SEMICONDUCTOR INK COMPOSITION INCLUDING CARBON NANOTUBE AND THIN-FILM TRANSISTOR MANUFACTURING METHOD USING SAME
The printing process of the present invention refers to printed electronic device fabrication ink composition and method carried out using the thin film transistor are disclosed. Using amorphous silicon with a semiconductor active layers strength, life, but performance and stability in one aspect with the lower, an expensive vacuum equipment is used to number in anti-pumping device of vacuum deposition bath and steam, but door number number printing area has been. In order to solve such a door number, screen, flexographic, gravure, inkjet or roll-to-roll print number tank through flexible elements when it becomes, like alternatively number, the properties suitable for a printing process having a ink material has been washed. (Sexithiophene) 1990's sexy gap five pens is such as by using a conductor layer 10 is about the same composite oligomer further encompasses amorphous silicon-1 Cm2 (Carrier mobility)/Vs carrier mobility of thin film transistor is smaller number take place. After this, low cost process for replacement material to a solution capable of forming a membrane through Poly [5, 5 '- bis (3 a-dodecyl-a 2 a-thienyl) - 2, 2' - bithiophene] (PQT provided 12), Poly (3 a-hexylthiophene) (P3HT), α, ω-a dihexylquaterthiophene (DH4T) such as organic semiconductor materials has been studied. However said materials is still has low carrier mobility, stand-by mode and readily oxidized due to temperature performance, shorten the service life of the doors has been number. On the other hand carbon nanotube is mechanical, electrical properties and electronic raw material, composite material, conductive resin material, printed electronic device material in a wide range of applications in various fields material employed in the material are disclosed. Carbon nanotube having a structure which includes a tube having a diameter of nano unit, single-walled, double-walled and multiwalled carbon nanotube or the like can be classification. Has a high thermal conductivity is configured as a carbon carbon nanotube properties, mechanical strength of the steel 100 times showing a strong and, while the better material that it conceives above existing large elasticity of 10 than the intensity of the bulletproof vests. In addition a strong covalent who are graphite and very stable and chemically by a similar structure, has a good electrical conductivity. In addition passes an area that can be present as a powder when mixing different types of powder, powder physical/chemical properties can be modified. E.g. when mixing carbon nanotube polymer, electrically conductive, mechanical strength characteristics can be a major improvement. This single wall carbon nanotube transistor for applying the various studies of satisfactorily. Single-walled carbon nanotube emitter and small size is a few nanometers, have anisotropic structure without a high temperature electrons or holes can flow well since suitable transistor properties. This is 10 or more times higher than existing silicon-based transistor AB initio exhibit well house power meeting the heat caused in operation of the power consumption and reduced to equal to or less than. However single-walled carbon nanotube includes a chiral material form, diameter, according to the length of a metal or semiconductor-which has, according to the energy gap diameter shift properties disclosed. This difference metallic single-walled carbon nanotube by single-walled carbon nanotube can be partitioned into the semiconductor-weight ratio of about 1:3 implementation being. Specifically, said single-walled carbon nanotube is single-walled carbon nanotube 60 - 90% metallic single-walled carbon nanotube 10 - 40% and a method and apparatus can be. This single wall carbon nanotube using single-walled carbon nanotube transistor signal from accomplishing the method and apparatus. The semiconducting single-walled carbon nanotube but only using single-walled carbon nanotube used high pressure liquid coolant or order number only method and apparatus, the semiconducting single-walled carbon nanotube from general single-walled carbon nanotube further required door number recorded with the separating process flow tides. The semiconducting single-walled carbon nanotube differs as well as damage to the door number is generated. Specifically, single-walled carbon nanotube in metallic single-walled carbon nanotube (number of special) flow into the [...] separation using analytical semiconducting single-walled carbon nanotube column to pass or very high speed lever having a known separating method and the like, the semiconductor-single-walled carbon nanotube metallic single-walled carbon nanotube metallic single-walled carbon nanotube using fine band gap difference selects only through chemical reactive method are treated with metallic properties are known. The semiconducting single-walled carbon nanotube semiconductor properties drastically lowering key method however the disadvantage described. In addition single-walled carbon nanotube is a single wall carbon nanotube bundle shape is a semiconductor abrasive comprising agglomerated disease due to door number not dissipative flow tides. A single walled carbon nanotube bundle shape conventional aggregation method or single-walled carbon nanotube can be dispersed in a flow number end of cover and sidewall functionalized adding surfactants including method but a known, single-walled carbon nanotube very low concentration of these method, single-walled carbon nanotube semiconductor properties can be modified, the semiconductor ink composition semiconductive properties have a door number may be significantly degraded. The method and apparatus to improve the characteristics of single-walled carbon nanotube semiconductor ink composition for printing, single-walled carbon nanotube without aggregating a uniformly mixed and embedding the important technological and number appropriate for printing process are disclosed.
