SEMICONDUCTOR WAFER PROCESSING

One embodiment of a method of processing a semiconductor wafer having a peripheral portion includes providing external support structure and restraining radially inward displacement of the wafer peripheral portion with the external support structure. 1. A method of processing a semiconductor wafer having a peripheral portion comprising:providing external support structure; andrestraining radially inward displacement of the peripheral portion with the external support structure.2. The method of wherein said restraining radially inward displacement of the peripheral portion comprises attaching the support structure to the peripheral portion of the wafer.3. The method of wherein attaching the external support structure to the peripheral portion comprises attaching a relatively flexible support sheet to the peripheral portion of the wafer.4. The method of wherein attaching the support structure to the peripheral portion of the wafer further comprises attaching the relatively flexible support sheet to a relatively rigid support frame.5. The method of wherein said attaching a relatively flexible support sheet to the peripheral portion comprises positioning a central opening in the support sheet so that it exposes a central portion of the wafer and attaching a portion of the support sheet positioned radially outwardly of the opening to the support frame.6. The method of wherein said attaching a portion of the support sheet to the support frame comprises attaching the portion of the support sheet positioned radially outwardly of the opening in the support sheet to a portion of the support frame positioned radially outwardly of a central opening in the support frame.7. The method of :wherein the wafer has a front side and an opposite back side, the support sheet has a front side and an opposite back side, the support frame has a front side and an opposite back side and each of the front sides of the wafer, support sheet and support frame face in a first direction;wherein ...

DIE MATRIX EXPANDER WITH PARTITIONED SUBRING

A die matrix expander includes a subring including ≥3 pieces, and a wafer frame supporting a dicing tape having an indentation for receiving pieces of the subring. The subring prior to expansion sits below a level of the wafer frame and has an outer diameter Подробнее

Integrated circuit backside metallization

A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

Laser dicing for singulation

In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

SUBRING FOR SEMICONDUCTOR DIES

A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame. 1. A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter , comprising:a base;an opening extending through the base and having a second diameter at least as large as the first diameter; anda projection extending from the base to ends positioned on opposite sides of the base, the projection being adapted to clamp the tape in an expanded condition to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.2. The subring of claim 1 , wherein the ends of the projection are rounded.3. The subring of claim 1 , wherein the second diameter is larger than the first diameter.4. The subring of comprising discrete sections held together by a cap such that the tape is clamped between the cap and the subring.5. The subring of claim 4 , wherein the cap includes an annular recess for receiving one of the ends of the projection such that the tape is clamped between the cap and the projection.6. The subring of claim 1 , wherein the projection is received in a recess in the frame such that the tape is clamped between the projection and the frame.7. The subring of claim 1 , wherein the opposite ends of the projection are configured to engage the tape.8. The subring of claim 1 , wherein the ends of the projection are formed from metal.9. A system for holding tape connected to semiconductor dies claim 1 , comprising:a frame having opposing first and second surfaces and a passage extending from the first surface to the second ...

METHOD FOR DETECTING CELLS

Disclosed is a method for detecting regulatory dendritic cells, the method comprising step a: detecting the presence or absence of one or more types of molecules on a cell surface in a cell population that comprises regulatory dendritic cells; and step b: identifying regulatory dendritic cells on the basis of the presence or absence of the one or more types of molecules. Also disclosed is a method for producing a cell population enriched for regulatory dendritic cells, the method comprising step 1: detecting the presence or absence of one or more types of molecules on a cell surface in a cell population that comprises regulatory dendritic cells; and step 2: obtaining a cell population enriched for regulatory dendritic cells on the basis of the presence or absence of the one or more types of molecules. Further disclosed is a cell population enriched for regulatory dendritic cells obtained by the method. 1. A method for detecting regulatory dendritic cells , the method comprising:step a: detecting the presence or absence of one or more types of molecules on a cell surface in a cell population that comprises regulatory dendritic cells; andstep b: identifying regulatory dendritic cells on the basis of the presence or absence of the one or more types of molecules.2. The method according to claim 1 , wherein the one or more types of molecules are selected from the group consisting of CD99 claim 1 , CD183 claim 1 , CD107a claim 1 , CD366 claim 1 , CD172a claim 1 , CD200R claim 1 , CD44 claim 1 , CD206 claim 1 , CD181 claim 1 , CD354 claim 1 , CD300c claim 1 , CD50 claim 1 , and CD84.3. The method according to claim 1 , wherein the one or more types of molecules are two or more types of molecules selected from the group consisting of CD99 claim 1 , CD183 claim 1 , CD107a claim 1 , CD366 claim 1 , CD172a claim 1 , CD200R claim 1 , CD44 claim 1 , CD206 claim 1 , CD181 claim 1 , CD354 claim 1 , CD300c claim 1 , CD50 claim 1 , and CD84.4. The method according to any one of to ...

