Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device

A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate

A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2gas, N2O gas, and N2O4gas; and growing the group III nitride crystal on the seed substrate.

Group-III nitride substrate

A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

Drive belt pulley and belt drive system

A hollow cylindrical pulley body 5 is carried rotatably by a hollow cylindrical shaft member 11. A support rod 8 is inserted in the shaft member 11, and the shaft member 11 is elastically supported to the support rod 8 through an elastic body 10. The elastic body 10 is provided within a quarter of the periphery of the support rod 8 that is located, when viewed along the axis of the shaft member 11, forward of the line of action of a radial shaft load on the shaft member 11 with respect to the direction of rotation of the pulley body 5. With this configuration, when the drive belt 3 deviates to one side, the pulley body 5 is immediately angularly moved so that it is inclined with a level difference with respect to the direction of the radial shaft load and is positioned obliquely relative to the drive belt 3. In this manner, a force of compensating for the deviation of the drive belt 3 is produced to avoid its wobbling.

Electroconductive silicon nitride based composite sintered body and method for preparation thereof

A conductive silicon nitride composite sintered body having an average grain size of 100 nm or less and whose relative roughness (Ra) after electric discharge machining is 0.3 μm or less can be obtained by grinding/mixing a silicon nitride powder and a metal powder together until the average particle size of the silicon nitride powder becomes 30 nm or less, and subsequently by molding and sintering. It is preferable that the crushing/mixing is continued until it is apparent that a peak of added metal in an X-ray diffraction pattern has disappeared during the crushing/mixing.

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL, AND SEMICONDUCTOR DEVICE

The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer () as seed crystals for generation and growth of Group III nitride crystals (); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals () grown from the plural seed crystals by the growth of the Group III nitride crystals () are bound. 1. A method for producing a Group III nitride crystal , comprising:a seed crystal selection step of selecting plural parts of previously-provided Group III nitride as seed crystals for generation and growth of Group III nitride crystals;a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt;a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow Group III nitride crystals, whereinthe seed crystals are hexagonal crystals,in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not almost coincide with each other, andin ...

Method for preparing borate-based crystal and laser oscillation apparatus

A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.

Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step

A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

Motor grader

A motor grader includes a frame and a work implement. The frame is box-shaped. The work implement is configured to be supported by the frame. The frame includes a bracket, a first frame part and a second frame part. The bracket has left and right side surfaces with which a lifter guide is formed in an integrated manner. The first frame part is configured to extend forward from a front end part of the bracket and support the work implement. The second frame part is configured to extend rearward from a rear end part of the bracket.

Ceramic Composite Material and Method of Its Manufacture

Ceramic composite material that has excellent mechanical properties within a range from room temperature to high temperature and high die release with respect to glass, resins, ceramics, and similar substances. The ceramic composite material is composed of a ceramic phase and a phase containing 2 to 98 wt. % carbon and/or boron nitride as the main component, and that has a mean particle size of 100 nm or less, wherein the thermal expansion coefficient is within a range of 2.0-9.0×10−6/° C. and the surface roughness after surface polishing is 0.05 μm or less. The sintered body of the material is obtained by sintering a mixture of powdered starting materials at a sintering temperature of 800-1500° C. and a sintering pressure of 200 MPa or higher.

Method for producing group III nitride crystal and seed substrate

An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

Method for producing group III nitride single crystal and apparatus used therefor

A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

Method for producing semiconductor crystal

The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that ...

METHOD OF PRODUCING POLYCRYSTALLINE TRANSPARENT CERAMIC SUBSTRATE AND METHOD OF PRODUCING SPINEL SUBSTRATE

There is provided a method of producing a polycrystalline transparent ceramic substrate used in a transparent substrate or the like for a liquid crystal projector. The method of producing a polycrystalline transparent ceramic substrate is characterized in comprising a step for sintering a ceramic body molded into a predetermined shape and producing a polycrystalline transparent ceramic sintered body, a step for cutting the polycrystalline transparent ceramic sintered body and producing a plurality of polycrystalline transparent ceramic cut bodies, a step for polishing the cut surfaces of the polycrystalline transparent ceramic cut bodies and producing polycrystalline transparent ceramic polished bodies, and a step for applying an antireflection coating to the polycrystalline transparent ceramic polished bodies and producing coated polycrystalline transparent ceramic bodies.

Enclosed mechanical booster

To improve reliability of a shaft sealing portion of a mechanical booster and simplify the structure, in a mechanical booster 1 having a motor 3 in tight contact with to a mechanical booster body 2 and rotating the shaft part 4, inserting a metal cylinder into a gap between a stator on a rotary shaft of the motor 3 and a fixed coil on the outside for partitioning stator area and a fixed coil area by the cylinder, supporting the both end of the rotary shaft of the motor 3 by bearings sealed with lubricant, and inserting a bearing fitting portion of a motor cover 30 into inside of the cylinder, the motor is sealed with a seal ring. The cylinder is made of stainless steel. A jacket water cooler is provided in the motor cover 30 around at area close to outside. The shaft part 4 of the mechanical booster body 2 is supported by bearings sealed with lubricant.

Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020cm−3or more, and the concentration of the hydrogen element is 1×1019cm−3or more.

Wavelength conversion crystal and method for generating laser beam, and apparatus for generating laser beam

As a wavelength conversion crystal whose double refraction index is controllable, a crystal represented by a formula (I), M1xM21-xCa4O(BL3)3, where each of M1 and M2 represents one or more types of different rare earth elements and 0 Подробнее

Method for preparing borate-based crystal and laser oscillation apparatus

A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.

Dry screw vaccum pump having nitrogen injection

A dry vacuum pump assembly that includes a casting having an inner chamber, an inlet and an outlet communicating with the inner chamber, a pair of right and left handed screw rotors positioned in the casing, each screw rotor having a cross section formed by a Quimby curve, a circular arc, and a quasi-Archimedean spiral curve, the pair of screw rotors intermeshing with each other to pump a process gas pumped from the inlet to the outlet. The pump assembly further includes a nitrogen-supplying tube that communicates with the inner chamber at a position near the outlet in the casing, and an external pipe that connects the outlet to a scrubber or a trap which external pipe is straight and does not include a silencer.

Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal

The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

Nonlinear optical crystal

There is provided a nonlinear optical crystal which is presented by the formula: K2Al2B2O7. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of high practical use. There are also provided a wavelength conversion method using this crystal, and an element and a wavelength conversion apparatus for use in the method.

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

SPINEL LIGHT-TRANSMITTING WINDOW MATERIAL AND METHOD FOR PRODUCING THE SAME

To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 m, and the number of pores having a largest diameter of not less than 10 m is not more than 2.0 per 1 cm3 of the light-transmitting window material, and wherein light scattering factors are further reduced, and a method for producing a spinel light-transmitting window material including the steps of preparing a spinel molded body; a primary sintering step of sintering the spinel molded body at normal pressure or less or in a vacuum at a temperature in the range of 1500 to 1900° C.; and a secondary sintering step of sintering the spinel molded body under pressure at a temperature in the range of 1500 to 2000° C., wherein the relative density of the spinel molded body after the primary sintering step is 95 to 96% and the relative density of the spinel molded body after the secondary sintering step is ...

METHOD OF MANUFACTURING GaN-BASED FILM

The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided. 1. A method of manufacturing a GaN-based film , comprising the steps of:preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of a main surface of said support substrate, said single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of said single crystal film; andforming a GaN-based film on the main surface of said single crystal film in said composite substrate.2. The method of manufacturing a GaN-based film according to claim 1 , wherein{'sup': '2', 'said main surface of said single crystal film in said composite substrate has an area equal to or greater than 45 cm.'}3. The method of manufacturing a GaN-based film according to claim 1 , whereinsaid support substrate of said composite substrate is made of a sintered body containing an oxide.4. The method of manufacturing a GaN-based film according to claim 1 , wherein{'sub': 2', ' ...

METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED THEREFOR

The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Screw type vacuum pump

The present invention aims to provide a vacuum pump allowing a reduced power, a lower inside gas temperature, and a reduced discharging time. The screw vacuum pump has a pair of screw rotors rotatively engaged with each other in a pump casing to discharge a gas along a longitudinal direction of the pump. Each rotor has three types of helical teeth serially located in a longitudinal direction of the rotor and being different from each other in theoretical displacement volume, and a bypass conduit communicating with a delivery side of the pump is connected via a first check valve to a first intermediate space defined between the first helical teeth and the second helical teeth and via a second check valve to a second intermediate space defined between the second helical teeth and the third helical teeth. The three types of helical teeth provide a ratio of 1.4 of a gas flow rate at the first stage to that at the second stage, a ratio of 1.4 of a gas flow rate at the second stage to that of ...

Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device

A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

Lens information management system for surface condition measurement and analysis and information management method for surface condition measurement and analysis

Provided are a system and method for surface condition measurement and analysis to effectively utilize image data photographed when a surface as an object is photographed regularly and continuously. When a surface as an object is sequentially photographed as time passes and the photographed image data is sequentially stored, the sequentially stored images are compared and the presence or absence of image regions among the images that nearly coincide with each other is determined. When there are images with image regions that nearly coincide with each other, a coordinate system having one image as a reference is set, and a position of the other image in the coordinate system is determined. When an image with an undetermined position overlaps with an image with a determined position, including images photographed subsequent thereto, the position of the image is determined.

MOTOR GRADER

A motor grader includes a frame and a work implement. The frame is box-shaped. The work implement is configured to be supported by the frame. The frame includes a bracket, a first frame part and a second frame part. The bracket has left and right side surfaces with which a lifter guide is formed in an integrated manner. The first frame part is configured to extend forward from a front end part of the bracket and support the work implement. The second frame part is configured to extend rearward from a rear end part of the bracket. 1. A motor grader comprising:a frame, the frame being box-shaped; anda work implement configured to be supported by the frame,the frame including a bracket, a first frame part and a second frame part,the bracket having left and right side surfaces with which a lifter guide is formed in an integrated manner,the first frame part being configured to extend forward from a front end part of the bracket and support the work implement,the second frame part being configured to extend rearward from a rear end part of the bracket,the first frame part being directly connected to the front end part of the bracket, andthe second frame part being directly connected to the rear end part of the bracket.2. The motor grader according to claim 1 , whereinthe lifter guide and the bracket are a cast metal.3. The motor grader according to claim 1 , further comprising:a first bead part configured to connect the bracket and the first frame part,the first bead part including a first portion, a second portion and a third portion,the first portion being configured to extend in a crosswise direction and connect a top surface of the bracket and a top surface of the first frame part,the second portion being configured to extend in the crosswise direction and connect a bottom surface of the bracket and a bottom surface of the first frame part,the third portion being configured to extend in a vertical direction and connect one of the left and right side surfaces of the ...

Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device

To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane ...

Wavelength conversion method, wavelength conversion device, and laser beam machine

In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.

Ceramic composite material and method for producing same

Highly wear-resistant, low-friction ceramic composites suited for machining-tool, sliding-component, and mold-die materials are made available. The ceramic composites characterized are constituted from a phase having carbon of 3 μm or less, preferably 30 nm or less, average crystal-grain size as the principal component, and a ceramic phase (with the proviso that carbon is excluded). The ceramic phase is at least one selected from the group made up of nitrides, carbides, oxides, composite nitrides, composite carbides, composite oxides, carbonitrides, oxynitrides, oxycarbonitrides, and oxycarbides of Al, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ceramic composites are produced by sintering the source-material powders at a sintering temperature of 800 to 1500° C. and a sintering pressure of 200 MPa or greater.

Process for producing group III nitride crystal and apparatus for producing group III nitride crystal

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III ...

Drive belt pulley and belt drive system

A hollow cylindrical pulley body 5 is carried rotatably by a hollow cylindrical shaft member 11. A support rod 8 is inserted in the shaft member 11 to support the shaft member 11 for rocking motion about a pivot axis C2 orthogonal to the shaft member 11. The pivot axis C2 is inclined backward in the direction of belt travel with respect to the direction of load on the shaft member 11. With this configuration, when the drive belt 3 deviates to one side, the pulley body 5 is immediately angularly moved so that it is inclined with a level difference with respect to the direction of load on the shaft member 11 and is positioned obliquely relative to the drive belt 3, thereby producing a force of returning the drive belt 3 to its normal position.

