УСТРОЙСТВО И СПОСОБ НАНЕСЕНИЯ АТОМНОГО СЛОЯ

Изобретение относится к устройству и способу для нанесения атомного слоя на поверхность подложки. Упомянутое устройство содержит инжекторную головку для газообразного прекурсора с выступающими частями, содержащую систему подачи газообразного прекурсора, причем упомянутая инжекторная головка выполнена с возможностью инжекции газообразного прекурсора из системы подачи газообразного прекурсора в пространство нанесения для контакта с поверхностью подложки. Пространство нанесения ограничено упомянутой инжекторной головкой и поверхностью подложки. Упомянутое устройство выполнено с возможностью обеспечения перемещения упомянутой инжекторной головки и подложки относительно друг друга в плоскости поверхности подложки. Упомянутая инжекторная головка содержит инжектор несущего газа для инжекции несущего газа между упомянутой инжекторной головкой и поверхностью подложки и/или между упомянутой инжекторной головкой и поверхностью держателя подложки, который механически прикреплен к подложке. Инжектор ...

МЕТАЛЛИЧЕСКАЯ ПРОВОЛОКА, ПОКРЫТАЯ СЛОЕМ МЕТАЛЛИЧЕСКОГО МАТЕРИАЛА И ПРЕДНАЗНАЧЕННАЯ ДЛЯ АРМИРОВАНИЯ ЭЛАСТОМЕРНЫХ МАТЕРИАЛОВ, И СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ

... 1. Способ изготовления металлической проволоки для армирования эластомерного материала, содержащей металлическую сердцевину и слой металлического покрытия, причем упомянутая сердцевина имеет заданный исходный диаметр, при этом способ включает в себя этапы, на которых: a) подвергают упомянутую металлическую сердцевину по меньшей мере одной поверхностной обработке для подготовки поверхности сердцевины к нанесению упомянутого слоя покрытия; b) термически обрабатывают упомянутую сердцевину; c) напыляют на упомянутую сердцевину упомянутый слой металлического покрытия до заданной исходной толщины посредством технологии плазменного напыления; и d) выполняют волочение покрытой сердцевины до получения сердцевины с конечным диаметром, который меньше упомянутого заданного исходного диаметра, и слоя металлического покрытия с конечной толщиной, которая меньше упомянутой заданной исходной толщины. 2. Способ по п.1, в котором упомянутые этапы поверхностной обработки, термической обработки, напыления и ...

НАМОТОЧНОЕ ВАКУУМИРОВАННОЕ УСТРОЙСТВО

... 1. Намоточное вакуумированное устройство, содержащее:камеру, способную поддерживать состояние вакуума;первый электрод в форме ролика, который обеспечен в камере с возможностью вращения, включающий в себя часть, с которой гибкое обрабатываемое целевое изделие находится в контакте, и часть, с которой гибкое обрабатываемое целевое изделие не находится в контакте, и способен заставлять гибкое обрабатываемое целевое изделие перемещаться под действием вращения;блок газоснабжения, включающий в себя второй электрод, установленный напротив первого электрода в камере, и способный подавать технологический газ в область между обрабатываемым целевым изделием и вторым электродом, причем обрабатываемое целевое изделие находится в контакте с первым электродом; итретий электрод имеет поверхность, расположенную напротив части первого электрода в камере, с которой обрабатываемое целевое изделие не находится в контакте, причем напряжение переменного тока посредством источника переменного тока подают в область ...

БАРЬЕРНАЯ ПЛЕНКА ИЛИ ЛИСТ, И МНОГОСЛОЙНЫЙ УПАКОВОЧНЫЙ МАТЕРИАЛ, ВКЛЮЧАЮЩИЙ ПЛЕНКУ ИЛИ ЛИСТ, И ИЗГОТОВЛЕННЫЙ ИЗ НИХ УПАКОВОЧНЫЙ КОНТЕЙНЕР

СПОСОБ ОСАЖДЕНИЯ ВТСП НА ЛЕНТУ С ВРАЩАЮЩИМИСЯ ВОКРУГ ОБЩЕЙ ОСИ ИСХОДНЫМ ПРИЕМНИКОМ, НАПРАВЛЯЮЩЕЙ КОНСТРУКЦИЕЙ И ЦЕЛЕВЫМ ПРИЕМНИКОМ

СПОСОБ И УСТРОЙСТВО ДЛЯ ВЫПОЛНЕНИЯ ПРОЦЕССА ПЛАЗМОХИМИЧЕСКОГО ОСАЖДЕНИЯ ИЗ ПАРОВОЙ ФАЗЫ

ПОКРЫТИЕ ПОЛОТНА ПОДЛОЖКИ ОСАЖДЕНИЕМ АТОМНЫХ СЛОЕВ

... 1. Способ атомно-слоевого осаждения, включающий:подачу покрываемого полотна в реакционное пространство реактора атомно-слоевого осаждения иобеспечение доступности реакционного пространства разделенным во времени импульсам подачи прекурсоров для нанесения материала на покрываемое полотно посредством последовательных самоограниченных поверхностных реакций.2. Способ по п. 1, включающий введение покрываемого полотна из зоны избыточного давления в реакционное пространство через прорезь, обеспечивающую поддержание разности давлений между указанной зоной и реакционным пространством.3. Способ по п. 2, в котором указанную прорезь образуют посредством ограничительных пластин.4. Способ по любому из предыдущих пунктов, в котором управление толщиной нанесенного материала осуществляют выбором скорости полотна.5. Способ по п. 2 или 3, включающий подачу неактивного газа в зону избыточного давления.6. Способ по любому из пп. 1-3, в котором направление потока паров прекурсоров в реакционном пространстве ...

Установка для нанесения покрытий из газовой фазы

Устройство для нанесения покрытий из газовой фазы

Способ получения металлического покрытия

Vorrichtung zum kontinuierlichen gleichmäßigen Überziehen von Endlosfaserbündeln und Verwendung dieser Vorrichtung zum kontinuierlichen, gleichmäßigen Überziehen von Endlosfaserbündeln

Vorrichtung und Verfahren zum Bearbeiten streifenförmiger Substrate

Die Erfindung betrifft zunächst eine Vorrichtung zum Bearbeiten, insbesondere Beschichten eines streifenförmigen Substrates (1) in einer Bearbeitungskammer (2), mit einer in der Bearbeitungskammer (2) um eine Drehachse (18) drehbar gelagerten Bearbeitungswalze (3), auf deren Mantelfläche das von einer ersten Spule (6) abgewickelte Substrat (1) wendelgangartig aufliegend, kontinuierlich bearbeitet, insbesondere beschichtet wird, wobei das bearbeitete, insbesondere beschichtete Substrat (1) auf einer zweiten Spule (7) aufgewickelt wird. Um im kontinuierlichen Durchlauf streifenförmige Substrate mit einer Schicht aus Graphene oder einer Schicht aus Nanoröhrchen zu beschichten, wird eine Gaseinlass/-auslass/-Einrichtung (8, 9, 10) zur Erzeugung eines im Wesentlichen parallel zur Drehachse (18) gerichteten Gasstroms (11, 12) vorgeschlagen. Weiter betrifft die Erfindung ein Verfahren zum Beschichten eines streifenförmigen Substrates (1) in einer Vorrichtung.

Verfahren und Vorrichtung zur grossflächigen Beschichtung von Substraten bei Atmosphärendruckbedingungen

Vorrichtung zur Bearbeitung einer Oberfläche eines Substrats und Düsenkopf

Die Erfindung betrifft eine Vorrichtung und einen Düsenkopf zur Bearbeitung einer Oberfläche eines Substrats (20). Die Vorrichtung weist auf: einen Substratstützmechanismus (2, 4, 12, 16) zum Stützen des Substrats (20) auf einer Substratstützebene (4) in einer Prozesszone (50), einen Düsenkopf (6, 7) zum Einwirkenlassen aufeinanderfolgender Oberflächenreaktionen mindestens eines ersten Präkursors (A) und eines zweiten Präkursors (B) auf die Oberfläche des Substrats (20) und einen Düsenkopfstützmechanismus (8, 11, 24, 26, 28, 29, 30, 32, 34) zum Stützen des Düsenkopfs (6, 7) in einem vorbestimmten Abstand (3) von der Substratstützebene (4). Der Düsenkopfstützmechanismus (8, 10, 11, 24, 26, 28, 29, 30, 32, 34) weist eine Düsenkopfstützfläche (24, 25, 37) auf, und der Düsenkopf (6, 7) wird an der Düsenkopfstützfläche (24, 25, 37) gestützt.

Magnetische Aufzeichnungsmedium und Verfahren und Gerät zur Herstellung desselben

ANLAGE ZUR KONTINUIERLICHEN VERBUNDBESCHICHTUNG VON BANDFOERMIGEM GUT.

Continuous composite coating appts. for coating continuous strip (S) has a pair of strip supply-take-up devices (1a,1b) and at least two of an ion plating coating zone (2), a sputtering coating zone (3), and a plasma chemical vapour deposition zone (4) arranged in series in the direction of strip movement, at least two of the zones being arranged so as to effect coating only on the underside of the passing strip. Partition walls (14) are located between adjacent coating zones and strip supply-take-up devices and adjacent coating zones. The walls have slits (18) which allow the strip to pass while maintaining a desired vacuum level in each zone. Each slit has upper and lower edges which are spaced apart so as not to interfere with the passage of the strip and each partition wall is provided with a pair of guide rollers (19) in the vicinity of the upper edge of each slit spaced from each other in the direction of strip movement. The arrangement ensures that the strip runs in a tensed state ...

Device for continuously movable infiltration of a flexible band substrate in high vacuum without touching the front side of the band substrate, comprises a sequence of prechambers to which the band substrate passes through

The device for continuously movable infiltration of a flexible band substrate in high vacuum without touching the front side of the band substrate, comprises a sequence of prechambers to which the band substrate passes through, where the pressure is gradually reduced in the prechambers, which are connected by openings or connection channels (4) whose minimum width and height are higher than the respective band substrate dimensions. The band substrate is guided by the prechamber over deflection rollers (2) so that the infiltration is carried out in non-straight manner. The device for continuously movable infiltration of a flexible band substrate in high vacuum without touching the front side of the band substrate, comprises a sequence of prechambers to which the band substrate passes through, where the pressure is gradually reduced in the prechambers, which are connected by openings or connection channels (4) whose minimum width and height are higher than the respective band substrate dimensions ...

MIKROWELLEN CVD-VERFAHREN ZUM AUFTRAGEN ROBUSTER SPERRSCHICHTEN

Substratkühlvorrichtung und Bandsubstratbehandlungsvorrichtung

Die Erfindung betrifft eine Substratkühlvorrichtung einer Vakuum-Substratbehandlungsanlage, umfassend mindestens eine Kühlplatte mit einer Grundplatte sowie einer auf einer ersten Seite der Grundplatte angeordneten Kühlmittelleitung und einer auf einer der ersten Seite gegenüberliegenden zweiten Seite angeordneten ersten Oberflächenvergrößerungsstruktur, sowie eine Bandsubstratbehandlungsvorrichtung, umfassend eine evakuierbare Prozesskammer, in der mindestens eine Behandlungseinrichtung angeordnet ist, und eine Transporteinrichtung für ein Bandsubstrat, umfassend einen Abwickel zum Bereitstellen eines Bandsubstrats, Umlenkwalzen zur Führung des Bandsubstrats durch die Prozesskammer entlang eines Transportpfads, und einen Aufwickel zum Aufnehmen des Bandsubstrats, dadurch gekennzeichnet, dass an mindestens einer Stelle des Transportpfads eine Substratkühlvorrichtung angeordnet ist.

Arrangement for coating band-shaped film substrates e.g. ferromagnetic metal film, comprises wind-off and take-up rollers guided between the substrates under strip tensile stress and coating station comprising two coating sources

The arrangement for coating band-shaped film substrates, comprises wind-off (7) and take-up rollers (8) guided between the substrates under a strip tensile stress and a coating station arranged between the rollers and comprising two coating sources (5) in the area of a coil coating process, in which the strip is guided between the wind-off roller and take-up roller. The coating sources are arranged toward the strip flow one behind the other and in a coating side of the film substrate. A supporting element is arranged between the sources on a rear side (11) of the substrate. The arrangement for coating band-shaped film substrates, comprises wind-off (7) and take-up rollers (8) guided between the substrates under a strip tensile stress and a coating station arranged between the rollers and comprising two coating sources (5) in the area of a coil coating process, in which the strip is guided between the wind-off roller and take-up roller. The coating sources are arranged toward the strip flow ...

VORRICHTUNG ZUR BEREICHSWEISEN OBERFLÄCHENBEHANDLUNG EINES GEGENSTANDS MITTELS DIELEKTRISCH BEHINDERTER GASENTLADUNG

Kornorientiertes Elektroblech mit einer elektrisch isolierenden Beschichtung

Kornorientiertes Elektroblech mit einer elektrisch isolierenden, harten Beschichtung aus einem amorphen Kohlenstoff-Wasserstoff-Netzwerk.

A method of coating metallic filaments

... 1,141,551. Coating filamentary substrates. DOW CORNING CORP. 24 Aug., 1966 [24 Jan., 1966], No. 37998/66. Heading C1A. [Also in Divisions C7 and H5] Filamentary substrates e.g. of quartz, ceramic or metal such as W are coated by passing the substrate through a vapour of a compound of the element to be deposited, establishing a glow discharge in the vapour between an electrode and the substrate to decompose the compound and deposit the required element. The materials deposited may be Si, B, SiC, boron silicides, B 4 C, Mo, Al and Ta. Boron trichloride or diborane is used for depositing B and SiC is deposited from methyltrichlorosilane, ethyltrichlorosilane, propyltrichlorosilane, trimethylmonochlorosilane, dimethyldichlorosilane, methylsilane, mixtures thereof and mixtures of or with silicon tetrachloride, trichlorosilane. As shown in Fig. 1, a filament 11 is passed through electrode 12 or alternatively the electrode may be moved. A D.C. power source has its negative terminal connected to ...

Apparatus for the coating and/or conditioning of substrates

Improvements in and relating to an Apparatus and a Method for Producing Boron-Coated Filaments

... 1,177,854. Boron-coated filaments. UNITED AIRCRAFT CORP. April 13, 1967 [May 6, 1966], No. 16944/67. Heading C7F. Deposition of boron on a metallic filament, suitably of tungsten titanium or zirconium, is carried out by thermal decomposition of a boron halide in a reducing atmosphere within a vertical reactor 1 with liquid seals at its ends and with an inter for reactive gases through the upper seal. Filament substrate 19 is passed continuously through the chamber and is electrically heated, contact being maintained through the sealing liquid, which is an electrically conductive liquid of high surface tension, such as mercury. Boron trichloride and hydrogen are introduced through inlet tube 4 and byproduct and excess reactant gases are removed through exit tube 5. The filament 19 enters and leaves the reactor through apertures so sized as to present passage of mercury with the filament.

Method of processing substrate for an energy storage device

The present invention relates to a method of processing a substrate for an energy storage device comprising providing a drum arranged to transport a moving substrate, the drum having an electromagnetic charge. A substrate to be moved is provided and a plurality of curing stations are provided around the circumference of the drum. Each curing station performs the steps of depositing a precursor on the surface of the moving substrate, generating a plasma and directing the plasma onto the surface of the moving substrate such that the precursor is reacted to form a material layer on the substrate without substantially raising the temperature of the substrate.

IMPROVEMENTS IN AND RELATING TO A METHOD FOR PRODUCING FILAMENTARY BORON AND APPARATUS THEREFOR

... 1,214,354. Coating with boron. UNITED AIRCRAFT CORP. 15 Feb., 1968 [24 Feb., 1967], No. 7449/68. Heading C1A. [Also in Division C7] Boron is deposited on a resistively heated wire of, e.g. W, Ta, Mo, Al, Al coated W, W coated Si or glass-coated copper, by decomposition of boron trichloride mixed with hydrogen. The wire 38 is fed through two stages of a quartz or heat resistant glass reaction chamber. In the second stage the hydrogen and boron trichloride are fed through pipes 10, 12 and 14, 16 to give concurrent and counter-current gas flow. The effluent gas, which is a mixture of the unreacted gas and hydrogen chloride, is extracted through a pipe 18 and fed to the first chamber. The concentration of boron halide admitted to the second stage is so adjusted that peak temperatures are obtained in both the concurrent and countercurrent regions of the second chamber. Each chamber has conductive, liquid seals 36 of, e.g. mercury.

Method of plating wire and apparatus therefor

... 748,613. Coating with metals. COMMONWEALTH ENGINEERING CO. OF OHIO. July 6, 1953, No. 18716/53. Class 82(2). Continuous lengths of metal wire are coated with metal by thermal decomposition of a metalbearing gas, the wire being moved continuously in the direction of its length through a plurality of chambers, one of which is a gas-tight plating chamber in which the wire is heated to the decomposition temperature of the gas and in which the gas is circulated in contact with the wire. Examples of metal-bearing gases include nickel, iron, chromium, molybdenum and cobalt carbonyls, copper nitroxyl, cobalt nitrosyl carbonyl, antimony and tin hydrides, osmium carbonyl bromide and ruthenium carbonyl chloride ; these may be admixed with inert gases such as carbon dioxide, helium, nitrogen, hydrogen and the product of controlled burning of oxygen-free hydrocrabons. Heating may be effected electrically, using the wire as a resistance heater and shunts being used in parallel with the plating zones.

Improvements in or relating to metallized paper

A paper sheet is coated on at least one side with a film of metal by deposition from a decomposable metal-bearing gaseous compound and an electrically insulating layer is then applied over said metal film. The paper may be impregnated with silicone resin and reinforced with inorganic fibres such as fibres of glass, metal-coated glass and asbestos. Suitable metal bearing compounds are the carbonyls of nickel, iron, molybdenum, chromium, cobalt, tungsten and ruthenium; copper acetylacetocnate; hydrides; nitrosyls; and organic compounds. A catalyst such as silicon or titanium chloride may be added to the metal bearing compound. A carrier gas such as nitrogen, hydrogen, helium, argon or carbon dioxide is preferably used. The electrically insulating layer may be a varnish or lacquer based on nitrocellulose, an epoxy resin, a silicone resin or a vegetable-oil modified alkyd resin. A metal-coating apparatus is described (Fig. 7, not shown) in which paper sheet is drawn continuously through pre-heating ...

PROCEDURE AND DEVICE FOR THE WIDE COATING OF SUBSTRATES WITH ATMOSPHERIC PRESSURE CONDITIONS

PROCEDURE FOR THE PRODUCTION OF A FUNCTION LAYER

PROCEDURE FOR CONTINUOUS ATMOSPHERIC PRESSURE THE PLASMA TREATMENT AND/OR COATING OF WORKPIECES

SOURCE OF MAGNET MIRROR PLASMA

PROCEDURE FOR THE PRODUCTION OF A FUNCTION LAYER

ATOMIC POSITION SEPARATION SYSTEM AND PROCEDURE FOR THE COATING OF FLEXIBLE SUBSTRATES

GLASS CERAMIC ARTICLE WITH DIFFUSION BARRIER AND PROCEDURE FOR THE PRODUCTION OF A GLASS CERAMIC ARTICLE WITH DIFFUSION BARRIER

TITANIUM NITRIDE OR TIN OXIDE EDITION ON THE SURFACE OF A COATING PLANT.

PROCEDURE AND DEVICE FOR THE CONTINUOUS PRODUCTION OF AN INSULATING SUBSTRATE.

