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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 1571. Отображено 100.
03-05-2012 дата публикации

Superhydrophobic films

Номер: US20120107556A1
Автор: Berkan K. Endres, Jun-Ying Zhang, Mark K. Debe, Terry L. Smith
Принадлежит: 3M Innovative Properties Co

Superhydrophobic films and methods of making such films are disclosed. More particularly, superhydrophobic films having durable nanostructures with high contrast ratios and various methods of producing such films are disclosed.

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Номер записи: 1
25-07-2013 дата публикации

Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same

Номер: US20130187130A1
Автор: Gabriel A. Matus, Mathew L. Scullin
Принадлежит: Alphabet Energy Inc

Structure including nano-ribbons and method thereof. The structure include multiple nano-ribbons. Each of the multiple nano-ribbons corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 μm. Each of the multiple nano-ribbons corresponds to a cross-sectional area associated with a ribbon thickness, and the ribbon thickness ranges from 5 nm to 500 nm. Each of the multiple nano-ribbons is separated from at least another nano-ribbon selected from the multiple nano-ribbons by a second distance ranging from 5 nm to 500 nm.

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Номер записи: 2
26-12-2013 дата публикации

Method of Making a Microelectronic Interconnect Element With Decreased Conductor Spacing

Номер: US20130341299A1
Автор: Endo Kimitaka, Haba Belgacem, KUBOTA Yoichi, Ryu Chang Myung
Принадлежит:

A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines. 1. A method of forming a microelectronic interconnect element , comprising:(a) given a layered element including first and second exposed metal layers and an etch barrier layer sandwiched between the first and second metal layers, defining first metal lines by a process including etching the first exposed metal layer;(b) forming a dielectric layer overlying the first metal lines; and(c) defining second metal lines by a process including etching the second exposed metal layer.2. A method of forming a microelectronic interconnect element as claimed in claim 1 , wherein the etch barrier layer is conductive and the method further includes removing a portion of the etch barrier layer between the first metal lines prior to step (b) and removing a portion of the etch barrier layer between the second metal lines after step (c).3. A method of forming a microelectronic interconnect element as claimed in claim 1 , wherein a pitch between a metal line of the first metal lines and an adjacent metal line of the second metal lines is smaller than a pitch between the first metal lines obtained by etching the first exposed metal layer and is smaller than a pitch between the second metal lines obtained by etching the second exposed metal layer.4. A method of forming a microelectronic interconnect element claim 1 , comprising:(a) given a layered element including a first thin exposed metal layer having a first thickness, a second exposed ...

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Номер записи: 3
02-01-2014 дата публикации

Nano/micro roller bearing having tolerance compensation function and method of manufacturing the same

Номер: US20140003746A1
Автор: Kim Dae Eun, Yoo Shin Sung
Принадлежит: INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY

A roller bearing having a tolerance compensation function, which is capable of being properly deformed and absorbing a processing tolerance within a range of an elastic region even when a distance between MEMS structures is changed due to the processing tolerance of the MEMS structures, being deformed to a minimum and rolled while maintaining a smooth contact with the MEMS structures by uniformly dispersing vertical loads applied from the MEMS structures through a plurality of the bearings, and thus minimizing the occurrence of abrasion and preventing damage to the bearing, and a method of manufacturing the same are provided. The roller bearing includes a tube-shaped roller bearing having a C-shaped section structure in which a gap having a specific interval is formed on one side of the tube-shaped roller bearing. 1. A roller bearing installed between two Micro Electro Mechanical System (MEMS) structures performing a relative movement and configured to have a tolerance compensation function , the roller bearing comprising:a tube-shaped roller bearing having a C-shaped section structure in which a gap having a specific interval is formed on one side of the tube-shaped roller bearing.2. The roller bearing of claim 1 , wherein the roller bearing is made of silicon.3. The roller bearing of claim 1 , wherein an internal space of the roller bearing is filled with aluminum.4. The roller bearing of claim 1 , wherein an internal space of the roller bearing is filled with polymer.5. A Micro Electro Mechanical System (MEMS) apparatus comprising a plurality of bearings installed between two MEMS structures performing a relative movement and each configured to have a tolerance compensation function and perform a rolling movement claim 1 ,wherein each of the bearings comprises a tube-shaped roller bearing having a C-shaped section structure in which a gap having a specific interval is formed on one side of the tube-shaped roller bearing.6. The MEMS apparatus of claim 5 , wherein ...

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Номер записи: 4
06-02-2014 дата публикации

Composition and process for selectively etching metal nitrides

Номер: US20140038420A1
Автор: Emanuel I. Cooper, Jeffrey A. Barnes, Nicole E. Thomas, Peng Zhang, Steven Lippy, Tianniu Chen
Принадлежит: Advanced Technology Materials Inc

A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

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Номер записи: 5
27-02-2014 дата публикации

METHOD OF FORMING FINE PATTERN, AND DEVELOPER

Номер: US20140054265A1
Автор: Fujikawa Shigenori, Hayakawa Harumi, Miyagi Ken, Senzaki Takahiro
Принадлежит:

A method of forming a fine pattern, including: a phase separation step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate, and then the layer is heated for phase separation of the layer; a decomposition step in which at least a portion of a phase of at least one block of the plurality of blocks constituting the block copolymer is decomposed; a selective removal step in which the layer is immersed in a developing solution to selectively remove a phase containing decomposed blocks to form a nano structure; and an etching step in which the substrate is subjected to etching by using the nano structure as a mask; and a main component of the developing solution is an organic solvent having an SP value of 7.5 to 11.5 (cal/cm), and having vapor pressure of less than 2.1 kPa at 25° C., or is benzene that may be substituted by an alkyl group, an alkoxy group, or a halogen atom, and the developing solution further contains metal alkoxide. 1. A method of forming a fine pattern comprising:a phase separation step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate, and then the layer is heated for phase separation thereof;a decomposition step in which at least a portion of a phase of at least one block of the plurality of blocks constituting the block copolymer in the layer is decomposed;a selective removal step in which the layer is immersed in a developing solution to selectively remove a phase containing blocks decomposed in the decomposition step to form a nano structure; andan etching step in which the substrate etched using the nano structure as a mask;{'sup': 3', '1/2, 'wherein a main component of the developing solution is an organic solvent having an SP value of 7.5 to 11.5 (cal/cm), and having a vapor pressure of less than 2.1 kPa at 25° C., or is benzene that may be substituted by an alkyl group, an alkoxy group, or a halogen atom, and wherein the developing ...

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Номер записи: 6
27-03-2014 дата публикации

Mems-based cantilever energy harvester

Номер: US20140087509A1
Автор: Bruce E. Gnade, Erika Fuentes-Fernandez, Pradeep Shah, Wardia Mechtaly-Debray
Принадлежит: Texas Micropower Inc, University of Texas System

The claimed invention is directed to integrated energy-harvesting piezoelectric cantilevers. The cantilevers are fabricated using sol-gel processing using a sacrificial poly-Si seeding layer. Improvements in film microstructure and electrical properties are realized by introducing a poly-Si seeding layer and by optimizing the poling process.

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Номер записи: 7
03-01-2019 дата публикации

IMPACT ELEMENT FOR A SENSOR DEVICE AND A MANUFACTURING METHOD

Номер: US20190002276A1
Автор: LAHDENPERÄ Juha, MUTIKAINEN Risto
Принадлежит:

A sensor device and a method for manufacturing the sensor device. The sensor device is equipped with an impact element that includes an inner part of dielectric bulk material and an outer part of diamond-like coating material. The inner part is made to be lower at the edges than in the middle, and the outer part is formed of a diamond-like coating layer that covers the inner part. The DLC coated impact element is mechanically more robust than the rectangular prior art structures. Furthermore, the tapered form of the impact element improves conductivity of the DLC coating such that discharge of static buildup in the impact element is effectively enabled. 1. A sensor device including:an inertial mass carrying a movable electrode;a base including a stationary electrode opposite the inertial mass;whereinthe inertial mass is suspended to enable movement towards the stationary electrode;the base includes an impact element that extends towards the inertial mass;the impact element includes an inner part of bulk material and an outer part of diamond-like coating material, whereinthe inner part is lower at the edges than in the middle;the outer part is formed of a diamond-like carbon layer that covers the inner part.2. The sensor device of claim 1 , whereinthe inertial mass extends as a plane in two in-plane directions;the sensor device includes a suspending spring structure that enables displacements of the inertial mass in an out-of-plane direction, wherein the out-of-plane direction is perpendicular to the in-plane directions.3. The sensor device of claim 2 , wherein the suspending spring structure is configured to enable rotation of the inertial mass about an axis aligned to the plane of the inertial mass.4. The sensor device of claim 2 , wherein the suspending spring structure is configured to enable transversal motion of the inertial mass in the out-of-plane direction.5. The sensor device of claim 1 , whereina first gap is formed between a surface of the stationary ...

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Номер записи: 8
03-02-2022 дата публикации

Method to form a rough crystalline surface

Номер: US20220033246A1
Автор: Ting-Jung Chen
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Various embodiments of the present disclosure are directed towards a method to roughen a crystalline layer. A crystalline layer is deposited over a substrate. A mask material is diffused into the crystalline layer along grain boundaries of the crystalline layer. The crystalline layer and the mask material may, for example, respectively be or comprise polysilicon and silicon oxide. Other suitable materials are, however, amenable. An etch is performed into the crystalline layer with an etchant having a high selectivity for the crystalline layer relative to the mask material. The mask material defines micro masks embedded in the crystalline layer along the grain boundaries. The micro masks protect underlying portions of the crystalline layer during the etch, such that the etch forms trenches in the crystalline layer where unmasked by the micro masks.

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Номер записи: 9
21-01-2016 дата публикации

Symmetrical mems accelerometer and its fabrication process

Номер: US20160018436A1
Автор: Chen Sun, Leiyang YI, Lianzhong Yu
Принадлежит: Institute of Geology and Geophysics of CAS

A symmetrical MEMS accelerometer. The accelerometer includes a top half and a bottom half bonded together to form the frame and the mass located within the frame. The frame and the mass are connected through resilient beams. A plurality of hollowed parts and the first connecting parts are formed on the top and bottom side of the mass, respectively. The second connecting parts are formed on the top and bottom side of the frame, respectively. The resilient beams connect the first connecting part with the second connecting part. Several groups of comb structures are formed on top of the hollowed parts. Each comb structure includes a plurality of moveable teeth and fixed teeth. The moveable teeth extend from the first connecting part and the fixed teeth extend from the second connecting part. Capacitance is formed between the movable teeth and the fixed teeth. Since the accelerometer is symmetrical with a large mass, it has a large capacitance with a low damping force.

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Номер записи: 10
21-01-2016 дата публикации

DISPLAY DEVICE AND MANUFACTURING METHOD OF SAME

Номер: US20160018636A1
Автор: ANDOU Naohisa, Kawanakago Hiroshi
Принадлежит: PIXTRONIX INC.

[Problem] An object of the present invention is to electrically connect a substrate and an opposing substrate. [Resolving Means] A display device includes a first substrate stacked with a circuit layer for displaying an image, the circuit layer covered by an insulating film , the circuit layer including a first conductive film , formed with a penetration hole in the insulating film , and formed with a hole in a first conductive film ; a second substrate formed with a second conductive film , disposed so that insulating film and the second conductive film are opposed; and a conductive material interposed between the first substrate and the second substrate , so that the conductive material touches an inner face of the hole in the first conductive film and the second conductive film

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Номер записи: 11
17-04-2014 дата публикации

Production process for a micromechanical component and micromechanical component

Номер: US20140103497A1
Автор: Benjamin Schmidt, Christoph Schelling, Friedjof Heuck, Mirko Hattass
Принадлежит: ROBERT BOSCH GMBH

A production process for a micromechanical component includes at least partially structuring at least one structure from at least one monocrystalline silicon layer by at least performing a crystal-orientation-dependent etching step on an upper side of the silicon layer with a given ( 110 ) surface orientation of the silicon layer. For the at least partial structuring of the at least one structure, at least one crystal-orientation-independent etching step is additionally performed on the upper side of the silicon layer with the given ( 110 ) surface orientation of the silicon layer.

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Номер записи: 12
22-01-2015 дата публикации

REACTIVE ION ETCHING

Номер: US20150021745A1
Автор: Eley Rebecka, Hawke Tracey, Sturland lan, Venables Mark
Принадлежит: Atlantic lnertial Systems Limited

A method of reactive ion etching a substrate to form at least a first and a second etched feature () is disclosed. The first etched feature () has a greater aspect ratio (depth:width) than the second etched feature (). In a first etching stage the substrate () is etched so as to etch only said first feature () to a predetermined depth. Thereafter in a second etching stage, the substrate () is etched so as to etch both said first and said second features () to a respective depth. A mask () may be applied to define apertures corresponding in shape to the features (). The region of the substrate () in which the second etched feature () is to be produced is selectively masked with a second maskant () during the first etching stage, The second maskant () is then removed prior to the second etching stage. 1. A method of reactive ion etching a substrate to form at least a first and a second etched feature , wherein the first etched feature has a greater aspect ratio (depth:width) than said second etched feature , the method comprising the steps of:in a first etching stage etching said substrate as to etch only said first feature to a predetermined depth;thereafter in a second etching stage etching said substrate so as to etch both said first and said second features to a respective depth.2. A method according to claim 1 , comprising:applying a masking material to a surface of the substrate to define first and second apertures corresponding to the shape of said first and second features;in said first etching stage selectively etching said substrate only through said first aperture to etch the first etched feature to a predetermined depth;thereafter in said second etching stage, etching said substrate through both said apertures thereby to etch both said first and second features to a respective depth.3. A method according claim 1 , to claim 1 , wherein each feature is etched to substantially the same depth.4. A method according to wherein each feature is etched through the ...

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Номер записи: 13
21-01-2021 дата публикации

Methods for tuning plasma potential using variable mode plasma chamber

Номер: US20210020404A1
Автор: Shawming Ma, Stephen E. Savas
Принадлежит: Beijing E Town Semiconductor Technology Co Ltd, Mattson Technology Inc

Plasma processing apparatus and associated methods are provided. In one example, a method can include admitting a process gas into a plasma chamber. The method can include exciting with RF energy an inductive coupling element to initiate ignition of a plasma induced in the process gas. The method can include adjusting an RF voltage of an electrostatic shield located between the inductive coupling element and the plasma chamber. The electrostatic shield can have a stray capacitance to a ground reference. The method can include conducting an ion-assisted etching process on the workpiece based at least in part on the RF voltage of the electrostatic shield.

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Номер записи: 14
10-02-2022 дата публикации

SILICON CARBIDE NANONEEDLES AND FABRICATION THEREOF

Номер: US20220040463A1
Автор: Bora Mihail, Conway Adam M., Frye Clint D., Funaro Devin Joseph, Grivickas Paulius Vytautas, Hall David L., Voss Lars F.
Принадлежит:

A product includes an elongated carbon-containing pillar having a bottom and a tip opposite the bottom. The width of the pillar measured 1 nm below the tip is less than 700 nm. A method includes masking a carbon-containing single crystal for defining masked regions and unmasked regions on the single crystal. The method also includes performing a plasma etch for removing portions of the unmasked regions of the single crystal, thereby defining a pillar in each unmasked region, and performing a chemical etch on the pillars at a temperature between 1200° C. and 1600° C. for selectively reducing a width of each pillar. 1. A product , comprising:an elongated carbon-containing pillar having a bottom and a tip opposite the bottom, wherein the width of the pillar measured 1 nm below the tip is less than 700 nm.2. The product as recited in claim 1 , wherein the tip is rounded.3. The product as recited in claim 1 , wherein the pillar extends from a single crystal substrate having a bulk composition that is the same as the bulk composition of the pillar.4. The product as recited in claim 3 , wherein the pillar has no higher concentration of defects per unit volume than the single crystal substrate.5. The product as recited in claim 1 , wherein the pillar has a faceted peripheral outer surface.6. The product as recited in claim 1 , wherein the pillar has a rounded peripheral outer surface.7. The product as recited in claim 6 , wherein the peripheral outer surface of the pillar is rounded therealong from the bottom to the tip of the pillar.8. The product as recited in claim 1 , wherein the pillar has no oxidation on an outer surface thereof.9. The product as recited in claim 1 , wherein the pillar is SiC.10. The product as recited in claim 1 , wherein the pillar is diamond.11. The product as recited in claim 1 , wherein the pillar has an inner channel extending along a longitudinal axis thereof.12. The product as recited in claim 11 , wherein the pillar extends from a single ...

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Номер записи: 15
05-02-2015 дата публикации

METHOD OF PATTERNING PLATINUM LAYER

Номер: US20150037974A1
Автор: Lin Yu-Chi, Lu Hsin-Yi, Wang Jeng-Ho
Принадлежит: UNITED MICROELECTRONICS CORP.

