Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Refractory metal ceramics and methods of making thereof

A composition having nanoparticles of a refractory-metal carbide or refractory-metal nitride and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising a metal component and an organic component. The metal component is nanoparticles or particles of a refractory metal or a refractory-metal compound capable of decomposing into refractory metal nanoparticles. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining particles of a refractory metal or a refractory-metal compound capable of reacting or decomposing into refractory-metal nanoparticles with an organic compound having a char yield of at least 60% by weight to form a precursor mixture.

Ceramic material made from siloxane-acetylene polymer containing metal-acetylene complex

A ceramic made by providing a composition and pyrolyzing the composition. The composition has siloxane polymer, metallic polymer, siloxane thermoset, and/or metallic thermoset having a backbone having: an acetylenic repeat unit; and —SiR 2 —(O—SiR 2 ) n — and/or —SiR 2 —(O—SiR 2 ) n -[Cb-SiR 2 —(O—SiR 2 ) n ] m —. R is an organic group, Cb is a carborane, and n and m are integers greater than or equal to zero. Any crosslinking is a crosslink between acetylene groups and/or a polycarbosiloxane crosslink. The composition also has free metal atoms, metal clusters, or metal nanoparticles dispersed homogeneously throughout the composition; (ML x ) y -acetylene complex in the backbone; and/or a metallic compound for forming a (ML x ) y -acetylene complex. M is a metal, L is a ligand, x and y are positive integers.

Monoclinic india stabilized gadolinia

A composition comprising india stabilized gadolinia wherein the india stabilized gadolinia is an oxide with a direct substitution of the indium ion for the gadolinia ion resulting in a compound with the formula InxGd2-xO3.

Formation of boron carbide-boron nitride carbon compositions

A composition having nanoparticles of a boron carbide and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising boron and an organic component. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining boron and an organic compound having a char yield of at least 60% by weight, and heating to form boron carbide or boron nitride nanoparticles.

Bulk synthesis of carbon nanotubes from metallic and ethynyl compounds

A process of making carbon nanotubes comprising the steps of: providing a precursor composition comprising at least one metallic compound and at least one organic compound; wherein the organic compound is selected from the group consisting of an ethynyl compound, a metal-ethynyl complex, and combinations thereof; wherein the precursor composition is a liquid or solid at room temperature; and heating the precursor composition under conditions effective to produce carbon nanotubes. A carbon nanotube composition comprising carbon nanotubes and a metal component selected from the group consisting of metal nanoparticles and elemental metal; wherein the carbon nanotube composition is rigid.

Pyrolytic formation of metallic nanoparticles

A method and a ceramic made therefrom by: providing a composition of a compound having the formula below and a metallic component, and pyrolyzing the composition. R is an organic group. The value n is a positive integer. Q is an acetylenic repeat unit having an acetylene group, crosslinked acetylene group, (MLx)y-acetylene complex, and/or crosslinked (MLx)y-acetylene complex. M is a metal. L is a ligand. The values x and y are positive integers. The metallic component is the (MLx)y-acetylene complex in the compound or a metallic compound capable of reacting with the acetylenic repeat unit to form the (MLx)y-acetylene complex. The ceramic comprises metallic nanoparticles.

Silicon carbide synthesis

This disclosure concerns a method of making silicon carbide involving adding agricultural husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).

Silicon carbide synthesis from agricultural waste

This disclosure concerns a method of making silicon carbide involving adding one from the group of rice husk material, sorghum, peanuts, maple leaves, and/or corn husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).

Refractory metal boride ceramics and methods of making thereof

A composition having nanoparticles of a refractory-metal boride and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising a metal component, boron, and an organic component. The metal component is nanoparticles or particles of a refractory metal or a refractory-metal compound capable of decomposing into refractory metal nanoparticles. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining particles of a refractory metal or a refractory-metal compound capable of reacting or decomposing into refractory-metal nanoparticles, boron, and an organic compound having a char yield of at least 60% by weight to form a precursor mixture. A composition having nanoparticles of a refractory-metal boride that is not in the form of a powder.

Refractory metal ceramics and methods of making thereof

A composition having nanoparticles of a refractory-metal carbide or refractory-metal nitride and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising a metal component and an organic component. The metal component is nanoparticles or particles of a refractory metal or a refractory-metal compound capable of decomposing into refractory metal nanoparticles. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining particles of a refractory metal or a refractory-metal compound capable of reacting or decomposing into refractory-metal nanoparticles with an organic compound having a char yield of at least 60% by weight to form a precursor mixture.

