ЛАЗЕРНЫЙ ЭЛЕМЕНТ ПОВЕРХНОСТНОГО ИСПУСКАНИЯ, СПОСОБ ДЛЯ ИЗГОТОВЛЕНИЯ ЛАЗЕРНОГО ЭЛЕМЕНТА ПОВЕРХНОСТНОГО ИСПУСКАНИЯ И АТОМНЫЙ ОСЦИЛЛЯТОР

Лазерный элемент поверхностного испускания включает в себя полупроводниковую подложку и множество лазеров поверхностного испускания, сконфигурированных с возможностью испускания света со взаимно различными длинами волн. Каждый лазер поверхностного испускания включает в себя нижний брэгговский отражатель, обеспеченный на полупроводниковой подложке, резонатор, обеспеченный на нижнем брэгговском отражателе, верхний брэгговский отражатель, обеспеченный на резонаторе, и слой регулирования длины волны, обеспеченный внутри верхнего брэгговского отражателя или нижнего брэгговского отражателя. Слои регулирования длины волны, включенные в лазеры поверхностного испускания, имеют взаимно различные толщины, причем, по меньшей мере, один из слоев регулирования длины волны включает в себя слои регулирования, образованные из двух видов материалов, и числа слоев регулирования, включенных в слои регулирования длины волны, взаимно различаются. Технический результат заключается в возможности обеспечения регулирования ...

Optische Halbleitervorrichtung.

Vollständig selbstjustierter oberflächenemittierender Halbleiterlaser für die Oberflächenmontage mit optimierten Eigenschaften

Die vorliegende Erfindung bezieht sich auf einen oberflächenemittierenden Halbleiterlaser mit vertikalem Resonator, aufweisend einen Substratbasisabschnitt (1) und eine auf und/oder an dem Substratbasisabschnitt angeordnete Mesa (M), wobei die Mesa im Wesentlichen senkrecht zur Substratbasisebene gesehen, umfasst: zumindest einen Teil eines ersten, dem Substratbasisabschnitt zugewandt angeordneten Dotierbereiches (2), zumindest einen Teil eines zweiten, dem Substratbasisabschnitt abgewandt angeordneten Dotierbereiches (4) und einen zwischen dem ersten und dem zweiten Dotierbereich angeordneten aktiven Bereich (3) mit mindestens einer aktiven Schicht (A) mit laseremittierender Zone, welche imert, dadurch gekennzeichnet, dass die Mesa (M) in indestens eine Einschnürung (E) aufweist.

Vielfachhalbleiterlaseranordnung

Indexgeführter VCSEL und ein Verfahren zur Herstellung

Ein zuverlässiger Hochfrequenz-VCSEL (10) weist einen unteren verteilten Bragg-Reflektor [DBR] (16), einen aktiven Bereich (18) und einen oberen DBR (20) auf. Ein zylindrisches Volumen (24) ist aus dem oberen DBR (20) geätzt, um eine Mesastruktur (25) mit einer unteren Oberfläche des zylindrischen Volumens (24) zu definieren, welche mit einer Seitenwand der Mesastruktur (25) einen Winkel ausbildet, welcher größer als 90° ist. Ein Isolationsgraben (28) ist in die untere Oberfläche des zylindrischen Volumens (24) geätzt, welcher konzentrisch mit der Mesastruktur (25) angeordnet ist und sich durch den aktiven Bereich (18) erstreckt. Ein Abschnitt der Seitenwand der Mesastruktur (25) und der unteren Oberfläche des zylindrischen Volumens (24) sind mit Protonen implantiert. Der obere DBR (20) ist geglättet, indem dielektrische Materialien (32) mit geringem k-Wert verwendet werden und elektrisch n- und p-Kontakte (34, 35) sind mit gegenüberliegenden Seiten des aktiven Bereichs (18) gekoppelt, ...

Semiconductor laser chip

A semiconductor laser chip having a buried heterostructure comprising a semiconductor substrate and a light emitting portion wherein the active layer and buried layers of the light emitting portion are disposed to be on only a portion of the semiconductor substrate. By virtue of this arrangement, the probability of occurrence of VTH effects can be reduced. Also, the occurrence of the junction short-circuits resulting from an overhanging electrode or from deposition of foreign matter can be reduced.

Oxide vertical cavity surface-emitting laser

Vertical cavity surface emitting laser

Vertical cavity surface emitting laser

Device Coupon

A distributed feedback laser (DFB) comprises an active waveguide 104 with a reflective facet 108. Wherein the distributed feedback laser is prepared by etching a grating 106 for example, a Bragg grating into the active waveguide 104 and etching an output facet into the active waveguide 104. An output facet 114 is etched into the active waveguide such that the grating is located between the reflective facet 108 and the output facet 114. The grating may be located above or underneath an active quantum well layer. Wherein an optoelectronic device comprises a distributed feedback laser characterised by an output waveguide being butt coupled to the active waveguide. The optoelectronic device may be micro-transfer printed using a device coupon using said distributed feedback laser by adhering the device coupon 102 to a stamp and depositing the device coupon onto a platform wafer 118.

SURFACE-EMITTING LICHTEMITTIERENDES SEMICONDUCTOR CONSTRUCTION UNIT AND PROCEDURE FOR ITS PRODUCTION, OPTICAL MODULE AND LIGHT TRANSMISSION DEVICE

PROCEDURE FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES WITH MESASTRUKTUR AND SEVERAL PASSIVATION LAYERS

PROCEDURE FOR THE PRODUCTION OF A SURFACE EMISSION LASER, PROCEDURE FOR THE PRODUCTION OF A SURFACE EMISSION LASER ARRAY, OBERFLÄCHENEMIS ION LASERS, SURFACE EMISSION LASER ARRAY AND OPTICAL DEVICE WITH THE SURFACE EMISSION LASER ARRAY

Low threshold microcavity light emitter

ELECTRONIC DEVICES INCLUDING SEMICONDUCTOR MESA STRUCTURES AND CONDUCTIVITY JUNCTIONS AND METHODS OF FORMING SAID DEVICES

An electronic device including a substrate and a semiconductor mesa on the substrate. Said device mesa having a mesa base adjacent to the substrate, a mesa surface opposite the substrate, and mesa sidewalls between the mesa surface and the mesa base. In addition, the semiconductor mesa has a first conductivity type between the mesa base and a junction, the junction being between the mesa base and the mesa surface, and the semiconductor mesa having a second conductivity type between the junction and the mesa surface. Related manufacturing methods are also defined.

ELECTRICALLY PUMPED VERTICAL CAVITY LASER

Disclosed is an electrically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses an interband cascade gain region, two distributed mirrors, and a low-loss refractive index waveguide. A preferred embodiment includes at least one wafer bonded GaAs-based mirror.

A SINGLE-CHIP SERIES CONNECTED VCSEL ARRAY

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

HYBRID SEMICONDUCTOR LASER COMPONENT AND METHOD FOR MANUFACTURING SUCH A COMPONENT

L'invention concerne un composant laser semiconducteur hybride (1) comportant au moins un premier module d'émission (110, 120) comprenant une zone active conformée pour émettre un rayonnement électromagnétique à une longueur d'onde donnée; et une couche optique (200) comprenant au moins un premier guide d'onde (210, 220) couplé optiquement à la zone active (110, 120),le guide d'onde (210, 220) formant avec la zone active (110, 120) une cavité optique résonnante à la longueur d'onde donnée. Le composant laser semiconducteur hybride (1) comporte en outre une couche semiconductrice (310) dite de dissipation thermique, ladite couche semiconductrice de dissipation thermique (310) étant en contact thermique avec le premier module d'émission (110, 120) sur une surface du premier module d'émission (110, 120) qui est opposée à la couche optique (200). L'invention concerne en outre un procédé de fabrication d'un tel composant laser semiconducteur hybride (1) ...

PHOTONIC INTEGRATED CIRCUIT AND METHOD OF MANUFACTURE

MULTI-WAVELENGTH SURFACE PLASMON LASER

Disclosed is a multi-wavelength surface plasmon laser which can emit surface plasmon at a plurality of wavelengths at the same time. The multi-wavelength surface plasmon laser may include an active layer of which the thickness is changed according to the location thereof to generate light with different wavelengths according to the location, and a metal cavity of which the length is changed according to the position thereof. Light with different wavelengths generated from the active layer can generate the surface plasmon with different wavelengths on the interface of a metal layer and a semiconductor layer. The generated surface plasmon with different wavelengths is resonated by the metal cavity of which the length is changed according to the location thereof to be emitted to the outside. COPYRIGHT KIPO 2016 ...

VERTICAL CAVITY SURFACE EMITTING SEMICONDUCTOR LASER AND SURFACE EMITTING SEMICONDUCTOR LASER ARRAY

PURPOSE: To provide a vertical cavity surface emitting semiconductor laser and a surface emitting semiconductor laser array capable of controlling the polarization direction of laser beams. CONSTITUTION: In the surface emission semiconductor laser 100 in which a resonator 120 is formed on a semiconductor substrate 101 in the vertical direction and laser beams are projected in the vertical direction to the semiconductor substrate 101 from the resonator 120, the laser 100 contains a columnar section 110 as a part of the resonator 120 and an insulating layer 112 formed while being brought into contact with the external surface of the columnar section 110, and the insulating layer 112 has anisotropic stress resulting fro the plane shape of the insulating layer and controls the polarization direction of laser beams by the anisotropic stress. © KIPO & JPO 2002 ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING IMPROVED ELECTRICAL OPTICAL CHARACTERISTIC AND FABRICATING METHOD THEREOF

PURPOSE: A semiconductor light-emitting device having an improved electro-optical characteristic is provided to automatically perform an alignment between central axes of the window of an upper electrode and a current aperture, by previously forming the upper electrode and by forming the current aperture through an oxide process after a post is formed by performing an etch process while the upper electrode is used as a mask. CONSTITUTION: The post composed of a plurality of layers including at least one preliminary oxide layer(17) is formed on a substrate. An electrode is formed on the post. The electrode is etched by a self-aligned method to form the post. The preliminary oxide layer is horizontally oxidized by a predetermined dimension from the sidewall of the etched post. © KIPO 2003 ...

Vertical cavity surface emitting laser

This vertical cavity surface emitting laser is provided with: a base substrate (11) that is formed of a semi-insulating semiconductor; an emission region multilayer part which is formed on the surface of the base substrate (11) and comprises an N-type semiconductor contact layer (21), an N-type DBR layer (22), an active layer (40), a P-type semiconductor DBR layer (23) and a P-type semiconductor contact layer (24); an anode electrode (921) that is connected to the P-type semiconductor contact layer (24); and a cathode electrode (911) that is formed on the surface side of the base substrate (11) and is connected to the N-type semiconductor contact layer (21). The N-type DBR layer (22) is obtained by laminating 15 or more pairs of layers having different compositions. Consequently, there is provided a vertical cavity surface emitting laser which is capable of suppressing the occurrence of defects due to crystal missing that is attributed to the base substrate, while suppressing the cost.

Direct modulated laser

Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus

LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR

Provided is a high-output light emitting element capable of emitting a single-mode light beam. The light emitting element is provided with a laminated structure (20) formed by sequentially laminating a first compound semiconductor layer (21), an active layer (23), and a second compound semiconductor layer (22) on a substrate (20'), a second electrode (32), and a first electrode (31). The first compound semiconductor layer (21) has a laminated construction of a first clad layer (121A) and a first light guide layer (121B) from the substrate side, and the laminated structure has a ridge stripe structure (20A) configured from the second compound semiconductor layer (22), the active layer (23), and a part (121B') in the thickness direction of the first light guide layer. 6×10-7m Подробнее

PROTECTIVE SIDE WALL PASSIVATION FOR VCSEL CHIPS

Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AIAs and AIGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.

Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

OPTICAL SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME

An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; and an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconductor laser, absorbs a portion of the laser light, and protects the surface-emitting type semiconductor laser from electrostatic destruction.

Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser

Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer. In addition to a tunnel junction on the p-side of the active zone, the tunnel junction borders a second n-doped semi-conductor layer with the exception of an area forming an aperture. An n-doped layer is provided between the layer provided for the tunnel junction and the at least one p-doped semiconductor layer. The tunnel junction may be arranged in a maximum or minimum of the vertical intensity distribution of the electric field strength. This enables surface-emitting laser diodes to be produced in high yields with stabilization of the lateral single-mode operation, high performance and wave guiding properties.