The purpose of the invention is printed electronic material printing process for printing the semiconductor thin film semiconductor ink composition that number [...], metallic character semiconductor properties to maximize number [...] semiconductor ink composition are disclosed.
Specifically, the purpose of the invention metallic single-walled carbon nanotube is single-walled carbon nanotube semiconductor properties even if mixedly method and apparatus to determine number printed thin film transistor semiconductor ink composition and an bath [...] number are disclosed.
In addition the purpose of the invention the printing process of the printed electronic element suitable viscosity, surface energy, non-drying, adhesion and cohesion number [...] semiconductor ink composition are disclosed.
In addition purpose of the invention some stable, temperature insensitive to a semiconductor device having excellent storage stability number [...] ink composition are disclosed.
In one example of the present invention, single-walled carbon nanotube semiconductor ink composition, hydrogel, can be distributed number and a solvent.
In one example of the present invention, semiconductor ink may also achieve one purpose of the invention can be but not in the area where number, single-walled carbon nanotube 0 relative to the weight relative to the total composition. 001 ∼ 0. 1% by weight, hydrogel 0. 01 ∼ 1 weight % and dispersion number 0. A 01 ∼ 10 weight % can be.
In one example of the present invention, the purpose of the invention is single-walled carbon nanotube can be achieve in the area number but not one, single-walled carbon nanotube can be metallic single-walled carbon nanotube and a method and apparatus.
In one example of the present invention, the hydrogel can be achieve in the area number but not one purpose of the invention, (meta) acrylate-based compound, organic compounds such as acrylamide hydrogel monomer is selected from the one or more cores can be 3 dimensional are formed.
In one example of the present invention, semiconductor ink composition relative to the weight further includes a surface energy control number can be based on the overall composition, the purpose of the invention can be achieve in the area but not one number, preferably 1 - 25% by weight can be a.
In one example of the present invention, achieve the purpose of the invention can be surface energy control number is not in the area where but one number, methyl acetate, ethyl acetate, isopropyl acetate, n - propyl acetate, sec - butyl acetate, isobutyl acetate, n - butyl acetate, such as cockroaches and it will count with the brush [pu acetate can be selected from one or two or more.
In one example of the present invention, achieve the purpose of the invention semiconductor ink composition can be one number bath method number but not in the area, a) said hydrogel, said dispersion number and said hydrogel solution by mixing a solvent and number bath b) said single-walled carbon nanotube said hydrogel solution SWCNT dispersion step number can be added to a bath.
In one example of the present invention, said b) after, c) said SWCNT dispersion in polymer binder and surface energy conditioning number further comprises one or more can be selected in vitro.
In one example of the present invention, the purpose of the invention printing method using the thin film transistor of semiconductor ink composition number bath method can be achieve in the area but not one number, a) the second conductive gate electrodes on a substrate using an number 1, b) said printing utilizing insulating layer insulating the gate electrode, c) said drain electrode and source electrode insulating layer using the second conductive printing number 2 and d) present in said source electrode and the drain insulation film on the semiconductor layer comprising said semiconductor ink composition can be printed on.
In one example of the present invention, a) step - d) printing step independently screen, flexographic, gravure, inkjet and roll-to-roll printing method can be performed in NaCl.
The present invention refers to metallic character to maximize semiconductor ink composition relates to semiconductor properties, according to one example of the present invention printed thin film transistor metallic single-walled carbon nanotube semiconductor ink composition and an number tank even if semiconductive single-walled carbon nanotube mixedly remarkably improving the semiconductor properties can be equal to or less than.
According to one example of the present invention the printing process of semiconductor ink composition printed electronic element suitable viscosity, surface energy, non-drying, with cohesion and adhesion to the member, in a waiting state stable, temperature insensitive to the pin is excellent in storage stability characteristics.
