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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 174. Отображено 152.
29-02-2012 дата публикации

Electron emitter for generating an electron beam

Номер: GB0002483182A
Принадлежит:

An electron emitter for generating an electron beam is characterized in that the end of the emitter on the emission side of the electron beam is conical and has a radius of curvature of 1 um or more and is applied with an electric field to thereby emit electrons using a Schottky effect, and wherein the emitter has a form not to reveal a {100} crystal plane in a portion of the side surface.

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28-12-2011 дата публикации

Electron beam generating appparatus and electron emitters

Номер: GB0201119712D0
Автор:
Принадлежит:

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24-01-2013 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101226381B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

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26-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020080078035A
Принадлежит:

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

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05-06-2013 дата публикации

Ion sources, systems and methods

Номер: EP2416343A3
Принадлежит:

The present invention refers to a system, comprising a scanning electron microscope capable of providing an electron beam and a gas field ion source (120) capable of interacting with a gas (182) to generate an ion beam (192). The scanning electron microscope and the gas field ion microscope (100) are positioned so that, during use, both the electron beam and the ion beam can be used to investigate a sample (180). A system according to the present invention also comprises a focused ion beam instrument. The figure published with the abstract only shows the gas field ion microscope (100).

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08-05-2013 дата публикации

Ion source, system and method

Номер: JP0005193053B2
Принадлежит: アリス コーポレーション

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

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11-01-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020110003390A
Автор:
Принадлежит:

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14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067318A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067311A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

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16-07-2014 дата публикации

Ion source, system and method

Номер: CN102324365B
Принадлежит: CARL ZEISS MICROSCOPY GMBH

本申请公开了一种离子源、系统和方法。该系统包括:气体场离子源,能够与气体相互作用从而产生与样品相互作用的离子束,从而引起二次离子离开所述样品;至少一探测器,被配置使得在使用期间,所述至少一探测器可以探测至少一些所述二次离子;电子处理器,电连接至所述至少一探测器,使得在使用期间,所述电子处理器可以根据所述被探测的二次离子而处理信息,以便确定所述样品的信息;其中所述离子束在所述样品的表面具有10nm或更小的尺寸的斑点尺寸。

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16-09-2007 дата публикации

Ion sources, systems and methods

Номер: TW0200735163A
Принадлежит:

Ion sources, systems and methods are disclosed.A system, comprising: an ion source capable of interacting with a gas to generate an ion beam that can interact with a sample to cause multiple different types of particles to leave the sample; and at least one detector configured to detect at least two different types of particles of the multiple different types of particles, wherein the multiple different types of particles are selected from the group consisting of secondary electrons, Auger electrons, secondary ions, secondary neutral particles, primary neutral particles, scattered ions and photons.

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30-04-2012 дата публикации

Ion sources, systems and methods

Номер: KR0101139113B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067314A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

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06-06-2019 дата публикации

IONENQUELLE UND ELEKTRONENQUELLE MIT EINZELATOMABSCHLUSSSTRUKTUR,SPITZE MIT EINZELATOMABSCHLUSSSTRUKTUR, GASFELDIONENQUELLE,VORRICHTUNG MIT FOKUSSIERTEM IONENSTRAHL, ELEKTRONENQUELLE,ELEKTRONENMIKROSKOP, MASKENKORREKTURVORRICHTUNG UND VERFAHREN ZURHERSTELLUNG EINER SPITZE MIT EINZELATOMABSCHLUSSSTRUKTUR

Номер: DE102018130252A1
Принадлежит:

Bereitgestellt wird eine Spitze, welche in der Lage ist, eine Einzelatomabschlussstruktur, bei welcher ein abgelegenes Ende von nur einem Atom gebildet wird, wiederholt zu regenerieren. Eine Spitze (1) mit einer Einzelatomabschlussstruktur umfasst: ein dünnes Linienelement (2), welches aus einem ersten Metallmaterial hergestellt ist; einen vorstehenden Abschnitt (4), welcher aus einem zweiten Metallmaterial hergestellt ist, welcher an zumindest einem abgelegenen Endabschnitt (2a) des dünnen Linienelements (2) gebildet ist und ein abgelegenes Ende aufweist, welches mit nur einem Atom abgeschlossen ist; und einen Zuführabschnitt (5), welcher aus dem zweiten, dem vorstehenden Abschnitt (4) zuzuführenden Metallmaterial hergestellt ist, welcher in der Nähe des abgelegenen Endabschnitts (2a) des dünnen Linienelements (2) ausgebildet ist.

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14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067316A3
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067315A3
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
23-08-2007 дата публикации

Ion sources, systems and methods

Номер: US2007194226A1
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067310A3
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
29-07-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101052952B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Подробнее
26-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020080078026A
Принадлежит:

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

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05-06-2013 дата публикации

Ion sources, systems and methods

Номер: EP2416342A3
Принадлежит:

The present invention refers to a system that comprises an ion source, wherein the system is capable of imaging the ion source in a first mode, and the system is capable of using the ion source to collect an image of a sample in a second mode, the sample being different from the ion source. The figure shows a gas field ion microscopy system (100).

Подробнее
16-02-2015 дата публикации

Systems and methods

Номер: TW0201506986A
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US2007158557A1
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
25-11-2009 дата публикации

Ultra high precision measurement tool

Номер: EP2124245A1
Принадлежит:

A focused ion beam device (100) is described comprising a gas field ion source (10) with an analyzer (175) for analyzing and classifying the structure of a specimen (120), a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip (20), the emitter tip has a base tip (22) comprising a first material and a supertip (25) comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission centre of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

Подробнее
13-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: EP0001955356A2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067317A3
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067313A3
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
21-06-2007 дата публикации

Ion sources, systems and methods

Номер: US20070138388A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

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07-10-2008 дата публикации

Nano-tip fabrication by spatially controlled etching

Номер: US0007431856B2

A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.

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13-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: EP0001955354A2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
12-01-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020110003566A
Автор:
Принадлежит:

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14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067328A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

Подробнее
01-02-2007 дата публикации

NANO-TIP FABRICATION BY SPATIALLY CONTROLLED ETCHING

Номер: US20070025907A1

A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.

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12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US2007158558A1
Принадлежит:

Ion sources, systems and methods are disclosed.

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24-05-2012 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: JP2012098293A
Принадлежит:

PROBLEM TO BE SOLVED: To disclose ion sources, systems and methods. SOLUTION: Methods comprise: generating an ion beam by causing a gas to interact with two or more atoms of a terminal shelf of an electrically conductive tip of a gas field ion source (the terminal shelf includes atoms the number of which is between 3 and 20 including 3 and 20.); accelerating a chemical reaction on a surface of a sample by causing the ion beam to interact with an activation gas; and blocking ions in the ion beam so that 70% or more of the ions in the ion beam reaching the sample are generated via an interaction of the gas with only one atom of the terminal shelf. COPYRIGHT: (C)2012,JPO&INPIT ...

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12-01-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020110003565A
Автор:
Принадлежит:

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067315A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

Подробнее
12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US2007158580A1
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
07-01-2020 дата публикации

Ion source and electron source having single-atom termination structure, tip having single-atom termination structure, gas field ion source, focused ion beam apparatus, electron source, electron microscope, mask repair apparatus, and method of manufacturing tip having single-atom termination structure

Номер: US0010529531B2

Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip (1) having a single-atom termination structure includes: a thin line member (2) made of a first metal material; a protruding portion (4) made of a second metal material, which is formed at least in a distal end portion (2a) of the thin line member (2), and has a distal end terminated with only one atom; and a supply portion (5) made of the second metal material to be supplied to the protruding portion (4), which is formed in the vicinity of the distal end portion (2a) of the thin line member (2).

