СПОСОБ ПОЛУЧЕНИЯ КРЕМНИЯ

Изобретение может быть использовано в химической промышленности. Тетрафторид кремния и фторид натрия выделяют термической диссоциацией кремнефторида натрия при температуре выше 923 К, затем восстанавливают кремний из тетрафторида кремния при контакте с натрием. Выделение и восстановление проводят изолированно от внешней среды и друг от друга. Перед выделением тетрафторида кремния удаляют воду, азот и/или углеводороды вакуумной отгонкой при 923±20 К. Остатки натрия удаляют вакуумной дистилляцией при температуре выше 623 К, но ниже температуры плавления фторида натрия. Изобретение позволяет получать кремний с содержанием примесей менее 10-4 мас. долей. 1 з.п. ф-лы, 4 ил., 1 табл.

СПОСОБ ГЛУБОКОЙ ОЧИСТКИ МОНОСИЛАНА

Изобретение относится к области получения кремнийсодержащих материалов. Способ получения моносилана осуществляют диспропорционированием трихлорсилана. Способ включает контактирование трихлорсилана и смеси хлорсиланов с катализатором в ректификационной колонне. Производят отгонку из смеси тетрахлорида кремния и выделение полученных хлорсиланов с последующим возвратом смеси в ректификационную колонну. Выделение моносилана проводят методом парциальной конденсации. Моносилан с примесями хлорсиланов и частиц катализатора разделяют и очищают методом мембранного газоразделения. Для отделения хлорсиланов разделение ведут на высокопроницаемой по хлорсиланам мембране в режиме противотока, а для очистки от гетерогенных наночастиц катализатора разделение ведут на высокопроницаемой по моносилану мембране в режиме прямотока. Технический результат заключается в снижении материало- и энергоемкости процесса с получением более чистого моносилана. 1 ил., 3 пр.

СПОСОБ ВЫДЕЛЕНИЯ ТЕТРАХЛОРСИЛАНА ИЗ ЕГО СМЕСИ С ГЕКСАХЛОРДИСИЛОКСАНОМ И ГЕКСАХЛОРДИСИЛАНОМ

Способ выделения тетрахлорсилана из его смеси с гексахлордисилоксаном и гексахлордисиланом, включающий фракционное разделение, отличающийся тем, что, с целью повышения выхода продукта, фракционное разделение ведут путем охлаждения смеси до минус 35 - минус 50o C со скоростью 1,5 - 10 град/мин, отделение твердой фазы, ее последующего нагрева до минус 30 - минус 15oC со скоростью 0,5 - 1,5 град/мин и вывода жидкой фазы.

СПОСОБ ПОЛУЧЕНИЯ ГЕКСАХЛОРДИСИЛАНА

Способ получения гексахлордисилана, включающий хлорирование кремнийсодержащего материала, отличающийся тем, что, с целью повышения выхода целевого продукта и удешевления процесса, в качестве кремнийсодержащего материала используют кубовые остатки производства кремния, содержащие полисиланхлориды и четыреххлористый кремний, и процесс ведут при (-10) - (+60)oC при соотношении четыреххлористый кремний : полисиланхлориды : хлор, равном 1 : (0,05 - 10) : (0,03 - 5).

Способ разделения фтористой водорода и фтористого кремния в газовой фазе

СПОСОБ ОЧИСТКИ ТЕТРАХЛОРИДА КРЕМНИЯ

Способ получения четыреххлористого кремния

Способ выделения хлорсиланов из их газовой смеси с водородом и установка для его осуществления

Способ извлечения четыреххлористого кремния из абгазов

Способ получения четыреххлористого кремния и хлористого алюминия

Verfahren zur kontinuierlichen Herstellung von Siliciumchloroform und/oder Siliciumtetrachlorid

Verfahren zur Herstellung von Silicium-tetrachlorid

Verfahren zur Gewinnung reiner Metallchloride

Verfahren zur Gewinnung von Fluorverbindungen aus geringe Mengen Fluor enthaltenden Abgasen

VERFAHREN ZUR HERSTELLUNG VON CHLORSILANEN

METHOD FOR THE PURIFICATION OF TRICHLOROSILANE

... 1,202,402. Trichlorosilane; silicon. TEXAS INSTRUMENTS Inc. 28 July, 1967 [6 Oct., 1966], No. 34824/67. Heading C1A. In the purification of trichlorosilane containing as impurity a thermally unstable phosphorus compound, e.g. diphosphine less volatile than, but decomposable into a compound, e.g. phosphine more volatile than trichlorosilane, liquid trichlorosilane is heated to just below its boiling point (31.8‹ C.), the temperature differential between the heating means and the trichlorosilane being maintained sufficiently small, e.g. 0À5-10%, to prevent decomposition of the impurity, and purified trichlorosilane vapour is removed from the liquid phase. The vapour may then be reduced by H 2 to silicon in a furnace or, alternatively, condensed. A purer product is obtainable by discarding the first 5-25% of condensate, or by removing 5-25% of the trichlorosilane from the top of a distillation column through which it is passed prior to the main purification step. The latter may be effected ...

Improvements in the preparation of silicon tetrachloride

Silicon tetrachloride is prepared by passing chlorine over silicon or an alloy thereof at temperatures not higher than 150 DEG C. in the presence of a catalyst comprising one or more "activated metals" selected from the group consisting of cobalt, copper, nickel, chromium, manganese, iron, silver, titanium, tin, antimony, vanadium and molybdenum. The "activated metals" are produced (i) by reduction of the oxides, hydroxides or nitrates with hydrogen or ammonia, (ii) by decomposing an organic salt such as the oxalate or formate of the metal in an inert or reducing atmosphere, (iii) by reduction of the metal chloride with silicon, (iv) by precipitation from a metal salt solution by the action of another metal such as zinc, cadmium or manganese, or (v) by selective attack of an alloy of the metal, such as the caustic soda attack on a cobalt-tin, cobalt-aluminium or cobalt-silicon alloy. According to examples (i) cobalt chloride was mixed with silicon in a proportion of 1 : 10 by weight and ...

Improvements in or relating to processes for preparing polysilicon oxyhalides

Polymeric silicon oxyhalides are prepared by cracking silicon halides having alkoxy, alkenoxy or aryloxy substituents at a temperature of 500-1000 DEG C. Specified substituents are those containing the radicals methyl, ethyl, n-propyl, isopropyl, n-butyl, iso-butyl, secondary butyl, tertiary butyl, n-amyl, n-hexyl, cyclohexyl, n-octyl, capryl, n-decyl, lauryl, myristyl, cetyl, stearyl, and their corresponding unsaturated radicals, and phenyl and naphthyl. The halides may be chlorides, fluorides, bromides or iodides.

A process for cooling and scrubbing entrained solids from hot gaseous media

... 1,075,755. Removing dust from gases. CABOT CORPORATION. Aug. 19, 1964 [Sept. 5, 1963], No. 33799/64. Heading B1R. In the removal of dust from dust-laden gases composed mainly of a highly superheated vapour of a normally liquid product, the hot gases are introduced at 3 into a vessel 1 to meet an upwardly directed spray of the normally liquid product from a nozzle 5, the amount of liquid sprayed being such that it is completely evaporated into the hot gases and that it agglomerates the dust-particles in the gases. Separated dust is withdrawn at 11 and the cleaned gases leave at 15.

Purification of silicon halides

Boron, titanium, vanadium, iron, and copper contaminants are removed from a silicon halide, e.g. SiCl4, or Si2Cl6, by contacting the halide with a dinitrile NC-R-CN, where R is a divalent aliphatic or aromatic group, and separating the halide from the dinitrile. Dinitriles may be those of malonic, succinic, glutaric, adipic, pimelic, phthalic, isophthalic, or terephthalic acids. The dinitrile and halide may be agitated together and allowed to separate, or the halide may be distilled off. Alternatively, the halide may be distilled through a column of dinitrile absorbed on porous alumina.

Improvements in the production of pure silicon

Silicon tetrachloride containing boron halide is freed therefrom by selectively hydrolysing the boron halide, and fractionally distilling the silicon tetrachloride. A solvent, e.g. diethyl ether or tetrahydrofuran, may be present. Hydrolysis may be effected by dissolving the silicon tetrachloride in a moist solvent by adding water to the silicon tetrachloride or a solution thereof, by placing the silicon tetrachloride or a solution thereof in a wet container, or by passing wet nitrogen over or through the silicon tetrachloride or a solution thereof. Silane may be produced from the silicon tetrachloride as described in Specifications 745,698, and silicon from the silane so produced as described in Specification 745,698.

Improvements in or relating to processes and apparatus for the production of ultra-pure substances

... In the deposition of silicon from a silicon compound, e.g. silicon tetrachloride or trichlorosilane, on to an electrically-heated wire 4 of silicon, the wire 4 is heated by an electric current flowing substantially parallel to the longitudinal axis of the wire and the effect of gravity on the wire is at least partially counter-acted by interaction of the electric current and a magnetic field 5. The electric current and the magnetic field may be adjusted during the process to maintain to a desired extent the supporting force for the wire. Preferably the strength of the magnetic field is increased downwardly by using magnets, the pole faces of which are so shaped that the gap between them decreases in a downward direction (Fig. 2, not shown). The current through the wire may have direct and alternating components, the direct current being used for support of the wire and the alternating current for control of the heating. Alternatively two alternating currents of different ...

Process for the purification of silicon chloroform

Silicon chloroform, obtained by reacting silicon containing 0,08-2,5% by weight of aluminium and gaseous hydrogen chloride, is purified by cooling to 40 DEG -100 DEG C. to precipitate aluminium chloride and other impurities and subsequent separation from residual gases, e.g. by condensation by cooling. A static or fluidized bed of granular silicon containing aluminium is contacted at 210 DEG -330 DEG C. with anhydrous hydrogen chloride, advantageously diluted with a gas inert under the conditions, e.g. argon, nitrogen, or hydrogen. The reaction is preferably carried out at superatmospheric pressure, say 6 atmospheres. Reaction gases so formed are passed directly to a separator, where they are cooled to 40 DEG -100 DEG C., whereby the aluminium trichloride and other impurities separate out. The residual gases contain silicon tetrachloride and hydrogen and are passed to a condenser, where they are cooled to -20 DEG C. to effect condensation and separation of silicon chloroform. Residual gases ...

Method of producing high purity silicon tetrachloride

Silicon tetrachloride is purified by treatment with anhydrous or fuming sulphuric acid, i.e. sulphuric acid containing at least about 81.6% of total sulphur trioxide. Fuming sulphuric acid containing up to 93.5% of total sulphur trioxide may be used. The impure silicon tetrachloride and acid may be continuously passed concurrently or countercurrently through a packed column, or a mixture of the two liquids may be agitated batchwise in an acid-proof vessel. Aluminium, boron, copper, magnesium, titanium, and vanadium impurities are removed in Example 1; copper, arsenic and tri- and penta-valent phosphorus impurities in Example 2; and titanium impurity in Example 3.

A method of producing purified silicon halide

Boron trichloride is removed from silicon tetrachloride by the formation of an addition compound with one or more of the following: cyanogen chloride, propionitrile, cyanamide, nitrobenzene, diamethylaniline, azobenzene, caprolactam, benzaldehyde, methylethylketone, dimethylglyoxime, valerolactone, dioxane, diethylphosphine, triphenylchloromethane, tri, phenylfluoromethane, phosphorus oxychloride-phosphorus trichloride, phosphorus pentachloride, ferric chloride, and aluminium trichloride, The silicon tetrachloride is thereafter distilled. It may be drawn off from the reaction vessel through a quartz tube to the distillation vessel by means of a weak suction pump connected to the distillation vessel. Reaction may be effected at a temperature of -70-50 DEG C., preferably 0-20 DEG C. The resulting silicon tetrachloride may be decomposed to form silicon by high-frequency induction heating optionally in the presence of a gaseous reducing agent, and may be absorbed in an already formed drop of ...

Improvements in or relating to purified silicon bromide and silicon iodide and silicon prepared therefrom

Liquid silicon bromide, or solid, or liquid, silicon iodide is purified by removal of the corresponding boron compounds by reaction with one, or more, liquid, at least partially chlorinated hydrocarbons to convert the boron bromide, or iodide, to boron chloride, and recovery of silicon bromide or iodide by fractional distillation. The silicon bromide, or iodide, is contacted at a temperature of 20 DEG C. to the b. pt. of the silicon bromide, or iodide with the partially chlorinated hydrocarbons, e.g. CHCl3, CCl4, C2Cl4, C2Cl6 C2Cl4F2, C2Cl5F, C2Cl3F3, CCl3F, CCl3Br, or CCl2Br2, which should be completely halogenated, and p have a b.pt. lower than silicon bromide or iodide, in amount in excess of that required by the reaction. The silicon bromide, or iodide may be thermally decomposed with pure H2 in a quartz, or quartz-lined vessel to form pure silicon, which is deposited on a displaceable silicon rod, the tip of which is maintained molten by induction heating. Further, purification of ...

TREATMENT OF CHLORINATION RESIDUE

TREATMENT OF CHLORINATION RESIDUE

DEFLUORINATION OF WET PROCESS PHOSPHORIC ACID

METHOD FOR THE PREPARATION OF TRICHLOROSILANE AND SILICON TETRACHLORIDE

The invention is concerned with a method for the preparation of silicon tetrachloride and trichlorosilane by reaction of silicon or silicon-containing solid materials with hydrogen chloride in the presence of gaseous silicon tetrachloride, at elevated temperature in a fluidized bed. The method of the invention is characterized in that the composition of the reaction products is controlled by operating with 0.2 to 10 parts by volume gaseous silicon tetrachloride per part by volume hydrogen chloride and with a specific reactor crosssectional load of 250 to 2500 kg/m2.h, at a constant temperature between 250 and 500.degree.C; the gaseous reaction products are thereafter drawn off from the reactor and separated.

CHLORINATION OF PROCESSING RESIDUES AS A VARIABLE LOAD FOR GRID SCALE ELECTRICAL LOAD FOLLOWING AND STORAGE

Disclosed are systems and methods having inherent carbon capture and conversion capabilities offering maximum flexibility, efficiency, and economics while simultaneously enabling environmentally and sustainably sound practices. A hybrid thermochemical cycle couples staged reforming with hydrogen production and residue chlorination. The residues of the upgrading are chlorinated, metals of interest are removed and bulk material is re-mineralized. Through the residue chlorination process, various metals including rare earths are concentrated and extracted. Exergy is retained through chemical synthesis such as hydrocarbon and metal and non-metal chloride production. Produced chemicals are later exploited by redox reactions in the operation of an integrated gasification flow battery.

GECL4 AND/OR SICL4 RECOVERY PROCESS FROM OPTICAL FIBERS OR GLASSY RESIDUES AND PROCESS FOR PRODUCING SICL4 FROM SIO2 RICH MATERIALS

A method is provided for producing GeCl4 with or without SiCl4 from optical fibers, the method comprises the steps of: reacting comminuted optical fibers including germanium and optionally silicon oxides with a reagent including a solid carbonaceous reducing agent, chlorine and a boron compound to obtain a gaseous product including gaseous GeCl4, gaseous SiCl4, and gaseous BCl3 in accordance with the reactions: 2BCl3(g) + 1.5GeO2 = 1.5GeCl4(g) + B2O3; 2BCl3(g) + 1.5 SiO2 = 1.5 SiCl4(g) + B2O; B2O3 + 1.5C + 3Cl2 = 2BCl3(g) + 1.5CO2; and then condensing the gaseous GeCl4, BCl3 and optionally SiCl4 into liquid GeCl4, BCl3 and optionally SiCl4. The invention further provides a method for producing SiCl4 (and optionally GeCl4) from glassy residues obtained from optical fiber manufacturing and wasted optical cables. The method includes the steps of: reacting comminuted glassy residues with a reagent including a solid carbonaceous reducing agent, a salt, a boron compound to obtain a gaseous product ...

METHOD OF PRODUCING SILANES FROM SILICON MONOXIDE

SILANE PRODUCTS FROM REACTION OF SILICON MONOXIDE WITH ORGANIC HALIDES The present invention is a process for preparing silanes from the reaction of solid silicon monoxide with organic halides. The solid silicon monoxide is reacted with the organic halide in the presence of a catalyst which can increase the conversion of silicon monoxide to silanes and partially select for the type of silanes produced. The process may employ an activation step in which the solid silicon monoxide is activated by heating in an inert atmosphere. Activation of the silicon monoxide can increase silicon conversion and alter the type of silanes produced.

Verfahren zur Reinigung von flüssigen Metallchloriden.

Verfahren zur Reinigung von flüssigen Metallchloriden.

Verfahren zur Reinigung von flüssigen Metallchloriden.

Corps semi-conducteur du type P et procédé de fabrication de ce corps

Verfahren zur Reinigung von Silicium-IV-chlorid

Verfahren zur Herstellung eines Halbleitereigenschaften aufweisenden chemischen Elementes

Verfahren zur Reinigung von Siliciumchloroform

Verfahren zum Reinigen von Chlorverbindungen des Siliciums oder Germaniums

Verfahren zum Herstellen eines hochreinen Halbleiterstabes

Verfahren zum Herstellen eines hochreinen Siliziumstabes

Verfahren zur Herstellung von reinem Silan

Verfahren zum Reinigen von Siliciumchloroform enthaltenden Reaktionsgasen

Verfahren und Vorrichtung zur Rückgewinnung der unverbrauchten Ausgangsstoffe bei der Herstellung von Reinstsilizium mittels Reduktion von Silanen durch Wasserstoff

Vapour phase deposition on semiconductor

Semi-conductor devices, such as crystal diodes, transistors, fieldistors, photoelectric cells, pyroelectric conductors, varistors and resistances, are produced by depositing semi-conducting chemical elements on a support consisting of at least one element of the semi-conductor materials, by heat-decomposition of at least one gaseous cpd. of the elements in which cpds. the elements are bonded on to more easily volatile, non-contaminating components by contacting the gaseous cpds. with the support heated to the high temp. required for decomposition through the electric current generated and deposition of elements is controlled so that an at least partially alloyed semi-conductor material is formed. - Pref. Si and Ge are pptd. from mixture of SiHCl3 and GeCl4 on Si and Ge support.

