14-06-2018 дата публикации
Номер: US20180164686A1
Принадлежит:
Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided. 2. The composition of wherein at least one condensable silicon monomer has the formula (8){'br': None, 'sup': '50', 'sub': p', '4-p, 'Si(R)(X)\u2003\u2003(8)'}{'sup': 50', '50', '51', '1', '1', '50', '51', '50, 'sub': 1-30', '1-30', '1-10', '2', 'p2', '1-10, 'wherein p is an integer from 0 to 3; each Ris independently chosen from a Chydrocarbyl moiety and a substituted Chydrocarbyl moiety; and each X is independently chosen from halo, Calkoxy, —OH, —O—C(O)—R, and —(O—Si(R))—X; Xis independently chosen from halo, Calkoxy, —OH, —O—C(O)—R; each Ris independently chosen from Rand X; and p2 is an integer from 1 to 10.'}3. The composition of wherein the condensable silicon-containing moiety has the formula{'br': None, 'sup': 1', '1, 'sub': b', '3-b, '*-L-SiRY'}{'sup': 1', '1, 'sub': 1-10', '2-20', '5-20', '6-20', '1-10', '5-10', '1-10, 'wherein L is a single covalent bond or a divalent linking group; each Ris independently chosen from H, C-alkyl, C-alkenyl, C-aryl, and C-aralkyl; each Yis independently chosen from halogen, C-alkoxy, C-aryloxy, C-carboxy; b is an integer from 0 to 2; and * denotes the point of attachment to the polymer backbone.'}4. The composition of wherein L is a divalent linking group.5. The composition of wherein the divalent linking group comprises one or more heteroatoms chosen from oxygen and silicon.6. The composition of wherein the divalent linking group is an organic radical having from 1 to 20 carbon atoms and optionally one or more heteroatoms.7. The composition of wherein the divalent linking group has the formula —C(═O)—O-L- wherein Lis ...
Подробнее