HEMATOPOIETIC PROGENITOR CELL MARKER

Provided is a method for producing a CD4/CD8 double positive cell, including the following steps: 1. A method for producing CD4/CD8 double positive cells , the method comprising the following steps:step 1: separating, from a cell population comprising hematopoietic progenitor cells, cells expressing one or more kinds of molecules selected from the first group consisting of CD24, CD62L, CD90, CD143, CD263, Notch3, CD32, CD39, CD49a, CD164, CD317, CD200, CD218a, CD7, CD144, CD56, CD226, CD262 and CD325, and/or a cell not expressing one or more kinds of molecules selected from the second group consisting of CD49f, CD51, CD102, CD42b, CD61, CD62P, CD69, CD102 and CD156c, andstep 2: differentiating the cell separated in step 1 into CD4/CD8 double positive cells.2. The method according to claim 1 , wherein the cells selected in said step 1 do not express CD235a or CD14 but express CD45 claim 1 , CD34 and CD43.3. The method according to claim 1 , wherein said step 1 comprises separating claim 1 , from a cell population comprising hematopoietic progenitor cells claim 1 , cells expressing one or more kinds of molecules selected from the first group consisting of CD24 claim 1 , CD62L claim 1 , CD90 claim 1 , CD143 claim 1 , CD263 claim 1 , Notch3 claim 1 , CD32 claim 1 , CD39 claim 1 , CD49a claim 1 , CD164 claim 1 , CD317 claim 1 , CD200 claim 1 , CD218a claim 1 , CD7 claim 1 , CD144 claim 1 , CD56 claim 1 , CD226 claim 1 , CD262 and CD325.4. The method according to claim 3 , wherein the first group in said step 1 consists of CD24 claim 3 , CD62L claim 3 , CD90 claim 3 , CD143 claim 3 , CD263 claim 3 , Notch3 claim 3 , CD200 claim 3 , CD218a claim 3 , CD7 and CD144.5. The method according to claim 1 , wherein said step 1 comprises separating claim 1 , from a cell population comprising hematopoietic progenitor cells claim 1 , cells not expressing one or more kinds of molecules selected from the second group consisting of CD49f claim 1 , CD51 claim 1 , CD102 claim 1 , CD42b ...

SUBRING FOR SEMICONDUCTOR DIES

A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame. 1. A method of forming an integrated circuit , comprising the steps of:providing holding tape connected to semiconductor dies;securing the tape to a first surface of a frame having a passage with a first diameter such that the dies are aligned with the passage;inserting sections of a subring through the passage to expand the tape and move the dies through the passage to a position axially spaced from a second surface of the frame opposing the first surface;assembling the sections into the subring such that the expanded tape is clamped between the subring and the frame, the assembled subring having an opening with a second diameter at least as large as the first diameter of the passage;passing a chuck through the opening and the passage to further expand the tape and space the dies a predetermined distance from one another;picking one of the dies from the expanded tape; andelectrically connecting leads to the die.2. The method of claim 1 , further comprising inserting a projection on the assembled subring into a recess in the second surface of the frame to clamp the tape between the projection and the frame.3. The method of claim 1 , further comprising positioning a cap over the projection to hold the sections together and clamp the tape between the projection and the cap.4. The method of claim 1 , wherein the ends of the projection are rounded.5. The method of claim 1 , wherein the second diameter is larger than the first diameter.6. The method of claim 1 , further comprising positioning a cap over the ...

