코티솔 결합 나노입자를 포함하는 저항변화 복합재료 및 이를 사용한 기억소자

The present invention according to in the embodiment detailed with reference to the attached drawing as follows.

Figure 1 shows a mimetic indicating memory device structure according to an embodiment of the present invention also are disclosed.

The storage element in the embodiment substrate (100) a lower electrode (200) and the active layer (300) and an upper electrode (400) sequentially stacked structure and, encoded number tank are sequentially formed on them.

The, active layer (300) is a transition metal oxide nanoparticles as nano-trap which stores electrical charge combining insulating material dispersed in a matrix neurotransmitter nose mote brush consists of changing the composite material.

In the embodiment

Following the first method, the high pressure liquid coolant feed material was an active layer number.

Selecting ZnO nanoparticles which stores electrical charge nano as traps, ZnO nanoparticles is a nose mote brush that is chemically bonded to him.

Compatibilized 14 nm particles with a size ZnO nanoparticles provided the deflection, the nose mote brush adrenal cortex hormone secreted in response to various stresses ( ) And, in the embodiment was used in a commercially available nose mote brush.

ZnO nanoparticles chemically nose mote brush for coupling, such as a hydroxyl group (- OH) on the surface of the ZnO nanoparticles also 2 first order to generate H ZnO nanoparticles₂ O₂ Surface-treated substrate. Such as a gel layer 3, carboxyl (- COOH) on the surface of the ZnO nanoparticles using succinic anhydride (succinic anhydride) in reacting to produce other. The, using route can be carboxyl to produce aldehyde (glutaldehyde) glycol.

Finally also 4 such as, EDC/NHS ZnO nanoparticles by treatment with an adhesive tape having a terminal EDC (1 a-ethyl-a 3 - (3 dimethylaminopropyl) carbodiimide) allocated to store and nose mote brush attached by replacing the same, nose mote brush chemically coupled ZnO nanoparticles and copiers.

The procedure combined with ZnO nanoparticles with nose mote brush prepared by the number THF solvent (tetrahydrofuran) was dissolved PVP. The nose mote brush for connecting coupling number combined with ZnO nanoparticles and PVP (1, 6 a-Bis(trichlorosilyl) hexane) powder has a transparent conductive layer, the PVP solution 2. 0% by weight ZnO nanoparticles combined with nose mote brush and 0. 20% by weight are disclosed.

And the following order number was also 1 change in the resistance of-type storage element structure such as high pressure liquid coolant.

First 0. 7 mm thickness glass substrate (100) along an upper surface (200) as a 200 nm thickness ITO coating, coated ITO nose mote brush surface combined with ZnO nanoparticles and PVP dissolved after spin-coating solvent is evaporated with 300 nm thickness of active layer (300) came into.

Finally active layer (300) vapor deposition process on the surface of the upper electrode layer thickness that is at least ten evaporation Al 150-a 200 nm (400) was used.

Said storage element prepared by the number to an electric properties were measured progress. The, comparison example nose mote brush ZnO nanoparticles not combine the same procedure number storage element prepared by the number was high pressure liquid coolant.

In the embodiment of Figure 5 shows a measured I a-V curve and therefore the metal, the metal compared to the measured I a-V curve 6 embodiments are disclosed.

As shown, 2 is the resistance of memory elements are all applied voltage gradually changes the resistance change that-type storage element exhibits the properties of analog type can be confirmed.

The embodiments of resistance-varying type diffusion (hysterisis) is overlapped with the hysteresis comparing male general reduced due to which noise is very large while at the same time exhibiting all the voltages can be confirmed. The ejected in the embodiment produces proportional increase of the voltage change in the resistance of-type storage element exhibiting a hysteresis than keeping hysteresis comparing specific embodiments of decreasing while noise has almost no, as in the embodiment of the non-volatile memory elements being a [su carrying on shoulder and side surfaces of such tendency may be by a goniophotometer.

This hysteresis characteristic is exposed functional groups known in response to stimulate human hormone-stress with work nose mote brush similar disclosed.

The storage element in the embodiment multi-EEPROM device with [su carrying on shoulder is applied, using only two electrodes 2 2 terminal (2 a-terminal) in a very simple arrangement of [su carrying on shoulder element is under or over.

In the embodiment according to the MLS [su[su] carrying on shoulder while having the simulation element comprising a non-volatile memory element of (neuromorphic device) can be applied as a [su carrying on shoulder, while having the simulation for the remaining component in the embodiment of non-volatile storage element in respect of the use of other techniques can be applied without a specific number external grudge number description dispensed to each other.

Herein as shown with prior, the hormone acting as a storage element in the embodiment indicated hysteresis characteristic pertains with work and similar, while having the characteristic by presenting these properties even when simulating while having the simulation element or a built for hereinafter can be achieved.

A more preferred embodiment the present invention through described but, in the embodiment of the present invention is to avoid a technical idea illustratively described above which, within a range that the technical idea of the present invention various changes from a heavy person with skill in the art sacrificial vertical if understand it will rain. In the embodiment of the present invention scope of protection the claim has a plane orientation must be interpreted by a rather than in a natural, technical idea of the present invention also in a range equal to the range of all rights will be interpreted.