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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 11145. Отображено 100.
29-03-2012 дата публикации

Supporting substrate, bonded substrate, method for manufacturing supporting substrate, and method for manufacturing bonded substrate

Номер: US20120074404A1
Автор: Kazuhiro Ushita
Принадлежит: Bridgestone Corp

Provided is a supporting substrate ( 30 ) to be bonded on a single crystalline wafer composed of a single crystalline body. The supporting substrate is provided with a silicon carbide polycrystalline substrate ( 10 ) composed of a silicon carbide polycrystalline body, and a coat layer ( 20 ) deposited on the silicon carbide polycrystalline substrate ( 10 ). The coat layer ( 20 ) is composed of silicon carbide or silicon and is in contact with the single crystalline wafer, and the arithmetic average roughness of the contact surface ( 22 ) of the coat layer ( 20 ) in contact with the single crystalline wafer is 1 nm or less.

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05-04-2012 дата публикации

Suppression Of Crystal Growth Instabilities During Production Of Rare-Earth Oxyorthosilicate Crystals

Номер: US20120080645A1
Принадлежит: Siemens Medical Solutions USA Inc

Disclosed are a method of growing a rare-earth oxyorthosilicate crystal and a crystal grown using the method. A melt is prepared by melting a first substance including at least one rare-earth element and a second substance including at least one element from group 7 of the periodic table. A seed crystal is brought into contact with the surface of the melt and withdrawn to grow the crystal.

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10-05-2012 дата публикации

Method to Manufacture Large Uniform Ingots of Silicon Carbide by Sublimation/Condensation Processes

Номер: US20120114545A1
Принадлежит: Dow Corning Corp

This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

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17-05-2012 дата публикации

Method of production of sic single crystal

Номер: US20120118221A1
Принадлежит: Toyota Motor Corp

The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

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24-05-2012 дата публикации

Crystal Growth Atmosphere For Oxyorthosilicate Materials Production

Номер: US20120126171A1
Принадлежит: Siemens Medical Solutions USA Inc

A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.

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05-07-2012 дата публикации

Halogen assisted physical vapor transport method for silicon carbide growth

Номер: US20120167825A1
Принадлежит: Individual

A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.

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20-09-2012 дата публикации

Production method, production vessel and member for nitride crystal

Номер: US20120237431A1

To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm.

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15-11-2012 дата публикации

Sublimation growth of sic single crystals

Номер: US20120285370A1
Принадлежит: II VI Inc

In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.

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22-11-2012 дата публикации

Silicon carbide powder and method for producing silicon carbide powder

Номер: US20120295112A1
Принадлежит: Sumitomo Electric Industries Ltd

There are provided a silicon carbide powder for silicon carbide crystal growth and a method for producing the silicon carbide powder. The silicon carbide powder is formed by heating a mixture of a silicon small piece and a carbon powder and thereafter pulverizing the mixture, and is substantially composed of silicon carbide.

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21-02-2013 дата публикации

Method of production of sic single crystal

Номер: US20130042802A1
Принадлежит: Toyota Motor Corp

The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated.

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14-03-2013 дата публикации

Oriented Perovskite Oxide Thin Film

Номер: US20130065065A1

A thin film which comprises an organic metal salt or an an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(B n−1 M n O 3n+1 ) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.

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18-04-2013 дата публикации

SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

Номер: US20130095294A1
Принадлежит: Sumitomo Electric Industries, Ltd.

A silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 10° C./cm or less. 1. A method of manufacturing a silicon carbide ingot , comprising the steps of:preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide; andgrowing a silicon carbide layer on a surface of said base substrate,in said step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of said silicon carbide layer being set to 10° C./cm or less.2. The method of manufacturing a silicon carbide ingot according to claim 1 , whereina surface of said silicon carbide layer located opposite to a side where the base substrate is located includes a (0001) facet plane, andsaid (0001) facet plane includes a central portion of said surface of the silicon carbide layer.3. The method of manufacturing a silicon carbide ingot according to claim 2 , whereina portion located under a region having said (0001) facet plane in said silicon carbide layer after the step of growing a silicon carbide layer is a high-nitrogen-concentration region higher in nitrogen concentration than a portion other than said portion located under the region having said (0001) facet plane in said silicon carbide layer.4. The method of manufacturing a silicon carbide ingot according to claim 3 , further ...

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30-05-2013 дата публикации

PIEZOELECTRIC THIN FILM, METHOD FOR MANUFACTURING SAME, INKJET HEAD, METHOD FOR FORMING IMAGE USING INKJET HEAD, ANGULAR VELOCITY SENSOR, METHOD FOR MEASURING ANGULAR VELOCITY USING ANGULAR VELOCITY SENSOR, PIEZOELECTRIC POWER GENERATION ELEMENT, AND METHOD FOR GENERATING POWER USING PIEZOELECTRIC POWER GENERATION ELEMENT

Номер: US20130136951A1
Принадлежит: Panasonic Corporation

Provided is a piezoelectric thin film including a non-lead-containing (that is, lead-free) ferroelectric material and having high piezoelectric performance comparable to that of PZT, and a method of manufacturing the piezoelectric thin film. The piezoelectric film according to the present invention comprises a laminate structure. The laminate structure comprises an electric film and a (1-x)(Na,Bi)TiO-xBaTiOfilm. x represents a value of not less than 0.03 and not more than 0.15. The (1-x)(Na,Bi)TiO-xBaTiOfilm has a (110) surface orientation only. The (1-x)(Na,Bi)TiO-xBaTiOfilm has an orthorhombic crystal structure only. 1. A piezoelectric film comprising a laminate structure , wherein{'sub': 3', '3, 'the laminate structure comprises an electric film and a (1-x)(Na,Bi)TiO-xBaTiOfilm;'}x represents a value of not less than 0.03 and not more than 0.15;{'sub': 3', '3, 'the (1-x)(Na,Bi)TiO-xBaTiOfilm has a (110) surface orientation only; and'}{'sub': 3', '3, 'the (1-x)(Na,Bi)TiO-xBaTiOfilm has an orthorhombic crystal structure only.'}2. The piezoelectric film according to claim 1 , wherein{'sub': 3', '3, 'the (1-x)(Na,Bi)TiO-xBaTiOfilm contains manganese.'}3. An ink jet head comprising:a piezoelectric thin film having a piezoelectric layer sandwiched between a first electrode and a second electrode;a vibration layer bonded to the piezoelectric thin film; anda pressure chamber member having a pressure chamber for storing ink and bonded to a surface of the vibration layer opposite to a surface to which the piezoelectric thin film is bonded,wherein the vibration layer is bonded to the piezoelectric thin film so that the vibration layer is displaceable in its film thickness direction according to a deformation of the piezoelectric thin film produced by a piezoelectric effect,the vibration layer and the pressure chamber member are bonded to each other so that a volumetric capacity of the pressure chamber changes according to a displacement of the vibration layer and so that ...

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13-06-2013 дата публикации

OXIDE SUBSTRATE AND MANUFACTURING METHOD THEREFOR

Номер: US20130149528A1
Автор: Ogimoto Yasushi
Принадлежит: FUJI ELECTRIC CO., LTD.

Some aspects of the invention provide an oxide substrate having a flat surface at the atomic layer level, and suited to forming a thin film of a perovskite manganese oxide. One aspect of the invention provides a single-crystal oxide substrate having a single-crystal supporting substrate of (210)-oriented SrTiOand a single-crystal underlayer of (LaAlO)—(SrAlTaO), which is LSAT, formed on the (210) plane surface of the supporting substrate. In another aspect of the present invention, the LSAT underlayer A is formed in an amorphous state. Other aspects of the invention are also disclosed. 1. An oxide substrate comprising:{'sub': '3', 'a single-crystal supporting substrate of (210)-oriented SrTiO; and'}{'sub': 3', '0.3', '0.5', '0.5', '3', '0.7, 'sup': 'O', 'an underlayer of (LaAlO)—(SrAlTa), which is LSAT, formed on the (210) plane surface of the supporting substrate.'}2. The oxide substrate according to claim 3 , wherein the thickness of the LSAT underlayer is 3×d(210) or more given d(210) as the lattice spacing of the LSAT (210) plane.3. The oxide substrate according to claim 1 , wherein the LSAT underlayer is formed in a crystal state.4. The oxide substrate according to claim 1 , wherein the LSAT underlayer is formed in an amorphous state.5. A method for manufacturing an oxide substrate claim 1 , comprising:{'sub': '3', 'a step of preparing a single-crystal supporting substrate of (210)-oriented SrTiO; and'}{'sub': 3', '0.3', '0.5', '0.5', '3', '0.7, 'a step of forming an underlayer of (LaAlO)—(SrAlTaO), which is LSAT, on the (210) plane surface of the supporting substrate.'}6. The method for manufacturing an oxide substrate according to claim 5 , wherein the thickness of the LSAT underlayer is 3×d(210) or more given d(210) as the spacing of atomic layers of the LSAT (210) plane.7. The method for manufacturing an oxide substrate according to claim 5 , wherein the step of forming the LSAT underlayer is performed at a supporting substrate temperature at which the LSAT ...

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20-06-2013 дата публикации

METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

Номер: US20130153836A1
Автор: Miyamoto Taro
Принадлежит: BRIDGESTONE CORPORATION

In a powder fabrication step (S) in this method for producing a silicon carbide singe crystal, a metal material containing at least one of vanadium, niobium, and tungsten is mixed into silicon carbide powder as transition metal atoms for the silicon carbide powder, which is the source or silicon carbide, to produce a sublimation starting material (). In a purification process step (S), the sublimation starting material () is disposed in a purified graphite crucible (), and a sublimation/growth step (S) is carried out. When a growth height for this single crystal such that the donor concentration and acceptor concentration are equal in the single crystal of silicon carbide obtained by growth of sublimated raw material on a seed crystal in the sublimation/growth step (S) is achieved, nitrogen gas is introduced at 0.5-100 ppm of an inert atmospheric gas. 1. A method of producing a silicon carbide single crystal employing a production apparatus having a graphite member formed of graphite , disposing a raw material including a silicon carbide in the graphite member , and heating and sublimating the raw material and growing a single crystal of the silicon carbide on a seed crystal in an atmospheric gas , the method comprising:the step of fabricating the raw material by mixing a metal material including a transient metal atom with a silicon carbide source including the silicon carbide;the step of purification treatment to retain the graphite member under a temperature condition of 2,000 degrees C. or more, in an inert gas atmosphere of 100 Pa to 100 kPa; andthe step of disposing the raw material in the graphite member subsequent to the step of purification treatment, and heating and sublimating the raw material and growing a silicon carbide single crystal on the seed crystal.2. The method of producing a silicon carbide single crystal according to claim 1 , whereinthe silicon carbide source is a silicon carbide polycrystalline substance produced by means of a chemical vapor ...

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20-06-2013 дата публикации

Method for controlled growth of silicon carbide and structures produced by same

Номер: US20130153928A1
Принадлежит: Cree Inc

A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.

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20-06-2013 дата публикации

Method for manufacturing a silicon carbide wafer and respective equipment

Номер: US20130157448A1
Принадлежит: STMICROELECTRONICS SRL

An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

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27-06-2013 дата публикации

Low 1c screw dislocation 3 inch silicon carbide wafer

Номер: US20130161651A1
Принадлежит: Cree Inc

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm −2 to about 2000 cm −2 .

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22-08-2013 дата публикации

Method for Manufacturing Optical Element

Номер: US20130214325A1
Принадлежит: Tokuyama Corp

A method for manufacturing an optical element includes a step wherein an aluminum nitride single crystal layer is formed on an aluminum nitride seed substrate having an aluminum nitride single crystal surface as the topmost surface. A laminated body for an optical element is manufactured by forming an optical element layer on the aluminum nitride single crystal layer, and the aluminum nitride seed substrate is removed from the laminated body. An optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance and a low dislocation density is provided.

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29-08-2013 дата публикации

BISMUTH-SUBSTITUTED RARE-EARTH IRON GARNET CRYSTAL FILM AND OPTICAL ISOLATOR

Номер: US20130224500A1
Принадлежит: SUMITOMO METAL MINING CO., LTD.

[Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator. 1. A bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd(ScGa)O , wherein{'sub': 3-x-y', 'x', 'y', '5', '12, 'the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of LaGdBiFeO(provided that 0 Подробнее

29-08-2013 дата публикации

BISMUTH-SUBSTITUTED RARE-EARTH IRON GARNET CRYSTAL FILM AND OPTICAL ISOLATOR

Номер: US20130224520A1
Принадлежит: SUMITOMO METAL MINING CO., LTD.

[Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator. 1. A bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd(ScGa)O , wherein{'sub': 3-x-y', 'x', 'y', '5', '12, 'the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of NdGdBiFeO, and'}x and y in the chemical formula satisfy 0.89≦x≦1.43 and 0.85≦y≦1.19.2. An optical isolator comprising the bismuth-substituted rare-earth iron garnet crystal film according to used as a Faraday rotator. The present invention relates to an optical isolator used as a countermeasure against optical feedback in a high-power laser device for processing. In particular, the present invention relates to improvements in an optical isolator and in a bismuth-substituted rare-earth iron garnet used as a Faraday rotator.In lasers such as semiconductor lasers used for optical communications and solid lasers used for laser processing etc., the laser oscillation is destabilized if light reflected by an optical surface or a work surface located outside a laser resonator returns to a laser element. The destabilized oscillation results in noise in a signal in the case of optical communications, or may result in destruction of the laser element in the case of a laser for processing. For this reason, an optical isolator is used for blocking such reflected optical feedback to prevent the reflected optical feedback from returning to the laser element.In the meantime, fiber lasers have recently attracted attention as an alternative to the YAG laser (a laser for processing). Conventionally, a terbium gallium garnet crystal (hereinafter, referred to as a TGG) or a terbium aluminum garnet crystal (hereinafter, referred to as a TAG) has been used as a ...

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19-09-2013 дата публикации

Fabrication method and fabrication apparatus of group iii nitride crystal substance

Номер: US20130244406A1
Принадлежит: Sumitomo Electric Industries Ltd

A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

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26-09-2013 дата публикации

Film-forming apparatus for the formation of silicon carbide and film-forming method for the formation of silicon carbide

Номер: US20130247816A1
Принадлежит: Denso Corp, Nuflare Technology Inc

A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit.

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03-10-2013 дата публикации

System and process for high-density, low-energy plasma enhanced vapor phase epitaxy

Номер: US20130260537A1
Автор: Hans Von Känel
Принадлежит: Sulzer Metco AG

A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10̂-3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder. In an eighth step, vapor particles and gas particles are allowed to react, so as to form a uniform epitaxial layer on the heated substrate by low-energy plasma-enhanced vapor phase epitaxy.

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10-10-2013 дата публикации

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON

Номер: US20130263774A1
Принадлежит: TOYO TANSO CO., LTD.

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph. 1. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide , the seed material being used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph , wherein upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm , a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.2. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak is observed at a lower wavenumber than that of the TO peak.3. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak has a peak intensity 0.3 or greater times the peak intensity of the TO peak.4. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the absolute amount of shift of the LO peak from 972 cmis 4 cmor more.5. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 4 , wherein the amount of shift of the LO peak from 972 cmis 4 cmor more.6. The seed material for liquid phase epitaxial growth of a ...

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17-10-2013 дата публикации

FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE

Номер: US20130269596A1
Принадлежит: TOYO TANSO CO., LTD.

Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph. 1. A feed material for epitaxial growth of a monocrystalline silicon carbide , the feed material being used in a method for epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph ,wherein upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.2. The feed material for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein a first-order diffraction peak corresponding to the (111) crystal plane is a main diffraction peak having the highest diffraction intensity among first-order diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.3. The feed material for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the diffraction peak other than the diffraction peak corresponding to the (111) crystal plane includes at least one diffraction peak claim 1 , each corresponding to one of a (200) crystal plane claim 1 , a (220) crystal plane claim 1 , and a (311) crystal plane.4. The feed ...

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17-10-2013 дата публикации

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE

Номер: US20130269597A1
Принадлежит: TOYO TANSO CO., LTD.

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed. 1. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide , the seed material being used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph ,wherein upon X-ray diffraction of the surface layer, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.2. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , whereinupon X-ray diffraction of the surface layer at least one first-order diffraction peak is observed, each first-order diffraction peak corresponding to one of a (111) crystal plane, a (200) crystal plane, a (220) crystal plane, and a (311) crystal plane, andthe average crystallite diameter calculated from the at least one first-order diffraction peak is more than 700 A.3. The seed material for ...

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24-10-2013 дата публикации

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

Номер: US20130280466A1
Принадлежит: II VI Inc

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

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21-11-2013 дата публикации

Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing

Номер: US20130305983A1
Принадлежит: SiCrystal AG

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

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21-11-2013 дата публикации

System and Method for Monolithic Crystal Growth

Номер: US20130309472A1
Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

A monolithic crystal having the atomic formula W n X m Y p Z r , with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.

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21-11-2013 дата публикации

"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"

Номер: US20130309496A1
Принадлежит: II-VI Incorporated

In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location inside of the graphite crucible. Thereafter, the mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. Next, the mixture and the bulk carbon are heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material. 1. A method of forming polycrystalline SiC material comprising the steps of:(a) positioning bulk carbon at a first location inside of a graphite crucible, wherein the bulk carbon is gas-permeable and vapor-permeable;(b) positioning a mixture comprised of elemental silicon (Si) and elemental carbon (C) at a second location inside of the graphite crucible;(c) following steps (a) and (b), removing adsorbed gas, or moisture, or volatiles or some combination of adsorbed gas, moisture and volatiles from the mixture and the bulk carbon positioned inside of the graphite crucible by heating the mixture and the bulk carbon positioned inside of the enclosed crucible to a first temperature which is below the melting point of the elemental Si;(d) following step (c), forming as-synthesized silicon carbide (SiC) inside of the crucible by heating the mixture positioned inside of the enclosed crucible to a second temperature sufficient to initiate a reaction between the elemental Si and the elemental C of the mixture that forms the as-synthesized SiC inside of the crucible ...

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28-11-2013 дата публикации

Crystal growth system and method for lead-contained compositions using batch auto-feeding

Номер: US20130312657A1
Автор: Jian Tian, Pengdi Han
Принадлежит: H C Materials Corp

This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

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05-12-2013 дата публикации

Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof

Номер: US20130320275A1
Принадлежит:

In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component. 1. A crystal growth method comprising:(a) providing a SiC single crystal seed and a polycrystalline SiC source material in spaced relation inside of a growth crucible that is disposed inside of a furnace chamber, the growth crucible disposed inside of a furnace chamber defining a growth ambient; and(b) sublimation growing a SiC single crystal on the SiC seed crystal via precipitation of sublimated SiC source material on the SiC seed crystal in the presence of a reactive atmosphere in the growth ambient that removes donor and/or acceptor background impurities from the growth ambient.2. The method of claim 1 , wherein the reactive atmosphere includes a halide vapor compound and one or more gases.3. The method of claim 2 , wherein:the halide vapor compound is comprised of (1) fluorine or chlorine, and (2) tantalum or niobium; andthe one or more gases includes argon, hydrogen, or a mixture of argon+hydrogen.4. The method of claim 2 , further including:(c) following step (b), changing the atmosphere in the growth ambient to a non-reactive atmosphere; and(d) following step (c), introducing ...

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12-12-2013 дата публикации

Method for producing silicon carbide crystal

Номер: US20130327265A1
Принадлежит: Sumitomo Electric Industries Ltd

There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a silicon carbide powder precursor by heating the mixture to not less than 2000° C. and not more than 2500° C.; preparing silicon carbide powders by pulverizing the silicon carbide powder precursor; and growing a silicon carbide crystal on a seed crystal using the silicon carbide powders in accordance with a sublimation-recrystallization method, 50% or more of the silicon carbide powders used in the step of growing the silicon carbide crystal having a polytype of 6H.

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19-12-2013 дата публикации

CRYSTALLINE SUBSTANCE, SUBSTRATE, AND METHOD FOR PRODUCING CRYSTALLINE SUBSTANCE

Номер: US20130337228A1
Автор: Ogimoto Yasushi
Принадлежит: FUJI ELECTRIC CO., LTD.

The present invention provides a crystalline substance that has an uneven structure extending along the direction of a crystal axis. An aspect of the present invention provides a crystalline substance , which has a surface L that exposes an oxide crystal thereon and extends in a direction of a crystal axis of the oxide crystal, wherein the surface L has an uneven structure that is configured by faces L to L extending in at least three orientations along the crystal axis. 1. A crystalline substance , comprising:a surface that exposes an oxide crystal thereon and extends in a direction of a crystal axis of the oxide crystal,wherein the surface has an uneven structure that is configured by faces extending in at least three orientations along the crystal axis,the oxide crystal has a crystal structure of a perovskite structure,the crystal axis is a [0001] axis of the oxide crystal, andthe uneven structure expands so as to be substantially parallel to a (210)-plane of the oxide crystal.2. (canceled)3. The crystalline substance according to claim 1 , wherein{'sub': '3', 'the oxide crystal is strontium titanate (SrTiO), and'}the uneven structure is formed by performing an annealing process on the surface at an end-point temperature of 1100° C. or higher.46-. (canceled)7. A method for producing a crystalline substance that has an uneven structure on a surface thereof claim 1 , the method comprising:preparing a crystalline substance that has a surface exposing an oxide crystal thereon and extending in a direction of a crystal axis of the oxide crystal; andforming an uneven structure that is configured by faces extending in at least three orientations along the direction of the crystal axis, by annealing the surface,{'sub': '3', 'wherein the oxide crystal is 210-plane oriented strontium titanate (SrTiO), and'}the formation of the uneven structure comprises annealing the surface at an end-point temperature of 1100° C. or higher.8. (canceled) The present invention relates to a ...

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26-12-2013 дата публикации

Single Crystals with Internal Doping with Laser Ions Prepared by a Hydrothermal Method

Номер: US20130343715A1
Принадлежит:

Single heterogeneous crystals are described that contain multiple regimes, adjacent regimes varying from one another with regard to function. Also disclosed is a hydrothermal epitaxial growth process that can be utilized to form the single heterogeneous crystals. The single heterogeneous crystals can exhibit enhanced performance when used as a laser gain medium as compared to previously known single crystals and multi-crystal constructs. The heterogeneous single crystal can be utilized for thin disk lasers and can minimize the thermal distortion effects at high powers. The heterogeneous crystal can also serve as an embedded waveguide. 1. A heterogeneous monolithic thin disk laser single crystal comprising:a first layer, the first layer comprising a host material, the host material being undoped in the first layer;a second layer, the second layer comprising the host material and a lasing ion dopant; anda third layer, the third layer comprising the host material, the host material being undoped in the third layer, the second layer being between the first layer and the third layer;wherein, the heterogeneous monolithic thin disk laser crystal has a face having a diameter of about 1 centimeter or larger, and the second layer has a thickness of between about 30 micrometers and about 150 micrometers.2. The heterogeneous monolithic thin disk single crystal of claim 1 , further comprising a fourth layer that is immediately adjacent to the second layer claim 1 , the fourth layer comprising the host material and the lasing ion dopant claim 1 , wherein the concentration of the lasing ion dopant in the fourth layer differs from the concentration of the lasing ion dopant in the second layer.3. The heterogeneous monolithic thin disk single crystal of claim 1 , wherein the second layer comprises the lasing ion dopant in a concentration gradient across the thickness of the second layer.4. The heterogeneous monolithic thin disk single crystal of claim 1 , wherein the refractive index ...

