液体排出头及其生产方法,生产微小机械装置的方法

Mode of execution

As one of this invention more suitable embodiment, the one below is provided with a plurality of liquid discharge by the liquid discharge head, a 1st 2nd base plate and a base plate are connected to each other so as to form a plurality of liquid flow passages, the liquid flow passage is communicated with the corresponding discharge port, a plurality of energy conversion element is disposed in a corresponding liquid flow passage, is used to convert the electrical energy into the liquid flow passage of the liquid on discharges energy , a plurality of function are different from each other of the component or circuit is used for controlling the driving condition of the energy conversion element, wherein the plurality of the function component or circuit different from each other in accordance with their function is allocated to the 1st and 2nd base plate in the base plate.

Figure 1 is cross electroanatomical map, the Figure of a along the liquid flow path has shown the one embodiment of the present invention the liquid discharge head.

As shown in Figure 1, the liquid discharge head has a plurality of element substrate 1, in the element substrate 1 is, are arranged in parallel a plurality of heat generating element 2, these heating element to provide heat energy for generating a bubble in the liquid, a top plate 3 is connected to the element substrate 1 is, an orifice plate 4 with the element substrate 1 and the top plate 3 is connected with the front end surface of, a movable member 6 is mounted in the liquid flow passage 7 in, the liquid flow passage 7 from the element base plate 1 and the top plate 3 form.

Element substrate 1 includes a substrate of silicon or the like, used for insulating and heat accumulation or four silicon oxide film of the silicon nitride thin film is formed on the substrate, form the heat-generating element 2 and the wiring laid on the resistive layer on the same. From the wiring to the resistive layer is applied a voltage, so that the current flowing in the resistive layer, by the heat generating element 2 heating.

The top plate 3 for at their and the stated component base plate 1 form a plurality of liquid flow between the channel 7 and a common liquid chamber 8, the liquid flow passage 7 corresponding to the corresponding heat generating element 2, the liquid chamber 8 used to channel the flow of the liquid 7 in the liquid supply. In the element substrate 1 form a plurality of liquid flow passage 7 and the common liquid chamber 8 of the flow passage side wall 9 (negative   type) by negative photosensitive epoxy resin forming, this will in the following text with reference to Figure 16 and Figure 9A-9C to explain the.

The orifice plate 4 is composed of a plurality of discharge port 5 is formed, these nozzle corresponding to the liquid flow passage 7, and through the liquid flow passage 7 to the common liquid chamber 8. The orifice plate 4 is made of a silicon material, for example, by having the discharge port 5 of the silicon substrate into a thickness of about 10 to 150 micron flat plate. The orifice plate 4 does not always need to structure of this invention, substituted provided with a hole plate, when the liquid flow path 7 in the top plate 3 is formed in the, corresponding to orifice plate 4 of the thickness of the wall can be mounted on the top plate 3 on the left side of the front surface, the nozzle 5 may be formed in the part so as to form a top plate of the discharge port.

The movable part 6 is a cantilever beam thin layer, and the heat generating element 2 is a face-to-face relationship, so that the each of the liquid flow passage 7 into the discharge port 5 of the liquid flow passage 1st 7a and has a heat generating element 2 2nd of the liquid flow path 7b, the movable part 6 composed of a silicon material such as silicon nitride or silicon oxide is formed.

The movable member 6 from the heat generating element 2 a certain distance to the following state, that is, the movable member 6 in the face of the heat generating element in the position of the cover the heat generating element 2 so that it can be the mobile part 2 has a fulcrum 6a at the upstream side of the flow of the liquid, the large flow of liquid through the liquid discharge function, via the removable part 6 from a common liquid chamber 8 to the discharge port 5 flow, the movable part 6 also has a free end 6b is located in corresponding to the pivot 6a the downstream side. The heat generating element 2 and the movable part 6 to the space between the bubble generation region 10.

When the above-mentioned structure the heat generating element 2, heat generated, the action of heat generated in the movable part 6 and the heat generating element 2 the bubble generation region 10 the liquid in, thus based on thin film boiling bubble of the phenomenon in the heat generating element 2 a on, and becomes larger. The larger the bubble generated on a priority basis, the pressure of the movable member 6 is, so that the mobile part 6 around the fulcrum 6a to move towards the nozzle is greatly opened 5 one side, as shown in Figure 1 is shown by a dashed line in. Because the movable part 6 of the state of the mobile or after moving, based on the generated air bubbles or the bubble itself to grow up to the pressure of the discharge port 5 a side diffusion, liquid is from the discharge port 5 discharge.

