ИНТЕГРАЛЬНАЯ СХЕМА С МАТРИЦЕЙ СЕНСОРНЫХ ТРАНЗИСТОРОВ, СЕНСОРНОЕ УСТРОЙСТВО И СПОСОБ ИЗМЕРЕНИЯ

Изобретение относится к аналитической химии. Раскрыта сенсорная матрица интегральной схемы (100), содержащей полупроводниковую подложку (110); изолирующий слой (120) поверх упомянутой подложки; первый транзистор (140a) на упомянутом изолирующем слое, содержащий открытую функционализированную область (146a) канала между областью (142a) истока и областью стока (144) для восприятия аналита в среде; второй транзистор (140b) на упомянутом изолирующем слое, содержащий открытую область (146b) канала между областью (142b) истока и областью (144) стока для восприятия потенциала упомянутой среды; и генератор (150) напряжения смещения, проводящим образом связанный с полупроводниковой подложкой для подачи на упомянутые транзисторы напряжения смещения, при этом упомянутый генератор напряжения смещения является реагирущим на упомянутый второй транзистор. Также раскрыты сенсорное устройство, содержащее такую ИС, и способ измерения аналита с использованием такой ИС. Изобретение обеспечивает формирование ...

ИОНОСЕЛЕКТИВНЫЙ ПОЛЕВОЙ ТРАНЗИСТОР

Использование: полупроводниковые датчики для определения различных химических веществ в растворах потенциометрическими методами анализа в медицине, биологии, сельском хозяйстве, а также в системах контроля окружающей среды. Сущность изобретения: ионоселективный полевой транзистор, включающий монокристаллическую подложку с расположенными на ней затвором, содержащим последовательно нанесенные слои диоксида кремния и пентоксида тантала, и ионочувствительной мембраной, пластифицированной в поливинилхлоридной матрице, дополнительно содержит промежуточный слой полимерного соединения толщиной 1 - 3 мкм, выбранного из класса гребнеобразных полимеров на основе полиалкилметакрилатов или полиалкилакрилатов с длиной алкильной цепочки C10-C22, при этом промежуточный слой расположен между слоем пентоксида тантала затвора и ионоселективной мембраной. 1 ил., 1 табл.

СПОСОБ ВЫРАВНИВАНИЯ ПАРАМЕТРОВ КАНАЛОВ РЕГИСТРАЦИИ МНОГОКАНАЛЬНОГО НАНОПРОВОДНОГО ДЕТЕКТОРА

Изобретение относится к электронной технике, а более конкретно к области «Измерение электрических и магнитных величин». Устройство состоит из многоканального нанобиосенсора, каждый канал которого состоит из нанопроводного полевого транзистора, преобразователя ток-напряжение, сумматора 1, умножителя, суматора 2, АЦП, ЦАП, микропроцессора и ПЭВМ. Технологический разброс параметров нанопроводного полевого транзистора компенсируется за счет изменения коэффициента усиления усилителей и компенсации постоянной составляющей сигнала. Техническим результатом является снижение требования производства к повторяемости нанопроволочного детектора, что повышает процент годных к использованию нанопроволочных детекторов. 1 ил.

СПОСОБ ИЗМЕРЕНИЯ АКТИВНОСТИ ИОНОВ В РАСТВОРАХ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

Изобретение относится к измерительной технике, а именно к ионометрии, и может быть применено в системах экологического мониторинга. Технический результат изобретения - повышение точности определения активности ионов в растворе. Сущность изобретения: способ измерения активности ионов в растворах, включая компенсацию изменений напряжения сток-исток ионоселективного полевого транзистора, вызванных отклонением потенциала ионоселективной мембраны, дополнительное измерение температуры на поверхности ионоселективной мембраны полевого транзистора и в соответствии с математической моделью физико-химических процессов в измерительной ячейке нахождение искомой активности ионов. Также предложено устройство измерения активности ионов в растворах. 2 с.п. ф-лы, 4 ил.

БЛОК ДЕТЕКТИРОВАНИЯ ЛЕТУЧИХ ОРГАНИЧЕСКИХ СОЕДИНЕНИЙ В СОСТАВЕ ВЫДЫХАЕМОГО ЧЕЛОВЕКОМ ВОЗДУХА

Изобретение относится к медицинской технике. Блок детектирования летучих органических соединений в составе выдыхаемого воздуха содержит две изолированные друг от друга газовые сенсорные ячейки, датчик температуры воздуха, датчик относительной влажности воздуха, два изолированных друг от друга воздушных канала и микроконтроллер. Массив полуселективных газовых сенсоров ячеек выполнен с различным механизмом отклика, выбранного таким образом, чтобы давать некоррелированный отклик на маркеры заболеваний в выдыхаемом воздухе. Каждый канал соединен со своей ячейкой. Один канал обеспечивает отбор и подачу в ячейку выдыхаемого воздуха. Второй канал обеспечивает отбор и подач в ячейку атмосферного воздуха. Микроконтроллер обеспечивает получение отклика каждого газового сенсора ячеек и сравнение полученных откликов с тестовыми, соответствующими подтвержденному или опровергнутому диагнозу, а также выдачу по результатам сравнения информации о том, болеет человек указанным заболеванием или нет. Достигается ...

Устройство для измерения электрохимического потенциала активности ионов в растворах

Изобретение относится к электрохимическим измерениям, в частности к р 1-метрии, и может быть использовано в химии, биологии и медицине, но преимущественно в электрохимии. Цель изобретения - повышение точности и упрощение конетрукции,повышение надежности и снижение потребляемой мощности. Устройство содержит усилитель 5, источник тока 1, подключенный к источнику напряжения 8 и инвертирующему входу усилителя 5, резистор 4, включенный между выходом усилителя 5 и его неинвертирующим входом, электрохимическую ячейку с поменянными в нее электродами вспомогательным соединенным с общей шиной устройства и ИСПТ 7, сток последнего соединен с инвертирующим входом усилителя, а исток подключен к выходу усилителя 5, который является выходом устройства, источник тока 2, подключенный к стоку ИСПТ 7 и источнику напряжения 8, источник тока 3, подключенный к истоку ИСПТ и ИСТОЧНИКУ напряжения 8 „ 1 ил. с « (/ ...

ELEKTROSTATISCHER ENTLADUNGSSCHUTZ FÜR EINEN ISFET-SENSOR

SALTS OF PHOSPHORIC ACID DIESTERS, THEIR PREPARATION AND USE IN MEMBRANES, THE MEMBRANES AND THEIR USE IN CALCIUM ION DETERMINATION, AND THE ELECTRODES CONTAINING THEM

Verfahren zur Messung von physikalischen Phänomenen oder chemischen Phänomenen und Vorrichtung dafür

Messen von Biomolekülen und geladenen lonen in einem Elektrolyten

Sensor für Biomoleküle oder geladene Ionen, umfassend: ein Substrat; einen ersten Knoten, einen zweiten Knoten und einen dritten Knoten, die in dem Substrat angeordnet sind; ein Gate-Dielektrikum, das über dem Substrat, dem ersten Knoten, dem zweiten Knoten und dem dritten Knoten angeordnet ist; einen ersten Feldeffekttransistor (FET), wobei der erste FET ein Steuer-Gate, das auf dem Gate-Dielektrikum angeordnet ist, und den ersten Knoten und den zweiten Knoten umfasst; und einen zweiten FET, wobei der zweite FET eine Messoberfläche, die auf dem Gate-Dielektrikum angeordnet ist, und den zweiten Knoten und den dritten Knoten umfasst, wobei die Messoberfläche dafür aufgebaut ist, die Biomoleküle oder geladenen Ionen, die nachgewiesen werden sollen, spezifisch zu binden wobei der erste Knoten, der zweite Knoten und der dritte Knoten jeweils den gleichen Dotierungstyp aufweisen und das Substrat einen Dotierungstyp umfasst, der dem Dotierungstyp des ersten Knotens, des zweiten Knotens und des ...

Elektrochemischer Sensor

Die Erfindung bezieht sich auf einen elektrochemischen Sensor (1) mit einem Sensorelement (5), mit einem primärseitigen Steckverbinderelement (2) und einem sekundärseitigen Steckverbinderelement (3), wobei das sekundärseitige Steckverbinderelement (3) mit dem Sensorelement (5) verbindbar ist, wobei das primärseitige Steckverbinderelement (2) und das sekundärseitige Steckverbinderelemenet (3) über eine Steckverbinderkupplung (4) miteinander verbindbar sind und wobei die Energieversorgung und ggf. die Kommunikation zwischen dem primärseitigen Steckverbinderelement (2) und dem Sensorelement (5) bzw. dem sekundärseitigen Steckverbinderelement (3) über die Steckverbinderkupplung (4) erfolgt. Damit der Sensor nach einer Stand-by-Phase sofort einsatzbereit ist, ist dem primärseitigen Steckverbinderelement (2) eine Energieversorgungseinheit (16) zugeordnet, die das Sensorelement (5) über die Steckverbinderkupplung (4) mit einer zum Betrieb des Sensorelements (5) notwendigen Spannung (U) versorgt ...

KALIBRIEREINRICHTUNG FUER VORRICHTUNGEN ZUR AUTOMATISCHEN BESTIMMUNG VON SPUREN VON ORGANISCHEN LOESEMITTELDAEMPFEN IN LUFT

Vorrichtung und Verfahren zur Herstellung biologischer und/oder elektronischer Eigenschaften einer Probe sowie Verwendungen derselben

Vorrichtung zur Messung biologischer und/oder elektronischer Eigenschaften einer Probe, insbesondere zur Messung von Zellparametern insbesondere einzelner menschlicher, pflanzlicher oder tierischer Zellen, umfassend einen Feldeffekttransistor mit einer Kontaktierungseinrichtung zur Kontaktierung der Probe mit dem Gate des Feldeffekttransistors und eine Stimulationseinrichtung zur Beaufschlagung der Probe mit einer elektrischen Wechselspannung, dadurch gekennzeichnet, dass der Feldeffekttransistor ein organischer Feldeffekttransistor ist, Array aus mindestens zwei derartigen Vorrichtungen, Sensor-Chip mit mindestens einer derartigen Vorrichtung, Verfahren zur Messung biologischer und/oder elektronischer Eigenschaften einer Probe, insbesondere zur Messung von Zellparametern insbesondere einzelner menschlicher, pflanzlicher oder tierischer Zellen sowie Verwendungen der Vorrichtung und des Verfahrens und Zell-Chip-Hybridsystem.

Ion-sensitive field effect transistor mfr. for higher reliability - involves electrostatic protection by diodes within well and substrate of CMOS structure in conjunction with pseudo-reference electrode

Drain and source diffusion regions (3) are formed in a p-well (2) in an n-Si substrate (1), and bridged by a gate structure of thermal oxide (7) under a sandwich comprising a thin intermediate thermal oxide layer (9) between insulating layers of Si3N4 (8) and either Si3N4, Ta2O5 or Al2O3 (10). The pseudo-reference electrode (12) on the field oxide (6) makes contact with the electrolyte (17) and is protected electrostatically by Al contacts (11) with n+p and p+n diodes (4, 5). During the Al etching process some metal is left in situ (16) for the structuring of additional passivation (13). Encapsulation (15) is excluded from between edges (14). USE/ADVANTAGE - Pref. in measurement and control technology, improved insulator stability makes for more reliable operation and longer lifetime.

VERFAHREN UND EINRICHTUNG ZUR ERHÖHUNG DER SELEKTIVITÄT VON FET-BASIERTEN GASSENSOREN

Integrated electrochemical and optical sensor with inductor

Sensor cell

Electrostatic discharge protection

A method of fabricating an ISFET device comprising an electrostatic discharge (ESD) protection structure 8, a floating gate 5-7, and a sensing layer 12 located above the floating gate, the device configured such that the electrical impedance from the sensing layer 12 to the ESD protection 8 is less than the impedance from the sensing layer 12 to the floating gate 7, the method comprising: forming a gate insulator material 4; forming a floating gate 5-7 from conductive material on the gate insulator; depositing insulating material on the floating gate; forming an electrostatic protection structure 8 from conductive material; depositing insulating material on the protection structure; and forming a sensing layer 12 on the insulating material.

Pharmaceuticals

SEMICONDUCTOR DEVICES

Method and device for biochemical sensing

A method and application for detecting and measuring the presence of a binding target material (64) employs a semiconductor device (50) having a receptor-covered surface (90) topgate (60), separated by a dielectric layer (58) from a substrate (56). Receptors (66) attached to this surface exhibit a chemical selectivity function. Binding occurs in a test solution (52), with charge associated with the target material (64) modulating at least one device characteristic. According to the present invention, measurement may occur under dry conditions, at a time and location different from when binding occurred, thus substantially eliminating problems associated with ionic shielding and reference electrodes, so prevalent with prior art wet measurement techniques. Preferably the device (50) includes backgate (62) to which a bias may be applied to restore the devices pre-binding characteristics. Measurement of the restorative backgate bias provides a signal indicating binding of the desired target ...

Sensing apparatus and method

A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localised fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the ion sensitive field effect transistor, the localised fluctuations of ionic charge indicating events occurring during a chemical reaction.

CHEMICAL SENSOR DEVICE WITH FIELD EFFECT TRANSISTOR

Chemical sensing device

Biomolecule measuring device

Sensor device for detection of dissolved hydrocarbon gases in oil filled high-voltage electrical equipment

A multi-gas sensor device (10) for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment comprises a semiconductor substrate (12, 14) one or more catalytic metal gate-electrodes (16) deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact (22) deposited on the surface of the substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprises providing a sensor device (10) immersed in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes (16), altering the gas as it contacts the catalytic metal gate-electrodes (16) and altering the sensitivity of the sensor. The device (10) may have a passivation layer for increasing the selectivity to different gases and a heating element.

Nucleic acid sequencing using chemically-sensitive field effect transistors (chemFETs)

A method for sequencing a nucleic acid using chemFET (e.g. ISFET, pHFET) arrays based on monitoring changes in the concentration of inorganic pyrophosphate (PPi), hydrogen ions, and nucleotide triphosphates. Also claimed is an apparatus for detection of ion pulses comprising a laminar fluid flow system; a method for manufacturing a sequencing device comprising generating wells in a glass material on top of an array of transistors; a method for manufacturing an array of FETs coupled to a floating gate; and reaction methods for determining nucleotide sequences.

Biomolecule measuring device

A biomolecule measuring device, wherein a semiconductor sensor for detecting ions generated by a reaction between a biomolecule sample and a reagent is installed. The semiconductor sensor comprises a plurality of cells which are disposed on a semiconductor substrate and detect ions, and a plurality of sense lines. Each of the plurality of cells includes an ISFET which has a floating gate and detects ions, a first MOSFET (M2) which amplifies the output of the ISFET, and a second MOSFET (M3) which selectively transmits the output of the first MOSFET to a sense line (R1) corresponding thereto. Each of the plurality of cells is provided with a third MOSFET (M1) which generates hot electrons in the ISFET and injects an electric charge into the floating gate of the ISFET. The second MOSFET and the third MOSFET are separately controlled.

