CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD
The present invention refers to method relates to chemical mechanical polishing device and, more specifically, chemical mechanical polishing process a wafer under polishing a wafer by controlling a supply of the slurry chemical polishing layer adjustable elaborately, can be mass-chemical mechanical polishing device and method relates to. Chemical mechanical polishing generally (Chemical Mechanical Polishing; CMP) semiconductor cup is used as a polishing process such as a wafer for rotatable relative to the input rotation body between polishing plate and wafer method of polishing a surface of a wafer by, known as the standard processing. Figure 1 shows a chemical mechanical polishing device also of the existing method is roughly shown the.. Also as shown in 1, a polishing pad upper surface (11) with polishing plate (10) and, the reference value in polishing (W) (W) the wafer with the sealant disposed under a is pressed against the polishing pad (11) rotating the while in contact with the surface of the polishing head (20) and a, polishing pad (11) predetermined surface of the energizing force by cutting the polishing pad to (11) formed on the surface of a conditioner and then to come out american plunger surface (30) and a, polishing pad (11) on the surface of slurry (40a) for supplying a slurry feeding part (40) consists of to. Polishing plate (10) is pressed against the polishing (W) the wafer polishing pad of a latex material (11) is attached to a rear side of, shaft (12) rotational movement is driven is rotated (11d) a. Polishing head (20) the polishing plate (10) polishing pad of (11) on the upper surface of the wafer (W) for holding a head portion (21) and a, head portion (21) rotationally driving the disc-shaped recording reciprocating by amplitude while the polishing arm (22) consists of in. The, polishing head (20) a wafer (W) has bottom of a polishing head (20) by polishing pad (11) rotated while process surface is pressed, wafer (W) for polishing layer occurs mechanical polishing process. Conditioner (30) has a polishing pad (11) chemical chemimechanical polishing which on the surface of a slurry with the materials are mixed which serves to numerous foam micropore are the spring promotes so that the polishing pad (11) by cutting the surface of the, polishing pad (11) filled pores in slurry was foamed polishing head (21) connected with the driving outputs a relay driving signal. transfer member to (W). To this end, conditioner (30) the pad polishing liquid during the conditioning process (11) the conditioning disc in contact (31) the holder (32), and one to grasp the, holder (32). rotationally driving the disc-shaped recording. And, holder (32) of rotation may be pivoted (30d) an arm (35) distal to the a conditioning disk (31) formed on the resultant (31p) for pressing the stabilized extensible necked the, downwardly a pneumatically (31p) a cylinder the housing is accommodated in an, place of the arms extending from the housing (35) in which they reciprocate pivoting movement performed, polishing pad (11) extended over the area to cutting micro for pores in foam. Said slurry feeding part (40) connected to connection ports electrically prolonged from both ends of the fuel cell and arm receive a supply of slurry slurry supply port (42) for the slurry (40a) a polishing pad (11) supplied to on. The, polishing pad (11) supplied to slurry (40a) has door 2 polishing pad as shown in (11) to spread out the liquid into overall in a polishing head (20) a wafer bottom of (W) from the first electrode to flow the, , the portable telephone sends a chemical polishing of wafer (W). However, slurry feeding part (40) from polishing pad (11) supplied to slurry (40a) the viscosity higher polishing pad (11) not purge smoothly on the surface of, polishing pad (11) according to the rotation of the slurry (40a) situ wafer at the recognition for the falling of a (W) polishing layer more than onto a part of the region of concentrated in a slurry, slurry polishing amount within chemical of the wafer by locally does not intended by a polishing layer formed inside one thickness distribution comprises the steps off sophisticated there has been a. I.e., also as shown in 3, variable according to the viscosities of slurry polishing pad but does (11) supplied to slurry (40a) has a polishing pad (11) since little suffer from from spreading on, polishing pad (11) supply location (X1, X2) polishing pad (11) according to the rotation of drawing code 66 that is represented as (W) along the circumferential direction the wafer, supplied to a to, slurry by chemical polishing amount the polishing pad (11) at the point recognition for the falling of a have had a problem that the consisting an excess of. The present invention refers to provided as a word line on at least one of the upper, wafer polishing slurry locally layer