That is to say, the movable part 6 is set up in the bubble generation region 10, the movable member 6 in the liquid flow path 7 in the upstream side of the liquid flow (common liquid chamber 8 side) has a pivot 6a, and in a downstream side (discharge port 5 side) with free end 6b, so as to bubble pressure diffusion direction toward a downstream side, the pressure of the bubble for direct and effective discharge. The growth of the bubble itself is directed to the downstream direction is in the direction, the bubble in the downstream than in the upstream growth of large. As mentioned above, the direction of the bubble itself is increased by the control of the movable member so as to control the direction of pressure diffusion air bubbles, also so can improve the discharge characteristics such as the fundamental and discharging efficiency speed or expulsive force.

On the other hand, steps begin to disappear when the bubble, through the movable member 6 of the combined effect of the elastic force of the air bubbles disappear rapidly, the movable part 6 finally returned to Figure 1 in the initial position shown in solid lines. At this moment, in order to the bubble generation region 10 after shrinkage in the volume of the compensation air bubbles, and the volume of the compensating liquid discharged, liquid will be from the upstream side, that is the common liquid chamber 8 one side, in the flow, thus use of the liquid to the liquid flow passage 7 re-filling, re-filling of such liquids by the movable member 6 by the return of rapidly, to reasonable and stable.

Furthermore, the embodiment of the liquid discharge head is used to control heat generating element 2 a drive circuit and component. These circuit and element in accordance with its function is to set up separately in the element substrate 1 or top board 3 is. The element base plate 1 and the top plate 3 are made of silicon material, therefore, by adopting the semiconductor wafer processing process, the circuit and element is able to be easily and accurately formed.

In the below described is made by the semiconductor wafer processing process of the element substrate 1 structure.

Figure 2 in order to for graph 1 shown in the liquid discharge head in the cross-sectional view of an element substrate. As shown in Figure 2, in this embodiment the liquid discharge head of the element substrate 1 in, as the heat accumulation layer of the thermal oxidation film 302 and is regarded as the heat accumulation layer intermediate layer thin-film 303 in designated order is a layer of a layer on the silicon substrate 301 on the surface. SiO2 film or Si3O4 film is used for the intermediate layer thin-film 303. A resistive layer 304 is partially is arranged in the intermediate layer thin-film 303 on the surface of the, wiring 305 is partially arranged on the resistive layer 304 on the surface of the. Aluminum alloy circuit such as aluminum-silicon, aluminum-copper or the like is used for the wiring 305. Including SiO2 film or Si3O4 film protective film 306 is formed on wiring 305, resistive layer 304 and the intermediate layer 303 on the surface of the. Used to protect the protective film 306 from chemical or physical vibration injury preventing cavitations film 307 is arranged on the protective film 306 corresponding to the resistive layer 304 on a part of a surface of and surrounding the portion of the surface, the chemical or physical vibration by the resistive layer 304 of the heating generating. Resistive layer 304 is not provided with the wiring 305 is the portion of the area of the surface of a heat generating part 308, the resistive layer 304 role of heat generated in this position.

In the element substrate 1 of the semiconductor production process of thin film on the silicon substrate 301 is formed on the surface of the, heat generating part 308 arranged in the silicon substrate 301 is.

Figure 3 is the transverse a cross-sectional view, in this view, diagram of a typical 2 shown in the by the element substrate, the element substrate is cut so that the longitudinal direction of the main body element.