HUMIDITY SENSOR

SEMICONDUCTOR DEVICE RESPONSIVE TO IONS

Organic thin film transistor gas sensor system

A gas sensor system for a conjugated hydrocarbon (eg styrene) has first and second OTFT gas sensors, each having source and drain electrodes 107, 109 in contact with organic semiconductor layer 111, gate electrode 103, and gate dielectric 105 between the gate and the semiconductor layer. The first OTFT allows the hydrocarbon to communicate with source and drain; the second OTFT (which may sense an alkyl or or alkanoate ester) blocks it from doing so. The first organic semiconductor layer may be crystalline; the second organic semiconductor layer may be amorphous. Blocking layer 113, perhaps a thiol monolayer, may be disposed on source and drain electrode surfaces. In aspects, an OTFT gas sensor for a conjugated hydrocarbon is configured as the first OTFT; or an OTFT gas sensor for an ester is configured as the second OTFT except that environmental gases are blocked from communicating with source and drain.

Organic thin film transistor gas sensor

An OTFT gas sensor has source and drain electrodes 107, 109 in electrical contact with an organic semiconductor layer 111, a gate electrode 103, and a gate dielectric 105 between the organic semiconductor layer and the gate electrode. A protic group 113, e.g. an amino group, is bound to surfaces of the source and drain electrodes. The gas sensor is configured to provide gas in an environment to interact with the protic group, which causes an output/change in output from the OTFT gas sensor. A measured response indicates presence/concentration of a particular gas. The sensor is used to measure an ester, e.g. butyl acetate, in gas to determine ripeness of fruit. A method of using the OTFT gas sensor to measure an ester in a gas environment is disclosed.

Logic elements, logic systems and oscillators that include charge-flow transistors

Oscillators that include charge-flow transistor logic elements, each logic element including a charge-flow transistor and a load element, in combination. The charge-flow transistors have TURN-ON times ton and TURN-OFF times toff that can be very different from one another (e.g., ton can range from milliseconds to hundreds of seconds; whereas in the charge-flow transistors shown herein toff is typically less than one microsecond). The magnitude of ton is sensitive to the environment; hence, the period of oscillation can be used as a measure of an environmental condition.

ION-SENSITIVE ELECTROCHEMICAL SENSOR

Electronic sampling circuit

Thin film transistor gas sensor system

A gas sensor system comprising a first top-gate thin film transistor (TFT) gas sensor (100, fig 1) configured to detect a first target gas and comprising a first dielectric layer 109; a second top-gate TFT gas sensor (200, fig 1) configured to detect a second target gas and comprising a second dielectric layer 109, wherein the first dielectric layer and second dielectric layer differ in at least one of thickness and composition. The first and second dielectric layers may each comprise a polymer. These polymers may be different. The first layer may comprise a first material and the second layer may comprise a second material, these two being different. The first material may have greater polarity and polarity Hansen solubility parameter than the second material. The first material may be protic and may be substituted with a hydroxyl or amino group. The second material may be aprotic. The first target gas may be ethylene. The second target gas may be 1-methylcyclopropene (1-MCP). A method ...

METHOD AND DEVICE FOR DETECTION OF HYDROGEN

... 1520456 Semi-conductor devices for detection of hydrogen SEMI-CONDUCTOR SENSORS Inc 8 Sept 1975 [9 Sept 1974] 36892/75 Heading G1N [Also in Division H1] A detector of hydrogen in the form of hydrogen gas, atomic hydrogen or certain gaseous compounds including ammonia comprises a metal-insulatorsemi-conductor device in which the metal is palladium (or an alloy containing at least 20 wt. per cent. palladium), nickel or platinum. The invention employs the fact that hydrogen is absorbed by these metals and will diffuse through them to reach the metal-insulator interface, where it influences the electrical properties of the device; e.g. the threshold voltage of an IGFET or the flat band voltage of an MIS capacitor. Fig. 6 shows one arrangement including the hydrogen-sensitive device 10 partially enclosed by a housing which is optionally surrounded by a heater element 15 to heat the device 10 to a temperature at which reaction time and sensitivity are enhanced. In Fig. 7 a heating resistor 18 ...

IMPEDANCE MEASUREMENT SYSTEM AND METHOD

Impedance measurement system and method.

Impedance measurement system and method.

Impedance measurement system and method.

PROOF OF PROBE MOLECULES, WHICH ARE BOUND FOR ON AN ACTIVE RANGE OF A SENSOR

SIC FIELD-EFFECT TRANSISTOR AND USE OF THE SAME AS GAS SENSOR

[...] USING OF A iONS - [...]fIELD EFFECT - tRANSISTOR FOR PH- [...] G

CARBON NANO-TUBE DEVICE

CORONA AUSTRITTSMESSGERÄT

PROCEDURE FOR THE PRODUCTION OF A MICROCHIP FOR THE DETECTION OF BIOLOGICAL MATERIAL

ARRANGEMENT FOR THE MEASUREMENT OF ION CONCENTRATIONS IN SOLUTIONS

PROCEDURE FOR THE PRODUCTION OF AN INTEGRATED ONE SENSORMATRIXANORDUNG

ELECTRO-CHEMICAL SENSOR

PROCEDURE FOR THE PRODUCTION OF A REFETS OR A CHEMFETS, AS WELL AS THEIR PRODUCTION.

IONDETEKTOR WITH A SELECTIVE ORGANIC DIAPHRAGM.

ION-SENSITIVE DEVICE.

PROCEDURE FOR THE ENCAPSULATION OF ELECTRONIC ELEMENTS.

IMMOBILIZATION OF BIOCHEMICAL SUBSTANCES

BIO SENSOR

ELECTRONIC CIRCUIT, SENSOR ARRANGEMENT AND PROCEDURE FOR PROCESSING A SENSOR SIGNAL

BIO SENSOR DEVICE AND PROCEDURE

BIO SENSOR ALSO ON AN SIGNAL-ACTIVE SURFACE KOVALENT FIXED BIOLOGICAL MATERIAL

ANALYTMESSMETHODE WITH SENSORS DURING THE WET-UP PHASE

PROCEDURE FOR THE PRODUCTION OF MINIATURIZED CHEMO AND BIO SENSOR ELEMENTS WITH ION-SELECTIVE DIAPHRAGM AS WELL AS OF CARRIERS FOR THESE ELEMENTS

REFERENCE ELECTRODE

COMPLETELY MICRO-MANUFACTURED BIO SENSORS AND PROCEDURES FOR THE PRODUCTION AND USE

ANIONENCOMPLEXIERENDE CONNECTIONS, PROCEDURES FOR THE PRODUCTION OF IT, A ION-SELECTIVE DIAPHRAGM AS WELL AS A WITH OF SUCH A CONNECTION OR DIAPHRAGM PROVIDED SENSOR

Chemical varactor-based sensors with non-covalent surface modification of graphene

A medical device which can include a graphene varactor (100). The graphene varactor (100) can include a graphene layer (108a, 108b) and a self-assembled monolayer disposed on an outer surface of the graphene layer through pi-pi stacking interactions. The self- assembled monolayer can provide a Langmuir theta value of at least 0.9. The self-assembled monolayer can include polycyclic aromatic hydrocarbons, tetraphenylporphyrins or derivatives thereof, metallotetraphenylporphyrins, or aromatic cyclodextrins. Corresponding fabrication method and a method of detecting an analyte in a gaseous sample of a patient with the medical device are also disclosed.

NUCLEIC ACID FIELD EFFECT TRANSISTOR

FET TYPE SENSOR, ION DENSITY DETECTING METHOD COMPRISING THIS SENSOR, AND BASE SEQUENCE DETECTING METHOD

TRANSISTOR-BASED BIOSENSORS HAVING GATE ELECTRODES COATED WITH RECEPTOR MOLECULES

Methodology and apparatus for the detection of biological substances

Sampling unit and biosensor

The present invention is characterized by having a first reception unit (16) and a second reception unit (18) that are for receiving sample liquid and are disposed so as to be separate from each other and in that the first reception unit (16) includes an identification substance (22) that binds to a substance to be detected and separates the substance to be detected within the sample liquid from a substance not subject to detection and the second reception unit (18) is connected to a reference electrode (21) via a salt bridge part (25).

Material for establishing solid state contact for ion selective electrodes

Polymerase attachment to a conductive channel

Provided is a device, including a conductive channel and a number of polymerase molecules bound thereto, wherein the number is between one and five and the conductive channel is to detect incorporation of a nucleotide comprising a charge tag into a nascent polynucleotide by the polymerase, and each of the one or more polymerase molecules includes a hexahistidine tag, the conductive channel includes a multivalent nickel-nitrolotriacetic acid complex, and the hexahistidine tag is bound to the multivalent nickel-nitrolotriacetic acid complex. Also provided are a method of attaching a polymerase to a conductive channel of a device and a method of using the device.

BATCH DEPOSITION OF POLYMERIC ION SENSOR MEMBRANES

Anion-complexing compound, method of preparing the same, an ion-selective membrane and a sensor provided with such compound or membrane

A gas sensing system

Transistor-based apparatus and method for molecular detection and field enhancement

SUBSTANCE-SENSITIVE ELECTRICAL STRUCTURES AND METHOD FOR MAKING SAME

CARTRIDGE ARRANGEMENT, FLUID ANALYZER ARRANGEMENT, AND METHODS

A cartridge (26) for analysis of fluid samples useable with an analyzer device includes an arrangement to selectively control fluid flow within the cartridge. One type of cartridge (26) includes a fluid channel (54). A sensor arrangement (56) is oriented within the fluid channel and includes at least one dry-stored sensor and at least one wet-stored sensor. The cartridge may include a first port (66). In some instances, the cartridge can include a second port (70). In some instances, the cartridge can include a third port (78). In some implementations, a cartridge includes a fluid reservoir in fluid communication with a port an the cartridge (68). The fluid reservoir (68) defines a fluid passage and a fluid dispenser actuator. The actuator includes an over-center engageable button depressible to initiate fluid flow from an internal volume in the fluid reservoir and through the fluid passage and through the port into the sensor arrangement an the cartridge. Methods for analyzing, calibrating ...

GAS SENSOR DEVICE

A gas sensor device (10, 32, 48, 62) including a semiconductor substrate (12, 34, 50, 64); one or more catalytic gate-electrodes (14, 44, 58, 70) deposited on a surface of the semiconductor substrate; one or more ohmic contacts (16, 18, 40, 42, 54, 56, 66, 68) deposited on the surface of the semiconductor substrate and a passivation layer (38, 60, 72) deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.

IN-LINE GAS PURITY MONITORING AND CONTROL SYSTEM

Method for supplying a high purity gas product comprising providing a first gas stream including a major component and at least one impurity component, determining the concentration of the at least one impurity component, and comparing the concentration so determined with a reference concentration for that component. When the value of the concentration so determined is less than or equal to the reference concentration, the first gas stream is utilized to provide the high purity gas product. When the value of the concentration so determined is greater than the reference concentration, a second gas stream comprising the major component is provided and the first and second gas streams are mixed to yield a mixed gas stream having a concentration of the at least one impurity component that is less than the reference concentration. The mixed gas stream is utilized to provide the high purity gas product.

METHOD FOR DEPOSITING AN ADHESIVE PVC LAYER ON AN ELECTRODE AND ELECTRODE OBTAINED ACCORDING TO SAID METHOD

L'invention concerne un procédé de dépôt d'une couche adhérente d'un copolymère de PVC sur un substrat, caractérisé en ce qu'il comporte les étapes de: formation, dans un solvant organique, d'un mélange de précurseurs du copolymère comportant du PVC et 0.1 à 2 % en poids d'un organotrialkoxysilane répondant à la formule: H(HN - R1)xHN - R2 - Si - (OR3)3, dans laquelle R1 et R2 sont des groupes alkyles ou aromatiques intercalaires, R3 est un groupe alkyle, les trois substituants R3 pouvant ne pas être les mêmes, et x est compris entre 0 et 2; dépôt d'une couche de ce mélange sur le substrat; séchage du mélange pour faire évaporer le solvant; et chauffage de l'ensemble ainsi obtenu à une température comprise entre 70 et 170 ~C, durant un temps compris respectivement entre 3 heures et 5 minutes.

MONITORING OF GAS SENSORS

... a monitor is disclosed for monitoring an atmosphere for the presence of a target gas, the monitor comprising: 1. an electrochemical gas sensor (11) having a working (sensing) electrode (11a) and a counter electrode (11b), the sensor providing a current between the electrodes that is indicative of the amount of target gas in the atmosphere; 2. an operational amplifier (12) connected between the sensor electrodes to generate an output signal according to the current flowing between the terminals, whereby the output signal is indicative of the amount of target gas in the atmosphere, 3. a detector (20,22) for detecting when the current flowing between the sensor electrodes exceeds a predetermined threshold; and 4. a circuit (24) that restricts the potential difference between the sensor electrodes when the current between the terminals exceeds the predetermined threshold by supplying additional current to or removing current from the working sensor electrode (11a).

NANOSENSORS

... ²²²Electrical devices comprised of nanowires are described, along with methods of ²their manufacture and use. The nanowires can be nanotubes and nanowires. The ²surface of the nanowires may be selectively functionalized. Nanodetector ²devices are described.² ...

HYDROGEN ADSORPTION DEVICE FOR DETECTION OF HYDROGEN

A method of and an apparatus for the detection of hydrogen is described. The method and apparatus employ a semiconductor, a metal electrode and an insulator situated between the semiconductor and the electrode. The metal electrode is made of palladium, nickel, platinum or an alloy containing at least twenty percent (20%) palladium. In one embodiment the apparatus is a field effect transistor. In another it is a capacitor. A heater is also provided for heating the apparatus for improving its response time.

SYSTEM EMPLOYING A BIOSENSOR TO MONITOR A CHARACTERISTIC OF A SELECT COMPONENT IN A MEDIUM

A SYSTEM EMPLOYING A BIOSENSOR TO MONITOR A CHARACTERISTIC OF A SELECT COMPONENT IN A MEDIUM A measuring instrument is disclosed having a reversibly selective binding protein immobilized upon the insulated-gate region of a field-effect transistor located on a sensor With the sensor immersed in solution, the proteinbinds a select component of the solution to the gate producing an effect on a current flowing through the IGFET. A plurality of such binding protein-IGFET arrangements can be provided on the same sensor, including the same binding proteins having different binding coefficients KD or an array of proteins with different ligand specificity and/or affinity. Analysis of the IGFET's response to binding by a microprocessor allows, for example, the concentration of the component in solution to be determined. With a plurality of different binding proteins employed, the concentration of different components can be determined. Similarly, with binding proteins employed having different binding ...