has a thickness of the, movable in X and Y in. Furthermore, the present invention refers to chemical of the wafer by slurry of controlling the to refine a polishing amount within, intended for. The, the present invention refers to a CMP process of the wafer by so polishing layer thickness distribution, intended controlling the. Said end of the, the present invention refers to, an output mode is pressed against the polishing pad wafer chemical mechanical polished at process device as chemical mechanical polishing is being performed, a polishing pad upper surface layer is overlaid and is self-propagating e polishing at pressure 1.5-20 lbs.; said polishing pad while releasable stop restricts the rotation of surface of the rotating polishing head and; radially from the rotational center of said polishing pad moving the for supplying slurry to a plurality of locations spaced apart by is, said wafer is located in is pressed against the polishing pad corresponding to an area where said radially of the polishing pad for supplying slurry to an position to slurry supply with a ring slurry feeding part; includes is composed of provides characterized by chemical mechanical polishing device. The, wafer polishing layer is pressed against the polishing pad for chemical polishing a slurry or hydrostatic or magnetic is not supplied, and only one point of the explosion-preventive, of the polishing pad plurality of radially by for supplying slurry to position to, uniformly provide entire polish wafer each area or object of flow the slurry not intended by a chemical polishing different door zone, the car is deviation to and to enable the.. The, slurry, increasing the viscosity of the adhesive evenly layer wafer polishing even original quantities desired slurry it is possible so that the, wafer chemical polishing pass filter may yield an effect. At this time, a slurry feeding part said said said from the outside of the machine body of the polishing pad toward a rotational center of the end of the polishing pad having radial direction component extending transversely across a arm, said arm cylinder, a displacer also reciprocatingly moves along the extending direction of the chaos signal includes, said slurry supply said protruding fasteners can be formed. As such, arm slider the longitudinal direction while moving slurry according to process for a silicon oxide layer caused polishing pad, of the polishing pad of the semiconductor wafer to accurately position to radially can be supplying a slurry to. Wherein, the extending direction of said slider along said arm various reciprocated by drive means which is displaceable in the intermediate part, light and fine controllable linear motor of it is preferable that the cylinder, a displacer also reciprocatingly moves. And, said but may be formed are curved arm, said configured as by which are radially arranged, of the polishing pad, the distance of movement of the slider outer radially extending from the center of polishing pad radius to since corresponding to the length, the detecting sensor supply of slurry can be monitors a power. While, the present invention according to said chemical mechanical polishing device thickness distribution layer for polishing of semiconductor wafer polishing layer sensing the further includes a sensor can be constructed. Wherein, wafer polishing layer thickness the sensing unit is the present applicant is the application registration 25th which registered patent patent number 10-1387917 incoming call or, eddy current sensor using a publicly known and an idle the wafer polishing layer a 25th which Public Patent Notification number 10-2008-102936 incoming call or, using optical sensor for sensing the wafer polishing layer thickness Public Patent Notification number 10-2006-0108763 25th which a publicly known call or the like comprising a disclosure. Among other things, said said abrasive layer sensor unit the thickness distribution layer for polishing of semiconductor wafer, said wafer a target thickness distribution current wafer said ensures an the thickness distribution which has a small variation in a position more than compared to position for supplying slurry adjusting the a silicon oxide layer caused by the polishing pad, slurry thickness distribution layer for polishing of semiconductor wafer by chemical polishing through a can be accurately controlled in may yield an a beneficial effect. I.e., thickness distribution target wafer said generally flat surface and may be, central portion convex or a center section even either a concave shape, each area or object to chemical mechanical polishing controlled amount of slurry to be fed uniformly and to adjust the CDMA timing to, wafer polishing layer chemical polishing amount within to refine a control of the, wafer polishing layer thickness distribution target (profile) of the semiconductor wafer to accurately and can reach. On the