04-04-2019 дата публикации
Номер: US20190104604A1
Автор:
Shang-Chieh CHIEN,
Chi YANG,
Jen-Yang CHUNG,
Shao-Wei LUO,
Tzung-Chi FU,
Chun-Kuang CHEN,
Li-Jui CHEN,
Po-Chung CHENG,
CHIEN SHANG-CHIEH,
YANG CHI,
CHUNG JEN-YANG,
LUO SHAO-WEI,
FU TZUNG-CHI,
CHEN CHUN-KUANG,
CHEN LI-JUI,
CHENG PO-CHUNG,
CHIEN, Shang-Chieh,
YANG, Chi,
CHUNG, Jen-Yang,
LUO, Shao-Wei,
FU, Tzung-Chi,
CHEN, Chun-Kuang,
CHEN, Li-Jui,
CHENG, Po-Chung
Принадлежит:
An extreme ultraviolet (EUV) source includes a collector mirror, a drain, a droplet generator configured to eject a target material toward the drain, a pellicle disposed over the collector mirror. The pellicle is configured to catch debris formed of the target material. 1. An extreme ultraviolet (EUV) source , comprisinga collector mirror;a drain;a droplet generator configured to eject a target material toward the drain;a pellicle disposed over the collector mirror, wherein the pellicle is configured to catch debris formed of the target material.2. The EUV source of claim 1 , wherein the pellicle is disposed between the collector mirror and a straight line between the droplet generator and the drain.3. The EUV source of claim 1 , wherein the pellicle is positioned outside an intermediate focus of the collector mirror.4. The EUV source of claim 1 , further comprising a frame assembly configured to be removably coupled to the drain.5. The EUV source of claim 4 , the frame assembly is operated by at least one of a rotation mechanism claim 4 , sliding mechanism claim 4 , hinge mechanism claim 4 , and nuts and bolts.6. The EUV source of claim 1 , wherein the pellicle is made of an EUV light-transmitting material including silicon carbide claim 1 , polysilicon claim 1 , graphene claim 1 , and silicon nitride.7. The EUV source of claim 1 , wherein the collector mirror is made of a multi-layered mirror including Mo/Si claim 1 , La/B claim 1 , La/BC claim 1 , Ru/BC claim 1 , Mo/BC claim 1 , AlO/BC claim 1 , W/C claim 1 , Cr/C claim 1 , and Cr/Sc.8. The EUV source of claim 7 , further comprising a capping layer formed on the collector mirror.9. The EUV source of claim 8 , wherein the capping layer includes SiO claim 8 , Ru claim 8 , TiO claim 8 , and ZrO.10. An extreme ultraviolet (EUV) source claim 8 , comprisinga collector mirror;a drain;a droplet generator configured to eject a target material toward the drain;a plurality of pellicle disposed over the collector mirror, ...
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