REFRACTORY METAL BORIDE CERAMICS AND METHODS OF MAKING THEREOF

A composition having nanoparticles of a refractory-metal boride and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising a metal component, boron, and an organic component. The metal component is nanoparticles or particles of a refractory metal or a refractory-metal compound capable of decomposing into refractory metal nanoparticles. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining particles of a refractory metal or a refractory-metal compound capable of reacting or decomposing into refractory-metal nanoparticles, boron, and an organic compound having a char yield of at least 60% by weight to form a precursor mixture. A composition having nanoparticles of a refractory-metal boride that is not in the form of a powder. 1. A composition comprising:nanoparticles of a refractory-metal boride; anda carbonaceous matrix;wherein the composition is not in the form of a powder.2. The composition of claim 1 , wherein the nanoparticles comprise titanium boride.3. The composition of claim 1 , wherein the nanoparticles comprise zirconium boride claim 1 , hafnium boride claim 1 , tungsten boride claim 1 , or tantalum boride.4. The composition of claim 1 , wherein the refractory metal is a group IV-VI transition metal claim 1 , niobium claim 1 , molybdenum claim 1 , chromium claim 1 , or vanadium.5. The composition of claim 1 , wherein the composition comprises at least 5% by weight of the nanoparticles.6. The composition of claim 1 , wherein the composition comprises at least 99% by weight of the nanoparticles.7. The composition of claim 1 , wherein the average diameter of the nanoparticles is less than 100 nm.8. The composition of claim 1 , wherein the carbonaceous matrix comprises graphitic carbon claim 1 , carbon nanotubes claim 1 , or amorphous carbon.9. The composition of claim 1 , wherein the composition further comprises: ...

FORMATION OF SILICON CARBIDE-SILICON NITRIDE NANOPARTICLE CARBON COMPOSITIONS

A composition having nanoparticles of silicon carbide and a carbonaceous matrix or silicon matrix. The composition is not in the form of a powder. A composition having silicon and an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining silicon and the organic compound and heating to form silicon carbide or silicon nitride nanoparticles. 1. A composition comprising:nanoparticles of silicon carbide; and 'wherein the composition is not in the form of a powder.', 'a carbonaceous matrix or silicon matrix;'}2. The composition of claim 1 , wherein the composition comprises at least 5% by weight of the nanoparticles.3. The composition of claim 1 , wherein the composition comprises at least 99% by weight of the nanoparticles.4. The composition of claim 1 , wherein the average diameter of the nanoparticles is less than 100 nm.5. The composition of claim 1 , wherein the nanoparticles comprise α-SiC.6. The composition of claim 1 , wherein the nanoparticles comprise β-SiC.7. The composition of claim 1 , wherein the carbonaceous matrix comprises graphitic carbon claim 1 , carbon nanotubes claim 1 , or amorphous carbon.8. The composition of claim 1 , wherein the composition further comprises:nanoparticles comprising silicon nitride.9. The composition of claim 1 , wherein the composition further comprises:nanoparticles comprising silicon boron carbide.10. The composition of claim 1 , wherein the composition further comprises:fibers, carbon fibers, ceramic fibers, or metal fibers.11. The composition of claim 1 , wherein the composition contains less than 20% by volume of voids.12. An article comprising the composition of claim 1 , wherein the article is in the form of a solid claim 1 , unbroken mass having a minimum size of at least 1 mm in all dimensions.13. A composition comprising:silicon; and an organic compound having a char yield of at least 60% by weight; and', 'a thermoset made from the organic ...

Formation of boron carbide-boron nitride carbon compositions

A composition having nanoparticles of a boron carbide and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising boron and an organic component. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining boron and an organic compound having a char yield of at least 60% by weight, and heating to form boron carbide or boron nitride nanoparticles.