other hand, begins then has said a slurry feeding part said radial direction of said polishing pad discharging unit discharges the face of the polishing layer thickness sensing unit sensed by said current wafer said thickness distribution target wafer thickness distribution and the deviation amount of the slurry radial direction of said polishing pad may be loaded with adjusted for. As such, wafer polishing to a face of the chemical polishing a flow of to the, physical of the polishing pad abrasive layer and a wafer flowing through the mechanical polishing amount of polishing layer thickness distribution current which is measured on the sensor input numerical information in the from, mechanical polishing as well as a supply of slurry, taking into account the effects by adjusting the, accurate target their thickness distribution is after receiving the data. On the other hand, according to other fields of the invention, the present invention refers to, an output mode is pressed against the polishing pad wafer chemical mechanical polished at process is being performed as chemical mechanical polishing method, polishing pad and in contact with the surface of polishing a the final polishing step; said wafer polishing layer polishing layer measuring the thickness distribution and sensor; said abrasive layer sensor obtained in a current wafer said said thickness distribution of light emitted from at least the thickness distribution target wafer, said wafer current thickness distribution and said distribution of a target thickness of the wafer ensures an position which has a small variation in said position a more a slurry, a slurry polishing pad said adjusting step; includes is composed of provides characterized by chemical mechanical polishing method. Wherein, said a central portion thickness distribution target wafer or convex central portion concavely as by heating the resultant structure or it is entirely made out of coils respectively drive the actuator depending on. And, said abrasive layer sensor step by either applying eddy currents layer wafer polishing said optical step, a receive the reflection by current wafer said. thickness distribution. At this time, prior to said slurry conditioning step can be preformed, during said polishing step of supporting a user's body and said radius direction face of a slurry pre the supply step a; further are implanted into a semiconductor substrate in, wafer polishing to a face of the chemical polishing a flow of to the, physical of the polishing pad abrasive layer and a wafer flowing through the mechanical polishing amount of polishing layer thickness distribution current which is measured on the sensor input numerical information in the from, mechanical polishing as well as a supply of slurry, taking into account the effects by adjusting the, accurate target their thickness distribution which can be reached to may yield an a beneficial effect. The present specification and claim is' thickness distribution ' the term and similar a term of polishing a wafer is for checking and the CEo 2 layer referring to distribution to a defined. Therefore, wafer polishing of the layer thickness and complete distribution as measured by means of a distribution form filars include but is measurement of the 2 an inside flange formed at the end in the widest sense of including both a defined. The present specification and claim is' current thickness distribution 'a chemical mechanical polishing during processing, the' between embodiment 'wafer polishing layer thickness distribution which refers to, the present specification and claim is' target thickness distribution' a chemical mechanical polishing to the completion of the step of at a time point at which a final wafer polishing layer thickness distribution referring to a defined. According to the present invention, wafer polishing layer is pressed against the polishing pad for chemical polishing a slurry or hydrostatic or magnetic is not supplied, and only one point of the explosion-preventive, of the polishing pad plurality of radially by for supplying slurry to position to, uniformly provide entire polish wafer each area or object of flow the slurry chemical polishing requested from a library may yield an. Among other things, the present invention refers to polishing layer sensor section embodiment of polishing layer thickness distribution between the, said distribution a target thickness wafer said current wafer ensures an the thickness distribution which has a small variation in a position more position is pressed against the polishing pad a slurry, by adjusting the to supply, wafer polishing layer by chemical polishing slurry thickness distribution through a can be accurately controlled in may yield an a beneficial effect. I.e., the present invention refers to, any shape due to the fact said even distribution a target thickness of the wafer, each area or object to chemical