Plate heat exchanger

Technical Field

The present invention relates to a method for the production of the plate-type heat exchanger, and a plate-type heat exchanger produced by the method.

Background Art

Different method can be used for connecting with a high melting temperature alloy. In this context, "high-melting temperature" is higher than 900 °C the melting temperature. Welding is a commonly used method, wherein the parent metal with or without the melted together with additional material, namely, the product to be cast through the melting and re-solidifying produce.

Brazing is used for by introducing higher than 450 °C liquid metal to a melting of the solid metal in close proximity to the process. When choosing the suitable filler alloy, and to clean the surface of parent metal brazing alloys after heating to keep clean during the flow temperature, and the joint design of the use of a suitable, generally lead to the brazing joint. During the process, the brazing filler is higher than 450 °C melting under the temperature, namely, to be connected to the parent metal of lower than the liquidus temperature of the temperature of the liquid interface. In order to achieve brazing, liquid interface should have good wetting and flow.

Soldering is one of the two or more metal objects through the filler metal (i.e., the solder) melting and flow into the joint to the process, lower than the melting point of the solder is provided with a work piece. In the brazing, the filler metal is melted under higher than the temperature of the solder, but not melted workpiece metal. Soldering and brazing of the difference between the melting temperature of the filler alloy-based. 450 °C usually used as the temperature of the soldering and the brazing between the actual division.

Generally, brazing brazing filler applied the procedure to be connected to the parent metal of the gap between the contact or space. During the heating process, brazing filler melting and filling the gap between the to be connected. In the brazing process, there are three main stages, wherein the 1st stage referred to as physical stage. Physical stage includes brazing filler wetting and flow. 2nd stage temperature under the given link usually occur. During this stage, the interaction of the presence of solid - liquid, generally this is the mass transfer to realize. In this stage, the liquid filler metal closely adjacent parent metal volume of dissolution, or reaction with the filler metal. At the same time, a small amount of elements from the liquid phase to the solid matrix in the metal infiltration. The components of the joint in the area of the re-assigned to the change of the components of the filler metal, and sometimes lead to begins to solidify the filler metal. A 2nd overlap with the final stage of the final joint is characterized in that the formation of the micro-structure, and in the joint development of the setting and cooling period.

For connecting two metal parts (precursor material) for the transition another method of liquid phase diffusion connection (coupling TLP), wherein the diffusion from the interlayer of the suppressing element in the melting point of the temperature of the metal part into the crystal grain boundaries in the crystal lattice and is. Solid-state diffusion process joint surface then lead to changes in the components, and is not similar to the temperature that is lower than the matrix interlayer of the melted under the temperature of the material. Therefore, a thin layer of liquid along the interface by diffusion to the metal part in the lower than any one of the temperature of the melting point of the lower forming the joint. Coupling to the temperature decrease of the solidification of the melt, and by keeping the phase can then be under the temperature reaching a certain time period in the metal part to the proliferation.

Connecting method such as welding, brazing and TLP coupling successfully connecting the metal part. However, welding has its limitations, because it can be very expensive, or even impossible, in a large number of joint is difficult to produce the large number of joint. Brazing also has its limitations, for example, it can be difficult to properly determine the most suitable for the application or even the filler metal. TLP coupling-in its connecting different metal is advantageous, but has its limitations. For example, is often difficult to find suitable interlayer, and this method is not easy to be suitable for filling large gap in the case of relatively large or in the fitting will be formed to produce the joint.

Therefore, in the selection of a certain connecting method, relates to many factors. Also crucial factor for connecting metal part of the joint cost, productivity, safety, and nature of the processing speed, the connecting and after the nature of the metal part itself. Despite the advantages of the aforesaid method with them, but still needs to be a connection method is used as the method of the supplementary, especially if we consider the like cost, productivity, safety factors and processing speed.

Content of the invention

Aim of the invention is to improve the technical and the prior art above. Specifically, in aims to provide a simple and reliable manner the plate-type heat exchanger producing permanent link at the same time between the plates a plate-type heat exchanger method of generating strong joint.

In order to solve these purposes, provides a permanent connection for the production method of the plate-type heat exchanger, which comprises a higher than 1000 °C the solidus temperature of a plurality of metal heat interchanger board. The side plate is arranged on each other, and form a plate package, the plate package is used for 1st 1st plate of the medium used for the gap and 2nd 2nd plate gap of the medium, the gap and the 2nd plate 1st plate gap is provided in order to interlock the plates in the order. Each heat exchanger plate comprises a heat transfer area and the edge area, the edge area includes heat transfer area extending around the bending edge. Formed on the surface of the plate, and the convex shape of the 1st, 2nd and plate is formed on the surface of a concave shape, and the heat transfer region includes the waveform of the protrusion and recess. Plate by the curved edge of the waveform and to provide pressing. The method comprises the following steps:

Inhibiting ingredient the melting of the applied to the 1st 1st on at least a portion of the convex surface, melting inhibiting component comprising

· Melting inhibition component, which comprises at least 25 wt % phosphorus and silicon, is used for reducing the melting temperature of the 1st plate, and

· Alternatively, the inhibiting component used for melting is applied to the adhesive component on the surface of the 1st,

forming group through the plate stack to the 2nd 1st 2nd with the concave surface of the plate, and the plate is arranged on the convex surface of the 1st contact inhibiting the melting of the components,

2nd 1st plate and the panel is heated to higher than 1000 °C temperature, the convex surface of the 1st 1st plate by this melting, melting the surface layer of the plate 1st, and together with the melting inhibition component, a molten metal layer, in the 1st between the plate and the 2nd plate meshes with the 2nd plate contact, and

level coagulation allows the molten metal, so that between the plates in the plate package is obtained at the point of contact of the joint, and such that the bend is formed on the edge of the plate in the plate package the close matching between the curved edge.

Metal can have, for example of iron-base, nickel-base and cobalt in the form of a metal alloy, because they typically have higher than 1000 °C the solidus temperature. Plate is not pure aluminum or aluminum-based alloy, has no higher than 1000 °C the solidus temperature. The metal in the metal sheet or even metal plate itself can be referred to as "parent metal" or "precursor material". In this context, "iron-based" alloy as the iron has all elements in the alloy the maximum weight percentage (wt %) alloy. The corresponding also applies to the case of nickel-based, cobalt-based, chromium-based and aluminum-based alloy.

Such as indication of the, melting inhibiting ingredient comprises at least one component, the component melted. Optionally, melting suppression ingredients comprising an adhesive component. At least 1st plate helps to reduce the melting temperature of the melting of all of the substances inhibiting ingredient as melted or part of a portion of the component. At least 1st reducing the melting temperature of the plate is is not melted into the "combined" component makes its form, for example, a paste, coating or slurry inhibiting the melting of the part of the component as a part of the binder component. Of course, melting inhibition component can include other components, such as, a small amount of filler metal. However, such filler metal melting inhibiting component can not be said that the 75 wt % or more, because melting inhibition component of at least 25 wt % including phosphorus and silicon. If the filler metal in the melting suppressing ingredient, the inhibiting component is always a part of the melt.

In this context, "phosphorus and silicon" the calculation of mean as set forth wt % of the phosphorus component in the melted and silicon and. Here, the weight percentage of the mean wt %, the mass fraction is multiplied by 100 to determine the. As known, the quality of the substance component in the score for the quality of the substance concentration (component in the density of the material) the ratio of the density of the component. Therefore, for example, at least 25 wt % of the phosphorus and silicon mean 100g in the sample melted component, the total weight of the phosphorus and silicon is at least 25g. Obviously, if adhesive component comprises inhibiting component in the melt, in the melting suppressing ingredient wt % phosphorus and silicon can be less than 25 wt %. However, at least 25 wt % phosphorus and silicon is always present in the melting suppressing component, also includes as its if the instructions can include any filler metal, namely, filler metal is melted is always regarded as a part of the ingredient.

"Phosphorus" includes melting in inhibiting component of all phosphorus, comprising elemental phosphorus in the phosphorus compound and phosphorus. Correspondingly, "silicon" in inhibition component comprises melting all of the silicon, which comprises elemental silicon and silicon in the silicon compound. Therefore, phosphorus and silicon in the melting of the two inhibiting component may be made from various phosphorus and silicon compound expressed in the phosphorus and silicon.

Clearly, melting suppression ingredients which are very different from the conventional hard brazing material, with respect to the melting-inhibiting substances because of their like phosphorus and silicon with more filler metal. Generally, brazing material has less than 18 wt % phosphorus and silicon.

The advantage of this method is characterized in that the, filler metal or even excluded can be reduced, and it can be applied to metal plate made of a different material. Of course, the components of the melt can also be used for inhibiting the 2nd metal plate.

Phosphorus can stem from elemental phosphorus and is selected from the following compounds of the at least one phosphorus compound of any one of phosphor: phosphorization manganese, iron phosphide and phosphoride nickel. Silicon can stem from elemental silicon and is selected from the following compounds of the at least one in the silicon of the silicon compound is any one of: silicon carbide, silicon boride and ferro-silicon.

Melting inhibiting component can include at least 25 wt %, at least 35 wt % and at least 55 wt % of any one of the phosphorus and silicon. This means that, if the presence of any filler metal, it is less than 75 wt %, less than 65 wt % or less than 45 wt % is present in an amount of from.

A phosphorus compound and phosphorus and silicon content of at least 10 wt %. This means that, when the melting inhibition component comprises at least 25 wt % phosphorus and silicon, the melting suppressing component includes at least 2.5 wt % phosphorus. Melted silicon can form phosphorus and silicon content of a compound of at least 55 wt %.

