ION BEAM PRODUCTION DEVICE

ION SOURCES, SYSTEMS AND METHODS

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed. © KIPO & WIPO 2008 ...

Method to create three-dimensional images of semiconductor structures using a focused ion beam device and a scanning electron microscope

A disclosed method produces an image of one or more fabricated features by iteratively producing a cross-section of the features. The method includes milling a surface proximate to the one or more fabricated features where the surface being milled is substantially parallel to a layer in which the feature is located. At each milling step, top-down imaging of the one or more fabricated features produces a plurality of cross-sectional images. Each of the plurality of cross-sectional images is reconstructed into a representation of the fabricated feature.

Multi-source ion beam etch system

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

Systems for sample analysis

PATTERNING BY ENERGETICALLY-STIMULATED LOCAL REMOVAL OF SOLID-CONDENSED-GAS LAYERS AND SOLID STATE CHEMICAL REACTIONS PRODUCED WITH SUCH LAYERS

The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam energy at the selected regions. The structure can be processed, with at least a protion of the patterned solid condensate layer on the structure surface, and then the solid condensate layer removed.Further there can be stimulated localized reaction between the solid condensate layer and the structure by directing a beam of energy at at least one selected region of the condensate layer.

Electron Beam Etching Apparatus and Method for the same

A electron beam etching apparatus uses carbon nanotube as electron emitter. The electron beam etching apparatus includes a vacuum chamber, a cathode plate, an anode plate and a driver unit. The cathode plate and the anode plate are arranged in the vacuum chamber and parallel to each other. The cathode plate includes a plurality of cathode units, where each of the cathode units uses a carbon nanotube as an electron emitter. A gate conductive layer is provided atop the cathode unit. The anode plate includes a substrate and an etching target. The driver unit is electrically connected to the cathode unit and gate conductive layer. The driver unit controls the cathode unit through the gate conductive layer to generate electron beam for etching. The accuracy of etching process can be improved and the cathode unit has the advantage of replacement possibility.

Method of etching semiconductor device using neutral beam and apparatus for etching the same

A method and an apparatus for etching a semiconductor device which can perform an etching process without causing electrical and physical damages using a neutral beam generated by a simple apparatus. In the method, ions of an ion beam having a predetermined polarity are extracted from an ion source and accelerated. An accelerated ion beam is reflected by a reflector and neutralized. A substrate to be etched positioned in the path of the neutral beam in order to etch a special material layer on the substrate with the neutral beam. The gradient of the reflector is adjusted to control an angle of incidence of the ion beam incident on the reflector, and a voltage is applied to the reflector to control the path of an incident ion beam.

METHOD FOR THE STRUCTURING OF A SUBSTRATE SURFACE

A method for the production of nanoscopic and/or microscopic surface structures on a flat substrate is provided, wherein the surface structure of the substrate is changed through the use of an ion etching process. First, a coating that features a boundary surface-active substance with a concentration of 0.01 to 5 percent by weight is applied to the substrate. The coating applied to the substrate is subsequently transformed into a solid form, and the ion etching process is then performed.

Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

Minute three dimensional structure producing apparatus and method

A structure having arbitrary rotational symmetry is produced by attaching a sample stage (turntable) to a precision rotational shaft that is continuously rotated as high precision, performing FIB deposition inside an FIB chamber while causing continuous rotation of the sample stage, or performing cut-way processing from a side surface or upper surface, like a general purpose lathe, using FIB etching.

Ion beam etching

Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. Masking elements are used to create additional masking elements, resulting in decreased spacing between adjacent structures and increased structure density.

Ion sources, systems and methods

The present invention refers to a system, comprising a scanning electron microscope capable of providing an electron beam and a gas field ion source (120) capable of interacting with a gas (182) to generate an ion beam (192). The scanning electron microscope and the gas field ion microscope (100) are positioned so that, during use, both the electron beam and the ion beam can be used to investigate a sample (180). A system according to the present invention also comprises a focused ion beam instrument. The figure published with the abstract only shows the gas field ion microscope (100).

Coaxial FIB-SEM column

A system including co-axial focused ion beam and an electron beam allows for accurate processing with the FIB using images formed by the electron beam. In one embodiment, a deflector deflects the electron beam onto the axis of the ion beam and deflects secondary particles collected through the final lens toward a detector. In one embodiment, a positively biased final electrostatic lens focuses both beams using the same voltage to allow simultaneous or alternating FIB and SEM operation. In one embodiment, the landing energy of the electrons can be varied without changing the working distance.

METAL FILM PROCESSING METHOD AND PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a metal film processing method with which it is possible to perform etching processing on a metal film, whose etching was impossible with a conventional cluster beam method, by using a cluster beam generated from an oxidation gas, a complexation gas, and a rare gas. SOLUTION: A metal film processing method of processing a metal film 72 formed on a surface of a workpiece W using a gas cluster beam comprises: forming the gas cluster beam by adiabatically expanding a gas mixture of an oxidation gas for forming an oxide through oxidation of a chemical element of the metal film, a complexation gas for forming an organometallic complex through reaction with the oxide, and a rare gas; and performing etching processing on the metal film by causing collision of the gas cluster beam with the metal film of the workpiece. COPYRIGHT: (C)2012,JPO&INPIT ...

IMPROVEMENT OF BEAM QUALITY IN FIB SYSTEM

PROBLEM TO BE SOLVED: To enhance beam quality for milling of a liquid metal ion beam. SOLUTION: The asymmetrical energy distribution of ions from an ion source allows chromatic aberration to be reduced by filtering ions in the low energy beam tail without significantly reducing processing time. A preferred embodiment includes within an ion beam column a filter that removes the low energy ions from the beam. COPYRIGHT: (C)2011,JPO&INPIT ...

ION BEAM ETCHING METHOD, AND ION BEAM ETCHING DEVICE

PROBLEM TO BE SOLVED: To provide an ion beam etching method and an ion beam etching device capable of suppressing the deformation of a drawing electrode caused by heat. SOLUTION: The ion beam etching method according to the embodiment comprises: a cooling stage S52 of cooling a drawing electrode E with an inert gas; and an etching stage S54 of etching a substrate W using an ion beam IB drawn by the drawing electrode E. COPYRIGHT: (C)2007,JPO&INPIT ...

FILM THICKNESS CONTROL METHOD IN FILM THINNING AND SYSTEM FOR EXECUTING THE METHOD

PROBLEM TO BE SOLVED: To provide a method capable of performing film thickness control set by FIB processing without a processing recipe for film thinning, and performing simply fine processing of a TEM sample or the like by a skill in some degree, and a system for executing the method. SOLUTION: In this fine processing method of the TEM sample or the like, the one-line processing quantity by an FIB under a prescribed condition is grasped, and the film thinning residual width on the sample upper face is measured by a microscope length measuring function, and the number of scanning lines necessary for processing until acquiring a prescribed width value is determined by operation, and processing is continued until acquiring the set thickness. In the method for grasping the one-line processing quantity by the FIB under the prescribed condition, the sample is processed by performing scanning of a plurality of lines, and the etching size at that time is measured by the microscope length measuring ...

Ätzverfahren unter Verwendung eines fokussierten Ionenstrahls (FIB) mit 1,2-Dijodoäthan

Verfahren zum Strukturieren eines Objekts mit Hilfe eines Partikelstrahlgeräts

Ein Verfahren zum Strukturieren eines Objekts mit wenigstens einem Partikelstrahlgerät umfasst: ein Bestimmen einer an einem ersten Objekt zu formenden Teststruktur; ein Bestimmen von ersten Prozessparametern des wenigstens einen Partikelstrahlgeräts; ein Formen der Teststruktur an dem ersten Objekt unter Verwendung der ersten Prozessparameter; ein Bestimmen einer der Teststruktur zugeordneten und an dem ersten Objekt zu formenden Informationsstruktur, welche die ersten Prozessparameter repräsentiert; ein Formen der Informationsstruktur an dem ersten Objekt; ein Bestimmen einer an einem zweiten Objekt zu formenden Nutzstruktur; ein Detektierten der an dem ersten Objekt geformten Informationsstruktur; ein Analysieren der detektierten Informationsstruktur und Bestimmen der durch die detektierte Informationsstruktur repräsentierten ersten Prozessparameter; ein Bestimmen von Prozessparametern basierend auf den bestimmten ersten Prozessparametern; und ein Formen der Nutzstruktur unter Verwendung ...

Verfahren zum Strukturieren einer Substratoberfläche

Die Erfindung betrifft ein Verfahren zum Herstellen nanoskopischer und/oder mikroskopischer Oberflächenstrukturen auf einem flächig ausgedehnten Substrat, wobei die Oberflächenstruktur des Substrates mittels eines Ionenätzprozesses verändert wird. Dabei wird zunächst ein Lack, welcher eine grenzflächenaktive Substanz mit einer Konzentration von 0,01 bis 5 Gewichtsprozent aufweist, auf dem Substrat aufgetragen, anschließend der auf dem Substrat aufgetragene Lack in eine feste Form überführt und danach der Ionenätzprozess durchgeführt.

VORRICHTUNG UND VERFAHREN ZUR KÜHLUNG VON PROBEN WÄHREND EINER EINER IONENSTRAHLPRÄPARATION

METHODS AND APPARATUS FOR PREPARING SPECIMENS FOR MICROSCOPY

METHOD OF FABRICATING NANO-TIPS WITH CONTROLLED PROFILE

A nanotip, is fabricated by modifying a precursor nanotip having an apex and a shank by applying an electric field in the presence of a reactive gas to perform field-assisted etching wherein atoms are preferentially removed from the shank by chemical interaction with the reactive gas, and controlling the reactive gas pressure and/or tip voltage to vary the electric field so as to promote field evaporation of apex atoms during fabrication of the nanotip and thereby control the overall profile of the resulting nano-tip. The method permits shaping of the overall tip profile.

Gas injection system for ion beam device

APPARATUS AND METHOD FOR INVESTIGATING AND/OR MODIFYING A SAMPLE

An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged - in a direction of propagation of charged particles emitted by said charged particle source - downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz.

Patterned atomic layer etching and deposition using miniature-column charged particle beam arrays

Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

Apparatus and method for surface modification using charged particle beams

An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.

Imaging integrated circuits with focused ion beam

Methods and apparatus for integrated circuit diagnosis, characterization or modification using a focused ion beam. A method for editing an integrated circuit includes acquiring an image of structures of an integrated circuit by applying a focused ion beam to an outer surface of the integrated circuit to visualize structures beneath the outer surface of the integrated circuit. The method includes using the image to find a location of a circuit element in the integrated circuit and then performing one or more editing operations on the circuit element by applying a focused ion beam to the location found.

Method for preparing a sample for a transmission electron microscope

A sample preparation method is provided where chipping of and damage to a film at an observed location does not occur when cutting with a machining blade is carried out in advance in order to prepare a sample for use with a transmission electronic microscope. The surroundings of an observed location are grooved using a focussed ion beam prior to performing cutting with a machining blade so that the observed location can be isolated from the film composing the sample in a floating island shape. A thin-film for embedding may then be deposited with respect to the grooving, using a focussed ion beam. If necessary, a protective film can also be prepared at the surface of the observed location using a focussed ion beam.

Working method by focused ion beam and focused ion beam working apparatus

A first working process performs a deposition working or an etching working to a workpiece by face-irradiating a focused ion beam to the workpiece, and a second working process then performs a deposition working or an etching working to the workpiece by edge-irradiating a focused ion beam to an edge of the workpiece. During the first working process, the deposition working or the etching working is performed to add the missing portion or remove the excess portion to a point slightly short of the edge boundary of the workpiece, i.e., to a point that is less than the irradiation width of the focused ion beam. The remaining missing portion or the remaining excess portion is eliminated in the second working process by edge-irradiating the focused ion beam to the edge of the workpiece.

PATTERNING BY ENERGETICALLY-STIMULATED LOCAL REMOVAL OF SOLID-CONDENSED-GAS LAYERS AND SOLID STATE CHEMICAL REACTIONS PRODUCED WITH SUCH LAYERS

DECELERATION FOCUSING ION BEAM DEVICE

PURPOSE: To make selective micro-crystal growth or surface etching with high precision and simplify the structure by furnishing an ion source, a focusing lens system, and a multi-stage decelerating lens system having a plurality of deceleration lenses. CONSTITUTION: A deceleration focusing ion beam device is equipped with a focusing beam part and a deceleration part, and the focusing beam part is furnished with a multi-stage decelerating lens system consisting of an ion source such as liquid metal ion source, a focusing lens system, a deflecting lens for scanning, and a plurality of decelerating lenses. In the deceleration part, a bias inverted from the focusing beam part is impressed by a power supply on the decelerating lenses so that the fed ion beam is decelerated, and spread of the beam is inhibited. The shapes of the decelerating lenses should be such that no great distortion is generated in the shape and path of the ion beam. The electric circuit of the decelerating lenses is designed ...

Verfahren zum Herstellen eines Emitters

Verfahren zum Herstellen eines angespitzten, nadelförmigen Emitters, wobei das Verfahren umfasst:elektrolytisches Polieren eines End-Abschnittes von einem elektrisch leitfähigen Emitter-Material, derart, dass er in Richtung zu einem Spitzen-Abschnitt davon spitz zuläuft;Durchführen eines ersten Ätzens, bei welchem der elektrolytisch polierte Abschnitt des Emitter-Materials mit einem fokussierten Ionenstrahl derart bestrahlt wird, dass pyramidenförmige Flächen erstellt werden, um einen pyramidenförmigen, angespitzten Abschnitt auszubilden, welcher eine Spitze hat, welche den Spitzen-Abschnitt umfasst; undDurchführen eines zweiten Ätzens, bei welchem der Spitzen-Abschnitt des angespitzten Abschnitts durch feldunterstütztes Gas-Ätzen weiter angespitzt wird, während ein Kristall-Aufbau am Spitzen-Abschnitt des angespitzten Abschnitts durch ein Feld-Ionen-Mikroskop beobachtet wird, und die Anzahl von Atomen an einer Vorderkante des Spitzen-Abschnitts des angespitzten Abschnitts auf eine vorbestimmte ...

Verfahren zum Herstellen eines Emitters

Verfahren zum Herstellen eines angespitzten, nadelförmigen Emitters, wobei das Verfahren umfasst: elektrolytisches Polieren eines End-Abschnittes von einem elektrisch leitfähigen Emitter-Material, derart, dass er in Richtung zu einem Spitzen-Abschnitt davon spitz zuläuft; Durchführen eines ersten Ätzens, bei welchem der elektrolytisch polierte Abschnitt des Emitter-Materials mit einem Ladungspartikelstrahl bestrahlt wird, um einen pyramidenförmigen, angespitzten Abschnitt auszubilden, welcher eine Spitze hat, welche den Spitzen-Abschnitt umfasst; Durchführen eines zweiten Ätzens, bei welchem der Spitzen-Abschnitt durch feldunterstütztes Gas-Ätzen weiter angespitzt wird, während ein Kristall-Aufbau am Spitzen-Abschnitt durch ein Feld-Ionen-Mikroskop beobachtet wird, und die Anzahl von Atomen an einer Vorderkante des Spitzen-Abschnitts auf eine vorbestimmte Anzahl oder weniger beibehalten wird; und Erwärmen des Emitter-Materials, um die Atome an der Vorderkante des Spitzen-Abschnitts des ...

Verfahren und Vorrichtung zur Ionenstrahlbearbeitung von Oberflächen

Verfahren zur Ionenstrahlbearbeitung der Oberfläche eines Substrates, bei dem das Substrat gegenüber dem Ionenstrahl einer Breitstrahl-Ionenquelle positioniert wird, und das bekannte Eigenschaftsmuster der Oberfläche des Substrates durch den Ionenstrahl partiell derart bearbeitet wird, dass ein neues technologisch definiertes Eigenschaftsmuster ausgebildet wird, dadurch gekennzeichnet, dass die Strahlcharakteristik des Ionenstrahles zur Erzeugung eines geometrischen Wirkungsmusters auf der Oberfläche (15) des Substrates (8) durch Veränderung der Ionenbeschleunigung, der Ionenenergieverteilung, der Ionenstromdichte, der Ionendichteverteilung, und/oder durch Pulsung des Ionenstrahles derart verändert wird, dass in Abhängigkeit des bekannten Eigenschaftsmusters und in Abhängigkeit des Verfahrensfortschrittes das neue technologisch definierte Eigenschaftsmuster eingestellt wird.

Vorrichtung zum Kühlen von Proben während einer Ionenstrahlpräparation

Die Erfindung betrifft eine Kühlvorrichtung (101) für eine Probe in einem Ionenstrahlätzverfahren, mit einem Probentisch (102) zum Anordnen der Probe, einem ein Kühlmittel enthaltendes Kühlmittelbehältnis (120) und zumindest einem Wärmeleitelement (106a, 106b), welches den Probentisch (102) mit dem Kühlmittel wärmeschlüssig verbindet, wobei die Kühlvorrichtung einen Kühlfinger (105) aufweist, der mit dem Wärmeleitelement (106a, 106b) wärmeschlüssig verbunden ist, wobei der Kühlfinger (105) einen vom Kühlmittel durchströmbaren Kanal (130, 131) aufweist, der mit dem Kühlmittelbehältnis (120) verbindbar ist. Die Erfindung betrifft weiters ein Verfahren zum Einstellen der Temperatur einer Probe in einem Ionenstrahlätzverfahren, die Schritte umfassend: (a) Befestigen einer Probe auf einem kühlbaren Probentisch (102) einer Ionenstrahlätzvorrichtung, wobei der Probentisch (102) einer Kühlvorrichtung nach einem der Ansprüche 1 bis 12 zugeordnet ist, und Justieren der Probe auf dem Probentisch ( ...

