Chamfering-free battery bar, laminated tile battery string and manufacturing method of laminated tile assembly

Mode of execution

To make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail with reference to the accompanying drawings.

The invention provides a manufacturing method of a non-chamfer battery bar.

The utility model provides a monocrystalline silicon battery piece.

To 3 and FIG. 4, the four corners of the single crystal silicon wafer 1 are chamfered, and the single crystal silicon cell sheet 1 includes first middle part 11 and edge part 12, the edge part 12 is located at both sides first middle part 11, and the edge part 12 includes chamfered parts 121 and second middle parts 122 at both ends of 121 middle part second 122.

, Between the edge portion 12 and first intermediate portion 11, a laser scribing region 121 is provided between the chamfered portion second and 122 intermediate portion 13, wherein the first intermediate 11 is also provided with a plurality of laser scribing regions 13.

, The laser scribing region is provided on the front surface and the back surface of the single crystal silicon cell sheet 1.

The width of the laser scribing region 13 plays an important role in the manufacture of the battery bar, and the width of the laser scribing region is not only related to the precision of the cell screen printing apparatus, but also the width of the laser scribing region 13 may function to reduce the series resistance. , When the width of the laser scribing region 13 is 0.2 - 0.8 mm, and the width of the laser scribing region 13 is 0.3 - 0.8 mm, at the accuracy satisfying requirements, the narrower the width of the laser scribing region is narrower, the more the efficiency of the cell can be effectively improved.

It should be noted that at present, the diameter of the single crystal rod is constant, and a single crystal silicon slice with a certain fixed size will have a chamfer. For example, the most M2 single crystal silicon wafers at present have a relatively large chamfer.

The manufacturing method of the monocrystalline silicon battery piece is as follows.

(1) Carries out the pretreatment to the silicon chip, forms the suede of pyramid structure on the silicon chip surface.

(2) Diffuse at the front of the silicon chip to form PN junctions.

(3), Selective laser doping is performed on the surface of the silicon wafer.

(4): The silicon wafer is annealed and oxidized.

Al of (5) on the back of a silicon wafer₂ O₃ Coating film and passivated back surface, and Al₂ O₃ SiN on coating film_x Coating and Al-Zn-Al alloy₂ O₃ Protection.

(6) A laser grooving is carried out on the back of the battery piece.

(7) Carries out the printing of back electrode, back electric field and positive electrode respectively to the silicon chip according to preset shingle pattern.

(8) The silicon wafer is subjected to sintering and photo-regeneration, thereby forming the silicon single crystal cell of the present invention.

Secondly, the monocrystalline silicon battery piece is cut along the laser scribing area by using a laser.

, The single crystal silicon cell sheet 1 is cut along the laser scribing region 13 on the back surface of the single crystal silicon cell sheet 1 with laser, so that damage to the single crystal silicon cell sheet by laser dicing can be reduced.

It should be noted that the cutting depth of the laser plays an important role in the manufacture of the battery bar, and if the cutting depth is too deep, the laser intensity is too large to cause a decrease in efficiency of the battery.

, The cutting depth is 40% - 60%. of the thickness of the monocrystalline silicon wafer, and the cutting depth is 50% Å of the thickness of the monocrystalline silicon wafer.

Thirdly, the monocrystalline silicon cell piece is cracked, and a non-chamfered battery bar and a chamfered battery piece are obtained.

In order to further reduce the damage to the monocrystalline silicon cell sheet by laser cutting, the specific cutting and breaking steps are as follows.

To 5a, a single-crystal silicon cell is cut at a laser scribing region between the edge portions 12 and first using a laser, wherein the cut depth is 11 of the thickness of the single-crystal silicon cell sheet; then, the single-crystal silicon cell sheet is split and 50% - 60% intermediate portion first and the edge portion 11 12 are separated.

To 5b, the secondary cutting lobe is cut first an intermediate portion with a laser along first intermediate portion, wherein the cut depth is 45% - 50% of the thickness of the monocrystalline silicon cell sheet; then, the middle portion of first is split to obtain a plurality of non-chamfered cell strips 21.

To 5c, a cleavage of the edge portion along the laser scribing region between the chamfered portion and second intermediate portion is performed using a laser, wherein the cut depth is 40% - 45% of the thickness of the single crystal silicon cell sheet; then, the edge portion is cracked to obtain a chamfered battery bar 21 and a chamfered battery block 22.