METHODOLOGY AND APPARATUS FOR THE DETECTION OF BIOLOGICAL SUBSTANCES

A methodology and an apparatus for the detection of biological substances employing the integration of multiple functions and units designed into and implemented in the form of an individual silicon ship, described as a sensor unit. The deployment of a set of sensor units as a group results in a distributed detecting, discriminating, and alerting network. Distribution of the sensor units facilitates the on-the-spot detection of different biological substances such as viruses, bacteria, spores, allergens, and other toxins that can be suspended in multiple media (air, liquid, blood, etc.). Besides detection/sensing, the individual sensor units perform: data acquisition, data development, data storage, statistical analysis, and data transmission. A set of sensor units deployed in proximity to each ot6her can be designated as a group and act as a distributed sensing network with consistent and reliable data flow to a router and further to a central computer for extended data synthesis, analysis ...

HANDHELD SENSING APPARATUS

A vapor or analyte sensing device that is sufficiently small and lightweight to be handheld, and also modular so as to allow the device to be conveniently adapted for use in sensing the presence and concentration of a wide variety of specified vapors or analytes. The device provides these benefits using a sensor module that incorporates a sample chamber (810) and a plurality of sensors (820) located on a chip or board (830) releasably carried within or adjacent to the sample chamber. Optionally, the sensor module (150c) can be configured to be releasably plugged into a receptacle formed in the sensing device. Vapors or analytes are directed to pass through the sample chamber with cover (832), whereupon the sensors (820) provide a distinct combination of electrical signals in response to each vapor/analyte. The sensors of the sensor module can take the form of chemically sensitive resistors having electrical resistances which vary according to the adjacent vapor/analyte concentration/identity ...

METHOD OF MARKING A PRODUCT, MARKED PRODUCT RESULTING THEREOF, AND METHOD OF IDENTIFYING SAME

A method and means for identifying the authenticity and the genuine nature of a solid or liquid bulk material, by incorporating a marking composition containing at least one trace ion into the said bulk material, whereby the to~tal concentration of the incorporated trace ions in the market bulk material is chosen to be lower than the corresponding con~centration of the same ions in standard sea water. The authen~ticity and the genuine nature or the adulteration level of the marked bulk material can be tested in-the-field using electro~chemical sensors, and confirmed in the laboratory using a method such as atomic absorption spectroscopy, ion chromatography or mass spectrometry.

ION-SENSITIVE ELECTROCHEMICAL SENSOR AND METHOD OF DETERMINING ION CONCENTRATIONS

IMPROVEMENTS IN OR RELATING TO PACKAGING FOR INTEGRATED CIRCUITS

An assay device (10) is provided. The device comprises an integrated circuit (IC) (16) comprising a plurality of ISFETs (18); an over- moulded layer (17) which partially covers the IC, such that the plurality of ISFETs remain uncovered; and a film (20) provided across substantially the entire IC. The film acts as a passivation and/or sensing layer for each of the ISFETs. In addition, the film acts as a barrier layer to encase the over-moulded layer.

AMBIENT SENSING DEVICES WITH ISOLATION

DEVICES, SYSTEMS, AND METHODS FOR THE DETECTION OF ANALYTES

Disclosed are devices, systems, and methods for the rapid and accurate detection of analytes, including Salmonella.

AN APPARATUS COMPRISING A SENSOR ARRANGEMENT AND ASSOCIATED FABRICATION METHODS

An apparatus comprising: a plurality of sensors (501) arranged in an array (500), each sensor having a source electrode (504), a drain electrode (503), a gate electrode (505) and a channel, wherein the source electrode and drain electrode are elongate and the channel has a channel width defined by the longitudinal extent of the source and/or drain electrode and a channel length defined by the separation between the source and drain electrodes; a common conductive or semiconductive layer (506), which may be made of graphene, comprising the channels of the sensors (501) and arranged to extend over the plurality of sensors of the array and configured to be in electrical contact with at least the source electrode and the drain electrode of each sensor; and wherein the source electrode or drain electrode of each sensor forms a substantially continuous sensor perimeter at least along the channel width, which substantially encloses the other electrode of each sensor to inhibit the flow of charge ...

CHEMICAL SENSING DEVICE

An apparatus comprises a transducer having a first output signal and arranged to receive an electrical input. The transducer switches the first output signal between an ON and OFF state. The apparatus comprises a chemical sensing surface coupled to the transducer arranged to receive a chemical input.A signal generator oscillates one or more of said inputs to vary the switching point of the transducer. The oscillating input may be the chemical input and/or the electrical input. The output signal may be a pulse whose period ON or OFF is determined by the oscillating input modulated by the chemical input.

PH SENSOR WITH BONDING AGENT DISPOSED IN A PATTERN

Embodiments described herein provide for a pH sensor that comprises a substrate and an ion sensitive field effect transistor (ISFET) die. The ISFET die includes an ion sensing part that is configured to be exposed to a medium such that it outputs a signal related to the pH level of the medium. The ISFET die is bonded to the substrate with at least one composition of bonding agent material disposed between the ISFET die and the substrate. One or more strips of the at least one composition of bonding agent material is disposed between the substrate and the ISFET die in a first pattern.

APPARATUS AMD METHOD FOR COMPENSATING PH MEASUREMENT ERRORS DUE TO PRESSURE AND PHYSICAL STRESSES

A pH sensing apparatus includes an ion-sensing cell that includes a first half-cell including a first Ion-Sensitive Field Effect Transistor (ISFET) exposed to a surrounding solution; and a second reference half-cell exposed to the surrounding solution. The pH sensing apparatus further includes a pressure sensitivity compensation loop including a Non Ion-Sensitive Field Effect Transistor (NISFET). The pH sensing apparatus is configured to compensate for at least one of pressure and physical stresses using signals from the ion-sensing cell and feedback from the pressure sensitivity compensation loop. The pH sensing cell further includes a processing device configured to calculate a final pH reading compensated to minimize the at least one of pressure and physical stresses.

METHOD AND DEVICE FOR BIOCHEMICAL SENSING

... 2121797 9308464 PCTABS00021 A method and application for detecting and measuring the presence of a binding target material (64) employs a semiconductor device (50) having a receptor-covered surface (90) topgate (60), separated by a dielectric layer (58) from a substrate (56). Receptors (66) attached to this surface exhibit a chemical selectivity function. Binding occurs in a test solution (52), with charge associated with the target material (64) modulating at least one device characteristic. According to the present invention, measurement may occur under dry conditions, at a time and location different from when binding occurred, thus substantially eliminating problems associated with ionic shielding and reference electrodes, so prevalent with prior art wet measurement techniques. Preferably the device (50) includes backgate (62) to which a bias may be applied to restore the device's pre-binding characteristics. Measurement of the restorative backgate bias provides a signal indicating ...

RADIATION-SENSITIVE COMPOSITION AND USE THEREOF IN THE PREPARATION OF ELECTROCHEMICAL ION SENSORS

RADIATION-SENSITIVE COMPOSITION AND USE THEREOF IN THE PREPARATION OF ELECTROCHEMICAL ION SENSORS Radiation-sensitive compositions are disclosed of a type suitable for preparing ion sensitive membranes for electrochemical ion sensors. The compositions are comprised of a radiation-sensitive polymer containing radiation-sensitive recurring units having an ionophore group and recurring units having a crosslinking group. In preparing a membrane the radiation-sensitive composition is coated onto a sensor, exposed to activating radiation to produce crosslinking in areas where the membrane structure is desired, and removed in any remaining non-exposed areas.

REFERENCE ELECTRODE FOR CHEMICAL SENSORS

O.Z. 0050/41645 The invention relates to a reference electrode for chemical sensors based on ionselective field-effect transistors (CHEMFETs) in an electrolyte/insulator/semiconductor system. The reference electrode is essentially composed of a polyglutamatecoated insulator/semiconductor substrate or of a polyglutamate-coated phthalocyaninato-polysiloxane polymer film applied to an insulator/semiconductor substrate.

Array configuration and readout scheme

The described embodiments may provide a chemical detection circuit that may comprise a plurality of first output circuits at a first side and a plurality of second output circuits at a second side of the chemical detection circuit. The chemical detection circuit may further comprise a plurality of tiles of pixels each placed between respective pairs of first and second output circuits. Each tile may include four quadrants of pixels. Each quadrant may have columns with designated first columns interleaved with second columns. Each first column may be coupled to a respective first output circuit in first and second quadrants, and to a respective second output circuit in third and fourth quadrants. Each second column may be coupled to a respective second output circuit in first and second quadrants, and to a respective first output circuit in third and fourth quadrants.

Microanalysis methods and systems using field effect transistor

Provided is a microanalysis method and system using a Field Effect Transistor (FET). The microanalysis method includes a channel region having a receptor molecule fixed; forming a nano-particle conjugate in the channel region by supplying a sample for test and the nano-particle conjugate to the FET; growing a probe material on the channel region; and measuring a current flowing through the channel region, wherein the receptor molecule is a material that is selectively bonded to a target molecule in the sample for test.

Biosensing device

The present invention provides a biosensing device, comprising an input unit, an analysis unit, a process unit, and a set unit for storing resulting data values as the basis for calibrating the biosensing device, to set up the calibration parameters of a strip of the biosensing device.

Ion sensitive sensor with multilayer construction in the sensor region

An ion sensitive sensor having an EIS structure, including: a semiconductor substrate, on which a layer of a substrate oxides is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable, intermediate insulator, which is deposited on the adapting or matching layer; and an ion sensitive, sensor layer, which is applied on the intermediate insulator. The adapting or matching layer differs from the intermediate insulator and the substrate oxide in its chemical composition and/or structure. The adapting or matching layer and the ion sensitive, sensor layer each have an electrical conductivity greater than that of the intermediate insulator. There is an electrically conductive connection between the adapting or matching layer and the ion sensitive, sensor layer.

Method of making an electrically conductive structure, method of making a gas sensor, gas sensor obtained with the method and use of the gas sensor for sensing a gas

A method of making an electrically conductive structure in a surface portion of a dielectric material is disclosed. In one aspect, the method includes creating vacancies at at least part of an exposed surface of the dielectric material by removing atoms from a plurality of molecules of the dielectric material.

Two-Transistor Pixel Array

A two-transistor (2T) pixel comprises a chemically-sensitive transistor (ChemFET) and a selection device which is a non-chemically sensitive transistor. A plurality of the 2T pixels may form an array, having a number of rows and a number of columns. The ChemFET can be configured in a source follower or common source readout mode. Both the ChemFET and the non-chemically sensitive transistor can be NMOS or PMOS device.

Graphene-encapsulated nanoparticle-based biosensor for the selective detection of biomarkers

A field effect transistor (FET) with a source electrode and a drain electrode distanced apart from each other on a semi-conductor substrate, and a gate electrode consisting of a uniform layer of reduced graphene oxide encapsulated semiconductor nanoparticles (rGO-NPs), wherein the gate electrode is disposed between and contacts both the source and drain electrodes. Methods of making and assay methods using the FETs are also disclosed, including methods in which the rGO-NPs are functionalized with binding partners for biomarkers.

Array Column Integrator

Circuits are described for reading a chemically-sensitive field-effect transistor (chemFET) with an improved signal-to-noise ratio. In one embodiment, a device is described that includes a chemFET including a first terminal and a second terminal, and a floating gate coupled to a passivation layer. An integrator circuit is coupled to the second source/drain terminal of the chemFET via a data line. The integrator circuit applies a bias voltage to the data line during a read interval, thereby inducing a current through the chemFET based on a threshold voltage of the chemFET. The integrator circuit then generates an output signal proportional to an integral of the induced current through the chemFET during the read interval.

Dna sequencing employing nanomaterials

Charge transfer doped nanomaterials such as hydrogen terminated diamond, nanotubes, nanowires or similar nanostructures are used to create a highly sensitive pH sensor, or ion sensitive sensor to directly detect the addition of a newly incorporated nucleotide when performing DNA sequencing by synthesis. A single highly integrated chip can be made to sequence many strands of DNA in a massively parallel fashion in a short amount of time with a direct electronic readout that will bring the cost, size, power consumption of sequencing DNA to very attractive and useful levels.

Method of enhanced detection for nanomaterial-based molecular sensors

Sensors based on single-walled carbon nanotubes and graphene which demonstrate extreme sensitivity as reflected in their electrical conductivity to gaseous molecules, such as NO, NO 2 and NH 3 , when exposed to in situ ultraviolet (UV) illumination during measurement of the analytes are disclosed. The sensors are capable of detection limits of NO down to almost 150 parts-per-quadrillion (“ppq”), detection limits of NO 2 to 2 parts-per-trillion (“ppt”), and detection limits of NH 3 of 33 ppt.

Methods and apparatus for high-speed operation of a chemically-sensitive sensor array

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

Microwell structures for chemically-sensitive sensor arrays

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

Active chemically-sensitive sensors with source follower amplifier

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

Graphene sensor

A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.

Chemically-sensitive field effect transistor based pixel array with protection diodes

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

Methods and apparatus for high speed operation of a chemically-sensitive sensor array

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

Diagnosing, prognosing and monitoring multiple sclerosis

The present invention provides a system and method for diagnosing, monitoring or prognosing Multiple Sclerosis at different stages as well as affording the prediction of disease activity and response to a treatment regimen, using at least one sensor comprising carbon nanotubes or metal nanoparticles, each coated with various organic coatings in conjunction with a pattern recognition algorithm.

Microwell structures for chemically-sensitive sensor arrays

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

NANO-ELECTRONIC SENSORS FOR CHEMICAL AND BIOLOGICAL ANALYTES, INCLUDING CAPACITANCE AND BIO-MEMBRANE DEVICES

Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes inorganic gases, organic vapors, biomolecules, viruses and the like. A number of embodiments of capacitive sensors having alternative architectures are described. Particular examples include integrated cell membranes and membrane-like structures in nanoelectronic sensors. 1. A sensor , comprising:a substrate;a conductive base disposed adjacent the substrate;a dielectric material covering at least a region of the conductive base;one or more nanostructures disposed adjacent the dielectric material and capacitively coupled to the conductive base; anda top lead electrically communicating to the one or more nanostructures.2. The sensor of claim 1 , wherein the one or more nanostructures comprises a network of carbon nanotubes.3. The sensor of further comprising a functionalization material disposed adjacent the carbon nanotubes.4. A sensor claim 2 , comprising:a substrate;a spaced-apart pair including a first and second conductive lead disposed adjacent the substrate;a dielectric material covering at least a region of at least one conductive lead; andone or more nanostructures disposed adjacent the dielectric material and capacitively coupled to at least one conductive lead.5. The sensor of claim 4 , wherein the one or more nanostructures comprises an electrically-continuous network including a plurality of carbon nanotubes spanning to cover at least a region of each conductive lead which separated from each lead by the dielectric material claim 4 , and wherein neither conductive lead is in contact with the network of carbon nanotubes.6. The sensor of claim 5 , wherein the spaced-apart pair of conductive leads have a characteristic separation gap “g” claim 5 , and wherein the carbon nanotubes have a characteristic length “L” claim 5 , and wherein “L” is significantly greater that “g”.7. The sensor of claim 5 , wherein substantial numbers of nanotubes span the gap so as to have ...