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26-12-2013 дата публикации

Hydrothermal Growth of Heterogeneous Single Crystals Exhibiting Amplified Spontaneous Emission Suppression

Номер: US20130344277A1
Принадлежит:

Single crystals are described that contain several regimes within the crystal that perform different functions related to the enhanced performance of a laser gain medium. At least one regime of the single crystals can be utilized to suppress amplified spontaneous emission and parasitic oscillation in a laser gain medium. A single crystal can include core and cladding regions, the cladding region providing amplified spontaneous emission suppression. The core region of the crystal can include as dopant one or more ions that take part in the lasing when suitably pumped. The amplified spontaneous emission suppression region can include as dopant one or more ions that can prevent additional spontaneous emission that can to depletion of the upper laser states, thus reducing laser performance including one or more ions that absorb spontaneously emitted photons and/or a higher concentration of the active lasing ions of the core. 1. A method for forming a monolithic heterogeneous single crystal comprising heating and pressurizing an aqueous solution held within a reactor to develop a temperature differential between a first zone of the reactor and a second zone of the reactor , the reactor containing a feedstock in the first zone and a seed crystal in the second zone , the seed crystal including a host material and an active lasing ion dopant , the feedstock including a source for forming the same host material as the host material of the seed crystal , the feedstock including a source for an amplified spontaneous emission suppression ion , wherein upon said heating and pressurizing growth of an amplified spontaneous emission suppression region is initiated on the seed crystal to form the monolithic heterogeneous single crystal including a first region and a second region , the first region corresponding to the seed crystal and the second region corresponding to the amplified spontaneous emission suppression region.2. The method of claim 1 , the aqueous solution comprising a ...

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02-01-2014 дата публикации

Silicon carbide crystal and method of manufacturing silicon carbide crystal

Номер: US20140004303A1
Автор: Makoto Sasaki
Принадлежит: Sumitomo Electric Industries Ltd

An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

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23-01-2014 дата публикации

BI-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL, METHOD FOR PRODUCING SAME, AND OPTICAL DEVICE

Номер: US20140021418A1
Принадлежит:

A Bi-substituted rare earth iron garnet single crystal has a composition of R3-xBixFe5-wAwO12 (wherein R denotes one or more rare earth elements among Tb, Y, Eu, Gd, Ho, Yb, Lu, Nd, Tm, La, Sm, Dy, Er, Ce, and Pr and inevitably include Tb; A denotes one or more elements among Ga, Al, In, Sc, Co, Ni, Cr, V, Ti, Si, Ge, Mg, Zn, Nb, Ta, Sn, Zr, Hf, Pt, Rh, Te, Os, Ce, and Lu, 0.7 Подробнее

30-01-2014 дата публикации

Semiconductor laminate and process for production thereof, and semiconductor element

Номер: US20140027770A1
Принадлежит: Koha Co Ltd, Tamura Corp

A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. include a semiconductor laminate including a Ga 2 0 3 substrate; an AlGalnN buffer layer which is formed on the Ga 2 0 3 substrate; a nitride semiconductor layer which is formed on the AlGalnN buffer layer and contains Si; and an Si-rich region which is formed in an area located on the AlGalnN buffer layer side in the nitride semiconductor layer and has an Si concentration of 5×10 18 /cm 3 or more.

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13-02-2014 дата публикации

Synthesis, capping and dispersion of nanocrystals

Номер: US20140045323A1
Принадлежит: Individual

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

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20-02-2014 дата публикации

Superhard carbon nitride and method for producing the same

Номер: US20140050650A1
Автор: Akitaka SAWAMURA
Принадлежит: Sumitomo Electric Industries Ltd

C 3 N 4 of the present invention has a Mn 3 O 4 type crystal structure to thereby have a bulk modulus higher than that of diamond.

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03-04-2014 дата публикации

SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE

Номер: US20140091325A1
Принадлежит:

When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S(=S×100/S) of an area (S) of a Si-plane side facet region to a total area (S) of the growth plane is maintained at 20% or less. 1. A method for producing an SiC single crystal , having the following constitution:(a) the method for producing an SiC single crystal repeats an a-plane growth step n (n≧2) times;(b) a first a-plane growth step is a step for carrying out the a-plane growth of an SiC single crystal on a first growth plane by using a first seed crystal having the first growth plane with an offset angle from the {0001} plane of 80° to 100°;(c) a k-th a-plane growth step (2≦k≦n) is a step for cutting out a k-th seed crystal having a k-th growth plane with a growth direction 45° to 135° different from the growth direction of a (k−1)-th a-plane growth step and an offset angle from the {0001} plane of 80° to 100° from a (k−1)-th grown crystal obtained in the (k−1)-th a-plane growth step, and carrying out the a-plane growth of an SiC single crystal on the k-th growth plane; and{'sub': 'facet', 'claim-text': {'br': None, 'i': S', 'S', '/S, 'sub': facet', '1', '2, '(%)=×100\u2003\u2003(A)'}, '(d) the k-th a-plane growth step (1≦k≦n) is a step for carrying out the a-plane growth of an SiC single crystal on the k-th growth plane so that an area ratio Sof a Si-plane side facet region represented by the equation (A) is maintained at 20% or less{'sub': 1', '2, 'where Sis the sum of the total area of areas obtained by projecting polar plane steps of Si-plane side on the k-th growth plane and the total area of areas obtained by projecting {1-100} plane facets sandwiched between the polar plane steps of Si-plane side on the k-th growth plane, and Sis the total area of the k-th growth plane.'}2. The method for producing an SiC single crystal according to claim 1 ,{'sub': '1', 'wherein the ...

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07-01-2016 дата публикации

CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL

Номер: US20160002820A1
Принадлежит:

A crucible has a bottom and a cylindrical side surface. In the crucible, a source material is sublimated to grow a single crystal. The crucible includes a third region configured to receive a source material, a second region extending from the third region in a direction away from the bottom, and a first region extending from the second region in a direction away from the bottom. The crucible includes a first wall and a second wall inside the side surface. The first wall surrounds the first region, the second wall surrounds the second region. The crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface. The distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom. 1. A crucible for sublimating a source material to grow a single crystal , comprising:a bottom; anda cylindrical side surface,wherein the crucible includes a third region configured to receive the source materiala second region extending from the third region in a direction away from the bottom, anda first region extending from the second region in a direction away from the bottom,the crucible includes a first wall and a second wall inside the side surface, the first wall surrounding the first region, the second wall surrounding the second region,the crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface,a distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom, and a distance between horizontal opposite portions on the second wall increases as the horizontal opposite portions approach the bottom,an inclination angle α of the first wall with respect to a direction perpendicular to the bottom is smaller than an inclination angle β of the second wall with ...

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04-01-2018 дата публикации

FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS

Номер: US20180002828A1
Автор: Loboda Mark
Принадлежит:

An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0. 1. An induction furnace apparatus for growing semiconductor crystals by seeded sublimation growth , comprising:a quartz vacuum chamber;a cylindrical RF induction coil positioned coaxially with the quartz vacuum chamber;an RF power supply coupled to the RF induction coil;a reaction cell configured for containing a seed crystal and source material, the reaction cell defining an axial length measured as the reaction cell height along its axis of rotational symmetry;an arrangement of insulation layers around the cell configured for generating a thermal gradient inside the reaction cell;a support for placing the reaction cell inside the quartz vacuum chamber;wherein the RF induction coil is configured for generating a uniform electromagnetic field around the reaction cell when the reaction cell is positioned co-axially with the induction coil, coaxially to the quartz vacuum chamber, and near or at the center of the coil with respect to its axial length; and,wherein a ratio of height of the RE induction coil, measured along the axis of rotational symmetry, to the axial length of the reaction cell is from 2.5 to 4.0.2. (canceled)3. The apparatus of ...

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04-01-2018 дата публикации

Device and Method for Producing Silicon Carbide

Номер: US20180002829A1
Принадлежит:

The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fibre. 1. Device for continuously producing crystalline silicon carbide , comprising:a reactor; anda collection container at least partially spatially separated from the reactor, whereinthe reactor comprises a supply means for supplying a precursor mixture,a substrate for depositing crystalline silicon carbide is provided,{'sub': 1', '2', '1, 'a reaction chamber of the reactor can be tempered to a first temperature Tand the substrate can be tempered to a second temperature Twhich is different from the first temperature T, wherein the reactor can be heated to a temperature in a range of ≧1400° C. to ≦2000° C., and wherein the temperature of the substrate can be reduced by a temperature in a range of ≧50° C. to ≦100° C. compared to the temperature basically set in the reactor within the aforementioned range of ≧1400° C. to ≦2000° C., wherein'}the substrate for the deposition of crystalline silicon carbide can be disposed at a deposition position within or adjacent to the reaction chamber and at least area-wise be moved from the deposition position to the collection container, and whereina scraper is arranged such that after or during an at least area-wise movement of the substrate to the collection container crystalline silicon carbide deposited on the substrate can be removed by the scraper from the substrate and the removed crystalline silicon carbide can be transferred into the collection container.2. Device according to claim 1 , wherein the substrate is configured as a rotatable disc.3. Device according to claim 1 , wherein the scraper is disposed adjacent to a fall in opening of the collection container such that the crystalline silicon carbide removed from the substrate falls into the collection container.4. Device according to claim 1 , wherein the reactor and the collection container are constructed ...

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07-01-2021 дата публикации

System For Efficient Manufacturing Of A Plurality Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

Номер: US20210002785A1
Принадлежит: SiCrystal GmbH

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

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07-01-2021 дата публикации

System For Horizontal Growth Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

Номер: US20210002787A1
Принадлежит: SiCrystal GmbH

A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value. 1. A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) , the system comprising:a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside, the reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.2. The system of claim 1 , wherein the angle from horizontal is between −15° and +15 with respect to a horizontal plane perpendicular to the direction of gravity claim 1 , and/or the reactor is horizontally oriented with respect to the gravity direction to accommodate the PVT growth structure.3. The system of claim 1 , wherein the PVT growth structure includes a source material compartment containing a source material and a pair of growth compartments each on a side of the source material compartment claim 1 , a crystal seed is disposed in each growth compartment and is at a certain distance along a longitudinal axis from the source material for growing respective single crystals from the source material claim 1 , the source material is selected for growing single crystals of a semiconductor material from a group including at least silicium carbide claim 1 , 4H-SiC ...

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03-01-2019 дата публикации

METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE

Номер: US20190003046A1
Принадлежит: SHOWA DENKO K.K.

A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C. 1. A method of cleaning a SiC monocrystal growth furnace by using a gas to clean a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C—SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis , the method comprising:flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through an inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, whereinthe mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is at least 200° C. but not more than 500° C.2. The method of cleaning a SiC monocrystal growth furnace according to claim 1 , wherein the inert gas is selected from the group consisting of nitrogen gas claim 1 , argon gas and helium gas.3. The method of cleaning a SiC monocrystal growth furnace according to claim ...

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03-01-2019 дата публикации

Single-Crystal Perovskite Solid Solutions With Indifferent Points for Epitaxial Growth of Single Crystals

Номер: US20190003077A1
Автор: Fratello Vincent
Принадлежит:

Growth of single crystal epitaxial films of the perovskite crystal structure by liquid- or vapor-phase means can be accomplished by providing single-crystal perovskite substrate materials of improved lattice parameter match in the lattice parameter range of interest. Current substrates do not provide as good a lattice match, have inferior properties, or are of limited size and availability because cost of materials and difficulty of growth. This problem is solved by the single-crystal perovskite solid solutions described herein grown from mixtures with an indifferent melting point that occurs at a congruently melting composition at a temperature minimum in the melting curve in the pseudo-binary molar phase diagram. Accordingly, single-crystal perovskite solid solutions, structures, and devices including single-crystal perovskite solid solutions, and methods of making single-crystal perovskite solid solutions are described herein. 1. A single-crystal perovskite comprising a solid solution between two perovskite compounds having an indifferent melting point that occurs at a temperature minimum in a melting curve in a pseudo-binary phase diagram , and excluding:{'sub': 3', '3, 'a solid solution of barium titanate-calcium titanate with an approximate molar chemical formula xBaTiO-(1−x)CaTiO, wherein x is in a range between 0 and 1;'}{'sub': 3', '0.5', '0.5', '3, 'a solid solution of lanthanum aluminate-strontium aluminum tantalate with an approximate molar chemical formula xLaAlO-(1−x)SrAlTaO, wherein x is in a range between 0 and 1; and'}{'sub': 3', '3, 'a solid solution of barium titanate-sodium niobate with an approximate molar chemical formula xBaTiO-(1−x)NaNbO, wherein x is in a range between 0.45 and 0.65 and a perovskite tolerance factor, T, is in a range between 1.009 and 1.028.'}2. The single-crystal perovskite of claim 1 , wherein the single-crystal perovskite has a cubic crystal structure at about 273° K.3. The single-crystal perovskite of claim 1 , wherein a ...

