УСТРОЙСТВО ДЛЯ ЭПИТАКСИАЛЬНЫХ РЕАКЦИЙ

УСТРОЙСТВО ДЛЯ ВЫРАЩИВАНИЯ ЭПИТАКСИАЛЬНЫХ СЛОЕВ ПОЛУПРОВОДНИКОВЫХ СОЕДИНЕНИЙ

Устройство для выращивания эпитаксиальных слоев полупроводниковых соединений методом газотранспортных реакций, включающее вертикально установленный кварцевый реактор с подложкодержателем внутри, снабженный патрубками для подачи реакционного газа сверху и поддува инертного газа снизу и патрубком для отвода продуктов реакции, отличающийся тем, что, с целью исключения осаждения продукта на стенках камеры и попадания поддуваемого газа в зону осаждения, улучшения за счет этого структурного совершенства и воспроизводимости электрофизических параметров получаемых слоев, реактор снабжен кварцевой рубашкой, соединенной с реактором через отверстия, выполненные в его стенке ниже размещения подложкодержателя, а патрубок для отвода продуктов реакции размещен на кварцевой рубашке выше подложкодержателя.

Устройство для осаждения слоев из газовой фазы

Изобретение относится х технологическому оборудованию для получения диэлектрических слоев двуокиси кремния на подложках из арсенида галлия. Обеспечивает увеличение площади поверхности осаждения и повышение однородности слоев. Устройство включает реактор с вращающимся подложкодержателем (ПД). На ПД размещен источник излучения, содержащий анод и полый катоде рубашкой охлаждения. Внутри катода размещен полый цилиндр для хладагента, установленный с зазором относительно стенки катода. На уровне анода , вокруг него, размещен распределитель газового потока в виде тороида с кольцевой прорезью. Кольцевая прорезь выполнена на внутренней поверхности тороида под углом 45° к поверхности ПД. ПД может быть выполнен в виде планетарного механизма . 2 з.п.ф-лы, 1 ил.

DEVICE FOR PRODUCTION OF LAYERS OF HIGH-MELTING NITRIDES BY CHEMICAL GAS-PHASE PRECIPITATION

Устройство для получения пленок

Изобретение относится к оборудованию для нанесения металлических, полупроводниковых и диэлектрических покрытий и может найти практическое применение в полупроводниковой промышленности, обеспечивает повышение однородности толщины и структурно-чувствительных параметров пленки и снижение потерь испаряемого соединения/Устройство включает обогреваемый цилиндрический кварцевый реактор, установленный горизонтально, расположенные внутри него кювету для испаряемого соединения и подложку для осаждения пленок, средство для ввода в реактор газа-носителя и средство для вывода, соединенное с фильтром-ловушкой продуктов разложения. Внутри реактора установлена кассета прямоугольного сечения, разделенная на верхнюю открытую с торцов часть для кюветы с испаряемым соединением и нижнюю закрытую часть в которой установлена обойма для подложки, соединенная с механизмом возвратно-поступательного перемещения, верхняя и нижняя части кассеты разделены горизонтальной перегородкой с щелевым отверстием в центре, над ...

Устройство для наращивания монокристаллических пленок из паровой фазы вещества

Verfahren zur Vorbereitung einer Blende zur Verminderung von Teilchen in einer Kammer zur physikalischen Aufdampfung.

Verfahren zum Herstellen von induktiv aufheizbaren Halbleiterkoerpern

Hollow semiconductor body prodn - from gas phase compound onto heated mandrel in vacuum chamber

To enable long tubes (up to 2m) to be made, with uniform wall thickness, the mandrel is made up of sections screwed together, esp. using externally threaded jointing collars in internally threaded ends of the tubes. The mandrel is heated by passage of electric current through it and to obtain a uniform wall thickness product the temp. distribution along its length must be uniform. For this to be achieved, the dimensioning of the jointing elements is such that the resistance per unit length of the mandrel wall is essentially constant.

Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas

SILICON CARBIDE-BASED MOLDED MEMBER FOR USE IN SEMICONDUCTOR MANUFACTURE

A process for the production of extremely pure semi-conductor material

... Extremely pure semi-conductor material is produced by deposition from a mixture of gaseous compounds on to a carrier body of the material which is heated by passing an electric current therethrough, and wherein the carrier body is supported on a pure carbon holder and where further carbon holders are purified by treatment with the reaction gas product of the deposition reaction. In the production of silicon, the carrier and reducing gas, e.g. hydrogen is taken from vessel 1 through valves 2 and 3 and flowmeter 4 to chamber 5 where it is mixed with an evaporated silicon compound, e.g. silicochloroform or silicon tetrachloride, and the mixture injected into reaction vessel 10 (quartz) via jet 7. Carbon holders 13 support silicon carrier bodies 9, bridged by silicon 12 to allow electrical contact. The reaction gas product flows out through 16 into vessel 18 containing carbon pieces 19. The vessel is heated to 400 DEG to 700 DEG C. by electrical means 22. The treatment ...

APPARATUS FOR SYNTHESIZING MATERIALS BY CHEMICAL REACTION

... 1500691 Feed and temperature control D H POMMERRENIG 16 Dec 1974 [14 Dec 1973] 57991/73 Heading B1X [Also in Division F4] A gas distribution system in association with a plurality of chemical reactor furnaces is arranged so as to be capable of feeding a plurality of reagent and/or ambient gases selectively into any one of the reaction furnaces. In particular, in the synthesizing of materials such as conductors, semi-conductors and insulators in the production of electronic components and circuits, a plurality of two-zone reactor furnaces (RF1-RF4, Fig. 1) are supplied e.g. from supply cylinders and via mixing chambers (MC) and flow meters (FM) with the requisite gases under the control of valves (T) actuated by a switching arrangement (Fig. 2 or 3 and 4) adapted to permit the selection of the temperature profile required for the furnace. Only the selected furnace is activated while the others remain deactivated. The arrangement is such that any of a variety of temperature profiles can be ...

DEVICE FOR THE THERMAL TREATMENT OF SEMICONDUCTORS

PROCEDURE AND DEVICE FOR THE TREATMENT OF SEMICONDUCTOR SUBSTRATES WITH HYDROXYL RADICALS

DEVICE AND PROCEDURE FOR THE PRODUCTION ONE [...] V NITRIDFILMS

FAR AND REACTOR FOR BREEDING OF SILICON CARBIDE EINKRISTALLUNG BY CHEMICAL STEAM SEPARATION

Vertical furnace for the treatment of semiconductor substrates

METHOD AND APPARATUS FOR PRODUCING SEMI-CONDUCTOR MATERIAL

METHOD OF CLEANING A REACTOR

METHOD AND APPARATUS FOR PRODUCING SEMI-CONDUCTOR MATERIAL

A METHOD OF SUPPRESSING CONVECTION IN A FLUID IN A CYLINDRICAL VESSEL

An object of the present invention is to provide a method of suppressing convection of a fluid in a cylindrical vessel by means of realizing an environment under micro gravity which can be maintained for such a long time tha t growth of a large-sized crystal be economically effected. The feature of the present invention consists in a method of suppressing occurrence of natural convection of a fluid in a cylindrical vessel, when a density gradient due to difference in temperature, concentration or partial pressure is added to the gas or liquid filled in the cylindrical vessel along the central axis of the vessel, characterized by maintaining horizontal the vessel and rotating it around the central axis.

DEVICE FOR THE VACUUM-TIGHT CONNECTING OF TWO BODIES OF DIFFERENT MATERIALS

The invention has the problem of making available a device for connecting two bodies, especially a quartz body and a metallic body, which assures with few and simply formed components a high sealing ability at high temperature differences and at very low pressures and makes possible an easy assembly and disassembly. The device for the vacuum-tight connecting of two bodies of different materials, each of which has an essentially tubular end section (20, 30) and in the connected state of which the tubular end section (30) of the first body surrounds at least partially the end section (20) of the second body, comprises an intermediate conduit (13) for intermediate suction removal formed between the tubular end sections (20, 30) and comprises two seals (100, 150) which seal off the intermediate conduit (130).

Verfahren zur Herstellung von Halbleiterelementen.

Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium

Verfahren zum Herstellen von stabförmigen Halbleiterkristallen mit sehr hoher Reinheit

Verfahren zum Herstellen von einkristallinen Halbleiterschichten auf scheibenförmigen Einkristallen

Verfahren zum Herstellen kristalliner Schichten aus schwer flüchtigen Stoffen aus der Gasphase

Verfahren zum Herstellen von halbleitenden Elementen, insbesondere Silizium oder Germanium

Vorrichtung zur Abscheidung von Halbleitermaterial

Einrichtung für das epitaktische Aufwachsen einer Halbleiterschicht

Verfahren zum Herstellen einkristalliner dotierter Schichten aus Halbleitermaterial durch epitaktisches Aufwachsen

BELL FROM QUARTZ GLASS FOR SEMICONDUCTOR-TECHNOLOGICAL PURPOSES.

DEVICE FOR THE REACTOR OF THE LAYERED ATOMIC PRECIPITATION

РЕАКТОР ДЛЯ ПАРОФАЗНОГО ВИРОЩУВАННЯ В ЗАМКНУТОМУ ОБ'ЄМІ МОНОКРИСТАЛІВ CdTe, ZnTe

Реактор для парофазного вирощування в замкнутому об'ємі монокристалів CdTe, ZnTe містить циліндричну кварцеву ампулу. Один з кінців ампули виконаний у формі плоского дна. З зовнішнього боку дна приєднаний хвостовик, в якому встановлений з можливістю механічного контакту з плоским дном ампули тепловідвідний стержень з елементами фіксації.

Способ очистки технологической оснастки от отходов после эпитаксиального выращивания слоев типа А3В5

Изобретение относится к технологии полупроводниковых материалов и может быть использовано для очистки технологической оснастки от отходов после эпитаксиального выращивания слоев арсенида галлия или фосфида индия. Способ очистки технологической оснастки от отходов после эпитаксиального выращивания слоев типа А3В5 включает химическую обработку путем погружения части технологической оснастки с отходами в емкость, заполненную кислотным раствором, содержащим смесь азотной кислоты HNO3 и хлорной кислоты HCl, последующую ее промывку деионизованной водой и сушку. Химическую обработку проводят кислотным раствором, который содержит 25 … 52%об. азотной кислоты HNO3 . Кислотный раствор предварительно дегазирован в течение 1,5 … 4 часов в деионизованной воде. П. формулы: 2 Фиг.: 2 ...

Способ очистки технологической оснастки от отходов после эпитаксиального выращивания слоев типа А3В5

Изобретение относится к технологии полупроводниковых материалов и может быть использовано для очистки технологической оснастки от отходов после эпитаксиального выращивания слоев арсенида галлия или фосфида индия. Способ очистки технологической оснастки от отходов после эпитаксиального выращивания слоев типа А3В5 включает химическую обработку путем погружения части технологической оснастки с отходами в емкость, заполненную кислотным раствором, содержащим смесь азотной кислоты HNO3 и хлорной кислоты HCl, последующую ее промывку деионизованной водой и сушку. Химическую обработкупроводят кислотным раствором, который содержит 25 … 52%об. азотной кислоты HNO3 . Кислотный раствор предварительно дегазирован в течение 1,5 … 4 часов в деионизованной воде. П. формулы: 2 Фиг.: 2 ...

Epitaxial deposition chamber

A process chamber is described herein that includes a chamber body having a top plate disposed above a bottom plate with a chassis and an injector ring disposed between the top plate and the bottom plate. The upper clamping ring and the lower clamping ring fix the upper portion and the bottom plate in place. The upper heating module is coupled to an upper clamp ring on the top plate. The lower heating module is coupled to the lower clamping ring below the bottom plate.

A method for preparing by epitaxial growth of the layers of substance semiconductrice, single-crystal and doped

VACUUM DEVICE FOR PROCESSING OR ANALYSIS OF A SAMPLE

Improved gas flow in an epitaxial reactor

L'invention concerne un réacteur d'épitaxie du type comportant une enceinte (1) ayant, en section, une largeur grande devant sa hauteur, et dans laquelle est définie une chambre (9) soumise à un écoulement gazeux dont une paroi inférieure est définie par un suscepteur (6) d'échantillon à traiter, une plaque (11) étant intercalée entre le suscepteur (6) et une paroi supérieure (3) de l'enceinte, la plaque constituant une paroi supérieure de la chambre dont la forme est, en section, indépendante de la forme de l'enceinte.

EQUIPMENT Of EPITAXY BY MOLECULAR JET

Équipement d'épitaxie comprenant une enceinte d'épitaxie sous vide contenant un support du substrat, et à au moins une cellule d'évaporation sous vide du matériau d'épitaxie fermée par un diaphragme présentant au moins une lumière et communiquant avec l'enceinte d'épitaxie par une bride de liaison. Il comprend en outre une plaque mobile dont la section correspond à la section du diaphragme, placée en regard dudit diaphragme perforé.

TUBE PROTECTIVE RESISTING HOT FOR THE HEAT TREATMENT OF SOLID-STATE COMPONENTS

Improvements with the apparatuses of reaction to produce, in particular by croissanceepitaxic, of the deposits resulting from a reaction in gas phase in contact with hot substrates

VACUUM DEVICE FOR PROCESSING OR ANALYSIS OF A SAMPLE

L'invention concerne un dispositif sous vide (100) pour le traitement ou l'analyse d'un échantillon comportant : - une première chambre (110), une deuxième chambre (120) et un raccord tubulaire (101) qui s'étend entre celles-ci et sur lequel est disposée une vanne (102) permettant de transférer ledit échantillon d'une chambre à l'autre, - une canne de transfert (130) comprenant un tube de transfert (131), une tige de transfert munie d'un plateau qui est montée mobile en translation dans le tube de transfert de manière à transférer ledit échantillon reçu par le plateau d'une chambre à l'autre à la faveur de la translation de ladite tige de transfert, et des moyens d'actionnement (135, 136) de la tige de transfert, et - une armoire (140) adaptée à accueillir des appareils électriques (141, 142). Selon l'invention, l'armoire comprend un logement (143) adapté à accueillir une partie au moins du tube de transfert.

분위기 에피택셜 퇴적 챔버

... 본 명세서에 설명된 실시예들은 에피택셜 퇴적 챔버들 및 그것의 컴포넌트들을 개시한다. 일 실시예에서, 챔버는 처리 영역에 위치된 기판 지지체, 복수의 복사 에너지 소스를 포함하는 복사 에너지 어셈블리, 상부 라이너와 하부 라이너를 갖는 라이너 어셈블리, 및 기판 지지체와 복사 에너지 어셈블리 사이에 위치된 돔 어셈블리를 포함할 수 있다. 본 명세서에 설명된 에피택셜 퇴적 챔버들은, 스루풋을 유지하고 비용을 감소시키고 신뢰가능하게 균일한 퇴적 생성물을 제공하면서 더 큰 기판들의 처리를 허용한다.

INERT BARRIER FOR HIGH-CLEANLINESS EPITAXIAL DEPOSITION SYSTEM

PURPOSE: A processing reactor is provided to prolong the service life of main chamber O-rings and prevent the infiltration of O-ring contaminants into a treating region by arranging vacuum tight seals and nonreactive barriers between upper and lower members forming the treating region. CONSTITUTION: The processing reactor(15) comprises a treating region(18) to receive a depositing gas or heating cleaning gas from an external source via a supply line(30) in an epitaxial silicon chemical vapor deposition cycle or cleaning cycle. Since the region(18) is formed in upper and lower domes(12) and (16) and hermetically sealed with O-rings(52, 54, 56, 58 and 60), barriers(64) and (66) having heat resistances and chemical resistances and prevents the heated depositing reaction product or the heating cleaning gas, which advances into the gap between a liner(118) and the domes(12) and (16) from reaching the O-rings(56) and (58) during the deposition or cleaning cycle. In addition, the barriers(64) ...

CARBON-BASED CONTAINMENT SYSTEM

Apparatus for producing a semiconductor device

A process tube that is impermeable to impurities for use in the manufacture of semiconductor devices. The process tube is made of sintered silicon carbide and it may optionally be infiltrated with elemental silicon. The inner surface of the process tube includes a layer of high density silicon carbide to prevent diffusion of impurity species through the walls of the process tube.

APPARATUS AND METHOD FOR EPITAXIALLY GROWING SOURCES AND DRAINS OF A FINFET DEVICE

An apparatus and a method for epitaxially growing sources and drains of a FinFET device. The apparatus comprises: a primary chamber; a wafer-loading chamber; a transfer chamber provided with a mechanical manipulator for transferring the wafer; an etching chamber for removing a natural oxide layer on the surface of the wafer and provided with a graphite base for positioning the wafer; at least one epitaxial reaction chamber; a gas distribution device for supplying respective gases to the primary chamber, the wafer loading chamber, the transfer chamber, the etching chamber and the epitaxial reaction chamber; and a vacuum device. The wafer loading, transfer, etching, and epitaxial reaction chambers are all positioned within the primary chamber. The apparatus integrates the etching chamber and epitaxial reaction chamber to remove the natural oxide layer on the surface of the wafer in a condition of isolating water and oxygen before the epitaxial reaction has occurred.

HVPE CHAMBER

Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have one or more precursor sources coupled thereto. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the precursors and at a lower temperature. The chamber has a truncated box shape formed by a curved cover which improves the flow of the nitrogen and precursor gases and the uniformity of the film deposition.

Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy

A Hydride Vapor Phase Epitaxy (HVPE) system is provided which comprises a deposition assembly comprising a plurality of deposition chambers and a plurality of separation chambers mounted together, each separation chamber having two opposing ends, each end mounted to a deposition chamber of the plurality of deposition chambers and in fluid communication with the deposition chamber via a fluid pathway, wherein each deposition chamber of the plurality of deposition chambers defines a deposition zone having a height hd, each separation chamber defines a separation zone having a height hs and a length ls, and each fluid pathway has a height hfp, wherein hfp, hs and ls are selected to provide a predetermined interfacial transition region value between different material layers of a multilayer heterostructure; and a moveable belt configured to continuously convey a substrate mounted thereon through the plurality of deposition chambers and the plurality of separation chambers. The system further ...

APPARATUS AND METHOD FOR PRODUCTION OF EPITAXIAL FILMS

An apparatus for fabricating a III-V nitride film and a method for fabricating the same

A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least A1 element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

MOLECULAR BEAM EPITAXY EQUIPMENT

Epithaxy equipment comprising an epitaxy vacuum chamber containing a substrate support and at least one cell for vacuum evaporation of epitaxy material closed by a diaphragm having at least one opening and communicating with the epitaxy chamber by a connecting brace element. The inventive equipment also comprises a moveable plate whose cross-section corresponds to the cross-section of the diaphragm and which is placed opposite said perforated diaphragm.

