THERMALLY ZONED SUBSTRATE HOLDER ASSEMBLY

A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber). 1. A method for rapid control of a substrate temperature in a processing system during one or more processing steps , said processing system including a thermally zoned substrate holder controlled by a temperature control system configured to manipulate the temperature gradient across said substrate , the method comprising:placing a substrate on a top surface of a substrate holder in said processing system;clamping said substrate to said top surface of said substrate holder;circulating a fluid at a specified temperature through each channel in an array of concentrically arranged channels formed in said substrate holder;applying an electrical signal to each electrical temperature control element in an array of concentrically arranged electrical temperature control elements formed in said substrate holder between said top surface of said substrate holder and said array of concentrically arranged channels;supplying a gas to each annular plenum space in an array of annular plenum spaces formed between adjacent channels in said array of concentrically arranged channels, each annular plenum space also extending between adjacent electrical temperature control elements in said array of concentrically arranged electrical temperature control elements; andintroducing said gas in each annular plenum space of said array of annular spaces through said top surface to the backside of said substrate.2. The method according to claim 1 , wherein said applying an electrical signal comprises one or both of applying a current to a resistive heating element ...

METHOD FOR FORMING A PATTERN AND A SEMICONDUCTOR DEVICE MANUFACTURING METHOD

A method for forming a fine pattern on a substrate includes providing a substrate including a material with an initial pattern formed thereon and having a first line width, performing a self-limiting oxidation and/or nitridation process on a surface of the material and thereby forming an oxide, a nitride, or an oxynitride film on a surface of the initial pattern, and removing the oxide, nitride, or oxynitride film. The method further includes repeating the formation and removal of the oxide, nitride, or oxynitride film to form a second pattern having a second line width that is smaller than the first line width of the initial pattern. The patterned material can contain silicon, a silicon-containing material, a metal, or a metal-nitride, and the self-limiting oxidation process can include exposure to vapor phase ozone, atomic oxygen generated by non-ionizing electromagnetic (EM) radiation, atomic nitrogen generated by ionizing or non-ionizing EM radiation, or a combination thereof. 1. A pattern forming method comprising:providing a substrate including a material with an initial pattern formed thereon and having a first line width;performing a self-limiting oxidation, nitridation, or oxidation and nitridation process on a surface of the material inside a process chamber of a processing apparatus and thereby forming an oxide, nitride, or oxynitride film on a surface of the initial pattern, wherein the self-limiting oxidation, nitridation, or oxidation and nitridation process includes exposing the surface of the material to vapor phase ozone, atomic oxygen generated by non-ionizing electromagnetic (EM) radiation, atomic nitrogen generated by ionizing or non-ionizing EM radiation, or a combination thereof; andremoving the oxide, nitride, or oxynitride film,wherein the pattern forming method is arranged to repeatedly perform formation of the oxide, nitride, or oxynitride film and removal of the oxide, nitride, or oxynitride film so as to form an second pattern having a ...

DRY NON-PLASMA TREATMENT SYSTEM AND METHOD OF USING

A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate. 1. A method of removing material on a substrate , comprising:disposing a substrate on a temperature controlled substrate holder mounted within a temperature controlled process chamber, said temperature controlled process chamber configured to facilitate a non-plasma environment, and said temperature controlled substrate holder configured to support said substrate and configured to control a temperature of said substrate when said substrate is resting on an upper surface of said temperature controlled substrate holder;evacuating said temperature controlled process chamber using a pumping system coupled to said temperature controlled process chamber;chemically treating said substrate using a chemical treatment system coupled to said temperature controlled process chamber by exposing said substrate to a process gas composition selected to chemically alter exposed surface layers on said substrate; andfollowing said chemical treating, thermally treating said substrate using a thermal treatment system, separate from said temperature-controlled substrate holder, coupled to said temperature controlled process chamber by heating said substrate to a temperature sufficient to cause evaporation of said chemically altered surface layers.2. The method of claim 1 , wherein said process gas composition comprises as incipient ingredients HF and optionally ammonia (NH).3. The method of claim 1 , further comprising:prior to said thermally treating said substrate, displacing said ...

DRY NON-PLASMA TREATMENT SYSTEM

A dry non-plasma treatment system for removing material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate. 1. A system for removing material on a substrate , comprising:a process chamber configured to contain a substrate and configured to facilitate a non-plasma environment;a temperature controlled substrate holder mounted within the process chamber, and configured to support the substrate such that a surface of the substrate is oriented to be treated by the non-plasma environment, and configured to control a temperature of the substrate when the substrate is resting on an upper surface of the temperature controlled substrate holder;a vacuum pumping system coupled to the process chamber;a chemical treatment system coupled to the process chamber and configured to introduce a process gas to the process chamber;a thermal treatment system coupled to the process chamber and configured to elevate the temperature of the substrate in the process chamber; anda controller operably coupled to the temperature controlled substrate holder, the chemical treatment system, and the thermal treatment system and configured to control the amount of the process gas introduced to the substrate, and the temperature to which the substrate is set, wherein the controller is programmed to perform the following:chemically treat the substrate within the process chamber using the chemical treatment system by exposing the substrate to a process gas composition selected to chemically alter exposed surface layers on the substrate;set a temperature of the substrate to a substrate temperature less than 100 degrees C. ...

