09-05-2023 дата публикации
Номер: CN116093136A
Принадлежит:
The invention discloses a novel GaN buried layer enhanced HEMT (High Electron Mobility Transistor) device and a manufacturing method, the device comprises a substrate, a first U-GaN high-resistance layer, a P-GaN buried layer, a second U-GaN high-resistance layer, a U-AlGaN layer, an N-AlGaN layer, a gate dielectric layer and an electrode which are stacked in sequence, and the AlGaN layer is etched to form a first groove. The method comprises the steps of sequentially forming a substrate, a first U-GaN high-resistance layer, a P-GaN buried layer, a second U-GaN high-resistance layer, a U-AlGaN layer and an N-AlGaN layer, etching the AlGaN layer to form a first groove, and then forming a gate dielectric layer and an electrode. According to the enhanced HEMT device provided by the invention, the AlGaN layer is thinned, so that the polarization at the interface of the AlGaN and the GaN is weaker, the density of two-dimensional electron gas below the groove is reduced, and a U-GaN/P-GaN/U-GaN ...
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