Verfahren zur Herstellung von hochreinen Elementen

Verfahren zur Entfernung von selbst- oder leichtentzündlichen Siliciumverbindungen aus Chlorsilangemischen

Verfahren zum Herstellen von kristallischem Silizium für Halbleiteranordnungen

Verfahren zur Gewinnung von Silizium mit vermindertem Phosphorgehalt

Vorrichtung zur Herstellung von hochreinem Halbleitermaterial

Verfahren zur Herstellung von Fluorwasserstoff

Verfahren zur Reinigung einer Silizium-Halogen-Verbindung

Verfahren zum Reinigen von halbleitenden Elementen oder von gasförmigen Halogenverbindungen halbleitender Elemente

Verfahren zur Fluorierung von andere Halogene enthaltenden organischen Verbindungen

Verfahren zur Herstellung von hochreinem Silicium aus Siliciumtetrachlorid

Verfahren zur Herstellung von Metallen der Gruppe 4a des periodischen Systems

Verfahren zum Herstellen eines Halbleitereigenschaften aufweisenden chemischen Elementes in kompakt-kristallinem Zustand

СПОСОБ ИЗВЛЕЧЕНИЯ GeCl4 И/ИЛИ SiCl4 ИЗ ОПТИЧЕСКИХ ВОЛОКОН ИЛИ СТЕКЛЯННЫХ ОТХОДОВ ДЛЯ ПОЛУЧЕНИЯ SiCl4 ИЗ МАТЕРИАЛОВ, СОДЕРЖАЩИХ SiO2

Предложен способ получения GeCl4 с или без SiCl4 из оптических волокон, включающий в себя стадии взаимодействия тонко измельченных оптических волокон, содержащих оксиды германия и, необязательно, оксиды кремния, с реагентом, содержащим твердый углеродсодержащий восстановитель, хлор и соединение бора, с получением газообразного продукта, содержащего газообразный GeCl4, газообразный SiCl4 и газообразный BCl3 в соответствии с реакциями и затем конденсации газообразного GeCl4, BCl3 и, необязательно, SiCl4 с образованием жидкого GeCl4, BCl3 и, необязательно, SiCl4. Изобретение также предлагает способ получения SiCl4 (и необязательно GeCl4) из стеклянных отходов от производства оптических волокон и из отработанных оптических кабелей. Способ включает в себя стадии взаимодействия тонко измельченных стеклянных отходов с реагентом, содержащим твердый углеродсодержащий восстановитель, соль, соединение бора, с получением газообразного продукта, содержащего SiCl4, BCl3 и, необязательно, GeCl4; и затем ...

Fluoride-hexafluorosilicate-tris[bis(dimethylglyoximato)di(thiocarbamide)cobalt (III)] sesquishydrate manifesting biostimulating properties

METHOD OF PROCESSING PHOSPHOGYPSUM AND DEVICE FOR ITS REALIZATION

СПОСІБ ОДЕРЖАННЯ СИЛІЦІЮ, СПОСІБ ВІДОКРЕМЛЕННЯ СИЛІЦІЮ ВІД РОЗПЛАВУ СОЛЕЙ І СПОСІБ ОДЕРЖАННЯ ТЕТРАФЛУОРИДУ СИЛІЦІЮ

Цей винахід стосується технології одержання напівпровідникового силіцію. Згідно винаходу здійснюють електролітичне розкладання насиченого тетрафлуоридом силіцію розплаву евтектики потрійних систем флуоридних солей лужних металів. Для насичення розплаву використовують тетрафлуорид силіцію, отриманий флуоруванням діоксиду силіцію, яке виконують у дві стадії, причому на першій стадії подають із надлишком елементний флуор, на другій стадії - діоксид силіцію. Відокремлення порошку силіцію від розплаву евтектики флуоридних солей здійснюють розчиненням розплаву із частками силіцію безводним флуористим воднем і наступною фільтрацією з виділенням твердої фази у вигляді порошку силіцію.

СПОСІБ ОДЕРЖАННЯ ПОЛІКРИСТАЛІЧНОГО КРЕМНІЮ ПО ЗАМКНУТОМУ ЦИКЛУ

Спосіб одержання полікристалічного кремнію по замкнутому циклу містить стадії синтезу хлорсиланів у реакторі "киплячого шару" часток технічного кремнію, з одержанням парогазової суміші, яка містить переважно трихлорсилан і тетрахлорид кремнію та побічні продукти реакції, диспропорціювання трихлорсилану, одержаного на стадії синтезу хлорсиланів у реакційній колоні, що має зону диспропорціювання, з утворенням моносилану і тетрахлориду кремнію та побічних продуктів реакцій, та відбором тетрахлориду кремнію, розкладу моносилану з утворенням полікристалічного кремнію і водню як побічного продукту реакції у реакторі із рециркуляцією побічних продуктів реакцій кожної із стадій, де парогазову суміш, яку одержано на стадії синтезу хлорсиланів, охолоджують та піддають сухій та мокрій очистці, потім із неї конденсують хлорсилани, які піддають розділенню та очистці у ректифікаційних колонах. Далі здійснюють стадію гідрування тетрахлориду кремнію, одержаного на стадії синтезу хлорсиланів, і тетрахлориду ...

A METHOD FOR PREPARING SILICON TETRAFLUORIDE, A METHOD FOR ISOLATION OF THE SILICON TETRAFLUORIDE FROM OXYGEN AND HIGHLY VOLATILE ADMIXTURES, A METHOD FOR PREPARING SILICON POWDER FROM THE SILICON TETRAFLUORIDE

Fluoride-hexafluorosilicate-tris[bis-(dimethyl-glyoxi-ma-to)di(thio-car-ba-mi-de)cobalt (III)] sesquishydrate manifesting biosti-mulating properties

Process for making silicon tetrachloride

Method for surface-modifying metal silicide, and method and apparatus for preparing trichlorosilane using surface-modified metal silicide

A method of manufacturing a silicon halide purified

Process of production of silicon tetrachloride

Method of preparation of pure silicon halides

Process for the preparation of metalloid and metal chlorides and installations for its implementation

Process of purification of semiconductor substances, for example of silicon, device for its implementation and process of obtaining this device

Process for the thorough purification of composed of silicon organics or minerals

PROCEDE DE PURIFICATION DES ORGANOHALOSILANES

PROCEDE PERMETTANT LA RECUPERATION ET LE RECYCLAGE DES POUDRES RESIDUELLES DES HALOSILANES GAZEUX. IL COMPORTE LES ETAPES SUIVANTES: A.ENVOI D'UN COURANT D'ORGANOHALOSILANES GAZEUX CHARGES DE POUDRE DANS UN RECIPIENT DE FILTRATION 12 CONTENANT UN SYSTEME DE FILTRATION COMPORTANT DES FILTRES 14 EN METAL FRITTE; B.SEPARATION DE LA POUDRE DES ORGANOHALOSILANES GAZEUX EN LES FAISANT PASSER A TRAVERS LES FILTRES 14; C.RECUPERATION DE LA POUDRE EN ARRETANT LE COURANT D'ORGANOHALOSILANES GAZEUX ET EN ENVOYANT UN COURANT DE GAZ A TRAVERS LE FILTRE EN SENS INVERSE DU COURANT D'ORGANOHALISANES GAZEUX. APPLICATION A LA FABRICATION D'ORGANOHALOSILANES.

Method of simultaneous preparation of silica of high purity and acids halohydric

PROCESS FOR THE PRODUCTION OF METAL FREE CHLOROSILANE BY THE CHLORINATION OR HYDROCHLORINATION OF FERROSILICON

REACTION OF FERROSILICON WITH A GASEOUS HALOGENATING AGENT

Process of production of metal chlorides by chlorination of a metalliferous solid product in particles

Method of preparation of hydrides of elements of the fourth and fifth groups of the periodic system

Sophisticated method of preparation of titanium, zirconium and thorium

Method of preparation of purified semiconductor material

Process for the separation of elements and obtaining in a pure state of made up containing these elements

Method of preparation of pure silicon tetrafluoride

Process for obtaining hexachlorodisiloxane starting from its mixture with titanium tetrachloride

APPARATUS AND PROCESS OF ACTIVATED CARBON REGENERATION

METHOD OF PREPARATION OF THE TRICHLOROSILANE AND SILICON TETRACHLORIDE

PROCESS FOR PREPARING SILICON TETRACHLORIDE FROM SILICON CARBIDE WITH HYDROGEN CHLORIDE

PROCESS FOR THE PRODUCTION OF METAL FREE CHLOROSILANE BY THE CHLORINATION OR HYDROCHLORINATION OF FERROSILICON

Process of treatment of composed of silicon, in particular to eliminate letrichlorure from it from phosphorus and the phosphorus pentachloride

PROCESS FOR DECOMPOSING SODIUM FLUOSILICATE AND/OR SODIUM BIFLUORIDE INTO SODIUM FLUORIDE,HYDROGEN FLUORIDE AND SILICON TETRAFLUORIDE

Continuous method of preparation of the silicon silicochloroform and tetrachloride

A preparation method of high purity

PROCESS OF PURIFICACAO OF CLOROSILANOS FOR DESTILLATION

Catalytic hydrodehalogenation of halogen-containing compounds of group IV elements

Catalytic dehalogenation (or hydrodehalogenation) of halogen-containing compounds of elements of group IV of the periodic table in the presence of hydrogen is carried out using a finely-dispersed catalytically active material which comprises silicon and at least one transition metal, and which is characterized by high catalytic activity and stability. This process can be used, for example, for synthesizing compounds or alternatively for decomposing halogen-containing compounds, for instance in waste-water or waste-gas purification processes. It is also suitable for dehalogenation (hydrodehalogenation) of halogen-containing silane compounds, for instance of silicon tetrachloride or alkyl trichlorosilane compounds, and the original purity of the silanes used as starting materials is retained by the products. Tetrachlorosilane, for example, can be converted into trichlorosilane.

Heater and Related Methods Therefor

The invention relates generally to heaters and methods of using the heaters. In certain embodiments, a heater includes a pressure shell having a cylindrical heating cavity, an annular heat shield disposed within the cylindrical heating cavity, and at least one heating element disposed within an interior volume of the annular heat shield. In another embodiment, a method of preparing a trichlorosilane includes introducing a reactant stream comprising silicon tetrachloride into a heater, passing electrical current through a heating element to heat the reactant stream, and introducing the heated reactant stream into a reactor.

Method for producing trichlorosilane with reduced boron compound impurities

The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.

Fluorspar/Iodide process for reduction,purificatioin, and crystallization of silicon

Method and apparatus for producing molten purified crystalline silicon from low-grade siliceous fluorspar ore, sulfur trioxide gas, and a metallic iodide salt. Method involves: (1) initially reacting silicon dioxide-bearing fluorspar ore and sulfur trioxide gas in sulfuric acid to create silicon tetrafluoride gas and fluorogypsum; (2) reacting the product gas with a heated iodide salt to form a fluoride salt and silicon tetraiodide; (3) isolating silicon tetraiodide from impurities and purifying it by washing steps and distillation in a series of distillation columns; (4) heating the silicon tetraiodide to its decomposition temperature in a silicon crystal casting machine, producing pure molten silicon metal ready for crystallization; and pure iodine gas, extracted as liquid in a cold-wall chamber. The system is batch process-based, with continuous elements. The system operates largely at atmospheric pressure, requiring limited inert gas purges during batch changes.

Method and apparatus for manufacturing trichlorosilane

An apparatus 1 for manufacturing trichlorosilane includes a decomposition furnace 2 into which polymers and hydrogen chloride are introduced, the decomposition furnace 2 includes: a heating device 11 which heats an interior of the decomposition furnace 2; a reaction chamber 4 which is formed in the decomposition furnace; a center tube 3 which is inserted in the reaction chamber 4 along a longitudinal direction of the reaction chamber and has a lower-end opening portion 3 a; raw-material-supply pipes 5 and 6 which supplies the polymer and the hydrogen chloride to the reaction chamber 4 at an exterior of the center tube 3; and a gas-discharge pipe 7 which leads out reacted gas from the center tube 3, the apparatus 1 further includes a fin 14 that leads the polymer and the hydrogen chloride to the lower-end opening portion 3 a of the center tube 3 so as to stir the polymer and the hydrogen chloride.

Method for purifying chlorosilane

A method for purifying a crude chlorosilane containing a boron compound, which is characterized by comprising a step wherein a chlorosilane containing a boron compound is brought into contact with an ion-exchange resin, and a step wherein the chlorosilane containing a boron compound is brought into contact with a silica adsorbent. It is preferable that the crude chlorosilane is brought into contact with the ion-exchange resin first, and then brought into contact with the silica adsorbent. In this connection, a silica gel is preferable as the silica absorbent, and a resin having a functional group represented by the following general formula: —CH 2 NR 1 R 2 (wherein R 1 and the like are as defined in the description) is preferable as the ion-exchange resin.

Method and system for producing monosilane

A plant for preparing monosilane (SiH 4 ) by catalytic disproportionation of trichlorosilane (SiHCl 3 ) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.

Process for production of silicon tetrachloride

An aspect of a process for producing silicon tetrachloride comprises chlorinating a silicon-containing substance, preferably a silicon-containing substance that contains a silicic acid biomass, in the presence of a carbon-containing substance that contains ash produced in an industrial process, preferably ash produced in a power-generating facility in which an organic material is combusted and a combustion energy produced is converted into an electric power.

Method for producing trichlorosilane by thermal hydration of tetrachlorosilane

Efficient production of trichorosilane from tetrachlorosilane and hydrogen is effected by reaction at high temperatures over short residence times followed by rapidly cooling the product mixture in a heat exchanger, recovered heat being employed to heat the reactant gases, which are then fed to the reactor in a heated state.

Fouling reduction in hydrochlorosilane production

Embodiments of a method for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient trichlorosilane is included in a silicon tetrachloride process stream to minimize hydrogen chloride formation, thereby inhibiting iron (II) chloride formation and reducing iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof.

Systems for producing silane

Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

METHOD FOR PRODUCING HIGHER HYDRIDOSILANE COMPOUNDS

The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use. 1. A process for preparing a high order hydridosilane compound from a low order hydridosilane compound , the process comprising:thermally reacting a low order hydridosilane compound (I) in the presence of a hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol.2. The process of claim 1 , wherein the low order hydridosilane compound (I) is a linear or branched hydridosilane of formula SiH claim 1 , wherein n is an integer from 3 to 10.3. The process of claim 2 , wherein the low order hydridosilane compound (I) is neopentasilane.4. The process of claim 1 , wherein the hydridosilane compound (II) has a weight average molecular weight in the range of 500-5000.5. The process of claim 1 , wherein the hydridosilane compound (II) is a hydridosilane compound obtained by thermally treating low order hydridosilanes.6310. The process of claim 5 , wherein the hydridosilane compound (II) is a hydridosilane having a weight average molecular weight of at least 500 g/mol and obtained by thermally treating low order hydridosilanes of the formulae SiH claim 5 , (wherein n is an integer from to ; SiH claim 5 , (wherein n is an integer from 3 to 10; and SiH claim 5 , (wherein n is an integer from 6 to 10 claim 5 , respectively.7. The process of claim 1 , wherein the weight fraction of the hydridosilane compound (II) is from 0.01-10% by weight claim 1 , based on the total mass of low order hydridosilane compound (I) and the hydridosilane compound (II).8. The process of claim 1 , which is conducted as liquid phase process.9. The ...

POLYSILANES OF MEDIUM CHAIN LENGTH AND A METHOD FOR THE PRODUCTION OF SAME

Polysilanes of medium chain length as pure compounds or a mixture of compounds, each having at least one direct Si—Si bond, the substituents of the polysilanes consisting exclusively of halogen and/or hydrogen, the medium chain length n thereof being greater than 3 and smaller than 50, and the atomic ratio of substituent:silicon in the composition thereof being at least 1:1. 1. A polysilane of medium chain length as a pure compound or mixture of compounds having at least one direct Si—Si bond in each case , substituents of which consist of halogen and/or hydrogen and a composition of which has an atomic substituent:silicon ratio of at least 1:1 , whereina) the medium chain length is greater than 3 and less than 50,b) said polysilane is soluble in inert solvents,c) said polysilane is suitable as a starting material for silicon deposition,d) said polysilane has oxygen- and chlorine-binding properties, ande) said polysilane decomposes to longer- and shorter-chain products on thermal treatment.2. The polysilane according to claim 1 , having only bands in a range of less than 2400 wavenumbers in IR molecular vibration spectra.3. The polysilane according to claim 1 , having only bands in a range of less than 2300 wavenumbers in Raman molecular vibration spectra.4. The polysilane according to claim 1 , whereina) the halogen is fluorine,{'sup': '29', 'b) significant product signals in Si NMR spectra are within a chemical shift range from 8 ppm to −40 ppm and/or from −45 ppm to −115 ppm, and'}{'sup': −1', '−1', '−1', '−1', '−1', '−1', '−1', '−1', '−1', '−1', '−1', '−1, 'c) Raman intensities are not outside the ranges of 10 cmto 165 cm, 170 cmto 240 cm, 245 cmto 360 cm, 380 cmto 460 cm, and 480 cmto 650 cmand at 900 cmto 980 cm.'}5. The polysilane according to claim 1 , whereina) the halogen is chlorine,{'sup': '29', 'b) significant product signals in Si NMR spectra are within a chemical shift range from 15 ppm to −10 ppm, from −25 ppm to −40 ppm and/or −65 ppm to −96 ppm, ...