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04-01-2018 дата публикации

SEMICONDUCTOR LAMINATE

Номер: US20180005816A1
Принадлежит:

A semiconductor laminate includes a silicon carbide substrate having a first main surface and a second main surface opposite the first main surface, and an epitaxial layer composed of silicon carbide disposed on the first main surface. The second main surface has an average value of roughness Ra of 0.1 μm or more and 1 μm or less with a standard deviation of 25% or less of the average value. 1. A semiconductor laminate comprising:a silicon carbide substrate having a first main surface and a second main surface opposite the first main surface; andan epitaxial layer composed of silicon carbide disposed on the first main surface,wherein the second main surface has an average value of roughness Ra of 0.1 μm or more and 1 μm or less with a standard deviation of 25% or less of the average value.2. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a bow of more than 0 μm and 10 μm or less when the first main surface is placed upward.3. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 75 mm or more.4. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 100 mm or more.5. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 150 mm or more.6. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 200 mm or more.7. The semiconductor laminate according to claim 1 , wherein the silicon carbide substrate and the silicon carbide epitaxial layer each contain an impurity that generates majority carriers claim 1 , anda concentration of the impurity in the silicon carbide substrate is higher than a concentration of the impurity in the epitaxial layer.8. The semiconductor laminate according to claim 2 , wherein the semiconductor laminate has a diameter of 75 mm or more.9. The semiconductor laminate according to claim 2 , wherein the semiconductor ...

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07-01-2021 дата публикации

SiC FILM STRUCTURE

Номер: US20210005491A1
Автор: Satoshi Kawamoto
Принадлежит: Admap Inc

A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

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02-01-2020 дата публикации

Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate

Номер: US20200006049A1
Принадлежит: Sciocs Co Ltd, Sumitomo Chemical Co Ltd

A nitride semiconductor substrate is manufactured by a method which includes growing nitride semiconductor crystal along a c-axis direction on a +C-plane of a seed crystal substrate formed of nitride semiconductor crystal to form an n − -type first nitride semiconductor layer; growing the nitride semiconductor crystal along the c-axis direction on the +C-plane of the first nitride semiconductor layer to form a second nitride semiconductor layer; and removing the seed crystal substrate and exposing a −C-plane of the first nitride semiconductor layer to obtain as a semiconductor substrate a laminate of the first nitride semiconductor layer and the second nitride semiconductor layer, with the −C plane as a main surface.

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03-01-2019 дата публикации

METHOD OF PRODUCING LITHIUM NIOBATE SINGLE CRYSTAL SUBSTRATE

Номер: US20190007025A1
Автор: Kajigaya Tomio
Принадлежит: SUMITOMO METAL MINING CO., LTD.

To provide a method of producing a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and also variations in volume resistivity are small among substrates machined from the same ingot. 1. A method of producing a lithium niobate single crystal substrate by using a lithium niobate single crystal grown by the Czochralski process , wherein{'sub': 2', '3, 'sup': 8', '12, 'a lithium niobate single crystal having a Fe concentration of 50 mass ppm or more and 2000 mass ppm or less in the single crystal and being in a form of an ingot is buried in an Al powder or a mixed powder of Al and AlO, and heat-treated at a temperature of 450° C. or more and less than 660° C., which is a melting point of aluminum, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×10Ω·cm or more to 2×10Ω·cm or less.'}2. The method of producing a lithium niobate single crystal substrate according to claim 1 , whereinthe lithium niobate single crystal being in the form of an ingot to be heat-treated is a lithium niobate single crystal ingot after growth of the single crystal and until after cylindrical abrading process.3. The method of producing a lithium niobate single crystal substrate according to claim 2 , whereina surface roughness of the lithium niobate single crystal ingot after the cylindrical abrading process is 0.2 μm or more and 2 μm or less in arithmetic average roughness Ra.4. The method of producing a lithium niobate single crystal substrate according to claim 1 , whereinthe heat treatment is conducted in a vacuum atmosphere or in a reduced-pressure atmosphere of an inert gas.5. The method of producing a lithium niobate single crystal substrate according to claim 1 , whereinthe heat treatment is conducted for 10 hours or more.6. The method of producing a lithium ...

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08-01-2015 дата публикации

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

Номер: US20150010726A1
Принадлежит: Sumitomo Electric Industries, Ltd.

Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container. 1. A method of manufacturing a silicon carbide single crystal , comprising the steps of:preparing a crucible having a first side and a second side opposite to said first side;arranging a solid source material for growing silicon carbide with a sublimation method, on said first side in said crucible;arranging a seed crystal made of silicon carbide on said second side in said crucible;arranging said crucible in a heat insulating container, said heat insulating container having an opening facing said second side of said crucible;heating said crucible such that said solid source material sublimes and recrystallizes on said seed crystal; andmeasuring a temperature on said second side of heated said crucible through said opening in said heat insulating container, said opening in said heat insulating container having a tapered inner surface narrowed toward outside of said heat insulating container.2. The method of manufacturing a silicon carbide single crystal according to claim 1 , whereina direction of normal of said tapered inner surface of said opening in said heat insulating container is inclined by not smaller than 120° and not greater than 170°, with respect to a direction from said first side of said crucible to said second side of said crucible.3. The method of manufacturing a silicon ...

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12-01-2017 дата публикации

PRODUCTION METHOD OF SiC SINGLE CRYSTAL

Номер: US20170009373A1
Принадлежит:

The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si—C solution. In the contact step B, a contact region between the principal surface and the stored Si—C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si—C solution. 1. A production method of an SiC single crystal by a solution growth process in which a principal surface of a seed crystal is arranged to face downward and brought into contact with an Si—C solution , thereby making an SiC single crystal grow on the principal surface , whereinthe principal surface is flat, andthe production method comprises:a contact step A of bringing a partial region of the principal surface into contact with a stored Si—C solution;a contact step B of leaving a contact region between the principal surface and the stored Si—C solution to expand, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A; anda growth step of making an SiC single crystal grow on the principal surface which is in contact with the stored Si—C solution.2. The production method according to claim 1 , whereinthe contact step A comprises:{'b': '1', 'i': 'a', 'a step A-of bringing the principal surface into contact with the stored Si—C solution, and thereafter detaching the principal surface from the stored Si—C solution, thereby leading to a state in which the Si—C solution adheres to a partial region of the principal surface; and'}{'b': '1', 'i': 'b', 'a step A-of bringing the Si—C solution having ...

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12-01-2017 дата публикации

Sic single crystal and method for producing same

Номер: US20170009374A1
Автор: Takayuki Shirai
Принадлежит: Toyota Motor Corp

A p-type SiC single crystal having lower resistivity than the prior art is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: using as the Si—C solution a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al; and contacting a (0001) face of the SiC seed crystal substrate with the Si—C solution to grow a SiC single crystal from the (0001) face.

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27-01-2022 дата публикации

MANUFACTURING METHOD OF SILICON CARBIDE WAFER AND SEMICONDUCTOR STRUCTURE

Номер: US20220025547A1
Автор: Lin Ching-Shan
Принадлежит: GlobalWafers Co., Ltd.

A manufacturing method of a silicon carbide wafer includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A nitrogen content in the reactor is reduced, which includes the following. An argon gas is passed into the reactor, where a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours. The reactor and the raw material are heated to form a silicon carbide material on the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. The silicon carbide ingot is cut to obtain a plurality of silicon carbide wafers. A semiconductor structure is also provided. 1. A manufacturing method of a silicon carbide wafer , comprising:providing a raw material containing carbon and silicon and a seed located above the raw material in a reactor; 'passing an argon gas into the reactor, wherein a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours;', 'reducing a nitrogen content in the reactor, comprisingheating the reactor and the raw material to form a silicon carbide material on the seed;cooling the reactor and the raw material to obtain a silicon carbide ingot; andcutting the silicon carbide ingot to obtain a plurality of silicon carbide wafers.2. The manufacturing method as described in claim 1 , wherein reducing the nitrogen content in the reactor comprises: before passing the argon gas into the reactor claim 1 , performing a first vacuum process on the reactor claim 1 , such that an air pressure in the reactor is 0.1 torr to 100 torr.3. The manufacturing method as described in claim 1 , wherein a resistivity of the silicon carbide ingot is 0.1 ohm/cm to 10 ohms/cm claim 1 , and a resistivity of each of the silicon carbide wafers is 0.1 ohm/cm to 10 ohms/cm.4. The ...

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27-01-2022 дата публикации

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

Номер: US20220025549A1
Принадлежит: GlobalWafers Co., Ltd.

A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer. 1. A silicon carbide wafer , wherein in the silicon carbide wafer , a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1 , and a portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.2. The silicon carbide wafer according to claim 1 , wherein in the silicon carbide wafer claim 1 , the nitrogen concentration is within a range of 10atom/cmto 9.9*10atom/cm claim 1 , and the vanadium concentration is within a range of 10atom/cmto 9*10atom/cm.3. The silicon carbide wafer according to claim 2 , wherein in the silicon carbide wafer claim 2 , the nitrogen concentration is within a range of 10atom/cmto 5*10atom/cm claim 2 , and the vanadium concentration is within a range of 10atom/cmto 3.5*10atom/cm.4. The silicon carbide wafer according to claim 2 , wherein in the silicon carbide wafer claim 2 , the nitrogen concentration is within a range of 5*10atom/cmto 7*10atom/cm claim 2 , and the vanadium concentration is within a range of 3.5*10atom/cmto 5*10atom/cm.5. The silicon carbide wafer according to claim 1 , wherein the ratio (V:N) of the vanadium concentration to the nitrogen concentration is in a range of 4.5:1 to 10:1 claim 1 , and the portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 90% of the entire wafer area of the silicon carbide wafer.6. The silicon carbide wafer according to claim 1 , wherein the ratio (V:N) of the vanadium concentration to the nitrogen concentration is in a range of 7:1 to 10:1 claim 1 ...

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14-01-2021 дата публикации

ALUMINUM NITRIDE PLATE

Номер: US20210009418A1
Принадлежит: NGK Insulators, Ltd.

An aluminum nitride plate satisfies both of a “relation 1: c>97.5%” and a “relation 2: c/c<0.995” where c is a c-plane degree of orientation that is defined as a ratio of a diffraction intensity of (002) plane to a sum of the diffraction intensity of (002) plane and a diffraction intensity of (100) plane when the surface layer of the aluminum nitride plate is subjected to an X-ray diffraction measurement, and c is a c-plane degree of (002) plane to the sum of the diffraction intensity of (002) plane and the diffraction intensity of (100) plane when a portion other than the surface layer of the aluminum nitride plate is subjected to the X-ray diffraction. Moreover, in the aluminum nitride plate, a difference in nitrogen content between the surface layer and the portion other than the surface layer is less than 0.15% in weight ratio. 1. An aluminum nitride plate , wherein [{'b': '1', '(1): c>97.5%'}, {'b': 2', '1, '(2): c/c<0.995'}, {'b': '1', 'where c is a c-plane degree of orientation that is defined as a ratio of a diffraction intensity of (002) plane to a sum of the diffraction intensity of (002) plane and a diffraction intensity of (100) plane when a surface layer of the aluminum nitride plate is subjected to an X-ray diffraction measurement along a thickness direction of the surface layer, and'}, {'b': '2', 'c is a c-plane degree of orientation that is defined as a ratio of the diffraction intensity of (002) plane to the sum of the diffraction intensity of (002) plane and the diffraction intensity of (100) plane when a portion other than the surface layer of the aluminum nitride plate is subjected to the X-ray diffraction measurement along a thickness direction of the portion, and'}], 'the aluminum nitride plate satisfies both of following relations (1) and (2),'}a difference in nitrogen content between the surface layer and the portion other than the surface layer is less than 0.15 percent in weight ratio.2. The aluminum nitride plate according to claim 1 , ...

