SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The present invention refers to relates to semiconductor, Schottky electrode is provided having a GaN semiconductor device are disclosed. (Schottky Barrier Diode, SBD) is generally Schottky barrier diode turn-on voltage (Voltage turn-of-zeros, VT) and forward currents (Forward Current, IF) forward of breakdown voltage characteristics (Breakdown Voltage, VBD) (Reverse Leakage Current, IR) and reverse leakage current is important parameters such as reverse characteristics are disclosed. Prior art Schottky electrode ohmic electrode and the distance between the forward characteristic include reduced, combined with ohmic electrode Schottky electrode and anode structure, Bonding Pad Over Active (BPOA) structure, a silicon doped anode region and a cathode region, etc. using nitride passivation method. In the conventional reverse characteristics are improved and increased the distance between the conductive Schottky electrode ohmic electrode, Field Plate structure, anode region recess, oxide-based passivation method using etc.. The present invention techniques specific number if improved semiconductor device is connected characteristics and forward under public affairs number 30 to 60 seconds. To achieve the present invention according to number 1 nitride semiconductor layer on a substrate for semiconductor device and said number; said number 1 number 2 nitride semiconductor layer on the nitride semiconductor layer; number 1 and number 2 [...][...] nitride semiconductor layer on said number 2; in which said number 2 nitride semiconductor layer between said number 1 [...][...] said number 2 number ball recess region; said number 1 [...] lower face side and said recess region sidewall passivation layer; and said number 1 and number on [...] co, said recess region includes a Schottky electrode can extend to the inside.
According to one example, comprising said number 1 nitride semiconductor layers may be GaN, AlGaN nitride semiconductor layers may be said number 2, InAlN, and InAlGaN can be selected from any one.
According to one example, at least one of the Ti [...][...] said number 1 and said number 2, Al, Ni, and Au can be comprising.
According to one example, one aspect of the recess region is aligned with said one side [...] said number 1 can be disclosed.
According to one example, said Al passivation2 O3 Can be a.
According to one example, said Schottky electrode is further formed on the recess region can be [...] said number 2 in said direction.
According to one example, a Schottky electrode is Au and Ni can be said.
According to one example, said number 2 nitride semiconductor layers can be interposed between said [...]it digs up, dizzily the layer.
According to one example, said number 2 nitride semiconductor layer including a GaN can be interposed between said [...]it digs up, dizzily the layer.
The present invention according to the number of semiconductor bath method and achieve said number for
The number under public affairs number 1 nitride semiconductor layer on a substrate; said number 1 number 2 under public affairs number nitride semiconductor layer a nitride semiconductor layer; forming a nitride semiconductor layer number 1 and number 2 [...][...] said number 2; forming at least one recess region in said number 2 nitride semiconductor layer between said number 1 [...][...] said number 2; said number 1 side and said recess region including forming a passivation layer to cover the sides the lower face and the [...]; and said number 1 and number on [...] co, filling said at least one recess region can be a Schottky electrode.
According to one example, at least one of said number 1 [...][...] Ti nitride semiconductor layer forming said number 2 and the number 2, Al, Ni, Au and including forming a [...]; and said steps can be [...] comprising.
According to one example, the atomic layer deposition method including forming a passivation layer comprising said can.
According to one example, said number 2 nitride semiconductor layer over the capping layer between said [...] can. According to of the present invention in the embodiment, number on ball and [...], recess extending Schottky electrode 1308. ball number. The, semiconductor device number ball 1308. forward with improved properties.
According to of the present invention in the embodiment, the Schottky electrode number ball and recess formed between the resultant structure can be disclosed. The, number ball 1308. reverse characteristics is improved is a semiconductor device.