PROCEDURE FOR THE RUN GLOWING OF METAL SUBSTRATES

PCVD DEVICE AND PROCEDURE FOR THE PRODUCTION OF AN OPTICAL FIBER, A GATHERING MOLD STAFF AND A JACKET PIPE AND THE SO THAT MANUFACTURE OPTICAL FIBER

Magnetic roller gas gate employing transonic sweep gas flow

ISOLATION VALVE

METHOD FOR CARRYING OUT HOMOGENEOUS AND HETEROGENEOUS CHEMICAL REACTIONS USING PLASMA

Continuous cvd equipment for films and continuous cvd process

ULTRAVIOLET (UV) AND PLASMA ASSISTED METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) SYSTEM

The present invention is a high-throughput, ultraviolet (UV) assisted metalorganic chemical vapor deposition (MOCVD) system for the manufacture of HTS-coated tapes. The UV-assisted MOCVD system of the present invention includes a UV source that irradiates the deposition zone and improves the thin film growth rate. The MOCVD system further enhances the excitation of the precursor vapors and utilizes an atmosphere of monatomic oxygen (O) rather than the more conventional diatomic oxygen (O2) in order to optimize reaction kinetics and thereby increase the thin film growth rate. In an alternate embodiment, a microwave plasma injector is substituted for the UV source.

BAFFLE SYSTEM FOR GLOW DISCHARGE DEPOSITION APPARATUS

Apparatus for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases introduced into a first one of the adjacent chambers are unidirectionally swept through the gas gate to minimize back diffusion of process gases from the other of the chambers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder ...

CHEMICAL VAPOR DEPOSITION

This invention relates to an improved method of depositing thin layers of material on a substrate by means of chemical vapor deposition and particularly to addition of gas to the chemical vapor gases, which additional gas reduces conductive heat loss and improves the rate and quality of the coating. The invention has particular application to silicon carbide filaments and their coating with barrier layers of materials, such as hafnium carbide, hafnium nitride, etc., which are useful layers for inhibiting the migration of other materials into the silicon carbide when the silicon carbide filament is used as a reinforcing medium in a composite structure.

MULTIPLE CHAMBER DEPOSITION AND ISOLATION SYSTEM AND METHOD

The formation of a body of material on a substrate having at least two layers of different composition is made possible by the improved system and method of the present invention with minimized cross contamination between the respective deposition environments in which the layers are deposited. The disclosure relates more specifically to the use of the system and method for the deposition of multilayered amorphous silicon alloys to form photovoltaic devices. As a preferred embodiment of the invention, first, second, and third glow discharge deposition chambers are provided for depositing respective first, second, and third amorphous silicon alloy layers on a substrate. The second layer is substantially intrinsic in conductivity and differs in composition from the first and third layers which are of opposite conductivity type by the absence of at least one element. The second chamber is provided with starting materials including at least one gas from which the deposited layers are derived ...

MAGNETIC GAS GATE

A magnetic gas gate adapted to operatively connect two adjacent dedicated chambers, in the first chamber of which a first layer is deposited upon a magnetic web of substrate material and in the second chamber of which a second layer is deposited onto the first layer. The first chamber has introduced thereinto gas constituents used to form the first layer while the second chamber (1) has introduced thereinto gas constituents used to form the second layer which constituents include at least one gas not introduced into the first chamber; and (2) is operatively associated with a mechanism for unidirectionally drawing the gases from the first chamber side of the gas gate toward the second chamber side of the gas gate. It is important that the second chamber gas constituents be substantially prevented from backflowing or diffusing through the gas gate to contaminate the gas constituents in the first chamber, To prevent contamination of the first chamber constituents from the second chamber gas ...

CONTINUOUS CHEMICAL VAPOR DEPOSITION PROCESS AND PROCESS FURNACE

An apparatus and process is provided for continuously depositing solid carbon at atmospheric pressure onto the surfaces and in the porosity of a thin substrate material.

HIGH CONDUCTIVITY GRAPHANE-METAL COMPOSITE AND METHODS OF MANUFACTURE

Embodiments of the present technology include graphane-metal composites. An example graphane-metal composite comprises a porous metal foam substrate, a graphane layer deposited to the porous metal foam substrate, a metal layer applied to the graphane layer, and another graphane layer deposited to the metal layer; the multilayered porous metal foam substrate being compressed to form a graphane-metal composite.

DEPOSITION METHOD

RADIATION-TRANSMISSIVE FILMS ON GLASS ARTICLES

A glass article comprising a glass substrate and a diamond-like film deposited on the substrate is disclosed. The glass article is responsive to actinic radiation, such as being capable of demonstrating a change in refractive index upon exposure to actinic radiation. The film permits passage of the actinic radiation through the film and into the substrate. In specific implementations, the film comprises at least about 30 atomic percent carbon, from about 0 to about 50 atomic percent silicon, and from about 0 to about 50 atomic percent oxygen on a hydrogen-free basis. Furthermore, a method of depositing a diamond-like film onto a glass substrate is disclosed, as well as fiber optic gratings.

PROCESS AND APPARATUS FOR CONTINUOUS COATING OF FIBROUS MATERIALS

A process and apparatus for continuously depositing a coating on a fibrous material. The process is a chemical vapor deposition process that includes causing multiple strands of a fibrous material to continuously travel through a coating zone within an enclosed chamber defined by a housing so that portions of the strands contact a reactant gas as the portions travel through the chamber, directly heating the portions of the strands without physically contacting the strands and without directly heating the housing, and depositing a coating material on the strands as a result of the reactant gas contacting the portions of the strands and decomposing to form a coating of the coating material. Heating of the strands can be achieved by capacitive coupling, inductive coupling, microwave radiation, and radiant heating.

APPARATUS AND METHOD FOR APPLYING SURFACE COATINGS

The present invention provides a method for applying a surface coating on, for example, a sheet of fabric and further provides a plasma chamber (10) for coating a sheet of fabric, e.g. a textile material, with a polymer layer, the plasma chamber (10) comprising a plurality of electrode layers (RF, M) arranged successively within the plasma chamber, wherein at least two adjacent electrode layers are radiofrequency electrode layers (RF) or ground electrode layers (M), thereby providing a surface coating on both sides of a fabric sheet.

METHOD AND APPARATUS FOR MAKING GRIT AND ABRASIVE MEDIA

Synthetic diamond film produced by chemical vapor deposition can be crushed to obtain diamond grit which has useful abrasive properties. The flexibility of CVD deposition processes in determining diamond film properties means that CVD diamond grit properties can be tailored to particular abrasive applications. In a disclosed embodiment, the grit particles are coated with a magnetic material. The coated grit particles can then be aligned with a magnetic field, and the coated grit particles are bonded to a matrix while aligned. In a further disclosed form of the invention, a chemical vapor deposition system, such as an arc jet plasma deposition system, is provided in a chamber. A carrier strip and the deposition system are moved with respect to each other, and the deposition system is caused to deposit diamond film on the carrier strip. The strip can be of a flexible material, such as a copper or woven graphite material, and can be wound onto supply and take-up spools, respectively, before ...

MICROWAVE CVD METHOD FOR DEPOSITION OF ROBUST BARRIER COATINGS

A method for depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si-H bonds. The barrier coating ...

Vorrichtung zur Abscheidung von Halbleitermaterial aus der Gasphase auf stabförmigen Trägern aus Halbleitermaterial und Verfahren zu deren Herstellung

Verfahren zum Plattieren von Metallgussstücken

Procédé pour l'obtention d'un revêtement métallique sur un fil métallique de longueur indéterminée et appareil pour la mise en oeuvre de ce procédé

Procédé de fabrication d'objets métalliques plaqués, objet métallique obtenu par ce procédé et installation pour la mise en oeuvre de ce procédé

Vapour deposition of boron-based coatings on filaments - for reinforcement in ultra-strong composites

Articles (specifically continuous filament) are vacuum coated with boron or boron-carbon by heating the substrate (preferably electrically) to 700-900 degrees C, pref. 750-850 degrees C, at a pressure of 10-25, pref. 13-22, Torr and admitting a gaseous hydrocarbon-substd. borane, pref. ethyldeca- or triethylborane. The coating appears non-crystalline by X-ray diffraction. In an alternative process, diborane is used and the substrate is heated at 550-1000 degrees C. Material to be coated can be a filament of silica, optionally carbon coated, or tungsten. The process yields extremely strong lightweight filaments for use as reinforcement in ultra high strength composites, and combines the strength of amorphous boron with the low density of SiO2 etc.

Verfahren zum kontinuierlichen Metallisieren von nichtmetallischem durchlaufendem Gut, insbesondere Glasfasern, und Vorrichtung zur Durchführung eines solchen Verfahrens

Vacuum - coating wire or filament

Apparatus of Fr. Pat. 1 539 703 (12.6.67) having treatment chamber with removable interior part consisting of series of mercury reservoirs at preset intervals and vertically aligned, each having orifice large enough for vertical passage of filament without letting the Hg run out, and means for establishing voltage between consecutive reservoirs so that the conducting filaments between the reservoirs are heated by Joule effect.

Procédé d'enrobage d'un filament, notamment de carbone, et application de ce procédé

Verfahren zur Verbesserung der Supraleitungseigenschaften von durch Reduktion von Halogeniden der Elemente Niob und Zinn mittels Wasserstoff auf einem erhitzten Träger abgeschiedenen Nb3Sn-Schichten

Appareil pour la fabrication en continu de filaments de bore

METHOD FOR CONTINUOUS COATING OF A SUBSTRATE, PRODUCT RESULTING FROM THIS PROCESS AND APPARATUS THEREFOR.

Process and apparatus for metallising fibres

The process for cleaning and subsequently metallising fibre materials comprises a) passing the fibre material for cleaning through a first chamber (1), wherein a plurality of heated jet streams of inert gas emerging from a series of holes impinge on the fibre material in a tube surrounding the fibre material and clean it; and b) then passing the fibre material into a second chamber (2) into which a gaseous, thermally decomposable metal compound is passed in the form of a plurality of heated jet streams from a series of fine holes into a tube surrounding the fibre material and impinges on the heated and cleaned fibre material, and the metal compound undergoes thermal decomposition and the fibre material becomes metallised. ...

Apparatus for forming thin films on a substrate material having a substrate having such coatings and rollers.

Gegenstand der Erfindung ist eine Vorrichtung zur Abscheidung dünner Schichten durch wenigstens zwei selbstbegrenzende Oberflächenreaktionen auf einer laufenden Folienbahn (FB), wobei die Vorrichtung eine Beschichtungsplatte (1) und eine dieser gegenüberliegend angeordnete Gegenplatte (2) aufweist, wobei die Beschichtungsplatte mehrere Zuführungsbereiche und Ableitungsbereiche für Reaktions- und Spülgas und die Gegenplatte mindestens einen Zuführungsbereich für Spülgas oder Luft aufweist, wobei Mittel (R1, R2; U1, U2) vorhanden sind, die Folienbahn zwischen den beiden Platten hindurch zu bewegen und wobei die zugeführten Gase Gaskissen bilden, welche die Folienbahn beim Durchlauf zwischen den beiden Platten gegen diese abstützten und auf Abstand von ihnen halten. Die Beschichtungsplatte und/oder die Gegenplatte sind in zumindest einem Zuführungsbereich porös für einen flächig über diesen Bereich verteilten Gasaustritt ausgebildet. Gegenstand der Erfindung ist auch ein Rollenmaterial mit ...

Devices and methods of forming thin films on a moving film material as well as film web or blanks therefrom.

Gegenstand der Erfindung sind Vorrichtungen und Verfahren zur Abscheidung dünner Schichten durch wenigstens zwei selbstbegrenzende Oberflächenreaktionen (ALD/MLD) auf einer laufenden Folienbahn (FB), wobei die Vorrichtung mindestens einen Beschichtungszylinder (10) sowie Bahnlenkungsmittel (21, 22) aufweist. Der Beschichtungszylinder (10) ist stillstehend montiert, wird von der Folienbahn (FB) in mehreren schraubenförmigen Windungen umwunden und weist mehrere Zuführungs- und Ableitungsbereiche für Reaktions- und Spülgas auf. In zumindest einigen Zuführungsbereichen ist die Oberfläche des Beschichtungszylinders (10) porös für einen flächig über diese Bereiche verteilten Gasaustritt ausgebildet. Gegenstand der Erfindung ist auch eine Folienbahn (FB) oder sind Zuschnitte daraus, welche mit einer inline aus einem flüssigen Material erzeugten Abdeckung versehen und/oder mit einem inline gemessenen OTR-, NTR- oder WVTR-Wert beschriftet beziehungsweise codiert ist/sind.

METHOD OF PRODUCING SUBSTRATE, PROVIDED WITH COATING

SOURCE AND DEVICE FOR TREATMENT OF SUBSTRATE

METHOD AND DEVICE FOR POLARIZATION DISCHARGE DIELECTRIC BARRIER ELECTRODE

DLC film-forming apparatus

Functional film

Take-up vacuum processing device

Provided is a take-up vacuum processing device which prevents damage due to heat generation and occurrence of dielectric breakdown, thereby being suitable for life extension. An RF electrode (6) is disposed in a vacuum chamber (15). Accordingly, for example, compared to when a rotation introducing unit such as a capacitor coupling is disposed under atmospheric pressure, the occurrence of dielectric breakdown between a roller electrode (18) and the RF electrode (6) can be prevented if the interior of the vacuum chamber (15) is maintained at a predetermined degree of vacuum. Moreover, the problem of damage due to heat generation in conventional rotation introducing units such as a rotary connector is eliminated. Since the RF electrode (6) is disposed with a gap from the roller electrode (18), that is, since alternating-current voltage is applied to the roller electrode (18) without contact, wear due to contact does not occur, and thus the life extension of the electrodes can be achieved.

Method and apparatus for depositing atomic layers on a substrate

Apparatus for processing of a material on a substrate and method for measuring optical properties of a material processed on a substrate

High throughput deposition apparatus with magnetic support

An apparatus for depositing one or more thin film layers on one or more continuous web or discrete substrates. The apparatus includes a pay-out unit for dispensing one or a plurality of webs, a deposition unit that deposits a series of one or more thin film layers thereon, and a take-up unit that receives and stores the webs following deposition. In a preferred embodiment, deposition occurs through plasma enhanced chemical vapor deposition in which a plasma region is formed between a cathode in the deposition unit and one or more vertically-oriented webs. The instant deposition apparatus includes a support system for guiding and stabilizing the transport of one or more webs or substrates through the deposition chambers. The support system includes a magnetic guidance assembly and an edge-stabilizing assembly that operate to inhibit perturbations of the motion of a web or substrate in directions other than the direction of transport through the apparatus.

Method of depositing dielectric and/or metal on a substrate.

PROCESS AND EQUIPMENT TO MANUFACTURE REFRACTORY MATTER FILAMENTS BY HEATING HIGH FREQUENCY

Products covered of a metal coating obtained starting from a gas metal compound and manufactoring process

MAGNETIC DOOR HAS GAS

Process and device of coating of a metallurgical product by layers of polymer and produitobtenu by this process

APPARATUS FOR AND METHOD OF APPLYING A COATING TO A SUBSTRATE

METHOD OF SURFACE TREATING A MOVING FILM AND INSTALLATION FOR CARRYING OUT SAID METHOD

BORON DEPOSITION ON CARBON MONOFILAMENT

IMPROVEMENTS IN AND RELATING TO A METHOD FOR PRODUCING FILAMENTARY MATERIALS AND APPARATUS THEREFOR

APPARATUS FOR cONTINUOUS ONE PRODUCING bORON FIBERS

METHOD AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION, CONTINUOUSLY, A TOP LAYER ON A SUBSTRATE.

A Method of Improving the Superconductor Properties of a Layer of an Intermetallic Superconductive Compound on a Support.

원자 층 증착 시스템에서 개별적인 선구체 존들 사이의 여분의 선구체 운송의 방지

ALD 박막 증착을 위한 시스템 및 방법(200, 300)은 다중의 개별적인 선구체 존(214, 216, 314, 316)을 수반하는 병진-기반의 프로세스에서 기재(210, 310)의 표면으로부터 여분의 비-화학 흡착된 선구체를 제거하기 위한 메커니즘(280, 380)을 포함한다. 본 개시에 따른 여분의 선구체 제거 메커니즘(280, 380)은 여분의 선구체의 국부화된 높은 온도 조건, 높은 에너지 조건, 또는 공비 혼합물을 도입하여, 개별적인 선구체 존에 도달하기 전에 여분의 선구체를 유리시키고, 이를 통해 기재의 열-도입된 열화를 야기하지 않고도 CVD 증착이 발생하는 것을 방지한다.

FUNCTIONAL FILM MANUFACTURING METHOD AND FUNCTIONAL FILM

... 유기/무기 적층형의 기능성 필름으로서, 높은 가스 배리어 성능 등, 목적으로 하는 기능을 바람직하게 발현함과 함께, 무기층과 유기층의 밀착성도 양호한 기능성 필름, 및 그 제조 방법을 제공하는 것을 과제로 한다. 무기층 상의 유기층이, 유기 용제와, 유기층이 되는 유기 화합물과, 유기 용제를 제외한 농도로 0.1 ∼ 25 중량％ 의 실란 커플링제를 함유하고, 또한, pH 조정제를 함유하지 않는 도료를 이용하고, 또한 도포 후의 가열 공정을 거쳐 경화되어 형성됨으로써, 이 과제를 해결한다.

플라즈마 처리를 위한 장치 및 방법

... 본 발명에 따르면, 반도체, 도체 또는 절연체 피막의 증착, 식각 또는 처리에 적절한 플라즈마-기반 처리를 위한 장치 및 방법이 제공된다. 플라즈마 발생 유닛은 기판의 처리 측면 상의 1개 이상의 긴 전극 그리고 기판의 대향 측면에 근접한 중성 전극을 포함한다. 전기적으로 파괴되고 기판 영역을 향해 유동되는 활성화 화학종을 생성하는 가스가 전력-공급 전극에 근접하게 주입될 수 있다. 이러한 가스는 그 다음에 전력-공급 전극과 기판 사이의 연장 처리 영역 내로 유동되고, 그에 의해 반응물 원료의 효율적인 이용으로써 높은 속도로 기판에 제어된 연속의 반응성을 제공한다. 가스는 전력-공급 전극들 또는 전극과 분할기 사이의 통로를 거쳐 배기된다.

표면 상에 성장된 탄소 나노튜브를 가진 유리 기판 및 그의 제조 방법

... 유리 기판, 특히 유리 섬유 기판 상에 탄소 나노튜브를 성장시키는 방법이 본 명세서에 기재되어 있다. 상기 방법은, 유리 기판 상에 촉매 물질 또는 촉매 전구체를 증착시키는 단계; 상기 촉매 물질 또는 촉매 전구체 이전에, 이후에, 또는 동시에 유리 기판 상에 비촉매 물질을 증착시키는 단계; 및 상기 유리 기판을 탄소 나노튜브 성장 조건에 노출시켜, 상기 유리 기판 상에 탄소 나노튜브를 성장시키는 단계를 포함할 수 있다. 유리 기판, 특히 유리 섬유 기판은 탄소 나노튜브가 그 표면 상에 성장되는 동안 이송될 수 있다. 촉매 전구체는 탄소 나노튜브 성장 조건에 노출되어 있을 때 촉매로 변환될 수 있다. 촉매 물질 또는 촉매 전구체 및 비촉매 물질은, 용매로서 물을 함유하는 용액으로부터 증착될 수 있다. 증착 기술의 예로서는 스프레이 코팅 및 딥 코팅이 포함된다.

원자층 증착 반응기 내 기판 웹 트랙의 형성

... 제1 지지 롤 세트(17, 27, 37)를 제2 지지 롤 세트(18, 28)에 대하여 이동시킴으로써 증착 반응기(10)의 반응 공간 안으로 반복 패턴을 가진 기판 웹(15)의 트랙을 형성하기 위한 장치 및 방법이 제공된다. 본 발명의 일 효과는 트랙이 자동적으로 형성된다는 것이다. 다른 효과는, 반응 공간으로부터의 가스를 기판 웹을 위한 제1 지지 롤 세트를 통해 진행하는 루트를 거쳐서 제거함으로써 상부로부터 하부로 향하는 유동이 얻어질 수 있다는 점이다.

APPARATUS FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Gas-barrier multilayer film

A gas-barrier multilayer film including: a base member; and at least one thin film layer formed on at least one surface of the base member, wherein at least one layer of the thin film layer(s) satisfies at least one of requirements (A) and (B).

