一种生长在SiO2衬底上的二维InGaS纳米材料及其制备方法.

一种生长在SiO2衬底上的二维InGaS纳米材料及其制备方法

Номер патента: CN110364418A
Опубликовано: 22-10-2019
Автор(ы): 李国强, 王文樑, 谢欣灵, 赖书浩, 陈德润
Принадлежит: South China University of Technology SCUT
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