE102020131263A1
Автор: Aaron MCCANN, Kyle Arrington, Nicholas Neal, Shankar Devasenathipathy, Weston Bertrand, Zhimin Wan
Принадлежит: Intel Corp

Ausführungsformen der vorliegenden Offenbarung können allgemein Systeme, Einrichtungen, Techniken und/oder Prozesse betreffen, die auf Gehäuse ausgerichtet sind, die gestapelte Dies beinhalten, die Wärmeleitfähigkeitsmerkmale verwenden, einschließlich mit einem wärmeleitfähigen Material gefüllter wärmeleitfähiger Siliciumdurchkontaktierungen (TSVs), die sich in passiven Bereichen eines ersten Die befinden, um Wärme von einem ersten Die von einem zweiten Die weg zu führen, der mit dem ersten Die gekoppelt ist. Bei Ausführungsformen kann der erste Die als ein Basis-Die bezeichnet werden. Ausführungsformen können thermische Blöcke in der Form von Dummy-Dies beinhalten, die TSVs beinhalten, die wenigstens teilweise mit einem wärmeenergieleitenden Material, wie etwa Kupfer, Lot oder einer anderen Legierung, gefüllt sind.

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Номер записи: 38
06-08-2024 дата публикации

Enhanced base die heat path using through-silicon vias

Номер: US12057369B2
Автор: Aaron MCCANN, Kyle Arrington, Nicholas Neal, Shankar Devasenathipathy, Weston Bertrand, Zhimin Wan
Принадлежит: Intel Corp

Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

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Номер записи: 39
22-08-2024 дата публикации

Enhanced base die heat path using through-silicon vias

Номер: US20240282667A1
Автор: Aaron MCCANN, Kyle Arrington, Nicholas Neal, Shankar Devasenathipathy, Weston Bertrand, Zhimin Wan
Принадлежит: Intel Corp

Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

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Номер записи: 40
17-04-2018 дата публикации

High performance transient uniform cooling solution for thermal compression bonding process

Номер: US09943931B2
Автор: George S. KOSTIEW, Hemanth K. DHAVALESWARAPU, Ioan Sauciuc, Joseph B. PETRINI, Pranav K. DESAI, Sanjoy K. Saha, Shankar Devasenathipathy, Steven B. Roach, Zhihua Li
Принадлежит: Intel Corp

Various embodiments of thermal compression bonding transient cooling solutions are described. Those embodiments include a an array of vertically separated micro channels coupled to a heater surface, wherein every outlet micro channel comprises two adjacent inlet micro channel, and wherein an inlet and outlet manifold are coupled to the array of micro channels, and wherein the heater surface and the micro channels are coupled within the same block.

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Номер записи: 41