Ion-Selective Ion Concentration Meter

An ion concentration meter measures a concentration of an ion in a solution by exposing both an ISFET gate and a reference electrode within a filtered test area. In preferred embodiments, the test area filters preferred compounds from a solution being tested by occluding an opening to the test area with a species-selective membrane. Contemplated species-selective membranes include silicate membranes, chalcogenide membranes, lanthanum fluoride membranes, and valinomycin membranes.

Method and Apparatus for Identifying Defects in a Chemical Sensor Array

In one implementation, a method for operating an apparatus is described. The method includes applying a bias voltage to place a transistor of a reference sensor in a known state. The reference sensor is in an array of sensors that further includes a chemical sensor coupled to a reaction region for receiving at least one reactant. The method further includes acquiring an output signal from the reference sensor in response to the applied bias voltage. The method further includes determining a defect associated with the array if the output signal does not correspond to the known state.

DNA-DECORATED GRAPHENE CHEMICAL SENSORS

The present invention provides a broad response single-stranded DNA-graphene chemical sensor device. The present invention also provides methods for improving the ability of graphene to work as a chemical sensor by using single-stranded DNA as a sensitizing agent. 1. A molecular sensor device , comprising:an insulator thin-film disposed directly adjacent to a back-gate substrate;at least one positive electrode disposed directly adjacent to said insulator thin-film, opposite to said back-gate substrate;at least one negative electrode disposed directly adjacent to said insulator thin-film, opposite to said back-gate substrate;clean graphene disposed between, and in electrical communication with, said positive and negative electrodes, wherein the clean graphene is functionalized with a nucleic acid.2. The device of claim 1 , wherein said insulator thin-film has a thickness of from about 10 nm to about 1000 nm claim 1 , covering an area of from about 400 nmto covering the entire substrate.3. The device of claim 1 , wherein said insulator thin-film is comprised of silicon dioxide claim 1 , silicon oxide claim 1 , hafnium oxide claim 1 , aluminum oxide claim 1 , titanium dioxide claim 1 , titanium oxide claim 1 , or insulating polymer.4. The device of claim 1 , wherein said back-gate substrate has a thickness of from about 0.01 mm to about 1 mm claim 1 , and covers an area of from about 10 mmto about 1000 mm.5. The device of claim 1 , wherein said back-gate substrate is silicon claim 1 , doped silicon claim 1 , gallium arsenide claim 1 , gold claim 1 , aluminum claim 1 , or conducting polymer.6. The device of claim 1 , wherein said substrate is p-doped or n-doped with 300 nm thermal oxide.7. The device of claim 1 , wherein said electrodes are comprised of aluminum claim 1 , chrome claim 1 , gold palladium claim 1 , platinum claim 1 , titanium claim 1 , titanium nitride claim 1 , copper claim 1 , graphene claim 1 , or conducting polymer.8. The device of claim 1 , wherein ...

Optoelectrical vapor sensing

A chemical sensor can comprise a nanofiber mass of p-type nanofibers having a HOMO level greater than −5.0 eV. Additionally, the chemical sensor can comprise oxygen in contact with the p-type nanofibers. Further, the chemical sensor can comprise a pair of electrodes in electrical contact across the nanofiber mass, where the p-type nanofibers conduct an electric current that decreases upon contact with an amine compound.

METHOD OF FORMING NANOGAP PATTERN, BIOSENSOR HAVING THE NANOGAP PATTERN, AND METHOD OF MANUFACTURING THE BIOSENSOR

Provided is a method of forming a nanogap pattern of a biosensor. First, an oxide layer is formed on a substrate and a first nitride layer is formed on the oxide layer. The first nitride layer is partially etched to form a first nitride layer pattern having a first gap that gradually narrows from a top portion to a bottom portion thereof and exposes the oxide layer. A second nitride layer is formed along the first nitride layer and along sidewalls and a bottom surface of the first gap. The second nitride layer is etched to form a second nitride layer pattern having a second gap narrower than the first gap on the sidewalls of the first gap. The oxide layer is etched by using the second nitride layer pattern as an etching mask to form an oxide layer pattern having a third gap, and thus, the nanogap pattern is completed. 1. A method of forming a nanogap pattern , the method comprising:forming an oxide layer on a substrate;forming a first nitride layer on the oxide layer;partially etching the first nitride layer to form a first nitride layer pattern having a first gap that exposes the oxide layer and gradually narrows from a top portion to a bottom portion thereof;forming a second nitride layer along the first nitride layer and along sidewalls and a bottom surface of the first gap; andetching the second nitride layer to form a second nitride layer pattern having a second gap narrower than the first gap on the sidewalls of the first gap.2. The method of claim 1 , further comprising etching the oxide layer by using the second nitride layer pattern as an etching mask to form an oxide layer pattern having a third gap.3. The method of claim 2 , wherein the first gap has a micron size claim 2 , and the second gap and the third gap each have a nano size.4. The method of claim 1 , wherein an inclination angle of the first gap is in a range of 15 degrees to 75 degrees.5. A biosensor comprising:a substrate;a nanogap pattern including an oxide layer pattern disposed on the ...

SYSTEMS AND METHODS FOR SIGNAL AMPLIFICATION WITH A DUAL-GATE BIO FIELD EFFECT TRANSISTOR

The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity. An amplification factor of the BioFET device may be provided by a difference in capacitances associated with the gate structure on the first surface and with the interface layer formed on the second surface. 1. A semiconductor device , comprising:a substrate having a source region, a channel region, and a drain region;a first gate structure disposed on a first surface of the substrate, the first gate structure including a conductive layer and a first dielectric layer; anda second gate structure disposed on a second surface of the substrate, the second gate structure including a second dielectric layer, wherein the source region, the channel, region, and the drain region extend from the first surface to the second surface.2. The semiconductor device of claim 1 , wherein a capacitance associated with the first gate structure is greater than a capacitance associated with the second gate structure.3. The semiconductor device of claim 1 , wherein the second gate structure further comprises a receptor material layer.4. The semiconductor device of claim 1 , wherein an effective thickness of the first dielectric layer is smaller than an effective thickness of the second dielectric layer.5. The semiconductor device of claim 1 , wherein the first dielectric layer is formed from a first material and the second dielectric layer is formed from a second material.6. The semiconductor device of claim 1 , ...

DEVICES AND METHODS FOR THE RAPID AND ACCURATE DETECTION OF ANALYTES

Disclosed are field effect transistor-based (FET-based) sensors for the rapid and accurate detection of analytes both in vivo and in vitro. The FET-based sensors can include a substrate, a channel disposed on the substrate, a source electrode and a drain electrode electrically connected to the channel, and a recognition element for an analyte of interest immobilized on the surface of the channel via a linking group. The distance between the recognition element and the channel can be configured such that association of the analyte of interest with the recognition element induces a change in the electrical properties of the channel. In this way, an analyte of interest can be detected by measuring a change in an electrical property of the channel. Also provided are devices, including probes and multi-well plates, incorporating the FET-based sensors. 1. A sensor comprising:a) a substrate;b) a channel disposed on the substrate, wherein the channel is substantially impermeable to ions under physiological conditions;c) a source electrode and a drain electrode electrically connected to the channel, wherein the source electrode and the drain electrode are formed to be separate such that the channel forms a path for current flow between the source electrode and the drain electrode; andd) a recognition element for an analyte of interest immobilized on the surface of the channel;wherein the distance between the recognition element and the channel is configured such that association of the analyte of interest with the recognition element induces a change in the electrical properties of the channel.2. The sensor of claim 1 , wherein the substrate is selected from the group consisting of Si claim 1 , SiC claim 1 , AlO claim 1 , Group III-nitrides claim 1 , ZnO claim 1 , MgZnO claim 1 , glass claim 1 , diamond claim 1 , and combinations thereof3. The sensor of claim 2 , wherein the channel comprises a Group III-nitride heterojunction claim 2 ,wherein the Group III-nitride ...

METHODS AND APPARATUS FOR MEASURING ANALYTES

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. 1. An apparatus comprising:an array of sensors, a sensor of the array of sensors including an electrode structure;a structure defining an array of reaction chambers, a reaction chamber of the array of reaction chambers having a sidewall surface and having a lower surface overlying the electrode structure of the sensor; anda buffering inhibitor disposed on at least one of the sidewall surface or the lower surface of the reaction chamber.2. The apparatus of claim 1 , wherein the buffering inhibitor includes a phospholipid.3. The apparatus of claim 2 , wherein the phospholipid includes phosphatidylcholine claim 2 , phosphatidylethanolamine claim 2 , phosphatidylglycerol claim 2 , or phosphatidylserine.4. The apparatus of claim 1 , wherein the buffering inhibitor includes a sulfonic acid surfactant.5. The apparatus of claim 4 , wherein the sulfonic acid surfactant includes poly(ethylene glycol) 4-nonylphenyl 3-sulfopropyl ether (PNSE) claim 4 , poly(styrenesulfonic acid) claim 4 , or a salt thereof.6. The apparatus of claim 1 , wherein the buffering inhibitor includes poly(diallydimethylammonium) claim 1 , tetramethyl ammonium claim 1 , or a salt thereof.7. The apparatus of claim 1 , wherein the buffering inhibitor is covalently bound to the at least one of the sidewall surface or the lower surface of the reaction chamber.8. The apparatus of claim 1 , wherein the buffering inhibitor is non-covalently bound to the at least one of the sidewall surface or the lower surface of the reaction chamber.9. The apparatus of claim 1 , wherein the sensor includes an ion sensitive field effect transistor.10. The apparatus of claim 9 , wherein the ion sensitive field effect ...

Methods and apparatus for measuring analytes

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

NANOGRID CHANNEL FIN-FET TRANSISTOR AND BIOSENSOR

A transistor includes a source region, a drain region, and a nanogrid channel connecting the source and drain regions. The nanogrid channel includes first and second vertical channel regions connecting the source and drain regions. The first and second vertical channel regions have a space therebetween. A cross member extends from the first vertical channel region into the space. 1. A transistor , comprising:a source region and a drain region located over a substrate; and first and second vertical channel regions connecting said source and drain regions and having a space therebetween; and', 'a cross member that extends from said first vertical channel region into said space., 'a nanogrid channel connecting said source and drain regions, said nanogrid channel including2. The transistor of claim 1 , wherein said cross member physically connects said first and second vertical channel regions.3. The transistor of claim 2 , wherein said cross member includes a low conductivity region that reduces conduction between said first and second vertical channel regions.4. The transistor of claim 2 , wherein said cross member includes two PN junctions that share a common doped region claim 2 , thereby substantially preventing conduction between said first and second vertical channel regions.5. The transistor of claim 1 , further comprising a dielectric layer underlying said first and second vertical channel regions claim 1 , wherein said dielectric layer is removed from under a portion of said first and second channel regions.6. The transistor of claim 1 , further comprising a biasing electrode proximate said nanogrid channel configured to control an operating characteristic of said nanogrid channel.7. The transistor of claim 1 , further comprising a sensitizing layer located on said nanogrid channel claim 1 , said layer being configured to interact with a target species in contact with said nanogrid channel thereby changing an electrical parameter of said transistor.8. The ...

Two-Dimensional Electron Gas (2DEG)-Based Chemical Sensors

Sensors for sensing/measuring one or more analytes in a chemical environment. Each sensor is based on a semiconductor structure having an interfacial region containing a two-dimensional electron gas (2DEG). A catalyst reactive to the analyte(s) is in contact with the semiconductor structure. Particles stripped from the analyte(s) by the catalyst passivate the surface of the semiconductor structure at the interface between the catalyst and the structure, thereby causing the charge density in the 2DEG proximate the catalyst to change. When this basic structure is incorporated into an electronic device, such as a high-electron-mobility transistor (HEMT) or a Schottky diode, the change in charge density manifests into a change in an electrical response of the device. For example, in an HEMT, the change in charge density manifests as a change in current through the transistor, and, in a Schottky diode, the change in charge density manifests as a change in capacitance.

FIN-FET SENSOR WITH IMPROVED SENSITIVITY AND SPECIFICITY

The claimed invention is directed to a fmFET biosensor with improved sensitivity and selectivity. Embodiments of the invention are also directed to finFET biosensor arrays, methods for operating fmFET biosensors with improved sensitivity and selectivity, and methods of operating finFET biosensor arrays. 1. A finFET biosensor , comprising:a semiconductor layer on a silicon-on-insulator (SOI) substrate;a transistor source;a transistor drain;one or more finFET nanochannels formed in said semiconductor layer, wherein said nanochannels connect said transistor source and said transistor drain;a gate dielectric covering a portion of said one or more nanochannels;a sample channel; anda sensor region further comprising a sensor molecule, wherein said sensor molecule is coupled to said gate dielectric, and further wherein the sensor region is located within the sample channel.2. The finFET biosensor of further comprising a layer of anti-adhesion protective molecules that coat the surface of said sample channel outside of said sensor region.3. The finFET biosensor of where said layer of anti-adhesion protective molecules is composed of polyelthylene glocol (PEG) terminated self assembled monolayers claim 2 , benzene terminated self assembled monolayers claim 2 , fluorocarbon molecules claim 2 , or a thin layer of resists such as poly(methyl methacrylate) (PMMA) or S1813.4. The finFET biosensor of where said sensor molecule is an antibody claim 1 , an antigen claim 1 , a protein claim 1 , a receptor claim 1 , an aptamer claim 1 , a peptide claim 1 , a DNA strand claim 1 , or an enzyme.5. The finFET biosensor of where said sensor molecule is an antibody.6. The finFET biosensor of where said sensor molecule is an antigen.7. The finFET biosensor of further comprising a biasing electrode.89.-. (canceled)10. The finFET biosensor of where said finFET is a nmos or pmos enhancement mode transistor.1112-. (canceled)13. The finFET biosensor of where said finFET is a nmos or pmos ...

METHODS FOR MANUFACTURING HIGH CAPACITANCE MICROWELL STRUCTURES OF CHEMICALLY-SENSITIVE SENSORS

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. 1. A method of manufacturing a sensor , the method comprising:forming an array of chemically-sensitive field effect transistors, each chemically-sensitive field effect transistor in the array having a floating gate structure including an upper surface;depositing a dielectric layer over the upper surfaces of the floating gate structures of the chemically-sensitive field effect transistor in the array;etching the dielectric layer to define cavities extending to the upper surfaces of the floating gate structures;forming an electrically conductive metal layer on the upper surfaces of the floating gate structures and lining sidewalls of the cavities; anddepositing a passivation layer over the electrically conductive metal layer within the cavities.2. The method of claim 1 , wherein the dielectric layer includes at least one of silicon oxide claim 1 , silicon nitride and silicon oxynitride.3. The method of claim 1 , wherein the passivation layer includes tantalum oxide.4. The method of claim 1 , wherein the passivation layer is a metal oxide or metal nitride selected from one or more of the group of AlO claim 1 , TaO claim 1 , HfO claim 1 , WO.5. The method of claim 1 , wherein depositing the passivation layer includes depositing AlO claim 1 , and depositing TaOover the deposited AlO.6. The method of claim 1 , wherein the chemically-sensitive field effect transistor in the array provide signals indicating an ion-concentration in an analyte solution coupled to the floating gates.7. The method of claim 1 , further comprising:forming the electrically conductive metal layer on upper surfaces of the dielectric layer between the cavities; andremoving the electrically ...