Kombinierter Ladungsteilchendetektor, Ladungsteilchenstrahlvorrichtung und Ladungsteilchendetektor

Die vorliegende Erfindung bezieht sich auf das Modulieren der Bestrahlungsbedingungen eines Ladungsteilchenstrahls mit hoher Geschwindigkeit und das Detektieren eines Signals in Synchronisation mit einer Modulationsperiode für den Zweck des Extrahieren eines Signals von einem bestimmten Ladungsteilchenstrahl, wenn eine Probe mit mehreren Ladungsteilchenstrahlen gleichzeitig bestrahlt wird, oder zum Beispiel für den Zweck des Trennens der Sekundärelektronensignale aufgrund der Ionenstrahlbestrahlung und der Sekundärelektronensignale aufgrund der Elektronenstrahlbestrahlung in einem FIB-REM-System. Die vorliegende Erfindung bezieht sich weiter auf das Zerlegen von Licht, das von zwei oder mehr Arten von Szintillatoren mit unterschiedlichen Lichtemissionseigenschaften emittiert wird, das Erfassen der jeweiligen Signalstärke und das Verarbeiten der Signale auf der Grundlage des Verhältnisses der ersten Signalstärke, wenn die Probe mit einem ersten Ladungsteilchenstrahl allein bestrahlt wird ...

VORRICHTUNG UND VERFAHREN ZUR KÜHLUNG VON PROBEN WÄHREND EINER EINER IONENSTRAHLPRÄPARATION

Alignment marking for rock sample analysis

A method for using a Focused Ion Beam and/or Scanning Electron Microscope (FIB/SEM) for etching one or more alignment markers (210, 230) on a rock sample (200), the one or more alignment markers (210, 230) being etched on the rock sample (200) using the FIB/SEM. The one or more alignment markers (210, 230) may further be filled with a platinum alloy or other suitable compositions for increasing alignment marker contrast.

MICROSCOPY IMAGING METHOD AND SYSTEM

ABSTRACT: Generally, the present disclosure provides a method and system for improving imaging efficiency for CPB systems while maintaining or improving imaging accuracy over prior CPB systems. A large field of view image of a sample is acquired at a low resolution and thus, at high speed. The low resolution level is selected to be sufficient for an operator to visually identify structures or areas of interest on the low resolution image. The operator can select one or more small areas of arbitrary shape and size on the low resolution image, referred to as an exact region of interest (XROI). The outline of the XROI is mapped to an x-y coordinate system of the image, and the CPB system is then controlled to acquire a high resolution image of only the XROI identified on the low resolution image. For 3D imaging, once the XROI is identified, each section of the sample can be iteratively imaged in the previously described manner, with the operator having the option to redefine the XROI later ...

DEVICE OF GENERATION Of a BEAM Of IONS AND PROCESS OF ADJUSTMENT OF THIS BEAM

Dispositif de génération d'un faisceau d'ions et procédé de réglage de ce faisceau. Ce dispositif comprend une source d'ions (2), un moyen (6) d'extraction des ions émis par la source, un moyen (8) d'accélération des ions ainsi extraits, un moyen (34) de sélection des ions ainsi accélérés et un système d'optique électrostatique (10) destiné à focaliser les ions ainsi sélectionnés selon un premier axe (Z1), et le dispositif comprend en outre un moyen (F) de variation de la distance (D) entre la source d'ions et le moyen d'extraction des ions, cette distance étant comptée suivant un deuxième axe (Z) qui est parallèle au premier axe et constitue l'axe du faisceau d'ions (14) émis par la source. L'invention s'applique notamment à la fabrication de nano-structures.

Modulation of ion beam angle

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle [theta] relative to a surface normal of the substrates and form gratings in the grating material.

ION BEAM ETCHING METHOD AND ION BEAM ETCHING APPARATUS

To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.

DEVICE AND METHOD FOR MANUFACTURING THREE-DIMENSIONAL FINE STRUCTURE

PROBLEM TO BE SOLVED: To provide a device for manufacturing a three-dimensional fine structure which is simple, high in throughput and accuracy, capable of manufacturing a rotation-symmetric three-dimensional fine structure having smooth surface, and to provide a manufacturing method of the above structure. SOLUTION: A sample stand (rotative stand) 1 is mounted on a precision rotation axis 32 continuously rotating the sample stand in high precision, and an optional rotation-symmetric three-dimensional fine structure is manufactured by applying an FIB deposition in an FIB chamber while making the sample stand 1 rotate continuously, or applying cutting work on upper surface or side surface like a general lathe through an FIB etching. COPYRIGHT: (C)2006,JPO&NCIPI ...

СПОСОБ ФОРМИРОВАНИЯ УПОРЯДОЧЕННЫХ ВОЛНООБРАЗНЫХ НАНОСТРУКТУР (ВАРИАНТЫ)

Использование: в способах и устройствах для формирования рисунков в виде волнообразного рельефа с периодом около 100 нм и менее. Сущность изобретения: способ формирования упорядоченной волнообразной наноструктуры предусматривает облучение GaAs потоком ионов молекулярного азота до формирования периодической волнообразной наноструктуры на поверхности GaAs с ориентацией гребней волн наноструктуры, перпендикулярной плоскости падения ионов, с последующим дополнительным распылением GaAs потоком ионов в плоскости бомбардировки, совпадающей с плоскостью бомбардировки ионами . Энергию и угол бомбардировки ионами устанавливают так, чтобы длины волн формирующихся волнообразных наноструктур при однократном облучении ионами и арсенида галлия совпадали. Второй вариант способа формирования упорядоченной волнообразной наноструктуры предусматривает облучение поверхности кремния потоком ионов О + 2 до формирования малоамплитудной волнообразной наноструктуры на глубине распыления, отвечающей началу роста ...

GERÄT MIT FOKUSSIERTEM IONENSTRAHL

Bereitgestellt wird ein Gerät mit fokussiertem Ionenstrahl, welches vor der tatsächlichen Bestrahlung mit einem fokussierten Ionenstrahl zu erfassen in der Lage ist, in welcher Richtung ein Strahl den Probentisch, auf welchem mindestens eine Probe befestigt ist, erreicht. Ein Gerät mit fokussiertem Ionenstrahl (100) umfasst: eine fokussierte Ionenstrahlsäule (20), welche dafür ausgelegt ist, um eine Probe (200) mit einem fokussierten Ionenstrahl (20A) zu bestrahlen; einen Probentisch (51), auf welchem die Probe zu platzieren ist; eine Probenplattform (50), auf welcher der Probentisch zu platzieren ist und welche zumindest in einer horizontalen Richtung und einer Höhenrichtung beweglich ist; einen Speicher (6M), welcher dafür ausgelegt ist, um im Voraus dreidimensionale Daten an dem Probentisch und eine Bestrahlungsachse des fokussierten Ionenstrahls zu speichern, wobei die dreidimensionalen Daten mit Plattformkoordinaten der Probenplattform verknüpft sind; eine Anzeige (7); und eine Anzeigesteuerung ...

Electrostatic discharge damage to a magnetoresistive read/write head is prevented during focused ion beam machining

Electrostatic discharge damage is prevented during a focused ion beam machining operation by pre-coating the surface to be machined with a conductive film coating which extends to an earthed substrate surface. Independent claims are also included for the following: (i) production of a magnetoresistive read/write head by photolithographic formation of the head on a slide piece block surface, application of a conductive film on the head and the block surface, focused ion beam machining of part of the head, plasma chemical removal of the conductive film and fine grinding of the block to form an air bearing surface; (ii) a magnetoresistive read/write head produced by the above process (i); and (iii) a magnetoresistive read/write head for use in a hard disk data storage unit. Preferred Features: The conductive film is a carbon film, a silicon/carbon multilayer film or a silicon carbide film.

Ion beam etching method and ion beam etching apparatus

PROCEDURE FOR THE REGULATION OF AN ION BEAM

PROCEDURE AND DEVICE FOR THE TREATMENT OF ION BEAMS OF SURFACES

DEVICE AND PROCEDURE FOR THE CONTROLLED MANUFACTURING OF SEMICONDUCTORS OF MEANS PARTICLE BEAMS

Surface plasmon enhanced illumination system

DEVICE FOR GENERATING AN ION BEAM

Dispositif de génération d'un faisceau d'ions. Ce dispositif comprend une source d'ions (2), un moyen (6) d'extraction des ions émis par la source, un moyen (8) d'accélération des ions ainsi extraits, un moyen (34) de sélection des ions ainsi accélérés et un système d'optique électrostatique (10) destiné à focaliser les ions ainsi sélectionnés selon un premier axe (Z1), et le dispositif comprend en outre un moyen (F) de variation de la distance (D) entre la source d'ions et le moyen d'extraction des ions, cette distance étant comptée suivant un deuxième axe (Z) qui est parallèle au premier axe et constitue l'axe du faisceau d'ions (14) émis par la source. L'invention s'applique notamment à la fabrication de nano-structures.

AUTOMATED SLICE MILLING FOR VIEWING A FEATURE

USE OF ION BEAM ETCHING TO GENERATE GATE-ALL-AROUND STRUCTURE

Various embodiments of the present invention relate to methods and an apparatus for performing anisotropic ion beam etching to form arrays of channels. The channels may be formed in a semiconductor material, and may be used in a gate-all-around device. Generally speaking, a patterned mask layer is provided over a layer of the semiconductor material. Ions are directed toward the substrate while the substrate is positioned in two particular orientations with respect to an ion trajectory. The substrate switches between these orientations such that ions impinge upon the substrate from two opposite angles. The patterned mask layer shadows/protects the underlying semiconductor material such that the channels are formed in intersecting shadowed regions. COPYRIGHT KIPO 2016 ...

Information acquisition apparatus, cross section evaluating apparatus, and cross section evaluating method

The invention provides a cross section evaluating apparatus capable of analyzing the cross sectional structure in a state where the temperature of the specimen is regulated. There is disclosed an information acquisition apparatus comprising a stage for placing the specimen, temperature regulation means for regulating the temperature of the specimen, exposure means for exposing a surface, of which information is desired, of the specimen, and information acquisition means for acquiring information relating to the surface exposed by the exposure means.

MANUFACTURING METHOD OF ELECTRON SOURCE

An electron gun with a truncated-cone-shaped cathode with uniform emission current density is efficiently manufactured. A manufacturing method of a cathode electron gun equipped with a supply source for diffusing oxide of a metal element on a single crystal needle of tungsten or molybdenum includes steps of forming a truncated-cone-shape having a flat plane at a single crystal edge serving as the cathode by machining beforehand, thereafter thinning and removing a front layer of the flat plane by a focused gallium ion beam, and re-flattening it.

ION BEAM ETCHING METHOD AND ION BEAM ETCHING APPARATUS

An ion beam etching method for processing three dimensional nanostructures, wherein a pre-fabricated nanostructure (12) formed on a substrate (8) is etched three dimensionally by bombarding the nanostructure in vacuum conditions by a beam of low-energy medium-mass ions (5) at a glancing incident angle (α) with respect to the substrate while rotating the nanostructure about an axis (N) normal to the substrate. According to the invention, the energy per mass of the ions is within a range of 0.0025 - 0.0225 keV/amu; and the incident angle (α) of the ion beam (5) with respect to the substrate (8) is within a range of 30 - 50 degrees, preferably about 40 degrees.

Minute three dimensional structure producing apparatus and method

A structure having arbitrary rotational symmetry is produced by attaching a sample stage (turntable) to a precision rotational shaft that is continuously rotated as high precision, performing FIB deposition inside an FIB chamber while causing continuous rotation of the sample stage, or performing cut-way processing from a side surface or upper surface, like a general purpose lathe, using FIB etching.

Apparatus and method for controlled particle beam manufacturing of semiconductors

ALIGNMENT MARKING FOR ROCK SAMPLE ANALYSIS

A method for using a Focused Ion Beam and/or Scanning Electron Microscope (FIB/SEM) for etching one or more alignment markers (210, 230) on a rock sample (200), the one or more alignment markers (210, 230) being etched on the rock sample (200) using the FIB/SEM. The one or more alignment markers (210, 230) may further be filled with a platinum alloy or other suitable compositions for increasing alignment marker contrast.

Method for forming wavy nanostructures

ION SOURCES, SYSTEMS AND METHODS

The method of formation of coherent wavy nanostructures (versions)

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed.

METHOD AND DEVICE FOR ION BEAM PROCESSING OF SURFACES

The invention relates to a method and device for ion beam processing of surfaces, whereby the substrate is positioned facing an ion beam and a new technologically-defined pattern of properties is established. According to said method, the current geometrical effect pattern of the ion beam on the surface (15) of the substrate (8) is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties and depending on the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. Said device comprises a substrate support, for holding at least one substrate (8), which can be moved along an Y-axis (4) and an X-axis (6) and an ion beam source (1), for generating an ion beam which is perpendicular to the surface (15) to be processed of the substrate (8) in the Z-axis (11) or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source (1) and the surface (15) to be ...

SURFACE PLASMON ENHANCED ILLUMINATION SYSTEM

Methods and apparatus for producing small, bright nanometric light sources from apertures that are smaller than the wavelength of the emitted light. Light (437) is directed at a surface layer (435) of metal onto a light barrier structure that includes one or more apertures each of which directs a small spot of light onto a target. The incident light excites surface plasmons (452) "electron density fluctuations" in the top metal surface layer and this energy couples through the apertures to the opposing surface where it is emitted as light from the apertures of from the rims of the apertures. Means are employed to prevent or severely limit the extent to which surface plasmons are induced on the surface at the aperture exit, thereby constraining the resulting emissions to small target areas. The resulting small spot illunination may be used to increase the resolution, photolithographic processes, and storage capacity of microscopes.

COMBINATION LASER AND CHARGED PARTICLE BEAM SYSTEM

A combined laser and charged particle beam system. A pulsed laser enables milling of a sample at material removal rates several orders of magnitude larger than possible for a focused ion beam. In some embodiments, a scanning electron microscope enables high resolution imaging of the sample during laser processing. In some embodiments, a focused ion beam enables more precise milling of the sample. A method and structure for deactivating the imaging detectors during laser milling enables the removal of imaging artifacts arising from saturation of the detector due to a plasma plume generated by the laser beam. In some embodiments, two types of detectors are employed: type-1 detectors provide high gain imaging during scanning of the sample with an electron or ion beam, while type-2 detectors enable lower gain imaging and endpoint detection during laser milling.

Combination Laser and Charged Particle Beam System

A combined laser and charged particle beam system. A pulsed laser enables milling of a sample at material removal rates several orders of magnitude larger than possible for a focused ion beam. In some embodiments, a scanning electron microscope enables high resolution imaging of the sample during laser processing. In some embodiments, a focused ion beam enables more precise milling of the sample. A method and structure for deactivating the imaging detectors during laser milling enables the removal of imaging artifacts arising from saturation of the detector due to a plasma plume generated by the laser beam. In some embodiments, two types of detectors are employed: type-1 detectors provide high gain imaging during scanning of the sample with an electron or ion beam, while type-2 detectors enable lower gain imaging and endpoint detection during laser milling.

Method and device for a carrier proximity mask

A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate.

Decelerating and focusing ion beam device

A decelerating and focusing ion beam device is provided with an ion source, a focusing lens system having a plurality of focusing lenses and a multiple decelerating lens system having a plurality of decelerating lenses. It is possible to realize selective super-refined crystal growth and superficial etching with very high accuracy.

Forming a vertical surface

A miller, a non-transitory computer readable medium, and a method. The miller may include an ion beam column that may be configured to form a vertical surface in an object by applying a milling process that may include forming a vertical surface by irradiating, for a certain period of time, an area of an upper surface of an object by a defocused ion beam that comprises multiple rays. During the certain period of time and at a plane of the upper surface of the object, a majority of the multiple rays are closer to an edge of the defocused ion beam than to a center of the defocused ion beam. The focal plane of the defocused ion beam is located below the upper surface of the object.

METHOD FOR SAMPLE ORIENTATION FOR TEM LAMELLA PREPARATION

A substrate is alignable for ion beam milling or other inspection or processing by obtaining an electron channeling pattern (ECP) or other electron beam backscatter pattern from the substrate based on electron beam backscatter from the substrate. The ECP is a function of substrate crystal orientation and tilt angles associated with ECP pattern values at or near a maximum, minimum, or midpoint are used to determine substrate tilt. Such tilt is then compensated or eliminated using a tilt stage coupled the substrate, or by adjusting an ion beam axis. In typical examples, circuit substrate “chunks” are aligned for ion beam milling to reveal circuit features for evaluation of circuit processing.

Method for structuring an object with the aid of a particle beam apparatus

Methods for structuring objects with a particle beam apparatus are disclosed.

APPARATUS AND METHOD FOR CONTROLLED PARTICLE BEAM MANUFACTURING

A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Proximity CVD deposition

ION SOURCES, SYSTEMS AND METHODS

Implants

Charged particle beam source, surface processing apparatus and surface processing method

TEXTURED SURFACES FOR BREAST IMPLANTS

The invention provides new devices for implantation in a patient having irregular textured surfaces, which devices show significantly improved cellular response compared to conventional smooth and textured implants, indicating that significantly improved biocompatibility would be achieved in vivo. Methods for making such new devices and surface textures are also disclosed.

DEVICE FOR GENERATING AN ION BEAM

... ²²²Dispositif de génération d'un faisceau d'ions. Ce dispositif comprend une ²source d'ions (2), un moyen (6) d'extraction des ions émis par la source, un ²moyen (8) d'accélération des ions ainsi extraits, un moyen (34) de sélection ²des ions ainsi accélérés et un système d'optique électrostatique (10) destiné ²à focaliser les ions ainsi sélectionnés selon un premier axe (Z1), et le ²dispositif comprend en outre un moyen (F) de variation de la distance (D) ²entre la source d'ions et le moyen d'extraction des ions, cette distance étant ²comptée suivant un deuxième axe (Z) qui est parallèle au premier axe et ²constitue l'axe du faisceau d'ions (14) émis par la source. L'invention ²s'applique notamment à la fabrication de nano-structures.² ...

METHOD OF FABRICATING NANO-TIPS WITH CONTROLLED PROFILE

A nanotip, is fabricated by modifying a precursor nanotip having an apex and a shank by applying an electric field in the presence of a reactive gas to perform field-assisted etching wherein atoms are preferentially removed from the shank by chemical interaction with the reactive gas, and controlling the reactive gas pressure and/or tip voltage to vary the electric field so as to promote field evaporation of apex atoms during fabrication of the nanotip and thereby control the overall profile of the resulting nanotip. The method permits shaping of the overall tip profile.

