An electron beam evaporator

Aufdampfeinrichtung.

Device of deposit by vaporization

Method and apparatuses for in situ monitoring of the thickness of ultrathin films deposited by ion sputtering

Method for in situ monitoring of the thickness of ultrathin films deposited by ion sputtering of the type according to which a target of a particular material is bombarded by a positive ion stream, the atoms ejected from the said target being sprayed onto the substrate to be coated, characterised in that it consists essentially in measuring and integrating, in real time, a physical parameter representing the flux of atoms sprayed onto the substrate, and in using the result of this integration for monitoring the thickness of the deposition and for automatic control of the end of the process or of the changing of the target, in the case of the production of multiple layers. The invention also covers apparatuses essentially comprising means for measuring and integrating the ion current.

유기 박막 제조 장치, 유기 박막 제조 방법

... 안정적으로 증기를 방출할 수 있는 유기 박막 제조 장치를 제공한다. 증발 용기(33)에 열을 공급하여 유기 재료(37)를 가열하여 증기를 방출시키는 유기 박막 제조 장치(10)로서, 성막 대상물(15)에 형성되는 유기 박막의 성장 속도로부터 유기 재료(37)의 온도를 나타내는 산출 온도를 구하고, 증발 용기(33)의 측정 온도와 산출 온도를 비교하여, 증발 용기(33)에 공급하는 열의 공급 속도를 온도 편차에 따라 변화시킨다. 열의 변동이 작기 때문에 증기 방출이 안정된다. 측정 성장 속도가 목표 성장 속도에 가까워지면 열량의 변화를 작게 하기 때문에 증기 방출이 안정된다.

SYSTEM AND METHOD RELATING TO VAPOR DEPOSITION

A method and system for producing a film (preferably a thin film with highly uniform or highly accurate custom graded thickness) on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source operated with time-varying flux distribution. In preferred embodiments, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. A user selects a source flux modulation recipe for achieving a predetermined desired thickness profile of the deposited film. The method relies on precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.

Molecular beam epitaxy effusion cell

A temperature controlled source cell for use in the practice of thin film depositions by molecular beam epitaxy is described which includes an optical sensor for monitoring source temperature, the sensor including a light pipe having one end near the source and the other end coupled to a fiber optic probe which carries light from the light pipe to a remote optical detector.

APPARATUS FOR FABRICATING A SEMICONDUCTOR DEVICE WITH TARGET SPUTTERING AND TARGET SPUTTERING METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE

The present disclosure provides an apparatus for fabricating a semiconductor device with target sputtering, including a chamber for accommodating a consumable target, a target accumulative consumption counter, wherein the target accumulative consumption counter provides a signal correlated to an amount of the consumable target being consumed, and a power supply communicates with the consumable target counter, wherein the power supply provides a power output according to the signal.

SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY TANGIBLE MEDIUM

Some embodiments of the present disclosure provide a technique for improving film thickness uniformity on a surface of a substrate and between substrates. According to one or more embodiments, a technique is provided that includes: a vaporizer configured to generate a source gas by vaporizing a liquid source; a tank in which the source gas ejected from the vaporizer is stored; a flow controller provided at a pipe connecting the vaporizer with the tank; a first valve provided at the pipe; a second valve provided downstream of the tank; a process chamber downstream of the second valve and to which the source gas is supplied; and a controller configured to be capable of controlling the first valve and the second valve to alternately and repeatedly perform accumulation of the source gas from the vaporizer into the tank and release of the source gas from the tank to the process chamber.

Evaporation system with measurement unit

An evaporator for evaporating a material onto a substrate is described. The evaporator includes a guiding means for guiding the material towards at least one opening nozzle. The guiding means includes a measurement outlet for a portion of the material. The evaporator further includes a first measurement system configured for generating a first signal correlated with a deposition rate of the evaporator and having a first detector positioned for being coated by the material and a second optical measurement system for generating a second signal correlated with the deposition rate of the evaporator and wherein the second signal is based on the portion of the material of the measurement outlet.

VAPORIZATION APPARATUS AND METHOD FOR CONTROLLING THE SAME

A method and devices for the formation of deposits by evaporation

... 738,592. Coating by vapour deposition. SUDDEUTSCHE LABORATORIEN GES. Nov. 5, 1952 [Nov. 5, 1951], No, 27907/52. Class 82 (2). [Also in Group XL (b)] Apparatus for producing layers of deposited metal by vaporization by directing an electron or ion beam on to a metal rod comprises means for measuring and controlling automatically or manually the rate of vaporization and the thickness of the layer by measuring the light or heat radiation from the heated rod, and the opacity of an initially transparent disc in the vaporization chamber. As shown, a batch of glass lenses 32 are coated with a layer of metal by vaporization of a metal rod 18 by bombardment with an electron beam 4 produced by a heated cathode 34 and a charged Wehnelt cylinder 1 connected to a funnelshaped member 30. The beam passes through an apertured diaphragm 2, and is focused on the end face 39 of the rod 18 by an electromagnetic or, as shown, an electrostatic lens system 3 comprising electrodes 27, 28, 29. The apparatus is ...

VACUUM VAPOR DEPOSITION WITH CONTROL OF ELEVATION OF METAL MELT

VACUUM VAPOR DEPOSITION METHOD

Source and glass deposition apparatus with the same

Processing apparatus for smoothing film material and evaporation deposition device with same

Film deposition apparatus and film deposition method

A film deposition apparatus comprises: a vacuum chamber; a cylindrical target, a circumferential surface of the target being opposite to a substrate, and the target being disposed in the vacuum chamber so as to intersect a conveyance direction of the substrate; a driving unit configured to rotatively drive the target; a magnetic field creator disposed inside the target; a reactive gas flow unit configured to flow a reactive gas, the reactive gas flow unit being disposed in the vicinity of the target; an optical emission monitor configured to monitor an optical emission intensity of plasma at a location between the substrate and the target and in the vicinity of the target; and a controlling unit configured to control a rotation speed of the target driven by the driving unit, such that the optical emission intensity monitored by the optical emission monitor approaches a preset target optical emission intensity.

APPARATUS FOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporate ...

Thermal evaporation sources for wide-area deposition

A thermal evaporation sources are described. These thermal evaporation sources include a crucible configured to contain a volume of evaporant and a vapor space above the evaporant.

Verfahren zur Abscheidung von CIS-, CIGS- oder CIGSSe-Schichten und Verwendung eines Drahtes zur Herstellung dieser Schichten

Verfahren zum Abscheiden von CIS-, CIGS- oder CIGSSe- Schichten auf einem Substrat mittels zumindest eines beheizbaren Verdampferschiffchens (22, 9, 9', 10, 10'), wobei eine Zuführung von Draht (28) aus verdampfbarem Material zu dem mindestens einen Verdampferschiffchen (22, 9, 9', 10, 10') zum Verdampfen erfolgt, dadurch gekennzeichnet, dass der Draht (28) mehrere schichtbildende Bestandteile aufweist und das Material der Bestandteile des Drahtes (28) ausgewählt wird aus einer Menge, die die Mitglieder der Gruppe Cu, In, Ga, S, Se umfasst und dass die verdampften Bestandteile des Drahtes (28) auf dem Substrat abgeschieden werden.

Control of conductive material evapn.

In a process for controlling evapn. of one or more conductive materials from one or more parallel-connected resistive evaporators, the novelty is that (a) the current (I), voltage (U) and/or power consumption (P) are continuously measured at least after the start of evapn.; (b) a rate of change (W), corresponding to dI/dt, dU/dt, dR/dt or dP/dt, is determined; and (c) evapn. is terminated by switching off the evaporator current source when the change rate (W) drops below a preset threshold value.

Quelle zur thermischen PVD-Beschichtung für organische elektrolumineszente Schichten

PROCEDE ET APPAREILS POUR LE CONTROLE IN SITU DE L'EPAISSEUR DE COUCHES ULTRAMINCES DEPOSEES PAR PULVERISATION IONIQUE

PROCEDE POUR LE CONTROLE IN SITU DE L'EPAISSEUR DE COUCHES ULTRAMINCES DEPOSEES PAR PULVERISATION IONIQUE DU TYPE SELON LEQUEL UNE CIBLE D'UN MATERIAU DETERMINE EST BOMBARDEE PAR UN FLUX D'IONS POSITIFS, LES ATOMES EJECTES DE LADITE CIBLE ETANT PROJETES SUR LE SUBSTRAT A REVETIR, CARACTERISE EN CE QU'IL CONSISTE ESSENTIELLEMENT A MESURER ET A INTEGRER EN TEMPS REEL UN PARAMETRE PHYSIQUE REPRESENTATIF DU FLUX D'ATOMES PULVERISES SUR LE SUBSTRAT, ET A UTILISER LE RESULTAT DE CETTE INTEGRATION POUR LE CONTROLE DE L'EPAISSEUR DU DEPOT ET POUR UNE COMMANDE AUTOMATIQUE DE LA FIN DU PROCESSUS OU DU CHANGEMENT DE CIBLE, DANS LE CAS D'ELABORATION DE MULTICOUCHES. L'INVENTION COUVRE EGALEMENT DES APPAREILS COMPORTANT ESSENTIELLEMENT DES MOYENS DE MESURE ET D'INTEGRATION DU COURANT IONIQUE.

SPUTTERING APPARATUS AND FILM FORMING METHOD THEREOF

This invention relates to a sputtering apparatus and a film forming method thereof, more specifically, a technology for suitably controlling distribution characteristics of magnetron plasma in the vicinity of the surface of a target, based on magnetron discharge. In the method for forming films in the sputtering apparatus (100), a target (13) in a vacuum chamber (10) is sputtered by magnetron plasma using a discharge gas. In the method, a power supplied to the target (13) is kept constant, and a discharge gas quantity in the vacuum chamber (10) is adjusted, based on an index indicating the distribution characteristics of the magnetron plasma.

SYSTEM FOR ALIGNING PATTERNS ON A SUBSTRATE USING STENCIL LITHOGRAPHY

The invention relates to a system for aligning two or more patterns on a substrate using vacuum stencil lithography, such as to obtain optimum alignment precision. More specifically, the invention relates to a pattern-alignment system in which a mass sensor, which can detect material emitted, is placed in a known position behind the stencil, such that the position of the stencil can be ascertained as a function of the signal emitted by the sensor.

Vacuum vapor deposition apparatus

A crucible is a monolithic structure extending over an entire area of a vaporizing chamber and has at least one slit groove provided in the upper surface thereof. The at least one slit groove has a length from one end of the upper surface of the crucible to other end thereof. The at least one slit groove is used as a portion for containing the evaporation material (dopant material or the like). Alternatively, a crucible is a monolithic structure extending over the entire area of the vaporizing chamber and has a plurality of holes provided in the upper surface thereof. The holes are used as portions for containing the evaporation material. Further, the crucible is divided into a plurality of regions, and individual electric heaters are provided under the lower surface of the crucible for the respective regions, whereby temperature can be individually controlled for the respective regions by the electric heaters.

MOLECULAR BEAM EPITAXIAL GROWTH DEVICE AND MOLECULAR BEAM CONTROL METHOD THEREIN FOR EXACTLY CONTROLLING THICKNESS AND COMPOSITION OF EPITAXIAL FILM

A measured molecular beam intensity V i is converted into a value V iO at a reference temperature T O by calculating the following equation using the measured molecular beam intensity V i and a measured cell temperature T i : V iO =V i ·exp(A(1/T O -1/T i )). Next, a molecular beam intensity V O (t) at a time (t) is estimated after the last conversion time based on the reference temperature T O in accordance with the converted molecular beam intensity V iO and a corresponding time t i thereof. Further, the temperature of a molecular beam source cell is controlled in accordance with an estimated cell temperature T SP (V SP ), to realize a predetermined molecular beam intensity V SP , given by calculating the following equation using the estimated molecular beam intensity V O (t) and the predetermined molecular beam intensity V SP : T SP (V SP )=1/(1/T O +(log(V SP /V O (t)))/A).

Temperature sensor assembly

An effusion cell assembly is disclosed and includes a temperature sensor designed to balance sensor temperature and cell crucible temperature by an increased heat radiation collection.

METHOD FOR CONTROLLING A FLUX DISTRIBUTION OF EVAPORATED SOURCE MATERIAL, DETECTOR FOR MEASURING ELECTROMAGNETIC RADIATION REFLECTED ON A SOURCE SURFACE AND SYSTEM FOR THERMAL EVAPORATION WITH ELECTROMAGNETIC RADIATION

The present invention relates to a method for controlling a flux distribution (30) of evaporated source material (20) in a system (10) for thermal evaporation with electromagnetic radiation (120), wherein the system (10) comprises an electromagnetic radiation source (110) for providing an electromagnetic radiation (120), a vacuum chamber (12) containing a reaction atmosphere (16) and a detector (40) for measuring electromagnetic radiation (120), wherein a source material (20) and a target material (18) to be coated are arranged in the vacuum chamber (12) and the radiation source is arranged such that its electromagnetic radiation (120) impinges at an angle, preferably at an angle of 45°, on a source surface (22) of the source material (20) for a thermal evaporation and/or sublimation of the source material (20) below the plasma threshold, and wherein the detector (40) for measuring electromagnetic radiation (120) is arranged such that electromagnetic radiation (120) reflected on the source ...

Verfahren und Vorrichtung zum Beschichten eines Substrats im Vakuum

SOURCE TO THE THERMAL PVD COATING FOR ORGANIC ELEKTROLUMINESZENTE LAYERS

METHOD AND APPARATUS FOR IN-SITU CONTROL THE THICKNESS OF LAYERS DEPOSITED BY ION SPRAY ULTRATHIN

Apparatus, method and system for monitoring chamber parameters associated with a deposition process

Apparatus and methods for measuring characteristics of a metallic target as well as other interior surfaces of a sputtering chamber. The apparatus includes a sensor configured to emit an energy beam toward a surface of interest and to detect an energy beam therefrom, the detected energy beam being indicative of parameters of a characteristic of interest of the surface of interest. Quantitative and qualitative characteristics of interest may be determined. A sputtering system including the apparatus and operable according to the methods of the invention is also disclosed.

Method for fabricating three dimensional anisotropic thin films

A method for the production of anisotropic, three dimensional thin films is disclosed. Instead of fabricating away from the routine tendency of vacuum sputter deposited thin films to form discontinuous islands which then accrete into the third dimension, the present method encourages this anisotropic formation. By precisely controlling gun voltage and deposition time, together with spectral control over the plasma forming gas and any reactive gas, with accurate substrate temperature control, and real-time feed-back and control over deposition parameters, two or more materials are sequentially grown on a substrate as distinct discontinuous islands. The resultant film maintains the optimum characteristics of each one of the film's components. Other novel structures made possible by the method of the invention include unique single component and post method deposited component anisotropic thin films.

