PLASMA PROCESSING CHAMBER WITH GUARD RING FOR UPPER ELECTRODE ASSEMBLY

A plasma processing chamber, which includes an upper electrode assembly, a lower electrode assembly, and a plasma confinement assembly. The upper electrode assembly includes an upper electrode, a backing member, the backing member attachable to an upper surface of the upper electrode, and a guard ring surrounding an outer surface of the backing member and located above the upper surface of the upper electrode, wherein the guard ring is configured to provide an inner gap between the outer surface of the backing member and an inner periphery of the guard ring. The lower electrode assembly is adapted to receive a semiconductor substrate. The plasma confinement assembly is separated from an outer periphery of the upper electrode and the backing member by the guard ring.

PROCESSING CHAMBER WITH FEATURES FROM SIDE WALL

Provided is a processing chamber having a chamber housing with an upper end and side parts. The processing chamber has a seal part for connecting the side walls of the chamber housing to the upper end of a lower chamber below the processing chamber. A substrate holder is attached to side walls of the chamber housing. Also, each wafer lift ring supported by a side arm extended through the side walls has at least three posts having at least one filter, and the upper end of fingers determines a first wafer handoff plane. The lower chamber has at least one wafer supporting part determining a second wafer handoff plane. The height between the first wafer handoff plane and the second wafer handoff plane is less then maximum perpendicular stroke of a transfer arm formed to transfer a wafer from the first wafer handoff plane and the second wafer handoff plane. COPYRIGHT KIPO 2016 ...

Quartz guard ring centering features

An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.

METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER

Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations. Gas supply systems are also disclosed. 1. A method for verifying process gas flow rates from a gas supply system to a plasma processing chamber , the method comprising:a) setting a first flow controller to a first set point and flowing a gas at a first set flow rate from the first flow controller, the gas flowing through a first orifice of an orifice array into a plasma processing chamber [which is at ambient temperature];b) setting the first flow controller to a second set point and flowing the gas at a second set flow rate from the first flow controller, the gas flowing through the first orifice [or a second orifice of the orifice array] into the plasma processing chamber which is at ambient temperature;c) setting the first flow controller to a third set point and flowing the gas at a third set flow rate from the first flow controller, the gas flowing through the first orifice into the plasma processing chamber;d) for the first, second and third set flow rates, ...

QUARTZ GUARD RING CENTERING FEATURES

An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring. © KIPO & WIPO 2009 ...

Quartz guard ring

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode.

Gas distribution system with tuning gas

An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.

Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber

Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber

Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing ...

GAS SWITCHING SECTION INCLUDING VALVES HAVING DIFFERENT FLOW COEFFICIENTS FOR GAS DISTRIBUTION SYSTEM

A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows. © KIPO & WIPO 2009 ...

Gas switching section including valves having different flow coefficients for gas distribution system

A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows.

Gas switching section including valves having different flow coefficients for gas distribution system

A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows.

QUARTZ GUARD RING

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode. © KIPO & WIPO 2009 ...

METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER

ABSTRACT OF THE DISCLOSURE Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such ...

GAS SWITCHING SECTION INCLUDING VALVES HAVING DIFFERENT FLOW COEFFICIENTS FOR GAS DISTRIBUTION SYSTEM

A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows. 19-. (canceled)10. The method of claim 18 , wherein the first claim 18 , third claim 18 , fifth and seventh flow coefficients are substantially equal to each other claim 18 , and the second claim 18 , fourth claim 18 , sixth and eighth flow coefficients are substantially equal to each other.11. The method of claim 18 , wherein a difference between the first and second flow coefficients is substantially equal to a difference between the third and fourth flow coefficients claim 18 , the fifth and sixth flow coefficients and the seventh and eighth flow coefficients.12. The method of claim 18 , the method comprising:maintaining the inlet pressure of the first fast switching valve and the seventh fast switching valve such that the inlet pressure of the first fast switching valve is approximately equal to the inlet pressure of the seventh fast switching valve when the flow of gas to each of the first and seventh fast switching valves is approximately equal; andmaintaining the inlet pressure of the third fast switching valve and the fifth fast switching valve such that the inlet pressure of the third fast switching valve is approximately equal to the inlet pressure of the fifth fast switching valve when the flow of gas to each of the third and fifth fast switching valves is approximately equal.13. (canceled)14. The method of claim 18 , the method comprising controlling the opening and closing of the first claim 18 , second claim 18 , third and fourth fast switching valves ...

Method of polishing a metal surface of a barrier door of a gate valve used in a semiconductor cluster tool architecture

The method of preserving the anodized finish of a barrier door of a process module includes bonding a seal to a metal surface, anodizing the metal surface, and then using a CNC machine to polish the metal surface without damaging the seal. The metal surface is polished by traversing a polishing path along the metal surface with a polishing head maintaining frictional contact with the metal surface. The integrity of the seal is preserved by bounding the polishing head to skirt the edge of the seal by following the polishing path.

