Electron emitter for generating an electron beam

An electron emitter for generating an electron beam is characterized in that the end of the emitter on the emission side of the electron beam is conical and has a radius of curvature of 1 um or more and is applied with an electric field to thereby emit electrons using a Schottky effect, and wherein the emitter has a form not to reveal a {100} crystal plane in a portion of the side surface.

Electron beam generating appparatus and electron emitters

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

Systems for sample analysis

Ion sources, systems and methods

The present invention refers to a system, comprising a scanning electron microscope capable of providing an electron beam and a gas field ion source (120) capable of interacting with a gas (182) to generate an ion beam (192). The scanning electron microscope and the gas field ion microscope (100) are positioned so that, during use, both the electron beam and the ion beam can be used to investigate a sample (180). A system according to the present invention also comprises a focused ion beam instrument. The figure published with the abstract only shows the gas field ion microscope (100).

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

ION SOURCES, SYSTEMS AND METHODS

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion source, system and method

本申请公开了一种离子源、系统和方法。该系统包括：气体场离子源，能够与气体相互作用从而产生与样品相互作用的离子束，从而引起二次离子离开所述样品；至少一探测器，被配置使得在使用期间，所述至少一探测器可以探测至少一些所述二次离子；电子处理器，电连接至所述至少一探测器，使得在使用期间，所述电子处理器可以根据所述被探测的二次离子而处理信息，以便确定所述样品的信息；其中所述离子束在所述样品的表面具有10nm或更小的尺寸的斑点尺寸。

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.A system, comprising: an ion source capable of interacting with a gas to generate an ion beam that can interact with a sample to cause multiple different types of particles to leave the sample; and at least one detector configured to detect at least two different types of particles of the multiple different types of particles, wherein the multiple different types of particles are selected from the group consisting of secondary electrons, Auger electrons, secondary ions, secondary neutral particles, primary neutral particles, scattered ions and photons.

Ion sources, systems and methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

IONENQUELLE UND ELEKTRONENQUELLE MIT EINZELATOMABSCHLUSSSTRUKTUR,SPITZE MIT EINZELATOMABSCHLUSSSTRUKTUR, GASFELDIONENQUELLE,VORRICHTUNG MIT FOKUSSIERTEM IONENSTRAHL, ELEKTRONENQUELLE,ELEKTRONENMIKROSKOP, MASKENKORREKTURVORRICHTUNG UND VERFAHREN ZURHERSTELLUNG EINER SPITZE MIT EINZELATOMABSCHLUSSSTRUKTUR

Bereitgestellt wird eine Spitze, welche in der Lage ist, eine Einzelatomabschlussstruktur, bei welcher ein abgelegenes Ende von nur einem Atom gebildet wird, wiederholt zu regenerieren. Eine Spitze (1) mit einer Einzelatomabschlussstruktur umfasst: ein dünnes Linienelement (2), welches aus einem ersten Metallmaterial hergestellt ist; einen vorstehenden Abschnitt (4), welcher aus einem zweiten Metallmaterial hergestellt ist, welcher an zumindest einem abgelegenen Endabschnitt (2a) des dünnen Linienelements (2) gebildet ist und ein abgelegenes Ende aufweist, welches mit nur einem Atom abgeschlossen ist; und einen Zuführabschnitt (5), welcher aus dem zweiten, dem vorstehenden Abschnitt (4) zuzuführenden Metallmaterial hergestellt ist, welcher in der Nähe des abgelegenen Endabschnitts (2a) des dünnen Linienelements (2) ausgebildet ist.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

Ion sources, systems and methods

The present invention refers to a system that comprises an ion source, wherein the system is capable of imaging the ion source in a first mode, and the system is capable of using the ion source to collect an image of a sample in a second mode, the sample being different from the ion source. The figure shows a gas field ion microscopy system (100).

イオン源、システム及び方法

Systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ultra high precision measurement tool

A focused ion beam device (100) is described comprising a gas field ion source (10) with an analyzer (175) for analyzing and classifying the structure of a specimen (120), a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip (20), the emitter tip has a base tip (22) comprising a first material and a supertip (25) comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission centre of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Nano-tip fabrication by spatially controlled etching

A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

NANO-TIP FABRICATION BY SPATIALLY CONTROLLED ETCHING

A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

PROBLEM TO BE SOLVED: To disclose ion sources, systems and methods. SOLUTION: Methods comprise: generating an ion beam by causing a gas to interact with two or more atoms of a terminal shelf of an electrically conductive tip of a gas field ion source (the terminal shelf includes atoms the number of which is between 3 and 20 including 3 and 20.); accelerating a chemical reaction on a surface of a sample by causing the ion beam to interact with an activation gas; and blocking ions in the ion beam so that 70% or more of the ions in the ion beam reaching the sample are generated via an interaction of the gas with only one atom of the terminal shelf. COPYRIGHT: (C)2012,JPO&INPIT ...