Surface wave plasma cvd apparatus and layer formation method

A surface wave plasma CVD apparatus, includes: a waveguide ( 3 ) that is connected to a microwave source ( 2 ), and in which a plurality of slot antennas (S) are formed thereof; a dielectric plate ( 4 ) for conducting microwaves emitted from the plurality of slot antennas (S) into a plasma processing chamber ( 1 ) so that a surface wave plasma is produced; an insulating shield member (lb) that is arranged so as to surround a layer formation processing region (R) in which the surface wave plasma is produced; and a gas ejection portion ( 52 ) that ejects process material gas into the layer formation processing region (R).

Plasma cvd apparatus

The disclosed plasma CVD apparatus ( 1 ) is provided with a vacuum chamber ( 3 ); a pair of deposition rollers ( 2, 2 ) disposed within the vacuum chamber ( 3 ) that are connected to both poles of an AC power supply and around which a substrate (W) is wound; a gas-supplying device ( 5 ) that supplies process gas containing a source gas to a deposition zone (D) which is a portion of or all of the region that is on one side of a line linking the centers of rotation of the pair of deposition rollers ( 2, 2 ); and a magnetic-field-generating device ( 7 ) that, by means of the AC power supply being applied to each of the deposition rollers ( 2, 2 ), forms a magnetic field that causes the source gas in a predetermined region to become plasma. The magnetic-field-generating device ( 7 ) causes the source gas in the region adjacent to the surface of the portion of the pair of deposition rollers ( 2, 2 ) located within the deposition zone (D) to become plasma, forming a plasma region (P). The substrate (W) is wound around the pair of deposition rollers ( 2, 2 ) so as to pass through the plasma region (P).

Graphene synthesis chamber and method of synthesizing graphene by using the same

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Roll-To-Roll PVD System and Method to Manufacture Group IBIIIAVIA Photovoltaics

The present inventions provide method and apparatus that employ constituents from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of PVD systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece. 1. A roll-to-roll PVD deposition system for depositing a plurality of films of Group IA and Group VIA materials on a front surface of a continuous sheet shaped workpiece that is advanced in a process direction , comprising:a process housing through which the continuous sheet shaped workpiece is advanced between an entrance opening and an exit opening of the process housing, the process housing including a first process section located by a horizontal peripheral wall of the process housing and a second process section located by a vertical peripheral wall of the process housing, wherein the first process section is associated with a horizontally disposed portion of the continuous sheet shaped workpiece and the second process section is associated with a vertically disposed portion of the continuous sheet shaped workpiece;a workpiece tensioning and drive assembly for advancing the continuous sheet shaped workpiece in the process direction between the entrance opening and the exit opening of the process housing;a first PVD unit disposed at the first process section to continuously deposit a first film onto the horizontally disposed portion of the continuous sheet shaped workpiece by vertically directing a first material toward the first process section as the continuous sheet shaped workpiece is advanced through the at least first PVD unit; anda second PVD unit disposed at the second process section to continuously ...

Method and Device for Atmospheric Pressure Plasma Treatment

A continuous plasma treatment process, said process comprising the steps of: providing a plasma treatment apparatus, said apparatus comprising at least one plasma treatment zone, said plasma treatment zone comprising a pair of electrodes with endless dielectric belts each having a first and a second side and each covering an electrode of said pair of electrodes; producing a non-thermal plasma in a process gas at a pressure of 100 Pa to 1 MPa in the space between said pair of endless dielectric belt-covered electrodes by applying a voltage between said electrode pair; providing a web material to be treated such that it can be transported by said two endless dielectric belts in such a way that there is an area in the plane of said belt at least about 5 mm on either side of said web material on the side of said endless dielectric belts with no part thereof facing one electrode of said pair of electrodes; transporting said web material using said endless dielectric belts in frictional contact with said electrodes such that the side of said web material not in contact with said endless dielectric belts is treated in two passes through said at least one plasma treatment zone while at the same time the exposed parts of the endless dielectric belts transporting said web material are also treated; and cleaning said parts of said endless dielectric belts treated with said plasma using a cleaning station outside said plasma treatment zone prior to said endless dielectric belts re-entering said plasma treatment zone, wherein said electrodes have a length in the transport direction of said endless dielectric belts of at least 10 mm; and an apparatus comprising: at least one plasma treatment zone, said plasma treatment zone comprising a pair of electrodes with endless dielectric belts each having a first and a second side and each covering an electrode of said pair of electrodes; a voltage power supply for each plasma treatment zone connected to said pair of electrodes such that ...

PLASMA CVD APPARATUS

A plasma CVD apparatus capable of preventing unnecessary deposition on a supplying portion of a source gas so as to suppress generation of flakes, and thereby depositing a CVD coating excellent in quality is provided. This plasma CVD apparatus includes a vacuum chamber, a vacuum pump system for vacuuming an interior of the vacuum chamber, a deposition roller around which a substrate is wound, the deposition roller being provided in the vacuum chamber, a gas supplying portion for supplying the source gas to the interior of the vacuum chamber, and a plasma power supply for forming a plasma generating region in the vicinity of a surface of the deposition roller and thereby depositing a coating on the substrate. The gas supplying portion is provided in a plasma non-generating region positioned on the opposite side of the plasma generating region with respect to the deposition roller. 1. A plasma CVD apparatus , comprising:a vacuum chamber whose interior is hollow;a vacuum pump system for vacuuming the interior of said vacuum chamber;a deposition roller around which a substrate serving as a deposition object is wound, the deposition roller being disposed in said vacuum chamber;a gas supplying portion for supplying a source gas to the interior of said vacuum chamber; anda plasma power supply for forming a plasma generating region in the vicinity of a surface of said deposition roller and thereby depositing a coating on the substrate wound around said deposition roller, whereinsaid gas supplying portion is provided in a plasma non-generating region positioned on the opposite side of the plasma generating region with respect to said deposition roller.2. The plasma CVD apparatus according to claim 1 , further comprising:a guide roller insulated from said plasma power supply and provided on the opposite side of the plasma generating region with respect to said deposition roller, the guide roller for guiding the non-conductive substrate wound around said deposition roller ...

Laminate and process for producing laminate

Provision of a laminate excellent in weather resistance and gas barrier property and also excellent in adhesion between layers and its durability; and a process for producing such a laminate. A laminate which comprises a substrate sheet containing a fluororesin, and a gas barrier layer containing, as the main component, an inorganic compound composed of a metal and at least one member selected from the group consisting of oxygen, nitrogen and carbon, the gas barrier layer being directly laminated on at least one surface of the substrate sheet; wherein in a C1s spectrum of a surface of the substrate sheet on which the gas barrier layer is laminated, that is measured by X-ray photoelectron spectroscopy, the position of the highest peak present within a binding energy range of from 289 to 291 eV is present within a range of from 290.1 to 290.6 eV.

VACUUM COATING APPARATUS

Provided is a vacuum deposition apparatus including a vacuum chamber, a deposition roller that is arranged in the vacuum chamber, and winds a substrate in a sheet form subject to deposition, and a magnetic field generation unit that is provided inside the deposition roller, and generates a magnetic field on a surface of the deposition roller, where the magnetic field generation unit includes an inside magnet arranged along an axial direction of the deposition roller and an outside magnet having a polarity opposite to the inside magnet and surrounding, in an annular form, the inside magnet, and the inside magnet is formed so as to be narrower in width along the axial direction of the deposition roller than a width of an extent of winding of the substrate W on the deposition roller in a projection viewed from a deposition surface of the substrate, and is arranged within the extent of the winding of the substrate W. 1. A vacuum deposition apparatus comprising:a vacuum chamber;a deposition roller that is arranged in the vacuum chamber, and winds a substrate in a sheet form subject to deposition;a magnetic field generation unit that is provided inside the deposition roller, and generates a magnetic field on a surface of the deposition roller;a gas supply unit that supplies a source gas into the vacuum chamber; anda power supply that generates a discharge for bringing the source gas into plasma, wherein:the magnetic field generation unit includes an inside magnet arranged along an axial direction of the deposition roller and an outside magnet having a polarity opposite to the inside magnet and surrounding the inside magnet in an annular form; andthe inside magnet is formed so as to be narrower in width along the axial direction of the deposition roller than a width of an extent of winding of the substrate on the deposition roller in a projection viewed from a deposition surface of the substrate, and is arranged within the extent of the winding of the substrate.2. The ...

Gas lock, and coating apparatus comprising a gas lock

The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Substrate conveyance roller, thin film manufacturing device and thin film manufacturing method

A substrate-conveying roller 6 A is configured to convey a substrate under vacuum, and includes a first shell 11 , an internal block 12 , and a shaft 10 . The first shell 11 has a cylindrical outer circumferential surface for supporting the substrate, and can rotate in synchronization with the substrate. The internal block 12 is disposed inside the first shell 11 , and is blocked from rotating in synchronization with the substrate. The shaft 10 extends through, and supports the internal block 12 . A clearance 15 is formed between the inner circumferential surface of the first shell 11 and the internal block 12 . A gas is introduced into the clearance 15 from the internal block 12 toward the inner circumferential surface of the first shell 11.

Deposition of ultra-thin inorganic oxide coatings on packaging

An apparatus and method for depositing an ultra-thin inorganic coating on to a packaging film substrate is disclosed. Flame pretreatment enhances the quality of the inorganic coating. Multiple coating layers may be deposited onto the substrate by passing the substrate over various one or more flame head configurations in either a stand-alone or in-line manufacturing environment.

ROLL-TO-ROLL THIN FILM COATING MACHINE

A roll-to-roll thin film coating machine of the invention includes: a first vacuum chamber into which a first precursor gas is introduced; a second vacuum chamber into which a second precursor gas is introduced; a third vacuum chamber into which a purge gas is introduced, the purge gas discharging the first precursors and the second precursors; and a transfer mechanism transferring a windable base member through the first vacuum chamber, the second vacuum chamber, and the third vacuum chamber, the transfer mechanism including a holding unit holding both end portions of the base member in a width direction thereof. 1. A roll-to-roll thin film coating machine comprising:a first vacuum chamber into which a first precursor gas is introduced;a second vacuum chamber into which a second precursor gas is introduced;a third vacuum chamber into which a purge gas is introduced, the purge gas discharging the first precursors and the second precursors; anda transfer mechanism transferring a windable base member through the first vacuum chamber, the second vacuum chamber, and the third vacuum chamber, the transfer mechanism comprising a holding unit holding both end portions of the base member in a width direction thereof, the transfer mechanism allowing the base member to alternately pass through the first vacuum chamber and the second vacuum chamber multiple times, thereby forming an atomic-layer-deposited film by depositing a stack of atomic layers on a surface of the base member.2. The roll-to-roll thin film coating machine according to claim 1 , whereinthe holding unit is a sandwich-holding unit holding both end portions of the base member in the width direction thereof.3. The roll-to-roll thin film coating machine according to claim 2 , whereinthe sandwich-holding unit sandwiches both end portions of the base member in the width direction thereof between a plurality of sandwich-holding members.4. The roll-to-roll thin film coating machine according to claim 2 , whereinthe ...

Method and system for graphene formation

A method for forming graphene includes providing a substrate and subjecting the substrate to a reduced pressure environment. The method also includes providing a carrier gas and a carbon source and exposing at least a portion of the substrate to the carrier gas and the carbon source. The method further includes performing a surface treatment process on the at least a portion of the substrate and converting a portion of the carbon source to graphene disposed on the at least a portion of the substrate.

SYSTEM AND METHOD FOR DEPOSITING OF A FIRST AND SECOND LAYER ON A SUBSTRATE

System and method for depositing a first layer on a flexible strip-shaped or sheet-shaped substrate and a second layer on the first layer. The system comprises a first deposition unit of a first type which is provided with a first supporting body, a conveying device for conveying the substrate in a conveying direction which extends parallel to a first central line of the first supporting body along the radial outer side of the supporting body. Downstream of the first deposition unit, the system furthermore comprises a second deposition unit which is provided with a second supporting body with a second central line which is in line with the first central line, and a wrapping device for keeping the substrate in a wrapped state, the substrate being wrapped around at least a part of the radial outer sides of the first supporting body and of the second supporting body. 125-. (canceled)26. A system for depositing a first layer on a flexible strip-shaped or sheet-shaped substrate and a second layer on the first layer , the system comprising:a first deposition unit of a first type for depositing the first layer, the first deposition unit including a first supporting body having a first central line and a radial outer side that is rotationally symmetrical with respect to the first central line;a conveying device for conveying the substrate in a conveying direction that extends parallel to the first central line of the first supporting body along the radial outer side of the supporting body;a second deposition unit of a second type, positioned downstream of the first deposition unit, for depositing the second layer on the first layer, the second deposition unit including a second supporting body having a second central line that is in line with the first central line and a radial outer side that is rotationally symmetrical with respect to the second central line; anda wrapping device for keeping the substrate in a wrapped state, the substrate being held wrapped around at ...

LAYER-FORMING DEVICE AND LAYER-FORMING METHOD

A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall. The plurality of injectors are sandwiched between the space-partitioning wall and the feeding pathway, such that each of the injectors is sandwiched between two adjacent through-holes from both sides of the two through-holes in the feeding direction, and the layer-forming gas is supplied toward the substrate through a layer-forming gas supply port. 1. A layer-forming device that forms a thin layer in atomic layer unit using a layer-forming gas and a reactive gas , the layer forming device comprising:a layer-forming container;a feeding mechanism configured to feed a substrate for layer-forming inside the layer-forming container;a plasma-generating electrode disposed to face a feeding pathway of the substrate during feeding, the plasma-generating electrode configured to receive a supply of electric power to generate plasma using a reactive gas inside the layer-forming container;a space-partitioning wall disposed between the feeding pathway of the substrate and the plasma-generating electrode, the space-partitioning wall forming a plasma-generating space between the plasma-generating electrode and the space-partitioning wall, the space-partitioning wall having a plurality of slit-shaped through holes for communicating the plasma-generating space and a space between the feeding ...

THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE SAME

Disclosed is a thin film deposition apparatus and a method of manufacturing an organic light-emitting display apparatus by using the thin film deposition apparatus. The thin film deposition apparatus and the method of manufacturing the organic light-emitting display apparatus using the thin film deposition apparatus reduce manufacturing time and cost. 1. A thin film deposition apparatus for forming a thin film on a substrate , the thin film deposition apparatus comprising:a deposition source configured to contain a deposition material;a deposition source nozzle unit disposed at one side of the deposition source and comprising a plurality of deposition source nozzles; anda mask disposed to face the deposition source, and comprising a plurality of patterning slits through which the deposition material passes to be deposited onto a substrate to form a plurality of sub-pixels,wherein the plurality of patterning slits comprise a first patterning slit through which the deposition material passes for forming a first one of the plurality of sub-pixels, a second patterning slit through which the deposition material passes for forming a second one of the plurality of sub-pixels, and a third patterning slit through which the deposition material passes for forming a third one of the plurality of sub-pixels, andwherein the first patterning slit has a first length extending along the moving direction, and the second patterning slit has a second length extending along the moving direction and substantially different from the first length.2. The thin film deposition apparatus of claim 1 , wherein the mask comprises a single sheet comprising the first patterning slit claim 1 , the second patterning slit claim 1 , and the third patterning slit.3. The thin film deposition apparatus of claim 1 , wherein the mask comprises a first sheet comprising a plurality of uniform slits having a substantially same length and a second sheet comprising a hole having a contour claim 1 , the second ...

Film forming apparatus

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

GRAPHENE ROLL-TO-ROLL COATING APPARATUS AND GRAPHENE ROLL-TO-ROLL COATING METHOD USING THE SAME

A graphene roll-to-roll coating apparatus and a graphene roll-to-roll coating method are provided on the basis of a continuous process. 1. A method for coating a metallic member with graphene , comprising:supplying the metallic member from a first roller to a pre-treating unit;performing a surface treatment on the metallic member supplied through the first roller in the pre-treating unit;transferring the metallic member into a graphene forming unit to form and simultaneously to coat graphene on a surface of the pre-treated metallic member; andcollecting the metallic member coated with the graphene by a second roller after the metallic member passes through the graphene forming unit.2. The coating method of claim 1 , further comprising:transferring the graphene-coated metallic member into a cooling unit to cool the graphene-coated metallic member before the graphene-coated metallic member is collected by the second roller.3. The coating method of claim 1 , wherein the metallic member includes a metal or metal alloy selected from a group consisting of Ni claim 1 , Co claim 1 , Fe claim 1 , Pt claim 1 , Au claim 1 , Al claim 1 , Cr claim 1 , Cu claim 1 , Mg claim 1 , Mn claim 1 , Mo claim 1 , Rh claim 1 , Si claim 1 , Ta claim 1 , Ti claim 1 , W claim 1 , U claim 1 , V claim 1 , Zr claim 1 , brass claim 1 , bronze claim 1 , white brass claim 1 , stainless steel claim 1 , Ge and a combination thereof.4. The coating method of claim 1 , wherein a metallic catalyst layer is formed on the surface of the metallic member.5. The coating method of claim 4 , wherein the metallic catalyst layer includes a metal or metal alloy selected from a group consisting of Ni claim 4 , Co claim 4 , Fe claim 4 , Pt claim 4 , Au claim 4 , Al claim 4 , Cr claim 4 , Cu claim 4 , Mg claim 4 , Mn claim 4 , Mo claim 4 , Rh claim 4 , Si claim 4 , Ta claim 4 , Ti claim 4 , W claim 4 , U claim 4 , V claim 4 , Zr claim 4 , brass claim 4 , white brass claim 4 , bronze claim 4 , stainless steel claim 4 , ...

INSTALLATION FOR FILM DEPOSITION ONTO AND/OR MODIFICATION OF THE SURFACE OF A MOVING SUBSTRATE

An installation having a housing, a substrate support () received in the housing, diffuser () for diffusing an inert gas towards the substrate support, and at least one head () defining an inner volume (V) opened opposite to the top, the head being provided with at least two electrodes (″) for creating an electric discharge and with an injector (″) for injecting a gaseous mixture towards the substrate. The injector has at least one injection tube (″) placed between two adjacent electrodes or between one electrode and a peripheral wall, the tube being provided with injection holes facing the substrate support, for injecting the gaseous mixture on the substrate, whereas diffuser is provided inside the head, the injection tube being placed between the substrate support and the diffuser so that, in use, the gaseous mixture is urged against the substrate by the inert gas. 21611611611611611611630130130. Installation according to claim 1 , characterized in that the housing comprises at least one means (; claim 1 , ′ claim 1 , ″) claim 1 , especially at least two means ( claim 1 , ′ claim 1 , ″) claim 1 , for a removable fixation of said at least one head (; -).313013016116116116. Installation according to claim 2 , characterized in that it comprises several heads (-) claim 2 , at least one of these heads being adapted to cooperate with at least one fixation means (; claim 2 , ′ claim 2 , ″).4. Installation according to claim 3 , characterized in that at least two heads claim 3 , amongst these several heads claim 3 , are different.5121316. Installation according to claim 2 , characterized in that the housing comprises opposite peripheral walls claim 2 , in particular front () and rear () walls claim 2 , and means () for a removable fixation extend between said opposite peripheral walls and cooperate with side walls of said head.6909189242. Installation according to claim 1 , characterized in that it comprises a source () of said inert gas claim 1 , means () for flowing said ...

Reaction apparatus and method for manufacturing a cigs absorber of a thin film solar cell

The present invention provides an apparatus and a method for manufacturing a CIGS absorber of a thin film solar cell. The apparatus includes a supply chamber configured to provide a flexible substrate coated with precursors. The apparatus further includes a reaction chamber coupled to the supply chamber for at least subjecting the precursors on the flexible substrate to a reactive gas at a first state to form an absorber material. Additionally, the apparatus includes a gas-balancing chamber filled with the reactive gas at a second state. The gas-balancing chamber is communicated with the reaction chamber for automatically updating the first state of the reactive gas to the second state. Moreover, the apparatus includes a control system to maintain the second state of the reactive gas in the gas-balancing chamber at a preset condition and to adjust the transportation of the flexible substrate through the reaction chamber.