As shown in Figure 3, a N-type well region 422 and a P-type well region 423 local arranged in the silicon substrate 301 on the surface layer of, the silicon substrate is a P conductor. Through the use of the usual Mos process, such as the introduction of and spread through the impurity ion implantation, the P-Mos420 and N-Mos421 arranged correspondingly on the N-type well region 422 and P-type well region 423 on. P-Mos420 includes a source region 425 and a drain region 426 and a gate wiring 435, the source 425 and drain regions 426 by N-type or P-type impurity is introduced into the partially N-type well region 422 is formed in the surface layer, the gate wiring 435 through a thickness of several hundred angstroms of gate insulating film 428 N-type well region in the stack 422 apart from the source region 425 and drain regions 426 on the surface of the outside part. Furthermore, N-Mos421 includes a source region 425 and a drain region 426 and a gate wiring 435, the source 425 and drain regions 426 by N-type or P-type impurity local introduced into the P-type well region 423 is formed in the surface layer, the through-thickness of a few hundred angstroms of gate insulating film 428 stack in the P-type well region 422 apart from the source region 425 and drain regions 426 on the surface of the outside part. Gate wiring 435 accumulational by the CVD method to a thickness of 4000 angstroms to 5000 angstroms is formed of polycrystalline silicon. C-Mos logic circuit includes P-Mos420 and N-Mos421.

For driving an electrothermal conversion element transistor N-Mos 430 is arranged in the P-type well region 423 with N-Mos421 on the different parts of the. The N-Mos transistor 430 also includes a source region 432 and a drain region 431 and a gate wiring 433, the source region 432 and drain region 431 through the impurity introduction and of local diffusion step is provided in the P-type well region 423 on the surface layer of, the gate wiring 433 through the door insulation film 428 stack in the P-type well region 423 apart from the source region 432 and drain region 431 on the surface of the outside part.

In this embodiment, N-Mos transistor 430 is used as the transistor driving the electrothermal conversion element, if the transistor is a can drive a plurality of electrothermal conversion element and the above-mentioned micro-structure can be obtained if the transistor, the transistor is not limited to this type of transistor.

In the element such as P-Mos420 and N-Mos421 and N-Mos421 between and N-Mos transistor 430 between, by a thickness of 5000 angstroms -10000 angstroms of oxide region is formed oxidation film isolation region 424, the above-mentioned element isolation region is oxidized film 424 isolated. From the silicon substrate 301 at one side of the surface of, corresponding to the heat generating part 308 that a portion of the isolation oxide film 424 a 1st heat accumulation layer 434 role.

Including to a thickness of about 7000 angstroms of PSG film or BPSG film interlayer insulating film 436 through the CVD method in each P-Mos420, N-Mos421 and N-Mos transistor 430 is formed on the surface of the. In the interlayer insulating film 436 is leveled after through the heat treatment, the aluminum electrode 437 realize wiring, the circuit is 1st line layer, the 1st line layer to pass through the a extends through the interlayer insulating film 436 and a gate insulating film 428 of the contact hole. Including Sio2 thin-film interlayer insulating film 438 by plasma CVD method on the interlayer insulating film 436 and aluminum electrode 437 is formed on the surface of, the Sio2 thin film thickness is 10000 angstroms -15000 angstroms. Including TaN0.8.hex resistive layer of the film 304 through DC sputtering method corresponding to the heat generating site 308 and N-Mos transistor 430 that a portion of the interlayer insulating film 438 is formed on the surface of, the TaN0.8. hex film to a thickness of about 1000 angstroms. The resistive layer 304 through the interlayer insulating film 438 with the through hole that is formed on the drain region 431 aluminum in the vicinity of the electrode 437 is electrically connected. As the aluminum wiring line layer 2nd 305 the resistive layer 304 is formed on the surface of, the aluminum wiring 305 for each of the electrothermal conversion element to provide line.

Wiring 305, resistive layer 304 and interlayer insulating film 438 a protective film on the surface 306 which is formed by the plasma CVD method to a thickness of 10000 angstroms of Si3N4 thin film. The protective film 306 is formed on the surface to prevent cavitations film 307 comprises a thickness of approximately 2500 angstroms of such tantalum thin film.

As shown in Figure 4, in a discharge head support or a liquid discharge device carried in the liquid discharge head of the above-mentioned way is obtained, the liquid discharge head is fixed on the carrying the printed circuit substrate 23 of the substrate 22 on, and form the liquid discharge head unit 20. In the Figure 4 in, and the liquid discharge head of the discharge devices is electrically connected to the control part of a plurality of wiring pattern 24 is arranged on the printed wiring board 23 is, these wiring pattern 24 through the connecting wire 25 and the external contact piece 15 is electrically connected. The external contact piece 15 not only the element substrate 1 is, therefore, in the liquid discharge head 21 and the external electrical connection between the is similar to the prior art can be made in the form of the liquid discharging head. But here the, said external contact piece 15 is described as arranged on the element substrate 1 is, they are not only can be arranged on the element substrate 1 is, but can also merely positioned on the roof.