Plasma processing method and apparatus

A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A= {n, τi, ζi, Pi, S; Li} is defined, wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τi is the on-time of the RF power for the ith RF feed line, ζ¿i? is the phase of the i?th¿ RF feed line relative to a select one of the other RF feed lines, P¿i? is the RF power delivered to the electrode through the i?th¿ RF feed line at location L¿i?, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece (176) being processed with a desired amount or degree of process uniformity.

Multi-zone resistance heater

A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.

System and method for using first-principles simulation to control a semiconductor manufacturing process

Method and apparatus for wall film monitoring

A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

Multi-zone resistance heater

A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.

Electrode for plasma processing system

A plasma processing system (110) includes an electrode assembly (150) having a metal drive electrode (154) coupled to the source electrode (152). Source electrode (152) is further provided with an insulating layer (151) on its backside face. The insulating layer (151) is the contact layer between metal drive electrode (154) and source electrode (152). Additionally, source electrode (152) is provided with various front face contours (261, 262, 263, 264). The front face of source electrode (152) is exposed to the reactor chamber 142 of plasma processing system (110) during use. The source electrode is attached to metal drive electrode (154) using fasterners (133) that do not introduce contaminants into the plasma processing chamber.

Apparatus and method for improving microwave coupling to a resonant cavity

Method of adjusting the thickness of an electrode in a plasma processing system

Method of and structure for controlling electrode temperature

A method of and a structure for controlling the temperature of an electrode ( 4 ). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements ( 1 ) are either embedded within the housing of the electrode ( 3 ) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the “first wafer effect” and non-uniform etching of a semiconductor wafer.

Plasma processing system and method

Method of and apparatus for tunable gas injection in a plasma processing system

Multi-zone resistance heater

A dry non-plasma treatment system and method of using

A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemicai treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionaily NH3, under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Method and system for performing atomic layer deposition

A plasma processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the gas injection system to continuously flow a first gas flow to the process chamber and to pulse a second gas flow to the process chamber at a first time. The controller pulses a RF power to the substrate holder at a second time. A method of operating a plasma processing system is provided that includes adjusting a background pressure in a process chamber, where the background pressure is established by flowing a first gas flow using a gas injection system, and igniting a processing plasma in the process chamber. The method includes pulsing a second gas flow using the gas injection system at a first time, and pulsing a RF power to a substrate holder at a second time.

MORE ZONE HEATING RESISTANCE

System and method for using first-principles simulation to analyze a process performed by a semiconductor processing tool

A method, system and computer readable medium for analyzing a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a first principles simulation result; and the first principles simulation result is used to determined a fault in the process performed by the semiconductor processing tool.

Plasma processing apparatus and method of controlling chemistry

A plasma processing apparatus including a processing chamber having an upper surface, a first inlet, and a second inlet. The apparatus includes a wall extending from the upper surface into the processing chamber. The wall encircles the first inlet, and the wall has a base end and a terminal end, where the terminal end includes the second inlet. The apparatus includes a first inductive coil provided within the wall and encircling the first inlet, and a second inductive coil provided within the wall and encircling the second inlet. Additionally, the apparatus includes a first magnet array provided within the base end of the wall adjacent the first inlet, and a second magnet array provided within the terminal end of the wall adjacent the second inlet. A method of controlling plasma chemistry within a plasma processing apparatus is provided that includes the steps of providing a first magnetic field about a first injection region and providing a second magnetic field about a second injection region. The method further includes introducing a first process gas into the first injection region via a first inlet, and introducing a second process gas into the second injection region via a second inlet. The chamber has a wall encircling the first inlet, such that the wall has a terminal end including the second inlet.

Dry non-plasma treatment system and method of using

A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Method and apparatus for wall film monitoring

A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

Directed gas injection apparatus for semiconductor processing

A method and system (1) for utilizing a gas injection plate (20) comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.

Multi-zone resistance heater

A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck ( 102 ), an He gas distribution system ( 122 ), multi-zone heating plates ( 132 ), and multi-zone cooling system ( 152 ). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.

Method and apparatus for monitoring film deposition in a process chamber

Monitoring material buildup on system components by optical emission

A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system

A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

Method and apparatus for atomic layer deposition

A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.