Silicon Carbide Synthesis from Agricultural Waste

This disclosure concerns a method of making silicon carbide involving adding one from the group of rice husk material, sorghum, peanuts, maple leaves, and/or corn husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC). 1. A method of making SiC comprising:adding one selected from the group consisting of rice husk material, sorghum, nuts, nut shells, maple leaves, fruit pits, and corn husk material to a container;creating a vacuum or an inert atmosphere inside the container;applying heat;heating rapidly the one selected from the group consisting of rice husk material, sorghum, nuts, nut shells, maple leaves, fruit pits, and corn husk material; andreacting the one selected from the group consisting of rice husk material, sorghum, nuts, nut shells, maple leaves, fruit pits, and corn husk material and forming silicon carbide.2. The method of further comprising the step of:heating the one selected from the group consisting of rice husk material, sorghum, nuts, nut shells, maple leaves, fruit pits, and corn husk material to a temperature of about 1400-1500° C.3. The method of wherein the silicon carbide is nanoparticles and nanorods of SiC in a pure form.4. The method of further comprising the step of:maintaining the temperature of about 1400-1500° C. for about 1 to about 10 minutes.5. The method of further comprising the step of:cooling the container.6. The method of wherein the step of heating is accomplished by using a millimeter-wave beam and wherein the frequency of the millimeter-wave beam is about 83 GHz claim 5 , the total beam power is about 5 kW claim 5 , and the power density is about 0.3 kW/cm.7. The method of wherein the container is a covered boron nitride crucible with a hole for temperature measurement.8. The method of wherein the vacuum is a modest vacuum environment which prevents oxidation ...

Monoclinic India Stabilized Gadolinia

A composition comprising india stabilized gadolinia wherein the india stablilized gadolinia is an oxide with a direct substitution of the indium ion for the gadolinia ion resulting in a compound with the formula In x Gd 2-x O 3 .

Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and its alloys with AlN at Low Temperatures

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN Films and its alloys with AlN at Low Temperatures

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Aluminum Nitride Synthesis from Nut Shells

Nano-structures of Aluminum Nitride and a method of producing nano-structures of Aluminum Nitride from nut shells comprising milling agricultural nuts into a fine nut powder, milling nanocrystalline Al2O3 into a powder, mixing, pressing the fine nut powder and the powder of nanocrystalline Al2O3, heating the pellet, maintaining the temperature of the pellet at about 1400° C., cooling the pellet, eliminating the residual carbon, and forming nano-structures of AlN. An Aluminum Nitride (AlN) product made from the steps of preparing powders of agricultural nuts using ball milling, preparing powders of nanocrystalline Al2O3, mixing the powders of agricultural nuts and the powders of nanocrystalline Al2O3 forming a homogenous sample powder of agricultural nuts and Al2O3, pressurizing, pyrolyzing the disk, and reacting the disk and the nitrogen atmosphere and forming AlN.

Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys with AlN and GaN

Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of In x Ga 1−x N, Al x Ga 1−x N, Al x In 1−x N, or Al x In y Ga 1−(x+y) N

Aluminum Nitride Synthesis from Nut Shells

A method of making Aluminum Nitride (AlN) from nut shells comprising preparing powders of agricultural nuts, preparing powders of nanocrystalline Al 2 O 3 , mixing the powders and thereby forming a homogenous sample powder of agricultural nuts and Al 2 O 3 , pressurizing the homogenous sample powder into a disk, heat treating or pyrolyzing the disk in a nitrogen atmosphere, reacting the disk and the nitrogen atmosphere and forming AlN, and wherein the AlN is nano-structured AlN and in a pure form and in the wurtzite phase of AlN. A method of producing Aluminum Nitride comprising milling nuts into a powder, milling a powder of nanocrystalline Al 2 O 3 , mixing, pressing into a pellet, providing nitrogen, heating, and forming AlN. An Aluminum Nitride product from preparing powders of nuts and Al 2 O 3 , mixing, and forming a powder, pressurizing into a disk, pyrolyzing in nitrogen, and forming AlN.

