SOLAR CELL HAVING ORGANIC BACK REFLECTOR AND SOLAR CELL HAVING DOUBLE-SIDED ETCHED SURFACE STRUCTURE

For basic understanding of the present invention in the embodiment for description is for one or more number of simplified description in the embodiment number [...][...] substrate. The sections may all possible in the embodiment for which are not comprehensive outline, identifying the core element during all elements, all in the embodiment simultaneously cover a range of intended also endured. After the unique number which is in simplified form in the embodiment description as an entry for a number by one or more of general outline [...] are disclosed.

In the embodiment according to of the present invention including a solar reflector rear view one organic, organic processing and HF by the cleaning; TCO deposited on said substrate; said TCO photoactive deposited on thin-film layer; said thin film layer deposited on the PCBM layer; and an upper electrode layer comprises layer deposited on said PCBM.

The present invention refers to one of the reflector rear view using the organic PCBM, collected in accordance to the organic solar cell current density for improving the quality by an unskilled you. The existing reference cell number as well as a small and thin film solar cell according to optimization of the upper interface surface treatment of contact condition with a correlation between the resistance value calculated by improving current density to confirm the relationship of time broadcast receiver.

First TCO prior to deposition, cleaning of substrate prepared by embodiment. Cleaning method is considerably oil, every other inorganic number s7. for standard processing. Wherein the circular standard processing, in order to SC-a 2 and a SC-a 1 & , process is usually based on a non-standard recipe from undergoing the big.

On completion of the cleaning surface of the nozzle holes number then nitrogen gas alone, on the TCO deposition substrate. The deposition process includes a roughened surface for a temperature less number TCO AZO, Al AZO thin film is₂ O₃ Is 1 wt. % Doped ZnO thin film gathering, 300^o C hereinafter database at low pressure of 3 mTorr hereinafter and a transparent conductive layer, the thickness of the films grown on the substrate 1. 21 - 1. 24 μm has been deposited. At this time a roughened surface permitting a small number, the dilute hydrochloric acid HCl 0. 5 - 1% is in a range suitable for use in the, surface structure by means of micro size should. The thin film thickness is about 700 nm when composed of a roughened surface made of cotton resistance 11. 2 ohm/sq and, a lower transmittance than the 82 in the visible light range. 9%, fog rate 41. 3% as signal peptides. It became work and number having a board, into the vacuum chamber to multiple amorphous thin film p, i, n micro thin film depositing and likewise each s7. deposition in this manner. Small number of completed thin film solar cell have different organic anti-native oxide film 3 manner the matter.

In the case of said deposited TCO, a roughened surface for smaller number AZO is used substrate. Said TCO material is available, ITO, AZO, GZO, BZO, ITZO, either IGZO are used.

AZO convexoconcave surface based on thin film conditions for processing are used in dilute hydrochloric acid, dilute hydrochloric acid concentration of 0. 2 to 2. Is the number to 0%, 5 to 30 nm/sec the number encoded into said AZO thin film etching rate range.

Deposition of said PCBM layer are deposited by spin-coating method. A method for producing a substrate with the organic with defined PCBM solution is deposited, spin coating rotation speed of twisted colloid substrate. The silver deposition is performed on each with ten evaporators aluminum electrode are formed on the substrate. PCBM spin coating method for obtaining roughness and uniform thickness of the proceeding, spin coating speed and time for uniformly coating thickness and thin film on a substrate surface according to ensure important disclosed.

AZO is deposited solar cell substrate for optical temperature sputtering process, optimization of the method electrical characteristics, substrate temperature with the measured temperature, the range has a 250 - 400^o C, process pressure is 0. 2 - 1. 5 Pa, in the range of 200 - 500 W power s7.

Optimized AZO convexoconcave surface based on thin film conditions for optimizing the method processing dilute hydrochloric acid (Fe, transmission and mist rate), a roughened surface to compress small concentration of dilute hydrochloric acid number 0. 2 - 2. Is used at 0%, the AZO thin film etching rate range is from about 5 - 30 nm/sec less than 1000.

Double and multi junction thin film solar cell (a a-Si/a-a SiGe, a a-SiOx/a a-Si, a-a Si/uc a-Si, a-a SiOx/a a-Si/uc a-Si, a-a SiGe/uc a-Si, a-a SiGe/uc-a SiGe) item via the application of optimized PCBM rear view reflective layer longwave response is improved as follows.

In the embodiment according to table 1 below the reflector rear view of the present invention organic one, set A (HF treatment), current density of result set B (Organic cleaning + HF treatment) are disclosed. As shown in table 1 reference center on PCBM is characteristic of the solar cell by depositing organic cleaning operates and HF treatment confirming the current density can be improved.