ELECTRODE FABRICATING APPARATUS FOR RECHARGEABLE BATTERY

An electrode fabricating apparatus for a rechargeable battery according to the present invention includes: a vacuum chamber having an inner space; and a lithium depositor receiving a lithium source and having an evaporation unit heating and evaporating the lithium source, and a nozzle unit positioned on the evaporation unit and controlling an aperture ratio to control a deposition amount of lithium.

Electron beam evaporation apparatus

HARD COATING FILM

A hard coating film that has formed therein an adhesion-reinforcing layer that comprises A layers that are composed of [Si(CN)] and B layers that are composed of [TiAl(CN)] or the like. The A layers and B layers are alternately layered upon a substrate upon a ground layer that comprises the B layer. For at least one pair of A layers that are adjacent with the B layer therebetween, the A layer that is farther from the ground layer is thicker than the A layer that is closer to the ground layer. The thickest A layer is 15 nm or more.

COATING APPARATUS AND METHOD FOR USE THEREOF

A cathode arc evaporator of metals and alloys for coating in a vacuum chamber, including an ignition device adapted for initiating an arc discharge, at least one anode, a water- cooled, consumable tubular cathode arranged along a longitudinal axis and rotatable thereabout, an electromagnetic system disposed within the cathode and adapted for forming an arch-like magnetic field, formed by at least one electromagnetic coil, in the vicinity of a surface of the cathode, resulting in a displaceable cathode spot, which is steerable by the magnetic field, at least one sensor responsive to the proximity of the cathode spot, and a controller which is configured to switch the polarity of the current of the at least one electromagnetic coil in response to the signals received from the at least one sensor.

Deposition apparatus and deposition material supply method

A deposition apparatus capable of suppressing pressure increase and temperature increase within a vapor generation unit and precisely controlling the temperature. A deposition apparatus for performing deposition treatment on a glass substrate (G) is provided with: a treatment chamber (5) which houses the glass substrate (G); a vapor generation unit (1) which generates vapor of a deposition material by heating the deposition material; a carrier path (21) for carrying the vapor of the deposition material generated by the vapor generation unit (1), together with carrier gas, to the treatment chamber (5); an exhaust path (22), a regulation valve device (31) which is provided in the middle of the carrier path; an exhaust valve device (32) which is provided in the middle of the exhaust path (22); a material temperature detection unit (64) which detects the temperature of the vapor generation unit (1); a first vapor amount detection unit (23), and a control unit (8) which, when the deposition ...

Enhanced cathodic arc source for arc plasma deposition

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional- jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/ deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility ...

METHOD AND SYSTEM RELATING TO THICKNESS CONTROL OF FILM VAPOR DEPOSITION

A method and system for determining a source flux modulation recipe for achieving a selected thickness profile of a film to be deposited (e.g., with highly uniform or highly accurate custom graded thickness) over a flat or curved substrate (such as concave or convex optics) by exposing the substrate to a vapor deposition source operated with time-varying flux distribution as a function of time. Preferably, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. Preferably, the method includes the steps of measuring the source flux distribution (using a test piece held stationary while exposed to the source with the source operated at each of a number of different applied power levels), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of source flux modulation recipes, and determining ...

Process for preparing arsenic-selenium photoreceptors

A process for preparing arsenic-selenium photoreceptors wherein the arsenic distribution in the photoreceptor, particularly at its top surface, is controlled within a preferred concentration range, which comprises controlling the evaporation rate of the arsenic-selenium alloy by means of a crucible weight sensing system to monitor alloy depletion rate and a cascade dual-loop feedback control system processing both crucible assembly weight change and temperature to modify resistive power input.

METHOD OF AND APPARATUS FOR MONITORING MASS FLOW RATE OF LUBRICANT VAPOR FORMING LUBRICANT COATING OF MAGNETIC DISK

PROBLEM TO BE SOLVED: To extend an effective life of piezoelectric crystals of a gauge monitoring a mass flow rate of lubricant vapor evaporating from a supply source of a liquid lubricant. SOLUTION: Lubricant coatings are applied as lubricant vapor to magnetic disks 18 in a lubricant vapor flow path between the disks and a reservoir 24 for liquid lubricant that is heated to the vapor. The flow path includes a vapor chamber between the reservoir and an apertured diffusers 26, 28 and 30. Piezoelectric crystals 70 and 72 selectively, at different times, monitor the flow rate of lubricant vapor flowing in the vapor chamber and a result achieved by selectively positioning a shutter 73 that is selectively opened and closed between the vapor flowing in the vapor chamber and the crystals. Temperature variations of the crystals are compensated by a feedback arrangement for maintaining the crystal temperature constant. Since the crystals are not exposed to lubricant vapor at all times, the effective ...

Quelle zur thermischen PVD-Beschichtung für organische elektrolumineszente Schichten

有机场致发光膜蒸镀用蒸镀源

... 本发明提供了可以补偿加热装置与蒸镀材料表面之间的间隔变化的、用于形成有机场致发光膜的蒸镀源。包括：容器，由上部板、侧壁和底构件构成；加热装置，对蒸镀材料提供热量；以及移动装置，根据探测装置的信号进行工作，移动加热装置，加热装置借助于移动装置向下移动，使得加热装置与蒸镀材料表面之间的间隔维持初始设定值。探测装置和加热装置设置在上部板上，移动装置包括：多个缸筒，使上部板上下移动；以及控制装置，接收探测装置的信号，当上部板与蒸镀材料表面之间的间隔比设定的间隔大时，使缸筒工作，沿侧壁向下移动上部板。 ...

VACUUM VAPOR DEPOSITION APPARATUS

In a vacuum vapor deposition apparatus including a plurality of linear-shaped vaporization sources, equal-thickness surfaces are calculated for vaporization containers, respectively. Each of the equal-thickness surfaces indicates where a deposition amount of vapor of a vaporization material released from release holes in the corresponding vaporization container is the same per unit time. Then, the vaporization containers are placed in such a manner that contact points of the respective equal-thickness surfaces all coincide with each other on a deposition surface of a substrate, each of the contact points being where the corresponding equal-thickness surfaces come in contact with the surface of the substrate. 13-. (canceled)4. A vacuum vapor deposition method , comprising:disposing a plurality of vaporization containers each containing a vaporization material and having a plurality of release holes arranged linearly in arrangement directions parallel with each other in the plurality of vaporization containers;moving a substrate or the vaporization containers relatively in a direction perpendicular to the arrangement directions;calculating equal-thickness surfaces for each release holes, respectively, each of the equal-thickness surfaces indicating where a deposition amount of a vapor of the vaporization material released from each release holes is the same per unit time; andplacing the vaporization containers in such a manner that contact points of the respective equal-thickness surfaces of the release holes being faced each other in the plurality of vaporization containers, all coincide with each other on a surface of the substrate, each of the contact points indicating where the corresponding equal-thickness surfaces come in contact with the surface of the substrate; andheating the vaporization containers to evaporate or sublimate the respective vaporization materials so as that vapors of the respective materials are released through the plurality of release holes, ...

Verfahren zur Herstellung eines leitenden, durchsichtigen Films.

Method and system relating to thickness control of film vapor deposition

Evaporation device, evaporation adjustment method and computer-readable medium

For gas-phase deposition applications measuring apparatus and method

在其中有必要在特定公差内测量和/或控制蒸发源的沉积速率的气相沉积应用中，特别是OLED大规模生产中，测量系统被适配成在高和低的速率源处使用鲁棒且准确的光学厚度测量方法，以便沉积在衬底上的层的厚度能够被测量和控制。第一蒸发源(11)将材料的层沉积在衬底(20)上。移动元件(41)被提供，在所述移动元件(41)上，薄膜从第二蒸发源(12b)被沉积在沉积位置(D1)中。随后，所述移动元件被输送到测量位置(D2)，其中所述薄膜的厚度被厚度检测器(45)测量。所述测量设备被布置成依赖于沉积在所述移动元件上的所述薄膜的厚度来控制所述第一蒸发源的沉积。

VAPORIZING APPARATUS AND CONTROL METHOD FOR THE SAME

ELECTRON BEAM EVAPORATION APPARATUS

An electron-beam evaporation apparatus having a source material feeder, for feeding a source material; an electron-beam evaporation source, for evaporating a said source material; means for generating an emission current between the electron-beam evaporation source and the said source material, an actuator for moving the source material feeder in a linear direction, and a controller operable to control the deposition of the source material relative to characteristics of the electron beam and measurements of the emission current.

Device for measuring the profile of a metal film sputter deposition target, and system and method employing same

An apparatus and method for measuring the erosion profile of a metallic target in a sputtering device are provided by inserting a thin sensor into a gap between the target and a substrate pedestal. The sensor is configured to emit an energy beam toward the surface of the target and to detect a reflection of the energy beam. The sensor may comprise a source element configured to emit a collimated light beam and a plurality of detectors arranged in a linear array. The sensor may also comprise optical fibers configured to reduce the size of the sensor. The detectors are positioned relative to the source element so that one of the detectors in the array will be illuminated by a reflection of the collimated light beam. The distance from the sensor to the target may be derived from the position of the detector illuminated by the reflected beam.

Evaporation source heating system with soaking layer

The present invention discloses an evaporation source heating system including a vacuum heating container, a first heating source disposed around an outer peripheral surface of the heating container and a soaking layer disposed in the heating container, and the soaking layer is disposed opposite to an inner wall of the heating container so as to uniformly transmit heat emitted from the inner wall of the heating container. The present invention provides the soaking layer in the heating container of the evaporation source heating system, on one hand, a risk of material crack caused due to exorbitant local temperature is avoided, and on the other hand, heating uniformity is also improved. In addition, by heating the soaking layer in the heating container, time needed for realizing uniform heating is sharply shortened, and a heating state of the system is also real-time controlled more conveniently.

PVD coatings with a HEA ceramic matrix with controlled precipitate structure

The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

METHOD OF MANUFACTURING PHOTORECEPTOR

ROD-FED SOURCE POOL HEIGHT MONITOR

ELECTRO-OPTICAL DISPLACEMENT SENSOR

apparatus for manufacturing semiconductor device and manufacturing method of the same

DEPOSITION APPARATUS AND DEPOSITION MATERIAL SUPPLY METHOD

Evaporation source for depos i tion of evaporated material on a substrate, depos i tion ap paratus , method of measuring a vapor pres sure of evaporation source , method for determining an evaporation rate of an evaporated material , and method of measur

METHOD FOR SUPPLYING DEPOSITION MATERIAL, METHOD FOR PRODUCING SUBSTRATE, CONTROL DEVICE, AND DEPOSITION DEVICE

This method for supplying a deposition material is provided with: a heating step for heating and vaporizing a deposition material housed in a material housing unit that houses the deposition material; a supply step for supplying the deposition material into the material housing unit by means of sending solid deposition material into molten deposition material within the material housing unit, causing the melting of the solid deposition material; and a melting state detection step for detecting the melting state of the solid deposition material being supplied in the supply step.

VACCUM ARC VAPOR DEPOSITION DEVICE

ELECTRO-OPTICAL DISPLACEMENT SENSOR

SYSTEM FOR MEASURING A DIAMETER AND/OR THICKNESS OF A TARGET ARRANGED WITHIN A CHAMBER FOR DEPOSITING A DEPOSITION EQUIPMENT

Thin layer deposition apparatus and thin layer deposition method

METHOD AND SYSTEM RELATING TO FLUX DISTRIBUTION AND FILM DEPOSITION

A method and system for producing a thin film with highly uniform (or highly accurate custom graded) thickness on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source with controlled (and generally, time-varying) velocity. In preferred embodiments, the method includes the steps of measuring the source flux distribution (using a test piece that is held stationary while exposed to the source), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of sweep velocity modulation recipes, and determining from the predicted film thickness profiles a sweep velocity modulation recipe which is adequate to achieve a predetermined thickness profile. Aspects of the invention include a practical method of accurately measuring source flux distribution, and a computer-implemented method employing a graphical user interface to facilitate convenient ...

Apparatus, method and system for monitoring chamber parameters associated with a deposition process

Apparatus and methods for measuring characteristics of a metallic target as well as other interior surfaces of a sputtering chamber. The apparatus includes a sensor configured to emit an energy beam toward a surface of interest and to detect an energy beam therefrom, the detected energy beam being indicative of parameters of a characteristic of interest of the surface of interest. Quantitative and qualitative characteristics of interest may be determined. A sputtering system including the apparatus and operable according to the methods of the invention is also disclosed.

METHOD FOR CONTROLLING THE DEPOSITION RATE OF THIN FILMS IN A VACUUM MULTI-NOZZLE PLASMA SYSTEM AND A DEVICE FOR PERFORMING OF THE METHOD

A method of controlling deposition rate of a film deposition in a vacuum multi-plasma-jet system utilizing plasma-chemical reactions in an active discharge zone, wherein the system comprises at least one series of plasma nozzles, the working tubes of which are terminated by a hollow cathode whose mouth is located in the vicinity of the top area of the holding system with the stored substrate, wherein the principle of the solution consists in the deposition of the thin film on the substrate after the individual ignition of the discharges in each plasma nozzle and in the control of their parameters by means of external sources of voltage, the temperature of each hollow cathode is monitored by means of contactless temperature measurement and based on the evaluation of the measured temperature values, the settings of the discharge parameters is provided, with help of an control unit, in particular it is regulated the effective current in each of the plasma nozzles so that the deposition rates of all the hollow cathodes of the plasma nozzles are the same. A device to provide a method for controlling the deposition rate is also provided.

Electron beam physical vapor deposition apparatus and processes for adjusting the feed rate of a target and manufacturing a multi-component condensate free of lamination

A process for adjusting a feed rate in an electron-beam physical vapor deposition apparatus includes the steps of positioning a target at a first height within a chamber of an electron-beam physical vapor deposition apparatus; feeding the target at a rate into a beam of electrons generated by an electron gun of the electron-beam physical vapor deposition apparatus; evaporating the target with the beam of electrons; monitoring the first height by measuring a difference between a first light intensity and a second light intensity of at least one image of the target using an optical sensor disposed proximate to the chamber; determining a change in the first height; and adjusting a target feed rate.

Vorrichtung und Verfahren zur Bestimmung der Konzentration eines Dampfes

Die Erfindung betrifft eine Vorrichtung zur Bestimmung des Partialdrucks oder der Konzentration eines Dampfes in einem Volumen (2) mit einem in eine Oszillation bringbaren, auf eine Temperatur unterhalb der Kondensationstemperatur des Dampfes temperierbaren Sensorkörper (5), dessen Oszillationsfrequenz durch eine aus einer Sensoroberfläche (6) vom kondensierten Dampf gebildete Massenanhäufung beeinflusst wird. Ein Dampftransportkanal (20) ist von einem Rohrstutzen (17) umgeben, der sich mit einem Ende an ein Fenster (3) zum Volumen (2) anschließt und so mit seinem anderen Ende durch einen Spalt von der Sensoroberfläche (6) beabstandet ist, wobei der Spalt einen Strömungskanal (16) zum Einspeisen des Gasstroms in den Dampftransportkanal (20) ausbildet.