Preparation of the element substrate will be described below on the moving part of a method, the method using photolithography process.

Figure 5A-5E for some view, used to describe with reference to Figure 1 is described in the liquid discharge head of the movable part 6 one example of a method of preparing, in Figure 5A-5E in, a cross-section shown, the cross-section along the as shown in Figure 1 shown in the liquid flow passage 7 in the direction of. With reference to Figure 5A-5E in the preparation method, is formed on the element substrate 1 on the movable part 6 and is formed in the side wall of the flow passage on the top plate are connected together, to thereby produce the Figure 1 in the structure shown in the liquid discharge head. Therefore, in the method in the preparation, in the top plate and the element substrate 1 before connected, on the side wall of the flow passage is formed in the top plate, of the movable member 6 on the element substrate 1 to obtain.

First of all, in fig. 5A in, throughout the element substrate 1 with the heat generating element 12 on the surface of the adjacent, 1st TiW of the protective layer as a thin film formed through the sputtering method with a thickness of 5000 angstroms of thin film, the protective layer for protecting the 1st with the heat generating element 2 is electrically connected with the part of the connecting sheet.

Furthermore, in fig. 5B in, in TiW thin film 76 on the surface of the, for the formation of a gap-forming member 71a of the aluminum thin film by a sputtering method to form the thickness is about 4 microns of the thin film. The gap-forming member 71a extends to such a region, in that the thin film SiN the region 72a in the following Figure 5D in the in the step of etching.

Formed through the aluminum film using known lithography method described, thus only the aluminum film is removed with the movable part 6 of the support and the fixed part corresponding to a part of, the gap-forming member 71a is formed in the surface. Therefore, the movable member 6 and the support of that part of the fixed part corresponding TiW thin film 76 is exposed on the surface. This gap-forming member 71A include used for the element substrate 1 and the mobile part 6 form a gap between the aluminum thin film. The gap-forming member 71a is formed in thin film TiW 76 of the following on the surface of all of the surface of the part, includes corresponding to Figure 1 is shown in the heat generating element 2 and the movable part 6 of the bubble generating region between 10 and does not include the corresponding to the movable part 6 of the support and of a position of the fixed part. Therefore, in the preparation method, the gap forming element 71a TiW thin film formed on the corresponding to 76 corresponding to the surface of that part of the flow channel on the side wall.

The gap forming element 71a, will be described below, its function is when the movable part 6 as a dry etching to form an etch barrier layer. This is because the thin film TiW 76, the element substrate 1 as the etching barrier film on the Ta film and as the resistance of the protective layer on the component SiN thin film is used for forming the liquid flow path 7 is etched by the etching gas, in order to prevent those who layer and etching of the film, such a gap-forming member 71a in the element substrate 1 is formed. Therefore, when the SiN thin film dry etching is implemented in order to form the movable member, the TiW thin film 76 is not exposed on the surface of the, TiW thin film 76 and element substrate 1 on the functional element of the forming element through the gap 71a to prevent the damage by dry etching.

Furthermore, in fig. 5C in, the gap forming element 71a and the entire surface of thin film TiW 76 on the entire exposed surface, through the use of plasma CVD method, the thickness is about 4.5 microns thin film SiN 72a is formed so as to cover said gap forming element 71a, the SiN film 72a of the movable member in order to form the 6 material thin film. Here, when the thin film SiN 72a through the use of a below in Figure 6 the plasma CVD device to be described is formed, is set up in the element substrate 1 on the cavitation of the Ta film as barrier thin film through the element substrate 1 such a silicon substrate. Therefore, such as the heat generating element 2 the same element substrate 1 and the functional element of the latch circuit can be protected from ion and the impact of the free-based charge, the ion and free base by in the reaction chamber of the plasma CVD device, such as from plasma discharge decomposition.