But, the present invention according to the effect of the semiconductor device is not limited effects said disclosure. Figure 1 shows a cross-section of the semiconductor device in the embodiment according to one of the present invention also exhibits. Figure 2 shows a cross-section of the semiconductor device of the present invention also in the embodiment according to other exhibits. Figure 10 shows a cross-section of the present invention indicating number of semiconductor bath method also 3 to one in the embodiment according to also are disclosed. Or more the purpose of the invention are, are other purposes, features and advantages of the attached drawing will easily understand associated with over the preferred embodiment hereinafter. However, the present invention refers to in the embodiment described herein is not limited to the form and the other disapproval. Rather, the disclosure is introduced in the embodiment wherein the intimate intermixing of the contents of the present invention can be complete and for allowing relative to conventional ball number which can be transmitted in order to sufficiently to event are disclosed. In the specification, any layer (or layers) on substrates or other film (or layer) determines when it other films referred to as (or layers) or can be formed directly on a substrate film (or layer) number 3 interposed therebetween or disapproval in addition, substrate in drawing, thickness and the like for the clarity exaggerated size configurations are disclosed. In addition, the specification in various in the embodiment number 1, number 2, number 3 terms in various directions such as, films (or layers) used to describing a but, these directions and films (or layers) is defined by such terms don't substrate. These terms for any particular direction or membrane (or layers) only other direction or membrane (or layers) have been used in order to distinguish only disclosed. Thus, in the embodiment number 1 film (or layer) either in the embodiment referred to in number 2 film (or layer) other membrane referred disapproval. In the embodiment described herein and illustrated in the embodiment comprises a unit each with its complementary. The same reference number throughout the specification components parts may be represented by a goniophotometer. Hereinafter, reference drawing, of the present invention in the embodiment detailed to explain for less than 1000. When the semiconductor device is a Schottky diode according to an embodiment of the present invention is described but, limited to are not correct. Figure 1 shows a cross-section of the semiconductor device in the embodiment according to one of the present invention also exhibits. The reference also 1, substrate, nitride semiconductor layer number 1, number 2 nitride semiconductor layers, [...] number 1, number 2 [...], the Schottky electrode, and resultant structure co number can be disclosed. Substrate (100) having highly-added may be the substrate disclosed. For example, substrate (100) an oxide aluminum (Al2 O3 ), Silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN) or silicon carbide (SiC) can be comprising. Substrate (100) on number 1 nitride semiconductor layer (112) and number 2 nitride semiconductor layer (114) is 1308. ball number. Number 1 nitride semiconductor layer (112) and number 2 nitride semiconductor layer (114) is be a silicon epitaxial layer. Number 1 nitride semiconductor layer (112) and number 2 nitride semiconductor layer (114) on the interface of the two-dimensional electron gas layers (2 a-dEG: 2 a-dimensional electron gas) including material forming can be. In one example, number 1 nitride semiconductor layer (112) comprising the GaN can be. Number 2 nitride semiconductor layer (114) is AlGaN, InAlN, and InAlGaN can be selected from any one. Number 1 nitride semiconductor layer (112) and number 2 nitride semiconductor layer (114) is epitaxial [...] be. Number 1 nitride semiconductor layers (112) back this n-type epitaxial [...], may have high breakdown voltage. Number 1 nitride semiconductor layer (112) buffer seed layer disclosed. Buffer layer (100) and number 1 nitride semiconductor layer (112) (lattice mismatch) between lattice points according to door number in order to solve 1308. ball number. In another example, substrate (100) and number 1 nitride semiconductor layer (112) can be included between the buffer layer. Buffer layer comprising GaN can be. Number 2 nitride semiconductor layer (114) number 2 on [...] (124) and number 1 [...] (122) can be formed. In one example, number 1 [...] (122) is the anode electrode (160) be of [...]