ION SOURCES, SYSTEMS AND METHODS

Ion source systems

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion source and electron source having single-atom termination structure, tip having single-atom termination structure, gas field ion source, focused ion beam apparatus, electron source, electron microscope, mask repair apparatus, and method of manufacturing tip having single-atom termination structure

Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip (1) having a single-atom termination structure includes: a thin line member (2) made of a first metal material; a protruding portion (4) made of a second metal material, which is formed at least in a distal end portion (2a) of the thin line member (2), and has a distal end terminated with only one atom; and a supply portion (5) made of the second metal material to be supplied to the protruding portion (4), which is formed in the vicinity of the distal end portion (2a) of the thin line member (2).

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Ultra high precision measurement tool

A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission center of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

The present invention refers to a system that comprises an ion source, wherein the system is capable of imaging the ion source in a first mode, and the system is capable of using the ion source to collect an image of a sample in a second mode, the sample being different from the ion source.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

Methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

ION SOURCES, SYSTEMS AND METHODS

Ion beam generating system

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

Method of interacting ion beam with a sample

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

イオン源、システム及び方法

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Methods for processing a sample

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

PARTICLE SOURCE AND MANUFACTURING METHOD THEREOF

A method for manufacturing a particle source(100) is provided, which comprises the following steps: placing a metal wire in a vacuum environment and introducing active gas; adjusting the temperature of the metal wire; applying a positive high-voltage V to the metal wire; an etching strip is formed on the side face of top of the metal wire, and a field etching is generated in the etching strip; a surface electric field of the top end of the metal wire is strengthened by the field etching, the metal atom is evaporated out until the surface electric field of the top end of the metal wire is stronger than the field evaporating electric field of the metal wire; after the field evaporating is induced by the field etching, the two means are adjusted with each other until the top of the metal wire is in the shape of a base(120) and a tip(110) on the base(120), the field etching is generated on the side face to form the base(120), the top of the metal wire is reduced from the side face and the top ...

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

The present invention refers to a system comprising a gas field ion source (120) capable of interacting with a gas (182) to generate an ion beam (192) and an ion optics (130) configured to focus the ion beam onto a surface (181) of a sample (180) so that the ion beam can interact with a sample to cause particles (194) to leave the sample, wherein the ion beam has a spot size with a dimension of 10 nm or less at the surface of the sample. The system also comprises at least one detector (150), which is configured so that, during use, the at least one detector can detect secondary ions (194) emitted by the sample due to the interaction of the ion beam with the surface of the sample, wherein the at least one detector is further configured to analyse the detected secondary ions according to their mass. The system according to the present invention also comprises an electronic processor that can process information based on the detected secondary ions to determine information about the mass of ...

ION SOURCES, SYSTEMS AND METHODS

方法

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample.

Ion sources, systems and methods

The present invention refers to a system, comprising a scanning electron microscope capable of providing an electron beam and a gas field ion source capable of interacting with a gas to generate an ion beam. The scanning electron microscope and the gas field ion microscope are positioned so that, during use, both the electron beam and the ion beam can be used to investigate a sample. A system according to the present invention also comprises a focused ion beam instrument.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion source, system and method

公开了离子源、系统和方法。

Ion sources, systems and methods

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion sources, systems and methods

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

公开了离子源、系统和方法。

Systems for ion beam generation

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion microscope, ion source systems

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion microscope systems and ion microscope operating methods

Ion sources, systems and methods

Ion sources, systems and methods

Ion microscope operating methods

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Sample manipulator, ion sources, systems and methods of use

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Method of interacting ion beams with a sample, method of sputtering a sample with ions, method of investigating a sample with an ion beam and an electron beam, combined scanning electron microscope and gas field ion source system.

Method of making a gas field system, method of aligning an ion source with an ion optic system, method of forming an electrically conductive tip of a gas field ion source, ion source system, method of removing chemical species from an ion beam, gas field

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

システム

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Particle source and manufacture method thereof

本发明提供了一种用于制造粒子源的方法，包括：将金属丝置于真空环境中并通入活性气体，并对金属丝的温度进行调节，并对金属丝施加正高压V，使得在金属丝头部侧面产生刻蚀带，在该刻蚀带内发生场致刻蚀；场致刻蚀使得金属丝头部顶端处表面电场增强，直到大于金属丝材料的场致蒸发电场，使得此处的金属原子被蒸发出去；在场致刻蚀触发了场致蒸发之后，场致刻蚀和场致蒸发这两种机制相互调节直到金属丝头部形状变成了由底座和底座上的针尖组成，其中场致刻蚀发生在侧面，形成了底座，而场致蒸发发生在顶端，形成了针尖；以及当获得具有预定形状的金属丝头部时，停止场致刻蚀和场致蒸发。

Ion source and electron source having monoatomic termination structure, tip having monoatomic termination structure, gas field ionization ion source, focused ion beam device, election source, electron microscope, mask correction device, and method of producing tip having monoatomic termination structure

【課題】先端が１個の原子のみで構成される単原子終端構造を繰り返し再生することができるティップを提供する。【解決手段】単原子終端構造を有するティップ１は、第１の金属材料から成る細線部材２と、細線部材２の少なくとも先端部２ａに設けられ、１個の原子のみにより終端された先端を有し、第２の金属材料から成る突起部４と、細線部材２の先端部２ａ付近に設けられ、突起部４に供給される第２の金属材料から成る供給部５と、を備える。【選択図】図１

Ion sources, systems and methods

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion source, system and method

イオン源、システム及び方法を開示するものである。