Synthesis of Nanostructured Zinc Silicate from Renewable Sources

A method of making Nanostructured Zinc Silicate from renewable sources comprising preparing powders of husks, preparing powders of ZnO, mixing the powders of husks and the powders of ZnO and forming a homogenous sample powder, pressing the homogenous sample and forming pellets, heating the pellets and forming nanostructured zinc silicate. The nanostructured zinc silicate from renewable sources product of the process of preparing powders of husks, preparing powders of ZnO, mixing the powders of husks and the powders of ZnO and forming a homogenous sample powder, pressing the homogenous sample and forming pellets, heating the pellets and forming nanostructured zinc silicate. 1. A method of making Nanostructured Zinc Silicate from renewable sources comprising:preparing powders of husks wherein the husks are selected from the group consisting of wheat husk, rice husk, and a combination of wheat husk and rice husk using ball milling with a SPEX 8000M including stainless steel milling media;preparing powders of ZnO using ball milling with a SPEX 8000M including stainless steel milling media;mixing the powders of husks and the powders of ZnO using ball milling with a SPEX 8000M including stainless steel milling media and thereby forming a homogenous sample powder;pressing the homogenous sample powder into disks having a diameter of 1 cm and thickness of 2-3 mm and forming pellets;heating the pellets at a temperature above 1400° C. and forming nanostructured zinc silicate pellets; andremoving excess carbon by processing the nanostructured zinc silicate pellets in air at a temperature of 650° C.2. The method of making Nanostructured Zinc Silicate from renewable sources of further comprising the steps ofwashing the husks in distilled water prior to the step of preparing powders of husks wherein the husks are selected from the group consisting of wheat husk, rice husk, and a combination of wheat husk and rice husk using ball milling with a SPEX 8000M including stainless steel ...

Nanostructured Silicon Nitride Synthesis from Agriculture Waste

Si 3 N 4 nanotubes and nanorods wherein the nanotubes and nanorods of silicon nitride are pure α-Si 3 N 4 formed by carbothermal reduction of SiO 2 from reacting agricultural husk material in heat and forming the silicon nitride nanotubes and nanorods.

Silicon Carbide Synthesis

This disclosure concerns a method of making silicon carbide involving adding agricultural husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC). 1. A method of making SiC comprising:adding agricultural husk material to a container;creating a vacuum or an inert atmosphere inside the container;applying heat;heating rapidly the agricultural husk material; andreacting the agricultural husk material and forming silicon carbide.2. The method of further comprising the step of:heating the agricultural husk material to a temperature of about 1400-1500° C.3. The method of wherein the silicon carbide is nanoparticles and nanorods of SiC in a pure form.4. The method of further comprising the step of:maintaining the temperature of about 1400-1500° C. for about 1 to about 10 minutes.5. The method of further comprising the step of:cooling the container.6. The method of wherein the step of heating is accomplished by using a millimeter-wave beam and wherein the frequency of the millimeter-wave beam is about 83 GHz claim 5 , the total beam power is about 5 kW claim 5 , and the power density is about 0.3 kW/cm.7. The method of wherein the container is a covered boron nitride crucible with a hole for temperature measurement.8. The method of wherein the vacuum is a modest vacuum environment which prevents oxidation and silica formation.9. A method of producing nanorods and nanoparticles of silicon carbide comprising:milling husks into a fine husk powder;mixing the fine husk powder with a Polyvinyl alcohol (PVA) binder in a ratio of 0.95 husk to 0.05 PVA by weight;pressing the fine husk powder into a pellet;applying a millimeter-wave beam to the pellet;heating the pellet to a temperature of about 1900° C.;maintaining the heat;cooling the pellet; andforming nanorods and nanoparticles of silicon carbide and other products.10 ...

Suppression of Samson Phase Formation in Al-Mg Alloys by Boron Addition

An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. A method of suppressing the Samson phase, Al3Mg2, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.

Aluminum Nitride Synthesis from Nut Shells

A method of producing Aluminum Nitride comprising milling nuts into a powder, milling a powder of nanocrystalline Al 2 O 3 , mixing, pressing into a pellet, providing nitrogen, heating, and forming AlN. An Aluminum Nitride product from preparing powders of nuts and Al 2 O 3 , mixing, and forming a powder, pressurizing into a disk, pyrolizing in nitrogen, and forming AlN in a pure form and in the wurtzite phase. An Aluminum Nitride (AlN) from preparing powders of agricultural nuts, preparing powders of nanocrystalline Al 2 O 3 , mixing the powders and thereby forming a homogenous sample powder of agricultural nuts and Al 2 O 3 , pressurizing the homogenous sample powder into a disk, heat treating or pyrolizing the disk in a nitrogen atmosphere, reacting the disk and the nitrogen atmosphere and forming AlN, and wherein the AlN is nano-structured AlN and in a pure form and in the wurtzite phase of AlN.