High-Resolution Biosensor

A high-resolution biosensor for analysis of biomolecules is provided. The high-resolution biosensor comprises a functional unit comprising a conducting material with an atomic-scale thickness and a micro-nano fluidic system unit. The functional unit is capable of achieving a resolution required to detect a characteristic of individual biomolecule, and the micro-nano fluidic system unit is capable of controlling the movement and conformation of the biomolecule investigated. The functional unit comprises a first insulating layer, conducting functional layer, a second insulating layer, and a nanopore extending through the full thickness of the functional unit. The micro-nano fluidic system unit comprises a first electrophoresis electrode or micropump, a first fluidic reservoir, a second fluidic reservoir, a second electrophoresis electrode or micropump, and micro-nanometer separation channels. The nanopore connects to the micro-nanometer separation channels. Interactions between the biomolecule and conducting functional layer occur as the biomolecule translocates through the nanopore of the functional unit. 118-. (canceled)19. A high-resolution biosensor , comprising: a first insulating layer,', 'a second insulating layer,', 'a functional layer sandwiched between the first insulating layer and the second insulating layer, and', 'a nanopore formed in and extended through the first insulating layer, the functional layer and the second insulating layer; and, 'a signal detection unit comprising a functional unit, the functional unit comprising a first fluidic reservoir formed at a first end of the third insulating layer;', 'a second fluidic reservoir formed at a second end of the third insulating layer opposite to the first end,', 'a first micro-nanometer separation channel connecting to the first fluidic reservoir, the first micro-nanometer separation channel configured to fluidically connect the first fluidic reservoir to a first end of nanopore, and', 'a second micro- ...

METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in the concentration of inorganic pyrophosphate (PPi), hydrogen ions, and nucleotide triphosphates. 123-. (canceled)24. An apparatus comprising:a substrate including an array of sensors;an array of wells disposed over the substrate, a well of the array of wells corresponding to a sensor of the array of sensors; anda cover disposed over the array of wells and defining a flow volume between the array of wells and the cover, the cover defining a fluid inlet and a fluid outlet in fluid communication with the flow volume, the cover including a non-flat wall defining a concave boundary of the flow volume, the non-flat wall having greater eccentricity at a first position in proximity to the fluid inlet than at a second position further from the fluid inlet.25. The apparatus of claim 24 , wherein the sensor is a field effect transistor.26. The apparatus of claim 25 , wherein the field effect transistor is an ion sensitive field effect transistor.27. The apparatus of claim 24 , wherein the fluid inlet corresponds with a first corner of the array of wells and the fluid outlet corresponds with a second corner of the array of wells.28. The apparatus of claim 24 , wherein the cover further comprises flow disruptors extending into the flow volume.29. The apparatus of claim 24 ...

GRAPHENE SENSOR

A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel. 1. A biosensor , comprising:a fluid channel defined in a substrate, the fluid channel having a first end and a second end so as to define a fluid flow path;a first dielectric layer disposed on the substrate and over the fluid channel, wherein a bottom surface of the first dielectric layer is configured to come into physical contact with a DNA containing fluid disposed within the fluid channel;a graphene layer disposed on the first dielectric layer;a second dielectric layer disposed on the graphene layer;a source region disposed on the first dielectric layer; anda drain region disposed on the first dielectric layer;wherein a transistor defined by the source and drain regions is configured to detect a resistance of a single strand DNA contained within the fluid, coming into contact therewith.2. The biosensor of claim 1 , wherein the second dielectric layer has a greater thickness than the first dielectric layer.3. A biosensor array claim 1 , comprising:a substrate;a plurality of fluid channels defined in the substrate, each fluid channel having a first end and a second end so as to define a fluid flow path; anda plurality of transistor devices formed over each of the fluid channels, each transistor device comprising a first dielectric layer disposed on the substrate and over the fluid channel, wherein a bottom surface of the first dielectric layer is configured to come into physical contact with a DNA containing fluid disposed within the fluid channel, a graphene layer disposed on the first dielectric ...

Sensor for sensing the presence of at least one fluidum

A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG.

MOLECULE SENSOR DEVICE

A molecule sensor included in a molecule sensor device has a semiconductor substrate, a bottom gate, a source portion, a drain portion, and a nano-scale semiconductor wire. The bottom gate is for example a poly-silicon layer formed on the semiconductor substrate and electrically insulated from the semiconductor substrate. The source portion is formed on the semiconductor substrate and insulated from the semiconductor substrate. The drain portion is formed on the semiconductor substrate and insulated from the semiconductor substrate. The nano-scale semiconductor wire is connected between the source portion and the drain portion, formed on the bottom gate, insulated from the bottom gate, and has a decoration layer thereon for capturing a molecular. The source portion, drain portion, and nano-wire semiconductor wire are for example another poly-silicon layer. The bottom gate receives a specified voltage to change an amount of surface charge carriers of the nano-scale semiconductor wire. 1. A molecule sensor device , comprising: a semiconductor substrate;', 'a bottom gate, being a single-crystal silicon layer, a poly-silicon layer, or a metal layer formed on the semiconductor substrate and electrically insulated from the semiconductor substrate;', 'at least one source portion, formed on the semiconductor substrate and electrically insulated from the semiconductor substrate;', 'at least one drain portion, formed on the semiconductor substrate and electrically insulated from the semiconductor substrate; and', 'at least one nano-scale semiconductor wire, connected between the source portion and the drain portion, formed on the bottom gate, electrically insulated from the bottom gate, and having a decoration layer thereon for capturing at least one molecule;', 'wherein the source portion, the drain portion and the nano-scale semiconductor wire are another single-crystal silicon layer or poly-silicon layer, and the bottom gate receives a specified voltage to change an amount ...

METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. 1. A chemical detection device , comprising:a substrate of a first semiconductor type;a column of chemical detection pixels, each chemical detection pixel including:a chemically-sensitive transistor formed in the substrate, each chemically-sensitive transistor having a first terminal and a second terminal; anda first switch formed in the substrate; and a first operational amplifier formed in the substrate coupled to a supply voltage, the first operational amplifier having a first input and a first output, the first input being coupled to the first terminal of the chemically-sensitive transistor of each chemical detection pixel of the column via the first switch of the respective pixel;', 'a second operational amplifier formed in the substrate coupled to the supply voltage, the second operational amplifier having a second input and a second output, the second output coupled to the second terminal of the chemically-sensitive transistor of each chemical detection pixel of the column;', 'a first transistor having first and second terminals coupled to the first output and second input respectively; and', 'a ...

BIOSENSORS INTEGRATED WITH A MICROFLUIDIC STRUCTURE

A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers. 1. A biosensor , comprising:a gate or electrode in a first layer;a trench in a second layer;a first metal layer in a first portion of the trench that is in electrical contact with the gate or the electrode; anda second metal layer formed over the first portion of the trench and that is in electrical contact with the first metal layer,wherein the first metal layer and the second metal layer surround the first portion of the trench and form at least a portion of a microfluidic channel for the biosensor.2. The biosensor of claim 1 , wherein:the first metal layer and the second metal layer are in electrical contact with the gate or the electrode in a first area of a wafer of the biosensor.3. The biosensor of claim 2 , further comprising:a second gate or electrode in the first layer;a second trench filled with a material in the second layer; anda third metal layer in a second portion of the trench that is in electrical contact with the second gate or the electrode.4. The biosensor of claim 3 , wherein the third metal layer is in electrical contact with the second gate or the electrode in a second area of a wafer of the biosensor.5. The biosensor of claim 4 , wherein ...

Nanochannel-based sensor system for use in detecting chemical or biological species

A sensor system for detecting a chemical or biological species includes a sensing element and a bias and measurement circuit. The sensing element includes nanochannels having an outer surface functionalized for interaction with the species to create a surface potential, and each having a sufficiently small cross section to exhibit a shift of differential conductance into a negative bias operating region by a shift amount dependent on the surface potential. The bias and measurement circuit applies a bias voltage across two ends of the nanochannels sufficiently negative to achieve a desired dependence of the differential conductance on the surface potential. The dependence has a steeply sloped region of high amplification substantially greater than a reference amplification at a zero-bias condition, thus achieving relatively high signal-to-noise ratio. The bias and measurement circuit converts the measured differential conductance into a signal indicative of presence or activity of the species.

SENSING PLATFORM FOR QUANTUM TRANSDUCTION OF CHEMICAL INFORMATION

A system for determining chemistry of a molecule in a high background interfering liquid environment by application of an electronic signal at a biased metal-electrolyte interface is disclosed. One or more of a resonant exchange of energy between one or more electrons exchanged by the metal and the electrolyte and vibrating bonds of a molecular analyte, for example, may be sensed by measuring small signal conductivity of an electrochemical interface. 1. A system for sensing chemical information , the system comprising: a sample acquisition zone;', 'a filtration module operatively coupled to the sample acquisition zone;', 'an immunoseparation module operatively coupled to the filtration module;', 'a tapered micro-chromatogram operatively coupled to the immunoseparation module; and', 'an adsorption pad operatively coupled to the tapered micro-chromatogram; and, 'a fluidic system, comprising a transducing electrode array comprising dielectric thin films deposited on an electrode array; and', 'processing logic operatively coupled to the transducing electrode array., 'a quantum tunneling biosensor interface operatively coupled to the adsorption pad, the quantum tunneling biosensor interface comprising2. A system , comprising:a quantum tunneling biosensor interface;a transducing electrode array comprising dielectric thin films, the dielectric thin films being layered on a metal electrode array, the metal electrode array being mounted on a silicon die; andprocessing logic operatively coupled to the transducing electrode array.3. The system of claim 2 , wherein the processing logic is operatively coupled to the transducing electrode array by through-silicon vias in the silicon die.4. The system of claim 2 , further comprising a modular fluidic system claim 2 , comprising:a sample acquisition zone;a coarse filtration module operatively coupled to the sample acquisition zone;an immunoseparation module operatively coupled to the coarse filtration module;a tapered micro- ...

RELIABLE NANOFET BIOSENSOR PROCESS WITH HIGH-K DIELECTRIC

Provided are semiconductor field effect sensors including a high-k thin film gate dielectric. The semiconductor field effect sensors described herein exhibit high detection sensitivity and enhanced reliability when placed in contact with liquids. Also disclosed are semiconductor field effect sensors having optimized fluid gate electrode voltages and/or back gate electrode voltages for improved detection sensitivity. 2. The sensor of claim 1 , wherein the sensor is electrically stable when the fluid is in contact with the sensing region for a period greater than 1 minute claim 1 , a period greater than 30 minutes claim 1 , a period greater than 1 day claim 1 , a period greater than 1 week claim 1 , or a period greater than 1 month or a period greater than 10 months.3. The sensor of or claim 1 , wherein a leakage current between the source region and the back gate claim 1 , between the drain region and the back gate or between the channel region and the back gate is insufficient to permanently damage the sensor.4. The sensor of claim 1 , wherein a leakage current between the source region and the fluid claim 1 , between the drain region and the fluid or between the channel region and the fluid is insufficient to permanently damage the sensor.5. The sensor of claim 3 , wherein the leakage current is smaller than 1 μA claim 3 , smaller than 0.1 μA claim 3 , or selected over the range of 1 μA to 0.01 μA.6. The sensor of claim 1 , wherein the high-k dielectric layer has a thickness selected over the range of 0.1 nm-10 μm.7. The sensor of claim 1 , wherein the high-k dielectric layer is deposited over the channel region using atomic layer deposition.8. The sensor of claim 1 , wherein the high-k dielectric is selected from the group consisting of AlO claim 1 , HfO claim 1 , ZrO claim 1 , HfSiO claim 1 , ZrSiOand any combination of these.98. The sensor of any of claim 1 , wherein the sensing region further comprises a metal layer positioned over at least a portion of the ...

Ion Sensor

The disclosure describes techniques for determining an ion concentration in a sample. According to these techniques of this disclosure, an ion concentration of a sample is determined based on detecting at least one change in an electrical characteristic of a semiconductor device due to a gate insulation layer of the semiconductor device placed in contact with the sample. 1. An apparatus for determining an ion concentration in a sample , comprising:a semiconductor body;a gate electrode;a gate insulation arranged between the gate electrode and at least a portion of the semiconductor body,wherein the gate insulation comprises at least one ion access area providing access for ions in the sample to the insulating layer.2. The apparatus of claim 1 , further comprising a detection module to detect a change in at least one electrical property of the semiconductor device to determine an ion concentration of the sample.3. The apparatus of claim 1 , wherein the gate insulation is a gate oxide made from silicon oxide.4. The apparatus of claim 1 , wherein the semiconductor body is made from silicon.5. The apparatus of claim 1 , wherein the semiconductor body comprises at least one p-conducting area claim 1 , at least one n-conducting area claim 1 , and at least one p-n-junction between the at least one p-conducting area and the at least on n-conducting area.6. The apparatus of claim 1 , wherein the gate electrode is made from polycrystalline silicon.7. The apparatus of claim 1 , wherein the gate electrode is heatable.8. The apparatus of claim 1 , wherein the at least one ion access area comprises an ion permeable surface.9. The apparatus of claim 1 , wherein the at least one ion access area is an area where the insulating layer is in use in contact with the sample.10. The apparatus of claim 1 , wherein the apparatus comprises a sample cavity for receiving the sample and wherein the at least one ion access area is arranged in the sample cavity.11. The apparatus of claim 1 , ...

FIELD EFFECT TRANSISTOR FOR CHEMICAL SENSING USING GRAPHENE, CHEMICAL SENSOR USING THE TRANSISTOR AND METHOD FOR PRODUCING THE TRANSISTOR

A field effect transistor () for chemical sensing, comprising an electrically conducting and chemically sensitive channel () extending between drain () and source () electrodes. A gate electrode () is separated from the channel () by a gap () through which a chemical to be sensed can reach the channel () which comprises a continuous monocrystalline graphene layer (a) arranged on an electrically insulating graphene layer substrate (). The graphene layer (a) extends between and is electrically connected to the source electrode () and the drain electrode (). The substrate supports the graphene layer, allowing it to stay -dimensional and continuous, and enables it to be provided on a well defined surface, and be produced and added to the transistor as a separate part. This is beneficial for reproducibility and reduces the risk of damage to the graphene layer during production and after. Low detection limits with low variability between individual transistors are also enabled. There is also provided a chemical sensor () using the transistor () and a method for providing the transistor (). 1. A field effect transistor for chemical sensing , comprising a gate electrode , a drain electrode , a source electrode , and an electrically conducting and chemically sensitive channel extending between and being electrically connected to said drain electrode and source electrode , said gate electrode being arranged at a distance from and opposite to said chemically sensitive channel , so that the gate electrode and the chemically sensitive conducting channel are separated by a gap through which a chemical to be sensed is introducible to reach the chemically sensitive channel , wherein the chemically sensitive channel comprises a continuous monocrystalline graphene layer arranged on an electrically insulating graphene layer substrate , the graphene layer extending between , and being electrically connected to , the source electrode and the drain electrode , wherein the chemically ...