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14-01-2021 дата публикации

High Purity SiOC and SiC, Methods Compositions and Applications

Номер: US20210009430A1
Принадлежит: Pallidus, Inc.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. 136-. (canceled)37. A method of making an article comprising ultra pure silicon carbide , the method comprising:a. combining a first liquid comprising silicon, carbon and oxygen with a second liquid comprising carbon;b. curing the combination of the first and second liquids to provide a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen;c. heating the SiOC solid material in an inert atmosphere and at a temperature sufficient to convert SiOC to SiC, thereby converting the SiOC solid material to an ultra pure polymer derived SiC having a purity of at least 99.999%; and,d. forming a single crystal SiC structure, comprising a polytype selected from the group consisting of 4H SiC, 6H SiC and 3C SiC, by vapor deposition of the ultra pure polymer derived SiC; wherein the vapor deposed structure is defect free and has a purity of at least 99.9999%.38. The method of claim 37 , wherein the single crystal SiC structure consists essentially of 4H SiC.39. The method of claim 37 , wherein the single crystal SiC structure consists essentially of 6H SiC.40. The method of claim 37 , wherein the single crystal SiC structure consists of 4H SiC.41. The method of claim 37 , wherein the single crystal SiC structure consists of 6H SiC.42. The method of claim 37 , wherein the combination of the first and the second liquids is a polysilocarb precursor formulation having a molar ratio of about 30% to 85% carbon claim 37 , about 5% to 40% oxygen claim 37 , and about 5% to 35% silicon.43. The method of claim 37 , wherein the single crystal SiC structure is a boule.44. The method of claim 37 , wherein the single crystal SiC is a layer.45. The method of claim 37 , wherein the single ...

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11-01-2018 дата публикации

NITRIDE SEMICONDUCTOR TEMPLATE, MANUFACTURING METHOD THEREOF, AND EPITAXIAL WAFER

Номер: US20180010246A1
Принадлежит:

A nitride semiconductor template includes a heterogeneous substrate, a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, includes a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%, and a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, includes the nitride semiconductor and has a thickness of not less than 1 μm. 1. A nitride semiconductor template , comprising:a heterogeneous substrate;a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, comprises a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%; anda second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, comprises the nitride semiconductor and has a thickness of not less than 1 μm.2. The nitride semiconductor template according to claim 1 , wherein the heterogeneous substrate comprises a circular substrate claim 1 , andwherein the annular region comprises a region in the other surface outside a circle that is centered at a center of the heterogeneous substrate and has a 2-mm smaller radius than a radius of the heterogeneous substrate.3. The nitride semiconductor template according to claim 1 , wherein a shape of a region in the other surface surrounded by the annular region is a circle centered at a center of the heterogeneous substrate.4. The nitride semiconductor template according to claim 1 , wherein an amount of warpage (Warp) is not more than 100 μm.5. The nitride semiconductor template according to claim 4 , wherein a difference in thickness between the first nitride semiconductor layer and the second nitride semiconductor layer is not more than 5 μm.6. The nitride semiconductor template according to claim 1 , wherein the nitride semiconductor ...

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14-01-2021 дата публикации

ALN CRYSTAL PREPARATION METHOD, ALN CRYSTALS, AND ORGANIC COMPOUND INCLUDING ALN CRYSTALS

Номер: US20210009885A1
Принадлежит:

A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals. 1. A method for producing AlN crystals , comprising:using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN;melting a composition containing at least Al and the element; andreacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.2. The method for producing AlN crystals according to claim 1 , wherein the element used is any of Li claim 1 , Mg claim 1 , V claim 1 , Cr claim 1 , Mn claim 1 , Fe claim 1 , Co claim 1 , Ni claim 1 , Cu claim 1 , Ga claim 1 , Ge claim 1 , Sr and Sn.3. The method for producing AlN crystals according to claim 1 , wherein the element used is an element that satisfies a condition under which the interaction energy with Al becomes negative and also satisfies a condition under which the absolute value of this interaction energy is larger than the interaction energy between Al and Ge.4. The method for producing AlN crystals according to claim 2 , wherein the element used is an element that satisfies a condition under which the interaction energy with Al becomes negative and also satisfies a condition under which the absolute value of this interaction energy is larger than the interaction energy between Al and Ge.5. The method for producing AlN ...

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14-01-2021 дата публикации

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

Номер: US20210010157A1
Принадлежит: SHIN-ETSU HANDOTAI CO., LTD.

A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view. 13-. (canceled)4. A method for manufacturing a silicon carbide single crystal in which a growth container is surrounded by a heat-insulating material with a hole for temperature measurement provided in a top portion thereof , a seed crystal substrate is disposed at a center of an upper portion inside the growth container , a silicon carbide raw material is disposed at a lower portion of the growth container , and the silicon carbide raw material is sublimated to grow a silicon carbide single crystal on the seed crystal substrate , whereinto allow a position of a center of the hole for temperature measurement in the heat-insulating material to deviate from a position of a center of the seed crystal substrate disposed inside the growth container, the hole for temperature measurement is provided to deviate to a position on a periphery side relative to the center of the seed crystal substrate disposed inside the growth container,a silicon carbide single crystal substrate having a main surface tilted by an off angle from a {0001} plane which is a basal plane is used as the seed ...

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14-01-2021 дата публикации

SILICON CARBIDE EPITAXIAL GROWTH DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

Номер: US20210010158A1
Принадлежит: Mitsubishi Electric Corporation

Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the susceptor by heating by induction heating coils placed around the susceptor, thereby epitaxial growth is fostered, and stable and proper device characteristics are obtained, moreover, the yield in a manufacturing step of the silicon carbide epitaxial wafer is significantly improved. 1. A silicon carbide epitaxial growth device comprising:a wafer holder on which a silicon carbide substrate is mounted;a turntable on which the wafer holder is mounted;a susceptor covering the silicon carbide substrate and the wafer holder, and into which a growth gas, a doping gas, and a carrier gas are supplied;induction heating coils provided around the susceptor, anda tantalum carbide member mounted on a peripheral edge portion in an upper portion of the wafer holder and outside of the silicon carbide substrate.2. The silicon carbide epitaxial growth device according to claim 1 , whereinthe tantalum carbide member includes a tantalum carbide layer as a surface layer thereof which is formed from a carbon material, the tantalum carbide member being replaceable.3. The silicon carbide epitaxial growth device according to claim 1 , whereinthe tantalum carbide member has a shape extending along an outer peripheral of the wafer holder which is on outside of the silicon carbide substrate.4. The silicon carbide epitaxial growth device according to claim 1 , whereinthe wafer holder has a step shape at a peripheral edge portion thereof and the tantalum carbide member is mounted at a step of the peripheral edge portion of the wafer holder.5. A method of manufacturing a silicon carbide epitaxial wafer comprising:carrying a wafer holder loaded with a silicon carbide substrate and a ...

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14-01-2021 дата публикации

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

Номер: US20210010161A1
Принадлежит: SHIN-ETSU HANDOTAI CO., LTD.

A method for manufacturing a silicon carbide single crystal sublimates a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The seed crystal substrate used is a substrate having a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container, and a convex-shaped end face of a grown ingot as a crystal growth surface. A diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container. Thereby, the method for manufacturing a silicon carbide single crystal enables high straight-body percentage and little formation of different polytypes even in growth with no off-angle control, i.e., the growth is directed onto a basal plane which is not inclined from a C-axis <0001>. 1 a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container; and', 'a convex-shaped end face of a grown ingot as a crystal growth surface, and, 'a substrate used as the seed crystal substrate comprisesa diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container.. A method for manufacturing a silicon carbide single crystal by sublimating a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate, wherein The present invention relates to a method for manufacturing silicon carbide in which a silicon carbide crystal is grown by a sublimation method.Recently, inverter circuits have been commonly used in electric vehicles and electric air-conditioners. This creates demands for semiconductor crystal of silicon carbide (hereinafter may also be referred to as SiC) because of the properties of less power loss and higher breakdown voltage in devices than those using semiconductor Si crystal.As a typical and practical method for growing a crystal with a high melting point or a crystal that is difficult to grow by liquid phase growth such as SiC ...

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10-01-2019 дата публикации

METHOD FOR PRODUCING GaN CRYSTAL

Номер: US20190010605A1

The present invention provides a novel method for producing a GaN crystal, the method including growing GaN from vapor phase on a semi-polar or non-polar GaN surface using GaCl3 and NH3 as raw materials. Provided herein is an invention of a method for producing a GaN crystal, including the steps of: (i) preparing a GaN seed crystal having a non-polar or semi-polar surface whose normal direction forms an angle of 85° or more and less than 170° with a [0001] direction of the GaN seed crystal; and (ii) growing GaN from vapor phase on a surface including the non-polar or semi-polar surface of the GaN seed crystal using GaCl3 and NH3 as raw materials.

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10-01-2019 дата публикации

METHOD FOR MANUFACTURING SINGLE-CRYSTAL SiC, AND HOUSING CONTAINER

Номер: US20190010629A1
Принадлежит: TOYO TANSO CO., LTD.

Provided is a method for producing high-purity SiC single crystal, which is applicable to a process of growing SiC single crystal through a solution growth method. This method is for producing SiC single crystal and includes growing, through a solution growth method, an epitaxial layer on a seed material, at least a surface of which is made of SiC, wherein the SiC single crystal is grown so that impurity concentrations therein measured by secondary ion mass spectrometry are very small. Also provided is a housing container for growing SiC single crystal through a solution growth method using a Si melt, including a feed material that is disposed on at least a surface of the housing container and adds, to the Si melt, an additional material that is SiC and/or C. Performing the solution growth method using this housing container can produce high-purity SiC single crystal without any special treatment. 1. A method for producing silicon carbide single crystal , comprising:growing, through a solution growth method, an epitaxial layer on a seed material, at least a surface of which is made of silicon carbide, whereinthe epitaxial layer is grown to yield silicon carbide single crystal whose impurity concentrations measured by secondary ion mass spectrometry satisfy the following conditions:{'sup': 16', '3, '4.00×10or less (atoms/cm) of aluminum;'}{'sup': 14', '3, '3.00×10or less (atoms/cm) of titanium;'}{'sup': 15', '3, '7.00×10or less (atoms/cm) of chromium; and'}{'sup': 15', '3, '1.00×10or less (atoms/cm) of iron.'}2. The method according to claim 1 , whereinthe impurity concentrations in the silicon carbide single crystal further satisfy the following conditions:{'sup': 13', '3, '2.00×10or less (atoms/cm) of sodium;'}{'sup': 14', '3, '1.00×10or less (atoms/cm) of phosphorus;'}{'sup': 14', '3, '1.00×10or less (atoms/cm) of calcium;'}{'sup': 12', '3, '1.00×10or less (atoms/cm) of vanadium;'}{'sup': 14', '3, '5.00×10or less (atoms/cm) of nickel; and'}{'sup': 14', '3, '2.00× ...

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27-01-2022 дата публикации

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

Номер: US20220028688A1
Принадлежит: Mitsubishi Electric Corporation

Provided is a method of manufacturing a silicon carbide epitaxial wafer appropriate for suppressing an occurrence of a triangular defect. A method of manufacturing a silicon carbide epitaxial wafer includes: an etching process of etching a surface of a silicon carbide substrate at a first temperature using etching gas including H; a process of flattening processing of flattening the surface etched in the etching process, at a second temperature using gas including Hgas, first Si supply gas, and first C supply gas; and an epitaxial layer growth process of performing an epitaxial growth on the surface flattened in the process of flattening processing, at a third temperature using gas including second Si supply gas and second C supply gas, wherein the first temperature T, the second temperature T, and the third temperature Tsatisfy T>T>T. 1. A method of manufacturing a silicon carbide epitaxial wafer , comprising:{'sub': '2', 'etching a surface of a silicon carbide substrate at a first temperature using etching gas including H;'}{'sub': '2', 'flattening the surface etched by the etching, at a second temperature using gas including Hgas, first Si supply gas, and first C supply gas; and'}performing an epitaxial growth on the surface flattened by the flattening, at a third temperature using gas including second Si supply gas and second C supply gas, wherein{'sub': 1', '2', '3', '1', '2', '3, 'the first temperature T, the second temperature T, and the third temperature Tsatisfy T>T>T,'}2. The method of manufacturing the silicon carbide epitaxial wafer according to claim 1 , whereinthe first Si supply gas and the second Si supply gas are identical Si supply gas, andthe first C supply gas and the second C supply gas are identical C supply gas.3. The method of manufacturing the silicon carbide epitaxial wafer according to claim 2 , wherein{'sub': 4', '3', '8, 'the first Si supply gas is SiHgas, and the first C supply gas CHgas.'}4. The method of manufacturing the silicon ...