mechanical polishing controlled amount of slurry to be fed uniformly and to adjust the CDMA timing to, wafer polishing layer chemical polishing amount within to refine a control of the, wafer polishing layer a target thickness distribution which can be reached accurately may yield an effect. Furthermore, the present invention refers to, of a wafer under chemical mechanical polishing process polishing layer thickness distribution based on a measure of control as well as a supply of slurry prior to, radius direction face of the, wafer polishing layer of the polishing pad flowing through the physical input numerical information in the first deviation mechanical polishing, mechanical polishing, taking into account the effects by adjusting the as well as a supply of slurry, a target thickness layer wafer polishing so than which can be reached distribution may yield an a beneficial effect. Figure 1 shows a also to a general chemical mechanical polishing device shown in the configuration of front, Figure 2 shows a plane view of Figure 1, Figure 3 shows a slurry of polishing pad over the route of travel of shown in the surface, Figure 4 shows a one embodiment also is shown that the aspect of the present invention, and a front surface, Figure 5 shows a plane view of Figure 4, Also the configuration of slurry feeding part 6a of Figure 5 shown in the elevational view, Also cross-section of the also 6a 6b also, Also 7a to 7c also thickness distribution target layer for polishing wafer has shown in the drawing, Also one embodiment of the present invention Figure 8 shows a chemical mechanical polishing method according to an order that is shown are sequentially, Current wafer also Figure 9 shows a deviation of thickness distribution and target thickness distribution for controlling supply amount of slurry according to coarse for account principle, Figure 10 shows a wafer slurry of polishing pads routes that are delivery to the. plane from the it is shown a. Hereinafter, reference to drawing with an chemical mechanical polishing device (100) according to one embodiment of the present invention disclosed above.. Just, describes in the present invention, publicly known functional or configuration drawing the same, or similar, to impart code for the subject matter of invention description is for speaks out a to omitted. Chemical mechanical polishing device (100) according to one embodiment of the present invention the, a polishing pad upper surface (111) layer is overlaid and is self-propagating e polishing plate (110) and, polishing pad (111) wafer (W) for polishing a process layer is formed in a contact state with a close contact surface while being applied with a pressure, the polishing head rotating the (120) and a, polishing pad (111) of modifying surface of for conditioner (130) and a, polishing pad (111) (O) the rotational center of moving the radially from (r) spaced apart by a plurality of locations for supplying slurry to an slurry feeding part (140) and a, (W) chemical mechanical controlled measuring thickness distribution layer for polishing polishing layer thickness sensing unit (150) and a, abrasive layer bulkiness [...] (150) in chemical mechanical polishing process (ta) thickness distribution current at least two slurry feeding part according to (140) feeding position slurry of a control unit controlling the supply amounts positions (160) including consists of. Said polishing plate (110) axis of rotation by a program, a switching unit (110a) is driven is rotated, shaft (110a) the surface of a surface plate a polishing pad (111) layer is overlaid the free surfaces. Said polishing head (120) having pressure chamber therein from the exterior, and is pressure chamber co-request number is transmitted to a, pressure chamber bottom of wafer position the wafer (W) (W) a polishing pad (111) on. pressing the blade against the pump shell. And, head polishing liquid during chemical mechanical polishing process (120) has a rotary driving while, concentricity a wafer (W) dictionary is polishing polishing layer the semiconductor wafer. Said conditioner (130) has a polishing pad (111) chemical chemimechanical polishing which on the surface of a slurry with the materials are mixed which serves to numerous foam micropore are the spring promotes so that the polishing pad (111) by cutting the surface of.. The, polishing pad (111) was filled pores in foamed polishing head slurry (21) connected with the driving outputs a relay driving signal. transfer member to (W). Said slurry feeding part (140) the slurry feeding part (145) from slurry (40a) receive a supply of polishing pad (111) supplied to on. To this end, also 6a and 6b as shown in, polishing pad (111) (O) in a direction toward the center of extending arm (141) and, arm (141) along the cylinder, a displacer also reciprocatingly moves a slider (142) comprises the rectangular plate like nut 3. At this time, slider (142) a variety of drive means the publicly known (142m) but can be done via the, arm (141) to permanent magnet pole S pole and N (not shown) and are alternately arranged on the, slider (142) a coil is formed the coil signal is detected by controlling the slider (142) is a linear motor moves along arm cylinder, a displacer also reciprocatingly moves of (142d) of being driven it is preferable that the. The, slider (142) while control so position of arm (141) along the slider (142) that moves the failure in the estimation of leaking frequency necessary contactless a structure of-changed signal is shifted down. Drawing and an arm (141) the polishing pad (111) (O) toward the center of-defined configuration arranged configured as the drug can be gear example example, according to other embodiment of the present invention arm (141) are curved with a smooth-may be formed. I.e., the present invention according to arm (141) the slider (142) is moved a path by which the guides the card, slider (142) to a supply port (142a) wafer (W) is a corresponding to a region from an, polishing pad (111) radial (r) multiple position (P1, .. P7) the slurry (40a) for supplying. sufficient be manufactured so that it can be. As such, wafer polishing layer polishing pad to chemical polishing (111) over a slurry (40a) a polishing pad (111) (O) center of moving the radially from a silicon oxide layer caused by the a plurality of locations spaced apart by, uniformly provide entire polish wafer each area or object of flow the slurry not intended by a chemical polishing to deviation is possible to prevent that a slurry, increasing the viscosity of the adhesive evenly layer wafer polishing even original quantities desired slurry it is possible, thus causing the, wafer chemical polishing pass filter may yield an effect. I.e., also with a 10, wafer (W) is pressed against the polishing pad (111) on the wafer while holding the wafer in the region of the ( deviant crease ) (i.e., P1 and P7 on the transfer path and along the circumferential direction of the) of slurry in [...] (A) region (40a) receives the. The, slurry supply port (40a) polishing pad from (111) of every point (P1, P2, ... , P7) supplied to slurry (40a) a wafer to. again by being. For example, wafer (W) x from (Ow) the rotational center of polishing amount within in chemical position spaced apart by sections are alternately arranged from a tracked when a shutter box is located at, spaced apart by (Ow) the rotational center of wafer (W) x from (P3, P5) of slurry in a position corresponding to the position of air centrifugally by forming in the end into a more effected by increasing the shelf. At this time, wafer (W) also chemical mechanical rate of polishing during a polishing process in a self-propagating e, wafer (W) the rotational center of the non-exposed region P3, P5 even x from (Ow) separated by a second power supply modules are chemical polishing amount within the porous foam controls a pressure slurry but contribute, polishing pad (111) of the liver impregnated to micropore foamed slurry still won passing through the P3, P5 is in the form of mobile path, increased P5 P3 and a cool air centrifugally by forming in the slurry (Ow) the rotational center of the wafer (W) by x from chemical greater than at positions remote from to give adverse effects on polishing amount within is. On the other hand, slider (142) to a supply port (142a) polishing pad from (111) on slurry (40a) position is supplied preferably it bounded by one or more 10. (Of for facilitating the in Figure 10 the 7 a first assembly by the example only) the, polishing pad (111) in a shape of a square frame 10 to one or more semiconductor wafers (W) at the point of slurry (40a) the source region of the first differentiating air centrifugally by forming in the end are formed, wafer (W) chemical polishing amount within more so control by a transfer screw material is obtained. And, slider (142), a drive means driving the moving (142m) operation information is (160) are sent to, control unit (160) the slider (142) of a tactilely perceptible information. And, polishing layer thickness sensing unit (150) (W) (ta) thickness distribution current in real time of a wafer from also control unit (160) are sent to, control unit (160) is slurry feeding part (145) from slider (142) which is connected by slurry supply line (145s) of control valve (145p) by regulating the, slurry supply port (142a) polishing pad from (111) on the respective position is the control amount of slurry to be fed uniformly. Drawing code 162 a control portion (160) slurry feeding part from (140) is line control signals controlling the cell array control. Said polishing layer thickness sensing unit (150) a wafer (W) an abrasive layer surface process (both layer includes non-metallic metal layer) the polishing pad (111) in a polishing layer contact with the chemically mechanically