Method of manufacturing GaN-based film

The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

TRANSPARENT POLYCRYSTALLINE SPINEL SUBSTRATE AND METHOD OF PRODUCING SAME, AND OPTICAL ARTICLE USING SAID SUBSTRATE

There is provided a transparent polycrystalline spinel substrate characterized in having a transmittance of 0.005% or less in a crossed Nicol system at a thickness of 1 mm and a wavelength of 450 nm, which does not generate image blurring or light-dark change when used in optical products. There is also provided a method for producing the transparent polycrystalline spinel substrate comprising a step for preparing a spinel powder, a step for molding the spinel powder and producing a spinel formed body, a step for sintering the spinel formed body and producing a spinel sintered body, and a step for subjecting the spinel sintered body to hot isostatic pressing (HIP) and producing a spinel polycrystalline body. There is further provided a liquid crystal projector and a receiver for rear-projection television having the aforementioned transparent polycrystalline spinel substrate.

Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×10 19 cm −3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.

Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method

The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×10 5 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH 3 and N 2 .

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5

A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Pois a supply partial pressure of the group-III element oxide gas, and the Peis an equilibrium partial pressure of the group-III element oxide gas.

Ceramic composite material and method of its manufacture

Ceramic composite material that has excellent mechanical properties within a range from room temperature to high temperature and high die release with respect to glass, resins, ceramics, and similar substances. The ceramic composite material is composed of a ceramic phase and a phase containing 2 to 98 wt. % carbon and/or boron nitride as the main component, and that has a mean particle size of 100 nm or less, wherein the thermal expansion coefficient is within a range of 2.0-9.0x10^-6/° C. and the surface roughness after surface polishing is 0.05 mum or less. The sintered body of the material is obtained by sintering a mixture of powdered starting materials at a sintering temperature of 800-1500° C. and a sintering pressure of 200 MPa or higher.

Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device

The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (13), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer (11) as seed crystals for generation and growth of Group III nitride crystals (13); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (13), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially ...

Electroconductive silicon nitride based composite sintered body and method for preparation thereof

A conductive silicon nitride composite sintered body having an average grain size of 100 nm or less and whose relative roughness (Ra) after electric discharge machining is 0.3 mum or less can be obtained by grinding/mixing a silicon nitride powder and a metal powder together until the average particle size of the silicon nitride powder becomes 30 nm or less, and subsequently by molding and sintering. It is preferable that the crushing/mixing is continued until it is apparent that a peak of added metal in an X-ray diffraction pattern has disappeared during the crushing/mixing.

Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method

The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.

Screw rotor type wet vacuum pump

A feed pipe 26 for a sealing water is connected to a housing of the pump to communicate with an enclosed chamber which is defined between a position in which a helical seal line of screw rotors 17 isolates the enclosed chamber from a suction port 15 of the pump and another position in which the enclosed chamber begins to open to a discharge port 24 . Alternatively, a feed pipe for the sealing water is connected to the suction port 15 of the vacuum pump, and the feed pipe 26 is provided with a valve V which opens when the suction pressure of the sealing water becomes lower than −380 mmHg.

Method of manufacturing group-III nitride crystal

There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

Method for manufacturing nitride crystal substrate and substrate for crystal growth

There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth ...

Silicon nitride-based composite sintered body and producing method thereof

The present invention provides a silicon nitride-based sintered body having excellent mechanical properties from room temperature to a medium-low temperature range, a low friction coefficient and excellent wear resistance; a raw material powder for the sintered body; a method of producing the raw material powder; and a method of producing the sintered body. The sintered body of the present invention comprises silicon nitride, titanium compounds and boron nitride, or else silicon nitride, a titanium-based nitride and/or carbide, silicon carbide and graphite and/or carbon; and it has a mean particle diameter of 100 nm or less, and a friction coefficient under lubricant-free conditions of 0.3 or less, or else 0.2 or less. The silicon nitride-based composite powder, which is the raw material of the sintered body comprises primary particles of each of silicon nitride and titanium compounds, containing boron or carbon, each having a mean particle diameter of 20 nm or less, or 30 nm or less, and ...

Silicon nitride based composite sintered product and method for production thereof

The present invention provides a silicon nitride based sintered body having excellent mechanical properties from room temperature to a medium low temperature range, a low friction coefficient and excellent wear resistance. The sintered body comprises silicon nitride, titanium compounds and boron nitride or silicon nitride, titanium based nitride and/or carbide, silicon carbide and graphite and/or carbon; and has a mean particle diameter of 100 nm or less and a friction coefficient under lubricant free conditions of 0.3 or less.

Screw type vacuum pump

A screw vacuum pump which allows reduced power, lower inside gas temperature, and reduced discharging time. The pump has a pair of screw rotors rotatively engaged with each other in a pump casing to discharge a gas along a longitudinal direction of the pump. Each rotor has three types of helical teeth serially located in a longitudinal direction of the rotor and different from each other in theoretical displacement volume. A bypass conduit communicating with a delivery side of the pump is connected via a first check valve to a first intermediate space defined between the first helical teeth and the second helical teeth and via a second check valve to a second intermediate space defined between the second helical teeth and the third helical teeth. The gas is compressed at the third stage to half the first stage volume before a discharge port opens.

Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device

A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

Molded lens and molding tool

A lens is manufactured by hardening soft material filled inside a molding tool by cooling. The lens includes a convex lens portion having an optical axis, and a marking portion located outside of an effective diameter of the lens portion. The shape or the position of the marking portion is set to prevent deformation of the marking portion by contact with the molding tool due to shrinkage of the material during cooling.

Silicon nitride based composite sintered product and method for production thereof

The present invention provides a silicon nitride-based sintered body having excellent mechanical properties from room temperature to a medium-low temperature range, a low friction coefficient and excellent wear resistance; a raw material powder for the sintered body; a method of producing the raw material powder; and a method of producing the sintered body. The sintered body of the present invention comprises silicon nitride, titanium compounds and boron nitride, or else silicon nitride, a titanium-based nitride and/or carbide, silicon carbide and graphite and/or carbon; and it has a mean particle diameter of 100 nm or less, and a friction coefficient under lubricant-free conditions of 0.3 or less, or else 0.2 or less. The silicon nitride-based composite powder, which is the raw material of the sintered body comprises primary particles of each of silicon nitride and titanium compounds, containing boron or carbon, each having a mean particle diameter of 20 nm or less, or 30 nm or less, and ...

Light-Emitting Device Substrate

The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 100 substrate furnished with a transparent substrate 10 that is transparent to light of wavelengths between 400 nm and 600 nm, inclusive, and a nitride-based compound semiconductor thin film 1c formed onto one of the major surfaces of the transparent substrate 10 by a join. Letting the thermal expansion coefficient of the transparent substrate along a direction perpendicular to the major surface of the transparent substrate be 1, and the thermal expansion coefficient of the nitride-based compound semiconductor thin film be 2, then (12)/2 is between 0.5 and 1.0, inclusive, and at up to 1200° C. the transparent substrate does not react with the nitride-based compound semiconductor thin film 1c. The absolute index of refraction of the transparent substrate 10 preferably is between 60% and 140%, inclusive, of the absolute ...

Method and apparatus for growing high quality single crystal

In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.

Optical wavelength conversion element having a cesium-lithium-borate crystal

An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm1 in an infrared transmission spectrum of the optical element is used as an index that indicates a content of water impurities in the crystal and is independent of a polarization direction. An actual measurement of the transmittance Ta is at least 1%, without taking into account loss at an optically polished surface of the crystal. A wavelength conversion device, a ultraviolet laser irradiation apparatus, a laser processing system, and a method of manufacturing an optical wavelength conversion element are also described.

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5

A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device

There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

Method for manufacturing group-III nitride semiconductor crystal substrate

A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm−3 in a crystal near the principal surface over an entire in-plane region thereof.

Method for flattening surface of oxide crystal to ultra high degree

There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa4O(BO3)3 family oxide single crystal thin film using the superflattening method, a ReCa4O(BO3)3 family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level. According to this method, a chemically stable oxide which because of its complexity in both composition and structure is soluble neither with acid nor with alkaline and is insoluble ...

Molded lens and molding tool

A lens is manufactured by hardening soft material filled inside a molding tool by cooling. The lens includes a convex lens portion having an optical axis, and a marking portion located outside of an effective diameter of the lens portion. The shape or the position of the marking portion is set to prevent deformation of the marking portion by contact with the molding tool due to shrinkage of the material during cooling.

Nonlinear optical crystal

There is provided a nonlinear optical crystal which is presented by the formula: K₂Al₂B₂O₇. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of high practical use. There are also provided a wavelength conversion method using this crystal, and an element and a wavelength conversion apparatus for use in the method.

Management system for skin condition measurement analysis information and management method for skin condition measurement analysis information

Service can be offered free of charge and the cost of a skin condition measuring device can be reduced by effectively using data on the occasion of obtaining an analysis result by transmitting measurement data by the skin condition measuring device to a server of a company providing a service of analyzing the measurement data. When a request is made from a contractor client to acquire data registered in a measurement data database, authentication is executed based on a contractor ID input from the contractor client. Additionally, when the measurement data database is searched from a contractor database based on the contractor ID, a search level and an access level are obtained. The contractor client is permitted to search the measurement data database within a range of the search level and the access level.

Conductive silicon nitride composite sintered body and a process for the production thereof

A conductive silicon nitride composite sintered body having an average grain size of 200 nm or less and whose relative roughness (Ra) after electric discharge machining is 0.6 μm or less can be obtained by grinding/mixing a silicon nitride powder and a metal powder together until the average particle size of the silicon nitride powder becomes 30 to 60 nm, and subsequently by molding and sintering. With the contexture that is characteristic of the present invention, it is possible to obtain a conductive silicon nitride composite sintered body having electric conductive particles of 5 to 60 volume percent that is capable of electric discharge machining.

Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby

A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

Process for producing crystalline nucleus and method of screening crystallization conditions

The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10. A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.

Method of manufacturing GaN-based film and composite substrate used therefor

The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Lens unit having glass lens, resin lenses, and reflection preventing film

An improved lens unit can be used in an in-vehicle camera or the like, in a condition where a forefront lens is exposed to the outside for a long time. Here, the resin lens within the lens unit has an improved durability at a high temperature. The lens unit has a plurality of lenses arranged side by side with the optical axes thereof aligned with each other. The lenses include glass lens and resin lens. The lens closest to the object is a glass lens which is closest to the object side and is coated with an ultra-hard film. Resin lenses each have a high temperature resistant reflection preventing film. The lens is a combined lens in which a lens and a lens are bonded together, and is then covered with a high temperature resistant reflection preventing film after bonding.

Ceramic composite material and method for producing same

Highly wear-resistant, low-friction ceramic composites suited for machining-tool, sliding-component, and mold-die materials are made available. The ceramic composites characterized are constituted from a phase having carbon of 3 m or less, preferably 30 nm or less, average crystal-grain size as the principal component, and a ceramic phase (with the proviso that carbon is excluded). The ceramic phase is at least one selected from the group made up of nitrides, carbides, oxides, composite nitrides, composite carbides, composite oxides, carbonitrides, oxynitrides, oxycarbonitrides, and oxycarbides of Al, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ceramic composites are produced by sintering the source-material powders at a sintering temperature of 800 to 1500° C. and a sintering pressure of 200 MPa or greater.

Screw vacuum pump having valve controlled cooling chambers

A discharge side housing 3 has a third cooling water chamber 19 communicating with a first cooling water chamber 7 of a main housing 1 through a cooling water passage 26. The third cooling water chamber 19 is connected to a cooling water outlet pipe 27 which is connected to an inlet port 28 a of a three-way valve 28. The three-way valve 28 has a switching port 28 b which can communicate with a pipe line 29 connected to the first cooling water chamber 7. The three-way valve 28 has an outlet 28 c connected to a pipe line 30 which communicates with a second cooling water chamber 22 of a suction side housing 2. The second cooling water chamber 22 is connected to a cooling water discharge line 31 provided with a flow control valve 32 allowing a back pressure for a cooling water flowing thereinto.

Method of manufacturing group-III nitride crystal

There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

Motor grader

A circle rotator of a motor grader includes a worm, a worm wheel and a shaft. The worm wheel has an inner peripheral portion, an outer peripheral portion enclosing the inner peripheral portion from outside, and a plurality of first clutch discs to be spline-coupled to the inner peripheral surface of the inner peripheral portion. The inner peripheral portion is made of a material harder than a material of which the outer peripheral portion is made.

