14-01-2021 дата публикации
Номер: US20210013316A1
Принадлежит:
[Problem] To improve the drain current ON/OFF ratio characteristics. 1. A tunnel field-effect transistor comprising: a semiconductor layer formed to include a source region , a channel region arranged adjacent to the source region and whose boundary surface with the source region is set as a tunnel junction surface to cause carriers in the source region to tunnel through , and a drain region arranged adjacent to the channel region and to which the carriers are transported from the channel region; a gate part formed with a gate insulating film and a gate electrode arranged in this order on the semiconductor layer; and an insulation part arranged to cover a side face of the gate electrode , and having: a structure in which part of the source region is arranged under a bottom surface of the gate part as a surface on a side of the gate insulating film to cause the bottom surface and the part of the source region to come into contact with each other; and a drain offset structure in which a drain offset region is formed in the semiconductor layer to keep the gate electrode and the drain region away from each other , wherein{'sub': G', 'OV, 'when a gate length as a width of the gate electrode in a direction parallel to a channel direction between the source region and the drain region is denoted by L, and an extension distance of the source region extended toward the drain region in a direction parallel to the channel direction from a position in the source region opposite in a height direction of the gate electrode to a source-side reference position as a side face position of the gate electrode closest to the source region is denoted by L,'}{'sub': 'TG', 'claim-text': [{'br': None, '[Math. 1]'}, {'br': None, 'i': L', '=L', '−L, 'sub': TG', 'G', 'OV, '(1)'}, {'br': None, '[Math. 2]'}, {'br': None, 'sub': TG', 't_OFF, 'LL', '−L, 'sub': TG', 'direct', 'OFF, '(3)'}], 'Lexpressed in Formula (1) below as a ...
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