polished (W) a wafer having a. the inspecting time and inspecting cost layer thickness for polishing. To this end, also 4 as shown in polishing plate (110) formed area is (115) through the eddy current signal (Si) is applied (W) (So) response to polishing layer of a wafer defect by regularly may sensing thickness distribution, polishing pad (111) or penetration (115) actuator polishing layer from the reflected light, the reflection of which may be loaded with and an idle. For example, call patent number 10-1387917 registration 25th which, 25th which Public Patent Notification number 10-2008-102936 call, call Public Patent Notification number 10-2006-0108763 25th which disclosure or the like configuration to be capable of application to. Polishing layer thickness sensing unit (150) sensed at the thickness distribution data signal line (161) the control unit (160) is transmitted to. Said control unit (160) of abrasive particles layer thickness sensing unit (150) abrasive layer of wafer (W) receives data on operating thickness distribution, wafer (W) for polishing layer polished by finally target in a state with moving the plate an target thickness distribution (tt) and a receiving data the wafer current thickness distribution (ta). a tile. And, target thickness distribution (tt) and a current thickness distribution (ta) ensures an of a position more position which has a small variation in a slurry (40a) so is supplied. Wherein, a wafer relevant area of an 'position' of the polishing pad corresponding to radially from center (O) circulation promoted. points spaced (r). I.e., control unit (160) a chemical mechanical polishing device (100) a all components (110-150) by exchanging data, chemical mechanical polishing process is performed is monitoring both a state where. As such, current thickness distribution (ta) wafer (W) a target thickness distribution of light emitted from at least the and a (tt), wafer (W) polishing layer position in which there is a lack of polishing condition (than particularly is corresponding to positions polishing pad of circumferentially spaced position) by supplying slurry the representative basic strokes, more sophisticated chemical wafer polishing amount within end may yield an a beneficial effect. While, wafer (W) of abrasive layer (99) of a thickness distribution also shape polishing layer as shown in 7a (99a) constant thickness effective part and has a thickness smaller (t) to planarize the may be, also abrasive layer as shown in 7b (99b) the central part thickness (tc) (te) thickness of edge is higher compared to may be plane from the convex, as shown in also 7c abrasive layer (99c) the center portion of the top is thickness of edge (tc ') (te') compared to surface has a concave lower may be. (Drawing the center portion and thickness of edge variation of are the picture) Various wafer chip selection signal is enabled (W) target thickness distribution by a CMP process to reach a, by polishing head to wafer by pressing the wafer (W) each area or object of a mechanical abrasive alone should accurate shape is implemented even in case of thus, by controlling the main chemical polishing, chemical polishing amount within wafer polishing layer to refine a target layer wafer polishing by controlling the thickness distribution (profile) of the semiconductor wafer to accurately and can reach. Hereinafter, said groove, and at least one chemical mechanical polishing according to one embodiment of the present invention using the device in parallel with the axis a mechanical polishing process. Step 1 : first, polishing pad (111) wafer (W) process surface while maintaining the state in contact, slurry feeding part (140) by polishing pad (111) (O) center of a spaced distance radially from face of determined in accordance (r) (40a) by supplying a, wafer (W) generally to the uniform face of is supplied while the enclosed state is maintained for a prescribed period of time (S110) to chemical mechanical polishing process. Step 2 : then, polishing layer thickness sensing unit (150) by the wafer polishing layer (99a, 99b, 99c) (S120) measure the thickness distribution of. Step 1 can be performed in, a slurry chemical mechanical polishing process and from its wafer (W) the reaching an uniform, and to maintain a certain temperature chemical polishing since on-, polishing layer thickness sensing unit (150) is measured by a wafer polishing layer thickness distribution coupling mainly the wafer polishing layer thickness distribution draws some difference confirms whether a can be. While, polishing layer thickness sensing unit (150) which are measured by means of a current thickness distribution data a control unit (160) is transmitted to. 3 step: then, polishing layer thickness sensing unit (150) from received current thickness distribution data, also 9 illustrated as control unit (160) a wafer (W) (ta) a wafer polishing layer thickness distribution