APPARATUS AND METHOD FOR THE PRODUCTION OF TRISILYAMINE

There is described an apparatus, a tubular laminar flow, plug flow reactor, for making silylamines and particularly trisilylamine (TSA) in high yields from ammonia gas and a monohalosilane gas. The apparatus can be a tubular flow reactor comprising a first portion of the reactor defining a gas entry zone, a second portion of the reactor defining a reaction zone and a third portion of the reactor defining a separation zone, the reaction zone providing a reactant contacting region. Trisilylamine can be recovered in the separation zone in a cold trap collection vessel. 138-. (canceled)39. A process for preparing silylamines in a tubular laminar flow plug flow gas reactor , comprising: (a) directing a flow of a first reactant gas into a reaction zone region of a tube reactor; (b) passing a second reactant gas through a conduit into the reaction zone region of the tube reactor containing the first reactant gas thereby forming a laminar flow plug flow reaction stream wherein the first reactant gas and the second reactant gas react to form silylamines; (c) passing the reaction stream containing silylamines into a collection zone of the flow tube reactor; (d) separating the silylamines from the reaction stream; and wherein the reactor is maintained at a pressure of one atmosphere or less.40. The process of wherein the silylamines separated from the reaction stream are stored to complete the conversion to trisilylamine.41. The process of wherein the reaction zone pressure is from about 100 torr to about 400 torr.42. The process of wherein the reaction zone pressure is from about 100 torr to about 300 torr.43. The process of wherein the molar ratio of monochlorosilane to ammonia gas is from about 1 to about 1.2.44. A process for preparing silylamines in a tubular laminar flow plug flow gas reactor claim 39 , comprising: (a) directing a flow of a first reactant gas into a reaction zone region of a tube reactor; (b) passing a second reactant gas through a conduit into the ...

PROCESS FOR PREPARING HIGHER HALOSILANES AND HYDRIDOSILANES

The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers. 1. A process for preparing a higher halosilane , the process comprising: {'br': None, 'sub': n', '2n+2, 'SiX,'}, 'converting at least one halosilane of formula {'br': None, 'sub': m', '2m+2, 'SiX, and'}, 'by disproportionation to a product mixture comprising at least one higher halosilane of formula {'br': None, 'sub': a', '2a+2, 'SiX,'}, 'at least one lower halosilane of formulawherein n is equal to or larger than 2;m is larger than n;a is 1 or 2; andX is F, Cl, Br, I, or a combination thereof, andwherein a reaction is catalysed by at least one tertiary phosphine.2. The process according to claim 1 , wherein the at least one tertiary phosphine is at least one selected from the group consisting of a tertiary alkylphosphine claim 1 , a tertiary arylphosphine claim 1 , and a tertiary bidentate phosphine.3. The process according to claim 2 , wherein the at least one tertiary phosphine is at least one selected from the group consisting of trimethylphosphine claim 2 , triethylphosphine claim 2 , and triphenylphosphine.4. The process according to claim 1 , wherein the at least one halosilane is a linear silane.5. The process according to claim 1 , wherein the at least one halosilane is selected from the group consisting of SiX claim 1 , SiX claim 1 , and SiX.6. The process according to claim 1 , further comprising:{'sub': m', '2m+2, 'hydrogenating the at least one ...

Process for preparing hydridosilanes

The present invention relates to a process for preparing hydridosilanes from halosilanes, in which a) i) at least one halosilane of the generic formula Si n X 2n+2 (where n≧3 and X=F, Cl, Br and/or I) and ii) at least one catalyst are converted to form a mixture comprising at least one halosilane of the generic formula Si m X 2m+2 (where m>n and X=F, Cl, Br and/or I) and SiX 4 (where X=F, Cl, Br and/or I), and b) the at least one halosilane of the generic formula Si m X 2m+2 is hydrogenated to form a hydridosilane of the generic formula Si m H 2m+2 , the hydridosilane of the generic formula Si m H 2m+2 is separated from partially halogenated hydridosilanes of the general formula Si m H (2m+2−y) X y (where 1<y<2m+1), and the separated partially halogenated hydridosilanes of the general formula Si m H (2m+2−y) X y (where 1<y<2m+1) are hydrogenated again.

METHOD FOR PRODUCING FLUORINATED POLYSILANES

The invention relates to a method for producing fluorinated polysilanes. Hydrogen fluoride and/or hexafluorosilicic acid, which are obtained in particular during acid digestion of mineral phosphates in the production of phosphate fertilisers, are used for the production of SiF4. The SiF4 obtained is thermally or plasma-chemically converted to fluorinated polysilane. The method is particularly efficient and cost-effective. 1. A method for preparing fluorinated polysilanes , comprising the following steps:{'sub': 2', '6', '4, 'using HF or hexafluorosilicic acid (HSiF) for preparation of SiF; and'}{'sub': '4', 'thermally or plasma-chemically converting the SiFto the fluorinated polysilane.'}2. The method according to claim 1 , wherein HF or hexafluorosilicic acid obtained in the acidic digestion of mineral phosphates in the production of phosphate fertilizers is used.3. The method according to or claim 1 , wherein HF is converted to the transport and storage form HSiF.4. The method according to claim 1 , wherein the yield of SiFfrom the conversion of HSiFis increased by addition of SiO-containing starting materials.5. The method according to claim 1 , wherein the fluorinated polysilane obtained is used for preparation of high-purity silicon.6. The method according to claim 1 , wherein the fluorinated polysilane obtained is used for preparation of hydrogenated polysilanes.7. The method according to claim 6 , wherein hydride salts are used for hydrogenation.8. The method according to according to or claim 6 , wherein NaAlHis used.9. The method according to claim 1 , wherein the fluoride salts formed as a by-product are used as starting materials for aluminum production or for fluoridation of drinking water.10. The method according to claim 1 , wherein the fluorinated polysilane is used for preparation of fluorinated or partly fluorinated oligosilanes.11. The method according to claim 1 , wherein the fluorinated polysilane is used through reaction with HF for preparation ...

Method for Producing Silicon Chloride from Silicon Sludge

Provided is a method for producing silicon chloride from silicon sludge by separating and recovering silicon carbide from waste silicon sludge generated during a semiconductor manufacturing process. With the method for producing silicon chloride from silicon sludge according to the present invention, oil components, iron, silicon that are contained in the silicon sludge may be removed, and silicon carbide may be selectively separated, thereby making it possible to produce high purity silicon chloride that may be used as a raw material for producing silica, silicon, or the like. 1. A method for producing silicon chloride from silicon sludge , the method comprising:(a) distilling silicon sludge generated in a semiconductor manufacturing process to remove oil components;(b) dispersing the distilled silicon sludge into distilled water to prepare a silicon sludge solution;(c) performing ultrasonic treatment on the silicon sludge solution;(d) performing centrifugation on the ultrasonic treated silicon sludge solution to separate phases;(e) recovering silicon carbide particles from the phase-separated silicon sludge solution; and(f) reacting the silicon carbide particles with chlorine gas.2. The method of claim 1 , wherein in step (a) claim 1 , the distillation of the silicon sludge is performed at 100 to 300° C.3. The method of claim 1 , wherein the silicon sludge solution in step (b) contains 2 to 5 weight % of silicon sludge.4. The method of claim 1 , wherein the ultrasonic treatment in step (c) is performed at an intensity of 100 to 500 W for 10 to 300 minutes.5. The method of claim 1 , wherein the centrifugation in step (d) is performed at 300 to 700 rpm for 5 to 100 minutes.6. The method of claim 1 , wherein the reaction of the silicon carbide particles and the chlorine gas in step (f) is performed at 500 to 2000° C. for 30 to 600 minutes.7. The method of claim 2 , wherein the distillation of the silicon sludge was performed at 150 to 200° C.8. The method of claim 4 ...

PROCESS AND APPARATUS FOR CONVERSION OF SILICON TETRACHLORIDE TO TRICHLOROSILANE

A process for hydrogenating chlorosilanes in a reactor, wherein at least two reactant gas streams are introduced separately from one another into a reaction zone, wherein the first reactant gas stream comprising silicon tetrachloride is conducted via a first heat exchanger unit in which it is heated and is then conducted through a heating unit which heats it to a first temperature before the first reactant gas stream reaches the reaction zone, and wherein the second reactant gas stream comprising hydrogen is heated by a second heat exchanger unit to a second temperature, wherein the first temperature is greater than the second temperature, and then introduced into the reaction zone, such that the mixing temperature of the two reactant gas streams in the reaction zone is between 850° C. and 1300° C., and said reactant gas streams react to give product gases comprising trichlorosilane and hydrogen chloride, wherein the product gases obtained in the reaction are conducted through said at least two heat exchanger units and preheat the reactant gas streams of the reaction by the countercurrent principle, wherein the flow passes first through the first heat exchanger unit and then through the second heat exchanger unit. A reactor for hydrogenating chlorosilanes, comprising two gas inlet devices through which reactant gases can be introduced separately from one another into the reactor, and at least one gas outlet device through which a product gas stream can be conducted, at least two heat exchanger units which are connected to one another and which are suitable for heating reactant gases separately from one another by means of the product gases conducted through the heat exchanger units, and a heating zone which is arranged between a first heat exchanger unit and a reaction zone and in which there is at least one heating element. 1. A process for hydrogenating chlorosilanes in a reactor , wherein at least two reactant gas streams are introduced separately from one ...

Method for reducing the aluminum content of neopentasilane

The aluminum content of neopentasilane is reduced by treatment with organic compounds D which contain N, O, and/or S atoms and which have free electron pairs on these atoms.

METHOD FOR PRODUCING CYCLOHEXASILANE

Provided is a method for efficiently obtaining cyclohexasilane using a cyclic silane dianion salt as a raw material without a by-product such as silane gas by a simple device. The method for producing cyclohexasilane has a feature that a cyclic silane dianion salt represented by the following general formula (i) or general formula (ii) is reacted with an aluminum-based reducing agent or a boron-based reducing agent: 3. The method for producing cyclohexasilane according to claim 2 , wherein the solvent represented by the formula (iii) is at least one solvent selected from the group consisting of cyclopentyl methyl ether claim 2 , diisopropyl ether and methyl tertiary butyl ether.4. The method for producing cyclohexasilane according to claim 2 , wherein the obtained reaction solution is separated into solid and liquid after the reduction.5. The method for producing cyclohexasilane according to claim 1 , wherein the reduction is carried out by bringing the cyclic silane dianion salt into contact with the reducing agent in the presence of a solvent.6. The method for producing cyclohexasilane according to claim 1 , wherein at least one of the cyclic silane dianion salt and the reducing agent is added dropwise to a reaction system in which the reduction is carried out.9. The method for producing cyclohexasilane according to claim 3 , wherein the obtained reaction solution is separated into solid and liquid after the reduction.10. The method for producing cyclohexasilane according to claim 2 , wherein the reduction is carried out by bringing the cyclic silane dianion salt into contact with the reducing agent in the presence of a solvent.11. The method for producing cyclohexasilane according to claim 2 , wherein at least one of the cyclic silane dianion salt and the reducing agent is added dropwise to a reaction system in which the reduction is carried out. (1) Field of the InventionThe present invention relates to a method for efficiently obtaining cyclohexasilane using a ...

Process for preparing trichlorosilane

The present invention relates to a process for preparing trichlorosilane and optionally, if required, HCDS and OCTS, by a) in a first step, allowing silicon tetrachloride and silicon to react at a temperature of >800 to 1450° C., b) in a step two, cooling the product stream (PS) thus obtained from step one to obtain a product stream (PG2), c) optionally, in a step three, removing STC and HCDS from the product stream (PG2) to obtain, as a residue or bottom product, a product mixture (PG3), d) optionally, in a step four, removing OCTS from the product stream PG3 from step three, to obtain, as a residue or bottom product, a product mixture (PG4), e) in a step five, reacting the product stream (PG2) originating from step two or the product mixture (PG3) originating from step three or the product mixture (PG4) originating from step four, or a mixture of product streams PG2 and PG3 or a mixture of product streams PG2 and PG4 with hydrogen chloride to obtain a product stream (PHS), and f) in a subsequent step six, removing trichlorosilane from a product stream (PHS) thus obtained, and discharging the remaining STC-containing bottoms or recycling them as a reactant component into step one of the process.

APPARATUS AND METHOD FOR THE CONDENSED PHASE PRODUCTION OF TRISILYLAMINE

The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis process that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This process facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation. 1. A process for preparing trisilylamine comprising:(a) adding a solvent to a reactor vessel;(b) adding monohalosilane into the solvent to form a solution;(c) adding anhydrous ammonia into the solution to form a reaction mixture;(d) forming trisilylamine in the reaction mixture;(e) separating trisilylamine from the reaction mixture; and(f) purifying trisilylamine;{'sub': 'T', 'sup': 'N', 'wherein the solvent has a DN between about 6 to about 28 and an Efrom about 0.1 to about 0.4.'}2. The process of wherein the solvent is selected from the group consisting of aromatic hydrocarbons claim 1 , symmetric ethers claim 1 , unsymmetric ethers claim 1 , poly-ethers claim 1 , crown ethers and chloro-fluorocarbons and mixtures thereof.3. The process of further comprising adjusting the solvent temperature prior to adding the monohalosilane into the solvent to form a solution.4. The process of wherein the reactor vessel is maintained at a pressure of about two atmospheres or less.5. The process of wherein the monohalosilane is selected from the group consisting of monofluorosilane claim 1 , monochlorosilane claim 1 , monobromosilane and monoiodosilane.6. The process of wherein the monohalosilane is monochlorosilane.7. The process of wherein the solvent temperature is adjusted to be between about 70° C. to about −78° C.8. The process of wherein the solvent temperature is adjusted to be between about 50° C. to about −20° C.9. The process of wherein the solvent is anisole.10. ...

STORAGE MATERIAL AND METHOD FOR OBTAINING H-SILANES THEREFROM

A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1. 127-. (canceled)28. A storage material for obtaining hydrogenated silanes (H-silanes) comprising hydrogenated polysilane as a pure compound or mixture of compounds having on average at least six direct Si—Si bonds , substituents of which consist predominantly of hydrogen and are in a composition of which an atomic ratio for substituent:silicon is at least 1:1.29. The storage material according to claim 28 , characterized in that the hydrogenated polysilanea) has its significant vibration bands in IR molecular vibration spectra in a region below 2300 wavenumbers,b) has a significant vibration band in RAMAN molecular vibration spectra in a region of 2000-2200 wavenumbers,{'sup': '29', 'c) has its significant product signals in Si NMR spectra in a chemical shift range of −70 ppm to −130 ppm.'}30. The storage material according to claim 28 , wherein the average chain length of the hydrogenated polysilane is greater than 6 and less than 100.31. The storage material according to claim 28 , wherein the hydrogenated polysilane is colorless to light yellow.32. The storage material according to claim 28 , wherein the hydrogenated polysilane has a metal content of less than 1%.33. The storage material according to claim 28 , wherein the hydrogenated polysilane contains virtually no short-chain branched chain or ring compounds while level of branching points in the short-chain fraction is less than 2% claim 28 , based on the product mixture as a whole.34. The storage material according to claim 28 , wherein substituents of the hydrogenated polysilane consist of hydrogen.35. The storage material according to claim 28 , wherein ...

INORGANIC POLYSILAZANE RESIN

An inorganic polysilazane resin of the present invention has a Si/N ratio (i.e. a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si—NH and Si—Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si—Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions. 1. An inorganic polysilazane resin , wherein a ratio of containing silicon atoms to containing nitrogen atoms , Si/N is 1.30 or more.2. The inorganic polysilazane resin according to claim 1 , wherein a ratio of containing silicon atoms to containing nitrogen atoms claim 1 , Si/N is 1.32 or more3. The inorganic polysilazane resin according to claim 1 , which weight-average molecular weight in terms of polystyrene is 1 claim 1 ,200 to 20 claim 1 ,000.4. The inorganic polysilazane resin according to claim 1 , which is produced by heating an inorganic polysilazane compound containing both Si—NH and Si—Cl to react NH with Cl.5. The inorganic polysilazane resin according to claim 4 , wherein the heating is conducted in the presence of a catalyst.6. The inorganic polysilazane resin according to claim 5 , wherein the catalyst is a tertiary amine.7. A inorganic polysilazane resin according to claim 1 , which is produced by synthesizing a silazane oligomer or polymer with no Si—Cl bond and then thermally reacting the synthesized silazane oligomer or polymer with an added halosilane.8. The ...

