26-09-2013 дата публикации
Номер: US20130252395A1
Принадлежит:
Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path. 1. A method of manufacturing a resistive random access memory , comprising:forming a lower electrode;forming a resistive layer on the lower electrode;doping the resistive layer with a transition metal using an implantation process; andforming an upper electrode on the resistive layer.2. The method of claim 1 , wherein the lower electrode is formed of a metal or a metal oxide.3. The method of claim 2 , wherein the metal includes at least one element selected from the group consisting of Al claim 2 , Hf claim 2 , Zr claim 2 , Zn claim 2 , W claim 2 , Co claim 2 , Au claim 2 , Pt claim 2 , Ru claim 2 , Ir claim 2 , and Ti.4. The method of claim 1 , wherein the resistive layer is formed of a transition metal oxide.5. The method of claim 4 , wherein the transition metal oxide includes at least one compound selected from the group consisting of NiO claim 4 , TiO claim 4 , HfO claim 4 , ZrO claim 4 , ZnO claim 4 , WO claim 4 , CoO claim 4 , CuO claim 4 , and NbO.6. The method of claim 1 , wherein the transition metal dopant includes at least one element selected from the group consisting of Ni claim 1 , Ti claim 1 , Hf claim 1 , Zr claim 1 , Zn claim 1 , Cu claim 1 , W claim 1 , Co claim 1 , and Nb.7. The method of claim 1 , wherein the transition metal dopant is concentrated in a grain boundary in the resistive layer to form a filament as a current path.8. The method of claim 1 , wherein the resistive layer is formed of NiO at an oxygen partial ...
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