Wandlerelement zur Umwandlung von elektrischen in mechanische Schwingungen, Verfahren zu seiner Herstellung und seine Verwendung in einer mechanischen Verzoegerungsleitung

PIEZOELEKTRISCHER RESONATOR

PIEZOELEKTRISCHER SCHWINGER

Piezoelektrischer Sattelschwinger

ELEKTROMECHANISCHES FILTER

Piezoelectric crystal impedance element

... 530,957. Piezo-electric crystals ; impedance networks. STANDARD TELEPHONES & CABLES, Ltd. July 7, 1939, No. 19842. Convention date, Sept. 3, 1938. [Classes 40 (iii) and 40 (v)] The impedance of a piezo-electric crystal is increased by subdividing the electrodes and interconnecting the divisions in such a way that different parts of the crystal are connected in series or series-parallel combinations. Fig. 5 shows an arrangement in which each electrode is divided into three parts A, B, C, A1, B1, C1, the parts AA1 and CC1 being series-connected in parallel into part BB1 relative to terminals 4, 5. The actual layout of the electrodes is shown in Fig. 8 which is a developed view in which 8, 9 are the centre lines of the upper and lower faces of the crystal and 10, 11, 12 and 13 are the edges. Electrodes A and B are combined to form electrode D while B1 and C1 are combined to form electrode E. Electrodes C and A1 Подробнее

Film acoustically-coupled transformer with increased common mode rejection

The film acoustically-coupled transformer (FACT) (200) has a first (106) and second (108) decoupled stacked bulk acoustic resonators (DSBARs). Each DSBAR has a lower film bulk acoustic resonator (FBAR) (110), an upper FBAR (120) atop the lower FBAR, and an acoustic decoupler (130) between them FBARs. Each FBAR has opposed planar electrodes (112, 114) and a piezoelectric element (116) between the electrodes. A first electrical circuit (141) interconnects the lower FBAR (110, 150) of the first DSBAR and the second DSBAR. A second electrical circuit (142) interconnects the upper FBARs (120, 160) of the first DSBAR and the second DSBAR. That least one of the DSBARs, the acoustic decoupler and one electrode of the each of the lower FBAR and the upper FBAR adjacent the acoustic decoupler constitute a parasitic capacitor (Cp). The FACT additionally has an inductor (180) electrically connected in parallel with the parasitic capacitor. The inductor increases the common-mode rejection ratio of the ...

Piezoelectric unit and device

A piezoelectric device comprising a casing and a piezoelectric unit 9, 10 supported in the casing, preferably with the use of a direction- oriented electroconductive pliable sheet 13, 14. The piezoelectric unit has a plate shape with electrodes laminated on its opposite surfaces. The electrode provided on one surface of the piezoelectric unit extends on to a peripheral portion of the opposite surface, spaced from the electrode(s) thereon, for gathering all the electrode connections on the opposite surface. Support members, which may be conductive, or non-conductive with electrodes thereon, connect the piezoelectric unit electrodes to external terminal legs. ...

PIEZO-ELECTRIC RESONATOR

QUARTZ RESONATORS

QUARTZ OSCILLATOR

TUNING FORK TYPE PIEZO-ELECTRIC VIBRATOR

METHOD OF MAKING A PIEZO ELECTRIC VIBRATOR

Torsional delay line transducer

... 1,011,487. Electromechanical delay lines. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 6, 1963 [May 7, 1962], No. 17738/63. Heading H3U. A transducer for a torsional-mode electromechanical delay line 15 comprises a pair of magnetostrictive strips 11, 13 which undergo longitudinal stresses of opposite sign upon application of a signal pulse to winding 19 whereby a twisting force is applied to the line 15. The strips 11, 13 are biased in opposite directions by a magnetic field which extends around a closed circuit of entirely magnetic material. As shown, the field is provided by magnets 23, 25. In a modification, a single magnet is provided and the delay line provides the return magnetic path. In another modification, the strips are permanently magnetized and are joined together at their ends remote from the delay line. The field causes either an expansion or a contraction of both strips. The signal field, which is in the same direction in the two strips, increases the contraction or ...

SURFACE ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING SAME

... 1500373 Blasting THOMSON-CSF 12 Feb 1975 [15 Feb 1974] 6058/75 Heading B3D [Also in Division H3] To scatter unwanted bulk waves in a surface wave device, zones 22, 23, opposite transducers 18, 19, are blasted by a jet 26 of abrasive particles, e.g. a gas flow entraining particles of sand. The grain size is preferably close to the wavelength of the unwanted bulk waves. A blasted zone (28, Fig. 3, not shown) may be provided opposite a coupler 10, and face 3 may have a blasted zone (29) in the form of a longitudinal band separating the transducers.

Acoustic wave device with multi-layer piezoelectric substrate

CONTROL FOR A MACHINE TO THE PRODUCTION OF PAPER PADDING

KRISTALLRESONATOR

Electromechanical filter

PIEZOELECTRIC RESONATOR

MACHINE TO THE PRODUCTION OF WINDINGS FROM PAD-WELL-BEHAVED PACKING MATERIAL

SURFACE ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING SAME

PIEZOELECTRIC RESONATOR

PIEZO-ELECTRIC RESONATOR

The resonator according to the invention comprises at least one quartz crystal in the form of a rectangular thin plate, of which the length 1 is directed along an axis X', the width w along an axis Y' and the thickness t along an axis Z', and which vibrates in a contour mode. The axis Z' is situated in the plane of the electrical axis X and optical axis Z of the crystal and forms with the axis Z an angle ? such that 16.degree. < ? < 36.degree. and the axis Y' forms with the mechanical axis Y of the crystal an angle 6 such that 10.degree. < .theta. < 30.degree. This resonator presents a zero temperature coefficient of the first order and is not dependent to any critical extent on the dimensional ratio between the sides w and 1 of the plate ; The temperature coefficients of higher order are very small. The piezo-electric coupling is such that the optimised mode of oscillation is the only one excited in practice.

TRAPPED ENERGY RESONATOR FOR OSCILLATOR AND MULTIPLE RESONATOR APPLICATIONS

A trapped energy piezoelectric resonator for oscillator and multiple resonator applications has a piezoelectric substrate with electrodes disposed on each of its major surfaces. These electrodes are further comprised of a plurality of electrically interconnected and acoustically coupled subelectrodes. The resonant frequency of these resonators may be controlled by varying the separation and, therefore, the acoustic coupling between the sub-electrodes. This resonator may be used in the feedback loop of an oscillator circuit as the frequency determining element. It may also be used to provide a resonator on a substrate carrying resonators of significantly different frequency.

Method of Operating an Ultrasonic Piezoelectric Transducer and Circuit Arrangement for Performing the Method

ACOUSTIC VIBRATOR WITH VARIABLE SENSITIVITY TO EXTERNAL ACCELERATION

RESONATEUR PIEZO-ELECTRIQUE A MODE DE VIBRATION DE CONTOUR.

ELEKTRODENANORDNUNG IN EINEM QUARZKRISTALLOSZILLATOR VOM STIMMGABELTYPUS.

MICRO-RESONATEUR PIEZO-ELECTRIQUE.

PIEZOELEKTRISCHER SCHWINGER.

PROCEDE DE FABRICATION D'UN VIBREUR PIEZO-ELECTRIQUE.

VIBREUR A DIAPASON A CRISTAL DE QUARTZ.

Piezoelektrisches Element.

Dispositif à cristal piézo-électrique.

Piezoelektrischer Schwingkristall.

Elektroakustische Verzögerungsleitung

Piezo-elektrische Kristallplatte

Biegungsschwinger aus elektrostriktivem Material

Elektromechanischer Wandler und dessen Verwendung für eine magnetostriktive Verzögerungsleitung

Ligne à retard ultrasonore

Dispositif à cristal piézoélectrique

Elektromechanisches Filter

Quartz piézoélectrique

ELEKTRODENANORDNUNG AN EINEM STABFOERMIGEN, PIEZOELEKTRISCHEN BIEGUNGSSCHWINGER.

PIEZO-ELEKTRISCHER SCHWINGER.

Verfahren zur Herstellung eines elektrische Impulse in mechanische Wellen und umgekehrt übersetzenden Wandlers

Quarzresonator

RESONATEURPIEZO - ELECTRIQUE.

MANUFACTORING PROCESS Of a PIEZOELECTRIC VIBRATOR.

QUARTZ CRYSTAL VIBRATOR

Electrode arrangement in a crystal oscillator of the tuning-fork type.

PIEZOELECTRIC OSCILLATOR.

Piezoelectric vibrator

The piezoelectric vibrator exhibits a vibrator plate (12) which exhibits virtually identically shaped electrodes (13, 14) on its opposite surfaces. Corresponding electrodes on both sides are electrically connected to one another and are thus fed in phase. The vibrator plate contains recesses (17, 18). The electrodes are correspondingly shaped and adjoin these recesses. By insertion in these recesses, electrically conductive material forms the electric connection between the electrodes on the front and rear and the mechanical connection of the vibrator plate with conductor strips via which the electrodes are connected to an external voltage source.

VIBRATOR HAS TUNING FORK HAS QUARTZ CRYSTAL.

PIEZOELECTRIC VIBRATOR THICKNESS SHEAR MODE.

Piezoelectric resonator with prismatic quartz crystal

Piezoelectric resonator with prismatic quartz crystal has electrodes on opposite long faces of crystal and extending onto third face to meet connecting support wires ...

PIEZOELECTRIC RESONATOR HAS MODE OF VIBRATION OF CONTOUR.

PIEZOELECTRIC MICRO-RESONATEUR.

Electrode for tuning fork type quartz crystal vibrator

Piezo-electric resonator

A VIBRATOR ASSEMBLY COMPRISING PIEZOELECTRIC LONGITUDINAL VIBRATION AND ITS MANUFACTURING METHOD.

THICKNESS-SHEARING MODE VIBRATOR

Autobalance circuit of the oscillation frequency of an oscillating mechanical system, and device comprising the same.

Le circuit dautorégulation (10) permet de réguler la fréquence doscillation dun système mécanique oscillant, tel quun balancier ayant un ressort spiral. Un élément piézoélectrique ou à polymère électro-actif (23) est monté sur le ressort spiral en oscillation pour générer une tension alternative (V P ). Le circuit dautorégulation est relié à lélément piézoélectrique ou à polymère électro-actif pour dune part redresser la tension alternative (V P ) générée par lélément piézoélectrique ou à polymère actif, et réguler la fréquence de la tension alternative. La tension redressée est stockée sur un condensateur (Cc) pour alimenter le circuit dautorégulation. Le circuit dautorégulation comprend encore un étage oscillateur (15) relié à un résonateur MEMS (16) pour fournir un signal de référence (V R ), des moyens de comparaison (12, 13, 14, 17) pour comparer la fréquence de la tension alternative (V P ) avec la fréquence du signal de référence (V R ), et une unité dadaptation de fréquence (18) ...

Manufacturing process of a piezoelectric vibrator and a piezoelectric vibrator with special electrode structure manufactured in this procedure.

Autobalance circuit of the oscillation frequency of an oscillating mechanical system, and device comprising the same.

Le circuit d’autorégulation (10) permet de réguler la fréquence d’oscillation d’un système mécanique oscillant, tel qu’un balancier ayant un ressort spiral. Un élément piézoélectrique ou à polymère électro-actif (23) est monté sur le ressort spiral en oscillation pour générer une tension alternative (V P ). Le circuit d’autorégulation est relié à l’élément piézoélectrique ou à polymère électro-actif pour d’une part redresser la tension alternative (V P ) générée par l’élément piézoélectrique ou à polymère actif, et réguler la fréquence de la tension alternative. La tension redressée est stockée sur un condensateur (C C ) pour alimenter le circuit d’autorégulation. Le circuit d’autorégulation comprend encore un étage oscillateur (15) relié à un résonateur MEMS (16) pour fournir un signal de référence (V R ), des moyens de comparaison (12, 13, 14, 17) pour comparer la fréquence de la tension alternative (V P ) avec la fréquence du signal de référence (V R ), et une unité d’adaptation de fréquence ...

Resonator with novel release structure and preparation method thereof

Piezoelectric vibrating piece and method of fabricating piezoelectric vibrating piece

The present invention relates to a piezoelectric vibrating piece and a method for fabricating piezoelectric vibrating piece. To achieve small-sized formation by shortening a total length after ensuring a length of a base portion capable of sufficiently reducing vibration leakage, there is provided a piezoelectric vibrating piece 2 including a piezoelectric plate 10 including a pair of vibrating arm portions 11, 12 arranged in parallel with each other in a state of being extended in one direction from base ends to front ends, and a base portion 13 having connecting portions 13a respectively connected to the pair of vibrating arm portions at middle positions from the base ends to the front ends for integrally supporting the pair of vibrating arm portions by way of the connecting portions, exciting electrodes 20, 21 respectively formed on outer surfaces of the pair of vibrating arm portions for vibrating the pair of vibrating arm portions when a drive voltage is applied thereto, a pair ofmount ...

Decoupling stacked bulk acoustic resonator device

Base construction of quartz resonator

Surface acoustic wave device with superimposed quasiperiodic strip array structure

Energy-trapped type thickness extensional vibration mode piezoelectric resonator

Piezoelectric devices

Device resonator with piezoelectric ceramics

CRYSTAL FILTER HAS RESISTANCES OF LOAD INTEGREES AND MANUFACTORING PROCESS

PIEZOELECTRIC FILTER

Delay line with transducer

Improvements to delay lines solid

Media devices for piezoelectric crystals

CRYSTAL RESONATOR ELECTRODE NON-ADHERENT TO THE CRYSTAL

PIEZOELECTRIC RESONATORS

VIBRATOR HAS QUARTZ CRYSTAL

MICRO/NANO-RESONATEUR COMPENSATES HAS CAPACITIVE DETECTION AMELIOREE AND PROCESS Of DEVELOPMENT

Le résonateur comporte un élément oscillant (1) et des première (2) et deuxième (3) électrodes d'excitation de l'élément oscillant (1). Un générateur de signaux alternatifs est connecté aux première (2) et deuxième (3) électrodes d'excitation et il délivre sur les première (2) et deuxième (3) électrodes des premier et second signaux de même amplitudes et en opposition de phase. Une première source de tension continue est connectée à une troisième électrode (4). Une seconde source de tension continue est connectée à une quatrième électrode (5). Une électrode additionnelle (6) est connectée électriquement à l'élément oscillant (1). Un signal représentatif de l'oscillation de l'élément oscillant (1) étant fourni par l'électrode additionnelle (6) formée par un pont d'ancrage de l'élément oscillant (1) et polarisée par une troisième tension continue.

RESONATOR HAS QUARTZ HAS COUPLING OF MODES

ELASTIC WAVE DEVICE

An objective of the present invention is to suppress an unnecessary wave. An elastic wave device according to the present invention comprises: a piezoelectric panel (18); and an interdigital transducer (IDT; 10) which is formed on the piezoelectric substrate, includes an electrode sheet (12), and excites an elastic wave. An anisotropy coefficient is a positive value. An intersection area (36), where the electrode sheets of the IDT intersect each other, includes a center area (30), which is formed at a center in a drawing direction of the electrode sheet, and an edge area (32) which is formed at an edge in the drawing direction. The electrode sheets in the center area and the edge area are connected with each other. The electrode sheet in the edge area is inclined with respect to the electrode sheet in the center area such that a pitch in a width direction of the electrode sheet in the edge area is greater than a pitch in a width direction of the electrode sheet in the center area. An angle ...

Quartz crystal device

TOPOGRAPHICAL STRUCTURE AND METHOD FOR PRODUCING IT

The production of BAW resonators usually comprises the heteroepitaxial growth of a piezo-layer (PS) above a carrier and metal layers (TS, M1, M2). This form of layer growth leads to a columnar, polycrystalline piezo-layer and results in known growth defects in the crystal microstructure along topology steps. Such growth defects have consequences for the technical properties and the reliability of the BAW resonators. Therefore, a problem addressed by the present invention is that of specifying a structure suitable for BAW electrodes, for example, and a method for producing said structure with which the problems that occur during the production process can be avoided and the susceptibility of specific metal layers to corrosion can be reduced. This is accomplished with the aid of the topographical structure according to the invention, in which a structured cover (AB) along topology steps brings about edge smoothing and includes protection for corrosion-sensitive metal layers.

METHOD AND DEVICE FOR CONTROLLING A PIEZOELECTRIC MOTOR

A method and device are disclosed for actuating a piezoelectric motor by two driving electrodes by applying periodic control voltages to the driving electrodes. A simplified closed-loop control of the piezoelectric motor is realized by reducing the static friction of a friction contact between a friction element of the piezo-electric motor and an output element to be driven by the friction element without a propulsion of the output element at the same time. In exemplary embodiments, the periodic control voltages are applied with a phase shift to the driving electrodes in a first step of the method, and in a second step of the method, the amplitude ratio of the periodic control voltages is changed with respect to the first step.