As shown in Figure 6 is shown in, a RF electrode 82a and a worktable 85a relative to each other in a certain distance is used for forming the thin film SiN 72a of the reaction chamber of the plasma CVD device 83a in. The reaction chamber 83a of the outside power supply RF 81a to the RF electrode 82a applied voltage. On the other hand, element substrate 1 is fixed to the working table 85a of the RF electrode 82a on the surface of the adjacent one, element substrate 1 with the heat generating element 2 adjacent the surface of the RF electrode 82a relative. Here, a heat generating element formed on the Ta 2 cavitation erosion on the surface of the barrier thin film is electrically connected to the element substrate 1 of the silicon substrate, forming element gap 71a through the element substrate 1 of the table of a silicon substrate and 85a ground.

In the above-mentioned structure in the plasma CVD device, the cavitation barrier film ground state, gas via a supply line 84a filled with reaction chamber 83a, in the element substrate 1 and RF electrode 82a generating plasma between the 46. In the reaction chamber 83a by plasma discharge decomposition of free radical ions and the accumulated on the element substrate 1 is, thus SiN film 72a is formed on the element substrate 1 is. At this moment, through the cavitation barrier film to ground as above mentioned, by the ion and radical in the element substrate 1 produces the electric charge on. Element substrate 1, such as heat generating element 2 and the latch circuit functional element of the ion and prevent the harm of the free-base charge.

Furthermore, in fig. 5D in, through the spraying method in SiN film 72a is formed on the surface to a thickness of about 6100 ANGSTROM aluminum thin film, the aluminum film is formed after through the use of the well-known photo-etching process is scribing, as the 2nd aluminum thin-film of the protective layer (not shown) is retained in SiN film 72a corresponding to the surface of the movable member 6 on the part of the. When the thin film SiN 72a implementation of the dry etching to form the movable member 6 is, as the 2nd aluminum thin-film of the protective layer into a protective layer (an etching barrier layer), in other words, a cover.

Furthermore, by using an etching apparatus, the etching device adopts the dielectric coupling plasma (  plasma dielectric   coupling), thin film SiN 72a is scribing, and adopts the aforesaid 2nd protective layer as a mask, to form the mobile part 6, the movable part is SiN film 72a of the part to the left. In the etching apparatus, using CF4 and O2 mixed gas, the thin film SiN 72a in the etching step, as shown in Figure 1 shown in the, SiN film 72a unnecessary part is removed to the movable part 6 of the support and fixing portion is directly fixed to the element substrate 1 is. TiW a protective layer material of the connecting piece and a component base plate 1 the cavitation of the material of the barrier thin film Ta is contained in the following in close contact in the composition material of the part, the close contact portion of the movable part 6 of the support and the fixed part and the element substrate 1 between.

Here, when the thin film SiN 72a the etching is dry etching device, the gap forming element 71a through the element substrate 1, the ground, this will refer to Figure 7 described below. Therefore, in the process of dry etching, CF4 can prevent the decomposition of the gas and of ions generated by the free-based charge remain in the gap forming element 71a is, so as to protect the the element substrate such as a heat generating element 2, a functional element and a latch circuit. Furthermore, in the thin film SiN 72a does not need to be part of the exposed portion, i.e., etched region, forming element gap 71a is formed as described above, therefore TiW film is not exposed in the surface of the, element substrate 1 by the gap forming element 71a and reliable to be protected, wherein said SiN film 72a does not need to be part of the in the etching step is removed.

As shown in Figure 7 is shown in, a RF electrode 82b and a worktable 85b opposed to each other with a certain distance is used for etching the thin film SiN 72a of the reaction chamber of a dry etching device 83b in. The reaction chamber 83b of the outside power supply RF 81b to the RF electrode 82b applied voltage. On the other hand, element substrate 1 is fixed to the worktable 85b of the RF electrode 82b adjacent that surface of the, element substrate 1 with the heat generating element 2 adjacent the surface of the RF electrode 82b relative. Here, formed by the Ta formed in the element substrate 1 on the cavitation of the barrier thin film is electrically connected to the comprises the gap between the aluminum film forming element 71a, cavitation barrier film is electrically connected to the element substrate 1 on the silicon substrate, such as the foregoing. The gap forming element 71a through the cavitation barrier thin film and the element substrate 1 of the table of a silicon substrate and 85b ground.

