View port device for plasma process and process observation device of plasma apparatus

A view port device for a plasma process and a process observation device of a plasma apparatus are provided. The view port device for a plasma process comprises a first substrate portion, a second substrate portion, and a connecting portion. The first substrate portion has a first through hole. The second substrate portion has a second through hole and a second diffusion space. A cross-sectional area of the second diffusion space is larger than that of the second through hole. The connecting portion is disposed between the first substrate portion and the second substrate portion.

Plasma generating device

A plasma generating device includes a first plasma electrode and a counter electrode facing each other. The first plasma electrode extends in a lateral direction and includes two projections. Each of the two projections protrudes from the first plasma electrode in the direction of the counter electrode over a predetermined distance. The plasma generating device further includes a preload mechanism adapted for urging each of said two projections of the first plasma electrode against the counter electrode. The two projections cooperatively define a plasma gap between the first plasma electrode and the counter electrode. The counter electrode includes a support surface facing said plasma gap. The support surface is substantially flat along the plasma gap.

Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof

An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor , a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode , a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power. 115-. (canceled)16. A plasma processing apparatus comprising a vacuum reactor , a lower electrode placed in a processing chamber of the vacuum reactor and capable of having placed thereon a wafer , a bias supplying mechanism for supplying a bias power of a plurality of different frequencies to the lower electrode , a gas supply mechanism for introducing a reactive gas into the processing chamber , a pressure control mechanism for controlling a pressure in the processing chamber , an electromagnetic wave supplying mechanism for supplying electromagnetic wave for generating plasma in the processing chamber , and a control device which respectively controls the bias supplying mechanism , the gas supply mechanism , the pressure control mechanism , and the electromagnetic wave supplying mechanism;wherein the bias supplying mechanism comprisesan ion energy distribution control mechanism for controlling a distribution of energy of ions being incident on the wafer, anda plasma status detector for detecting the plasma status,and wherein the plasma status detector detects the impedance of the plasma when a high-frequency bias power of a plurality of different frequencies are supplied ...

SUBSTRATE TREATING APPARATUS AND INSPECTION METHOD

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit located in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the interior of the process chamber, a plasma generating unit including an upper electrode having a through-hole, through which the process gas flows, and a shower head having a hole, through which the process gas is ejected into the treatment space, and an inspection unit configured to inspect a coupling state of the shower head and the upper electrode while an optical fiber is interposed between the upper electrode and the shower head. 1. A substrate treating apparatus comprising:a process chamber having a treatment space in the interior thereof;a support unit located in the process chamber to support a substrate;a gas supply unit configured to supply a process gas into the interior of the process chamber;a plasma generating unit including an upper electrode having a through-hole, through which the process gas flows, and a shower head having a hole, through which the process gas is ejected into the treatment space; andan inspection unit configured to inspect a coupling state of the shower head and the upper electrode while an optical fiber is interposed between the upper electrode and the shower head.2. The substrate treating apparatus of claim 1 , wherein the inspection unit includes:the optical fiber disposed between the upper electrode and the shower head;a light source configured to irradiate light to the optical fiber; anda measurement unit configured to monitor the coupling state of the shower head and the upper electrode by detecting the light that passed through the optical fiber.3. The substrate treating apparatus of claim 2 , wherein the measurement unit calculates a phase change of the light claim 2 , and determines the coupling state of the shower head and the upper ...

METHOD FOR INSPECTING SHOWER PLATE OF PLASMA PROCESSING APPARATUS

The present disclosure provides a method for inspecting a shower plate of a plasma processing apparatus. In the plasma processing apparatus, a gas ejection unit includes a shower plate. A plurality of gas ejection holes are formed on the shower plate. This method includes (i) setting a flow rate of gas output from a first flow rate controller, and (ii) acquiring a measurement value indicating a pressure in a flow path inside a second pressure control type flow rate controller by using a pressure gauge of the second flow rate controller in a state where the gas output from the first flow rate controller at the set flow rate is supplied to the gas ejection unit and branched between the first flow rate controller and the gas ejection unit so as to be supplied to the flow path inside the second flow rate controller. 1. A method for inspecting a shower plate of a plasma processing apparatus comprising:a chamber body;a placing table that is provided inside a chamber provided by the chamber body; anda gas ejection unit that is provided above the placing table and has the shower plate including a plurality of gas ejection holes formed therein,the method comprising:setting a flow rate of gas output from a first flow rate controller; andacquiring a measurement value indicating a pressure in a flow path inside a second pressure control type flow rate controller by using a pressure gauge of the second flow rate controller in a state where the gas output from the first flow rate controller at the set flow rate is supplied to the gas ejection unit and branched between the first flow rate controller and the gas ejection unit so as to be supplied to the flow path inside the second flow rate controller.2. The method of claim 1 , wherein the measurement value is an average value of a plurality of instantaneous values of the pressure.3. The method of claim 1 , wherein a flow path length from the second flow rate controller to an opening end of the shower plate on a side of the chamber ...

PLASMA GENERATOR AND CLEANING AND PURIFYING APPARATUS INCLUDING THE SAME

A cleaning and purifying apparatus detects an abnormal event that occurs during use of the plasma generator and controls plasma discharge based on the result of detection. 1. A cleaning and purifying apparatus , comprising a plasma generator , wherein the plasma generator includes:a liquid accommodation portion accommodating liquid including at least water;a gas accommodation accommodating gas;a partition wall portion which separates the liquid accommodation portion from the gas accommodation portion and includes a gas passage which allows the gas in the gas accommodation portion to pass through and introduces the gas to the liquid accommodation portion;a first electrode provided for the gas accommodation portion;a second electrode which is distant from the first electrode and at least a part of which on the side paired with the first electrode comes into contact with the liquid in the liquid accommodation portion;a gas supply portion which supplies gas containing at least oxygen to the gas accommodation portion in a mode where the gas of the gas accommodation portion is pressure-fed to the liquid accommodation portion through the gas passage; anda plasma power supply supplying a predetermined voltage between the first and second electrodes and generating discharge between the first and second electrodes to turn into plasma, the gas introduced into the gas accommodation portion in the liquid accommodated in the liquid accommodation portion, andplasma discharge is controlled based on a result of detection of an abnormal event that occurs during use of the plasma generator.2. The cleaning and purifying apparatus according to claim 1 , wherein a body thereof is provided with an openable lid claim 1 , and plasma discharge is generated only when the lid is closed.3. The cleaning and purifying apparatus according to claim 1 , further comprising a weight detection portion detecting the weight of an electric shaver claim 1 , whereinplasma discharge is generated only when ...

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes: a process chamber; a plasma excitation device that generates plasma; a stage in the chamber; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and has a window section through which the substrate is partly exposed to plasma; and a movement device that moves a relative position of the cover to the frame. The cover has a roof section, a cylindrical circumferential side section extending from a circumferential edge of the roof section toward the stage, and a correction member that protrudes from the roof section and/or the circumferential side section toward the frame and presses the frame onto the stage to correct warpage of the frame. 1. A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier which has an annular frame and a holding sheet , the plasma processing apparatus comprising:a chamber that has a process chamber configured to be decompressed;a plasma excitation device that generates plasma in the process chamber;a stage in the chamber, on which the transport carrier is loaded;a cooling mechanism configured to cool the stage;a cover that covers a part of the holding sheet and at least a part of the frame of the transport carrier loaded on the stage and that has a window section through which at least a part of the substrate is exposed to plasma; anda movement device that moves a relative position of the cover with respect to the frame, wherein a roof section that faces the frame loaded on the stage,', 'a cylindrical circumferential side section that extends from a circumferential edge of the roof section to a side of the stage, and', 'a correction member that protrudes from the roof section and/or the circumferential side section toward the frame loaded on the stage and presses the frame ...

EDGE RING OR PROCESS KIT FOR SEMICONDUCTOR PROCESS MODULE

The present invention generally relates method and apparatus for detecting erosion to a ring assembly used in an etching or other plasma processing chamber. In one embodiment, a method begins by obtaining a metric indicative of wear on a ring assembly disposed on a substrate support in a plasma processing chamber prior to processing with plasma in the plasma processing chamber. The metric for the ring assembly is monitored with a sensor. A determination is made if the metric exceeds a threshold and generating a signal in response to the metric exceeding the threshold. 1. A ring for a plasma processing chamber , the ring comprising:a body having a top surface, a bottom surface and an inside diameter wall; anda wear indicator material disposed in the body, the wear indicator material spaced below the top surface of the body, the wear indicator material different than a material comprising the body.2. The ring of claim 1 , wherein the wear indicator material comprises:a cylindrical pin.3. The ring of claim 1 , wherein the wear indicator material comprises:an annular band.4. The ring of claim 1 , wherein the wear indicator material comprises:a reflectivity different than a reflectivity of the body of the edge ring.5. The ring of claim 1 , wherein the wear indicator material comprises:a material which emits ions that are different than ions emitted from the body when the wear indicator material and the body are exposed to a plasma.6. The ring of claim 1 , wherein the wear indicator material is SiO and the material of the body is quartz.7. A plasma processing chamber comprising:a chamber body having in internal volume;a substrate support disposed in the internal volume; a body having a top surface, bottom surface and inside diameter wall; and', 'a wear indicator material disposed in the body, the wear indicator material spaced below the top surface of the body, the wear indicator material different than a material comprising the body; and, 'a ring disposed on the ...

DEPOSITION SHIELD FOR PLASMA ENHANCED SUBSTRATE PROCESSING

Methods and apparatus for plasma processing of substrates are provided herein. In some embodiments, a deposition shield for use in processing a substrate having a given width may include a first plate having a first plurality of holes disposed through a thickness of the first plate; and a second plate disposed below the first plate and having a second plurality of holes disposed through a thickness of the second plate, wherein individual holes in the first plurality of holes and the second plurality of holes are not aligned. 1. A deposition shield for use in processing a substrate having a given width , comprising:a first plate having a first plurality of holes disposed through a thickness of the first plate; anda second plate disposed below the first plate and having a second plurality of holes disposed through a thickness of the second plate, wherein individual holes in the first plurality of holes and the second plurality of holes are not aligned.2. The deposition shield of claim 1 , wherein the first plate and the second plate are made of dielectric materials.3. The deposition shield of claim 1 , wherein the first plate and the second plate are made of quartz or ceramic.4. The deposition shield of claim 1 , wherein the first plate and the second plate have a diameter that is greater than the given width of the substrate.5. The deposition shield of claim 1 , further comprising:a plurality of spacers disposed between the first plate and the second plate to maintain the first and second plates in a spaced apart relation; anda plurality of legs to support the second plate in a desired position.6. The deposition shield of claim 5 , further comprising:a plurality of elongate members that pass through the second plate and are coupled to the first plate, wherein a portion of the elongate members that are disposed between the first and second plates form the plurality of spacers and wherein a portion of the elongate members that are disposed below the second plate form ...

Heat medium circulation system and substrate processing apparatus

A heat medium circulation system including: a resin pipe forming at least a portion of a circulation flow path for circulating a heat medium to a temperature control target; a cover surrounding an outer peripheral surface of the resin pipe; and an exhaust pipe connected to a space between the resin pipe and the cover so as to exhaust the heat medium permeating through the resin pipe and released to the space, wherein the cover includes an air supply port configured to introduce air into the space between the resin pipe and the cover while the heat medium is exhausted from the exhaust pipe.

PLASMA PROCESSING APPARATUS AND FILTER UNIT

A filter unit (IN) includes a housing formed of a cylindrical conductor. Further, in the housing , the air-core solenoid coils ALand BL; the first capacitors ACand BC; the troidal coils ALand BL; and the second capacitors ACand BCare arranged in this sequence from top to bottom. In the vicinity of the air-core solenoid coils ALand BL, a multiple number of rod-shaped comb-teeth members , which are extended in parallel to a coil axis direction, are provided adjacent to outer peripheries of the air-core solenoid coils ALand BLat a regular interval in a circumferential direction thereof. A comb teeth M are formed on an inner surface of each comb-teeth member , and the comb teeth M are inserted into winding gaps of the air-core solenoid coils ALand BL. 1. A plasma processing apparatus , including an external circuit of a power meter or a signal meter electrically connected via a line to an electrical member within a processing vessel in which a plasma process is performed , configured to reduce or block noises of multiple high frequency powers of different frequencies introduced from the electrical member into the line toward the external circuit by a filter provided on the line ,wherein the filter comprises:an air-core solenoid coil provided at an uppermost portion of the filter, when viewed from a side of the electrical member, and configured to block noises of a single or plural high frequency powers among the multiple high frequency powers except a high frequency power having a lowest frequency;insulating comb teeth inserted in winding gaps of the air-core solenoid coil locally at plural positions in a circumferential direction thereof;a coil having a core connected in series to the air-core solenoid coil, and configured to block a noise of the high frequency power having the lowest frequency; anda cylindrical conductor, accommodating or surrounding at least the air-core solenoid coil, configured to form, by being combined with the air-core solenoid coil, a ...

Showerhead shroud

A processing chamber includes an upper surface and a showerhead arranged to supply gases through the upper surface into the processing chamber. At least a portion of the showerhead extends above the upper surface of the processing chamber. A shroud enclosure is arranged on the upper surface of the processing chamber. The shroud enclosure is arranged around the portion of the showerhead extending above the upper surface of the processing chamber and is configured to isolate radio frequency interference generated by the showerhead.