A method of patterning a platinum layer includes the following steps. A substrate is provided. A platinum layer is formed on the substrate. An etching process is performed to pattern the platinum layer, wherein an etchant used in the etching process simultaneously includes at least a chloride-containing gas and at least a fluoride-containing gas. 1. A method of patterning a platinum layer , comprising:providing a substrate;forming a platinum layer on the substrate; andperforming an etching process to pattern the platinum layer, wherein an etchant used in the etching process comprises at least a chloride-containing gas and at least a fluoride-containing gas, and a flow rate of the chloride-containing gas is substantially lower than a flow rate of the fluoride-containing gas.2. The method of patterning a platinum layer according to claim 1 , wherein the etchant comprises a specific gas ratio of the chloride-containing gas to the fluoride-containing gas.3. (canceled)4. The method of patterning a platinum layer according to claim 1 , wherein the etchant comprises a variable gas ratio of the chloride-containing gas to the fluoride-containing gas.5. The method of patterning a platinum layer according to claim 4 , wherein the variable gas ratio comprises a gradually decreasing gas ratio.601. The method of patterning a platinum layer according to claim 4 , wherein the variable gas ratio of the chloride-containing gas to the fluoride-containing gas comprises a variable ratio of a flow rate of the chloride-containing gas to a flow rate of the fluoride-containing gas claim 4 , and the variable gas ratio ranges from to .7. (canceled)8. The method of patterning a platinum layer according to claim 1 , wherein the fluoride-containing gas comprises SF claim 1 , SF claim 1 , CF claim 1 , CHF claim 1 , CHF claim 1 , CHF or a combination thereof.9. The method of patterning a platinum layer according to claim 1 , wherein a formula of a component of the fluoride-containing gas has a ...

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Номер записи: 16
11-02-2016 дата публикации

APPARATUS AND METHOD TO FABRICATE MEMS DEVCE

Номер: US20160039668A1
Автор: Zhang Cerina
Принадлежит:

A MEMS device and fabrication of MEMS device is disclosed. The method includes providing a device layer, disposing a sacrificial layer over a first surface of the device layer, forming at least one MEMS feature in the device layer, wherein the formed MEMS feature is attached to the sacrificial layer. Selective portions of the sacrificial layer are removed so as to permit movement of the formed MEMS feature. 1. A method to fabricate a MEMS device , comprising:providing a device layer;disposing a sacrificial layer over a first surface of the device layer;forming at least one MEMS feature in the device layer, wherein the formed MEMS feature is attached to the sacrificial layer; andremoving selective portions of the sacrificial layer so as to permit movement of the formed MEMS feature.2. The method of claim 1 , further including:providing a handle layer with a cavity; andattaching the handle layer to the device layer, using a portion of the sacrificial layer.3. The method of claim 2 , further including:forming a plurality of standoff on a second surface of the device layer, second surface opposite to the first surface;depositing a metal film over the plurality of standoff;providing a base substrate with a plurality of conductive pads; andbonding the metal film deposited over the plurality of standoff with the plurality of conductive pads on the base substrate.4. The method of claim 1 , wherein the selective portions of the sacrificial layer is removed by a wet etch process.5. The method of claim 1 , wherein the selective portions of the sacrificial layer is removed by a dry etch process.6. The method of claim 2 , wherein forming the at least one MEMS feature further including subjecting the device layer to a plasma and selectively etching a portion of the device layer from a second surface claim 2 , second surface opposite to the first surface claim 2 , the sacrificial layer preventing the plasma to pass through a trench formed from the second surface of the device ...

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Номер записи: 17
18-02-2021 дата публикации

Support structure for mems device with particle filter

Номер: US20210047176A1
Автор: Chia-Hua Chu, Chun-Wen Cheng, Wen Cheng Kuo
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

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Номер записи: 18
15-02-2018 дата публикации

MEMS Sensor, Especially Pressure Sensor

Номер: US20180044166A1
Автор: Lemke Benjamin, Teipen Rafael
Принадлежит:

A MEMS sensor with improved overload resistance for metrological registering of a measured variable comprises a plurality of layers, especially silicon layers, arranged on one another. The layers include at least one inner layer, which is arranged between a first layer and a second layer, and in the inner layer there is provided extending perpendicularly to the plane of the inner layer through the inner layer at least one cavity, on which borders externally at least sectionally and forming a connecting element, a region of the inner layer, which is connected with the first layer and the second layer. A lateral surface of the connecting element externally at least sectionally bordering the cavity has in an end region facing the first layer a rounding decreasing the cross sectional area of the cavity in the direction of the first layer, and has in an end region facing the second layer a rounding decreasing the cross sectional area of the cavity in the direction of the second layer. 115-. (canceled)16. A MEMS sensor for metrological registering of a measured variable , comprising:a plurality of layers arranged on one another, wherein:said plurality of layers include at least one inner layer, which is arranged between a first layer and a second layer, andin said inner layer there is provided extending perpendicularly to the plane of said inner layer through said inner layer at least one annular cavity, on which borders externally and forming a connecting element, a region of said inner layer, which is connected with said first layer and said second layer, and which surrounds said cavity annularly; said connecting element in the region of said inner layer is isolated by said cavity completely from an additional region surrounded by said cavity; anda lateral surface of said connecting element externally bordering said cavity has in an end region facing said first layer a rounding decreasing the cross sectional area of said cavity in the direction of said first layer, and ...

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Номер записи: 19
03-03-2022 дата публикации

Systems, Devices, and/or Methods for Images

Номер: US20220064057A1
Автор: Kelley Dylan
Принадлежит:

Certain exemplary embodiments can provide a method comprising, via computer aided design, designing parts of an object that comprises an outer shell and an inner body, at least one of the outer shell and the inner body defining a specific volume negative space relief. In certain exemplary embodiments, the specific volume negative space relief defines a channel constructed to pass at least one of a fluid and a gas. 1. A method comprising:fabricating a glass vessel, the glass vessel comprising an outer shell coupled to an inner body, wherein a negative space relief defines a channel between the outer shell and the inner body, which channel is constructed to pass at least one of a fluid and a gas.2. The method of claim 1 , wherein:the negative space relief is based upon a vectorized digital image.3. The method of claim 1 , further comprising:cutting a vinyl image from a vectorized digital image, wherein said negative space relief is formed utilizing said vinyl image.4. The method of claim 1 , further comprising:turning the inner body and the outer shell on a lathe;shaping at least one of the inner body and outer shell with a paddle.5. A method comprising:fabricating an outer shell of a vessel;fabricating an inner body of the vessel that defines a negative space relief, the negative space relief created via a vectorized digital image;coupling the outer shell around the inner body, wherein the negative space relief defines a channel between the outer shell and the inner body, which channel is constructed to pass at least one of a fluid and a gas.6. The method of claim 5 , wherein:the vessel comprises glass.7. The method of claim 5 , wherein:the specific volume negative space relief is defined via use of a working mask produced via 3D printing.8. The method of claim 5 , wherein:the specific volume negative space relief is defined via abrasive blasting with an abrasive resistant mask.9. The method of claim 5 , wherein:the specific volume negative space relief is defined ...

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Номер записи: 20
26-02-2015 дата публикации

Method and apparatus for fabricating electrostatic capacitance-type acceleration sensor and electrostatic capacitance-type acceleration sensor

Номер: US20150053003A1
Автор: Takahiro Tsunoda, Takashi Kunimi, Toru Sekine
Принадлежит: Akebono Brake Industry Co Ltd, Japan Oil Gas and Metals National Corp

In a method for fabricating an electrostatic capacitance-type acceleration sensor having a capacitor which electrostatic capacitance between a movable electrode and a fixed electrode changes according to the displacement of the movable electrode, the method includes: a step of forming a groove on at least one of the surface of an insulative substrate and the surface of a semiconductor substrate; a step of forming a hole in the semiconductor substrate so as to penetrate the semiconductor substrate at a position communicating with a passage formed by the groove; and a step of forming an electrode extraction hole in the insulative substrate so as to penetrate the insulative substrate, at a position communicating with the passage formed by the groove.

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Номер записи: 21
26-02-2015 дата публикации

Method for Manufacturing a MEMS Device and MEMS Device

Номер: US20150054097A1
Автор: Alfons Dehe, Christoph Glacer, Soenke Pirk
Принадлежит: INFINEON TECHNOLOGIES AG

A method for manufacturing a MEMS device includes providing a cavity within a layer adjacent to a sacrificial layer. The cavity extends to the sacrificial layer and includes a capillary slot protruding into the layer. The sacrificial layer is removed by exposing the sacrificial layer to an etching agent that is introduced through the cavity.

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Номер записи: 22
15-05-2014 дата публикации

Method for the Prevention of Suspended Silicon Structure Etching During Reactive Ion Etching

Номер: US20140131818A1
Автор: Kuei-Sung CHANG, Ting-Hau Wu
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during overetching periods of DRIE processes.

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Номер записи: 23
05-03-2015 дата публикации

New Lithographic Method

Номер: US20150059449A1
Автор: Dekker Cornelis, Schneider Gregory, SONG BO, Wu Mengyue, Xu Qiang, Zandbergen Henny
Принадлежит:

A method for removing a high definition nanostructure in a partly free-standing layer, the layer, a sensor comprising said layer, a use of said sensor, and a method of detecting a species, and optional further characteristics thereof, using said sensor. The sensor and method are suited for detecting single ions, molecules, low concentrations thereof, and identifying sequences of base pairs, e.g., in a DNA-strand. 1. A method for removing a high definition nanostructure in a partly free-standing layer with a thickness of less than 5 nm , comprising the steps of:a) providing a radiation source, a means for high precision directing radiation, a sample, the sample comprising the free-standing layer, a support for largely supporting the layer, and one or more means for self-repairing of the layer,b) activating said means for self-repairing, andc) focusing said radiation in a bundle on the sample during a period sufficient for removing the high definition nanostructure.2. The method according to claim 1 , wherein the radiation source is an electron gun of an electron microscope.3. The method according to claim 1 , wherein radiation is focused to an area of less than 2 nm.4. The method according to claim 1 , wherein an energy used for removing one atom in the layer is from 1*10J-1*10J.5. The method according to claim 1 , wherein sculpting per single point is performed during a period of 0.01-1000 mseconds.6. The method according to claim 1 , wherein after focusing:d) the radiation bundle is moved to a next position on the layer.7. The method according to claim 6 , wherein the bundle is moved from a first to a further position claim 6 , which movement is repeated from 1-10*10times.8. The method according to claim 1 , wherein further an image is formed of the layer.9. A free-standing layer comprising one or more nanostructures formed therein obtainable by a method according to claim 1 , wherein:the one or more nanostructures are defined with a precision of less than 1 nm,the ...

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Номер записи: 24
03-03-2016 дата публикации

SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF

Номер: US20160060097A1
Автор: DING JINGXIU, Zhang Xianming
Принадлежит:

A method for forming a semiconductor structure is provided. The method includes providing a substrate having a device region; and forming a sacrificial layer on a surface of the substrate in the device region. The method also includes forming a device layer having a plurality of openings exposing a portion of the surface of the sacrificial layer on the sacrificial layer; and removing the sacrificial layer to expose the surface of the substrate in the device region. Further, the method includes forming a cavity in the substrate in the device region by simultaneously etching the surface of the substrate in the device region exposed by the removed sacrificial layer and the plurality of openings using an anisotropic etching process. 1. A method for fabricating a semiconductor structure , comprising:providing a substrate having a device region;forming a sacrificial layer on a surface of the substrate in the device region;forming a device layer having a plurality of openings exposing a portion the sacrificial layer on the sacrificial layer;removing the sacrificial layer to expose the surface of the substrate in the device region; andforming a cavity in the substrate in the device region by simultaneously etching the surface of the substrate in the device region exposed by the removed sacrificial layer and the plurality of openings using an anisotropic etching process.2. The method according to claim 1 , wherein:the sacrificial layer is removed by an isotropic etching process.3. The method according to claim 1 , wherein:the sacrificial layer is made of a material different from that of the device layer; andthe sacrificial layer is made of a material different from that of the substrate.4. The method according to claim 3 , wherein:the sacrificial layer is made of amorphous silicon;a wet etching process is used to remove the sacrificial layer; andan etching solution of the wet etching process is a tetramethylammonium hydroxide (TMAOH) solution.5. The method according to ...

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Номер записи: 25
05-03-2015 дата публикации

VIBRATION DEVICE AND METHOD OF MANUFACTURING VIBRATION DEVICE

Номер: US20150061455A1
Автор: AHN Chang Geun, BAEK In Bok, Jang Won Ick, Kim Yark Yeon, KIM Young Jun, LEE Bong Kuk, LIM Ji Eun, YOON Yong Sun, Yu Han Young
Принадлежит:

A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region. 1. A vibration device , comprising:a lower substrate on which an insulating layer is formed;an upper substrate connected onto the insulating layer, and comprising a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance; anda supporting portion formed to cover both ends of the vibration region, to support the vibration region.2. The vibration device of claim 1 , wherein the supporting portion is formed of a material determined based on a material forming the upper substrate and a material forming the insulating layer.3. The vibration device of claim 1 , wherein when a material forming the supporting portion is identical to a material forming the upper substrate claim 1 , a protection material used to protect the upper substrate from etching is applied onto the upper substrate.4. The vibration device of claim 1 , wherein radiation fins are formed on the supporting portion claim 1 , and radiate heat generated in the upper substrate and the lower substrate.5. The vibration device of claim 1 , further comprising:additional electrodes formed above the vibration region and on the supporting portion, to output a signal to the vibration region.6. The vibration device of claim 1 , further comprising:a lower electrode formed on the top or the bottom of the lower substrate, to output a signal to the vibration region; andan upper electrode formed on the upper substrate, to ...

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Номер записи: 26
22-05-2014 дата публикации

Micro-electro-mechanical system based focusing device and manufacturing method thereof

Номер: US20140139937A1
Автор: Deming Tang, Fengqin Han, Jianhong Mao, Lei Zhang
Принадлежит: Lexvu Opto Microelectronics Technology Shanghai Co Ltd

A micro-electro-mechanical system based focusing device and manufacturing method thereof are disclosed. The system includes: a deformable lens, multiple groups of conductive deformable crossbeams and conductive structs; and one or more fixed parts. In each group, each conductive deformable crossbeam corresponds to a conductive struct. The conductive deformable crossbeams and the conductive structs are arranged around the deformable lens and spaced from each other. The conductive deformable crossbeams are suspended in the air, their inner edges are connected with an external edge of the deformable lens and their external edges are connected with the fixed parts. The conductive structs are fixedly connected with the fixed parts and remain stationary. Electrostatic force between the conductive deformable crossbeam and the conductive struct causes the deformable lens to be stretched and rotate, thus, surface curvature and focal length are changed. The device has a small size, low power consumption and low manufacturing cost.

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Номер записи: 27
10-03-2016 дата публикации

RELEASE CHEMICAL PROTECTION FOR INTEGRATED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) AND MICRO-ELECTRO-MECHANICAL (MEMS) DEVICES

Номер: US20160068388A1
Автор: Assaderaghi Fariborz, DANEMAN Michael J.
Принадлежит:

Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electro-mechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical. 1. A device , comprising:an integrated circuit substrate comprising a passivation opening having a sidewall that exposes a dielectric layer of the integrated circuit substrate;a first barrier layer deposited on the sidewall that prohibits exposure of the dielectric layer to a release chemical employable to release a micro-electro-mechanical (MEMS) device integrated with the integrated circuit substrate, wherein the first barrier layer comprises a metal; anda second barrier layer comprising an electrically insulating layer deposited on a portion the first barrier layer, wherein the second barrier layer is at least partially resistant to the release chemical.2. The device of claim 1 , wherein the passivation opening exposes a metal pad of the integrated circuit substrate.3. The device of claim 2 , wherein the passivation opening facilitates a bonding that bonds the integrated circuit substrate to the MEMS device via the metal pad claim 2 , wherein the bonding comprises at least one of an eutectic bonding claim 2 , metal compression bonding claim 2 , fusion bonding claim 2 , anodic bonding claim 2 , or copper-to-copper bonding.4. The device of claim 2 , wherein the passivation ...

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Номер записи: 28
09-03-2017 дата публикации

METHOD FOR MANUFACTURING A MICROMECHANICAL TIMEPIECE PART AND SAID MICROMECHANICAL TIMEPIECE PART

Номер: US20170068215A1
Автор: DUBOIS PHILIPPE
Принадлежит: NIVAROX-FAR S.A.

A method for manufacturing a micromechanical timepiece part starting from a silicon-based substrate, including, forming pores on the surface of at least one part of a surface of said silicon-based substrate of a determined depth, entirely filling the pores with a material chosen from diamond, diamond-like carbon, silicon oxide, silicon nitride, ceramics, polymers and mixtures thereof, in order to form, in the pores, a layer of the material of a thickness at least equal to the depth of the pores. A micromechanical timepiece part including a silicon-based substrate which has, on the surface of at least one part of a surface of the silicon-based substrate, pores of a determined depth, the pores being filled entirely with a layer of a material chosen from diamond, diamond-like carbon, silicon oxide, silicon nitride, ceramics, polymers and mixtures thereof, of a thickness at least equal to the depth of the pores. 1. A method for manufacturing a micromechanical timepiece part starting from a silicon-based substrate , comprising , in order , the steps of:a) forming pores on the surface of at least one part of a surface of said silicon-based substrate of a determined depth,b) entirely filling said pores with a material chosen from diamond, diamond-like carbon (DLC), silicon oxide, silicon nitride, ceramics, polymers and mixtures thereof, in order to form, in the pores, a layer of said material of a thickness at least equal to the depth of the pores.2. The method according to claim 1 , comprising claim 1 , after step b) claim 1 , a step c) of forming a surface layer of said material on the surface of the silicon-based substrate and of the pores filled with the material.3. The method according to claim 1 , wherein step a) is achieved by a method chosen from the group comprising a method by electrochemical etching claim 1 , a method of the Stain-etch type and a method of the MAC-Etch type.4. The method according to claim 3 , wherein step a) is achieved by a method of the MAC- ...