FRONT SIDE LASER-BASED WAFER DICING

A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region. 1. A method of dicing a semiconductor substrate , comprising:positioning the semiconductor substrate on a tape material, wherein the semiconductor substrate has at least a semiconductor surface on its front side including a plurality of semiconductor die having active circuitry that are separated by scribe streets;directing at least one infrared (IR) laser beam that is at a wavelength capable of transmitting through the semiconductor substrate with a point of entry at the scribe streets, wherein the IR laser beam is focused with a focal point embedded within a thickness of the semiconductor substrate;scanning the IR laser beam relative to the semiconductor substrate along intended cutting lines within the scribe streets to form subsurface laser-modified defect regions.2. The method of claim further comprising after the scanning expanding the semiconductor substrate to provide mechanical loading to if not cleaved after the scanning across a thickness of the semiconductor die at the defect regions and to increase a die-to-die gap of the semiconductor die to dice the semiconductor substrate into separate ones of the semiconductor die ,3. The method of claim 1 , further comprising removing metal from the scribe streets before the positioning.4. The method of claim 1 , wherein the tape material is on the front side and the tape material does not reflect or absorb the IR laser beam.5. The method of claim 1 , wherein after the scanning sidewall edges of the semiconductor die have at least one ...

Integrated circuit backside metallization

A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

WAFER PROCESSING

A method of separating dies of a singulated wafer is disclosed. The method may include supporting the singulated wafer on a supporting portion of a sheet of dicing tape that has a first ring attached to a first annular portion of the sheet that encompasses the supporting portion. The method may further include radially expanding the supporting portion by relative axial displacement of the supporting portion with respect to the first ring. The method may also include further expanding the supporting portion by radially outward displacement of a support surface that supports at least an annular portion of the sheet. The method may also include attaching a second ring to a second annular portion of the sheet. 1. A method of separating dies of a singulated wafer comprising:supporting the singulated wafer on a supporting portion of a sheet of dicing tape that has a first ring attached to a first annular portion of the sheet that encompasses the supporting portion;radially expanding the supporting portion by relative axial displacement of the supporting portion with respect to the first ring;further expanding the supporting portion by radially outward displacement of a support surface that supports at least an annular portion of the sheet; andattaching a second ring to a second annular portion of the sheet.2. The method of further comprising making an annular cut in the sheet between the first ring and the second ring.3. The method of wherein said making an annular cut comprises making an annular cut in the sheet proximate to the outer periphery of the second ring.4. The method of wherein said supporting comprises supporting the singulated wafer on a tacky side of the sheet of dicing tape.5. The method of wherein said attaching a first ring comprises attaching the first ring to the tacky side of the dicing tape.6. The method of wherein said attaching a second ring comprises attaching the second ring to the tacky side of the dicing tape.7. The method of wherein said ...