AUTO FREQUENCY TUNED REMOTE PLASMA SOURCE

A remote plasma source is disclosed that includes a core element and a first plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element. The remote plasma source further comprises one or more coils disposed around respective second portions of the core element. The remote plasma source further includes an RF power source configured to drive a RF power signal onto the one or more coils that is based on a determined impedance of the plasma generating region. Energy from the RF power signal is coupled with the plasma generating region via the one or more coils and the core element. 1. A remote plasma source , comprising:a core element extending along a central axis;a plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element;one or more coils disposed around respective second portions of the core element; anda radio frequency (RF) power source configured to drive a RF power signal onto the one or more coils that is based on a determined impedance of the plasma generating region,wherein energy from the RF power signal is coupled with the plasma generating region via the one or more coils and the core element.2. The plasma source of claim 1 , wherein the power source is configured to select a frequency of the RF power signal based on the determined impedance of the plasma generating region.3. The plasma source of claim 2 , wherein the power source further comprises a tuning circuit coupled with the one or more coils claim 2 , and wherein the power source is configured to select the frequency of the RF power signal based on a resonance frequency of the tuning circuit.4. The plasma source of claim 3 , wherein the tuning circuit is a series resonance circuit comprising at least one capacitor disposed in series with the one or more coils.5. The ...

PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

In an inductively-coupled plasma torch unit, a coil, a first ceramic block, and a second ceramic block are arranged, parallel to one another, and an elongated chamber has an annular shape. Plasma generated inside the chamber is ejected toward a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the elongated chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. A rotating ceramic pipe having a cylindrical shape is provided so as to cause a refrigerant to flow into a cavity formed inside the ceramic pipe. Accordingly, it becomes possible to apply greater high-frequency power, thereby enabling fast plasma processing. 1. A plasma processing apparatus which uses an inductively-coupled plasma torch , comprising:an elongated and annular chamber that is surrounded with a dielectric member except for an opening portion, and that communicates with the opening portion;a gas supply pipe that introduces gas into the chamber;a coil that is disposed in the vicinity of the chamber;a high-frequency power source that is connected to the coil; anda substrate mounting table,wherein within the dielectric member surrounding the chamber, a portion configuring a surface which opposes the substrate mounting table is configured to include a cylinder arranged parallel to a longitudinal direction of the chamber.2. The plasma processing apparatus of claim 1 , further comprising:a rotary mechanism that rotates the cylinder around an axis of the cylinder.3. The plasma processing apparatus of claim 1 ,wherein the cylinder is a pipe having a cavity formed thereinside, and includes a mechanism for causing a refrigerant to flow into the cavity formed inside the cylinder.4. The plasma processing apparatus of claim 1 ,wherein the cylinder is longer than the chamber in the longitudinal direction.5. The plasma processing apparatus of claim 1 ,wherein the cylinder has a structure in which multiple ...

MOUNTING TABLE AND PLASMA PROCESSING APPARATUS

A mounting table includes a cooling table, a power feed body, an electrostatic chuck, a first elastic member and a clamping member. The power feed body is connected to the cooling table to transmit a high frequency power. A base of the electrostatic chuck has conductivity. An attraction unit has an attraction electrode and a heater therein, and is fastened to the base by metal bonding. The first elastic member is provided between the cooling table and the base to allow the electrostatic chuck to be spaced apart from the cooling table. The first elastic member forms, along with the cooling table and the base, a heat transfer space into which a heat transfer gas is supplied. The clamping member is contacted with the cooling table and the base, and allows the base and the first elastic member to be interposed between the cooling table and the clamping member. 1. A mounting table , comprising:a cooling table made of a metal and provided with a flow path for a coolant;a power feed body connected to the cooling table, made of aluminum or an aluminum alloy and configured to transmit a high frequency power from a high frequency power supply, an electrostatic chuck comprising a conductive base provided on the cooling table; and an attraction unit made of ceramics, having therein an attraction electrode and a heater, which is provided on the base and fastened to the base by metal bonding;a first elastic member having insulating property, which is provided between the cooling table and the base, and is configured to allow the electrostatic chuck to be spaced apart from the cooling table and configured to form, along with the cooling table and the base, a heat transfer space into which a heat transfer gas is supplied between the cooling table and the base; anda clamping member, made of a metal and in contact with the cooling table and the base, allowing the base and the first elastic member to be interposed between the cooling table and the clamping member.2. The mounting table ...

POWER CABLE WITH AN OVERMOLDED PROBE FOR POWER TRANSFER TO A NON-THERMAL PLASMA GENERATOR AND A METHOD FOR CONSTRUCTING THE OVERMOLDED PROBE

A transfer module for transferring power to a non-thermal plasma generator includes a power cable; a first epoxy; a second epoxy; an interface between the first epoxy and the second epoxy; and a well; the power cable including a conductor for conducting electrical power and an insulation layer for surrounding a portion of the conductor; the first epoxy being located within the well to surround the insulation layer; the second epoxy being located within the well to surround the conductor located within the well; the second epoxy being located outside the well to surround the conductor located outside the well. 1. A power cable attached to a transfer module for a non-thermal plasma generator , comprising:a conductor for conducting electrical power;an insulation layer surrounding a portion of said conductor; andan epoxy surrounding said conductor within a well within the transfer module.2. The power cable claim 1 , as claimed in claim 1 , wherein said epoxy surrounds said conductor outside the well within the transfer module.3. The power cable claim 2 , as claimed in claim 2 , wherein said epoxy does not surround a portion of said conductor located outside the well within the transfer module.4. The power cable claim 2 , as claimed in claim 2 , wherein said epoxy surrounding said conductor within the well within the transfer module has a first diameter and said epoxy surrounding said conductor outside the well within the transfer module has a second diameter claim 2 , said first diameter being greater than said second diameter.5. A power cable attached to a transfer module for a non-thermal plasma generator claim 2 , comprising:a conductor for conducting electrical power;an insulation layer surrounding a portion of said conductor;a first epoxy;a second epoxy; andan interface between said first epoxy and said second epoxy;said first epoxy being located within a well of the transfer module to surround said insulation layer;said second epoxy being located within the well ...

TEMPERATURE CONTROL SYSTEM AND TEMPERATURE CONTROL METHOD

There is provided a temperature control system, including: a stage configured to support a workpiece and provided with a heat exchange medium flow path formed within the stage, the heat exchange medium flow path including a first end and a second end; a first valve; a second valve; a first heat exchange medium supply device including a supply port which supplies a first heat exchange medium adjusted to have a first temperature and a recovery port; a second heat exchange medium supply device including a supply port which supplies a second heat exchange medium adjusted to have a second temperature higher than the first temperature and a recovery port; and a control device configured to control the first and second valves such that the first and second heat exchange mediums are alternately supplied to the first end of the heat exchange medium flow path. 1. A temperature control system , comprising:a stage configured to support a workpiece and provided with a heat exchange medium flow path formed within the stage, the heat exchange medium flow path including a first end and a second end, a heat exchange medium flowing from the first end to the second end of the heat exchange medium flow path;a first valve;a second valve;a first heat exchange medium supply device including a supply port which supplies a first heat exchange medium adjusted to have a first temperature and a recovery port, the supply port being connected to the first end of the heat exchange medium flow path through the first valve;a second heat exchange medium supply device including a supply port which supplies a second heat exchange medium adjusted to have a second temperature higher than the first temperature and a recovery port, the supply port of the second heat exchange medium supply device connected to the first end of the heat exchange medium flow path through the second valve; anda control device configured to control the first valve and the second valve such that the first heat exchange medium ...

ARRANGEMENT AND METHOD FOR COOLING A PLASMA-BASED RADIATION SOURCE

An arrangements and methods for cooling a plasma-based radiation source having a revolving element which is to be cooled, particularly for application in EUV radiation sources, is disclosed. The revolving element is immersed in the metal coolant in a first vessel of a primary cooling circuit, and a secondary cooling circuit with a cooling liquid evaporating at the desired operating temperature of the metal coolant has a control unit for controlling at least one atomizing arrangement in a differentiated manner and for selectively controlling a heater in case the determined temperature falls below a minimum operating temperature of the metal coolant. The at least one atomizing arrangement in a cooling section selectively sprays individual wall regions of the first vessel with the cooling liquid depending on the determined temperature of the metal coolant. 1. An arrangement for cooling a plasma-based radiation source having a revolving element , the arrangement comprising:a primary cooling circuit comprising a first vessel for holding a metal coolant in which the revolving element is at least partially immersed;means for circulating the metal coolant in the first vessel;means for maintaining a temperature of the metal coolant to a predetermined operating temperature above a melting point of the metal coolant; a cooling liquid that evaporates at the operating temperature of the metal coolant;', 'a second vessel enclosing at least one cooling section of the first vessel;', 'at least one atomizing arrangement for the cooling liquid to spray defined wall regions of the at least one cooling section with the cooling liquid depending on a temperature determined for the metal coolant;', 'a cooling unit for sucking evaporated cooling liquid out of the second vessel, for condensing and for returning the cooling liquid under pressure to the at least one atomizing arrangement; and', 'a control unit for controlling the means for maintaining the temperature of the metal coolant, the ...

SILICON PART FOR PLASMA ETCHING APPARATUS AND METHOD OF PRODUCING THE SAME

The present invention relates to a silicon part and a method of producing the silicon part. The silicon part is not worn quickly and particle formation is suppressed even if it is positioned in the reaction chamber of a plasma etching apparatus. The silicon part for the plasma etching apparatus is made of any one selected from a group consisting of poly-crystalline silicon, mono-like silicon, and single-crystalline silicon. Also, the silicon part includes boron as a dopant in a range from 1×10atoms/cc or higher to 1×10atoms/cc or lower. 1. A silicon part , which is used for a plasma etching apparatus and used in a reaction chamber of the plasma etching apparatus , whereinthe silicon part is made of any one selected from a group consisting of poly-crystalline silicon, mono-like silicon, and single-crystalline silicon, and{'sup': 18', '20, 'the silicon part includes boron as a dopant in a range from 1×10atoms/cc or higher to 1×10atoms/cc or lower.'}2. The silicon part for a plasma etching apparatus according to claim 1 , wherein an oxygen concentration the silicon part is 5×10atoms/cc or lower.3. The silicon part for a plasma etching apparatus according to claim 1 , wherein a nitrogen concentration in the silicon part is in a range from 7×10atoms/cc or higher to 4×10atoms/cc or lower.4. The silicon part for a plasma etching apparatus according to claim 2 , wherein a nitrogen concentration in the silicon part is in a range from 7×10atoms/cc or higher to 4×10atoms/cc or lower.5. The silicon part for a plasma etching apparatus according to claim 1 , wherein a percentage of crystal orientation distribution in a (111) area is 70% or more claim 1 , the percentage of crystal orientation distribution in a (111) area being obtained by measuring crystal orientation on a surface of the silicon part by an EBSD method to obtain crystal orientation distribution in a stereographic triangle whose vertexes correspond to crystal surfaces (001) claim 1 , (101) claim 1 , and (111) claim ...

PLASMA SHIELDING MEMBERS, PLASMA DETECTING STRUCTURES, AND PLASMA REACTION APPARATUSES

A plasma shielding member may include a body having a first surface and a second surface that are opposite to each other, and a plurality of through holes each extending from the first surface to the second surface; a narrower portion of a respective through hole formed at one end of each of the through holes; and/or a wider portion of the respective through hole formed at another end of each of the through holes. A plasma shielding member may include a body including a plurality of through holes that extends from a first surface of the body toward a second surface of the body. Each of the through holes may be defined by a narrower portion of the body at a first end of the respective through hole, and by a wider portion of the body at a second end of the respective through hole. 1. A plasma shielding member , comprising:a body having a first surface and a second surface that are opposite to each other, and a plurality of through holes each extending from the first surface to the second surface;a narrower portion of a respective through hole formed at one end of each of the plurality of through holes; anda wider portion of the respective through hole formed at another end of each of the plurality of through holes.2. The plasma shielding member of claim 1 , wherein the narrower portion of the respective through hole is formed in the first surface of the body claim 1 , andwherein the second surface of the body is configured to receive a light transmission member that transmits plasma beams passed through the plurality of through holes.3. The plasma shielding member of claim I claim 1 , wherein each of the plurality of through holes extends from the narrower portion of the respective through hole to the wider portion of the respective through hole while forming an inclined surface.4. The plasma shielding member of claim 3 , wherein each of the plurality of through holes has a cross-section which claim 3 , when seen from a side surface of the respective through hole ...

APPARATUS FOR TREATING SUBSTRATE

Provided is an apparatus for treating a substrate which is capable of uniformly controlling a temperature of a support plate. The apparatus for treating the substrate includes a chamber having a treating space with an opened top surface, a support unit disposed within the chamber to support the substrate, a dielectric assembly disposed on the opened top surface of the chamber to cover the opened top surface, and a plasma source disposed above the dielectric assembly, the plasma source including an antenna generating plasma from a gas supplied into the chamber. The dielectric assembly includes a dielectric window, and heating units each of which is formed of a non-metallic material, the heating units being disposed on a top surface of the dielectric window to heat the dielectric window. 1. An apparatus for treating a substrate , the apparatus comprising:a chamber having a treating space with an opened top surface;a support unit disposed within the chamber to support the substrate;a dielectric assembly disposed on the opened top surface of the chamber to cover the opened top surface; anda plasma source disposed above the dielectric assembly, the plasma source comprising an antenna generating plasma from a gas supplied into the chamber,wherein the dielectric assembly comprises:a dielectric window; andheating units each of which is formed of a non-metallic material, the heating units being disposed on a top surface of the dielectric window to heat the dielectric window.2. The apparatus of claim 1 , wherein claim 1 , when viewed from above claim 1 , the dielectric window is divided into a first area facing the antenna and a second area that does not face the antenna claim 1 , andthe heating units are disposed on the second area.3. The apparatus of claim 1 , wherein claim 1 , when viewed from above claim 1 , the dielectric window is divided into a first area facing the antenna and a second area that does not face the antenna claim 1 , andthe heating units are ...