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Номер записи: 29
19-03-2015 дата публикации

Capacitive Acceleration Sensor with a Bending Elastic Beam and Preparation Method Thereof

Номер: US20150075283A1
Автор: Che Lufeng, Wang Yuelin, Zhou Xiaofeng
Принадлежит:

The present invention provides a capacitive acceleration sensor with a bending elastic beam and a preparation method. The sensor at least includes a first electrode structural layer, a middle structural layer and a second electrode structural layer; wherein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively; the middle structural layer includes: a frame formed on a SOI silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, wherein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space. Since the bending times, the total length and the total width of the bending elastic beam can be prepared as needed, capacitive acceleration sensors with different sensitivities can be manufactured according to the present invention, and the manufacturing has high flexibility. 1. A method for preparing a capacitive acceleration sensor with a bending elastic beam , at least including:1) performing etching at two surfaces of a SOI silicon substrate with a double device layer based on an anisotropic etching method, causing the two surfaces to be concave respectively;2) forming a plurality of anti-overloading bumps at recesses on the two surfaces based on photolithography and the anisotropic etching method, respectively;3) further forming damping grooves at the two surfaces of the structure on which the anti-overloading bumps have been formed based on photolithography and the anisotropic etching method, respectively;4) performing etching on the two surfaces of the structure on which the damping grooves have been formed, respectively, based on photolithography and dry etching, and ...

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Номер записи: 30
07-03-2019 дата публикации

HERMETICALLY SEALED MOLECULAR SPECTROSCOPY CELL

Номер: US20190071306A1
Автор: Cook Benjamin Stassen, FRUEHLING Adam Joseph, Herbsommer Juan Alejandro, Jacobs Simon Joshua
Принадлежит:

An illustrate method (and device) includes etching a cavity in a first substrate (e.g., a semiconductor wafer), forming a first metal layer on a first surface of the first substrate and in the cavity, and forming a second metal layer on a non-conductive structure (e.g., glass). The method also may include removing a portion of the second metal layer to form an iris to expose a portion of the non-conductive structure, forming a bond between the first metal layer and the second metal layer to thereby attach the non-conductive structure to the first substrate, sealing an interface between the non-conductive structure and the first substrate, and patterning an antenna on a surface of the non-conductive structure. 1. A method for forming a sealed cavity , comprising:etching a cavity in a first substrate;forming a first metal layer on a first surface of the first substrate and in the cavity;forming a second metal layer on a non-conductive structure;removing a portion of the second metal layer to form an iris to expose a portion of the non-conductive structure;forming a bond between the first metal layer and the second metal layer to thereby attach the non-conductive structure to the first substrate;sealing an interface between the non-conductive structure and the first substrate; andpatterning an antenna on a surface of the non-conductive structure.2. The method of claim 1 , further comprising depositing and patterning an electronic bandgap structure on the non-conductive structure.3. The method of claim 1 , wherein creating the cavity comprises wet etching the cavity.4. The method of claim 3 , wherein the wet etching uses at least one of potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH) as a wet etchant.5. The method of claim 1 , wherein forming a bond between the first and second metal layers comprises depositing a eutectic alloy on a surface of at least one of the first and second metal layers.6. The method of claim 1 , wherein forming the second metal ...

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Номер записи: 31
19-06-2014 дата публикации

Analyte sensor and fabrication methods

Номер: US20140166612A1
Автор: David Zhou, James R. Petisce, Mena Valiket
Принадлежит: Edwards Lifesciences Corp

Methods for fabricating analyte sensor components using IC- or MEMs-based fabrication techniques and sensors prepared therefrom. Fabrication of the analyte sensor component comprises providing an inorganic substrate having deposited thereon a release layer, a first flexible dielectric layer and a second flexible dielectric layer insulating there between electrodes, contact pads and traces connecting the electrodes and the contact pads of a plurality of sensors. Openings are provided in one of the dielectric layers over one or more of the electrodes to receive an analyte sensing membrane for the detection of an analyte of interest and for electrical connection with external electronics. The plurality of fabricated sensor components are lifted off the inorganic substrate.

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Номер записи: 32
21-03-2019 дата публикации

PATTERN FORMATION METHOD AND PATTERN FORMATION MATERIAL

Номер: US20190084829A1
Автор: ASAKAWA Koji, KIHARA Naoko, Lee Seekei, SASAO Norikatsu, Sawabe Tomoaki, Sugimura Shinobu
Принадлежит: Toshiba Memory Corporation

According to one embodiment, a pattern formation method is disclosed. The method can include a preparation process, a first layer formation process, a block copolymer layer formation process, and a contact process. The preparation process prepares a pattern formation material including a polymer including a first chemical structure including carbon, hydrogen, and a first group. The first group includes one of a vinyl group, a hydroxy group, or a first element. The first layer formation process forms a first layer on a base body. The first layer includes the pattern formation material. The block copolymer layer formation process forms a block copolymer layer on the first layer. The block copolymer layer includes a first polymer and a second polymer. The block copolymer layer formation process includes forming first and second regions. The contact process causes the block copolymer layer to contact a metal compound including a metallic element. 1. A pattern formation method , comprising:a preparation process of preparing a pattern formation material including a polymer including a first chemical structure, the first chemical structure including carbon, hydrogen, and a first group, the first group including at least one of a vinyl group, a hydroxy group, or a first element, the first element including at least one selected from the group consisting of fluorine, chlorine, and bromine, the pattern formation material not including a carbonyl group, or a concentration of carbonyl groups in the pattern formation material being 0.0005 mol/g or less;a first layer formation process of forming a first layer on a base body, the first layer including the pattern formation material;a block copolymer layer formation process of forming a block copolymer layer on the first layer, the block copolymer layer including a first polymer and a second polymer, the block copolymer layer formation process including forming a first region and a second region by causing phase separation of the ...

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Номер записи: 33
06-04-2017 дата публикации

MICROELECTRONIC INTERCONNECT ELEMENT WITH DECREASED CONDUCTOR SPACING

Номер: US20170096329A1
Автор: Endo Kimitaka, Haba Belgacem, KUBOTA Yoichi, Ryu Chang Myung
Принадлежит:

A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines. 1. A microelectronic interconnect element , comprising:a plurality of first metal lines each having a lower surface whose width and length extend within a reference plane, an upper surface remote from the reference plane, and edges extending between the upper and lower surfaces, a first distance between the upper and lower surfaces of such first metal line defining a thickness of such first metal line;a plurality of second metal lines interleaved with the plurality of first metal lines in a direction of the width of the plurality of first metal lines, each of the plurality of second metal lines having an upper surface whose width and length extend within the reference plane and a lower surface remote from the reference plane, a second distance between the upper and lower surfaces of such second metal line defining a thickness of such second metal line;a dielectric layer separating a metal line of the plurality of first metal lines from an adjacent metal line of the plurality of second metal lines; anda conductive pad extending in directions of the reference plane and a conductive via extending from the conductive pad through the dielectric layerwherein a pitch between the metal line of the plurality of first metal lines and the adjacent metal line of the plurality of second metal lines is smaller than a first pitch between adjacent ones of the plurality of first metal lines and is smaller than a second pitch between ...

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Номер записи: 34
26-03-2020 дата публикации

METHOD OF FABRICATING SEMICONDUCTOR STRUCUTRE

Номер: US20200098583A1
Автор: CHEN Jr-Sheng, Chiang Yu-Pei, Hsu Chih-Hsien, Huang Lin-Ching, Li An-Chi, Meng Chin-Han
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd.

A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio. 1. A method , comprising: performing first cycles followed by second cycles, each cycle among the first and second cycles respectively comprising a passivating step followed by an etching step,', 'during the first cycles, a first duration ratio of the etching step to the passivating step ramps up step by step,', 'during the second cycles, a second duration ratio of the etching step to the passivating step is constant., 'anisotropically etching a semiconductor substrate comprising2. The method according to claim 1 , wherein the first duration ratio non-linearly ramps up step by step claim 1 , and the second duration ratio is greater than the first duration ratio.31111. The method according to claim 1 , wherein the first duration ratio ramps up step by step from X to Y claim 1 , X is less than 1 claim 1 , and Y is greater than 1 and less than the second duration ratio.4. The method according to claim 1 , wherein anisotropically etching the semiconductor substrate further comprises performing third cycles after ...

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Номер записи: 35
29-04-2021 дата публикации

MEMS Microphone and Method of Manufacture

Номер: US20210122626A1
Автор: Rasmussen Kurt, Ravnkilde Jan Tue
Принадлежит:

In an embodiment a MEMS microphone includes a substrate, a shield layer, a central insulation layer and a membrane, wherein the substrate has an upper surface with a first opening therein, wherein the shield layer is arranged between the upper surface of the substrate and the membrane, the shield layer having a second opening, wherein the central insulation layer is arranged between the shield layer and the membrane, the shield layer comprising a dielectric bulk material having a third opening and an etch stopper forming an edge of the central insulation layer towards the third opening such that the dielectric bulk material of the central insulation layer is completely enclosed between the shield layer, the etch stopper and the membrane, and wherein all openings are arranged one above another to form a common sound channel to the membrane. 1. A MEMS microphone comprising:a substrate;a shield layer;a central insulation layer; anda membrane,wherein the substrate has an upper surface with a first opening therein,wherein the shield layer is arranged between the upper surface of the substrate and the membrane, the shield layer having a second opening, a dielectric bulk material having a third opening, and', 'an etch stopper forming an edge of the central insulation layer towards the third opening such that the dielectric bulk material of the central insulation layer is completely enclosed between the shield layer, the etch stopper and the membrane, and, 'wherein the central insulation layer is arranged between the shield layer and the membrane, the shield layer comprisingwherein all openings are arranged one above another to form a common sound channel to the membrane.2. The MEMS microphone according to claim 1 ,wherein a lower insulation layer is arranged between the upper surface of the substrate and the shield layer, andwherein a material of the lower insulation layer is silicon oxide.3. The MEMS microphone according to claim 1 , wherein the etch stopper forms a lower ...

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Номер записи: 36
21-04-2016 дата публикации

Mems microphone structure and method of manufacturing the same

Номер: US20160112807A1
Автор: Chao Yuan, Qingyn Zuo, Xiaoxu KANG
Принадлежит: Shanghai IC R&D Center Co Ltd

A MEMS microphone structure, comprising a semiconductor substrate having a cavity, a first dielectric layer having a through-hole communicating with the cavity, a lower diaphragm electrode formed above the through-hole and at least partially attached to the upper surface of the first dielectric layer, and an upper electrode structure with an insulating layer. The upper electrode structure comprises an annular supporter, a back plate having multiple holes, and an upper electrode connection. At least a part of the annular supporter extends downwardly to the lower diaphragm electrode while the rest of the annular supporter extends downwardly to the substrate. The back plate is suspended above the lower diaphragm electrode by the annular supporter, forming an air gap therebetween. An upper electrode is embedded in the insulating layer at the back plate and is lead out by the upper electrode connection.

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Номер записи: 37
25-08-2022 дата публикации

METHOD FOR PREPARING MICRO-CAVITY ARRAY SURFACE WITH INCLINED SMOOTH BOTTOM SURFACE BASED ON AIR MOLDING METHOD

Номер: US20220267144A1
Автор: FU Rao, Li Jian, Liu Gang, Luo Jie, WANG Lamei, ZENG Fanlin
Принадлежит: Jiangsu University

The present invention provides a method for preparing a micro-cavity array surface with an inclined smooth bottom surface based on an air molding method. The method includes: preparing a micro-cavity array surface; preparing an auxiliary microstructure polymer template, and performing plasma treatment on the auxiliary microstructure polymer template; uniformly spreading a layer of a liquid polymer film to be formed on the auxiliary microstructure polymer template subjected to the plasma treatment; placing a gap bead in an empty position on the micro-cavity array surface; placing the auxiliary microstructure polymer template spread with the liquid polymer film on the gap bead on the micro-cavity array surface, maintaining this state, and feeding the auxiliary microstructure polymer template into a vacuum drying oven; and heating and solidifying the liquid polymer film, and separating the micro-cavity array surface to obtain the micro-cavity array surface with the inclined smooth bottom surface. 1. An air molding method based on pre-spreading of an auxiliary microstructure template for preparing a micro-cavity array surface with an inclined smooth bottom surface , comprising the following steps:step 1, preparing a micro-cavity array surface, and preparing an auxiliary microstructure polymer template, and performing a plasma treatment on the auxiliary microstructure polymer template;step 2, uniformly spreading a layer of a liquid polymer film to be formed on the auxiliary microstructure polymer template subjected to the plasma treatment, and placing a gap bead in an empty position on the micro-cavity array surface;step 3, placing the auxiliary microstructure polymer template spread with the liquid polymer film on the gap bead on the micro-cavity array surface, maintaining this state, and feeding the auxiliary microstructure polymer template into a vacuum drying oven; andstep 4, setting a pressure in the vacuum drying oven according to a designed pressure, heating and ...

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Номер записи: 38
16-04-2020 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20200115227A1
Автор: Hirose Yoshiro, Ohashi Naofumi
Принадлежит: KOKUSAI ELECTRIC CORPORATION

Described herein is a technique capable of forming a sacrificial film with a high wet etching rate to obtain a wet etching selectivity with respect to a movable electrode when manufacturing a cantilever structure sensor using MEMS (Micro-Electro-Mechanical Systems) technology. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) loading a substrate including a control electrode, a pedestal and a counter electrode formed thereon into a process chamber; and (b) forming a sacrificial film containing impurities on the control electrode, the pedestal and the counter electrode by supplying a first process gas in a non-plasma state containing the impurities and silicon to the process chamber through a first gas supply pipe together with supplying a second process gas in a plasma state containing oxygen to the process chamber through a second gas supply pipe. 1. A method of manufacturing a semiconductor device comprising:(a) loading a substrate comprising a control electrode, a pedestal and a counter electrode formed thereon into a process chamber; and(b) forming a sacrificial film containing impurities on the control electrode, the pedestal and the counter electrode by supplying a first process gas in a non-plasma state containing the impurities and silicon to the process chamber through a first gas supply pipe together with supplying a second process gas in a plasma state containing oxygen to the process chamber through a second gas supply pipe.2. The method of claim 1 , wherein the impurities comprise carbon or boron.3. The method of claim 2 , wherein a dilution gas supply pipe configured to supply a dilution gas is connected to the second gas supply pipe claim 2 , and a supply amount of the dilution gas is adjusted in (b).4. The method of claim 3 , wherein the dilution gas comprises argon gas.5. The method of claim 4 , further comprising:(c) modifying the sacrificial film by ...

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Номер записи: 39
23-04-2020 дата публикации

METHOD FOR PRODUCING HOLLOW STRUCTURE AND HOLLOW STRUCTURE

Номер: US20200123005A1
Автор: Akiyama Takahiro, MARUYAMA Ayako, Setomoto Yutaka, Sumida Takayuki
Принадлежит:

A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region. 1. A method for producing a hollow structure including a first film and a second film disposed so as to face the first film with a hollow portion formed therebetween , the method comprising:a step of forming a sacrificial layer on a first film;a step of forming a second film on the sacrificial layer;a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer; anda step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening,wherein at least one of the first film and the second film in which the etching opening is formed includes a silicon nitride film, andin the silicon nitride film, a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.2. The method for producing a hollow structure according to claim 1 , wherein the fluorine-containing gas contains at least one selected from the group consisting of xenon difluoride claim 1 , bromine trifluoride claim 1 , chlorine trifluoride claim 1 , and a fluorine-containing interhalogen compound.3. The method for ...

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Номер записи: 40
21-05-2015 дата публикации

METHOD FOR MANUFACTURING A STRUCTURED SURFACE

Номер: US20150140717A1
Автор: Urban Andrea
Принадлежит:

A method is described for manufacturing a micromechanical structure, in which a structured surface is created in a substrate by an etching method in a first method step, and residues are at least partially removed from the structured surface in a second method step. In the second method step, an ambient pressure for the substrate which is lower than 60 Pa is set and a substrate temperature which is higher than 150° C. is set. 1. A method for manufacturing a micromechanical structure , comprising:creating a structured surface in a substrate by an etching method; andat least partially removing residues from the structured surface;during the removing step, setting an ambient pressure for the substrate that is lower than 60 Pa and setting a substrate temperature that is higher than 150° C.2. The method as recited in claim 1 , wherein in the removing step at least one of:the ambient pressure is lower than 3 Pa, andthe substrate temperature is higher than 175° C.3. The method as recited in claim 1 , wherein the ambient pressure is lower than 2 Pa.4. The method as recited in claim 1 , wherein the ambient pressure is between 0.6 Pa and 1.3 Pa.5. The method as recited in claim 1 , wherein the substrate temperature is higher than 190° C.6. The method as recited in claim 1 , wherein the substrate temperature is between 200° C. and 400° C.7. The method as recited in claim 1 , wherein a plasma is used at least partially to remove the residues claim 1 , the plasma at least partially containing O claim 1 , H claim 1 , N claim 1 , forming gas or ammonia.8. The method as recited in claim 1 , wherein O claim 1 , H claim 1 , N claim 1 , forming gas or ammonia is supplied during the removing step.9. The method as recited in claim 1 , wherein the substrate includes a sacrificial layer that is removed at least partially during the removing step.10. The method as recited in claim 1 , wherein the substrate includes at least partially one of silicon claim 1 , an oxide claim 1 , a metal ...