ВЫРАЩИВАНИЕ ЭПИТАКСИАЛЬНОГО 3C-SiC НА МОНОКРИСТАЛЛИЧЕСКОМ КРЕМНИИ

Изобретение относится к технологии выращивания эпитаксиального 3C-SiC на ориентированном монокристаллическом кремнии. Способ включает предоставление монокристаллической кремниевой подложки 2, имеющей диаметр по меньшей мере 100 мм, в реакторе 7 химического осаждения из газовой фазы с холодными стенками, содержащем кварцевую камеру; нагревание подложки до температуры, равной или большей чем 700°C и равной или меньшей чем 1200°C, с использованием внешних нагревателей 9, которые представляют собой инфракрасные лампы; введение газовой смеси 33 в реактор, тогда как подложка находится при данной температуре, причем газовая смесь содержит прекурсор 16 источника кремния, прекурсор 18 источника углерода, который отличается от прекурсора 16 источника кремния, и несущий газ 20, таким образом, чтобы осадить эпитаксиальный слой 3C-SiC на монокристаллический кремний, при этом прекурсор 16 источника кремния содержит силан или содержащий хлор силан, а прекурсор 18 источника углерода содержит содержащий ...

Реактор для получения эпитаксиальных слоев карбида кремния на кремниевой подложке

Полезная модель относится к электронной технике, а именно, к получению полупроводниковых материалов, и может быть использована при создании полупроводниковых приборов. Реактор для получения эпитаксиальных слоев карбида кремния на кремниевой подложке имеет цилиндрический вертикально ориентированный корпус, выполненный из кварцевого стекла с верхним и нижним уплотняющими фланцами, снабженными патрубками для ввода газа реагента и вывода реакционной смеси. Внутри корпуса по оси размещена сборка подложкодержателей. Реактор также содержит цилиндрическую катушку индукционного нагрева, концентрично охватывающую сборку подложкодержателей. Сборка подложкодержателей размещена на осевом стержне, соединенном с нижним фланцем, и состоит из подложкодержателей, выполненных в виде дисков, установленных друг над другом и разделенных между собой дистанционными элементами. При этом в подложкодержателях вдоль края выполнены отверстия, распределенные по окружности и предназначенные для прохождения центрирующих ...

INSTALLATION FOR BLOWING CHAMBER

DEVICE FOR TREATING PLATES IN GAS PHASE

Устройство для обработки пластин в газовой фазе

INDUKTIV BEHEITZTER REAKTOR ZUR CHEMISCHEN ABSCHEIDUNG AUS DER DAMPFPHASE.

Verfahren zum Einrichten eines Epitaxie-Reaktors

Die Erfindung betrifft ein Verfahren zur Einrichtung einer Prozesskammer in einer Vorrichtung zum Abscheiden von Schichten auf einem von einem Suszeptor in der Prozesskammer gehaltenen Substrats, in dem durch ein Gaseinlassorgan, insbesondere mit Hilfe eines Trägergases, Prozessgase in die Prozesskammer eingeleitet werden, die sich darin insbesondere an heißen Oberflächen in Zerlegungsprodukte zerlegen, welche Zerlegungsprodukte die Schicht-bildenden Komponenten aufweisen. Um die Vorrichtung derart zu ertüchtigen, dass dicke Mehrschichtstrukturen in unmittelbar aufeinanderfolgenden Prozessschritten reproduzierend abgeschieden werden können, wird vorgeschlagen, dass für die zur Prozesskammer weisende Oberfläche zumindest der dem Suszeptor gegenüberliegenden Wandung der Prozesskamm ein Werkstoff gewählt wird, dessen optischer Reflektionsgrad, optischer Absorptionsgrad und optischer Transmissionsgrad jeweils dem der sich beim Schichtwachstum abscheidenden Beschichtung entspricht.

Apparat aus Silica für Halbleiteranordnungsherstellung

Zwei Kuppeln aufweisender Reaktor zur Halbleiterbehandlung

Abscheidungsvorrichtung für das Aufwachsen von einem Material unter reduzierter Gefahr.

GROWTH OF SEMI-CONDUCTORS

APPARATUS FOR CHEMICALLY DEPOSITING EPITAXIAL LAYERS ON SEMI CONDUCTOR SUBSTRATES

... 1436051 Silicon HLS INDUSTRIES 14 March 1974 [18 Oct 1973] 11357/74 Heading C1A [Also in Division C7] Apparatus for deposition of an epitaxial layer, suitably of silicon, on a substrate, e.g. of a semi-conductor from a reactant gas, comprises an outer chamber containing an inner reaction chamber within which is a heated substrate support with a porous wall separating the chambers, means being provided both for supplying carrier and diluent gases to the outer chamber and advancing them through the porous wall towards the support and for supplying reactant gas to the reaction chamber at a location adjacent the gas exit surface of the porous wall. In Fig. 3, which is a partial plan view in section of a cylindrical apparatus, wall 70 (made of Al) defines the outer chamber 61, to which diluent and carrier gases are fed via pipes 71. Porous wall 60, e.g. of sintered stainless steel has circumferentially extending undulations and is supplied with reactant gas adjacent the points of maximum diameter ...

Method of making surface-type and point-type rectifiers and crystal-amplifier layers from semiconductor material

An electric semiconducting device for use as a rectifier or a crystal triode is prepared by depositing on a base plate a mixture of semiconducting material and a small percentage of donor or acceptor impurity material, by reducing a volatile compound of semiconducting and impurity material with a volatile or gaseous reducing agent in the presence of the base plate. In one example, Fig. 1, hydrogen is passed at a controlled rate through silicon tetrachloride in vessel 3 at temperature T1, and at a separately controlled rate through a mixture of silicon tetrachloride and boron trichloride in vessel 4 at temperature T2. The outputs are combined and passed through an oven 8 where the reaction product is deposited on a base plate 9 of carbon, or a high melting point conducting material which does not alloy with silicon, or aluminium oxide or a ceramic material. The proportion of boron which acts as an acceptor impurity may thus be controlled to provide ...

METHOD OF CLEANING A REACTOR

Method and Apparatus for Epitaxial Deposition

... 1,159,995. Epitaxial deposition of semiconductors. MONSANTO CO. 29 July, 1966 [29 July, 1965], No. 34119/66. Heading C1A. [Also in Divisions C7 and F4] A method of depositing an epitaxial coating of semi-conductor material on a semi-conductor member comprises introducing the semi-conductor member on a supportive structure into the second of two chambers, means being provided to provide operative communication between the two chambers and between the second chamber and the atmosphere when open and gas-tight seals therebetween when closed, introducing a purging gas inert with respect to the semi-conductor material into the second chamber for purging the semi-conductor member, passing the loaded support into the first chamber without contact with any foreign atmosphere and introducing thermally decomposable feed gases into the first chamber for causing an epitaxial coating material to be produced and deposited on the semi-conductor member. The semi-conductor element on its support may be introduced ...

Improvements in or relating to the production of doped monocrystalline layers of semiconductor material

... 1,105,429. Semi-conductor devices. SIEMENS A.G. 27 June, 1966 [28 June, 1965], No. 28674/66. Heading H1K. In an epitaxial deposition process a vaporizable compound of the semi-conductor material only a vaporizable compound of a dopant diluted with a vaporizable compound of the semi-conductor material are evaporated in separate vessels and fed to the reaction chamber containing a heated monocrystalline semiconductor substrate. As shown, the reaction chamber 1 is connected to bubble evaporators 2, 3 which are cooled by water jackets 14, 15, and into which a carrier gas such as hydrogen is fed via valves 10, 11. Evaporator 2 contains liquid germanium trichloride and evaporator 3 contains a solution of decaborane in germanium trichloride. A third evaporator may be provided containing a vaporizable compound of an impurity of the opposite type diluted with a compound of the semi-conductor material so that the conductivity type of the deposited layer can be changed during the process. The semi-conductor ...

QUARTZ GLASS REACTOR FOR MOCVD PLANTS.

Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication

REACTION VESSEL FOR DEPOSITING SEMI-CONDUCTOR MATERIAL

A reaction vessel is disclosed for depositing semi-conductor material from the gaseous phase onto heated carrier elements. The vessel consists of a metal baseplate, a quartz or glass bell placed thereon, and an autoclave including the bell and the joint thereof with the baseplate, and filled with inert compressed gas. The autoclave is provided with an instrument for monitoring the pressure therein and acts as a safety device in the event of a drop in pressure.

INVERTED POSITIVE VERTICAL FLOW CHEMICAL VAPOR DEPOSITION CHAMBER

HIGH THROUGHPUT ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE) APPARATUS

A cold wall reactor (10) having inner (14) and outer (12) walls defining an annular reactor cell (16). A susceptor (52) is rotatably mounted in the cell (16), and received wafers (53) to be treated by gases flowing axially through the cell (16). The outer wall (10) of the reactor is normally cooled, but is heated by a suitable furnace (210) to provide a hot wall reactor when cleaning of the cell (16) is required.

APPARATUS AND PROCESS FOR DEPOSITION OF POLYCRYSTALLINE SILICON

The invention relates to an apparatus for deposition of polycrystalline silicon, comprising a reactor chamber with a reactor wall, at least 20 filament rods and gas inlet orifices for reaction gas in the reactor chamber, wherein each filament rod - except for the filament rods close to the reactor wall-has, at a distance of 150 to 450 mm, three further adjacent filament rods and one to three adjacent gas inlet orifices. The invention further relates to a process for depositing polycrystalline silicon on filament rods in such an apparatus, the gas inlet orifices are used to introduce a silicon--containing gas into the reactor chamber and the filament rods are heated to a temperature at which silicon is deposited thereon.

Film Forming Method Using Epitaxial Growth and Epitaxial Growth Apparatus

Microwave plasma chemical vapor deposition device

Reaction chamber air inlet device for metal organic chemical vapor deposition (MOCVD) equipment

Apparatus and method for depositing layer of semiconductor material on substrate wafer

The invention relates to an apparatus for depositing a layer of semiconductor material on a substrate wafer, the apparatus comprising: a base ring located between an upper dome and a lower dome; a susceptor serving as a support for the substrate wafer during deposition of the layer; a gas inlet and a gas outlet; an exhaust gas line and a gas supply line for conveying a process gas over an upper side surface of the substrate wafer; a slit valve channel and a slit valve; and lifting and rotating means for lifting and rotating the susceptor and the substrate wafer, characterized in that one or more components of the apparatus made of stainless steel are covered by an amorphous layer comprising silicon and hydrogen.

Mixed type vapor phase epitaxial growth system

The invention relates to a mixed type vapor phase epitaxial growth system which comprises a mixed type growth module and a tray used for loading wafers, the mixed type growth module comprises at least one HVPE growth subsystem and at least one MOCVD growth subsystem, and the HVPE growth subsystem and the MOCVD growth subsystem are respectively provided with an independent growth chamber; the tray can be quickly switched in position in each growth chamber of the hybrid growth module. The hybrid vapor phase epitaxial growth system provided by the invention realizes advantage complementation of an HVPE system and an MOCVD system, and is used for solving the technical problems that a single HVPE system cannot meet the requirement of preparing a multi-layer functional film, and a single MOCVD system is low in growth rate and high in film material cost; and the advantages of high growth rate, high epitaxial crystal quality and low material cost of the HVPE system and the advantages of better ...

EQUIPMENT Of EPITAXY BY MOLECULAR JET

APPARATUS FOR CHEMICALLY DEPOSITING EPITAXIAL LAYERS ON SEMICONDUCTOR SUBSTRATES

POLLUTION CONTROL DEVICE FOR RACK UPRIGHT GAS PHASE DEPOSITION.

TUBE REACTION FOR the MANUFACTURE Of a PLATE OF SEMICONDUCTOR

Tube de réaction pour la fabrication d'une plaquette de semi-conducteur (1), reçue dans l'espace (2) d'un corps de tube (3), dont une paroi (3b) comporte un certain nombre de trous traversants; des dispositifs de détection de température formés sur les trous traversants détectent la température de la plaquette (1). Chacun des dispositifs de détection de température comprend un capuchon cylindrique (6) qui ferme le trou traversant correspondant et qui supporte la plaquette de semi-conducteur (1). Un élément de fixation de détecteur de température, introduit dans le capuchon cylindrique (6) par le trou traversant, comprend une partie cylindrique à visser dans le capuchon (6) et dont la surface périphérique extérieure comporte des rainures pour amener un thermocouple à la partie supérieure du capuchon (6).

Improvements with the processes of deposit of single-crystal layers

EPITAXIAL REACTOR HAS WALL-PROTECTED DEPOSITS

PLANETARY EPITAXIAL REACTOR

Apparatus and methods for deposition reactors

... 본 발명은 ALD(Atomic Layer Deposition)장치와 같은 장치에 대한 것으로서, 이러한 장치는 순차적 자기-포화 표면 반응에 의해 증착 반응기의 가열된 기판상에 물질을 증착하는 구조로된 전구체 소스를 포함한다. 또한 이러한 장치는 상기 전구체 소스로부터 상기 기판을 구비한 반응기에 구비된 반응 참버로 전구체 증기를 공급하는 인-피드 라인 및 전구체 소스 및 반응기 챔버 사이에서 전구체 증기의 응축이 액상 또는 고상으로 되는 것을 방지하기 위하여 반응기 챔버로부터 열을 사용하도록 된 구조체를 포함한다.

불순물 적층 에피택시를 위한 장치

... 본 개시물의 실시예들은 반도체 기판을 처리하기 위한 장치에 관한 것이다. 이 장치는 프로세스 챔버를 포함하고, 프로세스 챔버는 기판을 지지하기 위한 기판 지지체; 하부 돔; 하부 돔에 대향하는 상부 돔; 및 프로세스 챔버의 측벽 내에 배치된 복수의 가스 주입구를 갖는다. 이 장치는 복수의 가스 주입구를 통해 프로세스 챔버에 결합된 가스 전달 시스템을 포함하고, 가스 전달 시스템은 하나 이상의 화학종을 제1 유체 라인을 통해 복수의 가스 주입구로 제공하는 가스 도관; 하나 이상의 도펀트를 제2 유체 라인을 통해 복수의 가스 주입구로 제공하는 도펀트 소스; 및 제2 유체 라인과 프로세스 챔버 사이에 배치된 고속 스위칭 밸브를 포함하고, 고속 스위칭 밸브는 프로세스 챔버와 배기부 사이에 하나 이상의 도펀트의 유동을 스위칭한다.

다중-층 EPI 챔버 본체

... 본원에서 개시되는 바와 같은 장치는 열 증착 챔버, 예컨대 에피택셜 증착 챔버 내에서의 사용을 위한 챔버 본체 설계에 관한 것이다. 챔버 본체는 세그먼트화된 챔버 본체 설계이며 주입 링 및 베이스 플레이트를 포함한다. 베이스 플레이트는 자신을 관통하여 배치되는 하나 이상의 배기 통로들 및 기판 이송 통로를 포함한다. 주입 링은 자신을 관통하여 배치되는 복수의 가스 주입 통로들을 포함한다. 주입 링은 베이스 플레이트 상단 상에서 배치되고 베이스 플레이트에 부착된다. 하나 이상의 배기 통로들 및 가스 주입 통로들은 서로 대향하여 배치된다. 베이스 플레이트 및 주입 링 둘 모두에서 하나 이상의 시일 밀봉 홈들이 형성되어, 주입 링 및 베이스 플레이트가 서로를 밀봉하는 것뿐만 아니라 프로세스 챔버 내의 다른 컴포넌트들을 밀봉하는 것을 가능하게 한다.

Gas distribution system, reactor including the system, and methods of using the same

A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently fine tune gas source locations and gas flow rates of reactants to a reaction chamber of the reactor systems.

Reaction system for growing a thin film

An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template

A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.

SELF-GETTERING DIFFERENTIAL PUMP

A self-gettering differential pump for a molecular beam epitaxy system has a collimator with a length greater than its diameter mounted in front of a source in extended port geometry, wherein the reactant delivered by the source also serves as a gettering agent. 1. A self-gettering differential pump for a molecular beam epitaxy system , comprising:a collimator having a length greater than its diameter, wherein the collimator includes a vacuum chamber opening, a first end and a second end, wherein the first end is positioned in proximity to the vacuum chamber opening; anda port positioned in proximity to the second end of the collimator, the port comprising an effusion cell that, when activated, delivers a reactant through the collimator to the vacuum chamber opening;wherein the reactant also serves as a gettering agent.2. The self-gettering differential pump of claim 1 , further comprising a layer of reactant positioned on an inner sidewall of the collimator.3. The self-gettering differential pump of claim 1 , wherein the reactant is a multi-element source.4. The self-gettering differential pump of claim 1 , wherein the reactant comprises one or more of Sr claim 1 , Mg claim 1 , Ca claim 1 , Ba claim 1 , Ti and Zn.5. The self-gettering differential pump of claim 4 , wherein the reactant comprises strontium.6. The self-gettering differential pump of claim 1 , wherein a ratio of length to diameter of the collimator is greater than 10.7. The self-gettering differential pump of claim 1 , wherein a ratio of length to diameter of the collimator is from about 2 to about 7.8. A molecular beam epitaxy system claim 1 , comprising:a vacuum chamber having an opening; and a collimator having a length greater than its diameter, the collimator comprising, a first end and a second end, wherein the first end is positioned in proximity to the opening; and', 'a port positioned in proximity to the second end of the collimator, the port comprising an effusion cell that, when activated, ...

METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR

Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step. 1. A chemical vapor deposition system , comprising:an entrance isolator operable to prevent contaminants from entering the system at an entrance of the system;an exit isolator operable to prevent contaminants from entering the system at an exit of the system;an intermediate isolator disposed between the entrance and exit isolators;a first deposition zone disposed adjacent the exit isolator; anda second deposition zone disposed adjacent the exit isolator, wherein the intermediate isolator is disposed between the deposition zones and is operable to prevent mixing of gases between the first deposition zone and the second deposition zone.2. The system of claim 1 , wherein a gas is injected into the entrance isolator at a first flow rate to prevent back diffusion of gases from the first deposition zone.3. The system of claim 1 , wherein the gas is injected into the intermediate isolator at a first flow rate to prevent back mixing of gases between the first deposition zone and the second deposition zone.4. The system of claim 1 , wherein a gas is injected into the exit isolator at a first ...