In addition of the present invention printed a thin film transistor according to one example of two or more semiconductive properties with higher carrier mobility is 100 having...copyright 2001. Figure 1 in the embodiment 1 according to the number of thin film transistor field emission type scanning electron microscope (Field Emission Scanning Electron Microscope, FE-a SEM) Image printing produced therewith are disclosed. Figure 2 shows a schematic indicating the structure of thin film transistor of the present invention also one towing printing are disclosed. Figure 3 in the embodiment 1 according to examples of the thin film transistor printing prepared by the number among others. Objects of the present invention carbon nanotube drawing hereinafter reference number bath method including a semiconductor ink composition and method for thin film transistor that are directionally-described substrate. The drawing of the present invention to one skilled in the event can be transmitted sufficiently to the present invention disclosed herein in order to example number which ball are disclosed. In the present invention refers to number the drawing which may be not limited to the form and the other, the idea of the present invention said drawing are exaggerated for clearly can be shown. In addition in the present invention without special referred % weight % input to unit used by big. [Semiconductor ink composition] In one example of the present invention, single-walled carbon nanotube semiconductor ink composition (Single walled carbon nanotubes, SWCNTs), hydrogel, can be distributed number and a solvent. Such compositions are printed electronic element can be used in printing process for printing the semiconductor thin film. In one example of the present invention, single-walled carbon nanotube 0 entire semiconductor ink composition relative to the weight. 001 ∼ 0. 1% by weight, hydrogel 0. 01 ∼ 1% by weight, dispersion number 0. 01 ∼ 10 weight % and the remainder of the (remaining content) can be a solvent. A good-quality same, printed electronic element suitable printing process of viscosity, surface energy, non-drying, may have adhesive and cohesion, stable and standby state, insensitive to effect temperature may have. As well as satisfying the same semiconductor ink composition number prepared by the printing a thin film transistor is 100 and carrier can be attached to increases. In one example of the present invention, single-walled carbon nanotube either hydrogel, dispersion number, can be combined with components of the present invention carry such as surface energy control number, semiconductor ink composition can be remarkably improved non-complete destruction of semiconductive properties. Single-walled carbon nanotube is single-walled carbon nanotube can be metallic single-walled carbon nanotube and a method and apparatus. Single-walled carbon nanotube semiconducting single-walled carbon nanotube only users having printing such as TFTs printed electronic material applying but preferably, only single-walled carbon nanotube used high pressure liquid coolant or order number same method and apparatus, the step of separating the semiconducting single-walled carbon nanotube in order disclosed. However large cost and production time of packets to be as well as, single-walled carbon nanotube separation method and apparatus in semiconductor properties as a decrease in pressure is bigger disclosed. Single-walled carbon nanotube (semiconducting single-walled carbon nanotube and metallic single-walled carbon nanotube) but either hydrogel, dispersion number, number of the present invention can be combined with components such as carry surface energy, metallic single-walled carbon nanotube semiconducting single-walled carbon nanotube decreases selectively adsorption of the metallic properties while a semiconductor device having excellent properties not effect than expression effect flow tides. The single-walled carbon nanotube is a single walled carbon nanotube 60 - 80% by weight % by weight metallic single-walled carbon nanotube 20 - 40 and semiconductive metal properties can be relatively decreasing metallic single-comprise a quencher compound in the wall it burnt it comes but in the roh tube. In particular carry by number is further combined with energy control surface, metallic single-walled carbon nanotube metal properties of the back yoke can be reduced. The thin film transistor comprises a semiconductor ink composition prepared by the number set on same number prepared by the printing may have better complete destruction ratio. However these effects a number [...] carbon nanotube can be reduced when used metallic material such as metal nanowires. As well as surface energy control number is further can be combined, printability, adherent, compatibility with superior storage stability than print semiconductor ink may have a semiconductor device having excellent properties. In one example of the present invention, single-walled carbon nanotube can be achieved in the area where a mean average diameter of the purpose of the invention but not one number, 0. 9 - 3. 0 nm, specifically 0. 9 - 1. Implementation being 1 nm. A good-quality same, semiconductor properties are well expression can be preferably but not preventing in one aspect, the present invention herein are number one are not disclosed. In one example of the present invention, single-walled carbon nanotube average counter-clockwise cause the purpose of the invention can be achieve in the area but not one number, 0. 