ГРАДИЕНТНЫЙ КОНЦЕНТРАТОР

Изобретение относится к основным элементам электрического оборудования, а именно преобразователям. Градиентный концентратор состоит из проводящих электродов, размещенных на общей подложке. Эти электроды выполнены в виде квазиплоской пары острие - антиострие и разнесены на расстояние, обеспечивающее туннелирование электронов и соизмеримое с радиусом кривизны острия. При этом возможно выполнение двумерной матрицы, состоящей из градиентных концентраторов. В результате получена возможность эффективного выпрямления тока в тяжелых температурных условиях, при малых напряжениях, со снижением приложенного напряжения до ничтожно малых значений. 2 с.п.ф-лы, 2 ил.

TUNNEL CATHODE

... 1,223,729. Electrostatic precipitators. NORTH AMERICAN ROCKWELL CORP. 23 July, 1968 [25 July, 1967], No. 35182/68. Heading B2J. [Also in Divisions C4 and H1] A tunnel cathode, which may be used to replace the Corona brushes used in air particle ionizers in precipitors, comprises a monocrystalline base 21, see Fig. 2, e.g. of W, Mo, Si, Ge, Bi, Au, Ni, Fe, a thin film monocrystalline insulating barrier 22, e.g. of Al 2 O 3 , MgO, SiO, ThO 2 , TiC, BaS, disposed on top of the base, and a monocrystalline semiconductor omitter layer 23 having an electron density lower than that of gold, Si, Ge, ZnS, GaAs, disposed on top of the barrier 22. The cathode is operated with a potential bias applied between the base 21 and the emitter 23. The insulating barrier and emitter layer may be respectively epitaxially disposed on the base which itself may be epitaxially disposed on a monocrystalline insulating substrate 27 e.g. of sapphire, magnesia, beryllia or magnesium aluminate spinel. A monocrystalline ...

Ferroelectric cathodes for crts

A cathode, an electron gun, and a cathode ray tube include a ferroelectric electron source. The cathode includes a substrate; a lower electrode layer on the substrate; a cathode layer, on the lower electrode layer, the cathode layer including a ferroelectric emitter; an upper electrode layer, on the ferroelectric cathode layer, the upper electrode layer having electron emitting regions comprising a plurality of electron emission holes for passing electrons emitted from the ferroelectric emitter; and a driving electrode layer, supported by the upper electrode layer, for controlling passage of electrons through the electron emitting regions in the upper electrode layer and the driving electrode layer.

Display device

Display device

Improvements in or relating to solid state electronic devices, method and apparatus

... 1,044,362. Solid state devices; cold cathodes. GENERAL ELECTRIC CO. March 20, 1963 [March 22, 1962], No. 10998/63. Headings H1D and H1K. A solid state electronic device with a negative resistance characteristic comprises an insulating film 80-1000 Š thick of a silicon or metal compound between two metal layers, the conductivity characteristic being produced by applying an increasing potential across the device in low atmospheric pressure conditions; an intermediate metal layer and second insulating layer may be provided to form a triode. The current through the device is believed to be space charge limited and only a small part is provided by tunnelling. The arrangement may be used to provide a cold cathode device. Fig. 1 shows a diode arrangement consisting of a glass substrate 11 with an aluminium layer 12 (2000 to 4000 A or thicker, e.g. 20 mils.) an aluminium oxide layer 14 (80 to 1000 Š) and a gold layer 13 (40 to 300 Š). The oxide layer may be produced by anodizing treatment of the ...

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN MATRIX AND THEIR MANUFACTURING PROCESSES

PROCEDURE FOR THE ENTERPRISE OF A TUNNEL CATHODE.

USE OF A COLD CATHODE IN GLOW LAMPS, GLOW LAMP WITH THIS COLD CATHODE AND MODE OF OPERATION FOR THIS GLOW LAMP

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

Electron emission device and electron emission display

场致发射型电子源及其制造方法

... 本发明揭示一种场致发射型电子源及其制造方法。场致发射型电子源(10)具有导电性基板(1)、在导电性基板(1)的一个表面上形成的至少一部分进行多孔化处理的半导体层(6)、以及在半导体层上形成的导电性薄膜(7)。通过加上导电性薄膜(7)相对于导电性基板(1)为正的电压，注入导电性基板(1)的电子通过半导体层从导电性薄膜(7)发射。半导体层包含柱状结构部分(21)和平均尺寸在2μm以下的多孔结构部分(25)混合存在的多孔半导体层(6)。 ...

Field Emission-Type Electron Source and manufacturing Method Thereof

그라스기판으로 되는 절연성기판(11)의 한 표면상에 도전성층(8)이 형성되어 있고, 이 도전성층(8)상에는 산화된 다공절 다결정실리콘층으로 되는 강전계 드리프트층(6)이 형성있으며, 강전계 드리프트층(6)상에는 표면전극(7)이 형성되어 있다. A conductive layer 8 is formed on one surface of the insulating substrate 11 to be a glass substrate, and a strong electric field drift layer 6 is formed on the conductive layer 8 to be an oxidized porous polycrystalline silicon layer. The surface electrode 7 is formed on the strong electric field drift layer 6. 도전성층(8)은 절연성 기판(11)상에 형성된 동으로 되는 하측 도전성막(9)과, 이 도전성막(8a)상에 형성된 알루미늄으로 되는 상측 도전성막(8b)으로 구성된다. The conductive layer 8 is composed of a lower conductive film 9 made of copper formed on the insulating substrate 11 and an upper conductive film 8b made of aluminum formed on the conductive film 8a. 강전계 드리프트층(6)은 도전성층(8)상에 다결정 실리콘층은 형성하고, 이 다결정 실리콘층을 다공질화하고, 다시 산화함으로써 형성된다. The strong electric field drift layer 6 is formed by forming a polycrystalline silicon layer on the conductive layer 8, making the polycrystalline silicon layer porous, and oxidizing it again. 상측 도전성층(8b)은 실리콘과 반응하기 쉬운 성질을 가지고 있기 때문에 다결정실리콘층의 형성시에 아모르퍼스층의 형성이 억제된다. Since the upper conductive layer 8b has a property of easily reacting with silicon, the formation of the amorphous layer is suppressed at the time of forming the polycrystalline silicon layer.

Emitter for electron-beam projection lithography system and method of manufacturing thereof

ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME

Dielectric composition and dielectric film element

... [Problems] To provide a dielectric component which remedies the degradation of amount of electron emission of an electron emitter. [Means to Solve the Problems] Provided is a dielectric composition which, when applied to an electron emitter, enables suppression of reduction of electron emission quantity with passage of time. The dielectric composition contains, as a primary component, a PMN-PZ-PT ternary solid solution composition represented by the following formula Pb_xBi_p(Mg_y/3Nb_2/3)_aTi_b-zM_zZr_cO₃ [wherein x, p, and y satisfy the following relations: 0.85<=x<=1.05, 0.02<=p<=0.1, and 0.8<=y<=1.0; a, b, and c are decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200); z satisfies the following relation: 0.02<=z<=0.10; and M is at least one element ...

Silicon-based dielectric tunneling emitter

An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Method of manufacturing an emitter

An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.

Field emission-type electron source and manufacturing method thereof

An electron source (10) is provided with an n-type silicon substrate (1) as a conductive substrate, a drift layer (6) composed of oxidized porous polycrystalline silicon which is formed on the main surface of the silicon substrate (1), and a surface electrode (7) as a conductive thin film formed on the drift layer (6). The process for, forming the surface electrode (7) includes the steps of forming a first layer composed of Cr on the drift layer (6), forming a second layer composed of Au on the first layer, and alloying the two layers. The surface electrode (7) has higher adhesion for the drift layer 6 and/or stability for the lapse of time. In addition, the surface electrode (7) has lower density of states in an energy region near energy of emitted electrons, in comparison with the simple substance of Cr. In the surface electrode (7), scattering of the electrons is less so that electron emitting efficiency is higher.

Electron emitter formed of a dielectric material characterized by having high mechanical quality factor

A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.

ELECTRON EMITTING ELEMENT, ELECTRON EMITTING DEVICE, LIGHT EMITTING DEVICE, IMAGE DISPLAY DEVICE, AIR BLOWING DEVICE, COOLING DEVICE, CHARGING DEVICE, IMAGE FORMING APPARATUS, ELECTRON-BEAM CURING DEVICE, AND METHOD FOR PRODUCING ELECTRON EMITTING ELEMENT

An electron emitting element ( 1 ) includes a substrate ( 2 ), an upper electrode ( 3 ), and a fine particle layer ( 4 ) sandwiched between the substrate ( 2 ) and the upper electrode ( 3 ). The fine particle layer ( 4 ) includes metal fine particles ( 6 ) with high resistance to oxidation, and insulating fine particles ( 5 ) larger in size than the metal fine particles ( 6 ). The electron emitting element ( 1 ) can steadily emit electrons not only in vacuum but also in the atmosphere. Further, the electron emitting element ( 1 ) can work without electric discharge so that harmful substances such as ozone, NOx, or the like are scarcely generated. Accordingly, degradation of the electron emitting element ( 1 ) due to oxidation does not occur. Therefore, the electron emitting element ( 1 ) has a long life and can steadily work continuously for a long period of time even in the atmosphere.

Field emission electron source and production method thereof

In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to ...

EMITTER WITH FILLED ZEOLITE EMISSION LAYER

Electron emission device and display device using the same

Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben

Elektronenstrahllithographiemaschine und Bildwiedergabeapparat

Cold cathode type flat panel display

A cold cathode type flat panel display is disclosed in which a cathode substrate 10 is arranged comprising plural cold cathode type electron sources. A fluorescent screen substrate 100 containing an anode in which a phosphor film is deposited to be opposite the electron sources is provided along with a plurality of spacers 30. The electron sources are connected to a scanning line circuit 60, upper lines, and a signal line circuit 50, lower lines, to supply them with selection signals. Some parts of the scan circuit lines positioned in the upper layer of electrical lines function both as feed lines for the spacers 30 and as scan lines. Both of these functions are provided by a single electrode.