In the above-mentioned structure in the dry etching apparatus, CF4 and O2 mixed gas through the supply conduit 84a filled with reaction chamber 83a, the gap forming element 71a ground state, the thin film SiN 72a etching. At this moment, the CF4 gas generated by the decomposition of ions and free radicals in the element substrate 1 produces the electric charge on, however, as mentioned above, the gap forming element 71a is grounded, thus element substrate 1, such as in the heat generating element 2 and a functional element of the latch circuit and prevent the harm of the free-base charge.

In this embodiment, CF4 and O2 is used as the mixed gas reaches the reaction chamber 83a of the gas in the, also can adopt the non-mixed O2 of the CF4 gas or C2F6 gas, or C2F6 gas and O2 mixed gas.

Furthermore, in fig. 5E in, is formed on the movable part 6 containing aluminum film on the protective layer and 2nd containing aluminum film forming element of gap 71a through the use of acetic acid, mixed acid of phosphoric acid and nitric acid is the elution and removing, the movable part 6 is formed on the element substrate 1 is. After this, is formed on the element substrate 1 on the thin film TiW 76 corresponding to the bubble generation region 10 and that part of the connection is removed by using hydrogen peroxide.

The movable member is arranged on the 6 the element substrate 1 is made according to the above-mentioned manner. Here, reference to such a liquid discharge head to the manufacture of the note, that is, as shown in Figure 1 is shown in, the movable part 6 of the support and fixing portion is directly fixed to the element substrate 1 is, however, this kind of manufacturing method can be applied to manufacturing the liquid discharge head, that is, the liquid discharge head of the movable part is fixed to the element substrate, has a base portion of the movable member is interposed between the element substrate. In this situation, as shown in Figure the 5B the gap-forming element shown in 71a before the step of forming, one used for the movable part with the free end of one end fixed to the base portion on the element substrate is formed in the element substrate of the heat generated on the surface of the adjacent element. Also in this case, as a connecting piece of the protective layer and as TiW of the element substrate is a cavitation barrier layer of Ta is contained in the composition material of the base part and element located between the base plate portion of the close contact part in the composition material.

Furthermore, through the use of spin-coating (Figure 8B and 9B), comprising the following table 1 of the material in the negative photosensitive epoxy resin 100 in accordance with the above-mentioned way to form the movable part 6 of the element substrate 1 (as shown in Figure 8A and 9A) is coated.

Table 1

Therefore, photosensitive resin 100 can be disposed on the movable part and the element between the base plate and on the surface of the movable member, therefore, having high reliability can be manufactured of the liquid discharging head of the moving part, the movable part can eliminate the deformation caused by the resin.

The following will describe the invention in the material of the wall element. As a material of the wall element, the photosensitive resin is preferred, because the liquid flow channel can adopt the lithographic process is easily and accurately formed. As a structure material of high mechanical performance required, and the base plate 1 the close contact performance, and is used for ink-resistant performance of the liquid flow passages in the high characteristic of the micro-pattern is the lockmass characteristic need for such photosensitive resin. Our careful studies, it has been found that the required as structure material and the excellent strength, close contact performance and resistance to ink performance, if the epoxy resin is cured at room temperature, it has extremely good marking characteristics.

First of all, the traditional the anhydride or amine obtained compared to harden the material, to harden the material leaves positive polymerization of the epoxy resin having a high cross-linking density (high Tg), as a result, the construction material as required by the characteristics of the very good.

Furthermore, through the use of epoxy resin cured at room temperature, mixture of the cationic polymerization initiator and the polymerization of the epoxy resin of the diffusion is suppressed, so as to obtain very good marking precision and shape.

When the such as the movable part 6 of the cantilever as shape pipe accessory is set up on the surface, by trying to the spin coat spreads high viscosity of the resin in the resin diffusion may be bending the valve member. However, this embodiment is used as the above-mentioned material of the negative photosensitive epoxy resin adhesive is relatively low, therefore, when the resin coating by spin coating, the valve member bending is not possible, in addition, this kind of resin is also able to flow into the element substrate 1 and the mobile part 6 a gap between. At the same time, we have also discovered that in order to prevent the deformation of the movable member and in order to get the surface of the hardened resin painting light smooth, one with sufficient a large amount of solid components and easy plattenning the material, in particular comprising a 50% or more solid component of the material is preferably a photo-hardening resin material as described above. Furthermore, we also found that in order to be able to use spin coating, resin should be preferably relatively small molecular weight, specifically an average molecular weight of 10000 or less.