SYSTEM FOR USE IN THE FORMATION OF SEMICONDUCTOR CRYSTALLINE MATERIALS

A system used in the formation of a semiconductor crystalline material includes a first chamber configured to contain a liquid metal and a second chamber in fluid communication with the first chamber, the second chamber having a greater volume than a volume of the first reservoir chamber. The system further includes a vapor delivery conduit coupled to the first chamber configured to deliver a vapor phase reactant material into the first chamber to react with the liquid metal and form a metal halide vapor phase product. 1. A system used in the formation of a semiconductor crystalline material comprising:a first chamber configured to contain a liquid metal;a second chamber in fluid communication with the first chamber, the second chamber having a greater surface area than a surface area of the first reservoir chamber; anda vapor delivery conduit coupled to the first chamber configured to deliver a vapor phase reactant material into the first chamber to react with the liquid metal and form a metal halide vapor phase product.2. The system of claim 1 , further comprising an exit coupled to the first chamber configured to remove the metal halide vapor phase product from the first chamber.3. The system of claim 2 , wherein the exit conduit is coupled to a growth chamber.4. The system of claim 1 , wherein the second chamber comprises a volume greater than a volume of the first reservoir claim 1 , wherein the second chamber comprises a volume at least 10 times greater than a volume of the first reservoir chamber volume.5. The system of claim 1 , wherein the second chamber comprises a surface area at least 2 times greater than a surface area of the first reservoir chamber volume.68-. (canceled)9. The system of claim 1 , wherein the vapor delivery conduit is a blower positioned in an upper half of the first chamber with respect to a height of the first chamber.10. The system of claim 9 , wherein the blower is configured to deliver the vapor phase reactant material to an upper ...

CHEMICAL VAPOR DEPOSITION OR EPITAXIAL-LAYER GROWTH REACTOR AND SUPPORTER THEREOF

A chemical vapor deposition or epitaxial-layer growth reactor includes a reaction chamber. At least one substrate carrier and a supporter for supporting the substrate carrier are provided in the reaction chamber. The substrate carrier includes a first surface and a second surface. The second surface of the substrate carrier is provided with at least one recess concaved inwardly. The supporter includes: a spindle part; a supporting part connected to one end of the spindle part and extending outwardly from the periphery of the spindle part, the supporting part including a supporting surface; and a plug-in part connected to the spindle part and extending by a height towards the first surface of the substrate carrier, the plug-in part of the supporter being inserted detachably in the recess, so as to enable the substrate carrier to be placed on and supported by the supporter. 1. A chemical vapor deposition or epitaxial-layer growth reactor , comprising a reaction chamber in which a substrate carrier and a supporter for supporting the substrate carrier are provided , whereinthe substrate carrier comprises a first surface and a second surface, the first surface is configured to place several substrates to be processed thereon; the second surface of the substrate carrier is provided with at least one recess concaved inwardly;the supporter comprises: a spindle part; a supporting part connected to one end of the spindle part and extending outwardly from the periphery of the spindle part, the supporting part comprising a supporting surface; and at least one plug-in part connected to the spindle part and extending by a height towards the first surface of the substrate carrier; andthe at least one plug-in part of the supporter is inserted detachably into the at least one recess, so as to enable the substrate carrier to be placed on and supported by the supporter, and in a supporting case, the supporting surface of the supporting part at least partially contacts with at least a ...

MICRO COIL, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREOF

A reaction container includes a cylindrical container body, a source gas introduction pipe group and a gas discharge pipe group extended in the opposite directions from both left and right side portions of the container body, and a cylindrical substrate inserted into the container body. Source gases introduced from the source gas introduction pipe group into the container body are thermally decomposed by the reaction with a catalyst carried on the substrate at a predetermined high temperature to grow micro coils from the substrate. 1. A micro coil which grows from a substrate based on gaseous carbon species produced on said substrate by thermally decomposing source gases using a catalyst under a predetermined high temperature , the source gases being introduced into a container body of a reaction container from one lateral direction facing wall portion thereof , and said reaction container including said container body and said substrate inserted into said container body in the axial direction and carrying the catalyst facing the inner peripheral surface of said container body so as to introduce the source gases producing gaseous carbon species when thermally decomposed into said container body from one lateral direction facing wall portion of both lateral direction facing wall portions of said container body and to discharge gases in said container body from the other direction facing wall portion of both the lateral direction facing wall portions.2. A manufacturing method of micro coils , comprising:a heat process for heating and maintaining a cylindrical container body of a reaction container at a predetermined high temperature, said reaction container including said container body and a substrate inserted into said container body in the axial direction and carrying a catalyst facing the inner peripheral surface of said container body so as to introduce source gases producing gaseous carbon species when thermally decomposed into said container body from a ...

FILM-FORMING APPARATUS AND FILM-FORMING METHOD

A film-forming apparatus supplies a plurality of gases toward a substrate in a chamber using a shower plate . The shower plate has a plurality of gas flow paths extending within the shower plate along a first face of the substrate side and connected to gas pipes supplying a plurality of gases, and a plurality of gas jetting holes bored such that the plurality of gas flow paths and the chamber communicate with each other on the first face side. In the film-forming apparatus , the plurality of gases supplied from the gas pipes to the plurality of gas flow paths of the shower plate are supplied from the gas jetting holes to the substrate without being mixed inside of and vicinity of the shower plate 1. A film-forming apparatus including a film-forming chamber and a shower plate which is provided at an upper section of the film-forming chamber and through which gases supplied to the film-forming chamber pass , whereinthe shower plate has a first face directed to inside of the film-forming chamber,a second face opposed to the first face and directed to outside of the film-forming chamber,a plurality of gas flow paths extending between the first face and the second face along the first and second faces; anda plurality of gas jetting holes which causes the plurality of gas flow paths and the first face to communicate with each other, whereinthe gases supplied from respective ends of the plurality of gas flow paths are jetted from the plurality of gas jetting holes toward the inside of the film-forming chamber.2. The film-forming apparatus according to claim 1 , further comprising a gas supply control mechanism controlling a timing of supplying a first gas to at least one of the plurality of gas flow paths and a timing of supplying a second gas to another gas flow path of the plurality of gas flow paths.3. The film-forming apparatus according to claim 1 , wherein the shower plate is provided with a colling mechanism.4. The film-forming apparatus according to claim 3 , ...

SUSCEPTOR AND METHOD FOR MANUFACTURING EPITAXIAL WAFER

A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface. 16-. (canceled)7. A susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer , wherein a pocket in which the semiconductor substrate is to be arranged is formed on an upper surface of the susceptor , the pocket has a two-stage structure having an upper-stage-pocket portion for supporting an outer peripheral edge portion of the semiconductor substrate and a lower-stage-pocket portion formed below the upper-stage-pocket portion and on a central side of the pocket , hole portions that penetrate to reach a back surface of the susceptor and are opened at the time of performing the vapor-phase growth are formed in the lower-stage-pocket portion , and a protruding portion is provided on the back surface of the susceptor at least at a position corresponding to that of the upper-stage-pocket portion.8. The susceptor according to claim 7 ,wherein a thickness of the protruding portion is not more than three times a thickness of the susceptor excluding the protruding portion at the position corresponding to that of the upper- ...

GAS INJECTORS FOR CHEMICAL VAPOUR DEPOSITION (CVD) SYSTEMS AND CVD SYSTEMS WITH THE SAME

The present invention provides improved gas injectors for use with CVD (chemical vapour deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates. 1. A method for epitaxial deposition of a monocrystalline Group III-V semiconductor material , which comprises reacting an amount of a gaseous Group III precursor of gallium trichloride as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to deposit the semiconductor material on one or more substrates , which method comprises:heating the Group III precursor in a heating zone external to the reaction chamber to a temperature sufficient to decompose dimers therein as well as to prevent dimer formation of the precursor prior to contacting the one or more substrate(s); andpassing the Group III precursor through a funnel or wedge shaped channel that increases in cross-section in the direction of gas flow in order to provide an expanded laminar stream of heated Group III precursor gas along a wall of the reaction chamber to the one or more substrate(s), with the stream being sufficiently expanded to flow above each of the one or more substrate(s) to thereby deposit the semiconductor material on the substrate(s).2. The method of which further comprises passing a laminar gas stream of heated Group V component into the reaction chamber in a flow path above the Group III precursor gas stream and at a velocity such that the Group V component and Group III precursor ...

METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND METHOD FOR FABRICATING A NITRIDE SEMICONDUCTOR TEMPLATE

A metal chloride gas generator includes a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side, a raw material section heater and a growing section heater each of which heats an inside of the reactor, an upstream end comprising a gas inlet, and a gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section. The gas inlet pipe includes a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section. 1. A metal chloride gas generator , comprising:a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side;a raw material section heater and a growing section heater each of which heats an inside of the reactor;an upstream end comprising a gas inlet; anda gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section,wherein the gas inlet pipe comprises a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section.2. The metal chloride gas generator according to claim 1 , wherein the gas inlet pipe comprises a quartz glass and the suppressing section comprises an opaque section comprising an opaque ...

METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE

It is to suppress abnormal growth of GaN crystals around edge ends of a seed substrate. A susceptor is provided that has a pocket section in which a seed substrate is fixed, and a sub-susceptor provided between the susceptor and the seed substrate, the sub-susceptor being not reactive with the seed substrate, with a gap provided between the seed substrate and the sub-susceptor. 1. A method of fabricating a freestanding GaN substrate using vapor phase deposition comprising;supplying a source gas of a GaN crystal to a susceptor in which a seed substrate different from GaN is disposed; andsuppressing the GaN crystal around edge of the seed substrate disposed in the susceptor from being abnormally grown and vapor phase growing the freestanding GaN substrate,wherein the susceptor includes a pocket section in which the seed substrate is fixedly held, and a sub-susceptor between the susceptor and the seed substrate, the sub-susceptor being not reactive with the seed substrate, with a gap created between the seed substrate and sub-susceptor, thereby suppressing the abnormal growth of the GaN crystal around the edge of the seed substrate.2. The method according to claim 1 , wherein the gap has the same size as the thickness of the freestanding GaN substrate.3. The method according to claim 1 , wherein the size of the gap and the thickness of the freestanding GaN substrate are larger than 0 mm claim 1 , but not more than 2 mm claim 1 , respectively.4. The method according to claim 1 , wherein the sub-susceptor is made from sapphire claim 1 , single or poly-crystal silicon carbide claim 1 , or single or poly-crystal aluminum nitride.5. The method according to claim 1 , wherein sub-susceptor is not decomposed at temperature of at least room temperature or more claim 1 , but not less than 1200° C.6. The method according to claim 1 , wherein the vapor phase deposition is hydride vapor phase epitaxy (HVPE).7. An apparatus for fabricating a freestanding GaN substrate using vapor ...

Susceptor Device And Deposition Apparatus Having The Same

A susceptor device includes: a placement section on which a substrate is placed; a lift pin which is provided in the placement section and protrudes further to the upper side than the placement section at the time of carrying-in or carrying-out of the substrate, thereby supporting the substrate placed on the placement section; and lift pin moving means for moving the lift pin up and down. At the time of carrying-in or carrying-out of the substrate, the substrate is moved up and down by moving the lift pin up and down by the lift pin moving means in a state where the substrate is supported by the lift pin, and the susceptor device further includes a control section which controls the lift pin moving means so as to reduce a movement speed immediately before the substrate and the lift pin come into contact with each other, in a case of moving the lift pin. 1. A susceptor device comprising:a placement section on which a substrate is placed;a lift pin which is provided in the placement section and protrudes further to the upper side than the placement section at the time of carrying-in or carrying-out of the substrate, thereby supporting the substrate placed on the placement section; andlift pin moving means for moving the lift pin up and down,wherein at the time of carrying-in or carrying-out of the substrate, the substrate is moved up and down by moving the lift pin up and down by the lift pin moving means in a state where the substrate is supported by the lift pin, andthe susceptor device further comprises a control section which controls the lift pin moving means so as to reduce a movement speed immediately before the substrate and the lift pin come into contact with each other, in a case of moving the lift pin.2. The susceptor device according claim 1 , further comprising:placement section moving means for moving the placement section up and down,wherein the control section controls, during deposition of the substrate, the placement section moving means so as to ...

SUSCEPTOR AND VAPOR-PHASE GROWTH APPARATUS

The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, and 1. A susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts , and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part , andthe susceptor has a disk-shape wherein there is an opening at an inner periphery of the susceptor, into which a rotating shaft to rotate the susceptor is inserted, and the susceptor has a plurality of notches extending in a radial direction at an outer periphery and/or a periphery of said opening.2. The susceptor according to claim 1 , wherein the notches are provided between the substrate mounting parts.3. The susceptor according to claim 1 , wherein the notches are provided at the outer periphery of the susceptor claim 1 , and a circular hole is provided in each notch provided at the outer periphery.4. A vapor-phase growth apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the susceptor according to .'}5. The vapor-phase growth apparatus with the susceptor according to claim 3 , wherein the vapor-phase growth apparatus has a susceptor cover provided on an upper surface of the susceptor claim 3 , and a thrust-up mechanism having a thrust-up rod provided below the susceptor to be insertable into the circular hole and movable up and down claim 3 , and the susceptor cover is able to be thrust up by the thrust-up rod. The present invention relates to a vapor-phase growth apparatus which supplies a vapor-phase raw material onto substrates while heating a plurality of rotating and revolving substrates, to thereby grow a thin film.Priority is claimed on Japanese Patent Application No. 2012-151967, filed on Jul. 6, 2012, the content of which is incorporated herein by reference.In an epitaxial growth method ...

ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION

Systems for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment is optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material. 1. A system for epitaxial deposition of a monocrystalline Group III-V semiconductor material , which comprises:a source of a Group III precursor for use as one reactant,a source of Group V component for use as another reactant, anda reaction chamber for receiving the reactants for reaction to form the semiconductor material while generating exhaust gases; anda heating device for heating the exhaust gases to a temperature to reduce condensation thereof and enhance manufacture of the semiconductor material.2. The system of claim 1 , wherein the reaction chamber includes an outlet and exhaust conduit for removing exhaust gases claim 1 , including unreacted Group III precursor claim 1 , unreacted Group V component and reaction byproducts claim 1 , from the reaction chamber claim 1 , and the heating device is arranged for heating the outlet and exhaust conduit to temperatures between about 130° C. and about 160° C. to prevent condensation of the exhaust gases therein.3. The system of claim 2 , which ...

Crystal Growth Apparatus

An apparatus for crystal growth including a source chamber configured to contain a source material, a growth chamber, a passage for transport of vapour from the source chamber to the growth chamber, and a support provided within the growth chamber that is configured to support a seed crystal. The coefficient of thermal expansion of the support is greater than the coefficient of thermal expansion of the growth chamber. 1. An apparatus for crystal growth , the apparatus comprising:a source chamber configured to contain a source material;a growth chamber;a passage for transport of vapour from the source chamber to the growth chamber; anda support provided within the growth chamber and configured to support a seed crystal;wherein the coefficient of thermal expansion of the support is greater than the coefficient of thermal expansion of the growth chamber.2. An apparatus according to claim 1 , in which the support is movable with respect to the growth chamber such that the upper surface of the support and hence the upper surface of the crystal can be moved as the crystal is grown.3. An apparatus according to claim 2 , in which the support is coupled to or mounted on an elongate shaft.4. An apparatus according to claim 3 , in which the elongate shaft has a coefficient of thermal expansion which is the same or similar as that of the support or that of the growth chamber.5. An apparatus according to claim 1 , in which the growth chamber and the support respectively have a generally circular cross-sectional area.6. An apparatus according to in which the tube is formed from quartz or from pyrolytic boron nitride.7. An apparatus according to claim 1 , in which the support is formed from sapphire claim 1 , alumina claim 1 , silicon carbide claim 1 , tungsten claim 1 , tantalum or molybdenum.8. An apparatus according to in which the growth chamber is formed from quartz and the support is formed from sapphire.9. An apparatus according to in which the growth chamber has an inner ...

Gas injector for high volume, low cost system for epitaxial silicon depositon

Apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a gas injector for use in a process chamber may include first set of gas orifices configured to provide a jet flow of a first process gas into the process chamber, and a second set of gas orifices configured to provide a laminar flow of a second process gas into the process chamber, wherein the first set of gas orifices are disposed between at least two gas orifices of the second set of gas orifices.

DOORS FOR HIGH VOLUME, LOW COST SYSTEM FOR EPITAXIAL SILICON DEPOSITION

Apparatus for use in an inline substrate processing tool are provided herein. In some embodiments, a door for use in an inline substrate processing tool between a first and a second substrate processing module coupled to one another in a linear arrangement may include a reflective body disposed between two cover plates of substantially transparent material, configured to reflect light and heat energy into each of the at first and second substrate processing modules, wherein the door is selectively movable, via an actuator coupled to the door, between an open position that fluidly couples the first and second substrate processing modules to a closed position that isolates the first substrate processing module from the second substrate processing module. 1. A door for use in an inline substrate processing tool between a first and a second substrate processing module coupled to one another in a linear arrangement , the door comprising:a reflective body disposed between two cover plates of substantially transparent material, configured to reflect light and heat energy into each of the at first and second substrate processing modules,wherein the door is selectively movable, via an actuator coupled to the door, between an open position that fluidly couples the first and second substrate processing modules to a closed position that isolates the first substrate processing module from the second substrate processing module.2. The door of claim 1 , wherein the door claim 1 , when in the closed position claim 1 , forms a seal with the first and second substrate processing modules that prevents cross contamination or mixing of process gases between the first and second substrate processing modules.3. The door of claim 1 , wherein the reflective body is fabricated from one of a reflective material or a non-reflective material coated with a reflective coating.4. The door of claim 1 , wherein the reflective body is a quartz material coated with reflective nickel plating.5. The ...

SiC EPITAXIAL GROWTH APPARATUS

A SiC epitaxial growth apparatus according to an embodiment includes: a chamber into which a process gas at least containing silicon and carbon is introduced and housing a substrate to undergo epitaxial growth with the process gas; piping that discharges a gas containing a byproduct generated through epitaxial growth from the chamber; and a valve for pressure control in a middle of the piping. The valve has a flow inlet into which the gas flows from an upstream portion of the piping that causes the chamber and the valve to connect, and a flow outlet that allows the gas to flow out to a downstream portion of the piping that connects with the upstream portion via the valve. a part of the downstream portion is at a position lower than the flow outlet. The apparatus comprises a trap part being capable of collecting the byproduct at the downstream portion. 1. A SiC epitaxial growth apparatus comprising:a chamber into which a process gas at least containing silicon and carbon is introduced, the chamber being capable of housing a substrate to undergo epitaxial growth with the process gas;piping that discharges a gas containing a byproduct generated through epitaxial growth on the substrate from the chamber; anda valve for pressure control provided in a middle of the piping, whereinthe valve has a flow inlet into which the gas flows from an upstream portion of the piping that causes the chamber and the valve to connect with each other, and a flow outlet that allows the gas to flow out to a downstream portion of the piping that connects with the upstream portion via the valve, andat least a part of the downstream portion is provided at a position lower than the flow outlet, andthe SiC epitaxial growth apparatus further comprises a trap part that is capable of collecting the byproduct at the downstream portion.2. The SiC epitaxial growth apparatus of claim 1 , wherein the process gas contains chlorine.3. The SiC epitaxial growth apparatus of claim 1 , wherein at least any of ...

