Benign, liquid chemical system-based back end of line (beol) cleaning

A back end of line cleaning process is performed using a liquid mixture containing at least two benign chemicals that can form a eutectic. In one embodiment, liquid mixtures of urea and choline chloride, at a molar ratio of 2:1, in the temperature range of 40° C. to 70° C. are used to remove etch residues on copper interconnects and dielectric layers created by g-line and DUV resists. In certain embodiments, eutectic, hypereutectic, and hypoeutectic compositions of the at least two benign chemicals are used.

Non-bleaching procedure for the removal of tea and coffee stains

A novel approach to the removal of coffee and tea stains from dishes is disclosed. Tea, coffee and other stains caused by tannins are particularly difficult to remove and traditional techniques include harsh treatments that use bleach, or other environmentally undesirable chemicals such as phosphates, EDTA, NTA or other aminocarboxylates. Applicants have found that an acid rinse prior to alkaline cleaning of stained dishware such as ceramics porcelain and the like can remove up to one hundred percent of even aged coffee and tea stains.

Multi-purpose, non-corrosive cleaning compositions and methods of use

Compositions comprising an alkanesulfonic acid and an organic nitrogenous base, and related methods of use.

CLEANING COMPOSITION WITH CORROSION INHIBITOR

A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal. 1. A cleaning composition effective to clean a microelectronic device substrate , the cleaning composition comprising:water,base to provide a pH of at least 8,cleaning compound, andcorrosion inhibitor selected from: a guanidine functional compound, a pyrazolone functional compound, and a hydroxyquinoline compound.2. A cleaning composition of claim 1 , wherein the corrosion inhibitor is selected from:a guanidine functional compound selected from dicyandiamide, guanylurea, a guanidine salt, and glycocyamine,a pyrazolone functional compound selected from 2-methyl-3-butyn-2-ol, 3-methyl-2-pyrazolin-5-one, 3-methyl-1-4(sulfophenyl)-2-pyrazolin-5-one, 3-methyl-1-p-tolyl-5-pyrazolone, anda hydroxyquinoline compound selected from: 8-hydroxyquinoline, 8-hydroxyquinoline-2-carboxylic acid, 5-chloro7-iodo-quinolin-8-ol, 5,7-dichloro-2-[(dimethylamino)methyl)quinolin-8-ol, 8-hydroxyquinoline-4-carbaldehyde, 8-hydroxyquinoline-4-carbaldehyde-oxime, 8-hydroxyquinoline-5-sulfonic acid monohydrate3. A cleaning composition of claim 1 , wherein the base is selected from: choline hydroxide claim 1 , tetraethylammonium hydroxide claim 1 , tetramethylammonium hydroxide claim 1 , a quaternary ammonium compound claim 1 , and a combination thereof.4. A cleaning composition of claim 1 , wherein the cleaning compound is an alkanol amine.5. A cleaning composition of claim 1 , wherein the corrosion inhibitor is a guanine.6. A cleaning composition of claim 1 , wherein the corrosion ...

MECHANISM OF UREA/SOLID ACID INTERACTION UNDER STORAGE CONDITIONS AND STORAGE STABLE SOLID COMPOSITIONS COMPRISING UREA AND ACID

Solid rinsing, cleaning and/or sanitizing compositions for various applications are provided. In particular, solid compositions include a complex of urea and an acid having desirable storage stability previously unavailable in solid urea/acid compositions. Stable solid compositions are disclosed and methods of making the same to overcome conventional limitations associated with with forming kinetically and thermodynamically stable solids that utilize urea/acid compositions. 127-. (canceled)29. The composition of claim 28 , wherein the urea is in the form of prilled beads or powder claim 28 , and wherein the acid is a solid or liquid organic acid.30. The composition of claim 28 , wherein at least a portion of the urea is in a complex with a quaternary ammonium compound.31. The composition of claim 28 , wherein the acid is water soluble claim 28 , sparingly water soluble claim 28 , or water insoluble.32. The composition of claim 28 , wherein the acid is citric acid claim 28 , glutamic acid claim 28 , sulfamic acid claim 28 , malic acid claim 28 , maleic acid claim 28 , tartaric acid claim 28 , lactic acid claim 28 , aspartic acid claim 28 , succinic acid claim 28 , adipic acid claim 28 , hydroxyacetic acid claim 28 , formic acid claim 28 , acetic acid claim 28 , propionic acid claim 28 , butyric acid claim 28 , valeric acid claim 28 , caproic acid claim 28 , gluconic acid claim 28 , itaconic acid claim 28 , trichloroacetic acid claim 28 , benzoic acid claim 28 , oxalic acid claim 28 , malonic acid claim 28 , succinic acid claim 28 , glutaric acid claim 28 , maleic acid claim 28 , fumaric acid claim 28 , adipic acid claim 28 , and/or terephthalic acids.33. The composition of claim 28 , wherein the quaternary ammonium compound is selected from the group consisting of monoalkyltrimethyl ammonium salts claim 28 , monoalkyldimethylbenzyl ammonium salts claim 28 , dialkyldimethyl ammonium salts claim 28 , heteroaromatic ammonium salts claim 28 , polysubstituted quaternary ...

Peroxide Contact Lens Care Solution

The invention is directed to a method of cleaning and disinfecting a contact lens. The method includes instructing a consumer to disinfect their contact lens comprising the following steps: remove a contact from an eye and position the lens in a lens assembly that includes a cap member; add a disinfection solution to the lens case such that the lens is submerged in the solution upon closure of the lens case with the cap member. The disinfection solution will comprise 0.5 wt. % to 6 wt. % hydrogen peroxide or a chemical precursor of hydrogen peroxide, and a P-metal modulating compound. The presence of the P-metal modulating compound in the disinfection solution decreases the neutralization rate of the hydrogen peroxide. The disinfection system exhibits a pseudo first-order, half-life of hydrogen peroxide from 12 minutes to 30 minutes over an initial sixty minutes of neutralization following exposure of the disinfection solution to a catalyst comprising a P-metal. This reduction in rate of peroxide neutralization can provide a more effective solution for killing certain microorganisms and fungi. 1. A method of cleaning and disinfecting a contact lens , the method comprising instructing a consumer to disinfect their contact lens comprising the following steps:remove a contact from an eye and position the lens in a lens assembly that includes a cap member;add a disinfection solution to a lens case such that the lens is submerged in the solution upon closure of the lens case with the cap member, said disinfection solution comprising 0.5 wt. % to 6 wt. % hydrogen peroxide or a chemical precursor of hydrogen peroxide, and a P-metal modulating compound, wherein the solution exhibits a pseudo first-order, half-life of hydrogen peroxide from 12 minutes to 30 minutes over an initial sixty minutes of neutralization following exposure of the disinfection solution to a catalyst comprising a P-metal.2. The method of wherein upon closure of the lens case with the cap member the ...