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

PLANAR ELECTRON EMITTER

Vacuum electron tube with planar cathode based on nanotubes or nanowires

ELECTRIC FIELD EMISSION TYPE ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: An electric field emission type electron source and method for manufacturing the same are provided to have high electron emission efficiency and a high thermal stability. CONSTITUTION: The electric field emission type electron source(10) includes a conductive layer(8) formed from tungsten being formed on the surface of an insulation substrate(11) composed of a glass substrate, an n-type polycrystalline silicon layer(9) of a semiconductor crystal layer is formed on the conductive layer(8), a non-doped polycrystalline silicon layer(3) is formed on the n-type polycrystalline silicon layer(9), a strong electric field drift layer(6) composed of oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer(3), and then a surface electrode(7) is formed on the strong electric field drift layer(6). © KIPO & JPO 2002 ...

Image display device and manufacturing method of image display device

COLD CATHODE FOR DISCHARGE LAMPS, DISCHARGE LAMP FITTED WITH SAID COLD CATHODE, AND PRINCIPLE OF OPERATION OF SAID DISCHARGE LAMP

Disclosed is a cold cathode (1) for use in discharge lamps, including in discharge lamps (6) operating with a dielectrically hindered discharge, comprising two electroconducive electrodes facing each other, between which a ferro-electric material is sandwiched. At least one of the electrodes presents one or more openings. When the cathode is operating, a voltage of quickly alternating polarity is applied to both electrodes, thereby freeing electrons on the surface of the ferro-electric material. The working voltage of the discharge lamp causes an acceleration of said electrons, which pass through the openings towards the anode (8) and are used for igniting the discharge lamp and keeping it in operating mode.

FIELD EMISSION SOURCE ARRAY, METHOD FOR PRODUCING THE SAME, AND ITS USE

L'invention concerne une source à émission de champ (10) comprenant: un substrat en silicium du type P (1); une région du type N (8) qui se présente sous la forme de bandes situées sur la surface principale dudit substrat (1); des couches de dérive à champ fort (6) formées sur la région du type N (8), dans laquelle dérivent des électrons injectés depuis cette région du type N (8), ces couches étant fabriquées dans du silicium polycristallin poreux oxydé; une couche de silicium polycristallin (3) formée entre lesdites couches de dérive à champ fort (6); et des électrodes de surface (7) qui se présentent sous la forme de bandes placées dans un sens perpendiculaire aux bandes de la région du type N (8). On applique sélectivement une tension à cette région du type N (8) ou aux électrodes de surface (7) de manière à émettre des électrons depuis des zones prédéterminées de ces électrodes de surface (7).

HOT ELECTRON EMISSION ARRAY FOR E-BEAM PHOTOLITHOGRAPHY AND DISPLAY SCREENS

This invention relates to a device for emitting addressable locations comprises parallel spaced-apart first conductors (10) intersecting with parallel spaced-apart second conductors (11). The intersecting first and second conductors define addressable locations where electrons (12) are emitted in response to the application of an energizing voltage. One face of the first conductors is covered with an insulating layer (13) against which the second conductors (11) are applied, this insulating layer (13) forming a tunnel barrier for hot electrons (12) that travel ballistically through and are emitted from the second conductors (11) in response to the application of the energizing voltage. The emitted electrons impinge a target (30, 40, 50) which can be a light-emitting screen of a flat panel display, such as an electroluminescent polymer of a flat panel screen, or an electroluminescent phosphorous screen, or a target wafer bombarded by the electrons emitted from a flexible e-beam lithography ...

High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission

A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped region below the p region (n+-p-D-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible since under certain voltage drop across the dielectric layer, effective negative electron affinity is realized for the quasi-equilibrium “cold” electrons accumulated in the depletion layer in the p-region next to the dielectric layer. These electrons are generated as a result of the avalanche in the p-D-M structure or injection processes in the n+-p-D-M structure. These emitters are stable since they make use of relatively low extracting field in the vacuum region and are not affected by contamination and absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology ...

Field-enhanced MIS / MIM electron emitters

In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized ...

Gas discharge tube with tunnel effect type cathode

A gas discharge tube using a tunnel effect type electron emitting device as a cathode is provided. The electron emitting device comprises a conductive metal base and a dielectric film formed preferably of a material containing MgO as a main component on the metal base. The dielectric film faces an anode and is exposed to a gas in the tube. In the cathode of this structure, discharge is effected at a relatively low DC voltage.

Electron emission device, electron source, and image display having dipole layer

An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.

ANNEALED TUNNELING EMITTER

An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Field emission display

A display having hot electron type electron sources displaying an image by a line sequential scanning scheme is provided to prevent poor brightness uniformity along scan lines. The hot electron type electron source is provided with a top electrode bus line serving as a scan line and a bottom electrode bus line serving as a data line. The top electrode bus line has a sheet resistance lower than that of the bottom electrode. The wire sheet resistance of the scam line can be reduced to several m/square. When forming a 40 inch large screen FED using the hot electron type electron sources, a voltage drop amount produced in the scan line can be suppressed below an allowable range. As a result, high quality image without poor brightness uniformity can be obtained.

Method and apparatus for modifying object with electrons generated from cold cathode electron emitter

Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.

Electron-emitting device manufacturing method and apparatus, electron-emitting device driving method, and electron-emitting device adjusting method

This invention stabilizes the electron-emitting characteristics of an electron-emitting device. To stabilize the electron-emitting characteristics, a voltage of the same polarity as that of a voltage in normal driving and a voltage of an opposite polarity are applied in a high vacuum.

Image pickup device including electron-emitting devices

Emission device and method for forming

An emission device includes a plurality of electron emitter structures (12) of varied geometry that have a conducting layer (22) deposited thereon. The conducting layer has openings (24) located at tunneling sites (18) for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

Self-recovering current-limiting device with liquid metal

A field emission-type electron source 10 is provided with a conductive substrate 1, a semiconductor layer formed on a surface of the conductive substrate 1, at least a part of the semiconductor layer being made porous, and a conductive thin film 7 formed on the semiconductor layer. Electrons injected into the conductive substrate 1 are emitted from the conductive thin film 7 through the semiconductor layer by applying a voltage between the conductive thin film 7 and the conductive substrate 1 in such a manner that the conductive thin film 7 acts as a positive electrode against the conductive substrate 1. The semiconductor layer includes a porous semiconductor layer 6 in which columnar structures 21 and porous structures 25 composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film 22,24. Further, an average dimension of each of the porous structures 25 in a thickness direction of the semiconductor layer is ...

ПЛАНАРНЫЙ ЭЛЕКТРОННЫЙ ЭМИТТЕР (ПЭЭ)

FIELD: electronics. SUBSTANCE: planar electron emitter comprises body of own semiconductor or dielectric with non-zero forbidden zone. Body of macroscopic thickness ( - 1.0 mm ) is limited by two parallel surfaces. Emitter also has assemblage of two electrodes precipitated/grown on two mentioned free surfaces. With application of weak external electric field (- 100 V/cm ) structure incorporating two electrodes and mentioned semiconductor or dielectric body confined between them greater share of electrons injected into mentioned semiconductor or dielectric body from negatively charged electrode ( cathode ) demonstrates quasi-ballistic properties, that is, this share of injected electrons is accelerated in mentioned semiconductor or dielectric body not experiencing any noticeable energy losses. As result electrons reach positively charged electrode ( anode ) with sufficient energy and corresponding pulse to pass through mentioned anode and get out of above-mentioned structure into vacuum. In this case mentioned semiconductor or dielectric body includes material or complex of materials possessing specified crystallographic orientation. EFFECT: low power dissipation, simplified design of emitter, increased density of electron emission current, capability to operate at room temperature. 50 cl, 24 dwg

COLD-CATHODE AND METHOD OF MANUFACTURING SAME

... 1340353 Cathode materials and processing PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 19 April 1971 [14 March 1970] 23806/71 Heading H1D A cold cathode comprises a first conductive layer 2; an insulating layer with thick and thin regions, the thin regions being not more than 50Ám wide and formed of a compact layer 7 and a thicker porous layer 9; a discontinuous metal layer 12 on the porous layer with some of the metal 11 diffused into the porous layer and a second conductive layer 4 on the thick regions. The metal 11, 12 is gold and the diffused portions form field emission regions. The cathode comprises a glass substrate 1, layers 2, 3, 4, 8 of Al, SiO 2 , Al and Al 2 O 3 and in an etched hole, layers 7, 9, 12 of dense Al 2 O 3 , porous Al 2 O 3 containing needle shaped Au deposits 11 and Au. The cathode is prepared by vapour depositing the Al layer 2 on the substrate, sputtering on a layer of SiO 2 and adding an Al layer. A matrix of holes in layers 3, 4 are etched using a photo-resist ...

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND USE THE SAME

PROCEDURE FOR THE PRODUCTION OF A FIELD MISSION ELECTRON GUN

SURFACE EMISSION ELECTRON GUN AND DESIGN MECHANISM

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

FIELD MISSION ELECTRON GUN, PROCEDURE FOR THEIR PRODUCTION AND INDICATOR WITH SUCH AN ELECTRON GUN

Emission layer formed by rapid thermal formation process

Planar electron emitter (PEE)

Planar electron emitter (pee)

FIELD EMITTING CATHODE WITH PLURAL EMITTERS

ELECTRON-EMITTING DEVICE, AND ELECTRON BEAM LITHOGRAPHY MACHINE AND IMAGE DISPLAY APPARATUS MAKING USE OF IT

An electron-emitting device comprises a substrate, an electrode provided on said substrate, an insulating layer laminated on the electrode, and a second electrode having an opening and laminated on the insulating layer in such a manner that the insulating layer is uncovered at the opening and electrons are emitted from the opening of the second electrode as a result of application of an voltage between the electrodes. An image display apparatus comprises the electron-emitting device, a modulating electrode capable of modulating an electron beam emitted from the electron-emitting device, in accordance with an information signal, and an image forming member capable of forming an image as a result of irradiation with the electron beam, these of which are successively disposed. An image forming apparatus comprises the electron-emitting device, and a means for modulating an electron beam emitted from said electron-emitting device, in accordance with an information signal.