Method for producing group-III-element nitride single crystals and apparatus used therein

A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

Portable alarm device

A portable alarm device comprises a main body, an operation member and an actuating member. The main body contains an alarm sound emitting unit and a switch for operating the alarm sound emitting unit. The operation member is detached from the main body in an axial direction of the main body, and thereby the switch is closed. A locking member is provided in the main body and is displaceable between a locking position for preventing the detachment of the operation member and an unlocking position for allowing the detachment of the operation member. The actuating member drives the locking member to the unlocking position in accompany with either an action of grasping the main body in a radial direction by hand or an action of relative movement of the operation member and the main body grasped by hand in the axial direction of the main body.

Conductive silicon nitride composite sintered body and a process for the production thereof

A conductive silicon nitride composite sintered body having an average grain size of 200 nm or less and whose relative roughness (Ra) after electric discharge machining is 0.6 mum or less can be obtained by grinding/mixing a silicon nitride powder and a metal powder together until the average particle size of the silicon nitride powder becomes 30 to 60 nm, and subsequently by molding and sintering. With the contexture that is characteristic of the present invention, it is possible to obtain a conductive silicon nitride composite sintered body having electric conductive particles of 5 to 60 volume percent that is capable of electric discharge machining.

Spinel light-transmitting window material and method for producing the same

To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 mum, and the number of pores having a largest diameter of not less than 10 mum is not more than 2.0 per 1 cm3 of the light-transmitting window material, and wherein light scattering factors are further reduced, and a method for producing a spinel light-transmitting window material including the steps of preparing a spinel molded body; a primary sintering step of sintering the spinel molded body at normal pressure or less or in a vacuum at a temperature in the range of 1500 to 1900° C.; and a secondary sintering step of sintering the spinel molded body under pressure at a temperature in the range of 1500 to 2000° C., wherein the relative density of the spinel molded body after the primary sintering step is 95 to 96% and the relative density of the spinel molded body after the secondary sintering step ...

SPINEL SINTERED BODY, PRODUCTION METHOD THEREOF, TRANSPARENT SUBSTRATE, AND LIQUID CRYSTAL PROJECTOR

A spinel sintered body has a composition of MgO·nAl 2 O 3 (1.05≦n≦1.30) containing 20 ppm or less of Si element. A production method thereof includes the steps of: forming a compacted body from a spinel powder containing 50 ppm or less of Si element and having a purity of not less than 99.5 mass %; a first sintering step of forming a sintered body having a density of not less than 95% by sintering the compacted body at 1500° C. to 1700° C. in a vacuum; and a second sintering step of subjecting the sintered body to pressurized sintering at 1600° C. to 1800° C.

Wavelength conversion method, wavelength conversion device, and laser beam machine

In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.

Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby

A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

Silicon nitride-based composite sintered body and producing method thereof

The present invention provides a silicon nitride-based sintered body having excellent mechanical properties from room temperature to a medium-low temperature range, a low friction coefficient and excellent wear resistance; a raw material powder for the sintered body; a method of producing the raw material powder; and a method of producing the sintered body. The sintered body of the present invention comprises silicon nitride, titanium compounds and boron nitride, or else silicon nitride, a titanium-based nitride and/or carbide, silicon carbide and graphite and/or carbon; and it has a mean particle diameter of 100 nm or less, and a friction coefficient under lubricant-free conditions of 0.3 or less, or else 0.2 or less. The silicon nitride-based composite powder, which is the raw material of the sintered body comprises primary particles of each of silicon nitride and titanium compounds, containing boron or carbon, each having a mean particle diameter of 20 nm or less, or 30 nm or less, and ...

Vacuum pump

An object of this invention is to prevent drop of life of a bearing by an axial force when using a pump as a compressor. In a vacuum pump 1 compressing and discharging gas in a direction of a rotor axis by rotation of screw rotors 3, 4 engaged together which are supported rotatably in a casing 2, balance pistons 13, 14 are disposed on shafts 6, 7 of said screw rotors at inlet side of said casing. The balance pistons separate a receiving section 17 at area of the screw rotor and a pressurizing section 16 at area of the balance piston, and a thrust force of the screw rotors at a pressurizing condition is canceled by acting the discharge pressure in the pressurizing section. The pump is used as a compressor when the discharge pressure is acted on the balance pistons 13, 14. When the pump is used as a vacuum pump, air at discharge side is sucked as cool air through a cooler toward a place near to the discharge side of the receiving section 17 at area of the screw rotor.

GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus

A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.

Plant information acquisition system, plant information acquisition device, plant information acquisition method, crop management system and crop management method

Information of plant based on color of a surface of plant is acquired from image data obtained by imaging plant, allowing to acquire information of plant at low cost, compared to chlorophyll meter or spectroscopic analyzer. In crop production like rice plant, fertilization management including fertilizer application management like fertilizer amount determination, or other agricultural works, is supported through a smart phone or the like based on data to be observed, like converted leaf color value is calculated from image data obtained by crop imaging. Camera is connected to smart phone. Converted leaf color value can be obtained from image data obtained by imaging leaf of rice plant by camera. Converted leaf color value is transmitted to management server, for example, amount information of applied fertilizer is required in case where converted leaf color value is less than standard, can be obtained as management information for fertilizer application management.

GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND GaN CRYSTAL PRODUCING APPARATUS

A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.

METHOD OF MANUFACTURING MOLDED ARTICLE FORMED WITH THERMOSETTING RESIN AND INJECTION MOLDING APPARATUS

There is provided a method of manufacturing a molded article formed with a thermosetting resin and an injection molding apparatus so that occurrence of blurs and containing of bubbles at the time of molding can be prevented. Provided is a method of manufacturing a molded article formed with a thermosetting resin by using a mold including: a cavity for molding a product part; a gate which commutes with the cavity to guide a liquid thermosetting resin into the cavity, thereby forming a gate part; a runner which commutes with the gate part to guide the liquid resin into the gate part, thereby forming a runner part; and an overflow catcher which commutes with the cavity to receive the liquid resin overflown from the cavity, thereby forming an overflow part, wherein the method includes: an injecting process of injecting the liquid resin from the runner through the gate to the cavity, until the overflow catcher is filled from the cavity; a hardening process of heating the liquid resin in the mold, thereby hardening the liquid resin; a demolding process of demolding a resin molded article having the runner part, the gate part, the product part, and the overflow part from the mold; and a cutting process of detaching the gate part and the overflow part from the product part of the demolded resin molded article.

Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device

A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)

A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1−k*H(Ts)]/[k*H(Ts)−j*H(Tg)]*j*H(Tg)*t (I), y≥1.58*10 −4 *(22.4/28)S*F(N)/F(T) (II), wherein k represents an arrival rate to a saturated vapor pressure of a group-III element in the raw material chamber, Ts represents a temperature of the raw material chamber, Tg represents a temperature of the nurturing chamber, H(Ts) represents a saturated vapor pressure of the group-III element at the temperature Ts in the raw material chamber, H(Tg) represents a saturated vapor pressure of the group-III element at the temperature Tg in the nurturing chamber, j represents a corrective coefficient, t represents a sum of gas flow amounts flowing into the nurturing chamber from those other than the raw material chamber, S represents a cross-sectional area of the connecting pipe, F(N) represents a volumetric flow amount of the nitrogen element-containing gas supplied into the nurturing chamber, and F(T) represents a sum of volumetric flow amounts of gases supplied into the nurturing chamber from those other than the raw material chamber.

Method for flattening surface of oxide crystal to ultra high degree

There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa₄O(BO₃)₃ family oxide single crystal thin film using the superflattening method, a ReCa₄O(BO₃)₃ family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level. According to this method, a chemically stable oxide which because of its complexity in both composition and structure ...

Process for producing crystalline nucleus and method of screening crystallization conditions

The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10 . A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.

Dry screw vacuum pump having spheroidal graphite cast iron rotors

A dry vacuum pump that includes a casting having an inner cylinder communicating with an inlet and an outlet of the pump, shafts supported by the casting, spiral toothed parts formed on the shaft a plurality of screw rotors each of which includes the shaft and the spiral toothed parts received in the inner cylinder intermeshing with each other. Timing gears each of which are attached to the respective shafts of the screw rotors that intermesh with each other. Locking mechanisms for fixing the timing gears to the shaft. Both of the shaft and the toothed part are made of spheroidal graphite cast iron containing 20 to 30 wt % of nickel are cast integrally.

Polycrystalline ceramic substrate, bonding-layer-including polycrystalline ceramic substrate, and laminated substrate

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<α1/α2<0.9 and relational expression (2) 0.7<α3/α4<0.9 holds, where α1represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and α2represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and α3represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and α4represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.

Drive belt pulley and belt drive system

A hollow cylindrical pulley body 5 is carried rotatably by a hollow cylindrical shaft member 11 . A support rod 8 is inserted in the shaft member 11 , and the shaft member 11 is elastically supported to the support rod 8 through an elastic body 10 . The elastic body 10 is provided within a quarter of the periphery of the support rod 8 that is located, when viewed along the axis of the shaft member 11 , forward of the line of action of a radial shaft load on the shaft member 11 with respect to the direction of rotation of the pulley body 5 . With this configuration, when the drive belt 3 deviates to one side, the pulley body 5 is immediately angularly moved so that it is inclined with a level difference with respect to the direction of the radial shaft load and is positioned obliquely relative to the drive belt 3 . In this manner, a force of compensating for the deviation of the drive belt 3 is produced to avoid its wobbling.

MANUFACTURING METHOD OF III-V COMPOUND CRYSTAL AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step. 1. A manufacturing method of a III-V compound crystal , the manufacturing method comprising:a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate;a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate; anda crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.2. The manufacturing method according to claim 1 ,wherein the part of the portion in contact with the substrate in the III-V compound seed crystal is separated by irradiating the III-V compound seed crystal with a laser beam from a side of the substrate of the seed-crystal-formed substrate in the seed crystal partial separation step.3. The manufacturing method according to claim 1 , further comprising:a contact step of bringing a surface of the III-V compound seed crystal on an opposite side to the substrate into contact with a metallic melt after the seed crystal partial separation step,wherein the group III element and the group V element are reacted in the metallic melt in the crystal growth step.4. The ...

Method for producing semiconductor crystal

The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that ...

Management system for skin condition measurement analysis information and management method for skin condition measurement analysis information

Service can be offered free of charge and the cost of a skin condition measuring device can be reduced by effectively using data on the occasion of obtaining an analysis result by transmitting measurement data by the skin condition measuring device to a server of a company providing a service of analyzing the measurement data. When a request is made from a contractor client to acquire data registered in a measurement data database, authentication is executed based on a contractor ID input from the contractor client. Additionally, when the measurement data database is searched from a contractor database based on the contractor ID, a search level and an access level are obtained. The contractor client is permitted to search the measurement data database within a range of the search level and the access level.

Vacuum pump

An object of this invention is to prevent drop of life of a bearing by an axial force when using a pump as a compressor. In a vacuum pump 1 compressing and discharging gas in a direction of a rotor axis by rotation of screw rotors 3, 4 engaged together which are supported rotatably in a casing 2 , balance pistons 13, 14 are disposed on shafts 6, 7 of said screw rotors at inlet side of said casing. The balance pistons separate a receiving section 17 at area of the screw rotor and a pressurizing section 16 at area of the balance piston, and a thrust force of the screw rotors at a pressurizing condition is canceled by acting the discharge pressure in the pressurizing section. The pump is used as a compressor when the discharge pressure is acted on the balance pistons 13, 14 . When the pump is used as a vacuum pump, air at discharge side is sucked as cool air through a cooler toward a place near to the discharge side of the receiving section 17 at area of the screw rotor.

Production method for group III nitride crystal

A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

PRODUCTION METHOD OF OPTICAL ELEMENT, OPTICAL ELEMENT FORMING MOLD AND OPTICAL ELEMENT

An optical element being high in productivity and capable of ensuring a large bonding area, and a production method of the optical element. At mold opening when a top part (120) provided with a round portion (121) moves upward, a preform is placed in an inner space the interior of which is formed by a rectangular sleeve (110) and the round portion (131) of a bottom part (130). At mold clamping when the top part (120) moves downward, the preform is pressurized. That is, a convex lens portion is transferred by the concave curved surface (122) and the edge surface (123) of the round portion (121) and the concave curved surface (132) and the edge surface (133) of the round portion (131). The four side surfaces of an optical element (1) are transferred by the inner wall surface (110a) of the sleeve (110). Further, part of the preform jumps out into the gap portion (140) between the outer peripheral surfaces (121a, 131a) of the round portions (121, 131) and the inner wall surface (110a) of the ...