CVD REACTOR WITH A MULTI-ZONE HEATED PROCESS CHAMBER

A device, system and method for depositing crystalline layers on at least one crystalline substrate is described. The disclosure includes the use of a multi zone heater, the multi zone heater is disposed between a reactor housing and a process chamber. The multi zone heater has different electrical properties along its length, whereby the multi zone heater when heated by eddy currents induced by an RF field generated by a RF heating coil provides a temperature profile inside the multi zone heater that varies along the length of the multi zone heater for heating the process chamber. 1. A multi zone heater for providing a temperature profile for heating a process chamber used for depositing crystalline layers on at least one crystalline substrate , the multi zone heater comprises comprising:at least two heating zones made of an electric conducting material, and a first zone of the at least two zones having different electrical properties than a second zone of the at least two zones;wherein the multi zone heater has different electrical properties along a length.2. The device multi zone heater according to claim 1 , wherein the multi zone heater is tube shaped.3. The multi zone heater of claim 1 , wherein the multi zone heater comprises at least three heating zones claim 1 , wherein the electrical properties of at least one of the at least three heating zones is different from the other heating zones.4. The multi zone heater of claim 1 , wherein the multi zone heater is made from graphite.5. The multi zone heater of claim 4 , wherein the differences in the electrical properties are provided by using different grades of graphite.6. The multi zone heater of claim 1 , wherein the differences in the electrical properties are provided by using different thicknesses.7. The multi zone heater of claim 1 , wherein each zone of the multi zone heater is a shielding/heater tube.8. A process chamber for depositing crystalline layers on at least one crystalline substrate claim 1 , ...

APPARATUS AND METHODS FOR ALIGNMENT OF A SUSCEPTOR

The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber. 1. A thermal processing chamber comprising:a chamber body;a susceptor positioned in the chamber body;a pivot mechanism is coupled to the chamber body;a first flexible seal coupled between the pivot mechanism and the vertical actuator;a stem coupled to the susceptor; anda motion assembly coupled to the stem outside of chamber body, the motion assembly comprising a lateral adjustment device and a tilt adjustment mechanism, both the lateral adjustment device and the tilt mechanism adapted to position a major surface of the susceptor in plane that is parallel to an X-Y plane of the chamber body and position the stem along a longitudinal axis of the chamber, wherein the pivot mechanism is configured to provide angular movement of the motion assembly relative to the chamber body.2. The chamber of claim 1 , wherein the motion assembly comprises the first flexible seal and a second flexible seal.3. The chamber of claim 2 , wherein one of the first or second flexible seals is substantially limited to movement in an X axis or a Y axis.4. The chamber of claim 2 , wherein one of the first or second flexible seals is substantially limited to movement along the longitudinal axis of the chamber.5. The chamber of claim 2 , wherein the lateral adjustment device comprises an X adjustment plate and a Y adjustment plate that are coupled to adjacent sides of a base plate disposed adjacent to one of the first or second flexible seals ...

System For Horizontal Growth Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value. 1. A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) , the system comprising:a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside, the reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.2. The system of claim 1 , wherein the angle from horizontal is between −15° and +15 with respect to a horizontal plane perpendicular to the direction of gravity claim 1 , and/or the reactor is horizontally oriented with respect to the gravity direction to accommodate the PVT growth structure.3. The system of claim 1 , wherein the PVT growth structure includes a source material compartment containing a source material and a pair of growth compartments each on a side of the source material compartment claim 1 , a crystal seed is disposed in each growth compartment and is at a certain distance along a longitudinal axis from the source material for growing respective single crystals from the source material claim 1 , the source material is selected for growing single crystals of a semiconductor material from a group including at least silicium carbide claim 1 , 4H-SiC ...

REACTOR GAS PANEL COMMON EXHAUST

A substrate processing system is described that has a reactor and a gas panel, and a common exhaust for the reactor and the gas panel. An exhaust conduit from the reactor is routed to the gas panel, and exhaust gases from the reactor are used to purge the gas panel. Gases from the reactor may be cooled before flowing to the gas panel. 1. A substrate processing apparatus , comprising:an enclosure;a reactor disposed within the enclosure;a gas panel coupled to the reactor;a gas handler fluidly coupled to the enclosure;a first exhaust conduit coupled to the gas handler and to an exhaust inlet of the gas panel; anda second exhaust conduit coupled to an exhaust outlet of the gas panel and to an exhaust pump.2. The substrate processing apparatus of claim 1 , wherein the gas handler is located in the enclosure.3. The substrate processing apparatus of claim 2 , further comprising a damper disposed in the first exhaust conduit.4. The substrate processing apparatus of claim 3 , further comprising a frame claim 3 , wherein the first exhaust conduit is disposed through an overhead portion of the frame.5. The substrate processing apparatus of claim 4 , further comprising a cooler coupled to the exhaust conduit.6. The substrate processing apparatus of claim 5 , wherein the cooler comprises a liquid collector.7. A substrate processing system claim 5 , comprising:a reactor disposed in a reactor enclosure;a gas panel coupled to the reactor;a supply of exhaust gas coupled to the reactor enclosure; anda common exhaust pathway coupling the reactor enclosure with the gas panel.8. The substrate processing system of claim 7 , wherein the common exhaust pathway couples to the reactor enclosure at an upper portion of the reactor enclosure and to the gas panel at an upper portion of the gas panel.9. The substrate processing system of claim 8 , wherein the common exhaust pathway comprises a gas panel exhaust port at a lower portion of the gas panel.10. The substrate processing system of claim ...

APPARATUS AND METHODS FOR ALIGNMENT OF A SUSCEPTOR

The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber. 1. A thermal processing chamber comprising:a susceptor;a stem coupled to the susceptor; anda motion assembly coupled to the stem, the motion assembly comprising a lateral adjustment device and a tilt adjustment mechanism adapted to position a major surface of the susceptor in plane that is parallel to an X-Y plane of the chamber and position the stem along a longitudinal axis of the chamber.2. The chamber of claim 1 , wherein the motion assembly comprises at least two flexible seals.3. The chamber of claim 2 , wherein one of the at least two flexible seals is substantially limited to movement in an X axis or a Y axis.4. The chamber of claim 2 , wherein one of the at least two flexible seals is substantially limited to movement along the longitudinal axis of the chamber.5. The chamber of claim 2 , wherein the lateral adjustment device comprises an X adjustment plate and a Y adjustment plate that are coupled to adjacent sides of a base plate disposed adjacent to one of the at least two flexible seals.6. The chamber of claim 5 , wherein each of the X adjustment plate and the Y adjustment plate comprise a set screw that is coupled to a housing coupled to the stem.7. The chamber of claim 1 , wherein the motion assembly further comprises a vertical actuator having a base disposed in a plane that is substantially normal to the longitudinal axis claim 1 , and a bracket disposed in a plane that is substantially normal to ...

METHOD FOR MAKING TRANSITION METAL DICHALCOGENIDE CRYSTAL

A method for making a transition metal dichalcogenide crystal having a chemical formula represented as MXis provided, wherein M represents a central transition metal element, and X represents a chalcogen element. The method includes providing a MXpolycrystalline powder, a MXseed crystal, and a transport medium. The MXpolycrystalline powder and the transport medium are placed in a first reaction chamber. The first reaction chamber and the MXseed crystal are placed in a second reaction chamber having a source end and a deposition end opposite to the source end. The first reaction chamber is placed at the source end, and the MXseed crystal is placed at the deposition end. 1. A method of making a transition metal dichalcogenide crystal having a chemical formula represented as MX , wherein M represents a central transition metal element , and X represents a chalcogen element , comprising:{'sub': 2', '2, 'providing MXpolycrystalline powder, MXseed crystals, and a transport medium;'}{'sub': '2', 'providing a first reaction chamber defining an opening at one end of the first reaction chamber, wherein the MXpolycrystalline powder and the transport medium are placed in the first reaction chamber; and'}{'sub': 2', '2, 'providing a second reaction chamber comprising a source end and a deposition end opposite to the source end, wherein the first reaction chamber and the MXseed crystals are placed in the second reaction chamber, the first reaction chamber is placed at the source end, and the MXseed crystals are placed at the deposition end.'}2. The method of claim 1 , wherein the MXpolycrystalline powder is obtained by direct solid-state reactions of a mixture of the central transition metal element M and the chalcogen element X.3. The method of claim 1 , wherein the MXseed crystals comprise a plurality of single crystals.4. The method of claim 3 , wherein average sizes of the MXseed crystals are in a range from 500 μm to 1 mm.5. The method of claim 1 , wherein a method for ...

Heat shield assembly for an epitaxy chamber

Disclosed herein is a heat shield assembly for a processing chamber. The processing chamber includes a body having sidewalls, a bottom and a lid that define an interior volume. The heat shield assembly is disposed in the interior volume, and includes a heat shield and a preheat member. The preheat member includes an inner circumference, and is positioned below the heat shield. A susceptor is disposed in the interior volume and configured to support a substrate, and is positioned within the inner circumference of the preheat member. An opening is positioned between the susceptor and the preheat member. A first section of the opening is proximate to a gas inlet, and is covered by the heat shield. A second section of the annular opening is proximate a gas outlet, and is not covered by the heat shield member.

DOPING CONTROL METHODS AND RELATED SYSTEMS

A system for cleaning dopant contamination in a process chamber is disclosed. The system includes a susceptor and a chamber kit component, a first plurality of lamps configured to heat the susceptor, a second plurality of lamps configured to heat the chamber kit component, and a gas supply configured to provide a chlorine cleaning gas. The system is configured to deposit a layer on a substrate at a deposition temperature and perform an in-situ clean of the process chamber, including the chamber kit component, at the deposition temperature. A method for cleaning dopant contamination includes depositing a layer over a substrate at a deposition temperature, performing an in-situ clean of the process chamber and a process kit component at the deposition temperature, unloading the substrate, and performing a dedicated clean at a clean temperature. In some examples, the clean temperature is about equal to the deposition temperature.

GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer. 1. A group-III nitride substrate comprising: a base material part of a group-III nitride including a front surface , a back surface , and an inner layer between the front surface and the back surface ,wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.2. The group-III nitride substrate according to claim 1 , wherein the front surface of the base material part is a surface for growing a group-III nitride crystal thereon.3. The group-III nitride substrate according to claim 1 , wherein the oxygen concentration of the front surface of the base material part is lower than the oxygen concentration of the inner layer.4. The group-III nitride substrate according to claim 2 , wherein the front surface of the base material part is a +c surface claim 2 , and wherein the back surface of the base material part is a −c surface.5. The group-III nitride substrate according to claim 1 , wherein the carbon concentration of the front surface of the base material part is 5×10[atoms/cm] or more claim 1 , and wherein{'sup': 20', '3, 'the oxygen concentration of the front surface of the base material part is 1×10[atoms/cm] or more.'}6. The group-III nitride substrate according to claim 5 , wherein the carbon concentration of the front surface of the base material part is within a range of 1.5×10to 5×10[atoms/cm] claim 5 , and wherein{'sup': 20', '21', '3, 'the oxygen concentration of the front surface of the base material part is in the range of 1×10to 1×10[atoms/cm].'}7. The group-III nitride substrate according to claim 1 , wherein the oxygen concentration of the base ...

Substrate processing apparatus

Provided is a substrate processing apparatus, and more particularly, a batch-type substrate processing apparatus where processes can be performed independently on a plurality of substrates. The substrate processing apparatus includes a substrate boat including a plurality of partition plates and a plurality of connection rods, an internal reaction tube, a gas supply unit, and an exhaust unit, and a plurality of substrates are loaded to be separated from the partition plates.

EPITAXIAL DEPOSITION REACTOR WITH REFLECTOR EXTERNAL TO THE REACTION CHAMBER AND COOLING METHOD OF A SUSCEPTOR AND SUBSTRATES

The present invention relates to a reactor () for epitaxial deposition of semiconductor material on substrates (), comprising: a reaction chamber () provided with a cavity () defined by a lower wall (), an upper wall () and lateral walls (); a susceptor (), positioned inside said cavity (), and adapted to support and heat substrates () during epitaxial deposition; a heating system () adapted to heat said susceptor (); an upper plate () that is positioned above said upper wall () and that overlies said susceptor () so that it reflects thermal radiation emitted by said susceptor () towards said susceptor (). A liquid flow (LF) is provided in or on said upper plate () to cool said upper plate (). A gaseous flow (GF) is provided between said upper wall () and said upper plate () to promote the transfer of heat from said upper wall () to said upper plate (). 217717173717. Reactor () according to claim 1 , wherein said plate () comprises a first part () claim 1 , wherein said first part () of said plate () overlies said susceptor () claim 1 , and wherein said first part () of said plate () is adapted to move (R claim 1 , T) claim 1 , in particular to rotate (R) claim 1 , in order to reflect differently.32771727173727717717727. Reactor () according to claim 2 , wherein said plate () is divided in a first part () and a second part () wherein said first part () of said plate () overlies said susceptor () claim 2 , wherein said second part () of said plate () is positioned around said first part () of said plate () claim 2 , wherein said first part () of said plate () is adapted to move (R claim 2 , T) claim 2 , in particular to rotate (R) claim 2 , in order to reflect differently claim 2 , and wherein said second part () of said plate () is adapted to be maintained fixed at all times.41727273. Reactor () according to claim 3 , wherein at least one face (A) of said second part () of said plate () is adapted to reflect thermal radiation towards said susceptor ().517171771717. ...

High Throughput Semiconductor Deposition System

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5μm/minute. 1. A method of performing hydride vapor phase epitaxy (HVPE) deposition , the method comprising:providing at least one first source material and at least one first carrier gas flow to a first HVPE mixing zone coupled to a first deposition zone;providing at least one second source material and at least one second carrier gas flow to a second HVPE mixing zone coupled to a second deposition zone;heating the first deposition zone to a first temperature;heating the first HVPE mixing zone to a second temperature;heating the second deposition zone to a third temperature, wherein the third temperature is different from the first temperature;heating the second HVPE mixing zone to a fourth temperature;outputting, from the first HVPE mixing zone into the first deposition zone, first reactant gases produced from the at least one first source material and the at least one first carrier gas flow;outputting, from the second HVPE mixing zone into the second deposition zone, second reactant gases produced from the at least one second source material and the at least one second carrier ...

CRYSTAL FILM, METHOD FOR MANUFACTURING CRYSTAL FILM, VAPOR DEPOSITION APPARATUS AND MULTI-CHAMBER APPARATUS

To improve the single crystallinity of a stacked film in which a ZrOfilm and a YOfilm are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrOfilm and a YOfilm formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05° to 2.0°. 1. A crystal film comprising:a Zr film; and{'sub': 2', '2', '3, 'a stacked film in which a ZrOfilm and a YOfilm are stacked or a YSZ film, formed on said Zr film,'}wherein a peak half-value width when said stacked film or the YSZ film is evaluated by X-ray diffraction is 0.05° to 2.0°.2. The crystal film according to claim 1 , wherein thickness of said Zr film is 0.2 nm to 30 nm.3. The crystal film according to claim 1 , wherein said stacked film or said YSZ film is an oriented film oriented in (100).4. The crystal film according to claim 1 , wherein said crystal film is formed on a substrate having a (100) crystal plane.5. The crystal film according to claim 1 , wherein:on said stacked film or said YSZ film, a Pt film oriented in (100) is formed; anda peak half-value width when said Pt film is evaluated by X-ray diffraction is 0.05° to 2.0°.6. The crystal film according to claim 5 , wherein:dielectric film is formed on said Pt film; and{'sub': '3', 'said dielectric film is represented by a general formula ABO, being a film containing a perovskite material, A including at least one element selected from the group consisting of Al, Y, Na, K, Rb, Cs, La, Sr, Cr, Ag, Ca, Pr, Nd, Bi and an element of the lanthanum series in the periodic table, B including at least one element selected from the group consisting of Al, Ga, In, Nb, Sn, Ti, Ru, Rh, Pd, Re, OSirPt, U, Co, Fe, Ni, Mn, Cr, Cu, Mg, V, Nb, Ta, Mo and W, or being a film containing a bismuth layered-structure ferroelectric crystal having a structure in which a bismuth oxide layer and a perovskite-type structure block are stacked alternately, said perovskite-type structure block ...

Method and apparatus for fabricating free-standing group iii nitride crystals

The method for fabricating a free-standing group III nitride plate ( 6 ) comprises the steps of growing at a growth temperature within a growth reactor ( 7 ) a first group III nitride layer ( 2 ) on a foreign growth substrate ( 1 ); growing at the growth temperature within the growth reactor ( 7 ) a second group III nitride layer ( 5 ) on the first group III nitride layer ( 2 ); and separating by laser lift-off the second group III nitride layer ( 5 ) from the growth substrate ( 1 ) so as to form a free-standing group III nitride plate ( 6 ). According to the present invention, the step of separating the second group III nitride layer ( 5 ) from the growth substrate ( 6 ) is performed at the growth temperature and within the growth reactor ( 7 ), and the method further comprises a step of treating the first group III nitride layer ( 1 ) by laser treatment at the growth temperature within the growth reactor ( 7 ) so as to provide stress relaxation areas ( 4 ) in the first group III nitride layer ( 2 ).

CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS

A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis. 1. A flow inlet element for a chemical vapor deposition reactor comprising a plurality of elongated elements extending parallel to one another and mechanically attached to one another so that the elongated elements cooperatively define a plate having upstream and downstream sides , the plate having base inlet openings extending from the upstream side to the downstream side between adjacent ones of the elongated elements , the flow inlet element further comprising a structure defining one or more gas spaces upstream of the plate and communicating with the base inlet openings.2. A flow inlet element as claimed in wherein at least some of the elongated elements are tubular claim 1 , each tubular element defining one or more gas distribution channels.3. A flow inlet element as claimed in further comprising additional gas inlets communicating with the gas distribution channels claim 1 , the additional gas inlets being open to the downstream side of the plate.4. A flow inlet element as claimed in further comprising elongated diffusers extending along at least some of the tubular elements and projecting downstream from such tubular elements claim 2 , at least some of the additional gas inlets extending through the diffusers.5. A flow inlet element as claimed in further comprising one or more manifolds connected to the tubular elements at ends of the tubular elements and communicating with the gas distribution channels.6. A chemical vapor deposition ...