Chip-type piezoelectric resonance component

In a chip-type piezoelectric resonance component, a piezo-resonator (3) is fixed onto a base substrate (2) and a cap member (4) is fixed to the base substrate (2) to enclose the piezo-resonator (3). The piezo-resonator (3) is provided with upper and lower surfaces having shorter and longer sides of lengths a and b at a ratio which is set in the range of ±10% about a value satisfying the following equation: b/a=n(-1.47σ+1.88) (1) (n: integer) assuming that σ represents the Poisson's ratio of a piezoelectric material.

Diffraction electroacoustic transducer

In a bulk piezoelectric crystal an arbitrary wavefront of an acoustic wave is reconstructed from an array of wavelets generated subjacent a set of interdigital electrodes on a surface of the crystal.

Microelectromechanical filter

A microelectromechanical filter is provided. The microelectromechanical filter includes an input electrode, an output electrode, one or several piezoelectric resonators, one or several high quality factor resonators, and one or several coupling beams. The input electrode and the output electrode are disposed on the piezoelectric resonators. The high quality factor resonator is silicon or of piezoelectric materials, and there is no metal electrode on top of the resonator. The coupling beam is connected between the piezoelectric resonator and the high quality factor resonator. The coupling beam transmits an acoustic wave among the resonators, and controls a bandwidth of filter. The microelectromechanical filter with low impedance and high quality factor fits the demand for next-generation communication systems.

Bulk acoustic wave resonator and bulk acoustic wave filter and method of fabricating bulk acoustic wave resonator

A bulk acoustic wave (BAW) resonator includes a substrate, and two electrodes stacked on the substrate, and at least one piezoelectric layer interposed between the two electrodes. The two electrodes and the piezoelectric layer are at least partially overlapped with each other in a vertical projection direction, and one of the two electrodes has a plurality of openings.

Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator

In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer

A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

Piezoelectric vibrating piece, piezoelectric device, and method for manufacturing piezoelectric device

A piezoelectric vibrating piece is to be bonded to and sandwiched between a lid plate and a base plate with an external electrode. The piezoelectric vibrating piece has a first main surface at the lid plate side and a second main surface at the base plate side. The piezoelectric vibrating piece includes an excitation unit, a first excitation electrode, a second excitation electrode, a framing portion, one connecting portion, a first extraction electrode, and a second extraction electrode. The connecting portion includes a planar surface parallel to both the main surfaces and a side face intersecting with the planar surface. The first extraction electrode is extracted via the connecting portion. The second extraction electrode is extracted via the connecting portion. The first extraction electrode is disposed on at least a part of the side face of the connecting portion to be extracted to the framing portion.

BULK ACOUSTIC WAVE RESONATOR

Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit. 1. A bulk acoustic wave resonator (BAWR) , comprising:a bulk acoustic wave resonance unit comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; andan air edge formed at a distance from a center of the bulk acoustic wave resonance unit.2. The BAWR of claim 1 , wherein the air edge is an etched portion of an edge of the bulk acoustic wave resonance unit about as thick as the bulk acoustic wave resonance unit in a vertical direction.3. The BAWR of claim 1 , further comprising:an air gap, disposed below the bulk acoustic wave resonance unit and on a substrate, that reflects a vertical acoustic wave generated from the bulk acoustic wave resonance unit.4. The BAWR of claim 3 , wherein the air edge is a predetermined penetrated portion of an edge of the bulk acoustic wave resonance unit up to the air gap in a vertical direction.5. The BAWR of claim 1 , wherein the air edge is an enlarged via-hole disposed on the bulk acoustic wave resonance unit.6. The BAWR of claim 1 , wherein the first electrode claim 1 , the second electrode claim 1 , and the piezoelectric layer are etched in the same process by application of a photo-mask layered on a portion different from an edge of the bulk acoustic wave resonance unit so that the air edge has a steep slope.7. The BAWR of claim 1 , wherein the air edge is formed on a portion of an edge of the bulk acoustic wave resonance unit claim 1 , the portion being greater than or equal to 20% of the edge.8. The BAWR of claim 1 , further comprising:a bridge, disposed on a area excluding a portion where the ...

Piezoelectric resonator with airgap

This disclosure provides implementations of electromechanical systems (EMS) piezoelectric resonator structures, transformers, devices, apparatus, systems, and related processes. In one aspect, a piezoelectric resonator structure includes a first conductive electrode layer, a second conductive electrode layer, and a piezoelectric layer arranged between the first and second conductive layers. In some implementations, the surface of the piezoelectric layer adjacent to the first conductive layer is separated from the first conductive layer by a first gap, and the surface of the piezoelectric layer adjacent to the second conductive layer is separated from the second conductive layer by a second gap. In some implementations, the resonator structure further includes an encapsulation layer arranged over the second conductive layer and providing physical support to the second conductive layer.

Piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece

Mounting electrodes are formed in a state of being separated from excitation electrodes on one main surface of a base portion, and the excitation electrodes are formed on another main surface of a piezoelectric plate and includes base portion electrodes which are connected to the excitation electrodes and conducting portions which electrically connect the mounting electrodes and the base portion electrodes in a thickness direction of the piezoelectric plate.

ELASTIC WAVE DEVICE AND ELECTRONIC DEVICE USING THE SAME

An elastic wave device has the following elements: a piezoelectric substrate; an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate; internal electrodes disposed above the piezoelectric substrate and electrically connected to the IDT electrode; side walls disposed above the internal electrodes surrounding the IDT electrode; a cover disposed above the side walls so as to cover a space above the IDT electrode; an electrode base layer disposed on the internal electrodes outside the side walls; and connection electrodes disposed on the electrode base layer. Each connection electrode has a first connection electrode disposed on the electrode base layer, and a second connection electrode disposed on the first connection electrode. The horizontal sectional shape of the second connection electrode is non-circular. 110-. (canceled)11. An elastic wave device comprising:a piezoelectric substrate;an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate;an internal electrode disposed above the piezoelectric substrate and electrically connected to the IDT electrode;a side wall disposed above the piezoelectric substrate surrounding the IDT electrode;a cover disposed above the side wall so as to cover a space above the IDT electrode; anda connection electrode disposed above the internal electrode,wherein the connection electrode has a first connection electrode disposed above the internal electrode, and a second connection electrode disposed on the first connection electrode, the second connection electrode has a horizontal sectional shape that is a non-circular shape, and the non-circular shape has a curved perimeter.12. The elastic wave device of claim 11 , wherein a horizontal sectional area of the second connection electrode is smaller than a horizontal sectional area of the first connection electrode.13. The elastic wave device of claim 11 , wherein the non-circular shape is an elliptical shape.14. The elastic wave ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH MULTI-PITCH INTERDIGITAL TRANSDUCER

There are disclosed acoustic resonators and methods of fabricating acoustic resonators. An acoustic resonator includes a piezoelectric plate having front and back surfaces, the back surface facing a substrate. A portion of the piezoelectric plate forms a diaphragm spanning a cavity in the substrate. A conductor pattern on the front surface includes a multi-pitch interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm. 1. An acoustic resonator , comprising:a piezoelectric plate having front and back surfaces, the back surface facing a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate; anda conductor pattern on the front surface, the conductor pattern comprising a multi-pitch interdigital transducer (IDT), interleaved fingers of the IDT on the diaphragm.2. The acoustic resonator of claim 1 , whereinthe piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.3. The acoustic resonator of claim 1 , wherein claim 1 ,at any point along a length of the IDT, a pitch of the IDT is constant across an aperture of the IDT.4. The acoustic resonator of claim 1 , whereina mark of the IDT fingers is constant over the entire IDT.5. The acoustic resonator of claim 1 , whereinthe multi-pitch IDT is divided along its length into two or more sections, with each section having a respective pitch different from a pitch of each other section.6. The acoustic resonator of claim 5 , whereina maximum pitch of the multi-pitch IDT is p(1+δ) for one of the two or more sections, anda minimum pitch of the multi-pitch IDT is p(1−δ) for another of the two or more sections,where p is a nominal pitch and δ is greater than 0 and less than or equal to 0.05.7. The acoustic resonator of claim 6 , whereinδ is less than or equal to 0.01.8. The acoustic resonator of claim 6 , whereinthe multi-pitch IDT is divided into three sections, ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH ETCHED CONDUCTOR PATTERNS

An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having a back surface bonded to the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate and has interleaved fingers on a diaphragm spanning a cavity in the substrate. An etch-stop layer is formed on the front surface of the piezoelectric plate between the interleaved fingers. A portion of the piezoelectric plate and the etch-stop layer form the diaphragm. The etch-stop layer is impervious to the etch process used to form the interleaved fingers. The etch-stop layer may be formed on the piezoelectric plate between but not under the interleaved fingers. In other cases, the etch-stop layer is formed on the piezoelectric plate between and under the interleaved fingers. 1. An acoustic resonator device comprising:a substrate having a surface;a single-crystal piezoelectric plate having front and back surfaces, the back surface of the piezoelectric plate bonded to a front surface of the substrate;an interdigital transducer (IDT) formed on the front surface of the single-crystal piezoelectric plate, the IDT having interleaved fingers disposed on a diaphragm spanning a cavity in the substrate; andan etch-stop layer formed on the front surface of the piezoelectric plate between the interleaved fingers, a portion of the piezoelectric plate and the etch-stop layer forming the diaphragm, whereinthe etch-stop layer is impervious to an etch process used to form the interleaved fingers.2. The device of claim 1 , wherein the etch-stop layer is formed on the front surface of the piezoelectric plate between but not under the interleaved fingers claim 1 ,3. The device of claim 1 , wherein the etch-stop layer is formed on the front surface of the piezoelectric plate between and under the interleaved fingers claim 1 ,4. The device of claim 1 , wherein the single-crystal piezoelectric plate is one of lithium niobate and lithium tantalate; ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH A CAVITY HAVING A CURVED PERIMETER

Acoustic filters, resonators and methods are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer is formed on the front surface of the piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. At least a portion of a perimeter of the cavity is curved. 1. An acoustic resonator device comprising:a substrate having a surface;a piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate; andan interdigital transducer (IDT) formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm, wherein the piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, and at least a portion of a perimeter of the cavity is curved.2. The device of claim 1 , wherein the perimeter of the cavity is defined by an intersection of the cavity and the surface of the substrate.3. The device of claim 1 , wherein the perimeter of the cavity is corner-less.4. The device of claim 1 , wherein the perimeter of the cavity is continuously curved.5. The device of claim 1 , wherein the perimeter of the cavity is continuously convex.6. The device of claim 1 , wherein the perimeter of the cavity is elliptical.7. The device of claim 1 , wherein the perimeter of the cavity is a rectangle with at least one rounded corner.8. The device of claim 1 , wherein a least a portion of the perimeter of the cavity is concave.9. The device of claim 1 , wherein the perimeter of the cavity is asymmetrical ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH ETCHED CONDUCTOR PATTERNS

An acoustic resonator is fabricated by forming a patterned first photoresist mask on a piezoelectric plate at locations of a desired interdigital transducer (IDT) pattern. An etch-stop layer is then deposited on the plate and first photoresist mask. The first photoresist mask is removed to remove parts of the etch-stop and expose the plate. An IDT conductor material is deposited on the etch stop and the exposed plate. A patterned second photoresist mask is then formed on the conductor material at locations of the IDT pattern. The conductor material is then etched over and to the etch-stop to form the IDT pattern which has interleaved fingers on a diaphragm to span a substrate cavity. A portion of the plate and the etch-stop form the diaphragm. The etch-stop and photoresist mask are impervious to this etch. The second photoresist mask is removed to leave the IDT pattern. 1. A method of fabricating an acoustic resonator device comprising:forming a patterned first photoresist mask on a front surface of a single-crystal piezoelectric plate at locations of a desired IDT pattern;blanket depositing an etch-stop layer on the front surface of the single-crystal piezoelectric plate where the patterned first photoresist mask does not exist and on the patterned first photoresist mask;removing the patterned first photoresist mask and the etch-stop layer on the patterned first photoresist mask to expose the front surface of the piezoelectric plate at locations of the desired IDT pattern;depositing an interdigital transducer (IDT) conductor material on the etch stop layer and on the exposed front surface of the piezoelectric plate;forming a patterned second photoresist mask on the conductor material at locations of the desired IDT pattern;using an etch process to etch the conductor material over and to the etch-stop layer to form the desired IDT pattern, the desired IDT pattern having interleaved fingers disposed on a diaphragm configured to span a cavity in a substrate, a portion ...

FILM BULK ACOUSTIC RESONATOR PACKAGE WITH THIN FILM SEALING STRUCTURE AND MANUFACTURING METHOD THEREFOR

A method for manufacturing a film bulk acoustic resonator (FBAR) package with a thin film sealing structure includes: forming an FBAR having a bottom electrode, a piezoelectric layer, and a top electrode on a substrate; forming a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR; attaching a PR (photo-resist) film to tops of the inner pad electrodes; etching the PR film to expose the inner pad electrodes to the outside; and forming a sealing layer on top of the PR film and tops of the exposed inner pad electrodes. 1. A method for manufacturing a film bulk acoustic resonator (FBAR) package with a thin film sealing structure , the method comprising the steps of:forming an FBAR having a bottom electrode, a piezoelectric layer, and a top electrode on a substrate;forming a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR;attaching a PR (photo-resist) film to tops of the inner pad electrodes;etching the PR film to expose the inner pad electrodes to the outside; andforming a sealing layer on top of the PR film and tops of the exposed inner pad electrodes.2. The method according to claim 1 , further comprising the step of etching the sealing layer disposed on the inner pad electrodes to form vias through which the inner pad electrodes are exposed to the outside again.3. The method according to claim 2 , further comprising the step of forming insulating layers on the inner peripheral surfaces of the vias.4. The method according to claim 2 , further comprising the step of forming outer pad electrodes on top of the sealing layer in such a manner as to be connected to the inner pad electrodes through the vias.5. The method according to claim 1 , further comprising the step of forming an air cavity on the substrate before the FBAR is formed.6. The method according to claim 1 , wherein the step of forming the sealing layer comprises the step of ...

Magnetoelectric Antenna Arrays

Two or more ME resonators are connected in series and in parallel generating a high sensitive, energy efficient and broadband miniature antenna and other conductor devices. 1. An ME antenna , comprising: a magnetostrictive layer;', 'a top ground electrode layer;', 'a piezoelectric layer;', 'a bottom electrode layer; and', wherein said top ground electrode layer is deposited on said piezoelectric layer and is patterned with a shaped aperture; the magnetostrictive layer is also deposited on said piezoelectric layer through the shaped aperture; the piezoelectric layer is deposited on the bottom electrode layer which is deposited on the substrate layer;', 'thereby the magnetostrictive layer and the piezoelectric form a heterostructure on the bottom electrode layer, leading to magnetization oscillation that radiates electromagnetic waves at the acoustic resonance frequencies and converts the electromagnetic waves into a piezoelectric voltage output., 'a substrate layer;'}], 'one or more resonators electronically connected in series or in parallel, each of said resonators having a structure of'}2. The ME antenna of claim 1 , wherein the electrode layer is deposited with materials comprising at least one of the materials claim 1 , including Molybdenum (Mo) claim 1 , Titanium (Ti) claim 1 , Tungsten (W) claim 1 , Gold (Au) claim 1 , Platinum (Pt) and Aluminum (Al) claim 1 , and Ru (Ruthenium).3. The ME antenna of claim 1 , wherein the piezoelectric layer comprises a material comprising at least one of the piezoelectric materials selected from Aluminum Nitride Scadium Nitride (AlSN) claim 1 , Aluminum Nitride (AlN) claim 1 , (Hf claim 1 ,X)Owith X=Zr claim 1 , Si claim 1 , etc. claim 1 , Barium titanate (BaTiO) claim 1 , Gallium phosphate (GaPO) claim 1 , Lanthanum gallium silicate (LGS) claim 1 , Lead scandium tantalate (PST) claim 1 , Zinc oxide (ZnO) claim 1 , Quartz claim 1 , Lead zirconate titanate (PZT) claim 1 , Lithium tantalate (LiTaO) claim 1 , Lead lanthanum ...