Dry vacuum pump

In a dry vacuum pump including: a casing having an inner cylinder (1a) communicating with an inlet (6) and an outlet (7) of the pump; shafts (15b) supported by the casing; spiral toothlike parts (15a) formed on the shaft (15b); a plurality of screw rotors (15), each of which includes the shaft (15b) and the spiral toothlike parts (15a) received in the inner cylinder (1a) intermeshing with each other; timing gears (16, 19), each of which is attached to the respective shafts (15b) of the screw rotors (15) and intermeshes with each other; and locking mechanisms (17), each of which for fixing the timing gear (16, 19) to the shaft (15b), both of the shaft (15b) and the toothlike part (15a) made of spheroidal graphite cast iron containing 20 to 30 wt % of nickel are casted integrally. With the construction described above, a problem such that a degree of vacuum deteriorates due to peeling of a resin coating is solved as to a dry vacuum pump pumping corrosive gas. A tapered face of 1/(20L) is ...

Drive belt pulley and belt drive system

A hollow cylindrical pulley body 5 is carried rotatably by a hollow cylindrical shaft member 11 . A support rod 8 is inserted in the shaft member 11 to support the shaft member 11 for rocking motion about a pivot axis C 2 orthogonal to the shaft member 11 . The pivot axis C 2 is inclined backward in the direction of belt travel with respect to the direction of load on the shaft member 11 . With this configuration, when the drive belt 3 deviates to one side, the pulley body 5 is immediately angularly moved so that it is inclined with a level difference with respect to the direction of load on the shaft member 11 and is positioned obliquely relative to the drive belt 3 , thereby producing a force of returning the drive belt 3 to its normal position.

METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL

A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NOgas, NO gas, and NOgas; and growing the group III nitride crystal on the seed substrate. 1. A method of manufacturing a group III nitride crystal comprising:preparing a seed substrate;generating a group III element oxide gas;supplying the group III element oxide gas;supplying a nitrogen element-containing gas;{'sub': 2', '2', '2', '4, 'supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NOgas, NO gas, and NOgas; and'}growing the group III nitride crystal on the seed substrate.2. The method of manufacturing a group III nitride crystal according to claim 1 , further comprising:reacting the oxidizing gas containing nitrogen element with a group III element droplet.3. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied at a partial pressure of 7.00×10atm or more and 1.75×10atm or less.4. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied at a partial pressure of 7.60×10atm or more and 1.30×10atm or less.5. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied before the seed substrate reaches a substrate maximum achieving temperature.6. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied before the seed substrate reaches the substrate temperature of 1050° C. This ...

LENS UNIT

An improved lens unit can be used in an in-vehicle camera or the like, in a condition where a forefront lens is exposed to the outside for a long time. Here, the resin lens within the lens unit has an improved durability at a high temperature. The lens unit has a plurality of lenses arranged side by side with the optical axes thereof aligned with each other. The lenses include glass lens and resin lens. The lens closest to the object is a glass lens which is closest to the object side and is coated with an ultra-hard film. Resin lenses each have a high temperature resistant reflection preventing film. The lens is a combined lens in which a lens and a lens are bonded together, and is then covered with a high temperature resistant reflection preventing film after bonding. 1. A lens unit in which a plurality of lenses are arranged side by side with optical axes thereof aligned with each other , wherein the lenses include glass lens and resin lens , and a lens closest to an object is a glass lens , while resin lenses accommodated inside a lens barrel , except for the glass lens , are each provided with a high temperature resistant reflection preventing film.2. The lens unit according to claim 1 , wherein the high temperature resistant reflection preventing film of each resin lens has a heat resistance of 125° C. or higher.3. The lens unit according to claim 1 , wherein the high temperature resistant reflection preventing film comprises a plurality of inorganic particles claim 1 , air layers claim 1 , and one of organic compound claim 1 , inorganic compound claim 1 , and inorganic polymer claim 1 ,the inorganic particles have a volume ratio of 5-74% in the high temperature resistant reflection preventing film,the air layers are formed between the inorganic particles adjacent to each other and has a volume ratio of 65% or less,each of the organic compound, inorganic compound, and inorganic polymer is formed by binding together the inorganic particles or the inorganic ...

GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer. 1. A group-III nitride substrate comprising: a base material part of a group-III nitride including a front surface , a back surface , and an inner layer between the front surface and the back surface ,wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.2. The group-III nitride substrate according to claim 1 , wherein the front surface of the base material part is a surface for growing a group-III nitride crystal thereon.3. The group-III nitride substrate according to claim 1 , wherein the oxygen concentration of the front surface of the base material part is lower than the oxygen concentration of the inner layer.4. The group-III nitride substrate according to claim 2 , wherein the front surface of the base material part is a +c surface claim 2 , and wherein the back surface of the base material part is a −c surface.5. The group-III nitride substrate according to claim 1 , wherein the carbon concentration of the front surface of the base material part is 5×10[atoms/cm] or more claim 1 , and wherein{'sup': 20', '3, 'the oxygen concentration of the front surface of the base material part is 1×10[atoms/cm] or more.'}6. The group-III nitride substrate according to claim 5 , wherein the carbon concentration of the front surface of the base material part is within a range of 1.5×10to 5×10[atoms/cm] claim 5 , and wherein{'sup': 20', '21', '3, 'the oxygen concentration of the front surface of the base material part is in the range of 1×10to 1×10[atoms/cm].'}7. The group-III nitride substrate according to claim 1 , wherein the oxygen concentration of the base ...

MOTOR GRADER

A circle rotator of a motor grader includes a worm, a worm wheel and a shaft. The worm wheel has an inner peripheral portion, an outer peripheral portion enclosing the inner peripheral portion from outside, and a plurality of first clutch discs to be spline-coupled to the inner peripheral surface of the inner peripheral portion. The inner peripheral portion is made of a material harder than a material of which the outer peripheral portion is made. 1. A motor grader , comprising:a frame;a drawbar disposed beneath the frame, the drawbar being supported by the frame and configured to pitch up and down;a blade pivoting device supported by the drawbar; anda blade supported by the blade pivoting device,the blade pivoting device including a circle and a circle rotator, the circle supporting the blade and being rotatably attached to the drawbar, the circle rotator being configured to rotary drive the circle,the circle rotator including a worm, a worm wheel and a shaft, the worm wheel being meshed with the worm, the shaft being inserted through the worm wheel,the worm wheel including an inner peripheral portion, an outer peripheral portion, and a plurality of first clutch discs, the inner peripheral portion enclosing the shaft, the outer peripheral portion enclosing the inner peripheral portion from outside and being meshed with the worm, the plurality of first clutch discs being spline-coupled to an inner peripheral surface of the inner peripheral portion,the shaft including a shaft body and a plurality of second clutch discs, the plurality of second clutch discs being spline-coupled to an outer peripheral surface of the shaft body and each being interposed between adjacent first clutch discs of the plurality of first clutch discs, andthe inner peripheral portion made of a material harder than a material of which the outer peripheral portion is made.2. The motor grader according to claim 1 , whereinthe outer peripheral portion has an outer peripheral portion body and a ...

METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE

A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×10cmin a crystal near the principal surface over an entire in-plane region thereof. 1. A method for manufacturing a group III nitride semiconductor crystal substrate , comprising:providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method; andhomoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate,{'sup': 17', '−3, 'wherein the principal surface of the seed crystal substrate is a +c-plane, and wherein the seed crystal substrate has an atomic oxygen concentration of not more than 1×10cmin a crystal near the principal surface over an entire in-plane region thereof.'}2. The method for manufacturing a group m nitride semiconductor crystal substrate according to claim 1 , wherein the group III nitride single crystal grown on the seed crystal substrate by the vapor phase growth method has an atomic oxygen concentration of not more than 1×10cmin the crystal.3. The method for manufacturing a group III nitride semiconductor crystal substrate according to claim 1 , wherein the seed crystal substrate comprises claim 1 , at least on the principal surface claim 1 , a crystalline region grown in a state that a flat growth interface in two-dimensional growth mode is maintained during crystal growth.4. The method for manufacturing a group III nitride semiconductor crystal substrate according to claim 1 , wherein the seed crystal substrate comprises a ...

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (P/P) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Pis a supply partial pressure of the group-III element oxide gas, and the Pis an equilibrium partial pressure of the group-III element oxide gas. 1. A method of manufacturing a group-III nitride crystal comprising:preparing a seed substrate; and{'sup': ['o', 'e'], '#text': 'supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (P/P) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate,'}{'sup': 'o', '#text': 'wherein the Pis a supply partial pressure of the group-III element oxide gas,'}{'sup': 'e', '#text': 'the Pis an equilibrium partial pressure of the group-III element oxide gas such that a first reaction and a second reaction are in equilibrium,'}in the first reaction, the group-III nitride crystal is generated from the group-III element oxide gas and the nitrogen element-containing gas, andin the second reaction, a group-III element gas is generated from decomposition reaction of the group-III element oxidation gas.2. The method of manufacturing a group-III nitride crystal according to claim 1 , wherein in the step of supplying the group-III element oxide gas and the nitrogen element-containing gas claim 1 , the group-III element oxide gas and the nitrogen element-containing gas are supplied from a temperature lower than a substrate temperature of the growing step to introduce a group-III nitride crystal decomposition suppression layer.3. The method of manufacturing a group-III nitride crystal according to claim 1 , wherein in the step of supplying the group-III element oxide gas and the nitrogen element-containing gas claim 1 , the ...

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, AND DEVICE FOR PRODUCING GROUP-III NITRIDE CRYSTAL

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first crystal by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals to produce a first crystal 1. A method for producing a Group III nitride crystal , comprising:a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a seed crystal selection step of selecting a plurality of parts of a preliminarily provided Group III nitride as seed crystals for generation and growth of Group III nitride crystals;', 'a contact step of bringing the surfaces of the seed crystals into contact with an alkali metal melt; and', 'a Group III nitride crystal liquid phase growth step of causing a Group III element and nitrogen to react with each other in a nitrogen-containing atmosphere in the alkali metal melt to generate and grow Group III nitride crystals, wherein, 'a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first Group III nitride crystal by vapor phase epitaxy, the first Group III nitride crystal production process comprisingin the Group III nitride crystal liquid phase growth step, the Group III nitride ...

PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first crystal by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals to produce a first crystal 1. A method for producing a Group III nitride crystal , comprising:a first Group III nitride crystal production process of producing a first Group III nitride crystal by liquid phase epitaxy; and a seed crystal selection step of selecting a plurality of parts of a preliminarily provided Group III nitride as seed crystals for generation and growth of Group III nitride crystals;', 'a contact step of bringing the surfaces of the seed crystals into contact with an alkali metal melt; and', 'a Group III nitride crystal liquid phase growth step of causing a Group III element and nitrogen to react with each other in a nitrogen-containing atmosphere in the alkali metal melt to generate and grow Group III nitride crystals, wherein, 'a second Group III nitride crystal production process of producing a second Group III nitride crystal on the first Group III nitride crystal by vapor phase epitaxy, the first Group III nitride crystal production ...

GROUP-III NITRIDE SUBSTRATE

A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region. 1. A group-III nitride substrate , comprising:a first region having a first impurity concentration in a polished surface; anda second region having a second impurity concentration lower than the first impurity concentration in the polished surface,wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.2. The group-III nitride substrate according to claim 1 , wherein the first region is one of first regions arranged around the second region to surround the second region.3. The group-III nitride substrate according to claim 1 , wherein the first region has a shape having a width that narrows toward the second regions.4. The group-III nitride substrate according to claim 1 , further comprising a third region having a third impurity concentration lower than the second impurity concentration.5. The group-III nitride substrate according to claim 4 , wherein the third region is one of third regions arranged around the second region to surround the second region.6. The group-III nitride substrate according to claim 4 , wherein the first regions and the third regions are alternately arranged circumferentially around the second region.7. The group-III nitride substrate according to claim 1 , wherein an impurity contained in the first region is at least one selected from the group consisting of oxygen and silicon.8. The group-III nitride substrate according to claim 1 , wherein the first impurity concentration is an oxygen concentration of 1×10/cmor more.9. A device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the group-III nitride ...