Indium Nitride Material

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Insertion of elements within boron carbide

A method and resulting composition made by: providing boron carbide and a dopant selected from silicon, aluminum, magnesium, and beryllium; and ball milling the boron carbide with the dopant until at least one out of fifteen of the boron and/or carbon atoms of the boron carbide are substituted with the dopant.

Suppression of Samson Phase Formation in Al-Mg Alloys by Boron Addition

A method of suppressing the Samson phase, Al3Mg2, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.

Nanostructured Silicon Nitride Synthesis from Agriculture Waste

A method of making Si 3 N 4 nanotubes and nanorods comprising adding agricultural husk material powder to a container, wherein the container is a covered boron nitride crucible, creating an inert atmosphere of nitrogen inside the container, applying heat, heating the agricultural husk material, and reacting the agricultural husk material and forming silicon nitride, wherein the silicon nitride is nanotubes and nanorods.

Synthesis of metal nanoparticle compositions from metallic and ethynyl compounds

A process of making metal nanoparticles comprising the steps of:aproviding a precursor composition comprising at least one metallic compound and at least one organic compound; wherein the organic compound is selected from the group consisting of an ethynyl compound, a metal-ethynyl complex, and combinations thereof; wherein the precursor composition is a liquid or solid at room temper ature; and heating the precursor composition under conditions effective to produce metal nanoparticles. A metal nanoparticle composition comprising metal nanopraticles dispersed homogenously in a matrix selected from the group consisting of ethynyl polymer, crosslinked ethynyl polymer, amorphous carbon, carbon nanotubes, c arbon nanoparticles, graphite, and combinations thereof.

Refractory metal ceramics and methods of making thereof

A composition having nanoparticles of a refractory-metal carbide or refractory-metal nitride and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising a metal component and an organic component. The metal component is nanoparticles or particles of a refractory metal or a refractory-metal compound capable of decomposing into refractory metal nanoparticles. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining particles of a refractory metal or a refractory-metal compound capable of reacting or decomposing into refractory-metal nanoparticles with an organic compound having a char yield of at least 60% by weight to form a precursor mixture.

Refractory metal boride ceramics and methods of making thereof

Stabilized zirconia/CoCRAlY high temperature coating

A corrosion resistant structure having an outer ceramic layer of alumina stabilized zirconia resistant to oxidation at high temperatures, over a base alloy selected from the group consisting of CoCrAlY and NiCrAlY and applied to the base alloy by physical vapor deposition process, such as reactive magnetron sputtering wherein the outer ceramic layer has a thickness of from about 0.5 μm to about 200 μm.

Formation of silicon carbide-silicon nitride nanoparticle carbon compositions

A composition having nanoparticles of silicon carbide and a carbonaceous matrix or silicon matrix. The composition is not in the form of a powder. A composition having silicon and an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining silicon and the organic compound and heating to form silicon carbide or silicon nitride nanoparticles.

Nanoparticle phosphors manufactured using the bicontinuous cubic phase process

Nanocrystalline phosphors are formed within a bicontinuous cubic phase. The phosphors are doped with an optimum concentration, of manganese, for example, corresponding to about one or less dopant ions per phosphor particle.

Refractory metal ceramics and methods of making thereof

Nanostructured silicon nitride synthesis from agriculture waste

A method of making Si3N4 nanotubes and nanorods comprising adding agricultural husk material powder to a container, wherein the container is a covered boron nitride crucible, creating an inert atmosphere of nitrogen inside the container, applying heat, heating the agricultural husk material, and reacting the agricultural husk material and forming silicon nitride, wherein the silicon nitride is nanotubes and nanorods.

Nanostructured silicon nitride synthesis from agriculture waste

Si3N4 nanotubes and nanorods wherein the nanotubes and nanorods of silicon nitride are pure α-Si3N4 formed by carbothermal reduction of SiO2 from reacting agricultural husk material in heat and forming the silicon nitride nanotubes and nanorods.

Low Temperature Plasma-Assisted Atomic Layer Epitaxy of Hexagonal InN Films and its Alloys with AlN

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal InN using a pulsed growth method at a temperature lower than 300° C.

