Through array contact structure of three-dimensional memory device

10-10-2023 дата публикации

Номер:

US0011785776B2

Автор: Zhenyu Lu, Wenguang Shi, GuanPing Wu, Xianjin Wan, Baoyou CHEN

Принадлежит: YANGTZE MEMORY TECHNOLOGIES CO., LTD.

Контакты:

Номер заявки: 90-44-1794

Дата заявки: 14-09-2022

CPC - классификация

H H0 H01 H01L H01L2 H01L23 H01L23/H01L23/5 H01L23/52 H01L23/522 H01L23/5226 H01L23/53 H01L23/535 H1 H10 H10B H10B4 H10B43 H10B43/H10B43/1 H10B43/10 H10B43/2 H10B43/27 H10B43/3 H10B43/35 H10B43/4 H10B43/40 H10B43/5 H10B43/50

IPC - классификация

H H0 H01 H01L H01L2 H01L23 H01L23/H01L23/5 H01L23/52 H01L23/522 H01L23/5226 H01L23/53 H01L23/535 H1 H10 H10B H10B4 H10B43 H10B43/H10B43/1 H10B43/10 H10B43/2 H10B43/27 H10B43/3 H10B43/35 H10B43/4 H10B43/40 H10B43/5 H10B43/50

Цитирование НПИ

257/314
Chinese Office Action directed to related Chinese Patent Application No. PCT/CN2018/077719 with attached English-language translation, dated Oct. 14, 2019; 10 pages.
International Search Report and Written Opinion of the International Searching Authority directed to related International Patent Application No. PCT/CN2018/077719, dated Jun. 4, 2018; 8 pages.
Japanese Application No. 2019-570606, Office Action dated Nov. 16, 2020; English Translation from EPO Global Dossier, 18 pages.
Office Action filed in application No. 18763685.7, dated Oct. 16, 2020; 9 pages.

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