PROCESS COMPONENT AND METHOD TO IMPROVE MOCVD REACTION PROCESS

The invention is related to a process component and the method to improve the MOCVD reaction. The principle of the improvement is to cover a compact protection film on the stainless steel body in the MOCVD reaction chamber. Said film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. Said film is a compound composed of at least one of the Al, Ga and Mg and at least one of the oxygen or nitrogen, or the other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. Said film will not react with the gases in the MOCVD process or add contaminants to the MOCVD reaction chamber. Therefore, it could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has the compact organization with the porosity less than 1%, and the thickness of the protection film is 1 nm to 0.5 mm. 1. A method for fabricating a showerhead for MOCVD chamber , comprising:fabricating an upper cover plate out of stainless steel;fabricating a gas distribution plate out of stainless steel;fabricating a water cooling plate out of stainless steel;coating the cover plate, gas distribution plate and water cooling plate with a protective film;assembling the cover plate, gas distribution plate and water cooling plate into the showerhead after the coating.2. The method of claim 1 , wherein the coating comprises forming a layer of a compound of at least one of Al claim 1 , Ga and Mg claim 1 , and at least one of nitrogen and oxygen claim 1 , over surfaces of the cover plate claim 1 , gas distribution plate and water cooling plate.3. The method of claim 2 , wherein the coating is made to a thickness of 1 nm to 10 μm.4. The method of claim 3 , wherein fabricating the cover plate claim 3 , gas distribution plate and water cooling plate comprises forming surfaces of the stainless steel to roughness ...

GAS PURGE SYSTEM AND METHOD FOR OUTGASSING CONTROL

Embodiments disclosed herein generally relate to a system, method, and apparatus for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed. 1. A substrate processing apparatus , comprising:a loadlock chamber having a body defining a volume therein;a support structure disposed in the volume, the support structure having a plurality of support members; and a gas supply line operatively connected to a gas source; and', 'a plurality of distribution lines, wherein each distribution line is operatively connected to and extends from the gas supply line, wherein at least one distribution line is disposed adjacent to each support member, wherein each distribution line has a plurality of gas holes disposed therein, wherein each distribution line defines a plane, and wherein each gas hole is angled toward a corresponding support member relative to the plane., 'a gas distribution structure disposed in the volume adjacent the support structure, the gas distribution structure comprising2. The substrate processing apparatus of claim 1 , wherein each distribution line is an arcuate distribution line having a radius between about four inches and about twelve inches.3. The substrate processing apparatus of claim 2 , wherein each distribution line has an angular extent between about 100 degrees and about 150 degrees.4. The substrate processing apparatus of claim 1 , wherein each gas hole is disposed at the plane of each distribution line.5. The substrate processing apparatus of claim 1 , wherein each gas hole has a gas flow axis that ...

Gas hydrate conversion system for harvesting hydrocarbon hydrate deposits

In one embodiment, a gas hydrate conversion system is provided comprising a floating factory, an appendage for harvesting a gas hydrate from an oceanic hydrate deposit, and one or more storage tanks. The floating factory comprises one or more heat exchange assemblies, one or more heat pump assemblies and an engine. In another embodiment, a method for harvesting hydrocarbon hydrate deposits is provided, the method comprising providing a gas hydrate conversion system; inducing release of methane from an oceanic hydrate deposit; capturing the methane from a primary methane capture zone and/or a secondary methane capture zone; and converting the methane to hydrogen and carbon.

APPARATUS FOR DEPOSITING A THIN FILM

An apparatus is provided for depositing a thin film. The apparatus includes a chamber, a susceptor disposed in the chamber and supporting a substrate, a reflection housing disposed outside the chamber, a light source unit disposed in the reflection housing and irradiating light to the susceptor, and a light controlling unit blocking at least a portion of an irradiation path of the light to control an irradiation area of the light on the susceptor. At least a portion of the light controlling unit is disposed in the reflection housing. 1. An apparatus for depositing a thin film , the apparatus comprising:a chamber;a susceptor disposed in the chamber, the susceptor is configured to support a substrate;a reflection housing disposed outside the chamber;a light source unit disposed in the reflection housing, the light source unit irradiating light to the susceptor; anda light controlling unit blocking at least a portion of an irradiation path of the light to control an irradiation area of the light on the susceptor,wherein at least a portion of the light controlling unit is disposed between the light source and the susceptor.2. The apparatus of claim 1 , wherein the light controlling unit comprises:a blocking part blocking the light; anda base part coupling the blocking part to the reflection housing.3. The apparatus of claim 2 , wherein the blocking part comprises:a core portion; anda coating layer surrounding the core portion.4. The apparatus of claim 3 , wherein the core portion includes a metal material claim 3 , andwherein the coating layer is a reflection layer.5. The apparatus of claim 2 , wherein the blocking part has a ring shape when viewed from a plan view.6. The apparatus of claim 2 , wherein the blocking part has a cross-sectional shape that corresponds with a parallelogram.7. The apparatus of claim 2 , wherein the blocking part is coaxially aligned with respect to a central axis of the susceptor.8. The apparatus of claim 5 , wherein the blocking part ...

LINER FOR PROCESSING CHAMBER

Embodiments herein relate to chamber liners with a multi-piece design for use in processing chambers. The multi-piece design can have an inner portion and an outer portion. A portion of the inner surface of the outer portion may be designed to be in contact with the outer surface of the inner portion at a single junction point, creating a thermal barrier between the inner portion and outer portion, thus reducing heat transfer from the inner portion and outer portion. The thermal barrier creates higher temperatures at the chamber liner inner surface and therefore leads to shorter heat up times within the chamber. Additionally, the thermal barrier also creates lower temperatures near the base ring and outer surface of the outer ring, thereby protecting the chamber walls and requiring less thermal regulation/dissipation at the chamber walls. 2. The liner of claim 1 , wherein the contact area is less than a non-contact area between the inner surface of the outer portion and the outer surface of the inner portion.3. The liner of claim 2 , wherein the contact area is less than 10% the non-contact area.4. The liner of claim 1 , wherein the inner portion and the outer portion are at least partially separated by a gap.5. The liner of claim 1 , wherein the inner portion and the outer portion are made of quartz.6. A liner for a processing chamber claim 1 , comprising:an outer portion with an inner surface and an outer surface;an inner portion with an inner surface and an outer surface;a first coating material disposed on at least a portion of the inner surface of the inner portion; and a portion of the inner surface of the outer portion is in contact with the outer surface of the inner portion at at least one junction point having a contact area between the portion of the inner surface of the outer portion and the outer surface of the inner portion; and', 'the first coating material has a higher absorption coefficient than the second coating material., 'a second coating ...

Apparatus for impurity layered epitaxy

Embodiments of the disclosure relate to an apparatus for processing a semiconductor substrate. The apparatus includes a process chamber having a substrate support for supporting a substrate, a lower dome and an upper dome opposing the lower dome, a plurality of gas injects disposed within a sidewall of the process chamber. The apparatus includes a gas delivery system coupled to the process chamber via the plurality of gas injects, the gas delivery system includes a gas conduit providing one or more chemical species to the plurality of gas injects via a first fluid line, a dopant source providing one or more dopants to the plurality of gas injects via a second fluid line, and a fast switching valve disposed between the second fluid line and the process chamber, wherein the fast switching valve switches flowing of the one or more dopants between the process chamber and an exhaust.

SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS

A silicon carbide single crystal manufacturing apparatus includes a vacuum chamber, a pedestal on which a seed crystal is disposed, an inlet of source gas, a reaction chamber extending from a bottom surface of the vacuum chamber toward the pedestal, a first heating device disposed around an outer periphery of the reaction chamber, a second heating device disposed around an outer periphery of the pedestal, and an outlet disposed outside the first and second heating devices in the vacuum chamber. After the source gas supplied from the reaction chamber is supplied toward the pedestal, the source gas is let flow outward in a radial direction of the silicon carbide single crystal between the reaction chamber and the silicon carbide single crystal and is discharged through the outlet. 1. A silicon carbide single crystal manufacturing apparatus comprising:a vacuum chamber;a pedestal on which a seed crystal made of a silicon carbide single crystal substrate is disposed, the pedestal disposed in the vacuum chamber;an inlet disposed on a bottom surface of the vacuum chamber and introducing source gas of silicon carbide from below the seed crystal;a reaction chamber extending from the bottom surface of the vacuum chamber toward the pedestal in the vacuum chamber, the reaction chamber including a cylindrical member having a hollow portion through which the source gas passes, the reaction chamber decomposing the source gas by heating and supplying the decomposed source gas toward the seed crystal;a first heating device disposed around an outer periphery of the reaction chamber and heating the reaction chamber;a second heating device disposed around an outer periphery of the pedestal and keeping a high temperature of a growth surface of a silicon carbide single crystal grown on a surface of the seed crystal; andan outlet disposed outside the first and second heating devices in the vacuum chamber and discharging unreacted gas in the source gas,wherein after the source gas supplied ...

Cvd reactor chamber with resistive heating for silicon carbide deposition

A CVD reactor for deposition of silicon carbide material on silicon carbide substrates, may comprise: an upper gas manifold and a lower gas manifold; and a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, a multiplicity of planar walls across the width of the box, the walls being equally spaced in a row facing each other and defining a row of channels within the box, the walls comprising mounting fixtures for a plurality of substrates and at least one electrically resistive heater element; wherein the upper gas manifold and the lower gas manifold are configured to attach to the upper and lower surfaces of the substrate carrier, respectively, connect with upper and lower ends of the channels, and isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein the channels are numbered in order along the row; and wherein said electrically resistive heater elements and said mounting fixtures are coated with a material able to withstand exposure to (i) chemicals for removal of silicon carbide, such as ClF 3 , and (ii) process temperatures up to 1700° C., examples of the material including tantalum carbide, diamond and boron nitride.

LAYERED SUBSTRATE WITH A MISCUT ANGLE COMPRISING A SILICON SINGLE CRYSTAL SUBSTRATE AND A GROUP-III NITRIDE SINGLE CRYSTAL LAYER

A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a <0001> axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved. 122-. (canceled)23. A layered substrate comprising a silicon single crystal substrate and a wurtzite group-III nitride single crystal layer , when:an axis orthogonal to a normal line on a surface of the silicon single crystal substrate and overlapping a <11-2> axis of the silicon single crystal when observed from the direction of the normal line is a y-axis;an axis orthogonal to the normal line and the y-axis and configuring three orthogonal axes is an x-axis;a plane including the normal line and the y-axis is an ny-plane;a plane including the normal line and the x-axis is an nx-plane;an axis wherein a <111> axis of the silicon single crystal is projected onto the ny-plane is a <111>ny axis;an axis wherein the <111> axis is projected onto the nx-plane is a <111>nx axis;an axis wherein a <0001> axis of the group-III nitride single crystal is projected onto the ny-plane is a <0001>ny axis;an axis wherein the <0001> axis is projected onto the nx-plane is a <0001>nx axis;a rotation angle measured in the ny-plane from the normal line to the <111>ny axis is θx0;a rotation angle measured in the nx-plane from the normal line to the <111>nx axis is θy0;a rotation angle measured in the ny plane from the normal line to the <0001>ny axis is θx1; anda ...

SUBSTRATE LIFT MECHANISM AND REACTOR INCLUDING SAME

A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor. 1. A reactor comprising a common substrate processing and transfer region , the reactor comprising:a reaction chamber comprising a reaction region;a susceptor having a top surface within the reaction region; and at least one lift pin;', 'a lift pin support member that removably engages to the at least one pin; and', 'a movable shaft coupled to the lift pin support member,, 'a substrate lift mechanism comprisingwherein the substrate lift mechanism causes the at least one lift pin to extend through a width of the susceptor and above the surface.2. The reactor of claim 1 , wherein the moveable shaft traverses a distance of about 5 mm to about 25 mm during a substrate transfer process.3. The reactor of claim 1 , wherein a length of the at least one lift pin ranges from about 20 mm to about 40 mm.4. The reactor of claim 1 , wherein the at least one lift pin comprises a top surface claim 1 , and wherein the substrate lift mechanism causes the top surface to extend from below the top surface to a distance up to about 22 mm above the top surface.5. The reactor of claim 1 , wherein the susceptor comprises a center region and a peripheral region and wherein a width of the center region is greater than a width of the peripheral region.6. The reactor of claim 5 , wherein the width of the peripheral region ranges from about 3 mm to about 6.5 mm.7. The reactor of claim 5 , wherein the width of the center region ranges from about 6 mm to about 10 mm.8. The reactor of claim 5 , wherein the reactor further comprises at least one thermocouple having an end claim ...

NITRIDE SEMICONDUCTOR GROWTH APPARATUS, AND EPITAXIAL WAFER FOR NITRIDE SEMICONDUCTOR POWER DEVICE

A nitride semiconductor growth apparatus of the present invention comprises a chamber into which a reactive gas containing nitrogen is to be introduced as a material gas and a reaction part which is placed in the chamber and in which the material gas is brought into reaction to grow a nitride semiconductor. In the nitride semiconductor growth apparatus, in a region which includes a reaction part and part of an upstream side from a reaction part with respect to a flow of a material gas, portions to be in contact with the material gas (a gas introducing part, a current introducing part and a view port part and the like) are made from non-copper material (i.e., material containing no copper). 15-. (canceled)6. A nitride semiconductor growth apparatus comprising:a chamber into which a reactive gas containing nitrogen is to be introduced as a material gas; anda reaction part which is placed in the chamber and in which the material gas is brought into reaction to grow a nitride semiconductor, whereinin a region which includes the reaction part and part of an upstream side from the reaction part with respect to a flow of the material gas, a portion to be in contact with the material gas is made from non-copper material.7. The nitride semiconductor growth apparatus as claimed in claim 6 , further comprisinga sealing part for holding a vacuum in the chamber or confining the material gas within the chamber, whereinthe sealing part has a sealing member made from non-copper material.8. The nitride semiconductor growth apparatus as claimed in claim 7 , whereinthe sealing member isat least one of an O-ring made from fluororubber, a PTFE packing, or a wire made from indium.9. The nitride semiconductor growth apparatus as claimed in claim 6 , whereinthe reactive gas containing nitrogen is ammonia.10. An epitaxial wafer for nitride semiconductor power devices which is grown by the nitride semiconductor growth apparatus as defined in . The present invention relates to a nitride ...

METHOD AND APPARATUS FOR SURFACE PREPARATION PRIOR TO EPITAXIAL DEPOSITION

During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber. 1. An apparatus for preparing wafers prior to epitaxial deposition , the apparatus comprising:a dielectric vessel within a metal enclosure, the dielectric vessel forming a plasma volume which is in fluid communication with an exhaust manifold, and the exhaust manifold connected to a vacuum pumping line;a support pedestal positioned adjacent to the plasma volume, the support pedestal configured to support a semiconductor wafer and raise a temperature of the semiconductor wafer to at least 300° C.;a supply of hydrogen gas and controller for controlling a flow thereof, the hydrogen gas flowed from the supply through tubing to one or more gas inlets of the dielectric vessel;an induction coil disposed outside of and proximate to at least one side of the dielectric vessel;a radio frequency (RF) power source connected through an impedance matching circuit to the induction coil;a slotted electrostatic shield that is electrically grounded and positioned between the induction coil and the dielectric vessel; anda protective liner that is ...

HONEYCOMB MULTI-ZONE GAS DISTRIBUTION PLATE

Embodiments provided herein generally relate to an apparatus for gas delivering in a semiconductor process chamber. The apparatus may be a gas distribution plate that has a plurality of through holes and a plurality of blind holes formed therein. Process gases are provided into a processing volume of the semiconductor process chamber through the through holes of the gas distribution plate. The blind holes are utilized to control the temperature of the gas distribution plate using a phase change material. 1. A gas distribution plate , comprising:a first surface; anda second surface, wherein a plurality of through holes extend from the first surface to the second surface and a plurality of blind holes partially extend from the first surface toward the second surface.2. The gas distribution plate of claim 1 , wherein the through holes and the blind holes have a hexagonal tiling arrangement.3. The gas distribution plate of claim 2 , wherein the through holes and the blind holes are staggered.4. The gas distribution plate of claim 1 , further comprising an interface plate disposed on the gas distribution plate.5. The gas distribution plate of claim 4 , wherein the interface plate has a surface facing the gas distribution plate claim 4 , and the surface is coated with a reflective or absorptive coating.6. The gas distribution plate of claim 4 , wherein the interface plate includes a plurality of through holes claim 4 , wherein each through hole of the plurality of through holes of the interface plate is aligned with a through hole of the plurality of through holes in the gas distribution plate.7. The gas distribution plate of claim 4 , wherein the interface plate includes two or more openings adjacent each blind hole in the gas distribution plate.8. A process chamber claim 4 , comprising:one or more walls defining a processing region; a first surface; and', 'a second surface, wherein a plurality of through holes extend from the first surface to the second surface and a ...

LINER FOR EPI CHAMBER

Embodiments disclosed herein describe a liner assembly including a plurality of individually separated gas passages. The liner assembly provides control of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to the present embodiments. 1. A liner assembly , comprising: an outer surface and an inner surface, the outer surface having an outer circumference less than a circumference of the semiconductor process chamber, the inner surface forming the walls of a process volume;', 'a plurality of gas passages formed in connection with the cylindrical body;', 'an exhaust port positioned opposite to the plurality of gas passages;', 'a crossflow port positioned non parallel to the exhaust port; and', 'a thermal sensing port positioned separate from the crossflow port., 'a cylindrical body having2. The liner assembly of claim 1 , wherein the thermal sensing port claim 1 , the crossflow port claim 1 , the exhaust port and the plurality of gas passages are in a shared plane at the inner surface.3. The liner assembly of claim 2 , wherein the crossflow port has an orientation to direct gas flow outside of the shared plane.4. The liner assembly of claim 1 , wherein the plurality of gas passages have an entrance formed through the outer wall and an exit formed through the inner wall claim 1 , wherein the entrances and exits are not coplanar with one another.54. The liner assembly of claim 1 , wherein at least one of the entrances is fluidly connected with more than one of the exits.6. The liner assembly of claim 4 , wherein at least one of the exits is fluidly connected with more than one of the entrances.7. The liner assembly of claim 1 , wherein the crossflow port is positioned at about the 0 degree position and a midpoint of the plurality of gas passages is positioned at the 90 ...