Melting inhibiting component can include less than 50 wt % of the metal element, or less than 10 wt % of the metal element. Such metal elements are correspondent to the statements above "metal filler". Such a small amount of metal element or metal filler composition with the melted, for example, completely different from the known brazing components, because they include at least 60 wt % of the metal element. Here, for example, "metallic element" includes all transition metal, which is in the zone d in the periodic table of the elements, which comprises a of the periodic table 3 to 12 groups. This means that for example, (Fe), nickel (Ni), cobalt (Co), chromium (Cr), Mo (Mo) for "metallic element". "Metallic element" is not the element is an inert gas, a halogen and the following elements: boron (B), carbon (C), silicon (Si), nitrogen (N), phosphorus (P), arsenic (As), oxygen (O), sulfur (S), selenium (Se) with tellurium (Tu). It should be noted that, for example, if the phosphorus phosphorization manganese from the compound, the compound is a metal element manganese part, which comprises the metal element, the metal element in one embodiment and should be smaller than 50 wt % and in the other embodiment is smaller than 10 wt %.

Panel can be including 0.3 to 0.6 mm thickness, and the melting suppressing ingredient can then be included in the application of the surface of the metallic part 1st eachmm²applied average 0.02 to 1.00 mg phosphorus and silicon. In each of the surface of the panel is 1stmm²applied average 0.02 to 1.00 mg phosphorus and silicon including, for example, by any of the applied indirectly 2nd plate, for example, from 2nd plate is transmitted to the 1st phosphorus and silicon of the board. Therefore, referred to herein as long as the phosphorus and silicon to melting of the surface layer of the 1st plate, it must be not need to directly applied to the metal part of the 1st.

1st plate can include 0.6 to 1.0 mm thickness, and the melting suppressing ingredient can then be included in the application of the 1st each of the surface of the panelmm²applied average 0.02 to 1.00 mg phosphorus and silicon. As previously, by the 2nd plate applied also includes indirect "applied".

1st plate can include greater than 1.0 mm thickness, and the melting suppressing ingredient can then be included in the application of the 1st each of the surface of the panelmm²applied average 0.02 to 5.0 mg of phosphorus and silicon.

The application of the melted components can be carried out before the pressing of the plate. The application of the melted components can be used as alternative of the board is carried out after pressing.

Melting inhibiting ingredient can also be applied to the plate stack comprising after forming group melted through the suspension component to a plate package.

The application of the composition can be melted by means of a silk-screen printing or by sputtering on the cutting structure to the coiled material.

1st surface can have greater than from said 1st on a surface portion of the area of the contact point of the area of the limit, so the molten metal in the metal layer formation while allowing flow to the contact point of the joint. Such flow is typically caused by the capillary action.

The area of the surface of the contact point can be defined at least of the area of the 3 times. The area of the surface can be even larger (or point of contact is relatively small), as defined by the contact point of the area of the at least 10, 20 or 30 times. Refer to the area of the surface of molten metal from its flow to form the area of the surface of the joint.

The area of the surface of the joint can be of the cross-sectional area at least 3 times or at least 10 times. The area of the surface can be even larger (or joint is relatively small in the cross-sectional area), such as the limit on the area of the contact point of at least 6 times or 10 times. Joint can be defined as the cross-sectional area of the joint has its minimum extension (sectional area) of the joint at the position of the cross-sectional area across the plane a, the plane parallel to the surface of the contact point is located.

Plate may include any one of the following:

I)>50 wt % Fe, <13 wt % Cr, <1 wt % Mo, <1 wt % Ni and<3 wt % Mn;

Ii)>90 wt % Fe;

Iii)>65 wt % Fe and>13 wt % Cr;

Iv)>50 wt % Fe, >15.5 wt % Cr and>6 wt % Ni;

V)>50 wt % Fe, >15.5 wt % Cr, 1 - 10 wt % Mo and>8 wt % Ni;

Vi)>97 wt % Ni;

Vii)>10 wt % Cr and>60 wt % Ni;

Viii)>15 wt % Cr, >10 wt % Mo and>50 wt % Ni;

Ix)>70 wt % Co; and

X)>10 wt % Fe, 0.1 - 30wt %Mo, 0.1 - 30wt %Ni and>50 wt % Co.

The above implies the 1st and 2nd sheet may be made from plate large number of different alloy. Obviously, more common in the industry such as their examples, as other remaining metal or element.