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10-11-2010 дата публикации

Ion sources, systems and methods

Номер: CN0101882551A
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
03-09-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020080080354A
Принадлежит:

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

Подробнее
26-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020080078034A
Принадлежит:

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

Подробнее
01-08-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101053348B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Подробнее
22-07-2014 дата публикации

Ultra high precision measurement tool

Номер: US8785849B2

A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission center of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

Подробнее
23-08-2007 дата публикации

Ion sources, systems and methods

Номер: US20070194251A1
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
08-02-2012 дата публикации

Ion sources, systems and methods

Номер: EP2416342A2
Принадлежит:

The present invention refers to a system that comprises an ion source, wherein the system is capable of imaging the ion source in a first mode, and the system is capable of using the ion source to collect an image of a sample in a second mode, the sample being different from the ion source.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067314A3
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
13-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: EP0001955355A2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
26-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020080078033A
Принадлежит:

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

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26-01-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020110008322A
Автор:
Принадлежит:

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067310A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067296A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

Подробнее
29-07-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101052997B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067313A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

Подробнее
26-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020080078027A
Принадлежит:

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

Подробнее
28-02-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067328A3

Ion sources, systems and methods are disclosed.

Подробнее
08-05-2012 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101141863B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Подробнее
06-09-2007 дата публикации

Ion sources, systems and methods

Номер: US20070205375A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
30-10-2012 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101196026B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Подробнее
27-09-2007 дата публикации

Ion sources, systems and methods

Номер: US20070221843A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067317A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067316A2
Принадлежит: ALIS CORPORATION

Ion sources, systems and methods are disclosed.

Подробнее
23-08-2007 дата публикации

Ion sources, systems and methods

Номер: US20070194226A1
Принадлежит: Alis Corp, CARL ZEISS SMT GMBH, Nawotec GmbH

Ion sources, systems and methods are disclosed.

Подробнее
01-08-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101053299B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Подробнее
06-09-2007 дата публикации

Ion sources, systems and methods

Номер: US2007205375A1
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
01-08-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101053279B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Подробнее
14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067311A3
Принадлежит:

Ion sources, systems and methods are disclosed.

Подробнее
21-01-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020110007254A
Автор:
Принадлежит:

Подробнее
01-08-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101053389B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

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26-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR1020080078029A
Принадлежит:

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

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14-06-2007 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: WO000002007067318A3
Принадлежит:

Ion sources, systems and methods are disclosed.

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22-11-2012 дата публикации

PARTICLE SOURCE AND MANUFACTURING METHOD THEREOF

Номер: WO2012155791A1
Автор: LIU, Huarong, CHEN, Ping
Принадлежит:

A method for manufacturing a particle source(100) is provided, which comprises the following steps: placing a metal wire in a vacuum environment and introducing active gas; adjusting the temperature of the metal wire; applying a positive high-voltage V to the metal wire; an etching strip is formed on the side face of top of the metal wire, and a field etching is generated in the etching strip; a surface electric field of the top end of the metal wire is strengthened by the field etching, the metal atom is evaporated out until the surface electric field of the top end of the metal wire is stronger than the field evaporating electric field of the metal wire; after the field evaporating is induced by the field etching, the two means are adjusted with each other until the top of the metal wire is in the shape of a base(120) and a tip(110) on the base(120), the field etching is generated on the side face to form the base(120), the top of the metal wire is reduced from the side face and the top ...

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27-09-2007 дата публикации

Ion sources, systems and methods

Номер: US2007221843A1
Принадлежит:

Ion sources, systems and methods are disclosed.

