CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
Номер патента: US20220025214A1
Опубликовано: 27-01-2022
Автор(ы): Cho Youn Jin, KIM Hyeong Mook, Kim Won Jung, KOO Yoon Young, LEE Eui Rang, LEE Jong Won, PARK Tae Won
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Опубликовано: 27-01-2022
Автор(ы): Cho Youn Jin, KIM Hyeong Mook, Kim Won Jung, KOO Yoon Young, LEE Eui Rang, LEE Jong Won, PARK Tae Won
Принадлежит:
Получить PDF файл: Открыть в новом окне
Composition for inducing differentiation of multipotent neural stem cells into dopaminergic neurons and method for inducing differentiation of multipotent neural stem cells into dopaminergic neurons by using the same
Номер патента: US20170209451A1. Автор: Kang-Yell Choi,Mi-Yeon Kim,Yeong-Mun Kim. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2017-07-27.