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Номер записи: 41
14-08-2014 дата публикации

ACOUSTIC SENSOR AND METHOD FOR MANUFACTURING SAME

Номер: US20140225204A1
Автор: Hamaguchi Tsuyoshi, Iida Nobuyuki, Ishimoto Koichi, KANO Hajime, NAKAGAWA Yusuke, TATARA Yoshitaka
Принадлежит: Omron Corporation

A cavity is provided in a substrate so as to penetrate from a front surface to a back surface of the substrate. A thin-film diaphragm for sensing acoustic vibrations above the substrate is provided over the cavity. At least one wall surface of the cavity is configured of a first inclined surface between the front surface of the substrate and a middle portion in the thickness direction, the first inclined surface gradually widening toward the outside of the substrate as the first inclined surface goes from the front surface of the substrate toward the middle portion, and a second inclined surface between the middle portion and the back surface of the substrate, the second inclined surface gradually narrowing toward the inside of the substrate as the second inclined surface goes from the middle portion toward the back surface of the substrate. 1. An acoustic sensor comprising:a substrate having a cavity penetrating from a front surface to a back surface;a thin-film diaphragm arranged adjacent to the front surface of the substrate to cover the cavity; anda conversion unit configured to convert acoustic vibrations into an electrical signal on the basis of displacement of the diaphragm, whereinthe cavity has a plurality of wall surfaces,at least one wall surface of the plurality of wall surfaces is configured of a first inclined surface and a second inclined surface, wherein:the first inclined surface is between the front surface of the substrate and a middle portion in a thickness direction of the substrate, and gradually widening toward the outside of the substrate as the first inclined surface goes from the front surface of the substrate toward the middle portion, andthe second inclined surface is between the middle portion and the back surface of the substrate, and narrowing toward the inside of the substrate as the second inclined surface goes from the middle portion to the back surface of the substrate, and whereinin a cross section perpendicular to the wall ...

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Номер записи: 42
04-06-2015 дата публикации

METHOD FOR MANUFACTURING A MICROMECHANICAL COMPONENT

Номер: US20150151962A1
Автор: Frey Jens, Mayer Thomas, Weber Heribert Mathias
Принадлежит:

A method for manufacturing a micromechanical component includes the following sequential steps: a first material layer including a first joining partner being applied to a first wafer; a second material layer including a second joining partner being applied to a second wafer; a micromechanical structure being created in the first wafer by gas phase etching with the aid of a gaseous etching medium which is applied to the first joining partner; the first and second wafers being joined in such a way that they are in contact at least in some areas; and the first and second joining partners being heated to be integrally joined to form a connecting layer, a eutectic joining material being formed in the connecting layer from the first joining partner and the second joining partner. 1. A method for manufacturing a micromechanical component , comprising:in a first manufacturing step, applying a first material layer including a first joining partner to a first wafer;in a second manufacturing step, applying a second material layer including a second joining partner to a second wafer;in a third manufacturing step, producing a micromechanical structure in the first wafer by gas phase etching with the aid of a gaseous etching medium, wherein the gaseous etching medium is applied to the first joining partner during the gas phase etching;in a fourth manufacturing step, joining the first and second wafers in such a way that the first joining partner and the second joining partner are in contact at least in some areas; andin a fifth manufacturing step, heating the first and second joining partners to integrally join the first and second joining partners to form a connecting layer, a eutectic joining material being formed in the connecting layer from the first joining partner and the second joining partner.2. The method as recited in claim 1 , wherein in the third manufacturing step claim 1 , the micromechanical structure is exposed by gas phase etching with the aid of the gaseous ...

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Номер записи: 43
04-06-2015 дата публикации

WAVELENGTH TUNABLE MEMS-FABRY PEROT FILTER

Номер: US20150153563A1
Автор: Eu David, Kamal Mohammad, Li Tongning, Qi Qinian
Принадлежит:

A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm. 1. A tunable MEMS-FP filter comprising:a semiconductor or dielectric substrate having an upper and a lower face;a fixed reflector attached to the lower face of the substrate,a bottom electrode disposed on the upper face of the substrate, and an AR layer disposed on the upper face of the substrate;a moveable reflector having an upper and a lower face, supported by one or more suspension beams, and comprising a MEMS and multilayer dielectric DBR mirrors and a top electrode disposed on the upper face of the moveable reflector, wherein an air gap is formed between the lower face of the moveable reflector and the upper face of the substrate;wherein an optical cavity is formed between the fixed reflector and the moveable reflector; anda voltage source to supply voltage between the top electrode and the bottom electrode to change the cavity length of the optical cavity.2. The tunable MEMS-FP filter of claim 1 , wherein the multilayer DBR mirrors are comprised of: Si/SiO claim 1 , Si/AlO claim 1 , SiO/TiOor TaO/SiO.3. The tunable MEMS-FP ...

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Номер записи: 44
07-05-2020 дата публикации

REDUCED MEMS CAVITY GAP

Номер: US20200140263A1
Автор: Flader Ian, KANG Dongyang
Принадлежит:

Provided herein is a method including forming a MEMS cap. A cavity is formed in the MEMS cap wafer, and a bond material is deposited on the MEMS cap wafer, wherein the bond material lines the cavity after the depositing. The MEMS cap wafer is bonded to a MEMS device wafer, wherein the bond material forms a bond between the MEMS cap wafer and the MEMS device wafer. A MEMS device is formed in the MEMS device wafer. The bond material is removed from the cavity. 1. A method comprising:forming a micro-electro-mechanical system (“MEMS”) cap wafer;forming a cavity in the MEMS cap wafer;depositing a bond material on the MEMS cap wafer, wherein the bond material lines the cavity after the depositing;bonding the MEMS cap wafer to a MEMS device wafer, wherein the bond material forms a bond between the MEMS cap wafer and the MEMS device wafer;forming a MEMS device in the MEMS device wafer; andremoving the bond material from the cavity.2. The method of claim 1 , wherein the bond material is removed through the MEMS device claim 1 , and wherein further the MEMS cap wafer remains bonded to the MEMS device wafer after the removing.3. The method of claim 1 , further comprising selective etching the bond material.4. The method of claim 3 , wherein the selective etching includes introducing any one of vapor HF (“hydrofluoric acid”) claim 3 , liquid HF claim 3 , BOE (“buffered oxide etchant) claim 3 , or ME (“reactive ion etch) into the cavity through the MEMS device.5. The method of claim 1 , wherein the removing includes removing with vapor HF claim 1 , liquid HF claim 1 , BOE claim 1 , or RIE.6. The method of claim 1 , wherein a MEMS wafer includes the MEMS cap wafer and the MEMS device wafer claim 1 , and further comprising eutecticly bonding the MEMS wafer to a CMOS wafer.7. The method of claim 1 , wherein the bond material includes an oxide.8. The method of claim 1 , wherein the removing is after the bonding.9. The method of claim 1 , wherein the MEMS device is a gyroscope claim ...

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Номер записи: 45
07-05-2020 дата публикации

FENCE STRUCTURE TO PREVENT STICTION IN A MEMS MOTION SENSOR

Номер: US20200140265A1
Автор: Tseng Lee-Chuan, Wu Chang-Ming
Принадлежит:

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface. 1. A method of fabricating an integrated chip structure , comprising:forming a plurality of metal layers within a dielectric structure over a substrate;forming an upper metal layer over the dielectric structure;forming a masking layer over the upper metal layer;selectively etching the upper metal layer to remove metal exposed by the masking layer and to redeposit the removed metal onto sidewalls of the masking layer to define an anti-stiction plate; andbonding a microelectromechanical system (MEMS) substrate to the dielectric structure, wherein the MEMS substrate comprises a movable mass.2. The method of claim 1 , wherein the anti-stiction plate comprises a same metal as one or more of the plurality of metal layers.3. The method of claim 1 , wherein the upper metal layer is selectively etched by bombarding the upper metal layer with high energy particles or gas ions.4. The method of claim 1 , further comprising:forming bond pads along an uppermost surface of the dielectric structure; andforming the masking layer to completely cover the bond pads while selective etching the upper metal layer.5. The method of claim 1 , wherein selectively etching the upper metal layer ...

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Номер записи: 46
25-05-2017 дата публикации

MEMS Microphone Having Improved Sensitivity and Method for the Production Thereof

Номер: US20170150277A1
Автор: Pirmin Hermann Otto Rombach
Принадлежит: EPCOS AG

A MEMS microphone with improved sensitivity and a method for producing such a MEMS microphone are disclosed. In an embodiment the MEMS microphone includes a carrier substrate, a capacitor having two electrodes, a substrate-side anchor and an electrode anchor, wherein the substrate-side anchor connects the substrate to the capacitor, wherein the electrode anchor connects the two electrodes of the capacitor, wherein one of the electrodes is a backplate and the other electrode is the anchored membrane, and wherein the substrate-side anchor has a bearing area on the substrate which exceeds a minimum area necessary for a mechanical stability of the MEMS microphone by not more than the minimum area.

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Номер записи: 47
16-05-2019 дата публикации

Method of fabricating semiconductor strucutre

Номер: US20190148161A1
Автор: An-Chi Li, Chih-Hsien Hsu, Chin-Han Meng, Jr-Sheng Chen, Lin-Ching Huang, Yu-Pei Chiang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.

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Номер записи: 48
28-08-2014 дата публикации

PLASMA PROCESSING WITH PREIONIZED AND PREDISSOCIATED TUNING GASES AND ASSOCIATED SYSTEMS AND METHODS

Номер: US20140238955A1
Автор: Kiehlbauch Mark
Принадлежит: MICRON TECHNOLOGY, INC.

Plasma processing systems and methods for using pre-dissociated and/or pre-ionized tuning gases are disclosed herein. In one embodiment, a plasma processing system includes a reaction chamber, a support element in the reaction chamber, and one or more cathode discharge assemblies in the reaction chamber. The reaction chamber is configured to produce a plasma in an interior volume of the chamber. The support element positions a microelectronic workpiece in the reaction chamber, and the cathode discharge assembly supplies an at least partially dissociated and/or ionized tuning gas to the workpiece in the chamber. 1. A plasma processing method , comprising:supplying a process gas to a reaction chamber and flowing the process gas through a gas distributor in a first direction toward a surface of a workpiece;forming a plasma zone in the chamber using the process gas;flowing a tuning gas through a cathode discharge assemblyforming an electric field at least partially between a cathode and an anode of the cathode discharge assembly, wherein the electric field at least partially dissociates and/or ionizes the tuning gas; andafter flowing the tuning gas through the electric field, supplying the at least partially dissociated or ionized tuning gas to the plasma zone in the chamber proximate to a peripheral edge of the workpiece, wherein the tuning gas flows through an outlet of the cathode discharge assembly in a second direction different than the first direction of the process gas.2. The method of wherein the plasma zone is adjacent to a surface of the workpiece in the reaction chamber.3. The method of wherein supplying the tuning gas to the plasma zone includes flowing a stream of dissociated and/or ionized chemical species into the plasma zone in the second direction that is generally perpendicular to the surface of the workpiece.4. The method of wherein supplying the tuning gas to the plasma zone includes flowing a stream of reactive chemical species through an annular ...

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Номер записи: 49
07-06-2018 дата публикации

Electrical and optical via connections on a same chip

Номер: US20180158967A1
Автор: Chengwen Pei, Geng Wang, Joseph Ervin, Juntao Li, Kangguo Cheng
Принадлежит: Globalfoundries Inc

The present disclosure relates to semiconductor structures and, more particularly, to electrical and optical via connections on a same chip and methods of manufacture. The structure includes an optical through substrate via (TSV) comprising an optical material filling the TSV. The structure further includes an electrical TSV which includes a liner of the optical material and a conductive material filling remaining portions of the electrical TSV.

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Номер записи: 50
04-09-2014 дата публикации

SEMI-AQUEOUS POLYMER REMOVAL COMPOSITIONS WITH ENHANCED COMPATIBILITY TO COPPER, TUNGSTEN, AND POROUS LOW-K DIELECTRICS

Номер: US20140248781A1
Автор: Gemmill William R., Westwood Glenn
Принадлежит: Avantor Performance Materials, Inc.

A composition is provided that is effective for removing post etch treatment (PET) polymeric films and photoresist from semiconductor substrates. The composition exhibits excellent polymer film removal capability while maintaining compatibility with copper and low-κ dielectrics and contains water, ethylene glycol, a glycol ether solvent, morpholinopropylamine and a corrosion inhibiting compound and optionally one or more metal ion chelating agent, one or more other polar organic solvent, one or more tertiary amine, one or more aluminum corrosion inhibition agent, and one or more surfactant. 2. A removal composition according to wherein the composition contain 5-methylbenzotriazole and 3-morpholinopropylamine and ethylene glycol butyl ether.3. A removal composition of wherein the composition contains a tertiary amine and the tertiary amine is triethanolamine.4. A removal composition of wherein the composition contains a tertiary amine and the tertiary amine is triethanolamine.5. A removal composition of wherein the composition contains a metal ion chelating agent and the metal ion chelating agent is trans-1 claim 3 ,2-cyclohexanediamine tetraacetic acid.6. A removal composition of wherein the composition contains a metal ion chelating agent and the metal ion chelating agent is trans-1 claim 4 ,2-cyclohexanediamine tetraacetic acid.7. A removal composition of wherein the composition contains another polar organic solvent and the other polar organic solvent is N-methyl pyrrolidone.8. A removal composition of wherein the composition contains another polar organic solvent and the other polar organic solvent is N-methyl pyrrolidone.9. A removal composition of wherein the composition contains catechol or an alkyl catechol.10. A removal composition according to wherein the composition contains 4-t-butylcatechol.11. A removal composition of comprising about 20.9% water claim 1 , about 20% N-methyl pyrrolidone claim 1 , about 46.5% ethylene glycol butyl ether claim 1 , about ...

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Номер записи: 51
15-06-2017 дата публикации

MEMS ANTI-PHASE VIBRATORY GYROSCOPE

Номер: US20170167878A1
Автор: Sun Chen, Yu Lian Zhong
Принадлежит:

A MEMS anti-phase vibratory gyroscope includes two measurement masses with a top cap and a bottom cap each coupled with a respective measurement mass. The measurement masses are oppositely coupled with each other in the vertical direction. Each measurement mass includes an outer frame, an inner frame located within the outer frame, and a mass located within the inner frame. The two measurement masses are coupled with each other through the outer frame. The inner frame is coupled with the outer frame by a plurality of first elastic beams. The mass is coupled with the inner frame by a plurality of second elastic beams. A comb coupling structure is provided along opposite sides of the outer frame and the inner frame. The two masses vibrate toward the opposite direction, and the comb coupling structure measures the angular velocity of rotation. 1. A fabrication technique for a gyroscope , the gyroscope having two measurement structures , a top cap and a bottom cap each coupled with a respective one of the measurement structures , each measurement structure including an outer frame , an inner frame located within the outer frame , and a mass located within the inner frame , wherein the two measurement structures are coupled with each other in the vertical direction through the outer frame , the inner frame is coupled with the outer frame by a plurality of first elastic beams , the mass is coupled with the inner frame by a plurality of second elastic beams , and a comb structure is provided along opposite sides of the outer frame and the inner frame , comprising the following steps:(i) growing an epilayer on the surface of a top silicon layer of a silicon on insulator silicon wafer;(ii) forming, by use of thermal oxidation or chemical deposition, a silicon dioxide layer on the surface of the epilayer;(iii) forming, by use of photolithography and etching, a plurality of holes with depth to the epilayer at outer and inner portions of the surface of the silicon dioxide layer ...

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Номер записи: 52
25-06-2015 дата публикации

METHOD FOR FABRICATING MULTI-TRENCH STRUCTURE

Номер: US20150175409A1
Автор: Dai Dan, XIA Changfeng, Zhang Xinwei, ZHOU Guoping
Принадлежит: CSMC TECHNOLOGIES FAB1 CO., LTD.

Provided is a method for fabricating a multi-trench structure, including steps of: performing anisotropic etching on a semiconductor substrate so as to form a vertical trench; growing a first epitaxial layer on the semiconductor substrate in which the vertical trench has been formed, so that the first epitaxial layer covers the top of the vertical trench to form a closed structure; performing anisotropic and isotropic etching on the closed structure, so as to form a trench array, and to make the trench array communicate with the vertical trench, the trench array including a number of trenches or vias, upper portions of a number of trenches or vias being separated from each other, and lower portions thereof communicating with each other to form a cavity; and growing a second epitaxial layer to cover the trench array, so as to form a closed multi-trench structure. With two times of growth of the epitaxial layers, the multi-trench structure remains stable and solid in a fabricating process, which prevents phenomena of film breakage or falling off in the fabricating process. 1. A method for fabricating a multi-trench structure , comprising the following steps:Step 1: performing anisotropic etching on a semiconductor substrate so as to form a vertical trench;Step 2: growing a first epitaxial layer on the semiconductor substrate in which the vertical trench has been formed, so that the first epitaxial layer covers the top of the vertical trench to form a closed structure;Step 3: performing anisotropic and isotropic etching on the closed structure, so as to form a trench array, and to make the trench array communicate with the vertical trench; the trench array comprising a plurality of trenches or vias, upper portions of the plurality of trenches or vias being separated from each other and lower portions thereof communicating with each other to form a cavity; andStep 4: growing a second epitaxial layer to cover the trench array, so as to form a closed multi-trench ...