Chemical cleaning of furnaces, heaters and boilers during their operation

This invention relates to cleaning of sediments and fuel remaining and in particular, to cleaning of furnaces, heaters and boilers during their operation. 1): Method of work which includes pneumatic dry spraying of dry powder chemicals onto furnaces , heaters and boilers during their operation , with a benefit of chemical and mechanical cleaning at the same time , with no need to shut down the production process , no water treatment , no scaffolding , and no confined space entry.2): Chemistry (chemicals mixture) of a blend of compounds in different ratios to achieve desired cleaning results and to maximize the cleaning effectiveness according to specific conditions of the furnace , heater or boiler that is been cleaned. The present invention relates to cleaning of sediments and fuel remaining and in particular, to cleaning of furnaces, heaters and boilers during their operation.Furnaces, heaters and boilers can be found in many industries such as oil refineries, petrochemical, chemical, nuclear and geothermal.Furnaces, heaters and boilers are being used for supply of energy. Although their design may vary according to requirements of throughput, thermal conditions, fuel, building materials etc., in most cases there are some common features:There exist a burning of a fuel with air in a combustion chamber; the air is usually supplied by a blower and the fuel enters the burning chamber through a burner. In some cases a number of burners are arranged in a structure. There exist burners mounted from different directions: from top, bottom or of the sides of the combustion chamber.The energy of the combustion is being transferred to a fluid which flows inside enclosed tubes that are installed in the radiant section, (sometimes called “firebox”). There exist various designs of radiant sections where which tubes may be installed in many ways: vertically, horizontally, along the walls, in the middle of the firebox, and etc. After being heated, the fluid typically flows in a ...

Cleaning agent composition and cleaning method

A cleaning agent composition for use in removal of an adhesive residue, the composition containing a quaternary ammonium salt and a solvent, wherein the solvent consists of an organic solvent, and the organic solvent includes an N,N,N′,N′-tetra(hydrocarbyl)urea.

Cleaning formulation for removing residues on surfaces

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) alkanolamine; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

FLUORINATED ACID COMPOUNDS, COMPOSITIONS AND METHODS OF USE

Novel acid-based chemistries that can be used in various cleaning, de-scaling, rust-removal, brightening, etching and other similar applications, including, but not limited to, those based upon hexafluorozirconic acid and other additives, such as urea in some applications, which are effective for a wide range of applications, while avoiding the health, safety and environmental issues that are often associated with the use of hydrochloric acid and other toxic chemistries. 1. An acid-based cleaning composition for descaling and dissolution of complex silicates which does not release hydrofluoric acid comprising a combination of a fluorine containing acid selected from the group consisting of hexafluorophosphoric acid , hexafluorozirconic acid and hexafluorotitanic acid and an acid salt of the fluorine containing acid.2. The acid-based cleaning composition of claim 1 , wherein the acid salt comprises the reaction product of the fluorine containing acid and a weak base selected from the group consisting of urea claim 1 , substituted ureas claim 1 , short chained aliphatic amines claim 1 , short chained olefinic amides claim 1 , aromatic amides claim 1 , pyrolles claim 1 , pyrazoles and indoles. This application claims priority to and incorporates by reference herein in its entirety U.S. Provisional Patent Application Ser. No. 62/428,931, entitled “Fluorinated Acid Compounds, Compositions and Methods of Use,” filed Dec. 1, 2016.The inventions herein described and claimed relate generally to acid-based chemicals and compositions that find primary, but not exclusive, utility in de-scaling, cleaning and brightening applications, and which provide effective products and applications that enhance health and safety, and alleviate the environment issues presented by other chemistries used for similar purposes.Removing unwanted surface contaminants and staining, such as rust or scale, from metal objects is a ubiquitous and at times very vexing problem that plagues a huge array ...

CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition. 2. The composition of claim 1 , wherein the contaminants include abrasive particles claim 1 , organic residue claim 1 , metal ions claim 1 , polishing pad debris claim 1 , CMP-byproducts claim 1 , or any combination thereof.3. The composition of or claim 1 , wherein the weight ratio of the bulky protecting ligand(s) to the organic amine(s) is from about 1:1 to about 10:1.4. The composition of claim 3 , wherein the weight ratio of the bulky protecting ligand(s) to the organic amine(s) is from about 1:1 to about 3:1.5. The composition of claim 3 , wherein the weight ratio of the bulky protecting ligand(s) to the organic amine(s) is about 2.5:1.7. The composition of claim 5 , wherein the bulky protecting ligand is a quaternary ammonium hydroxide comprising ammonium hydroxide claim 5 , tetraalkylammonium hydroxide claim 5 , hydroxyalkylammonium hydroxide claim 5 , trihydroxyalkylammonium hydroxide claim 5 , or any combination thereof.8. The composition of claim 5 , wherein the bulky protecting ligand is tetramethylammonium hydroxide (TMAH) claim 5 , tetraethylammonium hydroxide (TEAM) claim 5 , tetrabutylammonium hydroxide (TBAH) claim 5 , cetyltrimetylammonium hydroxide claim 5 , choline hydroxide claim 5 , trihydroxyethylmethylammonium hydroxide (THEMAH) claim 5 , or any combination thereof.9. The composition of claim 5 , wherein the bulky protecting ligand is trihydroxyethylmethylammonium hydroxide (THEMAH).10. The composition of - claim 5 , wherein the bulky protecting ligand is present in an amount of at least about 3 wt. % based on the total weight of the composition.11. The composition of claim 10 , wherein the bulky protecting ligand is present in an ...

STABILIZATION OF TRIS(2 HYDROXYETHYL)METHYLAMMONIUM HYDROXIDE AGAINST DECOMPOSITION WITH DIALKYHYDROXYLAMINE

The invention provides stabilized solutions useful as raw materials in various applications and methods for stabilizing such aqueous solutions with a stabilizer comprising one or more dialkylhydroxylamines or inorganic or organic acid salts thereof. Stabilized solutions and methods for stabilizing aqueous solutions thereof, include, for example, those of tris(2-hydroxy ethyl)methylammonium hydroxide (THEMAH) and/or carbohydrazide (CHZ). 1. A method for stabilizing an aqueous solution of tris(2-hydroxyethyl)methylammonium hydroxide (THEMAH) comprising adding a stabilizer comprising one or more dialkylhydroxylamines or inorganic or organic acid salts thereof to the aqueous solution of THEMAH.2. The method of claim 1 , wherein the dialkyhydroxylamine is diethylhydroxylamine (DEHA).3. The method of claim 2 , wherein the weight ratio of THEMAH to DEHA is from about 0.5:1 to about 50:1.4. The method of claim 2 , wherein the weight ratio of THEMAH to DEHA is from about 1:1 to about 33:1.5. The method of claim 2 , wherein the weight ratio of THEMAH to DEHA is from about 1.7:1 to about 25:1.6. The method of claim 2 , wherein the weight ratio of THEMAH to DEHA is from about 3:1 to about 10:1.7. The method of claim 1 , wherein the inorganic or organic salts are one or more of nitrate claim 1 , phosphate claim 1 , acetate claim 1 , sulfate claim 1 , hydrochloride claim 1 , lactate claim 1 , and glycolate.8. The method of claim 1 , wherein the amount of THEMAH is from about 0.01 wt. % to about 48 wt. %.9. The method of claim 1 , wherein the amount of DEHA is from about 0.003 wt. % to about 5 wt. %.10. The method of claim 1 , wherein the solution further comprises carbohydrazide (CHZ).11. The method of claim 10 , wherein the amount of CHZ is from about 0.02 wt. % to about 12 wt. %.1214-. (canceled)15. A stabilized tris(2-hydroxyethyl)methylammonium hydroxide (THEMAH) solution comprising:THEMAH;water; andstabilizer comprising one or more dialkylhydroxylamines or inorganic or ...