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR APPARATUS, AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL

The present invention provides a method for producing a Group III nitride crystal that can produce a Group III nitride crystal of high quality with few defects such as crack, dislocation, and the like by vapor phase epitaxy. In order to achieve the above object, the method for producing a Group III nitride crystal of the present invention includes a step of: causing Group III element-containing gas to react with nitrogen-containing gas and to generate a Group III nitride crystal , wherein in the Group III nitride crystal generation step, the reaction is performed in the presence of a carbon-containing substance. 1. A method for producing a Group III nitride crystal , comprising a step of:causing Group III element-containing gas to react with nitrogen-containing gas to generate a Group III nitride crystal, whereinin the Group III nitride crystal generation step, the reaction is performed in the presence of a carbon-containing substance.2. The method according to claim 1 , whereinthe carbon-containing substance is at least one selected from the group consisting of elementary carbon, solid elementary carbon, graphite, carbon nanotube, fullerene, a carbon compound, a solid carbon compound, carbon-containing gas, carbon monoxide (CO) gas, and hydrocarbon gas.3. The method according to claim 1 , further comprising a step of:generating the Group III element-containing gas, whereinthe Group III element-containing gas generation step is a step of causing Group III element oxide to react with reducing gas to generate the Group III element-containing gas.4. The method according to claim 3 , wherein{'sub': 2', '2', '2', '3, 'the reducing gas is at least one selected from the group consisting of Hgas, carbon monoxide (CO) gas, hydrocarbon gas, HS gas, SOgas, and NHgas.'}5. The method according to claim 1 , further comprising a step of:generating the Group III element-containing gas, whereinthe Group III element-containing gas generation step is a step of causing Group III ...

Method of Manufacturing GaN-Based Film and Composite Substrate Used Therefor

The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate () including a support substrate () dissoluble in hydrofluoric acid and a single crystal film () arranged on a side of a main surface () of the support substrate (), a coefficient of thermal expansion in the main surface () of the support substrate () being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film () on a main surface () of the single crystal film () arranged on the side of the main surface () of the support substrate (), and removing the support substrate () by dissolving the support substrate () in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided. 16-. (canceled)7. A method of manufacturing a GaN-based film , comprising the steps of:preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of said support substrate, a coefficient of thermal expansion in the main surface of said support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal;forming a GaN-based film on a main surface of said single crystal film arranged on the side of the main surface of said support substrate; andremoving said support substrate by dissolving the support substrate in hydrofluoric acid.8. The method of manufacturing a GaN-based film according to claim 7 , wherein{'sub': 2', '2, 'said support substrate contains at least any of zirconia and silica and a ZrO—SiOcomposite oxide formed of zirconia and silica.'}9. The method of manufacturing a GaN-based film according to claim 7 , wherein{'sub': 2', '3', '2, 'said support substrate ...

POLYCRYSTALLINE CERAMIC SUBSTRATE, BONDING-LAYER-INCLUDING POLYCRYSTALLINE CERAMIC SUBSTRATE, AND LAMINATED SUBSTRATE

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<α/α<0.9 and relational expression (2) 0.7<α/α<0.9 holds, where αrepresents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and αrepresents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and αrepresents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and αrepresents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C. 1. A polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween , wherein at least one of relational expression (1) and relational expression (2) holds:{'br': None, 'sub': 1', '2, '0.7<α/α<0.9 \u2003\u2003(1)'}{'br': None, 'sub': 3', '4, '0.7<α/α<0.9 \u2003\u2003(2)'}{'sub': 1', '2, 'where αrepresents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and αrepresents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and'}{'sub': 3', '4, 'αrepresents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and αrepresents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.'}2. The polycrystalline ceramic substrate according to claim 1 , wherein the polycrystalline ceramic substrate has a Young's modulus of 200 GPa or more.3. The polycrystalline ceramic substrate according to claim 1 , wherein the bonding layer is formed of an oxide containing silicon.4. The polycrystalline ceramic substrate according to claim 1 , wherein the polycrystalline ceramic substrate is formed of at least one material selected from the group consisting of spinel claim 1 , alumina ...

MANAGEMENT SYSTEM FOR SKIN CONDITION MEASUREMENT ANALYSIS INFORMATION AND MANAGEMENT METHOD FOR SKIN CONDITION MEASUREMENT ANALYSIS INFORMATION

Service can be offered free of charge and the cost of a skin condition measuring device can be reduced by effectively using data on the occasion of obtaining an analysis result by transmitting measurement data by the skin condition measuring device to a server of a company providing a service of analyzing the measurement data. When a request is made from a contractor client to acquire data registered in a measurement data database, authentication is executed based on a contractor ID input from the contractor client. Additionally, when the measurement data database is searched from a contractor database based on the contractor ID, a search level and an access level are obtained. The contractor client is permitted to search the measurement data database within a range of the search level and the access level. 1. A management system for skin condition measurement analysis information , comprising:a skin condition measuring device configured to measure skin condition;a user client used by a user of the skin condition measuring device, connected to the skin condition measuring device so as to be able to transmit and receive data, and also connected to a network to transmit and receive data;a data management server configured to be capable of performing transmission and receipt of data with the user client via the network;an analysis result outputting unit configured to receive analysis result data of the skin condition obtained by analyzing measurement data measured by the skin condition measuring device, output the analysis result data to be displayable on the user client, and also output the analysis result data to be storable in the data management server; anda contractor client configured to perform transmission and receipt of data with the data management server based on a contract to acquire data from the data management server,wherein the user client includes:a user data transmitting unit configured to transmit user data input by the user and also including ...

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FOR CRYSTAL GROWTH

There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth. 1. A method for manufacturing a nitride crystal substrate , comprising:arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other;growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film;growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; andgrowing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.2. The ...

LIQUID-CRYSTAL-DISPLAY PROTECTION PLATE AND METHOD FOR PRODUCING LIQUID-CRYSTAL-DISPLAY PROTECTION PLATE

Provided are a liquid-crystal-display protection plate that has a high strength, is produced at a reduced cost, and has a shape including a curved surface; and a method for producing the liquid-crystal-display protection plate. The liquid-crystal-display protection plate is formed of a spinel sintered body. The spinel sintered body has an average grain size of 10 μm or more and 100 μm or less. The liquid-crystal-display protection plate has a shape including a curved surface. 1: A liquid-crystal-display protection plate formed of a spinel sintered body ,the spinel sintered body having an average grain size of 10 μm or more and 100 μm or less,the liquid-crystal-display protection plate having a shape including a curved surface.2: The liquid-crystal-display protection plate according to claim 1 , wherein the liquid-crystal-display protection plate has a surface roughness Ra of 20 nm or less.3: The liquid-crystal-display protection plate according to claim 1 , wherein the liquid-crystal-display protection plate has a Si element content of 20 ppm or less.4: The liquid-crystal-display protection plate according to claim 1 , wherein the liquid-crystal-display protection plate has claim 1 , with a thickness of 1 mm claim 1 , an average optical transmittance of 85% or more for light of wavelengths of 400 nm to 800 nm.5: A method for producing the liquid-crystal-display protection plate according to claim 1 , the method comprising:a step of preparing an inner mold having an outer peripheral surface including a curved surface, and an outer mold that is elastic and covers the outer peripheral surface of the inner mold with a gap width therebetween;a step of filling a gap formed between the inner mold and the outer mold, with a raw material mixture containing spinel particles;a step of applying pressure to the outer mold to obtain a spinel molded body containing the raw material mixture; anda step of sintering the spinel molded body to obtain a spinel sintered body.6: A method ...

MANAGEMENT SYSTEM FOR SKIN CONDITION MEASUREMENT ANALYSIS INFORMATION AND MANAGEMENT METHOD FOR SKIN CONDITION MEASUREMENT ANALYSIS INFORMATION

Service can be offered free of charge and the cost of a skin condition measuring device can be reduced by effectively using data on the occasion of obtaining an analysis result by transmitting measurement data by the skin condition measuring device to a server of a company providing a service of analyzing the measurement data. When a request is made from a contractor client to acquire data registered in a measurement data database, authentication is executed based on a contractor ID input from the contractor client. Additionally, when the measurement data database is searched from a contractor database based on the contractor ID, a search level and an access level are obtained. The contractor client is permitted to search the measurement data database within a range of the search level and the access level. 1. A management system for skin condition measurement analysis information , comprising:a skin condition measuring device configured to measure skin condition;a user client used by a user of the skin condition measuring device, connected to the skin condition measuring device so as to be able to transmit and receive data, and also connected to a network to transmit and receive data;a data management server configured to be capable of performing transmission and receipt of data with the user client via the network;an analysis result outputting unit configured to receive analysis result data of the skin condition obtained by analyzing measurement data measured by the skin condition measuring device, output the analysis result data to be displayable on the user client, and also output the analysis result data to be storable in the data management server; anda contractor client configured to perform transmission and receipt of data with the data management server based on a contract to acquire data from the data management server,wherein the user client includes:a user data transmitting unit configured to transmit user data input by the user and also including ...

LENS INFORMATION MANAGEMENT SYSTEM FOR SURFACE CONDITION MEASUREMENT AND ANALYSIS AND INFORMATION MANAGEMENT METHOD FOR SURFACE CONDITION MEASUREMENT AND ANALYSIS

Provided are a system and method for surface condition measurement and analysis to effectively utilize image data photographed when a surface as an object is photographed regularly and continuously. When a surface as an object is sequentially photographed as time passes and the photographed image data is sequentially stored, the sequentially stored images are compared and the presence or absence of image regions among the images that nearly coincide with each other is determined. When there are images with image regions that nearly coincide with each other, a coordinate system having one image as a reference is set, and a position of the other image in the coordinate system is determined. When an image with an undetermined position overlaps with an image with a determined position, including images photographed subsequent thereto, the position of the image is determined. 1. An information management system for surface condition measurement and analysis comprising:photographing means that photographs a surface serving as an object to be measured without fixing a photographing position and generates image data;image storage means that stores the image data and a photographing date of the image data; andposition determination means that compares a plurality of the image data stored in the image storage means, and determines relative positions of the plurality of image data in a single coordinate system when the plurality of image data, obtained from a plurality of times of photographing performed at an interval using the photographing means, of which photographing positions on the surface serving as the object to be photographed are deviated are stored in the image storage means, the respective image data of which the relative positions in the coordinate system are determined being capable of being arranged and displayed at the relative positions in the coordinate system in an order of the photographing date.2. The information management system for surface condition ...

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL

The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal. 1. A method of producing a Group III nitride crystal , the method comprising a step of:causing a Group III metal to react with an oxidizing agent and nitrogen-containing gas, thereby producing a Group III nitride crystal.2. The method according to claim 1 , wherein the Group III metal is gallium.3. The method according to claim 1 , wherein the step of producing a Group III nitride crystal comprises steps of:causing the Group III metal to react with the oxidizing agent, thereby generating Group III metal oxidation product gas; andcausing the Group III metal oxidation product gas to react with the nitrogen-containing gas, thereby generating the Group III nitride crystal.4. The method according to claim 3 , where in the step of generating Group III metal oxidation product gas claim 3 , the Group III metal is caused to react with the oxidizing agent in a heated state.5. The method according to claim 3 , wherein the Group III metal oxidation product gas is Group III metal oxide gas.6. The method according to claim 5 , wherein the Group III metal is gallium and the Group III metal oxide gas is GaO gas.7. The method according to claim 1 , wherein the oxidizing agent is an oxygen-containing compound.8. The method according to claim 1 , wherein the oxidizing agent is oxidizing gas.9. The method according to claim 8 , wherein the oxidizing gas is at least one selected from the group consisting of HO gas claim 8 , Ogas claim 8 , COgas claim 8 , and CO gas.10. The method according to claim 8 , wherein the oxidizing gas is HO gas.11. The method ...