ALTERNATIVE METHODS FOR THE SYNTHESIS OF ORGANOSILICON COMPOUNDS

A method of forming chloro-substituted silanes from the reaction of an alkoxysilane with a chlorinating agent in the optional presence of a catalyst is provided. More specifically, chloro-substituted silanes, including but not limited to silicon tetrachloride, are formed by reacting a chlorinating agent, such as thionyl chloride, with an alkylalkoxysilane having the formula (R′O)SiR, where R and R′ are independently selected alkyl groups comprising one or more carbon atoms and x is 0, 1, 2, or 3. The catalyst may be dimethylformamide, (chloromethylene)dimethyliminium chloride, or triethylamine, among others. The chloro-substituted silane formed in the reaction along with several by-products has the formula (R′O)SiRCl; where x is 0, 1, 2, or 3 and y is 1, 2, 3, or 4. One of the by-products of the reaction is an alkyl chloride. 1. A method of preparing chloro-substituted silanes , the method comprising the steps of:{'sub': 4-x', 'x, 'providing an alkoxysilane having the formula (R′O)SiR, where R and R′ are independently selected alkyl groups comprising one or more carbon atoms and x is 0, 1, 2, or 3;'}providing a chlorinating agent;providing a catalyst;{'sub': 4-x-y', 'x', 'y, 'allowing the alkoxysilane to react with the chlorinating agent in the presence of the catalyst to form the chloro-substituted silanes along with multiple by-products; the chloro-substituted silanes having the formula (R′O)SiRCl; where x is 0, 1, 2, or 3; y is 1, 2, 3, or 4; and one of the by-products is an alkyl chloride; and'}separating the chloro-substituted silanes from the by-products.2. The method of claim 1 , wherein the chlorinating agent is one selected from the group of i) thionyl chloride claim 1 , ii) sulfuryl chloride claim 1 , iii) phosphorus oxychloride claim 1 , iv) phosphorus trichloride claim 1 , v) phosphorus pentachloride claim 1 , and mixtures of two or more of groups i)-v).3. The method of claim 1 , wherein the catalyst is one selected from the group of i) dimethylformamide ...

Tetrakis(trichlorosilyl)germane, process for the preparation thereof and use thereof

A novel process provides for the preparation of the chlorinated, uncharged substance tetrakis(trichlorosilyl)germane, and for the use thereof. 2: The process according to claim 1 , wherein in step (b) the reaction is conducted at room temperature claim 1 , and/or in step (d) the nonpolar solvent is removed at room temperature.3: The process according to claim 1 , wherein claim 1 , in step (b) claim 1 , the chlorinated hydrocarbon is dichloromethane CHCl.4: The process according to claim 1 , wherein claim 1 , in step (c) claim 1 , the at least one nonpolar solvent is at least one selected from the group consisting of hexane claim 1 , n-hexane claim 1 , pentane claim 1 , and benzene.5: The process according to claim 1 , wherein claim 1 , in step (a) claim 1 ,{'sub': 3', '3', '3, 'the mixing of [X][Ge(SiCl)] and AlClcomprises stirring,'}and, in step (b),the mixture obtained in step (a) is dissolved completely in the at least one chlorinated hydrocarbon, and, after a time of 0.1 to 24 hours,the at least one chlorinated are hydrocarbon is removed.6: The process according to claim 1 , wherein claim 1 ,in step (c), after the introducing of the crude product, the temperature of the at least one nonpolar solvent is brought for from 1 to 5 times from room temperature to elevated temperature, and subsequently the at least one nonpolar solvent is allowed to cool.7: The process according to claim 1 , further comprising:depositing at least one Si—Ge layer with the tetrakis(trichlorosilyl)germane as precursor.8: A Si—Ge layer deposition process claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'depositing at least one Si—Ge layer with, as a precursor, a tetrakis(trichlorosilyl)germane obtained by the process according to .'}9: The process according to claim 1 , wherein claim 1 , in step (c) claim 1 , the at least one nonpolar solvent comprises n-hexane.10: The process according to claim 1 , wherein claim 1 , in step (a) claim 1 ,{'sub': 3', '3', '3', '3', '3', ...

METHOD AND APPARATUS FOR THE PREPARATION OF SILANES

The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process. 2. The process according to claim 1 , wherein the pressure in process step iii) is elevated relative to the pressure in process stage ii).3. The process according to claim 1 ,{'sub': ab', 'abs, 'wherein the resulting phase in process step iii) has a pressure of 1 barto 100 bar.'}4. The process according to{'sub': abs', 'abs, 'wherein the monosilane in process step ii) is subjected to the gas discharge in the presence of hydrogen at a pressure between 0.05 mbarand 15,000 mbar.'}5. The process according to claim 1 ,{'sub': abs', 'abs, 'wherein the gas discharge in process step ii) is effected at a pressure between 0.1 mbarand 1,000 mbar.'}6. The process according towherein the gas discharge in process step ii) is effected at a temperature between −60° C. and 10° C.7. The process according to wherein the reactant stream has a defined ratio of hydrogen and monosilane in percent by volume (% by vol.) of 15:1 to 1:5.8. The process according to claim 1 , wherein the reactant stream in step ii) is exposed to a nonthermal plasma.9. The process according to claim 1 , wherein the defined ratio in process step iii) of the partial hydrogen pressure to the partial pressure of the gaseous silanes is set by means of a hydrogen-permeable membrane.10. The process according to claim 9 , wherein the membrane is permeable to hydrogen and essentially impermeable to silanes.11. The process according to claim 9 , wherein said membrane comprises at least one of the following materials: quartz claim 9 , metal claim 9 , metallic alloy claim 9 , ceramic claim 9 , zeolite claim 9 , organic polymer and/or a composite membrane having an at least two-layer structure comprising one or more of the aforementioned materials.12. A plant for performance of the process according to comprising:a reactor for generation of a gas discharge, ...

PROCESS AND APPARATUS FOR PREPARATION OF OCTACHLOROTRISILANE

The invention relates to a process and an apparatus for controlled preparation of octachlorotrisilane from monomeric chlorosilanes, by subjecting the chlorosilanes to a thermal plasma. 1. A process for preparing octachlorotrisilane by subjecting chlorosilanes comprising at least one monomeric chlorosilane of the general formula I:{'br': None, 'sub': x', '4-x, 'HSiCl\u2003\u2003(I),'}where x is independently selected from 0, 1, 2 and 3 to a thermal plasma.2. The process according to claim 1 ,further comprising obtaining as a mixture octachlorotrisilane and hexachlorodisilane.3. The process according to claim 1 , further comprising isolating ultrahigh-purity octachlorotrisilane.4. The process according to claim 1 , further comprising obtaining octachlorotrisilane having a titanium content of less than 1 ppm by weight.5. The process according to claim 1 , wherein the reactant used is ultrahigh-purity tetrachlorosilane claim 1 , ultrahigh-purity trichlorosilane claim 1 , and/or ultrahigh-purity dichlorosilane.6. The process according to that isperformed in an apparatus comprising a gas discharge reactor having two columns.7. The process according to claim 6 , whereina first column is provided with a column inlet for removal of the octachlorotrisilane upstream of the gas discharge reactor and a second column with a column inlet for removal of the low boilers downstream of the gas discharge reactor, andthe column outlet of column has a dedicated gas divider, andthe gas divider has a dedicated recycle line which supplies the low boilers to the first or to the gas discharge reactor as a return stream.8. The process according to claim 7 , wherein the gas divider has a shut-off claim 7 , valve claim 7 , or other regulating unit.9. The process according to claim 6 , wherein chlorosilane of the formula I or chlorosilane of the formula I is introduced into the gas discharge reactor or supplied to the first column in a mixture with hexachlorodisilane.10. The process according to ...

METHODS FOR SEPARATING HALOSILANES

Methods for separating halosilanes that involve use of a distillation column having a partition that divides the column into portions for producing three product fractions are disclosed. Methods and systems for producing silane by disproportionation of halosilanes that use such columns and methods for producing polycrystalline silicon are also disclosed. 1. A method for separating halosilanes comprising:introducing a first halosilane, a second halosilane and a third halosilane into a halosilane distillation column, the first halosilane having a boiling point less than the second halosilane, the second halosilane having a boiling point less than the third halosilane, the distillation column comprising a partition that divides the column into a main portion and a side portion;withdrawing a first halosilane-enriched overhead fraction relative to the aggregate of the feeds introduced into the distillation column;withdrawing a second halosilane-enriched side fraction relative to the aggregate of the feeds introduced into the distillation column from the side portion of the column as a side fraction; andwithdrawing a third halosilane-enriched bottoms fraction relative to the aggregate of the feeds introduced into the distillation column.2. The method as set forth in wherein the first halosilane is dihalosilane claim 1 , the second halosilane is trihalosilane and the third halosilane is silicon tetrahalide.3. The method as set forth in wherein a monohalosilane is introduced into the distillation column claim 2 , the overhead fraction being enriched in monohalosilane relative to the aggregate of the feeds introduced into the distillation column.4. The method as set forth in wherein the distillation column operates at a pressure of about 200 kPa gauge to about 2000 kPa gauge as measured at the column overhead.5. The method as set forth in wherein the distillation column includes a condenser claim 1 , the temperature of the condenser being from about 20° C. to about 120° C.6. ...

METHOD AND APPARATUS FOR PRODUCING DISILANE THROUGH PYROLYSIS OF MONOSILANE

An apparatus for producing disilane through pyrolysis of monosilane, includes: a monosilane pyrolysis unit; a solid particle removal unit which removes solid particles generated in the pyrolysis unit; a condensing unit which liquefies and collects unreacted monosilane, and disilane and higher silanes with three (3) to seven (7) silicon atoms as pyrolysis products excluding hydrogen from a gas with the solid particles removed; a first separation unit which separates monosilane from a mixture of the liquefied unreacted monosilane, disilane and higher silanes; and a second separation unit which separates disilane and higher silanes from the mixture with the monosilane removed. In accordance with the present disclosure, disilane can be produced economically and efficiently with high purity through pyrolysis of monosilane. 1. An apparatus for producing disilane through pyrolysis of monosilane , comprising:{'sup': '−1', 'a monosilane pyrolysis unit configured to pyrolyze monosilane and produce disilane and higher silanes, the pyrolysis unit having a pyrolysis temperature of 400-460° C., a pyrolysis pressure of 3-5 bar and a pyrolysis gas space velocity of 60-500 hr;'}a solid particle removal unit configured to remove particles produced by the pyrolysis unit, the solid particle removal unit comprising a metal filter for removing particles exceeding 0.1 μm in diameter, and a ceramic support provided behind the metal filter for removing particles of 0.1 μm or smaller in diameter;a condensing unit configured to condense and liquefy, after said removal of particles, unreacted monosilane, and disilane and higher silanes with three (3) to seven (7) silicon atoms produced as results of the pyrolysis by the pyrolysis unit, excluding hydrogen from a gas with the solid particles removed by said solid particle removal unit;a first separation unit configured to separate monosilane from a mixture of the liquefied unreacted monosilane, disilane and higher silanes; anda second separation ...

Method for producing higher silanes with improved yield

The invention relates to a method for producing hexachlorodisilane or Ge2CI6, which is characterized in that, in a gas containing SiCI4 or GeCI4, a) a non-thermal plasma is generated by means of an alternating voltage of the frequency f, and wherein at least one electromagnetic pulse having the repetition rate g is coupled into the plasma, the voltage component of which pulse has an edge steepness in the rising edge of 10 V ns-1 to 1 kV ns-1 and a pulse width b of 500 ns to 100 μs, wherein a liquid phase is obtained, and b) pure hexachlorodisilane or Ge2Cl6 is obtained from the liquid phase.

PREPARATION OF Si-H CONTAINING IODOSILANES VIA HALIDE EXCHANGE REACTION

Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed. 1. A method of synthesizing a Si—H containing iodosilane having the formula:{'br': None, 'sub': w', 'x', 'y', 'z, 'SiHRI\u2003\u2003(1)'}{'br': None, 'sub': a', 'b', 'c', '3, 'N(SiHRI)\u2003\u2003(2) or'}{'br': None, 'sub': m', 'n', 'o', '2', '2, '(SiHRI)—CH\u2003\u2003(3)'}{'sub': '3', 'claim-text': [{'sub': w', 'x', 'y', 'z', 'a', 'b', 'c', '3', 'm', 'n', 'o', '2', '2, 'reacting a halosilane reactant having the formula SiHRXor N(SiHRX)or (SiHRX)—CH, wherein X is Cl or Br, and w, x, y, z, a, b, c, m, n, and o are as defined above, and an alkali metal halide reactant having the formula MI, wherein M ═Li, Na, K, Rb, or Cs; to produce a mixture of MX with (1), (2) or (3); and'}, {'sub': w', 'x', 'y', 'z', 'a', 'b', 'c', '3', 'm', 'n', 'o', '2', '2, 'isolating the Si—H containing iodosilane having the formula SiHRI, N(SiHRI), or (SiHRI)—CHfrom the mixture.'}], 'wherein w is 1 to 3, x+y+z=2w+2, x is 1 to 2w+1, y is 0 to 2w+1, z is 1 to 2w+1, each a is independently 0 to 3, each b is independently 0 to 3, each c is independently 0 to 3, a+b+c=3 provided that at least one a and at least one c is 1, each m is independently 0 to 3, each n is independently 0 to 3, each o is independently 0 to 3, m+n+o=3 provided that at least one m and at least one o is 1, and each R is independently a C1 to C12 hydrocarbyl group, Cl, Br, or a ER′group, wherein each E is independently Si or Ge and each R′ is independently H or a C1 to C12 hydrocarbyl group, the method comprising2. The method of claim 1 , wherein M=Li.3. The method of claim 1 , further comprising adding a non-coordinating solvent to the reacting step.4. The method of claim 3 , wherein the non-coordinating solvent is propane claim 3 , butane claim 3 , pentane claim 3 , hexane claim 3 , heptanes claim 3 , chloromethane claim 3 , dichloromethane claim 3 , chloroform claim 3 , carbon ...

ECONOMICALLY VIABLE PROCESS FOR PRODUCING ORGANICALLY MODIFIED LYO- OR AEROGELS

It is an object of the invention to provide a rapid and economically viable process which is notable for efficient use of material, especially of the silylating agent, and by means of which organically modified lyo- or aerogels are obtained in a rapid and simple manner. This object is achieved by virtue of the invention providing a process for producing organically modified gels selected from lyo- and aerosols by (i) emulsifying a basic polar phase comprising water and starting materials for silicatic gels in a nonpolar phase containing a water-immiscible precursor for an active silylating agent, (ii) starting formation of gel and ageing by lowering the pH, and then (iii) starting the silylation and the exchange of solvent by lowering the pH. If the gels are aerogels, the gels provided can be used for thermal and/or acoustic insulation. 1. A process for producing lyogels , said process comprising the following stepsi) emulsifying a basic, polar phase comprising water and starting materials for silicatic gels in an apolar phase comprising a water-immiscible precursor of an active silylating agent,ii) commencing gel formation and aging by lowering a pH, and theniii) lowering the pH to commence silylation and solvent exchange.2. The process as claimed in claim 1 , wherein the basic claim 1 , polar phase comprises a mixture of the starting materials for [SiO] and [RSiO] units where x=1 or 2 or mixtures thereof and R is identical or different and is hydrogen or an organic claim 1 , substituted or unsubstituted radical.3. The process as claimed in claim 1 , wherein there is a phase mediator in the basic claim 1 , polar phase.4. The process as claimed in claim 1 , wherein the basic claim 1 , polar phase is produced by mixing individual components in the apolar phase.5. The process as claimed in claim 1 , wherein the apolar phase consists only of the water-immiscible precursor of an active silylating agent.6. The process as claimed in claim 1 , wherein disiloxanes or ...

METHOD FOR PRODUCING HIGHER SILANES

The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds. 1. A process for preparing dimeric and/or trimeric silicon compounds of the general formula (Ia) or the germanium compounds of the general formula (Ib)where R1 to R8 are each hydrogen and/or halogen, where the halogen is selected from chlorine, bromine and/or iodine, where R1 to R8 denote identical or different radicals in the formula (Ia) or (Ib), with the proviso that at least one of the R1 to R8 radicals is a halogen, and n=0 or 1,a) wherein a silicon compound of the general formula (IIa) 'or a germanium compound of the general formula (IIb)'} 'the silicon compound of the formula (IIa) in the presence of one or more compounds of the general formula (IIIa)', 'where R9 to R12 are each hydrogen, organyl, where the organyl comprises a linear, branched and/or cyclic alkyl having 1 to 18 carbon atoms, linear, branched and/or cyclic alkenyl having 2 to 8 carbon atoms, unsubstituted or substituted aryl and/or corresponding benzyl, and/or halogen, and the halogen is selected from chlorine, bromine and/or iodine, where R9 to R12 denote identical or different radicals in the formula (IIa) or (IIb) and n=1 or 2,'}} 'or the germanium compound of the formula (IIb) in the presence of one or more compounds of the general formula (IIIb)'} 'where R13 to R16 are each hydrogen, organyl, where the organyl comprises a linear, branched and/or cyclic alkyl having 1 to 18 carbon atoms, linear, branched and/or cyclic alkenyl having 2 to 8 carbon atoms, unsubstituted or substituted aryl and/or corresponding benzyl, and/or halogen, and the halogen is selected from chlorine, bromine and/or iodine, where R13 to R16 denote identical or different radicals of the formula ...

Column and process for disproportionation of chlorosilanes into monosilane and tetrachlorosilane and plant for production of monosilane

A column includes a column head, a column sump and a tube-shaped column shell disposed therebetween, two or more reaction zones lying above each other which each accommodate a catalyst bed, in which catalyst beds chlorosilanes disproportionate into low-boiling silanes, which form an ascending stream of gas, and also into high-boiling silanes which form a downwardly directed stream of liquid, within the column shell and along the column axis, two or more rectificative separation zones, the reaction zones and the separation zones alternate along the column axis, the separation zones are configured such that the stream of gas and the stream of liquid meet in the separation zones, and the reaction zones are configured such that the downwardly directed stream of liquid is led through the catalyst beds, whereas the upwardly directed stream of gas passes the catalyst beds in spatial separation from the stream of liquid.