THERMAL SPRAYING METHOD AND DEVICE THEREFOR

The invention relates to a thermal spraying method, in particular for coating a surface by means of a plasma beam, using a shaped plasma beam, wherein a first plasma beam by means of at least one second plasma beam is controlled and/or shaped, wherein the second plasma beam at least partially and at least temporarily penetrates the first plasma beam. 1. Thermal spraying method for coating a surface by means of a plasma beam , wherein a first plasma beam by means of at least one second plasma beam is unified and/or shaped to form the plasma beam , wherein the second plasma beam at least partially and at least temporarily penetrates the first plasma beam.2. Thermal spraying method according to claim 1 , wherein the plasma beam resulting from the first plasma beam and from the second plasma beam claim 1 , compared with the first and the second plasma beam claim 1 , has a wider and more homogenous plasma jet.3. Thermal spraying method according to claim 1 , wherein the at least one second plasma beam in relation to the first plasma beam is aligned at a predefinable angle claim 1 , wherein the angle will be unequal to 0 or 180°.4. Thermal spraying method according to claim 3 , wherein the at least one second plasma beam in relation to the first plasma beam is aligned at a predefinable angle between 15 and 45 degrees.5. Thermal spraying method according to claim 1 , wherein a coating powder is added to the first plasma beam.6. Thermal spraying method according to claim 4 , wherein the surface is a surface of a running strip claim 4 , and that the second plasma beam is aligned counter to the running direction of the running strip to be coated.7. Device for carrying out a thermal spraying method by means of a plasma beam claim 4 , having a first source for a first plasma beam claim 4 , wherein a second source for a second plasma beam claim 4 , which second source is disposable in such a manner that the second plasma beam at least partially and at least temporarily ...

SEMICONDUCTOR PROCESSING APPARATUS AND PRE-CLEAN SYSTEM

A semiconductor processing apparatus includes an electromagnetic generator, an analog signal module, and an electromagnetic shield. The electromagnetic generator is capable of generating an electromagnetic field. The analog signal module is located adjacent to the electromagnetic generator and capable of generating an analog signal. The electromagnetic shield is capable of shielding the analog signal module. The electromagnetic shield includes a plurality of covering plates. Each of the covering plates and the analog signal module are apart from at least a predetermined distance. 1. A semiconductor processing apparatus comprising:an electromagnetic generator configured to generate an electromagnetic field;an analog signal module located adjacent to the electromagnetic generator and configured to generate an analog signal; andan electromagnetic shield configured to shield the analog signal module, the electromagnetic shield comprising a plurality of covering plates, wherein each of the covering plates and the analog signal module are apart from at least a predetermined distance.2. The semiconductor processing apparatus of claim 1 , wherein the predetermined distance is equal to or larger than 20 mm.3. The semiconductor processing apparatus of claim 1 , wherein the electromagnetic generator comprises a remote plasma power supply claim 1 , a radio-frequency power supply claim 1 , or an electric magnet.4. The semiconductor processing apparatus of claim 1 , wherein the analog signal module comprises a gauge claim 1 , a controller claim 1 , or a driver.5. The semiconductor processing apparatus of claim 1 , wherein the covering plates entirely seal the analog signal module.6. The semiconductor processing apparatus of claim 1 , wherein the electromagnetic shield further comprises a fixing bracket fixed to a housing of the electromagnetic generator.7. The semiconductor processing apparatus of claim 1 , wherein the thickness of each of the covering plates is equal to or ...

APPARATUS AND METHOD FOR HANDLING AN IMPLANT

An apparatus for plasma treatment of an implant prior to installing the implant in a live subject is provided. The apparatus comprises an activation device and a portable container detachable from the activation device. The portable container comprises a closed compartment containing the implant immersed in a fluid, and the activation device comprises a slot configured to receive the portable container. The activation device further comprises an electrical circuit configured to be electrically associated with at least one electrode and configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the closed compartment, when the portable container is disposed in the slot. A container suitable for providing plasma treatment to a silicone implant and a method for preparing an implant for implantation surgery are also provided. 159-. (canceled)60. A plasma chamber for plasma treating an implant made of an electrically isolating material prior to installing the implant in a live subject , the plasma chamber comprising:a closable compartment having an internal surface with a bottom and a top, the closable compartment defining an internal space adapted to house the implant;a spacer projecting from said bottom and configured to support the implant above said bottom, while contacting the implant along a surface area smaller than about 5% of a total surface area of the implant; andat least one electrode on said bottom and on said top of said closable compartment, respectively, said electrodes having a tip positioned in a hollow cavity of said internal surface, the electrodes being configured to electrically associate with an electromagnetic (EM) power source to generate a plasma generating EM field inside said closable compartment.61. The plasma chamber of wherein said implant includes a breast implant and the internal space is shaped as a dome.62. The plasma chamber of claim 60 , further comprising a liquid ...

SUBSTRATE TREATING APPARATUS AND METHOD

Provided is a substrate treating apparatus. The substrate treating apparatus includes a process chamber in which a predetermined process is performed on a substrate, a pressure meter measuring a pressure within the process chamber, and a controller receiving the measured pressure value from the pressure meter to determine an opening time of the process chamber. The controller opens the process chamber when a set condition elapses from a time at which the pressure within the process chamber reaches a preset opening pressure. 1. A substrate treating apparatus comprising:a process chamber in which a predetermined process is performed on a substrate;a pressure meter measuring a pressure within the process chamber; anda controller receiving the measured pressure value from the pressure meter to determine an opening time of the process chamber,wherein the controller opens the process chamber when a set condition elapses from a time at which the pressure within the process chamber reaches a preset opening pressure.2. The substrate treating apparatus of claim 1 , wherein the predetermined process comprises a process for treating the substrate by using a supercritical fluid claim 1 , andthe set condition is a state in which a set time elapses from the time at which the pressure within the process chamber reaches the preset opening pressure.3. The substrate treating apparatus of claim 2 , wherein the set time ranges from about 1 second to about 60 seconds.4. The substrate treating apparatus of claim 3 , wherein the opening pressure is the same as an atmospheric pressure.5. The substrate treating apparatus of claim 4 , further comprising a first exhaust line for exhausting a gas within the process chamber to the outside of the process chamber.6. The substrate treating apparatus of claim 5 , further comprising:a second exhaust line branched from the first exhaust line; anda decompression pump disposed on the second exhaust line,wherein the controller controls the decompression ...

LIFE ENHANCEMENT OF RING ASSEMBLY IN SEMICONDUCTOR MANUFACTURING CHAMBERS

The present invention generally relates to a ring assembly that may be used in an etching or other plasma processing chamber. The ring assembly generally includes an inner ring body having a top planar surface and a bottom planar surface, and an outer ring body having a top surface, a bottom surface substantially parallel to the top surface, and an inside surface that extends between the top surface and the bottom surface, the inside surface having a roof covering a portion of the inner ring body when the inner ring body is disposed adjacent the roof, wherein the inner ring body can be flipped into a different position so that a portion of the inner ring body that is not covered by the roof provides a substantially planar surface. 1. A ring assembly , comprising:an inner ring body having a top planar surface and a bottom planar surface; andan outer ring body having a top surface, a bottom surface substantially parallel to the top surface, and an inside surface that extends between the top surface and the bottom surface, wherein the inside surface has a roof and a portion of the inner ring body is symmetrically nestable under the roof against the outer ring body in two orientations.2. The ring assembly of claim 1 , wherein the outer ring body further comprises:an outside surface extending between the top and bottom surfaces;a first annular extension extending from the bottom surface in a direction away from the top surface and from a location spaced from the outside surface;a second annular extension extending from the bottom surface in a direction away from the top surface, the second annular extension abutting the inside surface; anda third annular extension extending from the outer ring body in a direction away from the outside surface, the third annular extension forming part of the inside surface.3. The ring assembly of claim 2 , wherein the third annular extension has a surface slanted at an angle relative to the top surface of outer ring body.4. The ring ...

METHOD AND DEVICE FOR PERMANENT BONDING OF WAFERS

A method for bonding of a first contact area of a first substrate to a second contact area of a second substrate, the second substrate having a least one reaction layer, and a device for carrying out said method. The method comprises: (a) accommodating the substrates between a first electrode and a second electrode, or within a coil, (b) formation of a reservoir on the first contact area by exposing the first contact area to a plasma (c) at least partially filling of the reservoir with a first educt or a first group of educts, (d) contacting the first contact area with the second contact area for formation of a pre-bond interconnection, (e) forming a permanent bond between the first and second contact areas at least partially strengthened by the reaction of the first educt with a second educt which is contained in the reaction layer of the second substrate. 1. A method for bonding of a first contact area of a first substrate to a second contact area of a second substrate , the second substrate having at least one reaction layer , said method comprising:{'sub': 21', '22, 'receiving the substrates into a plasma chamber or into a substrate chamber which is connected to a plasma chamber, the plasma chamber having at least first and second generators for respectively generating alternating current at different first and second frequencies (f, f), to produce the plasma,'}forming a reservoir in a reservoir formation layer on the first contact area of the first substrate by applying a plasma, which has been produced in the plasma chamber, to the first contact area,at least partially filling the reservoir with a first educt or a first group of educts,contacting the first contact area of the first substrate with the second contact area of the second substrate to form a pre-bond interconnection, andforming a permanent bond between the first and second contact area at least partially strengthened by the reaction of the first educt with a second educt which is contained in the ...

TEMPERATURE MEASURING METHOD, SUBSTRATE PROCESSING SYSTEM AND COMPONENT TO BE PROVIDED IN SUBSTRATE PROCESSING APPARATUS OF THE SUBSTRATE PROCESSING SYSTEM

A temperature measuring method of a component of a substrate processing chamber including a surface being worn or being deposited with a foreign material by using. The method includes: providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component; measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; and obtaining a temperature of the component by comparing the measured optical path length with the data. 1. A temperature measuring method of a component disposed in a substrate processing chamber , the component including at least one surface being worn or being deposited with a foreign material with a lapse of time , the method comprising:providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component;measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; andobtaining a current temperature of the component by comparing the measured optical path length with the data,wherein the predetermined path is set such that a portion of the low-coherence light entering into the component through a first surface of the component which is not worn and is not deposited with a foreign material is reflected at a reflection surface of the component to proceed to a second surface of the component which is not worn and is not deposited with a foreign material and travels back along a route through which the portion of the low-coherence light has traveled, after being ...

Plasma viewport

Plasma viewports for high-temperature environments in semiconductor processing equipment are disclosed; such view-ports may use a triple-window design, with each window providing particular functionality.

Plasma detecting device

Disclosed is a detection device which includes a measurement unit including an illumination sensor that measures an amount of light in an interior of a chamber, and a detection unit that detects whether plasma is generated in the interior of the chamber, through analysis of the amount of the light.

Plasma thermal shield for heat dissipation in plasma chamber

Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma thermal shield for a plasma processing chamber includes an annular ring body having an inner opening. A plasma-facing surface of the annular ring body has a general topography. A bottom surface of the annular ring body reciprocates the general topography with recessed regions disposed therein, providing one or more protruding regions at the bottom surface of the annular ring body.

Method and equipment for removing photoresist residue after dry etch

A method for removing photoresist residue includes etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device, and exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen. The method further includes cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid.

APPARATUS AND METHOD FOR CONTROLLING WAFER UNIFORMITY

An apparatus for controlling wafer uniformity is disclosed. In one example, the apparatus includes: a plurality of temperature control elements and a processor. Each of the temperature control elements corresponds to a different portion of a wafer respectively such that the temperature control elements correspond to different portions of the wafer. Each of the temperature control elements is configured to individually control temperature of a corresponding portion of the wafer. The processor determines at least one portion of the wafer for temperature uniformity control, and instruct at least one of the temperature control elements, corresponding to the at least one portion, to adjust temperature of the at least one portion for controlling temperature uniformity of the wafer. 1. An apparatus for controlling wafer uniformity , comprising: each of the temperature control elements corresponds to a different portion of a wafer respectively such that the temperature control elements correspond to different portions of the wafer, and', 'each of the temperature control elements is configured to individually control temperature of a corresponding portion of the wafer; and, 'a plurality of temperature control elements, wherein'} determine at least one portion of the wafer for temperature uniformity control, and', 'instruct at least one of the temperature control elements, corresponding to the at least one portion, to adjust temperature of the at least one portion for controlling temperature uniformity of the wafer., 'a processor configured to'}2. The apparatus of claim 1 , wherein the different portions corresponding to the temperature control elements have a same size.3. The apparatus of claim 1 , wherein the different portions corresponding to the temperature control elements are evenly distributed on the wafer.4. The apparatus of claim 1 , wherein at least one of the different portions corresponding to the temperature control elements has a shape different from an annulus ...