Anodizing process for improving electron emission in electronic devices

Tunnel effect transmitter and its producing method

The electron-emitting device and display

Field emission electron source

Thin-film cold cathode structure and device using this cathode

The cold cathode device according to the present invention comprises a first electrode (2) formed on a substrate (1), an insulating film (3) formed on the first electrode, a thin film (4) formed on the insulating film for generating excited electrons and a second electrode (5) formed on the thin film. The electrons are injected by the second electrode during the first half-wave of each period of an A.C. voltage. The injected electrons form the space charge layer between the insulating film and the thin film. During the second half-wave of each period, the excited electrons are generated from the electrons stored in the space charge layer within the thin film and are emitted by the second electrode.

Emitter with dielectric layer having implanted conducting centers

An emitter (10) has a dielectric layer (12) formed on a conductor (14), with a thin metal layer (16) over the dielectric layer (12). A plurality of conducting centers (28) is in the dielectric (12) layer to allow electrons to pass through the dielectric (12) from the conductor (14) to the thin metal layer (16) via quantum tunneling.

ELECTRON EMISSION ELEMENT, ELECTRON EMISSION DEVICE, CHARGE DEVICE, IMAGE FORMING DEVICE, ELECTRON RADIATION CURING DEVICE, LIGHT-EMITTING DEVICE, IMAGE DISPLAY DEVICE, BLOWER DEVICE, COOLING DEVICE, AND MANUFACTURING METHOD FOR ELECTRON EMISSION ELEMENT

An electron emission element () includes an electrode substrate () and a thin film electrode (), and emits electrons from the thin film electrode () by voltage application across the electrode substrate () and the thin film electrode (). An electron accelerating layer () containing at least insulating fine particles () is provided between the electrode substrate () and the thin film electrode (). The electrode substrate () has a convexoconcave surface. The thin film electrode () has openings () above convex parts of the electrode substrate (). 1. An electron emission element , comprising:an electrode substrate;a thin film electrode; andan electron accelerating layer between the electrode substrate and the thin film electrode, the electron accelerating layer containing at least insulating fine particles,the electron emission element emitting, from the thin film electrode, electrons which are accelerated between the electrode substrate and the thin film electrode by voltage application across the electrode substrate and the thin film electrode,the electrode substrate having a convexoconcave surface on which the electron accelerating layer is provided, andthe thin film electrode having openings above convex parts of the convexoconcave surface of the electrode substrate.2. The electron emission element as set forth in claim 1 , wherein the insulating fine particles are (i) monodisperse insulating fine particles and (ii) aligned in the electron accelerating layer so as to fill the electron accelerating layer.3. The electron emission element as set forth in claim 1 , wherein the insulating fine particles contain at least one of silicon oxide claim 1 , aluminum oxide claim 1 , and titanium oxide.4. The electron emission element as set forth in claim 1 , wherein the insulating fine particles have an average diameter of 5 nm through 1000 nm.5. The electron emission element as set forth in claim 1 , wherein the electron accelerating layer has a thickness of 8 nm through 3000 ...

ELECTRON EMISSION ELEMENT AND METHOD FOR SAME

An electron emitting device () includes a first electrode (), a second electrode (), and a semi-conductive layer () provided between the first electrode () and the second electrode (). The semi-conductive layer () includes a porous alumina layer () having a plurality of pores () and silver () supported in the plurality of pores () of the porous alumina layer (). 1. An electron emitting device comprising a first electrode , a second electrode , and a semi-conductive layer provided between the first electrode and the second electrode , whereinthe semi-conductive layer includes a porous alumina layer having a plurality of pores and silver supported in the plurality of pores of the porous alumina layer.2. The electron emitting device of claim 1 , wherein the first electrode is formed of an aluminum substrate or an aluminum layer claim 1 , and the porous alumina layer is an anodized layer formed at a surface of the aluminum substrate or at a surface of the aluminum layer.3. The electron emitting device of claim 1 , wherein the first electrode is formed of an aluminum substrate containing aluminum in an amount of not less than 99.00 mass % but less than 99.99 mass % claim 1 , and the porous alumina layer is an anodized layer formed at a surface of the aluminum substrate.4. The electron emitting device of claim 3 , wherein aluminum is contained in an amount of 99.98 mass % or less in the aluminum substrate.5. The electron emitting device of claim 1 , wherein the porous alumina layer has a thickness which is not less than 10 nm and not more than 5 μm.6. The electron emitting device of claim 1 , wherein the plurality of pores have an opening having a two-dimensional size which is not less than 50 nm and not more than 3 μm as viewed from a normal direction of a surface thereof.7. The electron emitting device of claim 1 , wherein the plurality of pores of the porous alumina layer have a depth which is not less than 10 nm and not more than 5 μm.8. The electron emitting device ...

ELECTRON EMISSION ELEMENT, ELECTRIFICATION APPARATUS, AND IMAGE FORMING APPARATUS

An electron emission element () includes a first electrode () and a second electrode () which are arranged facing each other, an intermediate layer () that is provided between the first electrode () and the second electrode (), and an insulating layer () that is formed with a thickness d1 on a substrate (). A level difference between the insulating layer () and the first electrode () is smaller than the thickness d1 of the insulating layer (). 1. An electron emission element that applies voltage across a first electrode and a second electrode which are arranged facing each other and emits electrons from the second electrode , the electron emission element comprising:an intermediate layer that is provided between the first electrode and the second electrode; and{'b': '1', 'an insulating layer that is formed with a thickness d on a substrate provided with the first electrode, wherein'}the intermediate layer has conductive fine particles dispersed, and{'b': 2', '1, 'a level difference d between the insulating layer and the first electrode is smaller than the thickness d of the insulating layer.'}2. The electron emission element according to claim 1 , whereinthe insulating layer is provided in a region of the substrate, which is lower than an upper surface of the first electrode.3. The electron emission element according to claim 1 , wherein{'b': 3', '2', '3, 'a film thickness d of the intermediate layer satisfies d<3×d.'}4. The electron emission element according to claim 3 , wherein{'b': 3', '3, 'the film thickness d of the intermediate layer satisfies 0.3 μm Подробнее

Method of manufacturing an emitter

A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.

Electron emitting device and method of producing the same

전자 방출 소자는 적어도, 전자 이송부재(1), 전자 방출부재(3), 및 전자 이송부재(1)와 전자 방출부재(3) 사이에 형성된 전계집중 영역(2)을 포함한다. 예를 들면, 전자 이송부재(1)는 도전층일 수 있고, 전계 집중 영역(2)은 도전층 상에 형성된 절연층으로 형성될 수 있으며, 전자 방출부재(3)는 절연층 상에 제공된 입자들로 형성될 수 있다. 전계 집중 영역(2) 내 전계집중에 기인하여, 전자는 전자 이송부재(1)에서 전자 방출부재(3)로 쉽게 주입된다. The electron emission element includes at least an electron transport member 1, an electron emission member 3, and a field concentration region 2 formed between the electron transport member 1 and the electron emission member 3. For example, the electron transport member 1 may be a conductive layer, the electric field concentration region 2 may be formed of an insulating layer formed on the conductive layer, and the electron emission member 3 may be formed of particles provided on the insulating layer. It can be formed as. Due to the field concentration in the electric field concentration region 2, electrons are easily injected from the electron transport member 1 into the electron emission member 3.

Electron source and image display device using the same

Electric field emission type electron source

在由玻璃基板组成的绝缘性基板11的一个表面上形成导电性层8。在导电性层8上形成由氧化的多孔质多晶硅层组成的强电场漂移层6。在强电场漂移层6上形成表面电极7。导电性层8由形成在绝缘性基板11上的由铜组成的下侧的导电性膜8a和形成在该导电性膜8a上的由铝组成的上侧的导电性膜8b所构成。强电场漂移层6这样形成：在导电性层8上形成多晶硅层，把该多晶硅层进行多孔质化，然后，进行氧化。上侧的导电性膜8b具有易于与硅发生反应的性质，因此，在多晶硅层形成时能够抑制非晶层的形成。

Packing material

(57)【要約】 【課題】 電子放出効率の高い電子放出素子を提供す る。 【解決手段】 金属又は半導体からなる電子供給層、電 子供給層上に形成された絶縁体層及び絶縁体層上に形成 された金属薄膜電極からなり、電子供給層及び金属薄膜 電極間に電界を印加し電子を放出する電子放出素子であ って、絶縁体層の膜厚が５０ｎｍ以上であり、電子供給 層は水素化アモルファスシリコンからなる。

Plasma display panel comprising hollow cathode electron accelerating layer

본 발명은 방전전압을 낮추고, 고휘도 및 고효율의 방전셀을 구현하기 위하여, 오목한 형상의 방전전극 또는 유전체층에 형성된 전자방출증폭층을 구비하거나 유전체층 표면에 형성된 오목부 형상의 전자방출증폭층을 구비하는 플라즈마 디스플레이 패널을 제공한다. The present invention provides an electron emission amplifier layer formed on a concave discharge electrode or dielectric layer or a recessed electron emission amplifier layer formed on the surface of a dielectric layer in order to lower the discharge voltage and implement a discharge cell having high brightness and high efficiency. Provided is a plasma display panel.