current layer polishing target thickness distribution of light emitted from at least the and a (tt), wafer current thickness distribution (tt) thickness distribution target and the wafer (ta) (Δ t=tt-ta) a portion having a large deviation of position deviation (Δ t) a small position more a slurry, polishing pad (111) to supply slurry feeding part (140) 30, and controls a (S130). The, slurry feeding part (140) a control portion (160) a polishing pad is calculated by (111) polishing pad supply slurry positions of (111) on to supply the, arm (141) along the slider (142) is moved (142d) while polishing pad (111) radial direction of a plurality of points (P1, ... P7) the control portion (160) each face of be defined in a while of differentiating is supplied to. To this end, slider (142) position of information control unit (160) transmitted to the, slider (142) slurry feeding part according to position of (145) supplied from valve for controlling the amount of a slurry (145p) opening and closing of and an open degree is (160) is controlled by. At this time, viscosity of slurry according to response formed by fastening valve (145p) is made is switching controller of. While, drawing the slurry feeding part (140) and slurry is supplied from a position (P1, ... , P7) to a point two areas arranged at the 7 but display, polishing pad (111) moving the radially from center of position spaced apart by 10 is preferably bounded by one or more, is located (P1, ... P7) slurry air centrifugally by forming in the end the control section (160) defined by is quantities. As such, polishing layer thickness sensing unit (150) (ta) thickness distribution current layer wafer polishing in the, wafer polishing layer thickness distribution target current and the wafer (tt) deviation of thickness distribution (ta) according to (Δ t) as well as a supply of the slurry by adjusting the, wafer polishing layer by chemical polishing slurry thickness distribution through a can be accurately controlled in may yield an a beneficial effect. The 3 stages and said 1 circuit rather than if the flat is set, step 2 and step 3 a chemical mechanical polishing process. does not continue beyond a point where is terminated. The present invention refers to said groove, and at least one polishing layer thickness sensing unit (150) thickness distribution current layer wafer polishing in the between embodiment, wafer (W) target thickness distribution (tt) and the wafer polishing layer thickness distribution current of light emitted from at least the protruding portions are repeatedly (ta), any difference gives position (Δ t) a portion having a large deviation (Δ t) a small position more a slurry, polishing pad (111) of by adjusting the corresponding location to supply, wafer polishing layer thickness distribution by chemical polishing slurry through which temperature can be controlled by providing a, the, wafer target thickness distribution is even any shape due to the fact (tt), wafer polishing layer to refine a polishing amount within chemical can be adjusted the, wafer polishing layer thickness distribution target (tt) which can be reached of the semiconductor wafer to accurately may yield an effect. Preferred processes or more to the present invention is exemplified embodiment but described, the present invention refers to induced by such a specific are not limited only in the embodiment in the present invention the technical idea, specifically claim connected in an ineffective is modified in various forms, change, is may be or improved. W: wafer ta: current thickness distribution Tt: target thickness distribution 99a, 99b, 99c: abrasive layer 100: chemical mechanical polishing device 110: polishing plate 111: polishing pad 120: polishing head 130: conditioner 140 : slurry feeding part 141: arm 142 : slider 142a: slurry supply port 150: polishing layer thickness sensing unit 160: control unit The utility model relates to a chemically mechanical polishing device carries out the chemically mechanical polishing process under the state that wafer and polishing pad contacted, a serial communication port, include: polishing plate, it adheres to the state that has the polishing pad with the higher authority and carries out the rotation, the rubbing head rotates when exerting pressure, exert pressure make the wafer the process face with the polishing pad contacts, thick liquid supply portion is to the follow the rotation center of polishing pad is separated by not a plurality of positions of same distance toward direction of radius and is supplied with the thick liquid, and possesses and have the thick liquid supply port, to locate regionally on the polishing pad corresponding to the wafer the thick liquid is supplied with to the direction of radius position of polishing pad to supply with the thick liquid to the position on a plurality of direction of radius of polishing pad, can realize from