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Номер записи: 53
01-07-2021 дата публикации

ENHANCED CONTROL OF SHUTTLE MASS MOTION IN MEMS DEVICES

Номер: US20210198096A1
Автор: Borca-Tasciuc Diana-Andra, Hella Mona Mostafa, Oxaal John
Принадлежит: RENSSELAER POLYTECHNIC INSTITUTE

A MEMS device and a method of forming the same. A disclosed method includes: providing a silicon substrate layer, a buried oxide layer and a device silicon layer; using a microfabrication process to pattern a set of device features on the device silicon layer including a shuttle mass and an anchor frame; removing the silicon substrate layer and buried oxide below the shuttle mass; placing a shadow mask on a surface of the device silicon layer, wherein the shadow mask has a microscale opening to expose at least one device feature; and forming a nanoscale stopper on a sidewall of the at least one device feature by depositing a deposition material through the opening in a controlled manner. 1. A microelectronic mechanical system (“MEMS”) device , comprising:a movable feature that moves relative to a fixed feature;a nanoscale stopper that engages and prevents the movable feature from touching the fixed feature as the movable feature moves toward the fixed feature, wherein the nanoscale stopper has a thickness of less than 1000 nanometers; anda soft stopper that engages the movable feature before the movable feature engages the nanoscale stopper, wherein the soft stopper slows the movable feature relative to the fixed feature.2. The MEMS device of claim 1 , wherein:the movable feature comprises a plurality of movable electrodes extending from a shuttle mass; andthe fixed feature comprises a plurality of fixed electrodes interdigitated with the plurality of movable electrodes.3. The MEMS device of claim 2 , wherein the nanoscale stopper is positioned on sidewalls of the shuttle mass and an adjacent anchor frame.4. The MEMS device of claim 2 , wherein the nanoscale stopper is positioned on sidewalls of the plurality of movable electrodes and plurality of fixed electrodes.5. The MEMS device of claim 1 , wherein the soft stopper comprises at least one cantilever beam positioned on an anchor frame.6. The MEMS device of claim 5 , wherein the at least one cantilever beam ...

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Номер записи: 54
23-06-2016 дата публикации

REDUCING MEMS STICTION BY INCREASING SURFACE ROUGHNESS

Номер: US20160176707A1
Автор: Montez Ruben B., Steimle Robert F.
Принадлежит:

A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces, such as a travel stop and travel stop region, that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of the travel stop region. This is achieved by depositing a polysilicon layer over a dielectric layer using gaseous hydrochloric acid as one of the reactants. A subsequent etch back is performed to further increase the roughness. The deposition of polysilicon and subsequent etch back may be repeated one or more times in order to obtain the desired roughness. A final polysilicon layer may then be deposited to achieve a desired thickness. This final polysilicon layer is patterned to form the travel stop regions. The rougher surface decreases the surface area available for contact and, in turn, decreases the area through which stiction can be imparted. 1. A method for manufacturing a microelectromechanical systems (MEMS) device , the method comprising:forming an insulating layer over a substrate;depositing a first polysilicon layer on the insulating layer by reacting a silicon-containing gas, gaseous hydrochloric acid, and hydrogen for a first duration of time at a first temperature, wherein, during the deposition, the gaseous hydrochloric acid is at least 15% of a total flow of the gaseous hydrochloric acid and the silicon-containing gas;etching the first polysilicon layer using gaseous hydrochloric acid and hydrogen for a second duration of time at a second temperature;depositing a second polysilicon layer over the etched first polysilicon layer by reacting the silicon-containing gas and hydrogen for a third duration of time at a third temperature; andpatterning the second polysilicon layer and the first polysilicon layer to form a travel stop region of the MEMS device.2. The method of claim 1 , further comprising:forming a sacrificial layer over the travel stop region; andforming a third polysilicon ...

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Номер записи: 55
18-09-2014 дата публикации

Mems device structure with a capping structure

Номер: US20140264475A1
Автор: Chun-Chieh Lin, Hung-Wen Su, Minghsing Tsai, Rueijer Lin
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.

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Номер записи: 56
02-07-2015 дата публикации

STRESS-CONTROLLED FORMATION OF TiN HARD MASK

Номер: US20150187579A1
Автор: Chun-Chieh Lin, Hung-Wen Su, Ming-Hsing Tsai, Rueijer Lin
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A method to form a titanium nitride (TiN) hard mask in the Damascene process of forming interconnects during the fabrication of a semiconductor device, while the type and magnitude of stress carried by the TiN hard mask is controlled. The TiN hard mask is formed in a multi-layered structure where each sub-layer is formed successively by repeating a cycle of processes comprising TiN and chlorine PECVD deposition, and N 2 /H 2 plasma gas treatment. During its formation, the stress to be carried by the TiN hard mask is controlled by controlling the number of TiN sub-layers and the plasma gas treatment duration such that the stress may counter-balance predetermined external stress anticipated on a conventionally made TiN hard mask, which causes trench sidewall distortion, trench opening shrinkage, and gap filling problem.

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Номер записи: 57
30-06-2016 дата публикации

AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY

Номер: US20160185595A1
Автор: Chen Li-Min, COOPER Enamuel I., Lippy Steven, WHITE Daniela
Принадлежит:

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials. 1. A composition for selectively removing titanium nitride and/or photoresist etch residue material from the surface of a microelectronic device having same thereon , said composition comprising at least one oxidizing agent , at least one etchant , at least one corrosion inhibitor , at least one passivating agent , at least one solvent , and optionally at least one complexing agent , wherein the composition is substantially devoid of hydrogen peroxide.2. The composition of claim 1 , wherein the etchant comprises a species selected from the group consisting of HZrF claim 1 , HTiF claim 1 , HPF claim 1 , HF claim 1 , ammonium fluoride claim 1 , tetrafluoroboric acid claim 1 , hexafluorosilicic acid claim 1 , tetrabutylammonium tetrafluoroborate (TBA-BF) claim 1 , ammonium hexafluorosilicate claim 1 , ammonium hexafluorotitanate claim 1 , tetraalkylammonium fluoride (NRRRRF) claim 1 , tetraalkylammonium hydroxide (NRRRROH) claim 1 , weak bases claim 1 , and combinations thereof claim 1 , where R claim 1 , R claim 1 , R claim 1 , Rmay be the same as or different from one another and is selected from the group consisting of straight-chained C-Calkyl groups claim 1 , branched C-Calkyl groups claim 1 , substituted aryl groups claim 1 , unsubstituted aryl groups.3. The composition of claim 1 , wherein the etchant comprises HF claim 1 , hexafluorosilicic acid or tetrafluoroboric acid.4. The composition of claim 1 , wherein the oxidizing agent comprises a species selected from the group consisting of FeCl(both hydrated and unhydrated) ...

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Номер записи: 58
28-06-2018 дата публикации

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES

Номер: US20180179052A1
Автор: Brigham Michael T., JAHNES Christopher V., LUCE Cameron E., MALING Jeffrey C., Murphy William J., Stamper Anthony K., White Eric J.
Принадлежит:

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam. 1. A method comprising: forming a sacrificial material, which is comprised of both tungsten material and semiconductor material, on a substrate;', 'forming the MEMS beam structure above the tungsten material and the semiconductor material;', 'forming both the tungsten material and the semiconductor material above the MEMS beam structure;', 'forming a lid over the tungsten material formed above the MEMS beam structure;', 'etching the semiconductor material formed above the MEMS beam structure while etching the tungsten material formed above the MEMS beam structure to form an upper cavity structure above the MEMS beam structure and below the lid; and', 'etching both the tungsten material and the semiconductor material below the MEMS beam structure to form a lower cavity structure above the substrate and below the MEMS beam structure,, 'forming a Micro-Electro-Mechanical System (MEMS) beam structure comprising{'sub': '2', 'wherein the etching comprises performing an XeFetching process.'}2. The method of claim 1 , wherein the etching and film thicknesses are controlled to ensure that all or substantially all of the tungsten material is removed above the MEMS beam structure claim 1 , prior to the semiconductor material above the MEMS beam structure.3. The method of claim 1 , wherein the semiconductor material is one of silicon material and germanium material.4. The method of claim 3 , wherein the semiconductor material is silicon material claim 3 , and wherein the tungsten material and silicon material below the MEMS beam structure comprises forming the tungsten material on the substrate and forming the ...

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Номер записи: 59
09-07-2015 дата публикации

METHOD FOR THE PREVENTION OF SUSPENDED SILICON STRUCTURE ETCHING DURING REACTIVE ION ETCHING

Номер: US20150191350A1
Автор: Chang Kuei-Sung, Wu Ting-Hau
Принадлежит:

The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during over etching periods of DRIE processes. 1. A method of forming a device , comprising:receiving a semiconductor substrate;forming a protective region on the substrate;forming a spacer layer over the protective region;patterning the spacer layer to leave the spacer layer at least partially around a perimeter of the protective region while exposing the protective region;forming a bulk silicon layer over the spacer layer and bonding the spacer layer to the bulk silicon layer, wherein an air gap is left between the protective region and bulk silicon layer; andetching the bulk silicon layer to form a recess which meets the air gap, wherein the etched bulk silicon layer includes a suspended body of bulk silicon bounded by a support structure and coupled thereto by support arms.2. The method of claim 1 , wherein forming the protective region includes depositing a metal overlying the semiconductor workpiece claim 1 , the metal comprising one or more of Al claim 1 , AlCu claim 1 , Ti claim 1 , TiN claim 1 , TaN or Cu.3. The method of claim 1 , wherein etching provides an inner perimeter defined by the suspended body and an outer perimeter defined by the support structure.4. The method of claim 3 , wherein the protective region extends past an edge of the inner or the outer perimeter.5. The method of claim 3 , wherein the protective region is contiguous with the inner and outer perimeter.6. The method of claim 1 , wherein the etching of the bulk silicon layer comprises a deep reactive ion etching.7. The method of claim 1 , wherein the spacer layer comprises a high density plasma oxide.8. The method of claim 1 , wherein the ...

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Номер записи: 60
08-07-2021 дата публикации

METHOD AND DEVICE FOR A CARRIER PROXIMITY MASK

Номер: US20210210308A1
Автор: Bandy Ross, Carlson Charles T., Evans Morgan, Magee Ryan, MEYER TIMMERMAN THIJSSEN Rutger
Принадлежит: Applied Materials, Inc.

A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate. 1. A method of forming a variable etch depth profile in a substrate , comprisingproviding a substrate;providing a carrier, the carrier comprising a first carrier body coupled with a second carrier body, the substrate coupled between the first carrier body and the second carrier body, the first carrier body having one or more openings to expose work areas of the substrate, the one or more openings having edges;convolving a first edge of the edges in a first opening with a beam from a processing tool to create a convolved beam, the convolved beam to etch a work area of the substrate exposed by the first opening to create a variable etch depth profile in the substrate proximate to the first edge; anddecreasing a current density of the beam as the beam transitions from an edge of the first carrier body into an opening of the first carrier body.2. The method of claim 1 , further comprising increasing a current density of the beam as the beam transitions from a masked area of the substrate to an edge of the first carrier body.3. The method of claim 2 , wherein increasing the current density comprises increasing a duty cycle of the beam claim 2 , reducing a scan rate of the beam claim 2 , or a combination thereof.4. ...

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Номер записи: 61
15-07-2021 дата публикации

CALCITE CHANNEL STRUCTURES WITH HETEROGENEOUS WETTABILITY

Номер: US20210215658A1
Автор: Al-Yousef Ali Abdallah, AlOtaibi Mohammed Badri, Cha Dong kyu, Gmira Ahmed
Принадлежит: Saudi Arabian Oil Company

A method of making a portion of a microfluidic channel includes lithographically patterning a first pattern into a first layer of photoresist disposed on a substrate, the first pattern representative of morphology of a reservoir rock; etching the first pattern into the substrate to form a patterned substrate; disposing a second layer of photoresist onto the patterned substrate; lithographically patterning a second pattern into the second layer of photoresist to reveal portions of the patterned substrate; and depositing calcite onto the exposed portions of the patterned substrate. 1. A method of making a portion of a microfluidic channel , the method comprising:lithographically patterning a first pattern into a first layer of photoresist disposed on a substrate, the first pattern representative of morphology of a reservoir rock;etching the first pattern into the substrate to form a patterned substrate;disposing a second layer of photoresist onto the patterned substrate;lithographically patterning a second pattern into the second layer of photoresist to reveal portions of the patterned substrate; anddepositing calcite onto the exposed portions of the patterned substrate.2. The method of claim 1 , comprising:generating a lithography mask according to an image of the reservoir rock; andlithographically patterning the first pattern into the first layer of photoresist using the lithography mask.3. The method of claim 1 , in which lithographically patterning the first pattern into the first layer of photoresist comprises:exposing the first layer of photoresist to energy according to the first pattern; anddeveloping exposed portions of the first layer of photoresist.4. The method of claim 3 , in which exposing the first layer of photoresist to an energy beam comprises exposing the first layer of photoresist to an electron beam.5. The method of claim 1 , in which etching the first pattern into the substrate comprises dry etching the first pattern into a silicon substrate.6. ...

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Номер записи: 62
18-09-2014 дата публикации

MICROPROBE AND MICROPROBE MANUFACTURING METHOD

Номер: US20140283230A1
Автор: Li Yongfang, Tomizawa Yasushi
Принадлежит: KABUSHIKI KAISHA TOSHIBA

According to an embodiment, a microprobe includes a base and a lever. The base includes a first electrode provided on a surface thereof. The lever is supported by the base and includes a second electrode and a third electrode. The second electrode is connected between the first electrode and the third electrode. The third electrode is formed to project from the second electrode in a first direction in a main surface of the lever. A width of the third electrode in a second direction perpendicular to the first direction in the main surface defines a width of an electrical contact area when a scanning operation is performed by use of the third electrode in a third direction perpendicular to the main surface. 1. A microprobe comprising:a base including a first electrode provided on a surface thereof; anda lever supported by the base and including a second electrode and a third electrode;wherein the second electrode is connected between the first electrode and the third electrode, the third electrode is formed to project from the second electrode in a first direction in a main surface of the lever, and a width of the third electrode in a second direction perpendicular to the first direction in the main surface defines a width of an electrical contact area when a scanning operation is performed by use of the third electrode in a third direction perpendicular to the main surface.2. The microprobe according to claim 1 , wherein the lever comprises a lever lower layer and a lever upper layer claim 1 , the second electrode being formed on a first main surface and a second main surface of the lever lower layer claim 1 , the second main surface being perpendicular to the first main surface claim 1 , the third electrode being formed on a first main surface of the lever upper layer claim 1 , andwherein the second main surface of the lever lower layer is perpendicular to the first main surface of the lever upper layer.3. The microprobe according to claim 2 , wherein a material of ...

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Номер записи: 63
23-07-2015 дата публикации

POLYMER ANCHORED MICROELECTROMECHANICAL SYSTEM (MEMS) CANTILEVER AND METHOD OF FABRICATING THE SAME

Номер: US20150203345A1
Автор: Ramchandra Apte Prakash, Ramgopal Rao Valipe, Sachin Patkar Rajul
Принадлежит:

A microelectromechanical system (MEMS) cantilever includes a base and a cantilever beam projecting from the base. The cantilever beam includes a piezo layer sandwiched between an inorganic material structural layer and an inorganic material encapsulating and immobilising layer. A pair of electrical contacts are formed in the encapsulating and immobilising layer in contact with the piezo layer. The base consists of polymer. A method includes depositing a sacrificial layer on a substrate; forming a MEMS cantilever beam on the sacrificial layer by depositing an inorganic material structural layer thereon; depositing a piezo layer on the structural layer; and depositing an inorganic material encapsulating and immobilising layer on the piezo layer; forming a pair of electrical contacts in the encapsulating and immobilising layer in contact with the piezo layer; forming a polymer base for the cantilever beam; and etching the sacrificial layer to release the MEMS cantilever beam from the substrate. 1. A polymer anchored microelectromechanical system (MEMS) cantilever , comprising a base and a cantilever beam projecting from the base , wherein the cantilever beam consists of a piezo layer sandwiched between an inorganic material structural layer and an inorganic material encapsulating and immobilising layer and a pair of electrical contacts formed in the encapsulating and immobilising layer in contact with the piezo layer and wherein the base consists of polymer.2. The cantilever as claimed in claim 1 , wherein the inorganic material structural layer and inorganic material encapsulating and immobilising layer are selected from silicon nitride claim 1 , silicon oxide claim 1 , silicon carbide or diamond.3. The cantilever as claimed in claim 1 , wherein the piezo layer is selected from polysilicon claim 1 , graphene claim 1 , doped zinc oxide claim 1 , zinc oxide nanowires claim 1 , silicon nanowires claim 1 , carbon nanotubes claim 1 , platinum claim 1 , gold claim 1 , ...

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Номер записи: 64
23-07-2015 дата публикации

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Номер: US20150203351A1
Автор: FU GuangCai, YANG Tianlun, Zhang Xiaoping
Принадлежит:

Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process. 1. A semiconductor fabrication method , comprising:providing a semiconductor substrate comprising a first electrode layer therein, wherein the first electrode layer has a top surface coplanar with a top surface of the semiconductor substrate;forming a sacrificial layer on the semiconductor substrate and the first electrode layer;forming a first mask layer on the sacrificial layer, wherein the first mask layer is made of a conductive material;etching the first mask layer and the sacrificial layer until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer;performing a cleaning process to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings; andforming conductive plugs in the openings after the cleaning process.2. The method according to claim 1 , wherein the first mask layer is made of Ti claim 1 , TiN claim 1 , TaN claim 1 , Al claim 1 , or a combination thereof.3. The method according to claim 1 , wherein the first mask layer has a thickness of about 200 Å to about 300 Å.4. The method according to claim 1 , ...