Surface electron emission device and display unit having the same

표면전자 방출소자 및 그를 구비한 디스플레이 장치에 관해 개시되어 있다. 개시된 표면전자 방출소자는 순차적으로 적층된 하부전극, 절연층 및 상부전극와, 상기 상부전극 상에 형성된 나노 구조층을 구비하는 것을 특징으로 한다. A surface electron emitting device and a display device having the same are disclosed. The disclosed surface electron emission device is characterized by having a lower electrode, an insulating layer and an upper electrode sequentially stacked, and a nano structure layer formed on the upper electrode.

Display device and a method for preparing the same

본 발명은 그 구조가 간단하고 간단한 제조공정으로 용이하게 제조될 수 있는 디스플레이 장치 및 이의 제조 방법을 제공하는 것을 목적으로 하며, 이 목적을 달성하기 위하여 본 발명은, 소정의 간격을 두고 이격되며 서로 마주보는 제1기판 및 제2기판과, 상기 제1기판 및 상기 제2기판과 함께 발광셀을 한정하는 격벽과, 상기 발광셀 내에 배치되는 애노드전극과, 상기 제1기판 및 상기 제2기판 중 어느 하나의 안쪽 면에 배치되는 도전성 실리콘층과, 적어도 일부가 상기 도전성 실리콘층에 배치되는 산화된 다공성 실리콘층과, 상기 발광셀 내에 배치되는 형광체층과, 상기 발광셀 내에 있는 가스를 포함하는 디스플레이 장치 및 이의 제조 방법을 제공한다. The present invention aims to provide a display device and a method of manufacturing the same in which the structure thereof is simple and can be easily manufactured by a simple manufacturing process. A first substrate and a second substrate facing each other, a partition wall defining a light emitting cell together with the first substrate and the second substrate, an anode electrode disposed in the light emitting cell, and the first substrate and the second substrate. A display comprising a conductive silicon layer disposed on either inner surface, an oxidized porous silicon layer at least partially disposed on the conductive silicon layer, a phosphor layer disposed in the light emitting cell, and a gas in the light emitting cell An apparatus and a method of manufacturing the same are provided.

Electronic device and manufacturing method thereof

Electron-emitting device and manufacturing method thereof

본 발명은 다이아몬드층을 이용한 MIS, pn, pin구조로 순방향 바이어스를 인가하고, 전자를 전자공급층(12)에서 p형의 다이아몬드층(13)에 공급함으로써, 효율적으로 전자선을 방출하는 전자방출소자를 제공하는 것으로써, 전자방출소자의 제조방법으로써, 기상합성법에 의한 연속막상의 다이아몬드층을 형성하고, 에칭에 의해 다이아몬드층을 소정의 두께로 조정한다. 또한, 다이아몬드층(13)표면의 전자친화력상태를 임의로 제어하기 위해, 상기 표면을 진공자외선 조사나 수소 또는 산소 플라즈마에 노출시키는 방법등을 이용한다. The present invention provides an electron-emitting device that efficiently emits an electron beam by applying a forward bias in a MIS, pn, and pin structure using a diamond layer and supplying electrons from the electron supply layer 12 to the p-type diamond layer 13. By providing a, a diamond layer on a continuous film is formed by a vapor phase synthesis method as a method of manufacturing an electron-emitting device, and the diamond layer is adjusted to a predetermined thickness by etching. In addition, in order to arbitrarily control the electron affinity state of the surface of the diamond layer 13, the method of exposing the said surface to vacuum ultraviolet irradiation, hydrogen, or oxygen plasma, etc. is used.

Electron emitting element and display device using the same

(57)【要約】 【課題】 電子放出効率の高い電子放出素子を提供す る。 【解決手段】 金属又は半導体からなる電子供給層、電 子供給層上に形成された絶縁体層及び絶縁体層上に形成 された金属薄膜電極からなり、電子供給層及び金属薄膜 電極間に電界を印加し電子を放出する電子放出素子であ って、絶縁体層の膜厚が５０ｎｍ以上であり、電子供給 層は２．５μｍ以上の膜厚を有する。

Electron emission device, electron source, and image display having dipole layer

本发明涉及具有偶极子层的电子发射器件、电子源和图像显示器，其中，提供一种具有足够的开/关特性而且能够在低电压下有效地发射电子的电子发射器件。电子发射器件包括基片、设置在基片上的阴极电极和栅电极、覆盖阴极电极的表面的绝缘层、以及通过用氢终止绝缘层表面形成的偶极子层。

VACUUM CATHODE ELECTRONIC TUBE BASED ON NANOTUBES OR NANOWIAS

L'invention concerne un tube électronique sous vide comprenant au moins une cathode (C) émissive d'électrons et au moins une anode (A) disposées dans une enceinte à vide (E), la cathode présentant une structure planaire comprenant un substrat (Sb) comprenant un matériau métallique, une pluralité d'éléments nanotube ou nanofil isolés électriquement du substrat, l'axe longitudinal desdits éléments nanotube ou nanofil étant sensiblement parallèle au plan du substrat, et au moins un premier connecteur (CE1) relié électriquement à au moins un éléments nanotube ou nanofil de manière à pouvoir appliquer à l'élément nanofil ou nanotube un premier potentiel électrique (V1). The invention relates to a vacuum electronic tube comprising at least one cathode (C) emitting electrons and at least one anode (A) arranged in a vacuum chamber (E), the cathode having a planar structure comprising a substrate (Sb ) comprising a metallic material, a plurality of nanotube or nanowire elements electrically isolated from the substrate, the longitudinal axis of said nanotube or nanowire elements being substantially parallel to the plane of the substrate, and at least one first connector (CE1) electrically connected to at least a nanotube or nanowire element so as to be able to apply to the nanowire or nanotube element a first electric potential (V1).

Emission device and method for forming

An emission device includes a plurality of electron emitter structures of varied geometry that have a conducting layer deposited thereon. The conducting layer has openings located at tunneling sites for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

THIN FILM COLD CATHODE STRUCTURE AND DEVICE USING THE SAME.

Field emission-type electron source

A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).

Field emission electron source

Electron emitting element, electron emitting device, light emitting device, image display device, air blowing device, cooling device, charging device, image forming apparatus, and electron-beam curing device

The present invention provides an electron emitting element which has good energy efficiency and which is capable of controlling a value of current flowing in an electron acceleration layer and an amount of emitted electrons by adjusting a resistance value of the electron acceleration layer and an amount of generated ballistic electrons. An electron emitting element 1 includes an electron acceleration layer 4 including a fine particle layer containing insulating fine particles. In the electron emitting element 1, Ie=α·R−0.67 where Ie [A/cm2] is electron emission current per unit area during the voltage application and R is element resistance [Ω·cm2] per unit area, the element resistance being obtained by dividing (a) a voltage applied between the electrode substrate 2 and the thin-film electrode 3 during the voltage application by (b) current in element per unit area which current flows between the electrode substrate 2 and the thin-film electrode 3 during the voltage application, and where α is not less than 2.0×10−6, and the electron emission current Ie is not less than 1.0×10−9.

Vacuum electron tube with planar cathode based on nanotubes or nanowires

Vacuum electron tube with planar cathode based on nanotubes or nanowires The invention relates to a vacuum electron tube comprising at least one electron-emitting cathode (C) and at least one anode (A) arranged in a vacuum chamber (E), the cathode having a planar structure comprising a 5 substrate (Sb) comprising a conductive material, a plurality of nanotube or nanowire elements electrically insulated from the substrate, the longitudinal axis of said nanotube or nanowire elements being substantially parallel to the plane of the substrate, and at least one first connector (CE1) electrically linked to at least one nanotube or nanowire element so as to be able to apply 10 a first electrical potential (V1) to the nanowire or nanotube element. (FIG. 7) 4/17 70 CE1 E NT e-y Sb e- Z x IsA C Vo CE1 e- e- e z Is Sb x FIG.7

Emitter and method of making

An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same

An electron emitting device includes at least an electron transporting member ( 1 ), an electron emitting member ( 3 ), and an electric field concentration region ( 2 ) formed between the electron transporting member ( 1 ) and the electron emitting member ( 3 ). For example, the electron transporting member ( 1 ) may be a conductive layer, the electric field concentration region ( 2 ) may be formed of an insulating layer formed on the conductive layer, and the electron emitting member ( 3 ) may be formed of particles provided on the insulating layer. Due to the electric field concentration in the electric field concentration region ( 2 ), electrons are easily injected from the electron transporting member ( 1 ) to the electron emitting member ( 3 ).

Field emission device and its method of fabrication

A field emission device has an improved structure in which electron emission from a cathode is enhanced through external light radiation. The field emission device includes: a light transmitting substrate; a cathode unit arranged on the light transmitting substrate and adapted to emit electrons, the cathode unit including: a first electrode layer of a transparent conductive material arranged on the substrate; a first electron emission layer of a semiconductive polymer organic material arranged on the first electrode layer; a second electron emission layer of a composite of a carbon-based inorganic material and a semiconductive polymer organic material arranged on the first electron emission layer; and a second electrode layer of a conductive material arranged on the second electron emission layer. The field emission device further includes an anode arranged to face the cathode unit.

Field emission source array, method for producing the same, and its use

本发明提供能够使表面电极的所希望的区域发射出电子的场发射型电子源及其制造方法,场发射型电子源10具备作为导电性基板的p型硅基板1、形成于p型硅基板1内的主表面侧的带状的作为扩散层的n型区域8、形成于n型区域8上,从n型区域注入的电子发生漂移的、氧化的多孔多晶硅构成的强电场漂移层6、形成于强电场漂移层6之间的多晶硅层3,以及在与n型区域8交叉的方向上形成带状,跨越强电场漂移层6上面及多晶硅层3上面形成的导电性薄膜构成的表面电极7。适当选择施加电压的n型区域8和表面电极7,能够使得施加电压的表面电极7中只有与施加电压的n型区域8交叉的区域发射出电子,所以能够使表面电极7的所希望的区域发射出电子。

Hot electron emission array for e-beam photolithography and display screens

This invention relates to a device for emitting addressable locations comprises parallel spaced-apart first conductors (10) intersecting with parallel spaced-apart second conductors (11). The intersecting first and second conductors define addressable locations where electrons (12) are emitted in response to the application of an energizing voltage. One face of the first conductors is covered with an insulating layer (13) against which the second conductors (11) are applied, this insulating layer (13) forming a tunnel barrier for hot electrons (12) that travel ballistically through and are emitted from the second conductors (11) in response to the application of the energizing voltage. The emitted electrons impinge a target (30, 40, 50) which can be a light-emitting screen of a flat panel display, such as an electroluminescent polymer of a flat panel screen, or an electroluminescent phosphorous screen, or a target wafer bombarded by the electrons emitted from a flexible e-beam lithography mask. The intersecting conductors (10, 11) can be Al wires, or can be produced by C-MOS technology.