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09-01-2020 дата публикации

Silicon Based Fusion Composition and Manufacturing Method of Silicon Carbide Single Crystal Using the Same

Номер: US20200010973A1
Принадлежит: LG CHEM, LTD.

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): 1. A silicon fusion composition for a solution growth method for forming a silicon carbide single crystal , comprising:silicon, a first metal (M1), scandium (Sc) and aluminum (Al), [{'br': None, 'sub': a', 'b', 'c', 'd, 'SiM1ScAl\u2003\u2003(Formula 1)'}, 'wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1., 'as represented by the following Formula 12. The silicon fusion composition of claim 1 , wherein:the first metal (M1) is one or more selected from the group consisting of titanium (Ti), chromium (Cr), vanadium (V), yttrium (Y), manganese (Mn), iron (Fe), cobalt (Co), boron (B), cerium (Ce), lanthanum (La) and praseodymium (Pr).3. The silicon fusion composition of claim 1 , wherein:in Formula 1, a is more than 0.5 and less than 0.7, b is more than 0.2 and less than 0.4, and d is more than 0.01 and less than 0.05.4. The silicon fusion composition of claim 1 , wherein:the silicon fusion composition has a carbon solubility of 5% or more.5. A silicon fused solution claim 1 , comprising: the silicon fusion composition of and carbon claim 1 , wherein the scandium increases a carbon solubility in the silicon fused solution.6. A manufacturing method of a silicon carbide single crystal comprising:preparing a silicon carbide seed crystal; {'br': None, 'sub': a', 'b', 'c', 'd, 'SiM1ScAl\u2003\u2003(Formula 1)'}, 'preparing a silicon fusion composition comprising: silicon (Si), a first metal (M1), scandium (Sc) and aluminum (Al), as represented by the following Formula 1;'}wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6 m c us nire than 0.01 and less than 0.1, and d is ...

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09-01-2020 дата публикации

Method for evaluating quality of sic single crystal body and method for producing silicon carbide single crystal ingot using the same

Номер: US20200010974A1
Принадлежит: Showa Denko KK

A method for evaluating the quality of a SiC single crystal by a non-destructive and simple method; and a method for producing a SiC single crystal ingot with less dislocation and high quality with good reproducibility utilizing the same. The method for evaluating the quality of a SiC single crystal body is based on the graph of a second polynomial equation obtained by differentiating a first polynomial equation, the first polynomial equation approximating the relation between a peak shift value and a position of the measurement point and the peak shift value being obtained by an X-ray rocking curve measurement. The method for producing a SiC single crystal ingot manufactures a SiC single crystal ingot by a sublimation recrystallization method using, as a seed crystal, the SiC single crystal body evaluated by the evaluation method.

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15-01-2015 дата публикации

SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEVICE, AND METHOD FOR PRODUCING SINGLE CRYSTAL

Номер: US20150013590A1
Принадлежит:

The aim of the present invention is to provide a seed crystal holding shaft that is used in a device for producing single crystals by a solution process that allows for faster growth of SiC single crystals than in the past, and a method for producing single crystals by the solution process. The seed crystal holding shaft used in a device for producing single crystals by the solution process is a seed crystal holding shaft wherein at least a portion of a side of the seed crystal holding shaft is covered by a reflectance member having a higher reflectance than the reflectance of the seed crystal holding shaft and the reflector member is disposed such that there is a space between the reflector member and the seed crystals held on the end face of the seed crystal holding shaft. 1. A seed crystal holding shaft to be used in a single crystal production device employed in a solution process , whereinat least a portion of the side face of the seed crystal holding shaft is covered with a reflector member having higher reflectance than the reflectance of the seed crystal holding shaft, andthe reflector member is disposed so as to leave a gap between the reflector member and the seed crystal held on the end face of the seed crystal holding shaft.2. The seed crystal holding shaft according to claim 1 , wherein at least 50% of the side face of the seed crystal holding shaft is covered by the reflector member.3. The seed crystal holding shaft according to claim 1 , wherein the reflectance of the reflector member is 0.4 or greater.4. The seed crystal holding shaft according to claim 1 , wherein the reflector member is a carbon sheet.5. The seed crystal holding shaft according to claim 4 , wherein the average thickness of the carbon sheet is 0.05 mm or greater.6. The seed crystal holding shaft according to claim 1 , wherein the seed crystal holding shaft is made of graphite.7. A method for producing a SiC single crystal by a solution process in which a SiC seed crystal held on a ...

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15-01-2015 дата публикации

SILICON CARBIDE CRYSTAL GROWTH IN A CVD REACTOR USING CHLORINATED CHEMISTRY

Номер: US20150013595A1
Автор: Janzén Erik, Kordina Olof
Принадлежит:

A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method. 1. A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber , wherein the reaction chamber is heated to a temperature in the region 1600° C. to 2000° C. , the method comprising:entering process gases into the reaction chamber by use of at least three gas flows, a primary gas flow, a secondary gas flow surrounding the primary gas flow, and a shower gas flow, wherein said primary and secondary gas flows stream substantially parallel to the surface of the substrate, and where the shower gas flow is fed substantially perpendicularly to the primary and the secondary gas flows and being directed towards the substrate,a chlorine containing silicon precursor gas is entered into the reaction chamber utilizing the primary gas flow together with a carrier gas, and optionally together with an amount of HCl,a hydrocarbon precursor gas is entered into the reaction chamber according to one of the following alternatives:together with the chlorine containing silicon precursor gas and a small flow ratio x of hydrogen in the primary flow,together with a flow ratio y of hydrogen, and ...

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10-01-2019 дата публикации

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер: US20190013198A1
Принадлежит:

A silicon carbide epitaxial substrate includes: a silicon carbide single crystal substrate; a first silicon carbide layer on the silicon carbide single crystal substrate, the first silicon carbide layer having a first concentration of carriers; and a second silicon carbide layer on the first silicon carbide layer, the second silicon carbide layer having a second concentration of carriers. A transition region in which the concentration of the carriers is changed between the first concentration and the second concentration has a width of less than or equal to 1 μm. A ratio of a standard deviation of the second concentration to an average value of the second concentration is less than or equal to 5%, the ratio being defined as uniformity of the second concentration in a central region. The central region has an arithmetic mean roughness of less than or equal to 0.5 nm. 1. A silicon carbide epitaxial substrate comprising:a silicon carbide single crystal substrate having a first main surface;a first silicon carbide layer on the silicon carbide single crystal substrate, the first silicon carbide layer having a first concentration of carriers; anda second silicon carbide layer on the first silicon carbide layer, the second silicon carbide layer having a second concentration of carriers smaller than the first concentration, the second silicon carbide layer including a second main surface opposite to the first main surface,in a concentration profile of the carriers along a layering direction in which the first silicon carbide layer and the second silicon carbide layer are layered, a transition region in which the concentration of the carriers is changed between the first concentration and the second concentration having a width of less than or equal to 1 μm,a ratio of a standard deviation of the second concentration to an average value of the second concentration being less than or equal to 5%, the ratio being defined as uniformity of the second concentration in a central ...

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09-01-2020 дата публикации

SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер: US20200013907A1
Принадлежит:

It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×10cmor more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×10cm. 1. A silicon carbide substrate comprising:a substrate inner portion; anda substrate outer portion surrounding the substrate inner portion, wherein{'sup': 16', '−3, 'a non-dopant metal impurity concentration of the substrate inner portion is 1×10cmor more, and'}{'sup': 16', '−3, 'a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×10cm.'}2. The silicon carbide substrate according to claim 1 , wherein{'sup': '31 2', 'average threading screw dislocation density in the substrate surface region is 100 cmor less.'}3. The silicon carbide substrate according to claim 1 , whereinthe non-dopant metal impurity concentration has distribution in a thickness direction of the substrate inner portion or a direction perpendicular to the thickness direction.4. The silicon carbide substrate according to claim 1 , whereinthe non-dopant metal impurity concentration has distribution in a thickness direction of the substrate surface region or a direction perpendicular to the thickness direction.5. The silicon carbide substrate according to claim 1 , whereinan impurity concentration of the substrate inner portion is set so that the substrate inner portion has a ...

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03-02-2022 дата публикации

Thermal conductivity estimation method, thermal conductivity estimation apparatus, production method for semiconductor crystal product, thermal conductivity calculator, thermal conductivity calculation program, and, thermal conductivity calculation method

Номер: US20220034829A1
Принадлежит: Sumco Corp

A thermal conductivity estimation method includes: measuring temperature distribution of a measurement sample surface in a steady state by partially heating the measurement sample under predetermined heating conditions; calculating temperature distribution of a sample model surface by performing a heat-transfer simulation on the sample model of the same shape as the measurement sample for a plurality of combinations of provisional thermal conductivities and heating conditions; making a regression model, whose input is temperature distribution of the measurement sample surface and whose output is a thermal conductivity of the measurement sample, by a machine learning technique using training data in a form of a calculation result of the plurality of combinations and the temperature distribution obtained from the plurality of combinations; and estimating the thermal conductivity of the measurement sample by inputting a measurement result of the temperature distribution of the measurement sample surface into the regression model.

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18-01-2018 дата публикации

METHOD FOR PRODUCING CRYSTAL

Номер: US20180016703A1
Принадлежит:

A method for producing a crystal of silicon carbide includes a preparation step, a contact step, a start step, a first growth step, a cooling step, and a second growth step. 1. A method for producing a crystal of silicon carbide , the method comprising:a preparation step of preparing a solution in which carbon is dissolved in a silicon solvent, and preparing a seed crystal of silicon carbide;a contact step of bringing a lower surface of the seed crystal into contact with the solution;a start step of starting to grow a crystal from the lower surface of the seed crystal by heating the solution to a temperature in a first temperature range;a first growth step of growing the crystal after the start step by pulling up the seed crystal upward while the solution is heated from the temperature in the first temperature range to a temperature in a second temperature range;a cooling step of cooling the solution from the temperature in the second temperature range to any one of the temperatures in the first temperature range; anda second growth step of further growing the crystal after the cooling step by pulling up the seed crystal upward while the solution is heated from the temperature in the first temperature range to any one of the temperatures in the second temperature range.2. The method according to claim 1 , whereinthe cooling step and the second growth step are each repeated.3. The method according to claim 1 , whereinthe crystal is detached from the solution in the cooling step.4. The method according to claim 1 , whereinthe solution is cooled in the cooling step keeping the crystal in contact with the solution.5. The method according to claim 1 , whereina silicon raw material is added to the solution in the cooling step.6. The method according to claim 1 , whereinthe solution is heated in the first growth step to a temperature in the second temperature range from a temperature in the first temperature range keeping a degree of supersaturation of carbon in the ...

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18-01-2018 дата публикации

SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

Номер: US20180016706A1
Принадлежит: SHOWA DENKO K.K.