Ion source, system and method

Focused ion beam apparatus

A focused ion beam apparatus (100) includes: a focused ion beam lens column (20); a sample table (51); a sample stage (50); a memory (6M) configured to store in advance three-dimensional data on the sample table and an irradiation axis of the focused ion beam, the three-dimensional data being associated with stage coordinates of the sample stage; a display (7); and a display controller (6A) configured to cause the display to display a virtual positional relationship between the sample table (51v) and the irradiation axis (20Av) of the focused ion beam, which is exhibited when the sample stage is operated to move the sample table to a predetermined position, based on the three-dimensional data on the sample table and the irradiation axis of the focused ion beam.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.A system, comprising: an ion source capable of interacting with a gas to generate an ion beam that can interact with a sample to cause multiple different types of particles to leave the sample; and at least one detector configured to detect at least two different types of particles of the multiple different types of particles, wherein the multiple different types of particles are selected from the group consisting of secondary electrons, Auger electrons, secondary ions, secondary neutral particles, primary neutral particles, scattered ions and photons.

ICE LAYERS IN CHARGED PARTICLE SYSTEMS AND METHODS

METHODS AND SYSTEMS FOR MEASURING A CHARACTERISTIC OF A SUBSTRATE OR PREPARING A SUBSTRATE FOR ANALYSIS

Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

A SOURCE OF LIQUID METAL IONS AND A METHOD FOR CONTROLLING THE SOURCE

The invention provides a system and a method for controlling a source of liquid metal ions, the source comprises a tip a first electrode and a second electrode, the method includes the steps of: (i) maintaining the first electrode at a first voltage level range and maintaining the second voltage at a second voltage at a second voltage range, such as to extract metal ions formed on a tip of the source, during an active mode of operation of the source; and (ii) maintaining the first electrode at a third voltage level range and maintaining the second voltage at a fourth voltage level range, such as to substantially reduce an extraction of metal ions from the tip, during an idle mode of operation of the source. The third voltage level range and, alternatively or additionally, the fourth voltage level ranges does not include zero voltage level. The first voltage level range differs than the third voltage level range.

METHOD OF MANUFACTURING EMITTER, EMITTER, AND FOCUSED ION BEAM APPARATUS

A method of manufacturing an emitter is disclosed. The method enables a crystal structure of the tip of the front end of the emitter to return to its original state with high reproducibility by rearranging atoms in a treatment, and enables a long lasting emitter to be attained by suppressing extraction voltage rise after the treatment. As a method of manufacturing an emitter having a sharpened needle-shape, the method includes: performing an electropolishing process for the front end of an emitter material having conductivity to taper toward the front end; and performing an etching to make the number of atoms constituting the tip of the front end be a predetermined number or less by further sharpening the front end through an electric field-induced gas etching having constantly applied voltage, while observing the crystal structure of the front end, by a field ion microscope, in a sharp portion having the front end at its apex.

Method and Device for Ion Beam Processing of Surfaces

A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or ...

FOCUSED ION BEAM ETCHING IMPROVED BY 1,2-DIIODOETHANE

PROBLEM TO BE SOLVED: To solve problems generated in the use of iodine, such as the harmfulness of iodine, the clogging of a feed pipe, the sticking to a valve seat by directing a vapor containing 1,2-diiodoethane molecule to a sample to improve the etching by a focused ion beam(FIB). SOLUTION: A sample structure 300 to be etched is arranged in a vacuum chamber. The vapor containing 1,2-diiodoethane (ICH2CH2I) molecule 305-315, 325-340 is directed to a region to be etched by an injection needle 320. 1,2- Diiodoethane molecule 305-315, 325-340 is changed by being bombarded with the ion beam 350 to generate free iodine atom or ion. The free iodine atom or ion is combined with metallic molecule 355-365 to lower the surface bond energy and to increase etching speed. 1,2-Diiodoethane is more simple in handling than iodine and is not subject to the dangerous substance deal in transportation. COPYRIGHT: (C)1998,JPO ...

FOCUSED ION BEAM DEVICE

PURPOSE: To perform a quick and accurate sample shifting to increase the operation efficiency. CONSTITUTION: When a state of periodic change exists on the surface of a sample, the endmost bit portion is used as a reference point. For shifting operation, the position of the sample 9 is so moved as to permit the reference point to be brought to a center of the scanning region of an ion beam 8. Further, when the sample 9 is moved, the frequency value of change in the detection signal from a secondary electron detector 7 generated during the shift of the sample 9 is counted and the amount of shift is divided by this frequency value to determine a reference unit quantity. The shifting of the sample 9 is performed by setting the distance from the reference point to a goal position as a multiple of the reference unit quantity. After shifting, when the voltage applied to a deflection electrode 5 is returned back to the original level and display is made of the surface of the sample 9, a display ...

Sample position control in focussed ion beam system e.g. for faulty bit analysis of semiconductor memory - allows automatic movement of sample w.r.t. reference point calculated by detection of secondary electrons released by irradiation by ion beam

The vacuum chamber (1) has an ion source (2) generating an emission which passes through electrodes (3), a condenser lens (4), deflection electrodes (5), and a focussing lens (6). A sample (9) is positioned on a table (10) to receive the focussed beam. A control unit (14) generates commands to achieve the required position. Secondary electrons are emitted from the surface and are detected (7) and signals fed back to the controller (17). A display (16) shows the condition of the sample surface. The controller generates outputs to the units (11-13) controlling the process. ADVANTAGE - Quick and accurate control of target positioning.

Verfahren zur Lokalisierung von Fluoreszenzmarkers

Verfahren und Vorrichtung zum Bearbeiten einer Oberfläche eines Substrates mittels eines Teilchenstrahls

Diese Erfindung betrifft ein Verfahren und eine Vorrichtung zum Bearbeiten einer Oberfläche eines Substrates mittels eines Teilchenstrahls. Das Verfahren weist ein Bestrahlen der Oberfläche (302) des Substrates (114) auf, wobei in einem ersten Bereich (308) der Oberfläche (302) des Substrates (114) die Oberfläche (302) des Substrates (114) mit dem Teilchenstrahl (104) bearbeitet wird, der ungepulst (306) auf die Oberfläche (302) des Substrates (114) trifft; und wobei in einem zweiten Bereich (310) der Oberfläche (302) des Substrates (114) die Oberfläche (302) des Substrates (114) mit dem Teilchenstrahl (104) bearbeitet wird, der gepulst (304) auf die Oberfläche (302) des Substrates (114) trifft.

Method and Apparatus for Rapid Preparation of Multiple Specimens for Transmission Electron Microscopy

A method and apparatus for in-situ lift-out rapid preparation of TEM samples. The invention uses adhesives and/or spring-loaded locking-clips in order to place multiple TEM-ready sample membranes on a single TEM support grid and eliminates the use of standard FIB-assisted metal deposition as a bonding scheme. Therefore, the invention circumvents the problem of sputtering from metal deposition steps and also increases overall productivity by allowing for multiple samples to be produced without opening the FIB/SEM vacuum chamber.

Particle beam device with deflection system

A particle beam device includes a particle beam generator, an objective lens, and first and second deflection systems for deflecting the particle beam in an object plane defined by the objective lens. In a first operating mode, the first deflection system generates a first deflection field and the second deflection system generates a second deflection field. In a second operating mode, the first deflection system generates a third deflection field and the second deflection system generates a fourth deflection field.

Semiconductor device

According to one embodiment, a semiconductor device comprises a circuit portion, wells, and dummy wells. A circuit portion is formed on an upper surface of a semiconductor substrate of a first conductivity type. The wells are of a second conductivity type different from the first conductivity type. Each of wells is formed in the semiconductor substrate on an upper surface side, constitutes the circuit portion, and functions as an element. The dummy wells are of the second conductivity type. Each of the dummy wells is formed in the semiconductor substrate on the upper surface side, does not constitute the circuit portion, and does not function as an element.

Encapsulation of Electrodes in Solid Media for use in conjunction with Fluid High Voltage Isolation

An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.

Cooled manipulator tip for removal of frozen material

The disclosed apparatus enables attachment to a sample to be excised from a frozen bulk sample, the transfer of the excised sample from the bulk sample to a separate cooled support structure by means of a manipulator tip that can be cooled and maintained at a temperature below that of vitreous ice and which provides both an active cooling path and cryogenic shielding to maintain the temperature of the excised sample below that of vitreous ice. The cryogenic shielding also helps minimize contamination of the cooled sample by condensation of volatile material. A method is disclosed for extracting a portion of a frozen sample, comprising attaching a thermally-isolated cooled manipulator tip to the sample with vapor deposition and removing a portion of the sample affixed to the tip without changing phase of the portion of the sample being removed, with a focused ion beam.

Charged particle beam device provided with automatic aberration correction method

Disclosed is an aberration measurement method of a charged particle beam device provided with an aberration corrector ( 4 ). The method is characterized by: when measuring aberration, (A) the number of pixels or the resolution is changed of a first image and a second image that are benchmarks when measuring field of view offset, and after determining the destination of movement resulting from a rough field of view offset, the number of pixels or the resolution of the first image and the second image are set to the same conditions, and the amount of field of view offset is measured precisely, or (B) a sample having lines in the horizontal direction and in the vertical direction is one-dimensionally scanned, and the amount of movement is measured from the signal position offset. As a result, in a charged particle beam device provided mounted with an aberration corrector, it becomes possible to provide a highly precise aberration measurement method that is not to the detriment of measurement time.

Device analysis

Performing an analysis of an electronic device sample by measuring a property at a plurality of points of said electronic device sample, and in advance of said analysis subjecting said plurality of points to at least one treatment that increases the difference in said property between at least two elements of said electronic device sample.

Sample preparation method and apparatus

Provided is a sample preparation method, including: while displaying a SEM image of a first cross-section of a sample on a display screen, subjecting the first cross-section to etching processing by scanning and irradiation of a focused ion beam, thereby exposing a second cross-section; and while displaying a SEM image of another cross-section on the display screen, changing a scanning direction of the focused ion beam while performing the scanning and irradiation of the focused ion beam and subjecting the second cross-section to etching processing, thereby exposing a desired cross-section of the sample.

Liquid metal ion source and secondary ion mass spectrometric method and use thereof

A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ≧190 U and, on the other hand, another metal with an atomic weight ≦90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

Sample observation method, sample preparation method, and charged particle beam apparatus

A sample observation method including: placing a sample stage at a first tilt angle with respect to a charged particle beam, and irradiating an observation surface of a sample with the charged particle beam to acquire a first charged particle image; tilting the sample stage to a second tilt angle different from the first tilt angle about a first sample stage axis, and irradiating the observation surface with the charged particle beam to acquire a second charged particle image; tilting the sample stage to a tilt angle at which an area of the observation surface in the acquired charged particle image is larger between the first charged particle image and the second charged particle image; and irradiating the observation surface with the charged particle beam to observe the observation surface.

Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer

A method and apparatus for actively monitoring conditions of a plasma source for adjustment and control of the source and to detect the presence of unwanted contaminant species in a plasma reaction chamber. Preferred embodiments include a spectrometer used to quantify components of the plasma. A system controller is provided that uses feedback loops based on spectral analysis of the plasma to regulate the ion composition of the plasma source. The system also provides endpointing means based on spectral analysis to determine when cleaning of the plasma source is completed.

Sample preparation method

Provided is a sample preparation method, including: processing a sample by an ion beam, thereby forming a thin film portion having a thickness that allows an electron beam to transmit therethrough; supplying deposition gas to the thin film portion; and irradiating the thin film portion with the electron beam, thereby forming a deposition film on a front surface of the thin film portion and a deposition film on a rear surface of the thin film portion opposed to the front surface.

Energy beam processing apparatus and energy beam processing method

An energy beam processing apparatus cutting an interconnection by irradiating the interconnection with an energy beam while scanning, the energy beam processing apparatus including an irradiation unit which irradiates the interconnection with the energy beam while scanning; a measurement unit which measures a resistance value of the interconnection; and a control unit which controls a scan and an irradiation of the energy beam by the irradiation unit, the control unit controlling at least one of a scan rate and an irradiation intensity of the energy beam in accordance with a resistance value measured by the measurement unit, and controlling the irradiation unit to stop the irradiation of the energy beam when the resistance value measured by the measurement unit exceeds a prescribed value.

Specimen holder for holding a semiconductor device during a sample preparation procedure carried out using first and second sample preparation apparatuses

A specimen holder is configured to hold, during a sample preparation procedure carried out using first and second sample preparation apparatuses, a semiconductor device to be analyzed using an electron microscope. The specimen holder includes a holding portion having a support configured to support the semiconductor device; and a supporting portion configured to releasable support the holding portion. The supporting portion includes an engaging element configured to couple the specimen holder into the first and second sample preparation apparatuses during the sample preparation procedure, and a guide configured to enable the holding portion to slide within the guide and vary a position of the holding portion with respect to the supporting portion.

System and Method for Ex Situ Analysis of a Substrate

A method and system for creating an asymmetrical lamella for use in an ex situ TEM, SEM, or STEM procedure is disclosed. The shape of the lamella provides for easy orientation such that a region of interest in the lamella can be placed over a hole in a carbon film providing minimal optical and spectral interference from the carbon film during TEM, SEM, or STEM procedure of chemical analysis.

Ion Beam Sample Preparation Apparatus and Methods

Disclosed are embodiments of an ion beam sample preparation apparatus and methods. The apparatus has disposed in a vacuum chamber at least one tilting ion beam irradiating means with intensity control, a rotation stage with rotation control, a sample holder, and an adjustable positioning stage that has two axes of positional adjustment that are operable to move the region of the sample being prepared by the ion beam relative to the ion beam. The apparatus may also include a vacuum-tight optical window for observing the sample and a shutter for protecting the optical window from debris while the sample is prepared in the ion beam.

Ion beam delayering system and method, topographically enhanced delayered sample produced thereby, and imaging methods and systems related thereto

Described are various embodiments of an ion beam delayering system and method, topographically enhanced sample produced thereby, and imaging methods and systems related thereto. In one embodiment, a method comprises: identifying at least two materials in an exposed surface of the sample and predetermined operational characteristics of an ion beam mill that correspond with a substantially different ion beam mill removal rate for at least one of the materials; operating the ion beam mill in accordance with the predetermined operational characteristics to simultaneously remove the materials and introduce or enhance a topography associated with the materials and surface features defined thereby; acquiring surface data; and repeating the operating and acquiring steps for at least one more layer.

METHOD FOR PREPARING CROSS-SECTIONS BY ION BEAM MILLING

The disclosure provides a method for preparing a cross-section of a sample by milling with a focused ion beam. The cross-section is to be prepared at a pre-defined position. The method includes excavating a trench by milling in a first milling direction. The first milling direction leads away from the position of the cross-section to be prepared. The method also includes excavating the cross-section by enlarging the trench by milling in the reversed milling direction. The second milling direction leads towards the position of the cross-section to be prepared, whereupon the milling is completed at the position where the cross-section is to be cut. The desired largest milling depth is achieved at the completion of this milling step. 1. A method for preparing a cross-section at a position of a sample , the method comprising:a) excavating a trench by milling in a first milling direction which leads away from the position of the sample; andb) excavating the cross-section of the sample by enlarging the trench by milling in a second milling direction which is the reverse direction of the first milling direction and which leads toward the position of the sample, whereupon milling is completed at the position of the sample,wherein a largest milling depth is achieved at the completion of b).2. The method of claim 1 , further comprising claim 1 , before a) claim 1 , excavating an initial trench by milling in the second milling direction.3. The method of claim 2 , wherein b) comprises applying an ion dose which increases with decreasing distance of the ion beam from the position of the sample.4. The method of claim 2 , wherein an ion dose is applied during a) which is different from an ion dose applied when excavating the initial trench.5. The method of claim 4 , wherein:excavating the initial trench comprises applying a first ion dose suitable for coarse removal of sample material;a) comprises applying a second ion dose suitable for removal of redeposited material; andb) ...

METHOD AND APPARATUS FOR A HIGH RESOLUTION IMAGING SYSTEM

The present invention provides apparatus for an imaging system comprising a multitude of imaging elements upon a substrate. In some embodiments the substrate may be approximately round with a radius of approximately one inch. Various methods relating to using and producing an imaging system are discussed. 1) An imaging apparatus comprising:a first apparatus comprising a first substrate with a multitude of imaging elements arrayed thereupon, wherein the imaging elements are capable of emitting an imaging signal from their structure to a material sensitive to their emissions on a surface in a vicinity of the first apparatus, wherein the imaging elements are emission tips formed into silicon deposited into trenches, and wherein the emission tips protrude from a backside of a base layer into a front-side of which the trenches are etched, and wherein there are more than 1000 emission tips in the first apparatus;a support component for a second substrate to be processed by the imaging apparatus;an alignment feature and alignment apparatus to measure the alignment feature; anda processor operant to collect data from imaging apparatus components, process the data and control imaging apparatus components based on the data.2) The imaging apparatus of further comprising a cooling device in thermal communication with the second substrate.3) The imaging apparatus of further comprising a piezoelectric actuating device to raster the imaging apparatus.4) The imaging apparatus of wherein the rastering comprises at least ten steps within a distance separating two of the emission tips.5) A method of forming an imaging system comprising: etching a plurality of trenches into a base layer;', 'partially filing the trenches with conformal dielectric films;', 'filling the trenches with polysilicon;', 'finishing processing of an integrated circuit with metal layers;', 'processing the integrated circuit to thin a backside of the base layer, wherein the thinning exposes a dielectric film of ...

Apparatus with Two or More Particle Beams for Processing a Specimen

An apparatus for processing a specimen with two or more particle beams, wherein the specimen has a milled side that is processed by a first particle beam and observed by a second particle beam. The specimen is milled during a first milling operation by the first particle beam with the specimen in a first position. Thereafter, the specimen tilts in a second position around an axis of tilt of the specimen. Thereafter, the specimen is milled during a second milling operation. Milling can be performed during continuous tilting of the specimen around the axis of tilt. The axis of tilt of the specimen intersects the milled side. In all the aforementioned positions of the specimen, the second particle beam impinges on the milled side, which enables monitoring of the milling in real time. 1. Apparatus for processing a specimen , the apparatus comprising at least two sources of particle beams which pass through first and second columns , and where the first column is equipped with a first electric or electromagnetic scanning device for generating at least two force fields , which are approximately perpendicular to one another , and where the second column is equipped with a second electric or electromagnetic scanning device for generating at least two force fields , which are approximately perpendicular to one another , and where axes of the columns are intersecting or skew , while lines of force of the force fields of the first electric or electromagnetic scanning device deviate from the axis of the first column by an angle of 90° or near 90° and lines of force of the force fields of the second electric or electromagnetic scanning device deviate from the axis of the second column by an angle of 90° or near 90° , and which further contains a first set of manipulators consisting of at least one manipulator for attachment of a specimen , the first set of manipulators being tiltable at least around one axis which is identical with an axis of tilt of the specimen attached to ...