. [...] number 2 (124) can be the cathode electrode. In terms flat, [...] number 2 (124) and number 1 [...] (122) horizontally each other can be spaced disclosed. [...] number 2 (124) and number 1 [...] (122) titanium (Ti) at least one of the, aluminum (Al), nickel (Ni), and gold (Au) can be comprising. [...] number 2 (124) and number 1 [...] (122) is number 2 nitride semiconductor layer (114) can be electrically connected. Recess region (130) is number 1 [...] (122) and number 2 [...] (124) between the number 2 nitride semiconductor layer (114) in 1308. ball number. Recessed areas (130) the lower surface of the number 2 nitride semiconductor layer (114) can be close to the lower surface. In terms flat, recessed areas (130) is [...] number 2 (124) number 1 than [...] (122) thereof can close. For example, recess region (130) one side wall of the number 1 [...] (122) is aligned with one side of the can be disclosed. Recess region (130) and in number 1 [...] (122) on the Schottky electrode (150) is 1308. ball number. Number 1 [...] (122) Schottky electrode (150) faces the anode electrode (160) is 1308. ball number. A Schottky electrode (150) is [...] number 2 (124) and horizontally can be spaced disclosed. A Schottky electrode (150) includes a plurality of conductive substances can. For example, a Schottky electrode (150) nickel (Ni) and gold (Au) can be comprising. A Schottky electrode (150) is number 1 [...] (122) can be electrically connected. Forward bias is applied, at least one recess region (130) in a Schottky electrode (150) as well as, number 1 [...] (122) can be further flowing current through. The, forward current characteristic improved 1308. ball number is a semiconductor device. A Schottky electrode (150) is number 2 nitride semiconductor layer (114) in contact with a two-dimensional electron gas layers (2 a-dEG) can be forming the capacitor dielectric layer. Reverse bias is applied, insures that can be enhanced disclosed. The, leakage current can be the semiconductor device with improved characteristics. A Schottky electrode (150) and number 2 nitride semiconductor layer (114) between the passivation layer (140) can be interposed. Passivation layer (140) is number 1 [...] (122) and number 2 [...] (124) of side surfaces thereof can cover. Passivation layer (140) the first and second (130) onto a first side of the lower face and 1308. ball number. For example, passivation layer (140) oxide aluminum (Al2 O3 ) Can be a. Aluminum oxide (Al2 O3 ) Is higher than the breakdown field (Breakdown Voltage) other passivation material may have a low capacitance. The, aluminum oxide (Al2 O3 ) (Reverse Leakage Current) can be reducing the resultant method for reverse leakage current. As a result, the semiconductor device can be reverse characteristic is improved. Figure 2 shows a cross-section of the semiconductor device of the present invention also in the embodiment according to other exhibits. The reference 2 also, substrate, nitride semiconductor layer number 1, number 2 nitride semiconductor layers, grow a layer, [...] number 1, number 2 [...], the Schottky electrode, and resultant structure co number can be disclosed. In order to avoid redundant descriptions, prior Schottky diode and the same element in the embodiment 1 described also with reference to the detailed description is omitted as follows. Grow a layer (116) is [...] number 2 (124) and number 2 nitride semiconductor layer (144) and number 1 [...] (122) and number 2 nitride semiconductor layer (114) can be interposed between. Grow a layer (116) is grow a layer (116) through recess region (130) can be comprising. Grow a layer (116) for protecting the surface of semiconductor, can be reducing leakage current. In one example, grow a layer (116) comprising the GaN can be. A Schottky electrode (150) is grow a layer (116) through number 2 nitride semiconductor layer (114) can be extend to the inside. Above, a Schottky electrode (150) and recess region (130) Al between2 O3 Passivation layer (140) Schottky diodes interposed is disclosed. Al2 O3 Passivation layer (140) Schottky diode can be alumina. The, number ball 1308. Schottky diode reverse characteristic is improved. In hereinafter, one of the present invention is described in the embodiment according to number of semiconductor bath method. Figure 10 shows a cross-section of the present invention indicating number of semiconductor bath method also 3 to one in the embodiment according to also are disclosed. With reference also to the 10 also 3, substrate, nitride semiconductor layer number 1, number 2 nitride semiconductor layers, grow a layer, a passivation layer, [...] number 1, number 2 [...], and Schottky electrode 1308. ball number. The reference also 3, substrate (100) is 1308. ball number. Substrate (100) an oxide aluminum (Al2 O3 ), Silicon carbide (SiC), or silicon (Si) can be comprising. For example, silicon (Si) substrate having a thickness of 625 nanometers (100) the number ball 1308. Substrate (100) on number 1 nitride semiconductor layer (112) and number 2 nitride semiconductor layer (114) is 1308. ball number. In one example, number 1 nitride semiconductor layer (112) and number 2 nitride semiconductor layer (114) the larger lattice constant of growth (epitaxial growth) can be formed by processes. For example, epitaxial growth process is organic metal chemical vapor deposition (metal organic chemical vapor deposition), liquid [...] (liquid phase epitaxy), liquid hydrogen (hydride vapor phase epitaxy) growth, MOVPE (metal organic vapor phase epitaxy) [...] molecules (Molecular beam epitaxy) or at least one can. In one example, number 1 nitride semiconductor layer (112) having a thickness of about 3 to 4 micrometers containing a GaN can be. Number 2 nitride semiconductor layer (114) containing a AlGaN having a thickness of about 20 nanometers can be. Number 2 nitride semiconductor layer (114) on grow a layer (116) is 1308. ball number. Grow a layer (116) can be formed by the larger lattice constant of growth process. For example, epitaxial growth process is organic metal chemical vapor deposition, liquid [...], hydrogen liquid growth, or MOVPE [...] molecules comprising at least one can. For example, grow a layer (116) is 1. 