Optical biomodule for detection of diseases at an early onset

An optical biomodule for detecting a disease specific biomarker, utilizing an enhanced fluorescence emission (due to integration of one or more three-dimensional (3-D) protruded structures) in a fluidic container, upon chemical binding of a disease specific biomarker binder with its corresponding disease specific biomarker is disclosed. The three-dimensional (3-D) protruded structure can be coupled with a photonic crystal/metamaterial/metamaterial of Epsilon-Near-Zero (ENZ) of a suitable wavelength range. Furthermore, an enhanced fluorescence emission can be modulated by a synthetic Cas13 protein chemically coupled with a CRISPR RNA (crRNA) and a quenched fluorescent reporter. Alternatively, a suitable synthetic substitute of a synthetic Cas13 protein chemically coupled with a CRISPR RNA (crRNA) containing a targeting sequence can also be utilized. 126-. (canceled)27. An optical biomodule comprises: wherein a substrate of the fluidic container comprises one or more materials,', 'wherein the fluidic container comprises a biomarker binder to bind with a biomarker,', 'wherein the biomarker binder comprises a first segment of the biomarker binder, and a second segment of the biomarker binder,', 'wherein the first segment of the biomarker binder is coupled with a first fluorophore,', 'wherein the second segment of the biomarker binder is coupled with a second fluorophore,', 'wherein a distance between the first fluorophore, and the second fluorophore is between 1 nanometer, and 200 nanometers,', 'wherein the first segment of the biomarker binder is chemically coupled with a first section of the biomarker,', 'wherein the second segment of the biomarker binder is chemically coupled with a second section of the biomarker,', 'wherein the fluidic container comprises a plurality of three-dimensional (3-D) protruded structures,', 'wherein the three-dimensional (3-D) protruded structures are spaced, or arranged in a one-dimensional (1-D) array, or in a two-dimensional (2-D) ...

FIELD-EFFECT TRANSISTOR FOR SENSING TARGET MOLECULES

A field-effect transistor for sensing target molecules, the field-effect transistor comprising: a substrate; an electric field sensitive layer on the substrate; a hexagonal boron nitride layer comprising a first surface and a second surface, wherein the first surface of the hexagonal boron nitride layer is on the electric field sensitive layer and wherein the second surface of the hexagonal boron nitride layer is functionalized with a plurality of receptor molecules; two or more electrical contacts wherein each of the electrical contacts are in electrical contact with the electric field sensitive layer. 1. A field-effect transistor for sensing target molecules , the field-effect transistor comprising:a substrate;an electric field sensitive layer on the substrate; 'wherein the first surface of the hexagonal boron nitride layer is on the electric field sensitive layer and wherein the second surface of the hexagonal boron nitride layer is functionalized with a plurality of receptor molecules;', 'a hexagonal boron nitride layer comprising a first surface and a second surface,'}two or more electrical contacts wherein each of the electrical contacts are in electrical contact with the electric field sensitive layer.2. The field-effect transistor of claim 1 , wherein each of the plurality of receptor molecules has a binding affinity for the target molecules claim 1 , and wherein upon interaction between a receptor molecule and a target molecule an electric field is generated thereby gating the electric field sensitive layer.3. The field-effect transistor of claim 2 , wherein the target molecules are charged and wherein upon interaction between the receptor molecule and the target molecule the target molecule becomes bound to the receptor molecule and the change in net charge generates the electric field.4. The field-effect transistor of claim 1 , wherein the plurality of receptor molecules is attached to the hexagonal boron nitride layer using linker molecules.5. The field- ...

METHOD FOR CONTROLLING THE MOVEMENT OF A POLYNUCLEOTIDE THROUGH A TRANSMEMBRANE PORE

The invention relates to new methods of controlling the movement of polynucleotides through transmembrane pores. The invention also relates to new methods of characterising target polynucleotides using helicases. 1. A method for controlling the movement of a polynucleotide through a transmembrane pore , comprising:(a) providing the polynucleotide with one or more helicases attached to the polynucleotide and one or more molecular brakes attached to the polynucleotide;(b) contacting the polynucleotide provided in step (a) with the pore; and(c) applying a potential across the pore such that the one or more helicases and the one or more molecular brakes are brought together and both control the movement of the polynucleotide through the pore.2. A method according to claim 1 , wherein the one or more molecular brakes comprise (a) one or more compounds which bind to the polynucleotide and/or (b) one or more proteins which bind to the polynucleotide.3. A method according to claim 2 , wherein the one or more compounds are one or more macrocycles.4. A method according to claim 3 , wherein the one or more macrocycles are one or more of cyclodextrins claim 3 , calixarenes claim 3 , cyclic peptides claim 3 , crown ethers claim 3 , cucurbiturils claim 3 , pillararenes claim 3 , derivatives thereof or a combination thereof.5. A method according to claim 1 , wherein (i) the one or more molecular brakes are not one or more single stranded binding proteins (SSB); and/or (ii) the one or more molecular brakes are derived from one or more polynucleotide handling enzymes.6. (canceled)7. A method according to claim 5 , wherein the one or more polynucleotide handling enzymes are one or more polymerases claim 5 , exonucleases claim 5 , helicases claim 5 , topoisomerases or a combination thereof.8. A method according to claim 1 , wherein the one or more molecular brakes are derived from one or more helicases.9. A method according to claim 8 , wherein the one or more molecular brakes derived ...

CHEMICAL SENSOR PACKAGE FOR HIGHLY PRESSURED ENVIRONMENT

A package for a chemical sensor including an encapsulation and a pressure balancing structure is disclosed. The encapsulation encapsulates a chemical sensor and has a hole for exposing a chemical sensitive part of the chemical sensor. The pressure balancing structure balances pressure applied to the chemical sensor at the chemical sensitive part. 1. A method for packaging a chemical sensor comprising:encapsulating a chemical sensor by a encapsulation;providing a hole for exposing a chemical sensitive part of the chemical sensor; andproviding a pressure balancing structure for balancing pressure applied to the chemical sensor at the chemical sensitive part.2. The method in accordance with claim 1 , wherein the pressure balancing structure is a pressure balancing hole for applying counter pressure to the chemical sensor at the opposite side of the chemical sensitive part claim 1 , the method further comprising providing Redistribution Layer (RDL) on the chemical sensor for moving a wiring outside of the encapsulation away from the opposite side of the chemical sensitive part.3. The method in accordance with claim 1 , wherein the pressure balancing structure is a pressure balancing supporting structure for applying counter pressure to the chemical sensor at the opposite side of the chemical sensitive part claim 1 , the method further comprising providing Redistribution Layer (RDL) on the chemical sensor for moving a wiring outside of the encapsulation away from the opposite side of the chemical sensitive part.4. The method in accordance with claim 1 , further comprising providing Through Mold Via (TMV) interconnection for connecting the chemical sensor to the wiring outside of the encapsulation.5. The method in accordance with claim 1 , wherein the package is fabricated through fan-out wafer level packaging (FO-WLP) processes.6. The method in accordance with claim 1 , further comprising coating the encapsulation by a hydrophobic conformal coating. This patent ...

SURFACE TREATMENT OF SEMICONDUCTOR SENSORS

A sensor component includes a sensor including a sensor surface and a reaction site in cooperation with the sensor and exposing the sensor surface. The reaction site including a reaction site surface. A surface agent is bound to the reaction site surface or the sensor surface. The surface agent includes a surface active functional group reactive with Bronsted base or Lewis acid functionality on the reaction site surface or the sensor surface and including distal functionality that does not have a donor electron pair. 1. A sensor component comprising:a sensor including a sensor surface;a reaction site in cooperation with the sensor and exposing the sensor surface, the reaction site including a reaction site surface; anda surface agent bound to the reaction site surface or the sensor surface, the surface agent including a surface active functional group reactive with the sensor surface and including distal functionality, the surface active functional group including phosphate, phosphonic acid, phosphinic acid, a bisphosphonic acid, multidentate phosphates or phosphonates, polyphosphates/phosphonates, alkoxy derivatives thereof, or any combination thereof, the distal functionality including an amine.2. The sensor of claim 1 , wherein the surface active functional group includes a phosphate claim 1 , phosphonic acid claim 1 , a phosphinic acid claim 1 , alkoxy derivatives thereof claim 1 , or any combination thereof.3. The sensor of claim 1 , wherein the amine is derived from a secondary claim 1 , tertiary or heterocyclic amine.4. The sensor of claim 3 , wherein the heterocyclic amine includes pyrrolidine claim 3 , pyrrole claim 3 , imidazole claim 3 , piperidine claim 3 , pyridine claim 3 , pyrimidine claim 3 , purine claim 3 , or combinations thereof.5. The sensor of claim 1 , wherein the surface agent is an alkyl phosphonic acid claim 1 , a salt of quaternary amino phosphonic acids claim 1 , a fluorinated or chlorinated derivative thereof claim 1 , a derivative ...

WIDE DYNAMIC RANGE FLUID SENSOR BASED ON NANOWIRE PLATFORM

Device () for detecting a concentration of a substance in a fluid sample, the device comprising: a substrate (); an insulating layer () arranged on the substrate (); a plurality of individually electrically addressable semiconducting nanowires () arranged on the insulating layer (), each one of the plurality of nanowires being covered by an insulating material () and arranged for sensing of the substance through an electrical characteristic of the nanowire; and a sample compartment () for providing the fluid sample in contact with each of the plurality of nanowires; wherein for each of the plurality of nanowires (), at least one of cross sectional dimension, insulator thickness and type of insulating material is selected such that each of the nanowires has a different detection range, and such that the dynamic range of the device is higher than the dynamic range of each of the individual nanowires. 1. A device for quantitative detection of a substance in a fluid sample , said device comprising:a substrate;an electrically insulating layer arranged on said substrate;a plurality of individually addressable nanowires arranged on said electrically insulating layer, each nanowire of said plurality of nanowires being covered by an insulating material, the plurality of nanowires being arranged for detecting a presence of the substance in the fluid sample through measurement of an electrical characteristic of a nanowire of the plurality of nanowires, each of said nanowire having a length, a width and a thickness;a sample compartment for comprising said fluid sample, wherein said sample compartment is arranged such that it covers at least a part of each nanowire of said plurality of nanowires;wherein said length, said width and said thickness of corresponding nanowires are sized to form different detection ranges for the substance.2. The device as according to claim 1 , wherein a combination of the different detection ranges form a substantially continuous detection range ...

BIOSENSOR ELECTRODE HAVING THREE-DIMENSIONAL STRUCTURED SENSING SURFACES

Embodiments of the invention include a method of using a sensor. The method includes accessing a sample and exposing the sample to the sensor. The sensor includes a sensing circuit having with a field effect transistor (FET) having a gate structure. A cavity is formed in a fill material that is over the gate structure. A probe of the sensor is within a portion of the cavity. An upper region of the probe is above a top surface of the fill material, and a lower region of the probe is below the top surface of the fill material. The probe structure includes a 3D sensing surface structure, and a liner is formed on the 3D sensing surface and configured to function as a recognition element. A portion of the liner is on the lower region of the probe and positioned between sidewalls of the cavity and the 3D sensing surface. 1. A method of using a sensor , the method comprising:accessing a sample; andexposing the sample to a sensor; a sensing circuit comprising a field effect transistor (FET) having a gate structure;', 'a fill material deposited over the FET;', 'a first cavity formed in the fill material and over the gate structure;', 'a first probe within a portion of the first cavity and communicatively coupled to the sensing circuit and the gate structure;', 'where an upper region of the first probe is above a top surface of the fill material;', 'where a lower region of the first probe is below the top surface of the fill material;', 'where the first probe structure comprises a three-dimensional (3D) sensing surface structure; and', 'a first liner formed on the first 3D sensing surface and configured to function as a first recognition element;', 'where the first liner is on the upper region and the lower region of the first probe; and', 'where the portion of the first liner that is on the lower region of the first probe is positioned between sidewalls of the first cavity and the first 3D sensing surface;, 'where the sensor comprisesbased at least in part on the first 3D ...

HANDHELD SENSOR FOR RAPID, SENSITIVE DETECTION AND QUANTIFICATION OF SARS-CoV-2 FROM SALIVA

Various examples are provided for disposable medical sensors that can be used for detection of SARS-CoV-2 antigen, cardiac troponin I, or other biosensing applications. In one example, a medical sensing system includes single-use disposable test strip comprising a functionalized sensing area configured to detect SARS-CoV-2 antigen and a portable sensing and readout device including pulse generation circuitry that can generate synchronized gate and drain pulses for detection and quantification of SARS-CoV-2 antigen in biological samples. In another example, a method includes providing a saliva sample to a functionalized sensing area configured to detect SARS-CoV-2 antigen, generating synchronized gate and drain pulses for a transistor, the gate pulse provided via electrodes of the functionalized sensing area, and sensing an output of the transistor that is a function of a concentration of SARS-CoV-2 antigen in the sample. 1. A medical sensing system , comprising:a single-use disposable test strip comprising a functionalized sensing area disposed between first and second electrodes, the functionalized sensing area configured to detect SARS-CoV-2 antigen; and pulse generation circuitry configured to generate synchronized gate and drain pulses, the first electrode of the disposable test strip electrically coupled to a gate pulse output of the pulse generation circuitry; and', 'a transistor having a drain electrically controlled by a drain pulse output of the pulse generation circuitry, and a gate electrically coupled to the second electrode of the disposable test strip., 'a portable sensing and readout device comprising2. The medical sensing system of claim 1 , wherein the functionalized sensing area is functionalized with anti-SARS-CoV-2 antibody.3. The medical sensing system of claim 2 , wherein the anti-SARS-CoV-2 antibody is bound to a gold (Au) sensing area surface.4. The medical sensing system of claim 3 , wherein the Au sensing area surface is treated with thio- ...