HIGH-FREQUENCY FILTER, FRONT-END CIRCUIT, AND COMMUNICATION DEVICE

A high-frequency filter includes a variable frequency filter, a fixed frequency filter, and switches. The variable frequency filter varies a passband in association with frequencies used in multiple communication band. The fixed frequency filter fixes a passband in association with a frequency used in a specific communication band different from the multiple communication bands. The switches are used to switch connection configuration to the variable frequency filter or the fixed frequency filter. 1. A high-frequency filter comprising:a variable frequency filter configured to vary a passband in accordance with frequencies of a plurality of communication bands;a fixed frequency filter configured to fix a passband in accordance with a frequency in a fixed communication band, the fixed communication band not being one of the plurality of communication bands; anda switch configured to switch connection of the variable frequency filter or the fixed frequency filter between input and output terminals of the high-frequency filter.2. The high-frequency filter according to claim 1 ,wherein the fixed frequency filter does not include any variable reactance element, andwherein the variable frequency filter includes at least one variable reactance element.3. The high-frequency filter according to claim 2 , further comprising:at least one filter characteristic adjusting circuit configured to selectively connect a capacitor having a fixed capacitance to the fixed frequency filter or the variable frequency filter,wherein the filter characteristic adjusting circuit is connected to at least one end of the fixed frequency filter.4. The high-frequency filter according to claim 2 ,wherein the variable frequency filter includes a first circuit portion having basic frequency characteristics and a second circuit portion configured to selectively connect a capacitor to the first circuit portion thereby adjusting the basic frequency characteristics.5. The high-frequency filter according to ...

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator or filter device , the method comprising:providing a substrate having a substrate surface region and a substrate backside cavity region;forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside metal electrode overlying the top piezoelectric surface region;forming a topside micro-trench within a portion of the piezoelectric layer;forming a backside metal electrode underlying or in proximity of the bottom piezoelectric surface region within the substrate backside cavity region, the backside metal electrode being electrically coupled to a micro-via configured within the topside micro-trench; andremoving a portion of the piezoelectric layer to form a first topside groove on the top piezoelectric surface region.2. The method of wherein the piezoelectric layer comprises an essentially single crystal material or a ...

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator device , the method comprising:providing a substrate having a substrate surface region and a substrate backside cavity region characterized by a cavity geometric area;forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside energy confinement structure overlying the top piezoelectric surface region, the topside energy confinement structure being characterized by a topside structure geometric area and a topside structure perimeter, the topside energy confinement structure having at least one portion removed forming a topside structure break region;forming a topside metal electrode overlying the top piezoelectric surface region and within the topside energy confinement structure, the topside metal electrode being characterized by a topside electrode geometric area; andforming a topside sandbar structure overlying the top ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR AND FILTER WITH A UNIFORM-THICKNESS DIELECTRIC OVERLAYER

Acoustic filters, resonators and methods are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms. Zero or more dielectric layers are deposited over all of the IDTs and the diaphragms, wherein a total thickness of the zero or more dielectric layers is the same for all of the plurality of acoustic resonators. 1. An acoustic filter device comprising:a substrate having a surface;a single-crystal piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate;a conductor pattern formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms; andone or more dielectric layers deposited over all of the IDTs and the diaphragms, wherein a total deposited thickness of the one or more dielectric layers is the same for all of the plurality of acoustic resonators.2. The device of claim 1 , wherein the one or more dielectric layers comprises a passivation/tuning layer.3. The device of claim 1 , wherein the one or more dielectric layers consists of a ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH REDUCED SPURIOUS MODES

Acoustic filters, resonators and methods are disclosed. An acoustic resonator device includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern including an interdigital transducer (IDTs), interleaved fingers of the IDT disposed on the diaphragm. A pitch of the interleaved fingers and a mark of the interleaved fingers are set in combination such that a resonance frequency of the acoustic resonator is equal to a predetermined target frequency. 1. An acoustic resonator device comprising:a substrate having a surface;a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate; anda conductor pattern formed on the front surface of the piezoelectric plate, the conductor pattern including an interdigital transducer (IDTs), interleaved fingers of the IDT disposed on the diaphragm,wherein a pitch of the interleaved fingers and a mark of the interleaved fingers are set in combination such that a resonance frequency of the acoustic resonator is equal to a predetermined target frequency.2. The device of claim 1 , whereina ratio of the mark of the interleaved fingers to the pitch of the interleaved fingers is greater than or equal to 0.2 and less than or equal to 0.3.3. The device of claim 1 , whereina ratio of the mark of the interleaved fingers to the pitch of the interleaved fingers is greater than or equal to 0.235 and less than or equal to 0.265.4. The device of wherein the interleaved fingers of the IDT are aluminum with a thickness greater than or equal to 50 nm and less than or equal to 150 nm.5. The device of claim 1 , ...

Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics

A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yittrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.

PIEZOELECTRIC RESONATOR DEVICE

A piezoelectric resonator device having a sandwich structure is provided, which is capable of improving reliability while ensuring hermeticity of the internal space in which a vibrating part of the piezoelectric resonator plate is sealed. A crystal resonator includes: a crystal resonator plate a first sealing member covering a first excitation electrode of the crystal resonator plate and a second sealing member covering a second excitation electrode of the crystal resonator plate A third through hole is formed in the crystal resonator plate to penetrate between a first main surface and a second main surface A through electrode of the third through hole is conducted to the first excitation electrode A seventh through hole is formed in the first sealing member to penetrate between a first main surface and a second main surface The through electrode of the third through hole is conducted to the through electrode of the seventh through hole The third through hole is not superimposed to the seventh through hole in plan view. 1. A piezoelectric resonator device , comprising: a first sealing member covering the first excitation electrode of the piezoelectric resonator plate;', 'a second sealing member covering the second excitation electrode of the piezoelectric resonator plate; and', 'an internal space formed by bonding the first sealing member to the piezoelectric resonator plate and by bonding the second sealing member to the piezoelectric resonator plate, the internal space hermetically sealing a vibrating part including the first excitation electrode and the second excitation electrode of the piezoelectric resonator plate,', 'wherein through holes for the piezoelectric resonator plate are formed in the piezoelectric resonator plate so as to penetrate between the first main surface and the second main surface, the through holes for the piezoelectric resonator plate including: respective through electrodes for establishing conduction between electrodes formed on the ...

ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION

An acoustic resonator is disclosed. The acoustic resonator comprises a substrate, a first electrode, a second electrode and a piezoelectric layer positioned between the first electrode and the second electrode. An acoustic reflector is positioned between the first electrode and the substrate. An active area comprises a region of contacting overlap of the acoustic reflector, the first electrode, the piezoelectric layer and the second electrode. A gap region extends around the active area. 1. An acoustic resonator , comprising:a substrate;a first electrode;a second electrode;a piezoelectric layer positioned between the first electrode and the second electrode;an acoustic reflector positioned between the first electrode and the substrate; andan active area comprising a region of contacting overlap of the acoustic reflector, the first electrode, the piezoelectric layer and the second electrode, wherein a gap region extends around the active area.2. The acoustic resonator of claim 1 , wherein the acoustic resonator further comprises:a interconnection side comprising a bridge, wherein a bridge gap exists between the piezoelectric layer and the second electrode; anda plurality of non-connecting sides, each comprising a cantilever portion, wherein each cantilevered portion is disposed over a respective cantilever gap, and the gap region comprises the bridge gap and each of the cantilever gaps.3. The acoustic resonator of claim 1 , wherein the gap region comprises an air gap.4. The acoustic resonator of claim 1 , wherein the gap region comprises a low acoustic impedance material.5. The acoustic resonator of claim 1 , wherein the acoustic reflector comprises one of a cavity claim 1 , and a Bragg reflector.6. The acoustic resonator of claim 1 , the active area comprises a polygon having a plurality of sides.7. The acoustic resonator of claim 6 , wherein the second electrode comprises a bridge on an interconnection side claim 6 , wherein a bridge gap exists between the second ...

LATERAL BULK ACOUSTIC WAVE FILTER

Acoustic wave filter devices is disclosed. The device includes a piezoelectric layer, an input electrode and an output electrode located on a top surface of the piezoelectric layer and physically separated from one another, and a counter electrode having a top surface connected to a bottom surface of the piezoelectric layer. The input and output electrodes each include a base and at least one extension extending from the base. The at least one extension of the input electrode extending alongside and in a generally opposite direction to and separated by a gap width from an adjacent extension of the at least one extensions of the output electrode. In some embodiments, the at least one extension of the input or output electrodes has a width that can changes from a first end of the at least one extension to a second end. 121-. (canceled)22. An acoustic wave filter device comprising:a piezoelectric layer;an input electrode and an output electrode located on a top surface of the piezoelectric layer and physically separated from one another, the input and the output electrodes each including a base and one or more extensions extending from the base, the one or more extensions of the input electrode extending alongside and in a generally opposite direction to and separated by a gap width from an adjacent extension of the one or more extensions of the output electrode,each of the one or more extensions of the input and the output electrodes having a respective length that extends from the base of one of the input and the output electrodes towards the base of the other one of the input and the output electrode; anda counter electrode having a top surface connected to a bottom surface of the piezoelectric layer,wherein a thickness of the piezoelectric layer and the gap width between adjacent extensions of the input and output electrodes are such that application of a radio frequency voltage between the input electrode and the counter electrode creates acoustic thickness- ...

BULK-ACOUSTIC WAVE RESONATOR

A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10. 1. A bulk-acoustic wave resonator , comprising:a substrate;a lower electrode disposed on the substrate;a piezoelectric layer at least partially covering the lower electrode; andan upper electrode at least partially covering the piezoelectric layer,wherein, on a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area,wherein the active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio, andwherein the aspect ratio is greater than or equal to 2 and less than or equal to 10.2. The bulk-acoustic wave resonator according to claim 1 , wherein the rectangle defining the aspect ratio is a rectangle having a largest aspect ratio among rectangles contacting three or more vertices of the polygon.3. The bulk-acoustic wave resonator according to claim 1 , wherein the polygon is a polygon having N angles claim 1 , wherein N is an even number greater than or equal to 4.4. The bulk-acoustic wave resonator according to claim 1 , further comprising a ...

ACOUSTIC WAVE DEVICE INCLUDING MULTIPLE DIELECTRIC FILMS

An acoustic wave device comprises an IDT electrode disposed above an upper surface of a piezoelectric substrate and includes a plurality of electrode fingers configured to excite a main acoustic wave. A first dielectric film made of an oxide is disposed above the upper surface of the piezoelectric substrate and covers the plurality of electrode fingers. A second dielectric film made of non-oxide is disposed between the first dielectric film and each of the plurality of electrode fingers. A third dielectric film is disposed between the piezoelectric substrate and the plurality of electrode fingers. A speed of a transverse wave propagating through the third dielectric film is greater than a speed of the main acoustic wave propagating through the piezoelectric substrate. The third dielectric film contacts the first dielectric film between adjacent electrode fingers of the plurality of electrode fingers. 1. An acoustic wave device comprising:a piezoelectric substrate having an upper surface;an interdigital transducer electrode disposed above the upper surface of the piezoelectric substrate, the interdigital transducer electrode including a plurality of electrode fingers configured to excite a main acoustic wave;a first dielectric film made of an oxide and disposed above the upper surface of the piezoelectric substrate and covering the plurality of electrode fingers;a second dielectric film made of non-oxide and disposed on upper surfaces of the plurality of electrode fingers and between the first dielectric film and each of the plurality of electrode fingers; anda third dielectric film disposed between the piezoelectric substrate and the plurality of electrode fingers, a speed of a transverse wave propagating through the third dielectric film being greater than a speed of the main acoustic wave propagating through the piezoelectric substrate, the third dielectric film contacting the first dielectric film between adjacent electrode fingers of the plurality of electrode ...

SOLIDLY-MOUNTED TRANSVERSELY-EXCITED FILM BULK ACOUSTIC DEVICE

Resonator and filter devices and methods of fabrication. A resonator chip includes a substrate, a piezoelectric plate, and an acoustic Bragg reflector between the substrate and a back surface of the piezoelectric plate. A conductor pattern on a front surface of the piezoelectric plate includes a first plurality of contact pads and an interdigital transducer (IDT). The IDT and the piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate. The acoustic Bragg reflector is configured to reflect the shear primary acoustic mode. An interposer has a second plurality of contact pads on a back surface. A seal connects a perimeter of the piezoelectric plate to a perimeter of the interposer. Each contact pad of the first plurality of contact pads is directly connected to a respective contact pad of the second plurality of contact pads. 1. An acoustic resonator device comprising: a substrate;', 'a piezoelectric plate having front and back surfaces;', 'a first conductor pattern on the front surface of the piezoelectric plate, the first conductor pattern comprising a first plurality of contact pads and an interdigital transducer (IDT), the IDT and the piezoelectric plate configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate; and', 'an acoustic Bragg reflector between a surface of the substrate and the back surface of the piezoelectric plate, the acoustic Bragg reflector configured to reflect the shear primary acoustic mode;, 'an acoustic resonator chip comprisingan interposer comprising a second conductor pattern, the second conductor pattern comprising a second plurality of contact pads on a back surface of the interposer; anda seal connecting a perimeter of the piezoelectric plate to a perimeter of the interposer, whereineach contact pad of the first plurality of contact pads is directly connected to ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR FILTERS WITH SUB-RESONATORS HAVING DIFFERENT MARK AND PITCH

Radio frequency filters are disclosed. A filter includes a first transversely-excited film bulk acoustic resonator (XBAR) having a first sub-resonator and a second sub-resonator connected in parallel. A pitch of the first sub-resonator is not equal to a pitch of the second sub-resonator and/or a mark of the first sub-resonator is not equal to a mark of the second sub-resonator. 1. A filter comprising:a first transversely-excited film bulk acoustic resonator (XBAR) comprising a first sub-resonator and a second sub-resonator connected in parallel, whereina pitch of the first sub-resonator is not equal to a pitch of the second sub-resonator and/or a mark of the first sub-resonator is not equal to a mark of the second sub-resonator.2. The filter of claim 1 , whereinthe first XBAR comprises three or more sub-resonators including the first and second sub-resonators, andeach of the three or more sub-resonators has a unique pitch and/or each of the three or more sub-resonators has a unique mark.3. The filter of claim 2 , whereineach of the three or more sub-resonators has a unique pitch and a unique mark.4. The filter of claim 2 ,the first XBAR comprises four sub-resonators.5. The filter of claim 1 , wherein the first XBAR is one of a plurality of XBARs connected in a ladder filter circuit.6. The filter of claim 5 , wherein the plurality of XBARs includes at least a second XBAR comprising two or more sub-resonators connected in parallel claim 5 , whereineach of the two or more sub-resonators of the second XBAR has a unique pitch and/or a unique mark.7. A filter claim 5 , comprising: a piezoelectric diaphragm, and', 'an interdigital transducer (IDT), interleaved fingers of the IDT on a surface of the diaphragm, wherein, 'a plurality of transversely-excited film bulk acoustic resonators (XBARs), at least a first XBAR of the plurality of XBARs comprising a first sub-resonator and a second sub-resonator connected in parallel, each sub-resonator comprisinga pitch of the ...

ELLIPTICAL STRUCTURE FOR BULK ACOUSTIC WAVE RESONATOR

An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators. 1. An elliptical-shaped resonator circuit device , the device comprising:a bottom metal plate;a piezoelectric layer overlying the bottom metal plate; anda top metal plate overlying the piezoelectric layer;wherein the top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy.2. The device of wherein the ellipse ratio R ranges from about 1.20 to about 2.0.3. The device of wherein the bottom metal plate and top metal plate include molybdenum (Mo) claim 1 , ruthenium (Ru) claim 1 , or tungsten (W) claim 1 , Aluminum-Copper (AlCu).4. The device of wherein the piezoelectric layer includes materials or alloys having at least one of the following: AlN claim 1 , AlGaN claim 1 , GaN claim 1 , InN claim 1 , InGaN claim 1 , AlInN claim 1 , AlInGaN claim 1 , ScAlN claim 1 , ScGaN claim 1 , AlScYN claim 1 , and BN.5. The device of further comprising one or more pillar-type energy confinement features (ECFs) coupled to the top metal plate or the bottom metal plate; wherein the one or more pillar-type ECFs comprises a dielectric material claim 1 , a metal material claim 1 , or a combination of dielectric and metal materials.6. The device of further comprising one or ...

BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD THEREFOR

The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof, the bulk acoustic wave resonator comprising: an air gap arranged at the external of the effective piezoelectric region, the air gap being formed between the upper electrode and the piezoelectric layer and/or between the piezoelectric layer and the substrate, and covering the end part, proximal to the air gap, of the lower electrode or connecting to the end part of the lower electrode, wherein the air gap is provided with a first end proximal to the effective piezoelectric region, and at least a portion of the upper surface, starting from the first end, of the air gap is an arch-shaped upper surface. The bulk acoustic wave resonator of the present invention capable of increasing a quality factor (Q) and an effective electromechanical coupling coefficient (K) and improving the electrostatic discharge (ESD) immunity. 1. A bulk acoustic wave resonator , comprising a substrate , a lower electrode arranged on the substrate , a piezoelectric layer arranged on the lower electrode , an upper electrode arranged on the piezoelectric layer and an acoustic mirror arranged between the substrate and the lower electrode , wherein mutual overlapping regions of the upper electrode , the piezoelectric layer and the lower electrode in a thickness direction form an effective piezoelectric region , and the effective piezoelectric region in the thickness direction is located in a region , in which the acoustic mirror is located; andthe bulk acoustic wave resonator further comprising:an air gap arranged at the external of the effective piezoelectric region, the air gap being formed between the upper electrode and the piezoelectric layer and/or between the piezoelectric layer and the substrate, and covering the end part, proximal to the air gap, of the lower electrode or connecting to the end part of the lower electrode,wherein the air gap is provided with a first end proximal to the effective ...