25 having a thickness of GaN can be containing a nanometer. Additionally, the reference also 4, method for boundary component separate areas (118) can be formed. Separate areas (118) is grow a layer (116) from number 1 nitride semiconductor layer upper surface (112) to the interior of can be formed. Separate areas (118) the lower surface of the nitride semiconductor layer number 1 (112) can be close to the lower surface. Separate areas (118) is etched to form a mask (not shown) using dry etching or wet etching can be disclosed. For example, separate areas (118) forming process is BCl3 /Cl2 High frequency gas comprising an inductive plasma reactive ion etching (Inductively Coupled Plasma Reactive Ion Etching, ICP RIE) can be. In one example, separate areas (118) may have depth about 2000 angstroms. 5 and 6 may also reference surface, grow a layer (116) number 1 on [...] (122) and number 2 [...] (124) can be formed. In one example, number 1 [...] (122) is the anode electrode (160) be a an ohmic metal. [...] number 2 (124) can be the cathode electrodes. Number 1 [...] (122) and number 2 [...] (124) a process of forming an electron beam ([...]-a 310) can be deposition. Electrodes (122, 124) are sequentially formed can be a single or a plurality of metal. For example, electrodes (122, 124) about 20 nanometer titanium (Ti), aluminum (Al) about 100 nanometers, nickel (Ni) about 25 nanometers, and from about 50 nanometer gold (Au) can be comprising. Number 1 [...] (122) and number 2 [...] (124) horizontally spaced apart from each other can be formed. For example, in terms of a flat, a Schottky electrode (150) and number 2 [...] (124) about 15 micrometers to about 20 microns of separation distance can be. Number 1 [...] (122) and number 2 [...] (124) (H) heat treatment (annealing) can be. For example, electrodes (122, 124) 880 is nitrogen (N2 ) Atmosphere (H) 1 minutes can be. Electrodes (122, 124) (H) heat treatment through grow a layer (116) or number 2 nitride semiconductor layer (114) can be an ohmic contact. The reference also 7, [...] number 2 (124) and number 1 [...] (122) between the number 2 nitride semiconductor layer (114) in at least one recess region (130) can be formed. Grow a layer (116) the first and second (130) can be penetrated by a. Recessed areas (130) forming process grow a layer (116) and number 2 nitride semiconductor layer (114) comprising a first etch mask etching or wet etching can be. For example, recess region (130) forming process is BCl3 /Cl2 High frequency inductive plasma reactive ion etching (ICP RIE, Inductively Coupled Plasma Reactive Ion Etching) comprising gas can be. In one example, at least one recess region (130) may have a width of about 3 micrometers. Recessed areas (130) may have about 18 nanometer depth. The reference also 8, number 1 [...] (122), [...] number 2 (124), grow a layer (116), and number 2 nitride semiconductor layer (114) covering the passivation layer (140) can be formed. Passivation layer (140) the first and second (130) can be formed on the side the lower face and. Passivation layer (140) a process of forming an atomic layer deposition method (ALD, Atomic Layer Deposition), molecular beam deposition (MBE, Molecular Beam Epitaxy), and the polysilicon film (Thermal Oxidation) can be selected from any one. For example, about 7 nanometers to about 15 nanometers thickness aluminum oxide (Al2 03 ) Including a passivation layer (140) can be formed through the atomic layer deposition method (Atomic Layer Deposition, ALD). Atomic layer deposition (ALD) passivation layer (140) can increase uniformity of deposition. Leakage current than non-uniform passivation layer uniform passivation can be small disclosed. The, reverse with improved properties can be the semiconductor device. The reference also 9, number 1 [...] (122) and number 2 [...] (124) on passivation layer (140) are special number can be disclosed. Said passivation layer (140) number of special etching process (etching) or polishing step (polishing) can be. For example, passivation layer (140) are buffer oxide etching (BOE, Buffered Oxide Etch) can be. The, number 1 [...] (122) of the top and number 2 [...] (124) are the upper surface of can be exposed. The reference also 10, number 1 [...] (122) on the Schottky electrode (150) can be formed. A Schottky electrode (150) the first and second (130) can be fill. A Schottky electrode (150) the first and second (130) from [...] end of number 2 (124) can be further formed on the direction of. For example, a Schottky electrode (150) the first and second (130) [...] from number 2 (124) can be further formed on the direction of about 1 micrometers. In one example, a Schottky electrode (150) a process of forming an electron beam ([...]