Aluminum nitride single crystal film, aluminum nitride single crystal laminated substrate and processes for production of both
Номер патента: EP1918429A4
Опубликовано: 21-09-2011
Автор(ы): Akira Hakomori, Hiroyuki Fukuyama, Kazuya Takada
Принадлежит: Tohoku University NUC, Tokuyama Corp
Опубликовано: 21-09-2011
Автор(ы): Akira Hakomori, Hiroyuki Fukuyama, Kazuya Takada
Принадлежит: Tohoku University NUC, Tokuyama Corp
III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate
Номер патента: US8845992B2. Автор: Takuji Okahisa,Seiji Nakahata,Tomoki Uemura. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2014-09-30.