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05-06-2013 дата публикации

Ion sources, systems and methods

Номер: EP2418674A3
Принадлежит:

The present invention refers to a system comprising a gas field ion source (120) capable of interacting with a gas (182) to generate an ion beam (192) and an ion optics (130) configured to focus the ion beam onto a surface (181) of a sample (180) so that the ion beam can interact with a sample to cause particles (194) to leave the sample, wherein the ion beam has a spot size with a dimension of 10 nm or less at the surface of the sample. The system also comprises at least one detector (150), which is configured so that, during use, the at least one detector can detect secondary ions (194) emitted by the sample due to the interaction of the ion beam with the surface of the sample, wherein the at least one detector is further configured to analyse the detected secondary ions according to their mass. The system according to the present invention also comprises an electronic processor that can process information based on the detected secondary ions to determine information about the mass of ...

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13-08-2008 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: EP0001955351A2
Принадлежит:

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15-04-2013 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101254894B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

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01-08-2011 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: KR0101053403B1
Принадлежит: 앨리스 코포레이션

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

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12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US20070158557A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

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08-02-2012 дата публикации

Ion sources, systems and methods

Номер: EP2416344A2
Принадлежит:

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample.

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08-02-2012 дата публикации

Ion sources, systems and methods

Номер: EP2416343A2
Принадлежит:

The present invention refers to a system, comprising a scanning electron microscope capable of providing an electron beam and a gas field ion source capable of interacting with a gas to generate an ion beam. The scanning electron microscope and the gas field ion microscope are positioned so that, during use, both the electron beam and the ion beam can be used to investigate a sample. A system according to the present invention also comprises a focused ion beam instrument.

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12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US20070158555A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

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16-07-2009 дата публикации

ION SOURCES, SYSTEMS AND METHODS

Номер: US2009179161A1
Принадлежит:

Ion sources, systems and methods are disclosed.

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16-08-2007 дата публикации

Ion sources, systems and methods

Номер: US2007187621A1
Принадлежит:

Ion sources, systems and methods are disclosed.

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02-01-2019 дата публикации

Ion sources, systems and methods

Номер: EP2416343B1
Принадлежит: Carl Zeiss Microscopy LLC

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31-03-2009 дата публикации

Ion sources, systems and methods

Номер: US7511280B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

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06-03-2013 дата публикации

Ion source, system and method

Номер: JP5155874B2
Принадлежит: アリス コーポレーション

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

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08-05-2013 дата публикации

Ion source, system and method

Номер: JP5193054B2
Принадлежит: アリス コーポレーション

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

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13-03-2019 дата публикации

Ion sources, systems and methods

Номер: EP2418674B1
Принадлежит: Carl Zeiss Microscopy LLC

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30-06-2009 дата публикации

Ion sources, systems and methods

Номер: US7554097B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
31-03-2009 дата публикации

Ion sources, systems and methods

Номер: US7511279B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
17-03-2009 дата публикации

Ion sources, systems and methods

Номер: US7504639B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
02-10-2013 дата публикации

Ion sources, systems and methods

Номер: CN101882551B
Принадлежит: CARL ZEISS MICROSCOPY GMBH

公开了离子源、系统和方法。

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01-12-2014 дата публикации

Systems for ion beam generation

Номер: TWI463515B
Принадлежит: Carl Zeiss Microscopy LLC

Подробнее
07-07-2009 дата публикации

Ion sources, systems and methods

Номер: US7557358B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
03-02-2009 дата публикации

Ion sources, systems and methods

Номер: US7485873B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
02-10-2013 дата публикации

Ion source, system and method

Номер: JP5302686B2

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Подробнее
14-04-2009 дата публикации

Ion sources, systems and methods

Номер: US7518122B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
13-08-2008 дата публикации

Ion sources, systems and methods

Номер: EP1955353A2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
13-08-2008 дата публикации

Ion sources, systems and methods

Номер: EP1955349A2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
24-02-2009 дата публикации

Ion sources, systems and methods

Номер: US7495232B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
10-02-2009 дата публикации

Ion sources, systems and methods

Номер: US7488952B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
25-07-2018 дата публикации