1 - 30 micro m, specifically 5 - 15 micro m implementation being. In one example of the present invention, single-walled carbon nanotube is arc discharge, laser [e [syen the law, by chemical vapor deposition or plasma enhanced chemical vapor such as may be prepared by the number but, the number one method can be by various number bath is prepared by the number not. In one example of the present invention, the hydrogel can be achieve in the area number but not one purpose of the invention, (meta) acrylate-based compound, organic compounds such as acrylamide hydrogel monomer is selected from the one or more cores can be 3 dimensional are formed. Semiconductor ink composition ingredients present in the composition satisfying the same polymer chain or the like can be partially decomposes, the viscosity number reduced from that of the bath of printed thin film transistor suitable viscosity, cohesion, adhesion or the like may have. The semiconductor ink compositions for printing is more preferable characteristics, screen, flexographic, gravure, inkjet and roll-to-roll printing process can be used in a variety of, printed electronic storage location in spite of a semiconductor device having excellent properties can be stably maintain equal to or less than. In one example of the present invention, hydrogel (hydrogel) achieve the purpose of the invention can be one number but not in the area, a hydrophilic polymer is 3 dimensional watch neck structure and microcrystalline structure meaning that the water can be formed which expands on, many amount of water to the lattice of a nondegradable polymer filled with a tridimensional structure for holding a liquid such as a macerated means having solid but can be. The single-walled carbon nanotube either hydrogel, dispersion number, number of components of the present invention carry surface energy can be combined with, either hydrogel metallic single-walled carbon nanotube of the metallic single-walled carbon nanotube decreases selectively adsorption characteristics while not effect in a semiconductor device having excellent properties than method and apparatus can be expressed. In one example of the present invention, the hydrogel can be achieve in the area number but not one purpose of the invention, lactic acid, the glycol [lik it buys, acrylic [lik it buys, 1 - hydroxy ethyl methyl acrylate, ethyl the meta oh the [ley which will grow the [thu, propylene glycol, methacrylate, acrylic oh kidd, N - vinylpyrrolidone, methyl meta arc relay [thu, [...], glycol, methacrylate, ethylene glycol, [lik it buys fumarate salts, tetra ethylene glycol die meta arc relay [thu and N provided N ' - methylene bis acrylamide, galacto innumerable difficulties pulley company kara id (Galactomannan polysaccharide), space [thu sword coating (Tragacanth gum), a thickening (Xanthan gum) (Sodium alginate) such as sodium alginate hydrogel polymerized or copolymerized monomer selected from one or more crosslinks to number to number bath or bath can be disclosed. In one example of the present invention, the purpose of the invention is distributed number can be achieve in the area but not one number, number non-ionic surfactants, amphoteric surfactants number, cationic surfactants such as anionic surfactants selected from the number and number can be one or two or more. Preferably non-ionic surfactants number, more specifically on the upper surface of fatty alcohol nonionic surfactants can be a number. Non-ionic surfactants include distributed number number when, said composition including a distributed number printed without affecting the desirable characteristics of the semiconductor thin film formed side but, the number one is the present invention are not disclosed. In one example of the present invention, nonionic surfactants can be achieve the purpose of the invention is in the area where number but not one number, a polyoxyethylene alkyl ether, poly jade hour ethylene region it buys s, polyoxyethylene alkyl phenol ether, [than_ci diffusion s consumption, poly jade hour ethylene consuming [than_ci room s, sucrose region it buys s, fatty acid brush grief s reel [lu, and an alkyl diethanolamines fatty acid mono writing three reel ether such as one or two or more can be selected. In addition aliphatic amine salt, amine salt class 3 to class number 1, 4 quaternary ammonium salts, alkyl the benzene alcoholic beverage phone it buys the salt, α - olefin sulfonic acid salt, alkyl sulfuric acid s reel [lu salt, alkyl ether sulfuric acid s reel [lu salt, alkane cyanopyrrolidine derivative, N - acyl - N - methyl taurine (N provided Acyl provided N-a methyltaurine), the alcoholic beverage gun [swuk new it buys d alkyl s number of cationic or anionic surfactants (Sulfosuccinic Acid dialkyl ester) can be a variety of surfactants number is exemplified. In one example of the present invention, solvent is the purpose of the invention can be achieve in the area but not one number, water, butyl car expense [thol (Butyl carbitol), dimethyl the [phu the raid which burns (dimethyl phthalate; DMP), 1, 2 - dichloroethane (1, 2 a-dichloroethane; DCE), ortho - (ortho-a dichlorobenzene; ODCB) dichloro benzene, nitroparaffins (nitromethane), tetrahydrofuran (tetrahydrofuran; THF), N - methylpyrrolidone (N non-methylpyrrolidone; NMP), dimethyl sulfoxide (dimethyl sulfoxide; DMSO), human keratinous fibres (nitrobenzene), butyl nitrite (butyl nitrite), ethylene glycol (Ethylene glycol), percutaneous (Diethylene glycol), TEG (Triethylene glycol), tetra ethylene glycol (Tetraethylene glycol), polyethylene glycol (Polyethylene glycol; PEG), deep with it will bloom, [leyn the glycol (Dipropylene glycol), propylene glycol monomethyl ether (Propylene glycol monomethyl ether; PGME), ethylene glycol monomethyl ether (Ethylene glycol monomethyl ether), ethylene glycol mono ethyl ether (Ethylene glycol monoethyl ether), ethylene glycol monobutyl ether (Ethylene glycol monobutyl ether), car expense [thol methyl (Methyl carbitol), ethyl car expense [thol (Ethyl