PROCESS FOR PRODUCING ISOMER ENRICHED HIGHER SILANES

Methods of selectively synthesizing n-tetrasilane are disclosed. N-tetrasilane is prepared by catalysis of silane (SiH), disilane (SiH), trisilane (SiH), or mixtures thereof. More particularly, the disclosed synthesis methods tune and optimize the n-tetrasilane:i-tetrasilane isomer ratio. The isomer ratio may be optimized by selection of process parameters, such as temperature and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of n-tetrasilane. 1. A method of selectively synthesizing n-tetrasilane , the method comprising: producing a silane mixture having a n-SiH:i-SiHratio ranging from approximately 5:1 to approximately 15:1 by reacting a SiHreactant , wherein n=1-3 , with a heterogeneous catalyst selected from a Group I , II or III element from the Periodic Table or oxides , alkyls , hydrides , silanides , or silyl amides thereof.2. The method of claim 1 , wherein the SiHreactant is SiH.3. The method of claim 2 , wherein the SiHreactant is liquid SiH.4. The method of claim 1 , wherein the SiHreactant is a mixture of SiHand SiH.5. The method of claim 1 , wherein the heterogeneous catalyst is selected from the group consisting of LiAlH claim 1 , LiAlHR claim 1 , NaAlHR claim 1 , KAlHR claim 1 , RbAlHR claim 1 , CsAlHR claim 1 , and combinations thereof claim 1 , wherein n=1 claim 1 , 2 claim 1 ,or 3 and each R is independently CHwith m=1-10 or an aliphatic group having an oxygen or nitrogen atom.6. The method of claim 5 , wherein the heterogeneous catalyst is sodium bis(2-methoxyethoxy)aluminum hydride.7. The method of claim 6 , wherein the ratio of n-SiH:i-SiHranges from approximately 8:1 to approximately 15:1.8. The method of claim 1 , wherein the heterogeneous catalyst is a Group I metal and Group I metal oxide.9. The method of claim 1 , wherein the heterogeneous catalyst is a metal silylamide catalyst.10. The method of claim 9 , wherein the metal silylamide catalyst is ...

PROCESS FOR PRODUCING LIQUID POLYSILANES AND ISOMER ENRICHED HIGHER SILANES

Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SiHwith n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH), disilane (SiH), trisilane (SiH), and mixtures thereof. 1. A method of producing SiH , wherein n=4-100 , the method comprising:{'sub': a', '(2a+2)', '6', '5', '3', 'n', '(2n+2), 'reacting a liquid SiHreactant, wherein a=1-4, with a B(CF)catalyst to produce SiH, wherein n>a.'}2. The method of claim 1 , wherein the SiHreactant is SiH.3. The method of claim 1 , wherein the SiHreactant is a mixture of SiHand SiH.4. The method of claim 1 , wherein n=11-30.5. The method of claim 1 , further comprising fractionally distilling SiHto produce a Si-containing film forming composition comprising approximately 95% w/w to approximately 100% w/w n-SiH.6. The method of claim 1 , further comprising fractionally distilling SiHto produce a Si-containing film forming composition comprising approximately 95% w/w to approximately 100% w/w n-SiH.7. The method of claim 1 , further comprising fractionally distilling SiHto produce a Si-containing film forming composition comprising approximately 95% w/w to approximately 100% w/w n-SiH.8. The method of claim 1 , further comprising fractionally distilling SiHto produce a Si-containing film forming composition comprising approximately 95% w/w to approximately 100% w/w n-SiH. Methods of synthesizing higher silanes are disclosed (i.e., SiHwith n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ...

TARGETED PRODUCTION OF 2,2,3,3-TETRASILYL TETRASILANE

The present invention provides the octasilane 2,2,3,3-tetrasilyltetrasilane 1, compositions comprising one or more additional constituents that are not 1 as well as 2,2,3,3-tetrasilyltetrasilane 1, processes for preparing 2,2,3,3-tetrasilyltetrasilane 1 and mixtures of higher hydridosilanes that include 1. The present invention further provides for the use of 1 and mixtures of higher hydridosilanes including 1 for deposition of silicon-containing material. 3. A composition comprising the 2 claim 1 ,2 claim 1 ,3 claim 1 ,3-tetrasilyltetrasilane of the formula 1 according to claim 1 , and one or more additional constituents that are not 2 claim 1 ,2 claim 1 ,3 claim 1 ,3-tetrasilyltetrasilane of the formula 1.4. The composition according to claim 3 , comprising at least 30 area % of the 2 claim 3 ,2 claim 3 ,3 claim 3 ,3-tetrasilyltetrasilane claim 3 , not more than 10 area % of 2 claim 3 ,2 claim 3 ,3 claim 3 ,3 claim 3 ,4 claim 3 ,4-hexasilylpentasilane and not more than 30 area % of neopentasilane claim 3 , where the difference from 100 area % includes higher hydridosilanes of the formula SiHwith m=0 claim 3 , 2 and n≥5 claim 3 , unconverted reactants and by-products that are not hydridosilanes claim 3 , and where the stated area percentages are based on the total area of a gas chromatography measurement.5. The composition according to claim 4 , in the liquid phase under standard conditions/SATP claim 4 , freed of unconverted reactants and by-products claim 4 , comprising 50-70 area % of the 2 claim 4 ,2 claim 4 ,3 claim 4 ,3-tetrasilyltetrasilane claim 4 , 2 claim 4 ,2 claim 4 ,3 claim 4 ,3 claim 4 ,4 claim 4 ,4-hexasilylpentasilane claim 4 , and higher hydridosilanes of the formula SiHwith m=0 claim 4 , 2 and n>5 claim 4 , where the difference from 100 area % comprises nonvolatile higher hydridosilanes of the formula SiHwith m=0 claim 4 , 2 and n>11 claim 4 , and where the stated area percentages are based on the total area of a gas chromatography measurement.6. ...

DIIODOSILANE PRODUCING METHOD

Industrial-scale production of diiodosilane through reaction between phenylsilane and iodine is safely and efficiently performed. Provided is a diiodosilane producing method wherein reaction is started between phenylsilane and iodine at a low temperature, the method including at least the step of, after dropping and mixing step finishes, pumping a reaction solution little by little continuously while raising a temperature thereof. 12.-. (canceled)3. A method for producing diiodosilane by dropping phenylsilane and a catalyst to a mixture of a solvent and iodine in a reaction vessel , the method comprising the step of:taking a reaction mixture containing the solvent, iodine, phenylsilane, the catalyst, and a reaction product out of the reaction vessel little by little continuously or occasionally, and pumping the reaction mixture while raising a temperature of the reaction mixture.4. The method for producing diiodosilane according to claim 3 , wherein the step of taking the reaction mixture out of the reaction vessel little by little continuously or occasionally claim 3 , and pumping the same while raising the temperature of the same claim 3 , is a step that is performed in a pipe for pumping the reaction mixture claim 3 , the pipe being attached to the reaction vessel; the step of pumping the reaction mixture and raising the temperature of the reaction mixture claim 3 , performed in the pipe claim 3 , is any one of the following:(a) two or more reaction vessels are used, and the step is performed in a pipe that links adjacent reaction vessels; or(b) in the above-described step (a), the reaction mixture is returned from the last reaction vessel to any one of the reaction vessels, and the step of pumping the reaction mixture and raising the temperature of the reaction mixture is performed repeatedly in each pipe until the reaction mixture is finally taken out of the above-described last reaction vessel; or(c) one reaction vessel is used, and the step of pumping the ...

CYCLOHEXASILANE AND METHOD FOR PRODUCING THE SAME

High purity cyclohexasilane and a method for increasing the purification efficiency thereto are provided. The method for producing cyclohexasilane of the present invention is characterized in that, in distilling crude cyclohexasilane to obtain purified cyclohexasilane, the absolute pressure during distillation is set to 2 kPa or less, and the heating temperature of crude cyclohexasilane is set to 25 to 100° C. The cyclohexasilane of the present invention contains pure cyclohexasilane at a rate of 98% by mass or more and 100% by mass or less. 1. Cyclohexasilane comprising pure cyclohexasilane at a rate of 98% by mass or more and 100% by mass or less.2. The cyclohexasilane according to claim 1 , comprising a dimer of cyclohexasilane at a rate of 2% by mass or less.3. Cyclohexasilane in which the content of a metal element is 0.01 to 100 ppb.4. A method for producing cyclohexasilane claim 1 , wherein claim 1 , in distilling crude cyclohexasilane to obtain purified cyclohexasilane claim 1 , the absolute pressure during distillation is set at 2 kPa or less claim 1 , and the heating temperature of crude cyclohexasilane is set at 25 to 100° C.5. A method for producing a silicon hydride compound of formula (1):{'br': None, 'sub': 2', 'n, '(SiH)\u2003\u2003(1)'} {'br': None, 'sub': m', '2m+2, 'SiH\u2003\u2003(2)'}, 'wherein n is 3 to 6, or a silicon hydride compound of formula (2)'}wherein m is 3 to 6, comprising:subjecting a crude silicon hydride compound to distillation at least two times, steps of which distillation are carried out under different conditions.6. A method for storing a silicon hydride compound claim 1 , wherein a silicon hydride compound of formula (1):{'br': None, 'sub': 2', 'n, '(SiH)\u2003\u2003(1)'}wherein n is 3 to 6, {'br': None, 'sub': m', '2m+2, 'SiH\u2003\u2003(2)'}, 'or a silicon hydride compound of formula (2)wherein m is 3 to 6, is stored at 40° C. or less in a storage container in which an inert gas with an oxygen concentration of 100 ppm or ...

HYDROGENATED SILANE COMPOSITION

At least one embodiment of the present disclosure provides a hydrogenated silane composition containing cyclohexasilane of a cyclic hydrogenated silane having high storage stability. 1. A hydrogenated silane composition , wherein a content ratio of normal hexasilane and silylcyclopentasilane to cyclohexasilane is 0.0020 or less on a mass basis.2. The hydrogenated silane composition according to claim 1 , wherein a content of silylcyclopentasilane is 0.0001 to 0.5% by mass per 100% by mass of the hydrogenated silane composition.3. The hydrogenated silane composition according to claim 1 , wherein a content of normal hexasilane is 0.5% by mass or less per 100% by mass of the hydrogenated silane composition.4. The hydrogenated silane composition according to claim 2 , wherein a content of normal hexasilane is 0.5% by mass or less per 100% by mass of the hydrogenated silane composition.5. The hydrogenated silane composition according to claim 1 , wherein a content of cyclohexasilane is 97% by mass or more per 100% by mass of the hydrogenated silane composition.6. The hydrogenated silane composition according to claim 2 , wherein a content of cyclohexasilane is 97% by mass or more per 100% by mass of the hydrogenated silane composition.7. The hydrogenated silane composition according to claim 3 , wherein a content of cyclohexasilane is 97% by mass or more per 100% by mass of the hydrogenated silane composition.8. The hydrogenated silane composition according to claim 4 , wherein a content of cyclohexasilane is 97% by mass or more per 100% by mass of the hydrogenated silane composition. This application claims the benefit of priority based on Japanese Patent Application No. 2017-167649, filed on Aug. 31, 2017. The entire content of the specification of Japanese Patent Application No. 2017-167649, filed on Aug. 31, 2017, is incorporated into this application by reference.At least one embodiment of the present disclosure relates to a hydrogenated silane composition. ...

HYDROGENATED SILANE COMPOSITION

At least one embodiment of the present disclosure provides a hydrogenated silane composition containing a cyclic hydrogenated silane having high storage stability. 1. A hydrogenated silane composition ,wherein a content ratio of a linear hydrogenated silane having Si atoms of 5 or less to a cyclic hydrogenated silane having Si atoms of 5 to 7 is 0.009 or less,wherein the cyclic hydrogenated silane comprises at least cyclohexasilane, and further comprises at least one cyclic hydrogenated silane having a branched silyl group selected from silylcyclopentasilane and silylcyclohexasilane, andwherein a content ratio of a total of the silylcyclopentasilane and the silylcyclohexasilane to the cyclic hydrogenated silane having Si atoms of 5 to 7 is 10 ppb or more on a mass basis.2. The hydrogenated silane composition according to claim 1 , wherein the cyclic hydrogenated silane comprises cyclopentasilane claim 1 , cyclohexasilane claim 1 , silylcyclopentasilane claim 1 , and silylcyclohexasilane.3. The hydrogenated silane composition according to claim 1 , wherein the linear hydrogenated silane comprises monosilane claim 1 , disilane claim 1 , trisilane claim 1 , tetrasilane claim 1 , and pentasilane.4. The hydrogenated silane composition according to claim 2 , wherein the linear hydrogenated silane comprises monosilane claim 2 , disilane claim 2 , trisilane claim 2 , tetrasilane claim 2 , and pentasilane.5. The hydrogenated silane composition according to claim 1 , wherein a content of cyclohexasilane is 95% by mass or more per 100% by mass of the cyclic hydrogenated silane.6. The hydrogenated silane composition according to claim 2 , wherein a content of cyclohexasilane is 95% by mass or more per 100% by mass of the cyclic hydrogenated silane.7. The hydrogenated silane composition according to claim 3 , wherein a content of cyclohexasilane is 95% by mass or more per 100% by mass of the cyclic hydrogenated silane.8. The hydrogenated silane composition according to claim 4 , ...

METHOD FOR PRODUCING CHLOROPOLYSILANE AND FLUIDIZED-BED REACTOR

Disclosed is a method for producing chloropolysilane by which the yield of a fluid reaction to produce the chloropolysilane is improved while blockage in a reactor caused by attachment of higher-order silicon chloride as a by-product is prevented. In producing the chloropolysilane by reacting fluidized silicon particles or silicon alloy particles with a chlorine gas, an outlet filter is provided, upstream from a product outlet that releases a reaction product, above the area in which the silicon particles or silicon alloy particles are fluidized inside a reaction tank. The outlet filter prevents fine particles blown up by fluidization from flowing out of the reaction tank through the product outlet. A temperature of the outlet filter is set in a range of 210 to 350° C. 19-. (canceled)10. A method for producing chloropolysilane by reacting fluidized silicon particles or silicon alloy particles with a chlorine gas ,wherein an outlet filter is provided, upstream from a product outlet that releases a reaction product, above the area in which the silicon particles or silicon alloy particles are fluidized inside a reaction tank, the outlet filter preventing fine particles blown up by being fluidized from flowing out of the reaction tank through the product outlet, and a temperature of the outlet filter is set in a range of 210 to 350° C.11. The method for producing chloropolysilane according to claim 10 ,wherein the silicon particles or silicon alloy particles are fluidized by a vibro-fluidization method.12. The method according to claim 11 , wherein the outlet filter has a pore diameter in a range of 5 to 500 μm.13. The method for producing chloropolysilane according to claim 12 ,wherein a second filter that prevents fine particles that have passed through the outlet filter from flowing out to a receiver that reserves the reaction product is provided in addition to the outlet filter.14. The method for producing chloropolysilane according to claim 13 ,wherein the outlet ...

Methods and devices for growing oxide crystals in oxygen atmosphere

The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

SEPARATION OF CONJUNCT POLYMER FROM VOLATILE REGENERANT FOR IONIC LIQUID REGENERATION

Processes for separating conjunct polymer from an organic phase are described. A mixture comprising an ionic liquid phase and the organic phase into the ionic phase and an organic phase comprising the conjunct polymer and at least one silyl or boryl compound. The organic phase is separated in a fractionation column into an overhead fraction comprising unreacted silane or borane compound and a bottoms fraction comprising the conjunct polymer and the silyl or boryl compound. The bottoms fraction is passed through an adsorption zone, and the silyl or boryl compound is recovered. Alternatively, the organic phase is passed through an adsorption zone first to remove the conjunct polymer and then a fractionation zone to separate the unreacted silane or borane compound from the silyl or boryl compound. 1. A process for separating conjunct polymer from an organic phase comprising:separating a mixture comprising an ionic liquid phase and the organic phase into the ionic phase comprising ionic liquid and the organic phase comprising the conjunct polymer and at least one silyl or boryl compound; and separating the organic phase in a first fractionation column into at least a first overhead fraction comprising unreacted silane or borane compound and a first bottoms fraction comprising the conjunct polymer and at least a portion of the at least one silyl or boryl compound; and', 'passing the first bottoms fraction through a first adsorption zone;', 'recovering the at least the portion of the at least one silyl or boryl compound;', 'or', 'passing the organic phase through a second adsorption zone;', 'recovering a stream comprising unreacted silane or borane compound and the at least one silyl or boryl compound;', 'separating the stream comprising the unreacted silane or borane compound and the at least one silyl or boryl compound in a second fractionation column into at least a second overhead fraction comprising the unreacted silane or borane compound and a second bottoms ...

METHOD FOR PURIFYING CHLOROSILANE

First, at least one of silanol and a siloxane compound is generated in a chlorosilane (S). In the step, for example, an inert gas having a moisture concentration of 0.5 to 2.5 ppm is brought into contact with the chlorosilane to dissolve the moisture, and at least one of silanol and a siloxane compound is generated through a hydration reaction of a moiety of the chlorosilane. Next, a boron-containing compound contained in the chlorosilane is reacted with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide (S). Through the step (S), the boron-containing compound being a low boiling point compound is converted to a boron oxide being a high boiling point compound, and therefore the difference in boiling point from the boiling point of chlorosilane becomes larger to make later separation easy. 1. A method for purifying a chlorosilane by removing a boron-containing compound in the chlorosilane , comprising the following (A) to (C):(A) generating at least one of silanol and a siloxane compound in the chlorosilane;(B) reacting a boron-containing compound comprised in the chlorosilane with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide; and(C) distilling the chlorosilane to remove the boron oxide.2. The method for purifying a chlorosilane according to claim 1 , wherein (B) further comprises allowing the boron oxide to adsorb a metal-containing compound comprised in the chlorosilane claim 1 , thereby converting the metal-containing compound to an addition compound claim 1 , and (C) further comprises removing the addition compound.3. A method for purifying a chlorosilane by removing a metal-containing compound in the chlorosilane claim 1 , comprising the (D) to (F):(D) generating at least one of silanol and a siloxane compound in the chlorosilane;(E) allowing the silanol or the siloxane compound to adsorb the metal-containing compound comprised in the chlorosilane, ...