CHEMICAL CLEANING OF FURNACES, HEATERS AND BOILERS DURING THEIR OPERATION

The present invention comprises a waterless mixture which includes a biuret and/or urea, silica, and melamine particles coated with a layer of magnetite iron oxide for cleaning furnaces, heaters or boilers. A typical cleaning mixture comprises 30-50 percent silica, 20-50 percent biuret and/or urea, 20-40 percent melamine and 1-5 percent iron oxide. The cleaning can be performed at any time. This may lead to a reduction in fuel consumption, less air pollution, increased throughputs, and avoidance of equipment damage. 1. A method of using a waterless mixture for cleaning deposits in furnaces , heaters , or boilers , said method comprising:cleaning deposits in furnaces, heaters, or boilers using a waterless mixture comprising: biuret and/or urea, silica, and melamine particles coated with layer of magnetite iron oxide, wherein the mixture does not contain water.2. The method of comprising cleaning while radiant cell temperature is approximately 900° C.3. The method of comprising spraying said mixture.4. The method of comprising spraying said mixture through flames.5. The method of comprising cleaning inorganic and organic sediments.6. The method of claim 1 , wherein said mixture comprises 30-50% silica claim 1 , 20-50% biuret claim 1 , 20-40% melamine and 1-5% iron oxide.7. The method of claim 1 , wherein the melamine content is 60%.8. The method of claim 1 , wherein the biuret and/or urea content is up to 95%.9. The method of claim 1 , wherein the melamine has a particle size of 0.8-2.5 mm.10. The method of claim 1 , wherein the melamine has a particle size of 1.8-3.4 mm.11. The method of claim 1 , wherein the thickness of magnetite iron oxide coating is 10-100 microns.12. The method of claim 1 , wherein the thickness of magnetite iron oxide coating is up to 80 microns.13. A system for cleaning according to the method of claim 1 , wherein the system comprises a sprayer and a lance connected with said sprayer.14. The system of claim 13 , wherein the lance has a length ...

CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.

CHEMICAL CLEANING OF FURNACES, HEATERS AND BOILERS DURING THEIR OPERATION

The present invention comprises a waterless mixture which includes a biuret and/or urea, silica, and melamine particles coated with a layer of magnetite iron oxide for cleaning furnaces, heaters or boilers. A typical cleaning mixture comprises 30-50 percent silica, 20-50 percent biuret and/or urea, 20-40 percent melamine and 1-5 percent iron oxide. The cleaning can be performed at any time. This may lead to a reduction in fuel consumption, less air pollution, increased throughputs, and avoidance of equipment damage. 1. A system for cleaning deposits in a furnace , heater , or boiler using a waterless mixture , said system comprising:a sprayer to spray cleaning deposits in the furnace, heater, or boiler by contacting said deposits with a waterless mixture comprising: biuret and/or urea, silica, and melamine particles coated with layer of magnetite iron oxide, wherein the mixture does not contain water.2. The system of comprising a lance connected with said sprayer.3. The system of claim 2 , wherein the lance has a length in a range of from approximately 25 centimeters to approximately 2.5 meters.4. The system of claim 2 , wherein the lance has a diameter in a range of from approximately ¼ inches to approximately 1½ inches.5. The system of claim 1 , wherein the sprayer is to clean the furnace while a radiant cell temperature of the furnace is approximately 900° C.6. The system of claim 1 , wherein the sprayer is to contact said deposits with said waterless mixture by spraying said deposits with said waterless mixture.7. The system of claim 1 , wherein the sprayer is to clean deposits by spraying said mixture through flames in the furnace.8. The system of claim 1 , wherein the deposits comprise inorganic and organic sediments.9. The system of claim 1 , wherein said mixture comprises 30-50% silica claim 1 , 20-50% biuret claim 1 , 20-40% melamine and 1-5% magnetite iron oxide by mass.10. The system of claim 1 , wherein the melamine particles in the mixture is present in ...

COMPOSITIONS AND METHODS FOR CLEARING TISSUE

A composition and a method for clearing tissue for subsequent three-dimensional analysis. The clearing composition comprises: (1) a homogenizing agent such as N-methylglucamine, urea, or ethylenediamine; (2) a cytoplasmic, water-soluble refractive index adjusting agent such as iohexol, sodium thiosulfate, or polyethylene glycol; and (3) a membrane, lipid-soluble RI adjusting agent such as 2,2′-thiodiethanol (TDE) or propylene glycol. The tissue clearing composition is particularly suitable for use with long-term fixed human tissues. 1. A tissue clearing composition , comprising a homogenizing agent , a water-soluble adjusting agent , and a lipid-soluble adjusting agent.2. The tissue clearing composition of claim 1 , wherein(a) the homogenizing agent is selected from the group consisting of N-methylglucamine, urea, and ethylenediamine;(b) the water-soluble adjusting agent is selected from the group consisting of iohexol, sodium thiosulfate, and polyethylene glycol; and(c) the lipid-soluble adjusting agent is selected from the group consisting of 2,2′-thiodiethanol and propylene glycol.3. The tissue clearing composition of claim 2 , wherein the homogenizing agent is N-methylglucamine claim 2 , the water-soluble adjusting agent is iohexol claim 2 , and the lipid-soluble adjusting agent is 2 claim 2 ,2′-thiodiethanol.4. The tissue clearing composition of claim 3 , wherein the concentration of each of N-methylglucamine claim 3 , iohexol claim 3 , and 2 claim 3 ,2′-thiodiethanol ranges from 10% to 50%.5. The tissue clearing composition of claim 4 , wherein the concentration of N-methylglucamine is 20% claim 4 , the concentration of iohexol is 32% claim 4 , and the concentration of thiodiethanol is 25%.6. The tissue clearing composition of claim 2 , wherein the homogenizing agent is N-methylglucamine claim 2 , the water-soluble adjusting agent is iohexol claim 2 , and the lipid-soluble adjusting agent is propylene glycol.7. The tissue clearing composition of claim 6 , ...