An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer. 1. An SiC epitaxial wafer comprising an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane ,wherein a trapezoidal defect included in the SiC epitaxial wafer comprises an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow.2. The SiC epitaxial wafer according to claim 1 , wherein a ratio of the inverted trapezoidal defect in the trapezoidal defect is 50% or more.3. The SiC epitaxial wafer according to claim 1 , wherein the inverted trapezoidal defect comprises an inverted trapezoidal defect having a length of the lower base on the downstream side of the step flow of 0 and a triangular shape.4. A method for manufacturing an SiC epitaxial wafer which is a method for manufacturing the SiC epitaxial wafer according to claim 1 , the method comprising:an etching step for etching an SiC single crystal substrate; andan epitaxial growth step for growing an epitaxial layer on the SiC single crystal substrate after etching,wherein in the epitaxial growth step, a concentration ratio C/Si of a Si-based source gas and a C-based source gas is set to 1.0 or less.5. The method for manufacturing an SiC epitaxial wafer according to claim 4 , wherein a temperature in the epitaxial growth step is set to 1 claim 4 ,630° C. or less.6. The method for manufacturing ...

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16-01-2020 дата публикации

SiC-MONOCRYSTAL GROWTH CRUCIBLE

Номер: US20200017990A1
Принадлежит:

Provided is an SiC-monocrystal growth crucible that includes, at the interior thereof, a monocrystal installation part and a raw-material installation part, and that serves as a crucible for obtaining an SiC monocrystal by means of sublimation, wherein the gas permeability of a first wall of the crucible, which surrounds at least a portion of a first region positioned closer to the raw-material installation part relative to the monocrystal installation part, is lower than the gas permeability of a second wall of the crucible, which surrounds at least a portion of a second region positioned on the opposite side from the raw-material installation part relative to the monocrystal installation part. 1. A crucible for growing a SiC single crystal which is a crucible for obtaining a SiC single crystal by a sublimation method ,the crucible comprising, in an interior thereof:a single crystal setting section; anda raw material setting section,wherein a gas permeability of a first wall of said crucible surrounding at least a part of a first region located on said raw material setting section side with reference to said single crystal setting section is lower than a gas permeability of a second wall of said crucible surrounding at least a part of a second region located on an opposite side of said raw material setting section with reference to said single crystal setting section.2. The crucible for growing a SiC single crystal according to claim 1 , wherein a gas permeability of said first wall is 90% or less of a gas permeability of said second wall.3. The crucible for growing a SiC single crystal according to either claim 1 , wherein a part of said first wall comprises a gas shielding member.4. The crucible for growing a SiC single crystal according to claim 3 , wherein said gas shielding member is provided inside or on an outer periphery of said first wall.5. The crucible for growing a SiC single crystal according to either claim 3 , wherein said gas shielding member is any ...

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16-01-2020 дата публикации

MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер: US20200017991A1
Автор: Ohno Akihito
Принадлежит: Mitsubishi Electric Corporation

A silicon carbide substrate () is positioned such that a principal surface of the silicon carbide substrate () is parallel to a plurality of injection holes () of a horizontal CVD apparatus arranged in a row. Source gas is fed from the plurality of injection holes () to epitaxially grow a silicon carbide epitaxial growth layer () on the principal surface of the silicon carbide substrate (). The source gas fed from the plurality of injection holes () is divided into a plurality of system lines and controlled individually by separate mass flow controllers. A flow rate of the source gas on the principal surface of the silicon carbide substrate () is greater than 1 m/sec. 1. A manufacturing method for a silicon carbide epitaxial wafer comprising:positioning a silicon carbide substrate such that a principal surface of the silicon carbide substrate is parallel to a plurality of injection holes of a horizontal CVD apparatus arranged in a row; andan epitaxial growth step of feeding source gas and carrier gas from the plurality of injection holes to epitaxially grow a silicon carbide epitaxial growth layer on the principal surface of the silicon carbide substrate,wherein the source gas and the carrier gas fed from the plurality of injection holes is divided into a plurality of system lines and controlled individually by separate mass flow controllers,the plurality of system lines includes a first system line and a second system line,a total flow rate of the source gas fed from one of the injection holes connected to the first system line is different from a total flow rate of the source gas fed from one of the injection holes connected to the second system line,flow rates of the source gas and the carrier gas are adjusted in accordance with a number of the injection holes for each of the system lines so that the flow rates of the source gas and the carrier gas fed from the plurality of injection holes in the epitaxial growth step is uniform, anda flow rate of the source gas ...

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19-01-2017 дата публикации

Positive electrode material, positive electrode for nonaqueous-electrolyte secondary battery, and nonaqueous-electrolyte secondary battery

Номер: US20170018771A1
Принадлежит: Denso Corp

A positive electrode material includes Li 2 Ni α M 1 η M 2 β O 4-γ , where 0<(α+η)≦2; 0≦η<0.5; 0<β≦2; 0≦γ≦1; 1≦(α+η+β)≦2.1; 0.8<β/(α+η); M 1 is Mn; M 2 is at least one selected from Ge and Sn; and Ni and M 1 has a local structure of six-coordination. The positive electrode material is used for a positive electrode for nonaqueous-electrolyte secondary battery and a nonaqueous-electrolyte secondary battery.

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22-01-2015 дата публикации

Seed crystal holder, crystal growing device, and crystal growing method

Номер: US20150020730A1
Принадлежит: Kyocera Corp

A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

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17-01-2019 дата публикации

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Номер: US20190019868A1
Принадлежит: Sumitomo Electric Industries Ltd

A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. The silicon carbide single crystal substrate has a first main surface. The silicon carbide layer is on the first main surface. The silicon carbide layer includes a second main surface opposite to a surface thereof in contact with the silicon carbide single crystal substrate. The second main surface has a maximum diameter of more than or equal to 100 mm. The second main surface includes an outer peripheral region which is within 3 mm from an outer edge of the second main surface, and a central region surrounded by the outer peripheral region. The central region has a haze of less than or equal to 75 ppm.

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22-01-2015 дата публикации

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR

Номер: US20150023394A1
Принадлежит:

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TiAl(NO)(where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0 Подробнее

16-01-2020 дата публикации

SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER, SIC DEVICE, AND POWER CONVERSION APPARATUS

Номер: US20200020528A1
Принадлежит: Mitsubishi Electric Corporation

A SiC substrate () has an off angle θ°. A SiC epitaxial layer () having a film thickness of Tm μm is provided on the SiC substrate (). Triangular defects () are formed on a surface of the SiC epitaxial layer (). A density of triangular defects () having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A. A density of triangular () defects having a length smaller than Tm/Tan θ×0.9 in the substrate off direction is denoted by B. B/A≤0.5 is satisfied. 1. A SiC epitaxial wafer comprising:a SiC substrate having an off angle θ°; anda SiC epitaxial layer provided on the SiC substrate and having a film thickness of Tm μm,wherein triangular defects are formed on a surface of the SiC epitaxial layer,a density of triangular defects having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A,a density of triangular defects having a length shorter than Tm/Tan θ×0.9 in the substrate off direction is denoted by B, andB/A≤0.5 is satisfied.2. The SiC epitaxial wafer according to claim 1 , wherein the density B of the triangular defects is 0.5/cmor less.3. The SiC epitaxial wafer according to claim 1 , wherein the film thickness Tm of the SiC epitaxial layer is 30 μm or more.4. The SiC epitaxial wafer according to claim 1 , wherein a density of triangular defects shorter than Tm/Tan θ×0.5 is denoted by C claim 1 , and C/A≤0.2 is satisfied.5. The SiC epitaxial wafer according to claim 1 , wherein the SiC epitaxial layer includes two or more layers.6. A method for manufacturing the SiC epitaxial wafer according to claim 1 , comprising:placing the SiC substrate on a wafer holder and accommodating the SiC substrate placed on the wafer holder in a susceptor; andsupplying a source gas to grow the SiC epitaxial layer on the SiC substrate.7. The method for manufacturing the SiC epitaxial wafer according to claim 6 , wherein a temperature of the susceptor at a portion directly above the SiC substrate is higher than a temperature of the ...

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16-01-2020 дата публикации

SEMICONDUCTOR SUBSTRATE PRODUCTION SYSTEMS AND RELATED METHODS

Номер: US20200020586A1
Автор: Seddon Michael J.

Implementations of a method of separating a wafer from a boule including semiconductor material may include: creating a damage layer in a boule comprising semiconductor material. The boule may have a first end and a second end. The method may include cooling the first end of the boule and heating the second end of the boule. A thermal gradient may be formed between the cooled first end and the heated second end. The thermal gradient may assist a silicon carbide wafer to separate from the boule at the damage layer. 1. A method of separating a wafer from a boule comprising a semiconductor material , the method comprising:creating a damage layer in a boule comprising semiconductor material, wherein the boule has a first end and a second end; andcooling the first end of the boule;wherein a thermal gradient between the first end and the second end assists a silicon carbide wafer to separate from the boule at the damage layer.2. The method of claim 1 , wherein the damage layer is created through laser irradiation.3. The method of claim 1 , further comprising heating the second end of the boule.4. The method of claim 3 , wherein heating the second end of the boule comprises applying pulses of heat using a heating chuck.5. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.6. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.7. The method of claim 3 , further comprising placing the second side of the boule on a heating chuck and one of peeling claim 3 , prying claim 3 , and twisting the first end of the boule with a grip while applying heat to the second side of the boule.8. A method of separating a wafer from a boule of silicon carbide claim 3 , the method comprising:creating a damage layer in a boule of silicon carbide, wherein the boule has a first end and a second end;applying a ...

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16-01-2020 дата публикации

SiC WAFER AND MANUFACTURING METHOD OF SiC WAFER

Номер: US20200020777A1
Принадлежит:

In a SiC wafer, a difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and 90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density. 1. A SiC wafer , whereina difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density.2. The SiC wafer according to claim 1 ,wherein the numbers of the threading dislocations of the first surface and the second surface are substantially the same.3. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein a density of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface is 1.5 threading dislocations/mmor less.'}4. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein the difference between the threading dislocation density exposed on the first surface and the threading dislocation density exposed on the second surface is 0.02 threading dislocations/mmor less.'}5. A manufacturing method of a SiC wafer claim 1 , comprising:{'sup': '2', 'a preparation step of producing a seed crystal ...

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26-01-2017 дата публикации

DOPED RARE EARTH NITRIDE MATERIALS AND DEVICES COMPRISING SAME

Номер: US20170022632A1
Принадлежит:

Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices. 1. A magnesium-doped rare earth nitride material , wherein the rare earth nitride is selected from the group consisting of lanthanum nitride (LaN) , praseodymium nitride (PrN) , neodymium nitride (NdN) , samarium nitride (SmN) , europium nitride (EuN) , gadolinium nitride (GdN) , terbium nitride (TbN) , dysprosium nitride (DyN) , holmium nitride (HoN) , erbium nitride (ErN) , thulium nitride (TmN) , ytterbium nitride (YbN) , and lutetium nitride (LuN) , and alloys of any two or more thereof.2. (canceled)3. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material has a resistivity of at least about 25 Ω.cm.4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. A magnesium-doped rare earth nitride material as claimed in claim 1 , comprising about 10-10atoms/cmof magnesium.17. A magnesium-doped rare earth nitride material as claimed in claim 1 , further comprising one or more additional dopant(s).18. (canceled)19. (canceled)20. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material is ferromagnetic below about 70 K.21. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material has substantially the same XRD measurements as the undoped rare earth nitride.22. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material is a thin film.23. (canceled)24. (canceled)25. (canceled)26. ...

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25-01-2018 дата публикации

SYNTHESIS, CAPPING AND DISPERSION OF NANOCRYSTALS

Номер: US20180023212A1
Принадлежит:

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films. 1. Nanocrystals formed by a solvothermal method , said method comprisingdissolving or mixing at least one precursor of said nanocrystals in at least one solvent to produce a solution,heating said solution to a temperature in the range of greater than a temperature of 250° C. to a temperature of 350° C. and a pressure in the range of 100-900 psi to form said nanocrystals,whereinsaid nanocrystals are comprised of at least one of hafnium oxide, zirconium oxide, hafnium-zirconium oxide and titanium-zirconium oxide.2. The nanocrystals of wherein said at least one precursor is selected from the group consisting of at least one of an alkoxide claim 1 , an acetate claim 1 , an acetylacetonate claim 1 , and a halide.3. The nanocrystals of wherein said pressure is in the range of 100-500 psi.4. The nanocrystals of wherein said temperature is in the range of 300-350° C.5. The nanocrystals of wherein said heating comprises heating for 1-2 hours.6. The nanocrystals of wherein said nanocrystals are capped with at least one agent to increase the solubility or dispersibility of said nanocrystals.7. The nanocrystals of wherein said at least one agent comprises at least one organosilane claim 6 , organocarboxylic acid or organoalcohol.8. The nanocrystals of wherein said at least one agent to cap said nanocrystals is included in the solution.9. The nanocrystals of wherein said at least one agent to cap said nanocrystals is contacted with said solution prior claim 8 , during or ...