In situ control of ion angular distribution in a processing apparatus

A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

A plasma processing apparatus includes a chamber , a mounting table , a focus ring , a first electrode plate and a second electrode plate . The focus ring is provided around the mounting table to surround a mounting surface of the mounting table . The first electrode plate is provided above the mounting table . The second electrode plate is provided around the first electrode plate to surround the first electrode plate and is insulated from the first electrode plate . The plasma processing apparatus , in a first process, performs a preset processing on a semiconductor wafer W mounted on the mounting surface with plasma generated within the chamber, and, in a second process, increases an absolute value of a negative DC voltage applied to the second electrode plate depending on an elapsed time of the first process. 1. A plasma processing method performed by a plasma processing apparatus ,wherein the plasma processing apparatus comprises:a chamber;a mounting table, provided within the chamber, having a mounting surface on which a processing target substrate is mounted;a focus ring provided around the mounting table to surround the mounting surface;a first upper electrode, provided above the mounting table, facing the mounting surface; anda second upper electrode which is provided around the first upper electrode to surround the first upper electrode and is insulated from the first upper electrode, andwherein the plasma processing method comprises:a first process of performing a preset processing on the processing target substrate mounted on the mounting surface with plasma generated within the chamber; anda second process of increasing an absolute value of a negative DC voltage applied to the second upper electrode depending on an elapsed time of the first process.2. The plasma processing method of claim 1 ,wherein the plasma processing apparatus determines, in the second process, the absolute value of the negative DC voltage applied to the second upper electrode based ...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING SYSTEM

A substrate processing apparatus includes a base member having an opening, a substrate holding member fixedly provided on the base member and configured to hold a plurality of substrates in multiple stages in a vertical direction, a plurality of shower plates provided to respectively face the substrates held by the substrate holding member and configured to supply a processing gas to the substrates existing thereunder in a shower shape, at least one gas introduction member configured to introduce the processing gas into the shower plates, a processing container provided to be able to make close contact with the base member and brought into close contact with the base member to define an arrangement space of the substrate holding member as a processing chamber, a heating device configured to heat the substrates in the processing chamber, and an exhaust mechanism configured to evacuate the processing chamber through the opening. 1. A substrate processing apparatus for performing a predetermined process on a substrate to be processed , comprising:a base member having an opening portion;a substrate holding member fixedly provided on the base member and configured to hold a plurality of substrates in multiple stages in a vertical direction at predetermined intervals;a plurality of shower plates provided so as to respectively face the substrates held by the substrate holding member and configured to supply a processing gas to the substrates existing thereunder in a shower shape;at least one gas introduction member provided integrally with the substrate holding member and configured to introduce the processing gas into the shower plates;a processing container provided so as to be able to make close contact with the base member and brought into close contact with the base member to define an arrangement space of the substrate holding member as a processing chamber;a heating device configured to heat the substrates in the processing chamber; andan exhaust mechanism ...

PLASMA PROCESSING APPARATUS

In a plasma processing apparatus, an additional viewing window is disposed between an infrared temperature sensor and a view window, and the additional viewing window is cooled to be retained at room temperature (20° C. to 25° C.), to reduce and to stabilize electromagnetic waves emitted from the viewing window. By correcting the value of the electromagnetic waves, the measurement precision of the temperature monitor is increased and it is possible to measure and to control the dielectric window temperature in a stable state. 1. A plasma processing apparatus , comprising:a processing chamber disposed in a vacuum container;gas supply means for supplying gas to the processing chamber;a sample stage which is disposed in the processing chamber and on which a sample to be processed is mounted;a planar member comprising a dielectric material which is disposed above the processing chamber to cover the processing chamber and through which an electric field supplied to form plasma in the processing chamber passes;an electric field supply path disposed outside the processing chamber for supplying the electric field to the planar member;an infrared sensor disposed on the outside the planar member apart therefrom for receiving an infrared ray emitted from the planar member and for thereby detecting temperature of the planar member;a first window member disposed between the planar member and the infrared sensor; anda second window member disposed between the planar member and the infrared sensor to be apart from the first window member, temperature of the second window member is in a predetermined range; and', 'at reception of the infrared ray having passed through the first and second window members, the infrared sensor detects the temperature of the planar member., 'the first and second window members comprising one and the same material, wherein2. The plasma processing apparatus according to claim 1 , wherein the temperature of the planar member is detected by correcting an ...

PLASMA-CHEMICAL COATING APPARATUS

In a known plasma-chemical coating apparatus, a plasma chamber is provided within which at least one linear antenna is arranged for producing a plasma by means of electromagnetic power, in which a supply for a carrier gas terminates and which comprises a plasma exit opening in the direction of a treatment chamber for a plasma-assisted modification of a substrate. Starting from this, to achieve cleaning cycles as in coating apparatuses with comparatively slow coating processes, it is suggested according to the invention that the plasma exit opening is configured as an elongated narrowing and defined preferably on both sides by cylinders which extend in parallel with each other and are rotatable about their cylinder axis, and that a cleaning zone is respectively provided for each of the cylinders, into which an area of the outer surface of the respective cylinder which is to be cleaned can be introduced by rotation about the cylinder axis. 1. A plasma-chemical coating apparatus comprising:a plasma chamber having at least one linear antenna arranged therein so as to produce a plasma by electromagnetic power,a carrier gas supply terminating in said plasma chamber and supplying a carrier gas thereto, andsaid plasma chamber having a plasma exit opening in a direction of a treatment chamber configured to provide a plasma-assisted modification of a substrate,wherein the plasma exit opening is a lengthwise-extending narrowing that is defined by at least one cylinder which is supported for rotation about a cylinder axis thereof, andwherein the apparatus has a cleaning zone into which an area of an outer surface of the cylinder is introduced by rotation about the cylinder axis and cleaned in said cleaning zone.2. The plasma-chemical coating apparatus according to claim 1 , wherein the apparatus further comprises a layer gas supply supplying a layer gas in an area distal to the narrowing.3. The plasma-chemical coating apparatus according to claim 1 , wherein a second cylinder ...

ETCHING DEVICE AND ETCHING METHOD

An etching device and an etching method. The etching device includes an etching chamber and a chuck located therein for clamping a substrate to be etched, a plasma generating device surrounding the etching chamber in an area and a gas nozzle distribution device for introducing etching gas, which is situated above the chuck in such a way that an etching gas stream is directed essentially perpendicular to a surface of the substrate to be etched. A moving mechanism may be used to change the distance between the gas nozzle distribution device and the chuck as a function of the etching mode. 1. An etching device , comprising:an etching chamber and a chuck located therein to clamp a substrate to be etched;a plasma generating device surrounding the etching chamber in an area; anda gas nozzle distribution device to introduce etching gas, the gas nozzle distribution device being situated above the chuck in such a way that an etching gas stream is directed perpendicular to a surface of the substrate to be etched;wherein the gas nozzle distribution device is movable with respect to the surface of the substrate to be etched in such a way that, in a plasma etching mode, the gas nozzle distribution device is situated at such a first distance from the surface that the etching gas stream passes through the area surrounded by the plasma generating device, and that, in a non-plasma etching mode, the gas nozzle distribution device is situated at such a second, smaller distance from the surface that the etching gas stream does not pass through the area surrounded by the plasma generating device.2. An etching device , comprising:an etching chamber and a chuck located therein to clamp a substrate to be etched;a plasma generating device surrounding the etching chamber in an area; anda gas nozzle distribution device to introduce etching gas, the gas nozzle distribution device being situated above the chuck in such a way that an etching gas stream is directed perpendicular to a surface of ...

FUME REMOVAL DEVICE AND SUBSTRATE TREATMENT DEVICE

Provided is a substrate processing apparatus. The substrate processing apparatus includes a process unit in which a process for processing substrates is performed, a loadport on which an accommodation container accommodating the substrates is disposed, a frame disposed between the process unit and the loadport to define an inner space, an internal container having an accommodation space communicating with the internal space and an inlet through which the substrates are loaded into or unloaded from the accommodation space, the internal container having a plurality of discharge holes in a rear surface facing the inlet, an external container disposed outside the internal container to define a discharge space communicating with the accommodation space through the discharge holes, an exhaust hole defined in the external container to communicate with the discharge space, and an exhaust line in which an exhaust pump forcibly exhausting the inside of the accommodation space is disposed, the exhaust line being connected to the exhaust hole. 1. A substrate processing apparatus comprising:a process unit in which a process for processing substrates is performed;a loadport on which an accommodation container accommodating the substrates is disposed;a frame disposed between the process unit and the loadport to define an inner space;an internal container having an accommodation space communicating with the internal space and an inlet through which the substrates are loaded into or unloaded from the accommodation space, the internal container having a plurality of discharge holes in a rear surface facing the inlet;an external container disposed outside the internal container to define a discharge space communicating with the accommodation space through the discharge holes;an exhaust hole defined in the external container to communicate with the discharge space; andan exhaust line in which an exhaust pump forcibly exhausting the inside of the accommodation space is disposed, the ...

METHOD FOR HANDLING AN IMPLANT

An apparatus for plasma treatment of an implant prior to installing the implant in a live subject is provided. The apparatus comprises an activation device and a portable container detachable from the activation device. The portable container comprises a closed compartment containing the implant immersed in a fluid, and the activation device comprises a slot configured to receive the portable container. The activation device further comprises an electrical circuit configured to be electrically associated with at least one electrode and configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the closed compartment, when the portable container is disposed in the slot. A container suitable for providing plasma treatment to a silicone implant and a method for preparing an implant for implantation surgery are also provided. 1. A method for preparing an implant for implantation by increasing wettability of at least a portion of an implant surface of the implant , the method comprising:placing the implant in a plasma chamber;generating plasma in a space adjoining the at least a portion of the implant surface, thereby rendering the portion of the implant surface hydrophilic;removing the implant from the plasma chamber; andimplanting the implant.2. The method of further comprising claim 1 , prior to the act of placing the implant in the plasma chamber claim 1 , unpacking the implant from a sterile package used for storing or for shipping the implant claim 1 , and wherein the acts of the method are carried out under sterile conditions.3. The method of wherein all the acts are carried out within less than one hour.4. The method of wherein all the acts are carried out within less than two hours.5. The method of wherein all the acts are carried out within less than six hours.6. The method of wherein all the acts are carried out within less than twelve hours.7. The method of wherein all the acts are carried ...

Method and apparatus for parts cleaning

The present invention provides a method and apparatus for cleaning parts used in substrate processing. In a method for cleaning parts of a substrate processing, plasma generated from cleaning gas is supplied together with a cooling medium to clean the parts, but the cooling medium may be provided at a lower temperature than the plasma.

METHOD AND EQUIPMENT FOR REMOVING PHOTORESIST RESIDUE AFER DRY ETCH

A method for removing photoresist residue includes etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device, and exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen. The method further includes cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid. 1. An apparatus , comprising:a chamber, the chamber configured to provide a reactive gas therein and to contain a semiconductor substrate having a front side and a back side;a UV transparent window on a top surface of the chamber;a top lamp module above the UV transparent window, the top lamp module having at least one UV lamp configured to generate UV light and irradiate the front side of the semiconductor substrate inside the chamber through the UV transparent window; andat least one side UV module inside the chamber, the at least one side UV module configured to generate or reflect UV light to irradiate at least a portion of the back side of the semiconductor substrate.2. The apparatus of claim 1 , wherein the top lamp comprises a dome reflector disposed above the at least one UV lamp and configured to reflect UV light toward the UV transparent window.3. The apparatus of claim 1 , wherein the at least one UV lamp in the top lamp module comprises a plurality of lamps physically extending outward radially from a center of a planar surface.4. The apparatus of claim 1 , wherein the at least one side UV module comprises at least one side UV lamp configured to generate UV light emitting toward the back side of the semiconductor substrate.5. The apparatus of claim 1 , wherein the at least one side UV module comprises at least one side reflector configured to reflect UV light from the top lamp module to the back side of the semiconductor substrate.6. The apparatus of claim 1 , where the reactive gas provided in the chamber ...

Direct Current Pulsing Plasma Systems

A plasma processing system is provided that includes a chamber having a lower electrode coupled to a substrate support and an upper electrode coupled to ground. The plasma processing system having a plasma processing volume that is defined between the upper electrode and the lower electrode. A direct current (DC) to direct current (DC) converter is provided to receive at an input a DC voltage input and supply at an output an amplified DC voltage signal that includes a radio frequency (RF) component. The DC voltage input follows a pulsing pattern that is digitally programmable. The output of the DC to DC convertor is connected to the lower electrode of the chamber. A controller is interfaced with the DC to DC converter to set the pulsing pattern. In one example, the DC to DC converter uses one of a bipolar or non-bipolar DC voltage supply and a RF generator is driven by a DC voltage supply. The RF generator is configured to produce a frequency ripple that defines the RF component.

Air Leak Detection In Plasma Processing Apparatus With Separation Grid

Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

MODULAR MICROPLASMA MICROCHANNEL REACTOR DEVICES, MINIATURE REACTOR MODULES AND OZONE GENERATION DEVICES

A preferred modular microplasma microchannel reactor device includes a microchannel array arranged with respect to electrodes for generation of plasma and isolated by dielectric from the electrodes. A cover covers a central portion of the microchannel array, while leaving end portions of the microchannel array exposed. A gas inlet and product outlet are arranged to permit flow into, through and out of the microchannel array. Reactor modules of the invention include pluralities of the modular reactor devices. The reactors devices can be arranged by a housing or a frame to be in fluid communication. A system of the invention arranges pluralities of modules. Preferred module housings, frames and reactors include structural features to create alignments and connections. Preferred modules include fans to circulate feedstock and reaction product. Other reactor devices provide plasma actuation for flow. 1. A modular microplasma microchannel reactor device , comprising:a microchannel array of a plurality of microchannel plasma devices including electrodes arranged with respect to the plurality of microchannels to stimulate plasma generation in the plurality of microchannels upon application of suitable voltage wherein the electrodes are isolated from the microchannels by dielectric;a gas inlet to the microchannels; anda gas product outlet from the microchannels; wherein a portion of the microchannels between the gas inlet and gas product outlet are covered by a cover, and the cover and device are structured to be modular to join with additional reactor devices.2. The device of claim 1 , wherein one of the electrodes comprises the cover that seals the plurality of microchannels between the gas inlet and gas outlet.3. The device of claim 1 , further comprising seals that seal the gas inlet and gas product outlet to provide fluid communication between the gas inlet and/or gas product outlet and another microchannel reactor device.4. A miniature microplasma reactor module claim ...

COOLING MECHANISM UTLIZED IN A PLASMA REACTOR WITH ENHANCED TEMPERATURE REGULATION

Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly. 1. A cooling mechanism disposed in a plasma processing apparatus comprising:a coil antenna enclosure formed in a processing chamber;a coil antenna assembly disposed in the coil antenna enclosure;a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly; anda baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.2. The cooling mechanism of claim 1 , wherein the air circulating elements are disposed above the coil antenna assembly.3. The cooling mechanism of claim 1 , wherein the baffle plate is disposed substantially parallel to a lid of the processing chamber.4. The cooling mechanism of claim 1 , further comprising:perforations formed through a bottom portion of the coil antenna enclosure.5. The cooling mechanism of claim 4 , wherein the baffle plate is disposed at a position horizontally above the perforation.6. The cooling mechanism of claim 1 , wherein the baffle plate has a central opening.7. The cooling mechanism of claim 6 , wherein the central opening of the baffle plate is located inward of the coil antenna assembly.8. The cooling mechanism of claim 1 , wherein the air circulating element has a center axis perpendicular to a ceiling of the coil antenna enclosure.9. The cooling mechanism of claim 1 , wherein the air circulating element has a center axis having a ...