According to another aspect, provides a plate type heat exchanger, which comprises a higher than 1000 °C the solidus temperature of a plurality of metal heat interchanger board. The side plate is arranged on each other, and form a plate package, the plate package is used for 1st 1st plate of the medium used for the gap and 2nd 2nd plate gap of the medium, the gap and the 2nd plate 1st plate gap is provided in order to interlock the plates in the order. Each heat exchanger plate comprises a heat transfer area and the edge area, the edge area includes heat transfer area extending around the bending edge. Formed on the surface of the plate, and the convex shape of the 1st, 2nd and plate is formed on the surface of a concave shape, and the heat transfer region includes the waveform of the protrusion and recess. Plate by the curved edge of the waveform and to provide pressing. Plate-type heat exchanger according to the above-mentioned methods or in fact construct of any one of the production.

According to another aspect of the invention, plate-type heat exchanger includes the joint and the 2nd plate connecting the 1st plate, plate has higher than 1000 °C solidus temperature of the, wherein the joint comprises at least 50 wt % of the metal element, the area of the joint from the wrapped (A1) obtained, and to provide the 1st plate and the 2nd plate in any one of a part of.

Method, products and melting the different objectives of suppressing ingredient, features, aspects and advantages of the following detailed description and from the evident from the Figure.

Description of drawings

With reference to the illustrative embodiment will now be described by with the embodiment of the present invention, in the illustrative drawings:

Figure 1 is the side view of the plate type heat exchanger of the prior art,

Figure 2 is the plane view of according to fig. 1 of the plate heat exchanger,

Figure 3 is the cross-sectional view of according to fig. 1 of the plate heat exchanger,

Figure 4 is the flowchart of the method according to the invention used for connecting of the plate in the plate type heat exchanger method,

Figure 5 shows the two metal is used for describing how a portion of which may be connected in a certain number of examples of the pressing of the plate,

Figure 6 for Figure 5 is shown in the plate and the flat joint between the photo of the cross section of the,

Figure 7 shows the chart, wherein the measured width is drawn an along with melting joint of the application change inhibiting ingredient, including the trendline,

Figure 8 - 12 are shown in the SEM (scanning electron microscope) in the cross-section of the joint of the study, and the position of the electronic scan.

Mode of execution

Reference with photos, discloses a plate-type heat exchanger, respectively, see Figure 1, 2 and 3. Plate-type heat exchanger 1 includes a plurality of heat exchanger plate 2, arranged in the side of each other, is used for forming and having 1st 1st medium used for space of the plate 4 and is used for 2nd 2nd plate gap of the medium 5 the plate package 3. 1st plate gap 4 and the 2nd plate space 5 is arranged in the sequence in order to interlock plate package 3 in, namely, every other plate 1st plate gap space 4, and every second plate gap is gap 2nd plate 5, see Figure 3.

Figure 1 - 3 of the plate heat exchanger is disclosed in 1 permanently connected to each other with the heat exchanger plate 2. Outermost two heat exchanger plate can be formed in the end of the end plate or by replacement.

Plate-type heat exchanger 1 also includes an inlet and outlet channel 6 - 9, they are arranged to convey to the 1st the 1st medium space of the board 4 in, the and from its transmission, and the 2nd 2nd plate gap is transmitted to the medium 5 in, the and from its transmission. Each heat exchanger plate 2 of the main plane of extension of the extending p, and includes heat transfer area 10 and around the heat transfer area 10 extending edge region 11. Each heat exchanger plate 1 also includes two port hole 12 and 13, which are respectively arranged in the same heat interchanger board 1 of the end of the 1st 1A and heat interchanger board 1 of the end of the 2nd 1B is. The area of port holes 12 and 13 positioned on the edges of the area 11 the inner, and more specifically at the edge regions 11 and the heat transfer area 10 between. The area of each port holes 12, 13 includes at least two port holes 14, with the corresponding inlet and outlet channel 6 - 9 alignment. Each heat exchanger plate 1 also includes a wrap or the curved edge of the outer flange 15. Bent edge or flange 15 is arranged on the outside or form an edge region 11 of the external. The attention is, heat exchanger plate 2 can also be provided with a curved edge 15, along the heat exchanger plate 1 extend along a part of the periphery of the. Therefore, plate 2 is provided with a 1st with convex shape of surface 16 and with a concave shape of the surface of the 2nd 17.

Heat transfer area 10 comprises a tab 18 and the recess 19 of the waveform. Such convex and concave portions can be formed, for example, the ridges and recess or recess.

Plate 2 can be made of, for example, iron-base, nickel-base and cobalt is made of metal alloy, because they typically have higher than 1000 °C the solidus temperature. The plates can not be made of pure aluminum or aluminum-based alloy, has no higher than 1000 °C the solidus temperature. For example, plate typically is made of iron-based, nickel-base and cobalt-base alloy.

Plate 2 of metal or even plate in 2 itself can be referred to as "parent metal" or "precursor material". In this context, "iron-based" alloy as the iron has all elements in the alloy the maximum weight percentage (wt %) alloy. For example, the corresponding situation also applicable to nickel-based, copper-based, cobalt-based, chromium-based and aluminum-based alloy.

