Emitter with dielectric layer having implanted conducting centers

01-03-2004 дата публикации
Номер:
TW0200403846A
Принадлежит: Hewlett Packard Development Co
Контакты:
Номер заявки: 54-82-9210
Дата заявки: 10-04-2003



An emitter (10) has a dielectric layer (12) formed on a conductor (14), with a thin metal layer (16) over the dielectric layer (12). A plurality of conducting centers (28) is in the dielectric (12) layer to allow electrons to pass through the dielectric (12) from the conductor (14) to the thin metal layer (16) via quantum tunneling.