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (P/P) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Pis a supply partial pressure of the group-III element oxide gas, and the Pis an equilibrium partial pressure of the group-III element oxide gas. 1. A method of manufacturing a group-III nitride crystal comprising:preparing a seed substrate; and{'sup': 0', 'e, 'supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (P/P) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate,'}{'sup': o', 'e, 'wherein the Pis a supply partial pressure of the group-III element oxide gas, and the Pis an equilibrium partial pressure of the group-III element oxide gas.'}2. The method of manufacturing a group-III nitride crystal according to claim 1 , wherein in the step of supplying the group-III element oxide gas and the nitrogen element-containing gas claim 1 , the group-III element oxide gas and the nitrogen element-containing gas are supplied from a temperature lower than a substrate temperature of the growing step to introduce a group-III nitride crystal decomposition suppression layer.3. The method of manufacturing a group-III nitride crystal according to claim 1 , wherein in the step of supplying the group-III element oxide gas and the nitrogen element-containing gas claim 1 , the supersaturation ratio (P/P) is set to equal to or greater than 1.3 and less than 2.5.4. The method of manufacturing a group-III nitride crystal according to claim 1 , wherein in the step of supplying the group-III element oxide gas and the nitrogen element-containing gas claim 1 , the supersaturation ratio (P/P) is set to equal to or greater than 1.3 and less than 2.5 claim 1 , ...

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal. 1. A method of manufacturing a group-III nitride crystal comprising:a seed crystal preparation step of preparing a plurality of dot-shaped group-Ill nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; anda crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal, a nucleation step of forming crystal nuclei from the plurality of seed crystals;', 'a pyramid growth step of growing a plurality of pyramid-shaped first group-III nitride crystals from the plurality of crystal nuclei; and', 'a lateral growth step of growing second group-Ill nitride crystals so that gaps of the plurality of pyramid-shaped first group-III nitride crystals are filled to form a flattened surface., 'wherein the crystal growth step comprises2. The method of manufacturing a group-III nitride crystal according to claim 1 , wherein the nucleation step is performed at 874° C. or less.3. The method of manufacturing a group-III nitride crystal according to claim 1 , wherein at the nucleation step claim 1 , the plurality of seed crystals are immersed in the melt within 5 minutes to 10 hours.4. The ...

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL AND SEED SUBSTRATE

An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate. 1. A method for producing a group III nitride crystal , the method comprising:seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; andcrystal growth including growing a group III nitride crystal on each of the seed crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen, whereinin the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.2. The method for producing a group III nitride crystal according to claim 1 , wherein claim 1 , in the crystal growth claim 1 , each side of an outer periphery of the hexagonal region is matched up with a specific crystal plane of the group III nitride crystal.3. The method for producing a group III nitride crystal according to claim 2 , wherein the specific crystal plane is a (1-100) plane.4. The method for producing a group III nitride crystal according to claim 1 , wherein claim 1 , among the seed crystals to be disposed in the seed ...

PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL

A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals. 1. A production method for a group III nitride crystal , the production method comprising:preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate; andgrowing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, on the basis of the plurality of seed crystals; and', 'growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals., 'wherein the step of growing a group III nitride crystal comprises2. The production method for a group III nitride crystal according to claim 1 , wherein at the step of growing second group III nitride crystals claim 1 , a plurality of group III nitride crystal layers are formed on an inclined surface of ...

GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×10cmor more, and the concentration of the hydrogen element is 1×10cmor more. 1. A group III nitride crystal ,wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and{'sup': 20', '−3', '19', '−3, 'the concentration of the N-type dopant is 1×10cmor more, and the concentration of the hydrogen element is 1×10cmor more.'}2. The group III nitride crystal according to claim 1 , wherein the concentration of the N-type dopant is 7×10cmor more and 5×10cmor less.3. The group III nitride crystal according to claim 1 , wherein the N-type dopant contains at least one selected from the group consisting of a silicon element claim 1 , a germanium element claim 1 , and an oxygen element.4. The group III nitride crystal according to claim 3 , wherein the N-type dopant contains the oxygen element.5. The group III nitride crystal according to claim 1 , wherein a light having an energy achieving an absorption coefficient of 60 cmor less exists within a range less than a band gap energy value of the group III nitride crystal.6. The group III nitride crystal according to claim 1 , wherein the light having an energy achieving an absorption coefficient of the group III nitride crystal of 60 cmor less exists within a range less than 3.39 eV.7. The group III nitride crystal according to claim 1 , wherein the group III nitride crystal has an electrical resistivity of 1 mΩ·cm or less.8. A group III nitride substrate including the group III nitride crystal according to .9. The group III nitride substrate according to claim 8 , wherein the group III nitride substrate has a thickness of 100 μm or more.10. A method of manufacturing a group III nitride crystal claim 8 , comprising:introducing a group III element-containing gas, a nitrogen element-containing gas, an N-type dopant-containing gas, ...

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FOR CRYSTAL GROWTH

A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth. 1. A method for manufacturing a nitride crystal substrate , comprising:{'sup': '−5', 'a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10Å; and'}a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.2. The method for manufacturing a nitride crystal substrate according to claim 1 , wherein in the first step claim 1 , a substrate in which a difference of a lattice constant between the adjacent seed crystal substrates is within 2×10Å claim 1 , is prepared as the substrate for crystal growth.3. A method for manufacturing a nitride crystal substrate claim 1 , comprising:a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each ...

METHOD FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, GROUP III ELEMENT NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND GROUP III ELEMENT NITRIDE CRYSTAL PRODUCTION DEVICE

To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal on a crystal growth plane of a Group III element nitride seed crystal by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal . The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction. 1. A method for producing a Group III element nitride crystal , the method comprising:a vapor phase growth step of growing a Group III element nitride crystal on a crystal growth plane of a Group III element nitride seed crystal by vapor deposition, whereinthe vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal, or a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and', 'a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal ...

PLANT INFORMATION ACQUISITION SYSTEM, PLANT INFORMATION ACQUISITION DEVICE, PLANT INFORMATION ACQUISITION METHOD, CROP MANAGEMENT SYSTEM AND CROP MANAGEMENT METHOD

Information of plant based on color of a surface of plant is acquired from image data obtained by imaging plant, allowing to acquire information of plant at low cost, compared to chlorophyll meter or spectroscopic analyzer. In crop production like rice plant, fertilization management including fertilizer application management like fertilizer amount determination, or other agricultural works, is supported through a smart phone or the like based on data to be observed, like converted leaf color value is calculated from image data obtained by crop imaging. Camera is connected to smart phone. Converted leaf color value can be obtained from image data obtained by imaging leaf of rice plant by camera. Converted leaf color value is transmitted to management server, for example, amount information of applied fertilizer is required in case where converted leaf color value is less than standard, can be obtained as management information for fertilizer application management. 125-. (canceled)26. A plant information acquisition system comprising:an imaging element;an illumination light source configured to illuminate a plant as an object; an optical system including a lens focusing an image based on a reflected light of the plant illuminated by the illumination light source on the imaging element;a light shielding device configured to shield outside light at the time of performing imaging by using the imaging element;an image processing device configured to acquire color information representing a color of the plant on the basis of an image signal output from the imaging element; anda plant information acquisition device configured to acquire plant information from the color information on the basis of a correlative relationship between the color information and the plant information relevant to the plant which is correlated with the color information.27. The plant information acquisition system according to claim 26 ,wherein the plant information is a numerical value which ...

Schraubenrotor-Nassvakuumpumpe

Schraubenrotor-Naßvakuumpumpe (A), die folgendes umfaßt: ein Gehäuse (11) mit einem Innenzylinder (12a), in dem ein Paar miteinander in Eingriff stehender Schraubenrotoren (17) untergebracht ist, eine Saugöffnung (15) und eine Austrittsöffnung (16), wobei die Schraubenrotoren (17) der Quimby-Art sind und jeweils ein Schraubenprofil mit einem kreisförmigen Bogen und einer quasiarchimedischen Spiralkurve aufweisen, wobei eine Austrittsöffnung (16) geöffnet wird, wenn die Drehung der Schraubenrotoren (17) das Volumen einer geschlossenen Kammer (20) mit einem Verdichtungsverhältnis von ca. 1 : 1,6 verringert, und wobei die geschlossene Kammer durch die Rotoren (17) und das Gehäuse (11) zur Aufnahme eines aus einer Saugöffnung (15) des Gehäuses (11) angesaugten Fluids definiert wird, wobei ein Zufuhrrohr (26) für Sperrwasser mit dem Gehäuse (11) so verbunden ist, daß es mit der geschlossenen Kammer (20) an einer Position unmittelbar bevor die geschlossene Kammer (20) sich zur Austrittsöffnung (16) zu öffnen beginnt, in Verbindung steht, derart, dass ein Unterdruck in der...

Multi-stage screw type vacuum pump

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Surface state imaging display system and surface state imaging display method

【課題】対象となる表面を継続して定期的に撮影した場合に、撮影された画像データを有効に利用可能とするとともに、動画やスライドショーとして表示可能にできる表面状態撮影表示システムおよび表面状態撮影表示方法を提供する。【解決手段】時間経過に対応して対象となる表面が順次撮影されるとともに、撮影された画像データが順次記憶される場合に、順次記憶される画像データの表示画面上の表示位置を決定する。この場合に、複数の画像データを撮影順序順に表示する際に、表示画面上の同じ位置に、複数の画像データに撮影されている表面上の略同じ位置が配置されるように画像データの表示位置を決定する。【選択図】図１０

Method for producing group iii nitride crystal, group iii nitride crystal, semiconductor device and apparatus for producing group iii nitride crystal

The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

Substrate for light-emitting element

The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 100 substrate furnished with a transparent substrate 10 that is transparent to light of wavelengths between 400 nm and 600 nm, inclusive, and a nitride-based compound semiconductor thin film 1 c formed onto one of the major surfaces of the transparent substrate 10 by a join. Letting the thermal expansion coefficient of the transparent substrate along a direction perpendicular to the major surface of the transparent substrate be α 1 , and the thermal expansion coefficient of the nitride-based compound semiconductor thin film be α 2 , then (α 1 - α 2 ) / α 2 is between -0.5 and 1.0, inclusive, and at up to 1200°C the transparent substrate does not react with the nitride-based compound semiconductor thin film 1 c . The absolute index of refraction of the transparent substrate 10 preferably is between 60% and 140%, inclusive, of the absolute index of refraction of the nitride-based compound semiconductor thin film.

Spinel sintered body, method for producing the same, transparent substrate, and liquid crystal projector

The present invention provides a spinel sintered body having a composition of MgO•nAl 2 O 3 (1.05 ≤n ≤1.30) and containing 20 ppm or less of Si element, and a production method thereof, the method comprising a step of forming a compacted body from a spinel powder containing 50 ppm or less of Si element and having a purity of not less than 99.5 mass%, a first sintering step of forming a sintered body having a density of not less than 95% by sintering the compacted body at 1500°C to 1700°C in a vacuum, and a second sintering step of subjecting the sintered body to pressurized sintering at 1600°C to 1800°C.

Iii group nitride crystal and method for preparation thereof, and iii group nitride crystal substrate and semiconductor device

A method for preparing a III Group nitride crystal, which has a step of providing a seed crystal (10) and a step of growing a first III Group nitride crystal (21) on the seed crystal (10) with the liquid phase method, characterized in that in the step of growing a first III Group nitride crystal (21) on the seed crystal (10), the crystal growing rate (VH) in the direction being parallel with the main plane (10h) of the seed crystal (10) is greater than the crystal growing rate (VV) in the direction being vertical to the main plane (10h) of the seed crystal (10). The above method allows the preparation of a III Group nitride crystal having a dislocation density in the plane parallel with the main plane (10h) of the seed crystal (10) being as low as 5 × 106 pieces/cm2 or less.

vacuum pump

Ein Abzugseitegehäuse (3) weist eine dritte Kühlwasserkammer (19) auf, die mit einer ersten Kühlwasserkammer (7) eines Hauptgehäuses (1) durch einen Kühlwasserdurchgang (26) in Verbindung steht. Die dritte Kühlwasserkammer (19) ist mit einem Kühlwasserauslaßrohr (27) verbunden, das an einen Einlaßanschluß (28a) eines Drei-Wegeventils (28) angeschlossen ist. Das Drei-Wege-Ventil (28) hat einen Umschaltanschluß (28b), der mit einer an die erste Kühlwasserkammer (7) angeschlossenen Rohrleitung (29) in Verbindung stehen kann. Das Drei-Wege-Ventil (28) hat einen Auslaß (28c), der an eine Rohrleitung (30), die mit einer zweiten Kühlwasserkammer (22) eines Saugseitegehäuses (2) in Verbindung steht, angeschlossen ist. Die zweite Kühlwasserkammer (22) ist mit einer Kühlwasserausflußleitung (31) verbunden, die mit einem Strombegrenzungsventil (32), das einen Staudruch von hindurchfließenden Kühlwasser erlaubt, versehen ist. A drain side housing (3) has a third cooling water chamber (19) which is connected to a first cooling water chamber (7) of a main housing (1) through a cooling water passage (26). The third cooling water chamber (19) is connected to a cooling water outlet pipe (27) which is connected to an inlet connection (28a) of a three-way valve (28). The three-way valve (28) has a changeover connection (28b) which can be connected to a pipe (29) connected to the first cooling water chamber (7). The three-way valve (28) has an outlet (28c) which is connected to a pipe (30) which is connected to a second cooling water chamber (22) of a suction side housing (2). The second cooling water chamber (22) is connected to a cooling water outflow line (31), which is provided with a flow limiting valve (32), which allows a back pressure of cooling water flowing through it.