carbitol), ethyl car expense [thol acetate (Ethyl carbitol acetate), d ethyl car expense [thol (Diethyl carbitol), TEG monomethyl ether (Triethylene glycol monomethyl ether), ethylene glycol ethyl ether (Triethylene glycol monoethyl ether), glycerin (Glycerin), a high pressure (Triethanolamine), formamide (Formamide), dimethyl formamide (Dimethy fomamide) and 1, 3 - dimethyl - 2 - imidazolidinone (1, 3 a-Dimethyl-a 2 non-imidazolidinone; DMI) can be selected such as one or two or more, specifically butyl car expense [thol this example can be. In one example of the present invention, semiconductor ink composition further comprises a surface energy control number can be, relative to the weight number 1 - 25% by weight relative to the total composition comprising said surface energy can be. Such a surface energy control number is single-walled carbon nanotube, hydrogel, dispersion of the present invention can be combined with components such as number, in particular hydro gel can be combined, reducing metallic single-walled carbon nanotube can be of metallic properties, semiconducting single-walled carbon nanotube semiconductor properties can be increase. As well as the variance of single-walled carbon nanotube and easily attached to a coupling from single-walled carbon nanotube or peeled away from the adhesive layer when tank printed thin film transistor number printed out can be elastic. In addition time standby state can maintain a continuous increase of the dispersion can be can be included to further enhance storage stability. In specific embodiments, such semiconductor ink composition printed on said printing prepared by the number a gate electrode composition so as to improve avoiding the side effects can be caused by surface tension, can be greater than the resolution of the method and apparatus of the device into the form. In one example of the present invention, achieve the purpose of the invention can be surface energy control number is not in the area where but one number, methyl acetate (Methyl acetate), ethyl acetate (Ethyl acetate), isopropyl acetate (Isopropyl acetate), n - propyl acetate (n a-propyl acetate), sec - (sec-a butyl acetate) butyl acetate, isobutyl acetate (isobutyl acetate), n - butyl acetate (n a-butyl acetate), such as cockroaches (amyl acetate) and it will count with the brush [pu acetate (cellosolve acetate) can be selected from one or two or more, specifically ethyl acetate can be is exemplified. In one example of the present invention, semiconductor ink composition further comprises a polymeric binder can be, the purpose of the invention can be achieve in the area but not one number, relative to the weight of said polymer binder 0 based on the overall composition. 0001 - 0. 1% by weight can be a. The polymer binder is single-walled carbon nanotube, hydrogel, dispersion number, number of the present invention can be combined with components such as surface energy, process for preparing number on the variance of the composition at can be easier, the attached to storage stability can be. Carbon nanotube as well as uniformly distributed on the composition can be present in addition to form sufficiently higher than the expression characteristics. In one example of the present invention, said polymer binder in the area where the purpose of the invention can achieve but not one number, (poly (methyl methacrylate)) methyl methacrylate, poly butyl meta [khu relay [thu (poly (butyl methacylate)), cellulose acetate butyrate (cellulose acetate butyrate), (poly (vinyl alcohol)) polyvinyl alcohol, polyvinyl pyrrolidone (poly (vinyl pyrrolidone)), polyacrylamide, polyacrylic acid, poly methacrylic acid, polyethylene oxide, gelatin, polysaccharide, ethyl cellulose, the ethyl with the rule which it will count five [cu hydroxy, hydroxy [...], hydroxy ethyl [tu rock hour pro will bloom and with the rule which it will count five [cu, galacto innumerable difficulties pulley company kara id (Galactomannan polysaccharide), coating space [thu gum (Tragacanth gum), a thickening (Xanthan gum) such as sodium alginate (Sodium alginate) can be selected from one or two or more. [Semiconductor ink composition number bath method] In one example of the present invention, semiconductor ink composition bath method is a number) hydrogel, number and a solvent dispersion by mixing a hydrogel solution number tank and b) said single-walled carbon nanotube hydrogel solution SWCNT dispersion step number can be added to a bath. In one example of the present invention, semiconductor ink composition number bath method is b) after c) polymeric binder and surface energy in said SWCNT dispersion further comprises at least one number can be selected in vitro. In one example of the present invention, said c) step includes applying ultrasonic waves can. Specific as one example, SWCNT dispersion polymer binder, additives such as surface energy control number after charging, applying ultrasonic to be a uniformly distributed. [Printing thin film transistor Number bath method] In one example of the present invention, a number of the printed thin film transistor bath method) using an number 1 on the second conductive gate electrodes (gate), b) said gate electrode using an insulating layer (dielectric) utilizing insulation, c) said second conductive insulating layer coated on the source-drain electrode (drain) number 2 (source) using an and d) said source electrode and the drain present in said insulation film using the semiconductor layer (semiconductor) semiconductor ink composition can be printing. In one example of the present invention, in the above-described number bath method printing prepared by the number a gate electrode, a gate electrode formed at said substrate, an insulating layer formed at said gate