Process monitoring and control

Electron beam evaporation apparatus

An electron beam evaporation apparatus 10 comprises a source material feeder 12 for feeding a source material 14, an electron beam evaporation source 16 for evaporating a source material, means for generating an emission current between the electron beam evaporation source and a source material, an actuator 28 for moving the source material feeder in a linear direction and a controller 32 operable to control the deposition of the source material relative to characteristics of an electron beam and measurements of the emission current. The controller may further comprise an electron beam feedback loop, an emission current feedback loop or both 54. Also disclosed is a method of evaporating material onto a surface comprising the steps of providing a source material feeder, an electron beam evaporation source, means for generating an emission current, an actuator and a controller, measuring the emission current and a beam current, inputting the measurements into the controller and controlling ...

Method and apparatus for coating a substrate in a vacuum

VAPORIZING DEVICE COMPRISING A UNIT CAPABLE OF CONTROLLING THE AMOUNT OF VAPORIZATION OF A RAW MATERIAL IN REAL TIME AND CONTROL METHOD THEREOF

PURPOSE: A vaporizing device and a control method thereof are provided to prevent performance decrease even in times of supply of a large amount of a raw material since a vaporization measuring unit does not make direct contact with raw gas. CONSTITUTION: A vaporizing device comprises a crucible(221), a heating unit(222), a temperature measuring unit(230), a power measuring unit(240) and a control unit(500). The crucible holds a raw material. The heating unit heats the crucible and vaporizes the raw material. The temperature measuring unit measures the temperature of the crucible. The power measuring unit measures the power applied to the heating unit. The control unit controls the amount of vaporization of the raw material based on one of the temperature change of the temperature measuring unit and the power change of the power measuring unit. COPYRIGHT KIPO 2011 ...

VAPORIZATION APPARATUS AND METHOD FOR CONTROLLING THE SAME

Disclosed are a vaporization apparatus and a control method for the same. The vaporization apparatus includes a vaporization crucible adapted to receive a raw material; a vaporization heating unit adapted to vaporize the raw material by heating the vaporization crucible; a temperature measuring unit adapted to measure temperature of the vaporization crucible; a power measuring unit adapted to measure an applied power of the vaporization heating unit; and a control unit adapted to control a vaporization quantity of the raw material based on any one of a temperature variation value of the temperature measuring unit and a power variation value of the power measuring unit. The vaporization apparatus uses a non-contact/electronic method which measures a vaporization quantity through a temperature variation value and a power variation value during vaporization of a raw material. Therefore, since, differently from a contact method, a vaporization quantity measuring unit does not directly contact ...

Temperature sensor supporting structure for evaporation source

Vaporization apparatus and control method for the same

Vaporization apparatus and control method for the same

Disclosed are a vaporization apparatus and a control method for the same. The vaporization apparatus includes a vaporization crucible adapted to receive a raw material; a vaporization heating unit adapted to vaporize the raw material by heating the vaporization crucible; a temperature measuring unit adapted to measure temperature of the vaporization crucible; a power measuring unit adapted to measure an applied power of the vaporization heating unit; and a control unit adapted to control a vaporization quantity of the raw material based on any one of a temperature variation value of the temperature measuring unit and a power variation value of the power measuring unit. The vaporization apparatus uses a non-contact/electronic method which measures a vaporization quantity through a temperature variation value and a power variation value during vaporization of a raw material. Therefore, since, differently from a contact method, a vaporization quantity measuring unit does not directly contact ...

EVAPORATOR, COATING INSTALLATION, AND METHOD FOR USE THEREOF

An evaporator for applying vapor to a substrate at a coating rate is described. The evaporator includes an evaporator tube having a distribution pipe with at least one nozzle outlet, wherein the evaporator tube includes a pressure measurement device, the pressure measurement device comprising an optical diaphragm gauge.

THERMAL EVAPORATION SOURCES FOR WIDE-AREA DEPOSITION

A thermal evaporation sources are described. These thermal evaporation sources include a crucible configured to contain a volume of evaporant and a vapor space above the evaporant.

Process monitoring and control

A sensor applicable to plasma processes (e.g. magnetron sputtering), or to non-plasma processes, in order to provide a control or monitoring signal for the process is adapted to be attached to a process environment 4 containing gas or vapour related to the process and includes means for exciting species present in the gas or vapour to produce emission of electromagnetic radiation therefrom and means for detecting the emitted radiation to provide information relating to the process, e.g. for use in feedback control of the process. The excitation means may comprise an anode 1 and a cathode 2 between which a plasma discharge 9 may be produced. Alternatively, a laser (10, figure 4) may be provided to produce the excitation e.g. by inducing fluorescence. An optical collecting device 5 directs emitted radiation to a detection device which provides information relating to the spectral content of the emitted radiation.

VAPORIZATION APPARATUS AND METHOD FOR CONTROLLING THE SAME

Disclosed are a vaporization apparatus and a control method for the same. The vaporization apparatus includes a vaporization crucible adapted to receive a raw material; a vaporization heating unit adapted to vaporize the raw material by heating the vaporization crucible; a temperature measuring unit adapted to measure temperature of the vaporization crucible; a power measuring unit adapted to measure an applied power of the vaporization heating unit; and a control unit adapted to control a vaporization quantity of the raw material based on any one of a temperature variation value of the temperature measuring unit and a power variation value of the power measuring unit. The vaporization apparatus uses a non-contact/electronic method which measures a vaporization quantity through a temperature variation value and a power variation value during vaporization of a raw material. Therefore, since, differently from a contact method, a vaporization quantity measuring unit does not directly contact ...

ELECTRON BEAM EVAPORATOR, COATING APPARATUS AND COATING METHOD

In accordance with various embodiments, an electron beam evaporator can comprise the following: a tubular target; an electron beam gun for producing at least one vapor source on a removal surface of the tubular target by means of an electron beam; wherein the removal surface is a ring-shaped axial end surface or a surface of the tubular target that extends conically or in a curved fashion from the free end edge.

Method and system using power modulation for maskless vapor deposition of spatially graded thin film and multilayer coatings with atomic-level precision and accuracy

A method and system for producing a film (preferably a thin film with highly uniform or highly accurate custom graded thickness) on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source operated with time-varying flux distribution. In preferred embodiments, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. A user selects a source flux modulation recipe for achieving a predetermined desired thickness profile of the deposited film. The method relies on precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.

DEVICE AND METHOD FOR EVAPORATING AN ORGANIC POWDER

In a method for evaporating a non-gaseous starting material, the starting material is introduced into an evaporation chamber; an evaporation element heats the starting material to create a vapor; a conveying gas flow transports the vapor through a conveying channel and past a sensor, which measures the concentration or partial pressure of the vapor in the gas flow flowing through the conveying channel; and the mass flow of the vapor through the conveying channel is controlled by varying the conveying gas flow with respect to a setpoint value. To keep the vapor flow largely constant over time, a compensating gas flow is fed into the conveying channel at a mixing point disposed between the evaporator and the sensor. A second mass flow controller controls the mass flow of the compensating gas flow such that, when the conveying gas flow varies, the gas flow flowing past the sensor remains constant.

Source for thermal physical vapour deposition of organic electroluminescent layers

A gas turbine component (30), such as a turbine disk (36, 40) or a turbine seal element (44, 46, 48), is protected by depositing an oxide coating (60) on the gas turbine component (30). The deposition is performed by a vapor deposition process such as metal-organic chemical vapor deposition (MOCVD) to a coating thickness of from about 0.2 to about 50 micrometers, preferably from about 0.5 to about 3 micrometers. The deposited oxide may be an oxide of aluminum, silicon, tantalum, titanium, and chromium.

System and method relating to vapor deposition

VACUUM DEPOSITION DEVICE WHICH ACCURATELY MEASURES THE REMAINDER OF DEPOSITING MATERIALS

PURPOSE: A vacuum deposition device which accurately measures the remainder of depositing materials is provided to prevent the depositing of depositing materials to a sight glass. CONSTITUTION: A vacuum deposition device comprises a crucible(3), a vacuum chamber(1), a film and a measuring part. The crucible is arranged within the vacuum chamber. One or more mirror is formed inside the vacuum chamber. The mirror reflects laser lights. A layer is formed on a substrate(4) by suing depositing materials. COPYRIGHT KIPO 2011 ...

Cathode assembly, physical vapor deposition system, and method for physical vapor deposition

A cathode assembly for a physical vapor deposition (PVD) system includes a target holder and a thickness detector. The target holder is for holding a target, in which the target has a first major surface and a second major surface. The first major surface and the second major surface are respectively proximal and distal to the target holder. The thickness detector is disposed on the target holder. At least one portion of the first major surface is exposed to the thickness detector for allowing the thickness detector to detect the thickness of the target through the first major surface.

FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD

A film deposition apparatus comprises: a vacuum chamber; a cylindrical target, a circumferential surface of the target being opposite to a substrate, and the target being disposed in the vacuum chamber so as to intersect a conveyance direction of the substrate; a driving unit configured to rotatively drive the target; a magnetic field creator disposed inside the target; a reactive gas flow unit configured to flow a reactive gas, the reactive gas flow unit being disposed in the vicinity of the target; an optical emission monitor configured to monitor an optical emission intensity of plasma at a location between the substrate and the target and in the vicinity of the target; and a controlling unit configured to control a rotation speed of the target driven by the driving unit, such that the optical emission intensity monitored by the optical emission monitor approaches a preset target optical emission intensity.

APPARATUS FOR PROCESSING COATING MATERIAL AND EVAPORATION DEPOSITION DEVICE HAVING SAME

An apparatus for processing coating material includes a crucible having a receptacle for receiving coating material, a drive member having a drive shaft, a cover coupled to the drive shaft, and a monitor system including a light source and a camera module. The cover includes a flat surface, a slot defined in the flat surface, a first through hole and a second through hole respectively communicating with opposite ends of the slot. The drive shaft drives the cover to rotate between a closed position where the cover covers the receptacle, and the flat surface presses and flattens the coating material, and an open position where the cover is moved away from the receptacle. The light source is for emitting light through the first through hole to illuminate the coating material. The camera module is for capturing images of the illuminated coating material through the second through hole.

Method of and apparatus for substantially preventing condensation on surfaces of a flow path for lubricant vapor flowing to a magnetic disk to form a lubricant coating on the disk

Condensation is prevented on surfaces in a flow path for lubricant vapor that applies lubricant coatings to magnetic disks 18 in the flow path. The vapor is derived by heating liquid in a reservoir 24. The flow path includes a vapor chamber between the reservoir and an apertured diffuser 30. The vapor chamber has a first wall extending in the same direction as a straight-line path between the reservoir and the disk and a second wall providing a heat conduction path between the heater and the reservoir. The relative temperatures of the first and second walls is controlled to prevent substantial condensation on surfaces of the flow path.

ELECTRO-OPTICAL DISPLACEMENT SENSING

... 1294234 Photo-electric measurement of displacement UNITED AIRCRAFT CORP 24 Feb 1970 [13 March 1969] 8855/70 Heading G1A [Also in Divisions G3 and C7] The surface of the molten source pool 20 of a vacuum vapour deposition system is maintained at a constant height under the control of a photoelectric level sensing arrangement. Monochromatic light from a helium-neon gas laser 28 is focused into a spot on the surface 20 by lens and aperture system 32, 34, 44. The large focal length of lens 34 and small aperture 44 provide a large depth of field and allow for changes in surface 20 height and ensure greater separation of these elements from the pool so minimizing deposition of condensate thereon. An inert gas flow through aperture 42 also prevents such deposition. A similar optical system 62, 50, 52 receives the reflected beam. At the downstream conjugate focus of lens systems 50, 52 is located a pair of silicon photo-diodes 64, receiving reflected light which may be a continuous beam or periodic ...

Vacuum vapor deposition apparatus

A vacuum vapor deposition apparatus is provided. In the vacuum vapor deposition apparatus, evaporation material is formed with an evaporation apparatus by evaporation after organic solvent is removed from organic liquid material. The evaporation material is directed to a substrate in a vacuum container for vapor deposition. The evaporation apparatus includes an evaporation container filled with organic liquid material and forming an exhaust port of evaporated solvent; a heater of evaporation setting a temperature that only evaporates the organic solvent but not the vapor deposition material; a vacuum pump for evaporation room connected to the exhaust port through an on-off valve; and a flow regulating valve which is turned off by the evaporation apparatus when the heater of evaporation evaporates only the organic solvent in the evaporation container. After the organic solvent in the evaporation container is evaporated, the on-off valve is opened and the pump for evaporation room is used ...

A CRUCIBLE DEVICE USED IN COATING SYSTEM

The present invention discloses a crucible device used in coating system. The crucible device used in coating system comprise a barrel structure, a plurality of heaters, a crucible, a plurality of temperature sensors, and a plurality of driving means, the plurality of heaters are arranged in vertical direction in the barrel structure and used to heat the materials in the crucible, the plurality of temperature sensors are arranged in vertical direction in the crucible to measure the temperature inside the crucible, the plurality of driving means are used to drive at least one of the plurality of heaters to move in vertical direction so as to control the temperature inside the crucible. By this way, the evaporation rate can be controlled and stay stable. 1. A crucible device used in coating system , comprising a barrel structure , a plurality of heaters , a crucible , a plurality of temperature sensors , and a plurality of driving means , wherein the plurality of heaters are arranged in vertical direction in the barrel structure and used to heat the materials in the crucible , the plurality of temperature sensors are arranged in vertical direction in the crucible to measure the temperature inside the crucible , the plurality of driving means are used to drive at least one of the plurality of heaters to move in vertical direction so as to control the temperature inside the crucible.2. The crucible device used in coating system of claim 1 , wherein the plurality of heaters comprise electric heating wires wound on the inner wall of the barrel structure.3. The crucible device used in coating system of claim 2 , wherein the crucible is inside the barrel structure and the plurality of heaters are located between the outer wall of the crucible and the inner wall of the barrel structure.4. The crucible device used in coating system of claim 3 , wherein the arrangement density of the plurality of heaters is varied in vertical direction.5. The crucible device used in coating ...

COATING APPARATUS AND METHOD FOR USE THEREOF

A cathode arc evaporator of metals and alloys for coating in a vacuum chamber, including an ignition device adapted for initiating an arc discharge, at least one anode, a water-cooled, consumable tubular cathode arranged along a longitudinal axis and rotatable thereabout, an electromagnetic system disposed within the cathode and adapted for forming an arch-like magnetic field, formed by at least one electromagnetic coil, in the vicinity of a surface of the cathode, resulting in a displaceable cathode spot, which is steerable by the magnetic field, at least one sensor responsive to the proximity of the cathode spot, and a controller which is configured to switch the polarity of the current of the at least one electromagnetic coil in response to the signals received from the at least one sensor.

