Quantum dot-fullerene junction optoelectronic devices
Номер патента: EP2483926A1
Опубликовано: 08-08-2012
Автор(ы): Ethan Klem, John Lewis
Принадлежит: Research Triangle Institute, Research Triangle Institute International
Опубликовано: 08-08-2012
Автор(ы): Ethan Klem, John Lewis
Принадлежит: Research Triangle Institute, Research Triangle Institute International
Реферат: An optoelectronic device includes a first electrode, a quantum dot layer disposed on the first electrode including a plurality of quantum dots, a fullerene layer disposed directly on the quantum dot layer wherein the quantum dot layer and the fullerene layer form an electronic heterojunction, and a second electrode disposed on the fullerene layer. The device may include an electron blocking layer. The quantum dot layer may be modified by a chemical treatment to exhibit increased charge carrier mobility.
Quantum dot-fullerene junction based photodetectors
Номер патента: EP2483925A1. Автор: Ethan Klem,John Lewis. Владелец: Research Triangle Institute International. Дата публикации: 2012-08-08.