SEMICONDUCTOR SUBSTRATE TREATMENT LIQUID, TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR-SUBSTRATE PRODUCT USING THESE

Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer. 1. A semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof , the treatment liquid comprising:a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16, andan anticorrosive component which is used to prevent corrosion of the Ge-containing layer.2. The treatment liquid according to claim 1 , wherein the concentration of the anticorrosive component is in a range of 0.01% by mass to 20% by mass.4. The treatment liquid according to claim 3 ,{'sup': 11', '14, 'wherein, in Formula (1), Rto Reach independently represent an alkyl group having 1 to 24 carbon atoms, an alkenyl group having 2 to 24 carbon atoms, or an aryl group having 6 to 14 carbon atoms, and at least one of these has 2 or more carbon atoms;'}{'sup': 21', '22', 'N', 'N', 'N, 'sub': '2', 'in Formula (2), Rand Reach independently represent a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, an aryl group having 6 to 14 carbon atoms, an acyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, an aminocarbonyl group, a hydrazino group, a hydrazinocarbonyl group, or C(NR)NR(Rrepresents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, or an aryl group having 6 to 14 carbon atoms);'}{'sup': 31', '34 ...

Fluorinated acid compounds, compositions and methods of use

Novel acid-based chemistries that can be used in various cleaning, de-scaling, rust-removal, brightening, etching and other similar applications, including, but not limited to, those based upon hexafluorozirconic acid and other additives, such as urea in some applications, which are effective for a wide range of applications, while avoiding the health, safety and environmental issues that are often associated with the use of hydrochloric acid and other toxic chemistries.

AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures. 156.-. (canceled)57. A method of removing metal halide residue , metal oxide residue , or both from a semiconductor wafer , said method comprising cleaning the wafer by contacting same with a cleaning formulation , wherein said cleaning formulation comprises (i) a fluoride source , (ii) at least one organic amine , (iii) a nitrogen-containing carboxylic acid or an imine , (iv) water , and optionally at least one metal chelating agent.58. The method of claim 57 , wherein the nitrogen-containing carboxylic acid or imine is selected from the group consisting of:iminodiacetic acid (IDA),glycine,1,1,3,3-tetramethylguanidine (TMG),{'sub': 3', '2', '2', '2', '3', '2, 'CHC(═NCHCHOH)CHC(O)N(CH),'}{'sub': 3', '2', '2', '2', '2', '2', '3', '2, 'CHC(═NCHCHOCHCHOH)CHC(O)N(CH),'}{'sub': 3', '2', '3, 'CHC(═NH)CHC(O)CH,'}{'sub': 3', '2', '2', '3', '2', '2, '(CHCH)NC(═NH)N(CHCH),'}{'sub': 2', '3', '2, 'HOOCCHN(CH), and'}{'sub': 2', '3', '2, 'HOOCCHN(CH)CHCOOH.'}59. The method of claim 57 , wherein the wafer cleaning composition has a pH greater than 7.60. The method of claim 57 , wherein the amount of nitrogen-containing carboxylic acid or imine is 0.1-40 weight percent claim 57 , based on the total weight of the composition.61. The method of claim 57 , wherein the fluoride source comprises a fluoride species selected from the group consisting of:any combination of ammonia gas or ammonium hydroxide and hydrogen fluoride gas or hydrofluoric acid,ammonium bifluoride,ammonium fluoride,triethanolammonium fluoride (TEAF), ...

FLUORINATED ACID COMPOUNDS, COMPOSITIONS AND METHODS OF USE

Novel acid-based chemistries that can be used in various cleaning, de-scaling, rust-removal, brightening, etching and other similar applications, including, but not limited to, those based upon hexafluorozirconic acid and other additives, such as urea in some applications, which are effective for a wide range of applications, while avoiding the health, safety and environmental issues that are often associated with the use of hydrochloric acid and other toxic chemistries. 1. An acid-based cleaning composition for descaling and dissolution of complex silicates which does not release hydrofluoric acid comprising a combination of a hexafluorozirconic acid and an acid salt of the hexafluorozirconic acid.2. The acid-based cleaning composition of claim 1 , wherein the acid salt comprises the reaction product of the hexafluorozirconic acid and a weak base selected from the group consisting of urea claim 1 , substituted ureas claim 1 , short chained aliphatic amines claim 1 , short chained olefinic amides claim 1 , aromatic amides claim 1 , pyrroles claim 1 , pyrazoles and indoles.3. The acid-based cleaning composition of claim 1 , including a corrosion inhibitor.4. The acid-based cleaning composition of claim 3 , wherein the corrosion inhibitor is selected from the group consisting of sulfonate-based corrosion inhibitors claim 3 , carboxylate-based corrosion inhibitors claim 3 , amine-based corrosion inhibitors claim 3 , amide-based corrosion inhibitors claim 3 , and borated-based corrosion inhibitors.5. The acid-based cleaning composition of claim 4 , wherein the corrosion inhibitor comprises an amine-based corrosion inhibitor.6. The acid-based cleaning composition of claim 1 , further comprising a surfactant.7. An acid-based cleaning composition for descaling and dissolution of complex silicates which does not release hydrofluoric acid comprising a combination of a hexafluorozirconic acid and a corrosion inhibitor.8. The acid-based cleaning composition of claim 7 , ...

Urea gellant

Urea gellants that are suitable for use in liquid compositions. Liquid compositions that include urea gellants. Related processes.

Cleaning formulation for removing residues on surfaces

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Tantalum barrier removal solution

Cleaning formulations

The present invention relates to an aqueous cleaning composition used to remove unwanted organic and inorganic residues and contaminants from semiconductor substrates. The cleaning composition comprises a urea derivative such as, for example, dimethyl urea, as the component that is principally responsible for removing organic residues from the substrate. A fluoride ion source is also included in the cleaning compositions of the present invention and is principally responsible for removing inorganic residues from the substrate. The cleaning compositions of the present invention have a low toxicity and are environmentally acceptable.

Acidic chemistry for post-CMP cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Post clean treatment composition comprising an organic acid and hydroxylamine

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofuctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper surface comprises applying the above composition to the copper surface, and polishing the surface in the presence of the composition.

SOLUTION TO REMOVE A TANTAL BARIER LAYER

Tantalum barrier removal solution

A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tantalum removal agent selected from the group consisting of formamidine, formamidine salts, formamidine derivatives, guanidine derivatives, guanidine salts and mixtures thereof, 0 to 5 abrasive, 0 to 15 total particles selected from the group consisting of polymeric particles and polymer-coated coated particles and balance water. The solution has a tantalum nitride to TEOS selectivity of at least 3 to 1 as measured with a microporous polyurethane polishing pad pressure measure normal to a wafer less than 20.7 kPa.

Tantalum barrier removal solution

A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tantalum removal agent selected from the group consisting of formamidine, formamidine salts, formamidine derivatives, guanidine derivatives, guanidine salts and mixtures thereof, 0 to 5 abrasive, 0 to 15 total particles selected from the group consisting of polymeric particles and polymer-coated coated particles and balance water. The solution has a tantalum nitride to TEOS selectivity of at least 3 to 1 as measured with a microporous polyurethane polishing pad pressure measure normal to a wafer less than 20.7 kPa.