RESONATOR

A resonator including a vibrating portion with first and second electrodes and a piezoelectric film formed therebetween. Moreover, a frame surrounds the vibrating portion with a pair of holding units opposite to each other and connecting the vibrating portion with the frame. An extended electrode extends from the holder to the holding unit and either the first or second electrode extends to the holding unit, and is connected to the extended electrode. Furthermore, the resonator includes an electrical resistance value per unit area of the extended electrode that is smaller than an electrical resistance value per unit area of the first electrode or the second electrode that extends to the holding unit. 1. A resonator , comprising:a vibrating portion including at least one first electrode, a second electrode, and a piezoelectric film;a frame that surrounds the vibrating portion;a pair of holding units respectively connecting opposing sides of the vibrating portion to the frame; andat least one extended electrode extending from the frame to one holding unit of the pair of holding units,wherein the at least one first electrode extends from the vibration portion to the one holding unit and is coupled to the extended electrode on the one holding unit, andwherein the at least one extended electrode has an electrical resistance value per unit area that is smaller than an electrical resistance value per unit area of the at least one first electrode extended from the vibration portion to the one holding unit.2. The resonator according to claim 1 , wherein the one holding unit further includes a protection film of an insulator disposed on the at least one first electrode.3. The resonator according to claim 2 , wherein the at least one extended electrode is connected to the at least one first electrode through a via extending through the protection film.4. The resonator according to claim 1 ,wherein the second electrode extends from the vibration portion to a second holding unit ...

ACOUSTIC RESONATOR DEVICE

The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure.

Resonator

A resonator that includes a rectangular vibrating portion having first and second pairs of sides that provides contour vibration. A frame surrounds a periphery of the vibrating portion and a first holding unit between the frame and one of the first sides and includes a first arm substantially in parallel to the vibrating portion, multiple second arms connecting the first arm with the vibrating portion, and a third arm connecting the first arm with the frame. A first connection line is on the first arm; a first terminal is on the frame; three or more electrodes are on the vibrating portion; and multiple first extended lines are on the second arms and connect first and second electrodes with the first connection line. The first extended lines are connected to the first connection line, which is electrically connected to the first terminal.

CRYSTAL RESONATOR

A crystal resonator vibrates in a thickness-shear mode. The crystal resonator includes excitation electrodes being disposed on a front surface and a back surface of a crystal element. The excitation electrodes are disposed on the crystal element to have a positional relationship, where a displacement distribution at an edge of the excitation electrode on the front surface is identical to a displacement distribution at an edge of the excitation electrode on the back surface. 1. A crystal resonator that vibrates in a thickness-shear mode , the crystal resonator comprising:excitation electrodes, being disposed on a front surface and a back surface of a crystal element, whereinthe excitation electrodes are disposed on the crystal clement to have a positional relationship, where a displacement distribution at an edge of the excitation electrode on the front surface is identical to a displacement distribution at an edge of the excitation electrode on the back surface.2. The crystal resonator according to claim 1 , whereinthe crystal element has a thickness in a Y′-axis direction of a crystal,the crystal element having a principal surface on an X′-Z′-surface of the crystal,the excitation electrodes disposed on the front surface and the back surface of the crystal clement have an identical planar shape and an identical size, anddefining the excitation electrode disposed on a positive Y′-surface as a first excitation electrode and the excitation electrode disposed on a negative Y′-surface as a second excitation electrode, the second excitation electrode is disposed at a position meeting following relationships with respect to the first excitation electrode,(1) the first excitation electrode is moved along an X′-axis of the crystal by a distance dx given by Ttanα in a positive X′-direction,(2) the first excitation electrode is moved along a Z′-axis of the crystal by a distance dy given by Ttanβ in a negative Z′-direction,(3) the second excitation electrode is disposed at a ...

Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers

Methods of fabricating acoustic filters. A back-side frequency setting layer is formed on a surface of a substrate and/or a back surface of a piezoelectric plate. The piezoelectric plate is attached to the substrate with the back-side frequency setting layer sandwiched between the substrate and the piezoelectric plate. Portions of the piezoelectric plate and backside frequency setting layer form diaphragms spanning respective cavities in the substrate. A conductor pattern defining a plurality of acoustic resonators is formed on a front surface of the piezoelectric plate. Each of the acoustic resonators includes an interdigital transducer (IDT) with interleaved fingers disposed on a respective diaphragm. A front-side frequency setting layer is formed over the interleaved fingers and the front surface of the diaphragms of one or more shunt resonators. The back-side frequency setting layer is removed from the back surfaces of the diaphragms of one or more series resonators.

IN-PLANE AND OUT-OF-PLANE DISK RESONATOR

A piezoelectric structure is disclosed which includes a single crystal having piezoelectric coefficients dand dof opposite magnitude, such that when an alternating electric field is applied in the Z direction, the piezoelectric structure expands in one of the X and Y directions and contracts in the other of the X and Y direction, a first electrode coupled to the single crystal, and a second electrode coupled to the single crystal, wherein the alternating electric field is input to the single crystal through the first and second electrodes. 1. A piezoelectric structure , comprising:{'sub': 31', '32, 'a single crystal having piezoelectric coefficients dand dof opposite magnitude, such that when an alternating electric field is applied in the Z direction, the piezoelectric structure expands in one of the X and Y directions and contracts in the other of the X and Y direction, with substantially zero displacement in the Z-direction;'}a first electrode coupled to the single crystal; anda second electrode coupled to the single crystal, wherein the alternating electric field is input to the single crystal through the first and second electrodes.2. The piezoelectric structure of claim 1 , the crystal is Pb(MgNb)0-PbTiO(PMN-PT).3. The piezoelectric structure of claim 2 , the crystal has miller indices <011>.4. The piezoelectric structure of claim 3 , the crystal possesses piezoelectric coefficient dof between about 1 pm/V and about 2500 pm/V and piezoelectric coefficient dof between about −1 pm/V and −3500 pm/V.5. The piezoelectric structure of claim 4 , the single crystal is disk-shaped.6. The piezoelectric structure of claim 5 , the disk-shaped single crystal has a diameter of between about 10 μm and about 200 μm and a thickness of between about 1 μm and about 10 μm.7. The piezoelectric structure of claim 1 , further comprising one or more anchors disposed i) centr-axially coupled to one of the first or second electrodes; ii) radially about the perimeter; or iii) a ...

Baw resonator having lateral energy confinement and methods of fabrication thereof

Embodiments of a Bulk Acoustic Wave (BAW) resonator in which an outer region of the BAW resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the BAW resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (T PA ). The BAW resonator also includes a material on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator. The additional material has a thickness that is n times the thickness (T PA ) of the passivation layer.

STACKED CERAMIC RESONATOR RADIO FREQUENCY FILTER FOR WIRELESS COMMUNICATIONS

A ceramic resonator radio frequency filter includes a printed circuit board, one or more first coaxial resonators disposed on the printed circuit board, and one or more second coaxial resonators disposed over the one or more first coaxial resonators so that the one or more first coaxial resonators and one or more second coaxial resonators are arranged in a stacked configuration. The one or more first coaxial resonators and second coaxial resonators electrically connected to the printed circuit board. 1. (canceled)2. A ceramic resonator radio frequency filter comprising:a first plurality of coaxial resonators arranged in a first row, each of the first plurality of coaxial resonators extending axially in a first direction;a second plurality of coaxial resonators arranged in a second row, each of the second plurality of coaxial resonators extending axially in the first direction, the second row disposed over the first row so that the second plurality of coaxial resonators align with the first plurality of coaxial resonators; anda printed circuit board extending along a plane transverse to the first direction, the first plurality and second plurality of coaxial resonators electrically connected to the printed circuit board.3. The filter of wherein the first plurality of coaxial resonators are disposed on a support structure extending along a plane parallel to the first direction.4. The filter of wherein the support structure is a second printed circuit board.5. The filter of wherein the second printed circuit board comprises a plurality of strip pads onto which the first plurality of coaxial resonators are disposed.6. The filter of wherein the first plurality of coaxial resonators are soldered to the strip pads.7. The filter of wherein the printed circuit board is coupled to the support structure.8. The filter of wherein the printed circuit board is soldered to the second printed circuit board.9. The filter of wherein the first and second plurality of coaxial resonators ...

BULK-ACOUSTIC WAVE RESONATOR

A bulk-acoustic wave resonator includes: a substrate; a membrane layer forming a cavity with the substrate; a lower electrode disposed on the membrane layer; an insertion layer disposed to cover at least a portion of the lower electrode; a piezoelectric layer disposed on the lower electrode to cover the insertion layer; and an upper electrode at least partially disposed on the piezoelectric layer, wherein the upper electrode includes a reflection groove disposed on the insertion layer. 1. A bulk-acoustic wave resonator , comprising:a substrate;a membrane layer forming a cavity with the substrate;a lower electrode disposed on the membrane layer;an insertion layer disposed to cover at least a portion of the lower electrode;a piezoelectric layer disposed on the lower electrode to cover the insertion layer; andan upper electrode at least partially disposed on the piezoelectric layer,wherein the upper electrode comprises a reflection groove disposed on the insertion layer.2. The bulk-acoustic wave resonator according to claim 1 , wherein an end of the upper electrode disposed in an active region in which the lower electrode claim 1 , the piezoelectric layer claim 1 , and the upper electrode overlap is disposed on the insertion layer.3. The bulk-acoustic wave resonator according to claim 2 , wherein the end of the upper electrode disposed in the active region claim 2 , and the reflection groove are connected to form a closed and curved shape.4. The bulk-acoustic wave resonator according to claim 1 , wherein an end of the reflection groove is disposed in a position higher than a position of an inclined surface of the insertion layer.5. The bulk-acoustic wave resonator according to claim 1 , further comprising a protection layer claim 1 , wherein at least a portion of the protection layer is disposed in a position higher than a position of the upper electrode.6. The bulk-acoustic wave resonator according to claim 1 , further comprising an etching prevention portion disposed ...

Integration method and integration structure for control circuit and bulk acoustic wave filter

The present disclosure provides an integration method and integration structure for a control circuit and a Bulk Acoustic Wave (BAW) filter. The integration method includes: providing a base, the base being provided with a control circuit: forming a first cavity on the base; providing a BAW resonating structure, an input electrode and an output electrode being arranged on a surface of the BAW resonating structure, and the BAW resonating structure including a second cavity; facing the surface of the BAW resonating structure towards the base, such that the BAW resonating structure is bonded to the base and seals the first cavity; and electrically connecting the control circuit to the input electrode and the output electrode. The present disclosure implements the control of the control circuit on the BAW filter by forming the control circuit and the cavity, required by the BAW filter, on the base, and then mounting the existing BAW resonating structure in the cavity, and thus may avoid the problems of the complex electrical connection process, large insertion loss and the like due to a fact that the existing BAW filter is integrated to the Printed Circuit Board (PCB) as a discrete device, has the high level of integration, and reduces the process cost.

PIEZOELECTRIC THIN FILM RESONATOR, FILTER, AND MULTIPLEXER

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and a wiring layer located on the upper electrode, the wiring layer having a thickness equal to or greater than 0.8 μm and equal to or less than 3.0 μm, at least a part of the wiring layer overlapping in plan view with a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, a distance between an outline of the resonance region and an edge of a lower surface located within the resonance region and farthest from the outline being greater than 0 μm and less than 2 μm. 1. A piezoelectric thin film resonator comprising:a substrate;a piezoelectric film located on the substrate;a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; anda wiring layer located on the upper electrode, the wiring layer having a thickness equal to or greater than 0.8 μm and equal to or less than 3.0 μm, at least a part of the wiring layer overlapping in plan view with a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, a distance between an outline of the resonance region and an edge of a lower surface of the wiring layer located within the resonance region and farthest from the outline being greater than 0 μm and less than 2 μm.2. The piezoelectric thin film resonator according to claim 1 , whereinthe wiring layer includes an adhesion layer located on the upper electrode, and a low-resistivity layer located on the adhesion layer and made of a material with a lower resistivity than the adhesion layer, andthe low-resistivity layer has a thickness equal to or greater than 0.8 μm and equal to or less than 3.0 μm.3. The piezoelectric thin film resonator according to claim 2 , whereinthe low-resistivity layer ...

AT-CUT CRYSTAL ELEMENT AND CRYSTAL RESONATOR

An AT-cut crystal element is provided for reducing unnecessary vibration and for improving impedance of a resonator. Two side surfaces intersecting with a Z′-axis of a crystallographic axis of crystal are constituted of three surfaces of a first surface as an m-surface of quartz crystal, a second surface that intersects with the first surface and is other than the m-surface, and a third surface that intersects with the second surface and is other than the m-surface. Moreover, the second surface is a surface corresponding to a surface obtained by rotating a principal surface of the AT-cut crystal element by −74±3° having an X-axis of crystal as a rotation axis, and the third surface is a surface corresponding to a surface obtained by rotating the principal surface by −56±3° having the X-axis of the crystal as the rotation axis. 1. An AT-cut crystal element , comprising:side surfaces that intersect with a Z′-axis of a crystallographic axis of crystal, the first surface being an m-surface of a quartz crystal,', 'the second surface intersecting with the first surface and being other than the m-surface,', 'the third surface intersecting with the second surface and being other than the m-surface., 'at least one side surface of the side surfaces being constituted of three surfaces of a first surface, a second surface, and a third surface, wherein'}2. The AT-cut crystal element according to claim 1 , whereinthe second surface is a surface corresponding to a surface obtained by rotating an X-Z′-surface which is a principle surface of the AT-cut crystal element indicated by a crystallographic axis of the crystal by −74±5° having an X-axis of the crystal as a rotation axis, andthe third surface is a surface corresponding to a surface obtained by rotating the principal surface by −56±5° having the X-axis of the crystal as the rotation axis.3. The AT-cut crystal element according to claim 1 , whereinthe second surface is a surface corresponding to a surface obtained by rotating ...

Bulk acoustic filter device and method of manufacturing the same

A bulk acoustic filter device includes: a substrate including a through hole formed by a first recess and a second recess adjacent to the first recess; a membrane layer forming a cavity with the substrate; a filter including a lower electrode disposed on the membrane layer, a piezoelectric layer disposed to cover a portion of the lower electrode, and an upper electrode formed to cover a portion of the piezoelectric layer; and an electrode connecting member disposed in the substrate, and connected to either one of the lower electrode and the upper electrode, wherein the electrode connecting member includes an insertion electrode disposed in the first recess, and a via electrode connected to the insertion electrode, and disposed on an inner peripheral surface of the second recess and a surface of the substrate.

MULTI-PORT FILTER USING TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS

Filter devices and methods are disclosed. A single-crystal piezoelectric plate is attached to substrate, portions of the piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate. A conductor pattern formed on the piezoelectric plate defines a low band filter including low band shunt resonators and low band series resonators and a high band filter including high band shunt resonators and high band series resonators. Interleaved fingers of interdigital transducers (IDTs) of the low band shunt resonators are disposed on respective diaphragms having a first thickness, interleaved fingers of IDTs of the high band series resonators are disposed on respective diaphragms having a second thickness less than the first thickness, and interleaved fingers of IDTs of the low band series resonators and the high band shunt resonators are disposed on respective diaphragms having thicknesses intermediate the first thickness and the second thickness. 1. A filter device , comprising:a substrate having a surface;a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate, portions of the single-crystal piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate; anda conductor pattern formed on the front surface, the conductor pattern defining a low band filter including one or more low band shunt resonators and one or more low band series resonators and a high band filter including one or more high band shunt resonators and one or more high band series resonators, wherein{'b': '1', 'interleaved fingers of interdigital transducers (IDTs) of the one or more low band shunt resonators are disposed on respective diaphragms having a first thickness ts,'}{'b': 2', '1, 'interleaved fingers of IDTs of the one or more high band series resonators are disposed on respective diaphragms having a second thickness ts less than ts, and'}{'b': 1', '2, ' ...