METHOD OF DICING INTEGRATED CIRCUIT WAFERS

A method of dicing an integrated circuit wafer by partially sawing the scribe street from the backside of the wafer and then completing sawing the scribe street from the front side of the wafer. A method of dicing an integrated circuit wafer by backgrinding the wafer prior to partially sawing the scribe street from the backside of the wafer and then completing sawing the scribe street from the front side of the wafer. 119-. (canceled)20. A method for dicing an integrated circuit wafer , comprising:applying a first tape to a first side of the wafer, the first side including integrated circuits;sawing the wafer from an opposite second side of the wafer to a first depth using a first dicing blade with a first thickness;removing the first tape;applying a second tape to the opposite second side; andsawing the wafer from the first side till an end of the first depth using a second dicing blade with a second thickness, wherein the second dicing blade remains at a distance from the second tape during sawing the wafer from the first side.21. The method of claim 20 , wherein the second thickness is less than the first thickness.22. The method of further comprising back grinding the wafer to reduce a thickness of the integrated circuit wafer.23. The method of claim 20 , wherein sawing the wafer from an opposite second side and sawing the wafer from the first side do not saw the first tape and the second tape.24. The method of claim 20 , wherein sawing the wafer from the opposite second side and sawing the wafer from the first side are along scribe streets of the wafer.25. The method of claim 20 , wherein the first tape and the second tape are dicing tapes.26. The method of claim 20 , wherein the first depth is less than a thickness of the wafer.27. The method of claim 26 , wherein the first depth is between 40% and 60% thickness of the wafer.28. The method of claim 20 , wherein a width of the scribe street is at least about 52 μm.29. A method for dicing an integrated circuit ...

METHOD FOR PRODUCING CD4/CD8 DOUBLE-POSITIVE T CELLS

A method for producing CD4/CD8 double-positive T cells, comprising the steps of: (1) culturing pluripotent stem cells in a medium to induce hematopoietic progenitor cells; and (2) culturing the hematopoietic progenitor cells obtained in the step (1) in a medium containing a p38 inhibitor and/or SDF-1 to induce CD4/CD8 double-positive T cells.

造血前駆細胞マーカー

【課題】安定的に細胞治療を提供するため、T細胞系列の細胞をより多く及び/又はより高い濃度で得る方法を提供する。【解決手段】本発明は、次の工程を含む、CD4/CD8ダブルポジティブ細胞を製造する方法を提供する。工程１：造血前駆細胞を含む細胞集団から、CD24、CD62L、CD90、CD143、CD263、Notch3、CD32、CD39、CD49a、CD164、CD317、CD200及びCD218aからなる群より選択される１種以上の分子を発現する細胞を分離する工程、及び工程２：工程１により分離された細胞を、CD4/CD8ダブルポジティブ細胞に分化する工程【選択図】なし

métodos para produzir células duplo-positivas cd4/cd8 e células simples-positivas cd8, população celular, e, reagente para separar células progenitoras hematopoiéticas.

a presente invenção provê um método para produzir células duplo-positivas cd4/cd8, o método compreendendo as etapas a seguir. etapa 1: uma etapa para separar, a partir da população celular contendo células progenitoras hematopoiéticas, células que expressam uma ou mais moléculas selecionadas a partir do grupo que consiste em cd24, cd62l, cd90, cd143, cd263, notch3, cd32, cd39, cd49a, cd164, cd317, cd200 e cd218a; e etapa 2: uma etapa para diferenciar as células separadas na etapa 1 em células duplo-positivas cd4/cd8.

Método para producir células t

Se divulga un método para producir células T reguladoras que comprende la siguiente etapa: (1) Diferenciar células que se pueden diferenciar en células T reguladoras, a las que se introduce un constructo de expresión, en células T reguladoras; el constructo de expresión comprende: (a) Secuencia no codificante conservada (CNS) 1, CNS2, y CNS3 del gen Foxp3; (b) Un promotor; y (c) Un ácido nucleico que codifica FOXP3. También se divulgan células T reguladoras obtenidas según el método, y una composición farmacéutica que comprende las células T reguladoras. Reivindicación 11: Células iPS a las que se introduce un constructo de expresión; el constructo de expresión comprende: (a) CNS1, CNS2, y CNS3 del gen Foxp3; (b) Un promotor; y (c) Un ácido nucleico que codifica FOXP3. Reivindicación 16: Un método para prevenir y/o tratar una respuesta inmune mejorada anormalmente, que comprende la administración de las células T reguladoras según la Reivindicación 13 a un sujeto que las necesite.