Tantalum barrier removal solution

Tantalum barrier removal solution

tantalum barrier removal solution

본 발명은 탄탈 배리어물의 제거에 유용한 화학 기계적 평탄화 용액에 관한 것이다. 당해 용액은 산화제 0 내지 25중량%, 비철 금속용 억제제 0 내지 15중량%, 비철 금속용 착화제 0 내지 20중량%, 포름아미딘, 포름아미딘 염, 포름아미딘 유도체, 구아니딘 유도체, 구아니딘 염 및 이들의 혼합물로 이루어진 그룹으로부터 선택된 탄탈 제거제 0.01 내지 12중량%, 연마제 0 내지 5중량%, 중합체성 입자 및 중합체 피복된 피복 입자로 이루어진 그룹으로부터 선택된 입자 총 0 내지 15중량% 및 잔여량의 물을 포함한다. 용액은 질화탄탈 대 TEOS 선택비가 웨이퍼에 대해 수직 방향으로 측정한 20.7kPa 미만의 미공성 폴리우레탄 연마 패드 압력으로 측정하여 3 대 1 이상이다. The present invention relates to chemical mechanical planarization solutions useful for the removal of tantalum barriers. The solution is 0 to 25% by weight of oxidizing agent, 0 to 15% by weight of inhibitor for nonferrous metals, 0 to 20% by weight of complexing agent for nonferrous metals, formamidine, formamidine salt, formamidine derivatives, guanidine derivatives, guanidine salts And 0.01 to 12% by weight of a tantalum remover selected from the group consisting of mixtures thereof, 0 to 5% by weight of abrasives, 0 to 15% by weight of particles selected from the group consisting of polymeric particles and polymer coated coated particles and a residual amount of water. Include. The solution is at least 3 to 1 as measured by a microporous polyurethane polishing pad pressure of less than 20.7 kPa measured tantalum nitride to TEOS selectivity perpendicular to the wafer.

钽阻挡层去除溶液

用于去除钽阻挡层材料的化学机械平坦化溶液。该溶液包含0至25重量百分比的氧化剂，0至15重量百分比的非铁金属金属抑制剂和0至20重量百分比该非铁金属的配位剂，0.01至12重量百分比选自甲脒，甲脒盐，甲脒衍生物，胍衍生物，胍盐和它们的混合物的钽去除剂，0至5重量百分比的研磨剂，0至15重量百分比选自聚合物颗粒和聚合物包覆颗粒的全部颗粒，而余量为水。该溶液具有至少3比1的氮化钽相对TEOS的选择性，如使用垂直于晶片的小于20.7kPa的微孔聚氨酯抛光垫板压力所测。

Tantalum barrier removal solution

Tantalum barrier removal solution

Composition for removal of residue comprising cationic salts and methods using same

The present invention relates to an aqueous cleaning composition used to remove unwanted organic and inorganic residues and contaminants from a substrate such as, for example, a semiconductor substrate. The cleaning composition comprises from about 0.01% to about 40% by weight of a salt selected from a guanidinium salt, an acetamidinium salt, a formamidinium salt, and mixtures thereof; water; and optionally a water soluble organic solvent. Compositions according to the present invention are free of an oxidizer and abrasive particles and are capable of removing residues from a substrate and, particularly, a substrate having silicon-containing BARC and/or photoresist residue.

一种清洗液及其应用

本发明公开了一种清洗液，其含有至少一种氧化剂，至少一种胍类化合物和水。本发明还公开了其在化学机械抛光后晶片清洗中的应用。本发明的清洗液可以较好地清洗化学机械抛光后晶片表面残留的研磨颗粒和化学物质，且金属离子含量低，无气味，可减少金属离子污染和环境污染。

Tantalum barrier removal solution

본 발명은 탄탈 배리어물의 제거에 유용한 화학 기계적 평탄화 용액에 관한 것이다. 당해 용액은 산화제 0 내지 25중량%, 비철 금속용 억제제 0 내지 15중량%, 비철 금속용 착화제 0 내지 20중량%, 포름아미딘, 포름아미딘 염, 포름아미딘 유도체, 구아니딘 유도체, 구아니딘 염 및 이들의 혼합물로 이루어진 그룹으로부터 선택된 탄탈 제거제 0.01 내지 12중량%, 연마제 0 내지 5중량%, 중합체성 입자 및 중합체 피복된 피복 입자로 이루어진 그룹으로부터 선택된 입자 총 0 내지 15중량% 및 잔여량의 물을 포함한다. 용액은 질화탄탈 대 TEOS 선택비가 웨이퍼에 대해 수직 방향으로 측정한 20.7kPa 미만의 미공성 폴리우레탄 연마 패드 압력으로 측정하여 3 대 1 이상이다. The present invention relates to chemical mechanical planarization solutions useful for the removal of tantalum barriers. The solution is 0 to 25% by weight of oxidizing agent, 0 to 15% by weight of inhibitor for nonferrous metals, 0 to 20% by weight of complexing agent for nonferrous metals, formamidine, formamidine salt, formamidine derivatives, guanidine derivatives, guanidine salts And 0.01 to 12% by weight of a tantalum remover selected from the group consisting of mixtures thereof, 0 to 5% by weight of abrasives, 0 to 15% by weight of particles selected from the group consisting of polymeric particles and polymer coated coated particles and a residual amount of water. Include. The solution is at least 3 to 1 as measured by a microporous polyurethane polishing pad pressure of less than 20.7 kPa measured tantalum nitride to TEOS selectivity perpendicular to the wafer. 탄탈 배리어물, 화학 기계적 평탄화 용액, 산화제, 억제제, 착화제, 탄탈 제거제. Tantalum barriers, chemical mechanical planarization solutions, oxidizing agents, inhibitors, complexing agents, tantalum removers.

Tantalum barrier removal solution

A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tantalum removal agent selected from the group consisting of formamidine, formamidine salts, formamidine derivatives, guanidine derivatives, guanidine salts and mixtures thereof, 0 to 5 abrasive, 0 to 15 total particles selected from the group consisting of polymeric particles and polymer-coated coated particles and balance water. The solution has a tantalum nitride to TEOS selectivity of at least 3 to 1 as measured with a microporous polyurethane polishing pad pressure measure normal to a wafer less than 20.7 kPa.