CRYSTAL UNIT

A crystal unit includes an AT-cut crystal element, excitation electrodes, extraction electrodes. The AT-cut crystal element has an approximately rectangular planar shape. The excitation electrodes are disposed on front and back of principal surfaces of the AT-cut crystal element. The extraction electrodes are extended from the excitation electrodes to a side of one side of the AT-cut crystal element via a side surface of the AT-cut crystal element. Assuming that an extraction angle of the extraction electrode from the principal surface to the side surface is defined as an angle θ with respect to an X-axis of a crystallographic axis of a crystal, the angle θ is equal to or greater than 59 degrees and equal to or less than 87 degrees. 1. A crystal unit , comprising:an AT-cut crystal element, having a planar shape which is approximately a rectangular shape,excitation electrodes, disposed on front and back of principal surfaces of the AT-cut crystal element; andextraction electrodes, extended from the excitation electrodes to a side of one side of the AT-cut crystal element via a side surface of the AT-cut crystal element, whereinassuming that an extraction angle of the extraction electrode from the principal surface to the side surface is defined as an angle θ with respect to an X-axis of a crystallographic axis of a crystal of the AT-cut crystal element, the angle θ is equal to or greater than 59 degrees and equal to or less than 87 degrees.2. The crystal unit according to claim 1 , whereinangle θ is equal to or greater than 62 degrees and equal to or less than 75 degrees.3. The crystal unit according to claim 1 , whereinthe angle θ is equal to or greater than 64 degrees and equal to or less than 74 degrees.4. The crystal unit according to claim 1 , whereinthe side surface is an inclined portion inclined such that the AT-cut crystal element decrease in thickness to an end of the AT-cut crystal element along a Z′-axis of the crystallographic axis of the crystal, the ...

CRYSTAL UNIT

A crystal unit includes an AT-cut crystal element and a container. The AT-cut crystal element has an approximately rectangular planar shape. The AT-cut crystal element includes a first inclined portion, second inclined portions, and a first secured portion. The first inclined portion is inclined such that the crystal element decreases in thickness from a proximity of the first side to the first side. The second inclined portions are disposed on respective both ends of the first side, the second inclined portions being formed integrally with the first inclined portion. The second inclined portions are inclined gentler than the first inclined portion. The first secured portion and a second secured portion are formed integrally with the second inclined portion. The first secured portion and the second secured portion each project out from the first side to outside the crystal element to be used for securing with the securing members. 1. A crystal unit , comprising:an AT-cut crystal element, having a planar shape which is approximately a rectangular shape; anda container, secured to the AT-cut crystal element at a side of a first side as one side of the rectangular shape by a securing member, a first inclined portion, inclined such that the AT-cut crystal element decreases in thickness from a proximity of the first side to the first side;', 'second inclined portions, disposed on respective both ends of the first side, the second inclined portions being formed integrally with the first inclined portion, the second inclined portions being inclined gentler than the first inclined portion; and', 'a first secured portion and a second secured portion, formed integrally with the second inclined portions, and the first secured portion and the second secured portion each projecting out in a projecting direction which is from the first side to an outside the AT-cut crystal element to be used for securing with the securing member., 'wherein the AT-cut crystal element includes2. ...

ACOUSTIC RESONATOR AND METHOD OF MANUFACTURING THE SAME

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part. 1. An acoustic resonator comprising:a resonating part comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; anda plurality of seed layers disposed on one side of the resonating part.2. The acoustic resonator of claim 1 , further comprising a substrate disposed on the opposite side of the resonating part from the plurality of seed layers.3. The acoustic resonator of claim 2 , wherein an air gap is disposed between the substrate and the plurality of seed layers.4. The acoustic resonator of claim 2 , wherein the resonating part further comprises a protection layer.5. The acoustic resonator of claim 2 , wherein a membrane is interposed between the substrate and the plurality of seed layers claim 2 , andan air gap is disposed between the substrate and the membrane.6. The acoustic resonator of claim 5 , wherein the membrane comprises a plurality of membrane layers claim 5 , andat least one membrane layer of the plurality of membrane layers is an etching stopper.7. The acoustic resonator of claim 1 , wherein the plurality of seed layers comprise a first seed layer and a second seed layer claim 1 ,the first seed layer comprises a material having the same crystalline system as a material of the piezoelectric layer, andthe second seed layer comprises a material having the same unit cell geometry as a material of the first seed layer.8. The acoustic resonator of claim 7 , wherein a thickness of the first seed layer or the second seed layer is within a range of 10 Å to 1 claim 7 ,000 Å.9. The acoustic resonator of claim 7 , wherein the piezoelectric layer claim 7 , the first seed layer claim 7 , and the second seed layer ...

Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes

Acoustic resonators and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate. A back surface of the piezoelectric plate is attached to the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern including an interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on the diaphragm. A front-side dielectric layer is formed on the front surface of the piezoelectric plate between, but not over, the IDT fingers. A back-side dielectric layer is formed on a back surface of the diaphragm. Thicknesses of the IDT fingers and the front-side dielectric layer are substantially equal. An acoustic impedance Zm of the IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8Zm≤Zfd≤1.25Zm.

BULK ACOUSTIC RESONATOR AND FILTER DEVICE

A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer. 1. A bulk acoustic resonator , comprising:a substrate;a first electrode disposed on the substrate;a piezoelectric layer disposed to cover at least a portion of the first electrode;a second electrode disposed to cover at least a portion of the piezoelectric layer; andan insertion layer disposed below a partial region of the piezoelectric layer,wherein a thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region, andwherein an angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.2. The bulk acoustic resonator of claim 1 , wherein a width of the insertion layer is 20 μm or less.3. The bulk acoustic resonator of claim 1 , wherein the angle of inclination of the internal side surface of the insertion layer is 15° to 25°.4. The bulk acoustic resonator of claim 1 , wherein the angle of inclination of the internal side surface of the insertion layer is greater than the angle of inclination of the external side surface of the insertion layer.5. The bulk acoustic resonator of claim 1 , wherein ...

LOADED RESONATORS FOR ADJUSTING FREQUENCY RESPONSE OF ACOUSTIC WAVE RESONATORS

An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigitated input electrodes and output electrodes located on a top surface of a piezoelectric layer and an counter-electrode on the bottom surface of the piezoelectric layer. Each of the first and the second resonators includes a resonator electrode on the top surface of the piezoelectric layer and a resonator counter-electrode on the bottom surface of the piezoelectric layer. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency that is different from the first frequency. 120-. (canceled)21. An acoustic wave filter device comprising:an acoustic wave filter element comprising input electrodes and output electrodes located on a top surface of a piezoelectric layer and a counter-electrode on a bottom surface of the piezoelectric layer;a first resonator coupled to the acoustic wave filter element and comprising a first resonator electrode on the top surface of the piezoelectric layer and a first resonator counter-electrode on the bottom surface of the piezoelectric layer, the first resonator having a first notch in resonator impedance at a first resonance frequency; anda second resonator coupled to the acoustic wave filter element and comprising a second resonator electrode on the top surface of the piezoelectric layer, a second resonator counter-electrode on the bottom surface of the piezoelectric layer, wherein the second resonator is loaded with a first mass loading layer such that the second resonator has a second notch in resonator impedance at a second resonance frequency that is different from the first resonance ...

RESONANCE APPARATUS FOR PROCESSING ELECTRICAL LOSS USING CONDUCTIVE MATERIAL AND METHOD FOR MANUFACTURING THE SAME

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode. 1. A film bulk acoustic filter comprising:plural resonators, including a first resonator and a second resonator; andan electrode connection unit configured to connect an upper electrode of the first resonator to a lower electrode of the second resonator.2. The film bulk acoustic filter of claim 1 , further comprising:a grounding unit configured to connect one of a first upper electrode and a first lower electrode of at least one of the plural resonators to ground.3. The film bulk acoustic filter of claim 2 , further comprising:a conductive layer formed on the grounding unit.4. The film bulk acoustic filter of claim 3 , wherein the conductive layer is formed by vapor depositing a conductive material.5. The film bulk acoustic filter of claim 2 , wherein the grounding unit is formed by vapor depositing a conductive material on a substrate.6. The film bulk acoustic filter of claim 1 , further comprising:a pad configured to connect at least one of a second upper electrode and a second lower electrode of one or more of the plural resonators to an external terminal.7. The film bulk acoustic filter of claim 6 , further comprising:a conductive layer formed on the pad.8. The film bulk acoustic filter of claim 6 , wherein the pad is formed by vapor depositing a conductive material on a partial region of a substrate.9. The film bulk acoustic filter of claim 1 , wherein the electrode connection unit is formed by vapor depositing a conductive material.10. The film bulk acoustic filter of claim 9 , ...

Resonance apparatus for processing electrical loss using conductive material and method for manufacturing the same

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

PISTON MODE LAMB WAVE RESONATORS

Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode. 1. A piston mode Lamb wave resonator with transverse mode suppression , the piston mode Lamb wave resonator comprising:a piezoelectric layer; andan interdigital transducer on the piezoelectric layer, the piston mode Lamb wave resonator having an active region and a border region, the border region having a first velocity with a lower magnitude than a second velocity of the active region, the border region configured to suppress a transverse mode, and the piston mode Lamb wave resonator configured to generate a Lamb wave.2. The piston mode Lamb wave resonator of wherein the piezoelectric layer is an aluminum nitride layer.3. The piston mode Lamb wave resonator of wherein the interdigital transducer includes a bus bar and a plurality of fingers extending from the bus bar claim 1 , each of the fingers having an end portion opposite the bus bar.4. The piston mode Lamb wave resonator of wherein the end portions of the fingers including metal that is wider than other portions of the respective fingers.5. The piston mode Lamb wave resonator of further comprising an oxide over the end portions of the fingers.6. The piston mode Lamb wave resonator of further comprising silicon nitride over a portion of the interdigital transducer claim 3 , the end portions being free from the silicon nitride.7. The piston mode Lamb wave resonator of wherein the interdigital transducer includes a second bus bar having a lower metal coverage ratio adjacent the end portions than in other portions of the second bus bar.8. The piston mode Lamb wave resonator of ...

Acoustic resonator comprising vertically extended acoustic cavity

An acoustic resonator device includes a substrate, a bottom electrode, a piezoelectric layer, and a top electrode. The top electrode includes a first top comb electrode having a first top bus bar and first top fingers extending in a first direction from the first top bus bar, and a second top comb electrode having a second top bus bar and second top fingers extending in a second direction from the second top bus bar, substantially opposite to the first direction, such that the first and second top fingers form a top interleaving pattern. One of the bottom and top electrodes is a composite electrode having a thickness of approximately λ/2, where λ is a wavelength corresponding to thickness extensional resonance frequency of the acoustic resonator. The piezoelectric layer and one of the bottom the electrodes that is not the composite electrode have a combined thickness of approximately λ/2.

METHOD OF MANUFACTURING PIEZOELECTRIC RESONATOR UNIT

A method of manufacturing a piezoelectric resonator unit that includes mounting a piezoelectric resonator on a base member using a conductive adhesive, keeping the piezoelectric resonator in an environment having a temperature and a humidity higher than those of a surrounding region for a predetermined time, performing frequency adjustment of the piezoelectric resonator by etching using an ion beam, and joining a lid member to the base member using a joining material such that the piezoelectric resonator is hermetically sealed between the lid member and the base member. 1. A method of manufacturing a piezoelectric resonator unit , the method comprising:(a) mounting a piezoelectric resonator on a base member using a conductive adhesive;(b) keeping the piezoelectric resonator mounted on the base member in an environment having a temperature and a humidity higher than that of a surrounding region for a predetermined time;(c) performing frequency adjustment of the piezoelectric resonator by etching using an ion beam; and(d) joining a lid member to the base member using a joining material such that the piezoelectric resonator is hermetically sealed between the lid member and the base member.2. The method of manufacturing a piezoelectric resonator unit according to claim 1 , wherein the temperature is in a range of 40° C. to 121° C. claim 1 , the humidity is in a range of 70% RH to 95% RH claim 1 , and the predetermined time is in a range of 30 minutes to 168 hours.3. The method of manufacturing a piezoelectric2. or unit according to claim 2 , wherein the temperature is in a range of 92° C. to 98° C. claim 2 , the humidity is in a range of 82% RH to 88% RH claim 2 , and the predetermined time is in a range of 30 minutes to 24 hours.4. The method of manufacturing a piezoelectric resonator unit according to claim 2 , wherein the base member includes a connection electrode formed on an upper surface on which the piezoelectric resonator is mounted claim 2 , and an extended ...

BULK ACOUSTIC WAVE DEVICE WITH MULTI-GRADIENT RAISED FRAME

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced. The multi-gradient raised frame structure is tapered on opposing sides. 1. A bulk acoustic wave device with a multi-gradient raised frame , the bulk acoustic wave device comprising:a first electrode;a second electrode;a piezoelectric layer positioned between the first electrode and the second electrode; anda multi-gradient raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced, the multi-gradient raised frame structure being tapered on opposing sides, and the bulk acoustic wave device being configured to generate a bulk acoustic wave.2. The bulk acoustic wave device of wherein the multi-gradient raised frame structure surrounds the main acoustically active region of the bulk acoustic wave device in plan view.3. The bulk acoustic wave device of wherein the multi-gradient raised frame structure has a non-gradient portion between two gradient portions.4. The bulk acoustic wave device of wherein the multi-gradient raised frame structure consists essentially of gradient portions.5. The bulk acoustic wave device of wherein the bulk acoustic wave device is a film bulk acoustic resonator.6. The bulk acoustic wave device of wherein the multi-gradient raised frame structure includes a plurality of raised frame layers.7. The bulk acoustic wave device of wherein the plurality of raised frame layers include a first raised frame layer and a second raised frame layer claim 6 , and the second raised frame layer extends beyond the first raised frame layer ...

MULTI-GRADIENT RAISED FRAME IN BULK ACOUSTIC WAVE DEVICE

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure. The multi-gradient raised frame structure includes a first raised frame layer and a second raised frame layer. The second raised frame layer extends beyond the first raised frame layer. The second raised frame layer is tapered on opposing sides. 1. A bulk acoustic wave device with a multi-gradient raised frame , the bulk acoustic wave device comprising:a first electrode;a second electrode;a piezoelectric layer positioned between the first electrode and the second electrode; anda multi-gradient raised frame structure including a first raised frame layer and a second raised frame layer, the second raised frame layer extending beyond the first raised frame layer, and the second raised frame layer being tapered on opposing sides, and the bulk acoustic wave device being configured to generate a bulk acoustic wave.2. The bulk acoustic wave device of wherein the second raised frame layer extends beyond the first raised frame layer on the opposing sides claim 1 , and the opposing sides include a first side toward a main acoustically active region of the bulk acoustic wave device and a second side away from the main acoustically active region.3. The bulk acoustic wave device of wherein the first raised frame layer has a lower acoustic impedance than the piezoelectric layer.4. The bulk acoustic wave device of wherein the first raised frame layer includes an oxide claim 1 , and the second raised frame layer includes a metal.5. The bulk acoustic wave device of wherein the second raised frame layer incudes one or more of ruthenium claim 4 , molybdenum claim 4 , tungsten claim 4 , platinum claim 4 , or iridium.6. The bulk acoustic wave device of wherein the first raised ...

ACOUSTIC WAVE DEVICE, WAFER, AND MANUFACTURING METHOD OF WAFER

An acoustic wave device includes a support substrate having an uneven surface, a piezoelectric layer provided on the uneven surface of the support substrate, an electrode that excites an acoustic wave in the piezoelectric layer, and an insulating layer that is provided between the uneven surface of the support substrate and the piezoelectric layer, and has an air gap located in a recess part of the uneven surface. 1. An acoustic wave device comprising:a support substrate having an uneven surface;a piezoelectric layer provided on the uneven surface of the support substrate;an electrode that excites an acoustic wave in the piezoelectric layer; andan insulating layer that is provided between the uneven surface of the support substrate and the piezoelectric layer, and has an air gap located in a recess part of the uneven surface.2. The acoustic wave device according to claim 1 , wherein a height of the air gap is equal to or greater than 0.2 times an average height of unevenness of the uneven surface.3. The acoustic wave device according to claim 1 , wherein a width of the air gap is equal to or greater than 0.01 times an average period of unevenness of the uneven surface and equal to or less than 0.2 times the average period of the unevenness of the uneven surface claim 1 , the width being a largest length in a short direction when the air gap is viewed in a plan view.4. The acoustic wave device according to claim 1 ,wherein the uneven surface has protruding portions regularly arranged, andwherein the air gap is provided in plural, and a regular interval between the air gaps is substantially equal to a regular interval between the protruding portions.5. The acoustic wave device according to claim 1 ,wherein the uneven surface has recessed portions regularly arranged, andwherein the air gap is provided in plural, and a regular interval between the air gaps is substantially equal to a regular interval between the recessed portions.6. The acoustic wave device according to ...