MULTI-SHOWERHEAD CHEMICAL VAPOR DEPOSITION REACTOR, PROCESS AND PRODUCTS

A method of forming a kilometer(s)-length high temperature superconductor tape by feeding a textured tape from roll-to-roll through a reactor chamber, flowing high temperature superconductor precursors from an elongated precursor showerhead positioned in the chamber the elongation in a direction along the tape; flowing gas from first and second elongated gas curtain shower heads on either side of the precursor showerhead; and illuminating the upper surface of the tape with illumination from sources on opposing sides of the reactor, the illumination sources positioned so as to allow illumination to pass under a respective one of the curtain shower heads and under the precursor showerhead to the upper surface of the tape. 1. A multiple showerhead chemical vapor deposition reactor comprising:a reactor chamber enclosed by a chamber wall, the chamber having a length and a width, the length being greater than the width, the chamber wall having entry and exit seal ports at opposite ends of the chamber in the length direction for receiving and delivering a tape during deposition on said tape;a support plate within the chamber for supporting said tape, the support plate having a length and a width, the length being greater than the width;a precursor showerhead positioned within the chamber, the precursor showerhead having a length and a width, the length being greater than the width, the precursor showerhead positioned over the support plate with the length dimension of the precursor showerhead parallel to the length dimension of the support plate;first and second gas curtain shower heads positioned on either side of the precursor showerhead, the first and second gas curtain shower heads each having a length and a width, the length being longer than the width, the length dimensions of the gas curtain showerheads aligned parallel to the length dimension of the precursor showerhead;one or more first illumination sources positioned on a first side of the width of the chamber ...

Vacuum processing device

A device of executing vacuum processing has a chamber capable of keeping the chamber as a whole in a depressurized state; a feeding roller so disposed as to hang a reinforcement fiber down in the chamber; a processor so disposed in the chamber as to pass the reinforcement fiber hung down in the chamber through the processor; a capture device so disposed as to capture and keep a leading end of the reinforcement fiber passing the processor and vertically falling down in place; a winding bobbin configured to wind the reinforcement fiber processed by the processor; and a resilient cord withdrawn in synchronism with the winding bobbin from a first position where the resilient cord surrounds the leading end kept in place by the capture device to a second position where the resilient cord gets in contact with and leads the reinforcement fiber to the winding bobbin.

Method and an apparatus for performing a plasma chemical vapour deposition process and a method

A method and apparatus for performing a plasma chemical vapour deposition process including a mainly cylindrical resonator having an outer cylindrical wall and an inner coaxial cylindrical wall defining therebetween a resonant cavity operable at an operating frequency. The resonant cavity extends in a circumferential direction around a cylindrical axis of the inner and outer cylindrical wall. The outer cylindrical wall includes an input port connectable to an input waveguide. The inner cylindrical wall includes slit sections extending in a circumferential direction around the cylindrical axis. A greatest dimension defining the aperture of the slit sections is smaller than half the wavelength of the operating frequency.

NOZZLE EXIT CONTOURS FOR PATTERN COMPOSITION

A deposition nozzle is provided that includes offset deposition apertures disposed between exhaust apertures on either side of the deposition apertures. The provided nozzle arrangements allow for deposition of material with a deposition profile suitable for use in devices such as OLEDs. 1. A method of fabricating a deposition device , the method comprising:dicing a wafer pair to form micronozzle array channels comprising a plurality of deposition apertures along the edges of each wafer, each aperture being defined by the intersection of a channel and a dicing line; and a first exhaust aperture;', 'a second exhaust aperture;', 'a first deposition aperture disposed between the first exhaust aperture and the second exhaust aperture and closer to the first exhaust aperture than the second aperture; and', 'a second deposition aperture disposed between the first exhaust aperture and the second exhaust aperture and closer to the second exhaust aperture than the first exhaust aperture,, 'bonding the wafer pair to form a deposition nozzle comprisingwherein the second deposition aperture is offset from the first deposition aperture along an axis of the nozzle.2. The method of claim 1 , wherein claim 1 , subsequent to bonding the wafer pair to form a deposition nozzle claim 1 , for any line drawn between and perpendicular to the first exhaust aperture and the second exhaust aperture claim 1 , the line crosses no more than one of the first deposition aperture and the second deposition aperture.3. The method of claim 1 , wherein claim 1 , subsequent to bonding the wafer pair to form a deposition nozzle claim 1 , the second deposition aperture is offset from the first deposition aperture along an axis of the nozzle.4. The method of claim 1 , wherein claim 1 , subsequent to bonding the wafer pair to form a deposition nozzle claim 1 , there are no more than two deposition apertures disposed between the first exhaust aperture and the second exhaust aperture.5. The method of claim 1 ...

METHOD OF COATING A FLEXIBLE SUBSTRATE IN A R2R DEPOSITION SYSTEM, AND VAPOR DEPOSITION SYSTEM

A method of coating a flexible substrate in a roll-to-roll deposition system is described. The method includes unwinding the flexible substrate from an unwinding roll, the flexible substrate having a first coating on a first main side thereof; measuring a lateral positioning of the first coating while guiding the flexible substrate to a coating drum; adjusting a lateral position of the flexible substrate on the coating drum depending on the measured lateral positioning of the first coating; and depositing a second coating on the flexible substrate, particularly on a second main side of the flexible substrate opposite the first main side. Further described is a vacuum deposition apparatus for conducting the methods described herein. 1. A method of coating a flexible substrate in a roll-to-roll deposition system , comprising:unwinding the flexible substrate from an unwinding roll, the flexible substrate having a first coating on a first main side;measuring a lateral positioning of the first coating while guiding the flexible substrate to a coating drum;adjusting a lateral position of the flexible substrate on the coating drum depending on the measured lateral positioning of the first coating; anddepositing a second coating on the flexible substrate.2. The method of claim 1 , wherein the second coating is deposited on a second main side of the flexible substrate opposite the first main side.3. The method of claim 1 , wherein the lateral position of the flexible substrate on the coating drum is adjusted by axially moving the unwinding roll depending on the lateral positioning of the first coating.4. The method of claim 1 , wherein the measuring of the lateral positioning of the first coating comprises scanning a position of a side edge of the first coating.5. The method of claim 1 , wherein the lateral position of the flexible substrate is adjusted such that the second coating is deposited on a second main side of the flexible substrate in alignment with the first ...

Hybrid dielectric film for high temperature application

A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.

GAS BARRIER FILM AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a gas barrier film includes depositing an atomic layer deposition film on a surface of a plastic substrate to form a gas barrier laminate, using atomic layer deposition; depositing a curable resin layer on a support from which the layer is peelable, to form an overcoat laminate; laminating the overcoat laminate to the gas barrier laminate, with the atomic layer deposition film and the curable resin layer facing each other, and transferring the curable resin layer onto the atomic layer deposition film; curing the curable resin layer through application of heat or an active energy beam; and releasing the curable resin layer from the support. 1. A method of manufacturing a gas barrier film , comprising:depositing an atomic layer deposition film on a surface of a plastic substrate to form a gas barrier laminate, using atomic layer deposition;depositing a curable resin layer on a support from which the curable resin layer is peelable, to form an overcoat laminate;laminating the overcoat laminate to the gas barrier laminate, with the atomic layer deposition film and the curable resin layer facing each other, and transferring the curable resin layer onto the atomic layer deposition film;curing the curable resin layer through application of heat or an active energy beam; andreleasing the curable resin layer from the support.2. The method of manufacturing a gas barrier film of claim 1 , wherein the relationship 10 t Подробнее

Laminates and gas barrier films

A laminate includes a substrate; an atomic layer deposition film that is disposed on at least one surface of the substrate, and is made of an inorganic material; and a protective film that is bonded to and covers the atomic layer deposition film, and has an adhesive layer that is in contact with the atomic layer deposition film.

METHOD AND APPARATUS FOR DEPOSITING ATOMIC LAYERS ON A SUBSTRATE

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. 1. Method of depositing an atomic layer on a substrate , which method comprises supplying a precursor gas from a precursor-gas supply comprised by a deposition head towards the substrate; having the precursor gas react near , e.g. on , the substrate so as to form an atomic layer , the deposition head having an output face that at least partly faces the substrate during depositing the atomic layer , the output face being provided with the precursor-gas supply and having a substantially rounded shape defining a movement path of the substrate , wherein the method further comprises rotating the deposition head while supplying the precursor gas from the precursor gas supply; thus depositing a stack of atomic layers on the substrate while rotating the deposition head in one direction , wherein a gas bearing defines , relative to the substrate , a gap distance in combination with a gas bearing pressure that is in use provided in the gas bearing pressure arrangement provides a stiffness of the gas bearing between 10̂3 and 10̂10 N/m3.2. Method according to claim 1 , comprising moving the substrate along an claim 1 , at least partly rounded claim 1 , circumference of a rotatable drum that comprises the deposition head.3. Method according to claim 1 , wherein the precursor-gas supply extends claim 1 , along the curved output face claim 1 , in a direction along or inclined with the axis of rotation of the deposition head; or wherein the precursor-gas supply is shaped in elongated form along claim 1 , or inclined to claim 1 , an axial direction of the ...

Laminated film, organic electroluminescence device, photoelectric converter, and liquid crystal display

Provided is a laminate film having a substrate and at least one thin film layer which has been formed on at least one surface of the substrate, in which at least one of the thin film layer contains silicon atoms, oxygen atoms, and carbon atoms.

ATOMIC LAYER DEPOSITION APPARATUS, FILM-FORMING METHOD USING ATOMIC LAYER DEPOSITION APPARATUS, AND CLEANING METHOD OF ATOMIC LAYER DEPOSITION APPARATUS

A plasma atomic layer deposition apparatus includes: a source gas supply port functioning also as a cleaning gas supply port provided on a first side wall of a film-forming container; and a source gas exhaust port functioning also as a cleaning gas exhaust port provided on a second side wall opposed to the first side wall of the film-forming container. 1. An atomic layer deposition apparatus comprising:a film-forming container;a lower electrode arranged on a lower surface of the film-forming container;an upper electrode arranged on an upper surface of the film-forming container and configured to generate plasma discharge with the lower electrode;a gas supply port provided on a first side wall of the film-forming container intersecting with the lower surface and the upper surface;a gas exhaust port provided on a second side wall of the film-forming container intersecting with the lower surface and the upper surface and opposed to the first side wall;a first adhesion preventing member in contact with both the film-forming container and the lower electrode; anda second adhesion preventing member in contact with both the film-forming container and the upper electrode.2. The atomic layer deposition apparatus according to claim 1 ,wherein a gap is present between the film-forming container and the lower electrode, andthe first adhesion preventing member closes the gap.3. An atomic layer deposition apparatus comprising:a lower electrode for holding a substrate;an upper electrode having an opposing surface opposed to the lower electrode and configured to generate plasma discharge with the lower electrode;a film-forming container including a film-forming space configured of an upper space of the lower electrode and a lower space of the upper electrode;a lower adhesion preventing member provided between a lower space of the lower electrode and the film-forming space;an upper adhesion preventing member attached to the upper electrode;a source gas supply port provided on a ...

Method and Apparatus for Fabricating Fibers and Microstructures from Disparate Molar Mass Precursors

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.

FILM-FORMING APPARATUS AND FILM-FORMING METHOD

There is provided a film-forming apparatus including a roll-to-roll mechanism and a heating unit. The roll-to-roll mechanism is configured to transport a film-forming target and includes a tensile force relaxation unit configured to relax a tensile force applied to the transported film-forming target. The heating unit is configured to heat the film-forming target transported by the roll-to-roll mechanism. 1. An apparatus , comprising:a roll-to-roll mechanism configured to transport a film target made of copper, and that includes a tensile force relaxation unit configured to relax a tensile force applied to the transported film target to be equal to or smaller than a tensile force at which twinning deformation occurs in the copper; anda heating unit configured to heat the film target transported by the roll-to-roll mechanism.2. The apparatus according to claim 1 , wherein the tensile force relaxation unit includes a pinch roll configured to sandwich the film target.3. The apparatus according to claim 2 , whereinthe pinch roll includesa guide roll configured to guide transport of the film target, andan elastic roll that has a roll surface made of an elastic material, and the elastic roll is pushed by the guide roll such that the film target is sandwiched between the elastic roll and the guide roll.4. The apparatus according to claim 1 , wherein the tensile force relaxation unit includes a multiple-stage roll that includes a plurality of rolls.5. The apparatus according to claim 1 , further comprising a slack detection sensor configured to detect an amount of slack of the film target claim 1 , whereinthe tensile force relaxation unit is further configured to adjust the tensile force applied to the film target in accordance with an output of the slack detection sensor.6. The apparatus according to claim 1 , wherein the tensile force relaxation unit is further configured to relax the tensile force applied to the film target to be smaller than 1 MPa.7. The apparatus ...

Deposition platform for flexible substrates and method of operation thereof

An apparatus for processing a flexible substrate is described. The apparatus includes a vacuum chamber having a first chamber portion, a second chamber portion and a third chamber portion, an unwinding shaft for supporting the flexible substrate to be processed and a winding shaft supporting the flexible substrate having the thin film deposited thereon, wherein the unwinding shaft and the winding shaft are arranged in the first chamber portion, at least one gap sluice for separating the first chamber portion from the second chamber portion, wherein the gap sluice is configured such that the flexible substrate can move there through and the gap sluice can be opened and closed for providing a vacuum seal, a coating drum having a rotation axis and a curved outer surface for guiding the substrate along the curved outer surface through a first vacuum processing region and at least one second vacuum processing region, wherein a first portion of the coating drum is provided in the second chamber portion and the remaining portion of the coating drum is provided in the third chamber portion, a first processing station corresponding to the first processing region and at least one second processing station corresponding to the at least one second vacuum processing region, wherein the first processing station and the second processing station each includes a flange portion for providing a vacuum connection. Further, the third chamber portion has a convex shaped chamber wall portion, wherein the third chamber portion has at least two openings provided therein, particularly wherein the at least two openings are essentially parallel to the convex shaped chamber wall portion; and wherein the first processing station and the at least one second processing station are configured to be received in the at least two openings, wherein the flange portions of the first processing station and the second processing station provide a vacuum tight connection with the third chamber.

METHOD AND DEVICE FOR DEPOSITING A COATING ON A CONTINUOUS FIBRE

A process for depositing a coating on a continuous carbon or silicon carbide fibre from a coating precursor, includes at least heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature enabling the coating to be formed on the segment from the coating precursor. 1. A process for depositing a coating on a continuous fibre of carbon or silicon carbide from a precursor of the coating , the process comprising:heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature allowing the coating to form on the segment from the coating precursor, whereinthe segment of the fibre is in the presence of a gaseous phase of the coating precursor, the coating being formed by chemical vapor infiltration, the gaseous phase of the coating precursor being obtained by boiling a liquid phase of the coating precursor, the boiling resulting from contact between a hot portion of the fibre contiguous to the segment present in the microwave field and the liquid phase of the coating precursor, or whereinthe segment of fibre is in the presence of a supercritical phase of the precursor of the coating and the coating is formed by supercritical phase chemical deposition.2. The process as claimed in claim 1 , wherein claim 1 , when heating the segment of fibre claim 1 , the segment is in a first position claim 1 , and the process further comprises running the fibre so as to move the segment to a second position in which the segment is out of the microwave field.3. The process as claimed in claim 2 , wherein the running of the fibre is carried out continuously or semi-continuously.4. The process as claimed in claim 2 , wherein the unwinding of the fibre comprises unwinding the fibre from a first mandrel and winding the fibre onto a second mandrel.5. The process as claimed in claim 1 , wherein the coating is an interphase ...

Laminate body, gas barrier film, method of manufacturing laminate body, and laminate body manufacturing apparatus

A laminate body of the present invention includes a base material, an atomic layer deposition film that is formed along the outer surface of the base material, and an overcoat layer that covers the atomic layer deposition film with a film having a mechanical strength higher than that of the atomic layer deposition film.

Web substrate treating system

The objective of the present invention is to provide a web substrate treating system that allows a web substrate to be wound around, or unwound from, a roller in a direction perpendicular to the ground to prevent particles, arcing, and the like. The present invention provides a web substrate treating system comprising: a loading roller (100) around which a web substrate (W) to be treated is wound; at least one rotary drum (200) that rotates to convey the web substrate (W) unwound from the loading roller (100) while supporting the web substrate (W); an unloading roller (300) around which the web substrate (W) treated via the rotary drums (200) is wound; and substrate treating units (400) arranged around the rotary drum (200) to treat the web substrate (W) conveyed while being supported on the outer circumferential surface of the rotary drum (200), whereby it is possible to prevent particles, arcing, and the like.

Graphene-Copper Structure and Manufacturing Method

A composite structure comprises a copper layer having a thickness of no larger than 25 μm, and first and second graphene layers sandwiching the copper layer. 1. A composite structure comprising:a copper layer having a thickness of no larger than 25 μm; andfirst and second graphene layers sandwiching the copper layer.2. The composite structure according to claim 1 , wherein at least one of the first graphene layer and the second graphene layer has a thickness that is less or equal to 5 nm.3. The composite structure according to claim 1 , wherein at least one of the first graphene layer and the second graphene layer has a thickness that is less or equal to 2 nm.4. The composite structure according to claim 1 , wherein at least one of the first graphene layer and the second graphene layer is a graphene monolayer or a graphene bi-layer.5. The composite structure according to claim 1 , wherein the copper layer has a thickness of 10 μm or less.6. The composite structure according to claim 1 , wherein the copper layer has a thickness of 5 μm or less.7. The composite structure according to claim 1 , wherein at least part of the copper layer has a (111) crystallographic orientation.8. The composite structure according to claim 1 , wherein the copper layer has a grain size of at least 1 μm.9. The composite structure according to claim 1 , wherein the copper layer has a grain size of at least 5 μm.10. The composite structure according to claim 1 , wherein at least one of the first graphene layer and the second graphene layer comprises metal atoms.11. The composite structure according to claim 10 , wherein the metal atoms are ring-centered on graphene rings.12. The composite structure according to claim 1 , further comprising a plurality of composite structures in a stacked configuration.13. The composite structure according to claim 12 , wherein a first graphene layer of a first structure of the plurality of structures contacts a second graphene layer of a second structure of ...

FIXED AND PORTABLE COATING APPARATUSES AND METHODS

A system and method for depositing a coating may comprise a coating chemical reactor, surface activation component, and a deposition component. A target surface may be prepared for deposition with the surface activation component. The coating chemical reactor may comprise a coating chemical dispenser and a coating chemical verifier that prepares the coating chemical for deposition. The coating chemical verifier may utilize an optical excitation source and at least one optical detector, wherein chemical substances are identified by unique signatures composed of binary code. The coating chemical may be received by the deposition component to depositing the coating chemical on the target surface. 1. A method for depositing a coating , the method comprising:activating a surface of the substrate with a surface activator, wherein surface activator generates ozone, oxygen, hydrogen peroxide, halogens, or other oxidizing species that render the surface energetically reactive after treatment;preparing coating chemicals with a coating reactor for coating the substrate with a desired coating, wherein the coating reactor comprises a dispenser supplying the coating chemicals and a chemical verifier validating the coating chemicals;validating the coating chemicals to ensure correct, desired chemicals are supplied for the desired coating; andcoating the surface with the desired coating, wherein the surface covalently binds with molecules of the coating chemicals.2. The method of claim 1 , wherein the activating and coating steps are both performed in a combined surface activation and deposition chamber.3. The method of claim 1 , wherein the coating step is performed in a first chamber and the activating step is performed in a second chamber separate from the first chamber.4. The method of claim 1 , further comprising the step of venting during the activating or coating step to control an environment during the activating or coating step.5. The method of claim 1 , further ...