electrode, said source electrode and a drain electrode and said drain electrode and said source electrode insulating layer printed on said semiconductor ink composition can be printed semiconductor layer. The schematic diagram of one example of degree 2 precursor to also, gravure equipment roll-to-roll substrate to the printing thread example 3 also shown said semiconductor layer. Specifically, electron or hole printed thin film transistor comprises the source electrode; receiving electronic drain electrode; source and drain electrodes (or lower mid) flow of electron or hole in intermediate number plower gate electrode; and electron or hole passes between the source and drain electrodes can be made up of a semiconductor layer (channel), particularly when the charge carriers can pass through said semiconductor layer to could be bonded each other. The above-mentioned mold semiconductor ink composition printed semiconductor layer, a semiconductor device having excellent properties can be extended for the first input stage. In addition not general adhesive layer formed by carrying a negative film layers reduce, memory can be to increase the information density. In one example of the present invention, said a) step conductive layer is etched substrate having preferably, but not one specifically number, e.g. transparent substrate, be a silicon substrate or polymer substrates. Specifically flexible polymer substrate can be exemplified. Said polymer substrate but not one kind of number, polyether sulfone (PES, polyethersulphone), polyacrylate (PAR, polyacrylate), polyether-imide (PET, polyetherimide), polyethylene naphthalate (PEN, polyethyelenen napthalate), polyphenylene sulfide (PPS, polyphenylene sulfide) (PET, polyethyeleneterepthalate) polyethylene reel [ley the raid which burns, polyarylate (polyallylate), polyimide (polyimide), polycarbonate (PC), cellulose triacetate (TAC), cellulose acetate propionate (CAP: cellulose acetate propinoate) comprising at least one or two such as may be prepared by the number selected from the 2000. In addition can be a wide variety of substrate is used. In one example of the present invention, said number 1 and number 2 conductive ink is the purpose of the invention can be achieved in the area where a conductive ink number but not one, independently inorganic ink (Inorganic Ink), organic ink (Organic Ink), metal inks (Ink Meta search), polymeric ink (Polymer Ink) and conjugates such as one or two or more selected from the ink (Conjugated Ink) can be. Preferably applies a fixed viscosity as well as the easily ink including metallic nanoparticles substrate side but the number without affecting the chemical in an the present invention is not one. In one example of the present invention, said b) step insulating ink which the purpose of the invention can achieve insulating properties in the area but not one number, poly vinyl lung glow orgin resin, poly methyl meta [khu relay [thu orgin thermoplastic resin, polystyrene thermoplastic resin and epoxy resin can be selected from one or two or more. In addition can be variety of isolation is used. In one example of the present invention, said a) to c) in the area where one can achieve the purpose of the invention the printing step number but not, screen, flexographic, gravure, inkjet or roll-to-roll print process can be performed. In addition various printing method can be applied. Hereinafter the present invention through a detailed but in the embodiment, they are more specifically account for the present invention is, in the embodiment of the present invention to form a rights range defined by are not correct.
HLB nonionic surfactants (polyoxyethylene alkyl ether) 4 in number is 12. 1% by weight, methacrylate monomer is polymerized hydrogel (carbomer 940, Lubrizol) 0 3 dimensional watch neck structure. 136% by weight butyl acrylate and car expense [thol hydrogel solution by mixing at room temperature stirring and fully it to a high pressure liquid coolant-gate number. After a single-walled carbon nanotube including single-walled carbon nanotube 67% metallic single-walled carbon nanotube 33% and said hydrogel solution method and apparatus (average diameter 1. 45 nm, an average length of 12. 5 micro m) 0. 016 after charging to 1% by weight at room temperature to allow time utilizing ultrasonic crushing agitating semiconductor ink composition number was high pressure liquid coolant. Said butyl car expense [thol content corresponding final number [...] ink composition prepared by the semiconductor substrate. Said semiconductor ink composition 2 also shown in structure and substrate at right, insulating layer, a drain electrode, a source electrode and a semiconductor layer (semiconductor) number printed on the printed thin film transistor was high pressure liquid coolant. Specifically, 75 micro m thickness of gravure ink (PG-a 007, green onion base ㈜, Korean) process for fabricating substrate silver 0 is provided to detect a gravure printing equipment. 002 Ω / sq/mil his printing so that the gate electrode. Said gate electrode insulation ink (PD-a 100, green onion base ㈜, Korean) printing said equipment was a insulating layer. Said insulating layer silver 0 said equipment is provided to detect a gravure ink (PG-a 007, green onion base ㈜, Korea). 002 Ω / sq/mil, 200 micro m channel length, channel width 3900 micro m printing it with electrode and source electrode was diametrically. Said drain electrode and source electrode between said equipment said printed layer printed semiconductor thin film semiconductor ink composition printed thin film transistor number was high pressure liquid coolant. Said semiconductor ink composition [...] Image printing process using semiconductor thin film printed layer 3 also shown in the nanometer range.