FILM BULK ACOUSTIC RESONATOR HAVING SUPPRESSED LATERAL MODE

Film bulk acoustic resonator having suppressed lateral mode. In some embodiments, a film bulk acoustic resonator can include a piezoelectric layer having a first side and a second side, a first electrode having a first lateral shape implemented on the first side of the piezoelectric layer, and a second electrode having a second lateral shape implemented on the second side of the piezoelectric layer. The first and second lateral shapes can be selected and arranged to provide a resonator shape defined by an outline of an overlap of the first and second electrodes. The resonator shape can include N curved sections joined by N vertices of an N-sided polygon. The resonator shape can be configured to have no axis of symmetry. 1. A bulk acoustic resonator comprising:a piezoelectric layer having a first side and a second side; anda first electrode having a first lateral shape implemented on the first side of the piezoelectric layer; anda second electrode having a second lateral shape implemented on the second side of the piezoelectric layer, the first and second lateral shapes selected and arranged to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, the resonator shape including N curved sections joined by N vertices of an N-sided polygon, the resonator shape configured to have no axis of symmetry.2. The bulk acoustic resonator of wherein the quantity N is an integer greater or equal to 4.3. The bulk acoustic resonator of wherein the quantity N is equal to 5.4. The bulk acoustic resonator of wherein each of the N curved sections is a smooth curve.5. The bulk acoustic resonator of wherein each of the N vertices is defined by joining of two neighboring smooth curves claim 4 , such that the two neighboring smooth curves combined is not a smooth curve due to the respective vertex.6. The bulk acoustic resonator of wherein each of the N vertices is a sharp point between the respective neighboring smooth curves.7. The bulk acoustic ...

WIDE BANDWIDTH TEMPERATURE-COMPENSATED TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal lithium niobate (LN) plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the LN plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate such that interleaved fingers of the IDT are disposed on the diaphragm. A half-lambda dielectric layer is formed on one of the front surface and back surface of the diaphragm. Euler angles of the LN plate are [0°, β, 0°], where 20°≤β≤25°. 1. An acoustic resonator device comprising:a substrate having a surface;a lithium niobate (LN) plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the LN plate forming a diaphragm that spans a cavity in the substrate;an interdigital transducer (IDT) formed on the front surface of the LN plate such that interleaved fingers of the IDT are disposed on the diaphragm, the LN plate and the IDT configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode in the diaphragm; anda half-lambda dielectric layer formed on one of the front surface and the back surface of the diaphragm, whereinEuler angles of the LN plate are [0°, β, 0°], where 20°≤β≤25°.2. The acoustic resonator device of claim 1 , whereinEuler angles of the LN plate are substantially equal to [0°, 23°, 0°].3. The acoustic resonator device of claim 1 , wherein{'sub': '2', 'the dielectric layer is SiO, and'} {'br': None, '0.875ts≤td≤1.25ts.'}, 'a thickness is of the LN plate and a thickness td of the dielectric layer are related as follows4. The acoustic resonator device of claim 1 , wherein{'sub': 2', '3', '4', '2', '3, 'the dielectric layer is one or more of SiO, SiN, AlO, and AlN.'}5. The acoustic resonator device of claim 1 , wherein the LN plate and ...

PIEZOELECTRIC RESONATOR UNIT AND METHOD OF MANUFACTURING THE SAME

A piezoelectric resonator unit that includes a piezoelectric resonator, a substrate including a protruding portion, and a cap joined to the protruding portion. The piezoelectric resonator unit has a first relation of WTwWT where, in a long-side sectional view, w is a width of an inside of an opening in the cap, T is a width of the protruding portion, and W is a width of the upper surface of the substrate between parts of the protruding portion; and has a second relation of WTwWT where, in a short-side sectional view, w is a width of the inside of the opening in the cap, T is a width of the protruding portion, and W is a width of the upper surface of the substrate between parts of the protruding portion. 1. A piezoelectric resonator unit comprising:a piezoelectric resonator;a rectangular substrate that has a long-side direction and a short-side direction in a plan view thereof and has an upper surface on which the piezoelectric resonator is mounted, the substrate including a protruding portion along an entire perimeter of the upper surface so as to surround the piezoelectric resonator in the plan view, a height of the protruding portion from the upper surface of the substrate is smaller than a height of an upper surface of the piezoelectric resonator from the upper surface of the substrate; anda cap that includes a flat plate portion facing the upper surface of the substrate and an edge portion protruding from the flat plate portion toward the upper surface of the substrate so as to define an opening, the edge portion being joined to the protruding portion of the substrate via a joining material so as to hermetically seal the piezoelectric resonator between the cap and the substrate, {'br': None, 'i': W', 'T', 'w', 'W', 'T, '1+1≦1<1+21,'}, 'wherein the piezoelectric resonator unit has a first relation of'}{'b': 1', '1', '1, 'where, in a sectional view of the substrate in the long-side direction, w is a width of an inside of the opening in the cap, T is a width of the ...

TWO-STAGE LATERAL BULK ACOUSTIC WAVE FILTER

Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack. 1. An acoustic wave filter device comprising:an acoustic reflector comprising one or more layers;an intermediary layer providing or on a topmost layer of the acoustic reflector, wherein the intermediary layer has a first region and a second region, the first region having a first layer thickness and the second region having a second layer thickness different from the first layer thickness; a first counter electrode on the first region of the intermediary layer,', 'a first piezoelectric layer on the first counter electrode, and', 'a first input electrode and a first output electrode on the first piezoelectric layer, the first input electrode and the first output electrode each having a first electrode thickness and extending substantially in parallel and separated by a first gap; and, 'a first multilayer stack on the acoustic reflector comprising'} a second counter electrode on the second region of the intermediary layer,', 'a second piezoelectric layer on the second counter electrode, and', 'a second input electrode and a second output electrode on the second piezoelectric layer, the ...

RECESS FRAME STRUCTURE FOR A BULK ACOUSTIC WAVE RESONATOR

A film bulk acoustic wave resonator (FBAR) includes a piezoelectric film disposed in a central region defining a main active domain in which a main acoustic wave is generated during operation, and in recessed frame regions disposed laterally on opposite sides of the central region. The piezoelectric film disposed in the recessed frame regions includes a greater concentration of defects than a concentration of defects in the piezoelectric film disposed in the central region. 1. A film bulk acoustic wave resonator (FBAR) comprising a piezoelectric film disposed in a central region defining a main active domain in which a main acoustic wave is generated during operation , and in recessed frame regions disposed laterally on opposite sides of the central region , the piezoelectric film disposed in the recessed frame regions including a greater concentration of defects than a concentration of defects in the piezoelectric film disposed in the central region.2. The FBAR of further comprising a top electrode disposed on a top surface of the piezoelectric film and a bottom electrode disposed on a bottom surface of the piezoelectric film claim 1 , a vertical distance between the top electrode and the bottom electrode in the central region being greater than the vertical distance between the top electrode and the bottom electrode in the recessed frame regions.3. The FBAR of further comprising raised frame regions disposed laterally on opposite sides of the recessed frame regions from the central region claim 2 , the piezoelectric film extending laterally through the recessed frame regions claim 2 , a thickness of the top electrode in the raised frame regions being greater than a thickness of the top electrode in the central region.4. The FBAR of wherein an acoustic velocity in the piezoelectric film in the recessed frame regions differs from an acoustic velocity in the piezoelectric film in the raised frame regions.5. The FBAR of wherein the difference in acoustic velocity in ...

LOADED RESONATORS FOR ADJUSTING FREQUENCY RESPONSE OF ACOUSTIC WAVE RESONATORS

An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer and an counter-electrode on the bottom surface of the piezoelectric layer. Each of the first and the second resonators includes a resonator electrode on the top surface of the piezoelectric layer and a resonator counter-electrode on the bottom surface of the piezoelectric layer. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency that is different from the first frequency. 1. An acoustic wave filter device comprising:an acoustic wave filter element comprising interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer and a counter-electrode on a bottom surface of the piezoelectric layer;a first resonator coupled to the acoustic wave filter element and comprising a first resonator electrode on the top surface of the piezoelectric layer and a first resonator counter-electrode on the bottom surface of the piezoelectric layer, the first resonator having a first notch in resonator impedance at a first frequency; anda second resonator coupled to the acoustic wave filter element and comprising a second resonator electrode on the top surface of the piezoelectric layer, a second resonator counter-electrode on the bottom surface of the piezoelectric layer, and a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency that is different from the first frequency.2. The device of claim 1 , wherein the ...

METHOD FOR PRODUCING ACOUSTIC RESONATOR AND FILTER WITH ELECTRODE HAVING ZIG-ZAG EDGE

Method of designing a BAW resonator and filter and the resulting devices are provided. Embodiments include patterning a bottom electrode of a resonator, patterning a top electrode of the resonator, and intersecting area of the resonator, wherein the effective area includes a closed-loop contour line including a pulse function pattern with predefined amplitude, period and a number of repetitions of pulses along the closed-loop contour line. 1. A method comprising:defining a pulse function to create a contour line of a bulk acoustic wave (BAW) resonator;providing segments of the contour line based on pulse function amplitude, period and contour length; andconnecting endpoints of the segments to form a closed-loop contour line enclosing an effective area of the BAW resonator.2. The method according to claim 1 , further comprising:further defining the pulse function to achieve a target quality (Q) factor of the BAW resonator.3. The method according to claim 1 , further comprising:forming the closed contour line having a zig-zag shaped contour along a perimeter of a bottom electrode, a top electrode or both; orforming the closed contour line having a non-parallel curve shaped contour with sinusoidal functions along a perimeter of the bottom electrode, the top electrode or both.4. The method according to claim 3 , comprising: forming the zig-zag shaped contour having triangular functions along the perimeter of the bottom electrode claim 3 , the top electrode or both.5. The method according to claim 4 , further comprising:forming the top and bottom electrodes in a rectangular shape or a regular polygon shape.6. The method according to claim 5 , further comprising:forming an acoustic layer between the top and bottom electrodes.7. The method according to claim 6 , wherein the acoustic layer comprises a piezoelectric material.8. The method according to claim 1 , wherein the BAW resonator comprises a longitudinal-mode BAW resonator.9. The method according to claim 1 , wherein ...

SUBSTRATE PROCESSING AND MEMBRANE RELEASE OF TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR USING A SACRIFICIAL TUB

An acoustic resonator device is formed using a sacrificial layer and a front side etched cavity by forming a recess in a silicon substrate with a trap-rich top layer and filling the recess with sacrificial silicon nitride. A bonding oxide (BOX) layer is formed over the trap-rich layer and the sacrificial silicon nitride filled recess and a piezoelectric plate is bonded to the BOX layer. The sacrificial silicon nitride is then removed to form a cavity by using an etchant introduced through holes in the piezoelectric plate and BOX layer without removing the BOX layer from over the cavity. 1. A method of forming a filter device using a sacrificial layer and a front side etched cavity comprising:forming a recess in a silicon substrate with a trap-rich top layer;filling the recess with sacrificial silicon nitride;forming a bonding oxide (BOX) layer over the trap-rich layer and the sacrificial silicon nitride filled recess;bonding a piezoelectric plate to the BOX layer; andremoving the sacrificial silicon nitride using an etchant introduced through holes in the piezoelectric plate and BOX layer to form a cavity without removing the BOX layer from over the cavity.2. The method of claim 1 , wherein:forming the recess in the silicon substrate includes patterning the top of the trap-rich top layer and front side etching through the trap-rich top layer and into the substrate; andwherein removing the silicon nitride comprises using an isotropic Phosphoric acid etch through the holes to remove the silicon nitride but not the BOX layer.3. The method of claim 1 , wherein removing the silicon nitride includes front side releasing a portion of the piezoelectric plate over the cavity to form a diaphragm spanning the cavity.4. The method of claim 3 , further comprising:forming a conductor pattern on a front surface of the piezoelectric plate, wherein the conductor pattern includes an interdigital transducer (IDT) with interleaved fingers disposed on the diaphragm over the cavity; ...

LITHIUM NIOBATE OR LITHIUM TANTALATE FBAR STRUCTURE AND FABRICATING METHOD THEREOF

A film bulk acoustic resonator (FBAR) structure includes, a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including lithium niobate or lithium tantalate, a bottom electrode disposed below the piezoelectric layer, and a top electrode disposed above the piezoelectric layer. Portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack. The FBAR structure also includes a cavity disposed below the piezoelectric stack. A projection of the piezoelectric stack is located within the cavity. 1. A film bulk acoustic resonator (FBAR) structure , comprising:a bottom cap wafer;a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including lithium niobate or lithium tantalate;a bottom electrode disposed below the piezoelectric layer;a top electrode disposed above the piezoelectric layer, wherein portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack; anda cavity disposed below the piezoelectric stack;wherein a projection of the piezoelectric stack is located within the cavity.2. The FBAR structure of claim 1 , further comprising:a raised structure disposed along an edge of the top electrode, the raised structure protruding from the top electrode in a direction away from the bottom electrode, ora raised structure disposed along an edge of the bottom electrode, the raised structure protruding from the bottom electrode towards the cavity.3. The FBAR structure of claim 2 , wherein the raised structure includes a conductive material.4. The FBAR structure of claim 1 , further comprising:a boundary layer disposed below the piezoelectric layer, and surrounding the cavity.5. The FBAR structure of claim 4 , wherein the boundary layer includes a non-conductive material.6. The FBAR structure of claim 1 , further comprising:a bonding layer disposed ...

FILM BULK ACOUSTIC RESONATOR STRUCTURE AND FABRICATING METHOD

A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, a bottom electrode disposed below the piezoelectric layer, and a top electrode disposed above the piezoelectric layer. Portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack. The FBAR structure further includes a lower cavity disposed below the piezoelectric stack. A projection of the piezoelectric stack is located within the lower cavity. 1. A film bulk acoustic resonator (FBAR) structure , comprising:a bottom cap wafer;a piezoelectric layer disposed on the bottom cap wafer;a bottom electrode disposed below the piezoelectric layer;a top electrode disposed above the piezoelectric layer, wherein portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack; anda lower cavity disposed below the piezoelectric stack;wherein a projection of the piezoelectric stack is located within the lower cavity.2. The FBAR structure of claim 1 , further comprising a raised structure disposed along an edge of the bottom electrode claim 1 , the raised structure protruding from the bottom electrode towards the lower cavity.3. The FBAR structure of claim 1 , further comprising:a trench surrounding the lower cavity; anda boundary layer disposed within the trench.4. The FBAR structure of claim 3 , further comprising:a sacrificial layer surrounding the trench.5. The FBAR structure of claim 4 , further comprising:a bottom bonding layer disposed below the sacrificial layer,wherein the bottom cap wafer is bonded to the bottom bonding layer.6. The FBAR structure of claim 1 , further comprising:a top passivation layer disposed above the top electrode; anda bottom passivation layer disposed below the bottom electrode.7. The FBAR structure of claim 6 , further comprising:a bottom electrode contact ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC FILTER USING PITCH TO ESTABLISH FREQUENCY SEPARATION BETWEEN RESONATORS

Acoustic filters are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms. The interleaved fingers of all of the plurality of IDTs are substantially aluminum with a common thickness tm, where 0.12 ts≤tm≤0.32 ts. 1. An acoustic filter device comprising:a substrate having a surface;a lithium niobate piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate;a conductor pattern formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms; andone or more dielectric layers deposited over all of the IDTs and the diaphragms, wherein a total deposited thickness of the one or more dielectric layers is the same for all of the plurality of acoustic resonators.2. The device of claim 1 , whereinthe one or more dielectric layers comprises a passivation/tuning layer.3. The device of claim 1 , whereinthe one or more dielectric layers consists of a passivation/tuning layer.4. The device of whereinthe interleaved fingers of all of the plurality of ...

TRANSVERSLY-EXCITED FILM BULK ACOUSTIC RESONATORS AND FILTERS

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a single-crystal piezoelectric plate. A back surface of a supported portion of the piezoelectric plate is attached to a surface of the substrate. A portion of the piezoelectric plate forms a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate. The IDT includes first and second busbars, and interleaved fingers extending alternately from the first and second busbars. Overlapping portions of the interleaved fingers are disposed on the diaphragm. At least portions of both the first and second busbars are disposed on the supported portion of the piezoelectric plate. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode within the diaphragm. 1. An acoustic resonator , comprising:a substrate;a single-crystal piezoelectric plate comprising a supported portion and a diaphragm, wherein a back surface of the supported portion is attached to a surface of the substrate and the diaphragm spans a cavity in the substrate;an interdigital transducer (IDT) formed on a front surface of the piezoelectric plate, the IDT comprising a first busbar, a second busbar, and interleaved fingers extending alternately from the first and second busbars, whereinoverlapping portions of the interleaved fingers are disposed on the diaphragm,at least portions of both the first and second busbars are disposed on the supported portion of the piezoelectric plate, andthe piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode within the diaphragm.2. The device of claim 1 , wherein the piezoelectric plate is one of lithium niobate and lithium tantalate.3. The device of claim 2 , wherein the piezoelectric plate is one of Z-cut claim 2 , rotated Z-cut claim 2 ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH SPIRAL INTERDIGITATED TRANSDUCER FINGERS

Acoustic resonator devices, filers, and methods. An acoustic resonator includes a substrate and a piezoelectric plate, a portion of the piezoelectric plate being a diaphragm spanning a cavity in the substrate. A conductor pattern on a front surface of the piezoelectric plate includes interleaved interdigital transducer (IDT) fingers connected alternately to first and second busbars. The interleaved IDT fingers are on the diaphragm, and the interleaved IDT fingers include at least a first pair of interleaved spiral IDT fingers.