Method and apparatus for monitoring film deposition in a process chamber

Thermally zoned substrate holder assembly

A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

Method and apparatus for determination and control of plasma state

A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma density along a path of the signal within a plasma field. Alternatively, the plasma processing system includes a plasma chamber, a plurality of open resonators provided within the plasma chamber, a plurality of detectors, and a processor. The processor is configured to receive a plurality of mean electron plasma density measurements from the detectors that correspond to locations of the plurality of open resonators.

Method and apparatus for electron density measurement

A plasma processing system including a plasma chamber (120) having a substrate holder (128) and a monitoring system (130). The monitoring system (130) includes a microwave mirror (140) having a concave surface (142) located opposite the holder (128) and a power source (160) is coupled thereto that produces a microwave signal perpendicular to a wafer plane (129) of the holder (128). A detector (170) is coupled to the mirror (140) and measures a vacuum resonance voltage of the signal within the chamber (120). A control system (180) is provided that measures a first voltage during a vacuum condition and a second voltage during a plasma condition and determines an electron density from a difference between the second voltage and the first voltage. The processing system (110) can include a plurality of monitoring systems (130a, 130b, 130c) having mirrors (140a, 140b, 140c) provided in a spatial array located opposite the substrate holder (128). A method of monitoring electron density in the processing system is provided that includes loading a wafer, setting a frequency of a microwave signal to a resonance frequency, and measuring a first voltage of the signal during a vacuum condition. The method further includes processing the wafer (114), measuring a second voltage of the signal during a plasma condition, and determining an electron density from a difference between the second voltage and the first voltage.

Apparatus for chemical vapor deposition control

Dry non-plasma treatment system

A dry non-plasma treatment system for removing material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Apparatus and method for chemical vapor deposition control

化學氣相沉積之控制設備及方法

Apparatus and method for chemical vapor deposition control

A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate. Furthermore, a method of depositing a thin film on a substrate in a deposition system is described.

System and method for on-tool semiconductor simulation

A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool (802). The method includes inputting data relating to a process performed by the semiconductor processing tool (802), inputting a first principles physical model (804) relating to the semiconductor processing tool (802), performing first principles simulation using the input data and the physical model to provide a first principles simulation result. The first principles simulation result is used to build an empirical model (842), and at least one of the first principles simulation result and the empirical model (842) is selected to control the process performed by the semiconductor processing tool (802).

Method and apparatus for electron density measurement

System and method for using first-principles simulation to control a semiconductor manufacturing process

Inductively coupled high-density plasma source

Method and system for monitoring component consumption

Method and system for monitoring component consumption

Automated electrode replacement apparatus for a plasma processing system

A plasma processing system includes an automated electrode retention mechanism (130) for providing automated engagement of a source electrode (152) with a drive electrode (154). In addition, an automated electrode handling system (320) is provided that has the ability to remove a source electrode (152) from the electrode retention mechanism and replace it with a second source electrode (152') that is stored in a staging area (340) outside the plasma processing system vacuum chamber. The system may operate automatically under program control of a computer system (200) coupled thereto.

Apparatus and method for plasma processing

Chemical processing system and method

Shower-head gas injection apparatus with secondary high pressure pulsed gas injection

Monitoring material buildup on system components by optical emission

Automated electrode replacement apparatus for a plasma processing system

A plasma processing system includes an automated electrode retention mechanism (130) for providing automated engagement of a source electrode (152) with a drive electrode (154). In addition, an automated electrode handling system (320) is provided that has the ability to remove a source electrode (152) from the electrode retention mechanism and replace it with a second source electrode (152') that is stored in a staging area (340) outside the plasma processing system vacuum chamber. The system may operate automatically under program control of a computer system (200) coupled thereto.

Chemical processing system and method

Method and system for electron density measurement

The present invention provides a diagnostic system for plasma processing (1), wherein the diagnostic system (1) comprises a multi¬ modal resonator (35), a power source (60), a detector (70), and a controller (80). The controller (80) is coupled ot hte power source (60) and the detector (70), and it is configured to provide a man-machine interface (82) for performing several monitoring and controlling functions associated with the diagnostic system (1) including: a Gunn diode voltage monitor, a Gunn diode current monit a varactor diode voltage monitor, a detector voltage monitor, a varactor voltage control, a varactor voltage sweep control, a resonanc lock-on control, a graphical user control, and an electron density monitor. The diagnostic system (1) can further provide a remote controller (84) coupled to the controller (80) and configured to provide a remote man-machine interface (86). The remote man-mach interface (86) can provide a graphical user interface in order to permint remote control of the diagnostic system (1) by an operator. I addition, the present invention provides several methods of controlling the diagnostic system (1) in order to perform both monitor an control functions.

Method and apparatus for improved electrode plate

Method and system for electron density measurement