NANO SILICON MATERIAL, METHOD FOR PRODUCING SAME, AND NEGATIVE ELECTRODE OF SECONDARY BATTERY

A nano silicon material having reduced amounts of oxygen (O) and chlorine (Cl) contained therein is provided. 117-. (canceled)18. A nano silicon material containing fluorine and nano-sized silicon crystallites , wherein{'sub': x', 'y', 'z, 'an elemental composition of the nano silicon material has a relationship of SiOClF(0<(x+y+z)≦1, x<0.5) in atom ratio, and'}the silicon crystallites have a crystallite size of 0.5 nm to 300 nm, the crystallite size being calculated in accordance with Scherrer's equation from a half width of a diffraction peak of a (111) plane in an X-ray diffraction measurement result.19. The nano silicon material according to claim 18 , wherein the nano silicon material has a peak at a lower wave number side than 520 cmof Raman shift in a Raman spectrum claim 18 , and a half width of the peak is within a range of 30 to 100 cm.20. The nano silicon material according to claim 18 , wherein the nano silicon material is composed of complex particles further containing at least one of amorphous silicon claim 18 , a silicon oxide (SiO claim 18 , 0 Подробнее

Method for Producing Cyclic Silane Using Concentration Method

There is provided a cyclic silane having high purity, particularly cyclopentasilane having high purity, and a composition containing a polysilane obtained by polymerization of the cyclic silane which a highly conductive and good silicon thin film is formed by applying the composition in a form of a coating-type polysilane composition to a substrate, followed by baking. A method for producing a cyclic silane of Formula (3): 1. A method for producing a cyclic silane of Formula (3):{'br': None, 'sub': 2', 'n, '(SiH)\u2003\u2003(3)'}wherein n is an integer of 4 to 6 {'br': None, 'sup': 1', '2, 'sub': 'n', '(SiRR)\u2003\u2003(1)'}, 'comprising reacting a cyclic silane compound of Formula (1){'sup': 1', '2, 'sub': '1-6', 'claim-text': {'br': None, 'sup': 3', '4, 'sub': 'n', '(SiRR)\u2003\u2003(2)'}, 'wherein Rand Rare each a hydrogen atom, a Calkyl group, or a substituted or unsubstituted phenyl group, and n is an integer of 4 to 6, with a hydrogen halide in cyclohexane in a presence of an aluminum halide to obtain a solution containing a cyclic silane compound of Formula (2){'sup': 3', '4, 'wherein Rand Rare each a halogen atom, and n is an integer of 4 to 6, and then distilling the solution to obtain the cyclic silane compound of Formula (2), and'}dissolving the cyclic silane compound of Formula (2) in an organic solvent, and reducing the cyclic silane compound of Formula (2) with hydrogen or lithium aluminum hydride.2. The method according to claim 1 , wherein both Rand Rare phenyl groups.3. The method according to claim 1 , wherein both Rand Rare chlorine atoms.4. The method according to claim 1 , wherein the cyclic silane of Formula (3) contains the cyclopentasilane in an amount of 80% or more by moles.5. The method according to claim 1 , wherein the solution is distilled at a temperature of 40° C. to 80° C.6. The method according to claim 5 , wherein the solution is distilled at a pressure of 0 to 30 Torr.7. The method according to claim 2 , wherein the solution is ...

Corrosion and fouling reduction in hydrochlorosilane production

Methods for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient hydrogen is added to a silicon tetrachloride process stream to inhibit iron (II) chloride formation and reduce iron suicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof. Trichlorosilane also may be added to the silicon tetrachloride process stream.

TRICHLORODISILANE

Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby. 1. A method of forming a silicon-containing film on a substrate , the method comprising subjecting a vapor of a silicon precursor comprising trichlorodisilane to deposition conditions in the presence of the substrate so as to form a silicon-containing film on the substrate.2. The method of wherein the silicon-containing film is an elemental silicon film claim 1 , a silicon carbon film claim 1 , a silicon nitrogen film claim 1 , or a silicon oxygen film.3. The method of wherein the silicon-containing film has a wet etch rate that is less than the wet etch rate for a silicon-containing film deposited from hexachlorodisilane.4. The method of comprising subjecting a first vapor of the silicon precursor and a second vapor comprising helium or hydrogen to deposition conditions in the presence of the substrate so as to form a silicon-containing film on the substrate claim 1 , wherein the silicon-containing film is an elemental silicon film.5. The method of comprising subjecting a first vapor of the silicon precursor and a second vapor of a carbon precursor comprising a hydrocarbon claim 1 , hydrocarbylsilane or a combination of a hydrocarbon claim 1 , hydrocarbylsilane to deposition conditions in the presence of the substrate so as to form a silicon-containing film on the substrate claim 1 , wherein the silicon-containing film is a silicon carbon film.6. The method of comprising subjecting a first vapor of the silicon precursor and a second vapor of a nitrogen precursor comprising molecular nitrogen claim 1 , ...

Synthesis methods for halosilanes

Disclosed are methods of selectively synthesizing inorganic silanes, such as halosilane and dihalosilane, comprising the step of reacting the halide or halogen (i.e., HX or X 2 wherein X is Cl, Br, or I) with RSiH 3 , wherein R is an unsaturated C4 to C8 cyclic hydrocarbon or heterocycle group, provided that a C6 cyclic aromatic includes at least one hydrocarbyl ligand, in the presence of a catalyst, to produce RH and the inorganic silane having the formula Si x H a X b , wherein x=1-4; a=1-9; b=1-9; and a+b=2x+2.

METHOD OF PREPARING IODOSILANES AND COMPOSITIONS THEREFROM

Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as HSiIand HSiI, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum. 2. The method of claim 1 , wherein y is 2.4. The method of claim 3 , wherein z is 1 and w is 1.5. The method of claim 4 , wherein M is Li or Na.6. The method of claim 4 , wherein M is chosen from NH claim 4 , (CH)N claim 4 , (CHCH)N claim 4 , (CHCHCH)N claim 4 , and (CHCHCHCH)N.7. The method of wherein M is Mgor Ca.8. The method of claim 1 , wherein the iodide reactant comprising aluminum is aluminum triiodide.9. The method of claim 8 , wherein the aluminum triiodide is generated in situ from aluminum metal and iodine.10. The method of claim 3 , wherein the compound of formula (A) is chosen from LiAl(I) claim 3 , NaAl(I) claim 3 , KAl(I) claim 3 , Mg[Al(I)] claim 3 , Ca[Al(I)] claim 3 , LiAl(Cl)I claim 3 , LiAlCl(I) claim 3 , NaAl(Cl)I claim 3 , NaAlCl(I) claim 3 , KAl(Cl)I claim 3 , KAlCl(I) claim 3 , Mg[Al(Cl)I] claim 3 , Mg[Al(Cl)(I)] claim 3 , Ca[Al(Cl)I] claim 3 , Ca[Al(Cl)(I)] claim 3 , NHAl(I) claim 3 , NHAl(Cl)I claim 3 , NHAl(Cl)(I) claim 3 , NaAlI claim 3 , NaAlI claim 3 , and Al(I).12. The method of claim 11 , wherein the iodide reactant is a compound of the formula NaAlI.13. The method of claim 11 , wherein the iodide reactant is a compound of the formula NaAlI.14. The method of claim 3 , wherein the iodide reactant comprising aluminum is generated in situ from{'sub': 3', 'q, 'sup': '+q', 'a. AlXand MX;'}{'sup': o', '+q, 'sub': 2', 'q, 'b. Al, X, and MX;'}{'sub': 3', '2, 'sup': 'o', 'c. AlX, M, and X; or'}{'sup': o', 'o, 'sub': '2', 'd. Al, M, and X, wherein q represents the valence of M.'}15. The method of claim 1 , wherein the compound of formula (I) is chosen from{'sub': '3', 'SiHI,'}{'sub': 2', '2, 'SiHI,'}{'sub': '3', 'SiHI,'}{'sub': 2', '3, 'SiHCHI,'}{'sub': 2', '2', '3, 'SiH(CHCH)I,'}{'sub': 2', '2', '2', ' ...

MANUFACTURING METHOD OF HIGH-PURITY CHLOROPOLYSILANE

[Problem] Chloropolysilane having a low metallic impurity concentration has been required to be obtained in order to be used for semiconductor applications. However, it is difficult by distillation to remove impurities such as a titanium compound having a vapor pressure close to that of chloropolysilane and an aluminum compound having a sublimating property. Meanwhile, when the content of metallic impurities such as aluminum and titanium reduces in metallic silicon that is a raw material, chlorination reaction is less likely to occur unless a reaction temperature is raised and that causes equipment to be restricted. It is found that a chlorination reaction can be carried out at a relatively low temperature by heating a mixture of granular metallic silicon and metallic copper or a copper compound in an inert atmosphere even when the metallic silicon has a high purity and does not contain aluminum and titanium and that chloropolysilane of high purity can be obtained by further adding metallic silicon as needed after the chlorination reaction is started. 2. The manufacturing method of chloropolysilane according to claim 1 , wherein the metallic silicon is granular metallic silicon having a volume median diameter claim 1 , which is measured with a laser diffraction type particle size distribution profiler claim 1 , of 1 μm or larger and 5 mm or smaller claim 1 , and the metallic copper or the copper compound is a particle having a median diameter of 1 μm or larger and 0.2 mm or smaller.3. The manufacturing method of chloropolysilane according to claim 2 , wherein metallic silicon is added in the second process without being subjected to the first process claim 2 , an amount of metallic elements other than silicon contained in the metallic silicon being 2% by mass or smaller with respect to a total mass of the metallic silicon claim 2 , and among the metallic elements other than silicon claim 2 , amounts of Al and Ti being 0.5% or smaller and 0.1% or smaller by mass ...

Method and apparatus for production of silane and hydrohalosilanes

Silane and hydrohalosilanes of the general formula H y SiX 4-y (y=1, 2, or 3) are produced by reactive distillation in a system that includes a fixed-bed catalytic redistribution reactor that can be back-flushed during operation.

Pentachlorodisilane production method and pentachlorodisilane produced by same

[Problem] To provide a novel production method for pentachlorodisilane and to obtain pentachlorodisilane having a purity of 90 mass % or more by carrying out this production method. [Solution] A production method provided with: a high-temperature reaction step in which a raw material gas containing vaporized tetrachlorosilane and hydrogen is reacted at a high temperature in order to obtain a reaction product gas containing trichlorosilane; a pentachlorodisilane generation step in which the reaction product gas obtained in the high-temperature reaction step is brought into contact with a cooling liquid obtained by circulative cooling of a condensate that is generated by cooling the reaction product gas, the reaction product gas is quickly cooled, and pentachlorodisilane is generated within the condensate; and a recovery step in which the generated pentachlorodisilane is recovered.

SiH-Free Vinyldisilanes

A SiH-free vinyldisilane compound, which is free of (lacks) a silicon-bonded hydrogen atom. The use of the SiH-free vinyldisilane compound, or a collection of such compounds, as a starting material or precursor for synthesizing or making silicon-heteroatom compounds. The silicon-heteroatom compounds synthesized therefrom; films of and devices containing the silicon-heteroatom compounds; methods of making the SiH-free vinyldisilane compound, silicon-heteroatom compounds, films, and devices; and uses of the SiH-free vinyldisilanes, silicon-heteroatom compounds, films, and devices. 1. A SiH-free vinyldisilane compound independently consisting of 6 silicon-bonded substituents selected from 1 to 5 silicon-bonded vinyl groups and 5 to 1 silicon-bonded substituents , respectively , independently selected from silicon-bonded chlorine atoms and silicon-bonded dialkylamino groups; with the proviso that when there is only 1 silicon-bonded vinyl group , there is at least 1 silicon-bonded dialkylamino group.2. The SiH-free vinyldisilane compound of wherein the silicon-bonded substituents consist of 1 to 5 silicon-bonded vinyl groups and 5 to 1 silicon-bonded chlorine atoms claim 1 , respectively.3. The SiH-free vinyldisilane compound of that is a per(chloro claim 2 ,vinyl)disilane selected from: 1 claim 2 ,1-divinyl-1 claim 2 ,2 claim 2 ,2 claim 2 ,2-tetrachlorodisilane; 1 claim 2 ,2-divinyl-1 claim 2 ,1 claim 2 ,2 claim 2 ,2-tetrachlorodisilane; 1 claim 2 ,1 claim 2 ,1-trichloro-2 claim 2 ,2 claim 2 ,2-trivinyldisilane; and 1 claim 2 ,1 claim 2 ,2-trichloro-1 claim 2 ,2 claim 2 ,2-trivinyldisilane.4. The SiH-free vinyldisilane compound of wherein the silicon-bonded substituents consist of 1 to 5 silicon-bonded vinyl groups claim 1 , 4 to 0 silicon-bonded chlorine atoms claim 1 , and 5 to 1 silicon-bonded dialkylamino groups claim 1 , respectively.5. The SiH-free vinyldisilane compound of wherein the silicon-bonded substituents consist of 1 to 5 silicon-bonded vinyl groups and ...

Purification of chlorosilanes by means of distillation and adsorption

Separation of chlorosilane mixtures containing boron, arsenic, and/or phosphorus impurities is facilitated by a distillative separation using at least one divided column, with recycle streams to a first column being passed through an external absorbent for the impurities.

METHOD FOR HYDROGENATING HIGHER HALOGEN-CONTAINING SILANE COMPOUNDS

The present invention relates to a continuous process for hydrogenating halogen-containing silane compounds having at least three silicon atoms, in which at least one halogen-containing silane compound having at least three silicon atoms and at least one hydrogenating agent are converted continuously to form at least one hydridosilane compound having at least 3 silicon atoms and oxidized hydrogenating agent, and wherein oxidized hydrogenating agent is withdrawn and reduced, and the reaction product of this reduction reaction is sent back to the hydrogenation, to the hydridosilane compounds obtainable by this process and to the use thereof. 1. A continuous process for hydrogenating halogen-containing silane compounds having at least three silicon atoms , comprising:(i) continuously convertingat least one halogen-containing silane compound having at least three silicon atoms and at least one hydrogenating agentto format least one hydridosilane compound having at least 3 silicon atoms and an oxidized hydrogenating agent;(ii) withdrawing and reducing the oxidized hydrogenating agent, and(iii) feeding back the reduced oxidized hydrogenating agent to (i).2. The process according to claim 1 , wherein the halogen-containing silane compound has the generic formula SiXwhere 3≦n≦10 and X=F claim 1 , Cl claim 1 , Br claim 1 , and/or I.3. The process according to claim 2 , wherein the halogen-containing silane compound is SiCl.4. The process according to claim 1 , wherein the proportion of the at least one halogen-containing silane compound ranges from 10-30% by weight based on the total mass of the components fed in.5. The process according to claim 1 , wherein the hydrogenating agent is selected from the group of compounds consisting of LiAlH claim 1 , NaBHand i-BuAlH.6. The process according to claim 1 , wherein the hydrogenating agent in the reduced state is metered in H equivalent proportions of 1.0 to 1.5 based on the sum total of halogen atoms to be hydrogenated.7. The ...

METHOD FOR THE PRODUCTION OF LINEAR, CYCLIC AND/OR CAGE-TYPE PERHALOGENATED OLIGOSILYL AND POLYSILYL ANIONS

The present invention relates to a process for the preparation of linear, cyclic and/or cage-type perhalogenated oligosilyl and polysilyl anions by reacting perhalogenated monosilanes, oligosilanes or polysilanes with organosubstituted ammonium and/or phosphonium halides at temperatures ranging from −80° C. to 85° C., preferably −80° C. to 60° C., and to oligosilyl and polysilyl anions prepared according to that process. 1. A process for the preparation of linear , cyclic and/or cage-type perhalogenated oligosilyl and polysilyl anions by reacting perhalogenated monosilanes , oligosilanes or polysilanes with one or more of organosubstituted ammonium and phosphonium halides at temperatures ranging from −80° C. to 85° C.2. The process as claimed in claim 1 , in which there is a stoichiometric ratio of the perhalogenated monosilanes claim 1 , oligosilanes or polysilanes and the one or more organosubstituted ammonium and phosphonium halides in a range from 50:1 to 1:5.3. The process as claimed in claim 1 , wherein an additional Lewis base is added.4. The process as claimed in claim 1 , wherein it is carried out in a temperature range from −80° C. to −30° C.5. The process as claimed in claim 1 , wherein it is carried out in a temperature range from −10° C. to 85° C.6. The process as claimed in claim 1 , wherein it is carried out in a temperature range from 0° C. to 60° C. claim 1 , and the perhalogenated polysilane is reacted.7. The process as claimed in claim 1 , wherein the stoichiometric ratio of the perhalogenated monosilanes claim 1 , oligosilanes or polysilanes and the one or more organosubstituted ammonium and phosphonium halides is in a range from 50:1 to 1:1.8. The process as claimed in claim 1 , wherein a sub-stoichiometric amount of the one or more organosubstituted ammonium and phosphonium halides is added.9. The process as claimed in claim 1 , wherein the perhalogenated oligosilyl and polysilyl anions are converted into corresponding uncharged H-substituted ...