A step-by-step method is adopted to carry out multiple cutting and splitting on the monocrystalline silicon battery piece, the loss caused by the laser cutting and the splitting process on the monocrystalline silicon battery piece is effectively reduced, and the yield and the reliability of the non-chamfered battery bar are improved. In addition, the monocrystalline silicon battery piece can be cut at different depths, so that the production efficiency can be improved, the loss caused by the laser cutting and the splitting process on the monocrystalline silicon battery piece can be further reduced, and the yield and reliability of the non-chamfered battery bar are improved.

It should be noted that the chamfered battery bar 21 produced by the present invention has a rectangular shape for producing a laminated battery string, and the chamfered battery block 22 of the present invention has a chamfered structure, and is used as a conventional battery sheet.

It should be noted that each of the non-chamfered battery bars 21 and the chamfering battery pieces 22 made in the present invention includes a main grid and a sub-grid of the battery, wherein the main grid and the sub-grid may be structures such as straight lines, segments, curves, etc, and the shapes of the laser scribing regions of the present invention may be straight lines or curved lines. Further, a plurality of structures such as spine bones may be provided in addition to the main gate and the subsidiary gate, and the embodiment of the present invention is not limited to the illustrated embodiment.

It should be noted that a non-chamfered battery bar for manufacturing a laminated tile battery string is provided with a front electrode and a back electrode arranged offset so as to meet the manufacturing requirements of the shingle battery string. In addition, the front electrode and the back electrode of the chamfering battery block need to be arranged on the same side so as to meet the packaging requirement of the conventional small module.

When the width of the front main grid of the non-chamfered battery bar 21 is excessively large, the power generation power of the non-chamfered battery bar 21 decreases, and when the width of the front main grid of the non-chamfered battery bar 21 is too small, connection instability and contact resistance of the non-chamfered battery strip 21 21 are too high, and the power and reliability of the laminated battery string can be reduced. , The width of the front main grid of the non-chamfered battery bar 21 is 0.3 - 1.2 mm . and the width of the front main grid of the non-chamfered battery bar 21 is 0.5 - 0.8mm.

When the width of the rear main gate of the non-chamfered battery bar 21 is excessively large, the photoelectric conversion efficiency of the non-chamfered battery bar 21 is decreased, so that the adhesive force between the non-chamfered battery bars 21 21 is reduced and the connection of the non-chamfered battery bars 21 21 becomes unstable and the contact resistance is too high. , The width of the back main grid of the non-chamfered battery bar 21 is 0.2 - 1.5 mm . and the width of the back main grid of the non-chamfered battery bar is 0.7 - 1.0mm.

A corresponding laser scribing region is formed on the front surface and the back surface of the single crystal silicon cell sheet, so that the chamfering battery bar and the chamfering battery block are manufactured.

In addition, a step-by-step method is adopted to carry out multiple cutting and splitting on the monocrystalline silicon battery piece, the loss caused by the laser cutting and the splitting process on the monocrystalline silicon battery piece is effectively reduced, and the yield and the reliability of the non-chamfered battery bar are improved. In addition, the monocrystalline silicon battery piece can be cut at different depths, so that the production efficiency can be improved, the loss caused by the laser cutting and the splitting process on the monocrystalline silicon battery piece can be further reduced, and the yield and reliability of the non-chamfered battery bar are improved.

Furthermore, the front electrode and the back electrode of the non-chamfered battery bar are arranged in a staggered manner so as to meet the manufacturing requirements of the laminated tile battery string.

Furthermore, the width of the front main grid and the back main grid of the non-chamfered battery strip is set so as to improve the adhesive force of the non-chamfered battery bar, reduce the contact resistance of the laminated tile battery string, and improve the power and reliability of the solar battery string.

, The invention further provides a manufacturing method of the shingle battery string.

Conductive glue is coated on the back main grid of the non-chamfered battery bar of the invention.

A non-chamfered battery bar coated with a conductive paste is laminated.

The laminated non-chamfered battery bar is heated and cured to obtain a laminated tile battery string.

, Conductive glue is printed on the back main grid of the non-chamfered battery bar in a steel mesh or screen printing mode; or conductive glue is sprayed on the back main grid of the non-chamfered battery bar in a dispensing mode.

To 6, the present invention adopts the non-chamfered battery bar 21 to manufacture the shingle battery string, not only effectively increases the light receiving area, but also is attractive and easy to be accepted by customers.

, The invention further provides a manufacturing method of the shingle assembly, wherein the laminated tile battery string is typeset, laminated and packaged to form a shingle assembly.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.