10-07-2014 дата публикации
Номер: US20140190399A1
A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas. 1. A method comprising:providing an off-axis silicon carbide substrate; andetching the surface of the substrate with a dry gas, hydrogen, or an inert gas.2. The method of claim 1 , wherein the substrate is a 4H-SiC substrate.3. The method of claim 1 , wherein the substrate is a 6H-SiC substrate4. The method of claim 1 , wherein the substrate is a 0-8° off-axis 4H-SiC substrate.5. The method of claim 1 , wherein the etching is performed with hydrogen.6. The method of claim 1 , wherein the etching is performed with silane.7. The method of claim 1 , wherein the etching is performed with argon.8. The method of claim 1 , wherein the etching is performed at 1450-1800° C.9. The method of claim 1 , wherein the etching is performed at 30-500 mbar of the dry gas.10. The method of claim 1 , wherein the etching is performed for up to 90 minutes.11. The method of claim 1 , further comprising:growing a doped buffer layer on the substrate after the etching.12. The method of claim 11 , wherein the doped buffer layer is doped with N.13. The method of claim 11 , wherein the doped buffer layer is doped with P.14. The method of claim 11 , wherein the doped buffer layer is about 0.5-30 μm thick.15. The method of claim 11 , further comprising:growing an epitaxial silicon carbide layer on the doped buffer layer. This application claims the benefit of U.S. Provisional Application No. 61/787,903, filed on Mar. 15, 2013. This application is a continuation-in-part application of pending U.S. patent application Ser No. 12/860,844, filed on Aug. 20, 2010, which claims the benefit of U.S. Provisional Application No. 61/235,455, filed on Aug. 20, 2009. These applications and all other publications or patent documents cited throughout this application are incorporated herein by reference.The present disclosure is generally related to SiC epitaxial growth ...
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