METHOD FOR CONTROLLING AN EVAPORATION RATE OF SOURCE MATERIAL, DETECTOR FOR MEASURING ELECTROMAGNETIC RADIATION REFLECTED ON A SOURCE SURFACE AND SYSTEM FOR THERMAL EVAPORATION WITH ELECTROMAGNETIC RADIATION

Elektronenstrahlverdampfer, Beschichtungsvorrichtung und Beschichtungsverfahren

Gemäß verschiedenen Ausführungsformen kann ein Elektronenstrahlverdampfer (100) Folgendes aufweisen: ein Rohrtarget (102); eine Elektronenstrahlkanone (104) zum Erzeugen mindestens einer Dampfquelle (102q) auf einer Abtragfläche (102f) des Rohrtargets (102) mittels eines Elektronenstrahls (104e); wobei die Abtragfläche (102f) eine ringförmige axiale Stirnfläche oder eine vom freien Stirnrand aus konisch oder gewölbt verlaufende Fläche des Rohrtargets (102) ist.

Thermal evaporation sources for wide-area deposition

Method for determining process-specific data of a vacuum deposition process

A method for determining process-specific data of a vacuum deposition process, in which a substrate is coated in a vacuum chamber by a material detached from a target connected to a magnetron, an optical emission spectrum being recorded and process-significant data of the vacuum deposition process being determined therefrom for further processing in measurement or regulating processes, is optimized to minimize errors in the determination of process-significant data. At least three intensities of spectral lines of at least two process materials are determined from the optical emission spectrum. From these, single and multiple intensities are mathematically correlated with and to one another and a process-significant datum, which is used in subsequent measurement or regulating processes, is determined from the relation results by a further mathematical relation.

Deposition apparatus

A deposition apparatus includes a chamber, a first stage and a second stage for supporting substrates within the chamber, an evaporating source assembly moving a first stage area corresponding to the first stage and a second stage area corresponding to the second stage, and including a plurality of nozzles through which a source material is spurted, and a photographing assembly which is disposed between the first stage and the second stage and photographs the plurality of nozzles.

FILM THICKNESS TEST APPARATUS AND METHOD AND VAPOR DEPOSITION DEVICE

The present disclosure provides a film thickness test apparatus and method, and a vapor deposition device. The film thickness test apparatus is arranged for one process cavity, and the film thickness test apparatus comprises: a test assembly; a transport assembly configured to, when moving towards the process cavity, drive the test assembly into the process cavity so that the test assembly is vapor deposited in the process cavity to form a test film, and, when moving away from the process cavity, drive the test assembly out of the process cavity; and a drive assembly configured to drive the transport assembly to move along a direction towards/away from the process cavity. 1. A film thickness test apparatus arranged for one process cavity , the film thickness test apparatus comprising:a test assembly;a transport assembly configured to, when moving towards the process cavity, drive the test assembly into the process cavity so that the test assembly is vapor deposited in the process cavity to form a test film, and, when moving away from the process cavity, drive the test assembly out of the process cavity; anda drive assembly configured to drive the transport assembly to move along a direction towards/away from the process cavity.2. The film thickness test apparatus according to claim 1 ,wherein the transport assembly comprises a retractable member which has a hollow interior, and has one end connected to one end of the test assembly within the retractable member while the other end connected to the process cavity;wherein the drive assembly is configured to drive the retractable member to stretch/retract so that the one end of the retractable member is moved along a direction towards/away from the process cavity; andwherein the retractable member is configured to, when the one end of the retractable member is moved towards the process cavity, drive the test assembly into the process cavity so that the test assembly is vapor deposited in the process cavity to form a ...

DEVICE AND METHOD FOR DETERMINING THE CONCENTRATION OF A VAPOR

A device for determining the partial pressure or the concentration of a steam in a volume, includes a sensor body that can be oscillated. The temperature of the sensor body can be controlled to a temperature below the condensation temperature of the steam, and the oscillation frequency of the sensor body is influenced by a mass accumulation of the condensed steam on a surface of the sensor body. Means are provided for generating a gas flow from the sensor surface in the direction of the volume through a steam transport channel that adjoins a window to the volume. In order to increase the maximum service life of the sensor body, the means for generating a gas flow has a slit nozzle designed as an annular channel. 12. A device for determining a partial pressure or a concentration of a vapor in a volume () , the device comprising:{'b': 5', '6', '5', '20', '3', '2', '6, 'a sensor body () configured to be brought into oscillation, the sensor body having a temperature that is controllable to a temperature below the condensation temperature of the vapor, and an oscillation frequency that is influenced by an accumulated mass formed by the vapor condensing on a sensor surface () of the sensor body (), wherein vapor transport channel () adjoins a window () to the volume (), through which the vapor diffuses in a direction of transport (T) towards the sensor surface (); and'}{'b': 16', '6', '20, 'an annular channel () that forms a wide slit nozzle through which a gas flow is generated, the gas flow flowing from the sensor surface () towards the vapor transport channel () in a direction counter to the direction of transport (T) of the diffusion of the vapor.'}2165. The device of claim 1 , wherein the annular channel () is provided in an immediate vicinity of the sensor body ().32. A device for determining a partial pressure or a concentration of a vapor in a volume () claim 1 , the device comprising:{'b': 5', '5', '6', '5, 'a sensor body () that is configured to be brought into ...

EVAPORATION SOURCE

An evaporation source includes a casing, a crucible configured to receive evaporation material, a spray nozzle, a first heating wire, and a lifting mechanism. The casing includes a first end, a second end opposite the first end, and a transmission chamber disposed between the first end and the second end. The evaporation material forms a heating surface on a surface in the crucible when the evaporation material is heated in the crucible. The crucible is disposed in the casing and is positioned at the second end. The crucible is in communication with the transmission chamber. The spray nozzle is disposed at the first end and is in communication with the transmission chamber. The first heating wire is directly fixed in the casing and the first heating wire is positioned between the crucible and the spray nozzle. The lifting mechanism is movably connected to the casing. 1. An evaporation source , comprising:a casing comprising a first end, a second end opposite the first end, and a transmission chamber disposed between the first end and the second end;a crucible configured to receive evaporation material, the evaporation material forming a heating surface on a surface in the crucible when the evaporation material is heated in the crucible, the crucible being disposed in the casing and positioned at the second end, and the crucible in communication with the transmission chamber;a spray nozzle configured for injecting vapor formed by evaporating the evaporation material, the spray nozzle being disposed at the first end and in communication with the transmission chamber;a first heating wire configured for heating the heating surface, the first heating wire directly fixed in the casing and positioned between the crucible and the spray nozzle;a lifting mechanism movably connected to the casing, the lifting mechanism being fixed and connected to the crucible, the lifting mechanism controlling the crucible to move using the lifting mechanism movably connected to the casing, ...

Electromagnetic Module for Physical Vapor Deposition

Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

EBPVD Columnated Vapor Stream

An electron beam vapor deposition process for depositing coatings includes placing a source coating material in a crucible of a vapor deposition apparatus; energizing the source coating with an electron beam raster pattern that delivers a controlled power density to the material in the crucible forming a vapor cloud from the source coating material; and depositing the source coating material onto a surface of a work piece.

CRUCIBLE FOR VAPOR DEPOSITION, VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD

Provided are a crucible for vapor deposition, a vapor deposition apparatus and a vapor deposition method capable of detecting a film formation rate using a sensor in vapor deposition by proximity vapor deposition. The crucible according to the present invention includes a storage section that stores a vapor deposition source, a first guide passage that guides a vaporized material emitted from the vapor deposition source toward a substrate to be treated, a wall section for defining the first guide passage and a second guide passage that diverges from a middle part of the first guide passage, penetrates the wall section and communicates with the outside. 1. A crucible for vapor deposition comprising:a storage section that stores a vapor deposition source;a first guide passage that guides a vaporized material emitted from the vapor deposition source toward a substrate to be treated;a wall section for defining the first guide passage; anda second guide passage that diverges from a middle part of the first guide passage, penetrates the wall section and communicates with the outside.2. The crucible for vapor deposition according to claim 1 , wherein the second guide passage is an orifice that penetrates the wall section.3. The crucible for vapor deposition according to claim 2 , wherein a protrusion that protrudes outward is provided on an outer surface of the wall section and the second guide passage is formed so as to penetrate the protrusion and communicate with the orifice of the wall section.4. A vapor deposition apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the crucible for vapor deposition according to ;'}a vacuum chamber that can store the crucible for vapor deposition therein;a vacuum pump connected to the vacuum chamber;a heater for heating the crucible for vapor deposition; anda sensor for measuring a thickness of a film formed by a vaporized material from a vapor deposition source adhering to a substrate to be treated.5. A vapor ...

SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY TANGIBLE MEDIUM

Some embodiments of the present disclosure provide a technique capable of improving a film thickness uniformity on a surface of a substrate and between substrates. According to one or more embodiments, there is provided a technique that includes: a vaporizer configured to generate a source gas by vaporizing a liquid source; a tank in which the source gas ejected from the vaporizer is stored; a flow controller provided at a pipe connecting the vaporizer with the tank; a first valve provided at the pipe; a second valve provided downstream of the tank; a process chamber downstream of the second valve and to which the source gas is supplied; and a controller configured to be capable of controlling the first valve and the second valve to alternately and repeatedly perform accumulation of the source gas from the vaporizer into the tank and release of the source gas from the tank to the process chamber. 1. A substrate processing apparatus comprising:a vaporizer configured to generate a source gas by vaporizing a liquid source supplied thereto;a tank in which the source gas ejected from the vaporizer is stored;a flow controller provided at a pipe connecting the vaporizer with the tank and configured to control a flow rate of the source gas supplied to the tank;a first valve provided at the pipe to open and close a flow path of the pipe;a second valve provided downstream of the tank to release the source gas accumulated in the tank;a process chamber provided downstream of the second valve and to which the source gas is supplied; anda controller configured to be capable of controlling the first valve and the second valve so as to alternately and repeatedly perform an accumulation of the source gas from the vaporizer into the tank and a release of the source gas from the tank to the process chamber.2. The substrate processing apparatus of claim 1 , further comprising:a plurality of tanks comprising the tank wherein the source gas ejected from the vaporizer is stored in the ...

Measurement device and method for vapour deposition applications

In vapour deposition applications, especially OLED mass production, where it is necessary to measure and/or control the deposition rate of evaporation sources within specific tolerances, a measurement system is adapted to use robust and accurate optical thickness measurement methods at high and low rate sources, so that the thickness of a layer deposited on a substrate can be measured and controlled. A first evaporation source ( 11 ) deposits a layer of material on a substrate ( 20 ). A mobile element ( 41 ) is provided, On which a film is deposited from a second evaporation source ( 12 b ) in a deposition location (D 1 ). Subsequently the mobile element is conveyed to a measurement location (D 2 ) where the thickness of the film is measured by a thickness detector ( 45 ). The measurement apparatus is arranged to control the deposition of the first evaporation source in dependence on the thickness of the film deposited on the mobile element.

ENHANCED CATHODIC ARC SOURCE FOR ARC PLASMA DEPOSITION

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth s of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/ deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of l o the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction. 111-. (canceled)12. An apparatus for generation of directional carbon containing plasma flow in a cathodic arc source comprising:a cylindrical graphite cathode rod and an anode formed from of a plurality of spaced baffles, wherein the cylindrical graphite cathode rod and the anode are separated by an annular shaped shield, the shield further including an insulator tube with thin wall graphite bushing inlaid inside of the insulator tube that coaxially surrounds at least a portion of the cathode rod;a bent solenoidal magnetic filter following the cathodic arc source; anda graphite cavity formed by extending the shield from a top surface of the cathode rod, thereby creating a semi-confined space with a cavity orifice at least partially shaped identical to a shape of the top surface of the cathode rod.13. The apparatus of claim 12 , wherein the cathodic arc source further comprising a mechanism configured to selectively move ...

NANOSCALE SURFACE WITH NANOSCALE FEATURES FORMED USING DIFFUSION AT A LINER-SEMICONDUCTOR INTERFACE

A method of forming a semiconductor structure includes patterning one or more fin structures disposed over a top surface of a substrate, a given one of the fin structures comprising a first semiconductor layer comprising a first material disposed over the top surface of the substrate and a second semiconductor layer comprising a second material disposed over a top surface of the first semiconductor layer. The method further includes forming a liner over the one or more fin structures, and performing an anneal process to form one or more nanoscale features in a top surface of the second semiconductor layer. The second material exhibits enhanced diffusion, relative to the first material, at an interface of the liner and sidewalls of the given fin structure. 1. A method of forming a semiconductor structure , comprising:patterning one or more fin structures disposed over a top surface of a substrate, a given one of the fin structures comprising a first semiconductor layer comprising a first material disposed over the top surface of the substrate and a second semiconductor layer comprising a second material disposed over a top surface of the first semiconductor layer;forming a liner over the one or more fin structures; andperforming an anneal process to form one or more nanoscale features in a top surface of the second semiconductor layer, wherein the second material exhibits enhanced diffusion, relative to the first material, at an interface of the liner and sidewalls of the given fin structure.2. The method of claim 1 , wherein the anneal process comprises a thermal anneal in inert gas.3. The method of claim 1 , wherein the anneal process comprises a thermal anneal in an oxygen-containing environment.4. The method of claim 1 , wherein the given fin structure comprises a rectangular pillar claim 1 , and wherein the one or more nanoscale features comprise a pointed tip at each corner of the rectangular pillar.5. The method of claim 1 , wherein the given fin structure ...

EVAPORATOR, EVAPORATION COATING APPARATUS AND EVAPORATION COATING METHOD

An evaporator includes at least one feeding member and a heating member. Each feeding member is configured to transfer a source material in a transfer speed that is adjustable, and the heating member is configured to heat the source material transferred by the feeding member for evaporation to thereby generate a source material vapor. An evaporation coating apparatus further includes a coating chamber, an object holder, and a controller configured to control the transfer speed, wherein the evaporator and the object holder are both disposed inside the coating chamber, the object holder is configured to provide a platform for placing an object to be coated thereon, and the coating chamber is configured to provide an environment for the source material vapor vented out from the evaporator to attach to the object to thereby form a film of the source material onto the object. 1. An evaporator , comprising:at least one feeding member, each configured to transfer a source material in a transfer speed that is adjustable; anda heating member, configured to heat the source material transferred by the feeding member for evaporation to thereby generate a source material vapor.2. The evaporator of claim 1 , wherein each feeding member is configured to transfer the source material to the heating member in portions claim 1 , wherein:each portion of the source material is transferred to the heating member in a time period; andthe time period for each portion is adjustable to thereby realize that the transfer speed is adjustable.3. The evaporator of claim 2 , wherein:the source material is in a form of grains; andeach feeding member comprises a dispenser, configured to adjustably dispense the grains of the source material to allow the source material to be transferred to the heating member.4. The evaporator of claim 3 , wherein the dispenser comprises a vane wheel claim 3 , configured to rotate to thereby dispense the grains of the source material for transferring to the heating ...

Method for supplying deposition material, method for producing substrate, control device and deposition device

Provided is a method for supplying a deposition material including a heating step of heating and evaporating a deposition material accommodated in a material accommodating section in which the deposition material is accommodated, a supply step of supplying the deposition material into the material accommodating section by feeding and melting a deposition material in a solid phase toward the melted deposition material in the material accommodating section, and a melted state detection step of detecting a melted state of the deposition material in the solid phase after supply in the supply step.