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25-01-2018 дата публикации

Electro-optical single crystal-element, method for the preparation thereof, and systems employing the same

Номер: US20180024389A1
Автор: Pengdi Han, Welling Yan
Принадлежит: Individual

The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient γ c , e.g., transverse effective linear E-O coefficient γ T c , more than 1100 pm/V and longitudinal effective linear E-O coefficient γ l c up to 527 pm/V, which results in a very low half-wavelength voltage V l π below 200V and V T π below about 87V in a wide number of modulation, communication, laser, and industrial uses.

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24-01-2019 дата публикации

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING SAME

Номер: US20190024257A1
Принадлежит: SHOWA DENKO K.K.

Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate. The present invention pertains to: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method and which is characterized in that the average value of the screw-dislocation densities observed at multiple measurement points in one of the semicircle areas, which correspond respectively to the halves of the substrate, is 80% or less of the average value of screw-dislocation densities observed at multiple measurement points in the other of the semicircle areas; and a process for producing the same. 1. A silicon carbide single crystal substrate cut from a bulk silicon carbide single crystal grown by a physical vapor transport method , wherein an average value of screw dislocation densities observed at a plurality of measurement points in one semicircular region which is one-half of the substrate is not more than 80% of an average value of screw dislocation densities observed at a plurality of measurement points in one semicircular region which is the other one-half of the substrate.2. The silicon carbide single crystal substrate according to claim 1 , wherein the substrate has a main surface having an angle θof more than 0° and not more than 12° claim 1 , the angle θbeing formed by the normal penetrating center point O of the substrate and the [0001] direction; when two semicircular regions bounded by a diameter Rof the substrate are defined claim 1 , the diameter Rbeing perpendicular to ...

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28-01-2016 дата публикации

DISCLOCATION IN SiC SEMICONDUCTOR SUBSTRATE

Номер: US20160027879A1
Принадлежит: Sumitomo Electric Industries Ltd

A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 5 cm −2 . Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.

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23-01-2020 дата публикации

PEDESTAL, SiC SINGLE CRYSTAL MANUFACTURING APPARATUS, AND SiC SINGLE CRYSTAL MANUFACTURING METHOD

Номер: US20200024769A1
Автор: NOGUCHI Shunsuke
Принадлежит: SHOWA DENKO K.K.

A pedestal of the present invention is a pedestal for a seed for crystal growth, in which one main surface to which the seed adheres is flat, and the pedestal has a gas-permeable region which a thickness from the one main surface that is formed to be locally thin. 1. A pedestal supporting a seed for crystal growth , wherein one main surface to which the seed adheres is flat , and wherein the pedestal has a gas-permeable region which a thickness from the one main surface is formed to be locally thin.2. The pedestal according to claim 1 , wherein a thickness of the gas-permeable region is 1 mm or more and less than 5 mm.3. The pedestal according to claim 1 , wherein the thickness of the gas-permeable region increases as a position separates from a center of the gas-permeable region along to one main surface.4. The pedestal according to claim 1 , wherein the region other than the gas-permeable region includes a part having a thickness of 10 mm or more.5. The pedestal according to claim 1 , wherein claim 1 , in plan view from a thickness direction claim 1 , when a distance from the center to an outer circumference is set to r claim 1 , the gas-permeable region is included in the range of the distance r/2 from the center.6. The pedestal according to supporting a seed for crystal growth claim 1 ,wherein the one main surface to which the seed adheres is flat, andwherein the pedestal has a gas-permeable region which is spreading in a depth direction from the one main surface and has a space communicating with the outside and provided on an inner side of the gas-permeable region.7. The pedestal according to claim 6 , wherein the space is formed at a distance of 1 mm or more to less than 5 mm from the one main surface.8. A SiC single crystal manufacturing apparatus claim 6 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the pedestal according to .'}9. A SiC single crystal manufacturing method for manufacturing a SiC single crystal using the pedestal according ...

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28-01-2021 дата публикации

Crystallization of amorphous multicomponent ionic compounds

Номер: US20210025074A1
Принадлежит: WISCONSIN ALUMNI RESEARCH FOUNDATION

A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

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24-04-2014 дата публикации

Unseeded silicon carbide single crystals

Номер: US20140113136A1
Автор: Charles Eric Hunter
Принадлежит: Individual

High volumes of relatively large, single crystals of silicon carbide are grown in a reactor from a point source, i.e., unseeded growth. The crystals may be grown colorless or near colorless and may be processed for many uses, including use as a diamond substitute for jewelry, as an optical element such as a watch face or a lens, or for other desired end uses.

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01-02-2018 дата публикации

CHEMICAL MECHANICAL POLISHING CONDITIONER AND METHOD FOR MANUFACTURING SAME

Номер: US20180029192A1
Принадлежит:

A chemical mechanical polishing (abbreviated as CMP) conditioner comprises a bottom substrate, an intermediate substrate and a diamond film The intermediate substrate is provided on the bottom substrate. The intermediate substrate comprises a hollow portion, an annular portion surrounding the hollow portion, and at least one projecting ring projecting out of the annular portion away from the bottom substrate. The projecting ring comprises a plurality of bumps arranged to be spaced apart from each other along an annulus region. The bumps are extended in a radial direction of the intermediate substrate. The diamond film is provided on the intermediate substrate. The diamond film is allowed for conforming to the bumps, so as to form a plurality of the abrasive projections. 1. A CMP conditioner , comprising:a bottom substrate;an intermediate substrate, provided on said bottom substrate, said intermediate substrate comprising a hollow portion, an annular portion surrounding said hollow portion, and at least one projecting ring projecting out of said annular portion away from said bottom substrate, said projecting ring comprising a plurality of bumps arranged to be spaced apart from each other along an annulus region, said bumps extending in a radial direction of said intermediate substrate; anda diamond film, provided on said intermediate substrate, said diamond film conforming to said bumps, so as to form a plurality of said abrasive projections.2. The CMP conditioner according to claim 1 , wherein said adjacent abrasive projections are spaced apart from each other at an interval claim 1 , said interval being 1 to 5 times with respect to a width of said bump.3. The CMP conditioner according to claim 1 , wherein said projecting ring is presented as an arc with respect to said radial direction of said intermediate substrate.4. The CMP conditioner according to claim 1 , wherein said abrasive projection is provided with a rough top surface.5. The CMP conditioner according ...

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04-02-2016 дата публикации

METHOD FOR MANUFACTURING SIC WAFER FIT FOR INTEGRATION WITH POWER DEVICE MANUFACTURING TECHNOLOGY

Номер: US20160032486A1
Принадлежит:

A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate. 1. A method for manufacturing SiC crystal to a grown volume , comprising:i. introducing a mixture comprising silicon chips into a reaction cell, the reaction cell being made of graphite and having cylindrical interior of internal volume in the range of from six to twelve times the grown volume of the SiC crystal;ii. placing a silicon carbide seed crystal inside the reaction cell adjacent to a lid of the reaction cell;iii. sealing the cylindrical reaction cell using the lid;iv. surrounding the reaction cell with graphite insulation;v. introducing the cylindrical reaction cell into a vacuum furnace;vi. evacuating the vacuum furnace;vii. filling the vacuum furnace with a gas mixture comprising inert gas to a pressure near atmospheric pressure;viii. heating the cylindrical reaction cell in the vacuum furnace to a temperature in the range from 1975° C. to 2500° C.;ix. reducing the pressure in the vacuum furnace to from 0.05 torr to less than 50 torr;{'sup': 2', '2, 'x. introducing source of carbon gas into the vacuum furnace and flowing nitrogen gas configured to introduce nitrogen donor concentration larger than 3E18/cm, and up to 6E18/cm; and,'}xi. allowing for sublimation of silicon and carbon species ...

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04-02-2016 дата публикации

METHOD FOR PRODUCING SINGLE CRYSTAL

Номер: US20160032487A1
Принадлежит:

A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible, and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part, the lid part having a holder that holds the seed crystal. The bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal. 1. A method for producing a single crystal , comprising:a step of placing a source material powder and a seed crystal within a crucible; anda step of growing a single crystal on the seed crystal, a peripheral wall part being hollow and having openings at both ends,', 'a bottom part connected to the peripheral wall part to close one of the openings of the peripheral wall part, and', 'a lid part connected to the peripheral wall part to close the other one of the openings of the peripheral wall part and having a holder that holds the seed crystal,, 'wherein the crucible includes'}the bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal,in the step of placing the source material powder and the seed crystal within the crucible, the source material ...

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04-02-2016 дата публикации

CRYSTALLINE STRONTIUM TITANATE AND METHODS OF FORMING THE SAME

Номер: US20160032489A1
Автор: Blomberg Tom E.
Принадлежит:

Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO. 1. (canceled)2. A method of forming a layer comprising crystalline oxide on a substrate , the method comprising:depositing a layer comprising strontium oxide on the substrate by atomic layer deposition; andsubjecting the strontium oxide layer to a post-deposition anneal (PDA) under conditions selected to produce large crystal grains in the strontium oxide layer, the crystal grains having lateral dimensions exceeding the thickness of the strontium oxide layer by at least a factor of two.3. The method of claim 2 , wherein the crystalline oxide comprises a dopant.4. The method of claim 2 , wherein the strontium oxide is strontium titanate.5. The method of claim 2 , wherein the crystal grains have lateral dimensions exceeding the thickness of the strontium oxide layer by a factor of five.6. The method of claim 2 , wherein the layer comprising strontium oxide is deposited on a substrate comprising an exposed crystal enhancement layer over a wafer.7. The method of claim 6 , wherein the crystal enhancement layer comprises a noble metal layer.8. The method of claim 7 , wherein the crystal enhancement layer comprises a platinum layer.9. The method of claim 2 , wherein the layer comprising strontium oxide is deposited on a substrate comprising a self-assembled monolayer with periodic openings exposing an underlying Pt layer.10. The method of claim 2 , ...

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04-02-2016 дата публикации

Electro-Optical Device, Manufacturing Method for Electro-Optical Device, and Electronic Apparatus

Номер: US20160033760A1
Автор: SUGIMOTO Yohei
Принадлежит: SEIKO EPSON CORPORATION

An electro-optical device includes a substrate, a mirror support pillar extending in a direction in which the pillar intersects with a surface of the substrate, and a mirror that is so disposed as to be distanced from the substrate and to be capable of being displaced with respect to the mirror support pillar. The mirror has a reflective metal film, and a reflection enhancing lamination film that covers a portion including a surface and a side surface of the reflective metal film. 1. An electro-optical device comprising:a substrate;a mirror that includes a reflective metal film and is disposed above one surface of the substrate so as to be distanced from the substrate;a support section that is disposed between the substrate and the mirror, the support section has a portion connected to part of the mirror to support the mirror; anda reflection enhancing lamination film that is disposed so as to cover at least a part of a surface of the mirror on an opposite side to the substrate and a side surface of the mirror.2. The electro-optical device according to claim 1 ,wherein the reflection enhancing lamination film includes a first oxide film and a second oxide film, the second oxide film having a larger refractive index than the first oxide film and disposed on a side of the first oxide film opposite to the reflective metal film.3. The electro-optical device according to claim 2 ,wherein the first oxide film is silicon oxide, andthe second oxide film is silicon nitride.4. The electro-optical device according to claim 1 ,wherein the reflective metal film is made of aluminum.5. The electro-optical device according to claim 1 ,wherein the mirror includes, between the reflective metal film and the substrate, a seed lamination film for aligning crystal plane orientations.6. The electro-optical device according to claim 5 ,wherein the seed lamination film is a lamination film including a titanium nitride layer which is disposed between the reflective metal film and the ...

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