Method for manufacturing group-III nitride semiconductor crystal substrate

04-06-2019 дата публикации

Номер:

US10309036B2

Автор: Mamoru Imade, Masashi Yoshimura, Masatomo Shibata, Takehiro Yoshida, Yusuke Mori

Принадлежит: Osaka University NUC, Sumitomo Chemical Co Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

C C3 C30 C30B C30B1 C30B19 C30B19/C30B19/0 C30B19/02 C30B2 C30B25 C30B25/C30B25/2 C30B25/20 C30B29 C30B29/C30B29/4 C30B29/40 C30B29/406 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/020 H01L21/0202 H01L21/02024 H01L21/023 H01L21/0238 H01L21/02389 H01L21/024 H01L21/0242 H01L21/0243 H01L21/02433 H01L21/0245 H01L21/02458 H01L21/025 H01L21/0251 H01L21/02516 H01L21/0254 H01L21/026 H01L21/0260 H01L21/02609 H01L21/0262 H01L21/02625 H01L21/02628 H01L21/0263 H01L21/02634

IPC - классификация

C C3 C30 C30B C30B1 C30B19 C30B19/C30B19/0 C30B19/02 C30B2 C30B25 C30B25/C30B25/2 C30B25/20 C30B29 C30B29/C30B29/4 C30B29/40 C30B29/403

Получить PDF