METHOD FOR MONITORING SE VAPOR IN VACUUM REACTOR APPARATUS

Methods and systems are disclosed for monitoring vapor in a vacuum reactor apparatus. An system has (a) a vacuum chamber, (b) a vapor source housed in the vacuum chamber, wherein the vapor source is configured to generate a vapor, (c) a reaction vessel housed in the vacuum chamber and coupled to the vapor source, where the reaction vessel has an outlet to the vacuum chamber, and where the reaction vessel is configured to receive the vapor from the vapor source and to emit a portion of the received vapor into the vacuum chamber through the outlet, and (d) one or more sensors housed in the vacuum chamber, where the one or more sensors are configured to detect the vapor emitted through the outlet. 1. A system , comprising:a vacuum chamber;a vapor source housed in the vacuum chamber, wherein the vapor source is configured to generate a vapor;a reaction vessel housed in the vacuum chamber and coupled to the vapor source, wherein the reaction vessel has an outlet to the vacuum chamber, and wherein the reaction vessel is configured to receive the vapor from the vapor source and to emit a portion of the received vapor into the vacuum chamber through the outlet; andone or more sensors housed in the vacuum chamber, wherein the one or more sensors are configured to detect the vapor emitted through the outlet.2. The system of claim 1 , further comprising a valve configured to control an amount of the vapor received by the reaction vessel from the vapor source.3. The system of claim 2 , wherein the valve is configured to control the amount of the vapor in response to one or more control signals.4. The system of claim 1 , wherein the vapor source contains a vacuum-compatible material claim 1 , and the vacuum-compatible material comprises selenium.5. The system of claim 1 , wherein the sensor comprises a microbalance claim 1 , an ion gauge or a selenium rate monitor.6. The system of claim 1 , wherein the vapor source has a first pressure claim 1 , the reaction vessel has a second ...

PVD Coatings with a HEA Ceramic Matrix with Controlled Precipitate Structure

The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure. 122-. (canceled)23. A PVD coating process for producing a multifunctional coating structure comprising the steps of:Producing a HEA ceramic matrix on a substrate,Targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.24. The PVD coating process according to claim 23 ,wherein the selective introduction of a controlled precipitate structure takes place via a thermal treatment.25. The PVD coating process according to claim 23 ,wherein a variation of the selective introduction of a controlled precipitate structure takes place by varying at least the treatment time or the treatment temperature.26. The PVD coating process according to claim 23 ,wherein only a few nm is heated directly in the HEA ceramic matrix layer by means of the thermal treatment.27. The PVD coating process according to claim 23 ,wherein the targeted introduction of the controlled precipitate structure into the HEA ceramic matrix takes place in situ during the production of the HEA ceramic matrix.28. The PVD coating process according to claim 27 ,wherein the controlled precipitate structure is introduced into the HEA ceramic matrix by means of an instantaneous heating source for heating the surface of the HEA ceramic matrix to a temperature of between 900 and 1000° C. within a few seconds.29. The PVD coating process according to claim 23 ,wherein the targeted introduction of the controlled precipitate structure into the HEA ceramic matrix takes place after the production of the HEA ceramic matrix.30. The PVD coating process according to claim 23 ,wherein the HEA matrix is ...

EVAPORATOR BOAT CONTROL SYSTEM, PVD MACHINE AND METHOD OF OPERATING THE PVD MACHINE

The invention relates to a system for controlling evaporator boats, having a fixture () for receiving a plurality of evaporator boats (), an energy source () for providing energy for heating each of the evaporator boats (), a supply wire drive () for each of the evaporator boats (), at least one camera () adapted for capturing an image of at least one of a plurality of evaporator boats () mounted in the fixture (), and a control (), the control () having an image analyzation module () and being adapted for providing a control signal for the supply wire drive () and a control signal for the energy source (), the control signals depending at least in part from an output of the image analyzation module (). The invention further relates to a PVD machine and to a method of operating the machine. 1. A system for controlling evaporator boats , the system comprising:a fixture for receiving a plurality of evaporator boats;an energy source for providing energy for heating each of the plurality of evaporator boats;a supply wire drive for each of the plurality of evaporator boats;at least one camera adapted for capturing an image of at least one of the plurality of evaporator boats mounted in the fixture; anda controller having an image analyzation module, the controller being configured to:provide a first control signal for the supply wire drive; andprovide a second control signal for the energy source, the first control signal and the second control signal depending at least in part from an output of the image analyzation module.2. The system of claim 1 , wherein the at least one camera captures the image of a plurality of the plurality of evaporator boats.3. The system of claim 1 , further comprising: a light filter.4. The system of claim 1 , wherein the controller is further configured to provide a third control signal for a transport speed of a substrate to be deposited.5. A PVD machine comprising:a web supply,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a system for ...

THERMAL EVAPORATION SOURCES FOR WIDE-AREA DEPOSITION

A thermal evaporation sources are described. These thermal evaporation sources include a crucible configured to contain a volume of evaporant and a vapor space above the evaporant.

APPARATUS FOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Disclosed are an apparatus for and a method of manufacturing a semiconductor device, The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum, pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporator. 1. An apparatus for manufacturing a semiconductor device , the apparatus comprising:a chamber;an evaporator evaporating an organic source to produce a source gas and providing the source gas to a substrate within the chamber;a vacuum pump pumping the source gas and air from the chamber;an exhaust line establishing a fluid path between the vacuum pump and the chamber; andan analyzer connected to the exhaust line, the analyzer detecting a derived molecule produced from the organic source and determining a time to replace the evaporator.2. The apparatus of claim 1 , wherein the vacuum pump includes:a low vacuum pump; anda high vacuum pump generating a higher level of vacuum than the low vacuum pump, the high vacuum pump disposed between the low vacuum pump and the chamber,wherein the analyzer is disposed between the high vacuum pump and the chamber.3. The apparatus of claim 2 , wherein the exhaust line includes:a roughing line establishing a fluid path between the low vacuum pump and the chamber; anda foreline extending in parallel to the roughing line, the foreline establishing a fluid path between the high vacuum pump and the chamber, wherein a first foreline that establishing a fluid path between the high vacuum pump and the chamber; and', 'a second foreline extending in parallel to the first foreline, the second foreline establishing a fluid path between the analyzer and the chamber., 'the foreline includes4. The apparatus of claim 3 , further comprising:a ...

MATERIAL DEPOSITION ARRANGEMENT, VACUUM DEPOSITION SYSTEM AND METHOD THEREFOR

A material deposition arrangement for depositing a material on a substrate in a vacuum deposition chamber is described. The material deposition arrangement comprises at least one material deposition source having a crucible configured to evaporate the material, a distribution assembly connected to the crucible, wherein the distribution assembly is configured for providing the evaporated material to the substrate, and a valve configured to control a flow of the evaporated material from the crucible to the distribution assembly. 1. A material deposition arrangement for depositing a material on a substrate in a vacuum deposition chamber , comprising: a crucible configured to evaporate the material; and', 'a distribution assembly connected to the crucible, wherein the distribution assembly is configured for providing the evaporated material to the substrate; and, 'at least one material deposition source havinga valve configured to control a flow of the evaporated material from the crucible to the distribution assembly.2. The material deposition arrangement according to claim 1 , wherein the valve comprises a shutter connected to an actuator arrangement claim 1 , wherein the actuator arrangement is at least partially arranged in an interior space of the distribution assembly.3. The material deposition arrangement according to claim 2 , wherein the actuator arrangement comprises an actuator and a movable element claim 2 , wherein the movable element extends through the interior space of the distribution assembly.4. The material deposition arrangement according to claim 3 , wherein the movable element is an elongated element extending from at least a valve casing to at least an upper wall of the interior space of the distribution assembly.5. The material deposition arrangement according to claim 3 , wherein the valve comprises a bellows configured to prevent evaporated material from entering the actuator arrangement.6. The material deposition arrangement according to claim ...

MONOMER VAPORIZING DEVICE AND METHOD OF CONTROLLING THE SAME

A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber. 116-. (canceled)17. A method of controlling a monomer vaporizing device , the method comprising:supplying a monomer to at least one of a first vaporizer and a second vaporizer;vaporizing the monomer by heating at least one of the first vaporizer and the second vaporizer;measuring at least one of a temperature and a pressure of the first vaporizer while first supplying the monomer vaporized by the first vaporizer to a deposition chamber; andblocking the exit of the monomer from the first vaporizer based on at least one of the measured temperature and the measured pressure of the first vaporizer, and, if the exit of the monomer from the first vaporizer is blocked, supplying the monomer vaporized by the second vaporizer to the deposition chamber.18. The method of claim 17 , the blocking of the exit of the monomer from the first vaporizer comprising blocking the exit of the monomer from the first vaporizer when the pressure of the first vaporizer exceeds a first set pressure range which is preset.19. The method of claim 17 , the supplying of the monomer vaporized by the second vaporizer to the deposition chamber comprising supplying the monomer vaporized ...

PROCESSING TOOL HAVING A MONITORING DEVICE

Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed. 1. A monitoring device , comprising:a micro sensor having a sensor surface for aligning with a hole of a process chamber liner wall along a sensor axis, and a parameter that changes when material is removed from the sensor surface, wherein the micro sensor can be selectively exposed to a chamber volume of a process chamber, wherein the monitoring device detects the parameter that changes when the micro sensor is selectively exposed to the chamber volume of the process chamber, and wherein the monitoring device is configured to alternatingly selectively expose the micro sensor and a blank seal to the chamber volume of the process chamber by rotating both the micro sensor and the blank seal.2. The monitoring device of claim 1 , further comprising an end face having a recess claim 1 , wherein the micro sensor is mounted in the recess.3. The monitoring device of claim 2 , further comprising a sensor seal mounted on the end face claim 2 , wherein the sensor seal extends around the recess claim 2 , and wherein the sensor surface ...

Physical vapor deposition chamber with target surface morphology monitor

A sputtering system includes a vacuum chamber, a power source having a pole coupled to a backing plate for holding a sputtering target within the vacuum chamber, a pedestal for holding a substrate within the vacuum chamber, and a time of flight camera positioned to scan a surface of a target held to the backing plate. The time of flight camera may be used to obtain information relating to the topography of the target while the target is at sub-atmospheric pressure. The target information may be used to manage operation of the sputtering system. Managing operation of the sputtering system may include setting an adjustable parameter of a deposition process or deciding when to replace a sputtering target. Machine learning may be used to apply the time of flight camera data in managing the sputtering system operation.

Material Deposition Arrangements, Vacuum Deposition Systems, and Methods Thereof

A material deposition arrangement 100 for depositing material on a substrate in a vacuum deposition chamber is described. The material deposition arrangement includes at least one material deposition source, the at least one material deposition source comprising a crucible 110 configured to evaporate material, a dispensing assembly 120 connected to the crucible, wherein the dispensing assembly substrates the evaporated material. And a valve 130 configured to control the flow of evaporated material from the crucible 110 to the dispensing assembly 120.

Film forming apparatus

An object of the present invention is to provide a film forming apparatus capable of continuously and stably forming a polyimide film to be formed by polymerization reaction of a raw material gas by preventing fluctuation of a supply amount of a raw material gas. A film forming apparatus for forming a polyimide film on a substrate, comprising: a first vaporizer (21) for supplying a first source gas to a substrate; a second vaporizer (41) for supplying a second source gas to the substrate; A first pressure measuring section Ml for measuring a pressure inside the vaporizer, a second pressure measuring section M11 for measuring a pressure inside the second vaporizer, 1 based on the second data measured by the second pressure measuring unit M11, calculates the supply amount of the second raw material gas, and calculates the supply amount of the first raw material gas And a controller 60 for controlling the first vaporizer 21 and the second vaporizer 41 so that the calculated supply amounts of the second raw material gas become constant.

Film forming apparatus, film forming method and manufacturing method of electronic device

본 발명의 성막장치는, 진공용기와, 상기 진공용기내에 설치되며, 각각이 복수의 도가니를 포함하는 복수의 증발원과, 상기 복수의 증발원 중 제1 증발원의 제1 위치를 향하도록 설치된 제1 성막 레이트 측정부와, 상기 제1 증발원의 제2 위치를 향하도록 설치된 제2 성막 레이트 측정부와, 상기 제1 위치에 대응하는 위치에 설치된 제1 가동식 개폐수단과, 상기 제2 위치에 대응하는 위치에 설치되며, 상기 진공용기에 고정되도록 설치되는 제1 커버수단을 포함하며, 상기 제1 위치와 상기 제1 성막 레이트 측정부와의 사이의 제1 거리가, 상기 제2 위치와 상기 제2 성막 레이트 측정부와의 사이의 제2 거리보다 큰 것을 포함한다. The film forming apparatus of the present invention comprises a vacuum container, a plurality of evaporation sources installed in the vacuum container, each of which includes a plurality of crucibles, and a first film forming apparatus installed to face a first position of a first evaporation source among the plurality of evaporation sources. A rate measurement unit, a second film formation rate measurement unit installed to face a second position of the first evaporation source, a first movable opening/closing means installed at a position corresponding to the first position, and a position corresponding to the second position And a first cover means installed to be fixed to the vacuum container, wherein a first distance between the first position and the first film forming rate measuring unit is the second position and the second film forming unit. It includes a thing greater than the second distance between the rate measurement unit and.

Apparatus for supplying deposition source and method for operating that

본 발명은 증착소스 공급장치 및 이의 구동방법에 관한 것으로, 증착소스가 수용되는 공간을 형성하는 수용부, 상기 수용부의 외측에 설치되어 상기 수용부를 가열하는 복수개의 히터, 상기 히터에 의해 기화된 증착소스가 증착 공간으로 공급되는 분사부, 상기 수용부의 측벽을 따라 수직 방향으로 배치되며, 해당 위치의 온도를 감지하는 복수개의 온도 센서 그리고, 상기 복수개의 온도 센서에서 감지된 온도에 근거하여 상기 수용부에 수용된 증착소스의 양을 감지하는 검출부를 포함하는 증착소스 공급장치 및 이의 구동방법을 제공한다.

Thin film thickness control deposition system for improving thin film uniformity

PURPOSE: A thin film deposition apparatus for improve the accuracy of the thickness control of a thin film is provided to allow a measurement sensor to accurately monitor and measure the injection amount of deposition materials. CONSTITUTION: A thin film deposition apparatus for improve the accuracy of the thickness control of a thin film comprises a distribution pipe(103), multiple injection nozzles(104), one or more measurement nozzles(204), nozzle caps, a measurement sensor(207), and a chopper. The distribution pipe has multiple inlets. The injection nozzles are connected to the inlets of the distribution pipe and inject deposition materials in a direction. The measurement nozzles inject deposition materials in the other direction. The nozzle caps are detachably formed in the injection nozzles. The measurement sensor is formed in a horizontal line to the measurement nozzles. The chopper is formed between the measurement nozzles and the measurement sensor and controls the flow rate of the deposition materials.