In the spin-coating step, the outer circumference part of the air resistance of the excessive resin coating material can not be very good left, the outer peripheral portion of the disc tends to be larger. The larger the thickness of the coating layers on the precision will result in a very big problem. Therefore, in this embodiment, as shown in Figure 10A and 10B shown in the, by the acetone and IPA (isopropyl alcohol) mixed solution of dissolved resin coating material 553 is dropping to the disk 550 part of the circumference of the (side cleaning step), thus the resin coating film 551 is improved the uniformity of the thickness of the

Subsequently, such as table 1 is shown in, the use of a hot plate at 90 degree Celsius for epoxy resin 100 for 5 minutes of pre-baking, after this, through the exposure device (MPA600), epoxy resin 100 into a predetermined pattern is exposed, exposure to 2 [J/cm2] (see Figure 8C).

As a negative photosensitive resin with hardened photo-hardening resin of the exposure portion, it is not the exposure part not hardened. Therefore, in the above-mentioned exposure step, only forms a flow channel and the side wall 9 a portion of the cover 101 exposure, and the other part is not exposed. Inflow located in the movable part 6 and the element substrate 1 in between the resin as a result of the light being cover 101 interdiction therefore, there is no hardening. At the same time, through the above-mentioned a certain time, the resin application steps and side cleaning step, the movable member 6 in its own base plate and the element 1 a gap is formed between the part is formed, the plane of the wall element can be formed (as shown in Figure 11). Furthermore, already flows into the negative of the movable part 6 and the element substrate 1 in between the negative resin not hardened, can be simply removed. In Figure 11 in, label 150 has shown the disc.

Furthermore, through the use of hot plate, the photosensitive resin of the PEB is implemented, the implementation conditions 90 degree Celcius, 5 minutes. Through adopting the above-mentioned developing solution for etching, after this, in the 200 degree c for 1 hours of the host dries. In (step the host dries) light hardening after the resin plattenning the step of implementing, if as mentioned above the baking temperature is equal to or higher than the melting point of the resin (the above-mentioned resin is 90 degree Celsius) and implementation of the horizontal flow, will effectively improve the precision of the resin board.

As shown in Figure 8D and 9C shown, through the above-mentioned steps, the element substrate 1, in the element substrate 1 on the surface of, the movable member 6 and the flow passage side wall 9.

After this, the element substrate 1 is cut into a predetermined shape, the top plate 3 and the orifice 4 through cementation company connected to the element substrate 1 is. Through the implementation of the above-mentioned condition the host dries , flow passage side wall 9 on the height of the can achieve the accuracy of ± 0.5 microns or less, therefore, when the connection pre-board 3 time, applied to the flow passage side wall 9 on the upper surface of the thickness of the adhesive layer can be made smaller.

In the above-mentioned manufacturing the liquid discharge head of the present invention, is arranged on the substrate by the exposure of the wall members of the after-hardening negative photosensitive resin forming, the composed of inorganic material such as SiN or SiO film formed with the wall member, the preparation time can be shortened, and unlike the existing wet, dozens of microns in thickness can be obtained of the thin film.

Furthermore, the melting point is equal to or higher than the hardening temperature of the resin, the curing of the resin, on the upper surface of the wall member to the level of flow is highly accurate, it is not necessary to through the later polishing step such as flattened on the upper surface of the wall member, the preparing step can be simplified, the production cost is also reduced.

In the text, in one example described, in this example the invention is applied to the liquid discharge head in, the invention not only can be used in the above-mentioned liquid discharge head, and usually can also be used in micro-mechanical device, the micro-mechanical device with such as a 1st in the base plate, in the 1st on the surface of the substrate by the wall member form flow channels, the micro-mechanical device also has the substrate support 1st fixed and a movable part, its one end is a free end, on the base plate in the 1st in the liquid flow passage, the movable member with the free end of the 1st there is a gap between the substrate, the micro-mechanical device also has one of the wall members on the upper surface of the base plate is connected with the 2nd.