UPPER DOME WITH INJECTION ASSEMBLY

Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome. 1. A gas delivery apparatus , comprising:a quartz dome having a plurality of holes formed therein, wherein the plurality of holes are arranged in a linear array;a plurality of tubes coupled to and extending from the plurality of holes; anda flange plate coupled to at least one of the plurality of tubes.2. The apparatus of claim 1 , wherein each tube of the plurality of tubes comprises quartz.3. The apparatus of claim 2 , wherein each tube of the plurality of tubes comprises a thermal break member disposed on the tube between the quartz dome and the flange plate.4. The apparatus of claim 3 , wherein each thermal break member comprises a radiation blocking member.5. The apparatus of claim 4 , wherein the radiation blocking member is a black quartz material or a bubble quartz material.6. The apparatus of claim 5 , wherein the plurality of holes arranged in a linear array are offset from a diameter of the quartz dome.7. The apparatus of claim 1 , wherein the flange plate comprises quartz.8. The apparatus of claim 1 , wherein the flange plate is quartz welded to the plurality of tubes.9. The apparatus of claim 1 , further comprising a metallic clamp member surrounding at least a portion of the flange plate.10. The apparatus of claim 9 , wherein a compliant member is disposed between the flange plate and the metallic clamp member.11. A gas delivery apparatus claim 9 , comprising:a light ...

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate

A silicon carbide epitaxial substrate having a main surface (second main surface) includes: a base substrate; and a silicon carbide epitaxial layer formed on the base substrate and including the main surface (second main surface), the second main surface having a surface roughness of 0.6 nm or less, a ratio of standard deviation of a nitrogen concentration in the silicon carbide epitaxial layer at a surface layer including the main surface (second main surface) within a plane of the silicon carbide epitaxial substrate to an average value of the nitrogen concentration in the silicon carbide epitaxial layer at the surface layer within the plane of the silicon carbide epitaxial substrate being 15% or less.

Production method of epitaxial silicon wafer, vapor deposition equipment and valve

A method for producing an epitaxial silicon wafer comprises applying a vapor deposition on a silicon wafer to produce the epitaxial silicon wafer. Vapor deposition equipment, in which the vapor deposition is conducted, at least includes a chamber, and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. A valve that includes a diaphragm for regulating a flow of the hydrogen chloride gas from an inlet channel to an outlet channel is disposed in the hydrogen-chloride-gas supply apparatus. A W-containing Ni—Cr—Mo alloy material subjected to a passivation treatment is used for the diaphragm. When a maintenance work is to be done to the inside of the chamber, the hydrogen chloride gas is supplied from the hydrogen-chloride-gas supply apparatus into the chamber.

Upper dome for epi chamber

Embodiments described herein relate to a dome assembly. The dome assembly includes an upper dome comprising a convex arc central window, and an upper peripheral flange engaging the central window at a circumference of the central window.

GROWTH REACTOR FOR GALLIUM-NITRIDE CRYSTALS USING AMMONIA AND HYDROGEN CHLORIDE

The present invention in one preferred embodiment discloses a new design of HVPE reactor, which can grow gallium nitride for more than one day without interruption. To avoid clogging in the exhaust system, a second reactor chamber is added after a main reactor where GaN is produced. The second reactor chamber may be configured to enhance ammonium chloride formation, and the powder may be collected efficiently in it. To avoid ammonium chloride formation in the main reactor, the connection between the main reactor and the second reaction chamber can be maintained at elevated temperature. In addition, the second reactor chamber may have two or more exhaust lines. If one exhaust line becomes clogged with powder, the valve for an alternative exhaust line may open and the valve for the clogged line may be closed to avoid overpressuring the system. The quartz-made main reactor may have e.g. a pyrolytic boron nitride liner to collect polycrystalline gallium nitride efficiently. The new HVPE reactor which can grow gallium nitride crystals for more than 1 day may produce enough source material for ammonothermal growth. Single crystalline gallium nitride and polycrystalline gallium nitride from the HVPE reactor may be used as seed crystals and a nutrient for ammonothermal group III-nitride growth. 1. A method of growing a group III-nitride material comprising(a) contacting ammonia vapor and at least one group III-halide gas in a reaction chamber of a reactor;(b) epitaxially depositing the group III-nitride crystalline material onto a first substrate in a first reactor zone, producing an exhaust gas comprising an ammonium halide that passes to a transition zone of the reactor;(c) maintaining the exhaust gas in the transition zone at a temperature sufficient to maintain the ammonium halide in gas phase;(d) removing the exhaust gas from the transition zone and into a second zone of the reactor, the second zone having a larger cross-sectional area than a cross-sectional area of ...

EPI PRE-HEAT RING

Embodiments of the present disclosure generally relate to a process chamber having a pre-heat ring for heating the process gas. In one embodiment, the process chamber includes a chamber body defining an interior processing region, a substrate support disposed within the chamber body, the substrate support having a substrate support surface for supporting a substrate, and a pre-heat ring positioned on a ring support disposed within the chamber body, wherein a portion of the pre-heat ring is tilted downwardly by a predetermined angle towards the gas exhaust side with respect to the substrate support surface to promote the purge gas flowing more through the gas exhaust side than the gas injection side. 1. A ring assembly for use in a semiconductor processing chamber , comprising: a first peripheral portion; and', 'a second peripheral portion, wherein the second peripheral portion is inclined by an angle with respect to the first peripheral portion., 'an annular body having a central opening, an inner peripheral edge and an outer peripheral edge, the annular body comprising2. The ring assembly of claim 1 , wherein the second peripheral portion is substantially symmetric to the first peripheral portion.3. The ring assembly of claim 1 , wherein the second peripheral portion is tilted downwardly with respect to an upper surface of the first peripheral portion.4. The ring assembly of claim 1 , wherein the angle is about 2° to about 6°.5. A process chamber for processing a substrate claim 1 , comprising:a chamber body defining an interior processing region;a substrate support disposed within the chamber body, the substrate support having a substrate support surface; anda pre-heat ring positioned on a ring support disposed within the chamber body, wherein a portion of the pre-heat ring is inclined by an angle with respect to the substrate support surface.6. The process chamber of claim 5 , wherein the pre-heat ring is an annular body having a central opening sized to dispose ...

Protecting a target pump interior with an ALD coating

An apparatus and method for protecting a target pump interior, where a target pump ( 10 ) inlet is provided with an inlet manifold ( 20 ) and a target pump outlet with an exhaust manifold ( 30 ). The target pump interior is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases according to an ALD method via the inlet manifold into the target pump interior and outlet of reaction residue via the exhaust manifold, while the target pump is kept running or not running. A technical effect of the invention is protecting a pump interior, which can be also an assembled pump interior, by a confomral protective coating.

DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment. 1. A system , comprising:an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate;a transfer chamber; and a plurality of chamber walls;', 'a gas panel;', 'at least one heating mechanism;', 'a substrate support;', 'a pump; and', 'an arsenic detecting device, wherein each of the gas panel, the at least one heating mechanism, the substrate support, the pump, and the arsenic detecting device is connected to at least one of the plurality of chamber walls., 'a degassing chamber for reducing arsenic outgassing on the substrate, wherein each of the epitaxial deposition chamber and the degassing chamber is connected to the transfer chamber, and wherein the degassing chamber comprises2. The system of claim 1 , wherein the at least one heating mechanism is an infrared lamp.3. The system of claim 1 , wherein the at least one heating mechanism is a resistive heater.4. The system of claim 1 , wherein the substrate support supports a single substrate.5. The system of claim 1 , wherein the substrate support supports a plurality of substrates.6. The system of claim 1 , further comprising a second epitaxial deposition chamber.7. ...

Film forming apparatus and film forming method

According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

Vapor-Liquid Reaction Device, Reaction Tube, Film Forming Apparatus

This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber. 1. A vapor-liquid reaction device comprising:a vapor-liquid reaction chamber accommodating a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber, with a produced gas being produced in the vapor-liquid reaction chamber by a vapor-liquid reaction between a source gas and the molten metal while a mixed gas A, supplied to an upper portion at one end side in a length direction of the internal space and containing the source gas and a carrier gas that is at least one of nitrogen gas or argon gas, is flowing along the length direction, and a mixed gas B containing the produced gas and the carrier gas being discharged from an upper portion at another end side in the length direction of the internal space; anda projecting member projecting into the internal space from a ceiling face adjoining the internal space of the vapor-liquid reaction chamber at a projection angle that is an obtuse angle at one end side in the length direction of the projecting member, and including a slit allowing passage of gas along the length direction.2. The vapor-liquid reaction device of claim 1 , wherein the projection angle is from 110° to 160°.3. The vapor-liquid reaction device of claim 1 , wherein the projecting member includes a plate-shaped member projecting from the ceiling face into the internal space.4. The vapor-liquid reaction device of claim 3 , wherein the plate-shaped member includes a bent portion bent toward the length direction one end side with respect to a projection direction of the plate-shaped member from the ceiling face into the internal space.5. The vapor-liquid reaction device of claim 4 , wherein:the plate-shaped member includes a projecting portion that projects from the ceiling ...

GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE

The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant. Therein, the compound semiconductor crystal is deposited at a surface of the substrate, while a liquid phase can form on the growing crystal. 1. (canceled)2. The process according to claim 1 , adding the reducing agent comprises adding the reducing agent in an amount that generates formation of an elementary metal of the first element claim 1 , on a surface of the crystal growth zone.3. (canceled)4. The process according to claim 14 , wherein the compound semiconductor is selected from GaN claim 14 , AlN claim 14 , GaAlN (0 Подробнее

CRYSTAL GROWTH APPARATUS

A crystal growth apparatus including: a heat source, a crucible including a container body in which a raw material can be received and a lid part on which a seed crystal can be mounted; a first heat insulating part which is disposed externally of the crucible and in which a first through-hole penetrating in a thickness direction is provided; a second heat insulating part which is disposed externally of the first heat insulating part and in which a second through-hole penetrating in a thickness direction is provided; a moving mechanism configured to move the first heat insulating part and the second heat insulating part relative to each other; and a radiation type temperature measuring unit configured to measure a temperature of the crucible via the first through-hole and the second through-hole. 1. A crystal growth apparatus comprising:a heat source;a crucible including a container body in which a raw material is to be received and a lid part on which a seed crystal is to be mounted;a first heat insulating part which is disposed externally of the crucible and in which at least one first through-hole penetrating in a thickness direction is provided;a second heat insulating part which is disposed externally of the first heat insulating part and in which at least one second through-hole penetrating in a thickness direction is provided;a moving mechanism configured to move the first heat insulating part and the second heat insulating part relative to each other; anda radiation type temperature measuring unit configured to measure a temperature of the crucible via the first through-hole and the second through-hole.2. The crystal growth apparatus according to claim 1 , wherein:the first heat insulating part is movably provided along with the crucible;the second heat insulating part is fixed to a furnace body; andthe moving mechanism is configured to move both the crucible and the first heat insulating part relative to the second heat insulating part.3. The crystal growth ...

MODULAR REACTOR FOR MICROWAVE PLASMA-ASSISTED DEPOSITION

The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device. 1. A microwave plasma-assisted modular deposition reactor for manufacturing synthetic diamond , said reactor comprising:a microwave generator configured to generate microwaves, the frequency of which is between 300 MHz and 3000 MHz,a resonant cavity formed, at least in part, by cylindrical inner walls of a reactor enclosure,a gas inlet system adapted to supply gases within the resonant cavity,a gas output module adapted to remove said gases from the resonant cavity,a wave coupling module adapted to transfer the microwaves from the microwave generator to the resonant cavity in order to allow the formation of a plasma,a growth support present in the resonant cavity, andat least three modulation elements, said modulation elements each being selected from:a crown adapted to be positioned between a first enclosure part and a second enclosure part in order to change a shape and/or volume of the resonant cavity, and a seal system, allowing for the ...

FILM GROWTH APPARATUS, FILM GROWTH METHOD AND MAINTENANCE METHOD OF FILM GROWTH APPARATUS

A film growth apparatus according to one aspect of the present disclosure includes: a reactor configured to perform film growth processing on a substrate; an exhaust configured to discharge an exhaust gas from the reactor to the outside; a first valve including a valving element, the first valve provided in a pipe connecting the reactor with the exhaust and configured to control a pressure of the reactor by a position of the valving element; a valving element driver configured to cause the valving element to operate; and a valve controller including a closed position storage configured to store a closed position of the valving element, an opening degree controller configured to control the position of the valving element operated by the valving element driver, and a closed position shifter configured to detect a load of the valving element driver and shift the closed position in a case where the load exceeds a predetermined reference value. 1. A film growth apparatus comprising:a reactor configured to perform film growth processing on a substrate;an exhaust configured to discharge an exhaust gas from the reactor to the outside;a first valve including a valving element, the first valve provided in a pipe connecting the reactor with the exhaust and configured to control a pressure of the reactor by a position of the valving element;a valving element driver configured to cause the valving element to operate; anda valve controller including a closed position storage configured to store a closed position of the valving element, an opening degree controller configured to control the position of the valving element operated by the valving element driver, and a closed position shifter configured to detect a load of the valving element driver and shift the closed position in a case where the load exceeds a predetermined reference value.2. The film growth apparatus according to claim 1 , wherein the valve controller further includes a closed position threshold determiner ...

APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND METHOD FOR PRODUCING THE SAME

Apparatus and method for producing a Group III nitride crystal are to be provided. The apparatus for producing a Group III nitride crystal, contains: a chamber; a nitrogen element-containing gas supplying port for supplying a nitrogen element-containing gas to the chamber; a compound gas supplying port for supplying a compound gas of the Group III element to the chamber, so as to mix the compound gas with the nitrogen element-containing gas; a discharging port for discharging the compound gas and the nitrogen element-containing gas thus mixed, outside the chamber; a holder for holding a seed substrate at a position that is on a downstream side of a mixing point of the compound gas and the nitrogen element-containing gas and is an upstream side of the discharging port; a first heater for heating the seed substrate; and a second heater for heating a space between the mixing point and the seed substrate to a temperature that is higher than a temperature heated by the first heater. 1. An apparatus for producing a Group III nitride crystal , comprising:a chamber;a nitrogen element-containing gas supplying port configured to supply a nitrogen element-containing gas to the chamber;a compound gas supplying port configured to supply a compound gas of a Group III element to the chamber and mix the compound gas with the nitrogen element-containing gas;a discharging port configured to discharge the compound gas mixed with the nitrogen element-containing gas outside of the chamber;a holder configured to hold a seed substrate at a position that is on a downstream side of a mixing point of the compound gas and the nitrogen element-containing gas and is an upstream side of the discharging port;a first heater configured to heat the seed substrate; anda second heater configured to heat a space between the mixing point and the seed substrate to a temperature that is higher than a temperature heated by the first heater.2. The apparatus for producing a Group III nitride crystal ...

VAPOR DEPOSITION APPARATUS

There is provided a vapor phase deposition apparatus including: a reaction chamber having a susceptor with a wafer mounted thereon and depositing and growing an epitaxial thin film on the wafer; a housing having the reaction chamber disposed therein and having a window opened and closed to allow the wafer to be loaded into or unloaded from the wafer reaction chamber; and an exhaust unit discharging gas from within the housing to the outside to adjust internal pressure of the housing. 17.-. (canceled)8. A vapor phase deposition apparatus , comprising:a reaction chamber having a susceptor with a wafer mounted thereon and depositing and growing an epitaxial thin film on the wafer;a housing having the reaction chamber disposed therein and having a window opened and closed to allow the wafer to be loaded into or unloaded from the reaction chamber; andan exhaust unit discharging gas from within the housing to the outside to adjust internal pressure of the housing.9. The vapor phase deposition apparatus of claim 8 , wherein one or more windows are disposed in the proximity of the reaction chamber and are disposed to face the reaction chamber.10. The vapor phase deposition apparatus of claim 9 , wherein the one or more windows are provided in front and rear surfaces of the housing with the reaction chamber interposed therebetween claim 9 , or provided in one of front claim 9 , rear and lateral surfaces of the housing.11. The vapor phase deposition apparatus of claim 8 , wherein the window has a structure sloped at a predetermined tilt toward an upper portion of the housing.12. The vapor phase deposition apparatus of claim 8 , further comprising: a driving unit moving the window vertically or horizontally with respect to a lower portion of the housing to open or close the window.13. The vapor phase deposition apparatus of claim 12 , wherein the driving unit comprises a cylinder member having a piston connected to the window.14. The vapor phase deposition apparatus of claim 8 ...

LOWER SIDE WALL FOR EPITAXIAL GROWTH APPARATUS

Embodiments described herein relate to a lower side wall for use in a processing chamber. a lower side wall for use in a processing chamber is disclosed herein. The lower side wall includes an inner circumference, an outer circumference, a top surface, a plurality of flanges, and a first concave portion. The outer circumference is concentric with the inner circumference. The plurality of flanges project from the inner circumference. The first concave portion includes a plurality of grooves arranged along a circumferential direction of the lower side wall. Each groove has an arc shape such that the plurality of grooves concentrate a gas when the gas contacts the plurality of grooves. 1. A lower side wall for use in a processing chamber , the lower side wall comprising: an inner circumference;', 'an outer circumference concentric with the inner circumference and sharing a center axis;', 'a top surface;', 'a plurality of flanges projecting from the inner circumference; and', 'a plurality of grooves formed in the first concave portion and isolated from the inner circumference by the annular body, the grooves arranged substantially parallel to the center axis along a circumferential direction of the lower side wall, each groove having a cross-sectional curved profile such that the plurality of grooves concentrate a gas when the gas comes into contact with the plurality of grooves, wherein the cross-sectional profile of a first groove of the plurality of grooves and a last groove of the plurality of grooves are radially aligned with the center axis.', 'a first concave portion formed in the outer circumference, the first concave portion further comprising], 'an annular body comprising2. The lower side wall of claim 1 , further comprising:a second concave portion formed in the outer circumference, the second concave portion formed opposite the first concave portion.3. The lower side wall of claim 1 , wherein the second concave portion further comprises:a plurality of purge ...

Rotating Disk Reactor With Ferrofluid Seal For Chemical Vapor Deposition

A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shall so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.