Integrated light source frequency adjustment, injection locking or modulation of dielectric resonator

An integrated light source for frequency adjustment, injection locking or modulation of an oscillator is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of an active device and a light source on a monocrystalline compound semiconductor material and control circuitry for the light source on a monocrystalline substrate. The use of light to provide the frequency adjustment, injection locking or modulation of the oscillator has multiple advantages including maintenance of good phase-noise.

Surface-emitting type semiconductor laser and method for manufacturing the same

A surface-emitting type semiconductor laser includes: an upper mirror and a lower mirror each composed of alternately formed first semiconductor layers and second semiconductor layers; an active layer disposed between the upper mirror and the lower mirror, wherein the surface-emitting laser emits laser light in a direction in which the first semiconductor layers and the second semiconductor layers are formed; a thick film layer formed with one of the first semiconductor layers composing the lower mirror, the thick film layer being thicker than other of the first semiconductor layers; and a third semiconductor layer provided between the thick film layer and one of the second semiconductor layers on the thick film layer, the third semiconductor layer having a refractive index between a refractive index of the first conductive layer and a refractive index of the second semiconductor layer.

Optically assisted magnetic recording device, optically assisted magnetic recording head and magnetic disk device

The present invention provides a magnetooptic device, a magnetooptic head, and a magnetic disk drive each capable of performing optically assisted magnetic recording and each having a small size, improved recording density, and a higher transfer rate. In a magnetooptic device, a magnetic circuit including a magnetic gap and a thin film magnetic transducer having a coil portion are stacked on the surface of a semiconductor laser. By the arrangement, optically assisted magnetic recording can be performed, small size and light weight are achieved, and higher transfer rate can be implemented.

Vertical cavity surface emitting laser device, vertical cavity surface emitting laser array, optical scanning apparatus, image forming apparatus, optical transmission module and optical transmission system

A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

Method for manufacturing semiconductor optical device

After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2 film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO2 film on the top of the waveguide ridge, and burying the SiO2 film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO2 film of the waveguide ridge; the SiO2 film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.

Surface-emitting laser, method for manufacturing surface-emitting laser, device and electronic apparatus

Surface-emitting lasers are provided that can readily make highly accurate dimensions at the center axis of a resonator. A surface-emitting laser is characterized in that a lens layer in a convex lens shape having an apex portion that is flat is disposed on one end portion of a resonator.

Long wavelength vertical cavity surface emitting laser

Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 mum light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.

Method for producing a laser diode bar and laser diode bar

A diode bar and a method for producing a laser diode bar are disclosed. In an embodiment a laser diode bar includes a plurality of emitters arranged side by side, the each emitter having a semiconductor layer sequence with an active layer suitable for generating laser radiation, a p-contact and an n-contact, wherein the emitters comprise a group of electrically contacted first emitters and a group of non-electrically contacted second emitters, wherein the p-contacts of the first emitters are electrically contacted by a p-connecting layer, and wherein the p-contacts of the second emitters are separated from the p-connecting layer by an electrically insulating layer and are not electrically contacted.

Single-chip series connected VCSEL array

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

Surface emitting laser, atomic oscillator, and manufacturing method of surface emitting laser

A surface emitting laser includes: a substrate; and a laminated body disposed over the substrate, wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, and surface roughness Ra of an uppermost layer of the first mirror layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm.

SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING A SURFACE-EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING A SURFACE-EMITTING LASER ARRAY

Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer.

Index guided VCSEL and method of fabrication

A reliable high frequency VCSEL includes a lower distributed Bragg reflector (DBR), an active region, and an upper DBR. A cylindrical volume is etched from the upper DBR to define a mesa with a lower surface of the cylindrical volume forming an angle greater than ninety degrees with the side wall of the mesa. An isolation trench is etched in the lower surface of the cylindrical volume concentric with the mesa and extending through the active region. A portion of the side wall of the mesa and the lower surface of the cylindrical volume are proton implanted. The upper DBR is planarized using low-k dielectric materials and n and p electrical contacts are coupled to opposite sides of the active region for supplying operating current thereto.

Method of manufacturing surface emitting laser, and surface emitting laser, surface emitting laser array, optical scanning device, and image forming apparatus

A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

Low capacitance optoelectronic device

An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

Optical element and its manufacturing method

To improve the reliability of an optical element and its manufacturing method. An optical element 100 includes a substrate 110 , a columnar section 130 formed above the substrate 110 and having an upper surface 132 for light emission or incidence, a resin layer 140 formed above the substrate 110 and in a region including a circumference of the columnar section 130 , a reinforcing layer 180 that is formed above the resin layer 140 and is composed of a material harder than the resin layer 140 , and an electrode 150 that has a bonding section 156 formed above the reinforcing layer 180 and is electrically connected to an end section of an exposed area in the upper surface 132 of the columnar section 130.

OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

Integrated laser diodes with quality facets on GaN substrates

A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end.

OPTOELECTRONIC COMPONENT

An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

Surface-emitting light emitting device, manufacturing method for the same, optical module, and optical transmission apparatus

Disclosed are a surface-emitting light emitting device includes an optical member whose mounting position, form, and size have been favorably controlled, and a method of manufacturing the same. The light emitting device (100) of the present invention can emit light perpendicular to a substrate (101) and includes an emitting surface (108) that emits the light, a base member (110) that is provided on the emitting surface (108), and an optical member (111) that is provided on an upper surface (110a) of the base member (110).

METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING MESA STRUCTURES AND MULTIPLE PASSIVATION LAYERS AND RELATED DEVICES

A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A first passivation layer can be formed on at least portions of the mesa sidewalls and on the substrate adjacent the mesa sidewalls wherein at least a portion of the mesa surface is free of the first passivation layer and wherein the first passivation layer comprises a first material. A second passivation layer can be formed on the first passivation layer wherein at least a portion of the mesa surface is free of the second passivation layer, and wherein the second passivation layer comprises a second material different than the first material. Related devices are also discussed.

窒化物半導体レーザ素子の製造方法

SURFACE EMITTING LASER ELEMENT, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNER, AND IMAGE FORMATION APPARATUS

PROBLEM TO BE SOLVED: To provide a surface emitting laser element capable of improving a manufacturing yield. SOLUTION: A resonator structure including a buffer layer 102, a lower semiconductor DBR 103 and an active layer 105, an upper semiconductor DBR 107, and a contact layer 109 are laminated on a substrate 101. On an injection surface where a laser beam is ejected, a p-side electrode 113 is provided by surrounding an injection area. In the injection area, a dielectric film is provided whose reflectivity of periphery is made to be lower than that of the center. Vicinity of the end of the dielectric film is tilted against the injection surface. COPYRIGHT: (C)2011,JPO&INPIT ...

Vertikalresonator-Laserdiode (VCSEL)

Optoelektronisches Bauelement

Die Erfindung betrifft ein optoelektronisches Bauelement mit einer Schichtstruktur mit einer aktiven Zone zum Erzeugen einer elektromagnetischen Strahlung, wobei die aktive Zone in einer Ebene angeordnet ist, wobei die Schichtstruktur eine Oberseite und vier Seitenflächen aufweist, wobei eine streifenförmige Ridgestruktur auf der Oberseite der Schichtstruktur angeordnet ist, wobei sich die Ridgestruktur zwischen der ersten Seitenfläche und der dritten Seitenfläche erstreckt, wobei die erste Seitenfläche eine Abstrahlfläche für elektromagnetische Strahlung darstellt, wobei seitlich neben der Ridgestruktur in die Oberseite der Schichtstruktur (2) eine erste Ausnehmung eingebracht ist, wobei eine zweite Ausnehmung in die erste Ausnehmung eingebracht ist, und wobei die zweite Ausnehmung sich bis zu der zweiten Seitenfläche erstreckt.

Surface-emitting semiconductor laser

Vertical cavity surface emitting laser

Resonant cavity laser having oxide spacer region

A resonant-cavity optical device, eg a vertical cavity surface emitting laser, has a substrate upon which are provided a Bragg reflector multilayer bottom mirror, a semiconductor lower spacer region, an active region, and a dielectric region which surrounds the bottom mirror, the active region and the lower spacer region. An upper spacer region and a top mirror are provided on top of the active region. The top mirror has a window in which a metal terminal is provided. The terminal is in direct contact with the upper spacer region which is formed of a transparent electrically conducting oxide, eg indium tin oxide.

Resonant-cavity optical device

Surface-emitting semiconductor laser

PROCEDURE FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES WITH MESASTRUKTUREN AND MULTIPLES PASSIVATION LAYERS AND USED DEVICES

TERAHERTZ QUANTUM CASCADE LASER

THERMAL COMPENSATION FOR BURST-MODE LASER WAVELENGTH DRIFT

An apparatus comprising a burst-mode laser(610) comprising an active layer(720) and configured to emit an optical signal during a burst period, wherein a temperature change of the burst-mode laser(610) causes the optical signal to shift in wavelength, and a heater(620) thermally coupled to the active layer(720) and configured to reduce a wavelength shift of the optical signal during the burst period by applying heat to the active layer(720) based on timing of the burst period.

METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING SELF ALIGNED SEMICONDUCTOR MESAS AND CONTACT LAYERS AND RELATED DEVICES

Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact layer has sidewalls and a contact surface opposite the mesa surface and wherein the contact layer extends across substantially an entirety of the mesa surface. A passivation layer can be formed on the mesa sidewalls and on portions of the contact layer sidewalls adjacent the mesa surface, and the passivation layer can expose substantially an entirety of the contact surface of the contact layer.

Semiconductor Laser Device

RESIN COATING METHOD FOR SEMICONDUCTOR LASER DEVICE CAPABLE OF COATING THINLY AND UNIFORMLY SURFACES OF A SEMICONDUCTOR LASER CHIP AND PHOTODIODE CHIPS WITH A RESIN

There is provided a resin coating method capable of coating thinly and uniformly surfaces of a semiconductor laser chip and photodiode chips and in a semiconductor laser device with a resin. The semiconductor laser device is fixed to a turntable with a laser beam emission window of a cap opened upward. A resin is dropped on the chips inside the cap through the laser beam emission window, and then the turntable is made to spin around a spindle which extends in a direction approximately perpendicular to the turntable to thereby flow a superfluous portion of the dropped resin toward an internal wall of the cap.

Optical element, and its manufacturing method

A PROCESS FOR FORMING A RESONANT STRUCTURE OF A SEMICONDUCTOR LASER WITH NEGATIVE FEEDBACK DISTRIBUTED

III-V group GaN-based semiconductor device and manufacturing method thereof

모서리 방출 반도체 레이저

... 반도체 몸체(10)를 포함한 모서리 방출 반도체 레이저가 제공되며, 상기 반도체 몸체는 도파로 영역(4)을 포함하고, 이 때 상기 도파로 영역(4)은 제1도파로층(2A), 제2도파로층(2B) 및 레이저빔(17)의 생성을 위해 제1도파로층(1A)과 제2도파로층(2B) 사이에 배치된 활성층(3)을 포함하고, 상기 도파로 영역(4)은 제1클래딩층(1A),과 반도체 몸체(10)의 성장 방향에서 도파로 영역(4) 이후에 위치한 제2클래딩층(1B) 사이에 배치되며, 반도체 몸체(10) 내에는 활성층(3)으로부터 방출된 레이저빔의 래터럴 모드를 선택하기 위한 위상 구조물(6)이 형성되고, 이 때 위상 구조물(6)은 적어도 하나의 홈(7)을 포함하고, 홈은 반도체 몸체(10)의 표면으로부터 제2클래딩층(1B)안으로 연장되며, 제2클래딩층(1B)안에는 제2클래딩층(1B)의 반도체 물질과 다른 반도체 물질로 구성된 적어도 하나의 제1중간층(11)이 매립되며, 홈(7)은 반도체 몸체(10)의 표면(5)으로부터 적어도 부분적으로 제1중간층(11)안에까지 연장된다.

Index guided vcsel and method of fabrication

A reliable high frequency VCSEL includes a lower distributed Bragg reflector (DBR), an active region, and an upper DBR. A cylindrical volume is etched from the upper DBR to define a mesa with a lower surface of the cylindrical volume forming an angle greater than ninety degrees with the side wall of the mesa. An isolation trench is etched in the lower surface of the cylindrical volume concentric with the mesa and extending through the active region. A portion of the side wall of the mesa and the lower surface of the cylindrical volume are proton implanted. The upper DBR is planarized using low-k dielectric materials and n and p electrical contacts are coupled to opposite sides of the active region for supplying operating current thereto.