DEVICE PROCESSING METHOD AND DEVICE PROCESSING APPARATUS

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate. 1. A device processing method comprising steps of:fabricating a first structure using an ion beam under a first condition in a first region on a substrate;measuring a size of the first structure which is fabricated;comparing the measurement result with design data;determining a second condition from the comparison result; andfabricating a second structure using the ion beam under the second condition in a second region on the substrate.2. The device processing method according to claim 1 , whereinthe second structure is a structure constituting an MEMS, and is fabricated on the MEMS in the middle of manufacturing in the second region.3. The device processing method according to claim 1 , whereinthe step of measuring the size of the first structure includes exposing a cross section of the first structure by etching using the ion beam and performing size measurement of the first structure using the cross section.4. The device processing method according to claim 1 , whereinthe step of measuring the size of the first structure includes performing the size measurement of the first structure using an SEM or an SIM.5. The device processing method according to claim 1 , whereinthe design data includes size data of an MEMS structure and an allowable range of the size data, andthe step of comparing the measurement result with the design data includes automatically ...

TEM SAMPLE PREPARATION

An improved method of preparing ultra-thin TEM samples that combines backside thinning with an additional cleaning step to remove surface defects on the FIB-facing substrate surface. This additional step results in the creation of a cleaned, uniform “hardmask” that controls the ultimate results of the sample thinning, and allows for reliable and robust preparation of samples having thicknesses down to the 10 nm range.

METHOD AND APPARATUS FOR CAPTURING VOLUME INFORMATION OF THREE-DIMENSIONAL SAMPLES

Methods and apparatuses for capturing volume information of microscopic samples include a microscope system having at least one particle beam column, by which a beam of focused, charged particles can be generated, and an in-situ microtome, i.e., a microtome integrated in the microscope system. The method cam include a) providing a sample including a volume of interest (VOI); b) setting a cut surface lying within the sample; c) defining the set cut surface as processing surface; d) exposing the cut surface by virtue of ablating sample material by cutting with the in-situ microtome; and e) processing the sample with the particle beam, wherein the start point of the processing is disposed on the exposed processing surface. 1. A method of using a microscope system that comprises an in-situ microtome and a first particle beam column configured to generate a first beam of focused , charged particles , the method comprising:defining a cut surface lying within a sample as a processing surface;using the microtome to remove sample material to expose the cut surface; andprocessing the sample with a first particle beam of focused, charged particles generated by the first particle beam column,wherein a start point of the processing is on the exposed processing surface.2. The method of claim 1 , further comprising imaging the sample.3. The method of claim 2 , wherein:the microscope system further comprises a second particle beam column configured to generate a second beam of focused, charged particles; andthe method further comprises using the second particle beam to image the sample.4. The method of claim 3 , wherein:the first particle beam column has first optical axis;the second particle beam column has a second optical axis;the first and second optical axes define a first angle relative to each other;the in-situ microtome generates a cut surface in the sample; andthe method further comprises rotating the sample about an axis of rotation that extends perpendicular to the first ...

AUTOMATED SLICE MILLING FOR VIEWING A FEATURE

A method and apparatus for performing a slice and view technique with a dual beam system. The feature of interest in an image of a sample is located by machine vision, and the area to be milled and imaged in a subsequent slice and view iteration is determined through analysis of data gathered by the machine vision at least in part. A determined milling area may be represented as a bounding box around a feature, which dimensions can be changed in accordance with the analysis step. The FIB is then adjusted accordingly to slice and mill a new face in the subsequent slice and view iteration, and the SEM images the new face. Because the present invention accurately locates the feature and determines an appropriate size of area to mill and image, efficiency is increased by preventing the unnecessary milling of substrate that does not contain the feature of interest. 120-. (canceled)21. A method for observing a feature within a substrate using charged particle beam imaging , comprising:(a) directing an ion beam toward the substrate to expose a cross section including the feature;(b) directing a charged particle beam toward the cross section to obtain image information about the cross section;(c) analyzing the image information of the feature to determine parameters for carrying out an exposing of a subsequent cross section, the subsequent cross section including the feature, wherein the parameters include a size and shape of an area to be milled, a position of the substrate relative to the ion beam and the charged particle beam, or a combination thereof; and(d) carrying out the exposing of the subsequent cross section.22. The method of claim 21 , wherein the charged particle beam comprises an electron beam.23. The method of claim 21 , wherein the charged particle beam comprises an ion beam.24. The method of claim 21 , in which analyzing the image information of the feature to determine parameters for carrying out an exposing of a subsequent cross section includes finding a ...

Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions

An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another.

Apparatus for Preparing a Sample for Microscopy

An apparatus for preparing a sample for microscopy is provided that has a milling device that removes material from a sample in order to thin the sample. An electron beam that is directed onto the sample is present along with a detector that detects when the electron beam has reached a preselected threshold transmitted through or immediately adjacent the sample. Once the detector detects the electron beam has reached this threshold, the milling device terminates the milling process. 1. An apparatus for thinning a sample for electron microscopy , comprising: (a) directed at a target surface of said sample; and', '(b) causing material to be removed from said target surface of said sample;, '(i) an ion beam generator which emits an ion beam(ii) an electron beam generator which emits an electron beam directed at said target surface of said sample; and (a) in electronic communication with said ion beam generator;', '(b) mounted opposite said electron beam generator with respect to said sample;', '(c) receiving electrons from said electron beam when said electron beam meets at least one of the conditions of: passing through and passing adjacent said sample; and', (i) the quantum of electrons received thereby; and', '(ii) the degree to which said ion beam has removed material from said sample;, '(d) generating an electronic signal, communicated to said ion beam generator, indicative of], '(iii) an electron beam detectorwherein said ion beam generator terminates generation of said ion beam when said electronic signal meets a preselected quantitative threshold indicative of the degree to which said ion beam has removed material from said sample.2. The apparatus as set forth in claim 1 , wherein the ion beam is generated from a gas selected from the group consisting of: argon claim 1 , xenon and neon.3. The apparatus as set forth in claim 1 , wherein said sample further comprises a leading edge and top and bottom surfaces adjacent thereto and said ion beam is directed to said ...

OPTICAL SENSOR, MANUFACTURING METHOD THEREOF, AND FLUID ANALYSIS METHOD USING THE SAME

A method for manufacturing an optical sensor includes forming a reflective metal layer on a substrate, forming an insulator layer on the reflective metal layer, inducing self-assembly of a metal nanostructure layer on the insulator layer, and selectively etching the insulator layer through a reactive ion etching process to form a plurality of pillars and a plurality of spaces defined by the plurality of pillars. The method for manufacturing a plasmonic optical sensor according to this embodiment facilitates the formation of nanostructures difficult to pattern and form on the large scale at a low cost, and provides a plasmonic optical sensor with repeatability. 1. A method for manufacturing an optical sensor , comprising:forming a reflective metal layer on a substrate;forming an insulator layer on the reflective metal layer;inducing self-assembly of a metal nanostructure layer on the insulator layer; andselectively etching the insulator layer to form a plurality of pillars and a plurality of spaces defined by the plurality of pillars.2. The method for manufacturing an optical sensor according to claim 1 , wherein the plurality of pillars includes a hydrophobic material.3. The method for manufacturing an optical sensor according to claim 2 , wherein the hydrophobic material is amorphous fluoropolymer claim 2 , and a refractive index of the plurality of pillars and a refractive index of the plurality of spaces are different.4. The method for manufacturing an optical sensor according to claim 1 , wherein the reflective metal layer is a gold thin film layer claim 1 , anda metal applied to the self-assembly of the metal nanostructure layer is gold.5. The method for manufacturing an optical sensor according to claim 4 , wherein the forming of the reflective metal layer and the inducing of the self-assembly of the metal nanostructure layer are performed through a thermal evaporation process claim 4 , anda thermal evaporation rate of the reflective metal layer is faster than ...

SUBSTRATE PROCESSING APPARATUS

A substrate processing apparatus includes a chamber, a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon, and a gas supply part to supply a gas into the chamber. A plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region is provided and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas. A plurality of electron energy control parts is correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other. 1. A substrate processing apparatus , comprising:a chamber;a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon;a gas supply part to supply a gas into the chamber;a plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas; anda plurality of electron energy control parts correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other.2. The substrate processing apparatus according to claim 1 , wherein the chamber includes a gas excitation section that contains the gas supply part claim 1 , the gas electron gun arrays and the electron energy control parts claim 1 , and a substrate processing section that contains the pedestal.3. The substrate processing apparatus according to claim 2 , wherein the gas supply part is provided in a side wall of the chamber.4. The substrate processing apparatus according to claim 2 , wherein the gas supply part is provided between the electron gun arrays adjacent to each other.5. The substrate processing apparatus according to claim 1 , wherein the electron ...

TOMOGRAPHY-ASSISTED TEM PREP WITH REQUESTED INTERVENTION AUTOMATION WORKFLOW

Provided is a process for lamella thinning and endpointing that substitutes a series of automated small angle tilts for the motions in the conventional endpointing sequence. STEM images or through-surface BSE scans are acquired at each tilt. The results are analyzed automatically to determine feature depths, and an intervention request is made requesting a user decision based on marked-up images and summary information displayed. 1. A method comprising:milling a layer of material from one major lateral side of a workpiece, the workpiece including two major lateral sides;acquiring an image at each tilt orientation of a small-angle tilt series, the small-angle tilt series including a plurality of tilt orientations;identifying one or more features in each of the images;applying metrology to determine respective depths of the one or more features from at least one of the major lateral sides;requesting an operator intervention in the process by (I) displaying prepared images with measured depths displayed and identified, (II) displaying measured thickness of the workpiece lamella, and (III) presenting a limited choice intervention menu with a first option to mill away a layer on the same major lateral side of the workpiece previously milled and a second option to flip the workpiece and then mill away a layer on the opposing major lateral side of the workpiece;receiving an operator choice through the limited choice intervention menu; andbased on the operator choice, either flipping the lamella or presenting the previously milled major lateral side of the workpiece lamella toward the ion beam, milling a layer of material from the presented side of the workpiece.2. The method of claim 1 , wherein the small-angle tilt series includes no more than two projections.3. The method of claim 1 , wherein the images are STEM projections.4. The method of claim 3 , wherein identifying one or more features in each of the images includes:aligning the STEM projections; anddetermining ...

METHOD FOR OPERATING A PLURALITY OF FIB-SEM SYSTEMS

Processes may be performed with a plurality of FIB-SEM systems. A first process group includes recording an image with the electron beam column, depositing material with supply of a process gas, and performing ion beam etching. A second process group includes performing a sample exchange, exchanging a reservoir of a gas source for the process gas, and verifying an image that was recorded with the electron beam column. The processes of the second group are prioritized. The FIB-SEM systems are actuated to work through processes contained in process lists. If in a plurality of FIB-SEM systems processes of the second group are to be performed simultaneously, an instruction based on the prioritization is output to the user. 1. A method for operating a plurality of FIB-SEM systems , wherein each of the FIB-SEM systems comprises an electron beam column for directing an electron beam onto a work region and an ion beam column for directing an ion beam onto the work region;wherein each of the FIB-SEM systems is configured such that they can be used to perform at least a plurality of predefined processes, wherein the plurality of predefined processes comprises at least one first group of processes that the FIB-SEM system can perform automatically without the assistance of the user and comprises a second group of processes that the FIB-SEM system must perform with the assistance of the user,wherein the first group of processes comprises at leastrecording an image with the electron beam column,depositing material with supply of a process gas, andperforming ion beam etching, performing a sample exchange,', 'exchanging a reservoir of a gas source for the process gas, and', 'verifying an image that was recorded with the electron beam column,, 'and the second group of processes comprises at least'}wherein the method comprises:prioritizing the processes of the second group;maintaining a process list for each of the FIB-SEM systems, wherein each process list contains a plurality of ...

TOTAL RELEASE METHOD FOR SAMPLE EXTRACTION IN AN ENERGETIC-BEAM INSTRUMENT

A substrate located in an energetic-beam instrument has a region of interest to be extracted as a sample for further analysis. Cuts are made in the substrate to define a sample, and a stress-buffer layer is formed over the region of interest or adjacent to it. An isolating cut is made to separate the portion of the substrate containing the region of interest from the bulk substrate; however, the isolated area remains attached to the stress-buffer layer. An end-effector, such as the probe of a nano-manipulator, is attached to the stress-buffer layer, and the stress-buffer layer is cut to free the sample. The sample may then be attached to a holder by attachment of the stress-buffer layer thereto. Thus the sample is never at the same time connected directly and rigidly to two different objects that may move relatively to one another, creating undesirable stresses in the sample. 1. A method for sample extraction in an energetic-beam instrument , comprising:positioning a substrate having a region of interest in the energetic-beam instrument; the region of interest comprising first and second sides;forming a stress-buffer layer on the substrate over the region of interest, where the stress-buffer layer extends in at least one dimension beyond the region of interest;cutting with the energetic beam a first cut into the substrate on the first side of the region of interest;cutting with the energetic beam a second cut into the substrate on the second side of the region of interest; and,cutting with the energetic beam an isolating cut into the substrate, whereby the region of interest is isolated from the substrate but remains attached to at least a portion of the stress-buffer layer.2. The method of claim 1 , further comprising attaching an end-effector of a nano-manipulator to the stress-buffer layer.3. The method of claim 2 , where attaching of the end-effector to the stress-buffer layer comprises attaching the probe of a nano-manipulator by gas-assisted deposition.4. The ...

Sample Holder, Ion Milling Apparatus, Sample Processing Method, Sample Observing Method, and Sample Processing and Observing Method

The present invention is directed to a side entry type sample holder which enables observation with an observation apparatus without removing the sample to be analyzed from the sample holder after processing the sample to be analyzed by a processing apparatus. The sample holder includes a grip, a sample holder main body extending from the grip, a tip portion which is connected to the sample holder main body and provided with a sample table for fixing a sample, and a mechanism which changes a relative positional relationship between a processing surface of the sample fixed to the sample table and an irradiation direction of an ion beam, and causes the tip portion to avoid irradiation with the ion beam during sample processing. 1. A sample holder which is inserted in an ion milling apparatus so as to transverse an irradiation locus of an ion beam and is extracted from the ion milling apparatus after a sample processing , the sample holder comprising:a grip;a sample holder main body extending from the grip;a tip portion which is connected to the sample holder main body and provided with a sample table for fixing a sample; anda mechanism which changes a relative positional relationship between a processing surface of the sample fixed to the sample table and an irradiation direction of the ion beam, and causes the tip portion to avoid irradiation with the ion beam during sample processing.2. The sample holder according to claim 1 , whereinin a state where the tip portion is horizontal to the sample holder main body, the mechanism rotates the tip portion toward a direction opposite to a direction in which an ion source that performs irradiation with the ion beam is provided.3. The sample holder according to claim 2 , whereinthe mechanism rotates the tip portion about a rotation shaft provided at a connecting portion between the tip portion and the sample holder main body.4. The sample holder according to claim 3 , whereinthe mechanism includesa first shaft that is housed ...

Ion Milling Apparatus and Sample Holder

An ion milling apparatus has: a sample holder including a shield member for shielding the sample except for a portion to be milled; and a sample locking member cooperating with the shield member such that the sample is sandwiched and held therebetween. The shield member has an edge portion that determines a milling position on or in the sample. The sample locking member is disposed downstream of the edge portion in the direction of irradiation by the ion beam and has a support portion cooperating with the edge portion to support the milled portion therebetween. The support portion has a first surface making contact with the sample and a second surface making a given angle to the first surface. The given angle is equal to or less than 90°. 1. An ion milling apparatus for milling a sample by ion beam irradiation , the ion milling apparatus having a sample holder for supporting the sample;wherein the sample holder has both a shield member for shielding the sample except for a portion to be milled and a sample locking member cooperating with the shield member such that the sample is sandwiched and held therebetween, the shield member having an edge portion that determines a milling position on or in the sample;wherein the sample locking member is disposed downstream of the edge portion in the direction of the ion beam irradiation and has at least one support portion cooperating with the edge portion to support the milled portion therebetween; andwherein the at least one support portion has a first surface making contact with the sample and a second surface making a given angle to the first surface, the given angle being equal to or less than 90°.2. An ion milling apparatus as set forth in claim 1 , wherein said given angle is an acute angle.3. An ion milling apparatus as set forth in claim 1 , wherein said sample and said sample locking member are simultaneously milled by the ion beam irradiation.4. An ion milling apparatus as set forth in claim 1 , further comprising a ...

METHODS AND DEVICES FOR EXAMINING AN ELECTRICALLY CHARGED SPECIMEN SURFACE

A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface. 1. (canceled)2. A method for examining a specimen surface with a charged particle beam of a scanning particle microscope , the specimen surface having an electrical potential distribution of an electrostatic charge , the method comprising the steps of:a. determining the electrical potential distribution of the electrostatic charge of at least one first partial region of the specimen surface;b. correcting at least one setting of the scanning particle microscope on the basis of the potential distribution of the electrostatic charge determined in step a. to process at least one second partial region of the specimen surface with the charged particle beam; and/orc. scanning at least one first partial region of the specimen surface with the charged particle beam of the scanning particle microscope; andd. correcting by use of the potential distribution of the electrostatic charge determined in step a. an image of the scanning particle micro-scope generated from the scanning data of the at least one second partial region, the correction of an image of the scanning particle micro-scope generated from the scanning data comprising correcting a critical dimension and/or a positioning error of a structural element of a photomask, a structural element of a photoresist arranged on a wafer and/or a structural element of a component on a wafer.3. The method according to claim 2 , also comprising the step of: determining ...