Tantalum barrier removal solution

タンタルバリア除去溶液

ケミカルメカニカルプラナリゼーション溶液は、タンタルバリア材料を除去するために有用である。溶液は、酸化剤を０〜２５重量％、非鉄金属のためのインヒビターを０〜１５重量％、非鉄金属のための錯化剤を０〜２０重量％、ホルムアミジン、ホルムアミジン塩、ホルムアミジン誘導体、グアニジン誘導体、グアニジン塩、およびこれらの混合物よりなる群から選ばれるタンタル除去剤を０．０１〜１２重量％、砥粒を０〜５重量％、ポリマー粒子およびポリマーコートされた被覆粒子よりなる群から選ばれる粒子を全部で０〜１５重量％、および残余の水を含む。溶液は、ウェーハに対する垂直方向の微細多孔性ポリウレタン研磨パッド圧力が２０．７kPa未満で測定したとき、少なくとも３：１の窒化タンタル：ＴＥＯＳ選択比を有する。

Tantalum barrier removal solution

A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tantalum removal agent selected from the group consisting of formamidine, formamidine salts, formamidine derivatives, guanidine derivatives, guanidine salts and mixtures thereof, 0 to 5 abrasive, 0 to 15 total particles selected from the group consisting of polymeric particles and polymer-coated coated particles and balance water. The solution has a tantalum nitride to TEOS selectivity of at least 3 to 1 as measured with a microporous polyurethane polishing pad pressure measure normal to a wafer less than 20.7 kPa.

钽阻挡层去除溶液

用于去除钽阻挡层材料的化学机械平坦化溶液。该溶液包含0至25重量百分比的氧化剂，0至15重量百分比的非铁金属金属抑制剂和0至20重量百分比该非铁金属的配位剂，0.01至12重量百分比选自甲脒，甲脒盐，甲脒衍生物，胍衍生物，胍盐和它们的混合物的钽去除剂，0至5重量百分比的研磨剂，0至15重量百分比选自聚合物颗粒和聚合物包覆颗粒的全部颗粒，而余量为水。该溶液具有至少3比1的氮化钽相对TEOS的选择性，如使用垂直于晶片的小于20.7kPa的微孔聚氨酯抛光垫板压力所测。

Alkaline chemistry for post-CMP cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.

Acidic chemistry for Post-CMP cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Acidic chemistry for Post-CMP cleaning using a composition comprising mercaptopropionic acid

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Cleaning composition following cmp and methods related thereto

본 발명은 화학-기계적 연마 후 반도체 웨이퍼로부터 오염물을 세정하기 위한 조성물을 제공한다. 상기 세정 조성물은 거대 보호 리간드, 유기 아민, 유기 억제제, 및 물을 함유한다. 본 발명은 또한 상기 세정 조성물의 사용 방법을 제공한다. The present invention provides a composition for cleaning contaminants from semiconductor wafers after chemical-mechanical polishing. The cleaning composition contains a large protective ligand, an organic amine, an organic inhibitor, and water. The present invention also provides a method of using the cleaning composition.

半導体基板洗浄剤及び洗浄方法

Composition comprising chelating agents containing amidoxime compounds

The present invention is a novel aqueous cleaning solution for use in semiconductor front end of the line (FEOL) manufacturing process wherein the cleaning solution comprises at least one amidoxime compound.

Post clean treatment

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper surface comprises applying the above composition to the copper surface, and polishing the surface in the presence of the composition.

Cleaning compositions for removing etching residue and method of using

A stripping and cleaning composition for removing resists and etching residue from substrates containing hydroxylamine and at least one alkanolamine is described. Further, a cleaning composition for removing etching residue from semiconductor substrates containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition.

Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials

A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

Alkanolamine semiconductor process residue removal composition and process

A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the two carbon atom linkage alkanolamine compound in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

Hydroxylamine-gallic compound composition and process

A hydroxylamine-gallic compound composition comprises a hydroxylamine compound, at least one alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound. A process for removing photoresist or other polymeric material or a residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, in accordance with this invention comprises contacting the substrate with a hydroxylamine compound, an alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound for a time and at a temperature sufficient to remove the photoresist, other polymeric material or residue from the substrate. Use of a gallic compound in place of catechol in the composition and process reduces attack on titanium metallurgy by, e.g., about three times.

Ethylenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal process

An ethylenediaminetetraacetic acid or a mono-, di-, tri- or tetraammonium salt thereof residue cleaning composition removes photoresist and other residue from integrated circuit substrates. The balance of the composition is desirably made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the ethylenediaminetetraacetic acid or a mono-, di-, tri- or tetraammonium salt thereof in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

Cleaning compositions for removing etching residue and method of using

An etching residue remover for cleaning etching residue from a substrate, derived from a mixture of at least hydroxylamine, an alkanolamine which is miscible with said hydroxylamine, water, and, optionally, a chelating agent, wherein the hydroxylamine and the alkanolamine are present in amounts sufficient to clean etching residue from the substrate.

Method for removing etching residue using a hydroxylamine-containing composition

A method for removing resists and etching residue from substrates using a stripping and cleaning composition containing hydroxylamine and at least one alkanolamine is described. Further, a method for removing etching residue from semiconductor substrates using a cleaning composition containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition of the method.

Cleaning compositions for removing etching residue with hydroxylamine, alkanolamine, and chelating agent

A stripping and cleaning composition for removing resists and etching residue from substrates containing hydroxylamine and at least one alkanolamine is described. Further, a cleaning composition for removing etching residue from semiconductor substrates containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition.

Cleaning compositions for removing etching residue and method of using

A stripping and cleaning composition for removing resists and etching residue from substrates containing hydroxylamine and at least one alkanolamine is described. Further, a cleaning composition for removing etching residue from semiconductor substrates containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition.

Hydroxylamine-gallic compound composition and process

A hydroxylamine-gallic compound composition comprises a hydroxylamine compound, at least one alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound. A process for removing photoresist or other polymeric material or a residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, in accordance with this invention comprises contacting the substrate with a hydroxylamine compound, an alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound for a time and at a temperature sufficient to remove the photoresist, other polymeric material or residue from the substrate. Use of a gallic compound in place of catechol in the composition and process reduces attack on titanium metallurgy by, e.g., about three times.

Process using hydroxylamine-gallic acid composition

A hydroxylamine-gallic compound composition comprises a hydroxylamine compound, at least one alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound. A process for removing photoresist or other polymeric material or a residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, in accordance with this invention comprises contacting the substrate with a hydroxylamine compound, an alcohol amine compound which is miscible with the hydroxylamine compound and a gallic compound for a time and at a temperature sufficient to remove the photoresist, other polymeric material or residue from the substrate. Use of a gallic compound in place of catechol in the composition and process reduces attack on titanium metallurgy by, e.g., about three times.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures

A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Post clean treatment

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper or aluminum surface comprises applying the above composition to the copper or aluminum surface, and polishing the surface in the presence of the composition.

Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer

A semiconductor wafer cleaning formulation for use in semiconductor fabrication comprising maleic acid and ethylene urea as essential components. The preferred formulation comprises maleic acid, ethylene urea, at least one carboxylic acid except maleic acid, at least one organic amine except ethylene urea and water The formulation can optionally comprise at least one selected from the group consisting of an organic solvent, a chelating agent and a surfactant. The formulation is suitably used for removal of residue from semiconductor wafers following a resist ashing process, particularly for removal of residue from wafers containing delicate copper interconnect and low-k or ultra low-k interlayer dielectrics structures. There is also provided a method for cleaning the wafer by using the formulation.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer

A semiconductor wafer cleaning formulation for use in semiconductor fabrication comprising maleic acid and ethylene urea as essential components. The preferred formulation comprises maleic acid, ethylene urea, at least one carboxylic acid except maleic acid, at least one organic amine except ethylene urea and water. The formulation can optionally comprise at least one selected from the group consisting of an organic solvent, a chelating agent and a surfactant. The formulation is suitably used for removal of residue from semiconductor wafers following a resist ashing process, particularly for removal of residue from wafers containing delicate copper interconnect and low-k or ultra low-k interlayer dielectrics structures. There is also provided a method for cleaning the wafer by using the formulation.

一种不含季铵碱的清洗液

本发明涉及一种不含季铵碱的清洗液，所述清洗液按照以下质量百分比的原料制成：胍或胍的衍生物的质量百分比1～20％，链烷醇胺的质量百分比1～20％，含氮的杂环的化合物金属腐蚀阻止剂的质量百分比0.01～10％，水的浓度为质量百分比60～99％。本发明中的清洗液不含季铵碱和易分解的抗氧化剂类金属阻止剂，并且有较好的环境稳定性，具有高效的铜表面有机残留物和研磨粒子去除能力，具有较低的铜的腐蚀速率和铜的表面粗糙度，还不会对铜表面产生吸附。

Alkaline chemistry for post-CMP cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.

Improved acidic chemistry for post-cmp cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Improved alkaline chemistry for post-cmp cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.

Improved alkaline chemistry for post-cmp cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.

Post-CMP cleaning composition and related methods

Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials

Post clean treatment

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper surface comprises applying the above composition to the copper surface, and polishing the surface in the presence of the composition.

Acidic chemistry for post-CMP cleaning

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Cleaning composition following cmp and methods related thereto

Stripping composition for thermoset resins and method of repairing electrical apparatus

A stripper composition for thermoset resins is disclosed which comprises about 1 to about 99% of an aromatic compound which has a boiling point over 180° C. and is a phenol or a primary or secondary amine, and about 1 to about 99% of a carboxylic acid compound which has a boiling point over 180° C. and is a rosin acid or a mono- or di-carboxylic fatty acid or an ester thereof. The composition also preferably includes sufficient hydrogen bonding compound to react with any acid present in the composition plus about 20 to about 50% in excess of that amount. A swelling agent is also preferably included.

Stripping compositions comprising hydroxylamine and alkanolamine

A stripping composition for removing resists from substrates containing hydroxylamine and at least one alkanolamine is described. Optionally, one or more polar solvents can also be included in the stripping composition. The stripping composition is especially suitable for removing a photoresist from a substrate during the manufacture of semiconductor integrated circuits and for removing cured polymer coatings, such as polyimide coatings.

Method of stripping resists from substrates using hydroxylamine and alkanolamine

A stripping composition for removing resists from substrates containing hydroxylamine and at least one alkanolamine is described. Optionally, one or more polar solvents can also be included in the stripping composition. The stripping composition is especially suitable for removing a photoresist from a substrate during the manufacture of semiconductor integrated circuits and for removing cured polymer coatings, such as polyimide coatings.

Method of removing etching residue

A (method using a composition) for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

一种化学机械抛光清洗液及其使用方法

本发明公开了一种化学机械抛光清洗液及其使用方法，该清洗液包含两种C原子数不同的有机碱、分散助剂、余量为水。本发明的化学机械抛光清洗液是一种用于硅晶圆片抛光垫的清洗液，通过对化学机械抛光后抛光垫的清洗，能够改善抛光后硅晶圆片的表面质量，延长抛光垫的使用时间，降低成本。

Composition for removing photoresist, method of preparing the composition, method of removing photoresist and method of manufacturing a semiconductor device using the same

포토레지스트 및 식각 잔류물을 효과적으로 제거할 수 있는 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한 포토레지스트 제거 방법 및 반도체 장치 제조방법에서, 상기 포토레지스트 제거용 조성물은 하기 구조식을 갖는 알콜아미드계 화합물 5 내지 20중량%, 극성 비양자성 용매 15 내지 60중량%, 첨가제 0.1 내지 6중량% 및 여분의 물을 포함한다. 포토레지스트 및 미세 식각 잔류물을 효과적으로 제거할 수 있을 뿐만 아니라 포토레지스트 제거시 노출된 금속배선의 손상을 최소화할 수 있다. In the photoresist removing composition that can effectively remove the photoresist and etching residues, a method for manufacturing the same, a photoresist removing method and a semiconductor device manufacturing method using the same, the photoresist removing composition is an alcoholamide compound having the following structural formula 5 to 20% by weight, 15 to 60% by weight polar aprotic solvent, 0.1 to 6% by weight additive and excess water. Not only can the photoresist and fine etch residues be effectively removed, but damage to the exposed metallization during photoresist removal can be minimized. ------(구조식) ------(constitutional formula) (식중, R1은 수산기 또는 하이드록시 알킬기이고, R2는 수소 또는 하이드록시 알킬기이다) (Wherein R 1 is a hydroxyl group or a hydroxy alkyl group, and R 2 is a hydrogen or a hydroxy alkyl group)

用于去除表面上的残余物的清洗调配物

本发明公开了一种用于去除表面上的残余物的清洗调配物，所述清洁组合物由以下组成：1)至少一种氧化还原剂；2)至少一种第一螯合剂，所述第一螯合剂是多氨基多羧酸；3)至少一种金属腐蚀抑制剂，所述金属腐蚀抑制剂为经取代或未经取代的苯并三唑；4)至少一种有机溶剂，所述有机溶剂选自水溶性醇、水溶性酮、水溶性酯和水溶性醚；5)水；和6)任选地，至少一种pH调节剂，所述pH调节剂是不含金属离子的碱。

除残留物的含有阳离子盐的组合物及其使用方法

本发明涉及一种含水的清洗用组合物，其用于从基底上，例如，半导体基底上除去不需要的有机和无机残留物和污染物。该清洗用组合物包括按重量计约0.01％至约40％的选自胍盐、乙脒盐、甲脒盐和其混合物的盐；水；和任选的可溶性有机溶剂。根据本发明的组合物不含有氧化剂和磨粒，并且可以从基底，尤其是从具有含硅BARC和/或光刻胶残留物的基底上除去残留物。

세정제 조성물 및 세정 방법

본 발명은, 접착제 잔류물을 제거하기 위해 이용되는 세정제 조성물로서, 제 4 급 암모늄염과, 용매를 포함하고, 상기 용매가, 유기 용매만으로 이루어지며, 상기 유기 용매가, N,N,N',N'-테트라(탄화수소)우레아를 포함한다.