METHOD FOR PROCESSING FINELY DIVIDED SOLIDS DURING PRODUCTION OF CHLOROSILANES

The invention provides a method for the processing of finely divided solids during the production of chlorosilanes, which is characterized in that the finely divided solids are hydraulically pressed to give bodies of increased density. Moreover, also provided is the compact obtained by the process according to the invention which is characterized by a filling factor of the finely divided solids to be hydraulically pressed of 3.9 to 4.5. 1. A process for processing finely divided solids during production of chlorosilanes ,the process comprising hydraulically pressingthe finely divided solids to obtain bodies of increased density.2. The process as claimed in claim 1 , comprising employing a pressing vacancy which is a cylindrical sheath comprising ceramic.3. The process as claimed in claim 1 , where a pressing pressure is applied which is at most 14 kN/cm.4. The process as claimed in claim 3 , wherein the pressing pressure is applied by{'sup': '2', 'the pressure being initiated starting at zero with a pressing rate from 0.1 to 1 kN/cms,'}until the pressing pressure is reached, and thenheld for a period from 0.5 to 1.5 s,and subsequentlyreducing the pressing rate to zero over a period from 0.5 to 1.5 s.5. The process as claimed in claim 4 , further comprising carrying out a deaeration stroke claim 4 ,wherein for each deaeration stroke,{'sub': 1i', '1', '1f, 'an initial pressure p, which is at most as great as the pressing pressure, is reduced over a period Δfrom 0.5 to 1.5 s, to a value p, and'}{'sub': 1f', '1, 'pis held for a period δfrom 0 to 1 s,'}and thenthe pressure is initiated until the pressing pressure is reached.6. The process as claimed in claim 5 , whereintwo deaeration strokes a and b are carried out, and{'sub': 1a', '1a', '1a, 'a at an initial pressure p, with the periods Δand δ,'}{'sub': 1b', '1b', '1b, 'b at an initial pressure p, with the periods Δand δ,'}{'sub': 1a', '1b, 'and pand pare identical or different,'}{'sub': 1a', '1b, 'and the periods Δand ...

PROCESS FOR PREPARING OCTACHLOROTRISILANE AND HIGHER POLYCHLOROSILANES WITH UTILIZATION OF HEXACHLORODISILANE

A controlled preparation of octachlorotrisilane and higher polychlorosilane such as DCTS and DCPS from monomeric chlorosilane, proceeds by exposing the chlorosilane to a nonthermal plasma and recycling chlorosilane that has not been converted to octachlorotrisilane into the plasma. 1. A process for preparing octachlorotrisilane , a higher polychlorosilane or a mixture thereof , said process comprising:{'sub': g', '4', '3', '4', '3, 'a) forming a nonthermal plasma by excitation by an AC voltage of base frequency fin a gas which is within a plasma reactor and which comprises SiCl, HSiCl, or a mixture of thereof, to obtain a resulting mixture comprising hexachlorodisilane, octachlorotrisilane, a higher polychlorosilane, SiCland HSiCl, and'}{'sub': 4', '3, 'b) pumping the resulting mixture out of the plasma into a cooler, which is a condenser with a vacuum vessel, and cooling the resulting mixture down to a temperature of not more than 0° C., condensing out the components SiCl, HSiCl, hexachlorodisilane, octachlorotrisilane, the higher polychlorosilane or mixtures thereof in the cooler, and'}c) conducting the components into an evaporator, evaporating the components in the evaporator and then recycling at least a portion of the components into the nonthermal plasma of step a, and at the same timed) collecting the non-recycled higher polychlorosilane and at least a portion each of the hexachlorodisilane and octachlorotrisilane obtained in step b in a collecting vessel, ande) subjecting a bottoms mixture obtained in step d to a distillation, wherein hexachlorodisilane is drawn off and conducted into the nonthermal plasma of step a, andf) collecting the mixture of octachlorotrisilane and higher polychlorosilane which remains after the distillation.2. The process according to claim 1 , wherein the temperature in the gas is set within the range from −60° C. to 200° C. claim 1 , more preferably from 80° C. to 120° C.3. The process according to claim 1 , wherein the ...

Method of Producing Silicon Hydride Oxide-Containing Organic Solvent

A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane. 1. method of producing a silicon hydride oxide-containing organic solvent comprising:blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof.2. The method according to claim 1 , wherein the silicon hydride comprises a cyclic silane.3. The method according to claim 1 , wherein the silicon hydride comprises cyclopentasilane.4. The method according to claim 1 , wherein the silicon hydride oxide contains a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %.6. The method according to claim 5 , further comprising claim 5 , after obtaining the solution containing the cyclic silane expressed by Formula (2) claim 5 , distilling the solution.7. The method according to claim 1 , wherein the organic solvent contains the polymer of the silicon hydride.8. The method according to claim 1 , wherein the oxygen-containing gas is air.9. The method according to claim 7 , further comprising generating the polymer of the silicon hydride by contacting the silicon hydride with metallic rhodium in an inert atmosphere. The ...

FLUIDIZED BED REACTOR

Provided is a fluidized bed reactor () that makes it possible to stably measure a temperature distribution in the fluidized bed reactor () while no damage is caused to a temperature measuring section. Provided is a fluidized bed reactor () configured to generate trichlorosilane by reacting metallurgical grade silicon powder and hydrogen chloride gas, the fluidized bed reactor () including: a reaction vessel (); and a plurality of temperature measuring sections (), provided on an outer surface of the reaction vessel (), each for measuring a temperature inside the reaction vessel (). 1. A fluidized bed reactor configured to generate trichlorosilane by reacting metallurgical grade silicon powder and hydrogen chloride gas , the fluidized bed reactor comprising:a reaction vessel; anda plurality of temperature measuring sections, provided on an outer surface of the reaction vessel, each for measuring a temperature inside the reaction vessel.2. The fluidized bed reactor as set forth in claim 1 , wherein the outer surface of the reaction vessel on which outer surface the plurality of temperature measuring sections are provided is located in a vicinity of a gas supply port provided in a lower part of the reaction vessel.3. The fluidized bed reactor as set forth in claim 2 , wherein the plurality of temperature measuring sections are provided along an entire circumference of the outer surface of the reaction vessel.4. A fluidized bed reactor as set forth in claim 2 , further comprising:a heating medium pipe provided above the gas supply port in the reaction vessel,the plurality of temperature measuring sections including a temperature measuring section that is provided in a region in which no heating medium pipe is provided.5. The fluidized bed reactor as set forth in claim 4 , wherein the plurality of temperature measuring sections further include a temperature measuring section that is provided in a region in which the heating medium pipe is provided.6. A method for ...

CHLORODISILAZANES

Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices. 1. 1 ,1 ,1 ,3 ,3-pentachlorodisilazane.2. A method of making 1 ,1 ,1 ,3 ,3-pentachlorodisilazane , the method comprising:{'sub': '3', 'contacting 1,1,1-trichloro-3,3,3-trimethyldisilazane with trichlorosilane (HSiCl) to give the 1,1,1,3,3-pentachlorodisilazane.'}3. A method of treating an initial surface of a substrate , the method comprising:{'sup': 1', '2', '1', '2, 'sub': 2', '2, 'a first contacting step comprising contacting the initial surface of the substrate with a vapor of a chlorodisilazane of formula (I): XClSiN(H)SiClX(I), wherein each of Xand Xindependently is H or Cl, using a first deposition method to give a treated surface on the substrate.'}4. The method of claim 3 , further defined as a method of making a silicon-heteroatom compound claim 3 , the method further comprising:a second contacting step comprising contacting the initial surface or the treated surface of the substrate with a vapor or plasma of a precursor material containing nitrogen atom(s), oxygen atom(s), carbon atom(s), or a combination of any two or more atoms thereof using a second deposition method to give a product comprising a silicon-heteroatom compound formed with or on the initial or treated surface of the substrate.5. The method of claim 3 , wherein the chlorodisilazane of formula (I) is 1 claim 3 ,1 claim 3 ,3 claim 3 ,3-tetrachlorodisilazane or 1 claim 3 ,1 claim 3 ,1 claim 3 ,3 claim 3 ,3 claim 3 ,3-hexachlorodisilazane.6. The method of claim 3 , wherein the chlorodisilazane of formula (I) is 1 claim 3 ,1 claim 3 ,1 claim 3 ,3 claim 3 ,3-pentachlorodisilazane.7. The method of claim 4 , wherein the precursor material containing nitrogen atom(s) is molecular nitrogen ...

METHOD FOR PRODUCING PERHALOGENATED HEXASILANE ANION AND METHOD FOR PRODUCING A CYCLIC SILANE COMPOUND

The present invention relates to a process for the production of perhalogenated hexasilane anion by reacting halogenated monosilane in the presence of organosubstituted ammonium and/or phosphonium halide at temperatures in a range from 100 to 120° C., wherein no solvent is used, and a process for the production of a cyclic silane compound of the formula SiR, by reacting [X][SiCl] with AlRin at least one organic solvent, wherein R is chlorine or methyl and X, the same or different, is a counter-cation and is preferably selected from organosubstituted ammonium, organosubstituted phosphonium, alkali metal ions and [(PEDETA)(HSiCl)]+. 1. A process for the production of perhalogenated hexasilane anion by reacting halogenated monosilane in the presence of organosubstituted ammonium and/or phosphonium halide at temperatures in a range from 100 to 120° C. , wherein no solvent is used.2. The process for the production of perhalogenated hexasilane anion as claimed in claim 1 , wherein the halogenated monosilane is trichlorosilane or dichlorosilane.3. The process for the production of perhalogenated hexasilane anion as claimed in claim 1 , wherein no additional Lewis base is added.4. The process for the production of perhalogenated hexasilane anion as claimed in claim 1 , wherein the reaction time is 12 to 96 hours.5. The process for the production of perhalogenated hexasilane anion as claimed in claim 1 , wherein the ratio of halogenated monosilane to organosubstituted ammonium and/or phosphonium halide is 3:1 to 50:1.6. The process for the production of perhalogenated hexasilane anion as claimed in claim 1 , wherein the organosubstituted ammonium and/or phosphonium halide is selected from [nBuN]Cl claim 1 , [EtN]Cl claim 1 , [PhP]Cl and [nBuP]Cl.7. The process for the production of perhalogenated hexasilane anion as claimed in claim 1 , wherein hydrogen (H) is obtained as a by-product in the production of the hexasilane anion.8. A process for the production of a cyclic ...

PREPARATION OF Si-H CONTAINING IODOSILANES VIA HALIDE EXCHANGE REACTION

Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed. 1. A method of synthesizing a Si—H containing iodosilane having the formula SiHIor N(SiHI) , wherein w=1 to 3 , x+z=2w+2 , x=1 to 2w+1 , z=1 to 2w+1 , each a is independently 0 to 3 , each c is independently 0 to 3 , a+c=3 , provided that at least one a is 1 and at least one c is 1 , the method comprising:{'sub': w', 'x', 'z', 'a', 'c', '3', 'w', 'x', 'z', 'a', 'c', '3, 'contacting a halosilane reactant having the formula SiHXor N(SiHX), wherein X is Cl or Br, and w, x, z, a, and c are as defined above, with an alkali metal halide reactant having the formula MI, wherein M is Li, Na, K, Rb, or Cs, to produce a combination of MX and SiHIor N(SiHI); and'}{'sub': w', 'x', 'z', 'a', 'c', '3, 'isolating the mixture to produce the Si—H containing iodosilane having the formula SiHIor N(SiHI).'}2. The method of claim 1 , wherein the halosilane reactant is SiHCl.3. The method of claim 1 , wherein the halosilane reactant is SiHCl.4. The method of claim 1 , wherein the halosilane reactant is (SiH)N(SiHCl).5. The method of claim 1 , wherein the alkali metal halide reactant is LiI.6. The method of claim 2 , wherein the alkali metal halide reactant is LiI.8. The Si-containing film forming composition delivery device of claim 7 , wherein the Si-containing film forming composition comprises between approximately 0 ppmw and approximately 100 ppmw C when y or b or n=0.9. The Si-containing film forming composition delivery device of claim 8 , wherein the Si—H containing iodosilane is SiHI. The present application is a divisional of U.S. patent application Ser. No. 15/836,518, filed Dec. 8, 2017, which is a continuation-in-part of PCT Patent Application Serial No. PCT/US2017/033620 filed May 19, 2017, which claims the benefit of U.S. Provisional Application Ser. No. 62/338,882 filed May 19, 2016, and to Taiwan Patent Application No. 106139942 ...

METHOD FOR PRODUCING TRICHLOROSILANE AND DEVICE FOR PRODUCING TRICHLOROSILANE

A production method is a method for producing trichlorosilane, the method including opening and closing, with use of a non-sliding valve (b to b), an entry channel (f), an exit channel (f), a discharge channel (f), and a discharge channel (f) through each of which metallurgical grade silicon powder flows in a system for producing the trichlorosilane, the non-sliding valve including a valve body capable of being rotated without coming into contact with a valve seat. 1. A method for producing trichlorosilane , the method comprising:opening and closing a channel with use of a non-sliding valve, the channel being a channel through which metallurgical grade silicon powder flows in a system for producing the trichlorosilane, the non-sliding valve including a valve body capable of being rotated without coming into contact with a valve seat.2. The method according to claim 1 , further comprising:causing the metallurgical grade silicon powder and hydrogen chloride gas to react with each other for production of the trichlorosilane.3. The method according to claim 2 , whereinthe channel includes an entry channel configured to guide the metallurgical grade silicon powder into a reaction vessel for causing the metallurgical grade silicon powder and the hydrogen chloride gas to react with each other for production of the trichlorosilane, andthe entry channel is opened and closed with use of the non-sliding valve.4. The method according to claim 2 , whereinthe channel includes an exit channel through which the metallurgical grade silicon powder taken out from a lower portion of a reaction vessel flows, the reaction vessel being a reaction vessel for causing the metallurgical grade silicon powder and the hydrogen chloride gas to react with each other for production of the trichlorosilane,the exit channel is present between the reaction vessel and a container tank configured to contain the metallurgical grade silicon powder taken out from the lower portion of the reaction vessel, ...

FLUIDIZED BED REACTION CONTAINER AND METHOD FOR PRODUCING TRICHLOROSILANE

To provide a fluidized-bed reaction vessel and a trichlorosilane production method each of which can reduce corrosion and wear of a reaction container inner wall, a fluidized-bed reaction vessel causes metallurgical grade silicon powder and hydrogen chloride gas to react with each other for production of trichlorosilane. The fluidized-bed reaction vessel includes a plurality of ejection nozzles () standing on a distributor plate () as a bottom surface of a container body. The ejection nozzles () each have a gas ejection opening () configured to allow hydrogen chloride gas to be ejected sideways. The plurality of ejection nozzles () include a first ejection nozzle () adjacent to an outer wall () of the container body, the first ejection nozzle () having a gas ejection opening () in such a pattern as to prevent hydrogen chloride gas from being ejected toward the outer wall (). 1. A fluidized-bed reaction vessel configured to cause metallurgical grade silicon powder and hydrogen chloride gas to react with each other for production of trichlorosilane , the fluidized-bed reaction vessel comprising:a container body having a bottom surface; anda plurality of ejection nozzles standing on the bottom surface,the ejection nozzles each having at least one gas ejection opening configured to allow the hydrogen chloride gas to be ejected sideways,the plurality of ejection nozzles including at least one first ejection nozzle adjacent to an outer wall of the container body, the at least one gas ejection opening of the at least one first ejection nozzle being configured to prevent the hydrogen chloride gas to be ejected toward the outer wall.2. The fluidized-bed reaction vessel according to claim 1 , whereinthe plurality of ejection nozzles include at least one second ejection nozzle present inward of the at least one first ejection nozzle, andthe at least one gas ejection opening of the at least one second ejection nozzle includes a plurality of gas ejection openings configured to ...

METHOD FOR TREATMENT OF HEXACHLORODISILANE AND HYDROLYZED PRODUCT

A method for treatment of a hexachlorodisilane and its hydrolyzed product is disclosed. It comprises adding a hexachlorodisilane or its hydrolyzed product into a sulfuric acid solution for reaction. 1. A method for treatment of a hexachlorodisilane and its hydrolyzed product , comprising adding a hexachlorodisilane or its hydrolyzed product into a sulfuric acid solution for reaction.2. As the method for treatment of a hexachlorodisilane and its hydrolyzed product claimed in claim 1 , wherein the hexachlorodisilane comprises pure hexachlorosilane liquid claim 1 , pure hexachlorosilane vapor claim 1 , or diluted hexachlorosilane vapor.3. As the method for treatment of a hexachlorodisilane and its hydrolyzed product claimed in claim 1 , wherein the sulfuric acid solution has a concentration ranging from 1 wt % to 98 wt %.4. As the method for treatment of a hexachlorodisilane and its hydrolyzed product claimed in claim 3 , wherein the sulfuric acid solution has a concentration ranging from 20 wt % to 90 wt %. The present invention relates to a method for treatment of a hexachlorodisilane and its hydrolyzed product, especially for a disposal of hexachlorodisilane vapor, liquid and hydrolyzed residues by using sulfuric acid for reaction so as to prevent generation of shock sensitive powders.Hexachlorodisilane is a clear liquid that hydrolyzed with water or moisture in air and the resulting products are shock sensitive and can be ignited upon impact or flame to generate explosive reaction. Hexachlorodisilane is used extensively in the manufacturing of advanced semiconductor devices through chemical vapor deposition process. It is necessary to dispose the remaining vapor from such process. In the synthesis and purification processes of hexachlorodisilane, it is also necessary to dispose properly the process exhaust that also contains hexachlorodisilane. Upon accidental release or leak of hexachlorodisilane liquid, hydrolysis with moisture in the air will occur and it is ...