Laser element

A laser element includes a transparent substrate, an adhesive layer, and a laser unit. The transparent substrate comprises a conductive layer. The adhesive layer is attached to the transparent substrate. The laser unit includes a front conductive structure, and a back conductive structure. The front conductive structure is attached to the adhesive layer. The back conductive structure is opposite to the front conductive structure, and the back conductive structure includes a plurality of detecting electrodes separated from each other. The detecting electrodes extends from the back conductive structure and penetrates through the front conductive structure and the adhesive layer; wherein the detecting electrodes is connected to the plurality of detecting electrodes and the conductive layer.

Discharge method, lens, manufacturing method thereof, semiconductor laser, manufacturing method thereof, optical device, and discharge device

To efficiently form microlenses respectively on a plurality of semiconductor lasers being in a wafer state. A discharge method includes; a step (A) of positioning a substrate having two discharging object parts so that a distance in the X-axis direction between two adjacent discharging object parts and a distance in the X-axis direction between two out of a plurality of nozzles arranged in the X-axis direction are equal to each other; a step (B) of moving the plurality of nozzles relatively to the substrate along a Y-axis direction orthogonal to the X-axis direction; and a step (C) of discharging liquid materials to the two discharging object parts from the two nozzles respectively when the two nozzles intrude into areas corresponding to the two discharging object parts in the step (B).

EDGE EMITTING SEMICONDUCTOR LASER

The invention relates to an edge emitting semiconductor laser, comprising a semiconductor body (10), which has a waveguide region (4), wherein the waveguide region (4) comprises a first waveguide layer (2A), a second waveguide layer (2B) and an active layer (3) arranged between the first waveguide layer (2A) and the second waveguide layer (2B) for generating laser radiation (17). The waveguide region (4) is arranged between a first shell layer (1A) and a second shell layer (1B) following the waveguide region (4) in the growth direction of the semiconductor body (10). A phase structure (6) for selecting lateral modes of the laser radiation emitted by the active layer (3) is arranged in the semiconductor body (10), wherein the phase structure (6) comprises at least one recess (7), which extends from a surface (5) of the semiconductor body (10) into the second shell layer (1B). At least one first intermediate layer (11), which is made of a semiconductor material that is different from the ...

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE

A semiconductor light emitting element (100) comprises a nitride semiconductor layer (103) formed on a substrate (101), an insulation film (105), and a first electrode (171) and a second electrode (172). The nitride semiconductor layer (103) includes a second cladding layer (135) having a stripe-like ridge portion (103A). The insulation film (105) is formed so as to straddle over a side surface of the ridge portion (103A), and over a portion connecting with the ridge portion (103A) in the second cladding layer (135), and to expose a portion of a region that excludes the ridge portion in the second cladding layer. The first electrode (171) is formed in contact with an upper surface of the ridge portion (103A). The second electrode (173) is formed so as to contact with the upper surface of the first electrode (171), the upper surface of the insulation film (105) and the portion exposed from the insulation film (105) of the second cladding layer (135).

LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT AND SEMICONDUCTOR ELEMENT

Provided is a light emitting element and method for manufacturing a light emitting element and semiconductor element such that cracking of a compound semiconductor layer by internal reactions in the compound semiconductor layer does not occur during chemical liftoff. The manufacturing method for a light emitting element comprises: an element region forming step for forming an element region formed from a semiconductor layer on part of a growth substrate via a liftoff layer; a sacrificial part forming step for forming a sacrificial part constituted by material not eliminated in the chemical liftoff step around the element region on the growth substrate; a coating step for forming a coating layer that coats the growth substrate and semiconductor layer such that surface height in regions separate from the element region is lower than a light emitting layer surface; a window forming step that removes the coating layer on the semiconductor layer and the coating layer on the sacrificial part ...

METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING MESA STRUCTURES AND MULTIPLE PASSIVATION LAYERS AND RELATED DEVICES

A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A first passivation layer can be formed on at least portions of the mesa sidewalls and on the substrate adjacent the mesa sidewalls wherein at least a portion of the mesa surface is free of the first passivation layer and wherein the first passivation layer comprises a first material. A second passivation layer can be formed on the first passivation layer wherein at least a portion of the mesa surface is free of the second passivation layer, and wherein the second passivation layer comprises a second material different than the first material. Related devices are also discussed.

A MONITORED OPTICAL COMPONENT AND METHOD OF MAKING

Materials suitable for fabricating optical monitors include amorphous, polycrystalline and microcrystalline materials. Semitransparent photodetector materials may be based on silicon or silicon and germanium alloys. Conductors for connecting to and contacting the photodetector may be made from various transparent oxides, including zinc oxide, tin oxide and indium tin oxide. Optical monitor structures based on PIN diodes take advantage of the materials disclosed. Various contact, lineout, substrate and interconnect structures optimize the monitors for integration with various light sources, including vertical cavity surface emitting laser (VCSEL) arrays. Complete integrated structures include a light source, optical monitor and either a package or waveguide into which light is directed.

LASER DIODE COMPRISING A VERTICAL RESONATOR AND A METHOD FOR THE PRODUCTION THEREOF

The invention relates to a laser diode comprising a vertical resonator and to a method for the production thereof, whereby at least one active layer (2) is arranged between reflective layers. The invention is characterised in that at least one anti-oxidation layer (1) consisting of a III-V semiconductor material with a proportion of molar aluminium of less than 0.7 and/or at least one anti-oxidation layer (1) consisting of a III-V semiconductor material with an optical depth of at least two quarter waves is arranged between the reflective layers (3), thus preventing distortion caused by unintentional oxidation.

Semiconductor laser and semiconductor laser module

The present invention provides a semiconductor laser capable of performing high-speed modulation and having a low-capacity structure. The semiconductor laser comprises a semiconductor substrate, a multilayered growth layer which is formed on the main surface side of the semiconductor substrate in multilayer form and which is electrically isolated from the semiconductor substrate and includes, in a middle layer, an active layer interposed between a semiconductor layer of first conductivity type corresponding to a lower layer and a semiconductor layer of second conductivity type corresponding to an upper layer, a ridge formed between two trenches, which is provided on the surface of the multilayered crystal layer without reaching the active layer, a first isolation trench which is provided outside the trench located on one or other side of the ridge along the ridge and reaches a semiconductor layer below the active layer, and a second isolation trench which reaches a surface layer of the ...

Method for attaching optical components onto silicon-based integrated circuits

Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A specific sacrificial or removable separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate. It is possible to place and interconnect VCSELs directly within the physical structure of the integrated circuit, thus greatly ...

VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) TUNED THROUGH APPLICATION OF MECHANICAL STRESS VIA A PIEZOELECTRIC MATERIAL

A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material. The electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to experience the mechanical stress, which causes the emission wavelength of the VCSEL to ...

Light emitting devices with layered III -V semiconductor structures, and modules and systems for computer, network and optical communication, using such devices

A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

SEMICONDUCTOR COMPONENT WITH A STRESS COMPENSATION LAYER AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT

A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.

ATOMIC OSCILLATOR

An atomic oscillator includes: a gas cell sealing alkali metal atoms; a light source emitting light to the gas cell; and a light detection unit detecting a light amount of light transmitted through the gas cell, in which the light source includes a substrate, a first mirror layer disposed on an upper portion of the substrate, an active layer disposed on an upper portion of the first mirror layer, a second mirror layer disposed on an upper portion of the active layer, a first contact layer disposed on an upper portion of the second mirror layer, a light absorption layer disposed on an upper portion of the first contact layer, and a second contact layer disposed on an upper portion of the light absorption layer.

Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof

An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO₂ film is formed on the entire surface. After a window is formed in a portion of the SiO₂ film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO₂ film other than the device perimeter.

Semiconductor laser

In one embodiment, a semiconductor laser includes a semiconductor laminated body formed in a ring shape and first and second electrodes. The semiconductor laminated body includes an active layer, first and second cladding layers formed on both sides of the active layer, first and second contact layers formed on the first and second cladding layers, and first and second modified layers. The first and second modified layers are formed by selectively modifying the inner peripheral sidewalls and the outer peripheral sidewalls of the first and second cladding layers so as to have a refractive index lower than the refractive indexes of the first and second cladding layers. The first and second contact layers are electrically connected to the first and second electrodes.

Optical semiconductor device

An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.

SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE, AND WELDING LASER LIGHT SOURCE SYSTEM

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.

Semiconductor laser, manufacturing the same and semiconductor laser device

A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.

Creating arbitrary patterns on a 2-D uniform grid VCSEL array

An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation. 1. An optoelectronic device , comprising:a semiconductor substrate; and first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack;', 'second epitaxial layers formed over the lower DBR stack, defining a quantum well structure;', 'third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and', 'electrodes formed over the upper DBR stack, which are configured to inject an excitation current into the quantum well structure of at least some of the optoelectronic cells,, 'a regular array of optoelectronic cells, which are formed on the semiconductor substrate and comprisewherein the array comprises a first set of the optoelectronic cells that are configured to emit laser radiation in response to the excitation current and a second set of the optoelectronic cells, interleaved with the first set, in which at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the ...

Nitride-based semiconductor light-emitting device and method of fabricating the same

A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers

Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact layer has sidewalls and a contact surface opposite the mesa surface and wherein the contact layer extends across substantially an entirety of the mesa surface. A passivation layer can be formed on the mesa sidewalls and on portions of the contact layer sidewalls adjacent the mesa surface, and the passivation layer can expose substantially an entirety of the contact surface of the contact layer.

Light guiding for vertical external cavity surface emitting laser

The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighboring region (25) that at least partly surrounds said mesa (24) has a second refractive index (n2)—At least part of said mesa (24) has a first refractive index (n1) and a part of the neighboring region (25) transversally adjacent to said part of the mesa (24) has second refractive index (n 2)—Said first refractive index (n1) is higher than said second refractive index (n2) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method ...

Laser devices

A separate confinement heterostructure (SCH) laser device (LD) has a quantum well active region 10 within an optical guiding region 12, and n- and p-type cladding regions 14 and 16 on opposite sides of the guiding region 12. An electron-capture layer 36 is provided in the n-side guiding region 12a. The composition of the electron-capture layer 36 is such that the minimum energy for X-electrons in the conduction band is lower than that in the surrounding parts of the active region 10 and/or the n-side guiding region 12a. The electron-capture layer 36 is thick enough to bind X-electrons so that, in use, the electron-capture layer 36 promotes the capture of X-electrons. The electron-capture layer 36 is sufficiently close to the active region 10 to permit transfer of captured X-electrons to at least one r-confined level in the active region 10. ...

SURFACE LIGHT-EMITTING TYPE SEMICONDUCTOR LASER

PURPOSE: To have an optimum structure in an optoelectronic integrated circuit after completing a crystal growth at a time and obtain a high reflection factor by low contact resistance, by forming a lower reflecting mirror consisting of a semiconductor multilayer film on an n-type semiconductor substrate and forming an upper reflecting mirror by specific materials, thereby making a double heterostructure part columnar. CONSTITUTION: A multilayer reflecting film 4 is constructed by making semiconductor thin films 4A and 4B grow alternately to form a plurality of grouped multilayers. An upper reflecting mirror 8 acting as a p-side ohmic electrode concurrently is formed by depositing Ti, Pt and Au one after another. Positive holes injected from an upper electrode 10 or 8 are introduced into an active layer 6 through a clad layer 7 and electrons injected from a lower electrode 1 are introduced into the active layer 6 through an n-type semiconductor substrate 2, a buffer layer 3, the multilayer ...

OPTICAL SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an optical semiconductor device having a constitution in which the device functions as an optical-signal transmitter-receiver used for one-core bidirectional communication system, and having a high reliability and can be manufactured economically. SOLUTION: The optical semiconductor device 300 has a face-emission semiconductor laser element 320 and a photodiode 324 integrated and formed around the laser element through an element isolation region 322 on an n-GaAs substrate 301. The laser element is composed of an n-DBR mirror 302, an active region 303, and a p-DBR mirror 304 formed on the substrate; and has a post-shaped columnar laminated structure 305 in which a side wall is covered with an insulating film 306. The photodiode is formed on the substrate, and has the annular laminated structure of an i-GaAs layer 307 and a p-GaAs ayer 308 surrounding the laser element through the region 322. The diameter of the photodiode is made smaller than that of the ...