BIO-SENSOR PIXEL CIRCUIT WITH AMPLIFICATION

A pixel circuit acts as a sensing element in a sensing device. The pixel circuit includes a sensing electrode, a first gate electrically connected to the sensing electrode, a second gate in electrical communication with the first gate, and a readout device that is electrically connected to the second gate. An input voltage applied to the sensing electrode is amplified between the first gate and the second gate, the amplification being measured as an output signal from the readout device to perform a sensing operation. For example, the output signal may be relatable to pH, analyte measurements, or other properties of sample liquids analyzed by the sensing device. A sensing device may include multiple pixels disposed on a substrate, each pixel including said pixel circuit. Driver circuits controlled by control electronics are configured to generate signals that selectively address the pixels and to read out voltages at the sensing electrodes. 1. A method of driving a pixel array sensing device comprising a plurality of pixels;each pixel in the pixel array acting as a sensing element in the sensing device, and each pixel including a pixel circuit comprising: a sensing electrode; a first gate electrically connected to the sensing electrode; a second gate in electrical communication with the first gate via an active region; and a readout device that is electrically connected to the second gate;wherein the sensing electrode, first gate, second gate, and readout device are integrated onto a common substrate;the driving method comprising the steps of:biasing each pixel circuit with a constant input current source;applying timing signals to one or more row selection elements to selectively address one or more of the pixel circuits;perturbing an input voltage to the sensor element in each of the addressed pixel circuits, wherein the input voltage applied to the sensing electrode is amplified between the first gate and the second gate in each of the addressed pixel circuits; ...

Semiconductor Device for Determining a Biomolecule Characteristic

A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.

TRANSISTOR-BASED ZINC SENSOR

Embodiments of the invention are directed to a solid-state zinc sensor. A non-limiting example of the sensor includes a semiconductor substrate. The sensor can also include an assembly surface on the semiconductor substrate. The sensor can also include a zinc detection monolayer chemically bound to the assembly surface. The sensor can also include a power supply electrically connected to the semiconductor substrate. 1. A solid-state zinc sensor comprising:a semiconductor substrate;an assembly surface on the semiconductor substrate;a zinc detection monolayer chemically bound to the assembly surface, wherein the zinc detection monolayer is more chemically selective to zinc ions than to non-zinc ions and non-ions; anda power supply electrically connected to the semiconductor substrate.2. (canceled)3. The sensor of claim 1 , wherein the semiconductor substrate comprises carbon nanotubes.4. The sensor of claim 1 , wherein the semiconductor substrate comprises silicon.5. The sensor of claim 1 , wherein the assembly surface comprises a metal oxide layer.6. The sensor of claim 5 , wherein the metal oxide layer comprises hafnium oxide claim 5 , aluminum oxide claim 5 , tungsten oxide claim 5 , or titanium oxide.820.-. (canceled) The present invention generally relates to fabrication methods and resulting structures for semiconductor devices. More specifically, the present invention relates to transistor-based (e.g., field effect transmitter (FET)-based) zinc sensors.Zinc can play an important role in biological systems. In healthy individuals, zinc homeostasis is established and maintained for proper cellular functions. Disruptions or fluctuations in zinc levels in biological systems, however, can be correlated with a variety of neurological diseases and disorders. For instance, aberrant concentrations of zinc ions can be associated with Alzheimer's disease, amyotrophic lateral sclerosis (ALS), Parkinson's disease, ischemia, and epilepsy. Measuring and monitoring cellular ...

Methods of Fabricating and Operating a Solid-State Zinc Sensor

Embodiments of the invention are directed to a solid-state zinc sensor. A non-limiting example of the sensor includes a semiconductor substrate. The sensor can also include an assembly surface on the semiconductor substrate. The sensor can also include a zinc detection monolayer chemically bound to the assembly surface. The sensor can also include a power supply electrically connected to the semiconductor substrate. 2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. The method of claim 1 , wherein the semiconductor substrate comprises silicon.10. The method of claim 9 , wherein the biological fluid is a brain fluid.11. (canceled)12. (canceled)13. (canceled) This application is a continuation of U.S. application Ser. No. 15/635,447, titled “Transistor Based Zinc Sensor” filed Jun. 28, 2017, the contents of which are incorporated by reference herein in its entirety.The present invention generally relates to fabrication methods and resulting structures for semiconductor devices. More specifically, the present invention relates to transistor-based (e.g., field effect transmitter (FET)-based) zinc sensors.Zinc can play an important role in biological systems. In healthy individuals, zinc homeostasis is established and maintained for proper cellular functions. Disruptions or fluctuations in zinc levels in biological systems, however, can be correlated with a variety of neurological diseases and disorders. For instance, aberrant concentrations of zinc ions can be associated with Alzheimer's disease, amyotrophic lateral sclerosis (ALS), Parkinson's disease, ischemia, and epilepsy. Measuring and monitoring cellular zinc concentrations in biological systems can be useful in the treatment and study of such diseases and disorders.Embodiments of the invention are directed to a transistor-based zinc sensor. A non-limiting example of the sensor includes a semiconductor substrate. The sensor can also include an assembly surface on the semiconductor ...

DEBYE LENGTH MODULATION

Systems and methods for detection of biological agents are generally described. Target biological agents may be detected by use of a sensor, which in some situations is a nanowire. An external electric field is applied in some embodiments to induce an electric dipole. The induced electric dipole is detected, allowing detection of the biological agent. 1. A device for sensing a chemical and/or biological analyte , comprising:a nanosensor, wherein at least a portion of the nanosensor is functionalized with a chemical and/or biological detector species; anda source of an alternating electric field, wherein the source is configured such that the electric field produced by the source is incident upon the nanosensor.219-. (canceled)20. A method of sensing a chemical and/or biological analyte , comprising:applying an alternating electric field to a nanosensor functionalized with a chemical and/or biological detector species such that the Debye length of an analyte associated with the chemical and/or biological detector species is altered.2124-. (canceled)25. A method of sensing a chemical and/or biological analyte , comprising:applying an alternating electric field to a nanosensor functionalized with a chemical and/or biological detector species in the presence of a sample comprising an analyte;applying an electrical potential across the nanosensor;collecting a first set of data, based on the applied electrical potential, at points in time at which the alternating electric field is at a first power to provide a background signal; andcollecting a second set of data, based on the applied electrical potential, at points in time at which the alternating electric field is at a second power that is different from the first power to provide a signal indicative of a property of the analyte, the detector species, and/or an interaction between the analyte and the detector species.2632-. (canceled)33. A method of sensing a chemical and/or biological analyte , comprising:applying an ...

SENSOR HAVING A THIN-FILM INHIBITION LAYER

Sensors and detection systems suitable for measuring analytes, such as biomolecule, organic and inorganic species, including environmentally and medically relevant volatiles and gases, such as NO, NO2, CO2, NH3, H2, CO and the like, are provided. Certain embodiments of nanostructured sensor systems are configured for measurement of medically important gases in breath. Applications include the measurement of endogenous nitric oxide (NO) in breath, such as for the monitoring or diagnosis of asthma and other pulmonary conditions. 1. A sensor device for detecting an analyte species in a fluid sample medium , comprising:(a) a substrate having a substrate surface;(b) one or more nanostructures disposed over the substrate surface;(c) one or more conducting elements in electrical communication with the nanostructure and configured to communicate with measurement circuitry; and(d) a layer coating at least a portion of the substrate surface, wherein the substrate and the nanostructures are differentially coated with said layer such that at least a portion of the nanostructures are exposed to permit interaction with the sample medium, wherein the layer inhibits at least one interaction between the substrate surface and the sample medium, so as to prevent or reduce at least one interference response of the device which would be detectable by the measurement circuitry via the one or more conducting elements in the absence of the layer, and wherein the coated portions of the substrate surface contact the layer.2. The sensor device of wherein at least a portion of one or more conducting elements are coated with said layer and said layer inhibits at least one interaction between the one or more conducting elements and the sample medium claim 1 , so as to prevent or reduce at least one interference response which would be detectable by the measurement circuitry in the absence of the layer.3. The sensor device of wherein the layer is deposited by an atomic layer deposition method.4. ...

BINDING PROBE CIRCUITS FOR MOLECULAR SENSORS

In various embodiments a molecular circuit is disclosed. The circuit comprises a negative electrode, a positive electrode spaced apart from the negative electrode, and a binding probe molecule conductively attached to both the positive and negative electrodes to form a circuit having a conduction pathway through the binding probe. In various examples, the binding probe is an antibody, the Fab domain of an antibody, a protein, a nucleic acid oligomer hybridization probe, or an aptamer. The circuit may further comprise molecular arms used to wire the binding probe to the electrodes. In various embodiments, the circuit functions as a sensor wherein electrical signals, such as changes to voltage, current, impedance, conductance, or resistance in the circuit, are measured as targets interact with the binding probe. In various embodiments, the circuit provides a means to measure the presence, absence, or concentration of an analyte in a solution. 1a first electrode;a second electrode spaced apart from the first electrode;a binding probe electrically connected to both the first and second electrodes to form a conductive pathway between the first and second electrodes; andat least one arm molecule having first and second ends, the first end bonded to the binding probe and the second end bonded to the first electrode,wherein the at least one arm molecule acts as an electrical wire between the binding probe and the first electrode.. A circuit comprising: This application is a continuation of U.S. patent application Ser. No. 16/015,049 filed on Jun. 21, 2018, entitled “Binding Probe Circuits for Molecular Sensors,” which is a continuation of PCT Application No. PCT/US18/29393, filed on Apr. 25, 2018 entitled “Binding Probe Circuits for Molecular Sensors.” PCT Application No. PCT/US18/29393 claims priority to and the benefit of U.S. Provisional Patent Application Ser. No. 62/503,812 filed May 9, 2017 and entitled “Binding Probe Circuits for Molecular Sensors,” the disclosures ...

SENSING A PROPERTY OF A FLUID

In an example, a device for sensing a property of a fluid may include an ion-sensitive field effect transistor (ISFET) having a gate, a source, and a drain. The device may also include a first metal element in contact with the gate and a switching layer in contact with the first metal layer. A resistance state of the switching layer is to be modified through application of an electrical field of at least a predefined strength through the switching layer and is to be retained in the switching layer following removal of the electrical field. The device may also include a metal plate in contact with the switching layer, in which the metal plate is to directly contact the fluid for which the property is to be sensed. 1. A device for sensing a property of a fluid , said device comprising:an ion-sensitive field effect transistor (ISFET) having a gate, a source, and a drain;a first metal element in contact with the gate;a switching layer in contact with the first metal layer, wherein a resistance state of the switching layer is to be modified through application of an electrical field of at least a predefined strength through the switching layer, and wherein the switching layer is to retain the resistance state following removal of the electrical field; anda metal plate in contact with the switching layer, wherein the metal plate is to directly contact the fluid for which the property is to be sensed.2. The device according to claim 1 , wherein the switching layer is formed of a switching material that has a first resistance state in which the switching layer has a first resistance level and a second resistance state in which the switching layer has a second resistance level claim 1 , wherein the first resistance level is lower than the second resistance level claim 1 , and wherein in the first resistance state claim 1 , the switching layer prevents a selected voltage from being established in the ISFET.3. The device according to claim 2 , wherein the switching layer is ...

ELECTROCHEMICAL DETECTION OF PROTEASES USING AC VOLTAMMETRY ON NANOELECTRODE ARRAYS

An electrochemical method for measuring the activity of enzymes using nanoelectrode arrays fabricated with vertically aligned carbon nanofibers. Short peptide substrates specific to disease-related enzymes are covalently attached to the exposed nanofiber tips. A redox moiety, such as ferrocene, can be linked at the distal end of the nanofibers. Contact of the arrays with a biological sample containing one or more target enzymes results in cleavage of the peptides and changes the redox signal of the redox moiety indicating the presence of the target enzymes. 1. A nanoelectrode array comprising a substrate having a plurality of carbon nanofibers extending vertically therefrom , said array being capable of detecting the presence of one or more enzymes present within a biological sample.2. The array according to claim 1 , wherein said nanofibers comprise a proximal end that is attached to said substrate and a distal end that is spaced from said substrate.3. The array according to claim 2 , wherein said nanofibers are encapsulated claim 2 , except for at least one of said distal ends claim 2 , within a matrix of an insulative material.4. The array according to claim 3 , wherein said insulative material comprises silicon dioxide.5. The array according to claim 2 , wherein said distal end of at least one of said nanofibers comprises a peptide or peptide residue covalently attached thereto.6. The array according to claim 5 , wherein said peptide or peptide residue is capable of being cleaved by a protease enzyme that is expressed by a cancer-causing cell.7. The array according to claim 6 , wherein said peptide is a tetrapeptide selected from the group consisting of Ala-Ala-Asn-Leu (SEQ ID NO:1) claim 6 , Leu-Arg-Phe-Gly (SEQ ID NO:2) claim 6 , and Pro-Leu-Ser-Leu (SEQ ID NO:3).8. The array according to claim 5 , wherein said peptide or peptide residue is a ferrocenyl peptide or peptide residue.9. The array according to claim 5 , wherein said peptide or peptide residue is ...

Backside CMOS Compatible BioFET With No Plasma Induced Damage

The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer. 1. A device , comprising:a first BioFET device, the first BioFET device including:a gate structure on a first side of a semiconductor substrate;a source region and a drain region in the semiconductor substrate adjacent to the gate structure;a channel region interposing the source and drain regions and underlying the gate structure;a sensing film directly on and covering at least a portion of the channel region on a second side of the semiconductor substrate; anda microfluidic channel or microfluidic well disposed over the sensing film.2. The device of claim 1 , wherein the semiconductor substrate is a silicon containing substrate.3. The device of claim 1 , wherein the microfluidic channel is bonded to the second side of the semiconductor substrate.4. The device of claim 1 , further comprising a multi-layer interconnect structure formed on the first side of the semiconductor substrate.5. The device of claim 1 , wherein the sensing film is selected from the group consisting of HfO claim 1 , TaO claim 1 , Pt claim 1 , Au claim 1 , W claim 1 , Ti claim 1 , Al claim 1 , Cu claim 1 , oxides of such metals claim 1 , SiO claim 1 , SiN claim 1 , AlO claim 1 , TiO claim 1 , TiN claim 1 , ZrO claim 1 , SnO claim 1 , and SnO.6. The device of claim 1 , wherein the sensing film extends over and covers a portion of the second side of the semiconductor substrate.7. The device of claim 1 , further comprising an intrinsic dielectric ...

INTEGRATED SENSOR ARRAYS FOR BIOLOGICAL AND CHEMICAL ANALYSIS

The invention is directed to apparatus and chips comprising a large scale chemical field effect transistor arrays that include an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid for analysis. In one aspect such transistor arrays have a pitch of 10 μm or less and each sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region. In one embodiment, the characteristic of said chemical or biological sample is a concentration of a charged species and wherein each of said chemical field effect transistors is an ion-sensitive field effect transistor having a floating gate with a dielectric layer on a surface thereof, the dielectric layer contacting said sample fluid and being capable of accumulating charge in proportion to a concentration of the charged species in said sample fluid. In one embodiment such charged species is a hydrogen ion such that the sensors measure changes in pH of the sample fluid in or adjacent to the sample-retaining region thereof. Apparatus and chips of the invention may be adapted for large scale pH-based DNA sequencing and other bioscience and biomedical applications. 1. An apparatus comprising a chemical field effect transistor array in a circuit-supporting substrate, such transistor array having disposed on its surface an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid, wherein such transistor array has a pitch of 10 .mu.m or less and each sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region. This application is a continuation of U.S. patent application Ser. No. 14/ ...