POWER CABLE WITH AN OVERMOLDED PROBE FOR POWER TRANSFER TO A NON-THERMAL PLASMA GENERATOR AND A METHOD FOR CONSTRUCTING THE OVERMOLDED PROBE

A transfer module for transferring power to a non-thermal plasma generator includes a power cable; a first epoxy; a second epoxy; an interface between the first epoxy and the second epoxy; and a well; the power cable including a conductor for conducting electrical power and an insulation layer for surrounding a portion of the conductor; the first epoxy being located within the well to surround the insulation layer; the second epoxy being located within the well to surround the conductor located within the well; the second epoxy being located outside the well to surround the conductor located outside the well. 1. A power cable for a transfer module of a non-thermal plasma generator , comprising:a conductor for conducting electrical power, said conductor having a first portion and a second portion;an insulation layer surrounding said first portion of said conductor, said insulation layer not surrounding said second portion of said conductor; andan epoxy;said epoxy surrounding said insulation layer surrounding said first portion of said conductor, said insulation layer being located between said epoxy and said first portion of said conductor;said epoxy surrounding said second portion of said conductor not being surrounded by said insulation layer.2. The power cable claim 1 , as claimed in claim 1 , wherein said epoxy has a first portion and a second portion;said first portion of said epoxy surrounding said insulation layer surrounding said first portion of said conductor;said second portion of said epoxy surrounding said second portion of said conductor not being surrounded by said insulation layersaid first portion of said epoxy having a first diameter;said second portion of said epoxy having a second diameter;said first diameter being greater than said second diameter.3. The power cable claim 2 , as claimed in claim 2 , further comprising an interface between said first portion of said epoxy and said second portion of said epoxy.4. The power cable claim 2 , as ...

ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES

A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate. 1. A substrate processing system for selectively etching a layer on a substrate , comprising:an upper chamber region;an inductive coil arranged around the upper chamber region;a lower chamber region including a substrate support to support a substrate;a gas distribution device arranged between the upper chamber region and the lower chamber region and including a plate with a plurality of holes in fluid communication with the upper chamber region and the lower chamber region, wherein a surface to volume ratio of the holes is greater than or equal to 4;an RF generator to supply RF power to the inductive coil;a gas delivery system to selectively supply gas mixtures; anda controller configured to cause the gas delivery system to selectively supply an etch gas mixture to the upper chamber region and to strike plasma in the upper chamber region to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.2. The substrate processing system of claim 1 , wherein the plate includes a cooling plenum for circulating fluid in the gas distribution device to control a temperature of the gas distribution ...

GAS SUPPLY MEMBER, PLASMA PROCESSING APPARATUS, AND METHOD FOR FORMING COATING FILM

A gas supply member according to an embodiment includes: a base material that has a gas flow path capable of flowing a gas from an upstream side to a downstream side, a main surface arranged on the downstream side of the gas flow path in a direction intersecting an extending direction of the gas flow path, and a discharge port connecting the gas flow path and the main surface; and a film that contains at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and covers the main surface and a surface of the discharge port of the base material. The film covers the main surface and the surface of the discharge port such that a surface of the film does not have a surface orientation portion of which a normal intersects a normal of the main surface at 45° to 75°. 1. A gas supply member comprising:a base material that has:a gas flow path capable of flowing a gas from an upstream side to a downstream side,a main surface arranged on the downstream side of the gas flow path in a direction intersecting an extending direction of the gas flow path, anda discharge port connecting the gas flow path and the main surface; anda film that contains at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and covers the main surface and a surface of the discharge port of the base material,wherein the film covers the main surface and the surface of the discharge port such that a surface of the film does not have a surface orientation portion of which a normal intersects a normal of the main surface at 45° to 75°.2. The gas supply member according to claim 1 , whereinthe discharge port has a curved or planar surface between the main surface and the gas flow path, andthe film covering the surface of the discharge port has:a first face extending in a direction along the main surface;a second face extending in a direction along the extending direction of the gas flow path; andan apex angle formed by an intersection of ...

Semiconductor manufacturing apparatus and semiconductor manufacturing method

In one embodiment, a semiconductor manufacturing apparatus includes a housing configured to house a substrate, and a first temperature regulator configured to regulate a temperature of a fluid. The apparatus further includes first and second flow channels configured to divide the fluid supplied from the first temperature regulator, and a second temperature regulator configured to regulate a temperature of the fluid in the second channel. The apparatus further includes a fluid supply channel configured to join the fluid in the first flow channel and the fluid in the second flow channel and to supply the joined fluids to the housing, and a flow rate regulator configured to regulate a flow rate of the fluid in the first flow channel and a flow rate of the fluid in the second flow channel.

Apparatus for preventing contamination of self-plasma chamber

The present invention relates to a technology for increasing the reliability of measurement by preventing the contamination of a self-plasma chamber provided in order to monitor a deposition operation performed in a process chamber, and has a shielding means capable of preventing an inflow of negative electrode material, which is generated by a sputtering phenomenon, into a discharge chamber when a positive charge of plasma, which is generated in the self-plasma chamber, collides with a negative electrode.

ION SOURCE AND CLEANING METHOD THEREOF

An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode. 1. An ion source comprising:a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, wherein the ion source is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode, and wherein the ion source further comprises:a drive mechanism that adjusts a distance between the plasma chamber and the suppression electrode; anda control device configured to, prior to cleaning the suppression electrode, control the drive mechanism to move the suppression electrode or the plasma chamber in a first direction to increase the distance.2. The ion source as recited in claim 1 , wherein the control device is configured to determine claim 1 , based on a potential of the suppression electrode claim 1 , or a current flowing through the suppression electrode claim 1 , whether or not to continue the cleaning.3. The ion source as recited in claim 1 , wherein the control device is configured to control the drive mechanism to move the suppression electrode in a second direction orthogonal to the first direction.4. The ion source as recited in claim 3 , wherein the control device is configured to control the drive mechanism to rotate the suppression electrode about an axis that extends in a third direction orthogonal to the first direction and the second direction.5. The ion source as recited in claim 1 , wherein the control device is configured to control the drive mechanism to rotate the suppression electrode about an axis that extends in a second direction ...

SUBSTRATE TREATING APPARATUS

Provided is a substrate treating apparatus which treats a substrate using plasma. The substrate treating apparatus includes a processing chamber having an inner space in which process treatment is performed on a substrate, a cover member coupled to the processing chamber by a hinge part and rotating upwardly and downwardly with respect to the hinge part to open/close the processing chamber, and a close preventing member disposed on a sidewall of the cover member to prevent the cover member from being closed during upward rotation of the cover member. 1. A substrate treating apparatus , comprising:a processing chamber having an inner space in which process treatment is performed on a substrate;a cover member coupled to the processing chamber by a hinge part and rotating upwardly and downwardly with respect to the hinge part to open/close the processing chamber; anda close preventing member disposed on a sidewall of the cover member to prevent the cover member from being closed during upward rotation of the cover member.2. The substrate treating apparatus of claim 1 , wherein the close preventing member has a lower end which is provided at a position where it overlaps an upper wall of the processing chamber when viewed from the top.3. The substrate treating apparatus of claim 1 , wherein the close preventing member has an end which is pin-connected to a sidewall of the cover member claim 1 , and the other end provided as a free end.4. The substrate treating apparatus of claim 3 , wherein the close preventing member comprises a body part providing the end claim 3 , and a supporting part providing the other end.5. The substrate treating apparatus of claim 4 , wherein the close preventing member is convertible between a first state where the supporting part is disposed above the body part and a second state where the supporting part is disposed below the body part claim 4 ,wherein the conversion from the first state to the second state is performed by rotation of the ...

CHAMBER COMPONENT WITH FLUORINATED THIN FILM COATING

A chamber component comprises a body and a fluorinated thin film protective layer over at least one surface of the body. The fluorinated thin film protective layer does not react with process gasses having Fluorine based chemistry. The fluorinated thin film protective layer may be a YFlayer. 1. A chamber component of an etch reactor comprising:a body; anda fluorinated thin film protective layer over at least one surface of the body, wherein the fluorinated thin film protective layer does not react with process gasses having a Fluorine based chemistry.2. The chamber component of claim 1 , wherein the body comprises a metal.3. The chamber component of claim 1 , wherein the fluorinated thin film protective layer is conformal and has a thickness of less than 50 microns.4. The chamber component of claim 1 , wherein the body comprises at least one of a ceramic claim 1 , a glass or a polymer.5. The chamber component of claim 1 , wherein the chamber component comprises a showerhead claim 1 , a selectivity modulation device or a face plate.6. The chamber component of claim 1 , wherein the fluorinated thin film protective layer comprises YF.7. The chamber component of claim 1 , further comprising:a plasma sprayed protective layer on the surface of the body, wherein the fluorinated thin film protective layer is disposed on the plasma sprayed protective layer.8. The chamber component of claim 7 , wherein the plasma sprayed protective layer comprises YO.9. The chamber component of claim 1 , wherein the fluorinated thin film protective layer comprises an ion assisted deposition (IAD) deposited layer.10. The chamber component of claim 1 , wherein the fluorinated thin film protective layer is an amorphous layer.11. The chamber component of claim 1 , wherein the fluorinated thin film protective layer has an erosion rate of less than 0.07 μm per hour when exposed to a Fluorine based plasma.12. A method comprising:providing a chamber component; andperforming ion assisted deposition ( ...

Method and system for the removal and/or avoidance of contamination in charged particle beam systems

A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element; wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element, wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF

To provide an electronic component having a protective film formed with good uniformity, over the entire surface thereof. The electronic component has a protective film formed over the entire surface thereof, and the electronic component has elements and wirings formed on a base body. The protective film is formed by a CVD method, over an entire surface of the electronic component, by: arranging an electrode in a chamber; grounding one side of the chamber and the electrode; accommodating the electronic component in the chamber; supplying a raw material gas to the chamber; rotating or swinging the chamber and thereby moving the electronic component in the chamber; supplying high-frequency power to the other side of the chamber and the electrode; and generating a raw-material-gas-based plasma between the electrode and the chamber.

Apparatus and method for treating a substrate

An antenna and a substrate treating process utilizing the same are provided. The antenna may extend along an imaginary baseline having predetermined curvature and comprise a section where the distance between the baseline and intersection point between the antenna and a vertical line perpendicular to the baseline changes depending on a position on the baseline.

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode, a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power. 1. A plasma processing apparatus comprising a vacuum reactor , a lower electrode placed in a processing chamber of the vacuum reactor and capable of having placed thereon a sample , a bias supplying mechanism for supplying a bias power of a plurality of different frequencies to the lower electrode , a gas supply mechanism for introducing a reactive gas into the processing chamber , a pressure control mechanism for controlling a pressure in the processing chamber , an electromagnetic wave supplying mechanism for supplying electromagnetic wave for generating plasma in the processing chamber , and a control device which respectively controls the bias supplying mechanism , the gas supply mechanism , the pressure control mechanism and the electromagnetic wave supplying mechanism , whereinthe bias supplying mechanism comprisesan ion energy distribution control mechanism for controlling a distribution of energy of ions being incident on the sample, anda plasma status detector configured to detect a time variation of an impedance of the plasma when a high-frequency bias power of a plurality of different frequencies are supplied to the sample, and isolate the detected time variation of ...

EDGE RING OR PROCESS KIT FOR SEMICONDUCTOR PROCESS MODULE

The present invention generally relates method and apparatus for detecting erosion to a ring assembly used in an etching or other plasma processing chamber. In one embodiment, a method begins by obtaining a metric indicative of wear on a ring assembly disposed on a substrate support in a plasma processing chamber prior to processing with plasma in the plasma processing chamber. The metric for the ring assembly is monitored with a sensor. A determination is made if the metric exceeds a threshold and generating a signal in response to the metric exceeding the threshold. 1. A ring for a plasma processing chamber , the ring comprising:a body having a top surface, a bottom surface and an inside diameter wall; anda wear indicator material disposed in the body, the wear indicator material spaced below the top surface of the body, the wear indicator material different than a material comprising the body.2. The ring of claim 1 , wherein the wear indicator material comprises:a cylindrical pin.3. The ring of claim 1 , wherein the wear indicator material comprises:an annular band.4. The ring of claim 1 , wherein the wear indicator material comprises:a reflectivity different than a reflectivity of the body of the edge ring.5. The ring of claim 1 , wherein the wear indicator material comprises:a material which emits ions that are different than ions emitted from the body when the wear indicator material and the body are exposed to a plasma.6. The ring of claim 1 , wherein the wear indicator material is SiO and the material of the body is quartz.7. A plasma processing chamber comprising:a chamber body having in internal volume;a substrate support disposed in the internal volume; a body having a top surface, bottom surface and inside diameter wall; and', 'a wear indicator material disposed in the body, the wear indicator material spaced below the top surface of the body, the wear indicator material different than a material comprising the body; and, 'a ring disposed on the ...