Electron emitting element

An electron emitting element (10A) is provided with an emitter part (12) composed of a dielectric material, and an upper electrode (14) and a lower electrode (16) whereupon a driving voltage (Va) is applied for electron emission. The upper electrode (14) is formed on an upper plane of the emitter part (12), and the lower electrode (16) is formed on a lower plane of the emitter part (12). The upper electrode (14) is provided with a plurality of penetrating parts (20) from which the emitter part (12) is exposed. In the upper electrode (14), a plane facing the emitter part (12) at a circumference part (26) of the penetrating part (20) is separated from the emitter part (12).

Emitter with dielectric layer having implanted conducting centers

An emitter has a dielectric layer formed on a conductor, with a thin metal layer over the dielectric. A plurality of conducting centers is in the dielectric layer to allow electrons to pass through the dielectric from the conductor to the thin metal layer via quantum tunneling.

Planar electron emitter (pee)

A planar electron emitter, based on the existence of quasi-ballistic transpo rt of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness ( 1mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field ( 100V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature , that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

Electron source device and display

一种电子源装置，包含由绝缘体构成、具有配置在与主面垂直方向的多个微细孔的多孔层(例如，多孔氧化铝层)；以及配置在该多孔层的两侧的第1和第2导电层，将第2导电层作为阳极、在和第1导电层之间加上直流电压时的电流密度I/S在1μA/cm 2 以上。式中，S表示第1导电层和第2导电层以及多孔层的重叠部分的面积。由于可以获得一种高电子发射能力、廉价且即使在低真空度下也具有长寿命的电子源装置，因此能实现高发光效率、高可靠性的显示装置。

Display apparatus

디스플레이 장치를 개시한다. 본 발명은 제 1 기판과, 제 1 기판과 대향되게 배치된 제 2 기판과, 제 1 기판과 제 2 기판내에 배치된 방전 전극들과, 방전 전극들상에 형성되어서, 이들에 인가되는 방전 전압에 의하여 발생되는 전계에 의하여 전자빔을 방전 셀로 방출시키는 전계 방출 소자와, 방전 셀내에 도포된 발광체층과, 방전 셀내에 채워진 방전 가스;를 포함하는 것으로서, 유지 방전 전극쌍위에 전도성 입자를 분산시킨 전계 방출 소자를 형성함으로써, 유지 방전 전압이 인가시에 발생되는 전계에 의하여 방전 공간에 전자를 효율적으로 공급하게 되어서, 방전 전압을 낮출 수가 있고, 발광 효율을 향상시킬 수가 있다. Disclosed is a display device. The present invention is formed on a first substrate, a second substrate disposed to face the first substrate, discharge electrodes disposed in the first substrate and the second substrate, and discharge voltages applied to them. An electric field in which conductive particles are dispersed on a pair of sustain discharge electrodes, comprising a field emission device for emitting an electron beam to a discharge cell by an electric field generated by the discharge cell, a light emitting layer coated in the discharge cell, and a discharge gas filled in the discharge cell; By forming the emission element, electrons are efficiently supplied to the discharge space by the electric field generated when the sustain discharge voltage is applied, so that the discharge voltage can be lowered and the luminous efficiency can be improved.

Emission layer formed by rapid thermal formation process

An emitter has a rapid thermal process (RTP) formed emission layer of SiO 2 , SiO x N y or combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.

A thin film type electron emitting device having a multilayered upper electrode for suppressing deterioration of an insulating layer and an application

절연층의 열화를 억제하는 다층 상부전극을 갖는 박막형 전자방출장치 및 이것을 사용한 응용기기에 관한 것으로서, 전자방출원 모듈에서 기본적인 적층으로 사용할 수 있는 새롭고 또한 개량된 다층구조를 제공하고 절연층의 열화를 억제 또는 제거할 수 있는 개량된 박막형 전자방출장치 및 이것을 사용한 전자응용기기를 제공하기 위해서, 상부전극 및 하부전극과 그들 사이에 끼인 절연층을 구비하는 다층 박막형 구조를 포함하며, 상부전극 및 하부전극이 상부전극에 대한 극성의 전압을 수신해서 상부전극의 표면으로부터 진공중으로 전자를 방출시키고, 상부전극이 절연층상에 형성된 제1 층과 제1 층상에 적층된 제2 층으로 이루어진 2층 구조를 갖고, 제1 층이 제2 층보다 승화엔탈피가 높은 선택된 재료로 이루어지는 구성으로 하였다. The present invention relates to a thin film type electron emitting device having a multilayered upper electrode for suppressing deterioration of an insulating layer and an application device using the thin film type electron emitting device. Type thin film type electron emitting device capable of suppressing or eliminating an electric field and an electronic application device using the thin film type electron emitting device and an upper electrode and a lower electrode and an insulating layer sandwiched therebetween, Layer structure composed of a first layer on which an upper electrode is formed on an insulating layer and a second layer which is laminated on the first layer, , And the first layer is made of a selected material having a higher sublimation enthalpy than the second layer. 이러한 구성에 의해서, 장시간 동작시켜도 열화가 발생하지 않고 높은 방출전류밀도를 안정하게 얻을 수 있는 박막형 전자방출기를 실현할 수 있고, 또 이 박막형 전자방출기를 사용하여 표시장치나 EB묘화장치를 구성하는 것에 의해 장수명이고 또한 고휘도의 화상표시장치나 고속의 EB 묘화장치를 실현할 수 있다는 효과가 얻어진다. With such a configuration, it is possible to realize a thin film type electron emitter which can stably obtain a high emission current density without causing deterioration even when it is operated for a long period of time. By using the thin film type electron emitter to constitute a display device or an EB imaging device It is possible to realize an image display apparatus of high luminance and a high-speed EB drawing apparatus with a long life.

High emission low voltage electron emitter

An electron emitter has an emitter made of a dielectric material, and an upper electrode and a lower electrode to which a drive voltage is applied to emit electrons. The upper electrode is formed on a first surface of the substance serving as the emitter, and the lower electrode is formed on a second surface of the substance serving as the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. The upper electrode has a surface which faces the emitter in peripheral portions of the through regions and which is spaced from the emitter.

Field emission device and manufacturing method thereof

본 발명은 전계방출소자 및 그의 제조방법에 관한 것으로, 특히 MIM(Metal Insulating Metal) 캐소드의 터널 산화막 절연 파괴로 발생하는 점결함이 선결함으로 나타나는 것을 방지하도록 하는데 적당하도록 한 전계방출소자 및 그의 제조방법에 관한 것이다. 종래 전계방출소자는 상부 데이터 전극과 연결되는 최상부 전극이 얇은 터널 산화막을 절연체로 하여 하부 전극 상부에 위치하므로 터널 산화막의 절연이 파괴되면 상부 전극과 하부 전극이 단락되어 하부 전극의 전류가 누설되기 때문에 해당 하부 전극과 연결된 소자들이 모두 동작하지 못해 시각적으로 결함이 뚜렷하게 나타나는 문제점이 있었다. 이와 같은 문제점을 감안한 본 발명은 기판 상에 형성된 하부 전극 및 하부 전극 일부에 형성된 양극 산화막과; 상기 하부 전극의 상부 일부에 형성된 터널 산화막과; 상기 터널 산화막 상부에 개구부를 형성하며 상기 구조물 상부에 형성된 이중 절연막과; 상기 이중 절연막 상부에 위치하며 돌출된 일부 영역만이 개구부 내부에 노출된 상부 데이터 전극과; 상기 구조물 상부에 형성되며 상기 데이터 전극과는 개구부 내부에 노출된 부분에서만 연결되는 최상부 전극을 포함하는 전계방출소자와 이를 제조하는 방법을 제공함으로써 절연파괴에 의한 단락시 상기 돌출부가 끊어지게 되어 절연 파괴 소자가 인접하는 정상 소자에 영향을 미치지 않도록 하는 효과가 있다. BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a field emission device and a method for manufacturing the same, and more particularly, to a field emission device and a method for manufacturing the field emission device suitable for preventing the occurrence of point defects caused by tunnel oxide dielectric breakdown of a metal insulating metal (MIM) cathode. It is about. In the conventional field emission device, since the uppermost electrode connected to the upper data electrode is positioned above the lower electrode using a thin tunnel oxide as an insulator, when the insulation of the tunnel oxide is destroyed, the upper electrode and the lower electrode are short-circuited and the current of the lower electrode is leaked. All of the devices connected to the lower electrode did not operate and there was a problem that the defects were clearly visible. The present invention in view of the above problems and the lower electrode formed on the substrate and the anode oxide film formed on a portion of the lower electrode; A tunnel oxide film formed on an upper portion of the lower electrode; A double insulating layer formed on the structure and forming an opening in an upper portion of the tunnel oxide layer; An upper data electrode positioned over ...

Electronic device and method for manufacturing same

The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

Electron emission device

Field emission-type electron source and manufacturing method thereof and display using the electron source

A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.