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Nano-structured Aluminum Nitride (AlN) in a pure form and in the wurtzite phase of AlN from nut shells

Nano-structures of Aluminum Nitride and a method of producing nano-structures of Aluminum Nitride from nut shells comprising milling agricultural nuts into a fine nut powder, milling nanocrystalline Al2O3 into a powder, mixing, pressing the fine nut powder and the powder of nanocrystalline Al2O3, heating the pellet, maintaining the temperature of the pellet at about 1400° C., cooling the pellet, eliminating the residual carbon, and forming nano-structures of AlN. An Aluminum Nitride (AlN) product made from the steps of preparing powders of agricultural nuts using ball milling, preparing powders of nanocrystalline Al2O3, mixing the powders of agricultural nuts and the powders of nanocrystalline Al2O3 forming a homogenous sample powder of agricultural nuts and Al2O3, pressurizing, pyrolizing the disk, and reacting the disk and the nitrogen atmosphere and forming AlN.

Plasma-assisted atomic layer epitaxy of cubic and hexagonal inn films and its alloys with ain at low temperatures

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300 °C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Aluminum nitride synthesis from nut shells

A method of making Aluminum Nitride (AlN) from nut shells comprising preparing powders of agricultural nuts, preparing powders of nanocrystalline Al2O3, mixing the powders and thereby forming a homogenous sample powder of agricultural nuts and Al2O3, pressurizing the homogenous sample powder into a disk, heat treating or pyrolyzing the disk in a nitrogen atmosphere, reacting the disk and the nitrogen atmosphere and forming AlN, and wherein the AlN is nano-structured AlN and in a pure form and in the wurtzite phase of AlN. A method of producing Aluminum Nitride comprising milling nuts into a powder, milling a powder of nanocrystalline Al2O3, mixing, pressing into a pellet, providing nitrogen, heating, and forming AlN. An Aluminum Nitride product from preparing powders of nuts and Al2O3, mixing, and forming a powder, pressurizing into a disk, pyrolyzing in nitrogen, and forming AlN.

Enhancing the Strength of Al-B4C Composites to a High Degree by Mg Addition

A method of making an Al—B4C composite with Mg addition comprising providing a first mixture of B4C, Al and Mg powder, producing a powder mixture, adding Mg to the powder mixture, forming pellets, creating a composite, annealing the composite, and forming an Al—Mg—B4C composite. An Al—B4C composite with Mg addition comprising Al, Mg comprising 4 wt. %, and B4C comprising 8 wt. %. An Al—B4C composite with Mg addition made from the steps comprising providing a first mixture of B4C, Al and Mg powder, producing a powder mixture, adding Mg to the powder mixture, forming pellets, creating a composite, annealing the composite, and forming an Al—Mg—B4C composite.

Polymeric and carbon compositions with metal nanoparticles

The invention comprises a chemical composition with the structure shown below. The composition can be polymerized or pyrolyzed, forming transition metal nanoparticles homogeneously dispersed in a thermoset or carbon composition. (I) wherein A is selected from the group consisting of H, (II), and (III) wherein M is a metal selected independently from the group consisting of Fe, Mn, Ru, Co, Ni, Cr and V; wherein Rx is independently selected from the group consisting of an aromatic, a substituted aromatic group and combinations thereof; wherein Ry independently selected from the group consisting of an aromatic, a substituted aromatic group and combination thereof; wherein m is ≥0; wherein s is ≥0; wherein z is ≥0; and wherein m and s are independently determined in each repeating unit.

Polymeric and carbon compositions with metal nanoparticles

The invention comprises a chemical composition with the structure shown below. The composition can be polymerized or pyrolyzed, forming transition metal nanoparticles homogeneously dispersed in a thermoset or carbon composition. (I) wherein A is selected from the group consisting of H, (II), and (III) wherein M is a metal selected independently from the group consisting of Fe, Mn, Ru, Co, Ni, Cr and V; wherein Rx is independently selected from the group consisting of an aromatic, a substituted aromatic group and combinations thereof; wherein Ry independently selected from the group consisting of an aromatic, a substituted aromatic group and combination thereof; wherein m is ≥0; wherein s is ≥0; wherein z is ≥0; and wherein m and s are independently determined in each repeating unit.

Suppression of Samson phase formation in Al—Mg alloys by boron addition

An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. A method of suppressing the Samson phase, Al3Mg2, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.

Insertion of elements within boron carbide

A method and resulting composition made by: providing boron carbide and a dopant selected from silicon, aluminum, magnesium, and beryllium; and ball milling the boron carbide with the dopant until at least one out of fifteen of the boron and/or carbon atoms of the boron carbide are substituted with the dopant.