Semiconductor memory device with selection patterns, storage patterns, and a gap fill layer and method for fabricating the same
26-12-2023 дата публикации
Номер:
US0011856794B2
Принадлежит: Samsung Electronics Co., Ltd.
Контакты:
Номер заявки: 78-43-1736
Дата заявки: 30-06-2021
CPC - классификация
HH1H10H10BH10B6H10B63H10B63/H10B63/2H10B63/24H10B63/8H10B63/80H10B63/84H10NH10N7H10N70H10N70/H10N70/0H10N70/06H10N70/063H10N70/2H10N70/23H10N70/231H10N70/8H10N70/82H10N70/826H10N70/84H10N70/841H10N70/88H10N70/882H10N70/8825H10N70/8828IPC - классификация
HH1H10H10BH10B6H10B63H10B63/H10B63/0H10B63/00H10NH10N7H10N70H10N70/H10N70/0H10N70/00Цитирование НПИ
257/773257/E21.294