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Номер записи: 65
25-09-2014 дата публикации

ELECTRICAL COMPONENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20140285060A1
Автор: YAMAZAKI Hiroaki
Принадлежит:

According to one embodiment, there is disclosed an electrical component. The electrical component includes a substrate, a MEMS device on the substrate. The MEMS device includes a first electrode fixed on the substrate, a second electrode above the first electrode opposed to the first electrode and configured to be movable, an anchor member on the substrate and configured to support the second electrode, and a spring member continuously formed from a region on an upper surface of the second electrode to a region on an upper surface of the anchor member and configured to connect the second electrode and the anchor member. The electrical component includes a reinforcing member provided on a lower surface of the spring member and configured to reinforce strength of the spring member. 1. An electrical component comprising:a substrate; anda MEMS device provided on the substrate, the MEMS device comprising:a first electrode fixed on the substrate;a second electrode arranged above the first electrode so as to be opposed to the first electrode and configured to be movable in a vertical direction;an anchor member provided on the substrate and configured to support the second electrode;a spring member continuously formed from a region on an upper surface of the second electrode to a region on an upper surface of the anchor member and configured to connect the second electrode and the anchor member; anda reinforcing member provided on a lower surface of the spring member and configured to reinforce strength of the spring member.2. The electrical component according to claim 1 , wherein the lower surface of the spring member is flat from the region on the upper surface of the second electrode to the region on the upper surface of the anchor member.3. The electrical component according to claim 1 , wherein the spring member comprises a brittle material.4. The electrical component according to claim 3 , wherein the brittle material is an insulator.5. The electrical component ...

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Номер записи: 66
18-06-2020 дата публикации

METHOD FOR FABRICATING MICROFLUIDIC DEVICES IN FUSED SILICA BY PICOSECOND LASER IRRADIATION

Номер: US20200189028A1
Автор: CHENG Ya, Li Xiaolong, Xu Jian
Принадлежит:

Method of fabricating a microfluidic device by means of inducing internal cracks in fused silica employing a picosecond laser beam, firstly utilizing irradiation of a focused temporally controlled picosecond laser beam in fused silica to generate a spatially selective modification region including randomly oriented nanocracks, then employing chemical etching to remove the irradiated area and obtain a hollow and connected three-dimensional microstructure, thereby achieving three-dimensional fabrication of microchannel structures inside the fused silica. The method can realize polarization insensitive three-dimensional uniform etching by regulating the pulse width of the picosecond laser beam, and has high chemical etch rate and selectivity, applicable for fabrication of large-sized three-dimensional microfluidic systems, high-precision 3D glass printing, etc. 1. A method for fabricating a microfluidic device by inducing randomly oriented nanocracks in fused silica via a picosecond laser beam , comprising:Step 1, irradiating with a picosecond laser beam, comprising the steps offixing a glass sample of fused silica on a programmable three-dimensional positioning stage,focusing a temporally controlled picosecond laser beam on the glass sample via a microscope objective,driving the programmable three-dimensional positioning stage and starting a picosecond laser beam irradiation simultaneously, anddirectly writing a three-dimensional microchannel pattern containing randomly oriented nanocracks inside the fused silica by irradiating with the picosecond laser beam; andStep 2: performing selective chemical etching, comprising the steps of placing the glass sample irradiated by the picosecond laser beam in a chemical etching solution, andperforming spatial selective etching removal on the directly written three-dimensional microchannel pattern, thereby obtaining a microchannel structure inside the fused silica sample possessing a three-dimensional geometric configuration.2. ...

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Номер записи: 67
02-10-2014 дата публикации

Semiconductor Devices and Methods for Manufacturing Semiconductor Devices

Номер: US20140291779A1
Автор: ENGELHARDT Manfred, Zgaga Martin
Принадлежит:

A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the time multiplexed etching process, an etching step having a second time duration is performed, wherein the second time duration is greater than the first time duration. 1. A method , comprising:performing a time multiplexed etching process, wherein a last etching step of the time multiplexed etching process is of a first time duration; andafter performing the time multiplexed etching process, performing an etching step of a second time duration, wherein the second time duration is greater than the first time duration.2. The method of claim 1 , wherein at least one of the time multiplexed etching process and the etching step performed after the time multiplexed etching process comprises a dry etching step.3. The method of claim 1 , wherein the time multiplexed etching process comprises multiple etching steps claim 1 , wherein each of the multiple etching steps of the time multiplexed etching process is of a respective time duration claim 1 , wherein the second time duration is greater than each of the respective time durations.4. The method of claim 1 , wherein the time multiplexed etching process comprises:performing an etching step comprising etching a surface of a first material;performing a depositing step comprising depositing a second material over the surface of the first material; andalternately repeating the etching step and the depositing step.5. The method of claim 4 , wherein the first material comprises a semiconductor material and the second material comprises a polymer.6. The method of claim 4 , further comprising:exposing a third material arranged under the first material, wherein during at least one of the time multiplexed etching process and the etching step performed after the time multiplexed etching process an etch rate of the third material is smaller ...

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Номер записи: 68
29-07-2021 дата публикации

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

Номер: US20210229978A1
Автор: EMILIO SERRANO Diego, JAFRI Ijaz, Nunan Thomas Kieran, Rahafrooz Amir
Принадлежит:

A method of manufacturing a semiconductor device includes providing a semiconductor layer having a first-type region and a second-type region that are stacked and interface with each other to form a p-n junction, the first-type region defining a first side of the semiconductor layer and the second-type region defining a second side of the semiconductor layer. The method further includes providing an insulating layer on the second side of the semiconductor layer and etching the semiconductor layer from the first side of the semiconductor layer toward the second side of the semiconductor layer to form a trench. The first-type region corresponds to one of a n-type region and a p-type region, and the second-type region corresponds to the other of the n-type region and the p-type region. 1. A method of manufacturing a semiconductor device , comprising:providing a semiconductor layer having a first-type region and a second-type region that are stacked and interface with each other to form a p-n junction, the first-type region defining a first side of the semiconductor layer and the second-type region defining a second side of the semiconductor layer;providing an insulating layer on the second side of the semiconductor layer; andetching the semiconductor layer from the first side of the semiconductor layer toward the second side of the semiconductor layer to form a trench,wherein the first-type region corresponds to one of a n-type region and a p-type region, and the second-type region corresponds to the other of the n-type region and the p-type region.2. The method of claim 1 , wherein the first-type region corresponds the p-type region and the second-type region corresponds to the n-type region.3. The method of claim 1 , wherein the second-type region has a thickness that is equal to or less than a maximum depletion width of the second-type region.4. The method of claim 1 , wherein the semiconductor layer comprises silicon.5. The method of claim 1 , wherein the method ...

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Номер записи: 69
19-07-2018 дата публикации

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES

Номер: US20180201502A1
Автор: Brigham Michael T., JAHNES Christopher V., LUCE Cameron E., MALING Jeffrey C., Murphy William J., Stamper Anthony K., White Eric J.
Принадлежит:

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam. 1. A method of forming a Micro-Electro-Mechanical System (MEMS) beam structure comprising:forming metal material and semiconductor material on a substrate;forming a MEMS beam above the metal material and the semiconductor material;forming the metal material and the semiconductor material above the MEMS beam;forming a lid over the metal material and the semiconductor material formed above the MEMS beam; and{'sub': '2', 'venting, using an XeFetchant, both the metal material and the semiconductor material above the MEMS beam and below the MEMS beam to form an upper cavity structure above the MEMS beam and below the lid and to form a lower cavity structure below the MEMS beam and above the substrate.'}2. The method of claim 1 , wherein the venting and film thicknesses are controlled to ensure that all or substantially all of the metal material is removed above the MEMS beam claim 1 , prior to the removal of the semiconductor material above the MEMS beam.3. The method of claim 1 , wherein the semiconductor material above and below the MEMS beam is one of silicon material and germanium material.4. The method of claim 3 , wherein the semiconductor material above and below the MEMS beam is silicon material claim 3 , and wherein forming the metal material and silicon material below the MEMS beam comprises forming the metal material on a substrate and forming the silicon material over the metal material.5. The method of claim 4 , wherein forming the metal material and silicon material above the MEMS beam comprises forming the silicon material within a via in contact with the silicon material below the MEMS beam ...

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Номер записи: 70
19-07-2018 дата публикации

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES

Номер: US20180201503A1
Автор: Brigham Michael T., JAHNES Christopher V., LUCE Cameron E., MALING Jeffrey C., Murphy William J., Stamper Anthony K., White Eric J.
Принадлежит:

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam. 1. A method of forming a Micro-Electro-Mechanical System (MEMS) beam structure comprising:forming both tungsten material and semiconductor material above and below a MEMS beam; and{'sub': '2', 'etching both the tungsten material and the semiconductor material at least above and below the MEMS beam, using an XeFetchant.'}2. The method of claim 1 , wherein the etching is preformed by venting both the tungsten material and the semiconductor material at least above and below the MEMS beam to form an upper cavity structure above the MEMS beam and a lower cavity structure below the MEMS beam.3. The method of claim 2 , wherein the MEMS beam comprises a cantilevered beam structure.4. The method of claim 3 , wherein the cantilevered beam structure comprises a first cantilevered beam and a second cantilevered beam separated from one another by a via which connects the upper cavity structure and the lower cavity structure to one another.5. The method of claim 2 , wherein the venting and film thicknesses are controlled to ensure that all or substantially all of the tungsten material is removed claim 2 , prior to the semiconductor material.6. The method of claim 5 , wherein the venting comprises forming a vent hole to expose at least the semiconductor material above the MEMS beam and performing an XeFetching process.7. The method of claim 1 , wherein the semiconductor material is silicon material.8. The method of claim 7 , wherein forming the tungsten material and silicon material below the MEMS beam comprises forming the tungsten material on a substrate and forming the silicon material over the tungsten ...

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Номер записи: 71
04-07-2019 дата публикации

NANOSTRUCTURES FABRICATED BY METAL ASISTED CHEMICAL ETCHING FOR ANTIBACTERIAL APPLICATIONS

Номер: US20190200608A1
Автор: Gifford Stacey M., HU HUAN, ROJAS PABLO M., Stolovitzky Gustavo A.
Принадлежит:

The method comprises contacting a silicon substrate with a silver salt and an acid for a time effective to produce spikes having a first end disposed on the silicon substrate and a second end extending away from the silicon substrate. The spikes have a second end diameter of about 10 nm to about 200 nm, a height of about 100 nm to 10 micrometers, and a density of about 10 to 100 per square microns. The nanostructures provide antimicrobial properties and can be transferred to the surface of various materials such as polymers. 1. An article comprising:a substrate having a patterned surface, the patterned surface comprising a plurality of nanostructure spikes having a first end attached to the substrate and a second end extending away from the substrate, the spikes having a second end diameter of about 10 nm to about 200 nm, a height of about 100 nm to about 1 micrometer, and a density of about 10 to 100 per square microns.2. The article of claim 1 , wherein the substrate comprises silicon.3. The article of claim 1 , wherein the substrate comprises a thermoset polymer claim 1 , a thermoplastic polymer claim 1 , or a combination thereof.4. The article of claim 1 , wherein the substrate comprises polyacetals claim 1 , polyolefins claim 1 , polyacrylics claim 1 , polyacrylates claim 1 , polycarbonates claim 1 , polystyrenes claim 1 , polyesters claim 1 , polyamides claim 1 , polyamideimides claim 1 , polyarylates claim 1 , polyarylsulfones claim 1 , polyethersulfones claim 1 , polyphenylene sulfides claim 1 , polyvinyl chlorides claim 1 , polysulfones claim 1 , polyimides claim 1 , polyetherimides claim 1 , polytetrafluoroethylenes claim 1 , polyetherketones claim 1 , polyether etherketones claim 1 , polyether ketone ketones claim 1 , polybenzoxazoles claim 1 , polyphthalides claim 1 , polyanhydrides claim 1 , polyvinyl ethers claim 1 , polyvinyl thioethers claim 1 , polyvinyl alcohols claim 1 , polyvinyl ketones claim 1 , polyvinyl halides claim 1 , polyvinyl nitriles ...

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Номер записи: 72
09-10-2014 дата публикации

Tunable Polish Rates By Varying Dissolved Oxygen Content

Номер: US20140299271A1
Автор: Dandu P.R. Veera, Lagudu Uma Rames Krishna, Penta Naresh K., Suryadevara Babu V.
Принадлежит: CLARKSON UNIVERSITY

A system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values. 1. A system for selectively removing a target material on a surface of a substrate , the system comprising:a substrate comprising a target material and a non-target material;a polishing solution having a pH of from about 1 to about 13, wherein the polishing solution comprises a plurality of functionalized abrasive particles;a polishing solution chamber comprising an oxygen inlet and at least a portion of said polishing solution, wherein oxygen is applied to said polishing solution until the concentration of oxygen dissolved in said polishing solution is at or between approximately 8.6 mg/L and approximately 16.6 mg/L; anda polishing pad configured to contact the surface of said substrate in the presence of at least a portion of said polishing solution;wherein said polishing pad selectively removes a predetermined thickness of the target material, and further wherein varying the dissolved oxygen content of the polishing solution varies the removal ratio of target material to non-target material during the removal step.2. The system of claim 1 , wherein the plurality of abrasive particles comprise silica.3. The system of claim 1 , wherein at least some of the plurality of abrasive silica particles are functionalized with n-(trimethoxysilylpropyl)isothiouronium chloride.4. The system of claim 1 , wherein the plurality of abrasive particles comprise a compound selected from the group consisting of ceria claim 1 , zirconia claim 1 , titania claim 1 , alumina claim 1 , germania claim 1 , ...

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Номер записи: 73
05-08-2021 дата публикации

SUPPORT STRUCTURE FOR MEMS DEVICE WITH PARTICLE FILTER

Номер: US20210238030A1
Автор: Cheng Chun-Wen, Chu Chia-Hua, Kuo Wen Cheng
Принадлежит:

Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure. 1. A method for forming a microelectromechanical systems (MEMS) device , the method comprising:forming a filter stack over a carrier substrate, wherein the filter stack comprises a particle filter layer having a particle filter;forming a support structure layer over the filter stack;patterning the support structure layer to define a support structure in the support structure layer such that the support structure has one or more segments; andbonding the support structure to a MEMS structure.2. The method of claim 1 , wherein the support structure layer is patterned to define the support structure while the support structure layer is disposed on the filter stack.3. The method of claim 1 , further comprising:patterning the carrier substrate to define a carrier substrate opening such that the one or more segments of the support structure are spaced laterally between opposing sidewalls of the carrier substrate that define the carrier substrate opening.4. The method of claim 1 , wherein forming the support structure layer comprises:bonding the support structure to the filter stack; andperforming a thinning process on the support structure layer to reduce a thickness of the support structure layer to less than a thickness of the carrier substrate.5. The method of claim 1 , wherein forming the support structure layer comprises:depositing the support structure layer on an upper surface of the filter stack by a chemical vapor ...

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Номер записи: 74
27-07-2017 дата публикации

Plasma Treatment Method to Meet Line Edge Roughness and Other Integration Objectives

Номер: US20170213700A1
Автор: Akiteru Ko, Vinh Luong
Принадлежит: Tokyo Electron Ltd

Provided is a method of patterning a layer on a substrate using an integration scheme, the method comprising: disposing a substrate having a structure pattern layer, a neutral layer, and an underlying layer, the structure pattern layer comprising a first material and a second material; performing a first treatment process using a first process gas mixture to form a first pattern, the first process gas comprising a mixture of CxHyFz and argon; performing a second treatment process using a second process gas mixture to form a second pattern, the second process gas comprising a mixture of low oxygen-containing gas and argon; concurrently controlling selected two or more operating variables of the integration scheme in order to achieve target integration objectives.

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Номер записи: 75
02-07-2020 дата публикации

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) MICRO ELECTRO-MECHANICAL (MEMS) MICROPHONE AND METHOD FOR FABRICATING THE SAME

Номер: US20200207613A1
Автор: Wang Chuan-Wei
Принадлежит:

A complementary metal-oxide-semiconductor (CMOS) micro electro-mechanical system (MEMS) microphone and a method for fabricating the same are disclosed. Firstly, a CMOS device including a semiconductor substrate, a first oxide insulation layer, a doped polysilicon layer, a second oxide insulation layer, a patterned polysilicon layer, and a metal wiring layer from bottom to top. The metal wiring layer is formed on the second oxide insulation layer. The patterned polysilicon layer includes undoped polysilicon. Then, a part of the metal wiring layer is removed to form a metal electrode and the semiconductor substrate is penetrated to have a chamber and expose the first oxide insulation layer, thereby forming a MEMS microphone. 1. A method for fabricating a complementary metal-oxide-semiconductor (CMOS) micro electro-mechanical system (MEMS) microphone comprising:providing a complementary metal-oxide-semiconductor (CMOS) device comprising a semiconductor substrate, a first oxide insulation layer, a doped polysilicon layer, a second oxide insulation layer, a patterned polysilicon layer, and a metal wiring layer from bottom to top, the metal wiring layer is formed on the second oxide insulation layer, and the patterned polysilicon layer comprises undoped polysilicon; andremoving a part of the metal wiring layer to form a metal electrode over the undoped polysilicon, using the undoped polysilicon to separate the metal electrode from the doped polysilicon layer, and penetrating through the semiconductor substrate to form a chamber and expose the first oxide insulation layer, thereby forming a micro electro-mechanical system (MEMS) microphone.2. The method for fabricating the CMOS MEMS microphone according to claim 1 , wherein in the step of removing the part of the metal wiring layer to form the metal electrode and penetrating through the semiconductor substrate to form the chamber and expose the first oxide insulation layer claim 1 , after removing the part of the metal ...