HALBLEITERLASER

In einer Ausführungsform umfasst der Halbleiterlaser (1) eine Halbleiterschichtenfolge (2) sowie elektrische Kontaktflächen (41, 42). Die Halbleiterschichtenfolge (2) beinhaltet einen Wellenleiter (20) mit einer aktiven Zone (25). Ferner beinhaltet die Halbleiterschichtenfolge (2) eine erste und eine zweite Mantelschicht (21, 22), zwischen denen sich der Wellenleiter (20) befindet. An der Halbleiterschichtenfolge (2) ist zumindest eine schräge Facette (31, 32) gebildet, die mit einer Toleranz von höchstens 10° einen Winkel von 45° zu einer Resonatorachse (R) aufweist. Diese Facette (31, 32) bildet eine Reflexionsfläche (30) hin zur ersten Mantelschicht (21) für im Betrieb erzeugte Laserstrahlung (L). Eine Maximaldicke (D) der ersten Mantelschicht (21) liegt zumindest in einem Strahlungsdurchtrittsbereich (50) zwischen einschließlich 0,5 M/n und 10 M/n, wobei n der mittlere Brechungsindex der ersten Mantelschicht (21) und M die Vakuumwellenlänge maximaler Intensität der Laserstrahlung (L ...

Gan laser element

In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Method for producing semiconductor optical integrated device

A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.

Semiconductor Laser Device and a Method for Manufacturing a Semiconductor Laser Device

A semiconductor laser device formed on a semiconductor substrate, the device comprising: a passivation layer arranged on an upper surface of the device structure for resisting moisture ingress, wherein the passivation layer comprises an inner layer deposited on the upper surface of the device by atomic layer deposition and an outer layer deposited on the inner layer, and comprising a material that is inert in the presence of water.

Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits

Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.

Three-terminal vertical cavity surface emitting laser (vcsel) and a method for operating a three-terminal vcsel

A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when its in the logical HIGH state.

Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus

A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector.

Semiconductor light emitting device and light emitting apparatus

A semiconductor light emitting device includes a nitride semiconductor layer, an insulating film, a first electrode, and a second electrode which are provided on a substrate. The nitride semiconductor layer includes a second cladding layer having a stripe-shaped ridge. The insulating film is provided on a portion of the second cladding layer including the at least one ridge. The first electrode is provided to contact the upper surface of the ridge. The second electrode is provided to contact the upper surface of the first electrode, the upper surface of the insulating film, and a portion of the second cladding layer exposed from the insulating film.

Laser Light Source

A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation At least one of the functional layers is designed as a ridge of the ridge waveguide structure The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.

Semiconductor laser

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN MATERIAL

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch. 132.-. (canceled)33. A method for manufacturing a laser diode device , the method comprising:providing a gallium and nitrogen containing substrate having a surface region;forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing region overlying the release material, an active region comprising at least one quantum well layer overlying the n-type gallium and nitrogen containing region, a p-type gallium and nitrogen containing region overlying the active region; and an interface region overlying the p-type gallium and nitrogen containing region;forming a plurality of dies by patterning the epitaxial material, each pair of adjacent dies being characterized by a first pitch between the pair of dies, each of the dies corresponding to at least one laser diode device;bonding the interface region associated with a portion of the plurality of dies to a carrier substrate to form bonded dies;subjecting the release material of the bonded dies to an energy source to release the bonded dies from the gallium and nitrogen containing substrate and transfer ...

Semiconductor Device and Method

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

ARRAY OF LIGHT SOURCES COMPRISING MULTIPLE VCSELs

The invention describes an array of light sources comprising multiple VCSELs arranged laterally to each other on top of a substrate, wherein each VCSEL comprises a light emitting area surrounded by an electrode structure which does not emit light, wherein a shielding layer is applied on top of at least the electrode structure only covering a surface (of the electrode structure facing towards an average light emitting direction of the VECSELs, the shielding layer is an opaque layer and being adapted to optically match the array in a switched-off state to an outer surface of a housing of a device, where the array of light sources is to be installed. The invention further describes the device comprising such an array and a method for manufacturing an array of light sources. 1. An array of light sources comprising; wherein each of the multiple VCSELs comprises a light emitting area surrounded by an electrode structure which does not emit light,', 'wherein a shielding layer is applied on top of at least the electrode structure only covering a surface of the electrode structure facing towards an average light emitting direction of the multiple VCSELs, and, 'multiple vertical cavity surface emitting laser (VCSELs) arranged laterally to each other on top of a substrate,'}the shielding layer an opaque layer and being adapted to optically match the array in a switched-off state, where no light is emitted, to a demanded appearance, preferably to an outer surface of a housing of a device where the array of light sources is to be installed.2. The array of light sources in accordance with claim 1 , wherein all visible surfaces of the electrode structure are coated by the shielding layer.3. The array of light sources in accordance with claim 1 , wherein the array of light sources comprise non-active areas between neighbored VCSELs of the multiple VCSELs claim 1 , where the shielding layer also covers the non-active areas.4. The array of light sources in accordance with claim 3 , ...

LASER COMPONENT

A laser component includes a housing, a laser chip arranged in the housing, and a conversion element for radiation conversion arranged in the housing wherein the conversion element is irradiatable with laser radiation of the laser chip. A method of producing such a laser component includes providing component parts of the laser component including a laser chip, a conversion element for radiation conversion and housing parts, and assembling the component parts of the laser component such that a housing is provided within which the laser chip and the conversion element are arranged, wherein the conversion element is irradiatable with laser radiation of the laser chip. 1. A laser component comprising:a housing;a laser chip arranged in the housing; anda conversion element for radiation conversion arranged in the housing, wherein the conversion element is irradiatable with laser radiation of the laser chip.2. The laser component according to claim 1 , wherein the conversion element comprises a phosphor layer.3. The laser component according to claim 2 , wherein the phosphor layer comprises a thermally conductive material with one phosphor or a plurality of phosphors embedded therein.4. The laser component according to claim 2 , wherein the conversion element comprises a thermally conductive layer that dissipates heat from the phosphor layer.5. The laser component according to claim 4 , wherein the thermally conductive layer is formed from one selected from the group consisting of metal claim 4 , ceramic claim 4 , diamond claim 4 , sapphire claim 4 , and matrix material with embedded carbon nanotubes.6. The laser component according to claim 4 , wherein the phosphor layer is partly concealed by the thermally conductive layer claim 4 , and the phosphor layer is irradiatable with laser radiation of the laser chip in a region in which the phosphor layer is not concealed by the thermally conductive layer.7. The laser component according to claim 4 , wherein the thermally ...

Semiconductor light emitting element

A semiconductor light emitting element includes an electrode 8 , an active layer 3 , a photonic crystal layer 4 , and an electrode 9 . Conductivity types between the active layer 3 and the electrode 8 and between the active layer 3 and the electrode 9 differ from each other. The electrode 8 , the active layer 3 , the photonic crystal layer 4 , and the electrode 9 are stacked along the X-axis. The X-axis passes through a central part 8 a 2 of the opening 8 a when viewed from the axis line direction of the X-axis. The end 9 e 1 of the electrode 9 and the end 8 e 1 of the opening 8 a substantially coincide with each other when viewed from the axis line direction of the X-axis.

TOOLING FOR COUPLING MULTIPLE ELECTRONIC CHIPS

A method for use with multiple chips, each respectively having a bonding surface including electrical contacts and a surface on a side opposite the bonding surface involves bringing a hardenable material located on a body into contact with the multiple chips, hardening the hardenable material so as to constrain at least a portion of each of the multiple chips, moving the multiple chips from a first location to a second location, applying a force to the body such that the hardened, hardenable material will uniformly transfer a vertical force, applied to the body, to the chips so as to bring, under pressure, a bonding surface of each individual chip into contact with a bonding surface of an element to which the individual chips will be bonded, at the second location, without causing damage to the individual chips, element, or bonding surface. 1. A method comprising:constraining a portion of multiple chips adjacent a hardened material such that the hardened material and the multiple chips behave as a rigid body;transferring a force from the hardened material on the rigid body to the multiple chips to bring, under pressure, a bonding surface of each individual chip into contact with a bonding surface of an element, without causing damage to the multiple chips or the bonding surface of the element; andremoving the hardened material from contact with the multiple chips.2. The method of claim 1 , further comprising moving the multiple chips constrained by the hardened material from a first location to a second location.3. The method of claim 1 , further comprising bonding each of the multiple chips to the element.4. The method of claim 1 , further comprising removing the rigid body using at least one of a chemical process claim 1 , a mechanical process claim 1 , or a chemical-mechanical process.5. The method of claim 1 , further comprising removing at least a portion of the hardened material through at least one of a chemical process claim 1 , a mechanical process claim 1 ...

MONOLITHIC DIODE LASER ARRANGEMENT AND METHOD FOR PRODUCING THE MONOLITHIC DIODE LASER

A monolithic diode laser arrangement contains a plurality of individual emitters which are arranged adjacent to one another on a common supporting substrate and which in each case have contact windows for electrical contact which are arranged on the respective individual emitters on a front face opposite the supporting substrate. A method for producing such a diode laser arrangement and a laser device having such a diode laser arrangement are further described. 1. A monolithic diode laser configuration , comprising:a common carrier substrate; and an epitaxial substrate; and', 'a multilayered epitaxial structure applied on said epitaxial substrate such that said epitaxial substrate is not completely covered by said multilayered epitaxial structure, said multilayered epitaxial structure having at least one p-doped cladding layer and at least one n-doped cladding layer, wherein said multilayered epitaxial structure having a p-type contact window for electrically contacting said p-doped cladding layer and disposed on a front side of said multilayered epitaxial structure and wherein said epitaxial substrate having an n-type contact window for electrically contacting said n-doped cladding layer and disposed on a front side on said epitaxial substrate in a region in which said epitaxial substrate is not covered by said multilayered epitaxial structure., 'a plurality of individual emitters disposed alongside one another on said common carrier substrate and each having contact windows for electrical contacting, said contact windows disposed at a front side of said individual emitters opposite said common carrier substrate, each of said individual emitters containing2. The monolithic diode laser configuration according to claim 1 , further comprising a bond plane claim 1 , said individual emitters are connected to said common carrier substrate indirectly via said bond plane disposed between said individual emitters and said common carrier substrate.3. The monolithic diode ...

METHOD OF PRODUCING A PLURALITY OF LASER DIODES AND LASER DIODE

A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a compound, wherein the laser bars each include a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, and structuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed. 1. A method of producing a plurality of laser diodes comprising:providing a plurality of laser bars in a compound, wherein the laser bars each comprise a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, andstructuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed.2. The method according to claim 1 , wherein the laser diode elements are each formed on a first main surface with a contact region and a connection layer claim 1 , and the contact region is applied on a side of the connection layer remote from the semiconductor layer sequence claim 1 , and at least the contact regions or connection layers of two laser diode elements directly adjacent at a longitudinal separation line are ...

Laser Chip Design

A laser chip comprises a first lateral portion comprising a first metal stripe, a first lateral connector coupled to the first metal stripe, a second metal stripe, and a second lateral connector coupled to the second metal stripe; a second lateral portion coupled to the first lateral portion and comprising a first bonding pad coupled to the first lateral connector, and a second bonding pad coupled to the second lateral connector. A method of DFB laser chip fabrication, the method comprises depositing a first portion of a passivation layer; depositing a second metal stripe; depositing a second portion of the passivation layer; and depositing a first metal stripe. 1. A laser chip , comprising:a substrate including a top surface; a first lateral connector coupled to the first conductive trace at a first end and extending substantially laterally on the top surface from the first conductive trace; and', 'a first bonding pad formed on the top surface and on a second end of the first lateral connector, the first bonding pad located a first distance from the first conductive trace; and, 'a first conductive trace extending substantially longitudinally on the top surface of the substrate, the first conductive trace comprising a second lateral connector coupled to the second conductive trace at a first end and extending substantially laterally from the second conductive trace, the second lateral connector having a second end extending to the top surface of the substrate; and', 'a second bonding pad formed on a second end of the second lateral connector on the top surface of the substrate, the second bonding pad located the first distance from the first conductive trace;, 'a second conductive trace extending substantially longitudinally within the substrate, the second conductive trace being substantially parallel to the first conductive trace, and at least a portion of the second conductive trace is beneath the top surface, the second conductive trace comprisingthe first ...

METHOD OF PRODUCING AN ELECTRONIC COMPONENT

A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region. 117.-. (canceled)18. A method of producing an electronic component comprising:providing a surface comprising a first region and a second region adjoining the first region;arranging a sacrificial layer above the first region of the surface;arranging a passivation layer above the sacrificial layer and the second region of the surface;creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region; andremoving the sacrificial layer and the portions of the passivation layer that are arranged above the first region.19. The method according to claim 18 , wherein creating the opening in the passivation layer comprises:arranging a photoresist layer above the passivation layer;creating an opening in the photoresist layer above the first region of the surface;removing a part of the passivation layer that is arranged below the opening in the photoresist layer; andremoving the photoresist.20. The method according to claim 18 , wherein claim 18 , before arranging the sacrificial layer claim 18 , an electrically conductive layer is arranged above the first region of the surface or above the first region and the second region of the surface.21. The method according to claim 18 , wherein claim 18 , before arranging the ...