SUSCEPTOR AND EPITAXIAL GROWTH DEVICE

Provided is a susceptor, capable of preventing occurrence of scratches on the back surface of a wafer attributable to lift pins, and reducing unevenness of the in-surface temperature distribution of the wafer. A susceptor according to one embodiment of this disclosure has a susceptor main body and a plate-shaped member, and when a wafer is conveyed, the front surface of the plate-shaped member ascended by lift pins supports the central part of the back surface of the wafer by surface contact. A separation space between the plate-shaped member and the susceptor main body, in a state in which the plate-shaped member is placed on the recessed part, enters further into the central side of the plate-shaped member, in a direction from the front surface to the back surface of the susceptor. 1. A susceptor for placing a wafer thereon within an epitaxial growth device , whereina counterbore part for placing the wafer thereon is formed on a front surface of the susceptor,the susceptor has a susceptor main body, and a plate-shaped member placed on a recessed part provided in a central part of a front surface of the susceptor main body,a bottom surface of the counterbore part is constituted of a front surface of the plate-shaped member, and a part of the front surface of the susceptor main body, located around the recessed part,the susceptor main body is provided with penetration holes, for lift pins that support a back surface of the plate-shaped member, and ascend and descend the plate-shaped member, to be inserted therethrough,when the wafer is being placed on the counterbore part and when the wafer is carried out of the counterbore part, the front surface of the plate-shaped member ascended by the lift pins acts as a supporting surface for supporting at least a central part of a back surface of the wafer by surface contact, anda separation space between the plate-shaped member and the susceptor main body, in a state in which the plate-shaped member is placed on the recessed ...

Method for Producing Group III Nitride Laminate

A method for producing a group III nitride laminate by growing a layer containing a group III nitride single crystal represented by AlInGaN, where X, Y, and Z in the composition formula satisfy relation of X+Y+Z=1.0, 0.8≤X<1.0, 0.0≤Y<0.2, and 0.0 Подробнее

EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR

Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. The cleaning chamber is performed in a batch type with respect to the plurality of substrates. 1. A method for manufacturing a semiconductor , the method comprising:transferring a plurality of substrates stayed within a loadlock chamber to a cleaning chamber of a batch type using a substrate handler installed in a transfer chamber in a vacuum state;cleaning a plurality of substrates in the cleaning chamber;transferring a plurality of substrates cleaned in the cleaning chamber to a buffer chamber using the substrate handler in a vacuum state to be stacked and stayed in a first storage space of a first substrate holder installed in the buffer chamber;transferring a plurality of substrates stayed in the first storage space to an epitaxial chamber using the substrate handler in a vacuum state;forming an epitaxial layer on each of the substrates in the epitaxial chamber;transferring a plurality of substrates having the epitaxial layer to a buffer chamber using the substrate handler in a vacuum state to be stacked and stayed in a second storage space of the first substrate holder, the first and the second storage spaces being separated from each other; andtransferring a plurality of substrates stayed in the second storage space to the loadlock chamber in a vacuum state,wherein the loadlock chamber, the cleaning chamber, the buffer chamber, and the epitaxial chamber are connected to sides ...

Epitaxial wafer manufacturing device and manufacturing method

Provided is an epitaxial wafer manufacturing device ( 1 ) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield ( 12 ), arranged in close proximity to the lower surface of a top plate ( 3 ) so as to prevent deposits from being deposited on the lower surface of the top plate ( 3 ), is removably attached inside the chamber, has an opening ( 13 ) in the central portion thereof that forces a gas inlet ( 9 ) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates ( 16 ), ( 17 ) and ( 18 ) around the opening ( 13 ).

Graphite Wafer Carrier for LED Epitaxial Wafer Processes

A graphite wafer carrier for LED epitaxial wafer processes, having a plurality of wafer pocket profiles above the carrier for carrying the epitaxial wafer substrate. The inner edge of the wafer pocket profile is a concave step with a plurality of inward-extended support portions; and also has a graphite wafer carrier edge and an axle hole at the center of the graphite wafer carrier. The pocket profiles of different quantities and sizes can be arranged on the basis of different process parameters. The disclosed structure can reduce or eliminate airflow interference and improve the wafer edge yield.

Gas flow guiding device for semiconductor processing apparatus and method of using the same

A semiconductor processing apparatus is disclosed, which comprises a chamber body having an interior volume, a substrate support pedestal disposed in the interior volume, a gas outlet member positioned above the substrate support pedestal inside the interior volume, having a plurality of dispense nozzles, and a gas guiding device positioned between the gas outlet member and the substrate support pedestal. The gas guiding device includes a plurality of petal elements pivotally arranged around the dispense nozzles of the gas outlet member and circumferentially overlapping one another, configured to dynamically adjust an output gas distribution over the substrate support pedestal.

PURGED VIEWPORT FOR QUARTZ DOME IN EPITAXY REACTOR

Embodiments described herein generally relate to an in-situ metrology system that can constantly provide an uninterrupted optical access to a substrate disposed within a process chamber. In one embodiment, a metrology system for a substrate processing chamber is provided. The metrology system includes a sensor view pipe coupling to a quartz dome of a substrate processing chamber, a flange extending radially from an outer surface of the sensor view pipe, and a viewport window disposed on the flange, the viewport window having spectral ranges chosen for an optical sensor that is disposed on or adjacent to the viewport window. 1. An metrology system , comprising:a sensor view pipe coupling to a quartz dome of a substrate processing chamber;a flange extending radially from an outer surface of the sensor view pipe; anda viewport window disposed on the flange, the viewport window having spectral ranges chosen for an optical sensor that is disposed on or adjacent to the viewport window.2. The metrology system of claim 1 , wherein the sensor view pipe has a first end coupling to an opening formed through the quartz dome.3. The metrology system of claim 1 , wherein the flange and the viewport window are secured by a clamp claim 1 , and the clamp comprises two semicircular rings that can be hinged together.4. The metrology system of claim 1 , wherein a longitudinal axis of the flange is at an angle of about 91° to about 100° with respect to a longitudinal axis of the sensor view pipe.5. The metrology system of claim 1 , wherein the sensor view pipe has a first inner diameter and a second inner diameter larger than the first inner diameter claim 1 , and the second inner diameter is disposed further away from the flange than the first inner diameter.6. An apparatus claim 1 , comprising:a quartz chamber defining a process volume therein;a substrate support disposed within the process volume; anda sensor view pipe extending between the quartz chamber and an optical sensor.7. The ...

Process and Apparatus for Diamond Synthesis

The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors. 140-. (canceled)41. A microwave cavity plasma reactor (MCPR) for growing diamond , the reactor comprising: (i) the one or more sidewalls and the base surface define a cavity in the substrate holder, the cavity having a depth in the longitudinal axis direction extending between the base surface and the top surface,', '(ii) the cavity comprises a first recess in a lower portion of the cavity and a second recess in an upper portion of the cavity,', '(iii) the first recess is adjacent the base surface, and', '(iv) the second recess is directly above the first recess and extends a predetermined distance above the first recess to define a growth volume space in the cavity;, '(a) a substrate holder for holding a growth substrate and growing diamond, the substrate holder comprising a bottom surface, a top surface opposing the bottom surface in a longitudinal axis direction defined by the substrate holder, a base surface between the top surface and bottom surface, and one or more sidewalls extending between the base surface and the top surface, wherein(b) a reactor chamber enclosing the substrate holder, the reactor chamber being coupled to a microwave delivery means and a fluid inlet stream for generating a plasma in the reactor chamber;(c) a quartz dome enclosing the substrate holder, the quartz dome being positioned for facilitating formation of a plasma discharge over a substrate when the substrate is ...

SUSCEPTOR SUPPORT PORTION AND EPITAXIAL GROWTH APPARATUS INCLUDING SUSCEPTOR SUPPORT PORTION

A susceptor support portion of the present invention includes a susceptor shaft and a substrate lift portion. The susceptor shaft includes a support column and a plurality of arms that extend radially from the support column, the substrate lift portion includes a support column and a plurality of arms that extend radially from the support column, the arm of the susceptor shaft includes a first arm, a second arm coupled to the first arm, and a third arm coupled to the second arm, from the support column side of the susceptor shaft, the second arm being provided with a through hole which passes through the second arm in a vertical direction, and a width of the first arm of the susceptor shaft is smaller than a width of the second arm of the susceptor shaft. 19-. (canceled)10. A substrate support assembly comprisinga susceptor having one or more susceptor through holes formed therethrough; a shaft first arm coupled with the support column;', 'a second shaft arm coupled with the first shaft arm, the second shaft arm having an arm through hole, a width of the first shaft arm being smaller than a width of the second shaft arm; and', 'a third shaft arm coupled with the second shaft arm, the third shaft arm being in connection with the susceptor;, 'a susceptor shaft supporting the susceptor, wherein the susceptor shaft includes a susceptor shaft support column and a plurality of shaft arms that extend radially from the susceptor shaft support column, the plurality of shaft arms each having a lift portion support column; and', a first lift arm coupled with the lift portion support column;', 'a second lift arm coupled to the first lift arm; and', 'a pedestal portion coupled to the second lift arm; and, 'a plurality of lift arms coupled with the lift portion support column, each of the lift arms comprising], 'a substrate lift portion comprisinga lift pin positioned in connection with each of the pedestal portions and oriented to pass through the arm through hole and the ...

DEPOSITION SYSTEMS HAVING DEPOSITION CHAMBERS CONFIGURED FOR IN-SITU METROLOGY WITH RADIATION DEFLECTION AND RELATED METHODS

Deposition chambers () for use with deposition systems () include a chamber wall () comprising a transparent material. The chamber wall may include an outer metrology window () surface extending from and at least partially circumscribed by an outer major surface of the wall, and an inner metrology window surface extending from and at least partially circumscribed by an inner major surface of the wall. The window surfaces may be oriented at angles to the major surfaces. Deposition systems include such chambers. Methods include the formation of such deposition chambers. The depositions systems and chambers may be used to perform in-situ metrology. 1. A deposition chamber for a deposition system , comprising: an outer major surface;', 'an inner major surface oriented at least substantially parallel to the outer major surface;', 'an outer window surface extending from and at least partially circumscribed by the outer major surface, the outer window surface oriented at an angle to the outer major surface; and', 'an inner window surface extending from and at least partially circumscribed by the inner major surface, the inner window surface oriented at an angle to the inner major surface, at least a portion of the inner window surface aligned with at least a portion of the outer window surface along an axis perpendicular to the outer major surface and the inner major surface., 'at least one chamber wall including a transparent material at least substantially transparent to electromagnetic radiation over at least a range of wavelengths, the at least one chamber wall comprising2. The deposition chamber of claim 1 , wherein the outer major surface and the inner major surface are at least substantially planar.3. The deposition chamber of claim 2 , wherein the outer window surface and the inner window surface are at least substantially planar.4. The deposition chamber of claim 3 , wherein the outer window surface and the inner window surface are oriented parallel to one another ...

Apparatus and Method for Delivering a Gaseous Precursor to a Reaction Chamber

The disclosure relates to an apparatus and method for delivering a precursor to a reaction chamber. One example embodiment is an apparatus for delivering a precursor to a reaction chamber. The apparatus includes a recipient configured to hold a quantity of the precursor in a solid or liquid state at a given temperature and pressure so as to vaporize the precursor. The apparatus also includes a carrier gas supply line, configured to supply a carrier gas to the recipient. Further, the apparatus includes a gas mixture transport line configured to transport a mixture of the carrier gas and a vapor of the precursor out of the recipient. The glass mixture transport line extends between the recipient and an outlet section of the gas mixture transport line. 1. An apparatus for delivering a precursor to a reaction chamber , the apparatus comprising:a recipient configured to hold a quantity of the precursor in a solid or liquid state at a given temperature and pressure so as to vaporize the precursor;a carrier gas supply line, configured to supply a carrier gas to the recipient; anda gas mixture transport line configured to transport a mixture of the carrier gas and a vapor of the precursor out of the recipient,wherein the gas mixture transport line extends between the recipient and an outlet section of the gas mixture transport line,wherein the outlet section is configured to be coupled to a supply line, external to the apparatus, configured to supply the mixture to the reaction chamber,wherein the recipient and the gas mixture transport line are configured to be maintained at a predefined temperature, andwherein the gas mixture transport line comprises a pressure control device configured to maintain the pressure upstream of the pressure control device at a predefined level.2. The apparatus according to claim 1 ,{'sub': 4', '5, 'wherein the precursor is HfClor MoCl, and'}{'sub': '2', 'wherein the carrier gas is Ar, He, or H.'}3. The apparatus according to claim 1 , wherein ...

Susceptor with asymmetric recesses, reactor for epitaxial deposition and production method

This disclosure concerns a susceptor for a reactor for epitaxial deposition comprising a body having the shape of a horizontal disc; the body has a first upper face, a second lower face and a vertical symmetry axis of the body; the first face has a plurality of disc-shaped recesses each of which with a centroid and with a symmetry axis of the recess which passes through said centroid; a section of each of said recesses taken along any vertical plane which comprises said vertical symmetry axis of the body is asymmetric with respect to any axis; a section of each of said recesses taken along any vertical plane which is parallel to said vertical symmetry axis of the body and which is perpendicular to a radius of the body passing through the centroid of the recess is symmetric with respect to a vertical axis.

SYSTEMS AND METHODS FOR ATOMIC LAYER DEPOSITION

An atomic layer deposition (ALD) method can include pulsing a first reactant vapor into a reactor assembly. The first reactant vapor is supplied to a first reactant gas line. An inactive gas is supplied to a first inactive gas line at a first flow rate. The first reactant vapor and the inactive gas are fed to the reactor assembly by way of a first feed line. The reactor assembly is purged by supplying the inactive gas to the first inactive gas line at a second flow rate higher than the first flow rate. A first portion of the inactive gas can be fed back along a diffusion barrier portion of the first reactant gas line to provide an inert gas valve (IGV) upstream of the first inactive gas line. A second portion of the inactive gas can be fed to the reactor assembly by way of the first feed line. 1. An atomic layer deposition (ALD) method comprising: supplying the first reactant vapor to a first reactant gas line;', 'supplying an inactive gas to a first inactive gas line at a first flow rate; and', 'feeding the first reactant vapor and the inactive gas to the reactor assembly by way of a first feed line; and, 'pulsing a first reactant vapor into a reactor assembly, the pulsing comprising supplying the inactive gas to the first inactive gas line at a second flow rate that is higher than the first flow rate;', 'feeding a first portion of the inactive gas back along a diffusion barrier portion of the first reactant gas line to provide an inert gas valve (IGV) upstream of the first inactive gas line; and', 'feeding a second portion of the inactive gas to the reactor assembly by way of the first feed line., 'purging the reactor assembly, the purging comprising2. The ALD method of claim 1 , further comprising applying suction to the first inactive gas line and to the first reactant line by way of a bypass line connected to a vacuum source.3. The ALD method of claim 2 , further comprising claim 2 , during the pulsing claim 2 , suctioning the inactive gas from the first ...

Multizone control of lamps in a conical lamphead using pyrometers

A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

MULTIZONE CONTROL OF LAMPS IN A CONICAL LAMPHEAD USING PYROMETERS

A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors. 1. A substrate processing apparatus , comprising:a vacuum chamber comprising a transparent dome and a transparent floor;a substrate support disposed inside the vacuum chamber;a plurality of thermal lamps arranged in a lamphead and positioned proximate the transparent floor of the vacuum chamber;a plurality of thermal sensors disposed within the lamphead and oriented to receive thermal radiation from an area proximate the substrate support;a plurality of power supplies coupled to the thermal lamps in relation to the position of the thermal sensors; anda controller that adjusts the power supplies based on input from the thermal sensors.2. The substrate processing apparatus of claim 1 , wherein the thermal sensors receive thermal radiation through the transparent floor.3. The substrate processing apparatus of claim 2 , wherein the substrate support is a platter-like member with low thermal mass claim 2 , and the thermal sensors receive thermal radiation emitted by the substrate and transmitted by the substrate support.4. The substrate processing apparatus of claim 3 , further comprising a reflector disposed proximate the transparent dome claim 3 , the reflector and the transparent dome together defining a thermal control space.5. The substrate processing apparatus of claim 4 , further comprising an inlet for a thermal control fluid disposed through the reflector in fluid communication ...

SUSCEPTOR, EPITAXIAL GROWTH DEVICE, AND EPITAXIAL WAFER

Provided is a susceptor, capable of preventing occurrence of deep scratches on the back surface and beveled part of a wafer attributable to contact with lift pins or the susceptor, and reducing dust generation from the susceptor. A susceptor according to one embodiment of this disclosure includes a susceptor main body, and arc-shaped members. The bottom surface of a counterbore part is constituted of the entire front surfaces of the arc-shaped susceptor members, and a part of the front surface of the susceptor main body. When a wafer is conveyed, the entire front surfaces of the arc-shaped members ascended by lift pins support only the outer circumferential part of the back surface of the wafer by surface contact. 1. A susceptor for placing a wafer thereon within an epitaxial growth device , whereina counterbore part for placing the wafer thereon is formed on a front surface of the susceptor,the susceptor has a susceptor main body, and two or more arc-shaped members placed on two or more recessed parts provided in an outer circumferential part of a front surface of the susceptor main body,a bottom surface of the counterbore part is constituted of entire front surfaces of the arc-shaped members, and a part of the front surface of the susceptor main body,the susceptor main body is provided with two or more penetration holes, for lift pins that support a back surface of the two or more arc-shaped members, and ascend and descend the two or more arc-shaped members, to be inserted therethrough, andwhen the wafer is being placed on the counterbore part and when the wafer is carried out of the counterbore part, the entire front surfaces of the arc-shaped members ascended by the lift pins act as a supporting surface for supporting only an outer circumferential part of a back surface of the wafer by surface contact.2. The susceptor according to claim 1 , the number of the arc-shaped members is two claim 1 , located in substantially line symmetry from a front view.3. The ...

EPITAXIAL REACTOR

An embodiment comprises: a reaction chamber; a susceptor positioned in the reaction chamber such that a wafer is seated thereon; and a gas flow controller for controlling the flow of gas flowing into the reaction chamber, wherein the gas flow controller comprises an inject cap having a plurality of outlets for separating the flow of gas, an inject buffer comprising first through-holes corresponding to the plurality of outlets, respectively, the first through-holes allowing passage of gas discharged from the plurality of outlets, and a baffle comprising second through-holes corresponding to the first through-holes, respectively, the second through-holes allowing passage of gas that has passed through the first through-holes, and the area of each of the first through-holes is larger than the area of each of the second through-holes and smaller than the area of each of the outlets. 1. An epitaxial reactor comprising:a reaction chamber;a susceptor located in the reaction chamber such that a wafer is seated thereon; anda gas flow controller for controlling a flow of gas introduced into the reaction chamber,wherein the gas flow controller comprises:an inject cap having a plurality of outlets for separating the flow of gas;an inject buffer having first through-holes corresponding to the respective outlets so that the gas discharged from the outlets passes through the first through-holes; anda baffle having second through-holes corresponding to the respective first through-holes so that the gas passing through the first through-holes passes through the second through-holes, andwherein each of the first through-holes has an area greater than that of each of the second through-holes and smaller than that of each of the outlets.2. The epitaxial reactor according to claim 1 , further comprising:an insert comprising a plurality of sections isolated from each other so that the gas passing through the second through-holes passes through the sections,wherein each of the first ...