Ion sources, systems and methods

Номер: EP1955350B1
Принадлежит: Carl Zeiss Microscopy LLC

Подробнее
21-08-2013 дата публикации

Ion source, system and method

Номер: JP5266447B2

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Подробнее
29-06-2016 дата публикации

Ion sources, systems and methods

Номер: EP2416342B1
Принадлежит: Carl Zeiss Microscopy LLC

Подробнее
10-10-2012 дата публикации

Ion source, system and method

Номер: JP5043855B2
Принадлежит: アリス コーポレーション

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Подробнее
31-08-2010 дата публикации

Ion sources, systems and methods

Номер: US7786451B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
03-04-2013 дата публикации

Ion source, system and method

Номер: JP5173828B2
Принадлежит: アリス コーポレーション

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Подробнее
18-09-2013 дата публикации

Ion source, system and method

Номер: JP5292545B2

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Подробнее
21-04-2009 дата публикации

Ion sources, systems and methods

Номер: US7521693B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
07-02-2012 дата публикации

Ion sources, systems and methods

Номер: US8110814B2
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
10-06-2014 дата публикации

Ion sources, systems and methods

Номер: US8748845B2
Принадлежит: Carl Zeiss Microscopy LLC

Ion sources, systems and methods are disclosed.

Подробнее
12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US20070158580A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US20070158558A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US20070158556A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US20070158581A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
12-07-2007 дата публикации

Ion sources, systems and methods

Номер: US20070158582A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
16-08-2007 дата публикации

Ion sources, systems and methods

Номер: US20070187621A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
13-09-2007 дата публикации

Ion sources, systems and methods

Номер: US20070210250A1
Принадлежит: Alis Corp, CARL ZEISS SMT GMBH, Nawotec GmbH

Ion sources, systems and methods are disclosed.

Подробнее
13-09-2007 дата публикации

Ion sources, systems and methods

Номер: US20070210251A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
16-07-2009 дата публикации

Ion sources, systems and methods

Номер: US20090179161A1
Принадлежит: Alis Corp

Ion sources, systems and methods are disclosed.

Подробнее
17-06-2015 дата публикации

Particle source and manufacture method thereof

Номер: CN102789947B
Автор: 刘华荣, 陈娉
Принадлежит: CETC 38 Research Institute

本发明提供了一种用于制造粒子源的方法,包括:将金属丝置于真空环境中并通入活性气体,并对金属丝的温度进行调节,并对金属丝施加正高压V,使得在金属丝头部侧面产生刻蚀带,在该刻蚀带内发生场致刻蚀;场致刻蚀使得金属丝头部顶端处表面电场增强,直到大于金属丝材料的场致蒸发电场,使得此处的金属原子被蒸发出去;在场致刻蚀触发了场致蒸发之后,场致刻蚀和场致蒸发这两种机制相互调节直到金属丝头部形状变成了由底座和底座上的针尖组成,其中场致刻蚀发生在侧面,形成了底座,而场致蒸发发生在顶端,形成了针尖;以及当获得具有预定形状的金属丝头部时,停止场致刻蚀和场致蒸发。

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24-06-2019 дата публикации

Ion source and electron source having monoatomic termination structure, tip having monoatomic termination structure, gas field ionization ion source, focused ion beam device, election source, electron microscope, mask correction device, and method of producing tip having monoatomic termination structure

Номер: JP2019102242A

【課題】先端が1個の原子のみで構成される単原子終端構造を繰り返し再生することができるティップを提供する。【解決手段】単原子終端構造を有するティップ1は、第1の金属材料から成る細線部材2と、細線部材2の少なくとも先端部2aに設けられ、1個の原子のみにより終端された先端を有し、第2の金属材料から成る突起部4と、細線部材2の先端部2a付近に設けられ、突起部4に供給される第2の金属材料から成る供給部5と、を備える。【選択図】図1

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05-06-2013 дата публикации

Ion sources, systems and methods

Номер: EP2416344A3
Принадлежит: Alis Corp

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Подробнее