VAPOR DEPOSITION DEVICE AND METHOD EMPLOYING PLASMA AS AN INDIRECT HEATING MEDIUM

A vapor deposition device and a method for depositing a coating on a substrate are disclosed. The device includes a heating chamber for containing plasma and an evaporant chamber for containing an evaporant source. Evaporant is generated by heating of the evaporant source by the plasma. The heating chamber is both separated from the evaporant chamber and in thermally conductive connectivity with the evaporant chamber. The method includes supplying plasma to a heating chamber; heating an evaporant source by transfer of heat from the plasma to in an amount sufficient to generate evaporant from the evaporant source; and condensing the evaporant or a reaction product thereof on a surface of the substrate to form a coating thereon. The plasma is maintained in isolation from the evaporant source and the evaporant. 1. A vapor deposition device for forming a coating on a substrate and that utilizes plasma as an indirect heating medium to generate evaporant from an evaporant source , said device comprising (i) a heating chamber for containing said plasma and (ii) an evaporant chamber for containing an evaporant source;wherein an evaporant is generated by heating of said evaporant source by said plasma and wherein said heating chamber is both separated from said evaporant chamber and in thermally conductive connectivity with said evaporant chamber.2. The device of further comprising at least one plasma source.3. The device of further comprising a substrate coating station adjacent to said evaporant chamber.4. The device of further comprising a substrate coating station within said evaporant chamber.5. The device of wherein said substrate coating station comprises a roll-to-roll carrier including a feed roll and a take-up roll for passing said substrate within said substrate coating station.6. The device of further comprising at least one ion source for treating said coating or a surface of said substrate with an ion stream.7. The device of further comprising at least one ion ...

SYSTEM AND METHODS FOR PROCESSING A SUBSTRATE

According to the present disclosure, a substrate processing apparatus for processing a flexible substrate including a vacuum chamber configured for being evacuated and being configured for having a process gas provided therein, a processing module adapted to process the flexible substrate, wherein the processing module is provided within the vacuum chamber, and a discharging assembly configured to generate a flow of charged particles to discharge the flexible substrate is provided. The discharging assembly is configured to generate an electric field for ionizing a processing gas. 1. A substrate processing apparatus for processing a flexible substrate , comprising:a vacuum chamber configured for being evacuated and being configured for having a process gas provided therein;a processing module adapted to process the flexible substrate, wherein the processing module is provided within the vacuum chamber; and,a discharging assembly configured to generate a flow of charged particles to discharge the flexible substrate, wherein the discharging assembly is configured to generate an electrical field for ionizing the processing gas.2. The substrate processing apparatus according to claim 1 , wherein the discharging assembly includes one or more spikes configured for being provided with a high voltage.3. The substrate processing apparatus according to claim 2 , wherein the spikes are provided on one or more lances.4. The substrate processing apparatus according to claim 3 , wherein at least one lance is positioned to face a first surface of the substrate.5. The substrate processing apparatus according to claim 4 , wherein at least one other lance is positioned to face a second surface of the substrate that is opposite to the first surface of the substrate.6. The substrate processing apparatus according to any of claim 1 , further including a power supply connected to the one or more spikes for providing a high voltage.7. The substrate processing apparatus according to claim 1 ...

Roll of gas-barrier film, and process for producing gas-barrier film

A roll of a gas barrier film may be obtained by winding a gas barrier film including a base and a gas barrier layer in a direction orthogonal to a width of the film. The gas barrier layer may contain silicon, oxygen, and carbon atoms. A surface of the base, opposite to a side of the gas barrier layer, may have protrusions A having a height of 10 nm or more and less than 100 nm from a roughness center plane at a density of 500 to 10,000/mm 2 , and protrusions B having a height of 100 nm or more from a roughness center plane at a density of 0 to 500/mm 2 . The base may have a haze of 1% or less measured in accordance with JIS K-7136. A flatness index defined as the number of sites raised 1 mm or more is within a range of from 0 to 5.

Method of making inorganic or inorganic/organic hybrid films

A method for forming an inorganic or hybrid organic/inorganic layer on a substrate, which method comprises vaporizing a metal alkoxide, condensing the metal alkoxide to form a layer atop the substrate, and contacting the condensed metal alkoxide layer with water to cure the layer is disclosed.

METHOD FOR PRODUCING GRAIN-ORIENTED ELECTRICAL SHEET AND CONTINUOUS FILM-FORMING DEVICE

Provided is a method for producing a grain-oriented electrical steel sheet with which it is possible to obtain a grain-oriented electrical steel sheet exhibiting excellent magnetic properties. This method for prod producing a grain-oriented electrical steel sheet involves subjecting a surface of a grain-oriented electrical steel sheet which does not have a forsterite film thereon to a film formation treatment, and performing the film formation treatment while imparting tension to the grain-oriented electrical steel sheet which does not have a forsterite film thereon. 113.-. (canceled)14. A method of producing a grain oriented electrical steel sheet , the method comprising performing coating formation treatment on a surface of a grain oriented electrical steel sheet having no forsterite coating ,wherein the coating formation treatment is performed with tension being applied to the grain oriented electrical steel sheet having no forsterite coating.15. The method of producing a grain oriented electrical steel sheet according to claim 14 , wherein the tension applied to the grain oriented electrical steel sheet having no forsterite coating is not less than 0.10 MPa and not more than 20.00 MPa.16. The method of producing a grain oriented electrical steel sheet according to claim 14 , wherein the tension applied to the grain oriented electrical steel sheet having no forsterite coating is not less than 0.50 MPa and not more than 10.00 MPa.17. The method of producing a grain oriented electrical steel sheet according to claim 14 , wherein the coating formation treatment is carried out by a chemical vapor deposition method or a physical vapor deposition method.18. The method of producing a grain oriented electrical steel sheet according to claim 17 , wherein the coating formation treatment is carried out under a reduced pressure condition.19. A continuous coating formation apparatus comprising:a coating formation chamber for continuously performing coating formation treatment ...

APPARATUS FOR PROCESSING OF A MATERIAL ON A SUBSTRATE AND METHOD FOR MEASURING OPTICAL PROPERTIES OF A MATERIAL PROCESSED ON A SUBSTRATE

According to one aspect of the present disclosure an apparatus for processing of a material on a substrate is provided. The apparatus includes a vacuum chamber and a measuring arrangement configured for measuring one or more optical properties of the substrate and/or the material processed on the substrate, the measuring arrangement including at least one sphere structure located in the vacuum chamber. 1. An apparatus for processing of a material on a substrate , comprising:a vacuum chamber; anda measuring arrangement configured for measuring one or more optical properties of the substrate and/or the material on the substrate, the measuring arrangement comprising at least one sphere structure located in the vacuum chamber.2. The apparatus of claim 1 , wherein the one or more optical properties are selected from the group consisting of: a reflectance and a transmission.3. The apparatus of claim 1 , wherein the sphere structure is an integrating sphere.4. The apparatus of claim 1 , further including a substrate support in the vacuum chamber claim 1 , wherein the substrate support is configured for supporting the substrate.5. The apparatus of claim 4 , wherein the substrate support includes a first roller and a second roller disposed parallel with a gap formed between the first roller and the second roller for transporting the substrate.6. The apparatus of claim 5 , wherein the sphere structure is positioned in a region between the first roller and the second roller during the measuring one or more optical properties of the substrate and/or the material on the substrate.7. The apparatus of claim 1 , wherein the measuring arrangement includes a light source at the sphere structure and a first detector at the sphere structure for a reflectance measurement of the substrate and/or the material on the substrate.8. The apparatus of claim 1 , wherein the measuring arrangement includes a light source at the sphere structure and a second detector for a transmission measurement ...

DEPOSITION OF HIGH-QUALITY MIXED OXIDE BARRIER FILMS

The present disclosure relates to metal oxide barrier films and particularly to methods for depositing high-quality barrier films. Methods are disclosed that are capable of producing thin barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m·day) after exposure to extreme temperatures and humidity. Methods are disclosed for making such films on a continuous web. 1. A method of making a mixed oxide barrier film on a substrate , the method comprising:exposing a portion of the substrate to one of a metal alkoxide or a metal-containing Lewis acid;exposing the same portion of the substrate to an oxygen-containing plasma;exposing the same portion of the substrate to the other of the metal alkoxide or the metal-containing Lewis acid; andexposing the same portion of the substrate again to an oxygen-containing plasma, to thereby form a mixed oxide barrier film, wherein all of the above steps are performed at a temperature less than 200° C.2. The method of claim 1 , wherein the metal alkoxide comprises titanium isopropoxide (TTIP).3. The method of claim 1 , wherein the metal-containing Lewis acid comprises a metalorganic or a metal halide.4. The method of claim 3 , wherein the metal halide comprises aluminum chloride.5. The method of claim 3 , wherein the metalorganic comprises trimethylaluminum (TMA).6. The method of claim 1 , wherein a source gas for the oxygen-containing plasma comprises carbon dioxide claim 1 , nitric oxide claim 1 , nitrogen dioxide claim 1 , or combinations thereof.7. The method of claim 1 , wherein the mixed oxide barrier film comprises alumina and titania.8. The method of claim 1 , wherein exposing a portion of the substrate to one of a metal alkoxide or a metal-containing Lewis acid comprises exposing the substrate to one of the metal alkoxide or the metal-containing Lewis acid in about five or fewer complete plasma-enabled atomic layer deposition (ALD) cycles before exposing the same portion of the substrate to the other one of the ...

ROLL TO ROLL ATOMIC LAYER DEPOSITION APPARATUS

Proposed is a roll to roll atomic layer deposition apparatus, which deposits an atomic layer on a porous material, the roll to roll atomic layer deposition apparatus including: a pair of winding rollers disposed to be spaced apart from each other and configured to allow two opposite side portions of the porous material in a longitudinal direction to be wound therearound, the pair of winding rollers being configured to reciprocatingly move the porous material in the longitudinal direction; one or more source substance supply units disposed between the pair of winding rollers and configured to supply a source substance to the porous material; and one or more pumps configured to suck the source substance supplied from the one or more source substance supply units, in which the one or more pumps are disposed to correspond to the one or more source substance supply units.

Functional film manufacturing method and functional film

The present invention relates to a functional film and a method for manufacturing the same, the functional film being organically and inorganically laminated to have a desired function such as high gas barrier performance and having high adhesiveness between inorganic and organic layers. The organic layer on top of the inorganic layer contains an organic solvent; an organic compound formed of the organic layer; and a silane coupling agent with a concentration between 0.1 and 25 percentages by mass excluding the organic solvent, the organic layer uses a coating material not containing a pH controller, and the organic layer is formed through curing via a heating process after coating.

THIN METAL COATING METHODS FOR HIGH CONDUCTIVITY GRAPHANE-METAL COMPOSITES AND METHODS OF MANUFACTURE

Embodiments of the present technology include graphane-metal composites. An example graphane-metal composite includes a porous metal foam substrate, a graphane layer deposited to the porous metal foam substrate, a metal layer applied to the graphane layer, and another graphane layer deposited to the metal layer; the multilayered porous metal foam substrate being compressed to form a graphane-metal composite, and depositing a thin metal coating on an outer surface of the porous metal foam substrate or an outer surface of the graphane using any of physical vapor deposition and chemical vapor deposition. 1. A method for manufacturing a graphane-metal composite comprising: 'compressing the porous metal foam substrate with graphane applied to form a graphane-metal composite; and', 'depositing graphane onto a porous metal foam substrate;'}depositing a thin metal coating on an outer surface of the graphane-metal composite using any of physical vapor deposition and chemical vapor deposition.2. The method according to claim 1 , wherein any of the outer surface of the porous metal foam substrate and the outer surface of the graphane are electrically conductive claim 1 , allowing for physical vapor deposition of a target metal or metal alloy thereupon.3. The method according to claim 2 , further comprising:inducing a vacuum around the graphane-metal composite; andadding energy within the vacuum to promote evaporation of the target metal or metal alloy using any of high temperature for thermal evaporate deposition, high-power laser for pulsed laser deposition, high-power electric arc discharge for cathodic arc deposition, highly energetic pulsed electron beam for pulsed electron deposition, and high energy electron for electron beam physical vapor deposition.4. The method according to claim 1 , wherein the depositing graphane to a porous metal foam substrate is by chemical vapor deposition.5. The method according to claim 1 , wherein the depositing graphane to a porous metal ...

COMMON DEPOSITION PLATFORM, PROCESSING STATION, AND METHOD OF OPERATION THEREOF

An apparatus for depositing a thin film on a substrate is described. The apparatus includes a substrate support having an outer surface for guiding the substrate along a surface of the substrate support through a first vacuum processing region and at least one second vacuum processing region, a first deposition sources corresponding to the first processing region and at least one second deposition source corresponding to the at least one second vacuum processing region. The apparatus further includes one or more vacuum flanges providing at least a further gas outlet between the first deposition source and the at least one second deposition source. 1. An apparatus for depositing a thin film on a substrate , comprising:a substrate support having a curved outer surface; an electrode having a surface opposing the curved outer surface of the substrate support;', 'a processing gas inlet and a processing gas outlet arranged at opposing sides of the surface of the electrode;', 'a first separation wall surrounding the surface of the electrode, the processing gas inlet, and the processing gas outlet; and', 'at least one separation gas inlet having one or more separation gas inlet openings surrounding the surface of the electrode, the processing gas inlet, the processing gas outlet, and the first separation wall; and, 'a first deposition source corresponding to a first processing region at the curved outer surface and at least one second deposition source corresponding to at least one second vacuum processing region at the curved outer surface, wherein at least the first deposition source comprisesa first vacuum flange for evacuation of the processing gas of the first deposition source.2. The apparatus according to claim 1 , further comprising:one or more vacuum flanges providing at least a further gas outlet between the first deposition source and the at least one second deposition source, wherein the one or more vacuum flanges are provided between a first separation gas ...

Nanosieve composite membrane

The invention is directed to a nanosieve composite membrane, a method for preparing a nanosieve composite membrane, a roll-to-roll apparatus for carrying out the method, and a method for separating a feed flow with particulate matter. The nanosieve composite of the invention comprises an inorganic nanosieve layer supported on a porous polymer membrane substrate and a metallic adhesion layer or underlayer between the inorganic nanosieve layer and the polymer substrate, wherein said polymer membrane comprises an inorganic coating such that the polymeric support is sandwiched between the inorganic coating and the inorganic sieve layer, and wherein said inorganic nanosieve layer has an average pore diameter as determined by scanning electron microscopy of 200 nm or less.

METHOD FOR DEPOSITING A HTS ON A TAPE, WITH A SOURCE RESERVOIR, A GUIDE STRUCTURE AND A TARGET RESERVOIR ROTATING ABOUT A COMMON AXIS

A method for depositing a high temperature superconductor (=HTS) onto a tape (), in particular by pulsed laser deposition (=PLD). The tape is wound off a source reservoir (), heated and transported through a deposition zone (), and wound up at a target reservoir (). HTS material () is deposited onto the heated transported tape in the deposition zone, and the tape is led through the deposition zone by a guide structure (). During deposition of the HTS material, the source reservoir, the guide structure and the target reservoir are rotated around a common rotation axis (), such that parts of the tape rotating along with the guide structure repeatedly cross the deposition zone. This permits depositing a HTS onto a tape, in particular by PLD, which allows a high quality of the deposited HTS material for long tape lengths. 1. Method for depositing a high temperature superconductor (HTS) onto a tape , comprising:winding the tape off a source reservoir, heating and transporting the tape through a deposition zone, and winding the tape up at a target reservoir, wherein HTS material is deposited onto the heated transported tape in the deposition zone, and wherein the tape is led through the deposition zone with a guide structure, wherein, during the deposition of the HTS material, the source reservoir, the guide structure and the target reservoir are rotated around a common rotation axis such that parts of the tape rotating along with the guide structure repeatedly cross the deposition zone.2. Method according to claim 1 , whereinthe tape is led by the guide structure in a plurality of elongated windings, with long sides of the elongated windings extending at least substantially in parallel with the rotation axis.3. Method according to claim 2 , wherein for at least one long side of each elongated winding claim 2 , a normal of a flat front side of the tape is oriented radially outward with respect to the rotation axis claim 2 ,and wherein, over an entirety of the elongated ...

HIGH-TEMPERATURE, HIGH-PERFORMANCE CAPACITOR THIN FILM CONTINUOUS PRODUCTION DEVICE AND METHOD

Disclosed are a high-temperature, high-performance capacitor thin film continuous production device and method. A thin film () to be processed is released by an unwinding roller (), the position of the thin film to be processed is adjusted by an unwinding adjustment roller (), such that the thin film is guaranteed to be located at the middle position of a discharge gap (), and the thin film to be processed then passes through a plasma deposition area, the position of the processed thin film () is adjusted by a winding adjustment roller (), and the processed thin film, after adjustment, is wound by a winding roller () after being drawn by a drawing roller (), with the winding roller being an inflatable roller. The steady and controllable movement of the thin film in the deposition area is achieved. Large-scale continuous production, capable of matching the existing production speed of a polymer capacitor thin film, can be achieved using the device, wherein same has the advantages of flexible configuration, low environmental requirements, strong universality, a fast processing speed, low production costs and no pollution. 1124568101191081191210111381310131431621245. A kind of high-temperature , high-performance capacitor thin film continuous production device , characterized in that consisting of an unwinding roller () , an unwinding adjustment roller () , a plasma deposition area , a winding adjustment roller () , a drawing roller () , and a winding roller () which are arranged in sequence , and there are a top electrode () , an upper barrier dielectric plate () , a lower barrier dielectric plate () , and a bottom electrode () sequentially arranged in the said plasma deposition area from top to bottom , wherein the said upper barrier dielectric plate () is closely attached to the said top electrode () , and the said lower barrier dielectric plate () is closely attached to the said bottom electrode () , and there is discharge gap () left between the said upper barrier ...

Roll-To-Roll Atomic Layer Deposition Apparatus and Method

A method is provided. The method may include engaging a first edge region on a first surface of a substrate with a first support roller; engaging a second edge region on the first surface of the substrate with a second support roller; transporting the substrate over the first and the second support rollers; repeating the following sequence of steps to form a thin film on the substrate: (a) exposing the substrate to a first precursor; (b) supplying a reactive species to the substrate after exposing the substrate to the first precursor; and depositing a vapor on the thin film to form a coating on the thin film. 1. A method comprising:engaging a first edge region on a first surface of a substrate with a first support roller, wherein the first support roller is rotatable on a first end of a shaft, and wherein the substrate has a length substantially greater than a width thereof;engaging a second edge region on the first surface of the substrate with a second support roller, wherein the second support roller is rotatable on a second end of the shaft opposite the first end thereof, and wherein a central region between the first roller and the second roller and comprising at least about 50% of a width of the substrate is free of support from a roller;transporting the substrate over the first and the second support rollers; (a) exposing the substrate to a first precursor;', '(b) supplying a reactive species to the substrate to react with the first precursor after exposing the substrate to the first precursor; wherein the thin film is formed as a reaction product of the first precursor with the reactive species; and, 'repeating the following sequence of steps for a number of times sufficient to form a thin film on the substratedepositing a vapor on the thin film to form a coating on the thin film.2. The method of claim 1 , further comprising cooling the substrate before depositing the vapor on the thin film.3. The method of claim 1 , comprising heating the substrate before ...

High throughput vacuum deposition sources and system thereof

A high throughput deposition apparatus includes a vacuum chamber comprising a first processing chamber, a plurality of elongated deposition sources in parallel in the first processing chamber, wherein each of the elongated deposition sources can include a gas distribution channel that provides a deposition material in a gas form, and an electrode configured to generate a plasma in the deposition material, and a web transport mechanism configured to move a plurality of workpiece webs passing by the elongated deposition sources in the first processing chamber. The plurality of workpiece webs are parallel to each other and are configured to receive the deposition material in the first process chamber. 1. A high throughput deposition apparatus , comprising:a vacuum chamber comprising a first processing chamber;a plurality of elongated deposition sources in parallel in the first processing chamber, wherein each of the elongated deposition sources comprises a gas distribution channel configured to provide a deposition material in a gas form, and an electrode configured to generate a plasma in the deposition material; anda web transport mechanism configured to move a plurality of workpiece webs each passing by at least one of the plurality of elongated deposition sources in the first processing chamber, wherein the plurality of workpiece webs are parallel to each other and are configured to receive the deposition material in the first process chamber.2. The high throughput deposition apparatus of claim 1 , wherein the web transport mechanism comprises unwind reels and rollers configured to feed the plurality of workpiece webs claim 1 , and rewind reels and rollers configured to redirect the plurality of workpiece webs claim 1 ,the high throughput deposition apparatus further comprising:a first compartment configured to house the unwind reels and rollers; anda second compartment configured to house rewind reels and rollers.3. The high throughput deposition apparatus of ...