With reference to Figure 4, shown is used for linking used for plate-type heat exchanger 1 of the plate 2 the flow chart of the method. Plate 2 can be made from different materials such as mentioned above.

In 1st step 201 in, melting suppression ingredients 20 1st applied to the convex surface of the board 16 on at least a portion of the. Melting inhibiting component 20 can be applied to the convex surface 16 or only a portion of the convex surface 16 on substantially all of the. In the alternative embodiment, the melting suppressing component 20 also can be applied to the plate 2 of the 2nd concave surface 17 on, but then is less than applied to the 1st to the convex surface 16 of the melting on of the amount of the inhibiting ingredient the quantity exerts.

Applying itself can be completed by the conventional techniques, for example, inhibiting ingredient comprises the melting of the binder component by spray, silk-screen printing, rolling or coating, PVD or CVD through, or in the absence of using the adhesive components of the inhibitors to only under the melting point.

Melting inhibiting component 20 includes at least one component, the component melted. Optionally, melting suppression ingredients comprising an adhesive component. At least 1st is helpful to reduce the melting temperature of the metallic part to inhibit the melting of all of the components of the material or part of the recognized as a part of the melting suppressing component. At least 1st reducing the melting temperature of the metal part which is not changed into the "combined" is melted component makes its such as to form a paste, coating or slurry inhibiting the melting of the part of the component as a part of the binder component. Of course, melting inhibition component can include other components, such as, a small amount of filler metal. However, such filler metal melting inhibiting component can not be said that the 75 wt % or more, because melting inhibition component of at least 25 wt % including phosphorus and silicon. If the filler metal in the melting suppressing ingredient, the inhibiting component is always a part of the melt.

In this context, "phosphorus and silicon" the calculation of mean as set forth wt % of the phosphorus component in the melted and silicon and. Here, the weight percentage of the mean wt %, the mass fraction is multiplied by 100 to determine the. As known, the quality of the substance component in the score for the quality of the substance concentration (component in the density of the material) the ratio of the density of the component. Therefore, for example, at least 25 wt % of the phosphorus and silicon mean 100g in the sample melted component, the total weight of the phosphorus and silicon is at least 25g. Obviously, if adhesive component comprises inhibiting component in the melt, in the melting suppressing ingredient wt % phosphorus and silicon can be less than 25 wt %. However, at least 25 wt % phosphorus and silicon is always present in the melting suppressing component, also includes as its if the instructions can include any filler metal, namely, filler metal is melted is always regarded as a part of the ingredient.

"Phosphorus" includes melting in inhibiting component of all phosphorus, comprising elemental phosphorus in the phosphorus compound and phosphorus. Correspondingly, "silicon" in inhibition component comprises melting all of the silicon, which comprises elemental silicon and silicon in the silicon compound. Therefore, phosphorus and silicon in the melting of the two inhibiting component may be made from various phosphorus and silicon compound expressed in the phosphorus and silicon.

Clearly, melting suppression ingredients which are very different from the conventional hard-soldering material, because of their relative to the melting-inhibiting substances such as phosphorus and silicon with more filler metal. Generally, brazing material has less than 18 wt % phosphorus and silicon.

The advantage of this method is characterized in that the, filler metal or even excluded can be reduced, and it can be applied to the metal portion made of different materials. It can also be in a wide range of application with the use of, for example, is used for linking heat transfer plate or of any suitable metal object, its in other cases such as by welding or a conventional hard-soldering connection.

In the present invention in another embodiment, the melting suppressing component 20 is applied to the subsequent cutting board 2 on the coiled material.

In the following step 202 in, 2nd plate 22 of concave 2nd 17 in 1st plate 21 of the convex surface 1st 16 on the contact point on the 23 ingredient for reducing and melting at 20 contact. 2nd 1st plate and through the plate stack, the plates 3. This can be through the use of conventional automatic manufacturing system to either manually or automatically. Of course, and the component 20 also can be applied to the 2nd plate 22 2nd of the concave 17 is.

Phosphorus can stem from elemental phosphorus and is selected from the following compounds of the at least one phosphorus compound of any one of phosphor: phosphorization manganese, iron phosphide and phosphoride nickel. Silicon can stem from elemental silicon and is selected from the following compounds of the at least one in the silicon of the silicon compound is any one of: silicon carbide, silicon boride and ferro-silicon.

Melting inhibiting component can include at least 25 wt %, at least 35 wt % and at least 55 wt % of phosphorus and silicon. This means that, if the presence of any filler metal, it is less than 75 wt %, less than 65 wt % or less than 45 wt % is present in an amount of from.

A phosphorus compound and phosphorus and silicon content of at least 10 wt %. This means that, when the melting inhibition component comprises at least 25 wt % phosphorus and silicon, the melting suppressing component includes at least 2.5 wt % phosphorus. Melted silicon can form phosphorus and silicon content of a compound of at least 55 wt %.