Method of manufacturing light emitting device

A method of manufacturing a light emitting device comprising: providing an element-structure wafer having a first substrate and a laser element structure on the first substrate, the laser element structure having ridges on a side opposite to the first substrate and raising layers respectively formed above the ridges; bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer; removing at least a portion of the first substrate to obtain a thinned bonded wafer; singulating the thinned bonded wafer to obtain a laser element with the second substrate; mounting the laser element with the second substrate on a heat dissipating member such that a laser element side of the laser element with the second substrate faces the heat dissipating member; and removing the second substrate from the laser element.

METHOD, SYSTEM AND APPARATUS FOR DIFFERENTIAL CURRENT INJECTION

A laser diode, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet, and a first contact layer electrically coupled to the waveguide and configured to vary an amount of current injected into the waveguide in the longitudinal direction so as to inject more current near the HR facet than at the PR facet. 1. A laser diode , comprising:a transverse waveguide including an active layer between an n-type semiconductor layer on an n-side of the transverse waveguide and a p-type semiconductor layer on a p-side of the transverse waveguide wherein the transverse waveguide is bounded on the n-side by a lower index n-cladding layer and on the p-side by a lower index p-cladding layer;a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet; anda first contact layer configured to vary an amount of current injected into the cavity in the longitudinal direction so as to inject more current at the first end than at the second end.2. The laser diode of claim 1 , wherein the first contact layer is disposed on an n-side of the transverse waveguide.3. The laser diode of claim 1 , wherein the first contact layer is disposed on p-side of the transverse waveguide.4. The laser diode of claim 1 , wherein the first contact layer comprises a substantially uniform thickness.5. The laser diode of claim 1 , wherein the first contact layer comprises a material ...

Semiconductor laser

A semiconductor laser includes a semiconductor layer including end faces and at least one of the end faces is configured as a light emission end face. The semiconductor layer includes a waveguide and a light window structure region. The waveguide has a first width and is extended between the end faces. The light window structure region includes an opening having a second width greater than the first width arranged along the waveguide and is formed continuously or intermittently from one to another of the end faces.

Broadband Electro-Absorption Optical Modulator Using On-Chip RF Input Signal Termination

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Semiconductor laser element, methods of manufacturing the same and semiconductor laser device

A method of manufacturing a plurality of semiconductor laser elements having; preparing the semiconductor wafer; forming grooves that extend along second lines on a first main surface side of the semiconductor wafer, and forming a first texture pattern along second lines on a bottom surface of the grooves, the second lines being parallel to a cavity length direction; forming a second texture pattern along the second lines by covering at least part of the first texture pattern with a protective film; and splitting the semiconductor wafer along first lines, the first lines being parallel to a cavity width direction, and splitting along the second lines using a second main surface, which is an opposite side of the first main surface, of the semiconductor wafer as an origin.

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting device comprising:a light-emitting structure, at least an upper portion of the light-emitting structure has a columnar configuration;a surrounding structure surrounding the light-emitting structure;at least two connecting structures, each of the connecting structures being connected to the light-emitting structure and the surrounding structure, at least two gaps are disposed between the light-emitting structure and the surrounding structure, and each of the gaps are extending along a side surface of the columnar configuration of the light emitting structure;an upper electrode; anda compound-semiconductor surface consisting of compound semiconductor material; a light-emitting-structure active region having an active-region compositional layer configuration;', 'a light-emitting-structure first region disposed above a substrate of the light-emitting device and below the light-emitting-structure active region, the light-emitting structure first region having a first-region compositional layer configuration;', a first portion of the light-emitting-structure second region having a second ...

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting element comprising:a light-emitting structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the light-emitting structure, an upper surface of the light-emitting structure being a first portion of a semiconductor surface consisting of a compound semiconductor material, and at least an upper portion of the light-emitting structure has a columnar configuration;a surrounding structure disposed so as to surround the light-emitting structure,wherein the surrounding structure includes the same layer structure as a portion of the light-emitting structure in which the insulation region is provided, and an upper surface of the surrounding structure being a second portion of the semiconductor surface;a plurality of connecting ...

Techniques for vertical cavity surface emitting laser oxidation

Some embodiments relate to a method for manufacturing a vertical cavity surface emitting laser. The method includes forming an optically active layer over a first reflective layer and forming a second reflective layer over the optically active layer. Forming a masking layer over the second reflective layer, where the masking layer leaves a sacrificial portion of the second reflective layer exposed. A first etch is performed to remove the sacrificial portion of the second reflective layer, defining a second reflector. Forming a first spacer covering outer sidewalls of the second reflector and masking layer. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer while leaving a central region of the optically active layer un-oxidized. A second etch is performed to remove a portion of the oxidized peripheral region, defining an optically active region. Forming a second spacer covering outer sidewalls of the first spacer, the optically active region, and the first reflector.

SEMICONDUCTOR LASERS AND PROCESSES FOR THE PLANARIZATION OF SEMICONDUCTOR LASERS

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide. 1. A laser structure , comprising:a substrate;an active region arranged on the substrate;a waveguide arranged on the active region, the waveguide including a first surface and a second surface that join to form a first angle relative to the active region; anda material deposited on the first surface and the second surface of the waveguide.2. The laser structure of claim 1 , wherein the first angle is less than ninety degrees.3. The laser structure of claim 1 , wherein the waveguide further includes a third surface and a fourth surface that join to form a second angle relative to the active region claim 1 , and the material is deposited on the third surface and the fourth surface.4. The laser structure of claim 3 , wherein the second angle is less than ninety degrees.5. The laser structure of claim 1 , wherein the material is one of MgO claim 1 , MgF claim 1 , SiO claim 1 , or SiN.6. The laser structure of claim 1 , wherein the material has a dielectric constant below 10 in a frequency range up to 50 GHz.7. The laser structure of claim 1 , wherein the material is non-conducting.8. The laser structure of claim 1 , wherein the waveguide includes a fifth surface arranged between the first surface and the third surface claim 1 , and the laser structure further comprises:a first contact arranged on the fifth surface; anda second contact arranged on the substrate,wherein the first contact is configured to bias the laser structure by delivering electrical current to the laser structure.9. The laser structure of claim 1 , further comprising at least one facet.10. The laser structure of claim 9 , wherein the at least one facet is ...

Semiconductor laser element

A semiconductor laser element includes: a light emitting layer of a nitride semiconductor that is placed above a substrate of GaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer of AlGaN; a second nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN; and a fourth nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer.

Vertical-cavity surface-emitting laser for near-field illumination of an eye

A vertical-cavity surface-emitting laser (VCSEL) includes a semiconductor substrate, a first reflector, a second reflector, a first electrical contact, a second electrical contact, and a through-hole via. The first reflector is disposed on a first side of the semiconductor substrate and the second reflector is disposed between the first reflector and an emission side of the VCSEL. The first and second electrical contacts are disposed on a second side of the semiconductor substrate, opposite the first side, for mounting the VCSEL to a transparent substrate. The through-hole via electrically connects the second electrical contact to the second reflector.

SEMICONDUCTOR LASER DIODE

A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the semiconductor body includes a connection region that directly adjoins the first connection element at the contact area, and the connection region is a highly p-doped layer.

OPTOELECTRONIC LIGHTING DEVICE, CARRIER FOR AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC LIGHTING SYSTEM

An optoelectronic lighting device includes an optoelectronic semiconductor chip including a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, the semiconductor layer sequence includes an active zone that generates electromagnetic radiation, and a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside. 130.-. (canceled)31. An optoelectronic lighting device , comprising:an optoelectronic semiconductor chip comprising a top side and an underside opposite the top side,wherein a semiconductor layer sequence is formed between the top side and the underside,the semiconductor layer sequence comprises an active zone that generates electromagnetic radiation, anda barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside.32. The optoelectronic lighting device according to claim 31 , wherein the barrier comprises one or a plurality of walls such that at least one at least partly laterally closed trough that receives the flowing bonding material is formed by the one or the plurality of walls and the one of the top side and the underside.33. The optoelectronic lighting device according to claim 32 , wherein two troughs are formed claim 32 , in each case claim 32 , an electrical contact for electrically contacting the semiconductor chip is arranged within the two troughs claim 32 , and the two troughs are separated from one another by one or a plurality of closed walls to prevent formation of a shunt through the flowing bonding material between the two electrical contacts.34. The optoelectronic lighting device according to claim 31 , wherein the barrier is formed at least partly by the semiconductor layer sequence.35. The optoelectronic lighting device according to claim 31 , wherein the ...

RECONFIGURABLE EMITTER ARRAY

An emitter array may comprise a plurality of vertical-emitting devices. The plurality of vertical-emitting devices may be in a two-dimensional pattern of vertical-emitting devices. The emitter array may further comprise a plurality of electrical contacts on a surface of the emitter array. Each of the plurality of electrical contacts may be co-located with and electrically connected to a corresponding vertical-emitting device of the plurality of vertical-emitting devices. The plurality of electrical contacts may provide mechanical support over the plurality of vertical-emitting devices. The plurality of electrical contacts may extend to approximately a same height. A subset of the plurality of vertical-emitting devices may be powered via a corresponding subset of the plurality of electrical contacts. 1. A vertical cavity surface emitting laser (VCSEL) array , comprising: 'wherein the plurality of VCSELs are in a two-dimensional pattern of VCSELs;', 'a plurality of VCSELs,'} wherein an electrical contact, of the plurality of electrical contacts, is co-located with a corresponding VCSEL of the plurality of VCSELs,', 'wherein the plurality of electrical contacts provides mechanical support to an adjacent element over the plurality of VCSELs,', 'wherein the plurality of electrical contacts extends to approximately a same height,', 'wherein the plurality of electrical contacts has a height that is greater than other elements of the VCSEL array on a same surface as the plurality of electrical contacts; and, 'a plurality of electrical contacts on a surface of the VCSEL array,'} wherein one of the plurality of metal interconnects electrically connects one of the plurality of electrical contacts and one of the plurality of VCSELs that corresponds to the one of the plurality of electrical contacts,', 'wherein a subset of the plurality of VCSELs can be powered via a corresponding subset of the plurality of electrical contacts and a corresponding subset of the plurality of metal ...

Electro-Optic Modulator Device, Optical Device and Method of Making an Optical Device

An electro-optic modulator device includes a modulation region, a reflecting region, a conductive line and an anti-reflecting region. The modulation region includes a doped region. The reflecting region is over the modulation region. The conductive line is connected to the doped region. The conductive line extends through the reflecting region. The anti-reflecting region is on an opposite surface of the modulation region from the reflecting region.

Wavelength tunable laser device and method for manufacturing the same

A wavelength tunable laser device includes a substrate including silicon, the substrate having a waveguide, a first semiconductor element bonded to the substrate, the first semiconductor element including an active layer of a group III-V compound semiconductor, and a second semiconductor element bonded to the substrate, the second semiconductor element facing to the first semiconductor element in a direction along which light emitted from the first semiconductor element propagates, the second semiconductor element including a grating formed of a group III-V compound semiconductor. The grating selects a wavelength of light.

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting element comprising:a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure;a wall structure disposed so as to surround the mesa structure, the wall structure having the same layer structure as a portion of the mesa structure in which the insulation region is provided;at least one bridge structure connecting the mesa structure and the wall structure, the bridge structure having the same layer structure as the portion of the mesa structure in which the insulation region is provided;a first electrode electrically connected to the first compound semiconductor layer; anda second electrode disposed on a top face of the wall structure, the second electrode being electrically connected to the second ...

Laser element

A laser element comprises a substrate, an adhesive layer, and a laser unit adhesive to the substrate by the adhesive layer. The laser unit includes a front conductive structure, a first type semiconductor stack, an active layer, a second type semiconductor stack, a patterned insulating layer, a back conductive structure. The back conductive structure includes a first electrode and a second electrode, and the first electrode of the back conductive structure contacts the second type semiconductor stack. A via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack, and a conductive channel located in the via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure. A first passivation layer formed on a sidewall of the via hole and located between the conductive channel and the sidewall of the via hole.