Method and apparatus for growing high quality single crystal

A method for growing a single crystal which comprises contacting a seed crystal (4) to a raw material melt (2) in a crucible (1), characterized in that a blade (5) or a baffle plate is provided in the raw material (2) melt in the crucible (1) and the growing of a single crystal is performed by pulling up the seed crystal with rotating the crucible (1). The method can be used for growing various single crystals including CLBO from a highly viscous melt of a raw material (2) as a high quality and high performance crystal.

Method of manufacturing group-III nitride crystal

There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma (8a) is brought into contact with a melt (7) containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate (10) placed in a melt (7) containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt (7) and a surface of the substrate (10) set to be at most 50 mm.

COMBUSTION DEVICE

Iii group nitride crystal and method for preparation thereof, and iii group nitride crystal substrate and semiconductor device

A method of manufacturing a group III-nitride crystal includes the steps of: preparing a seed crystal (10), and growing a first group III-nitride crystal (21) on the seed crystal (10) by liquid phase method; wherein in the step of growing a first group III-nitride crystal (21) on the seed crystal (10), rate of crystal growth V H in a direction parallel to a main surface (10h) of the seed crystal (10) is higher than rate of crystal growth V V in a direction vertical to the main surface (10h) of the seed crystal (10). By the manufacturing method, a group III-nitride crystal is obtained, of which dislocation density of a surface parallel to the main surface (10h) of the seed crystal (10) is as low as at most 5 × 10 6 /cm 2 .

Belt drive pulley and belt drive system

Electrophotographic sensitive body

(57)【要約】 【課題】 所定の機能における基準値若しくは初期値の 設定を行う調整モードを有するカメラにおいて、カメラ を調整する調整の頻度によって調整機材を効率的に備え ることができるようにする。 【解決手段】 外部機器より送信されたコマンド信号を 受信した場合、又はカメラ本体の複数の操作部材に対し て特定な操作が行われた場合の何れにおいても、カメラ を前記調整モードに移行させる制御手段を備えた。

Wavelength conversion method, wavelength conversion device, and laser beam machine

A wavelength conversion method and a wavelength conversion device, capable of generating light, wavelength-converted by non-linear optical crystal, constantly for an extended period, and a laser beam machine using them. The wavelength conversion method performs a wavelength conversion, with an atmosphere in contact with the wave-length-converted light outgoing surface of the non-linear optical crystal turned into a gas smaller in nitrogen content than air. The wavelength conversion device has a means of turning an atmosphere in contact with the wave-length-converted light outgoing surface of the non-linear optical crystal into a gas smaller in nitrogen content than air. The laser beam machine has the above wavelength conversion device.

Method of manufacturing screw pump for conveying liquid

A process for producing a polycrystalline transparent Keramikgutträgers and method for producing a spinel carrier

Verfahren zur Herstellung eines polykristallinen transparenten Keramikträgers, dadurch gekennzeichnet, dass es die folgenden Schritte umfasst: Herstellung eines polykristallinen transparenten Keramik-Sinterkörpers durch Sintern eines Keramikkörpers, der in eine vorherbestimmte Form geformt wurde; Herstellung einer Vielzahl von polykristallinen transparenten Keramik-Schnittkörpern durch Schneiden des polykristallinen transparenten Keramik-Sinterkörpers; Herstellung eines polierten, polykristallinen, transparenten Keramikkörpers durch Polieren einer Schnittfläche des polykristallinen transparenten Keramik-Schnittkörpers; und Herstellung eines beschichteten polykristallinen transparenten Keramikkörpers durch Auftragen einer Antireflexionsbeschichtung auf den polierten, polykristallinen, transparenten Keramikkörper. Process for producing a polycrystalline transparent ceramic support, characterized in that it comprises the following steps: Producing a polycrystalline transparent ceramic sintered body by sintering a ceramic body formed into a predetermined shape; Preparing a plurality of polycrystalline transparent ceramic sectional bodies by cutting the polycrystalline transparent ceramic sintered body; Producing a polished polycrystalline transparent ceramic body by polishing a sectional surface of the polycrystalline transparent ceramic sectional body; and Preparation of a coated polycrystalline transparent ceramic body by applying an antireflection coating to the polished, polycrystalline, transparent ceramic body.

Method for manufacturing semiconductor laminate and method for manufacturing nitride crystal substrate

【課題】結晶品質が良好な半導体積層物または窒化物結晶基板を製造することができる技術を提供する。【解決手段】少なくとも表層がＩＩＩ族窒化物半導体からなり、該表層が洞を含む種結晶基板を用意する工程と、種結晶基板の少なくとも表層のうちの露出部を気相中でエッチングする工程と、種結晶基板上に、ＩＩＩ族窒化物半導体からなる半導体層を気相成長法によりエピタキシャル成長させる工程と、を有し、エッチングする工程では、種結晶基板を用意する工程で種結晶基板の洞内に残留した残留不純物を、種結晶基板の少なくとも表層を構成するＩＩＩ族窒化物半導体とともに除去する。【選択図】図１

Method of manufacturing diamond film and composite substrate used for the same

【課題】主面の面積が大きく反りが小さくクラックの発生が少なく結晶性が良好なダイヤモンド系膜が低コストで得られるダイヤモンド系膜の製造方法およびそれに用いられる複合基板を提供する。 【解決手段】ダイヤモンド系膜の製造方法は、酸に溶解する支持基板１１と、支持基板１１の主面１１ｍ側に接着層１２を介して配置されている単結晶膜１３と、を含み、支持基板１１の主面１１ｍ内の熱膨張係数が、ダイヤモンド結晶の熱膨張係数に比べて、０．８倍より大きく１．２倍より小さい複合基板１０を準備する工程と、支持基板１１の主面１１ｍ側に配置されている単結晶膜１３の主面１３ｍ上にダイヤモンド系膜２０を成膜する工程と、を含む。前記ダイヤモンド系膜を成膜する工程の後に、前記支持基板１１および接着層１２を酸に溶解することにより除去する工程をさらに含む。 【選択図】図２

Patent JPH0217716B2

Silicon nitride sintered body

Wavelength conversion optical element, method for fabricating wavelength conversion optical element, wavelength conversion device, ultraviolet laser irradiator and laser material processing system

　入射強度に応じて出力特性が増加でき、かつ室温で使用可能な波長変換光学素子を提供する。 　本発明の波長変換光学素子は、セシウム・リチウム・ボレート系結晶を含む波長変換光学素子であって、前記結晶中の水不純物の含有量が、前記結晶をＮｄ：ＹＡＧレーザの４倍高調波発生方位の光学素子であって長さ１０ｍｍの光学素子に加工した場合、前記光学素子の赤外透過スペクトルにおける３５８９ｃｍ－１の透過率（Ｔａ）を指標として、偏光方向と無関係であり、かつ光学研磨表面での損失を考慮しない実測値で１％以上であるという含有量であることを特徴とする。

Method and apparatus for growing high quality single crystal

A method for growing a single crystal which comprises contacting a seed crystal (4) to a raw material melt (2) in a crucible (1), characterized in that a blade (5) or a baffle plate is provided in the raw material (2) melt in the crucible (1) and the growing of a single crystal is performed by pulling up the seed crystal with rotating the crucible (1). The method can be used for growing various single crystals including CLBO from a highly viscous melt of a raw material (2) as a high quality and high performance crystal.

Belt drive pulley and belt drive system

Air-cooled vacum pump

Air-cooled, dry vacuum pump

Luftkühlende, trockene Vakuumpumpe mit durch einen Motor, einer Antriebsquelle für eine Drehung, zu drehende Rotoren in einem Gehäuse, welches einen Einlass und einen Auslass für ein Fluid aufweist, wobei das Gehäuse mit Luftzuführmitteln an einem Ende in einer axialen Richtung davon ausgestattet ist und in einem Doppelrohraufbau mit einem inneren Rohr und einem dieses umgebenden äußeren Rohr gebildet ist, und wobei eine Luftleitung, durch welche Kühlluft strömt, wenn sie durch die Luftzuführmittel zugeführt wird, entlang der axialen Richtung zwischen dem inneren Rohr und dem äußeren Rohr angeordnet ist. Air-cooling, dry vacuum pump with by a motor, a drive source for one Rotation, rotors to be rotated in a housing having an inlet and an outlet for having a fluid, the housing having air supply means is equipped at one end in an axial direction thereof and in a twin tube construction with an inner tube and an outer tube surrounding it is formed, and wherein an air line through which cooling air flows when they through the air supply means supplied is, along the axial direction between the inner tube and the outer tube is arranged.

Method for producing group iii nitride single crystal and apparatus used therefor

A method for producing large bulk group III nitride single crystal at high yield is disclosed by which a transparent, high-quality group III nitride crystal with low dislocation density and uniform thickness can be obtained. In the method for producing group III nitride single crystal, a reaction container holding at least one metal element selected from the group consisting of alkali metals and alkaline earth metals and at least one group III element selected from the group consisting of gallium (Ga), aluminum (Al) and indium (In) is heated to form a flux of the metal element, and then a gas containing nitrogen is introduced into the reaction container for having the group III element react with nitrogen in the flux, thereby growing a group III nitride single crystal. In this connection, the group III nitride single crystal is grown while stirring the flux by, for example, shaking/swaying the reaction container.

Silicon nitride sintered body and process for producing the same

A silicon sintered body comprising a matrix phase consisting of silicon nitride and a grain boundary phase in which the silicon nitride consists of 66 to 99% by volume of β-Si₃N₄ and/or β'-sialon with the balance being α-Si₃N₄ and/or α'-sialon, the β-Si₃N₄ and/or β'-sialon consisting of hexagonal rod-like grains having a diameter of 500 nm or less in the minor axis and an aspect ratio 5 to 25, the α-Si₃N₄ and/or α'-sialon consisting of equi-axed grains having an average diameter of 300 nm or less, and titanium compounds are contained within the grains of the matrix phase and in the grain boundary phase. The sintered body is produced by mixing (1) 100 parts by weight of α-Si₃N₄ powder, (2) 0.1 to 10 parts by weight of titanium oxide having an average particle size of 100 nm or less and (3) 2 to 15 parts by weight, in total, of specified sintering aids; molding the resultant powder mixture into a green compact; subjecting the green compact to primary sintering and secondary sintering under the prescribed conditions.

Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device

A method for producing a group III nitride crystal substrate comprising a step for introducing an alkali metal element-containing substance (1), a group III element-containing substance (2) and a nitrogen element-containing substance (3) into a reaction container (51), a step for forming a melt (5) containing at least an alkali metal element, group III element and nitrogen element in the reaction container (51), and a step for growing a group III nitride crystal (6) from the melt (5) is characterized in that the alkali metal element-containing substance (1) is handled within a dry container (100) wherein the moisture concentration is controlled to 1.0 ppm or less at least during the step wherein the alkali metal element-containing substance (1) is introduced into the reaction container (51). Consequently, there can be obtained a group III nitride crystal substrate having a small light absorption coefficient. Also disclosed is a group III nitride semiconductor device.

Wavelength conversion crystal and method for generating laser beam, and apparatus for generating laser beam

Method for preparing single crystal of iii group element nitride and transparent single crystal of iii group element nitride prepared thereby

In an embodiment, gallium, lithium and sodium are placed in a BN crucible and are molten in a nitrogen atmosphere at a temperature of 800°C, under a low pressure as well as 30 atm (ca. 0.3 MPa), and then a single crystal is grown for 96 hours. The resultant gallium nitride single crystal is colorless and transparent with no blackening, exhibits almost no dislocation and has high quality, as shown in a photomicrograph of Fig. 2, and has a maximum diameter of 2 cm or more. An alkali metal other than sodium (except Li and Na) or an alkaline earth metal can be added in place of sodium or in addition to sodium.

Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby

The present invention provides a method for producing aluminum nitride crystals under mild pressure and temperature conditions. In the production method of aluminum nitride crystals, aluminum nitride crystals are formed and grown in the presence of nitrogen-containing gas by allowing aluminum and the nitrogen to react with each other in a flux containing the following component (A) and component (B), or a flux containing the following component (B). (A) At least one element selected from the group consisting of the alkali metal and the alkaline-earth metal. (B) At least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).

Silicon nitride composite substrate

A Si 3 N 4 composite substrate which manifests no generation of cracking on the substrate even by mechanical shock or thermal shock, and is excellent in heat radiation property and heat-cycle-resistance property is obtained by using a Si 3 N 4 substrate as a ceramic substrate. A Si 3 N 4 substrate having a thermal conductivity of 90 W/m • K or more and a three-point flexural strength of 700 MPa or more is used, and the thickness tm of a metal layer connected on one major surface of the substrate and the thickness tc of the Si 3 N 4 substrate are controlled so as to satisfy the relation formula: 2 tm≦tc≦20 tm. When metal layers are connected to both major surfaces of the Si 3 N 4 substrate, the thickness tc and the total thickness ttm of the metal layers on both major surfaces are controlled so as to satisfy the relation formula: ttm≦tc≦10 ttm.

Sealed mechanical booster

(57)【要約】 【課題】 メカニカルブースタの軸封部の信頼性向上と 構造の簡素化を図る。 【解決手段】 メカニカルブースタ本体２に密着し、メ カニカルブースタ本体の軸部４を回転させるモータ３を 備えるメカニカルブースタ１において、モータ３の回転 軸側のステータと外側の固定コイルとの間の隙間に金属 製の円筒板を挿入して、円筒板でステータ側と固定コイ ル側とを隔絶し、モータ３の回転軸の両端側を潤滑剤密 封式のベアリングで支持し、モータカバー３０のベアリ ング嵌合部を円筒板の内側に挿入しつつシールリングで 密封した。円筒板はステンレス製である。モータカバー ３０の外周側に水冷用のジャケットを有する。メカニカ ルブースタ本体２の軸部４を潤滑剤密封式のベアリング で支持した。

Ｉｉｉ族窒化物基板

【課題】高いキャリア濃度を達成しながら、低転位及び低抵抗のＩＩＩ族窒化物基板を提供する。【解決手段】ＩＩＩ族窒化物基板は、研磨された面内において、第１不純物濃度を示す第１領域と、第１不純物濃度よりも低い第２不純物濃度を示す第２領域と、を有し、第１領域の第１転位密度は、第２領域の第２転位密度よりも低い。【選択図】図４

Verfahren zur herstellung von einem gan-kristall und vorrichtung zur herstellung von einem gan- kristall

Ｉｉｉ族窒化物基板

【課題】高いキャリア濃度を達成しながら、低転位及び低抵抗のＩＩＩ族窒化物基板を提供する。【解決手段】ＩＩＩ族窒化物基板は、研磨された面内において、第１不純物濃度を示す第１領域と、第１不純物濃度よりも低い第２不純物濃度を示す第２領域と、を有し、第１領域の第１転位密度は、第２領域の第２転位密度よりも低い。【選択図】図４

Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate

A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “θ”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L1”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M1”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°<θ<90° (1), 0.21≤S/k≤0.35 (2), 1.17≤(L1+M1)/k≤1.55 (3), k=2*(L1+M1)/tan θ+S (4) are satisfied.

Process for producing crystalline nucleus and method of screening crystallization conditions

A process for efficiently and conveniently producing crystals having excellent qualities of a protein or an organic substance. A solution of a protein or an organic substance is prepared and slowly cooled to attain supersaturation at a low degree. Next, this supersaturated solution is irradiated with femtosecond lasers 10. At the focus of the lasers, a topical explosion occurs and thus a crystalline nucleus is formed. Based on this crystalline nucleus, crystals are allowed to develop over a long period of time. Thus, crystals having excellent qualities can be obtained. As the femtosecond lasers, use can be made of titanium:sapphire lasers having a wavelength of 800 nm, a time-width of 120 fs, a frequency of 1 kHz and an output of 400 mW.

Process for producing crystalline nucleus and method of screening crystallization conditions

多結晶ＺｎＳ焼結体およびその製造方法

【課題】赤外線と可視光線の双方について直線透過率が高く、機械的強度が大きい多結晶ＺｎＳ焼結体を安価に提供する。 【解決手段】本発明の多結晶ＺｎＳ焼結体は、平均粒径が０．１μｍ〜１０μｍであり、アルキメデス法による相対密度が９９．０％以上で、平均気孔径が０．１μｍ以下である。また、本発明の多結晶ＺｎＳ焼結体の製造方法は、上記焼結体の製造方法であって、原料粉末の平均粒径が０．１μｍ〜５μｍであり、温度５００℃〜８５０℃において真空中で焼結することを特徴とする。 【選択図】なし

Gesinterter keramischer Verbundkörper und Verfahren zu seiner Herstellung

ＧａＮ系膜の製造方法およびそれに用いられる複合基板

【課題】主面の面積が大きく反りが小さく結晶性が良好なＧａＮ膜が効率よく得られるＧａＮ系膜の製造方法およびそれに用いられる複合基板を提供する。 【解決手段】本ＧａＮ系膜の製造方法は、エッチング溶液に溶解する支持基板１１と、支持基板１１の主面１１ｍ側に配置されている単結晶膜１３と、を含み、支持基板１１の主面１１ｍ内の熱膨張係数が、ＧａＮ結晶の熱膨張係数に比べて、０．８倍より大きく１．２倍より小さい複合基板１０を準備する工程と、支持基板１１の主面１１ｍ側に配置されている単結晶膜１３の主面１３ｍ上にＧａＮ系膜２０を成膜する工程と、支持基板１１を、エッチング溶液に溶解することにより、除去する工程と、を含む。 【選択図】図２

Group iii nitride crystal, group iii nitride substrate, and method of manufacturing group iii nitride crystal

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×10 19 cm −3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.

ポリアスパラギン酸ナトリウムで被覆された無機粉体を含む粉体化粧料及びその製造方法、並びに前記粉体化粧料を含む化粧料組成物

【課題】無機粉体の使用感及び肌密着性を向上しつつ、べたつきを抑えた粉体化粧料を提供すること。【解決手段】無機粉体と、前記無機粉体の表面の一部又は全部を被覆するポリアスパラギン酸ナトリウムとを含み、前記ポリアスパラギン酸ナトリウムの量が前記無機粉体と前記ポリアスパラギン酸ナトリウムとの合計量に対し０．００９５質量％〜０．０７５質量％である、粉体化粧料。【選択図】なし

抗ウイルス性組成物、繊維、及び成形物

【課題】抗ウイルス効果を示す抗ウイルス性組成物を提供する。【解決手段】ジヨードメタン化合物を含有する抗ウイルス性組成物。【選択図】なし

光学ローパスフィルターおよびそれを用いた撮像装置、読取装置

【課題】撮像装置や次世代ＤＶＤ用に、従来の光学ローパスフィルターよりもさらに光学的特性に優れ、軽量かつ安価な光学ローパスフィルターを提供する。 【解決手段】スピネル製の基板と、基板の表面に形成された近赤外線吸収層を有している光学ローパスフィルター。スピネル製の基板と、基板の表面に形成された近赤外線反射層を有している光学ローパスフィルター。スピネル製の基板と、基板の表面に形成された複屈折率付与層を有している光学ローパスフィルター。近赤外線吸収層、近赤外線反射層、複屈折率付与層の少なくとも１層は、波長６００〜１２００ｎｍの光を遮断するコレステリック液晶を用いて形成されている光学ローパスフィルター。前記のいずれかに記載の光学ローパスフィルターを用いた光学素子を備えている撮像装置、読取装置。 【選択図】なし

ＧａＮ系膜の製造方法

【課題】主面の面積が大きく反りの小さいＧａＮ系膜を製造することが可能なＧａＮ系膜の製造方法を提供する。 【解決手段】本ＧａＮ系膜の製造方法は、主面１１ｍ内の熱膨張係数が、ＧａＮ結晶のａ軸方向の熱膨脹係数に比べて、０．８倍より大きく１．２倍より小さい支持基板１１と、支持基板１１の主面１１ｍ側に配置されている単結晶膜１３と、を含み、単結晶膜１３が単結晶膜１３の主面１３ｍに垂直な軸に対して３回対称性を有する複合基板１０を準備する工程と、複合基板１０における単結晶膜１３の主面１３ｍ上にＧａＮ系膜２０を成膜する工程と、を含む。 【選択図】図１

結晶製造方法、準安定形結晶、医薬の製造方法および医薬

【課題】 準安定形結晶を選択的に製造できる結晶製造方法を提供する。 【解決手段】 前記目的を達成するために、本発明の結晶製造方法は、 結晶多形を有する物質の結晶を製造する方法であって、 前記物質の結晶形は、安定形および準安定形を含み、 前記結晶製造方法は、準安定形結晶を選択的に製造する方法であり、 前記物質の溶液を提供する溶液提供工程と、 前記溶液中からの結晶核発生条件を制御し、準安定形の結晶核を選択的に発生させる準安定形結晶核発生工程と、 前記準安定形結晶核から準安定形結晶を成長させる準安定結晶成長工程とを含むことを特徴とする。 【選択図】 なし

Ｉｉｉ族元素窒化物単結晶の製造方法、それに用いる装置および前記製造方法により得られたｉｉｉ族元素窒化物単結晶

【課題】 昇華法における窒化ガリウムの分解が抑制されて製造効率が向上した窒化ガリウム単結晶の製造方法を提供する。 【解決手段】 窒化ガリウム（ＧａＮ）単結晶の原料（ＧａＮ粉末）２を坩堝１に入れて加熱して昇華若しくは蒸発させ、基板３表面で再び温度が下がることで固体に戻ることを利用して基板３表面上において窒化ガリウム単結晶を育成する窒化ガリウム単結晶の製造方法において、加圧下で前記単結晶の育成を行う。加圧条件は、５気圧（５×１．０１３×１０ 5 Ｐａ）以上が好ましい。また、単結晶の育成は、ＮＨ 3 ガスとＮ 2 ガスとの混合ガス雰囲気下で行うことが好ましい。 【選択図】 図１

窒化物半導体基板の製造方法

【課題】窒化物半導体基板の製造において、種基板の主面に窒化物半導体層を結晶成長させる際に、反りが低減された種基板に窒化物半導体層を結晶成長させることによって、結晶軸の配向性の良い良質な窒化物半導体基板を製造する製造方法を提供する。 【解決手段】基板１１の主面に種結晶１２を有する種基板１０を、窒化物半導体層１３の結晶成長に最適な温度まで昇温し、種結晶１２上に窒化物半導体層１３を結晶成長させた後に、窒化物半導体層１３と種基板１０とを剥離して窒化物半導体基板１を製造する製造方法であって、種基板１０の製造時に、予め、昇温によって種基板１０が反る量に相当する反り量を、昇温によって種基板１０が反る方向と逆向きに、種基板１０を反らせておく。 【選択図】図４

ドライ真空ポンプ

(57)【要約】 【課題】 腐食性ガスを吸引するドライ真空ポンプで は、高温のガスに接触する面にコーティングした樹脂被 覆が剥離する問題があった。 【解決手段】 吸入口６と吐出口７に連通する内筒部１ ａを有するケーシングと、該ケーシングに支承される軸 部１５ａに螺旋状の歯形部１５ａが設けられ、歯形部１ ５ａが相互に噛み合った状態で内筒部１ａに収容される スクリューロータ１５と、２つのスクリューロータ１５ の軸部１５ｂに装着され相互に噛み合うタイミングギヤ １６，１９と、タイミングギヤ１６，１９を軸部１５ｂ に固定するロック機構１７を有するドライ真空ポンプに おいて、軸部１５ｂと歯形部１５ａとを、Ｎｉ含有比率 が２０〜３０％の球状黒鉛鋳鉄で一体鋳造した。

抗菌性組成物

【課題】ジヨードメタン化合物を単独で用いる場合に比べて、グラム陽性菌に対して高い抗菌効果を示す抗菌性組成物を提供する。【解決手段】本開示の抗菌性組成物は、ジヨードメタン化合物（Ａ）と、第４級アンモニウム塩（Ｂ）とを含有する。【選択図】なし