半导体基板的处理液、处理方法、使用这些的半导体基板产品的制造方法

一种半导体基板的处理液，其是自具有含有锗(Ge)的含Ge层的半导体基板将所述半导体基板上侧的有机物去除、或者对其表面进行清洗的处理液，其中，包含使处理液成为pH5～16的范围的药液成分、及用于对含Ge层进行防蚀的防蚀成分。

Semiconductor substrate treatment liquid, treatment method, and manufacturing method of semiconductor substrate product using these

저마늄(Ge)을 포함하는 Ge 함유층을 갖는 반도체 기판으로부터 상기 반도체 기판 상측의 유기물을 제거하거나, 혹은 그 표면을 세정하는 처리액으로서, 처리액을 pH5~16의 범위로 하는 약액 성분과, Ge 함유층을 방식하기 위한 방식 성분을 포함하는 반도체 기판의 처리액이다. Claims 1. A treatment liquid for removing an organic matter on the semiconductor substrate from a semiconductor substrate having a Ge-containing layer containing germanium (Ge) or for cleaning the surface thereof, Containing layer is a treatment liquid for a semiconductor substrate.

Semiconductor wafer cleaning agent and cleaning method

본 발명은 비공유 전자쌍을 갖는 질소 원자를 분자 중에 지니는 화합물을 포함하여 이루어지는, 표면에 구리 배선이 형성된 반도체 표면용 세정제 및 그 세정제로, 표면에 Cu 배선이 형성된 반도체 표면을 처리하는 것을 특징으로 하는 반도체 표면의 세정 방법을 개시한다. The present invention is a semiconductor surface cleaning agent having a copper wiring formed on its surface, comprising a compound having a nitrogen atom having a lone pair of electrons in its molecule, and a cleaning agent for treating the semiconductor surface having Cu wiring formed on the surface thereof. Disclosed is a method for cleaning a surface. 본 발명에 따른 세정제는 표면에 Cu 배선이 형성된 반도체에 있어서의, Cu 배선(Cu 박막), 층간 절연막인 SiO 2 를 부식시키지 않고, 나아가서는 표면의 평탄도를 손상시키지 않고서, Cu-CMP 공정에서 부착된 반도체 표면의 CuO 및 파티클을 제거하는 데에 유효하다. In the Cu-CMP process, the cleaning agent according to the present invention does not corrode Cu wiring (Cu thin film), SiO 2 which is an interlayer insulating film, and further impairs the flatness of the surface in a semiconductor in which Cu wiring is formed on the surface. It is effective for removing CuO and particles on the adhered semiconductor surface.

Process solution for polymer processing

본 발명은 극성 비양자성 용매, 불소계 화합물 및 함황화합물을 포함하는, 고분자 처리용 공정액에 관한 것으로서, 보관안정성이 우수하며, 반도체 웨이퍼 회로면에 잔존하는 접착 폴리머에 대한 제거력을 향상시키면서도 금속층의 데미지를 최소화할 수 있다.

Composition for removing photoresist, method for producing composition for removing photoresist, method for removing photoresist using composition for removing photoresist, and method for producing semiconductor device

Cleaning solution for plasma etching residues

本发明公开了一种清洗液，包含：(a)至少一种氟化物；(b)至少一种胍类；(c)至少一种溶剂；(d)水。本发明的清洗液清洗能力强，能同时对金属线、通道、金属垫晶圆清洗；能同时控制金属和非金属的腐蚀速率，金属和非金属的腐蚀速率随使用寿命的延长而保持稳定，并具有较大的操作窗口；能同时适用于批量浸泡式、批量旋转喷雾式、单片旋转式的清洗液组合物。

A solid windshield washer composition and the use thereof

The present invention relates to a solid windshield washer composition comprising a first compound, wherein said solid windshield washer composion when dissolved in a liquid is freeze resistant at minus 10°C and below.

Composition for removal of residue comprising cationic salts and methods using same

本发明涉及一种含水的清洗用组合物，其用于从基底上，例如，半导体基底上除去不需要的有机和无机残留物和污染物。该清洗用组合物包括按重量计约0.01％至约40％的选自胍盐、乙脒盐、甲脒盐和其混合物的盐；水；和任选的可溶性有机溶剂。根据本发明的组合物不含有氧化剂和磨粒，并且可以从基底，尤其是从具有含硅BARC和/或光刻胶残留物的基底上除去残留物。

Dense utensil washing composition and method

本发明总体涉及浓的器皿洗涤组合物及其使用方法。在一些方面，本发明在器皿洗涤方法中使用浓的组合物，这里该浓液直接施用到待清洁的制品上，而非分散到水仓中和作为待用组合物施用到制品上。另外的方面，该方法以碱‑酸‑碱或者酸‑碱‑酸等交替的形式使用高度浓的碱和/或酸组合物，提供了基本类似或者更优的清洁功效，同时降低了碱和/或酸组合物的整体消耗。

manufacturing method of bleaching gel for cultural pottery

본 발명은 도자기 문화재 표면 오염물 표백 겔 및 그 제조 방법에 관한 것이다. 본 발명의 도자기 문화재 표면 오염물 표백 겔 및 그 제조 방법은, 도자기 문화재 표면 오염물 표백 겔에 있어서, 과산화요소 100 중량부와; 상기 과산화요소 100 중량부 대비 10 중량부의 카보폴 934와; 상기 과산화요소 100 중량부 대비 8 ~ 16 중량부의 메타규산나트륨과; 상기 과산화요소 100 중량부 대비 800 ~ 1,200 중량부의 증류수;를 포함하여 구성된다. 본 발명에 의해, 표백 성능이 우수하면서도 표백 처리 작업이 용이한 표백 겔이 제공된다. 구체적으로, 도자기 표면에서 흘러내리는 현상을 억제하기 위해 통상의 중화제인 트리에탄올아민 대신 강알칼리성의 메타규산나트륨을 첨가함으로써 pH 조절이 용이하고, 점도 조절 안정성이 높고, 휘발성 암모니아 냄새가 나지 않게 된다. The present invention relates to a bleaching gel for surface contaminants of ceramic cultural properties and a method for manufacturing the same. According to the present invention, there is provided a ceramic cultural property surface stain bleaching gel and a method for manufacturing the same, comprising: 100 parts by weight of urea peroxide; Carbopol 934 in 10 parts by weight based on 100 parts by weight of the urea peroxide; 8 to 16 parts by weight of sodium metasilicate based on 100 parts by weight of the urea peroxide; It is configured to include; 800 to 1,200 parts by weight of distilled water based on 100 parts by weight of the urea peroxide. Advantageous Effects of Invention According to the present invention, there is provided a bleaching gel having excellent bleaching performance and easy bleaching treatment operation. Specifically, by adding strong alkaline sodium metasilicate instead of triethanolamine, which is a common neutralizing agent, in order to suppress the flow from the surface of the ceramics, pH control is easy, viscosity control stability is high, and the smell of volatile ammonia is eliminated.