ATOMIC LAYER DEPOSITION SYSTEM

An atomic layer deposition system for depositing thin layers of material onto a common substrate includes a deposition head shaped to define a conical interior cavity into which a conical deposition drum is disposed. Together, the deposition head and the deposition drum define a narrow gap adapted to receive the common substrate, the spacing of the narrow gap being adjustable through acute axial displacement of the deposition head relative to the deposition drum. A pair of rollers advances the substrate through the gap in a first direction, as the deposition head rotates in the opposite direction at a precise rate. Each of the deposition head and deposition drum includes a plurality of separate fluid channels which enable gasses utilized in the deposition process to be delivered into and exhausted from the narrow gap, with the delivery of inert gas on both sides of the substrate effectively creating an air bearing. 1. A system for depositing atomic-level layers of material onto a common substrate , the system comprising:(a) a deposition drum having a longitudinal axis, the deposition drum adapted to rotate about the longitudinal axis; and(b) a deposition head shaped to define an interior cavity into which the deposition drum is positioned, the deposition head being spaced away from the deposition drum so as to define a narrow gap therebetween, the narrow gap being adapted to receive the common substrate;(c) wherein the narrow gap has a spacing which is adjustable.2. The system of wherein the deposition drum and the interior cavity of the deposition head have matching conical surfaces.3. The system of wherein the spacing of the narrow gap is adjustable through axial displacement of one of the deposition drum and the deposition head relative to the other of the deposition drum and the deposition head.4. The system of wherein the deposition head is axially displaced relative to the deposition drum to adjust the spacing of the narrow gap.5. The system of wherein the ...

COMMON DEPOSITION PLATFORM, PROCESSING STATION, AND METHOD OF OPERATION THEREOF

An apparatus includes a substrate support having an outer surface for guiding the substrate through a first vacuum processing region and at least one second vacuum processing region. First and second deposition sources correspond to the first processing region and at least one second deposition source corresponds to the at least one second vacuum processing region, wherein at least the first deposition source includes an electrode having a surface that opposes the substrate support. A processing gas inlet and a processing gas outlet are arranged at opposing sides of the surface of the electrode. At least one separation gas inlet how one or more openings, wherein the one or more openings are at least provided at one of opposing sides of the electrode surface such that the processing gas inlet and/or the processing gas outlet are provided between the one or more openings and the surface of the electrode. 1. An apparatus for depositing a thin film on a substrate , comprising:a substrate support having an outer surface for guiding the substrate along a surface of the substrate support through a first vacuum processing region and at least one second vacuum processing region; an electrode having a surface, wherein the surface of the electrode opposes the surface of the substrate support;', 'a processing gas inlet and a processing gas outlet, wherein the processing gas inlet and the processing gas outlet are arranged at opposing sides of the surface of the electrode; and', 'at least one separation gas inlet having one or more separation gas inlet openings, wherein the one or more separation gas inlet openings are at least provided at one of opposing sides of the surface of the electrode such that the processing gas inlet and/or the processing gas outlet are provided between the one or more separation gas inlet openings and the surface of the electrode;, 'a first deposition sources corresponding to the first processing region and at least one second deposition source ...

Laminated film and method for manufacturing laminated film

Provided are a highly flat laminated film having an optically functional layer such as a quantum dot layer, in which a member such as a quantum dot performing an optical function can be prevented from deteriorating due to the permeation of oxygen or the like from an end face, and a method for manufacturing a laminated film. The laminated film includes a functional layer laminate having an optically functional layer and a gas barrier layer laminated on at least one main surface of the optically functional layer and an end face sealing layer formed by covering at least a portion of the end face of the functional layer laminate, and the end face sealing layer has an oxygen permeability of equal to or lower than 10 cc/(m 2 ·day·atm).

Methods and Systems for Fabricating High Quality Superconducting Tapes

An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities. 1. A method for fabricating a superconductor film , the method comprising:heating a superconductor substrate tape through ohmic heating with a first roller and a second roller;delivering the heated superconductor substrate tape to a groove in a housing via the first roller and the second roller, wherein the groove is in fluid communication with a chamber positioned between two parallel channels, wherein the groove traverses the housing and is accessible at a first end and a second end of the housing, wherein the first roller is positioned exterior to the housing and guides the heated superconductor substrate tape to the groove at the first end of the housing, and wherein the second roller is positioned exterior to the housing and guides the heated superconductor substrate tape out of the second end of the housing via the groove; andflowing at least one superconductor precursor in a gas phase through the chamber.2. The method of claim 1 , wherein the heating of the superconductor substrate tape comprises pre-heating the superconductor substrate tape through ohmic heating via the first roller and the second roller.3. The method of claim 1 , wherein the heating of the superconductor substrate tape occurs at a temperature between approximately 700° C. and approximately 800° C.4. The method of claim 1 , further comprising measuring the temperature of the superconductor tape with one or more temperature monitoring devices positioned in ...

SURFACE ENGINEERED METAL SUBSTRATES AND RELATED METHODS

Disclosed herein are systems and methods for engineering a metal substrate surface via a dry chemical deposition technique. Also described herein are the resulting surface engineered metal substrates. More particularly, disclosed are surface engineered metal substrates having thin films deposited via flame pyrolysis of a mixture of a gas mixture comprising an oxidizer and a combustible gas, a chemical precursor comprising a silicon-containing compound and/or a phosphorus-containing compound, and a chemical additive. 1. A surface engineering system , comprising:a gas mixture comprising an oxidizer and a combustible gas;a chemical precursor comprising a silicon-containing compound, a phosphorus-containing compound, or a combination thereof; anda chemical additive,wherein the chemical precursor and the chemical additive are gaseous, are liquids that are vaporized or aerosolized, or are solids that are sublimed.2. The surface engineering system of claim 1 , wherein the combustible gas comprises natural gas claim 1 , methane claim 1 , propane claim 1 , butane claim 1 , or a combination thereof.3. The surface engineering system of claim 1 , wherein the oxidizer is air.4. The surface engineering system of claim 1 , wherein the oxidizer and the combustible gas are present in the gas mixture in a molar ratio of from 1:1 to 10:1.5. The surface engineering system of claim 1 , wherein the silicon-containing compound comprises hexamethyldisiloxane (HMDSO) claim 1 , tetramethylsilane (TMS) claim 1 , tetraethoxysilane (TEOS) claim 1 , triethoxysilane claim 1 , N-sec-butyl(trimethylsilyl)amine claim 1 , 1 claim 1 ,3-diethyl-1 claim 1 ,1 claim 1 ,3 claim 1 ,3 claim 1 ,tetramethyldisilazane claim 1 , methylsilane claim 1 , pentamethyldisilane claim 1 , tetraethylsilane claim 1 , tetramethyldisilane claim 1 , or a combination thereof.6. The surface engineering system of claim 1 , wherein the phosphorus-containing compound comprises vinylphosphonic acid claim 1 , trimethyl phosphate ...

Film-forming apparatus and film-forming method

There is provided a film-forming apparatus including a roll-to-roll mechanism and a heating unit. The roll-to-roll mechanism is configured to transport a film-forming target and includes a tensile force relaxation unit configured to relax a tensile force applied to the transported film-forming target. The heating unit is configured to heat the film-forming target transported by the roll-to-roll mechanism.

GRAPHENE SYNTHESIS CHAMBER AND METHOD OF SYNTHESIZING GRAPHENE BY USING THE SAME

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate. 1. A graphene synthesis method comprising:disposing a substrate including a metal thin film in an inner space of a graphene synthesis chamber;depressurizing the inner space;supplying a gas including carbon into the inner space using a gas supplier; andirradiating a light to the inner space to heat the substrate using a main heating unit,wherein a first auxiliary heating unit and a second auxiliary heating unit are disposed at both sides of the substrate, respectively, and spaced apart from each other so as to define an auxiliary space therebetween for synthesizing graphene on the substrate, andwherein the substrate is disposed in the auxiliary space, and spaced apart from the first auxiliary heating unit and the second auxiliary heating unit.2. The graphene synthesis method of claim 1 , wherein a temperature of the auxiliary space is about 1000° C. or higher during graphene synthesis.3. The graphene synthesis method of claim 1 , wherein a temperature of the auxiliary space is substantially constant during graphene synthesis.4. The graphene synthesis method of claim 1 , wherein the main heating unit comprises:a first main heating unit which faces a first surface of the substrate; anda second main heating unit which faces a second surface of the substrate.5. The graphene synthesis method of claim 4 ,wherein the first auxiliary heating unit is provided between the first main heating unit and the substrate, and the second auxiliary heating unit is provided between the second main heating unit and the substrate.6. The graphene ...

FORMING A SUBSTRATE WEB TRACK IN AN ATOMIC LAYER DEPOSITION REACTOR

An apparatus and method for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor by moving a first set of support rolls in relation to a second set of support rolls. 1. A method comprising:forming a substrate web track with a repeating pattern into a reaction vessel of an atomic layer deposition reactor by moving a first set of support rolls in relation to a second set of support rolls; andsupporting the substrate web by the first and second sets of support rolls when the track has been formed.2. The method of claim 1 , comprising moving the first set of support rolls from a first side of the second set of support rolls to the other side of the second set of support rolls.3. The method of claim 2 , comprising forming a track of a pleated form by pushing the substrate web by the first set of support rolls to the other side of the second set of the support rolls.4. The method of claim 1 , comprising forming inside the reaction vessel a three-dimensional atomic layer deposition flow volume defined by a reaction vessel lid claim 1 , reaction vessel sidewalls and the formed substrate web track.5. The method of claim 1 , comprising removing gases from the reaction space claim 1 , during deposition claim 1 , via a route travelling through the first set of support rolls.6. The method of claim 1 , wherein a substrate web source roll is integrated into a chamber lid of the deposition reactor.7. The method of claim 1 , wherein the substrate web is fed into a reaction chamber or reaction space through a reaction chamber lid.9. The deposition reactor of claim 8 , comprising a mechanism configured to move the first set of support rolls from a first side of the second set of support rolls to the other side of the second set of support rolls.10. The deposition reactor of claim 8 , wherein the first and second sets of support rolls are configured to form a track of a pleated form by pushing the substrate web by the first set of support ...

CONTINUOUS MULTIPLE TOW COATING REACTOR

A tow coating reactor system includes a reactor for receiving fiber tow, a wedge situated adjacent the reactor and configured to receive the tow at a tip end, such that as the tow moves across the wedge, the wedge spreads the tow into a plurality of sub-tows. 1. A tow coating reactor system comprising:a reactor for receiving fiber tow; anda wedge situated adjacent the reactor and configured to receive the tow at a tip end, such that as the tow moves across the wedge, the wedge spreads the tow into a plurality of sub-tows, wherein the wedge includes a plurality of longitudinal grooves, each of the plurality of longitudinal grooves configured to receive one of the plurality of sub-tows, and the wedge includes a plurality of fins within each of the plurality of longitudinal grooves.2. The tow-coating reactor system as recited in claim 1 , wherein the wedge includes a tapered portion including a tip in line with the fiber tow.3. The tow-coating reactor system as recited in claim 2 , wherein the wedge includes an untapered portion downstream of the tapered portion.4. The tow-coating reactor system as recited in claim 1 , wherein the wedge has a coating.5. The tow-coating reactor system as recited in claim 4 , wherein the coating is a diamond-like carbon coating.6. The tow-coating reactor system as recited in claim 1 , wherein the fiber tow has a tow center axis claim 1 , the wedge having a wedge center axis claim 1 , and the tow center axis and the wedge center axis are aligned.7. The tow-coating reactor system as recited in claim 1 , wherein the wedge includes a first half surface and a second half surface opposite the first half surface claim 1 , and the wedge is positioned such that one of the plurality of sub-tows runs across the first half surface claim 1 , and a second of the plurality of sub-tows runs across the second half surface.8. The tow-coating reactor system as recited in claim 1 , comprising a second wedge opposite the reactor from the first wedge.9. The ...

Transparent Sheet Materials

A transparent sheet material comprising an organic, polymeric substrate and inorganic layers on each side of the substrate, wherein the overall thickness of the inorganic layer(s) on each side of the substrate is less than 5nm 1. A transparent sheet material comprising an organic , polymeric substrate and inorganic layers on each side of the substrate , wherein the overall thickness of the inorganic layer(s) on each side of the substrate is less than 5 nm.2. The transparent sheet material according to wherein the inorganic layers have been applied to each side of the substrate by a method comprising plasma-enhanced chemical vapour deposition.3. The transparent sheet material according to which is flexible.4. The transparent sheet material according to or which is sufficiently flexible to be wound on and off a spool having a diameter of 1 cm.5. The transparent sheet material according to wherein the organic claim 1 , polymeric substrate comprises PEN or PET.6. The transparent sheet material according to which reduces in transparency by less than 5% when heated for 30 minutes at 150° C. claim 1 , as measured using light of wavelength 589 nm.7. The transparent sheet material according to wherein the inorganic layer comprises silicon.8. The transparent sheet material according to wherein the inorganic layer comprises the degradation product of hexamethyldisiloxane (HMDSO) claim 1 , tetramethyldisiloxane (TMDSO) claim 1 , 1 claim 1 ,1 claim 1 ,3 claim 1 ,3 claim 1 ,5a claim 1 , 5b-hexamethyltrisiloxane claim 1 , hexamethylcyclotetrasiloxane claim 1 , octamethylcyclotetrasiloxane claim 1 , decamethylcyclopentanesiloxane claim 1 , tetraethoxysilane (TEOS) claim 1 , tetramethoxysilane (TMOS) claim 1 , methyltrimethoxysilane claim 1 , methyltriethoxysilane claim 1 , dimethyldimethoxysilane claim 1 , dimethyldiethoxysilane claim 1 , trimethylethoxysilane claim 1 , ethyltrimethoxysilane claim 1 , ethyltriethoxysilane claim 1 , n-propyltrimethoxysilane claim 1 , n- ...

VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD FOR FLEXIBLE SUBSTRATE

The invention provides a vapor deposition apparatus and a vapor deposition method for flexible substrate, and pertains to the technical field of display, which can solve the problem that an existing method for subjecting a flexible substrate to vapor deposition is prone to damage a structure formed by vapor deposition already on a flexible substrate. The vapor deposition apparatus for flexible substrate comprises at least two reels used for winding and fixing a flexible substrate; and a wire source unit located at one side of the flexible substrate between the two reels and used for subjecting the flexible substrate between the two reels to vapor deposition. In this vapor deposition apparatus for flexible substrate, the flexible substrate is wound and fixed with the reels and does not need to be peeled off from a glass substrate after vapor deposition is complete, and thus the structure formed by vapor deposition on the flexible substrate will not be damaged. By means of the vapor deposition apparatus for flexible substrate, it is possible to achieve continuous operation and improve production efficiency. The vapor deposition apparatus for flexible substrate is suitable for vapor deposition of all types of flexible substrates. 1. A vapor deposition apparatus for flexible substrate , wherein the vapor deposition apparatus for flexible substrate comprises:at least two reels used for winding and fixing a flexible substrate; anda wire source unit located at one side of the flexible substrate between the two reels and used for subjecting the flexible substrate between the two reels to vapor deposition,and wherein a plurality of layers of the flexible substrate are wound on the reels, and gaps are provided between the layers of the flexible substrate.2. The vapor deposition apparatus for flexible substrate according to claim 1 , wherein the vapor deposition apparatus for flexible substrate further comprises a mask for defining a vapor deposition pattern on the flexible ...

Depositing Coatings On and Within A Housing, Apparatus, or Tool Using a Coating System Positioned Therein

A method of coating an interior surface of a housing defining a volume includes partitioning the volume into a first zone and a second zone, the first zone isolated from fluid communication with the second zone; introducing one or more reactant gases, plasma, ions, or a combination thereof to the first zone and the second zone; and forming one or more coating layers on all or a portion of the interior surface within the first and second zones via reaction of the reactant gases, the plasma, or the combination thereof. A device for coating an interior surface of a housing is also provided. 1. A method of coating an interior surface adjacent an interior volume of a housing , wherein the interior volume has an inlet , the method comprising: partitioning the interior volume of the housing into a first zone and a second zone , the first zone isolated from fluid communication with the second zone; introducing one or more reactant gases , plasma , or both to the first zone and the second zone; forming one or more coating layers on all or a portion of the surface adjacent the interior volume of the housing within the first zone and the surface adjacent the interior volume of the housing within the second zone via reaction of the reactant gases , optionally in the presence of the plasma; and optionally , evacuating an unreacted portion of the one or more reactant gases from the first zone , the second zone , or both.2. The method of claim 1 , wherein the reaction comprises a chemical vapor deposition (CVD) reaction claim 1 , an atomic layer deposition (ALD) reaction claim 1 , or both claim 1 , such that the one or more coating layers respectively comprise an ALD layer claim 1 , a CVD layer claim 1 , or both.3. The method of claim 2 , further comprising: (i) forming the ALD layer by: introducing a first reactant gas into a reaction zone selected from the first zone and the second zone claim 2 , such that at least a portion of the first reactant gas chemically bonds with the ...

HEAT TREATMENT APPARATUS FOR A VACUUM CHAMBER, DEPOSITION APPARATUS FOR DEPOSITING MATERIAL ON A FLEXIBLE SUBSTRATE, METHOD OF HEAT TREATMENT OF A FLEXIBLE SUBSTRATE IN A VACUUM CHAMBER, AND METHOD FOR PROCESSING A FLEXIBLE SUBSTRATE

The present disclosure provides a heat treatment apparatus () for use in a vacuum chamber (). The heat treatment apparatus () includes a transport arrangement configured to apply a tension to a flexible substrate () in a longitudinal direction, wherein the transport arrangement comprises a drum (), and a heating device configured to heat the drum () for heating the flexible substrate () to a first temperature of 120° C. to 180° C. 1. A heat treatment apparatus for use in a vacuum chamber , comprising:a transport arrangement configured to apply a tension to a flexible substrate in a longitudinal direction, wherein the transport arrangement comprises a drum; anda heating device configured to heat the drum for heating the flexible substrate to a first temperature of 120° C. to 180° C.2. The heat treatment apparatus of claim 1 , wherein the drum is rotatable in a first direction and a second direction opposite the first direction and configured to heat the flexible substrate to the first temperature during the rotation in the first direction.3. The heat treatment apparatus of claim 2 , wherein the drum is configured to heat the flexible substrate to a second temperature of 40° C. to 100° C. during the rotation in the second direction.4. The heat treatment apparatus of claim 1 , wherein the transport arrangement includes a first roller and a second roller claim 1 , and wherein the first roller claim 1 , the drum and the second roller are sequentially arranged along a transport path of the flexible substrate.5. The heat treatment apparatus of claim 4 , wherein the first roller is an unwinding roller and the second roller is a winding roller when the drum rotates in the first direction claim 4 , and wherein the first roller is a winding roller and the second roller is an unwinding roller when the drum rotates in the second direction.6. The heat treatment apparatus of claim 1 , wherein the transport arrangement is configured to apply a tension of 200 to 900N to the flexible ...

APPARATUS FOR VAPOR DEPOSITION OF DIELECTRIC WIRE COATING

Embodiments of the invention involve a technique and process for coating fine diameter, single strand wire of long continuous lengths with Parylene. The special fixture design and process allows for ultra thin (as thin as 0.2 micron), pore free, coatings. The advantages of this technology allow for wire products that offer minimal intrusion, superior routing and winding characteristics, and high heat and chemical resistance. The coating process can also be used for other types of material. 1. A system for suspending a length of wire substantially in free space , comprising:a bobbin having a plurality of notches through which the length of wire is coiled, wherein the length of wire is substantially longer than the bobbin diameter; andan actuator mechanically coupled to the bobbin and configured to vibrate the bobbin such that the length of wire is intermittently suspended in free space.2. The system of claim 1 , the free space being within a vacuum chamber.3. The system of claim 1 , wherein a depth and width of each notch is at least twice a diameter of the wire.4. The system of claim 1 , the bobbin comprising:a top plate having a first plurality of slots;a bottom plate having a second plurality of slots;a plurality of struts each having a first spigot formed at a first end and inserted into a different one of the slots in the top plate, and a second spigot formed at a second end and inserted into a corresponding different one of the plurality of slots in the bottom plate, wherein the struts each have the plurality of notches facing outwards and away from a center of the bobbin; anda controller configured to electrically drive the actuator to vibrate the bobbin,wherein the length of wire passes through the notches and is intermittently supported within the notches by the struts.5. The system of claim 4 , further comprising a plurality of rods configured to mechanically couple the top plate to the bottom plate and secure the struts.6. The system of claim 4 , further ...