Method for producing t cell

Disclosed are: a method for producing a regulatory T cell, wherein the method includes (1) a step for differentiating, into a regulatory T cell, a cell which can be differentiated into a regulatory T cell and into which has been introduced an expression construct that includes (a) a Foxp3 gene conserved non-coding sequence (CNS) 1, CNS2, and CNS3, (b) a promoter, and (c) a nucleic acid encoding FOXP3; a regulatory T cell obtained through the aforementioned method; and a pharmaceutical composition containing the aforementioned regulatory T cell.

Method for producing t cell

Disclosed are: a method for producing a regulatory T cell, wherein the method includes (1) a step for differentiating, into a regulatory T cell, a cell which can be differentiated into a regulatory T cell and into which has been introduced an expression construct that includes (a) a Foxp3 gene conserved non-coding sequence (CNS) 1, CNS2, and CNS3, (b) a promoter, and (c) a nucleic acid encoding FOXP3; a regulatory T cell obtained through the aforementioned method; and a pharmaceutical composition containing the aforementioned regulatory T cell.

T cell progenitor production method

A METHOD FOR PRODUCING iPS CELL -DERIVED NATURAL KILLER CELLS

The present invention provides a method for producing a natural killer cell from an iPS (Induced pluripotent stem) cell, comprising steps of: (i) contacting an iPS cell with a composition comprising a GSK-3 inhibitor and a ROCK inhibitor to obtain an embryoid body, (ii) contacting the embryoid body with a composition comprising a TGFβ receptor inhibitor to obtain a hematopoietic progenitor cell, (iii) culturing the hematopoietic progenitor cell to obtain a lymphocyte progenitor cell, and (iv) differentiating and expanding the lymphocyte progenitor cells to a natural killer cell.

Hematopoietic progenitor cell marker

Provided is a method for producing a CD4/CD8 double positive cell, including the following steps:step 1: separating, from a cell population containing a hematopoietic progenitor cell, a cell expressing one or more kinds of molecules selected from the first group consisting of CD24, CD62L, CD90, CD143, CD263, Notch3, CD32, CD39, CD49a, CD164, CD317, CD200, CD218a, CD7, CD144, CD56, CD226, CD262 and CD325, and/or a cell not expressing one or more kinds of molecules selected from the second group consisting of CD49f, CD51, CD102, CD42b, CD61, CD62P, CD69, CD102 and CD156c, andstep 2: differentiating the cell separated in step 1 into a CD4/CD8 double positive cell.

Hematopoietic progenitor cell marker

Método para producir células t

Se divulga un método para producir células T reguladoras que comprende la siguiente etapa: (1) Diferenciar células que se pueden diferenciar en células T reguladoras, a las que se introduce un constructo de expresión, en células T reguladoras; el constructo de expresión comprende: (a) Secuencia no codificante conservada (CNS) 1, CNS2, y CNS3 del gen Foxp3; (b) Un promotor; y (c) Un ácido nucleico que codifica FOXP3. También se divulgan células T reguladoras obtenidas según el método, y una composición farmacéutica que comprende las células T reguladoras.

Front side laser-based wafer dicing

A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.

Method for producing t cell

Disclosed is a method for producing regulatory T cells, the method comprising:(1) differentiating cells that can differentiate into regulatory T cells, into which an expression construct is introduced, into regulatory T cells, the expression construct comprising:(a) conserved non-coding sequence (CNS) 1, CNS2, and CNS3 of Foxp3 gene;(b) a promoter; and(c) a nucleic acid encoding FOXP3.Also disclosed are regulatory T cells obtained by the method, and a pharmaceutical composition comprising the regulatory T cells.

Metodo para producir celulas t.

Se divulga un método para producir células T reguladoras que comprende la siguiente etapa: (1) Diferenciar células que se pueden diferenciar en células T reguladoras, a las que se introduce un constructo de expresión, en células T reguladoras; el constructo de expresión comprende: (a) Secuencia no codificante conservada (CNS) 1, CNS2, y CNS3 del gen Foxp3; (b) Un promotor; y (c) Un ácido nucleico que codifica FOXP3. También se divulgan células T reguladoras obtenidas según el método, y una composición farmacéutica que comprende las células T reguladoras.