DEVICE AND METHOD FOR PREPARING MICROSCOPIC SAMPLES

The disclosure relates to a receptacle device for receiving and preparing a microscopic sample. The receptacle device is mountable onto a sample stage. The sample stage is arranged in a sample chamber of a microscope system and is movable by way of an open kinematic chain of rotational or rotational and translational elements. The last rotational element of the open kinematic chain is arranged such that it is rotatable about an axis R. The receptacle device has an axis R, about which the receptacle device is arranged such that it is rotatable. The axis Ris arranged at an angle α relative to the axis R. The angle α assumes a value in the range of 10° to 80°. By rotation of the receptacle device about the axis R, the receptacle device can adopt at least a first position and a second position. 1. A receptacle device , wherein:the receptacle device is configured to receive and prepare a microscopic sample;the receptacle device is mountable onto a sample stage which is in a sample chamber of a microscope system;the sample stage is movable via an open kinematic chain of elements comprising at least one member selected from the group consisting of a rotational element and a translational element;{'sub': '1', 'a last rotational element of the open kinematic chain is rotatable about an axis, R;'}{'sub': '2', 'the receptacle device has an axis, R, about which the receptacle device is arranged so that the receptacle device is rotatable;'}{'sub': 2', '1, 'the axis Ris arranged at an angle α relative to the axis R;'}the angle α is from 10° to 80°;{'sub': '2', 'the receptacle device is transferrable from a first position to a second position via rotation about the axis R; and'}the first position is different from the second position.2. The receptacle device of claim 1 , wherein the angle α is from 40° to 60°.3. The receptacle device of claim 1 , wherein the angle α is from 20° to 30°.4. The receptacle device of claim 1 , wherein the angle α is substantially 45°.5. The receptacle ...

AUTOMATIC PROCESSING DEVICE

This automatic processing device for fabricating a sample piece from a sample by irradiating the sample with a charged particle beam is provided with: a structural information acquiring unit which acquires structural information indicating the structure of the sample before processing; a processing termination position acquiring unit which acquires termination position specifying information specifying a processing termination position corresponding to the structure of the sample; an image acquiring unit which acquires a processed surface image in which a processed surface appearing at the position at which the sample has been irradiated by the charged particle beam is captured; and a determining unit which determines whether the position of the processing by the charged particle beam has reached the termination position, on the basis of a comparison between the structural information acquired by the structural information acquiring unit and the processed surface image acquired by the image acquiring unit. 1. An automatic working apparatus comprising:a charge particle beam column configured to irradiate a sample with a charged particle beam to produce a sample piece; and obtain structure information indicating a structure of the sample before working;', 'obtain end position specifying information that specifies an end position of working corresponding to the structure of the sample;', 'obtain a working surface image, the working surface image being obtained by imaging a working surface that appears at a position where the sample is irradiated with the charged particle beam; and', 'determine whether a working position of the charged particle beam has reached the end position on the basis of a comparison between the obtained working surface image and the obtained structure information., 'a controller configured to2. The automatic working apparatus according to claim 1 ,wherein the structure information is an image obtained by imaging the sample before working, ...

ACHROMATIC DUAL-FIB INSTRUMENT FOR MICROFABRICATION AND MICROANALYSIS

A mulch-beam focused ion beam instrument containing a micro fabrication beam () for sputtering and surface polishing and a micro analysis beam () which passes through a spherically and chromatically corrected quadrupole objective lens system (), for use with bulk specimens () and detectors () or transmission specimens () and transmitted particle detectors (). 1. An improved dual-beam FIB instrument comprising one or more FIB columns , in which the improvement comprises a Cs and Cc corrected quadrupole objective lens in at least one FIB column.2. The method of utilizing the instrument of comprising the steps of:1) providing a specimen such as an integrated circuit on an x-y locating stage2) indexing a feature of interest to the location of the microfabrication beam3) sweeping the microfabrication beam to sputter away material to create a region for microanalysis4) placing the microscope beam onto the newly micromachined region, and5) sweeping the microscope beam and utilizing associated electronics to create images of the specimen.3. The method of further comprising utilization of the associated electronics to detect any of the following emanations produced by either ion beam:1) secondary electrons2) x-rays3) secondary ions4) ions from a FIB which have been scattered by the specimen5) ions from a FIB which have been transmitted by the specimen.4. An improved Cs and Cc corrected FIB instrument as in claim 1 , in which the improvement further comprises detectors of primary ions which have been transmitted by the specimen.5. The methods of utilizing the instrument of to produce images by detecting any of the following:1) the energy loss of transmitted ions (STIM)2) The scattering of primary ions into an annular detector3) the x-y position of arrival of scattered primary ions.6. The method of utilizing the instrument of comprising the steps of1) utilizing the micromachining beam to etch and polish a region for microanalysis2) turning the specimen over, for instance by ...

Method and device for spatial charged particle bunching

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

Method for processing and/or for observing an object, and particle beam device for carrying out the method

A method is provided for processing and/or observing an object using at least one particle beam that is scanned over the object. A scan region on the object is determined, the scan region having scan lines, and the particle beam is moved in a first scanning direction along one of the scan lines. The first scanning direction is changed to a second scanning direction at a change-of-direction time. Changing from the first scanning direction to the second scanning direction comprises setting of a point of rotation in that scan line of the scan region in which the particle beam is situated at the change-of-direction time, with an axis of rotation extending through the point of rotation. The first scanning direction is changed into the second scanning direction by rotating the scan region about the axis of rotation, with the point of rotation being selected dependent on the direction of rotation.

DYNAMIC APERTURE FOR THREE-DIMENSIONAL CONTROL OF THIN-FILM DEPOSITION AND ION-BEAM EROSION

A dynamic aperture system includes at least one baffle array including a plurality of baffle elements, at least one source configured to provide atoms for differential deposition or ions for differential erosion, and an actuator configured to independently translate each baffle element in order to selectively modify at least one of a shape or size of an aperture formed in the baffle array in real-time. 1. A dynamic aperture system comprising:at least one baffle array comprised of a plurality of baffle elements;at least one source configured to provide atoms for differential deposition or ions for differential erosion; andan actuator configured to independently translate each of the plurality of baffle elements in order to selectively modify at least one of a shape or size of an aperture formed in the baffle array in real-time.2. The dynamic aperture system of claim 1 , wherein each baffle element is configured to translate such that the size of the aperture is increased to deposit more atoms or ions on a substrate and to translate such that the size of the aperture is decreased to deposit less atoms or ions on the substrate.3. The dynamic aperture system of claim 1 , wherein the actuator comprises at least one brushless DC motor and an encoder.4. The dynamic aperture system of claim 1 , wherein the actuator comprises a plurality of stepper motors and a single limit switch.5. The dynamic aperture system of claim 1 , wherein the at least one baffle array comprises a plurality of baffle arrays claim 1 , wherein the plurality of baffle elements of each of the plurality of baffle arrays are configured to translate independent of the baffle elements of another baffle array.6. The dynamic aperture system of claim 5 , further comprising a plurality of apertures claim 5 , each aperture of the plurality of apertures having an associated shape and size.7. The dynamic aperture system of claim 6 , wherein the plurality of apertures each have the same shape and size.8. The ...

METHOD AND DEVICE FOR PROCESSING A SURFACE OF A SUBSTRATE BY MEANS OF A PARTICLE BEAM

This invention relates to a method and a device for processing a surface of a substrate by means of a particle beam. The method comprises the irradiation of the surface of the substrate, wherein, in a first area of the surface of the substrate, the surface of the substrate is processed with the particle beam, which strikes the surface of the substrate in an unpulsed manner; and wherein, in a second area of the surface of the substrate, the surface of the substrate is processed with the particle beam, which strikes the surface of the substrate in a pulsed manner. 1. A method for processing a surface of a substrate using a particle beam , the method comprising: wherein, in a first area of the surface of the substrate, the surface of the substrate is processed with the particle beam which strikes the surface of the substrate in an unpulsed manner; and', 'wherein in at least a second area of the surface of the substrate, the surface of the substrate is processed with the particle beam which strikes the surface of the substrate in a pulsed manner., 'irradiating the surface of the substrate with the particle beam,'}2. A method for processing a surface of a substrate using a particle beam , the method comprising: wherein, in a first area of the surface of the substrate, the surface of the substrate is processed with the particle beam, which, pulsed with a first duty cycle, strikes the surface of the substrate; and', 'wherein in at least a second area of the surface of the substrate, the surface of the substrate is processed with the particle beam with a second duty cycle in a pulsed manner, wherein the second duty cycle is different from the first duty cycle., 'irradiating the surface of the substrate with the particle beam,'}3. The method according to claim 1 , further comprising determining a number of pulsed and unpulsed processes for each surface area to be processed.4. The method according to claim 3 , wherein the determining the number of pulsed processes comprises ...

A Device for Extracting and Placing a Lamella

A device for creating and placing a lamella comprises a focused ion beam, a scanning electron microscope, a stage for placing at least two specimens enabling tilting, rotation and movement of the specimen. The device further comprises a manipulator terminated by a needle for attaching and transporting the specimen. The manipulator is positioned in a plane perpendicular to the axis of the tilt of the specimen, thereby enabling easy transportation and placing of the lamella into the specimen holder for a transmission electron microscope, so-called grid. The manipulator is adjusted to rotate the needle about its own axis. Thus, it enables inverting of the lamella and its polishing over a layer of semiconductor substrate, on which a semiconductor structure is formed, in case of creating the lamella from a semiconductor device. 1. A device for extracting and placing a lamella , comprising a focused ion beam column , a scanning electron microscope column , and a specimen chamber with a stage for positioning of at least two specimens enabling tilting , rotation and movement along three mutually perpendicular axes , wherein the tilting is enabled about the axis perpendicular to a plane defined by the axis of the focused ion beam column and by the axis of the scanning electron microscope column , and the rotation is enabled about the vertical axis , further comprising a handler terminated by a needle , which is able to move and rotate about its own axis , wherein the handler is positioned in a plane defined by the axis of the focused ion beam column and by the axis of the scanning electron microscope column , wherein the handler is placed directly under the focused ion beam column and above an intersection of the axis of the scanning electron microscope column and the axis of the focused ion beam column.2. The device for extracting and placing a lamella according to claim 1 , wherein the handler is placed at an angle 0°-35° from the line perpendicular to the axis of the ...

Gas Phase Sample Preparation for Cryo-Electron Microscopy

The present invention provides methods for controllably forming a layer of amorphous ice and other amorphous solids on a substrate, and also provides cryo-electron microscopy (cryo-EM) sample preparation methods and systems that utilize in vacuo formation of amorphous ice and other solids. Formation of the amorphous solid layer can be independent of the deposition of sample molecules to be analyzed using electron microscopy, and allows for the generation of a uniformly thick layer. Optionally, mass spectrometry instruments are used to generate and purify molecules deposited on the generated amorphous solid layer. The techniques and systems described herein can deliver near ideal cryo-EM sample preparation to greatly increase resolution, sensitivity, scope, and throughput of cryo-EM protein imaging, and therefore greatly impact the field of structural biology.

TEM SAMPLE PREPARATION

An improved method of preparing ultra-thin TEM samples that combines backside thinning with an additional cleaning step to remove surface defects on the FIB-facing substrate surface. This additional step results in the creation of a cleaned, uniform “hardmask” that controls the ultimate results of the sample thinning, and allows for reliable and robust preparation of samples having thicknesses down to the 10 nm range. 1. A method of preparing a sample for TEM analysis , the method comprising:loading a substrate into an ion beam system;separating a sample from the substrate by ion beam milling;extracting the sample from the substrate, said sample having a vertical axis, a top side, and a bottom side;attaching the sample to a sample holder;positioning the sample holder so that the bottom side of the sample is oriented toward the ion beam source and so that the ion beam is parallel to the vertical axis of the sample;thinning the sample by directing the ion beam in a milling pattern that thins at least a portion of the sample to electron transparency;characterized bypositioning the sample holder before thinning the sample, so that the ion beam is transverse to the vertical axis of the sample;milling the bottom side of the sample to remove at least of portion of the bottom surface of the sample to produce a uniformly flat surface; andthinning the sample by directing the ion beam in a milling pattern that thins at least a portion of the sample to a thickness of 30 nm or less.2. The method of in which attaching the sample to a sample holder comprises:rotating the sample about an axis perpendicular to the sample vertical axis to invert the top and bottom sides of the sample; andattaching the inverted sample to a sample holder.3. The method of in which positioning the sample holder so that the ion beam is transverse to the vertical axis of the sample comprises positioning the sample holder so that the angle between the ion beam and the vertical axis of the sample is from 35 ...

TEXTURED SURFACES FOR BREAST IMPLANTS

The invention provides new devices for implantation in a patient having irregular textured surfaces, which devices show significantly improved cellular response compared to conventional smooth and textured implants, indicating that significantly improved biocompatibility would be achieved in vivo. Methods for making such new devices and surface textures are also disclosed. 1. A synthetic implant material comprising an irregular textured surface having a mean surface roughness Sa value of:a) from 1 μm to 20 μm at an area scale of 1 mm×1 mm;b) from 0.1 μm to 5 μm at an area scale of 90 μm×90 μm;c) from 10 nm to 1 μm at an area scale of 10 μm×10 μm;d) from 2 nm to 15 nm at an area scale of 1 μm×1 μm.2. An implant material according to having a mean surface roughness Sa value of:a) from 4 μm to 8 μm at an area scale of 1 mm×1 mm;b) from 0.1 μm to 0.9 μm at an area scale of 90 μm×90 μm; orc) from 10 nm to 200 nm at an area scale of 10 μm×10 μm.3. (canceled)4. An implant material according to wherein the surface at the respective areas scales has a mean surface skewness Ssk value ofa) from −1.0 to +1.0 at an area scale of 1 mm×1 mm;b) from −1.0 to +1.0 at an area scale of 90 μm×90 μm; orc) from −0.7 to +0.7 at an area scale of 10 μm×10 μm.5. An implant material according to wherein the surface at the respective areas scales has a mean surface skewness Ssk value of about zero.6. An implant material according to wherein the surface is substantially free of peaks and troughs which deviate significantly from the mean surface height roughness Sa value at the respective areas scale claim 1 , optionally wherein the surface is substantially free of peaks or troughs which deviate from the mean surface height roughness Sa value by more than 200% of the mean surface height value at the respective area scales.7. An implant material according to wherein having a mean excess kurtosis value (Sku minus 3) of:a) from −1.0 to +1.0, at an area scale of 1 mm×1 mm;b) from −1.0 to +1.0, at an ...

Method for preparing a tem sample

The present application discloses a method for preparing a TEM sample, including the following steps: step 1: providing a thin-film pre-sample with undesirable voids; step 2: performing a first cutting with a first FIB to form the TEM sample located in the target region of the thin-film pre-sample. The first thickness is reached after the first cutting. The voids are exposed from the front surface or the back surface of the TEM sample after the first cutting; step 3: depositing a first material layer by an ALD process to fill the voids in the TEM sample; step 4: performing the second cutting with a second FIB to form the target thickness of the TEM sample in the target region of the thin-film pre-sample. The present application can reduce or eliminate ion beam cutting marks related to the voids in the thin-film pre-sample.

Method of processing a material-specimen

A method for generating a smooth surface in a material-specimen includes generating a substantially smooth, first surface region by removing a first material-volume by particle beam etching. The first material-volume is partially defined by the first surface region. An angle between a beam direction and a surface normal of the first surface region is greater than 80 ° and less than 90 °. The method also includes generating a substantially smooth, second surface region by removing a second material-volume. The second material-volume is partially defined by the first surface region and is partially defined by the second surface region. An angle between the beam direction and a surface normal of the second surface region is less than 60°.

Microscopy imaging method and system

Notches or chevrons with known angles relative to each other are formed on a surface of the sample, where each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

Low Electron Temperature Etch Chamber with Independent Control Over Plasma Density, Radical Composition Ion Energy for Atomic Precision Etching

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam. 18-. (canceled)9. A plasma reactor for processing a workpiece , comprising:an electron beam gun enclosure having a beam outlet opening at one end of said enclosure and enclosing an electron emission electrode at an opposite end of said enclosure, said electron emission electrode having an electron emission surface facing said beam outlet, said beam outlet and said electron emission electrode defining a beam propagation path between them;an RF power source and an RF power conductor coupled between said RF power source and said electron emission electrode; anda processing chamber having a beam entry port aligned with said beam outlet, a workpiece support in said processing chamber for supporting a workpiece in a plane parallel with said beam propagation path, and a gas distributor coupled to said processing chamber.10. The plasma reactor of wherein said RF power source comprises a first RF power generator and an impedance match coupled between said first RF power generator and said electron emission electrode.11. The plasma reactor of wherein said impedance match comprises a dual frequency impedance match claim 10 , said power source further comprising a second RF power generator having a frequency different from a frequency of said first RF power generator.12. The plasma reactor of wherein said first RF power generator produces a low frequency and said second RF power generator produces a high frequency.13. The plasma reactor of further comprising a gas supply having a feed path into said electron beam gun enclosure.14. The plasma reactor of further comprising an ion-blocking filter in said beam outlet opening claim 13 , said ion-blocking ...

CHARGED PARTICLE BEAM APPARATUS

A charged particle beam apparatus for processing a tip end portion of a sample into a needle shape, includes an ion beam irradiation unit that irradiates the tip end portion with ion beams, an electron beam irradiation unit that irradiates the tip end portion with electron beams, a secondary electron detection unit that detects secondary electrons generated at the tip end portion by the irradiation with the electron beams, and an EBSD detection unit that detects diffracted electrons generated at the tip end portion by the irradiation with the electron beams. 1. A charged particle beam apparatus for processing a tip end portion of a sample into a needle shape , the charged particle beam apparatus comprising:an ion beam irradiation unit configured to irradiate the tip end portion with ion beams;an electron beam irradiation unit configured to irradiate the tip end portion with electron beams;a secondary electron detection unit configured to detect secondary electrons generated at the tip end portion by the irradiation with the electron beams; andan EBSD detection unit configured to detect diffracted electrons generated at the tip end portion by the irradiation with the electron beams.2. The charged particle beam apparatus according to claim 1 ,wherein the ion beam irradiation unit and the electron beam irradiation unit are disposed such that the ion beams and the electron beams are perpendicular to each other.3. The charged particle beam apparatus according to claim 2 ,wherein the EBSD detection unit has a detection surface for detecting the diffracted electrons, the detection surface being directed toward the tip end portion, andwherein the detection surface is disposed in a direction perpendicular to both of the ion beams and the electron beams when viewed from the tip end portion.4. The charged particle beam apparatus according to claim 1 , further comprising:an EDS detection unit configured to detect X rays generated at the tip end portion.5. The charged particle ...