METHOD FOR TREATING THE SURFACE OF A MOVING FILM, AND FACILITY FOR IMPLEMENTING SAID METHOD

A method carried out in a facility having an enclosure, a support for the substrate, a counter-electrode, a head provided with an electrode, a device for diffusing an inert gas and device for injecting an active gas mixture towards the support. The method involves continuously introducing bath the inert gas and the active gas mixture towards the support, continuously activating the reactive gas in the electrical discharge and treating the surface of the moving substrate, continuously discharging, via the outlet, the gaseous atmosphere from the inner volume comprising a fraction of the inert gas and the active gas mixture, adjusting the effective cross-section of the outlet and/or adjusting the total flow rate of the inert gas and the active gas mixture, such that the inner volume of each head is at a slight overpressure relative to the inner volume of the enclosure. 2. The method according to claim 1 , wherein the effective cross-section of the outlet is adjusted and/or the total flow rate of the inert gas and of the active gaseous mixture is adjusted claim 1 , in such a way that the difference in pressure between the inner volume of each head and the inner volume of the chamber is greater than 20 Pascal claim 1 , in particular greater than 50 Pascal.3. The method according to claim 1 , wherein the oxygen concentration in the inner volume of each head is measured and the effective cross-section of the outlet is adjusted and/or the total flow rate of the inert gas and of the active gaseous mixture is adjusted claim 1 , if this measured concentration is outside of a predetermined range.4. The method according to claim 1 , wherein the active gaseous mixture comprises claim 1 , besides the reactant gas claim 1 , a carrier gas.5. The method according to claim 4 , wherein an inert gas of a first type claim 4 , namely nitrogen claim 4 , and a carrier gas of a different type claim 4 , namely helium claim 4 , are used.6. The method according to claim 5 , wherein a carrier ...

DEPOSITION SYSTEM AND METHOD USING A DELIVERY HEAD SEPARATED FROM A SUBSTRATE BY GAS PRESSURE

A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed. 1. An atomic layer deposition system for depositing a thin film onto a substrate comprising:a delivery head having an output face with a means for providing a series of gas flows and a means for moving the substrate relative to the series of gas flows, wherein:at least a portion of the output face provides the series of gas flows in the order of a gas flow of a first reactant gas, a gas flow of a purge gas, a gas flow of a second reactant gas; wherein each of the gas flows flow from an associated output opening in the output face to one or more associated exhaust openings in the output face and is located between the output face and a surface of the substrate, and whereinthe distance between of the substrate and the output face is at least in part controlled by one or more of the gas flows during thin film deposition.2. The atomic layer deposition system of wherein the gas flows are parallel to the direction of the relative motion of the substrate.3. The atomic layer deposition system of wherein the output face has alternating output openings and exhaust openings.4. The atomic layer deposition system of wherein each of the gas flows shares an exhaust opening with an adjacent gas flow.5. The atomic layer ...

SHOWER HEAD AND ROLL-TO-ROLL PLASMA-PROCESSING APPARATUS INCLUDING THE SAME

Disclosed are a shower head capable of improving plasma uniformity and a roll-to-roll plasma-processing apparatus including the same. The shower head includes a body including a plurality of flow channels provided therein and a front surface having a concave shape, and a plurality of spray holes formed in the front surface and having the same diameter as one another. Each of the spray holes is connected to a corresponding one of the flow channels so that reaction gas supplied through the flow channels is sprayed from the front surface through the spray holes. 1. A shower head for a plasma processing apparatus , comprising:a body including a plurality of flow channels provided therein and a front surface having a concave shape; anda plurality of spray holes formed in the front surface and having a same diameter as one another,wherein each of the spray holes is connected to a corresponding one of the flow channels so that reaction gas supplied through the flow channels is sprayed from the front surface through the spray holes.2. The shower head according to claim 1 , wherein the spray holes are spaced apart from one another by an equal distance.3. The shower head according to claim 1 , wherein each of the spray holes has a same depth between the front surface and the respective corresponding one of the flow channels.4. The shower head according to claim 1 , wherein the flow channels have different lengths corresponding to a curvature of the front surface.5. The shower head according to claim 4 , wherein the lengths of the flow channels gradually increase from a middle region of the body to a top and a bottom of the body.6. The shower head according to claim 4 , wherein an uppermost flow channel and a lowermost flow channel have a same length.7. The shower head according to claim 1 , wherein the body further includes a cavity opposite to the front surface claim 1 , the cavity being in fluid communication with the plurality of flow channels.8. A roll-to-roll plasma- ...

ROLL TO ROLL FABRICATION APPARATUS FOR PREVENTING THERMAL IMPACT

A roll to roll fabrication apparatus includes: a vacuum chamber having an installation chamber and a process chamber; a preprocessing unit in the installation chamber to process a surface of a film which is transferred to enhance a film characteristic in a subsequent CVD process; a process drum in the process chamber to wind the film thereon; a process treatment unit in the process chamber to form a layer by performing a CVD process on the film wound on the process drum; and a plurality of heaters in the installation chamber and the process chamber to gradually increase a temperature of the film wound on the process drum to prevent application of a thermal impact to the film due to the high-temperature process drum. 1. A roll to roll fabrication apparatus , comprising:a vacuum chamber having an installation chamber and a process chamber;a preprocessing unit in the installation chamber to process a surface of a film which is transferred;a process drum in the process chamber to wind the film thereon;a process treatment unit in the process chamber to process the film wound on the process drum; anda plurality of heaters in at least one chamber of the installation chamber and the process chamber to gradually increase a temperature of the film wound on the process drum.2. The roll to roll fabrication apparatus of wherein the heater includes:at least one first heaters in the installation chamber; andat least one second heaters in the process chamber.3. The roll to roll fabrication apparatus of wherein the heaters include an infrared ray lamp.4. The roll to roll fabrication apparatus of claim 1 , further comprising a drum heater at the process drum.5. The roll to roll fabrication apparatus of wherein the process treatment unit is a CVD processor using plasma gas.6. The roll to roll fabrication apparatus of wherein the preprocessing unit processes a surface of a film by using plasma gas.7. The roll to roll fabrication apparatus of claim 6 , further comprising:a first vacuum ...

ROLL TO ROLL FABRICATING SYSTEM HAVING TURNING UNIT

In a roll to roll fabricating system, a plurality of deposition units are provided, and a turning unit is disposed between the deposition units. The deposition units include: a deposition drum on which a film is wound; and one or more evaporators disposed to face the deposition drum, and configured to deposit the film wound on the deposition drum. The turning unit includes a plurality of turning rolls, and is configured to turn the film output from one deposition unit, to guide the film, and to supply the film to another deposition unit. 1. A roll to roll fabricating system , comprising:a film supplying roll supplying a film;a film collecting roll collecting the film;a plurality of deposition units between the film supplying roll and the film collecting roll and forming a deposition material on the film; anda turning unit between the deposition units and turning a deposition surface of the film from the deposition units such that the deposition surface of the film is not contact with the rolls.2. The roll to roll fabricating system of claim 1 , wherein the deposition units comprise:a deposition drum winding the supplied film thereon;a plurality of mask driving rolls driving an open mask such that the open mask is arranged on the deposition surface of the film; andat least one evaporator facing the deposition drum depositing the deposition material on the film.3. The roll to roll fabricating system of claim 2 , wherein the deposition drum cools down the wound film.4. The roll to roll fabricating system of claim 3 , wherein the deposition drum comprises a cooler cooling down the film.5. The roll to roll fabricating system of claim 4 , wherein the cooler comprises a refrigerant.6. The roll to roll fabricating system of claim 2 , wherein the at least one evaporator comprises a hole injecting material evaporator claim 2 , a hole transporting material evaporator claim 2 , an organic light emitting material evaporator claim 2 , an electron transporting material evaporator ...

HIGH CONDUCTIVITY GRAPHENE-METAL COMPOSITE

Embodiments of the present technology include graphene-metal composites. An example graphene-metal composite comprises a porous metal foam substrate, a graphene layer deposited to the porous metal foam substrate, a metal layer applied to the graphene layer, and another graphene layer deposited to the metal layer; the multilayered porous metal foam substrate being compressed to form a graphene-metal composite. 1. A graphene-metal composite comprising:a porous metal foam substrate anda graphene layer deposited to the porous metal foam substrate, the porous metal foam substrate and graphene being compressed to form a graphene-metal composite.2. The graphene-metal composite according to claim 1 , wherein the porous metal foam substrate is nickel or copper foam.3. The graphene-metal composite according to claim 1 , wherein the porosity of the porous metal foam substrate is at least 70%.4. The graphene-metal composite according to claim 1 , wherein the graphene layer is deposited to the porous metal foam substrate by chemical vapor deposition.5. The graphene-metal composite according to claim 1 , wherein the porous metal foam substrate with graphene applied is compressed to substantially close the voids in the porous metal foam substrate and make the compressed porous metal foam substrate with graphene applied thinner than the thickness of the non-compressed porous metal foam substrate.6. A graphene-metal composite comprising:a porous metal foam substrate;a first graphene layer deposited to the porous metal foam substrate;a metal layer applied to the first graphene layer; anda second graphene layer deposited to the metal layer, at least some of the layers being compressed to form a graphene-metal composite.7. The graphene-metal composite according to claim 6 , wherein at least a second metal layer is applied to the second graphene layer and at least a third graphene layer is deposited to the second metal layer.8. The graphene-metal composite according to claim 6 , wherein ...

DEVICE FOR COATING A SUBSTRATE WITH A CARBON-CONTAINING COATING

In a device for depositing graphene, carbon nano-tubes or other, in particular carbon-contained coatings on a strip-shaped substrate, the substrate enters a reactor housing through an inlet opening and is transported in a transport direction through a process area that is tempered by a tempering device, before being exiting the reactor housing through an outlet opening. Heat-transport-inhibiting means are arranged between the process area and the inlet opening and/or the outlet opening by means of which a heat transport from the process area to the inlet opening or the outlet opening is reduced. Guide elements are also provided in order to guide the substrate into and out of regions directly adjacent to the inlet and outlet openings. 122. A device for depositing graphene , carbon nanotubes or other carbon-containing coatings , on a substrate () , wherein the substrate () is strip-shaped , the device comprising:{'b': 1', '12', '12', '5', '2', '1', '12', '1', '12', '2', '12', '12', '5, 'a reactor housing () with an inlet opening (), an outlet opening (′) and a processing zone () arranged in the reactor housing, wherein the substrate () enters the reactor housing () through the inlet opening () and exits the reactor housing () through the outlet opening (′), wherein said substrate () is transported in a transport direction from the inlet opening () to the outlet opening (′) through the processing zone ();'}{'b': 8', '2, 'at least one tempering device () for tempering the substrate (); and'}{'b': 14', '15', '16', '17', '5', '12', '5', '12', '5', '12', '12', '14', '15', '16', '17, 'heat transfer-inhibiting means (, , , ) arranged between the processing zone () and the inlet opening () and/or arranged between the processing zone () the outlet opening (′) so as to reduce a heat transfer from the processing zone () toward the inlet opening () and/or the outlet opening (′), wherein heat transfer-inhibiting means (, , , ) comprise flat bodies that extend transversely or ...

Method and apparatus for coating a surface of a substrate

The invention relates to a method and an apparatus for providing one or more coating layers on a surface of a substrate by successive surface reactions of at least a first and second precursor. The method includes supplying the first precursor from a first precursor nozzle and the second precursor from a second precursor nozzle to the surface of the substrate, and moving the substrate relative to at least one of the first and second precursor nozzle. The method further includes subjecting only one or more first limited sub-areas of the surface of the substrate to the first and second precursor by cooperation of supplying the first and second precursor and simultaneously moving the substrate relative to at least one of the first and second precursor nozzle.

APPARATUS FOR MANUFACTURING THIN FILM CLUSTER, THIN FILM CLUSTER, THIN FILM, UV-BLOCKING AGENT AND COSMETICS

The present invention provides a thin film cluster production system characterized by producing a thin film cluster in situ and achieving improved quality, high productivity, and significantly reduced initial investment costs, a thin film cluster production method, a thin film cluster, a thin film, a UV protector, and cosmetics. 1. An apparatus for manufacturing a thin film cluster including a stack of at least two thin film layers sandwiching a coated-material therebetween is provided , wherein the apparatus comprises:a vacuum vessel having a vacuum atmosphere space defined therein in which the thin film cluster is formed;vacuum pumping means to realize a vacuum state at least in the space; at least one coating source to coat a thin film of a predetermined substance on a predetermined surface in the vacuum vessel, wherein the thin film includes at least one layer;a supply unit to supply at least the coated-material to a predetermined location;a collection unit to collect at least the coated-material; anda coating zone in which the thin film is coated on a predetermined surface of the coated-material using the at least one coating source;wherein the coated-material is present in the supply unit and collection unit and coating zone at least for a predetermined period,wherein the coated-material is different at least between the supply unit and collection unit in terms of at least one of a thickness, a structure, a shape, a phase, and a movement form thereof,wherein the coated-material is guided to move from the supply unit at least to the collection unit,wherein in the coating zone, the thin film layer is at least partially coated on the coated-material surface,wherein after coating, the coated-material is collected into a predetermined location including at least the collection unit,wherein at least at a predetermined timing,the supply unit, coating zone, collection unit are arranged in this order such that the coated-material moves at least from the supply unit, to ...

SELENIZATION OR SULFURIZATION METHOD OF ROLL TO ROLL METAL SUBSTRATES

Methods and systems are disclosed for processing a precursor material. The method includes introducing a substrate having a precursor material deposited on a surface of the substrate into a first zone of a vacuum chamber. The precursor material comprises copper, indium, and at least one of gallium, selenium, sulfur, sodium, antimony, boron, aluminum, and silver. The method further includes, within the first zone, heating the precursor material to a target reaction temperature within a range of about 270° C. to about 490° C. The method further includes maintaining a selenium vapor in a second zone of the vacuum chamber, and after heating the precursor material to the target reaction temperature, introducing the precursor material and the substrate to the second zone of the vacuum chamber. 1. A method comprising:introducing a substrate having a precursor material deposited on a surface of the substrate into a first zone of a vacuum chamber, wherein the precursor material comprises copper, indium, at least one of selenium and sulfur, and optionally gallium, sodium, antimony, boron, aluminum, or silver;within the first zone, heating the precursor material to a target reaction temperature within a range of about 270° C. to about 490° C.;maintaining one of a selenium vapor or a sulfur vapor in a second zone of the vacuum chamber; andafter heating the precursor material to the target reaction temperature, introducing the precursor material and the substrate to the second zone of the vacuum chamber.2. The method of claim 1 , further comprising reacting the precursor material with the selenium vapor or the sulfur vapor in the second zone of the vacuum chamber.3. The method of claim 1 , wherein the target reaction temperature is within a range of about 360° C. to about 380° C.4. The method of claim 1 , wherein a temperature of the substrate is increased to at least about 520° C. within the second zone.5. The method of claim 1 , wherein the vacuum chamber is configured for ...

APCVD OF DOPED TITANIUM OXIDE AND THE COATED ARTICLE MADE THEREBY

A method of making a doped titanium oxide coating in a float glass manufacturing process and the coated glass article made thereby wherein the dopant is a niobium or tantalum compound. The doped titanium oxide coating preferably exhibits an electrical conductivity>1×10S/cm. 1. A method of making a doped conductive titanium oxide coating by atmospheric chemical vapor deposition during a float glass manufacturing process comprising:providing a heated glass ribbon in the float glass manufacturing process;providing a uniform precursor gas mixture comprising a halogenated, inorganic titanium compound, a halogenated, inorganic niobium or tantalum dopant compound, an organic oxygen-containing compound and one or more inert carrier gases, wherein the halogenated, inorganic niobium or tantalum dopant compound comprises no more than 0.3 mol % of the precursor gas mixture;delivering the precursor gas mixture at a temperature below the thermal decomposition temperature of the precursor gas mixture to a location adjacent the heated glass ribbon to be coated, a float bath atmosphere surrounding the heated glass ribbon being at essentially atmospheric pressure; and{'sup': '−3', 'bringing the precursor gas mixture into coating contact with the heated glass ribbon, the temperature of the heated glass ribbon being sufficient to cause reaction of the precursor gas mixture so as to deposit a doped titanium oxide coating at a deposition rate greater than 35 Å/sec. on the glass ribbon, the doped titanium oxide coating exhibiting an electrical conductivity of greater than 1×10S/cm.'}2. The method defined in claim 1 , wherein the glass ribbon is at a temperature of 1050° F. (566° C.)-1350° F. (732° C.).3. The method defined in claim 1 , wherein the halogenated inorganic titanium compound comprises TiCl.4. The method defined in claim 1 , wherein the halogenated inorganic dopant compound comprises one chosen from the group consisting of: NbF claim 1 , NbCl claim 1 , TaF claim 1 , and TaCl.5. ...

Barrier film or sheet and laminated packaging material comprising the film or sheet and packaging container made therefrom

Barrier films comprising a PECVD barrier coating with diamond-like carbon are disclosed, along with methods of manufacturing such films, and laminated packaging materials comprising such films, in particular intended for liquid food packaging are disclosed. Packaging containers comprising the laminated packaging material or being made from the laminated packaging material, in particular to a packaging container intended for liquid food packaging are also disclosed.

VAPOR DEPOSITION APPARATUS HAVING PRETREATMENT DEVICE THAT USES PLASMA

A roller-type continuous vapor deposition film-forming apparatus for a substrate that is to be conveyed at high speed, comprising a plasma pretreatment device and a film-forming apparatus provided in series, wherein a substrate conveying compartment A, a pretreatment compartment B and film formation compartment C are formed inside a chamber ; and a substrate S is wound from an unwinding roller onto a plasma pretreatment roller and film formation roller , which are provided in series, via guide rollers -, and is taken up by a take-up roller . In the pretreatment device, plasma P is supplied toward the substrate S inside a gap, wherein a plasma-forming gas to be supplied from plasma supply nozzles is surrounded by the pretreatment roller, the plasma supply nozzles and a magnet , as magnetic forming means, and the plasma is electrically set to a positive electrical potential, power is supplied between the electrodes positioned on the substrate surface side, the plasma P is generated and an active pretreatment surface is formed on the surface of the substrate S. An inorganic oxide can be formed at high speed by the film formation device by physical vapor deposition or the like on a pretreatment surface of a substrate that has been subjected to the pretreatment. 220. The method according to claim 1 , wherein the plasma pretreatment unit is constructed and arranged to supply the plasma (P) near the outer periphery of the pretreatment roller () to a plasma density of 100 to 8000 W·sec/m2.3. The method according to claim 1 , wherein the vapor deposited film is formed by physical vapor deposition unit selected from the group consisting of sputtering claim 1 , ion plating claim 1 , ion beam assist and cluster ion beam methods.4. The method according to claim 2 , wherein the vapor deposited film is formed by physical vapor deposition unit selected from the group consisting of sputtering claim 2 , ion plating claim 2 , ion beam assist and cluster ion beam methods. The present ...