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Номер записи: 76
11-07-2019 дата публикации

ULTRASONIC TRANSDUCER AND METHOD FOR MANUFACTURING THE SAME, DISPLAY SUBSTARTE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20190210867A1
Автор: Zhao Lei
Принадлежит:

The present disclosure provides an ultrasonic transducer and a method for manufacturing an ultrasonic transducer, a display substrate and a method for manufacturing a display substrate. The method for manufacturing the ultrasonic transducer includes: forming a via hole in a substrate; forming a structural layer on a side of the substrate, the structural layer cover the via hole; and etching the structural layer from a side of the substrate away from the structural layer by using the substrate formed with the via hole as a blocking layer, to form a cavity at a position of the structural layer corresponding to that of the via hole. 1. A method for manufacturing an ultrasonic transducer , comprising:forming a via hole in a substrate;forming a structural layer on a side of the substrate, the structural layer cover the via hole; andetching the structural layer from a side of the substrate away from the structural layer by using the substrate formed with the via hole as a blocking layer, to form a cavity at a position of the structural layer corresponding to that of the via hole.2. The method of claim 1 , wherein the via hole is formed in the substrate by using a laser beam to irradiate the substrate.3. The method of claim 1 , wherein the structural layer is formed of organic material or inorganic insulation material.4. The method of claim 3 , wherein the structural layer is etched from the side of the substrate away from the structural layer by using a dry etching process and using the substrate formed with the via hole as the blocking layer.5. The method of claim 4 , wherein the dry etching process is performed by using plasma formed from oxygen.6. The method of claim 3 , wherein the structural layer is etched from the side of the substrate away from the structural layer by using a wet etching process and using the substrate formed with the via hole as the blocking layer.7. The method of claim 1 , further comprising:after forming the via hole in the substrate and before ...

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Номер записи: 77
30-10-2014 дата публикации

Method for Handling a Thin Substrate and for Substrate Capping

Номер: US20140322894A1
Автор: Kuei-Sung CHANG, Yi Heng Tsai
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.

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Номер записи: 78
30-10-2014 дата публикации

MICRO-POSTS HAVING IMPROVED UNIFORMITY AND A METHOD OF MANUFACTURE THEREOF

Номер: US20140322918A1
Автор: Bolle Cristian A., Pardo Flavio
Принадлежит:

As discussed herein, there is presented an apparatus comprising micro-posts. The apparatus includes a substrate having a planar surface, a plurality of micro-posts located on the planar surface, wherein each micro-post has a base portion on the planar surface and a post portion located on a top surface of the corresponding base portion, and wherein side surfaces of the base portions intersect the planar surface at oblique angles. 1. A method , comprising:performing a dry etch to form a post portion of a micro-post in a trench on a surface of a substrate;performing a wet etch to remove a layer from said substrate such that the post portion is located on a base portion and the base portion is located on a planar surface of the substrate, the base portion having side surfaces that intercept the top planar surface obliquely.2. The method of claim 1 , further comprising:forming a mask around the post portion and a laterally adjacent portion of the original surface prior to performing the wet etch.3. The method of claim 2 , wherein the performing a wet etch removes portion of the substrate below the mask.4. The method of wherein:performing the dry etch includes forming a trench in the substrate and to a depth within the substrate;forming a mask layer on the substrate, and the surfaces of the post, and the trench;removing the mask from the substrate such that a portion of the mask remains on the substrate adjacent the trench, and on the surfaces of the trench and the post; andusing an anisotropic etch to remove the substrate, including removing the substrate located under the mask to the depth of the trench.5. The method of claim 1 , wherein performing the dry etch includes using a plasma etch and the trench is formed to a depth of at least 1 micron.6. The method of claim 4 , wherein forming the mask includes oxidizing surfaces of the substrate claim 4 , the trench and the post to form an oxide mask thereon.7. The method of claim 4 , wherein forming the mask includes ...

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Номер записи: 79
06-11-2014 дата публикации

BULK NANO-RIBBON AND/OR NANO-POROUS STRUCTURES FOR THERMOELECTRIC DEVICES AND METHODS FOR MAKING THE SAME

Номер: US20140329389A1
Автор: Matus Gabriel A., Scullin Matthew L.
Принадлежит:

Structure including nano-ribbons and method thereof. The structure include multiple nano-ribbons. Each of the multiple nano-ribbons corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 μm. Each of the multiple nano-ribbons corresponds to a cross-sectional area associated with a ribbon thickness, and the ribbon thickness ranges from 5 nm to 500 nm. Each of the multiple nano-ribbons is separated from at least another nano-ribbon selected from the multiple nano-ribbons by a second distance ranging from 5 nm to 500 nm. 144-. (canceled)45. A method for making a structure including nano-ribbons , the method comprising:providing a semiconductor substrate including a first surface, the first surface including first portions and second portions;forming one or more layers on the first portions of the first surface, the second portions of the first surface being exposed; andetching the semiconductor substrate through the second portions of the first surface to form at least multiple nano-ribbons, each of the nano-ribbons corresponding to a first end and a second end, the first end and the second end being separated by a first distance of at least 100 μm, each of the nano-ribbons corresponding to a cross-sectional area associated with a ribbon thickness ranging from 5 nm to 500 nm, each of the nano-ribbons being separated from at least another nano-ribbon selected from the multiple nano-ribbons by a second distance ranging from 5 nm to 500 nm.46. The method of claim 45 , and further comprising filling one or more separation regions between at least two of the multiple nano-ribbons with one or more fill materials.47. The method of wherein the semiconductor substrate includes one or more semiconductor materials different from the one or more fill materials.48. The method of claim 45 , and further comprising roughening sidewalls of the multiple nano-ribbons respectively.49. The method of claim 45 , and ...

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Номер записи: 80
25-08-2016 дата публикации

PROCESS AND SYSTEM FOR THE SUBMICRON STRUCTURING OF A SUBSTRATE SURFACE

Номер: US20160247665A1
Автор: Amaral Thiago Silva, Belmonte Thierry, Cardoso Rodrigo Perito, Gries Thomas, Noel Cedric
Принадлежит:

The subject of the invention is a process for submicron structuring of a surface () of a substrate () comprising the steps of generating a plasma at atmospheric pressure above said surface (); and of injecting onto said surface (), through said plasma, at least one gaseous precursor by means of at least one capillary () of submicron diameter. 1. Process for submicron structuring of a surface of a substrate comprising the following steps:generation of a plasma at atmospheric pressure above said surface;injection onto said surface, through said plasma, of at least one gaseous precursor by means of at least one capillary of submicron diameter.2. Process according to claim 1 , that wherein the gaseous precursor and the plasma are selected in order to produce a localized etching.3. Process according to claim 1 , wherein the gaseous precursor and the plasma are selected in order to produce a localized deposition.4. Process according to claim 3 , wherein several gaseous precursors are injected successively into said at least one capillary claim 3 , or successively into a plurality of capillaries of submicron diameters claim 3 , or simultaneously into a plurality of capillaries of submicron diameters.5. Process according to claim 1 , wherein the plasma generated at atmospheric pressure is a cold plasma.6. Process according to claim 1 , wherein the capillary has a diameter of the order of 100 nanometres.7. Process according to claim 1 , wherein said process additionally comprises a step of localized heating of the substrate.8. System for the submicron structuring of a surface of a substrate claim 1 , said system comprising:at least one plasma source capable of generating a plasma at atmospheric pressure above said surface;at least one capillary of submicron diameter for the injection onto said surface of at least one gaseous precursor through said plasma.9. System according to claim 8 , wherein said system additionally comprises means capable of allowing a relative movement ...

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Номер записи: 81
10-09-2015 дата публикации

MEMS DEVICE CHIP MANUFACTURING METHOD

Номер: US20150251902A1
Автор: Bernales Aris, Brown Mark, Martin Devin
Принадлежит: DISCO CORPORATION

A MEMS device chip manufacturing method including a grinding step of grinding a device forming area of a wafer to thereby form a recess and an annular reinforcing portion surrounding the recess, a MEMS device forming step of performing any processing including etching to the wafer after performing the grinding step to thereby form a plurality of MEMS devices partitioned by a plurality of crossing division lines in the device forming area, and a dividing step of dividing the wafer along the division lines after performing the MEMS device forming step to thereby manufacture a plurality of MEMS device chips. 1. A MEMS device chip manufacturing method comprising:a grinding step of grinding a device forming area of a wafer to thereby form a recess and an annular reinforcing portion surrounding said recess;a MEMS device forming step of performing any processing including etching to said wafer after performing said grinding step to thereby form a plurality of MEMS devices partitioned by a plurality of crossing division lines in said device forming area; anda dividing step of dividing said wafer along said division lines after performing said MEMS device forming step to thereby manufacture a plurality of MEMS device chips.2. The MEMS device chip manufacturing method according to claim 1 , wherein said dividing step comprises:a modified layer forming step of applying a laser beam having a transmission wavelength to said wafer along each division line so as to focus said laser beam inside said wafer, thereby forming a modified layer inside said wafer along each division line; andan external force applying step of applying an external force to said wafer after performing said modified layer forming step to thereby divide said wafer into said individual MEMS device chips along each division line where said modified layer is formed as a break start point. 1. Field of the InventionThe present invention relates to a MEMS device chip manufacturing method.2. Description of the ...

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Номер записи: 82
30-08-2018 дата публикации

SILICON CARBIDE STRUCTURE, DEVICE, AND METHOD

Номер: US20180244513A1
Автор: Hobart Karl D., Imhoff Eugene A., Kub Francis J., MYERS-WARD Rachael L.
Принадлежит: The Government of the United States of America, as represented by the Secretary of the Navy

A structure and method of fabricating suspended beam silicon carbide MEMS structure with low capacitance and good thermal expansion match. A suspended material structure is attached to an anchor material structure that is direct wafer bonded to a substrate. The anchor material structure and the suspended material structure are formed from either a hexagonal single-crystal SiC material, and the anchor material structure is bonded to the substrate while the suspended material structure does not have to be attached to the substrate. The substrate may be a semi-insulating or insulating SiC substrate. The substrate may have an etched recess region on the substrate first surface to facilitate the formation of the movable suspended material structures. The substrate may have patterned electrical electrodes on the substrate first surface, within recesses etched into the substrate. 1. A silicon carbide MEMS structure , comprising:one or more suspended material structures comprising hexagonal single-crystal SiC material, wherein the thickness of the one or more suspended material structures is greater than 1 micron and up to 500 microns;one or more anchor material structures comprising hexagonal single-crystal SiC material; anda substrate;wherein the one or more suspended material structures are attached to the one or more anchor material structures; andwherein the one or more anchor material structures are bonded to the substrate.2. The silicon carbide MEMS structure of claim 1 , wherein the substrate is semi-insulating.3. The silicon carbide MEMS structure of claim 1 , wherein the hexagonal single-crystal SiC material is a 4H or 6H SiC material.4. The silicon carbide MEMS structure of claim 1 , wherein the substrate has an etched recess region.5. The silicon carbide MEMS structure of claim 1 , wherein the substrate has patterned electrical electrodes.6. The silicon carbide MEMS structure of claim 1 , wherein the one or more anchor material structures are bonded to the ...

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Номер записи: 83
17-09-2015 дата публикации

Pressure Difference Sensor and Method for its Manufacture

Номер: US20150260598A1
Автор: Getman Igor, Link Thomas, Nommensen Peter, Teipen Rafael
Принадлежит:

A pressure difference sensor includes a measuring membrane, which is arranged between two platforms and connected pressure-tightly with the platforms, in each case, via a first insulating layer for forming pressure chambers between the platforms and the measuring membrane. The insulating layer is especially silicon oxide, wherein the pressure difference sensor further includes an electrical transducer for registering a pressure dependent deflection of the measuring membrane. The platforms have support positions, against which the measuring membrane lies at least partially in the case of overload, wherein the support positions have position dependent heights, characterized in that the support positions are formed in the first insulating layer by isotropic etching, and the particular height h of a support position, in each case, is a function of a distance from a base of the support position in the reference plane. 118-. (canceled)19. A pressure difference sensor , comprising:a measuring membrane;a first platform;a second platform; andan electrical transducer for registering a pressure dependent deflection of the measuring membrane, wherein:said measuring membrane is arranged between said first and said second platforms;said measuring membrane is connected pressure-tightly with said first platform and said second platform, in each case, via a first insulating layer for forming a first, respectively second, pressure chamber between said platforms and said measuring membrane;said insulating layer comprises especially silicon oxide;wherein said first platform and/or said second platform have/has support positions, against which said measuring membrane lies at least partially in the case of unilateral overload;said support positions have position dependent heights with respect to a reference plane, which extends parallel to a plane, which is defined by said measuring membrane;said support positions are formed in said first insulating layer by isotropic etching, and the ...

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Номер записи: 84
08-09-2016 дата публикации

METHOD OF FABRICATING MEMS DEVICES USING PLASMA ETCHING AND DEVICE THEREFOR

Номер: US20160257559A1
Автор: Chen WJ (Wen-Chih), Chuang Ben (Wen-Pin), Kuo MH (Ming-Hong), Lee Tse-Hsi “Terrence”
Принадлежит:

A method for fabricating a MEMS sensor device. The method can include providing a substrate, forming an IC layer overlying the substrate, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, forming a MEMS layer having a pair of designated sense electrode portions and a designated proof mass portion overlying the oxide layer, forming a via structure within each of the designated sense electrode portions, and etching the MEMS layer to form a pair of sense electrodes and a proof mass from the designated sense electrode portions and proof mass portions, respectively. The via structure can include a ground post and the proof mass can include a sense comb. The MEMS sensor device formed using this method can result is more well-defined edges of the proof mass structure. 1. A method of fabricating a MEMS device , the method comprising:providing a substrate member;forming an IC (Integrated Circuit) layer overlying the substrate member;forming an oxide layer overlying the IC layer;forming a metal layer coupled to the IC layer through the oxide layer;forming a MEMS layer having a pair of designated sense electrode portions and a designated proof mass portion;forming a via structure within each of the designated sense electrode portions; andetching the MEMS layer to form a pair of sense electrodes and a proof mass from the designated sense electrode portions and proof mass portions, respectively;wherein each of the sense electrodes includes a ground post and the proof mass includes a sense comb.2. The method of wherein the MEMS layer comprises a device selected from a group consisting of: an accelerometer and a gyroscope.3. The method of wherein the pair of sense electrodes are anchored to the oxide layer.4. The method of further comprising:forming a cap layer comprising a plurality of stops; anddisposing the cap layer on top of the MEMS layer to thereby encapsulate the MEMS layer.5. The method of wherein at ...

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Номер записи: 85
20-11-2014 дата публикации

METHOD FOR ETCHING A COMPLEX PATTERN

Номер: US20140342557A1
Автор: Diem Bernard
Принадлежит: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

A method for etching a desired complex pattern in a first face of a substrate, including: simultaneous etching of at least a first and a second sub-pattern through the first face of the substrate, the etched sub-patterns being separated by at least one separating wall, a width of the first sub-pattern being greater than a width of the second sub-pattern at the first face, and a depth of the first sub-pattern being greater than a depth of the second sub-pattern in a direction perpendicular to the said first face; and removing or eliminating the separating wall to expose the desired complex pattern. 115-. (canceled)16. A method for etching a desired complex pattern in a first face of a substrate , comprising:simultaneous etching of at least a first and a second sub-pattern through the first face of the substrate, the etched sub-patterns being separated by at least one separating wall, a width of the first sub-pattern being greater than a width of the second sub-pattern at the first face, and a depth of the first sub-pattern being greater than a depth of the second sub-pattern in a direction perpendicular to the first face; andremoving or eliminating the separating wall to expose the desired complex pattern.17. The method for etching a complex pattern according to claim 16 , at least the first and the second sub-pattern being etched through a mask whose openings correspond to dimensions of the first and the second sub-pattern formed in the first face of the substrate.18. The method for etching a complex pattern according to claim 16 , the width of the sub-patterns at the first face of the substrate being between a few nanometers and several micrometers claim 16 , or between 0.1 μm and 500 μm.19. The method for etching a complex pattern according to claim 16 , the depth of the sub-patterns being between a few nanometers and several micrometers claim 16 , or between 0.1 μm and 500 μm.20. The method for etching a complex pattern according to claim 16 , wherein plural ...

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Номер записи: 86
06-08-2020 дата публикации

Method for Manufacturing Integrated Emitter Elements Having an Optical Filter

Номер: US20200249380A1
Автор: Pindl Stephan, STEIERT Matthias
Принадлежит:

A method for manufacturing integrated IR (IR=infrared) emitter elements having an optical filter comprises back side etching through a carrier substrate, forming adhesive spacer elements on a conductive layer on the carrier substrate, placing a filter substrate having a filter carrier substrate and a filter layer on the adhesive spacer elements, fixing the adhesive spacer elements to the carrier substrate and the filter substrate by curing, pre-dicing through the filter substrate for exposing the contact pads of the structured conductive layer, and dicing through the frame structure in the carrier substrate for separating the integrated IR emitter elements having the optical filter. 1. A method for manufacturing integrated IR (IR=infrared) emitter elements having an optical filter , comprising:providing a carrier substrate having a target thickness, wherein an insulating material layer and a structured conductive layer are arranged on a first main surface region of the carrier substrate, wherein the insulating material layer is arranged between the carrier substrate and the structured conductive layer;back side etching through the carrier substrate for providing cavities extending between the first and second main surface regions of the carrier substrate, wherein the cavities form a frame structure which laterally surrounds the cavities,wherein first portions of the structured conductive layer which span the cavities form active heating regions of the IR emitter elements, andwherein second and third portions of the structured conductive layer which are supported by the frame structure form first and second contact pads of the IR emitter elements;forming adhesive spacer elements on portions of the structured conductive layer, which are supported by the frame structure;placing a filter substrate having a filter carrier substrate and a filter layer on the adhesive spacer elements, so that the filter layer is arranged between the adhesive spacer elements and the filter ...