The physical properties of a thin film transistor printing prepared by the number said semiconductor ink composition or said semiconductor ink composition to evaluate, is 100 (on a-off), charge mobility, printability, adherent, like measuring as follows when the storage stability, the results shown in table 1 was represented.
Printability evaluation method is printed semiconductor thin film transition state field emission type scanning microscope (Field Emission Scanning Electron Microscope; FE-a SEM) transition state is best when using 5 point, imparting the most lower transition state if 1 point manner satisfactorily.
Adhesion evaluation method as instantaneous as the printed tape on the semiconductor thin film is stripped off after semiconductor thin film of single walled carbon nanotube applies a force field emission type attachment of a semiconductor single-walled carbon nanotube scanning microscope (Field Emission Scanning Electron Microscope; FE-a SEM) 5 point if the number is not volatile from the film, 1 point if imparting manner and a sense most number of abortion.
Evaluation storage stability at room temperature during 30 10 intervals using UV-a Vis-a NIR spectroscopy semiconductor ink composition viscosity and a dispersibility of change if 5 point remains unchanged, a dispersibility imparting manner if 1 point most an alleviated or precipitation of abortion.
Charge transfer is 100 semiconductor characteristics analyzer (Semiconductor Characterization) manner by using a Agilent 4155C evaluating the degree of abortion.
Said semiconductor characteristics that represents an is 100, the current accumulated between the drain electrode layer is formed on the source electrode and the drain electrode formed insures that between the current non-big. Specifically, applying a voltage between the source and drain electrodes overlap the transistor formed insures that when one switch and a low current amount 5.10, gate layer is formed on the negative voltage to the case it applied to high amount of current flows, the current amount of ratio is 100 (on/off ratio) are disclosed.
In the embodiment 1 (ethyl acetate) surface energy control number 13 in number prepared by the semiconductor ink compositions. 748% by weight which can be further dispersed using ultrasonic [...] further time with the number 1 and number [...] semiconductor ink composition high pressure liquid coolant, conducting equal to in the embodiment 1.
In polyvinyl pyrrolidone (weight average molecular weight of 60,000) 0 in the embodiment 2. 01% by weight hydrogel solution further mixing with the high pressure liquid coolant and number number [...], on conducting the same manner in the embodiment 2. [Comparison example 1]
In the embodiment 1 is not [...] using hydrogel in number and, in the embodiment 1 is connected to the conducting. [Comparison example 2]
In the embodiment 2 is not [...] using hydrogel in number and, in the embodiment 1 is connected to the conducting.
In said table 1, example 1 and comparison example 2 comparison either hydrogel are not used in the printing prepared by the number of thin film transistor 10 according to complete destruction ratio2 Unit metallic single-walled carbon nanotube of metallic properties of single-walled carbon nanotube are very low unit which as it near him money method and apparatus method and apparatus. The transistor used as has been confirmed by the service cannot be executed.
However in the case of 10 in the embodiment 2 in the embodiment 1 and used either hydrogel5 Very itaconic complete destruction unit ratio, in particular in the case of complete destruction surface energy control number is further used in the embodiment 2 has been the first input stage non-and charge mobility. In addition printability, adherent, print ink storage stability better suitability for semiconductor precursor, such as single-walled carbon nanotube is in Figure 1 also affect on solvent uniformly distributed is determined as substrate.