Melting inhibiting component can include less than 50 wt % of the metal element, or less than 10 wt % of the metal element. Such metal elements are correspondent to "metal filler" described above. Melting suppression ingredients 20 of such a small amount of metal element or metal filler with, for example, known brazing component different, because they include at least 60 wt % of the metal element. Here, for example, "metallic element" includes all transition metal, which is in the zone d in the periodic table of the elements, which comprises a of the periodic table 3 to 12 groups. For example, this means that the iron (Fe), nickel (Ni), cobalt (Co), chromium (Cr), Mo (Mo) for "metallic element". "Metallic element" is not the element is an inert gas, a halogen and the following elements: boron (B), carbon (C), silicon (Si), nitrogen (N), phosphorus (P), arsenic (As), oxygen (O), sulfur (S), selenium (Se) with tellurium (Tu). It should be noted that, for example, if the phosphorus phosphorization manganese from the compound, the compound is a metal element manganese part, which comprises the metal element, the metal element in one embodiment and should be smaller than 50 wt % and in the other embodiment is smaller than 10 wt %.

Plate 2 can have 0.3 to 0.6 mm thickness, and the melting suppressing component 20 the application 201 can then be included in the 1st plate 21 of the convex surface 1st 16 everymm²applied average 0.02 to 1.00 mg phosphorus and silicon. In 1st convex surface 16 on the surface of everymm²applied average 0.02 to 1.00 mg phosphorus and silicon including, for example, via the 2nd concave 17 of any applied indirectly, for example, from 2nd plate 22 is transmitted to the 1st plate 21 phosphorus and silicon. Therefore, referred to herein as long as the phosphorus and silicon plate 1st still help 21 1st of the convex surface 16 of the surface layer of the melt, it must not be directly applied to the 1st plate 21 is.

Plate 2 can have a 0.6 to 1.0 mm thickness, and the melting suppressing component 20 can then be included in the application of the plate 2 on the surface of everymm²applied average 0.02 to 1.00 mg phosphorus and silicon.

Plate 2 can have greater than 1.0 mm thickness, and the application of the melted components can then be included in the plate 2 on the surface of everymm²applied average 0.02 to 5.0 mg of phosphorus and silicon.

Melting suppression ingredients can be applied to the contact point with greater than the 23 defined on the surface of the area of the area, so the molten metal of the metal layer when forming the joint while allowing the flows to the point of contact. Such flow is typically caused by the capillary action.

Melting component can be used in the area of the surface of the contact point 23 defined at least of the area of the 3 times. The area of the surface can be even larger (or point of contact is relatively small), as defined by the contact point of the area of the at least 10, 20 or 30 times. Refer to the area of the surface of molten metal from its flow to form the area of the surface of the joint. Of course, can be applied to the components and the plate 1st 21 all of the 1st convex surface 16 of the upper.

The area of the surface of the joint can be of the cross-sectional area at least 3 times or at least 10 times. The area of the surface can be even larger (or joint is relatively small in the cross-sectional area), such as the limit on the area of the contact point of at least 6 times or 10 times. Joint can be defined as the cross-sectional area of the joint has its minimum extension (sectional area) of the joint at the position of the cross-sectional area across the plane a, the plane parallel to the surface of the contact point is located.

1st plate 2 can include any one of the following:

I)>50 wt % Fe, <13 wt % Cr, <1 wt % Mo, <1 wt % Ni and<3 wt % Mn;

Ii)>90 wt % Fe;

Iii)>65 wt % Fe and>13 wt % Cr;

Iv)>50 wt % Fe, >15.5 wt % Cr and>6 wt % Ni;

V)>50 wt % Fe, >15.5 wt % Cr, 1 - 10 wt % Mo and>8 wt % Ni;

Vi)>97 wt % Ni;

Vii)>10 wt % Cr and>60 wt % Ni;

Viii)>15 wt % Cr, >10 wt % Mo and>50 wt % Ni;

Ix)>70 wt % Co; and

X)>10 wt % Fe, 0.1 - 30wt %Mo, 0.1 - 30wt %Ni and>50 wt % Co.

The above implies the plate 2 can be made of a large number of different alloy. Obviously, more common in the industry such as their examples, as other remaining metal or element.

In a next step 203 in, plate 3, heated to above the 1000 °C temperature. Accurate temperature can be found in the following examples. During the heating, 1st plate 21 of the convex surface 1st 16 melting, and forming a surface layer 24, and together with the melting inhibition component, forming molten metal layer 25, its in 1st plate 21 and the 2nd plate 22 of the contact point between the 23 with the 2nd plate 22 of convex 2nd 17 contact. In this all occurs, the melting of the metal of the metal layer of the contact point 23 flow.

