DEVELOPMENT OF POLYCRYSTALLINE SILICON BY NATURAL FRITTAGE FOR PHOTOVOLTAIC APPLICATIONS
Номер патента: FR2966287B1
Опубликовано: 28-12-2012
Автор(ы): Celine Pascal, Florence Servant, Jean-Marie Lebrun, Jean-Michel Missien, Jean-Paul Garandet
Принадлежит: Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA, Institut Polytechnique de Grenoble, Universite Joseph Fourier Grenoble 1
Опубликовано: 28-12-2012
Автор(ы): Celine Pascal, Florence Servant, Jean-Marie Lebrun, Jean-Michel Missien, Jean-Paul Garandet
Принадлежит: Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA, Institut Polytechnique de Grenoble, Universite Joseph Fourier Grenoble 1
Реферат: The invention relates to a silicon sintering process, with no external force added, which comprises positioning a silicon sample in a furnace and then heat-treating this sample at least at a certain temperature and with at least a partial pressure of oxidizing species in order to control the thickness of a silicon oxide layer on the surface thereof.
Roller coating device for photovoltaic glass coated with AR coating liquid
Номер патента: US20180346373A1. Автор: Tao Wang. Владелец: Suzhou Lavennano Technologies Inc. Дата публикации: 2018-12-06.