METHOD, DEVICE AND SYSTEM FOR THE TREATMENT OF BIOLOGICAL CRYOGENIC SAMPLES BY PLASMA FOCUSED ION BEAMS

The invention relates to a method, a device and a system for the treatment of biological frozen samples using plasma focused ion beams (FIB). The samples can then be used for mass spectrometry (MS), genomics, such as gene sequencing analysis or next generation sequencing (NGS) analysis, and proteomics. The present invention particularly relates to a method of treatment of at least one biological sample. This method is particularly used for high performance microscopy, proteomics analytics, sequencing, such as NGS etc. According to the present invention the method comprises the steps of providing at least one biological sample in frozen form. The milling treats at least one part of the sample by a plasma ion beam comprising at least one of an O and/or a Xe plasma. 1. A method of analyzing a biological sample , comprising:providing at least one biological sample in frozen form;{'sup': '+', 'isolating at least a target from the sample by milling the sample using a plasma ion beam comprising at least an O plasma; and'}analyzing the isolated target, wherein the analysis includes proteomic analysis and/or next-generation sequencing.2. The method of claim 1 , wherein isolating at least a target from the sample by milling the sample using a plasma ion beam includes isolating the target by sputtering away at least an unwanted part adjacent to the target using the plasma ion beam.3. The method of claim 2 , further comprising transferring the isolated target to a spectrometer for the proteomic analysis.4. The method of claim 3 , wherein the spectrometer is an orbitrap fusion mass spectrometer.5. The method of claim 2 , further comprising transferring the isolated target to a next-generation sequencing platform for the next generation sequencing.6. The method of claim 2 , further comprises obtaining an accumulated sample including a plurality of targets from one or more biological samples claim 2 , wherein analyzing the isolated target includes analyzing the accumulated sample. ...

BULK NANOFABRICATION WITH SINGLE ATOMIC PLANE PRECISION VIA ATOMIC-LEVEL SCULPTING OF CRYSTALLINE OXIDES

A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals. 1. A method of fabricating a crystalline oxide nano structure comprising:providing a scanning transmission electron microscope for generating a scanning electron beam;positioning a sample including an amorphous oxide precursor material on a crystalline substrate within a sample area of the scanning transmission electron microscope; andactivating the scanning transmission electron microscope such that the scanning electron beam impinges the sample in the region of the precursor material and physically and chemically transforms the precursor material into an epitaxially grown crystalline oxide nanostructure.2. The method according to further including the step of varying the intensity of the scanning electron beam such that the sample includes a patterned area and a non-patterned area claim 1 , the patterned area receiving a higher electron dose than the non-patterned area.3. The method according to wherein activating the scanning transmission electron microscope includes repeated scans of the electron beam to achieve progressive epitaxial growth of the crystalline oxide nanostructure with each successive scan of the ...

Charged Particle Radiation Device and Specimen Preparation Method Using Said Device

The present invention enables a sample to be observed in a clean state directly after preparation of a final observation surface when preparing a sample for observing a material that is sensitive to heat. The present invention is a method of preparing a sample using a charged particle beam device including a microprobe having a cooling mechanism, a first sample holder having a mechanism for retaining a sample in a cooled state, and a stage into which the microprobe and the first sample holder can be introduced, the method including cutting a bulk-shaped sample piece from the sample on the first sample holder retained in a cooled state; adhering the sample piece to a distal end of the microprobe that is cooled to a fixed temperature and transferring the sample piece to a second sample holder for thin film observation retained in a cooled state, which is different from the first sample holder, within a vacuum chamber of the charged particle beam device; separating the sample piece that has been transferred to the second sample holder from the microprobe and thin film processing the sample piece to a thickness that is less than the thickness during cutting; and observing the sample piece after the thin film processing.

Process gas enhancement for beam treatment of a substrate

A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

ION SOURCE DEVICE

The invention provides an electron-impact ion source device having high brightness as compared to known Nier-type ion sources, while providing similar advantages in terms of flexibility of the generated ion species, for example. The ionization chamber of the device operates at high pressures and provides for a large number of interactions between the electron beam and the gas molecules. 1. An ion source device comprising means for forming and guiding an electron beam along a first axis and an ionization chamber having an inlet for a gas and an inlet for said electron beam , wherein the ionization chamber comprises an ion beam outlet located on a second axis that is generally parallel to said first axis , surrounded by an ion carpet comprising co-planar and substantially concentric electrodes for funneling ions formed by interaction of said electron beam with said gas towards said ion beam outlet to form an ion beam , and an electronic circuit configured for applying an electric potential to said electrodes.2. The ion source device according to claim 1 , wherein said electronic circuit is configured for applying a radio-frequency electric potential to said electrodes.3. The ion source device according to claim 1 , wherein said electronic circuit is configured for applying DC electric potentials to said electrodes.4. The ion source device according to claim 1 , wherein the electrodes of said ion carpet are supported on a substantially planar substrate having an aperture aligned with said ion beam outlet.5. The ion source device according to claim 4 , wherein said electrodes are supported on a first side of said substrate claim 4 , and wherein said electronic circuit is supported on the second side of said substrate.6. The ion source device according to claim 4 , wherein said substrate is an integral part of an internal wall of said ionization chamber.7. The ion source device according to claim 1 , wherein said co-planar and concentric electrodes are arranged to have ...

METHOD FOR PROCESSING AN OBJECT

A method for processing an object, with material being removed from the object, includes directing a particle beam on the object so that a location of incidence of the particle beam on the object carries out a movement along a principal scanning path and a movement along a sub-scanning direction oriented transverse to the principal scanning path. The movement of the location of incidence of the particle beam along the sub-scanning direction is controlled on the basis of a reference signal and a detection signal. The method also includes modulating the directing of the particle beam in accordance with the reference signal, and detecting secondary particles and producing the detection signal, which represents an intensity of the detected secondary particles. Controlling the movement of the location of incidence of the particle beam along the sub-scanning direction is implemented using the principle of homodyne detection. 1. A method for processing an object , comprising:directing a particle beam on the object so that a location of incidence of the particle beam on the object carries out a movement along a principal scanning path and a movement along a sub-scanning direction oriented transverse to the principal scanning path, the movement of the location of incidence of the particle beam along the sub-scanning direction being controlled on the basis of a reference signal and a detection signal;modulating the directing of the particle beam in accordance with the reference signal; anddetecting secondary particles and producing the detection signal, which represents an intensity of the detected secondary particles,wherein the method removes material from the object.2. The method of claim 1 , wherein modulating the directing of the particle beam comprises modulating the intensity of the particle beam supplied to the object in accordance with the reference signal.3. The method of claim 2 , wherein the intensity of the particle beam supplied to the object is modulated:by ...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING THE SAME

According to one embodiment, a method of manufacturing a semiconductor device includes forming a mask on a film provided on a substrate, selectively etching the film by applying an ion beam of an inert gas to the film after the forming of the mask, and applying an electron beam to the film after the etching. 1. A method of manufacturing a semiconductor device , comprising:forming a mask or a film provided on a substrate;selectively etching the film by applying an ion beam of an inert gas to the film after the forming of the mask; andapplying an electron beam to the film after the etching.2. The method of claim 1 , whereinthe film has a stacked layer structure in which a nonmagnetic layer is provided between magnetic layers.3. The method of claim 2 , whereinthe film constitutes an MTJ element includes a storage layer, a reference layer, and a tunnel barrier layer between the storage layer and the reference layer.4. The method of claim 2 , whereinthe ion beam is applied from an ion source to the film.5. The method of claim 4 , whereinthe ion beam is applied obliquely to a surface of the film while rotating the substrate.6. The method of claim 1 , whereinthe electron beam is applied from an electron source to the film.7. The method of claim 6 , whereinthe electron beam is applied to the film while heating the substrate.8. The method of claim 6 , whereinthe electron beam is applied obliquely to a surface of the film while rotating the substrate.9. The method of claim 1 , whereinthe inert gas is one of Ar, He, Ne, Kr, Xe and Ra.10. The method of claim 1 , whereinthe selectively etching the film includes applying the ion beam to process the film and applying an electron beam.11. An apparatus for manufacturing a semiconductor device claim 1 , comprising:a chamber accommodating a stage for holding a substrate;an ion source provided in the chamber and configured to apply an ion beam of an inert gas to the substrate;an electron source provided in the chamber and configured to ...

AutoSlice and View Undercut Method

A method is provided for slice and view processing of samples with dual beam systems. The slice and view processing includes providing a location for particles and material resulting from the slice and view process to collect without obscuring the sample face to be viewed and imaged. This location is formed as an undercut located beneath or in front of the sample face. 1. A method of processing a sample by slice and view processing with a dual beam system , comprising:locating an area of interest in the sample for viewing and imaging;exposing a face in the sample by removing material to create a trench;isolating the area of interest by removing material to form side trenches on each side of the area of interest; andcreating a location for collecting particles resulting from the slice and view processing without obscuring the sample face.2. The method of claim 1 , wherein the location for collecting particles is formed as an undercut extending below the area of interest.3. The method of claim 1 , wherein the location for collecting particles is formed as an undercut located in front of the area of interest.4. The method of claim 1 , wherein the face of the sample is substantially perpendicular to a top surface of the sample.5. The method of claim 1 , wherein the face of the sample is angled relative to the top surface of the sample.6. The method of claim 1 , wherein the area of interest has a depth claim 1 , and the location for collecting particles extends at least the depth of the area of interest.7. A method of processing a sample by slice and view processing with a dual beam system claim 1 , comprising:directing an ion beam toward a substrate to mill a trench in the substrate, the trench exposing a wall having an area of interest around a feature to be observed; anddirecting the ion beam toward the substrate to mill a location for collecting particles resulting from the slice and view processing without obscuring the area of interest.8. The method of claim 7 , ...

Apparatus for Preparing Specimens for Microscopy

An apparatus for preparing specimens for microscopy including equipment for providing two or more of each of the following specimen processing activities under continuous vacuum conditions: plasma cleaning the specimen, ion beam or reactive ion beam etching the specimen, plasma etching the specimen and coating the specimen with a conductive material. Also, an apparatus and method for detecting a position of a surface of the specimen in a processing chamber, wherein the detected position is used to automatically move the specimen to appropriate locations for subsequent processing.

FORMING A VERTICAL SURFACE

A miller, a non-transitory computer readable medium, and a method. The miller may include an ion beam column that may be configured to form a vertical surface in an object by applying a milling process that may include forming a vertical surface by irradiating, for a certain period of time, an area of an upper surface of an object by a defocused ion beam that comprises multiple rays. During the certain period of time and at a plane of the upper surface of the object, a majority of the multiple rays are closer to an edge of the defocused ion beam than to a center of the defocused ion beam. The focal plane of the defocused ion beam is located below the upper surface of the object. 1. A miller that comprises:a controller; andan ion beam column;wherein the controller is configured to receive or determine milling parameters related to a milling process;wherein the ion beam column is configured to form a vertical surface in an object by applying the milling process while maintaining the milling parameters; wherein the applying of the milling process comprises forming the vertical surface by irradiating, for a certain period of time, an area of an upper surface of the object by a defocused ion beam that comprises multiple rays, wherein during the certain period of time and at a plane of the upper surface of the object, a majority of the multiple rays are closer to an edge of the defocused ion beam than to a center of the defocused ion beam; andwherein a focal plane of the defocused ion beam is located below the upper surface of the object.2. The miller according to wherein a region of least confusion of the defocused ion beam coincides with the plane of the upper surface of the object.3. The miller according to wherein the upper surface of the object is closer to the region of least confusion of the defocused ion beam than to the focal plane of the defocused ion beam.4. The miller according to wherein the irradiating of the area is executed without moving the defocused ion ...

SAMPLE STACK STRUCTURE AND METHOD FOR PREPARING THE SAME

The present invention provides a sample stack structure with multiple layers. The sample stack structure has at least a substrate, an adhesive layer and a target layer. The target layer is directly sandwiched between the substrate and the adhesive layer. 111-. (canceled)12. A method for preparing a sample stack structure , comprising:providing a chip set comprising at least two dices and each chip comprising a substrate and a target layer;cutting said chip set at least four times to form a sample dice and a dummy dice and each said sample dice and said dummy dice has a shoulder portion and a bottom portion, wherein said shoulder portion has said substrate and said target layer;attaching said target layer of said sample dice to said substrate of said dummy dice by an adhesive layer; andremoving said bottom portion of said sample dice so that said target layer and some of said substrate of said sample dice are attached to said dummy dice by said adhesive layer to obtain a sample stack structure.13. The method for preparing a sample stack structure of claim 12 , wherein said chip set comprises a first dice and a second dice so that said first dice is said sample dice and said second dice is said dummy dice.14. The method for preparing a sample stack structure of claim 12 , wherein said adhesive layer comprises an epoxy resin.15. The method for preparing a sample stack structure of claim 12 , wherein said target layer comprises a composite material comprising a semiconductive material.16. The method for preparing a sample stack structure of claim 12 , wherein said shoulder portion of said sample dice is attached to said bottom portion of said dummy dice by said adhesive layer.17. The method for preparing a sample stack structure of claim 12 , further comprising:forming a metal pad on said substrate of said sample dice after removing said bottom portion of said sample dice.18. The method for preparing a sample stack structure of claim 12 , further comprising:forming a ...

Electron detection system

An electron detection system for detecting secondary electrons emitted from a sample irradiated by a Focused Ion Beam (FIB). The FIB emanates from a FIB column and travels along a beam axis within a beam region, which extends from the FIB column to the sample. The system comprises an electron detector configured for detecting the secondary electrons, and a deflecting field configured to deflect a trajectory of the secondary electrons, which were propagating towards the FIB column, to propel away from the beam axis and towards the electron detector. The deflecting field may be configured to divert the trajectory of secondary electrons while the secondary electrons are generally within the beam region.

SEMICONDUCTOR INSPECTION SYSTEM AND METHODS OF INSPECTING A SEMICONDUCTOR DEVICE USING THE SAME

A semiconductor inspection system including an ion beam milling unit configured to irradiate at least one cluster-ion beam onto a surface of a sample wafer and etch the surface of the sample wafer and an image acquisition unit configured to irradiate an electron beam onto the etched surface of the sample wafer and acquire an image of the etched surface may be provided. 1. A semiconductor inspection system , comprising:an ion beam milling unit configured to irradiate at least one cluster-ion beam onto a surface of a sample wafer and etch the surface of the sample wafer; andan image acquisition unit configured to irradiate an electron beam onto the etched surface of the sample wafer and acquire an image of the etched surface.2. The system of claim 1 , wherein the ion beam milling unit is configured to irradiate a plurality of cluster-ion beams including the at least one cluster-ion beam claim 1 , the cluster-ion beams including a first cluster-ion beam and a second cluster-ion beam claim 1 , the first cluster-ion beam is used to etch the surface of the sample wafer claim 1 , andthe second cluster-ion beam has an energy lower than that of the first cluster-ion beam and is used to planarize the etched surface of the sample wafer.3. The system of claim 1 , wherein the image acquisition unit is a scanning electron microscope (SEM).4. The system of claim 1 , further comprising:a mass spectrometry unit configured to measure a mass spectrum of secondary electrons produced from the sample wafer, while the surface of the sample wafer is etched.5. The system of claim 4 , wherein the mass spectrometry unit is a quadrupole mass spectrometer.6. The system of claim 4 , further comprising:a vacuum chamber configured to accommodate the ion beam milling unit, the image acquisition unit, and the mass spectrometry unit therein.7. The system of claim 6 , further comprising:a stage in the vacuum chamber and configured to receive the sample waferwherein the image acquisition unit is over a ...

Writing data generating method, multi charged particle beam writing apparatus, pattern inspecting apparatus, and computer-readable recording medium

According to the present invention, writing data capable of suppressing a data amount and a calculation amount in a multi charged particle beam writing apparatus is generated from design data including a figure having a curve. The present embodiment relates to a writing data generating method for generating writing data used in a multi charged particle beam writing apparatus. The method includes calculating a pair of curves each representing a curve portion of a figure included in design data, the curves each being defined by a plurality of control points, and generating the writing data by expressing a position of a second control point adjacent in a traveling direction of the curve to a first control point of the plurality of control points as a displacement from the first control point in the traveling direction of the curve and a displacement from the first control point in a direction orthogonal to the traveling direction.

GRID, METHOD OF MANUFACTURING THE SAME, AND ION BEAM PROCESSING APPARATUS

A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers. 1. A plate-shaped grid provided with a hole , whereinthe grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, andthe hole is formed in the grid so as to cut off the carbon fibers.2. The grid according to claim 1 , wherein the carbon fibers included in the carbon-carbon composite are chopped carbon fibers.3. The grid according to claim 1 , wherein at least part of the carbon-carbon composite is coated with a different material from the carbon-carbon composite.4. An ion beam processing apparatus comprising:a plasma generating unit;a processing chamber; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a grid assembly including the grid according to and configured to extract ions from plasma generated by the plasma generating unit to the processing chamber.'}5. A method of manufacturing a grid comprising:preparing a plate-shaped carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the carbon-carbon composite; andforming a hole in the carbon-carbon composite so as to cut off the carbon fibers by using a processing tool configured to perform cutting by rotary motion. This application is a continuation application of International Application No. PCT/JP2015/005851, filed Nov. 25, 2015, which claims the benefit of Japanese Patent Application No. 2015-052363 filed Mar. 16, 2015. The contents of the aforementioned applications are incorporated herein by reference in their entireties.Field of the InventionThe present invention relates to a grid plate, a method of manufacturing the same, and an ion beam processing apparatus.Description of the Related ArtIon ...

ION BEAM ETCHING WITH GAS TREATMENT AND PULSING

One or more layers of a magnetic random access memory (MRAM) stack on a substrate are etched by ion beam etching. An ion beam of an inert gas is generated in an ion beam source chamber and applied to a substrate in a continuous or pulsed manner. Without passing through the ion beam source chamber, a reactive gas is flowed directly into a processing chamber in which the substrate is located, where the reactive gas is pulsed or continuously provided into the processing chamber. The reactive gas may include a carbon-containing gas having a hydroxyl group that is flowed towards the substrate to limit re-deposition of sputtered atoms on exposed surfaces of the substrate from ion beam etching. 1. A method of ion beam etching a substrate , the method comprising:generating an ion beam of an inert gas from an ion beam source chamber;applying the ion beam of the inert gas to a substrate in a processing chamber outside the ion beam source chamber, wherein the ion beam etches one or more layers of a magnetic random access memory (MRAM) stack on the substrate; andintroducing a reactive gas directly into the processing chamber and towards the substrate.2. The method of claim 1 , wherein the reactive gas includes a carbon-containing gas having a hydroxyl group.3. The method of claim 2 , wherein the carbon-containing gas is selected from a group consisting of: an alcohol claim 2 , a carboxylic acid claim 2 , an organic hydroperoxide claim 2 , a hemiacetal claim 2 , and a hemiketal.4. The method of claim 3 , wherein the carbon-containing gas includes methanol.5. The method of claim 1 , wherein the reactive gas includes a fluorine-containing gas or a nitrogen-containing gas.6. The method of claim 1 , wherein the MRAM stack includes an MTJ stack claim 1 , wherein the MTJ stack includes a top magnetic layer claim 1 , a bottom magnetic layer claim 1 , and a tunnel barrier layer between the top magnetic layer and the bottom magnetic layer.7. The method of claim 1 , wherein sidewalls of ...