UNIFORM ETCH SYSTEM

Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

GAS SWITCHING SECTION INCLUDING VALVES HAVING DIFFERENT FLOW COEFFICIENT'S FOR GAS DISTRIBUTION SYSTEM

A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows. 1. A gas switching section for a gas distribution system for supplying process gas to a plasma processing chamber , the gas switching section including:a first gas passage adapted to be in fluid communication with a first gas line and the plasma processing chamber;a second gas passage adapted to be in fluid communication with the first gas line and a by-pass line;a first fast switching valve along the first gas passage operable to open and close the first gas passage, the first fast switching valve having a first flow coefficient; anda second fast switching valve along the second gas passage operable to open and close the second gas passage, the second fast switching valve having a second flow coefficient different than the first flow coefficient such that an inlet pressure of the first fast switching valve is substantially equal to an inlet pressure of the second fast switching valve when gas flow is switched from the first gas passage to the second gas passage by closing the first fast switching valve and opening the second fast switching valve, or from the second gas passage to the first gas passage by closing the second fast switching valve and opening the first fast switching valve.2. The gas switching section of claim 1 , wherein the first and second fast switching valves are adapted to be actuated (a) to open the first fast switching valve and close the second fast switching valve to supply a process gas to the plasma processing chamber claim 1 , and (b) close ...

Film adhesive for semiconductor vacuum processing apparatus

A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of >=800% at a temperature range between room temperature and 300° C. such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.

Gas switching section including valves having different flow coefficients for gas distribution system

A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows.

Quartz guard ring centering features

An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.

Film adhesive for semiconductor vacuum processing apparatus

A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of 800% at a temperature range between room temperature and 300° C. such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.

Quartz guard ring

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode.

Method of cleaning aluminum plasma chamber parts

A method of cleaning a surface of a component of a plasma chamber, wherein the component has an aluminum or anodized aluminum surface, the method including the steps of: soaking the surface of the component in a diluted sulfuric peroxide (DSP) solution; spray rinsing the surface with water following removal of the surface from the DSP solution; soaking the surface in a dilute nitric acid (HNO 3 ) solution; spray rinsing the surface with water following removal of the surface from the dilute nitric acid solution; and repeating at least twice the steps of soaking the surface in dilute nitric acid followed by spray rinsing the surface.

Gas switching section including valves having different flow coefficients for gas distribution system

A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows.

Plasma processing chamber with guard ring for upper electrode assembly

A plasma processing chamber, which includes an upper electrode assembly, a lower electrode assembly, and a plasma confinement assembly. The upper electrode assembly includes an upper electrode, a backing member, the backing member attachable to an upper surface of the upper electrode, and a guard ring surrounding an outer surface of the backing member and located above the upper surface of the upper electrode, wherein the guard ring is configured to provide an inner gap between the outer surface of the backing member and an inner periphery of the guard ring. The lower electrode assembly is adapted to receive a semiconductor substrate. The plasma confinement assembly is separated from an outer periphery of the upper electrode and the backing member by the guard ring.

Quartz guard ring centering features

An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.

Uniform etch system

Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

Quartz guard ring centering features

An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.

METHOD OF CLEANING ALUMINUM PLASMA CHAMBER PARTS

A method of cleaning a surface of a component of a plasma chamber, wherein the component has an aluminum or anodized aluminum surface, the method including the steps of: soaking the surface of the component in a diluted sulfuric peroxide (DSP) solution; spray rinsing the surface with water following removal of the surface from the DSP solution; soaking the surface in a dilute nitric acid (HNO) solution; spray rinsing the surface with water following removal of the surface from the dilute nitric acid solution; and repeating at least twice the steps of soaking the surface in dilute nitric acid followed by spray rinsing the surface. 1. A method of cleaning an aluminum or anodized aluminum surface of a component of a plasma chamber in which semiconductor substrates are processed , the method comprising:soaking the surface in a diluted sulfuric peroxide (DSP) solution;spray rinsing the surface with water following removal of the surface from the DSP solution;{'sub': '3', 'soaking the surface in a dilute nitric acid (HNO) solution;'}spray rinsing the surface with water following removal of the surface from the nitric acid solution; andrepeating at least twice the steps of soaking the surface in dilute nitric acid followed by spray rinsing the surface.2. The method of claim 1 , further comprising performing the following steps before soaking the surface in the diluted sulfuric peroxide (DSP) solution:soaking the surface in acetone;soaking the surface in isopropyl alcohol (IPA) following removal of the surface from the acetone; andspray rinsing the surface with water (Ultra Pure Water) following removal of the surface from IPA.3. The method of claim 1 , further comprising performing an ultrasonic cleaning on the surface after repeating at least twice the steps of soaking the surface in nitric acid followed by spray rinsing the surface.4. The method of claim 3 , further comprising spray rinsing and blow drying the surface following ultrasonic cleaning using clean dry air ( ...