THIN METAL COATING METHODS FOR HIGH CONDUCTIVITY GRAPHANE-METAL COMPOSITES AND METHODS OF MANUFACTURE

Embodiments of the present technology include graphene-metal composites. An example graphene-metal composite includes a porous metal foam substrate, a graphene layer deposited to the porous metal foam substrate, a metal layer applied to the graphene layer, and another graphene layer deposited to the metal layer; the multilayered porous metal foam substrate being compressed to form a graphene-metal composite, and depositing a thin metal coating on an outer surface of the porous metal foam substrate or an outer surface of the graphene using any of physical vapor deposition and chemical vapor deposition. 1. A graphene-metal composite comprising:a porous metal foam substrate, and a graphene layer deposited to the porous metal foam substrate, the porous metal foam substrate and graphene being compressed to form a graphene-metal composite.2. The graphene-metal composite according to claim 1 , wherein the porous metal foam substrate is nickel or copper foam.3. The graphene-metal composite according to claim 1 , wherein the porosity of the porous metal foam substrate is at least 70%.4. The graphene-metal composite according to claim 1 , wherein the graphene layer is deposited to the porous metal foam substrate by chemical vapor deposition.5. The graphene-metal composite according to claim 1 , wherein the porous metal foam substrate with graphene applied is compressed to substantially close the voids in the porous metal foam substrate and make the compressed porous metal foam substrate with graphene applied thinner than the thickness of the non-compressed porous metal foam substrate. This application is a divisional and claims the priority of U.S. patent application Ser. No. 15/017,578, filed on 21 May 2016, entitled “HIGH CONDUCTIVITY GRAPHANE-METAL COMPOSITE AND METHODS OF MANUFACTURE,” which is a continuation-in-part, and claims the priority benefit, of U.S. patent application Ser. No. 14/947,951 filed on Nov. 20, 2015, entitled “High Conductivity Graphene-Metal Composite ...

VACUUM PROCESSING SYSTEM AND METHODS THEREFOR

A vacuum processing system for a flexible substrate is provided. The vacuum processing system includes a first chamber adapted for housing a supply roll for providing the flexible substrate; a second chamber adapted for housing a take-up roll for storing the flexible substrate after processing; a substrate transport arrangement including one or more guide rollers for guiding the flexible substrate from the first chamber to the second chamber; a maintenance zone between the first chamber and the second chamber wherein the maintenance zone allows for maintenance access to or of at least one of the first chamber and the second chamber; and a first process chamber for processing the flexible substrate. 1. A vacuum processing system for a flexible substrate , the vacuum processing system comprising:a first chamber adapted for housing a supply roll for providing the flexible substrate;a second chamber adapted for housing a take-up roll for storing the flexible substrate after processing;a substrate transport arrangement including one or more guide rollers for guiding the flexible substrate from the first chamber to the second chamber;a maintenance zone between the first chamber and the second chamber wherein the maintenance zone allows for maintenance access to or of at least one of the first chamber and the second chamber; anda first process chamber for processing the flexible substrate.2. The vacuum processing system according to claim 1 , further comprising a passageway connecting the first process chamber to the second chamber or to a second process chamber claim 1 , wherein the passageway is provided above or below the maintenance zone.3. The vacuum processing system according to claim 2 , wherein the second process chamber is located so that the second chamber is provided between the maintenance zone and the second process chamber.4. The vacuum processing system according to or claim 2 , wherein at least one of the first process chamber and the second process ...

Vacuum-coating system, and method for coating a strip-type material

A method and a vacuum-coating system () for coating a strip-shaped material (), in particular made of metal, are disclosed. Thereby, the strip-shaped material () is moved over a conveying section () in a transport direction (T) and vacuum-coated within a coating chamber () in which a vacuum is applied. When viewed in the transport direction (T) of the strip-shaped material (), at least one trimming shear () is arranged upstream of the coating chamber (), with which the strip-shaped material () is trimmed at at least one strip edge, preferably at both strip edges, in order to produce a constant width for the strip-shaped material () over its longitudinal extension. 16-. (canceled)7. A vacuum-coating system for coating a strip-shaped metal material , comprising:a conveying section with transport rollers, on which the strip-shaped metal material is movable in a transport direction, the transport rollers being configured to convey the strip-shaped metal material with a width of the strip being horizontally arranged; anda coating chamber in which a vacuum can be generated, the coating chamber having an inlet area and an outlet area through which the strip-shaped metal material passes in the transport direction,wherein a trimming shear is arranged upstream of the coating chamber, with which trimming shear the strip-shaped metal material is trimmed at at least one strip edge,wherein the trimming shear is configured to produce a constant width of the strip-shaped metal material over its longitudinal extension, andwherein a strip position control device is arranged upstream of the trimming shear, with which the strip-shaped metal material can be aligned with respect to a center of the conveying section.8. The vacuum-coating system according to claim 7 ,further comprising a position sensor with which a position of the strip-shaped metal material on the conveying section can be determined in an area upstream of the coating chamber.9. The vacuum-coating system according to ...

CONVEYOR DEVICE FOR A SUBSTRATE

A device for transporting a strip-type substrate through a reactor includes transport elements for holding the substrate. The transport elements are displaceable by a drive unit in a transport direction. The transport elements have first transport beams and second transport beams that engage in alternation on the substrate, in which the transport beams that engage the substrate move in the transport direction and the transport beams that do not engage the substrate move in a reverse direction opposite to the transport direction. The device further includes transport carriages that are arranged in pairs in the transport direction respectively upstream and downstream of the reactor. 1120. A device for transporting a strip-shaped substrate () through a reactor () , the device comprising:{'b': 15', '15', '1, 'a horizontal drive (, ′) for displacing the substrate () in a transport direction (V);'}{'b': 3', '3', '4', '4', '5', '5', '6', '6', '1, 'transport elements (, ′, , ′, , ′, , ′) for holding the substrate (),'}{'b': 3', '3', '4', '4', '5', '5', '6', '6', '1, 'wherein the transport elements comprise first transport beams (, ′, , ′) and second transport beams (, ′, , ′) that alternately engage the substrate (),'}{'b': '1', 'wherein when the first transport beams engage the substrate () and move in the transport direction (V), the second transport beams are configured to not engage the substrate and move in a reverse direction (R) opposite to the transport direction (V), and'}{'b': 3', '3', '4', '4', '5', '5', '6', '6', '9', '9', '10', '10', '11', '11', '12', '12', '2', '2', '1, 'wherein the first transport beams and second transport beams (, ′, , ′, , ′, , ′) feature clamping surfaces (, ′, , ′, , ′, , ′) for clamping an edge (, ′) of the substrate () between two of the clamping surfaces.'}2131420131420. The device of claim 1 , further comprising a first pair of transport carriages ( claim 1 , ) arranged upstream of the reactor () and a second pair of transport ...

FILM FORMATION APPARATUS AND FILM FORMATION METHOD

A film formation apparatus and a film formation method that can homogenize the distribution of gas in each zone in a chamber and improve film formation precision are provided. A film formation apparatus according to one embodiment includes: a chamber which includes a plurality of zones into which gas is introduced, and a plurality of discharge ports that discharge the gas located in at least any of the zones and that can individually adjust an opening state; and a transportation unit that transports a substrate so as to pass through the plurality of the zones in the chamber. 1. A film formation apparatus , comprising:a chamber that includes a plurality of zones into which gas is introduced, and a plurality of discharge ports that discharge the gas located in at least any of the zones and that can individually adjust to an opening state; anda transportation unit that transports a substrate so as to pass through the plurality of zones in the chamber.2. The film formation apparatus of :wherein the substrate is a flexible sheet,wherein the chamber includes two or more zones which can have their pressure reduced and into which different gases are respectively introduced,further comprising an atomic layer deposition film formed by depositing an atomic layer on a surface of the substrate while the substrate reciprocates among the plurality of zones so as to alternately pass through the plurality of zones multiple times, andthe discharge ports are each located at positions on a path that the substrate passes through or positions between the adjacent paths.3. The film formation apparatus of claim 1 , wherein the number of the discharge ports corresponds to the number of times that the substrate passes through the zones.4. The film formation apparatus of claim 1 , wherein the plurality of supply ports that supplies the gas into the zones are disposed at positions opposed to the discharge ports with the substrate interposed therebetween.5. The film formation apparatus of : ...

Methods and Systems for Fabricating High Quality Superconducting Tapes

An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities. 1. A method of fabricating a superconductor tape by metal organic chemical vapor deposition using a precursor to film conversion efficiency greater than approximately 20% of theoretical value.2. The method of claim 1 , wherein the superconductor tape is a REBCO film.3. The method of claim 2 , wherein the REBCO film comprises the formula REBaCuO.4. The method of claim 1 , wherein the superconductor tape is substantially uniform.5. The method of claim 1 , wherein the superconductor tape comprises no observable misoriented grain growth.6. The method of claim 1 , wherein the precursor to film conversion efficiency is a result of a conversion of precursor to film performed within a gap in a range from less than 1 mm to approximately ¼ inch.7. The method of claim 6 , wherein the gap is formed between two parallel channels.8. The method of claim 1 , wherein the superconductor tape comprises a film thickness greater than approximately 2 μm and a critical current density greater than approximately 4 MA/cmat 77 K in a zero applied magnetic field.9. The method of claim 8 , wherein the superconductor tape further comprises non c-axis grain orientation less than approximately 10%.10. A method of fabricating a superconductor tape by metal organic chemical vapor deposition claim 8 , wherein the superconductor tape comprises a film thickness greater than approximately 2 μm and a critical current density greater than approximately 4 MA/cmat 77 K in a zero ...

Continuous single crystal growth of graphene

Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.

Thin film deposition preparation device and method

The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.

PROCESS FOR FORMING COMPOSITIONALLY-GRADED THIN FILMS

A compositionally-graded thin film is formed on a substrate by atomic layer deposition. A mixing system provides a homogeneous gaseous mixture having a controllable ratio of first and second reactive gaseous species. The first and second reactive gaseous species each react with a third reactive gaseous species but do not react with each other. A deposition unit includes first and second reactive gas zones. The homogeneous gaseous mixture is provided to the first reactive gas zone, and the third reactive gaseous species is provided to the second reactive gas zone. The mixing system is controlled to change the ratio of the first and second reactive gaseous species as a function of time as the substrate is moved relative to the deposition unit such that the deposited material has a variable composition as a function of height above the substrate. 1. A process of making a compositionally-graded thin film comprising:providing a substrate having a substrate surface;providing a spatial atomic layer deposition system having a deposition unit, wherein the deposition unit includes a first reactive gas zone and a second reactive gas zone;providing a mixing system to mix a controllable ratio of a first reactive gaseous species and a second reactive gaseous species to provide a first reactive gaseous material;supplying the first reactive gaseous material to the first reactive gas zone of the deposition unit;supplying a second reactive gaseous material including a third reactive gaseous species to the second reactive gas zone of the deposition unit;wherein the first reactive gaseous species and the second reactive gaseous species are each capable of reacting with the second reactive gaseous material but do not react with each other under a specified set of operating conditions;causing a relative motion between the deposition unit and the substrate according to a specified motion profile to cause the substrate surface to be sequentially exposed to the first and second reactive ...

METHOD AND APPARATUS FOR COATING SUBSTRATE

A method and apparatus for subjecting a surface of a substrate to successive surface reactions of precursors according to the principles of atomic layer deposition. The method including subjecting the surface of the substrate to the first precursor in a first precursor zone and subjecting the surface of the substrate to the second precursor in a second precursor zone. The method further includes changing the first precursor in the first precursor zone to a subsequent precursor which is different than the first and second precursors and subjecting the surface of the substrate to the subsequent precursor in the first precursor zone and subjecting the surface of the substrate to the second precursor in the second precursor zone. 125.-. (canceled)26. A method for subjecting a surface of a substrate to successive surface reactions of at least a first precursor , a second precursor and a first subsequent precursor according to the principles of atomic layer deposition for forming on the surface of the substrate a coating comprising two or more different coating layers , the method being carried out with a nozzle head comprising one or more first precursor nozzles for forming a first precursor zone and one or more second precursor nozzles for forming a second precursor zone , wherein the method comprises:a primary deposition step comprising subjecting the surface of the substrate to the first precursor in the first precursor zone and subjecting the surface of the substrate to the second precursor in the second precursor zone for forming a first coating layer on the surface of the substrate;a first changing step comprising changing the first precursor in the first precursor zone to a first subsequent precursor which is different than the first and second precursors;an alternate deposition step comprising subjecting the surface of the substrate to the first subsequent precursor in the first precursor zone and subjecting the surface of the substrate to the second precursor in ...

Drum for Roll-To-Roll Deposition, Roll-To-Roll Deposition Apparatus and Film Roll

Disclosed herein is a drum for roll-to-roll deposition to rotate about a longitudinal axis. The drum is circular in a widthwise cross-section and has a shape in which opposite longitudinal edge portions each have a narrower width than a longitudinal central portion. By using the drum for roll-to-roll deposition according to embodiments of the present disclosure, it is possible to remove wrinkles occurring on a flexible substrate when a roll-to-roll deposition process is performed. As a result, it is possible to manufacture a film roll having a deposition layer with excellent widthwise thickness uniformity. 1. A drum for roll-to-roll deposition to rotate about a longitudinal axis , the drum being circular in a width cross-section and having a shape in which opposite longitudinal edge portions each have a smaller width than a longitudinally central portion.2. The drum of claim 1 , wherein a width of the drum gradually decreases toward the opposite longitudinal edge portions from the longitudinal central portion.3. The drum of claim 1 , wherein widths of the opposite longitudinal edge portions are each 90% or more of a width of the longitudinal central portion.4. The drum of claim 1 , wherein a heating element is disposed on a surface of or inside of the drum for roll-to-roll deposition.5. A roll-to-roll deposition apparatus claim 1 , comprising:an extracting roller to continuously supply a flexible substrate;a drum to be in contact with a lower surface of the flexible substrate supplied from the extracting roller and rotate about a longitudinal axis of the drum, the drum being circular in a widthwise cross-section and having a shape in which opposite longitudinal edge portions each have a smaller width than a longitudinal central portion;a gas supply having a surface that faces the drum, the gas supply to supply process gas to an upper surface of the flexible substrate; anda winding roller to wind the flexible substrate transferred from the drum.6. The roll-to-roll ...

Solar Cell With Selectively Doped Conductive Oxide Layer and Method of Making the Same

A method of making a coated substrate having a transparent conductive oxide layer with a dopant selectively distributed in the layer includes selectively supplying an oxide precursor material and a dopant precursor material to each coating cell of a multi-cell chemical vapor deposition coater, wherein the amount of dopant material supplied is selected to vary the dopant content versus coating depth in the resultant coating.

Continuous reel-to-reel arrangement

A continuous reel-to-reel arrangement ( 1 ), for transportation of continuous substrate materials ( 3 ) from an unwinding material reel ( 2 ) to a winding material reel ( 4 ), comprises at least two guiding rolls ( 5 ) arranged to align the substrate material ( 3 ) when being rolled off from the unwinding material reel ( 2 ) before entering into at least one treatment zone ( 6 ), and at least two guiding rolls ( 5 ) arranged to align the substrate material ( 3 ) when exiting the at least one treatment zone ( 6 ) before being winded up on the winding material reel ( 4 ). At least one of the guiding rolls ( 5 ) arranged to align the substrate material ( 3 ) when exiting the at least one treatment zone is a driving roll ( 13 ), and at least one of the guiding rolls ( 5 ) arranged to align the substrate material ( 3 ) when being rolled off from the unwinding material reel ( 2 ) is a braking roll ( 12 ), arranged to apply a constant braking force to the substrate material ( 3 ) when the substrate material ( 3 ) is driven through the at least one treatment zone ( 6 ). Thereby, the risk of plastically deforming the substrate material ( 3 ) is low during transportation and during unwinding/winding and the risk of subjecting the material to wear is also low.

DEVICE FOR THE TREATMENT OF A WEB SUBSTRATE IN A PLASMA ENHANCED PROCESS

A device for treating a web substrate in a plasma enhanced process. The device includes a treatment station with a vacuum process chamber. A plasma treatment unit is allocated to the treatment station which is designed to form a plasma zone within the process chamber for treating a surface of the web substrate. The device further includes a transporting system for continuously transporting the web substrate through the treatment station with an unwind roller and a rewind roller, wherein the transporting system defines a transporting path of the web substrate through the process chamber. The plasma treatment unit includes an extensive antenna and a radiofrequency generator for exciting the extensive antenna to a resonant frequencies. 1. A device for continuously treating a web substrate in a plasma enhanced process , the device comprising:at least one treatment station including a process chamber, wherein at least one plasma treatment unit is allocated to the at least one treatment station which is designed to form a plasma zone within the process chamber for treating a surface of the web substratea transporting system configured to continuously transport the web substrate through the at least one treatment station, with an unwind roller and a rewind roller, wherein the transporting system defines a transporting path of the web substrate through the process chamber,wherein the at least one plasma treatment unit comprises at least one extensive antenna and at least one radiofrequency generator configured to excite said at least one extensive antenna to at least one of its resonant frequencies,wherein the at least one extensive antenna comprises a plurality of interconnected elementary resonant meshes, each of the resonant meshes comprising at least two conductive legs and at least two capacitors,and wherein the transporting system in the process chamber defines a treatment path section for the web substrate, wherein the treatment path section for the web substrate ...

Functional film amd method for producing functional film

A functional film has an organic layer and an inorganic layer which are alternately formed on a support and a protective material which is stuck to a rear surface of the support through an adhesive layer and has thermal characteristics different from thermal characteristics of the support, in which an adhesive force between the adhesive layer and the support is 0.01 N/25 mm to 0.15 N/25 mm, and an adhesive force between the adhesive layer and the protective material is 5 N/25 mm to 50 N/25 mm. In a state where a long laminate composed of the support, the adhesive layer, and the protective material is being transported in a longitudinal direction, the organic layer and the inorganic layer are alternately formed on the surface of the support. As a result, a low-cost functional film, in which the inorganic layer or the like is not damaged and which stably demonstrates the intended performance, is obtained.

Laminate film, organic electroluminescence device, photoelectric conversion device, and liquid crystal display

Provided is a laminate film having a substrate and at least one thin film layer which is formed on at least one surface of the substrate, wherein at least one of the thin film layers satisfies all of the following conditions (i) to (iv): (i) silicon atoms, oxygen atoms, and carbon atoms are contained, (ii) a content ratio X (at %) of the number of carbon atoms relative to a sum of the number of silicon atoms, the number of oxygen atoms, and the number of carbon atoms is 3 to 25 at %, (iii) an average density d (g/cm 3 ) is 2.12 g/cm 3 or higher and is less than 2.25 g/cm 3 , and (iv) the content ratio X (at %) of the number of carbon atoms and the average density d (g/cm 3 ) satisfy a condition represented by the following formula (1): d >(2.22−0.008 X )  (1).

HEAT TREATMENT APPARATUS FOR HIGH-QUALITY GRAPHENE SYNTHESIS

The present invention relates to a heat treatment apparatus for high-quality graphene synthesis, and more particularly, to a heat treatment apparatus for high-quality graphene synthesis capable of more effectively depositing graphene on a catalytic metal film. 1. A heat treatment apparatus for high-quality graphene synthesis comprising:{'b': '20', 'an upper roll chamber, a deposition chamber connected to the upper roll chamber to deposit graphene on a catalytic metal film, and a lower roll chamber mounted on a lower portion of the deposition chamber,'}wherein the upper roll chamber includes a supply roller supplying the catalytic metal film and a winding roller winding the catalytic metal film deposited with the graphene,the lower roll chamber includes a lower direction shifting roller shifting a direction of the catalytic metal film which is supplied from the supply roller, deposited with the graphene in the deposition chamber, and wound on the winding roller, andin the deposition chamber, a catalytic metal film at a supply side transferred from the supply roller to the lower direction shifting roller and a catalytic metal film at a discharge side transferred from the lower direction shifting roller to the winding roller are passed, and a heater portion is mounted around the catalytic metal film at the supply side and the catalytic metal film at the discharge side.2. The heat treatment apparatus for high-quality graphene synthesis of claim 1 , wherein the upper roll chamber includes an upper roll chamber body claim 1 , a supply roller provided inside the upper roll chamber to be driven by a motor claim 1 , a first direction shifting roller provided at one side of the supply roller to shift the direction of the catalytic metal film supplied from the supply roller downward claim 1 , an intermediate roller rotating in contact with the first direction shifting roller at one side of the first direction shifting roller claim 1 , applying friction force so that the ...