PREPARATION OF SI-H CONTAINING IODOSILANES VIA HALIDE EXCHANGE REACTION

Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed. 2. The Si-containing film forming composition delivery device of claim 1 , wherein the Si-containing film forming composition comprises between approximately 0 ppmw and approximately 100 ppmw C when y or b or n=0.3. The Si-containing film forming composition delivery device of claim 2 , wherein the Si—H containing iodosilane is SiHI. The present application is a divisional of U.S. patent application Ser. No. 16/460,562, filed Jul. 2, 2019, which is divisional of U.S. patent application Ser. No. 15/836,518, filed Dec. 8, 2017, which is a continuation-in-part of PCT Patent Application Serial No. PCT/US2017/033620 filed May 19, 2017, which claims the benefit of U.S. Provisional Application Ser. No. 62/338,882 filed May 19, 2016, and to Taiwan Patent Application No. 106139942 filed Nov. 17, 2017, all herein incorporated by reference in their entireties for all purposes.Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.Halosilane chemicals find many uses in industry. In particular, iodosilane precursors, such as diiodosilane (SiHI), are used to deposit a variety of silicon containing films for use in semiconductor manufacturing processes.Emeléus et al., disclose synthesis of diiodosilane (SiHI) by reaction of Silane (SiH), Hydrogen Iodide (HI), and aluminum iodide (AlI). Derivatives of monosilane. Part II. The Iodo compounds: Emeleus, H. J.; Maddock, A. G.; Reid, C., 1941, 353-358). The reaction produces the desired SiHIreaction product along with Iodosilane (SiHI), Triiodosilane (SiHI), and tetraiodosilane (SiI). Id. at p. 354.Keinan et al. disclose the reaction of iodine and phenylsilane in a 1:1 molar ratio in the presence of traces of ethyl acetate at −20° C. produces 1 mol of SiHIand 1 mol of benzene. J. Org. Chem., Vol. 52, No. 22, ...

System and process for producing monosilane

A description is given of a system and a process for producing monosilane (SiH 4 ) by catalytic disproportionation of trichlorosilane (SiHCl 3 ). The trichlorosilane is reacted in a reaction column (100) in the presence of a catalyst and subsequently purified in a rectification column (109). Between a reactive/distillation reaction zone (104; 105) in the reaction column (100) and the rectification column (109), one or more condensers (103) are arranged in which monosilane-containing reaction product from the reaction column (100) is partly condensed. However, this concerns solely condensers which are operated at a temperature above ‑40°C.

Synthesising a polysilane

A polysilane of formula -(-SiHn-)-x where n is 1 or 2 and x is large (10, 20 or more) may be a precursor of amorphous silicon films and is synthesised by treating SiHmX4-m, where m is 1, 2 or 3 and X is halogen, preferably SiH2C12 or SiHC13, with lithium suspended in a liquid inert to the reagents and non-solvent for the polysilane, preferably tetrahydrofuran.

氯二矽氮烷

氯二矽氮烷；從其合成的矽雜原子化合物；含有該等矽雜原子化合物之裝置；製造該等氯二矽氮烷、該等矽雜原子化合物、及該等裝置的方法；以及該等氯二矽氮烷、矽雜原子化合物、及裝置的用途。

Method For Producing Trichlorosilane By Thermal Hydration Of Tetrachlorosilane

Efficient production of trichlorosilane from tetrachlorosilane and hydrogen is effected by reaction at high temperatures over short residence times followed by rapidly cooling the product mixture in a heat exchanger, recovered heat being employed to heat the reactant gases.

Method for producing trichlorosilane and apparatus for producing trichlorosilane

An apparatus comprising: a reaction chamber 2 into which silicon tetrachloride and hydrogen is introduced for producing a reaction product gas containing trichlorosilane and hydrogen chloride by a reductive reaction at a temperature of not lower than 800° C.; a reaction product gas discharging device 4 that discharges the reaction product gas in the reaction chamber 2 to the outside; a cooling gas introducing device 5 that mixes hydrogen, silicon tetrachloride, or hydrogen chloride in the reaction product gas being discharged by the reaction product gas discharging device 4 to cool the reaction product gas.

Purification of silicon compounds

Process for the hydrochlorination of elemental silicon

Process for the preparation of anion exchange resin for use in the redistribution of chlorosilanes

The process of this invention is directed to the treatment of solid anion exchange resin with dry hydrogen chloride to enhance the ability of the resin to redistribute chlorosilanes.

Process for cleaning halosilanes

Chlorosilane disproportionation catalyst and method for producing a silane compound by means of the catalyst

A chlorosilane disproportionation catalyst comprising a tertiary amine of the formula: ##STR1## where each R represents an aliphatic hydrocarbon group and the sum of carbon atoms in the three aliphatic hydrocarbon groups as R is 12 or more, and a tertiary amine hydrochloride of the formula: ##STR2## where R is as defined above.

Process for the preparation of HSiCl 3 by catalytic hydrodehalogenation of SiCl 4

Die Erfindung betrifft ein Verfahren zur katalytischen Hydrodehalogenierung von SiCl¶4¶ zu HSiCl¶3¶ in Gegenwart von Wasserstoff, indem man bei einer Temperatur im Bereich von 300 bis 1000 DEG C als Katalysator mindestens ein Metall oder Metallsalz aus der Reihe der Elemente der 2. Hauptgruppe des Periodensystems der Elemente (PSE) einsetzt, insbesondere ein solches, das unter diesen Bedingungen stabile Metallchloride bildet. The invention relates to a process for the catalytic hydrodehalogenation of SiCl¶4¶ to HSiCl¶¶¶ in the presence of hydrogen, by reacting at a temperature in the range of 300 to 1000 ° C as catalyst at least one metal or metal salt from the series of elements of the 2nd Main Group of the Periodic Table of the Elements (PSE), in particular one which forms stable metal chlorides under these conditions.

三氯矽烷之製造方法，三氯矽烷之製造裝置，以及多結晶矽之製造方法

Method for the production of trichlorosilane

The invention relates to a method, wherein a tetrachlorosilane- containing reactant gas is reacted with a hydrogen-containing reactant gas at a temperature from 900°C to 1300°C. A trichlorosilane-containing product mixture is produced, which is characterized in that the reaction takes place at a supercritical pressure of the reactant gases.

三氯硅烷的制备方法和三氯硅烷的制备装置

本发明涉及一种三氯硅烷的制备方法和三氯硅烷的制备装置。一种装置，其具备：向内部导入四氯硅烷和氢，通过在800℃以上进行还原反应，生成三氯硅烷和氯化氢的反应生成气体的反应室2；将反应室2内部的反应生成气体导出到外部的反应生成气体导出设备4；以及向反应生成气体导出设备4所导出的反应生成气体中混入氢、四氯硅烷或氯化氢，来冷却反应生成气体的冷却气体导入设备5。

一种制备四氯化硅的方法

本发明公开了一种制备四氯化硅的方法。该方法包括以下步骤：将原料二氧化硅、原料碳及催化剂放入反应器，将氯气、氧气通入到反应器中，600～1500℃反应生成四氯化硅。SiO 2 与C直接发生反应需要较高的温度，而且反应非常慢。应用本发明的技术方案，向反应体系中加入Cl 2 可以显著减低反应温度，并且可以加快反应的进行速度，而且由于该反应过程是放热反应，能够显著地降低生产四氯化硅的生产成本。另外，本发明的反应体系中的碳消耗掉了反应生成的氧，能有效地加快氯化反应的速度，从而也可以降低投资。

一种制备四氯化硅的反应器及应用

本发明公开了一种制备四氯化硅的反应器及应用。其中，该反应器包括：反应段，设置在反应段的底部的原料气进口，设置在反应段的顶部的原料入口，以及设置在反应段的顶部的反应后气出口。SiO 2 与C直接发生反应需要较高的温度，而且反应非常慢。应用本发明的反应器，氯气通过原料气进口通入到反应段，向反应体系中加入Cl 2 可以显著减低反应温度，并且可以加快反应的进行速度，而且由于该反应过程是放热反应，能够显著地降低生产四氯化硅的生产成本。另外，本发明的反应体系中的碳消耗掉了反应生成的氧，能有效地加快氯化反应的速度，从而也可以降低投资。

trichlorodisilane

트라이클로로다이실란을 포함하는, 침착용 규소 전구체 화합물; 규소 전구체 화합물과, 불활성 가스, 분자 수소, 탄소 전구체, 질소 전구체, 및 산소 전구체 중 적어도 하나를 포함하는, 필름 형성용 조성물; 상기 규소 전구체 화합물을 사용하여 기재(substrate) 상에 규소-함유 필름을 형성하는 방법, 및 이로써 형성된 상기 규소-함유 필름이 개시된다. silicon precursor compounds for deposition comprising trichlorodisilane; A composition for forming a film comprising a silicon precursor compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, a nitrogen precursor, and an oxygen precursor; A method of forming a silicon-containing film on a substrate using the silicon precursor compound, and the silicon-containing film thus formed are disclosed.

Chlorodisilazane

클로로다이실라잔; 그로부터 합성된 규소-헤테로원자 화합물; 규소-헤테로원자 화합물을 함유하는 디바이스; 클로로다이실라잔, 규소-헤테로원자 화합물, 및 디바이스의 제조 방법; 및 클로로다이실라잔, 규소-헤테로원자 화합물, 및 디바이스의 용도. Chlorodisilazane; A silicon-heteroatom compound synthesized therefrom; A device containing a silicon-heteroatom compound; Chlorodisilazane, a silicon-heteroatom compound, and a method of manufacturing a device; And the use of chlorodisilazane, silicon-heteroatom compounds, and devices.

氯二硅氮烷

本发明公开了氯二硅氮烷；由其合成的硅杂原子化合物；含有所述硅杂原子化合物的器件；制备所述氯二硅氮烷、所述硅杂原子化合物和所述器件的方法；以及所述氯二硅氮烷、所述硅杂原子化合物和所述器件的用途。

生产三氯硅烷的方法

本发明涉及一种方法，其中含四氯硅烷进料气体与含氢进料气体在900-1300℃的温度下反应。得到含三氯硅烷产物混合物。该方法的特征在于所述反应是在这些反应气体的超临界压力下进行的。

加热装置及与其相关的方法

本发明一般涉及加热装置及使用该加热装置的方法。在一些实施例中，加热装置包含具有中空圆柱形加热腔的压力壳、设置于该中空圆柱形加热腔中的环状遮热板、及至少一设置于该环状遮热板的内部容积中的加热组件。在另一实施例中，一种制备三氯硅烷的方法，包括以下步骤：引导具备四氯化硅的反应物流至加热装置中、令电流通过加热组件以加热该反应物流、及引导加热的该反应物流至反应器中。

Apparatus for manufacturing polysilicon

화학기상증착(CVD) 반응기를 이용한 폴리실리콘 제조 장치를 제공한다. 폴리실리콘 제조 장치는, 기판과 반응기 커버를 포함하는 반응 챔버와, 절연 부재를 매개로 기판에 관통 설치되며 전원에 연결되는 적어도 한 쌍의 전극과, 전극 척에 의해 한 쌍의 전극 각각에 결합되며 상단이 서로 연결되는 적어도 한 쌍의 필라멘트와, 기판 상에서 한 쌍의 전극 각각의 상면과 측면을 둘러싸는 전극 커버 및 전극 커버의 상면을 덮는 커버 쉴드를 구비한 커버 조립체를 포함한다. A polysilicon manufacturing apparatus using a chemical vapor deposition (CVD) reactor is provided. The polysilicon manufacturing apparatus comprises a reaction chamber including a substrate and a reactor cover, at least a pair of electrodes provided through the substrate via an insulating member and connected to a power source, and an electrode chuck A cover assembly having at least a pair of filaments whose upper ends are connected to each other and a cover shield covering an upper surface of the electrode cover and an electrode cover surrounding the upper and side surfaces of each of the pair of electrodes on the substrate.

三氯硅烷的制备方法和三氯硅烷的制备装置

本发明涉及三氯硅烷的制备方法和装置，所述三氯硅烷的制备方法包括：使四氯硅烷和氢在900℃～1900℃下反应、生成含有三氯硅烷和氯化氢的反应生成气体，将由反应室导出的反应生成气体冷却至300℃～800℃，由此使反应生成气体的冷却速度适当，防止生成四氯硅烷的逆反应和聚合物的副生，在该冷却的反应生成气体和导入到反应室2中的四氯硅烷或氢的至少一方之间进行热交换，进行预热。

Chlorodishirazan

Method of producing trichlorosilane through catalytic hydrohalogenation of silicon tetrachloride

FIELD: chemistry. SUBSTANCE: invention can be used in chemical and electronic industry. Trichlorosilane is produced through catalytic hydrohalogenation of silicon tetrachloride in the presence of hydrogen. The catalyst used is at least one metal or one metal salt, chosen from group two of the periodic table of elements. The reaction is carried out at temperature between 300 and 1000°C. EFFECT: design of an efficient method of producing trichlorosilane. 10 cl, 3 tbl, 3 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 371 388 (13) C2 (51) МПК C01B 33/107 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21), (22) Заявка: 2006141284/15, 01.03.2005 (24) Дата начала отсчета срока действия патента: 01.03.2005 (43) Дата публикации заявки: 27.05.2008 (56) Список документов, цитированных в отчете о поиске: DE 4108614 А1, 24.09.1992. RU 2147292 С1, 10.04.2000. RU 2122971 С1, 10.12.1998. JP 57140312 А, 30.08.1982. JP 1100011 А, 18.04.1989. 2 3 7 1 3 8 8 R U (86) Заявка PCT: EP 2005/050882 (01.03.2005) C 2 C 2 (85) Дата перевода заявки PCT на национальную фазу: 23.11.2006 (87) Публикация PCT: WO 2005/102927 (03.11.2005) Адрес для переписки: 105064, Москва, а/я 88, "Патентные поверенные Квашнин, Сапельников и партнеры", пат.пов. В.П.Квашнину, рег.№ 4 (54) СПОСОБ ПОЛУЧЕНИЯ ТРИХЛОРСИЛАНА КАТАЛИТИЧЕСКИМ ГИДРОГАЛОГЕНИРОВАНИЕМ ТЕТРАХЛОРИДА КРЕМНИЯ (57) Реферат: Изобретение может быть использовано в химической и электронной промышленности. Трихлорсилан получают каталитическим гидрогалогенированием тетрахлорида кремния в присутствии водорода. В качестве катализатора используют, по меньшей мере, один металл или одну соль металла, выбранного из элементов второй главной группы Периодической системы элементов. Реакцию проводят при температуре в пределах от 300 до 1000°С. 9 з.п. ф-лы, 3 табл. Ñòðàíèöà: 1 ru 2 3 7 1 3 8 8 (73) Патентообладатель(и): Дегусса АГ (DE) (45) Опубликовано: 27.10.2009 Бюл. № 30 R U (30) ...

生产三氯硅烷的系统和方法

本发明针对合成三氯硅烷的系统和方法。所公开的系统和方法可包括在三氯硅烷合成期间提高浆液中的固体浓度，从而回收或分离挥发的金属盐并减少由下游操作中的金属盐固化作用产生的阻塞。本发明可包括通过利用不可凝气体(如氢气)提高浆液流中的固体浓度而使氯硅烷组分挥发(而非加热来提高温度，从而使氯硅烷化合物发生汽化，并接着使挥发后的氯硅烷化合物冷凝)，可因此对能够降低浆液温度的蒸发条件具有促进作用。较低的浆液温度使得金属盐的挥发性较低，降低了转移至下游单元操作的可能性。

提纯三氯氢硅的方法

本发明公开了一种提纯三氯氢硅的方法。该方法包括以下步骤：S1，将三氯氢硅原料与氯气和氧气在光源催化下进行反应，得到的反应产物；S2，对反应产物进行精密过滤，将反应产物中的固体和反应液体产物分离；以及S3，将反应液体产物输入精馏塔脱除杂质、轻组分和重组分后得到三氯氢硅产品。应用本发明的技术方案，采用反应精馏工艺，将原料中的低氯含量的甲基氯硅烷通过反应转化为高氯含量的甲基氯硅烷，同时，将B、P等转化为高沸点络合物，再通过精馏进行分离，最终得到高纯的三氯氢硅。

Hermetic container for thermal conversion reaction

The present invention relates to a hermetic container for a thermal conversion reaction. The hermetic container according to the present invention comprises: a base plate on which utilities are installed; a bezel for forming an enclosed hot zone between the base plate and itself; a heater disposed in the hot zone; an inlet and an outlet for feeding and discharging a reaction gas into and from the hot zone; and a heat exchanger provided inside the bezel for allowing the reaction gas being fed into the hot zone via the inlet to absorb heat energy that is transferred to the bezel such that the temperature of the bezel cools down and also the reaction gas is fed into the hot zone in heated state. Accordingly, in the process of feeding the reaction gas into the hot zone through the heat exchanger provided inside the bezel, heat energy that is transferred from a heater of the hot zone to the bezel and then lost to outside is absorbed by the reaction gas being fed into the hot zone, such that the bezel is prevented from overheating to a temperature above the critical temperature; and because the reaction gas is heated by absorbing the heat energy that was lost to outside the bezel and then fed into the hot zone, power consumption of the heater can be lowered.

通过四氯化硅的催化加氢脱卤制备三氯甲硅烷的工艺

本发明涉及一种在氢的存在下将SiCl 4 催化加氢脱卤形成HSiCl 3 的工艺，其中选自元素周期表(PTE)第2主族元素的至少一种金属或金属盐在300－1000℃的温度下被用作催化剂。特别地，所述催化剂是一种在这些条件下会形成稳定的金属氯化物的金属或金属盐。

用于制造甲硅烷的装置和方法

描述了用于通过三氯硅烷(SiHCl 3 )的催化歧化来制造甲硅烷(SiH 4 )的装置和方法。三氯硅烷在反应塔(100)中在催化剂处转化并且紧接着在精馏塔(109)中提纯。在反应塔(100)中的反应/蒸馏的反应区域(104；105)和精馏塔(109)之间布置一个或多个冷凝器(103)，在该冷凝器(103)中来自反应塔(100)的含甲硅烷的反应产物部分冷凝。在此，然而仅涉及在温度高于-40℃时运行的冷凝器。