Method for structuring an object with the aid of a particle beam apparatus

Methods for structuring objects with a particle beam apparatus are disclosed.

Liquid metal ion source and focused ion beam apparatus

A liquid metal ion source (50) includes: a reservoir (10) configured to hold an ion material (M) forming a liquid metal; a needle electrode (20); an extraction electrode (22) configured to cause an ion of the ion material to be emitted from a distal end of the needle electrode; a beam diaphragm (24), which is arranged on a downstream side of the extraction electrode, and is configured to limit a beam diameter of the ion; and a vacuum chamber (30) configured to accommodate and hold the reservoir, the needle electrode, the extraction electrode, and the beam diaphragm in vacuum, wherein the liquid metal ion source further includes an oxidizing gas introducing portion (40), and wherein the oxidizing gas introducing portion communicates to the vacuum chamber, and is configured to introduce an oxidizing gas into a periphery of the needle electrode.

METHOD AND DEVICE FOR A CARRIER PROXIMITY MASK

A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate. 1. A carrier proximity mask , comprising:a first carrier body, the first carrier body having one or more openings, the one or more openings formed as proximity masks to form structures on a first side of a substrate, the first carrier body having one or more contact areas, the contact areas to align with one or more contact areas on the first side of the substrate;a second carrier body having one or more contact areas, the contact areas to align with one or more contact areas on a second side of the substrate; anda set of one or more clamps to clamp the first carrier body with the second carrier body;the one or more contact areas of the first carrier body and the one or more contact areas of the second carrier body to contact opposite sides of the substrate to suspend a work area of the first side of the substrate and a work area of the second side of the substrate between the first carrier body and the second carrier body.2. The carrier proximity mask of claim 1 , wherein the one or more contact areas of the first carrier body comprise contact areas to align with exclusion areas of the first side of the substrate and the one or more contact areas of the second carrier body comprise contact areas to align with ...

FOCUSED ION BEAM APPARATUS

The focused ion beam apparatus includes: an electron beam column; a focused ion beam column; a sample stage; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on a sample, plane coordinates of each of the irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height so that the eucentric height matches an intersection position at which the electron beam and the focused ion beam match each other at each of the irradiation positions; and a sample stage movement control unit configured to move, based on the movement amount, the sample stage to the eucentric height at each of the irradiation positions. 1. A focused ion beam apparatus , comprising:an electron beam column configured to irradiate a sample with an electron beam;a focused ion beam column configured to irradiate the sample with a focused ion beam;a sample stage, on which the sample is to be placed in one of a direct manner and an indirect manner, and which is tiltable about a tilt axis perpendicular to the electron beam and the focused ion beam and movable in a height direction;a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on the sample, plane coordinates of each of the plurality of irradiation positions;a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height (Zs) so that the eucentric height (Zs) matches an intersection position at which the electron beam and the focused ion beam match each other at each of the plurality of irradiation positions; anda sample stage movement control unit configured to move, based on the movement amount, the sample ...

Charged particle beam apparatus

To accomplish fast automated micro-sampling, provided is a charged particle beam apparatus, which is configured to automatically fabricate a sample piece from a sample, the charged particle beam apparatus including: a charged particle beam irradiation optical system configured to radiate a charged particle beam; a sample stage configured to move the sample that is placed on the sample stage; a sample piece transportation unit configured to hold and convey the sample piece separated and extracted from the sample; a holder fixing base configured to hold a sample piece holder to which the sample piece is transported; and a computer configured to perform position control with respect to a second target, based on a machine learning model in which first information including a first image of a first target is learned, and on second information including a second image, which is obtained by irradiation with the charged particle beam.

Focused ion beam apparatus

A focused ion beam apparatus (100) includes: a focused ion beam lens column (20); a sample table (51); a sample stage (50); a memory (6M) configured to store in advance three-dimensional data on the sample table and an irradiation axis of the focused ion beam, the three-dimensional data being associated with stage coordinates of the sample stage; a display (7); and a display controller (6A) configured to cause the display to display a virtual positional relationship between the sample table (51v) and the irradiation axis (20Av) of the focused ion beam, which is exhibited when the sample stage is operated to move the sample table to a predetermined position, based on the three-dimensional data on the sample table and the irradiation axis of the focused ion beam.

FOCUSED ION BEAM SYSTEMS AND METHODS OF OPERATION

A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece. 1. A focused ion beam (FIB) system comprising: 'a multicusp plasma confinement device having a first set of magnets to confine the plasma in radial and axial directions within the plasma generation chamber and a second set of magnets to facilitate formation of a plasma meniscus at an extraction end of the plasma generation chamber; and', 'a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma, wherein the plasma generation chamber comprises a plasma electrode configured to receive ions from the plasma genera ton chamber;', 'a first Einzel lens configured to extract a focused ion beam from the confined plasma;', 'second Einzel lens disposed adjacent to the beam limiting slit, configured to focus the extracted focused ion beam on a workpiece, wherein a beam spot formed on the workpiece by the focused ion beam has a diameter of about 10 microns to about 20 microns.', 'a beam limiting slit disposed adjacent to the first Einzel lens to reduce a size of the extracted focused ion beam; and'}], 'a beam extraction chamber comprises2. The system of claim 1 , wherein the plasma confinement device further comprises magnetic multipole ion reflecting walls having the first set of magnets with alternating polarity.35-. (canceled)6. The system of claim 1 , wherein the plasma electrode is held at ...

Unknown

A device with an ion column and a scanning electron microscope comprises at least one column detector of signal electrons placed inside or on the ion column. Signal generated on the sample is detected on the column detector during landing of a broad beam generated by the scanning electron microscope on the sample surface.

Method for preparing thin samples for tem imaging

A method and apparatus for preparing thin TEM samples in a manner that reduces or prevents bending and curtaining is realized. Embodiments of the present invention deposit material onto the face of a TEM sample during the process of preparing the sample. In some embodiments, the material can be deposited on a sample face that has already been thinned before the opposite face is thinned, which can serve to reinforce the structural integrity of the sample and refill areas that have been over-thinned due to a curtaining phenomena. In other embodiments, material can also be deposited onto the face being milled, which can serve to reduce or eliminate curtaining on the sample face.

METHOD OF PREPARING A SAMPLE FOR MICROSTRUCTURE DIAGNOSTICS, AND SAMPLE FOR MICROSTRUCTURE DIAGNOSTICS

A method of preparing a sample for microstructure diagnostics on a sample body by material-ablating processing, and subsequently producing an examination region on the sample portion, the examination region including a target region to be examined, the method including producing a terracing zone including the target region on at least one surface of the sample portion, wherein at least one notch with flanks extending obliquely in relation to the surface is produced next to the target region by material-ablating beam processing to produce the terracing zone, and ablating material from the surface of the sample portion in the region of the terracing zone by an ion beam, which is radiated under grazing incidence onto the surface obliquely to the direction of extent of the notch such that the target region lies behind the notch in the incoming radiation direction of the ion beam and, as a result of the terracing in the region behind the notch, the surface is recessed substantially parallel to the original height of the surface by way of ion beam processing. 1. A method of preparing a sample for microstructure diagnostics on a sample body by material-ablating processing , and subsequently producing an examination region on the sample portion , said examination region comprising a target region to be examined , the method comprising:producing a terracing zone comprising the target region on at least one surface of the sample portion, wherein at least one notch with flanks extending obliquely in relation to the surface is produced next to the target region by material-ablating beam processing to produce the terracing zone; andablating material from the surface of the sample portion in the region of the terracing zone by an ion beam, which is radiated under grazing incidence onto the surface obliquely to the direction of extent of the notch such that the target region lies behind the notch in the incoming radiation direction of the ion beam and, as a result of the terracing ...

METHOD AND APPARATUS FOR AN ELECTROMAGNETIC EMISSION BASED IMAGING SYSTEM

The present invention provides apparatus for an imaging system comprising a multitude of imaging elements upon a substrate. In some embodiments the substrate may be approximately round with a radius of approximately one inch. Various methods relating to using and producing an imaging system are discussed. 1. An imaging apparatus comprising:a first apparatus comprising a first substrate with a multitude of imaging elements arrayed thereupon, wherein the imaging elements are capable of emitting an imaging signal from their structure to a material sensitive to their emissions on a surface in a vicinity of the first apparatus, wherein the imaging elements are nano-scaled photon emitters metal deposited upon the first substrate, and wherein there are more than 1000 emitters of the first apparatus;a support component for a second substrate to be processed by the imaging apparatus;an alignment feature and alignment apparatus to measure the alignment feature; anda processor operant to collect data from imaging apparatus components, process the data and control imaging apparatus components based on the data.2. The imaging apparatus of further comprising a cooling device in thermal communication with the second substrate.3. The imaging apparatus of further comprising a piezoelectric actuating device to raster the imaging apparatus.4. The imaging apparatus of wherein the rastering comprises at least ten steps within a distance separating two of the photon emitters.5. A method of forming an imaging system comprising: depositing a layer of metal on a first substrate;', 'etching a plurality of photon emitters into a layer of metal;', 'finishing processing of an integrated circuit with metal layers; and', 'connecting a metal layer of an integrated circuit to a photon emitter to form a first imaging system element;, 'forming two or more individual imaging system elements, the method of forming the elements comprisingtesting two or more of the individual imaging system elements; ...

DOSE-BASED END-POINTING FOR LOW-KV FIB MILLING IN TEM SAMPLE PREPARATION

A method, system, and computer-readable medium for forming transmission electron microscopy sample lamellae using a focused ion beam including directing a high energy focused ion beam toward a bulk volume of material; milling away the unwanted volume of material to produce an unfinished sample lamella with one or more exposed faces having a damage layer; characterizing the removal rate of the focused ion beam; subsequent to characterizing the removal rate, directing a low energy focused ion beam toward the unfinished sample lamella for a predetermined milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and milling the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer to produce the finished sample lamella including at least a portion of the feature of interest. 1. A method for forming a lamella using ion beam , comprising:milling one or both sides of an unfinished lamella using a high energy ion beam to expose one or two faces of the unfinished lamella, each of the one or two faces of the unfinished lamella including a damage layer;milling the one or two faces of the unfinished lamella to remove at least a portion of the damage layer using a low energy ion beam to produce at least a partially finished lamella; andterminating milling the one or two faces of the unfinished lamella responsive to delivering a predetermined dose of ions per area by the low energy ion beam to the at least a portion of the damage layer.2. The method of claim 1 , further comprising:measuring a material removal rate of the low energy ion beam; anddetermining a milling time based on the measured material removal rate;wherein terminating milling the one or two faces of the unfinished lamella responsive to delivering the predetermined dose includes terminating milling the one or two faces of the unfinished lamella after the milling time.3. The method of claim 1 , further comprising: ...

MULTI SPECIES ION SOURCE

A high brightness ion source with a gas chamber includes multiple channels, wherein the multiple channels each have a different gas. An electron beam is passed through one of the channels to provide ions of a certain species for processing a sample. The ion species can be rapidly changed by directing the electrons into another channel with a different gas species and processing a sample with ions of a second species. Deflection plates are used to align the electron beam into the gas chamber, thereby allowing the gas species in the focused ion beam to be switched quickly. 120-. (canceled)21. A charged particle beam system , comprising:an electron source for providing a beam of electrons along an optical axis within a vacuum chamber;multiple chambers, at least one of the multiple chambers having a gas inlet and adapted for containing gas to interact with the electrons to produce ions;a first deflector for selectively deflecting the electron beam into different ones of the multiple chambers or into a bypass area in which the electrons are passed through;one or more extractor electrodes for extracting ions from at least one of the multiple chambers; anda second deflector for aligning the extracted ions with the optical axis.22. The charged particle beam system of further comprising a focusing lens for focusing the extracted ions onto a work piece.23. The charged particle beam system of in which at least one of the multiple chambers includes an inlet for connecting to a gas source.24. The charged particle beam system of in which the first deflector includes two parts claim 21 , a first part to deflect the electron beam away from the optical axis and a second part to deflect the electrons onto a second optical axis claim 21 , parallel to the first optical axis and concentric with one of the multiple chambers.25. The charged particle beam system of in which the second deflector includes two parts claim 21 , a first part to deflect the ion beam away from the second axis and ...

MULTI-SOURCE ION BEAM ETCH SYSTEM

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit. 1. A multi-source ion beam etching (IBE) system , comprising:a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor;a plurality of IBE sources coupled to the multi-source adaptor;a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body;at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages a bottom portion of the IBE sources on the opposite end of the beam conduit;a lower processing chamber having a substrate support pedestal, wherein the lower processing chamber is coupled to the lower chamber adaptor; anda rotating lift mechanism coupled to the lower processing chamber configured to rotate, lift and tilt the substrate support pedestal.2. The multi-source IBE system of claim 1 , wherein the multi-source adaptor secures the plurality of IBE sources to the multi-source lid.3. The multi-source IBE system of claim 1 , wherein the multi-source adaptor includes a body and a plurality of openings about which ...

LOW KEV ION BEAM IMAGE RESTORATION BY MACHINE LEARNING FOR OBJECT LOCALIZATION

Methods and systems for creating TEM lamella using image restoration algorithms for low keV FIB images are disclosed. An example method includes irradiating a sample with an ion beam at low keV settings, generating a low keV ion beam image of the sample based on emissions resultant from irradiation by the ion beam, and then applying an image restoration model to the low keV ion beam image of the sample to generate a restored image. The sample is then localized within the restored image, and a low keV milling of the sample is performed with the ion beam based on the localized sample within the restored image. 1. A method , comprising:irradiating a sample with an ion beam at low keV settings;generating a low keV ion beam image of the sample based on emissions resultant from irradiation by the ion beam;applying an image restoration model to the low keV ion beam image of the sample to generate a restored image;localizing the sample within the restored image; andperforming, based on the localized sample within the restored image, a low keV milling of the sample with the ion beam.2. The method of claim 1 , wherein applying the image restoration model comprises applying at least one machine learning model claim 1 , the at least one machine learning model comprising one or more neural networks.3. The method of claim 2 , wherein the machine learning model is trained to identify features of the restored image claim 2 , the features comprising features of the sample and features of a background of the restored image.4. The method of claim 3 , wherein identifying the features of the restored image comprises determining a position and orientation for the sample in the restored image based on the features of the restored image.5. The method of claim 1 , further comprising:determining a best algorithm of a set of algorithms based on one or more microscope settings; andwherein applying the image restoration model comprises applying the best algorithm to the low keV ion beam image ...

METHOD OF SAMPLE PREPARATION USING DUAL ION BEAM TRENCHING

Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis. 1. A method , comprising:imaging an inside of a semiconductor package to determine a region of interest (ROI) along a first vertical plane;positioning a mask over the semiconductor package, wherein the mask has a mask window defined in part by a window edge, and wherein the window edge is aligned with the ROI within the first vertical plane;sweeping a first ion beam having a first current density along the window edge to trench the semiconductor package; andsweeping a second ion beam having a second current density along the window edge to trench the semiconductor package, wherein the second current density is less than the first current density.2. The method of claim 1 , wherein the first ion beam removes a first portion of the semiconductor package to expose the inside of the semiconductor package along a second vertical plane claim 1 , and wherein the second ion beam removes a second portion of the semiconductor package between the second vertical plane and the first vertical plane to expose the ROI.3. The method of claim 2 , wherein sweeping the first ion beam and sweeping the second ion beam is simultaneous.4. The method of claim 2 , wherein the first ion beam is swept over the first portion and has a beam edge at the second vertical plane claim 2 , and wherein the beam edge is laterally offset from the window edge.5. The method of claim 2 , wherein sweeping the first ion beam and sweeping the second ion beam is sequential.6. The method of further comprising moving the mask to ...

DEPTH-CONTROLLABLE ION MILLING

A method for depth controlled ion milling, the method may include (a) ion milling a calibrated area and a target area; wherein the ion milling comprises exposing an interior of the calibrated area to provide an exposed interior of the calibrated area; wherein the target area comprises a buried region of interest that is positioned at a certain depth; wherein the calibrated area comprises a certain layer that is positioned at the certain depth; wherein the certain layer is visually distinguishable from another layer of the calibrated area that is precedes the certain layer; (ii) monitoring a progress of the milling by viewing the exposed interior of the calibrated area; and (iii) controlling of the ion milling based on an outcome of the monitoring. 1. A method for depth controlled ion milling , the method comprises:ion milling a calibrated area and a target area; wherein the ion milling comprises exposing an interior of the calibrated area to provide an exposed interior of the calibrated area; wherein the target area comprises a buried region of interest that is positioned at a certain depth; wherein the calibrated area comprises a certain layer that is positioned at the certain depth; wherein the certain layer is visually distinguishable from another layer of the calibrated area that is precedes the certain layer;monitoring a progress of the milling by viewing the exposed interior of the calibrated area; andcontrolling of the ion milling based on an outcome of the monitoring.2. The method according to wherein the controlling of the ion milling comprises stopping the ion milling when detecting the certain layer.3. The method according to wherein the calibrated area comprises multiple sequences of layers claim 1 , wherein layers of each sequence are visually distinguishable from each other.4. The method according to wherein each layer of the multiple sequences of layers is of a known thickness claim 3 , wherein the monitoring of the progress of the milling comprises ...