Display device and method of manufacture thereof

一种图像显示装置，包括具有顺序层积下部电极、绝缘层和上部电极构造的多个电子源元件(301)，以及对列方向的电子源元件(301)的上部电极施加驱动电压的多个列电极(311)，其中，电子源元件(301)的其下部电极和上部电极的至少一个通过电阻元件(305)连接到行电极(310)或列电极(311)。

Method and apparatus for modifying object with electrons generated from cold cathode electron emitter

Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes. It is preferred that an energy of the emitted electrons is selected from a range of 1 eV to 50 keV, and preferably 1 eV to 100 eV.

Vacuum electron tube with a planar cathode based on nanotubes or nanowires

本发明公开了一种具有基于纳米管或纳米线的平面阴极的真空电子管。本发明涉及一种真空电子管，其包括布置在真空室(E)中的至少一个电子发射阴极(C)和至少一个阳极(A)，所述阴极具有平面结构，所述平面结构包括基底(Sb)、多个纳米管或纳米线元件以及至少一个第一连接器(CE1)，所述基底包括导电材料，所述纳米管或纳米线元件与基底电绝缘，所述纳米管或纳米线元件的纵向轴线实质上平行于基底的平面，所述第一连接器电性联接至至少一个纳米管或纳米线元件，从而能够向纳米线或纳米管元件施加第一电势(V1)。

Electron emitting device, electron source, image display device, and television

Planar electron emitter (PEE)

A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness ( SIMILAR 1mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field ( SIMILAR 100V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

Electron emitter

An electron emitter (10A) has an emitter (12) made of a dielectric material, and an upper electrode (14) and a lower electrode (16) to which a drive voltage (Va) is applied to emit electrons. The upper electrode (14) is formed on a first surface of the emitter (12), and the lower electrode (16) is formed on a second surface of the emitter (12). The upper electrode (14) has a plurality of through regions (20) through which the emitter (12) is exposed. The upper electrode (14) has a surface which faces the emitter (12) in peripheral portions (26) of the through regions (20) and which is spaced from the emitter (12).

Plasma display panel and flat lamp using oxidized porous silicon

本发明提供了一种等离子体显示板(PDP)和一种平面灯以及制造其的方法。所述等离子体显示板包括：彼此面对的下面板和上面板；多个寻址电极，其形成于所述下面板中；多个维持电极，其形成于所述上面板中；以及，多个被氧化的多孔硅层，其形成于所述上面板上并对应于所述维持电极。

Electric field emission type electron source

전계 방사형 전자원(10)에 있어서는 글라스로 되어 있는 절연성기판(11)의 상측에 도전성층으로 되어 있는 하부전극(8)과 산화 또는 질화된 다공질 반도체로 되어 있는 드리프트부(6a)를 포함하는 강전계 드리프트층(6)과, 금박막으로 되어 있는 표면전극(7)이 설치되어 있다. 그리고 표면전극(7)은 하부전극(8)에 대하여 양극으로 되도록 전압이 인가되고 하부전극(8)으로부터 강전계 드리프트층(6)으로 주입된 전자가, 강전계 드리프트층(6)을 드리프트하여, 표면전극(7)을 통하여 외부로 방출된다. 하부전극(8)과 강전계 드리프트층(6)과의 사이에 n층(21)과 p층(22)으로 되는 pn 접합 반도체층이 설치되고, 이것에 의해 하부전극(8)으로부터 표면전극(7)으로 누설전류가 흐르는 것이 방지되어 전력 소비량이 저감된다. In the field emission-type electron source 10, a strong electric field including a lower electrode 8, which is a conductive layer, and a drift portion 6a, which is an oxidized or nitrided porous semiconductor, above the insulating substrate 11 made of glass. The system drift layer 6 and the surface electrode 7 which consists of a gold thin film are provided. The surface electrode 7 has a voltage applied to the lower electrode 8 to become an anode, and electrons injected from the lower electrode 8 into the strong field drift layer 6 drift the strong field drift layer 6. It is emitted to the outside through the surface electrode (7). Between the lower electrode 8 and the strong electric field drift layer 6, a pn junction semiconductor layer consisting of the n layer 21 and the p layer 22 is provided, whereby the surface electrode (from the lower electrode 8) is formed. 7) leakage current is prevented from flowing and power consumption is reduced.

Electron emission device and display device using the same

An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer (12) of metal or semiconductor, an insulator layer (13) formed on the electron supply layer, and a thin-film metal electrode (15) formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field (Vd) is applied between the electron supply layer (12) and the thin-film metal electrode (15), the electron emission device emits electrons. The invention further comprises an electron emission display device.

Dielectric emitter with PN junction

A method for emitting electrons includes the steps of applying a voltage to an electron source (12) to cause hot electrons to be generated with the source (12), and applying an electric field to cause at least a portion of the hot electrons to be emitted from the electron source (12).

Mask for corpuscular lithography, method for its manufacture and of using it

Integrated focusing emitter

A method for creating an electron lens (28) includes the steps of applying a polymer layer (12) on an emitter surface (36) of an electron emitter (60) and then curing the polymer layer (12) to reduce volatile content.

Field emission-type electron source

A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).

Silicon-based dielectric tunneling emitter

An emitter (50, 100) has an electron supply layer (10) and a silicon-based dielectric layer (20) formed on the electron supply layer (10). The silicon-based dielectric layer (20) is preferably less than about 500 Angstroms. Optionally, an insulator layer (78) is formed on the electron supply layer (10) and has openings defined within in which the silicon-based dielectric layer (20) is formed. A cathode layer (14) is formed on the silicon-based dielectric layer (20) to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter (50,100) is subjected to an annealing process (120,122) thereby increasing the supply of electrons (16) tunneled from the electron supply layer (10) to the cathode layer (14).

Element and method for discharging electron

An electronic discharging element provided with a conductive layer (11) formed on one surface of a dielectric substrate (10) and a dielectric layer (12) and a conductive layer (13) successively formed on the other surface of the substrate (10) in this order, with the dielectric layer (12) having a thickness of ≤ 5 nm and a permittivity which is lower than that of the substrate (10). A method by which electrons are discharged from the surface of the conductive layer (13) by applying a voltage across the conductive layers (11 and 13) of the electron discharging element having the conductive layer (11) formed on one surface of the dielectric substrate (10) and the dielectric layer (12) and conductive layer (13) successively formed on the other surface of the substrate (10), with the dielectric layer (12) having a thickness of ≤ 5 nm and a permittivity lower than that of the substrate (10), so that the layers (11 and 13) can become a cathode and an anode, respectively. Therefore, the electronic discharging element which discharges electrons by utilizing a tunnel effect and has such a new structure that hardly cause dielectric breakdown even when the voltage is applied, and the electron discharging method by which electrons can be discharged by using the element, can be obtained.

Device for generating X-rays and use of such a device

Device for generating X-rays, comprising: a field emission cathode ( 10 ) configured to emit electrons when an electrical field is applied to the cathode ( 10 ); and an anode ( 20 ), the anode being configured to generate X-rays as a result of receiving electrons from the field emission cathode ( 10 ); wherein the cathode ( 10 ) comprises an electron emission surface (S) extending opposite the anode ( 20 ), the cathode ( 10 ) being configured to emit electrons substantially from the electron emission surface (S) during use.

Electron emission device and electron emission display

An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked with each other, the first electrode includes a carbon nanotube layer, a number of holes defines in the semiconductor layer, and a portion of the carbon nanotube layer suspended on the number of holes.

Method for manufacturing electron source

本發明的電子源之製造方法，包含：準備步驟、添加步驟、陽極氧化處理步驟、絕緣膜形成步驟、以及第2電極形成步驟。該準備步驟，準備第1電極與覆蓋該第1電極之p形多結晶半導體層。該添加步驟，於該p形多結晶半導體層之既定區域添加價電子數較該p形多結晶半導體層之構成元素少1個之雜質原子。該陽極氧化處理步驟，藉由將該既定區域陽極氧化處理，在該既定區域中相鄰之晶粒間，形成於該p形多結晶半導體層的厚度方向排列之半導體微結晶。該絕緣膜形成步驟，在該半導體微結晶的表面形成絕緣膜。該第2電極形成步驟，在該既定區域上形成第2電極。

Tunneling emitter

An emitter (50,100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Image display device and method of manufacturing image display device

Dielectric emitter with PN junction

A method for emitting electrons includes the steps of applying a voltage to an electron source to cause hot electrons to be generated with the source, and applying an electric field to cause at least a portion of the hot electrons to be emitted from the electron source.

Electron source apparatus

An electron source apparatus includes a plurality of electron emission portions arranged in a matrix on a Si substrate, and a plurality of emitter lines and a plurality of gate lines that are orthogonal to each other, and each of the plurality of electron emission portions being controlled by signals from the plurality of emitter lines and the plurality of gate lines to perform an independent electron emission operation. Furthermore, device isolation regions are provided surrounding the respective plurality of emitter lines, contact holes are formed in the respective plurality of emitter lines, a plurality of emitter line mounting electrodes that correspond to the respective plurality of emitter lines are provided in a region outside regions that are surrounded by the device isolation regions, and conductors that are connected to the respective plurality of emitter line mounting electrodes are connected via the contact holes to the respective plurality of emitter lines corresponding to the respective plurality of emitter line mounting electrodes. Accordingly, the electron source apparatus can achieve high density and size reduction.