FBAR STRUCTURE AND MANUFACTURING METHOD OF SAME

A film bulk acoustic resonator (FBAR) structure includes a top electrode, a piezoelectric layer disposed below the top electrode, a bottom electrode disposed below the piezoelectric layer, a dielectric layer disposed below the bottom electrode, a bonding substrate disposed below the dielectric layer, a bottom cap wafer disposed below the bonding substrate, and a cavity disposed below the bottom electrode and formed by the dielectric layer, the bonding substrate, and the bottom cap wafer.

Bulk Acoustic Wave Resonator having a Central Feed

Example implementations of a bulk acoustic wave resonator having a central feed are disclosed. In an example aspect, a BAW resonator includes a bottom electrode having an upper surface. The BAW resonator also includes a volume of piezoelectric material having an upper surface and a lower surface, which is disposed on the upper surface of the bottom electrode. The BAW resonator further includes a top electrode having a large-surface layer having an upper surface and a lower surface. The lower surface of the large-surface layer is disposed on the upper surface of the volume of piezoelectric material with the large-surface layer overlapping at least a portion of the bottom electrode to form an active region of the BAW resonator. The top electrode also includes a small-surface layer having an upper surface and a lower surface. The lower surface of the small-surface layer is coupled to a portion of the upper surface of the large-surface layer. The small-surface layer couples a central portion of the top electrode to an electrode feed. 1. A resonator comprising: a bottom electrode , a volume of piezoelectric material , and a top electrode , the bottom-electrode small-surface layer coupled to a bottom electrode feed and positioned in a central portion of the bottom electrode; and', 'the bottom-electrode large-surface layer coupled to an upper surface of the bottom-electrode small-surface layer, the bottom-electrode large-surface layer extending laterally beyond the bottom-electrode small-surface layer; and, 'the bottom electrode coupled to a lower surface of the volume of piezoelectric material, the bottom electrode including a bottom-electrode small-surface layer and a bottom-electrode large-surface layer,'} the top-electrode large-surface layer coupled to an upper surface of the volume of piezoelectric material; and', 'the top-electrode small-surface layer coupled to a central portion of an upper surface of the top-electrode large-surface layer, the top-electrode small- ...

Acoustic Resonator with Optimized Outer Perimeter

Example implementations of a bulk acoustic wave resonator with an optimized outer perimeter are disclosed. In an example aspect, a resonator includes a truncated-ellipsoid-shaped active region. The active region includes an outer electrode disposed as a first layer of the active region. The active layer also includes a piezoelectric layer disposed as a second layer of the active region with the piezoelectric layer disposed interior to the outer electrode. The active layer further includes an inner electrode disposed as a third layer of the active region with the inner electrode disposed interior to the piezoelectric layer. 1. A resonator comprising: an outer electrode including a first convex portion along a quadratic surface;', 'a piezoelectric layer including a second convex portion, the second convex portion disposed interior to the first convex portion; and', 'an inner electrode including a third convex portion, the third convex portion disposed interior to the second convex portion; and, 'an active region including an outer electrode feed configured to couple the outer electrode to a first terminal; and', 'an inner electrode feed configured to couple the inner electrode to a second terminal., 'a pedestal coupled to the active region at a connection region, the pedestal including2. The resonator of claim 1 , wherein:the first convex portion has one of a center of curvature or a focus; andthe piezoelectric layer is disposed interior to the first convex portion in a volume between the first convex portion and the one of the center of curvature or the focus.3. The resonator of claim 1 , wherein the quadratic surface includes a truncated ellipsoid.4. The resonator of claim 3 , wherein the truncated ellipsoid includes a truncated surface at the connection region.5. The resonator of claim 1 , wherein the connection region is free of parallel edges.6. The resonator of claim 1 , wherein the outer electrode comprises a frame region circumscribing the connection region ...

Positions of release ports for sacrificial layer etching

A film bulk acoustic wave resonator includes a piezoelectric film disposed over a cavity. The cavity is shaped as partial ellipse including first, second, and third vertices. The film bulk acoustic wave resonator further includes three release ports in positions that minimize etch time to remove all sacrificial material from within the cavity.

BULK-ACOUSTIC WAVE RESONATOR AND METHOD FOR MANUFACTURING THE SAME

A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity. 1. A bulk-acoustic wave resonator , comprising:a substrate including a substrate protection layer;a first layer disposed on the substrate protection layer;a second layer disposed outside of the first layer;a membrane layer forming a cavity with the substrate protection layer and the first layer; anda resonance portion disposed on the membrane layer,wherein either one or both of the substrate protection layer and the membrane layer comprises a protrusion disposed in the cavity.2. The bulk-acoustic wave resonator according to claim 1 , wherein the protrusion comprises a first protrusion portion formed on the substrate protection layer claim 1 , and a second protrusion portion formed on the membrane layer to be opposite to the first protrusion portion.3. The bulk-acoustic wave resonator according to claim 1 , wherein the protrusion comprises a plurality of protrusions that are each disposed to be spaced apart from another.4. The bulk-acoustic wave resonator according to claim 1 , wherein the first layer is formed of a material comprising an oxide or polysilicon.5. The bulk-acoustic wave resonator according to claim 1 , wherein either one or both of the first layer and the second layer are formed of any one selected from materials including an oxide or polysilicon.6. The bulk-acoustic wave resonator according to claim 1 , wherein the first layer is formed of a material to be etched by any one selected from an ...

ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD FOR SAME

An acoustic wave device includes a piezoelectric substrate including an electrode formation surface, and an IDT electrode provided on the electrode formation surface. The IDT electrode includes a close contact layer located on the electrode formation surface, and a main electrode layer located on the close contact layer. The close contact layer includes first and second layers that respectively include first and second lateral surfaces. An area of a surface of the second layer that is in close contact with the main electrode layer is smaller than an area of a surface of the first layer that is in close contact with the piezoelectric substrate. An inclination angle of the second lateral surface is smaller than an inclination angle of the first lateral surface. 1. An acoustic wave device comprising:a piezoelectric substrate including an electrode formation surface; andan IDT electrode provided on the electrode formation surface of the piezoelectric substrate; whereinthe IDT electrode includes a close contact layer located on the electrode formation surface of the piezoelectric substrate, and a main electrode layer located on the close contact layer;the close contact layer includes a first layer in close contact with the piezoelectric substrate, and a second layer in close contact with the main electrode layer;the first layer includes a first lateral surface, and the second layer includes a second lateral surface;at least portions of each of the first and second lateral surfaces are inclined relative to a normal direction of the electrode formation surface, and an area of a surface of the second layer that is in close contact with the main electrode layer is smaller than an area of a surface of the first layer that is in close contact with the piezoelectric substrate; andangles defined by the inclined portions of each of the first and second lateral surfaces with respect to the normal direction of the electrode formation surface are inclination angles of each of the ...

QUARTZ CRYSTAL BLANK AND QUARTZ CRYSTAL RESONATOR UNIT

A rectangular quartz crystal blank having long sides substantially parallel to a Z′ axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a first center region, a second region and a third region that are adjacent to the first region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than the thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than the thickness of the first region, and 12.26≦W/T≦13.02, where W is a length of a short side and T is a thickness. 1. An AT-cut quartz crystal blank comprising:a quartz crystal body that is rectangular in shape in a direction normal to a main surface thereof, the quartz crystal body having a first region including a center of the main surface in the direction normal to the main surface, a second region and a third region that are adjacent to the first region on opposed sides thereof along a long-side direction in which long sides of the quartz crystal body extend, and a fourth region and a fifth region that are adjacent to the first region on opposed sides thereof along a short-side direction in which short sides of the quartz crystal body extend,wherein the long sides of the main surface are substantially parallel to a Z′ axis of the quartz crystal blank,wherein the short sides of the main surface are substantially parallel to an X axis of the quartz crystal blank,wherein a frequency of a main vibration of the quartz crystal blank is in a range of 22.0 MHz to 24.5 MHz,wherein a thickness of the first region is substantially uniform,wherein at least one of (1) a thickness of the second region and a thickness of the third region are smaller than the thickness of the first region, and (2) a thickness of ...

STACKED CERAMIC RESONATOR RADIO FREQUENCY FILTER FOR WIRELESS COMMUNICATIONS

A ceramic resonator radio frequency filter includes a printed circuit board, one or more first coaxial resonators disposed on the printed circuit board, and one or more second coaxial resonators disposed over the one or more first coaxial resonators so that the one or more first coaxial resonators and one or more second coaxial resonators are arranged in a stacked configuration. The one or more first coaxial resonators and second coaxial resonators electrically connected to the printed circuit board. 1. A ceramic resonator radio frequency filter comprising:a printed circuit board;one or more first coaxial resonators disposed on the printed circuit board; andone or more second coaxial resonators disposed over the one or more first coaxial resonators so that the one or more first coaxial resonators and one or more second coaxial resonators are arranged in a stacked configuration, the one or more first coaxial resonators and second coaxial resonators electrically connected to the printed circuit board.2. The filter of wherein the one or more second coaxial resonators are soldered to the one or more first coaxial resonators.3. The filter of further comprising a second printed circuit board that extends generally perpendicular to and couples with the printed circuit board claim 1 , the one or more first and second coaxial resonators electrically connected to the second printed circuit board.4. The filter of wherein the second printed circuit board has a protrusion on a bottom edge thereof configured to extend into an aperture on the printed circuit board to couple and facilitate alignment of the second printed board with the printed circuit board.5. The filter of wherein a bottom edge of the second printed circuit board is soldered to the printed circuit board.6. The filter of further comprising one or more tabs that connect the one or more first and second coaxial resonators with the second printed circuit board claim 1 , the one or more tabs configured to input a radio ...

FILTER DEVICE

A filter device includes a longitudinally coupled resonator elastic wave filter that includes IDT electrodes including low acoustic velocity regions in outer side portions of center regions of the IDT electrodes and high acoustic velocity regions in outer side portions of the low acoustic velocity regions in a direction orthogonal or substantially orthogonal to an elastic wave propagation direction, and defines and functions as a first bandpass filter, and elastic wave resonators that are electrically connected to the longitudinally coupled resonator elastic wave filter. 2. The filter device according to claim 1 , wherein a thickness of the piezoelectric film is equal to or smaller than about 1.5λ.3. The filter device according to claim 1 , wherein the elastic wave resonator includes a plurality of elastic wave resonators electrically connected to define a second bandpass filter.4. The filter device according to claim 3 , wherein the second bandpass filter is a ladder filter.5. The filter device according to claim 3 , wherein the filter device is a duplexer including the longitudinally coupled resonator elastic wave filter as a reception filter and the second bandpass filter as a transmission filter.6. The filter device according to claim 3 , wherein the first bandpass filter and the second bandpass filter are provided on a single chip component.7. The filter device according to claim 1 , wherein the high acoustic velocity member is a high acoustic velocity support substrate.8. The filter device according to claim 1 , wherein the elastic wave resonator further includes a support substrate claim 1 , and the high acoustic velocity member is a high acoustic velocity film and is provided on the support substrate.9. The filter device according to claim 1 , wherein a low acoustic velocity film with an acoustic velocity of propagating bulk waves claim 1 , which is lower than the acoustic velocity of the elastic waves propagating in the piezoelectric film claim 1 , is ...

Piston mode lamb wave resonators

Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.

ACOUSTIC RESONATOR DEVICE

The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure. 1. An acoustic resonator device , comprising: a carrier layer,', 'a first layer disposed over the carrier layer, and', 'a piezoelectric layer disposed over the first layer;, 'a substrate, comprisingan interdigitated metal disposed over the piezoelectric layer, wherein the interdigitated metal is configured to generate acoustic waves within an acoustically active region; andan acoustic wave scattering structure disposed within the substrate.2. The acoustic resonator device of claim 1 , wherein the acoustic wave scattering structure comprises an apodized surface and a plurality of voids disposed proximate to the apodized surface and wherein at least one of the plurality of voids is in direct contact with the apodized surface.3. The acoustic resonator device of claim 2 , wherein at least one of the plurality of voids is distanced away from the apodized surface and wherein the at least one of the plurality of voids comprises a void width that is less than 5% of a thickness of the first layer.4. The acoustic resonator device of claim 2 , wherein the apodized surface is disposed between the first layer and the piezoelectric layer and wherein at least one of the plurality of voids is disposed within the piezoelectric layer.5. The acoustic resonator device of claim 2 , wherein the apodized surface is disposed between the first layer and the piezoelectric layer and ...

BULK ACOUSTIC WAVE RESONATOR

A bulk acoustic wave (BAW) resonator is disclosed. The BAW resonator includes: a first electrode, a second electrode, a piezoelectric layer disposed between the first electrode and the second electrode, a substrate positioned adjacent to the second electrode, and an active area having at least one biarc boundary. 1. A bulk acoustic wave resonator , comprising:a first electrode;a second electrode;a piezoelectric layer disposed between the first electrode and the second electrode;a substrate positioned adjacent to the second electrode such that the second electrode is disposed between the substrate and the piezoelectric layer; andan active area having at least one boundary with a first curvature and a second curvature that share a common tangent at a connecting point between the first curvature and the second curvature, wherein a radius of the first curvature is centered at a different point than a radius of the second curvature.2. The bulk acoustic wave resonator of claim 1 , wherein the first curvature and the second curvature of the at least one boundary form a spline-shaped curve comprising at least three control points.3. The bulk acoustic wave resonator of claim 2 , wherein the spline-shaped curve comprises an approximation of a Bezier curve.4. The bulk acoustic wave resonator of claim 1 , wherein the first electrode comprises an opening formed therein that is positioned in an overlapping relationship relative to the active area and wherein the at least one boundary comprises an inner boundary of the active area.5. The bulk acoustic wave resonator of claim 4 , wherein the opening is substantially spline curve-shaped.6. The bulk acoustic wave resonator of claim 5 , further comprising:a pillar positioned within an acoustic reflector.7. The bulk acoustic wave resonator of claim 6 , wherein the pillar is substantially spline curve-shaped to match the substantially spline curve-shaped opening.8. The bulk acoustic wave resonator of claim 7 , wherein the at least one ...

CAVITY-TYPE FILM BUCK ACOUSTIC WAVE RESONATOR WITHOUT A SACRIFICIAL LAYER AND A CONSTRUCTION METHOD THEREOF

Provided in the present invention are a cavity-type bulk acoustic resonator without the need to prepare a sacrificial layer, and a preparation method therefor, comprising the following steps: taking a piezoelectric single crystal wafer subjected to ion implantation and having a bottom electrode, and forming a cavity on the side of the piezoelectric single crystal wafer having the bottom electrode; then taking a substrate, and bonding the substrate to the side of the piezoelectric single crystal wafer having the cavity; performing heat treatment on the bonded intermediate product to peel off the thin film of the piezoelectric single crystal wafer; and producing a top electrode on the peeled side of the piezoelectric single crystal wafer. The preparation method for the cavity-type bulk acoustic resonator without the need to prepare a sacrificial layer set forth in the present invention does not require the growth of a sacrificial layer, and does not perform etching and hole-forming on the thin film; the mechanical strength of the device is increased, and the thin film is not easily damaged; the cavity structure is formed before film forming, yield is high, and residue from etching is not left after film forming, there being no need to consider the effect of incomplete release on the device. 1. A method for constructing a cavity-type film bulk acoustic wave resonator without making a sacrificial layer , said method comprising the following steps:(1) using an ion-implanted piezoelectric single crystal wafer with a bottom electrode, and forming a cavity on a bottom electrode side of the piezoelectric single crystal wafer; using a substrate and bonding the substrate to a cavity side of the piezoelectric single crystal wafer to provide a bonded intermediate;(2) performing heat treatment on the bonded intermediate obtained in step 1, peeling off a film from the piezoelectric single crystal wafer and generating a top electrode at a film-peeling side.2. The method according ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH LOW THERMAL IMPEDANCE

An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the device to provide lower thermal resistance between the conductor pattern and the substrate. 1. An acoustic resonator device with low thermal impedance comprising:a substrate having a surface;a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate via a bonding oxide (BOX) layer except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate; anda conductor pattern including an interdigital transducer (IDT) formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm,wherein the piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the device to provide lower thermal resistance between the conductor pattern and the substrate.2. The device of claim 1 , wherein the removed piezoelectric plate and the BOX layer are a predetermined area of a bonding layer and piezoelectric layer that are removed from selected locations of the surface of a substrate of the device to provide a predetermined amount in reduction of thermal resistance between the conductor pattern and the substrate.3. The device of claim 2 , further comprising a second metal layer that is attached to:a top of the substrate;a side surface of the bonding layer;a side surface and part of a top surface of the piezoelectric layer; anda side surface and part of a top surface of the IDT.4. The device of claim 3 ,wherein the interleaved fingers are two ...