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Номер записи: 87
04-12-2014 дата публикации

METHOD FOR MAKING A SUSPENDED PART OF A MICROELECTRONIC AND/OR NANOELECTRONIC STRUCTURE IN A MONOLITHIC PART OF A SUBSTRATE

Номер: US20140357006A1
Автор: BEN MBAREK Sofiane, GAILLARD Frederic-Xavier, Giroud Sophie
Принадлежит: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Method for making at least one first suspended part of a microelectronic or nanoelectronic structure from a monolithic part of a first substrate, the method comprising the following steps: 1. A method for making at least one first suspended part of a microelectronic or nanoelectronic structure from a monolithic part of a first substrate comprising a front face and a back face , said method comprising the following steps:a) make a first etching with a first given depth in the front face so as to delimit the first suspended part by trenches, the trenches being delimited by side edges and a bottom,b) deposit a protective material on at least the side edges of the trenches forming the flanks of the first suspended part, said protective material being capable of protecting said side edges against a subsequent physicochemical treatment,c) make a second etching at least in the bottom of the trenches so as to obtain trenches with a second depth greater than the first depth, the side edges then comprising a part covered by the protective material and a part not covered by the protective material,d) make a physicochemical treatment of the first substrate in the part of the side edges not covered by the protective material so as to at least partly modify a zone of the substrate placed opposite the front face relative to the first suspended part, called the treated zone,e) release the first suspended part by removal of at least the zone treated in step d).2. The method according to claim 1 , in which the physicochemical treatment is an electrochemical treatment.3. The method according to claim 2 , in which the treatment is an anodization.4. The method according to claim 1 , in which the physicochemical treatment is a partial isotropic etching.5. The method according to claim 1 , in which the first substrate is a monocrystalline semiconducting material.6. The method according to claim 1 , comprising claim 1 , a step d1) to oxidize at least the treated zone between step d) and ...

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Номер записи: 88
28-10-2021 дата публикации

SEGMENTED PEDESTAL FOR MOUNTING DEVICE ON CHIP

Номер: US20210331915A1
Автор: HSIEH Yuan-Chih, Tseng Lee-Chuan
Принадлежит:

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal. 1. A method , comprising:forming a dielectric matrix over a semiconductor substrate, wherein a first device structure is contained within the dielectric matrix;patterning the dielectric matrix with an opening and a plurality of slits in an area of the dielectric matrix adjacent the opening, wherein the opening is wider than the slits;etching the semiconductor substrate through the dielectric matrix to form a cavity beneath the opening and a pedestal adjacent the opening, wherein the pedestal is furrowed by trenches resulting from etching through the slits;etching to remove the dielectric matrix from the pedestal;placing a second device on the semiconductor substrate over the cavity and the pedestal; andbonding the second device to the semiconductor substrate using metal in the cavity to produce a structure in which the second device is abutting the pedestal.2. The method of claim 1 , further comprising pressing the second device and the semiconductor substrate together during the bonding process at least until the second device is abutting the pedestal.3. The method of claim 1 , wherein the slits reduce a critical dimension of the dielectric matrix over the pedestal to less than a thickness of the dielectric matrix.4. The ...

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Номер записи: 89
11-12-2014 дата публикации

SUBSTRATE ETCHING METHOD AND SUBSTRATE PROCESSING DEVICE

Номер: US20140363975A1
Автор: Li Dongsan, Wang Chun, Wei Gang
Принадлежит: Beijing NMC Co., Ltd.

A substrate etching method and a substrate processing device, the substrate etching method includes: S1: placing a substrate to be processed into a reaction chamber; S2: supplying etching gas into the reaction chamber; S3: turning on an excitation power supply to generate plasma in the reaction chamber; S4: turning on a bias power supply to apply bias power to the substrate; S5: turning off the bias power supply, and meanwhile, starting to supply deposition gas into the reaction chamber; S6: stopping supply of the deposition gas into the reaction chamber, and meanwhile, turning on the bias power supply; S7: repeating steps S5-S6, until the etching process is completed. In the whole etching process, the etching operation is always performed, and the deposition operation is performed sometimes. Therefore, during the deposition operation, the plasma in the reaction chamber can etch away at least a part of deposited polymers formed by the deposition operation on a sidewall of an etched section, so that the sidewall of the etched section of the substrate is smooth. 1. A substrate etching method , including:S1: placing a substrate to be processed into a reaction chamber;S2: supplying etching gas into the reaction chamber;S3: turning on an excitation power supply to generate plasma in the reaction chamber;S4: turning on a bias power supply to apply bias power to the substrate;S5: turning off the bias power supply, and meanwhile, starting to supply deposition gas into the reaction chamber;S6: stopping supply of the deposition gas into the reaction chamber, and meanwhile, turning on the bias power supply; andS7: repeating steps S5-S6, until the etching process is completed.2. The substrate etching method of claim 1 , wherein with the progress of process claim 1 ,during each period in which the bias power supply is turned on, the power of the bias power supply, the flow rate of the etching gas, and/or the power of the excitation power supply are kept constant or increased ...

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Номер записи: 90
29-09-2016 дата публикации

Block copolymer

Номер: US20160280832A1
Автор: Eun Young Choi, Je Gwon Lee, Jeong Kyu Lee, Jung Keun Kim, Mi Sook Lee, No Jin Park, Se Jin Ku, Sung Joon Oh, Sung Soo Yoon
Принадлежит: LG Chem Ltd

The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

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Номер записи: 91
29-09-2016 дата публикации

Block copolymer

Номер: US20160280835A1
Автор: Je Gwon Lee, Jeong Kyu Lee, Jung Keun Kim, Sung Joon Oh, Sung Soo Yoon, Yeon Joo Kang
Принадлежит: LG Chem Ltd

The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

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Номер записи: 92
29-08-2019 дата публикации

VERTICALLY STACKED NANOFLUIDIC CHANNEL ARRAY

Номер: US20190263655A1
Автор: Cheng Kangguo, Lee Choonghyun, Li Juntao, Xu Peng
Принадлежит:

Techniques regarding a vertical nanofluidic channel array are provided. For example, one or more embodiments described herein can regard an apparatus that can comprise a semiconductor substrate and a dielectric layer adjacent to the semiconductor substrate. The dielectric layer can comprise a first nanofluidic channel and a second nanofluidic channel. The second nanofluidic channel can be located between the first nanofluidic channel and the semiconductor substrate. 1. An apparatus , comprising:a semiconductor substrate; anda dielectric layer adjacent to the semiconductor substrate, the dielectric layer comprising a first nanofluidic channel and a second nanofluidic channel, wherein the second nanofluidic channel is located between the first nanofluidic channel and the semiconductor substrate.2. The apparatus of claim 1 , wherein the dielectric layer is a silicon dioxide layer.3. The apparatus of claim 1 , further comprising:a first reservoir having a first parameter defined by the dielectric layer; anda second reservoir having a second parameter defined by the dielectric layer, wherein the first nanofluidic channel extends from the first reservoir to the second reservoir, and wherein the second nanofluidic channel extends the first reservoir to the second reservoir.4. The apparatus of claim 1 , wherein the semiconductor substrate forms a first side of the second nanofluidic channel.5. The apparatus of claim 1 , wherein the dielectric layer forms a first side of the first nanofluidic channel and a second side of the first nanofluidic channel claim 1 , and wherein the dielectric layer further forms a first side of the second nanofluidic channel and a second side of the second nanofluidic channel.6. The apparatus of claim 5 , further comprising:a first silicon layer that forms a third side of the second nanofluidic channel, wherein the third side of the second nanofluidic channel is parallel with the semiconductor substrate, and wherein the dielectric layer is ...

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Номер записи: 93
29-08-2019 дата публикации

METHOD FOR PRODUCING A MICROSTRUCTURE COMPONENT, MICROSTRUCTURE COMPONENT AND X-RAY DEVICE

Номер: US20190267149A1
Автор: Deutinger Andrea, Zapf Joerg
Принадлежит: Siemens Healthcare GmbH

A method for producing a microstructure component, a microstructure component and an x-ray device are disclosed. In the method, a plurality of punctiform injection structures are inserted in a grid in a first substrate direction and a second substrate direction, standing at right angles thereto, into a first surface of a wafer-like silicon substrate. The injection structures are lengthened into drilled holes in the depth direction of the silicon substrate in a first etching step. A second surface of the silicon substrate is then at least partly removed for rear-side opening of the drilled holes in a second etching step and in a third etching step, an etching medium acting anisotropically is poured alternately through the drilled holes from both surfaces of the silicon substrate, so that drilled holes arranged next to one another in the first substrate direction connect to form a column running in the first substrate direction. 1. A method for producing a microstructure component , comprising:inserting a plurality of punctiform injection structures in a grid in a first substrate direction and inserting a second substrate direction, standing at right angles to the first substrate direction, into a first surface of a wafer-like silicon substrate;lengthening, in a first etching step, the punctiform injection structures into drilled holes in a depth direction of the silicon substrate;at least partly removing, in a second etching step, a second surface of the silicon substrate, lying opposite the first surface, for rear-side opening of the drilled holes; andpouring in a third etching step, an etching medium, effective anisotropically, alternately through the drilled holes from both surfaces of the silicon substrate, so that drilled holes arranged next to one another in the first substrate direction connect to form a column running in the first substrate direction.2. The method of claim 1 , wherein the punctiform injection structures in the second substrate direction are ...

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Номер записи: 94
18-12-2014 дата публикации

PLASMA PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Номер: US20140370715A1
Автор: CHUNG Seng-Hyun, LEE Hyang-Joo
Принадлежит:

Provided are a plasma processing method and a substrate processing apparatus. The plasma processing method includes mounting at least one first plasma source and at least one second plasma source on a chamber, supplying a first gas to the first plasma source, supplying a second gas different from the first gas to the second plasma source, applying power to the first plasma source to generate first plasma, applying power to the second plasma source to generate second plasma, and processing a substrate disposed inside the chamber using the first and second plasma. 1. A plasma processing method comprising:mounting one or more first plasma sources and one or more second plasma sources on a chamber;supplying a first gas to the first plasma sources;supplying a second gas different from the first gas to the second plasma sources;applying power to the first plasma sources to generate first plasma;applying power to the second plasma sources to generate second plasma; andprocessing a substrate disposed inside the chamber using the first plasma and the second plasma.2. The plasma processing method of claim 1 , wherein a hole is formed at the substrate during the step of processing the substrate disposed inside the chamber using the first plasma and the second plasma.3. The plasma processing method of claim 1 , wherein the first plasma and the second plasma are alternately generated.4. The plasma processing method of claim 1 , wherein the first gas includes at least one of a fluorine-containing gas and a chlorine-containing gas claim 1 , andwherein the second gas may include at least one of an oxygen gas, a hydrogen gas, and a carbon-containing gas.5. The plasma processing method of claim 1 , wherein the first gas includes at least one of SF claim 1 , CF claim 1 , and CHF claim 1 , and{'sub': 4', '8', '3', '6', '2', '2, 'wherein the second gas includes at least one of CF, CF, CF, oxygen, and hydrogen.'}6. The plasma processing method of claim 1 , wherein each of the first and ...

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Номер записи: 95
15-10-2015 дата публикации

Hermetic encapsulation for microelectromechanical systems (mems) devices

Номер: US20150291415A1
Автор: Feras Eid, Sarah K. Haney, Sasha N. OSTER, Weng Hong Teh
Принадлежит: Intel Corp

Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.

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Номер записи: 96
09-12-2021 дата публикации

MEMS DEVICE, MANUFACTURING METHOD OF THE SAME, AND INTEGRATED MEMS MODULE USING THE SAME

Номер: US20210380404A1
Автор: Chang Heng-Chung, HUANG Jhih-Jie, Lin Jing-Yuan, TSAI Chih-Ya
Принадлежит:

A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed on and corresponds to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a sealing layer, and at least a portion of the sealing layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the sealing layer define a chamber. 1. A manufacturing method of a MEMS device , comprising:providing a substrate having at least one contact;forming a first dielectric layer on the substrate, wherein the first dielectric layer has at least one through hole exposing a portion of a top surface of the contact;forming at least one first metal layer on the first dielectric layer, wherein at least a portion of the first metal layer is electrically connected to the contact;forming a second dielectric layer on the first dielectric layer and the first metal layer;forming a sacrificial layer on the second dielectric layer;forming a structure layer on the second dielectric layer and the sacrificial layer;removing a portion of the structure layer to form a first opening, wherein the first opening exposes a portion of a top surface of the sacrificial layer;removing a portion of the sacrificial layer through the first opening to form a second opening, wherein the second opening exposes a portion of a top surface of the second dielectric layer;removing a portion of the second dielectric layer through the second opening to form a recess structure, wherein a cross-sectional area at a ...

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Номер записи: 97
20-10-2016 дата публикации

Method for Fabricating Suspended MEMS Structures

Номер: US20160304340A1
Автор: Downey Brian P., MEYER David J.
Принадлежит: The Government of the United States of America, as represented by the Secretary of the Navy

A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure. 1. A method for fabricating a suspended MEMS structure , comprising:providing a substrate comprising a single-crystal material;epitaxially growing a sacrificial release layer on an upper surface of the substrate, the substrate and the sacrificial release layer having similar crystal structures with 3- or 6-fold symmetry and similar in-plane lattice constants;epitaxially growing a functional device layer on an upper surface of the sacrificial release layer;patterning a portion of the functional device layer to define an outline of a suspended MEMS structure to be formed from a portion of the functional device layer;in a first etching step, etching the patterned portion of the functional device layer to form one or more windows in the functional device layer and to further define the outline of the suspended MEMS structure to be formed from the functional device layer; andin a second etching step, using a selective release agent, etching the sacrificial release layer to remove the sacrificial release layer from underneath at least the portion of the functional device layer comprising the suspended MEMS structure.2. The method according to claim 1 , wherein at least one of the sacrificial release layer and the functional device layer comprises a single-crystal material.3. The method according to ...

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Номер записи: 98
18-10-2018 дата публикации

SUPERHYDROPHOBIC AND SUPEROLEOPHOBIC NANOSURFACES

Номер: US20180297321A1
Автор: Choi Chulmin, Jin Sungho
Принадлежит:

Devices, systems and techniques are described for producing and implementing articles and materials having nanoscale and microscale structures that exhibit superhydrophobic, superoleophobic or omniphobic surface properties and other enhanced properties. In one aspect, a surface nanostructure can be formed by adding a silicon-containing buffer layer such as silicon, silicon oxide or silicon nitride layer, followed by metal film deposition and heating to convert the metal film into balled-up, discrete islands to form an etch mask. The buffer layer can be etched using the etch mask to create an array of pillar structures underneath the etch mask, in which the pillar structures have a shape that includes cylinders, negatively tapered rods, or cones and are vertically aligned. In another aspect, a method of fabricating microscale or nanoscale polymer or metal structures on a substrate is made by photolithography and/or nano imprinting lithography. 1. A method of fabricating a material with a pillar array surface , comprising:depositing a buffer layer of a buffer layer material on a substrate material, wherein the buffer layer material is a silicon-containing material;adding a film layer over the buffer layer;annealing the film layer to form balled-up structures that are distributed in an array of balled-up islands over the buffer layer to produce an etch mask;etching the buffer layer using the etch mask to create an array of pillar structures including the buffer layer material underneath the etch mask, wherein the pillar structures have a shape that includes at least one of a substantially straight cylinder, negatively tapered rod, or cone and are aligned substantially vertically, and wherein the pillar structures include the balled-up structures over the buffer layer material; andapplying a coating over the array of pillar structures to form an outer layer,wherein the applying the coating comprises dip coating the array of pillar structures into a thin layer of a ...

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Номер записи: 99
18-10-2018 дата публикации

METHOD FOR PROTECTING A MEMS UNIT AGAINST INFRARED INVESTIGATIONS AND MEMS UNIT

Номер: US20180297835A1
Автор: CURCIC Michael, Kunz Ulrich, Willers Oliver, Zinober Sven
Принадлежит:

A method is provided for protecting a MEMS unit, in particular a MEMS sensor, against infrared investigations, a surface patterning being performed for at least one first area of a surface of the MEMS unit, the first area absorbing, reflecting or diffusely scattering more than 50%, in particular more than 90% of an infrared light incident upon it. 1. A method for protecting a MEMS unit against infrared investigations , the method comprising:performing a surface patterning being for at least one first area of a surface of the MEMS unit, the first area one of absorbing, reflecting or diffusely scattering more than 50% of an infrared light incident upon it.2. The method as recited in claim 1 , wherein the MEMS unit is a MEMS sensor.3. The method as recited in claim 1 , wherein the first area one of absorbs claim 1 , reflects or diffusely scatters more than 90% of the infrared light incident upon it.4. The method as recited in claim 1 , wherein the surface patterning is performed prior to a bonding of parts of the MEMS unit.5. The method as recited in claim 4 , wherein the first area is an inner surface of the MEMS unit and borders on a cavity of the MEMS unit.6. The method as recited in claim 1 , wherein for the first area claim 1 , the surface patterning is performed after production of the MEMS unit and the first area includes at least parts of an outer surface of the MEMS unit.7. The method as recited in claim 1 , wherein infrared light striking the first area from any angle of incidence is one of absorbed claim 1 , reflected or diffusely scattered by the first area at at least 90%.8. The method as recited in claim 1 , wherein the surface patterning occurs by KOH etching.9. The method as recited in claim 1 , wherein the surface patterning increases a roughness of the first area.10. The method as recited in claim 1 , wherein the surface patterning of the first area includes grid structures.11. The method as recited in claim 1 , wherein the first area acts as one of a ...

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Номер записи: 100