And in the case of polymeric binder (polyvinyl pyrrolidone) is further used in the embodiment 3, complete destruction ratios and charge mobility has been decreases, in addition storage stability than nickel. The present invention relates to a semiconductor ink composition and a printed thin-film transistor using the same. According to an embodiment of the present invention, a semiconductor ink composition includes excellent properties for a semiconductor while having properties suitable for a printing process. The semiconductor ink composition includes: 0.001 to 0.1 wt% of single-walled carbon nanotubes; 0.01 to 1 wt% of a hydrogel; 0.01 to 1 wt% of a dispersant; and a solvent. The single-walled carbon nanotubes can be metallic single-walled carbon nanotubes and semiconductor single-walled carbon nanotubes. COPYRIGHT KIPO 2017 Single-walled carbon nanotube, hydrogel, dispersion number and a solvent including semiconductor ink composition. According to Claim 1, single-walled carbon nanotube 0 relative to the weight relative to the total composition. 001 ∼ 0. 1% by weight, hydrogel 0. 01 ∼ 1 weight % and dispersion number 0. 01 ∼ 10 weight % including a semiconductor ink composition. According to Claim 2, single-walled carbon nanotube is a single walled carbon nanotube including said metallic single-walled carbon nanotube and semiconductor-semiconductor ink composition. According to Claim 2, said hydrogel (meta) acrylate-based compound, organic compound selected from among one or more acrylamide hydrogel monomer 3 dimensional network formed a semiconductor ink composition. According to Claim 4, said lactic acid hydrogel, the glycol [lik it buys, acrylic [lik it buys, 1 - hydroxy ethyl methyl acrylate, ethyl the meta oh the [ley which will grow the [thu, propylene glycol, methacrylate, acrylic oh kidd, N - vinylpyrrolidone, methyl meta arc relay [thu, [...], glycol, methacrylate, ethylene glycol, [lik it buys fumarate salts, tetra ethylene glycol die meta arc relay [thu, N provided N ' - methylene bis acrylamide, galacto innumerable difficulties pulley company kara id (Galactomannan polysaccharide), coating (Tragacanth gum) space [thu sword, a thickening (Xanthan gum) (Sodium alginate) sodium alginate hydrogel selected from the one or more monomer number bath in semiconductor ink composition. According to Claim 4, relative to the total composition number 1 - 25% by weight relative to the weight of said composition with energy control surface further including semiconductor ink composition. According to Claim 6, said surface energy control number is methyl acetate, ethyl acetate, isopropyl acetate, n - propyl acetate, sec - butyl acetate, isobutyl acetate, n - butyl acetate, cockroaches and it will count with the brush [pu acetate including either or two or more selected from semiconductor ink composition. According to Claim 7, relative to the total composition said composition relative to the weight of polymer binder 0. 0001 - 0. 1% by weight further including semiconductor ink composition. According to Claim 8. Said polymer binder poly polymethylmethacrylate, poly butyl meta [khu relay [thu, cellulose acetate butyrate, polyvinyl alcohol, polyvinyl pyrrolidone, polyacrylamide, polyacrylic acid, poly methacrylic acid, polyethylene oxide, gelatin, polysaccharide, ethyl cellulose, hydroxy the ethyl with the rule which it will count five [cu, [...] hydroxy, hydroxy ethyl [tu rock hour pro will bloom and with the rule which it will count five [cu, galacto innumerable difficulties pulley company kara id, space [thu sword coating, one or two or more selected from sodium alginate thickening including semiconductor ink composition. According to Claim 1, said dispersion is a non-ionic surfactant number number including semiconductor ink composition. Number 1 to number 10 either in terms semiconductor ink composition selected from anti anti to bath method number, a) said hydrogel, said hydrogel solution by mixing a solvent dispersion number and said number tank and b) said single-walled carbon nanotube dispersion by adding said hydrogel solution SWCNT step number bath including semiconductor ink composition number bath method. According to Claim 11, said b) after, c) said SWCNT dispersion in polymer binder and surface energy conditioning number selected in vitro at least one further including semiconductor ink composition number bath method. A) the second conductive gate electrodes on a substrate using an number 1, b) said printing utilizing insulating layer insulating the gate electrode, c) said drain electrode and source electrode insulating layer using the second conductive printing number 2 and d) said source electrode and the drain present in both terms selected according to Claim 10 insulation film on the semiconductor layer number 1 anti to print printing including number of thin film transistor semiconductor ink composition bath method. Substrate; said substrate film of the gate electrode; an insulating layer formed at said gate electrode; said insulating layer printed drain electrode and the source electrode; and said drain electrode and said source electrode number 1 on both terms semiconductor ink composition selected according to Claim 10 anti to printed semiconductor layer; printing including a thin film transistor. Printability Adhesion Storage stability Is 100 Charge mobility (cm2 /Vs) In the embodiment 1 4 4 3 2. 0 × 105 0. 45 In the embodiment 2 5 5 4 2. 7 × 105 0. 58 In the embodiment 3 5 5 5 3. 0 × 105 0. 61 Comparison example 1 1 1 2 3. 0 × 102 0. 15 Comparison example 2 2 2 3 3. 3 × 102 0. 25