Semiconductor Laser with Cathode Metal Layer Disposed in Trench Region

A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

Manufacturable laser diode formed on c-plane gallium and nitrogen material

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Thermal Compensation for Burst-Mode Laser Wavelength Drift

An apparatus comprising a burst-mode laser comprising an active layer and configured to emit an optical signal during a burst period, wherein a temperature change of the burst-mode laser causes the optical signal to shift in wavelength, and a heater thermally coupled to the active layer and configured to reduce a wavelength shift of the optical signal during the burst period by applying heat to the active layer based on timing of the burst period.

Tunable laser with high thermal wavelength tuning efficiency

A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.

SEMICONDUCTOR LASER DEVICE, PHOTOELECTRIC CONVERTER, AND OPTICAL INFORMATION PROCESSING UNIT

A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture. 110.-. (canceled)11. A surface emitting semiconductor device comprising:a semiconductor structure having a mesa structure, the semiconductor structure comprising an active layer and a DBR layer;a first electrode on a top surface of the mesa structure;a first insulating film on a side surface and the top surface of the mesa structure, and having a first aperture;a second insulating film on the side surface and the top surface of the mesa structure, the first insulating film being between the mesa structure and the second insulating film, the second insulating film having a second aperture;a first wiring on the second insulating film, the first wiring (a) having a length along a first direction equal to or longer than a radius of the mesa structure along the first direction, (b) being in the first aperture and the second aperture, (c) extending across opposite sides of the second aperture along the first direction in a first cross section, and (d) being electrically connected to the mesa structure through the first aperture and the second aperture; anda second wiring including:(e) a first portion electrically connected to the semiconductor structure at a first contact region and (f) a second portion electrically connected to the semiconductor ...

Atomic oscillator

An atomic oscillator includes a gas cell having alkali metal atoms sealed therein; alight source that irradiates the gas cell with light; and a light detecting unit that detects the quantity of light transmitted through the gas cell. The light source includes an optical oscillation layer having a first reflective layer, an active layer, and a second reflective layer laminated therein in this order, an electrical field absorption layer having a first semiconductor layer, a quantum well layer, and a second semiconductor layer laminated therein in this order, and a heat diffusion layer that is disposed between the optical oscillation layer and the electrical field absorption layer and has a higher thermal conductivity than that of the second reflective layer.

Semiconductor Laser Diode and Method for Manufacturing a Semiconductor Laser Diode

A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment a semiconductor laser diode includes an epitaxially produced semiconductor layer sequence comprising at least one active layer and a gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence. 119-. (canceled)20. A semiconductor laser diode comprising:an epitaxially produced semiconductor layer sequence comprising at least one active layer; anda gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence.21. The semiconductor laser diode according to claim 20 , wherein the passivation layer comprises at least one layer with AlGaN.22. The semiconductor laser diode according to claim 21 , wherein a composition of the AlGaN varies over a thickness of the passivation layer.23. The semiconductor laser diode according to claim 20 , wherein the passivation layer comprises a layer stack with at least one layer with GaN and at least one layer with AlN.24. The semiconductor laser diode according to claim 20 , wherein the passivation layer comprises at least two layers with the same material having different thicknesses.25. The semiconductor laser diode according to claim 20 , wherein the semiconductor layer sequence has a ridge waveguide structure with a ridge having ridge side surfaces claim 20 , and wherein the surface region comprises at least one ridge side surface.26. The semiconductor laser diode according to claim 25 , wherein the passivation layer at least partially planarizes the ridge waveguide structure.27. The semiconductor laser diode according to claim 25 , wherein the passivation layer comprises at least a first layer formed laterally beside the ridge waveguide structure and spaced apart from the ridge waveguide structure claim 25 , and wherein the first layer claim 25 , a trench between the first layer and the ridge waveguide structure claim 25 , and a ...

Vertical cavity surface emitting laser device

A VCSEL device includes an N-type metal substrate and laser-emitting units on the N-type metal substrate. Each laser-emitting unit includes an N-type contact layer in contact with the N-type metal substrate; an N-type Bragg reflector layer in contact with the N-type contact layer; a P-type Bragg reflector layer above the N-type Bragg reflector layer; an active emitter layer between the P-type Bragg reflector layer and the N-type Bragg reflector layer; a current restriction layer between the active emitter layer and the P-type Bragg reflector layer; a P-type contact layer in contact with the P-type Bragg reflector layer; and an insulation sidewall surrounding all edges of the N-type and P-type Bragg reflector layers, the N-type and P-type contact layers, the active emitter layer and the current restriction layer. A P-type metal substrate has through holes each aligned with a current restriction hole of a corresponding laser-emitting unit.

Semiconductor laser device, photoelectric converter, and optical information processing unit

A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.

METHODS OF FABRICATING INTEGRATED CIRCUIT DEVICES WITH COMPONENTS ON BOTH SIDES OF A SEMICONDUCTOR LAYER

A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region arranged above a second side of the silicon layer and encapsulating at least one gain medium of a laser source optically coupled to the waveguide. 1. A method of making an integrated circuit , comprising:providing a substrate comprising a carrier substrate, a buried insulating layer, and a semiconductor layer above the buried insulating layer, the buried insulating layer being above the carrier substrate, the semiconductor layer having a first side and an opposite second side contacting the buried insulating layer;forming a grating coupler in the semiconductor layer;forming a first insulating layer over the first side of the semiconductor layer;forming a mirror in the first insulating layer, the mirror overlapping with the grating coupler;after forming the mirror, removing the carrier substrate and the buried insulating layer to expose the second side of the semiconductor layer; andafter removing the carrier substrate and the buried insulating layer, forming a second insulating layer to cover the exposed second side of the semiconductor layer, wherein the integrated circuit comprising the grating coupler and the mirror forms part of a photonic integrated circuit.2. The method according to claim 1 , wherein the semiconductor layer comprises a silicon layer.3. The method according to claim 1 , further comprising forming a laser source in the second insulating layer.4. The method according to claim 3 , wherein forming the laser source comprises:forming a patterned semiconductor heterostructure over the second insulating layer; anddepositing an encapsulant material surrounding the patterned semiconductor heterostructure.5. The method according to ...

SEMICONDUCTOR DEVICE

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface. 1. A semiconductor device comprising: a first reflective structure;', 'a second reflective structure; and', 'a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface;, 'a semiconductor stack comprising'}a trench formed in the semiconductor stack;a current confinement layer in the second reflective structure;a first electrode on the first surface; anda second electrode on the first surface.2. The semiconductor device according to claim 1 , further comprising an insulating layer filling in the trench.3. The semiconductor device according to claim 1 , further comprising a substrate on which the semiconductor stack is.4. The semiconductor device according to claim 3 , further comprising an etching stop layer between the first electrode and the substrate.5. The semiconductor device according to claim 4 , further comprising a contact layer between the etching stop layer and substrate.6. The semiconductor device according to claim 5 , wherein the contact layer comprises a doped semiconductor.7. The semiconductor device according to claim 1 , wherein the semiconductor device is configured to emit a radiation to escape to the outside in a direction from the first surface toward the second surface.8. The semiconductor device ...

Tunable Waveguide Devices

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.

Semiconductor laser and method for manufacturing the same

A method for manufacturing a semiconductor laser of the present invention includes a step of forming an insulating film on a surface of a grooved semiconductor substrate, a step of pasting an insulating sheet to a top surface of the insulating film so as to cover an opening of the groove and forming an insulating layer on the semiconductor substrate, a step of forming an opening of providing a first opening in the insulating layer so that a part corresponding to an electrode of the semiconductor substrate is exposed and a step of forming the electrode on a top surface of the insulating layer so as to fill the first opening.

Edge-emitting Semiconductor Laser and Method for Operating a Semiconductor Laser

An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. The edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10and by at most 5×10. 1. An edge-emitting semiconductor laser comprising:an active zone within a semiconductor layer sequence; anda stress layer;wherein the active zone is configured to be energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence,wherein the semiconductor layer sequence has a constant thickness throughout in a region of the longitudinal strip so that the semiconductor laser is gain-guided so that a resonator is defined by an energization region of the active zone, and wherein the resonator is free from being defined by a strip waveguide;wherein a spacing between the stress layer and the active zone, in a direction longitudinal with respect to the growth direction, is at most 2 μm;wherein the longitudinal strip is free of the stress layer and the stress layer is disposed only in regions in which no input of current into the semiconductor layer sequence takes place; and{'sup': −4', '−3, 'wherein, as a result of the stress layer, the semiconductor layer sequence is mechanically stressed in a ...

Monolithic nano-cavity light source on lattice mismatched semiconductor substrate

An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects

Wafer scale monolithic integration of lasers, modulators, and other optical components using ald optical coatings

After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.

Laser device with a stepped graded index separate confinement heterostructure

Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.

Semiconductor laser

A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 Ω.

Method of manufacturing surface emitting laser

A method of manufacturing a surface emitting laser includes: preparing a substrate on which a lower reflector layer, an active layer and an upper reflector layer are formed in this order from the bottom, each of the lower reflector layer and the upper reflector layer including a semiconductor multilayer film; forming an insulating film on the upper reflector layer; cleaning the substrate using isopropyl alcohol after the forming; patterning a photoresist by applying the photoresist on the insulating film and exposing the photoresist, after the cleaning; and forming a high resistance region by implanting ions into portions of the lower reflector layer, the active layer and the upper reflector layer exposed from the photoresist, after the patterning; wherein the cleaning includes cleaning the substrate with a liquid of the isopropyl alcohol and drying the substrate in a vapor of the isopropyl alcohol.

Vertical Cavity Surface Emitting Laser With An Integrated Protection Diode

A semiconductor device includes a vertical cavity surface emitting laser (VCSEL) with an integrated protection diode arranged between the VCSEL and an emitting surface. By locating the protection diode above the VCSEL, a minimal increase in substrate area is consumed to protect the VCSEL from electrostatic discharge events. A relatively small capacitance introduced by the protection diode, is controllably adjusted by one of the radial size of the protection diode and the thickness of the intrinsic layer therein. The relatively small capacitance introduced by the protection diode enables the VCSEL to operate at data rates above 10 Gb/s.

Semiconductor Optical Element

A first conduction type first cladding layer and a second conduction type second cladding layer are arranged on the two sides in the vertical direction of a core portion having a multiple quantum-well structure, and a first conduction type third cladding layer and a second conduction type fourth cladding layer are arranged on the two sides in the horizontal direction of the core portion. A first electrode connected to the third cladding layer is formed. A second electrode connected to the fourth cladding layer is formed. A reverse bias is applied between the first and third cladding layers and the second and fourth cladding layers.

Laser element

A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer, a back conductive structure opposite to the front conductive structure, which comprises a plurality of detecting electrodes separated from each other, and a via hole extending from the back conductive structure to the conductive layer, wherein the plurality of detecting electrodes electrically connected to the conductive layer through the via hole

Surface-mount compatible vcsel array

A VCSEL/VECSEL array design is disclosed that results in arrays that can be directly soldered to a PCB using conventional surface-mount assembly and soldering techniques for mass production. The completed VCSEL array does not need a separate package and no precision sub-mount and flip-chip bonding processes are required. The design allows for on-wafer probing of the completed arrays prior to singulation of the die from the wafer. Embodiments relate to semiconductor devices, and more particularly to multibeam arrays of semiconductor lasers for high power and high frequency applications and methods of making and using the same.

MULTILAYER CONDUCTOR INTERCONNECTS FOR HIGH DENSITY LIGHT EMITTER ARRAYS

A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately. 1. A device for generating high density illumination patterns , the device comprising:an array of light emitting elements on a common substrate, each light emitting element including a respective bottom reflector on a substrate side and a top reflector on another side of the light emitting element;a common electrical contact on a bottom substrate side of the light emitting elements;a first dielectric layer on the array of light emitting elements, the first dielectric layer covering the substrate and light emitting elements except for a top electrical contact region of each light emitting element;a first top conductor pattern on the first dielectric layer and contacting the respective top electrical contact regions of a first subset of the light emitting elements;a sequence of at least one additional dielectric layer and at least one additional top conductor pattern disposed such that the top electrical contact regions of respective subsets of light emitting elements are connected to a respective one of the at least one additional top conductor patterns; andelectrical contact pads at a periphery of the array, wherein each of the first top conductor pattern and the additional top conductor patterns is electrically connected respectively to one or more of the electrical contact pads.2. The device of wherein the array of light emitting elements comprises an array of surface emitting elements.3. The device of wherein the array of light emitting elements comprises an array of VCSELs.4. The device of wherein the VCSELs include three-mirror configuration VCSELs.5. The ...