USE OF ION BEAM ETCHING TO GENERATE GATE-ALL-AROUND STRUCTURE

Various embodiments herein relate to methods and apparatus for performing anisotropic ion beam etching to form arrays of channels. The channels may be formed in semiconductor material, and may be used in a gate-all-around device. Generally speaking, a patterned mask layer is provided over a layer of semiconductor material. Ions are directed toward the substrate while the substrate is positioned in two particular orientations with respect to the ion trajectory. The substrate switches between these orientations such that ions impinge upon the substrate from two opposite angles. The patterned mask layer shadows/protects the underlying semiconductor material such that the channels are formed in intersecting shadowed regions. 1. A method of forming channels or nanowires for a gate-all-around device or other electronic device , the method comprising:(a) providing a substrate on a substrate holder in a reaction chamber, the substrate comprising a patterned mask layer over semiconductor material, wherein the patterned mask layer comprises a plurality of linear mask portions oriented substantially parallel to one another;(b) orienting the substrate with respect to an ion trajectory in a first orientation and directing ions toward the substrate in a first direction, wherein the ions impact the substrate at a first incidence angle to thereby anisotropically etch the semiconductor material to form a first set of trenches;(c) orienting the substrate with respect to the ion trajectory in a second orientation and directing ions toward the substrate in a second direction, wherein the ions impact the substrate at a second incidence angle to thereby anisotropically etch the semiconductor material to form a second set of trenches;(d) repeating (b)-(c) to further etch the first and second sets of trenches to form the channels or nanowires in a direction parallel to the plurality of linear mask portions.2. The method of claim 1 , wherein an array of channels or nanowires is formed claim ...

CROSS SECTION PROCESSING METHOD AND CROSS SECTION PROCESSING APPARATUS

A cross section processing method and a cross section processing apparatus are provided in which it is possible to form a flat cross section in a sample composed of a plurality of substances having different hardness by a focused ion beam. The etching of a processing area is performed while variably controlling the irradiation interval, the irradiation time, or the like of a focused ion beam based on cross section information of an SEM image obtained by the observation of a cross section. In this way, even if a sample is composed of a plurality of substances having different hardness, it is possible to form a flat observation surface with a uniform etching rate. 1. A cross section processing method of performing processing of a cross section of a sample by irradiating the sample with a focused ion beam , the method comprising:a cross section information obtaining process of obtaining cross section information of the sample; anda cross section processing process of forming an observation surface of the sample by performing etching of the cross section by irradiating the sample with the focused ion beam while varying an irradiation amount of the focused ion beam based on the obtained cross section information.2. The cross section processing method according to claim 1 , wherein the varying the irradiation amount of the focused ion beam comprises variably controlling at least one of an irradiation interval and irradiation time.3. The cross section processing method according to claim 1 , wherein the cross section information is contrast of the cross section or distribution of substances configuring the cross section.4. The cross section processing method according to claim 1 , wherein the cross section information is an etching rate map of the cross section created based on contrast of the cross section or distribution of substances configuring the cross section.5. The cross section processing method according to claim 1 , wherein the cross section information ...

Method of Depositing Protective Structures

A process of preparing a lamella from a substrate includes manufacturing a protection strip on an edge portion of the lamella to be prepared from the substrate, and preparing the lamella, wherein the manufacturing the protection strip includes a first phase of activating a surface area portion of the substrate, and a second phase of electron beam assisted deposition of the protective strip on the activated surface area portion from the gas phase.

SPECIMEN PREPARATION AND INSPECTION IN A DUAL-BEAM CHARGED PARTICLE MICROSCOPE

A method of preparing a specimen in a dual-beam charged particle microscope having: 1. A method of preparing a specimen in a dual-beam charged particle microscope , the method comprising:using an ion beam to form a furrow around a selected portion of said sample;attaching a manipulator needle to said portion;severing said portion from the rest of said sample;using the needle to perform a lift-out of the portion away from the rest of the sample;configuring the manipulator needle to have multiple degrees of motional freedom, comprising at least:eucentric tilt a about a tilt axis that passes through an intersection point of said ion and electron axes and is perpendicular to said electron axis;rotation φ about a longitudinal axis of the needle;whilst maintaining said portion on said needle, using said ion beam to machine at least one surface of said portion, so as to create said specimen; andwhilst maintaining said portion on said needle, inspecting it with said electron beam, for at least two different values of said φ rotation.2. A method according to claim 1 , wherein said inspecting step comprises performing transmissive electron tomography on said portion claim 1 , at a range of values of said rotation φ3. A method according to claim 2 , in which said tomography is performed at a tilt value θ=0 corresponding to a needle orientation that is substantially perpendicular to said electron beam.4. A method according to claim 1 , wherein: a plate; and', 'at least one appendage extending from said plate;, 'said needle holds a detachable tool comprisingwherein said portion is adhered to said appendage.5. A method according to claim 3 , wherein said tool comprises a TEM Grid or Lift-Out Grid.6. A method according to claim 2 , wherein a plurality of appendages extend from the plate claim 2 , in a fanned arrangement.7. A dual-beam charged particle microscope comprising:an ion beam column, for producing an ion beam that propagates along an ion axis;an electron beam column, for ...

CHARGED PARTICLE BEAM APPARATUS

An object of the invention is to correct an aberration or a defocus of an electron beam for irradiation, and control an influence on a deflector by a fluctuation in an electric field of an electrostatic lens. The invention provides a charged particle beam apparatus including a deflector that deflects a charged particle beam with which a specimen is irradiated, an objective lens that focuses the charged particle beam on the specimen, an electrostatic lens that includes a part of the objective lens and to which a voltage for correcting the aberration or the defocus of the charged particle beam is applied, and an constant electric field applying electrode that is provided between the deflector and the electrostatic lens and to which a constant voltage having a same sign with the voltage applied to the electrostatic lens is applied. 1. A charged particle beam apparatus comprising:a deflector that deflects a charged particle beam with which a specimen is irradiated;an objective lens that focuses the charged particle beam on the specimen;an electrostatic lens that includes a part of the objective lens and to which a voltage for correcting an aberration or a defocus of the charged particle beam is applied; andan constant electric field applying electrode that is provided between the deflector and the electrostatic lens and to which a constant voltage having a same sign with the voltage applied to the electrostatic lens is applied.2. The charged particle beam apparatus according to claim 1 , whereinthe constant electric field applying electrode is arranged along a shape of the electrostatic lens.3. The charged particle beam apparatus according to claim 1 , whereinthe constant electric field applying electrode is divided in an irradiation direction of the charged particle beam, and a voltage is independently applied to each divided electrode.4. The charged particle beam apparatus according to claim 3 , whereineach divided electrode has a same inner diameter, and a high ...

ENDPOINTING FOR FOCUSED ION BEAM PROCESSING

To expose a desired feature, focused ion beam milling of thin slices from a cross section alternate with forming a scanning electron image of each newly exposed cross section. Milling is stopped when automatic analysis of an electron beam image of the newly exposed cross section shows that a pre-determined criterion is met. 1. A method of automatically processing a work piece with a charged particle beam , comprising:defining a criterion that specifies when milling is complete;directing an ion beam toward the work piece to expose a cross section;directing an electron beam toward the cross section to form an electron beam image of the cross section;automatically evaluating the electron beam image to determine if the criterion in met;if the criterion is not met, repeatedly directing the ion beam to expose a fresh cross section and directing the electron beam to form an image of the cross section, until the criterion is met.2. The method of in which automatically evaluating the electron beam image includes determining a dimension defined by features in the image.3. The method of in which automatically evaluating the electron beam image includes determining a dimension defined by features in the image includes determining when an angle between two lines is less than a specified value.4. The method of in which automatically evaluating the electron beam image includes determining a dimension defined by features in the image includes determining when a distance between two features is equal to a specified value.5. The method of in which automatically evaluating the electron beam image includes automatically finding edges in the electron beam image and determining a dimensional relationship between the edges.6. The method of in which finding edges comprises using finding edges using changes in contrast between pixels in an image.7. The method of in which finding edges comprises applying a smoothing algorithm to improve edge detection.8. The method of in which defining a ...

MICROSCOPY IMAGING METHOD AND SYSTEM

Linear fiducials including notches or chevrons with known angles relative to each other are formed such that each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired. 1. A method for removing material from a sample to provide a section of the sample , comprising:providing a sample having x, y and z dimensions with first and second linear fiducials each having ends electronically detectable on a front cross-section surface of the sample and on a rear cross-section surface of the sample defined by the x-y plane and each extending from the front cross-section surface and the rear cross-section surface in a direction having the z-dimension component at known angles relative to the x-y surface;setting a target distance m from the front cross-section surface in the z-dimension, where m is a real number;setting a slice distance of n, where n Подробнее

DROPLET CUTTING METHOD AND DROPLET CROSS-SECTION ANALYSIS METHOD

Provided is a droplet cutting method capable of cutting a droplet easily to expose its cross-section. Also provided is a droplet cross-section analysis method, including analyzing a cross-section exposed through cutting by such cutting method. A droplet cutting method of the present invention is a method of cutting a droplet to expose a cross-section, the method including: placing a droplet on a surface of a carbon nanotube aggregate including a plurality of carbon nanotubes; cooling the droplet to a cooling temperature equal to or less than a temperature at which the droplet is solidified; and cutting the droplet. A droplet cross-section analysis method of the present invention includes analyzing a cross-section exposed through cutting by the droplet cutting method of the present invention. 1. A droplet cutting method for cutting a droplet to expose a cross-section , the method comprising:placing a droplet on a surface of a carbon nanotube aggregate including a plurality of carbon nanotubes;cooling the droplet to a cooling temperature equal to or less than a temperature at which the droplet is solidified; andcutting the droplet.2. A droplet cutting method according to claim 1 , wherein the droplet has a contact angle of 110 degrees or more with respect to the surface.3. A droplet cutting method according to claim 1 , wherein the cutting is performed by focused ion beam processing.4. A droplet cutting method according to claim 1 , wherein the cooling temperature is −100° C. or less.5. A droplet cutting method according to claim 1 ,wherein the carbon nanotubes each have a plurality of walls,wherein a distribution width of a wall number distribution of the carbon nanotubes is 10 walls or more, andwherein a relative frequency of a mode of the wall number distribution is 25% or less.6. A droplet cutting method according to claim 1 ,wherein the carbon nanotubes each have a plurality of walls,wherein a mode of a wall number distribution of the carbon nanotubes is present ...

Focused Ion Beam System and Method of Making Focal Adjustment of Ion Beam

A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source for producing an ion beam, a lens system for focusing the beam onto the sample, a detector for detecting secondary electrons emanating from the sample, and a controller for controlling the lens system. The controller is operative to provide control such that the sample is irradiated with the ion beam without scanning the beam and that a focus of the ion beam is varied by varying the intensity of the objective lens during the ion beam irradiation. Also, the controller measures the intensity of a signal indicating secondary electrons emanating from the sample while the intensity of the objective lens is being varied. Furthermore, the controller makes a focal adjustment of the ion beam on the basis of the intensity of the objective lens obtained when the measured intensity of the signal indicating secondary electrons is minimal.

NON-CONTACT POLISHING OF A CRYSTALLINE LAYER OR SUBSTRATE BY ION BEAM ETCHING

Polishing method comprising the steps of: —providing at least one crystalline layer or substrate, the at least one crystalline layer or substrate extending in at least one plane, and including at least one outer surface and at least one depression extending from the at least one outer surface; and —polishing the at least one outer surface using ion beam etching (IBE) or an accelerated inert gas ion beam, the ion beam being incident on the at least one outer surface at non-normal incidence or at a non-zero angle (θ) with respect to the surface normal of the at least one plane of the crystalline layer or substrate. 140-. (canceled)41. Polishing method comprising the steps of:providing at least one crystalline layer or substrate, the at least one crystalline layer or substrate extending in at least one plane, and including at least one outer surface and at least one depression extending from the at least one outer surface; andpolishing the at least one outer surface using accelerated inert gas ion beam etching or ion beam etching, the ion beam being incident on the at least one outer surface at non-normal incidence or at a non-zero angle θ with respect to the surface normal of the at least one plane of the crystalline layer or substrate.42. Method according to claim 41 , wherein the ion beam is incident on the at least one outer surface at non-normal incidence or at a non-zero angle with respect to the surface normal of the at least one plane of the crystalline layer or substrate to carry-out selective etching of the at least one outer surface.43. Method according to claim 41 , wherein the ion beam is incident on the at least one outer surface at non-normal incidence or at a non-zero angle with respect to the surface normal of the at least one plane of the crystalline layer or substrate to more quickly etch the at least one outer surface relative to the at least one depression claim 41 , or to provide a smaller material removal rate in the at least one depression ...

Method of material deposition

A method and apparatus for material deposition onto a sample to form a protective layer composed of at least two materials that have been formulated and arranged according to the material properties of the sample.

CHARGED PARTICLE BEAM APPARATUS AND SAMPLE PROCESSING OBSERVATION METHOD

Disclosed are a charged particle beam apparatus and a sample processing observation method, the method including: a sample piece formation process in which a sample is irradiated with a focused ion beam such that a sample piece is cut out from the sample; a cross-section processing process in which the sample piece support holds the sample piece and a cross section thereof is irradiated with the ion beam to process the cross section; a sample piece approach movement process in which the sample piece support holds the sample piece and the sample piece is moved to a position that is closer to an electron beam column than an intersection point of beam optical axes of the ion beam and an electron beam is; and a SEM image acquisition process in which the cross section is irradiated with the electron beam to acquire the SEM image of the cross section. 1. A charged particle beam apparatus comprising: a focused ion beam column emitting a focused ion beam; an electron beam column emitting an electron beam; a stage on which a sample is placed; a sample piece support holding a sample piece , which is cut out from the sample , including an observation target portion; and a control device controlling operation of the focused ion beam column , the electron beam column , the stage , and the sample piece support ,wherein the control device performs, when acquiring an SEM image of a cross section including the observation target portion of the sample, control to move the sample piece to a position that is closer to the electron beam column than to an intersection point of a beam optical axis of the focused ion beam and a beam optical axis of the electron beam.2. The charged particle beam apparatus of claim 1 , wherein the control device performs claim 1 , when forming the cross section with the focused ion beam claim 1 , control to move the sample piece to the intersection point.3. The charged particle beam apparatus of claim 1 , wherein the control device claim 1 , in at least one ...

AUTOMATED TEM SAMPLE PREPARATION

Techniques are described that facilitate automated extraction of lamellae and attaching the lamellae to sample grids for viewing on transmission electron microscopes. Some embodiments of the invention involve the use of machine vision to determine the positions of the lamella, the probe, and/or the TEM grid to guide the attachment of the probe to the lamella and the attachment of the lamella to the TEM grid. Techniques that facilitate the use of machine vision include shaping a probe tip so that its position can be readily recognized by image recognition software. Image subtraction techniques can be used to determine the position of the lamellae attached to the probe for moving the lamella to the TEM grid for attachment. In some embodiments, reference structures are milled on the probe or on the lamella to facilitate image recognition. 1. A method for automated sample preparation in a charged particle beam system , comprising:loading a work piece into a vacuum chamber having one or more charged particle beam systems and a sample manipulation probe;removing material surrounding a thin section of the work piece using a focused ion beam leaving the thin section attached to the bulk work piece by small attachment structures;shaping the tip of a sample manipulator probe into a machine-recognizable shape by removing material from the tip using the focused ion beam;using the machine-recognizable shape of the tip to determine the position of the tip relative to the thin section;using the position of the tip relative to the thin section, automatically moving the sample probe sufficiently close to the thin section to attach the manipulator probe using charged particle beam-induced deposition;attaching the sample probe to the thin section;severing said small attachment structures so that the thin section is supported only by the sample probe;moving the sample probe automatically so that the thin section is sufficiently close to a sample grid for holding thin samples to attach ...

Microscopy imaging method and system

Notches or chevrons with known angles relative to each other are formed on a surface of the sample, where each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

Method of specimen processing in an apparatus with two or more particle beams and apparatus for this processing

A method and apparatus for processing a specimen with two or more particle beams, wherein the specimen has a milled side that is processed by a first particle beam and observed by a second particle beam. The specimen is milled during a first milling operation by the first particle beam with the specimen in a first position. Thereafter, the specimen tilts in a second position around an axis of tilt of the specimen. Thereafter, the specimen is milled during a second milling operation. Milling can be performed during continuous tilting of the specimen around the axis of tilt. The axis of tilt of the specimen intersects the milled side. In all the aforementioned positions of the specimen, the second particle beam impinges on the milled side, which enables monitoring of the milling in real time.

TOMOGRAPHY-ASSISTED TEM PREP WITH REQUESTED INTERVENTION AUTOMATION WORKFLOW

Provided is a process for lamella thinning and endpointing that substitutes a series of automated small angle tilts for the motions in the conventional endpointing sequence. STEM images or through-surface BSE scans are acquired at each tilt. The results are analyzed automatically to determine feature depths, and an intervention request is made requesting a user decision based on marked-up images and summary information displayed. 1. A process for preparing a site specific ultra-thin sample lamella with a focused ion beam and scanning electron microscope (FIB-SEM) dual-beam system including one or more electronic controllers and tangible , non-transitory computer readable memory coupled to the one or more electronic controllers containing program code executable by the one or more electronic controllers for performing the automated steps of the process , the process comprising:(a) mounting a workpiece lamella having two opposing major lateral sides to a movable sample mount and positioning the movable sample mount within a chamber of the dual beam system;(b) under automatic control of at least one of the controllers, directing an ion beam toward the mounted workpiece lamella to mill away a layer of material from one of the major lateral sides of the workpiece;(c) under automatic control of at least one of the controllers, tilting the workpiece lamella within the chamber in a pre-designated small-angle tilt series and at each respective tilt orientation of the tilt series acquiring a STEM projection using the SEM of the dual-beam system, the tilt series of sufficient size to create a tomographic reconstruction capable of identifying feature depths;(d) after performing (c), automatically with of at least one of the controllers calculating a tomographic reconstruction of the acquired projections;(e) automatically with of at least one of the controllers, identifying one or more selected features in the tomographic reconstruction and automatically applying metrology to ...

Measurement and endpointing of sample thickness

The invention relates to a method of determining the thickness of a sample. According to this method, a diffraction pattern image of a sample of a first material is obtained. Said diffraction pattern image comprises at least image values representative for the diffraction pattern obtained for said sample. A slope of said image values is then determined. The slope is compared to a relation between the thickness of said first material and the slope of image value of a corresponding diffraction pattern image of said first material. The determined slope and said relation are used to determine the thickness of said sample.