In the final step 204 in, allows the molten metal layer 25 solidification, so that the joint 26 in the plate package 3 in the contact point between the plates 23 obtains, and the bent edge 15 forming a plate package 3 in the plate 2 of the bending edge 15 is closely matched between the, i.e., flows to the point of contact 23 of the metal solidification. Inhibiting ingredient through the 20 applied 201 in only plate 2 of the convex surface of the 16 upper, surprising to discover, plate 2 the occurrence of the change of the shape of a, so that the plate 2 of the convex become even more convex, i.e., bent edge 15 to produce the plates 3 and the very close and tightly attached to each other with, this becomes than the known brazing technologies in more closely. In fact, the bending edge 15 is higher than that of the original distance between the closer. By contrast, if the melting suppressing ingredient 20 only applied to the concave surface 17 is, the gap between the bent edge 15 increase between. The changes in shape to the surface of the alloy in the mixture occurs when the, also means that the surface in the presence of the alloying and compression stress. If melting suppression ingredients applied to the convex surface 16 and a concave surface 17 on the two, then there will be a in the two in the surface of the compression stress, lead to the plate 2 and a plate package 3 the increase of the fatigue strength.

Solidification typically include reduce the temperature to the normal room temperature. However, solidified before the temperature can also be reduced, the component in the joint region (phosphorus and silicon) the physical process of occurring during the redistribution.

The metal part of the to be dependent on the shape of the link, which is applied at the component melted area of the subsequently formed can be approximately equal to the area of the joint.

Is derived from the above described, although described and shown various embodiments of the present invention, but the invention is not limited to this, but can also be defined in the following claim to the theme of other ways within the scope of the implementation. Various melting inhibiting ingredient can also be used with various metal of the metallic part combined. For example, melting suppression ingredients (mixture) A3.3 the 316 steel into the metal portion of the combination.

Examples

Now a certain number of experimental and examples used for describing suitable material used for board, melting suppression ingredients 23 ingredient, the ingredient should be used few melted, the temperature for heating, such as heating how long should be conducted. Therefore, the results of these experiments and examples for the entity, like plate 1st, 2nd plate, melting suppression ingredients, contact point, joint and other, namely, all the entities can be incorporated into the following experimental and examples described together with the corresponding-related characteristics. In the below, melting suppression ingredients referred to as "mixture". The metal sheet can be referred to as "parent metal".

Test a certain number of suitable for melting suppression ingredients, i.e., melting point temperature suppression ingredients. Melting inhibit the active ingredient in the composition is phosphorus (P). Phosphorus compound is selected as a phosphorus source. Compound includesFe₃P, NiPandMn₃P₂, whereinMn₃P₂to MnP andMn₂Pmixture. Also can only use, include other compounds of phosphorus, they only need to be relative to their usefulness and with respect to their provided results, to such as forFe₃P, NiPandMn₃P₂completed and the test similar manner to that outlined below.

Also known as iron phosphideFe₃Pfrom AlfaAesar assurers of the conventional compound, the (ChemicalAbstractsService) number CAS 12023 - 53 - 9, and MDL MFCD00799762 (MolecularDesignLimited) number.

Also known as the phosphorization manganeseMn₃P₂from AlfaAesar assurers of the conventional compound, the (ChemicalAbstractsService) number CAS 12263 - 33 - 1, and MDL MFCD00064736 (MolecularDesignLimited) number.

Also known as the phosphorous nickel is plated NiP to be connected to the metal part of the conventional compounds on. The metal part of the to be connected, also known as a basis metal or basis material. Electroplating through the implementation of conventional phosphoride nickel plating method to complete, such as by, for example Company BrinkFornicklingsfabrikenAB (Norrkoping, Sweden) completed.

In some of the examples, the use of Si or silicon. Silicon is obtained from conventional compounds AlfaAesar Company, referred to as "silicon powder, crystal, -325 mesh, 99.5% (based on metal)", wherein the CAS 7440 - 21 - 3 and for the MDL MFCD00085311.

In view of the compound when the atomic component, through the application of atomic weight and through the use of conventional computing technology, may determine:

Fe₃Pincluding 16 wt % of P (phosphorus), andMn₃P₂including 27 wt % of P. When the nickel plating, about 11 - 14wt % NiP of in included in the P layer.

The adhesive used for theFe₃PandMn₃P₂applied to the metal part to be connected. Adhesive (polymer and solvent) by the name nicorobrazS - 20 WallColmonoy ([...] - 20) the sale of the adhesive. Samples of the adhesive on the metal plate, and the 22 °C lower drying up to 24h. The weight of the sample before drying for 0.56g, and after drying as 0.02g. Therefore, 3.57 wt % adhesive is left after drying the component. Preparing molten suppression ingredients, whereinMn₃P₂and Si form fusion inhibition component (melting point temperature inhibition component), and wherein the adhesive [...] - 20 form the adhesive component. By first preparing theMn₃P₂and Si mixed and then by adding and mixing adhesive [...] - 20 to complete. Preparation with different Si ingredient for reducing the melting of the two variants, calledA1Mn₃P₂(A1)andB1Mn₃P₂(B1),as shown in table 1 is shown in.