Electron emission element and display device using the same

(57)【要約】 【課題】 電子放出効率の高い電子放出素子を提供す る。 【解決手段】 金属又は半導体からなる電子供給層、電 子供給層上に形成された絶縁体層及び絶縁体層上に形成 され真空空間に面する金属薄膜電極からなり、電子供給 層及び金属薄膜電極間に電界を印加し電子を放出する電 子放出素子であって、絶縁体層は平均の粒径が５〜100n mのアモルファス相を主成分とし多結晶相を含むアモル ファス誘電体からなり、５０nm以上の膜厚を有する。

Electron emitting element, electron emitting device, light emitting device, image display device, air blowing device, cooling device, charging device, image forming apparatus, and electron-beam curing device

The present invention provides an electron emitting element which has good energy efficiency and which is capable of controlling a value of current flowing in an electron acceleration layer and an amount of emitted electrons by adjusting a resistance value of the electron acceleration layer and an amount of generated ballistic electrons. An electron emitting element 1 includes an electron acceleration layer 4 including a fine particle layer containing insulating fine particles. In the electron emitting element 1, Ie=α·R −0.67 where Ie [A/cm 2 ] is electron emission current per unit area during the voltage application and R is element resistance [Ω·cm 2 ] per unit area, the element resistance being obtained by dividing (a) a voltage applied between the electrode substrate 2 and the thin-film electrode 3 during the voltage application by (b) current in element per unit area which current flows between the electrode substrate 2 and the thin-film electrode 3 during the voltage application, and where α is not less than 2.0×10 −6 , and the electron emission current Ie is not less than 1.0×10 −9 .

Cathode, electron gun, and cathode-ray tube using ferroelectric emitter

FIELD: electronic engineering. SUBSTANCE: electron gun has substrate, electrode lower layer formed on substrate, cathode layer formed on lower layer of electrode using ferroelectric emitter, upper layer of electrode formed on ferroelectric layer of cathode that has regions capable of emitting electrons from this surface, and electrode exciting layer formed on upper layer of substrate and designed to control electron emission from electron emission region of electrode upper layer. EFFECT: reduced cost and facilitated manufacture of cathode. 9 cl, 10 dwg

Electron emission device and display device using the same

Mehtod and apparatus for modifying object with electrons generated from cold cathode electron emitter

Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes. It is preferred that an energy of the emitted electrons is selected from a range of 1 eV to 50 keV, and preferably 1 eV to 100 eV.

Surface emission type electron source and drawing device

A surface emission type electron source according to the present invention includes a first electrode having a planar form; a second electrode having a planar form facing the first electrode; an electron passage layer disposed between the first electrode and the second electrode; and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. The quantum wires are made of silicon, and each of the quantum wires has plural thin parts having small thicknesses formed at predetermined intervals along the first direction.

Surface emission type electron source and drawing device

본 발명의 면 방출형 전자원은, 평면 형상의 제1 전극과, 제1 전극에 대향하여 마련된 평면 형상의 제2 전극과, 제1 전극과 제2 전극 사이에 마련된 전자 통과층과, 제2 전극 및 제1 전극에 전압을 인가하는 전원부를 갖는다. 전자 통과층은, 제1 전극으로부터 제2 전극을 향하는 제1 방향으로 연장되는 양자 세선이 소정의 간격을 두고 복수로 마련되어 있으며, 제2 전극의 표면에서 전자가 방출된다. 양자 세선은 실리콘으로 구성되어 있다. The surface-emitting type electron source of the present invention includes a planar first electrode, a planar second electrode provided to face the first electrode, an electron passing layer provided between the first electrode and the second electrode, and a second And a power supply unit for applying a voltage to the electrode and the first electrode. The electron passing layer has a plurality of quantum thin lines extending in a first direction from the first electrode toward the second electrode at predetermined intervals, and electrons are emitted from the surface of the second electrode. Quantum thin wires are composed of silicon.

Electron emitting device, electron source, and image forming apparatus

전자 방출 소자는 기판 상에 배치된 제1 전극, 제1 전극 상에 배치된 절연층, 및 절연층 상에 배치된 제2 전극을 포함한다. 제2 전극은 제1 표면 및 제2 표면을 가지며, 이 표면들은 제1 전극과 절연층이 적층되어 있는 방향과 거의 수직이다. 제2 전극의 제1 표면은 절연층과 접촉한다. 제2 전극에 인가된 것보다 높은 전위가 제1 전극에 인가되어 제2 표면으로부터 전자를 방출한다. The electron emitting device includes a first electrode disposed on the substrate, an insulating layer disposed on the first electrode, and a second electrode disposed on the insulating layer. The second electrode has a first surface and a second surface, which surfaces are substantially perpendicular to the direction in which the first electrode and the insulating layer are stacked. The first surface of the second electrode is in contact with the insulating layer. A potential higher than that applied to the second electrode is applied to the first electrode to emit electrons from the second surface.

Light source

A light source (10D) has a rear glass substrate (200) and a front glass substrate (202) having a plate surface disposed in facing relation to a principal surface of the rear glass substrate (200). The plate surface of the front glass substrate (202) is coated with a phosphor. A two-dimensional array of electron emitters (12B) is disposed on the principal surface of the rear glass substrate (200). A space (230) defined between the rear glass substrate (200) and the front glass substrate (202) is filled with a gas (232). The gas (232) may be an Hg (mercury) gas or an Xe (xenon) gas.

Electron emission device and display device using the same

Electron emitter and method of fabricating electron emitter

An electron emitter includes an emitter layer formed of a dielectric material, an upper electrode, and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode, for emitting electrons. The upper electrode is formed of scale-like conductive particles on the upper surface of the emitter layer and has a plurality of opening portions. The surfaces of overhanging portions of the opening portions that face the emitter layer are apart from the emitter layer. The overhanging portions each have such a cross-sectional shape as to be acutely pointed toward the inner edge of the opening portion, or the tip end of the overhanging portion, so that lines of electric force concentrate at the inner edge.

Emitter and method of making

An emitter (50,100) includes an electron supply (60) and a tunneling layer (20) disposed on the electron supply. A cathode layer (14) is disposed on the tunneling layer. A conductive electrode (53) has multiple layers of conductive material (52,54). The multiple layers include a protective layer (54) disposed on the cathode layer. The conductive electrode has been etched to define an opening (26) thereby exposing a portion of the cathode layer.

Emitter provided with dielectric layer having injected conductivity central region

【課題】　本発明の目的は、注入された導電性中央領域を有し、量子トンネル現象によって電子が通過することを容易にする電子放出器を提供することである。 【解決手段】放出器(10)は、導電体(14)上に形成された誘電体層(12)を有し、前記誘電体層(12)上に薄い金属層(16)を有する。複数の導電性中央領域(28)は、誘電体層(12)内にあり、電子が量子トンネル現象によって、導電体(14)から薄い金属層(16)へ誘電体層(12)を通過することを可能にする。 【選択図】図１

Electron emitting device and light emitting device

Mim emitter of field emission device and manufacturing method thereof

본 발명은 전계 방출 소자의 MIM(Metal/Insulator/Metal) 에미터의 절연막을 구성하는 원소를 포함하는 전구체들간의 표면화학반응을 이용하여 절연막을 형성하는 전계 방출 소자 MIM 에미터 및 그 제조방법에 관한 것이다. The present invention relates to a field emission device MIM emitter for forming an insulating film by using a surface chemical reaction between the precursors containing the elements constituting the insulating film of the metal / emitter / metal (MIM) emitter of the field emission device and a method of manufacturing the same It is about. 이를 위해서, 본 발명은 기판 상에 제 1 전극을 형성하는 단계, 트리메틸알루미늄 및 물을 포함하는 전구체들 간의 표면화학반응을 통하여 알루미늄옥사이드로 절연막을 형성하는 단계, 및 절연막 상에 제 2 전극을 형성하는 단계를 포함하는 방출 소자의 MIM 에미터 및 그 제조방법을 제시한다. To this end, the present invention comprises the steps of forming a first electrode on a substrate, forming an insulating film with aluminum oxide through a surface chemical reaction between precursors including trimethylaluminum and water, and forming a second electrode on the insulating film Provided is a MIM emitter of an emitting device comprising the steps of and a method of manufacturing the same. 이와 같은 구성을 통해서, 간단한 공정방법으로 특성이 우수한 에미터를 제조할 수 있고, 다양한 종류의 도전성 물질을 제 1 전극에 채용할 수 있으며, 제 1 전극과 절연막 사이의 계면 특성도 향상시킬 수 있는 효과가 있다. Through such a configuration, an emitter having excellent characteristics can be manufactured by a simple process method, various kinds of conductive materials can be employed in the first electrode, and the interface characteristics between the first electrode and the insulating film can be improved. It works.

Electron-emitting device, electron-emitting device, self-luminous device, image display device, air blower, cooling device, charging device, image forming device, electron beam curing device, and method for manufacturing electron-emitting device

Electron emission device and display device using the same

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has at a film thickness of 50 nm or greater and a field-stabilizing layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

ELECTRON SOURCE STRUCTURE AND APPLICATION TO ELECTROMAGNETIC WAVE EMISSION TUBES

Electron-emitting device and electron beam lithograph machine and image display apparatus making use of it

An electron-emitting device comprises a substrate, an electrode provided on said substrate, an insulating layer laminated on the electrode, and a second electrode having an opening and laminated on the insulating layer in such a manner that the insulating layer is uncovered at the opening and electrons are emitted from the opening of the second electrode as a result of application of an voltage between the electrodes. An image display apparatus comprises the electron-emitting device, a modulating electrode capable of modulating an electron beam emitted from the electron-emitting device, in accordance with an information signal, and an image forming member capable of forming an image as a result of irradiation with the electron beam, these of which are successively disposed. An image forming apparatus comprises the electron-emitting device, and a means for modulating an electron beam emitted from said electron-emitting device, in accordance with an information signal.