-a 310) can be deposition. A Schottky electrode (150) includes a plurality of metal can. For example, nickel (Ni) having a thickness of 30 nanometers and 400 nanometers gold (Au) having a thickness of lower than the Schottky electrode (150) can be formed. The present invention is up to about number preferred embodiment examples for flaws. The present invention is in the field of the present invention is provided essentially from deviating from a person with skill in the art of the present invention is embodied in the form of modified-inputted properties may be understand it will rain. The definitive aspect as well as the descriptive disclosure examples embodiment contemplated in the aspect should. The aforementioned range of the present invention description and claim rather than as shown, and the present invention is in a range equal to all differences may be carried on an will be interpreted. A first nitride semiconductor layer of a semiconductor device is provided on a substrate. A second nitride semiconductor layer is provided on the first nitride semiconductor layer. A first ohmic metal part and a second ohmic metal part are provided on the second nitride semiconductor layer. A recess region is provided in the second nitride semiconductor layer between the first ohmic metal part and the second ohmic metal part. A passivation layer covers the lateral side of the first ohmic metal part and the lateral side and the lower side of the recess region. A Schottky electrode is provided on the first ohmic metal part and is extended to the recess region. Accordingly, the present invention can provide a semiconductor device with an improved forward property and an improved backward property. COPYRIGHT KIPO 2017 Number 1 nitride semiconductor layer on a substrate; said number 1 number 2 nitride semiconductor layer on the nitride semiconductor layer; number 1 and number 2 [...][...] nitride semiconductor layer on said number 2; in which said number 2 nitride semiconductor layer between said number 1 [...][...] said number 2 number ball recess region; said number 1 [...] lower face side and said recess region sidewall passivation layer; and said number 1 and number on [...] co, said semiconductor device including a Schottky electrode extend to the inside recess region. According to Claim 1, comprising said number 1 nitride semiconductor layers may be GaN, AlGaN nitride semiconductor layers may be said number 2, InAlN, and InAlGaN semiconductor device including at least one selected from one. According to Claim 1, said number 1 [...][...] said number 2 and at least one of the Ti, Al, Ni, Au and including a semiconductor device. According to Claim 1, one aspect of the recess region is aligned with one side [...] said number 1 said first metal. According to Claim 1, said passivation Al2 O3 Including a semiconductor device. According to Claim 1, said Schottky electrode is further formed on the recess region [...] direction said number 2 in said semiconductor device. According to Claim 1, said semiconductor device including a Schottky electrode is Ni and Au. According to Claim 1, said number 2 nitride semiconductor layer interposed between said [...]it digs up, dizzily the layer semiconductor device. According to Claim 1, said number 2 nitride semiconductor layer including a GaN semiconductor device interposed between said [...]it digs up, dizzily the layer. The number under public affairs number 1 nitride semiconductor layer on a substrate; said number 1 number 2 under public affairs number nitride semiconductor layer a nitride semiconductor layer; forming a nitride semiconductor layer number 1 and number 2 [...][...] said number 2; forming at least one recess region in said number 2 nitride semiconductor layer between said number 1 [...][...] said number 2; said number 1 side and said recess region including forming a passivation layer to cover the sides the lower face and the [...]; and said number 1 and number on [...] co, filling said at least one recess region to form a Schottky electrode including number of semiconductor bath method. According to Claim 10, forming the at least one of said number 1 and said number 2 [...][...]: Ti nitride semiconductor layer said number 2, Al, Ni, Au and including forming a [...]; and said method including steps of semiconductor [...] number tank. According to Claim 10, formed on the portion of the atomic layer deposition method including said number of semiconductor bath method. According to Claim 10, further including a capping layer between said [...] said number 2 nitride semiconductor layer number of semiconductor bath method.