Table 1

In Figure 5 the, component A1 and A2 is applied to the stainless steel type 316L (grade of SAE) and is provided with 42 mm the diameter of the discoid of the test-piece.

In each of the test specimen is positioned on another of different material (SAE grade) 254SMO. The another member in Figure 5 is shown in, and is provided with a circular pressure plate 150 form, the diameter thereof to 42 mm and has a 0.4 mm thickness. Pressure plate 150 has two pressure bar v and h, it is about 20 mm long. When the has Liangeven on the member is arranged, in the form of a contact point, wherein member 150 by liang Dieven of the other.

Member (namely, discoid member and the pressure plate) known as the sample, and a number of samples used for each sample in the different temperature heat treatment in a vacuum up to 2 hours. Table 2 shows the composition of the few used for sample.

For sample A1: 1 to A1: 3 and sample B1: 1 to the B1: 3, the heat treatment including the sample under vacuum 1120 °C to the temperature of the 2 hours.

For sample A1: 4 to the A1: 6 and sample B1: 4 to the B1: 6, the heat treatment including the sample under vacuum 1140 °C to the temperature of the 2 hours.

A1 indicates that the ingredientA1Mn₃P₂, and B2 indicates that the ingredientB1Mn₃P₂. In the A1 or B2 after indicating the number of different samples in table 2 present. In the table, the weight of the sample, which comprises melting inhibition component of the weight of the weight of and dry binder component.

Table 2

After the heat treatment, allowing the sample to cool to room temperature (22 °C), and two samples observed along the pressing plate 150 is connected to the length of the beam, i.e., sample along the link. Samples at the two sections cut across the joint, and each joint in its most wide sector X is measured, this in Figure 6 is shown in. Results in table 3 are presented in, and in Figure 7 shown in the chart, wherein the joint is drawn an along with melting the width of the application change inhibiting ingredient.

Table 3

Then the joint to carry out metallurgical research. Through the analysis of the so-called sEM - eDX in to complete the cutting section of the joint, sEM - eDX X-ray detector is provided with a conventional and commercial of scanning electronic microscope. Figure 8 shows the used for sample A1 - 6 the position of the three measurement, and table 4 shows the result of the measurement.

Table 4

Research has shown the joint comprises at least 90 wt % of the metal, the heating before the metal part and the 2nd 1st in the metal part a part of any one of, namely, part of the sample. Because the Mn and P together represent less than 2.2 wt %, this can be easily confirmed.

Also the sample B1 - 6 a similar study. Figure 9 shows the used for sample B1 - 6 the position of the three measurement, and table 5 shows the results of the measurements.

Table 5

Research has shown the joint comprises at least 90 wt % of the metal, the heating before the metal part and the 2nd 1st in the metal part a part of any one of, namely, part of the sample. Because the Mn and P together represent less than 4.2 wt %, this can be easily confirmed.

In the next test, called 316 with 42 mm of diameter of 316 type stainless steel is applied there are three different melting suppression ingredients (the corresponding member a component) :i) Mn₃P₂;ii)electroplating in 316 NiP on; and iii) together with Si as a melting point of the inhibitors of 316 NiP on. The thickness of the electroplating NiP 50 μm. 0 . 15gSi applied by a conventional coating. Similar to Figure 5 of the 254 type SMO repressers part is arranged on each part. Sample is formed, its in 1120 °C the heat treatment in a vacuum up to 2 hours. Joint formed between the member.

Table 6 is shown for use with 50μmNiP electroplating of the sample of sEM - eDX, the analysis of the cutting section of the joint. Is from the result, the joint comprises at least 20 wt % of the metal, the heating thereof before the piece (metal part 1st) or 2nd element in (2nd metal part) part of any one of a. Figure 10 shows the joint in the position of measurement.

Table 6

Figure 7 shows through the use of used for having 50μmNiP electroplating of the sample of sEM - eDX, the analysis of the cutting section of the joint, wherein the approximate 0.15g of the amount of the applied Si (smearing) on the plating surface. Is from the result, joint compared with the use of the test include more Si metal. The relatively high levels of Si self-test of the test piece is likely to increase in the amount of metal of the joint. Figure 11 shows the joint in the position of measurement.

Table 7

Table 8 is shown for use withMn₃P₂sEM - eDX of the sample, the analysis of the cutting section of the joint. Mn₃P₂[...] - 20 with adhesive 50 wt: 50 wt mixed, however, does not use the Si. To apply the 0.2g amount (after drying in the adhesive component). Is from the result, the joint comprises at least 80 wt % of the metal, before the link is connected to the a portion of the products. Figure 12 shows a spectrum in the 1 position of the measurement.

Table 8