OLED evaporation system using shutter rotation for continuous deposition process

본 발명은 진공을 유지한 상태에서 장시간 연속 증착이 가능한 유기 박막 증착기에 대한 것으로, 증발원 셔터(40)와 회전 셔터(50)를 포함하는 구조 장치의 발명이다. 증착의 경우 기울임 증발원(30)을 이용 비스듬히 증착을 하여 증착 균일도와 물질 사용률을 좋게 하였으며, 증착중인 증발원의 유기물이 고갈될 즈음 미리 예열 및 증착률 조절시 다른 증발원이나 기판(10)의 오염 방지와 공정 시간을 줄이기 위해 셔터의 회전을 이용하여 여닫는 증착 공정을 함으로써 연속 증착이 가능하게 하는 것이다. 또한 구간 나눔막(70)을 설치하여 유기물 기체가 다른 증발원이나 기판에 오염되는 것을 방지하는 것을 특징으로 하고, 회전이 가능한 유기물 증발 속도 감지 센서(80)를 설치하여 센서의 수명을 연장하고 교환 주기를 늘릴 수 있는 것을 특징으로 한다. The present invention relates to an organic thin film evaporator capable of continuous deposition for a long time while maintaining a vacuum, and is an invention of a structural device including an evaporation source shutter 40 and a rotary shutter 50. In the case of deposition, the slant evaporation source 30 was used to be deposited at an angle to improve deposition uniformity and material utilization rate. In order to reduce the process time, continuous deposition is possible by opening and closing the deposition process using the rotation of the shutter. In addition, it is characterized by preventing the organic gas from being contaminated with other evaporation sources or substrates by installing the section dividing film 70, and by installing a rotatable organic material evaporation rate detection sensor 80 to extend the life of the sensor and replacement cycle Characterized in that can be increased. 증착 장치, 진공 증착법, 유기 EL, 증발원, 회전 셔터 Evaporation apparatus, vacuum evaporation method, organic EL, evaporation source, rotary shutter

Source for thermal physical vapour deposition of organic electroluminescent layers

Apparatus for measuring evaporation rate of deposition source

단위 시간당 피증착체에 증착되는 증착물질의 양을 보다 정밀하게 측정할 수 있는 증착물질의 증발율 측정장치가 개시된다. 상기한 증착물질의 증발율 측정장치는 진공챔버 내부에 설치되며, 증착물질을 기화시키는 기화용기;와, 이송관을 통해 상기 기화용기에 연결되며, 피증착체를 냉각된 상태로 유지하여 기화된 증착물질이 피증착체에만 증착되도록 구성된 증착부; 및 상기 기화용기와 상기 증착부를 연결하는 이송관에 연결되며 고온에서 개폐 가능한 밸브유닛;을 포함하되, 상기 증착부는, 내부공간에 상기 피증착체를 구비하고, 기화된 증착물질을 외부에서 유입하는 증착부 하우징;을 구비하고, 상기 기화용기는, 상기 증착부 하우징의 외부에 배치되어 상기 증착부 하우징과 분리되게 구비될 수 있다. 이러한 증착물질의 증발율 측정장치에 의하면, 냉각수단에 연결된 피증착체홀더를 통해 피증착체를 냉각시킨 상태에서 증착물질을 피증착체에 증착시킬 수 있으므로, 기화된 증착물질이 피증착체에만 증착될 수 있고, 이에 따라 증착물질의 증발율을 정량적으로 측정할 수 있다. 증착, PVD, 피증착체, 냉각

Apparatus of molecular beam epitaxy effusion cell

진공 박막 증착용 분자빔 증발원이 개시된다. 본 발명에 따른 진공 박막 증착용 분자빔 증발원은, 증발 물질이 담기며, 중공 형태의 지지부를 갖는 도가니; 및 지지부의 내부에 삽입 설치되며 도가니에 담긴 증발 물질을 증발시키는 열을 발생시키는 열선; 을 포함하며, 지지부는 도가니의 둘레를 따라 복수 개로 마련되고, 적어도 하나의 지지부에는 열선이 삽입된다.

Multi-nozzle crucible assembly for OLED deposition process

본 발명은 유기 박막 소자의 증착 공정용 증발소스 내에서 사용되는 도가니 장치에 관한 것으로서 특히, 도가니를 가열하여 도가니 내에 담긴 유기 물질을 증발하여 대면적의 기판에 증착시켜 유기 박막을 제작함에 있어서, 증발되는 유기 물질을 기판에 균일하게 증착시키기 위하여, 유기 증발 물질의 증발 방향과 증발 양을 제어하는 멀티 노즐부(40)와, 상측이 개구된 원통형 도가니(50)가 결합되어 구성되어, 특히 대면적 기판의 유기박막 제작 시에 기판에 증착되는 유기물 박막의 두께의 균일성을 더욱 향상시키고, 유기물질의 사용율을 높이기 위한 것이다. The present invention relates to a crucible apparatus used in an evaporation source for an evaporation process of an organic thin film device. In particular, in the manufacture of an organic thin film by heating a crucible and evaporating organic substances contained in the crucible to a large-area substrate, evaporation is performed. In order to uniformly deposit the organic material on the substrate, the multi-nozzle part 40 for controlling the evaporation direction and the amount of evaporation of the organic evaporation material and the cylindrical crucible 50 having the upper side are combined and constituted, in particular, a large area. In order to further improve the uniformity of the thickness of the organic material thin film deposited on the substrate during fabrication of the organic thin film of the substrate, and to increase the use rate of the organic material. 멀티 노즐, 도가니, 유기 박막 Multi nozzle, crucible, organic thin film

Deposition apparatus and operating method thereof

본 발명은 증착장비 및 이의 동작방법에 관한 것이다. 본 발명에 따른 증착장비는 서로 다른 측벽 두께를 가지며 내부에 증착물이 충진된 도가니와, 상기 도가니를 감싸 두르는 가열수단 및 상기 가열수단의 발열온도를 제어하는 제어부를 포함한다. 이를 통해 도가니 내부의 증착물 잔량을 확인할 수 있게 된다. The present invention relates to a deposition equipment and a method of operation thereof. The deposition equipment according to the present invention includes a crucible having different sidewall thicknesses and filled with a deposition material therein, a heating means surrounding the crucible, and a control unit controlling a heating temperature of the heating means. Through this, it is possible to check the remaining amount of deposits inside the crucible.

Method and apparatus for coating a substrate in a vacuum

실질적으로 종방향의 배출 요소를 갖는 재료원이 기판과 재료원 사이의 도달 거리를 증가시키지 않고 기판의 표면을 도포하는 실질적으로 종방향인 증착 배출 플롬을 형성하기 위해서 사용되는 진공 상태에서 기판의 표면에 증착 물질을 도포하는 방법 및 장치가 개시된다. The surface of the substrate in a vacuum state where a material source having a substantially longitudinal discharge element is used to form a substantially longitudinal deposition discharge plume that applies the surface of the substrate without increasing the reach between the substrate and the material source. A method and apparatus for applying a deposition material to a substrate is disclosed.

Deposition apparatus

본 발명은 도가니에 존재하는 증착 원료의 잔량을 보다 정확하게 측정하는 증착 장치를 제공하기 위한 것으로, 증착 원료가 충전되며, 증착 원료에서 증발된 증착 물질을 안내하는 노즐을 갖는 도가니, 도가니를 가열하기 위한 열을 방출하는 히터 유닛과, 히터 유닛이 장착되는 히터 프레임을 포함하는 히터부, 히터부의 외측에 배치되는 냉각부, 도가니, 히터부, 냉각부가 수용되는 증착 공간이 형성된 챔버, 및 도가니의 무게를 측정하는 무게측정모듈을 포함하고, 히터 프레임에는 도가니가 안착되는 안착부가 형성될 수 있다. The present invention is to provide a deposition apparatus for more accurately measuring the remaining amount of the deposition material present in the crucible, the deposition material is filled, the crucible having a nozzle for guiding the deposition material evaporated from the deposition material, for heating the crucible. A heater unit that emits heat, a heater unit including a heater frame in which the heater unit is mounted, a cooling unit disposed outside the heater unit, a crucible, a heater unit, a chamber in which a deposition space accommodating the cooling unit is formed, and the crucible are weighed. It includes a weighing module to measure, and a seating portion on which the crucible is seated may be formed on the heater frame.

Vacuum vapor deposition apparatus

도가니는 기화실의 전체 영역에 형성되는 일체식 구조이며, 그 상부면에 제공된 하나 이상의 슬릿형 홈을 갖는다. 하나 이상의 슬릿형 홈은 도가니의 상부면의 일단부로부터 타단부까지의 길이를 갖는다. 하나 이상의 슬릿형 홈은 증착재 (도핑재 등) 를 포함하는 부분으로서 사용된다. 선택적으로, 도가니는 기화실의 전체 영역에 형성되는 일체식 구조이며, 그 상부면에 제공된 복수 개의 구멍들을 갖는다. 이 구멍들은 증착재를 포함하는 부분으로서 사용된다. 또한, 도가니는 복수 개의 부분으로 나뉘며, 이 각 영역에 개별 전기 히터가 도가니의 하부면 아래에 제공되며, 이에 의해 전기 히터에 의해 각 영역의 온도가 개별적으로 제어될 수 있다. The crucible is an integral structure formed in the entire area of the vaporization chamber and has one or more slit grooves provided in its upper surface. The one or more slit-shaped grooves have a length from one end to the other end of the upper surface of the crucible. One or more slit-shaped grooves are used as the portion containing the deposition material (doping material, etc.). Optionally, the crucible is an integral structure formed in the entire area of the vaporization chamber and has a plurality of holes provided in its upper surface. These holes are used as the part containing the deposition material. In addition, the crucible is divided into a plurality of parts, in which respective electric heaters are provided below the bottom surface of the crucible, whereby the temperature of each area can be individually controlled by the electric heater.

Ebpvd columnated vapor stream

An electron beam vapor deposition process for depositing coatings includes placing a source coating material (34) in a crucible (32) of a vapor deposition apparatus; energizing the source coating material (34) with an electron beam raster pattern that delivers a controlled power density to the material (34) in the crucible (32) forming a vapor cloud (42) from the source coating material (34); and depositing the source coating material (34) onto a surface of a work piece (12).

Cabinet for solid material containers

Equipment for vaporing organic material and method for vaporing organic material, and apparatus for use in depositing organic material with it

An organic material evaporator and an organic material evaporating method which can extend the service time of the organic material evaporator by replenishing an organic material during the organic material depositing process, and can reduce maintenance and repairing operations for replacing the organic material evaporator, and an organic material depositing apparatus with the organic material evaporator are provided. An organic material evaporator(200) comprises: an organic material evaporating chamber(210) in which an organic material is stored, and which heats the stored organic material to evaporate the organic material onto a treatment surface of a substrate; and an organic material replenishing chamber(230) disposed adjacently to the organic material evaporating chamber to replenish an organic material into the organic material evaporating chamber. The organic material replenishing chamber comprises a supporting plate(236a) which supports the pressed organic materials such that pressed organic materials are vertically stacked, and which can be driven vertically. The organic materials are formed in such a shape that an upper surface and a lower surface of the organic materials are parallel to each other. The supporting plate has an upper surface(236c) inclined downward in a direction facing the organic material evaporating chamber.

Atomic flux measurement device

A low-cost and compact atomic flux measurement device is provided for measuring the amount of dissociated atomic flux that are produced by discharge and are emitted from a plasma generation cell into a vacuum camber. The atomic flux measurement device of the present invention includes a counter electrode body including a pair of first and second sheet-like electrodes that are arranged substantially parallel to each other with a predetermined spacing between them, a direct-current power supply configured for two purposes that are to maintain the first sheet-like electrode at a negative potential so that atoms attached to the inner surface of the sheet-like electrode undergo self-ionization and to apply a direct-current voltage between the first and second sheet-like electrodes so that a current flows between the first and second sheet-like electrodes, and a direct-current ammeter configured to measure a current flowing due to electrons emitted by the self-ionization of the dissociated atoms attached to the inner surface of the first sheet-like electrode.

Apparatus and method for measuring vapor concentration

本發明係有關於一種用於測定一容積(2)內的蒸氣之分壓或濃度的裝置，具有感測器體(5)，感測器體可發生振盪且可被調溫至低於蒸氣之冷凝溫度的溫度，其振盪頻率受冷凝蒸氣在感測器表面(6)所形成的質量累積影響，其中，設有用於產生氣體流之構件，氣體流自感測器表面(6)穿過鄰接於通往容積(2)之窗口(3)的蒸氣運送通道(20)而流向容積(2)。為了從工藝技術角度改良裝置，且特別是延長感測器體之最長使用壽命，本發明提出：用於產生氣體流之構件具有建構為環形通道(16)之寬縫噴嘴。

External selenium source structure of CIGS co-evaporation method

本发明涉及一种CIGS共蒸法的硒源外置式结构，解决CIGS共蒸法的各元素蒸发源蒸发温度高低差异大，铜源、铟镓合金源的高温辐射对硒源相邻侧的温度产生影响，会导致硒源蒸发不稳定，影响产品质量的问题。本装置包括真空腔，真空腔内设有待镀膜的基底，其特征在于：所述基底下方设置有硒源、铜源、铟源、镓源，所述硒源为设置在真空腔下方外侧的外置硒源，真空腔下壁通过硒蒸气导向管连接外置硒源，所述硒蒸气导向管沿输送方向设置若干加热电极，硒蒸气导向管的外侧包绕隔热层。本发明外置硒源不会受到铜源、铟源、镓源的辐射热影响，可以精准控温，蒸汽羽流稳定，同时，外置硒源方便硒源的添加和用量控制，也方便未用完的硒源回收。

Evaporation system with measurement unit

An evaporation system for applying vapor to a substrate in a vacuum chamber at a coating rate comprises a distribution pipe with an inlet for receiving the vapor; an evaporation section having a first outlet for applying the vapor to a substrate, the evaporation section defining a first fluidal path for the vapor to go from the inlet to the first outlet; a measurement section having a second outlet for displacing the vapor from the measurement section, the measurement section defining a second fluidal path for the vapor to go from the inlet to the second outlet; and a light sensitive detector for measuring at least one characteristic property of the vapor in the measurement section. Further, a vacuum chamber including an evaporation system is disclosed, and a method for measuring the application rate of a vapor.

Evaporation source for deposition of evaporated material on a substrate, deposition apparatus, method for measuring a vapor pressure of evaporated material, and method for determining an evaporation rate of an evaporated material

An evaporation source for deposition of evaporated material on a substrate is described. The evaporation source including a crucible for material evaporation; a distribution assembly with one or more outlets for providing the evaporated material to the substrate, the distribution assembly being in fluid communication with the crucible; and a measurement assembly. The measurement assembly includes a tube connecting an interior space of the distribution assembly with a pressure sensor.