SYSTEM AND METHOD OF POWER GENERATION WITH PHASE LINKED SOLID-STATE GENERATOR MODULES

A plasma generation system includes a reference clock, a plurality of solid state generator modules, and a processing chamber. The reference clock is configured to generate a reference signal. Each solid state generator module is linked to an electronic switch and each electronic switch is linked to the reference clock. The solid state generator modules are each configured to generate an output based on the reference signal from the reference clock. The processing chamber is configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein. 1. A plasma generation system comprising:a reference clock configured to generate a reference signal;a plurality of solid state generator modules, each solid state generator module linked to an electronic switch and each electronic switch linked to the reference clock, the solid state generator modules each configured to generate an output based on the reference signal from the reference clock; anda processing chamber configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein.2. The plasma generation system of claim 1 , further comprising an I/Q modulator configured to demodulate a signal at an input to the processing chamber into an I/Q signal claim 1 , wherein the plasma generation system is further configured to:determine a voltage standing wave ratio (VSWR) and a reflection coefficient of the I/Q signal;calculate a first impedance of one of the solid state generator modules based on the VSWR and the reflection coefficient; andcalculate a second impedance of a combined output power of the solid state generator modules within the processing chamber based on the first impedance.3. The plasma generation system of claim 2 , wherein the system is further configured to adjust phase claim 2 , magnitude claim 2 , and frequency of at least one of the ...

BONDING METHOD FOR CLEANING NON-BONDING SURFACE OF SUBSTRATE

A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface. 1. A bonding method , comprising:modifying a bonding surface of a first substrate and a bonding surface of a second substrate;hydrophilizing the modified bonding surface of the first substrate and the modified bonding surface of the second substrate;bonding the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; andcleaning, before the bonding is performed, a non-bonding surface opposite to the bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed.2. The bonding method of claim 1 ,wherein the cleaning comprises polishing the non-bonding surface.3. The bonding method of claim 1 ,wherein the cleaning comprises roughening the non-bonding surface.4. The bonding method of claim 3 ,wherein the cleaning comprises roughening the non-bonding surface of, between the first substrate and the second substrate, one which is deformed when the bonding is performed, except a peripheral portion thereof.5. The bonding method of claim 1 ,wherein the ...

Flourine based cleaning of an ion source

이온원의 내부 표면으로부터 침전물을 제거하는 침전물 세척 시스템은 불소원, 조절판 메커니즘 및 제어기를 포함한다. 불소원은 세척 물질로서 이온원에 불소를 공급한다. 조절판 메커니즘은 소스 입구를 적어도 부분적으로 커버함으로써 이온원의 소스 입구를 통한 불소의 손실을 감소시킨다. 제어기는 불소원으로부터 이온원으로의 공급 및 유속을 제어하며, 또한 조절판 메커니즘의 위치를 제어한다. 침전물 세척 시스템, 불소원, 조절판 메커니즘, 제어기, 이온원 A precipitate cleaning system for removing precipitate from the inner surface of an ion source includes a fluorine source, a throttle mechanism and a controller. The fluorine source supplies fluorine to the ion source as a cleaning material. The throttle mechanism at least partially covers the source inlet to reduce the loss of fluorine through the source inlet of the source. The controller controls the supply and flow rate from the fluorine source to the ion source and also controls the position of the throttle mechanism. Sediment washing system, fluorine source, throttle mechanism, controller, ion source

Plasma treatment apparatus

본 발명은 플라즈마 처리장치에 관한 것으로서, 보다 상세하게는 상부전극의 온도를 정밀하게 제어할 수 있는 플라즈마 처리장치에 관한 것이다. The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus capable of precisely controlling the temperature of an upper electrode. 본 발명에 의한 플라즈마 처리장치는 진공챔버; 상기 진공챔버의 내부 하측에 구비되며, 기판을 재치하는 하부전극; 상기 진공챔버의 내부 상측에 구비되는 상부전극; 및 상기 상부전극을 냉각하는 냉매가 흐르는 냉매유로가 형성된 냉각판;을 포함하며, 상기 냉매유로는 상기 상부전극의 복수영역을 담당하도록 복수개 형성되며, 상기 복수의 냉매유로는 상호 연결되지 않고 별개로 형성된다. Plasma processing apparatus according to the present invention comprises a vacuum chamber; A lower electrode provided below the vacuum chamber and on which the substrate is placed; An upper electrode provided inside the vacuum chamber; And a cooling plate having a coolant flow path through which a coolant for cooling the upper electrode flows, wherein the plurality of coolant flow paths are formed to cover a plurality of regions of the upper electrode, and the plurality of coolant flow paths are not connected to each other. Is formed. 플라즈마. 기판. 상부전극. 냉각판. plasma. Board. Upper electrode. Cold plate.

Plasma processing apparatus and plasma processing method

본 발명의 플라즈마 처리 장치는 챔버와, 상기 챔버 내에 마련된 차폐 부재와, 상기 차폐 부재와 대향 배치되어 챔버 내에 플라즈마를 발생시키는 제 1 고주파 발생부와, 상기 챔버의 측벽 외주연에 이격 마련된 안테나와, 상기 안테나에 연결된 고주파 전원을 포함하는 제 2 고주파 발생부와, 상기 차폐 부재와 제 1 고주파 발생부 사이에서 기판을 지지하는 기판 지지부를 포함하고, 상기 제 1 고주파 발생부에서 제 1 고주파 신호가 인가된 이후에 제 2 고주파 발생부에서 발생된 제 2 고주파 신호가 인가된다. The plasma processing apparatus of the present invention includes a chamber, a shielding member provided in the chamber, a first high frequency generator disposed opposite the shielding member to generate plasma in the chamber, an antenna spaced apart from the outer periphery of the side wall of the chamber, A second high frequency generator including a high frequency power source connected to the antenna, and a substrate support unit supporting a substrate between the shielding member and the first high frequency generator, wherein a first high frequency signal is applied to the first high frequency generator. After that, the second high frequency signal generated by the second high frequency generator is applied. 상기와 같은 발명은 기판 후면에 머무르는 반응 가스 및 플라즈마가 새는 것을 방지함으로써, 기판 후면의 식각률 및 식각 균일도를 높일 수 있는 효과가 있다. As described above, the reaction gas and the plasma remaining on the rear surface of the substrate are prevented from leaking, thereby increasing the etching rate and the etching uniformity of the rear surface of the substrate. 플라즈마, 제 1 고주파 발생부, 제 2 고주파 발생부, 챔버, 차폐 부재 Plasma, first high frequency generator, second high frequency generator, chamber, shield member

Deposition apparatus for High-Density Thin Film Deposition

박막의 생성 및 결합 조건을 조절함으로써 고품질의 박막을 제조할 수 있는 고밀도 박막증착을 위한 증착장치가 개시된다. 이는 공정 소스부의 배치 및 간격을 조절하거나 배기 공간의 높이를 조절함으로써 박막의 특성 및 증착 속도를 조절할 수 있어 공정 특성을 향상시킬 수 있다. 또한, 다수의 공정 소스부를 소정의 간격으로 이격되게 배치한 후, 소스 이동부를 이용하여 공정 소스부를 짧은 거리 이동시켜 증착 공정을 수행할 수 있기 때문에 고밀도 박막 증착이 가능하고 공정 시간을 단축시킬 수 있는 고밀도 박막증착을 위한 증착장치를 제공한다. Disclosed is a deposition apparatus for high-density thin film deposition capable of producing a high-quality thin film by controlling the formation and bonding conditions of the thin film. This can control the characteristics and the deposition rate of the thin film by adjusting the arrangement and spacing of the process source portion or adjusting the height of the exhaust space, thereby improving the process characteristics. In addition, since a plurality of process source portions are spaced apart from each other by a predetermined distance, and the source portion is used to move the process source portion a short distance, the deposition process can be performed. Therefore, high-density thin film deposition is possible and the process time can be shortened A deposition apparatus for high density thin film deposition is provided.

Apparatus for treating substrate and test method

기판 처리 장치가 개시된다. 기판 처리 장치는, 내부에 처리 공간이 형성된 공정 챔버, 공정 챔버 내부에 위치하며, 기판을 지지하는 지지 유닛, 공정 챔버 내부로 공정 가스를 공급하는 가스 공급 유닛, 공정 가스가 흐르는 관통홀이 형성되는 상부 전극, 공정 가스를 처리 공간으로 분사하는 홀이 형성되는 샤워 헤드를 포함하는 플라즈마 생성 유닛 및 상기 상부 전극과 상기 샤워 헤드 사이에 광섬유를 개재하여 상기 샤워 헤드와 상부 전극의 체결 상태를 검사하는 검사 유닛을 포함한다. A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber having a processing space formed therein, a support unit supporting a substrate, a gas supply unit supplying a process gas into the process chamber, and a through hole through which the process gas flows. A plasma generation unit including an upper electrode, a shower head having a hole for injecting a process gas into a processing space, and an inspection for inspecting a connection state between the shower head and the upper electrode through an optical fiber between the upper electrode and the shower head It includes a unit.

Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same

본 발명의 일 실시예는, 제1 파장 대역 및 상기 제1 파장 대역보다 긴 파장을 갖는 제2 파장 대역의 광을 포함하는 조사광을 생성하는 광원부; 상기 조사광을 측정 대상물에 조사하고, 상기 측정 대상물의 표면에서 반사된 반사광을 집광하는 광학부; 상기 광학부에서 집광된 상기 반사광을 제1 및 제2 광경로로 분기하는 광분할부; 상기 제1 광경로 상에 배치되며 상기 반사광에서 상기 제1 파장 대역의 제1 간섭광을 검출하는 제1 검출부; 상기 제2 광경로 상에 배치되며 상기 반사광에서 상기 제2 파장 대역의 제2 간섭광을 검출하는 제2 검출부; 및 상기 제1 간섭광에 기초하여 상기 측정 대상물의 표면 형상 및 두께 중 적어도 하나를 산출하고, 상기 제2 간섭광에 기초하여 상기 측정 대상물의 온도를 산출하는 제어부;를 포함하는 반도체 기판 측정 장치를 제공할 수 있다. An embodiment of the present invention includes: a light source unit generating irradiation light including light in a first wavelength band and a second wavelength band having a longer wavelength than the first wavelength band; an optical unit irradiating the irradiated light to the measurement object and condensing the reflected light reflected from the surface of the measurement object; a light splitter that branches the reflected light collected by the optical unit into first and second optical paths; a first detector disposed on the first optical path and configured to detect a first interference light of the first wavelength band from the reflected light; a second detector disposed on the second optical path and configured to detect a second interference light of the second wavelength band from the reflected light; and a controller configured to calculate at least one of a surface shape and a thickness of the measurement object based on the first interference light, and calculate a temperature of the measurement object based on the second interference light. can provide

Faraday shield and reaction chamber

本发明提供一种法拉第屏蔽件及反应腔室，其包括导电环体，在该导电环体上形成有开缝，该开缝包括第一子开缝，该第一子开缝沿导电环体的圆周方向设置，且与导电环体的轴线之间形成夹角，用以通过增加电磁场在导电环体的圆周方向上的电场分量的耦合效率，来增加该电磁场的总耦合效率。本发明提供的法拉第屏蔽件，其可以提高磁场耦合效率，从而可以降低需要向射频线圈加载的射频功率。

Method for inspecting shower plate of plasma processing apparatus

본 발명은 플라즈마 처리 장치의 샤워 플레이트를 검사하는 방법을 제공하는 것을 목적으로 한다. 일 양태에 따른 방법에 있어서 검사되는 플라즈마 처리 장치에서는, 가스 토출부가 샤워 플레이트를 갖는다. 샤워 플레이트에는, 복수의 가스 토출 구멍이 형성되어 있다. 이 방법은, (ⅰ) 제1 유량 제어기로부터 출력되는 가스의 유량을 설정하는 공정과, (ⅱ) 설정된 유량으로 제1 유량 제어기로부터 출력된 가스가 가스 토출부에 공급되고, 제1 유량 제어기와 가스 토출부 사이에서 분기되어 압력 제어식의 제2 유량 제어기의 내부의 유로에 공급되어 있는 상태에서, 상기 제2 유량 제어기의 압력계를 이용하여, 상기 제2 유량 제어기의 내부의 유로에 있어서의 압력을 나타내는 측정값을 취득하는 공정을 포함한다. An object of the present invention is to provide a method for inspecting a shower plate of a plasma processing apparatus. In the plasma processing apparatus inspected in the method according to an aspect, the gas discharge unit has a shower plate. A plurality of gas discharge holes are formed in the shower plate. This method comprises the steps of: (i) setting a flow rate of gas output from the first flow rate controller; (ii) gas output from the first flow rate controller at the set flow rate is supplied to the gas discharge unit; In the state that it is branched between the gas discharge units and is supplied to the flow path inside the pressure-controlled second flow rate controller, the pressure in the flow path inside the second flow rate controller is measured using the pressure gauge of the second flow rate controller. and acquiring the measured value indicated.

Plasma treatment device and filter unit

처리 용기 내의 고주파 전극 이외의 전기적 부재로부터 급전 라인 또는 신호선 등의 선로 상으로 들어오는 유해한 복수의 주파수의 고주파 노이즈에 대하여, 효율적이며 또한 안정적으로 확실하게 충분히 높은 임피던스를 부여하여, 플라즈마 프로세스의 재현성·신뢰성을 향상시킨다. 필터 유닛(54(IN))은, 접지된 원통 형상의 도체로 이루어지는 하우징(82) 내에, 공심 솔레노이드 코일(AL 1 , BL 1 ), 제 1 콘덴서(AC 1 , BC 1 ), 트로이덜 코일(AL 2 , BL 2 ) 및 제 2 콘덴서(AC 2 , BC 2 )를 위에서부터 아래로 이 순서로 배치하고 있다. 양 공심 솔레노이드 코일(AL 1 , BL 1 )의 주위에는, 그들 외주면에 인접하여, 코일축 방향과 평행하게 연장되는 봉 형상의 빗살 부재(86)가 둘레 방향으로 일정한 간격을 두고 복수 개 마련되어 있다. 각각의 빗살 부재(86)의 내측면에는, 양 솔레노이드 코일(AL 1 , BL 1 )의 권선 사이에 삽입되는 빗살(M)이 형성되어 있다. Reproducibility and reliability of the plasma process by efficiently and reliably imparting sufficiently high impedance against harmful multiple-frequency high-frequency noise that enters a line such as a power supply line or signal line from an electrical member other than a high-frequency electrode in the processing vessel. Improves. The filter unit 54 (IN) is in a housing 82 made of a grounded cylindrical conductor, air core solenoid coils AL 1 , BL 1 , first condensers AC 1 , BC 1 , and toroidal coils ( AL 2 , BL 2 ) and second capacitors (AC 2 , BC 2 ) are arranged in this order from top to bottom. Around both air core solenoid coils AL 1 and BL 1 , a plurality of bar-shaped comb members 86 are provided adjacent to their outer circumferential surfaces and extending parallel to the coil axis direction at regular intervals in the circumferential direction. Each comb member 86 has a comb tooth M inserted between the windings of the solenoid coils AL 1 and BL 1 on the inner surface thereof.