Transversely-excited film bulk acoustic resonator with low thermal impedance

An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the device to provide lower thermal resistance between the IDT and the substrate.

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH LOW THERMAL IMPEDANCE

An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on a diaphragm of the plate that is formed over a cavity in the substrate. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the substrate to provide lower thermal resistance between the IDT and the substrate. 1. A method of forming a filter device with low thermal impedance comprising:forming a bonding oxide (BOX) layer on a surface of a substrate;bonding a piezoelectric plate to the bonding layer;removing the piezoelectric plate and the BOX layer from at least a portion of the surface of the substrate; 'the conductor pattern contacts the portion of the surface of the substrate where the piezoelectric plate and BOX were removed; and', 'forming a conductor pattern on a front surface of the piezoelectric plate, wherein'} 'wherein the conductor pattern includes an interdigital transducer with interleaved fingers disposed on the diaphragm over the cavity.', 'forming a cavity in the surface of the substrate, wherein a portion of the piezoelectric plate forms a diaphragm spanning the cavity;'}2. The method of claim 1 , wherein the cavity is formed in the surface of the substrate before one of:forming the bonding oxide (BOX) layer on a surface of a substrate;bonding the piezoelectric plate to the bonding layer;removing the piezoelectric plate and the BOX layer from at least the portion of the surface of the substrate; orforming the conductor pattern on the front surface of the piezoelectric plate.3. The method of claim 1 , wherein the cavity is formed in the surface of the substrate after forming the conductor pattern on the front surface of the piezoelectric plate.4. The method of claim 1 , wherein removing ...

Transversely-excited film bulk acoustic resonator with a front-side dielectric layer and optimized pitch and mark

Acoustic resonators and filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm, a conductor pattern on the front surface, the conductor pattern including an interdigital transducer (IDT), fingers of the IDT on the diaphragm, and a front-side dielectric layer on the front surface of the piezoelectric plate between the interleaved fingers. A resonant frequency is determined, in part, by a thickness of the front-side dielectric layer. A ratio of a mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3.

COMPOSITE DEVICE

A composite device includes a silicon substrate including first and second main surfaces on opposite sides, a semiconductor device adjacent to at least one of the first and second main surfaces, and an acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an IDT disposed on the piezoelectric layer. The piezoelectric layer has a thickness of not greater than about 2.5λ where λ is a wavelength defined by an electrode finger pitch of the IDT. 1. A composite device comprising:a silicon substrate including a first main surface and a second main surface opposed to the first main surface;a semiconductor device disposed adjacent to at least one of the first main surface and the second main surface of the silicon substrate; andan acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an IDT disposed on the piezoelectric layer; whereinthe piezoelectric layer has a thickness of not greater than about 2.5λ, where λ is a wavelength defined by an electrode finger pitch of the IDT.2. The composite device according to claim 1 , further comprising a via electrode electrically connected to the IDT and extending through the silicon substrate.3. The composite device according to claim 1 , whereinthe acoustic wave device includes a first wiring electrode electrically connected to the IDT;the semiconductor device includes a functional electrode and a second wiring electrode electrically connected to the functional electrode; andthe first wiring electrode and the second wiring electrode do not overlap in plan view.4. The composite device according to claim 1 , whereinthe semiconductor device is disposed adjacent to the first main surface of the silicon substrate; anda shield electrode is ...

BULK-ACOUSTIC WAVE RESONATOR AND METHOD FOR MANUFACTURING THE SAME

A bulk-acoustic wave resonator includes: a membrane layer disposed on a substrate and forming a cavity; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer, and including a frame part disposed at an edge of an active area and having a thickness greater than that of a portion of the upper electrode disposed in a central portion of the active area; and a frequency adjusting layer disposed on the piezoelectric layer and the upper electrode. The frequency adjusting layer is excluded from an inclined surface of the frame part, or a thickness of a portion of the frequency adjusting layer on the inclined surface is less than that of other portions of the frequency adjusting layer. The frequency adjusting layer is disposed on a portion of the piezoelectric layer protruding from the upper electrode. 1. A bulk-acoustic wave resonator comprising:a membrane layer disposed on a substrate and forming a cavity together with the substrate;a lower electrode disposed on the membrane layer and over the cavity;a piezoelectric layer disposed on the lower electrode;an upper electrode disposed on the piezoelectric layer, and comprising a frame part disposed at an edge of an active area and comprising a thickness that is greater than a thickness of a portion of the upper electrode disposed in a central portion of the active area; anda frequency adjusting layer disposed on the piezoelectric layer and the upper electrode,wherein the frequency adjusting layer is excluded from an inclined surface of the frame part, or a thickness of a portion of the frequency adjusting layer on the inclined surface is less than a thickness of other portions of the frequency adjusting layer, andwherein the frequency adjusting layer is disposed on a portion of the piezoelectric layer protruding from the upper electrode.2. The bulk-acoustic wave resonator of claim 1 , wherein the portion of the ...

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR USING IMPROVED FABRICATION CONDITIONS, PERIMETER STRUCTURE MODIFICATIONS, AND THIN FILM TRANSFER PROCESS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric film overlying a growth substrate, the piezoelectric film having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a first electrode overlying the piezoelectric film, the first electrode having one or more first electrode edges being characterized by a first electrode edge geometric shape;forming a first passivation layer overlying the first electrode and the piezoelectric film;forming a sacrificial layer overlying the first passivation layer. the first electrode, and the piezoelectric film;forming a support layer overlying the sacrificial layer, the first passivation layer, the first electrode, and the piezoelectric film thereby forming a device on the growth substrate;polishing the support layer;forming a bonding support layer overlying a bond substrate;flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer ...

RESONATOR AND SEMICONDUCTOR DEVICE

The application discloses a resonator and a semiconductor device. The resonator includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure successively includes a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top. A cavity is formed between the substrate and the multilayer structure. The cavity is delimited by an upper surface of the substrate and a lower surface of the multilayer structure. A middle region of a part, corresponding to the cavity, of the lower surface of the multilayer structure is a plane. A smooth curved surface for smooth transition is between an edge of the middle region and an edge of the cavity, and the smooth curved surface is between the upper surface of the substrate and the plane. 1. A resonator , comprising:a substrate; anda multilayer structure, formed on the substrate, the multilayer structure successively comprising a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top,wherein a cavity is formed between the substrate and the multilayer structure, the cavity is delimited by an upper surface of the substrate and a lower surface of the multilayer structure, a middle region of a part, corresponding to the cavity, of the lower surface of the multilayer structure is a plane, a smooth curved surface for smooth transition is between an edge of the middle region and an edge of the cavity, and the smooth curved surface is between the upper surface of the substrate and the plane.2. The resonator of claim 1 , wherein the smooth curved surface comprises a first curved surface and second curved surface that are connected in a manner of smooth transition.3. The resonator of claim 2 , wherein a vertical section of the first curved surface has a shape of inverted parabola claim 2 , a vertical section of the second curved surface has a shape of parabolia claim 2 , and the first curved surface is below the second curved surface.4. ...

XBAR RESONATORS WITH NON-RECTANGULAR DIAPHRAGMS

Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least a portion of an edge of the diaphragm is at an oblique angle to the fingers. 1. An acoustic resonator device comprising:a substrate having a surface;a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate, the diaphragm having an edge about a perimeter of the cavity; andan interdigital transducer (IDT) formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm, the IDT configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT,wherein at least a portion of the edge of the diaphragm is at an oblique angle to the fingers.2. The device of claim 1 , wherein a direction of acoustic energy flow of the excited primary shear acoustic mode is substantially normal to the front and back surfaces of the piezoelectric plate.3. The device of claim 1 , wherein a Z-axis of the piezoelectric plate is normal to the front and back surfaces.4. The device of claim 1 , wherein the interleaved fingers are substantially parallel to each other and extend in a first direction claim 1 , ...

DEVICES AND METHODS RELATED TO FILM BULK ACOUSTIC RESONATORS

Devices and methods related to film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator can be manufactured by a method that includes forming a first electrode having a first lateral shape and providing a piezoelectric layer on the first electrode. The method can further include forming a second electrode having a second lateral shape on the piezoelectric layer such that the piezoelectric layer is between the first and second electrodes. The forming of the first electrode and the forming of the second electrode can include selecting and arranging the first and second lateral shapes to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry. 1. A method for fabricating a bulk acoustic resonator , the method comprising:forming a first electrode having a first lateral shape;providing a piezoelectric layer on the first electrode; andforming a second electrode having a second lateral shape on the piezoelectric layer such that the piezoelectric layer is between the first and second electrodes, the forming of the first electrode and the forming of the second electrode including selecting and arranging the first and second lateral shapes to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, the resonator shape including N curved sections joined by N vertices of an N-sided polygon, the resonator shape selected to have no axis of symmetry.2. The method of wherein the quantity N is an integer greater or equal to 4.3. The method of wherein the quantity N is equal to 5.4. The method of wherein each of the N curved sections is a smooth curve.5. The method of wherein each of the N vertices is defined by joining of two neighboring smooth curves claim 4 , such that the two neighboring smooth curves combined is not ...

PIEZOELECTRIC VIBRATOR ELEMENT, PIEZOELECTRIC VIBRATOR, OSCILLATOR, AND METHOD OF MANUFACTURING PIEZOELECTRIC VIBRATOR ELEMENT

There is provided a piezoelectric vibrator element which is excellent in vibration characteristics, high in quality, and capable of suppressing a frequency fluctuation after a frequency adjustment. The piezoelectric vibrator element is provided with a piezoelectric plate having a pair of vibrating arm parts, an electrode film disposed on obverse and reverse surfaces of the piezoelectric plate, and weight metal films for a frequency adjustment disposed on the electrode film at the obverse surface side in the vibrating arm parts. The reverse surface of the vibrating arm part has a reverse side exposure part from which the piezoelectric plate is exposed. The obverse surface of the vibrating arm part has an obverse side exposure part from which the weight metal film and the electrode film are removed, and from which the piezoelectric plate is exposed. A whole of the obverse side exposure part overlaps the reverse side exposure part at a distance from the electrode film on the reverse surface viewed from a thickness direction of the piezoelectric plate. 1. A piezoelectric vibrator element comprising:a piezoelectric plate having a pair of vibrating arm parts;an electrode film disposed on obverse and reverse surfaces of the piezoelectric plate; anda weight metal film for a frequency adjustment disposed at an obverse surface side in the vibrating arm part, and on the electrode film, whereina reverse surface of the vibrating arm part has a reverse side exposure part from which the piezoelectric plate is exposed,the obverse surface of the vibrating arm part has an obverse side exposure part from which the weight metal film and the electrode film are removed, and from which the piezoelectric plate is exposed, anda whole of the obverse side exposure part overlaps the reverse side exposure part at a distance from the electrode film on the reverse surface viewed from a thickness direction of the piezoelectric plate.2. The piezoelectric vibrator element according to claim 1 , ...

Air-Gap Type Film Bulk Acoustic Resonator

An air-gap type film bulk acoustic resonator (FBAR) is provided. The air-gap type FBAR includes a substrate which comprises an air gap portion having a substrate cavity formed in a top surface, a lower electrode formed on the substrate, a piezoelectric layer which is formed on the lower electrode and has one side forming an edge portion in the vicinity of a virtual edge according to vertical projection of the air gap portion, an upper electrode formed on the piezoelectric layer, a first electrode frame which comprises an open ring structure in plane, the open ring structure surrounding a part of a periphery of the piezoelectric layer on the lower electrode, and a second electrode frame positioned on the upper electrode and adjacent to an open portion of the open ring structure. 1. An air-gap type film bulk acoustic resonator (FBAR) comprising:a substrate which comprises an air gap portion having a substrate cavity formed in a top surface;a lower electrode formed on the substrate;a piezoelectric layer which is formed on the lower electrode and has one side forming an edge portion in the vicinity of a virtual edge according to vertical projection of the air gap portion;an upper electrode formed on the piezoelectric layer;a first electrode frame which comprises an open ring structure in plane, the open ring structure surrounding a part of a periphery of the piezoelectric layer on the lower electrode; anda second electrode frame positioned on the upper electrode and adjacent to an open portion of the open ring structure.2. The air-gap type FBAR of claim 1 , wherein the open ring structure surrounds a part of the virtual edge according to the vertical projection of the air gap portion and the second electrode frame is spaced a predetermined distance from the first electrode frame and surrounds the remaining portion of the virtual edge.3. The air-gap type FBAR of claim 2 , wherein the first electrode frame comprises the open ring structure which is formed on the lower ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH TWO-LAYER ELECTRODES WITH A WIDER TOP LAYER

There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The interleaved fingers comprise a first layer adjacent the diaphragm and a second layer over the first layer opposite the diaphragm, the second layer having a greater width than the first layer. 1. An acoustic resonator device comprising:a substrate having a surface;a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate; andan interdigital transducer formed on the front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on the diaphragm configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm,wherein the interleaved fingers comprise a first layer adjacent the diaphragm and a second layer over the first layer, the second layer having a greater width than the first layer.2. The device of claim 1 , wherein the first layer is a different material than the second layer.3. The device of claim 2 , wherein the first layer comprises a low transverse acoustic impedance metal.4. The device of claim 2 , wherein the second layer comprises a high transverse acoustic impedance metal.5. The device of claim 2 , wherein the first layer ...

Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer

An acoustic resonator device, filter devices, and methods of making the same. An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, where the back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. The device further includes an interdigital transducer formed on the front surface of the piezoelectric plate, where interleaved fingers of the IDT disposed on the diaphragm are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The interleaved fingers include a first layer adjacent the diaphragm and a second layer over the first layer, the second layer having a narrower width than the first layer.

QUARTZ CRYSTAL RESONATOR AND QUARTZ CRYSTAL RESONATOR UNIT

A quartz crystal resonator that includes a substrate including a vibration portion, a frame portion that surrounds the vibration portion, and first to fourth coupling portions that couple the vibration portion and the frame portion to each other; and first and second excitation electrodes. An intersecting point of diagonal lines of a quadrangle formed by first to fourth connection portions is located on the positive side of the z axis relative to the x axis. 1. A quartz crystal resonator comprising:a substrate that is a quartz crystal plate having a first main surface and a second main surface, the substrate including a vibration portion, a frame portion that is separated from the vibration portion and surrounds the vibration portion when viewed in a direction normal to the first main surface, and first to fourth coupling portions that couple the vibration portion and the frame portion to each other;a first excitation electrode on the first main surface in the vibration portion; anda second excitation electrode on the second main surface in the vibration portion,wherein the vibration portion has a rectangular shape having a first edge, a second edge, a third edge, and a fourth edge, the third and fourth edges being perpendicular to the first and second edges when viewed in the normal direction,wherein, when an intersecting point of diagonal lines of the vibration portion when viewed in the normal direction is defined as an origin, a first straight line that passes through the origin, that is parallel to the first edge, and that has a positive side on which the third edge is located is defined as a z axis, and a second straight line that passes through the origin, that is parallel to the third edge, and that has a positive side on which the second edge is located is defined as an x axis,the first coupling portion couples the vibration portion and the frame portion in a first region on the positive side of the z axis and the negative side of the x axis when viewed in ...

PIEZOELECTRIC VIBRATING PIECE AND PIEZOELECTRIC DEVICE

A piezoelectric vibrating piece includes a piezoelectric substrate and excitation electrodes. The piezoelectric substrate is formed in a flat plate shape and vibrates in a thickness-shear vibration mode. The excitation electrodes are disposed on respective both principal surfaces of the piezoelectric substrate. The excitation electrode includes a main thickness portion and an inclined portion. The main thickness portion has a constant thickness. The inclined portion is formed in a peripheral area of the main thickness portion. The inclined portion has a thickness that gradually decreases from a portion contacting the main thickness portion to an outermost periphery of the excitation electrode. An inclination width as a width of the inclined portion has a length that is equal to or more than 0.5 times and equal to or less than three times of a flexural wavelength. The flexural wavelength is a wavelength of a flexure vibration as an unnecessary vibration. 1. A piezoelectric vibrating piece , comprising:a piezoelectric substrate formed in a flat plate shape, the piezoelectric substrate vibrating in a thickness-shear vibration mode; andan excitation electrode, respectively disposed on both principal surfaces of the piezoelectric substrate,wherein the excitation electrode includes a main thickness portion and an inclined portion,the main thickness portion having a constant thickness,the inclined portion being formed in a peripheral area of the main thickness portion, the inclined portion having a thickness that gradually decreases from a portion contacting the main thickness portion to an outermost periphery of the excitation electrode, andan inclination width as a width of the inclined portion has a length that is equal to or more than 0.5 times and equal to or less than three times of a flexural wavelength, the flexural wavelength being a wavelength of a flexure vibration as an unnecessary vibration.2. The piezoelectric vibrating piece according to claim 1 , whereinthe ...