MOCVD APPARATUS

A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member. 1. A metal-organic chemical vapor deposition (MOCVD) apparatus comprising:a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness;a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers;a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; anda gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.2. The MOCVD apparatus of claim 1 , wherein the cover member has a shape corresponding to the susceptor and has a central hole allowing the gas supply unit disposed at the center of the chamber cover to be coupled therethrough.3. The MOCVD apparatus of claim 1 , wherein the cover member has a structure in which a central region thereof is spaced apart from the chamber cover by a certain interval and the interval between the cover member and the ...

ALKYL PUSH FLOW FOR VERTICAL FLOW ROTATING DISK REACTORS

In a rotating disk reactor () for growing epitaxial layers on substrate (), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis () may include a higher concentration of a reactant gas () than the gas directed toward portions of the disk close to the axis (), so that portions of the substrate surfaces at different distances from the axis () receive substantially the same amount of reactant gas () per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate. 1. A reactor for treating a substrate comprising:a reaction chamber;a substrate carrier mounted within said reaction chamber, whereby at least one substrate can be mounted on said substrate carrier, said substrate carrier having a treatment surface incorporating a plurality of zones of unequal area;a plurality of gas inlets connected to said reaction chamber;one or more reactant gas sources of a reactant gas connected to said gas inlets; andone or more carrier gas sources of a carrier gas connected to at least one of said gas inlets;wherein said reactant gas sources, said carrier gas sources, and said gas inlets are constructed and arranged so that each of said gas inlets directs a gas stream into said reaction chamber toward said substrate carrier with each said gas stream associated with and impinging on a different one of said zones of said treatment surface, said gas streams having different concentrations of said reactant gas and different mass flow rates of said reactant gas but having substantially the same velocity, the mass flow rate of the reactant gas in each gas stream being proportional to an area of the associated zone of said treatment surface.2. A reactor as claimed in claim 1 , wherein said substrate carrier is mounted for rotation about an axis claim 1 ...

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM

Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10cmand an inclusion density below 10cmand/or a MV density below 10cm. 138.-. (canceled)39. A method of growing single-crystal AlN , the method comprising:{'sub': '2', 'providing in a crystal growth enclosure a vapor comprising Al and N;'}depositing the vapor as single-crystalline AlN; andfollowing deposition, annealing at least a portion of the single-crystalline AlN at a first temperature and a first pressure,wherein the first temperature is selected from the range of approximately 1000° C. to approximately 2350° C.40. The method of claim 39 , wherein the first temperature is no less than approximately 2000° C.41. The method of claim 39 , wherein depositing the vapor as single-crystalline AlN comprises pushing the crystal growth enclosure at a push rate less than an intrinsic growth rate of the single-crystalline AlN.42. The method of claim 41 , wherein the push rate less is less than approximately 2 mm/hr.43. The method of claim 39 , wherein the first pressure is selected from the range of 1 bar to 50 bar.44. The method of claim 39 , wherein the first pressure is at least approximately 35 bar.45. The method of claim 39 , wherein the at least a portion of the single-crystalline AlN has at least one of (i) an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3 claim 39 ,000 nm or (ii) an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 39 ,500 nm.46. The method of claim 39 , wherein the single-crystalline AlN has a ...

Apparatus for self-centering pre-heat ring

Embodiments described herein generally relate to an apparatus for aligning a preheat member. In one embodiment, an alignment assembly is provided for a processing chamber. The alignment assembly includes a lower liner, a preheat member; an alignment mechanism formed on a bottom surface of the preheat member; and an elongated groove formed in a top surface of the lower liner and configured to engage with the alignment mechanism.

Linear Cluster Deposition System

A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers. 134-. (canceled)35. A method of simultaneously depositing material in a plurality of reaction chambers , the method comprising:a) providing a plurality of reaction chambers and positioning each of the plurality of reaction chamber in a linear horizontal arrangement;b) positioning a heating filament in each of the plurality of reaction chambers so as to match a thermal profile in at least two of the plurality of reaction chambers during operation to achieve at least one deposited film parameter that is substantially the same in each of the plurality of reaction chambers;c) positioning a spindle attached to a platen that supports a substrate carrier so as to match reactant and carrier gas flow patterns in each of the plurality of reaction chambers during operation to achieve at least one deposited film parameter that is substantially the same in at least two of the plurality of reaction chambers;d) flowing reactant gas from at least two common reactant gas manifolds into each of a plurality of reactant gas injector nozzles that inject the reactant gas into each of the plurality of the reaction chambers using at ...

VAPOR PHASE EPITAXY METHOD

A vapor phase epitaxy method including: providing a III-V substrate of a first conductivity type, introducing the III-V substrate into a reaction chamber of a vapor phase epitaxy system at a loading temperature, heating the III-V substrate from the loading temperature to an epitaxy temperature while introducing an initial gas flow, depositing a III-V layer with a dopant concentration of a dopant of the first conductivity type on a surface of the III-V substrate from the vapor phase from an epitaxial gas flow, fed into the reaction chamber and comprising the carrier gas, the first precursor, and at least one second precursor for an element of main group III, wherein during the heating from the loading temperature to the epitaxy temperature, a third precursor for a dopant of the first conductivity type is added to the initial gas flow. 1. A vapor phase epitaxy method comprising:providing a III-V substrate of a first conductivity type;introducing the III-V substrate into a reaction chamber of a vapor phase epitaxy system at a loading temperature;heating the III-V substrate from the loading temperature to an epitaxy temperature while introducing an initial gas flow comprising a carrier gas and a first precursor for a first element from main group V;depositing a III-V layer with a dopant concentration of a dopant of the first conductivity type on a surface of the III-V substrate from the vapor phase from an epitaxial gas flow, fed into the reaction chamber and comprising the carrier gas, the first precursor, and at least one second precursor for an element of main group III; andadding, during the heating from the loading temperature to the epitaxy temperature, a third precursor for a dopant of the first conductivity type to the initial gas flow.2. The vapor phase epitaxy method according to claim 1 , wherein the addition of the third precursor begins during the heating below a temperature of 500° C. or below a temperature of 400° C. or below a temperature of 300° C.3. ...

LINEAR LAMP ARRAY FOR IMPROVED THERMAL UNIFORMITY AND PROFILE CONTROL

Methods and apparatus for an upper reflector assembly for use in a process chamber are provided herein. In some embodiments, an upper reflector assembly for use in a process chamber includes a reflector mounting ring; and upper reflector plate coupled to the reflector mounting ring and having an upper surface and lower surface, wherein the lower surface includes a plurality of linear channels extending substantially parallel to each other across the lower surface, and wherein the upper reflector plate includes air cooling slots extending from the upper surface to the lower surface. 1. An upper reflector assembly for use in a process chamber , comprising: an upper surface;', 'a lower surface;', 'a plurality of linear channels extending substantially parallel to each other across the lower surface; and', 'a plurality of air cooling slots extending from the upper surface to the lower surface, the plurality of air cooling slots comprising a plurality of first slots and a plurality of second slots, the plurality of first slots having a smaller depth than the plurality of second slots., 'an upper reflector plate comprising2. The upper reflector assembly of claim 1 , wherein the plurality of second slots extend orthogonal to the upper surface.3. The upper reflector assembly of claim 1 , wherein the plurality of first slots extend at an angle less than 90 degrees with respect to the upper surface of the upper reflector plate.4. The upper reflector assembly of claim 1 , wherein the upper surface includes a plurality of coolant channels.5. The upper reflector assembly of claim 1 , wherein the plurality of linear channels have different cross-sectional shapes.6. The upper reflector assembly of claim 1 , wherein the plurality of linear channels have at least one of a U-shaped cross section claim 1 , a V-shaped cross section claim 1 , an elliptical cross section claim 1 , a parabolic cross section claim 1 , or a rectangular cross section.7. The upper reflector assembly of claim ...

SELECTIVE EPITAXIAL GROWTH METHOD AND FILM FORMING APPARATUS

A selective epitaxial growth method includes preparing a target object including a single crystal substrate in which an epitaxial growth region is partitioned by a suppression film; and growing the epitaxial layer on the epitaxial growth region of the target object until a predetermined film thickness is obtained. The growing the epitaxial layer includes first source gas supply process of supplying a source gas onto the target object under a first pressure to grow a first epitaxial layer on the epitaxial growth region, first removing process of removing deposits on the suppression film, second source gas supply process of supplying the source gas onto the target object under a second pressure higher than the first pressure, and second removing process of removing the deposits on the suppression film. The second source gas supply process and the second removing process are repeated until the predetermined film thickness is obtained.

GAS-SUPPLY SYSTEM AND METHOD

A gas-supply system includes a gas container filled with gas, a gas flow controller coupled to the gas container via a first tube, and an operation device electrically connected to the gas flow controller. The gas-supply system further includes a pressure transducer installed on a second tube connected to the gas flow controller and configured to generate a pressure signal to the operation device according to the pressure of the gas in the second tube. The operation device is configured to generate a control signal to the gas flow controller according the pressure signal, and the gas flow controller is configured to adjust the flow rate of the gas in the second tube according to the control signal. 1. A gas-supply system , comprising:a gas container filled with gas;a gas flow controller coupled to the gas container via a first tube;an operation device electrically connected to the gas flow controller;a pressure transducer, installed on a second tube connected to the gas flow controller, configured to generate a pressure signal to the operation device according to the pressure of the gas in the second tube,wherein the operation device is configured to generate a control signal to the gas flow controller according to the pressure signal, and the gas flow controller is configured to adjust a flow rate of the gas in the second tube according to the control signal.2. The gas-supply system as claimed in claim 1 , wherein a semiconductor apparatus is coupled to the gas flow controller via the second tube and is configured to receive the gas from the second tube.3. The gas-supply system as claimed in claim 1 , wherein the gas flow controller comprises:a housing disposed on the second tube; anda valve mechanism, disposed in the housing,wherein a position of the valve mechanism in the second tube is adjusted according to the control signal, and the flow rate of the gas is adjusted according to the position of the valve mechanism in the second tube.4. The gas-supply system as ...

Degassing chamber for arsenic related processes

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

EPITAXIAL GROWTH APPARATUS

Disclosed herein is an epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer. The apparatus includes: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer. The additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member. 1. An epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer , the apparatus comprising:a chamber in which the wafer is housed;an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber;a lower lamp group that includes a plurality of heating lamps provided below the chamber;a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; andan additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer,wherein the additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member.2. The epitaxial growth apparatus as claimed in claim 1 , wherein the additional reflection member includes:a circular plate portion that constitutes the reflection surface; anda sidewall portion that is provided in such a way as to encircle an outer periphery of the circular plate portion.3. The ...

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

A manufacturing method allows growth of a group III nitride semiconductor layer on a Si substrate with an AlN buffer layer interposed between same, so as to suppress group III material from diffusing into the Si substrate. The group III nitride semiconductor substrate manufacturing method includes: a step of forming an AlN coating on the inside of a furnace; steps of installing an Si substrate in the furnace covered with the AlN coating and forming an AlN buffer layer on the Si substrate; and a step of forming a group III nitride semiconductor layer on the AN buffer layer. 1. A group III nitride semiconductor substrate manufacturing method comprising:forming an AlN coating inside a furnace;installing an Si substrate in the furnace whose inside is covered with the AlN coating and forming an AlN buffer layer on the Si substrate; andforming a group III nitride semiconductor layer on the AlN buffer layer.2. The group III nitride semiconductor substrate manufacturing method according to claim 1 , whereinthe formation temperature of the AlN coating is 1000° C. to 1400° C.3. The group III nitride semiconductor substrate manufacturing method according to claim 1 , wherein formation time of the AlN coating is 1 min to 30 min.4. The group III nitride semiconductor substrate manufacturing method according to claim 1 , wherein the step of forming the AlN coating introduces an Al raw material and an N raw material alternately and repeatedly into the furnace.5. The group III nitride semiconductor substrate manufacturing method according to claim 4 , wherein a per unit time for instruction of each of the Al raw material and the N raw material is 0.5 sec to 10 sec.6. The group III nitride semiconductor substrate manufacturing method according to claim 4 , wherein the number of repetitions is 5 to 200.7. The group III nitride semiconductor substrate manufacturing method according to further comprising cleaning the inside of the furnace under a hydrogen-containing atmosphere before ...

Multizone control of lamps in a conical lamphead using pyrometers

A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber.

METHOD FOR MANUFACTURING SiC WAFER FIT FOR INTEGRATION WITH POWER DEVICE MANUFACTURING TECHNOLOGY

A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate. 1. A method for manufacturing SiC crystal to a grown volume , comprising:i. introducing a mixture comprising silicon chips into a reaction cell, the reaction cell being made of graphite and having cylindrical interior of internal volume in the range of from six to twelve times the grown volume of the SiC crystal;ii. placing a silicon carbide seed crystal inside the reaction cell adjacent to a lid of the reaction cell;iii. sealing the cylindrical reaction cell using the lid;iv. surrounding the reaction cell with graphite insulation;v. introducing the cylindrical reaction cell into a vacuum furnace;vi. evacuating the vacuum furnace;vii. filling the vacuum furnace with a gas mixture comprising inert gas to a pressure near atmospheric pressure;viii. heating the cylindrical reaction cell in the vacuum furnace to a temperature in the range from 1975° C. to 2500° C.;ix. reducing the pressure in the vacuum furnace to from 0.05 torr to less than 50 torr;{'sup': 2', '2, 'x. flowing nitrogen gas configured to introduce nitrogen donor concentration larger than 3E18/cm, and up to 6E18/cm; and,'}xi. allowing for sublimation of silicon and carbon species and condensation of vapors on the seed and stopping the ...

METHODS FOR FORMING LARGE AREA DIAMOND SUBSTRATES

The disclosure relates to large area single crystal diamond (SCD) surfaces and substrates, and their methods of formation. Typical large area substrates can be at least about 25 mm, 50 mm, or 100 mm in diameter or square edge length, and suitable thicknesses can be about 100 μm to 1000 μm. The large area substrates have a high degree of crystallographic alignment. The large area substrates can be used in a variety of electronics and/or optics applications. Methods of forming the large area substrates generally include lateral and vertical growth of SCD on spaced apart and crystallographically aligned SCD seed substrates, with the individual SCD growth layers eventually merging to form a composite SCD layer of high quality and high crystallographic alignment. A diamond substrate holder can be used to crystallographically align the SCD seed substrates and reduce the effect of thermal stress on the formed SCD layers. 1. A method for forming a large area single crystal diamond (SCD) surface , the method comprising:(a) providing a first SCD substrate having a growth surface;(b) providing a second SCD substrate having a growth surface, the second SCD substrate being spaced apart from and crystallographically aligned within 1° with the first SCD substrate;(c) depositing a first SCD layer on the first SCD growth surface and a second SCD layer on the second SCD growth surface, the layers extending both vertically and laterally relative to their respective growth surfaces; and(d) continuing deposition of the first SCD layer and the second SCD layer at least until they join together to form a composite (or single) SCD layer.2. The method of claim 1 , further comprising:(e) cutting and optionally polishing the composite SCD layer to form a large area SCD substrate therefrom.3. The method of claim 2 , wherein the large area SCD substrate has a thickness in a range of 0.1 mm to 5 mm.4. The method of claim 2 , further comprising:(f) cutting and optionally polishing the large area ...

EPITAXIAL REACTOR

An embodiment comprises a reacting chamber; a susceptor which is located in the reacting chamber and seats a wafer therein; and a gas flow controller for controlling the flow of gas introduced in the reacting chamber, wherein the gas flow controller includes an inject cap having a plurality of gas outlets for separating the flow of gas and includes a plurality of baffles having through-holes corresponding to the plurality of gas outlets, respectively, and the plurality of baffles are separated from each other, and each of the baffles is disposed adjacently to a corresponding gas outlet among the plurality of gas outlets. 1. An epitaxial reactor comprising:a reaction chamber;a susceptor located in the reaction chamber such that a wafer is seated thereon; anda gas flow controller for controlling a flow of gas introduced into the reaction chamber,wherein the gas flow controller comprises:an inject cap having a plurality of gas outlets for separating the flow of gas; anda plurality of baffles, each having through-holes corresponding to a respective one of the gas outlets, andwherein the baffles are separated from each other, and each of the baffles is disposed adjacent to a corresponding one of the gas outlets.2. The epitaxial reactor according to claim 1 , wherein:the inject cap has a guide part protruding from one surface thereof to expose the gas outlets; andthe baffles are inserted into the guide part.3. The epitaxial reactor according to claim 2 , wherein the guide part has a ring shape so as to surround the gas outlets.4. The epitaxial reactor according to claim 1 , wherein each of the baffles comprises a plate having therein the through-holes spaced apart from each other claim 1 , and a support part connected to one surface of the plate claim 1 , the support part is inserted into each of the gas outlets claim 1 , and the plate is inserted into a guide part.5. The epitaxial reactor according to claim 4 , wherein the support part comprises a plurality of legs ...

SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS

A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided. 1. A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method , the susceptor comprising:a base; andthree protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the waferwherein the base includes a circular concave part, and an annular outer part that is vertically in contact with an outer circumference of the circular concave part, andthe three protrusion parts are disposed on the annular outer part.2. The susceptor according to claim 1 , wherein a height of a first end of the three protrusion parts relative to the circular concave part is placed is 1 mm to 5 mm.3. The susceptor according to claim 1 , wherein the three protrusion parts are concentrically arranged.4. The susceptor according to claim 3 , wherein the three protrusion parts are arranged at equal intervals.5. The susceptor according to claim 1 , wherein claim 1 , when the wafer is placed claim 1 , the three protrusion parts are disposed at locations other than an orientation flat part of the wafer.6. The susceptor according to claim 1 , wherein a height of each of the three protrusion parts is 0.1 mm to 5 mm.7. The susceptor according to claim 1 , wherein a shape of the three protrusion parts is an upwardly projecting hemisphere.8. The susceptor according to claim 1 , wherein a shape of the three protrusion parts is an upwardly projecting cone.9. The susceptor according to claim 1 , further comprising a holding ring in an outer circumferential direction of the protrusion part on ...