Porous silicon structure, porous silicon-carbon composite comprising same, and negative electrode active material
Номер патента: EP4269341A4
Опубликовано: 09-10-2024
Автор(ы): Hyun Seok Lee, Jeong Gyu PARK, Jong Chan Lim, Jung Hyun Lee, Sang Jin Nam, Sung Woo Lim, Young Min Jeon
Принадлежит: Dae Joo Electronic Materials Co Ltd
Опубликовано: 09-10-2024
Автор(ы): Hyun Seok Lee, Jeong Gyu PARK, Jong Chan Lim, Jung Hyun Lee, Sang Jin Nam, Sung Woo Lim, Young Min Jeon
Принадлежит: Dae Joo Electronic Materials Co Ltd
Porous silicon structure, porous silicon-carbon composite comprising same, and negative electrode active material
Номер патента: EP4269341A1. Автор: Jong Chan Lim,Jung Hyun Lee,Hyun Seok Lee,Jeong Gyu PARK,Young Min Jeon,Sang Jin Nam,Sung Woo Lim. Владелец: Dae Joo Electronic Materials Co Ltd. Дата публикации: 2023-11-01.