The matrix structure of metal-insulator-metal field emission display

본 발명은 전계 방출 표시 소자의 매트릭스 구조에 관한 것으로, 특히 MIM 전계 방출 표시 소자의 액티브형 매트릭스를 구현하여 화면 전체의 밝기를 균일하게 하고, 누화(Cross talk)를 줄일 수 있는 MIM FED의 매트릭스 구조에 관한 것이다. 종래 MIM FED의 매트릭스 구조는 단순 패시브 매트릭스 구조를 가짐으로써, 화면이 대면적화 되면서 그 스캔전극의 길이와 저항이 증가하고, 그로 인해 전압의 저하가 크게 발생하여 화면의 좌우측 밝기 차이가 생기는 문제점과 표시 장치 구동 시 선택된 셀 뿐만 아니라 선택되지 않을 셀에도 전류가 흐르게 되어 누화(Cross talk)를 발생시키는 문제점이 있었다. 이와 같은 문제점을 감안한 본 발명은 데이터 라인과 스캔 라인에 이격되어 위치하고, 외부에서 인가된 소정의 전압(Vdd)에 의해 구동하는 다수의 MIM셀과, N번째 스캔 라인의 동작에 의해 N번째 데이터 라인에 인가되는 데이터를 출력하고, 그 출력한 데이터의 전위와 (N+1)번째 스캔 라인에 인가된 전위 차이에 의해 상기 MIM셀로 인가되는 소정의 전압(Vdd) 출력을 제어하는 다수의 셀 구동부를 포함하여 구성함으로써, 셀 혹은 스캔 라인에 흐르는 전체적인 전류를 저감하고, 스캔전극의 저항에 의해 전압이 저하되는 것을 방지하여 화면의 밝기를 향상시킴과 아울러 그 밝기의 균일성을 확보하는 효과가 있다. 또한, 셀간의 누설 전류를 방지하여 누화(Cross talk)를 줄일 수 있는 효과가 있다. The present invention relates to a matrix structure of a field emission display device, and more particularly, to implement an active matrix of the MIM field emission display device to uniformize brightness of the entire screen and reduce cross talk. It is about. Since the matrix structure of the conventional MIM FED has a simple passive matrix structure, as the screen becomes large, the length and resistance of the scan electrode increase, and as a result, a large drop in voltage causes a difference in brightness between the left and right sides of the screen. When driving the device, current flows not only in the selected cell but also in a cell that will not be selected, causing cross talk. In view of such a problem, the present invention is spaced apart from the data line and the scan line, and the N-th data line is operated by the operation of a plurality of MIM cells and an N-th scan line driven by a predetermined voltage Vdd applied from the outside. A plurality of cell drivers for outputting data applied to the MIM cell and outputting a predetermined voltage Vdd applied to the MIM cell by a difference between the potential of the output data and the potential applied to the (N + 1) th scan line. In this configuration, it is possible ...

The electron emission device and display device using the same

Electron emitting electrode inside insulator

(57)【要約】 【課題】 トンネル効果を利用して電子の放出を起こす 電子放出素子であって、印加電圧のために絶縁破壊が起 き難い、新たな構造の電子放出素子とこの素子を用いた 電子の放出の方法の提供。 【解決手段】 誘電体基板の一方の面に導電層を有し、 他方の面に誘電体層及び導電層をこの順に有し、前記誘 電体層が５ｎｍ以下の厚さと前記誘電体基板より低い誘 電率とを有することを特徴とする電子放出素子。誘電体 基板の一方の面に導電層（１）を有し、他方の面に誘電 体層及び導電層（２）をこの順に有し、前記誘電体層が ５ｎｍ以下の厚さと前記誘電体基板より低い誘電率を有 する素子の導電層（１）と（２）の間に、導電層（１） が陰極となり、導電層（２）が陽極となるように電圧を 印加することで、導電層（２）の表面から電子を放出さ せる方法。

Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device

An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9≦y≦75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.

Electron emission device and display device using the same

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a film thickness of 2.5 μm or greater. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

an MIM or MIS electron source and method of manufacturing the same

제 1 도전층(101)과, 상기 제 1 도전층상에 형성된 절연층(103)과, 상기 절연층(103)상에 형성된 제 2 도전층(104)에 의해 형성된 MIM 또는 MIS 전자원에 있어서, 상기 제 1 도전층(101)과 제 2 도전층(104)간에 전압을 인가함으로써, 상기 절연층(103)내에 터널 전류가 발생되도록 하고, 상기 절연층(103)의 막 두께와 상기 제 2 도전층(104)의 막 두께는 균일하게 되도록 형성된다. A MIM or MIS electron source formed by a first conductive layer (101), an insulating layer (103) formed on the first conductive layer, and a second conductive layer (104) formed on the insulating layer (103) A tunnel current is generated in the insulating layer 103 by applying a voltage between the first conductive layer 101 and the second conductive layer 104 so that a thickness of the insulating layer 103 and a thickness The film thickness of the layer 104 is formed to be uniform.

Electron emission device and display device using the same

An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer contains chemical elements constituting the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Electron emission element, electron emission device, charge device, image forming device, electron radiation curing device, light-emitting device, image display device, blower device, cooling device, and manufacturing method for electron emission element

An electron emission element ( 1 ) includes an electrode substrate ( 2 ) and a thin film electrode ( 3 ), and emits electrons from the thin film electrode ( 3 ) by voltage application across the electrode substrate ( 2 ) and the thin film electrode ( 3 ). An electron accelerating layer ( 4 ) containing at least insulating fine particles ( 5 ) is provided between the electrode substrate ( 2 ) and the thin film electrode ( 3 ). The electrode substrate ( 2 ) has a convexoconcave surface. The thin film electrode ( 3 ) has openings ( 6 ) above convex parts of the electrode substrate ( 2 ).

Image display device

Emission layer formed by rapid thermal formation process

NETWORK OF ELECTRONIC SOURCES BY FIELD ISSUANCE AND MANUFACTURING PROCEDURE OF THE SAME.

Una red de fuentes (10) electrónicas por emisión de campo que comprende un substrato eléctricamente conductor (1) que tiene una capa eléctricamente conductora (8) situada sobre una de las superficies principales de dicho substrato conductor; una capa de deriva de campo eléctrico intenso (6) formada sobre la citada capa conductora (8) de dicho substrato eléctricamente conductor (1), y electrodos de superficie (7) de una película delgada eléctricamente conductora formada sobre la capa de deriva de campo eléctrico intenso (6), en la que se inyectan electrones desde dicho substrato eléctricamente conductor (1) en la citada capa de deriva de campo eléctrico intenso (6) y son derivados y descargados a través de la citada película conductora delgada cuando se aplica, durante la actuación de la red, una tensión a través de dicha película conductora delgada y de dicha capa conductora (8) del citado substrato eléctricamente conductor (1), sirviendo la citada película conductora delgada como electrodo positivo, en la que dicha capa conductora (8) está formada por una pluralidad de bandas que se extienden en paralelo unas con otras a intervalos predeterminados sobre dicho substrato conductor (1), y la citada película conductora delgada (7) está formada por una pluralidad de bandas que se extienden en paralelo unas con otras a intervalos predeterminados de una manera que se enfrentan a, y que cruzan sobre, las bandas de dicha capa conductora (8) a través de la citada capa de deriva de campo eléctrico intenso (6), y en la que dicha capa de deriva de campo eléctrico intenso (6) es una capa semiconductora policristalina porosa (3) que ha sido sometida a oxidación o nitración, con regiones de dicha capa de deriva de campo eléctrico intenso (6) que están retenidas entre la citada capa conductora (8) y la citada película conductora delgada en puntos de intersección de las bandas de dicha capa conductora (8) y de dicha película conductora delgada, formando con ello una pluralidad de ...

Field emission device manufacturing method

본 발명은 전계방출소자 제조방법에 관한 것으로, 특히 MIM(Metal Insulating Metal) 캐소드의 터널 산화막 손상을 최소화하여 전계방출소자의 신뢰성과 수명을 연장하는데 적당하도록 한 전계방출소자 제조방법에 관한 것이다. 종래 전계방출소자 제조 방법은 터널 산화막을 공정 초기에 형성하기 때문에 공정중의 플라즈마 식각에 의한 화학적 손상, 박막 증착 과정에서의 물리적/전기적 손상, 박막의 응력에 의한 기계적 손상등이 발생할 수 있으므로 신뢰성과 수명이 짧아지게 되는 문제점이 있었다. 이와 같은 문제점을 감안한 본 발명은 기판 상에 형성된 하부 전극을 상부 일부를 제외하고 양극 산화하여 양극 산화막을 형성하고, 형성된 구조물 상부에 직접 이중 절연막을 성막하는 단계와; 상기 구조물 상부에 차례로 공정에 따른 후속 적층막들을 형성 및 패터닝하는 단계와; 상기 구조물을 차례로 식각하여 상기 양극 산화 되지 않은 하부 전극의 상부가 노출되도록 전자 방출 개구부를 형성하는 단계와; 상기 개구부에 의해 노출된 하부 전극의 상부에 터널 산화막을 형성한 후 구조물 상부 전면에 최상부 전극을 형성하는 단계를 포함하는 전계방출소자 제조방법을 제공함으로써 하판 형성 공정에서 발생할 수 있는 터널 산화막의 손상을 최소화하여 소자의 신뢰성과 수명을 개선하는 효과와 함께, 터널 산화막 손상을 복구하기위한 공정들을 생략 할 수 있는 효과가 있다. The present invention relates to a method for manufacturing a field emission device, and more particularly, to a method for manufacturing a field emission device suitable for extending the reliability and lifespan of a field emission device by minimizing damage to a tunnel oxide of a MIM (Metal Insulating Metal) cathode. In the conventional field emission device manufacturing method, the tunnel oxide film is formed at the beginning of the process, so chemical damage by plasma etching during the process, physical / electrical damage during the thin film deposition process, and mechanical damage by the stress of the thin film may occur. There was a problem that the life is shortened. In view of the above problems, the present invention includes the steps of: anodizing a lower electrode formed on a substrate except for an upper portion thereof to form an anodized film, and forming a double insulating film directly on the formed structure; Forming and patterning subsequent laminated films according to the process in turn on top of the structure; Sequentially etching the structure to form an electron emission opening to expose an upper portion of the non-anodized lower electrode; Forming a tunnel oxide film on the upper portion of the lower electrode exposed by the opening, and then ...

Electron emission device and display apparatus using the same

An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.