METHOD OF POLISHING A METAL SURFACE OF A BARRIER DOOR OF A GATE VALVE USED IN A SEMICONDUCTOR CLUSTER TOOL ARCHITECTURE

The method of preserving the anodized finish of a barrier door of a process module includes bonding a seal to a metal surface, anodizing the metal surface, and then using a CNC machine to polish the metal surface without damaging the seal. The metal surface is polished by traversing a polishing path along the metal surface with a polishing head maintaining frictional contact with the metal surface. The integrity of the seal is preserved by bounding the polishing head to skirt the edge of the seal by following the polishing path. 1. A method of polishing a metal sealing surface of a barrier door of a gate valve , the method comprising:bonding a seal within a groove formed in an interior face of the metal sealing surface of the barrier door for the gate valve;anodizing the metal sealing surface of the barrier door for the gate valve, after the seal is bonded to the metal sealing surface of the barrier door for the gate valve;traversing a polishing path along the metal sealing surface of the barrier door for the gate valve with a polishing head, wherein the polishing head engages in frictional contact with the metal sealing surface of the barrier door for the gate valve; andskirting an edge of the seal with the polishing head, while the polishing path is traversed, wherein the polishing head polishes the metal sealing surface immediately adjacent to the edge.2. The method of claim 1 , wherein the metal sealing surface of the barrier door for the gate valve comprises aluminum.3. The method of claim 1 , wherein the metal sealing surface is type III hard anodized.4. The method of claim 1 , wherein the seal is an elastomer seal.5. The method of claim 4 , wherein the elastomer seal is a rubber seal.6. The method of claim 4 , wherein the elastomer seal is a fluoroelastomer seal.7. The method of claim 4 , wherein the elastomer seal is a perfluoroelastomer seal.8. The method of claim 4 , wherein the elastomer seal is vulcanized while the elastomer seal is bonded to the metal ...

FILM ADHESIVE FOR SEMICONDUCTOR VACUUM PROCESSING APPARATUS

A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of ≧800% at a temperature range between room temperature and 300° C. such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.

PROCESSING CHAMBER WITH FEATURES FROM SIDE WALL

A processing chamber having a chamber housing with a top and sidewalls is provided. The processing chamber has a seal for connecting the sidewalls of the chamber housing to a top of a lower chamber below the processing chamber. A substrate holder is attached to the sidewalls of the chamber housing. Further, a wafer lift ring supported by a side arm extending through the sidewalls has at least three posts each having at least one finger, the top of the fingers defining a first wafer handoff plane. The lower chamber has at least one lowest wafer support that defines a second wafer handoff plane where the height between the first wafer handoff plane and the second wafer handoff plane is not greater than a maximum vertical stroke of a transfer arm that is configured to transfer a wafer from the first wafer handoff plane and the second wafer handoff plane. 1. A processing chamber , comprising:a chamber housing having a top and sidewalls;a seal for connecting the sidewalls of the chamber housing to a top of a lower chamber positioned below the processing chamber;a substrate holder that is attached to the sidewalls of the chamber housing;a wafer lift ring supported by a side arm extending through the sidewalls of the chamber housing, wherein the wafer lift ring has at least three posts that stand vertically, each post having at least one finger that extends horizontally from the post, and wherein the top of the fingers of the wafer lift ring in an up position define a first wafer handoff plane; anda lower chamber positioned below the processing chamber, the lower chamber having at least one wafer support, wherein the top of the lowest at least one wafer support defines a second wafer handoff plane,wherein the height between the first wafer handoff plane and the second wafer handoff plane is not greater than a maximum vertical stroke of a transfer arm that is configured to transfer a wafer from the first wafer handoff plane and the second wafer handoff plane.2. The chamber ...

Gas distribution apparatus and method for uniform etching

An apparatus for providing different gases to different zones of a processing chamber comprises a gas supply (1880) for providing an etching gas flow; a flow splitter (1831, 1836 - 1840) in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs (1812, 1814, 1833, 1834) and a tuning gas system (1860- 1862, 1865 - 1868) in fluid connection to at least one of the legs of the plurality of legs (1812, 1814).

Quartz guard ring centering features

An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.

Guard ring assembly for a plasma reaction chamber in semiconductor substrate processing, electrode assembly including the same, and method for centering the same

Gas distribution apparatus and method for uniform etching

石英擋板環

Quartz guard ring

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode.

Quartz guard ring

Processing chamber with features from side wall

A processing chamber having a chamber housing with a top and sidewalls is provided. The processing chamber has a seal for connecting the sidewalls of the chamber housing to a top of a lower chamber below the processing chamber. A substrate holder is attached to the sidewalls of the chamber housing. Further, a wafer lift ring supported by a side arm extending through the sidewalls has at least three posts each having at least one finger, the top of the fingers defining a first wafer handoff plane. The lower chamber has at least one lowest wafer support that defines a second wafer handoff plane where the height between the first wafer handoff plane and the second wafer handoff plane is not greater than a maximum vertical stroke of a transfer arm that is configured to transfer a wafer from the first wafer handoff plane and the second wafer handoff plane.