Apparatus and method for handling an implant

An apparatus for plasma treatment of an implant prior to installing the implant in a live subject is provided. The apparatus comprises an activation device and a portable container detachable from the activation device. The portable container comprises a closed compartment containing the implant immersed in a fluid, and the activation device comprises a slot configured to receive the portable container. The activation device further comprises an electrical circuit configured to be electrically associated with at least one electrode and configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the closed compartment, when the portable container is disposed in the slot. A container suitable for providing plasma treatment to a silicone implant and a method for preparing an implant for implantation surgery are also provided.

Substrate processing apparatus and inspection method

公开了一种基板处理设备。该基板处理设备包括：处理室，在其内部具有处理空间；支撑单元，位于处理室中以支撑基板；气体供应单元，配置成将处理气体供应到处理室的内部；等离子体产生单元，包括具有供处理气体流过的通孔的上电极，以及具有孔的喷头，所述喷头的孔用于供处理气体通过以被喷射到处理空间内；以及检查单元，配置成在将光纤插入在上电极和喷头之间时检查喷头和上电极的联接状态。

Plasma powder treating apparatus having rotating cylinder structure comprising tubular plasma structure

The present invention relates to an apparatus for treating powder using plasma and, more particularly, to a plasma powder treating apparatus having a rotating cylindrical structure including a tubular plasma structure. The plasma powder treating apparatus having a rotating cylindrical structure including a tubular plasma structure according to one embodiment of the present invention comprises: a cylindrical reactor capable of rotating around a central axis; a tubular plasma structure penetrating the cylindrical reactor; and an alternating current power source for applying alternating current voltage. The tubular plasma structure includes a housing which is a first electrode; a tubular dielectric penetrating the housing in the direction of the central axis of the cylindrical reactor; and a second electrode arranged along the inner circumference surface of the tubular dielectric. A gas supply hole is formed on one surface of the housing to supply gas for generating plasma. An opening is formed on the outer surface of the housing which is placed inside the cylindrical reactor. The alternating current power source is connected to the first electrode and the second electrode to generate plasma in the tubular plasma structure. The generated plasma flows from the tubular plasma structure through the opening to the cylindrical reactor to treat powder in the cylindrical reactor. [Reference numerals] (20) Pump; (300) Power supply device; (AA) Cooling water

Plasma processing apparatus

플라즈마 처리 장치에 있어서, 처리 용기의 관통 개구부에서의 국소적 플라즈마의 발생을 방지한다. 처리 용기의 관통 개구부의 개구 바닥면에는, 임피던스 조정 부재로서의 절연 부재(45)가 설치되어 있다. 절연 부재(45)는 비유전율이 10 이하, 바람직하게는 4 이하인 재료에 의해서 구성되어 있고, 절연 부재(45)에 의해서 플라즈마로부터 본 관통 개구부의 전기 임피던스를, 본체 용기(2A)의 라이너(60)보다 크게 해서, 게이트 개구부(41)에 있어서의 국소적 플라즈마의 발생을 방지할 수 있다. 절연 부재(45) 위에는 커버 부재(47)를 마련하고, 절연 부재(45)의 표면을 덮음으로써, 절연 부재(45)를 플라즈마에 의한 손상으로부터 보호할 수 있다. In the plasma processing apparatus, generation of a local plasma at the through-hole of the processing vessel is prevented. An insulating member (45) as an impedance adjusting member is provided on the opening bottom surface of the through-hole of the processing container. The insulating member 45 is made of a material having a relative dielectric constant of 10 or less, preferably 4 or less, and the electrical impedance of the through-hole, viewed from the plasma by the insulating member 45, , It is possible to prevent the occurrence of localized plasma in the gate opening 41. [0050] The cover member 47 is provided on the insulating member 45 and the surface of the insulating member 45 is covered so that the insulating member 45 can be protected from damage by the plasma.

Plasma processing apparatus

본 발명과 관련된 플라즈마 처리 장치는, 장치 본체; 상기 장치 본체에 설치되며, 대상물에 대하여 진공상태에서 플라즈마에 의한 처리를 할 수 있게 형성된 공정챔버를 포함하고, 상기 공정챔버는, 상기 대상물이 놓여질 공간을 제공할 수 있게 중공형태로 형성되며, 일 방향으로 연장된 진공튜브; 상기 튜브의 일 위치에 배치되며, 상기 진공튜브 내에 공급된 가스를 플라즈마화시키는 플라즈마 발생부; 상기 진공튜브를 감쌀 수 있게 형성되며, 상기 진공튜브의 외부공간을 밀폐시키는 외부진공쉘; 및 상기 진공튜브와 상기 외부진공쉘을 진공 상태로 구현할 수 있게 구성된 진공형성부를 포함한다. A plasma processing apparatus according to the present invention comprises: a device main body; And a processing chamber which is installed in the apparatus main body and is formed so as to be able to perform plasma treatment with respect to an object in a vacuum state, the processing chamber being formed in a hollow shape so as to provide a space in which the object is to be placed, A vacuum tube extending in the direction of the vacuum tube; A plasma generator disposed at a position of the tube for plasma-forming the gas supplied into the vacuum tube; An outer vacuum shell formed to surround the vacuum tube and sealing the outer space of the vacuum tube; And a vacuum forming part configured to realize the vacuum tube and the external vacuum shell in a vacuum state.

Door seal for vacuum chamber

본원에는, 팽창성 슬릿 밸브 개구 시일들을 갖는 진공 챔버들이 설명된다. 일 예에서, 진공 챔버는 챔버 몸체, 제1 팽창성 시일 및 제1 슬릿 밸브 도어를 포함한다. 챔버 몸체는 상부, 하부 및 측벽들을 갖는다. 제1 슬릿 밸브 개구가 측벽들에 형성된다. 제1 팽창성 시일은 측벽에 밀봉식으로 결합되고 제1 슬릿 밸브 개구를 둘러싸고 있다. 제1 팽창성 시일은 측벽에 결합된 베이스, 및 베이스에 대해 측방향으로 이동할 수 있는 중공 관형 부분을 갖는다. 제1 슬릿 밸브 도어는, 제1 슬릿 밸브 도어와 챔버 몸체 사이에 진공 시일을 제공하도록 제1 팽창성 시일과 접촉하는 폐쇄 상태와, 제1 슬릿 밸브 도어를 제1 슬릿 밸브 개구로부터 떨어지게 위치시키는 개방 상태 사이에서 이동 가능하다. Herein, vacuum chambers with expandable slit valve opening seals are described. In one example, the vacuum chamber includes a chamber body, a first expandable seal and a first slit valve door. The chamber body has upper, lower and side walls. First slit valve openings are formed in the side walls. The first expandable seal is hermetically coupled to the side wall and surrounds the first slit valve opening. The first expandable seal has a base coupled to the sidewall and a hollow tubular portion movable laterally relative to the base. The first slit valve door has a closed state in contact with the first expandable seal to provide a vacuum seal between the first slit valve door and the chamber body, and an open state in which the first slit valve door is positioned away from the first slit valve opening. It is possible to move between.

Apparaus for treating the substrate with plasma

본 발명은 플라즈마 밀도가 높고 균일한 아르곤 플라즈마를 대면적으로 발생시킬 수 있는 플라즈마 처리장치에 관한 것으로서, 본 발명에 따른 플라즈마 처리장치는, 피처리물을 플라즈마로 처리하는 플라즈마 처리장치에 있어서, RF 전원이 인가되는 원통 형상의 전원 전극; 상기 전원 전극의 양 측부에 설치되며, 상기 전원 전극과의 사이에 플라즈마 발생공간이 형성되도록 일정한 간격 이격되어 고정되는 접지전극; 상기 전원 전극과 접지 전극 사이의 공간으로 반응가스를 공급하는 반응가스 공급부; 상기 반응가스 공급부 및 접지 전극에 인접하게 설치되며, 냉매를 순환시켜 상기 플라즈마 처리장치를 냉각시키는 냉각부;를 구비하는 것을 특징으로 한다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus capable of generating a large area of plasma density and uniform argon plasma. The plasma processing apparatus according to the present invention is a plasma processing apparatus for processing an object to be treated with a plasma. A cylindrical power supply electrode to which power is applied; A ground electrode installed at both sides of the power electrode and fixed to be spaced apart at regular intervals so as to form a plasma generating space therebetween; A reaction gas supply unit supplying a reaction gas into a space between the power supply electrode and the ground electrode; And a cooling unit installed adjacent to the reaction gas supply unit and the ground electrode to circulate a refrigerant to cool the plasma processing apparatus.

Method and device for permanently bonding wafers

본 발명은 제2 기판(2)의 제2 접촉 영역(4)에 제1 기판(1)의 제1 접촉 영역(3)을 본딩하기 위한 방법 - 상기 제2 기판(2)은 적어도 하나의 반응층(7)을 가짐 - 에 관한 것으로, 상기 방법은, - 제1 전극(21)과 제2 전극(22) 사이, 또는 코일(26) 내에 기판을 수용하는 단계와, - 제1 접촉 영역(3)을 전극(21, 22)의 용량성 커플링에 의해 생성된 플라즈마에 노출시켜서, 제1 접촉 영역(3) 상의 저장소 형성층(6) 내에 저장소(5)를 형성시키기 위한 저장소를 형성하는 단계 - 제2 전극(22)의 제2 주파수(f 22 )와 상이한 제1 주파수(f 21 )는 플라즈마 생성 동안에 제1 전극(21)에 적용됨 - 이나, 제1 접촉 영역(3)을 코일(26)의 유도성 커플링에 의하여 생성된 플라즈마에 노출시켜서, 제1 접촉 영역(3) 상의 저장소 형성층(6) 내에 저장소(5)를 형성하는 - 제2 발전기(24)의 제2 주파수(f 22 )와 상이한 제1 주파수(f 21 )는 플라즈마 생성 동안에 제1 발전기(23)에 적용됨 - 와, - 제1 추출물이나 제1 추출물 그룹으로 저장소(5)를 적어도 부분적으로 채우는 단계와, - 사전-본딩 상호연결부의 형성을 위해 제2 접촉 영역(4)과 제1 접촉 영역(3)의 접촉을 만드는 단계와, - 제2 기판(2)의 반응층(7) 내에 포함된 제2 추출물과 제1 추출물의 반응에 의하여, 적어도 부분적으로 강화된 제1 접촉 영역(3)과 제2 접촉 영역(4) 사이에 영구적인 본딩을 형성하는 단계를 포함하고, 본 발명은 이에 대응되는 장치에 관한 것이다. A method for bonding a first contact area (3) of a first substrate (1) to a second contact area (4) of a second substrate (2), the second substrate (2) Having a layer (7), said method comprising the steps of: - receiving the substrate between the first electrode (21) and the second electrode (22), or in the coil (26) Exposing the first contact area 3 to the plasma generated by the capacitive coupling of the electrodes 21 and 22 to form the reservoir 5 in the reservoir forming layer 6 on the first contact area 3 A first frequency f 21 different from the second frequency f 22 of the second electrode 22 is applied to the first electrode 21 during plasma generation, 3) of the second generator 24 to expose the plasma generated by the inductive coupling of the coil 26 to form the reservoir 5 in the reservoir forming layer 6 on the first contact area 3 A first frequency f 21 different from the second frequency f 22 is applied to the first generator 23 during plasma generation, - at least partially filling the reservoir (5) with a first extract or a first extract group, Making contact between the second contact area (4) and the first contact area (3) for the formation of a pre-bonding ...

PLASMA GENERATOR AND CLEANING AND DISINFECTION DEVICE CONTAINING SUCH PLASMA GENERATOR

1. Устройство очистки и обеззараживания, содержащее плазменный генератор, в которомплазменный генератор включает в себя:элемент для размещения жидкости, в котором размещается жидкость, включающая в себя, по меньшей мере, воду;элемент для размещения газа, в котором размещается газ;элемент разделительной перегородки, который отделяет элемент для размещения жидкости от элемента для размещения газа и включает в себя газовый канал, позволяющий газу в элементе для размещения газа проходить и попадать в элемент для размещения жидкости;первый электрод, предназначенный для элемента для размещения газа;второй электрод, находящийся на удалении от первого электрода, и по меньшей мере часть которого, находящаяся на стороне, связанной с первым электродом, приходит в контакт с жидкостью в элементе для размещения жидкости;элемент подачи газа, который подает газ, содержащий, по меньшей мере, кислород, в элемент для размещения газа в режиме, когда газ в элементе для размещения газа подается под давлением в элемент для размещения жидкости через газовый канал; иплазменный источник электропитания, подающий заданное напряжение между первым и вторым электродами и создающий разряд между первым и вторым электродами, чтобы превратить в плазму газ, поданный в элемент для размещения газа, в жидкости, находящейся в элементе для размещения жидкости, иплазменный разряд управляется на основе результата обнаружения аномального события, происходящего во время использования плазменного генератора.2. Устройство очистки и обеззараживания по п. 1, в котором его корпус снабжен открывающейся крышкой, и плазменный разряд создается, только ког РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2013 158 945 (13) A (51) МПК C02F 1/48 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (71) Заявитель(и): ПАНАСОНИК КОРПОРЭЙШН (JP) (21)(22) Заявка: 2013158945/05, 06.06.2012 Приоритет(ы): (30) Конвенционный приоритет: 15.07.2011 JP 2011-156443 (85) Дата начала рассмотрения заявки PCT на ...