Deposition amount measuring apparatus, depositing apparatus including the same, and method for manufacturing light emitting display

A deposition amount measuring apparatus includes a plate-shaped body having a rotating shaft, a plurality of deposition amount sensors along side surfaces of the body, the deposition amount sensors being configured to measure an amount of deposition material, and a housing surrounding the body, the housing including an inflow port that exposes one of the deposition amount sensors.

Vacuum vapor desposition apparatus

A crucible is a monolithic structure extending over an entire area of a vaporizing chamber and has at least one slit groove provided in the upper surface thereof. The at least one slit groove has a length from one end of the upper surface of the crucible to other end thereof. The at least one slit groove is used as a portion for containing the evaporation material (dopant material or the like). Alternatively, a crucible is a monolithic structure extending over the entire area of the vaporizing chamber and has a plurality of holes provided in the upper surface thereof. The holes are used as portions for containing the evaporation material. Further, the crucible is divided into a plurality of regions, and individual electric heaters are provided under the lower surface of the crucible for the respective regions, whereby temperature can be individually controlled for the respective regions by the electric heaters.

Method for determining process-significant data of a vacuum deposition process and its further processing in measurement or control processes

Verfahren zur Ermittlung prozesssignifikanter Daten eines Vakuumabscheideprozesses und deren Weiterverarbeitung in Mess- oder Regelungsprozessen, bei dem ein Substrat in einer Vakuumkammer mittels eines aus einem mit einem Magnetron verbundenen Target herausgelösten Materials unter Anlegen einer von einer geregelten Spannungsquelle bereitgestellten Targetspannung zwischen dem Target und einer Gegenelektrode und unter Einleitung eines Prozessgases in die Vakuumkammer in einem Prozessraum beschichtet wird, wobei ein optisches Emissionsspektrum aufgenommen wird und aus Intensitäten von Spektrallinien der an dem Beschichtungsprozess beteiligen Prozessmaterialien, prozesssignifikante Daten des Vakuumabscheideprozesses zur Weiterverarbeitung in Mess- oder Regelungsprozessen ermittelt werden, dadurch gekennzeichnet, dass von mindestens zwei Prozessmaterialen in situ mindestens drei Intensitäten I1...I3 von mehreren Spektrallinien (11 bis 15) aus dem in situ aufgenommenen optischen Emissionsspektrum (10) ermittelt werden, dass aus einem Paar der Intensitäten I1...I3 mit einer ersten mathematischen Verknüpfung eine erste Relativintensität R1 berechnet wird, dass aus einem anderen Paar der Intensitäten I1...I3 mit einer zweiten mathematischen Verknüpfung eine zweite Relativintensität R2 berechnet wird, und dass aus der ersten Relativintensität R1 und der zweiten Relativintensität R2 mit einer dritten mathematischen Verknüpfung eine Intensitätsverknüpfung IV als prozesssignifikantes Datum berechnet wird. Method for determining process-significant data of a vacuum deposition process and its further processing in measurement or control processes, in which a substrate in a vacuum chamber by means of a material released from a target connected to a magnetron, applying a target voltage provided by a regulated voltage source between the target and a counter electrode and under the introduction of a process gas into the vacuum chamber is coated in a process space, wherein an optical ...

Apparatus for fabricating a semiconductor device with target sputtering and target sputtering method for fabricating the semiconductor device

The present disclosure provides an apparatus for fabricating a semiconductor device with target sputtering, including a chamber for accommodating a consumable target, a target accumulative consumption counter, wherein the target accumulative consumption counter provides a signal correlated to an amount of the consumable target being consumed, and a power supply communicates with the consumable target counter, wherein the power supply provides a power output according to the signal.

Evaporator, evaporation coating apparatus and evaporation coating method

An evaporator (10), an evaporation coating apparatus, and a method of evaporation coating are provided. The evaporator (10) comprises at least one feeding member (11) and a heating member (12). Each feeding member (11) is configured to transfer a source material in a transfer speed that is adjustable, and the heating member (12) is configured to heat the source material transferred by the feeding member (11) for evaporation to thereby generate a source material vapor. Besides the evaporator (10), the evaporation coating apparatus further includes a coating chamber (43), an object holder (41), and a controller configured to control the transfer speed, wherein the evaporator (10) and the object holder (41) are both disposed inside the coating chamber (43), the object holder (41) is configured to provide a platform for placing an object to be coated thereon, and the coating chamber (43) is configured to provide an environment for the source material vapor vented out from the evaporator (10) to attach to the object to thereby form a film of the source material onto the object.

Manufacture of magnetic recording medium

Source for thermal physical vapour deposition of organic electroluminescent layers

The present invention disclosed the deposition source installed in a chamber, heated by applied electric power to transfer heat to a vapor deposition material received therein and applying a vaporized deposition material generated therein to a substrate to form deposition organic electroluminescent layers onto the substrate, and comprising a vessel consisted of a top plate on which a vapor efflux aperture is formed, a side wall, and a bottom wall; a heating means for supplying heat to the deposition material received in the vessel, the heating means being capable of moving vertically; and a means for moving the heating means (or the bottom wall), the moving means (or the bottom wall) being operated in response to the signal of a sensing means on varied distances between the heating means and the surface of said deposition material. Thus, the heating means is moved downward (or the bottom wall) is moved upward by the moving means to maintain the distance between the heating means (or the substrate to be coated) and the surface of the deposition material at an initially-set value when the thickness of the deposition material is decreased.

Apparatus and method for determining vapor concentration

本發明係有關於一種用於測定一容積(2)內的蒸氣之分壓或濃度的裝置，具有感測器體(5)，感測器體可發生振盪且可被調溫至低於蒸氣之冷凝溫度的溫度，其振盪頻率受冷凝蒸氣在感測器表面(6)所形成的質量累積影響，其中，設有用於產生氣體流之構件，氣體流自感測器表面(6)穿過鄰接於通往容積(2)之窗口(3)的蒸氣運送通道(20)而流向容積(2)。為了從工藝技術角度改良裝置，且特別是延長感測器體之最長使用壽命，本發明提出：用於產生氣體流之構件具有建構為環形通道(16)之寬縫噴嘴。

Deposition method

Monomer vaporizing device and method of controlling the same

A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

Atomic flux measurement device

Disclosed is a low-cost compact atomic flux measurement device for measuring flux of dissociated atoms generated by discharge, said flux being emitted from a plasma generation cell into a container. The disclosed atomic flux measurement device is configured with opposing electrodes configured by the pair of a first and a second sheet electrode separated by a prescribed interval and arranged roughly in parallel, a DC power source having two aims, one aim being to maintain the first sheet electrode at a negative potential and cause atoms attached to the inner surface of said sheet electrode to self-ionize, the other aim being to apply a DC voltage in order to create a current between the first and second sheet electrodes, and a DC ammeter which measures the current of the electrons emitted from the dissociated atoms due to self-ionization which are attached to the inner surface of the first sheet electrode.

Phase-change memory device

A phase-change memory device, including a lower electrode, a phase-change material pattern electrically connected to the lower electrode, and an upper electrode electrically connected to the phase-change material pattern. The lower electrode may include a first structure including a metal semiconductor compound, a second structure on the first structure, the second structure including a metal nitride material, and including a lower part having a greater width than an upper part, and a third structure including a metal nitride material containing an element X, the third structure being on the second structure, the element X including at least one selected from the group of silicon, boron, aluminum, oxygen, and carbon.

Thermal evaporation sources for wide-area deposition

A thermal evaporation source includes: a crucible configured to contain a volume of evaporant and a vapor space above the evaporant; a manifold body having within it a hollow expansion chamber that is flowably connected to the vapor space via one or more restriction orifices; one or more effusion nozzles flowably connected to the expansion chamber and exiting an outer surface of the thermal evaporation source, the nozzle(s) oriented to direct an evaporant vapor flow out of the source vertically downward, in one or more horizontal directions, or in one or more directions intermediate between horizontal and vertically downward; and a heater capable of heating some or all of the thermal evaporation source to a temperature sufficient to produce the one or more evaporant vapor flows when a vacuum is applied to the thermal evaporation source.

Storage device, vaporizer, substrate processing device and method for manufacturing semiconductor device

높은 생산성을 달성 가능한 처리 장치나 그것을 실현하기 위해서 이하의 구조를 제공한다. 즉, 주 형상으로 구성된 측벽; 상기 측벽의 상단측에 배치된 덮개벽; 상기 측벽의 하단측에 접속되는 것과 함께 중량 검지기 상에 재치 가능한 재치면을 포함하는 저벽; 상기 측벽과 상기 덮개벽과 상기 저벽으로 둘러싸인 저류실; 상기 저류실에 연통되는 것과 함께 상기 저벽에 설치된 요부; 일단이 상기 요부 중 중력 방향의 부위에 접속되고, 타단이 상기 저벽 내에서 중력 방향과는 다른 방향에 연장하도록 구성되는 연락관; 상기 저벽과 다른 벽에 설치되는 가스 유로; 및 상기 연락관의 하류단에 접속되는 액체 배출로;를 구비하고, 상기 측벽의 지름>상기 요부의 지름>상기 연락관의 지름>상기 액체 배출로의 지름이 되도록 구성되는 구조를 제공한다. A processing apparatus capable of achieving high productivity and the following structure are provided to realize it. That is, the side wall is configured as a main shape; A cover wall disposed on an upper side of the side wall; A bottom wall including a mounting surface mounted on the weight detector together with being connected to the lower side of the side wall; A storage chamber surrounded by the side wall, the cover wall, and the bottom wall; A main part installed on the bottom wall while communicating with the storage chamber; One end is connected to the portion of the gravity portion of the main portion, the other end is configured to extend in a direction different from the direction of gravity within the bottom wall; A gas flow path installed on a wall different from the bottom wall; And a liquid discharge path connected to a downstream end of the communication pipe. It provides a structure configured to have a diameter of the side wall>diameter of the main portion>diameter of the communication pipe>diameter of the liquid discharge path.

Device and method for determining the concentration of a vapor

A device for determining the partial pressure or the concentration of a steam in a volume, includes a sensor body that can be oscillated. The temperature of the sensor body can be controlled to a temperature below the condensation temperature of the steam, and the oscillation frequency of the sensor body is influenced by a mass accumulation of the condensed steam on a surface of the sensor body. Means are provided for generating a gas flow from the sensor surface in the direction of the volume through a steam transport channel that adjoins a window to the volume. In order to increase the maximum service life of the sensor body, the means for generating a gas flow has a slit nozzle designed as an annular channel.

Device and method for determining the concentration of vapor

본 발명은 센서 본체(5)를 포함하는, 체적(2)에서 증기의 부분 압력 또는 농도를 결정하기 위한 디바이스에 관한 것으로서, 센서 본체는 진동될 수 있고, 온도가 증기의 응축 온도 미만의 온도로 제어될 수 있으며, 진동 주파수가 센서 표면(6) 상의 응축된 증기의 질량 축적에 의해 영향을 받고, 여기서 센서 표면(6)으로부터, 체적(2)에 대한 윈도우(3)에 인접한 증기 수송 채널(20)을 통해 체적(2)의 방향으로 가스 유동을 발생시키기 위한 수단이 제공된다. 본 발명의 목적은 디바이스를 위한 방법을 개선시키고, 특히 센서 본체의 최대 서비스 수명을 증가시키는 것이다. 본 발명에 따르면, 이것은 가스 유동을 발생시키기 위한 수단이 환형 채널(16)로서 설계된 슬릿 노즐을 갖는다는 점에서 달성된다. The present invention relates to a device for determining the partial pressure or concentration of a vapor in a volume (2), comprising a sensor body (5), the sensor body being capable of being vibrated, to a temperature below the condensation temperature of the vapor. can be controlled, the vibration frequency being influenced by the mass accumulation of condensed vapor on the sensor surface 6, where from the sensor surface 6, the vapor transport channel adjacent to the window 3 to the volume 2 ( Means are provided for generating a gas flow in the direction of volume 2 through 20 . The object of the present invention is to improve a method for a device and in particular to increase the maximum service life of a sensor body. According to the invention, this is achieved in that the means for generating the gas flow have a slit nozzle designed as an annular channel 16 .

Evaporation system

本发明公开了蒸镀系统。该蒸镀系统包括：送料装置，所述送料装置包括：送料装置壳体，所述送料装置壳体内部限定出送料空间；进料口，所述进料口设置在所述送料装置壳体上；出料口，所述出料口设置在所述送料装置壳体上且远离所述进料口；推进单元，所述推进单元的至少一部分嵌入所述送料空间中，且用于推动所述送料空间中的原料由所述进料口向所述出料口移动；蒸发装置，所述蒸发装置与所述送料装置相连；以及储料装置，所述储料装置与所述送料装置的所述进料口相连。该蒸镀系统具有以下优点的至少之一：该蒸镀系统可以实现连续送料，进而提高生产效率，连续送料保证原料具有较好的一致性，无原料残留，且可以保持稳定的蒸发速率。

Vapor deposition equipment used to make high- efficiency chalcopyrite solar cells, employs automatically-controlled wire feed to introduce coating materials

The equipment vapor-deposits copper-indium diselenide or -sulfide (CIS), copper-indium gallium diselenide (CIGS) or copper-indium gallium sulfide diselenide (CIGSSe). The wire is made of Cu, In Ga, S, Se and/or any combination of them. It includes more than one component of the layer. It includes all components of the layer. Two wires may be used, each of which contain one or two components of the layer. Equipment provided, deposits components of the layer by flash vaporization. It supplies wire to a vaporization boat in a controlled manner. The deposition substrate is glass. By sequential deposition of components, a stack of layers is produced. Subsequently, when the substrate temperature is raised, these are alloyed. With simultaneous deposition of components, the layer produced is tempered during deposition. Alternatively tempering takes place later. The vaporization boat is heated to a temperature markedly above the highest individual boiling point of any component forming the semiconductor layer. All components of the wire are vaporized simultaneously. Deposition is effected using two or more wires; each includes one or two components of the layer. The rate of vaporization is controlled by the feed velocity of the wire. Control is provided by a closed-loop control circuit. An independent claim IS INCLUDED FOR the corresponding method of depositing the semiconductor layer.

Method and apparatus for coating a substrate in a vacuum

A method and apparatus for coating a substrate with a deposition material in a vacuum wherein a material source having a substantially longitudinal deposition emission component is used to create a substantially longitudinal material deposition emission plume which coats a surface of the substrate without increasing the throw distance between the substrate and the material source.