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: forming a ridge on a semiconductor layer stacked on a substrate by removing a part of the semiconductor layer; forming an electrode on the ridge so as to have a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge; forming a protective film disposed on each side of the ridge to cover a region from the side surface of the ridge to the sloped surface of the sloped portion of the electrode; and forming a pad electrode at least on an upper surface of the electrode and the protective film.

Semiconductor optical device

A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32 A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x 2 , a lattice constant along a z-axis is z 2 , a length along an x-axis in one unit of crystals constituting the contact layer 34 is x c ′, and a length along the z-axis is z c ′, (z c ′/x c ′)>(z 2 /x 2 ) is satisfied.

SEMICONDUCTOR LASER DEVICE, PHOTOELECTRIC CONVERTER, AND OPTICAL INFORMATION PROCESSING UNIT

A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture. 1. A surface emitting semiconductor device comprising:a semiconductor structure having a mesa structure, the semiconductor structure comprising an active layer and a DBR layer;a first insulating film on a side surface and the top surface of the mesa structure, and having a first aperture;a second insulating film on the side surface and the top surface of the mesa structure, the first insulating film being between the mesa structure and the second insulating film, the second insulating film having a second aperture;a first wiring on the second insulating film, the first wiring (a) having a length along a first direction equal to or longer than a radius of the mesa structure along the first direction, (b) being in the first aperture and the second aperture, (c) extending across opposite sides of the second aperture along the first direction in a first cross section, and (d) being electrically connected to the mesa structure through the first aperture and the second aperture; anda second wiring including (e) a first portion electrically connected to the semiconductor structure at a first contact region and (f) a second portion electrically connected to the semiconductor structure at a second contact region that is distinct from the first ...

Laser component and method of producing a laser component

A laser component includes an edge-emitting first laser chip with an upper side, a lower side, an end side and a side surface, wherein an emission region is arranged on the end side, the side surface is oriented perpendicularly to the upper side and to the end side, a first metallization is arranged on the upper side, a step by which a part adjacent to the upper side of the side surface is set back, is formed on the side surface, a passivation layer is arranged in the set-back part of the side surface, the laser chip is arranged on a carrier, the side surface faces toward a surface of the carrier, and a first solder contact arranged on the surface of the carrier electrically conductively connects to the first metallization.

Manufacturable laser diode formed on c-plane gallium and nitrogen material

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

COMPACT EMITTER DESIGN FOR A VERTICAL-CAVITY SURFACE-EMITTING LASER

A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions. 120-. (canceled)21. A vertical cavity surface emitting laser (VCSEL) , comprising:an isolation layer including a plurality of extended portions along an outer perimeter of the isolation layer;a dielectric via opening formed on a dielectric layer; and positioned along a portion of the outer perimeter of the isolation layer, and', 'positioned at least partially between a first extended portion of the plurality of extended portions and a second extended portion of the plurality of extended portions., 'an oxidation trench being22. The VCSEL of claim 21 , wherein the oxidation trench is interdigitized with the plurality of extended portions.23. The VCSEL of claim 21 , wherein the oxidation trench is not shared with a different VCSEL.24. The VCSEL of claim 21 , wherein the dielectric via opening includes a plurality of connected dielectric via opening portions.25. The VCSEL of claim 24 , wherein the plurality of connected dielectric via opening portions are connected via at least one arcuate segment between two or more oxidation trenches.26. The VCSEL of claim 24 , wherein the plurality of connected dielectric ...

Laser Diode and Method for Manufacturing a Laser Diode

A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

OPTOELECTRONIC SEMICONDUCTOR COMPONENT

An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium. 1. An optoelectronic semiconductor component comprising a primary light source and a secondary light source , whereinthe primary light source and the secondary light source are monolithically integrated in the semiconductor component so that there is exclusively condensed matter between them,the primary light source comprises a first resonator which contains a semiconductor layer sequence which is electrically pumped during operation,a first resonator axis of the first resonator is oriented parallel to a growth direction of the semiconductor layer sequence,the primary light source is configured to generate a pump laser radiation,the secondary light source comprises at least one pump medium for generating a secondary radiation and the pump medium is optically pumped by the pump laser radiation, andthe first resonator axis points past the pump medium.2. The optoelectronic semiconductor component according to claim 1 ,in which the pump laser radiation is guided only along the resonator axis and resonator end surfaces of the first resonator are opaque to the pump laser radiation,wherein the optical pumping of the pump medium is ...

Tunable Laser With High Thermal Wavelength Tuning Efficiency

A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.

Modified emitter array

An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.

Semiconductor Device and Method

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

Diode laser having reduced beam divergence

The present disclosure relates to a diode laser having reduced beam divergence. Some implementations reduce a beam divergence in the far field by means of a deliberate modulation of the real refractive index of the diode laser. An area of the diode laser (e.g., the injection zone), may be structured with different materials having different refractive indices. In some implementations, the modulation of the refractive index makes it possible to excite a supermode, the field of which has the same phase (in-phase mode) under the contacts. Light, which propagates under the areas of a lower refractive index, obtains a phase shift of π after passing through the index-guiding trenches. Consequently, the in-phase mode is supported and the formation of the out-of-phase mode is prevented. Consequently, the laser field can, in this way, be stabilized even at high powers such that only a central beam lobe remains in the far field.

Nitride semiconductor multilayer structure, light emitting element, light source apparatus, and method for producing nitride semiconductor multilayer structure

A nitride semiconductor multilayer structure includes a first nitride semiconductor layer; a second nitride semiconductor layer; and a third nitride semiconductor layer formed between the first nitride semiconductor layer and the second nitride semiconductor layer. The third nitride semiconductor layer includes a first region and a second region that surrounds the first region in a same plane, and an indium content of the second region is lower than an indium content of the first region.

Multi-wavelength surface plasmon laser and optoelectronic integrated circuit including the same

A multi-wavelength surface plasmon laser that simultaneously emits surface plasmons having a large number of wavelengths and includes an active layer whose thickness changes with position, and a metal cavity whose length changes with position so that light of different wavelengths is emitted according to position. Surface plasmons are generated at the interface between a metal layer and a semiconductor layer in response to the light of different wavelengths. The surface plasmons having different wavelengths may be resonated in the metal cavity whose length changes with position and may be emitted to the outside.

Surface-emitting laser, surface-emitting laser array, laser apparatus, ignition device and internal combustion engine

A surface-emitting laser includes a plurality of semiconductor layers; an active layer; and spacer layers, between which the active layer is held. The active layer includes a first layer including aluminum gallium indium arsenide ((Al x Ga 1-x ) y In 1-y As, where x and y are greater than or equal to zero but less than one), and a second layer including aluminum gallium indium arsenide ((Al m Ga 1-m ) n In 1-n As, where m and n are greater than or equal to zero but less than one, and at least one of m-x and n-y is not zero). The spacer layers includes aluminum gallium indium phosphide ((Al a Ga 1-a ) b In 1-b P, where a and b are greater than or equal zero but less than one). The plurality of semiconductor layers and the active layer held between the spacer layers are laminated.

SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a semiconductor element includes forming a first silicon oxide film on a semiconductor wafer under a first film forming condition; forming a second silicon oxide film on the first silicon oxide film under a second film forming condition, a density of the second silicon oxide film being lower than a density of the first silicon oxide film; coating, with a photoresist, a region including the second silicon oxide film; exposing the photoresist using a photomask having an aperture and being disposed such that at least a portion of an edge of the aperture is disposed on the second silicon oxide film; removing a portion of the photoresist to form a photoresist pattern that has an overhang shape in a cross-section of the photoresist pattern; forming an electrode film on a region including the photoresist pattern; and performing lift-off by removing the photoresist pattern. 1. A method of manufacturing a semiconductor element , the method comprising:forming a first silicon oxide film on a semiconductor wafer under a first film forming condition;forming a second silicon oxide film on the first silicon oxide film under a second film forming condition, a density of the second silicon oxide film being lower than a density of the first silicon oxide film;coating, with a photoresist, a region including the second silicon oxide film;exposing the photoresist using a photomask, the photomask having at least one aperture and being disposed such that at least a portion of an edge of the at least one aperture is disposed on the second silicon oxide film;removing a portion of the photoresist using a developer solution so as to form a photoresist pattern that has an overhang shape in a cross-section of the photoresist pattern;forming an electrode film on a region including the photoresist pattern; andperforming lift-off by removing the photoresist pattern, to remove an unnecessary portion of the electrode film.2. The method of manufacturing a semiconductor ...

Method for fabricating surface emitting laser

A method for fabricating a surface emitting laser includes the steps of: preparing an epitaxial substrate including a substrate and a laminate disposed on the substrate, the laminate including a Bragg reflector and an active layer; forming a mask for defining a semiconductor post on the epitaxial substrate; after forming the mask, placing the epitaxial substrate in an etching apparatus with an end point detector including an optical device; carrying out plasma etching of the epitaxial substrate by supplying a gas including boron chloride and chlorine in the etching apparatus; and stopping the plasma etching in response to an end point detection from the end point detector of the etching apparatus. The optical device of the end point detector detects an end point of a process through a viewport of the etching apparatus. The plasma etching is carried out in a process pressure of one Pascal or less.

Creating arbitrary patterns on a 2-D uniform grid VCSEL array

An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation. 1. An optoelectronic device , comprising:a semiconductor substrate; and first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack;', 'second epitaxial layers formed over the lower DBR stack, defining a quantum well structure;', 'third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and', 'electrodes formed over the upper DBR stack,, 'a regular array of optoelectronic cells, which are formed on the semiconductor substrate and comprise a first set of the optoelectronic cells in which the electrodes are configured to inject an excitation current into the quantum well structure of the optoelectronic cells in the first set, so that the optoelectronic cells in the first set emit laser radiation in response to the excitation current; and', 'a second set of the optoelectronic cells, interleaved with the first set of the optoelectronic cells in the regular array, such that the electrodes of the optoelectronic cells in the second set of the ...

Semiconductor laser apparatus and semiconductor laser device

A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.

Substrate technology for quantum dot lasers integrated on silicon

A method of creating a laser, comprising: bonding a III-V semiconductor material with a silicon substrate; removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate; and after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer.

VCSELs with improved optical and electrical confinement

An optoelectronic device includes a semiconductor substrate with a first set of epitaxial layers formed on an area of the substrate defining a lower distributed Bragg-reflector (DBR) stack. A second set of epitaxial layers formed over the first set defines a quantum well structure, and a third set of epitaxial layers, formed over the second set, defines an upper DBR stack. At least the third set of epitaxial layers is contained in a mesa having sides that are perpendicular to the epitaxial layers. A dielectric coating extends over the sides of at least a part of the mesa that contains the third set of epitaxial layers. Electrodes are coupled to the epitaxial layers so as to apply an excitation current to the quantum well structure.

Vertical-cavity surface-emitting laser

A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, a ring-shaped trench passing through the upper mirror, the aperture forming layer, and the active layer to define an isolation region therein, and a plurality of oxidation holes disposed in the isolation region surrounded by the trench, and passing through the upper mirror and the aperture forming layer.

SEMICONDUCTOR LASER DIODE, METHOD FOR PRODUCING A SEMICONDUCTOR LASER DIODE AND SEMICONDUCTOR LASER DIODE ARRANGEMENT

A semiconductor laser diode is specified, comprising a semiconductor layer sequence () with semiconductor layers applied vertically one above another with an active layer (), which emits laser radiation via a radiation coupling-out surface during operation, wherein the radiation coupling-out surface is formed by a side surface of the semiconductor layer sequence (), and a heat barrier layer () and a metallic contact layer () laterally adjacent to one another on a main surface () of the semiconductor layer sequence (), wherein the heat barrier layer () is formed by an electrically insulating porous material (). As a result, the heat arising during operation is conducted via the p-type electrode () to a heat sink () and the formation of a two-dimensional temperature gradient is avoided. A thermal lens in the edge emitter is thus counteracted. Furthermore, a method for producing a semiconductor laser diode and a semiconductor laser diode arrangement are specified. 1. A semiconductor laser diode , comprisinga semiconductor layer sequence with semiconductor layers applied vertically over one another with an active layer, which emits laser radiation via a radiation output surface during operation, wherein the radiation output surface is formed by a side face of the semiconductor layer sequence, anda thermal barrier layer and a metallic contact layer laterally adjacent to one another on a main surface of the semiconductor layer sequence,wherein the thermal barrier layer is formed by an electrically insulating porous material.2. The semiconductor laser diode according to claim 1 , wherein the contact layer has a strip-shaped embodiment on the main surface of the semiconductor layer sequence and adjoins the thermal barrier layer at at least two side faces.3. The semiconductor laser diode according to claim 1 , wherein a dielectric capping layer is arranged on a side of the thermal barrier layer facing away from the semiconductor layer sequence.4. The semiconductor laser ...

SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER ARRANGEMENT

In one embodiment of the invention, the semiconductor laser () comprises a semiconductor layer sequence (). The semiconductor layer sequence () contains an n-type region (), a p-type region () and an active zone () lying between the two. A laser beam is produced in a resonator path (). The resonator path () is aligned parallel to the active zone (). In addition, the semiconductor laser () contains an electrical p-contact () and an electrical n-contact () each of which is located on the associated region () of the semiconductor layer sequence () and is configured to input current directly into the associated region (). A p-contact surface () is electrically connected to the p-contact (), and an n-contact surface () is electrically connected to the n-contact () such that the p-contact surface () and the n-contact surface () are configured for external electrical and mechanical connection of the semiconductor laser (). The contact surfaces () are oriented parallel to a growth direction (G) of the semiconductor layer sequence (). The semiconductor laser () can be surface-mounted without wires. 2. The semiconductor laser according to claim 1 , in which the resonator line and the growth direction are oriented parallel to the parts of the contact areas which are located in the common mounting plane claim 1 , with a tolerance of at most 2° claim 1 ,wherein a distance between the resonator line and the mounting plane is between 40 μm and 0.6 mm inclusive.3. The semiconductor laser according to claim 1 ,in which the n-contact extends from the p-conducting region through the active zone into the n-conducting region and, viewed in a plan view, is located next to the resonator line.4. The semiconductor laser according to claim 3 , in which claim 3 , in at least one cross section parallel to the active zone claim 3 , the n-contact or the p-contact is surrounded all around by a material of the semiconductor layer sequence claim 3 , wherein the n-contact and the p-contact each ...

Method for manufacturing optical semiconductor device

A ridge structure ( 9 ) having a ridge lower part ( 6 ), a ridge upper part ( 8 ) above the ridge lower part ( 6 ) and having a larger width than the ridge lower part ( 6 ), is formed on a semiconductor substrate ( 1 ). A recess ( 11 ) of the ridge structure ( 9 ), where the ridge lower part ( 6 ) is laterally set back from the ridge upper part ( 8 ) due to a difference in width between the ridge upper part ( 8 ) and the ridge lower part t ( 6 ), is completely filled with an insulating film ( 10 ) by an atomic layer deposition method to form a protrusion ( 19 ) from the semiconductor substrate ( 1 ), the ridge structure ( 9 ), and the insulating film ( 10 ) without any step in a side face of the protrusion ( 19 ).

SEMICONDUCTOR LASER DIODE

A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element. 113-. (canceled)14. A semiconductor laser diode comprising:a semiconductor body having an emitter region; anda first connection element that electrically contacts the semiconductor body in the emitter region,whereinthe semiconductor body is in contact with the first connection element in the emitter region, andat least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.15. The semiconductor laser diode according to claim 14 , whereinthe structuring has a density of structures, wherein the density of the structures increases towards a radiation exit surface,the semiconductor body comprises a subregion arranged laterally adjacent to the emitter region,at least in places in the subregion, the semiconductor body has a further structuring comprising further structures, wherein the further structuring is configured to weaken secondary modes, andthe structures of the structuring have a mean height (h) that is smaller than a mean height (h) of the further structures of the further structuring.16. The semiconductor laser diode according to claim 14 , wherein the structuring has a density of structures and the density of the structures increases toward a radiation exit surface.17. The semiconductor laser diode according to claim 16 , wherein the closer the structures are to the radiation exit surface claim 16 , the smaller a distance (d) is between the neighboring structures.18. The semiconductor ...

Semiconductor device and manufacturing method of the same

According to the present invention, a first semiconductor chip includes a semiconductor substrate, an optical waveguide formed on an upper surface of the semiconductor substrate, and a concave portion formed in the semiconductor substrate in a region that differs from a region in which the optical waveguide is formed. A second semiconductor chip includes a compound semiconductor substrate, and a light emitting unit formed on an upper surface of the compound semiconductor substrate and emitting a laser beam. The second semiconductor chip is mounted in the concave portion of the first semiconductor chip, and a pedestal which is an insulating film is formed between a bottom surface of the concave portion and a back surface of the compound semiconductor substrate.

Tunable Laser And Control Method For Same

A tunable laser is provided, including a first reflector, a second reflector, a phase adjustment area, a gain area, a first detector, a second detector, and a controller. The phase adjustment area is located between the first reflector and the gain area, the gain area is located between the phase adjustment area and the second reflector, a reflectivity of the first reflector is adjustable, and a reflectivity of the second reflector is adjustable. The first detector is configured to convert an optical signal of the first reflector into a first electrical signal. The second detector is configured to convert an optical signal of the second reflector into a second electrical signal. The controller is configured to adjust at least one of the reflectivity of the first reflector or the reflectivity of the second reflector based on the first electrical signal and the second electrical signal.

Semiconductor chip and method for producing a semiconductor chip

A semiconductor chip ( 100 ) is provided, having a first semiconductor layer ( 1 ), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip ( 100 ).

Tunable Waveguide Devices

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core. 1. A laser comprising:a layer having first and second regions, the first region including a void; a waveguide core, at least part of the waveguide core is provided over at least a portion of the void;', 'a grating;', 'a first cladding provided between the layer and the waveguide core, at least a portion of the first cladding being supported by the second region of the layer;', 'a second cladding provided on the waveguide core; and', 'a heat source configured to change a temperature of at least one of the waveguide core or the grating,, 'a mirror section provided on the layer, the mirror section comprisingwherein an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.2. The laser in accordance with claim 1 , wherein a loss incurred by the optical mode during said propagation in the mirror is less than 7 dB/cm.3. The laser in accordance with claim 2 , wherein a loss incurred by the optical mode during said propagation in the mirror is less than 5 dB/cm.4. The laser in accordance with claim 3 , wherein a ...

Tunable Waveguide Devices

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core. 1. A semiconductor laser , comprising:a substrate;a layer formed on the substrate, the layer having first and second regions, the first region of the layer including one or more voids; and a waveguide core, wherein at least part of the waveguide core is provided over a first void,', 'a grating,', 'a first cladding provided between the layer and the waveguide core, wherein at least a portion of the first cladding is provided over at least a portion of the second region of the layer, and', 'a second cladding provided on the waveguide core; and, 'a mirror section provided on the layer, the mirror section comprisinga first electrode and a second electrode, the first electrode being coupled to the second cladding, such that a current flows between the first and second electrodes and through at least a portion of the second cladding, such that heat generated by the current adjusts a temperature of a portion of the waveguide core.2. A semiconductor laser in accordance with claim 1 , wherein the first electrode is coupled to the second cladding at a plurality of locations along the contact layer.3. A semiconductor laser in accordance with claim 1 ...

Interband Cascade Lasers with Low-Fill-Factor Top Contact for Reduced Loss

A DFB laser having a reduced fill factor and reduced loss. A plurality of spaced-apart contact openings are etched into a dielectric layer situated on top of a laser ridge having a DFB grating layer so that electrical contact between the metal top contact layer and the DFB gratings is made only in the etched openings, since all other areas of the top surface of the DFB-grated laser ridge are insulated from the metal contact layer by the dielectric. The size and shape of contact openings and their spacing are configured so that the ratio of the total area of the openings to the total area of the laser ridge provides a fill factor of less than 100%.

EX-SITU CONDITIONING OF LASER FACETS AND PASSIVATED DEVICES FORMED USING THE SAME

Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form. 1. An edge-emitting laser diode comprisinga semiconductor substrate having a waveguide structure formed thereon for generating light at an operating wavelength;a pair of cleaved facets formed on opposing faces of the waveguide structure;irradiated passivation layers of a predetermined thickness disposed to cover the pair of cleaved facets, the irradiated passivation layers exhibiting a homogeneous structure through the predetermined thickness to provide conditioned, irradiated passivation layers; anda reflective coating layer formed directly over at least one of the irradiated passivation layers.2. The edge-emitting laser diode as defined in wherein the reflective coating layer is an irradiated reflective coating layer.3. The edge-emitting laser diode as defined in wherein the irradiated passivation layers comprise a homogenous material selected from the group consisting of:silicon, germanium, antimony, as well as oxides and nitrides thereof.4. The edge-emitting laser diode as defined in wherein the reflective coating layer is formed of a material selected from the group consisting of: silicon claim 1 , germanium claim 1 , gallium arsenide claim 1 , silicon oxide claim 1 , silicon nitride claim 1 , aluminum oxide claim 1 , titanium oxide claim 1 , aluminum nitride and tantalum oxide. ...

Low current, high power laser diode bar

A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.

Edge-emitting Semiconductor Laser and Method for Operating a Semiconductor Laser

An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. In an embodiment, the edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10and by at most 5×10. 1. An edge-emitting semiconductor laser comprising:an active zone within a semiconductor layer sequence; anda stress layer,wherein the active zone is configured to be energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence,wherein the semiconductor layer sequence has a constant thickness throughout in a region of the longitudinal strip so that the semiconductor laser is gain-guided,{'sup': −4', '−3, 'wherein, as a result of the stress layer, the semiconductor layer sequence is mechanically stressed in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction so that a refractive index next to the longitudinal strip, seen in plan view, for laser radiation generated during operation is reduced by at least 2×10and by at most 5×10thereby obtaining index guidance of the laser radiation.'}2. The semiconductor laser according to claim 1 , wherein tensile stress induced by the stress layer is at least 50 MPa and at most 0. ...

Methods of Fabricating Integrated Circuit Devices With Components on Both Sides of a Semiconductor Layer and the Devices Formed Thereby

A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region arranged above a second side of the silicon layer and encapsulating at least one gain medium of a laser source optically coupled to the waveguide. 1. A method of making an integrated circuit , the method comprising:providing a first substrate comprising a carrier substrate, a buried insulating layer, and semiconductor layer above a buried insulating layer, the buried insulating layer being above a carrier substrate, the first substrate having a first side and an opposite second side, the semiconductor layer having a first semiconductor layer side and a second semiconductor layer side;from the first semiconductor layer side, forming a first waveguide in the semiconductor layer;forming a first insulating layer over the first side of the substrate;forming a metallization level comprising a metal line within the first insulating layer;attaching a second substrate over the first insulating layer;flipping the first substrate after the attaching;from the second side of the first substrate, removing the carrier substrate and the buried insulating layer;forming a laser source over the second semiconductor layer side of the semiconductor layer, the laser source being formed directly over the first waveguide; andencapsulating the laser source in a second insulating layer, wherein the integrated circuit comprising the first waveguide and the laser source forms part of a photonic integrated circuit.2. The method of claim 1 , wherein forming the laser source comprises:depositing a n-type semiconductor layer stack over the second insulating layer;depositing a quantum well layer stack over the n-type semiconductor layer stack;depositing a p-type semiconductor ...

QUANTUM CASCADE LASER, LIGHT EMITTING APPARATUS, METHOD FOR FABRICATING QUANTUM CASCADE LASER COMPRISING

A quantum cascade laser comprises: a laser structure including a first region, a second region, and a third region, the first region having an end face; a high-specific resistance region disposed on the first and second regions; a metal layer disposed on the third region; a dielectric film disposed on the end face and the high-specific resistance region; and a reflective metal film disposed on the dielectric film, the end face and the high-specific resistance region. The first to third regions are arranged in order in a direction of a first axis. The laser structure has a terrace on a boundary between the second and third regions, and the laser structure includes a semiconductor mesa and a conductive base. The semiconductor mesa has a core layer, and the conductive base mounts the semiconductor mesa. The high-specific resistance region has a specific resistance larger than that of the conductive base. 1. A quantum cascade laser comprising:a laser structure including a first region, a second region, and a third region, the first region having an end face;a high-specific resistance region disposed on the first region and the second region;a metal layer disposed on the third region;a dielectric film disposed on the end face and the high-specific resistance region; anda reflective metal film disposed on the dielectric film, the end face and the high-specific resistance region,the first region, the second region, and the third region being arranged in order in a direction of a first axis,the laser structure having a terrace with a difference in level disposed on a boundary between the second region and the third region, andthe laser structure including a semiconductor mesa and a conductive base, the semiconductor mesa having a core layer, and the conductive base mounting the semiconductor mesa, and the high-specific resistance region having a specific resistance larger than that of the conductive base.2. The quantum cascade laser according to claim 1 , whereinthe high- ...