Plasma processing apparatus

【課題】伝熱ガスの通孔において異常放電を防止する埋込部材を有するプラズマ処理装置を提供する。【解決手段】被処理体が載置される載置面及び前記載置面に対する裏面を有し、前記載置面と前記裏面を貫通する第１の通孔が形成された誘電体部材と、前記誘電体部材を支持する支持面を有し、前記第１の通孔に連通する第２の通孔が形成された基台と、を有する載置台と、前記第１の通孔及び前記第２の通孔の内部に配置された埋込部材と、を備え、前記埋込部材は、前記第１の通孔に配置された第１の埋込部材と、前記第２の通孔に配置された第２の埋込部材と、を有し、前記第２の埋込部材は、前記第１の埋込部材より剛性が低い、プラズマ処理装置。【選択図】図２

Flourine based cleaning of an ion source

A deposit cleaning system for removing deposits from interior surfaces of ion sources includes a fluorine source, a throttle mechanism, and a controller. The fluorine source supplies fluorine to the ion source as a cleaning material. The throttle mechanism mitigates loss of fluorine through a source aperture of the ion source by at least partially covering the source aperture. The controller controls the supply and flow rate from the fluorine source to the ion source and also controls the positioning of the throttle mechanism.

Plasma treatment device and filter unit

[Problem] To improve the repeatability and reliability of a plasma process by efficiently, stably, and robustly applying a sufficiently high impedance to harmful high-frequency noise of a plurality of frequencies entering lines such as power-feeding lines or signal wires from high-frequency electrodes and/or other electrical members inside a treatment vessel. [Solution] In this filter unit (54(IN)), air-core solenoid coils (AL 1 , BL 1 ), first capacitors (AC 1 , BC 1 ), toroidal coils (AL 2 , BL 2 ), and second capacitors (AC 2 , BC 2 ) are laid out, in that order from top to bottom, inside a housing (82) comprising a grounded cylindrical conductor. A plurality of rod-shaped comb-tooth members (86) that are parallel to a coil-axis direction are provided at regular circumferential intervals around the air-core solenoid coils (AL 1 , BL 2 ), next to the outer surfaces thereof. Comb teeth (M) that fit between the windings of the solenoid coils (AL 1 , BL 1 ) are formed on the inside surfaces of said comb-tooth members (86).

Method and system for the removal and/or avoidance of contamination in charged particle beam systems

A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element; wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element, wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

Method and apparatus for continuously bonding wafers

Interchangeable sputter gun head

In some embodiments, apparatus are provided that provide for flexible processing in both high productivity combinatorial (HPC) and full wafer modes. The apparatus allow for interchangeable functionality that includes deposition with different sizes of targets, plasma treatment, ion beam treatment, and in-situ metrology. The functional modules are designed so that the modules may be interchanged with minimal effort and reduced system downtime.

Plasma processing apparatus, plasma processing method, and method for manufacturing electronic device

In an inductively-coupled plasma torch unit, a coil, a first ceramic block, and a second ceramic block are arranged parallel to one another, and an elongated chamber has an annular shape. Plasma generated inside the chamber is ejected toward a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the elongated chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. A rotating ceramic pipe having a cylindrical shape is provided so as to cause a refrigerant to flow into a cavity formed inside the ceramic pipe. Accordingly, it becomes possible to apply greater high-frequency power, thereby enabling fast plasma processing.

Etching method and etching device

エッチングにおいて垂直性を高める技術を提供する。プラズマ処理装置において被エッチング膜をエッチングするエッチング方法であって、前記プラズマ処理装置は、チャンバと、前記チャンバ内に設けられ、前記基板を支持するように構成された基板支持器と、を備え、前記エッチング方法は、前記被エッチング膜を有する基板を前記基板支持に配置する工程と、ＨＦガスを含む処理ガスを前記チャンバ内に供給する工程と、第１の周波数を有する高周波により前記チャンバ内に前記処理ガスのプラズマを生成する工程と、前記第１の周波数よりも低い第２の周波数で、パルス電圧を周期的に前記基板支持器に印加する印加工程と、を含む。

Method of plasma processing and plasma processing apparatus

本发明提供抑制伴随聚焦环的消耗而产生的孔的倾斜度的变动的等离子体处理装置(1)，其包括腔室(10)、载置台(16)、聚焦环(24a)、第1电极板(36)和第2电极板(35)。聚焦环(24a)以包围载置台(16)的载置面的方式设置在载置台的周围。第1电极板设置在载置台的上方。第2电极板以包围第1电极板的方式设置在第1电极板的周围，与第1电极板绝缘。等离子体处理装置在第1步骤中利用在腔室内生成的等离子体对载置于载置台的载置面的半导体晶片(W)实施规定的处理。另外，等离子体处理装置在第2步骤中根据第1步骤的经过时间，使施加在第2电极板的负的直流电压的绝对值增加。

Warming-up method and etching method

本发明提供一种暖机方法及刻蚀方法，该暖机方法包括：控温阶段，检测绝缘筒的温度，并在所述绝缘筒的温度小于预设的温度范围时，进行升温工艺，以控制反应腔室的绝缘筒的温度维持在预设的温度范围内，所述升温工艺为等离子体起辉加热所述反应腔室；工艺阶段，进行暖机工艺，以使所述反应腔室达到需求工艺气氛。通过本发明，提高了暖机效率，节省了暖机时间并且减少了暖机成本。

Vacuum chamber having inflatable seal

本文描述具有數個可膨脹的狹縫閥開口之密封件的真空腔室。在一示例中，一真空腔室包含一腔室主體、一第一可膨脹密封件及一第一狹縫閥門。 腔室主體具有一頂部、一底部及數個側壁。一第一狹縫閥開口形成在該些側壁中。第一可膨脹密封件密封地連接至該些側壁中的一者並外接第一狹縫閥開口。第一可膨脹密封件具有耦接至該些側壁中的一者的一基部及可相對於基部側向移動的一中空管狀部。第一狹縫閥門可移動於該第一狹縫閥門接觸第一可膨脹密封件以在第一狹縫閥門與腔室主體之間提供一真空密封的一關閉狀態與使第一狹縫閥門脫離該第一狹縫閥開口的一開啟狀態之間。

Management System for Chamber for Plasma Processing

Disclosed are a system and method for managing the inside of a chamber used in a plasma process and a method for measuring the inside of a chamber. The system for managing the inside of a chamber for a plasma process according to an embodiment of the present invention includes: a chamber inner state measuring unit including a dielectric which is located on a wall surface of a chamber to be adjacent to the inside of the chamber and has one side on which charges can be accumulated, a first electrode disposed on the other side of the dielectric, and a second electrode disposed on the same plane as the first electrode and located on the other side of the dielectric; and an operation unit for acquiring capacitance information between the first electrode and the second electrode by using the first electrode and the second electrode of the chamber inner state measuring unit. Accordingly, the present invention can determine a cleaning time by quantitatively measuring contaminants deposited inside the chamber.

Semiconductor manufacturing apparatus

The semiconductor manufacturing device according to the present embodiment comprises: an ultraviolet rays forming part that is located in an ultraviolet rays forming chamber, and forming a linear plasma by irradiating a focused electron beam (e-beam) to form the ultraviolet rays of a desired wavelength; a substrate driving part comprising a chuck positioned in a processing chamber, wherein a loaded substrate is processed with the ultraviolet rays to support the loaded substrate, and an axis that rotates the chuck; and a window that transmits the ultraviolet rays positioned and formed between the ultraviolet rays forming chamber and the processing chamber to the processing chamber. Therefore, the present invention is capable of providing an advantage for which static electricity formed on a pattern can be neutralized.

Method for determining cleaning condition and plasma processing apparatus

本发明提供一种清洁条件的决定方法和等离子体处理装置，能够适宜地对腔室内进行清洁。清洁条件的决定方法执行以下步骤：在腔室内以基板处理条件来处理基板；基于多个不同的清洁条件执行所述腔室内的清洁，来获取发光强度数据；基于所述发光强度数据来评价所述清洁条件；基于所述评价来选择所述清洁条件。

Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same

A semiconductor substrate measuring apparatus includes a light source unit generating irradiation light including light in a first wavelength band and light in a second wavelength band. An optical unit irradiates the irradiation light on a measurement object and condenses reflected light. A light splitting unit splits the reflected light, condensed in the optical unit, into a first optical path and a second optical path. A first detecting unit is disposed on the first optical path and detects first interference light in the first wavelength band in the reflected light. A second detecting unit is disposed on the second optical path and detects second interference light in the second wavelength band in the reflected light. A controlling unit calculates at least one of a surface shape or a thickness of the measurement object. The controlling unit calculates a temperature of the measurement object.

apparatus and method for manipulating an implant

é fornecido um aparelho para o tratamento com plasma de um implante antes da instalação do implante em uma matéria viva. o aparelho compreende um dispositivo de ativação e um recipiente portátil removível do dispositivo de ativação. o recipiente portátil compreende um compartimento fechado que contém o implante imerso num fluido, e o dispositivo de ativação compreende uma ranhura configurada para receber o recipiente portátil. o dispositivo de ativação compreende ainda um circuito elétrico configurado para ser eletricamente associado com pelo menos um eletrodo e configurado para proporcionar à pelo menos uma potência elétrica de eletrodo adequada para aplicar um campo elétrico gerador de plasma no compartimento fechado, quando o recipiente portátil está disposto na ranhura. é também fornecido um recipiente adequado para proporcionar tratamento com plasma para um implante de silicone e um método para a preparação de um implante para cirurgia de implantação. An apparatus for plasma treatment of an implant is provided prior to implant placement in a living matter. the apparatus comprises an activation device and a removable portable container of the activation device. the portable container comprises a closed compartment containing the implant immersed in a fluid, and the activating device comprises a slot configured to receive the portable container. The activating device further comprises an electrical circuit configured to be electrically associated with at least one electrode and configured to provide at least one electrode electrical power suitable for applying a plasma generating electric field to the enclosure when the portable container is disposed. in the slot. Also provided is a suitable container for providing plasma treatment for a silicone implant and a method for preparing an implant for implant surgery.

Plasma processing device and running processing method and method for manufacturing electric device

本发明提供一种利用不需要远距离腔室和专用微波源等的简单结构就能够清洁处理室内的淀积物的技术。本发明的等离子体处理装置，利用在波导管中传播的、并向在处理室内面上配置的电介质传播的微波，使提供到处理室内的规定气体等离子体化，从而对在处理室内配置的被处理体实施等离子体处理，其中在波导管内，形成至少一部分由通过电介质材料构成的分隔壁包围的空间部，设置通过此空间部，向处理室中提供清洁气体的清洁气体流路。

GAS SUPPLY MEMBER, PLASMA PROCESSING APPARATUS, AND COATING FILM FORMATION METHOD

Atmospheric pressure plasma treatment apparatus

본 발명은 대기압 플라즈마 처리 장치에 관한 것으로, 금속 도체로 형성되어 양(+)전압을 인가받는 제1전극과; 상기 제1전극과 대향한 상태로 이격 배치되고 금속 도체로 형성되어, 상기 제1전극과의 사잇 공간에 방전 공간을 형성하는 제2전극과; 상기 제1전극과 상기 제2전극에 전압을 공급하는 전압 공급부와; 상기 제1전극과 상기 제2전극의 대향면 중 어느 하나에 형성된 유전체와; 상기 방전 공간 내에 처리 가스를 유입하는 처리가스 공급부와; 상기 제1전극의 내부를 관통하는 제1냉각유로에 냉각액이 유동하는 냉각부를; 포함하여 구성되어, 냉각액이 흐르는 제1냉각유로가 제1전극을 관통하는 형상으로 제1전극이 형성되어, 제1전극과 냉각액과의 접촉면적을 극대화하여 제1전극에서 발생되는 높은 열을 효과적으로 냉각시킴으로써, 제1전극에서 발생되는 열을 보다 넓은 접촉 면적으로 제1냉각유로를 흐르는 냉각액이 흡수하여 외부로 배출시켜, 대기압 하에서 전극에 높은 전압을 인가하여 방전을 유도하는 동안에 발생되는 큰 발열량에 의하여 전극 등이 손상되는 등 반응기의 내구성이 저하되는 것을 효과적으로 방지하는 대기압 플라지마 처리 장치를 제공한다. The present invention relates to an atmospheric-pressure plasma processing apparatus, and more particularly, to an atmospheric-pressure plasma processing apparatus having a first electrode formed of a metal conductor and applied with a positive voltage; A second electrode spaced apart from the first electrode and spaced apart from the first electrode, the second electrode being formed of a metal conductor and forming a discharge space in a space between the first electrode and the first electrode; A voltage supplier for supplying a voltage to the first electrode and the second electrode; A dielectric formed on one of opposing surfaces of the first electrode and the second electrode; A processing gas supply unit for supplying a processing gas into the discharge space; A cooling portion through which a cooling liquid flows in a first cooling flow passage passing through the inside of the first electrode; The first electrode is formed in such a manner that the first cooling channel through which the cooling liquid flows passes through the first electrode so that the contact area between the first electrode and the cooling liquid is maximized to effectively heat the high heat generated in the first electrode The cooling liquid flowing through the first cooling channel absorbs heat generated from the first electrode to the outside and is discharged to the outside so that a large voltage is applied to ...