this to the polishing layer of wafer uniformly, press the weight supply thick liquid of hoping, thereby provide the chemically mechanical polishing device of the chemical polishing effect that can improve the wafer. An output mode is pressed against the polishing pad wafer chemical mechanical polished at process device as chemical mechanical polishing is being performed, a polishing pad upper surface layer is overlaid and is self-propagating e polishing at pressure 1.5-20 lbs.; said polishing pad while releasable stop restricts the rotation of surface of the rotating polishing head and; said chemical mechanical rate of polishing during a polishing process said wafer polishing layer thickness distribution sensing polishing layer thickness sensor with the; said polishing pad from the rotational center of each other in the radial direction spaced apart by moving the is for supplying slurry to a plurality of locations, said wafer is located in is pressed against the polishing pad corresponding to an area where said radially of the polishing pad for supplying slurry to an position to slurry supply with a ring and slurry feeding part; during said chemical mechanical polishing process is being performed, said slurry feeding part by radial direction of said polishing pad discharging unit discharges the face of in the state that said polishing layer thickness the slots support the current wafer thickness distribution of the test and, said polishing layer thickness sensing unit sensed by said current wafer said distribution a target thickness of the wafer the thickness distribution ensures an a position more position which has a small variation in a slurry polishing pad formed on the phase adjusted so that is supplied for supplying slurry to the control portion; characterized by includes is composed of chemical mechanical polishing device. According to Claim 1, said said a slurry feeding part from the outside of the machine body of the polishing pad of the polishing pad said radial direction component toward a rotational center of the end having a arm extending transversely across, said arm cylinder, a displacer also reciprocatingly moves along the extending direction of the chaos signal includes, said slurry supply fasteners characterized by said slider formed on a chemical mechanical polishing device. According to Claim 2, the extending direction of said arm said slider along the linear motor principle is performs the compensation by comparing the, slurry supply said wafer is located in said fasteners is pressed against the polishing pad corresponding to an area where a radius length for supplying slurry to reciprocating movement by distances characterized by chemical mechanical polishing device. According to Claim 2, said configured as said arm arranged radially with of the polishing pad to characterized by chemical mechanical polishing device. According to Claim 2, said slurry supply said fasteners a defined region of the polishing pad 10 amount of slurry at the location of one or more supply controlled at the characterized by chemical mechanical polishing device. According to one of Claim 1 to Claim 5, the projection system said wafer target thickness distribution or a concave shape and sound absorbing member is partly characterized by chemical mechanical polishing device. Deleted An output mode is pressed against the polishing pad wafer chemical mechanical polished at process is being performed as chemical mechanical polishing method, polishing pad and in contact with the surface of polishing a the final polishing step; during said polishing step of supporting a user's body and, said radius direction of the polishing pad face of a slurry pre high level; during the supply step of supporting a user's body and said slurry pre, said wafer polishing layer polishing layer measuring the thickness distribution and sensor; said abrasive layer sensor obtained in a current wafer said said thickness distribution of light emitted from at least the thickness distribution target wafer, said wafer current thickness distribution and said a ensures an distribution of a target thickness of the wafer position the control the intensity valve opening of the supply part slurry which has a small variation in said one side of the swirler due to position many rate at which the slurry is supplied slurry adjusting step; characterized by includes is composed of chemical mechanical polishing method. According to Claim 8, said wafer target thickness distribution or a concave shape and the projection system sound absorbing member is partly characterized by chemical mechanical polishing method. According to Claim 8, said abrasive layer sensor step by either applying eddy currents layer wafer polishing said optical step, a receive the reflection by current wafer said measuring a thickness distribution characterized by chemical mechanical polishing method. Deleted Deleted Deleted