In the embodiment according to Figure 1 of the present invention organic solar cell including one reflector rear view existing solar cell between L a-I a-V result graph are disclosed. As in Figure 1 the, reference contrast set A comparison of inventions, but both reduced B open-circuit voltage, current density aspect rather increased but, in particular set B 11 comprises a current maximum ultrasonic energy density. 7 mA/cm² Reference to (9. 8 mA/cm² ) 12% improved compared to degree can be beat. This thin thickness of thin film deposited applied PCBM (32. 8 nm, set B) easily, Metal/PCBM/n-a type uc a-Si: H is effective can be that of a carrier collection according to contact interface, can be of any thickness increase is greater than that of a factor. (Comparison - 50. 6 nm, set A)

In the embodiment according to Figure 2 of the present invention organic solar cell including one reflector rear view between spectral response characteristics graph existing solar cell are disclosed. Reference is set B when compared to the increase in the graph by selecting a wavelength in the range of spectral response characteristics can be.

In the embodiment according to of the present invention heretofore described including solar cells when the reflector rear view organic one, one of the present invention is described hereinafter in the embodiment according to the double-sided etching surface solar cells comprising a structure to you.

In the embodiment according to the solar cell of the present invention one-sided etching surface structure, etching is arranged in the front and back glass substrate; said TCO on a glass substrate; said TCO photoactive on thin-film layer; comprising thin-film layer on said upper electrode layer.

The present invention refers to glass substrate to increase (double-sided) and back through a short-wave region has an improved effect of nano-sized curved U transmission of long wavelength region is improved by transmission of medium frequency market and it should, Honeycomb pyramid structure, TCO by depositing shift according to current density due to the improved reflection absorbs some light emitted from parts of the solar battery open-circuit voltage and an effect improving effect of time by checking the correlation of broadcast receiver.

Said glass substrate is composed of a two-step etch process is performed, the second metal layer include HF 1 using front surface etching through the honeycombed body structure formed, in terms of etching back etching is performed on the difference 2.

Figure 3 shows a double-sided etching method of the present invention also one in the embodiment according to surface structure solar cells number order of accesses in a small degree.

2 a-step relates to double-sided etching surface structure for improving short-wave region, the second metal layer include normalization pattern-based HF 0 1. 5% solution surface etching through the honeycombed body forming a step, in this case 2 to a cleaning process again for the second metal layer, wherein the circular cleaning process existing SC-a 1, SC-a 2 standardized RCA process such as big. After finishing cleaning, again using a solution used for the etching back corresponding to HF 5 - 10%.

Reflection wavelength region in order to improve short-wave region degrees shift and the conditions of e.g. thickness of and doping substances and doping concentration above generators are connected TCO can improve, the ITO is used when title, AZO, GZO, BZO, ITZO, IGZO substance such as which, according to the doping concentration when s402. ITO or ITZO, such as doping concentration 5% or more in the case of excess material GZO, reduce thickness s7. reflectivity change. At this time thickness calculating range it is cotton resistance 20 ohm/sq thickness less than 1000 320 nm hereinafter as a reference. Low doping AZO and, in the case of BZO, considering Fe TCO with capping electrodes formed the substrate grown on, thickness 1 - 1. 2 μm to 0.26. In particular BZO is doped source amount the quantity of said selectively an incident according to first and there can be defined than the thickness 2 times. However, 3 μm thickness rather TCO thin film itself increasing in one transfer threshold is recycled to structure utilizing thereof can.

Said wavelength shift to short-wave region on a glass substrate thickness and doping conditions TCO reflected depending on degrees of improvement in terms of efficiency. Said TCO material is available, ITO, AZO, GZO, BZO, ITZO, either IGZO are disclosed.

4a - 4f is one in the embodiment according to of the present invention also comprising a structure as an etch mask in the front and back surface etching double solar cell [...] various forms of substrate are disclosed. Structure based on a substrate utilizing various forms can be made. Stage, are described herein in order structure includes back front achieved disclosed.

In the embodiment of the present invention the present invention is any person with skill in the art [...] number for description is to number encoded in the art embodiment or using a ball. In the embodiment of the present invention are apparent in the art to various modifications for such person with skill in the art will, defined herein in the embodiment of the present invention are made without deviating from the general principle can be applied to other range. Thus, the present invention refers to number herein are confined within the [...] rather than in the embodiment, the number [...] principles and novel features herein will be interpreted consistent most wide sense range.