Evaporation rate measuring device, control method for evaporation rate measuring device, film forming device, film forming method, and method for manufacturing electronic device

Gasification system and storage medium storing program for gasification system

本发明提供气化系统和存储有气化系统用程序的存储介质，不使用压力传感器就能适当控制液体材料的供给。气化系统(100)包括：气化器(21)，使液体材料气化；供给量控制设备(22)，控制向气化器(21)供给的液体材料的供给量；流量调整阀(32)，调整气化器(21)生成的气化气体的流量；流量传感器，测定气化气体的流量；阀控制部(43)，向流量调整阀(32)输出驱动信号来控制阀开度，以使由流量传感器测定的测定流量成为预先设定的设定流量。还包括：驱动信号值取得部(44)，取得作为驱动信号所表示的值的驱动信号值；供给控制部(45)，基于驱动信号值向供给量控制设备(22)输出控制信号，控制液体材料的供给。

Evaporator, deposition arrangement, deposition apparatus and methods of operation thereof

描述用于蒸发包括碱金属或碱土金属的材料及用于沉积所述材料于基板上的沉积装置。所述装置包含：第一腔室，所述第一腔室被配置以液化材料；阀，所述阀与第一腔室流体连通且在第一腔室下游，其中阀被配置以控制液化材料通过阀的流率；蒸发区，所述蒸发区与阀流体连通且在阀下游，其中蒸发区被配置以蒸发液化材料；及一或更多出口，所述一或更多出口用于将蒸发材料导向基板。

Processing tool having a monitoring device

Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

EBPVD columnated vapor stream

An electron beam vapor deposition process for depositing coatings includes placing a source coating material in a crucible of a vapor deposition apparatus; energizing the source coating with an electron beam raster pattern that delivers a controlled power density to the material in the crucible forming a vapor cloud from the source coating material; and depositing the source coating material onto a surface of a work piece.

Vacuum coating device

Provided is a vacuum coating device, comprising a crucible (13), an induction heater (15) arranged on the outer side of the crucible (13); a flow distribution box connected to the top of the crucible (13) through a steam pipeline (16); a pressure regulating valve (18) and a diverter valve (19) sequentially arranged in a direction in which the steam pipeline (16) is in communication with the flow distribution box; a horizontal pressure stabilizing plate (20) arranged in the flow distribution box, a plurality of sub-nozzles (21) connected to the top of the flow distribution box; wherein a plurality of air flow distribution chambers are arranged in the diverter valve (19); a ratio of a total area of the air flow distribution chambers (S distribution ) to an area of the steam pipeline (16) in the radial direction (S pipeline ) is greater than or equal to 0.1, i.e.: S diversion /S pipeline ≥0.1. According to the device, a uniform spray flow can be formed, a uniform coating (23) is formed on the surface of a steel plate (100) when high temperature steam is in contact with a low temperature steel plate, the spray flow formed by the sub-nozzles (21) arranged at the rear portion continuously covers the deposited metal layer that has been formed, so as to achieve efficient coating of strip steel under vacuum conditions.

Vacuum vapor deposition apparatus

In a vacuum vapor deposition apparatus including a plurality of linear-shaped vaporization sources, equal-thickness surfaces (19a, 19b) are calculated for vaporization containers (8a, 8b), respectively. Each of the equal-thickness surfaces (19a, 19b) indicates where a deposition amount of vapor of a vaporization material released from release holes (13a, 13b) in the corresponding vaporization container (8a, 8b) is the same per unit time. Then, the vaporization containers (8a, 8b) are placed in such a manner that contact points of the respective equal-thickness surfaces (19a, 19b) all coincide with each other on a deposition surface of a substrate (4), each of the contact points being where the corresponding equal-thickness surfaces (19a, 19b) come in contact with the deposition surface of the substrate (4).

Deposition apparatus

본 발명은 가열을 위한 히팅부를 포함하는 본체와 본체의 내부에 위치되어, 증착 재료를 수용하는 수용부와 수용부의 일부와 접촉되어, 히팅부에 의해서 가열된 증착 재료의 온도를 측정하는 증착 재료 온도측정부와 증착 재료 온도측정부의 일부와 전기적으로 연결되어, 증착 재료의 잔류량의 무게를 측정하는 증착 재료 잔류량측정부 및 증착 재료 온도측정부 및 증착 재료 잔류량측정부와 전기적으로 연결되어, 증착 재료의 온도와 증착 재료의 잔류량의 무게를 디지털 신호로 표시하는 표시부를 포함하는 증착 장치를 제공한다. 전계 발광 소자, 증착 장치, 증착 재료 잔류량측정부, 표시부

Use of plasma-activated electron beam vaporization with diffuse cathodic vacuum arc for coating substrates, controls operational parameters affecting layer thickness and its distribution

Das erfindungsgemäße Verfahren zur Beschichtung von Substraten durch plasmaaktivierte Elektronenstrahlverdampfung mit einem diffusen kathodischen Vakuumbogen, bei dem mindestens ein Elektronenstrahl abwechselnd auf mindestens zwei unterschiedliche Bereiche B¶N¶ (N = 1, 2, 3...M) mindestens eines Verdampfungsgutes gerichtet und in jedem Bereich B¶N¶ während einer vorgebbaren Verweilzeit t¶N¶ gehalten wird, ist dadurch gekennzeichnet, dass eine gewählte Schichtdicke oder/und Schichtdickenverteilung durch Regelung der Verdampfungsrate jedes Bereichs B¶N¶ in Abhängigkeit von der Bogenspannung U¶N¶(t) oder des Bogenstroms I¶N¶(t) des Vakuumbogens erreicht wird. DOLLAR A Überraschend wurde festgestellt, dass die Bogenspannung U¶N¶(t) des diffusen kathodischen Vakuumbogens ein Maß für die Verdampfungsrate des Verdampfers ist. Dies äußert sich darin, dass sich ein Wechsel des Auftrefforts des Elektronenstrahls auf dem Verdampfungsgut zwischen zwei Bereichen B¶1¶ und B¶2¶ bei unterschiedlichen Temperaturen in diesen Bereichen als Schwankung der Bogenspannung U¶N¶(t) abbildet. Es wurde beobachtet, dass die lokale Verdampfungsrate von der Bogenspannung U¶N¶(t) abhängig ist.

Evaporator, deposition arrangement, deposition apparatus and methods of operation thereof

A depositing arrangement for evaporation of a material is disclosed herein. The depositing arrangement has an alkali metal or alkaline earth metal for deposition of the material on a substrate. The deposition arrangement has a first chamber configured for liquefying the material; a valve being in fluid communication with the first chamber, and being downstream of the first chamber, wherein the valve is configured for control of the flow rate of the liquefied material through the valve. The deposition arrangement has an evaporation zone being in fluid communication with the valve, and being downstream of the valve, wherein the evaporation zone is configured for vaporizing the liquefied material; a heating unit to heat the material to higher temperatures before providing the liquid material in the evaporation zone; and one or more outlets for directing the vaporized material towards the substrate.

Method for manufacturing semiconductor element

一种半导体元件的制造方法，实施例是针对一种优化沉积在半导体处理腔室中的半导体基板上的目标材料膜的厚度的方法，其中半导体处理腔室包含位于半导体处理腔室上的磁性组件，磁性组件包含在磁性组件内的多个磁柱。方法包含：操作半导体处理腔室以在位于半导体处理腔室内的半导体基板上沉积目标材料膜；量测沉积膜的均匀性；调整一个或多个磁柱在磁性组件中的位置；及在调整一个或多个磁柱的位置之后，操作半导体处理腔室以沉积目标材料的膜。

Material deposition arrangement, vacuum deposition system and method therefor

A material deposition arrangement (100) for depositing a material on a substrate in a vacuum deposition chamber is described. The material deposition arrangement comprises at least one material deposition source having a crucible (110) configured to evaporate the material, a distribution assembly (120) connected to the crucible, wherein the distribution assembly is configured for providing the evaporated material to the substrate, and a valve (130) configured to control a flow of the evaporated material from the crucible (110) to the distribution assembly (120).

Vaporising device, evaporated device and evaporation coating method

本发明公开了一种蒸发装置、蒸镀设备和蒸镀方法，属于镀膜领域。蒸发装置包括：喂料组件和加热组件；喂料组件用于存储膜料并将膜料在n个连续的时间段内输送至加热组件，n为大于等于2的整数；加热组件用于在喂料组件将膜料在n个连续的时间段内输送至加热组件时，将喂料组件输送的膜料蒸发成为膜料蒸汽。本发明通过蒸发装置中的喂料组件将膜料在n个连续的时间段内输送至加热组件，使得加热组件中的膜料不会堆积过多，解决了相关技术中可能由于加热的不均匀造成部分膜料碳化，进而严重影响镀膜的正常进行的问题，达到了加热组件中加热的膜料较少，加热较为均匀，膜料不会发生碳化的效果，镀膜可以正常进行。

LIFT printing using thin donor foil

印刷设备包含施体供应组合件，其定位具有相对的第一及第二表面以及形成在所述第二表面上的施体膜的透明施体衬底，使得所述施体膜接近受体衬底上的目标区域。光学组合件引导激光辐射的一或多个光束穿过所述施体衬底的所述第一表面并照射所述施体膜，以便诱导材料从所述施体膜喷射到所述受体衬底上。提供用于减轻或补偿激光辐射跨所述施体衬底的区域的反射的变化的构件，以便使跨所述施体衬底的所述区域在所述施体膜中吸收的所述激光辐射的通量等化。

organic thin film forming Apparatus

본 발명은 유기박막 형성장치에 관한 것으로서, 진공실 내에 증발원을 설치하고, 상기 진공실의 천정부에 설치된 유리기판에 증발 또는 승화되는 유기재료를 증착하는 유기박막 형성장치에 있어서, 상기 증발원은, 상기 유기재료가 충전되는 통형의 도가니; 상기 도가니를 감싸 가열하는 가열부; 상면에 상기 도가니의 크기에 대응되는 개구부가 형성되고 상기 가열부를 감싸는 열차단부; 상기 열차단부의 상측에서 상기 개구부의 중앙에 설치되어 상기 도가니에서 증발 또는 승화되는 유기재료의 속도를 측정하는 측정부; 상기 열차단부의 개구부를 이분하여 폐쇄하는 한 쌍의 셔터와, 상기 셔터가 회동되도록 상기 셔터의 단부에 설치되는 힌지축과, 상기 측정부에서 측정된 값에 따라 상기 개구부의 중앙부터 개방되는 정도를 조절하도록 상기 힌지축에 연결되어 상기 셔터를 상호 대향되게 회동시키는 개폐수단을 포함한 개폐부; 를 일체로 포함하고, 상기 유리기판에 증착되는 유기재료의 종류에 따라 다수 개가 설치되는 것을 특징으로 한다. 이에 의하여, 증발원의 이동이 자유롭고, 셔터의 동작을 정밀하게 제어할 수 있으며, 셔터가 유리기판에 증착되는 유기재료의 두께를 정밀하게 제어할 수 있는 유기박막 형성장치가 제공된다. The present invention relates to an organic thin film forming apparatus, comprising: providing an evaporation source in a vacuum chamber, and depositing an organic material to be evaporated or sublimed on a glass substrate provided in the ceiling of the vacuum chamber, wherein the evaporation source is the organic material. Cylindrical crucible filled with; A heating unit wrapping and heating the crucible; An opening corresponding to the size of the crucible on an upper surface thereof, and a heat shield part surrounding the heating part; A measurement unit installed at the center of the opening at an upper side of the heat shield to measure the speed of the organic material evaporated or sublimed in the crucible; A pair of shutters for dividing and closing the opening of the heat shield portion, a hinge axis installed at the end of the shutter so that the shutter is rotated, and the degree of opening from the center of the opening according to the value measured by the measuring unit An opening and closing portion connected to the hinge shaft for adjusting and including opening and closing means for rotating the shutters to face each other; It includes integrally, characterized in that a plurality is installed according to the type of organic material deposited on the glass substrate. As a result, an organic thin film forming apparatus can be freely moved, the ...

Vacuum vapor deposition equipment

在一种包括多个直线形蒸发源的真空气相沉积设备中，为蒸发容器分别计算等厚面。每个等厚面表示从对应的蒸发容器中的排放孔释放的蒸发材料的蒸汽的沉积量每单位时间都相同的位置。随后，蒸发容器以各个等厚面的接触点在基板的表面上都相互重合的方式放置，每个接触点表示对应的等厚面与基板的表面接触的位置。

Deposition apparatus

A deposition apparatus according to an embodiment of the present invention comprises: an evaporation source including a crucible in which a deposition material is accommodated, a heater unit supported on the outside of the crucible, and a cooling unit supported on the outside of the heater unit; a chamber which accommodates the evaporation source and provides a deposition space in which a deposition substrate is deposited; a weight measuring device which is arranged inside the chamber and senses the total weight of the evaporation source; and a control unit which is provided outside the chamber and transmits and receives a signal to and from the weight measuring device.

Deposition apparatus and operating method thereof

본 발명은 증착장비 및 이의 동작방법에 관한 것이다. 본 발명에 따른 증착장비는 서로 다른 측벽 두께를 가지며 내부에 증착물이 충진된 도가니와, 상기 도가니를 감싸 두르는 가열수단 및 상기 가열수단의 발열온도를 제어하는 제어부를 포함한다. 이를 통해 도가니 내부의 증착물 잔량을 확인할 수 있게 된다.

Evaporation coating method with intelligently adjustable evaporation rate

本发明公开了一种蒸发速率智能可调的蒸发镀膜方法，包括：（1）启动蒸发镀膜机的真空系统对镀膜室抽真空；（2）当镀膜室的真空度达到工艺要求时，启动线性蒸发源和控制系统；线性蒸发源的一级坩埚将送丝机构输送来的丝材熔化成熔液，并通过熔液流管将熔液注入二级坩埚；熔液在二级坩埚中加热蒸发实现蒸发镀膜；（3）在镀膜路径的下游设置有膜厚检测装置，可对基底上沉积的膜层进行膜厚检测；控制系统会实时获取膜厚检测数据，并根据膜厚检测数据对线性蒸发源在镀膜幅宽方向上的蒸发速率进行分段闭环智能调控，使基底上沉积的膜层呈现所需的膜厚分布状态，并在整个蒸发镀膜过程中保持该膜厚分布状态的稳定。

Process for preparing arsenic-selenium photoreceptors

A process for preparing arsenic-selenium photoreceptors wherein the arsenic distribution in the photoreceptor, particularly at its top surface, is controlled within a preferred concentration range, which comprises controlling the evaporation rate of the arsenic-selenium alloy by means of a crucible weight sensing system to monitor alloy depletion rate and a cascade dual-loop feedback control system processing both crucible assembly weight change and temperature to modify resistive power input.

Evaporator, deposition arrangement, deposition apparatus, and methods of operation thereof

【課題】アルカリ金属又はアルカリ土類金属を含む材料の蒸発及び当該材料の基板上への堆積のための堆積アレンジメントの提供。 【解決手段】材料を液化するために構成される第１のチャンバ１１０、第１のチャンバ１１０と流体連通され、且つ第１のチャンバ１１０の下流にあるバルブ１３０を含み、バルブ１３０はバルブ１３０を通る液化された材料の流量を制御するように構成されており、蒸発ゾーン１１４はバルブ１３０と流体連通され、且つ当該バルブの下流にあり、蒸発ゾーン１１４は液化した材料を蒸発させるために構成され、一又は複数の排出口１１６は蒸発した材料を基板４に向けるように構成されている堆積アレンジメント。 【選択図】図１