Sensor arrays and methods for making same

A system includes a sensor including a sensor pad and includes a well wall structure defining a well operatively connected to the sensor pad. The sensor pad is associated with a lower surface of the well. The well wall structure defines an upper surface and a wall surface extending between the upper surface and the lower surface. The upper surface is defined by an upper buffer material having an intrinsic buffer capacity of at least 2×10 17 groups/m 2 . The wall surface is defined by a wall material having an intrinsic buffer capacity of not greater than 1.7×10 17 groups/m 2 .

Systems And Methods For Electronic Detection With Nanofets

There is disclosed a system for electrical charge detection comprising a nanoFET device. Also disclosed is a method of electrical charge detection for single molecule sequencing. The method includes attaching a macromolecule or assemblies thereof to a gate of a nanoFET device and flowing in a solution of charge tags, where a charge tag includes a nucleotide attached to a charge complex. The method also includes incorporating one charge tag into the macromolecule or assemblies thereof and cleaving the charge tags from the macromolecule or assemblies thereof. The method further includes detecting at least one of current and voltage from the nanoFET device. 130.-. (canceled)31. A method of detecting a target protein , the method comprising:attaching a first antibody to a surface of a device, the device having at least one nanoFET disposed in a well, the nanoFET having a source, a drain, and a gate, the first antibody disposed over the gate;applying a sample including the target protein to the device;applying a second antibody to the device, the second antibody having a charge label, the target protein and the second antibody attaching to the first antibody to form an antibody assembly; anddetecting with the nanoFET the presence of the antibody assembly.32. The method of claim 31 , wherein the target protein and the second antibody bind before the protein binds with the first antibody.33. The method of claim 31 , wherein the target protein and the second antibody bind after the protein binds with the first antibody.34. The method of claim 31 , wherein the device further includes two charge electrodes claim 31 , the method further comprising applying a DC voltage to the charge electrodes to push the second antibody toward the nanoFET.35. The method of claim 34 , wherein the DC voltage is in a range of 0.1 V/cm to 100 V/cm.36. The method of claim 31 , wherein the device further includes two charge electrodes claim 31 , the method further comprising applying a AC voltage ...

BIO-SENSOR PIXEL CIRCUIT WITH AMPLIFICATION

A pixel circuit acts as a sensing element in a sensing device. The pixel circuit includes a sensing electrode, a first gate electrically connected to the sensing electrode, a second gate in electrical communication with the first gate, and a readout device that is electrically connected to the second gate. An input voltage applied to the sensing electrode is amplified between the first gate and the second gate, the amplification being measured as an output signal from the readout device to perform a sensing operation. For example, the output signal may be relatable to pH, analyte measurements, or other properties of sample liquids analyzed by the sensing device. A sensing device may include multiple pixels disposed on a substrate, each pixel including said pixel circuit. Driver circuits controlled by control electronics are configured to generate signals that selectively address the pixels and to read out voltages at the sensing electrodes. 1. A pixel circuit that acts as a sensing element in a sensing device , the pixel circuit comprising:a sensing electrode;a first gate electrically connected to the sensing electrode;a second gate in electrical communication with the first gate via an active region; anda readout device that is electrically connected to the second gate;wherein an input voltage applied to the sensing electrode is amplified between the first gate and the second gate, the amplification being measured as an output signal from the readout device to perform a sensing operation.2. The pixel circuit of claim 1 , wherein the active region is connected to an active region drain and an active region source to form a transistor comprising a channel between the first gate and the second gate.3. The pixel circuit of claim 1 , wherein the first gate is connected to the sensing electrode by a via connection through an insulating layer and a passivation surface.4. The pixel circuit of claim 1 , wherein a physical area of the sensing electrode is larger than a ...

SENSORS WITH A FRONT-END-OF-LINE SOLUTION-RECEIVING CAVITY

Structures for transistor-based sensors and related fabrication methods. A layer stack is formed that includes a semiconductor layer and a cavity. A transistor is formed that has a gate electrode over the layer stack, and an interconnect structure is formed over the layer stack and the transistor. First and second openings are formed that extend through the metallization levels of the interconnect structure and the semiconductor layer to the cavity. The first opening defines a fluid inlet coupled to the cavity, and the second opening defines a fluid outlet coupled to the cavity. 1. A structure for a sensor , the structure comprising:a substrate;a layer stack including a first semiconductor layer and a cavity, the first semiconductor layer positioned over the cavity, and the cavity positioned between the first semiconductor layer and the substrate;a transistor including a gate electrode over the first semiconductor layer and the cavity;a buried insulator layer including a plurality of sections positioned on the substrate between the first semiconductor layer and the substrate, the plurality of sections of the buried insulator layer arranged to surround the cavity;an interconnect structure over the layer stack and the transistor, the interconnect structure including a plurality of metallization levels; anda first opening and a second opening extending through the metallization levels of the interconnect structure and the first semiconductor layer to the cavity, the first opening defining a fluid inlet coupled to the cavity, and the second opening defining a fluid outlet coupled to the cavity.2. The structure of wherein the transistor is laterally positioned between the first opening and the second opening.3. The structure of further comprising:an anchor extending through the first semiconductor layer and the cavity, the anchor positioned to surround the cavity.4. The structure of wherein the anchor is comprised of a dielectric material claim 3 , and the anchor is ...

METAL OXIDE-BASED CHEMICAL SENSORS

Metal oxide-based integrated chemical sensors using a hybrid polycrystalline gas-sensitive material to create a uniform and integrated sensory system. The sensor system provides the unique properties such as improved sensor sensitivity due to reduced thickness, improved selectivity for specific analyte detection in the ppb, faster time of response, decreased time of reset and decreased power consumption in comparison to existing sensor technologies. The present invention also provides novel, metal oxide-based chemical sensor platforms, a novel method of making metal oxide-based chemical sensors, platforms and/or integrated chemical sensors. 1. A chemical sensor , comprising:{'sub': 2', '2, '(a) an oxidized silicon membrane comprising: a silicon (S1) layer; and a silicon oxide (SiO) layer, wherein the SiOlayer is located on top of the silicon layer and, comprises: a sensor area;'}{'sub': '2', '(b) a heating element in contact with the SiOlayer and located near at least one edge of the sensor area;'}{'sub': '2', '(c) a pair of interdigitated electrical leads in contact with the SiOlayer and at least partly located on the sensor area;'}{'sub': '2', "(d) a metal oxide layer located on the sensor area and in contact with at least a part of the pair of interdigitated electrical leads and the SiOlayer, said metal oxide layer comprising self-assembled metal oxide nanograins and homojunctions between the nanograins on the metal oxide layer's surface;"}(e) a uniform dopant layer between 10-200 nm thick comprising nanoparticles wherein said dopant layer is applied to the surface of the metal oxide layer by sputtering; and(f) multiple heterojunctions that are formed between the metal oxide nanograins and the dopant nanoparticles to form an electrically and physically integrated hybrid polycrystalline structure.2. The sensor of claim 1 , wherein the membrane claim 1 , further comprises: a plurality of Si/SiOconnectors.3. The sensor of claim 1 , wherein the membrane claim 1 , ...

Integrated sensor arrays for biological and chemical analysis

An apparatus comprising a chemical field effect transistor array in a circuit-supporting substrate is disclosed. The transistor array has disposed on its surface an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid. The transistor array has a pitch of 10 μm or less and a sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region.

PH VALUE MEASURING DEVICE COMPRISING IN SITU CALIBRATION MEANS

The invention concerns a device for measuring the pH of an effluent, said device comprising means for measuring an item of information representative of the pH of said effluent intended to be brought into contact with said effluent. 16-. (canceled)7. A method of performing calibrated measurements of the pH of an effluent using a non-glass electrode probe , comprising:placing the probe in contact with the effluent; biasing an ISFET transistor by applying a constant voltage and current across source and drain terminals of the ISFET, a gate terminal of which is insulated from the source and drain terminals and in contact with the effluent and hence at the same voltage as the non-glass reference electrode;', {'sub': 'GS', 'measuring a voltage Vbetween the non-glass reference electrode and the ISFET source terminal;'}, {'sub': GS', 'GS, 'determining the pH of the effluent from Vand a calibration curve expressing Vas a function of the pH of the effluent; and'}], 'repeatedly obtaining measurements of the pH of the effluent by, for each measurement,'} [{'sub': '1', 'modifying the pH of the effluent in the vicinity of the ISFET gate terminal and non-glass reference electrode to a first known value pH;'}, {'sub': GS1', '1, 'obtaining a corresponding value Vby performing the biasing and measuring steps on the effluent at the known pH; and'}, {'sub': 0', 'GS1', '1, 'calibrating the probe by modifying an intercept point Ein the calibration curve, using the values Vand pH.'}], 'periodically, while obtaining measurements of the effluent pH, performing an in situ calibration of the probe, by'}8. The method of wherein the calibration curve is of the form{'br': None, 'i': V', '=C', 'E, 'sub': GS', '2', '0, '·pH+, where'}{'sub': 'GS', 'Vis the gate-source voltage of the ISFET obtained in the measuring step;'}{'sub': '2', 'Cis a predetermined value representing the slope of the curve;'}pH is the pH of the effluent; and{'sub': '0', 'Eis a predetermined value representing the intercept ...

THIN BODY FET NANOPORE SENSOR FOR SENSING AND SCREENING BIOMOLECULES

A thin body field effect transistor (FET) nanopore sensor includes a silicon on insulator (SOI) structure having an annular shape and comprising a source, a drain and a thin body channel interposed therebetween. A nanopore is formed in a central opening of the SOI structure. A gate dielectric is disposed on the SOI structure insulating the SOI structure from a liquid gate within the nanopore. A back gate is formed around the SOI structure. A shallow trench isolation (STI) layer is formed between the SOI structure and the back gate. 1. A thin body field effect transistor (FET) nanopore sensor , comprising:a silicon on insulator (SOI) structure having an annular shape and comprising a source, a drain and a thin body channel interposed therebetween;a nanopore formed in a central opening of the SOI structure;a gate dielectric disposed on the SOI structure insulating the SOI structure from a liquid gate within the nanopore;a back gate formed around the SOI structure; anda shallow trench isolation (STI) layer formed between the SOI structure and the back gate.2. The FET nanopore sensor of claim 1 , additionally comprising a cavity formed below the liquid gate for receiving biomolecules and solution that pass through the micropore.3. The FET nanopore sensor of claim 1 , wherein the cavity comprises:an oxide layer of the SOI structure formed below the gate and STI layer;a semiconductor layer of the SOI structure formed below the oxide layer; anda nitride layer formed below the SOI structure,wherein the oxide layer, the semiconductor layer, and the nitride layer each have an annular shape with a relatively large central opening and the openings of the oxide layer, the semiconductor layer, and the nitride layer together form the cavity.4. The FET nanopore sensor of claim 3 , wherein the oxide layer includes silicon dioxide claim 3 , the semiconductor layer includes silicon claim 3 , and the nitride layer includes silicon nitride.5. The FET nanopore sensor of claim 1 , wherein ...

Partially Neutral Single-Stranded Oligonucleotide

The present invention relates to a detection unit comprising a solid surface and a partially neutral single-stranded oligonucleotide comprising a first portion. The first portion is attached to the solid surface; the length of the first portion is about 50% of the total length of the partially neutral single-stranded oligonucleotide; and the first portion comprises at least one neutral nucleotide and at least one unmodified nucleotide. The invention improves the detection sensitivity and accuracy of the detection of biomolecules. 1. A partially neutral single-stranded oligonucleotide comprising at least one electrically neutral nucleotide and at least one negatively charged nucleotide.2. The partially neutral single-stranded oligonucleotide according to claim 1 , wherein the electrically neutral nucleotide comprises a phosphate group substituted by a C-Calkyl group.3. The partially neutral single-stranded oligonucleotide according to claim 1 , wherein the negatively charged nucleotide comprises an unsubstituted phosphate group.4. The partially neutral single-stranded oligonucleotide according to claim 1 , which comprises a plurality of the electrically neutral nucleotides claim 1 , and at least one negatively charged nucleotide is positioned between two of the electrically neutral nucleotides.5. A detection unit comprising the partially neutral single-stranded oligonucleotide according to .6. The detection unit according to claim 5 , which further comprises a solid surface; and the partially neutral single-stranded oligonucleotide is attached on or located near the solid surface.7. The detection unit according to claim 6 , wherein the partially neutral single-stranded oligonucleotide comprises a first portion attached to the solid surface; the length of the first portion is about 50% of the total length of the partially neutral single-stranded oligonucleotide; and the first portion comprises at least one electrically neutral nucleotide and at least one negatively ...

MOLECULAR SENSOR BASED ON VIRTUAL BURIED NANOWIRE

The present invention provides a method and a system based on a multi-gate field effect transistor for sensing molecules in a gas or liquid sample. The said FET transistor comprises dual gate lateral electrodes (and optionally a back gate electrode) located on the two sides of an active region, and a sensing surface on top of the said active region. Applying voltages to the lateral gate electrodes, creates a conductive channel in the active region, wherein the width and the lateral position of the said channel can be controlled. Enhanced sensing sensitivity is achieved by measuring the channels conductivity at a plurality of positions in the lateral direction. The use of an array of the said FTE for electronic nose is also disclosed. 1. A system for sensing at least one type of molecules in a gas or liquid sample , comprising: 1) a piece of semiconductor with a first region extending between a source region and a drain region, and left and right lateral regions extending along the first region on different sides;', '2) left and right lateral gate electrodes that respectively produce an electric field in the left and right lateral regions, creating a conducting channel in the first region when appropriate voltages are applied to them, a position of the conducting channel depending on the applied voltages;', '3) a sensing surface adjacent to the first region, that molecules of the at least one type adhere to when the sensing surface is exposed to the molecules, the conductivity of the conducting channel being measurably affected by a local concentration of the adhering molecules near the position of the conducting channel; and, 'a) at least one multi-gate field effect transistor, comprisingb) a controller adapted to successively apply different voltages to the lateral gate electrodes of the transistor, and move the conducting channel to a plurality of different positions, and at each position to measure its conductivity and determine a local concentration of the ...

SEMICONDUCTOR DEVICE, pH SENSOR, BIOSENSOR AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Provided is a semiconductor device A including: a first electrode ; a second electrode ; a semiconductor layer in contact with the first electrode and the second electrode ; and a protective layer configured to cover at least a part of a surface of the semiconductor layer , wherein the protective layer includes a spinel oxide. 1. A semiconductor device comprising:a first electrode;a second electrode;a semiconductor layer in contact with the first electrode and the second electrode; anda protective layer configured to cover at least a part of a surface of the semiconductor layer, whereinthe protective layer includes a spinel oxide.2. The semiconductor device according to claim 1 , wherein the spinel oxide includes zinc (Zn) and gallium (Ga).3. The semiconductor device according to claim 1 , wherein the spinel oxide is ZnGaO.4. The semiconductor device according to claim 1 , wherein the semiconductor layer is an oxide including In claim 1 , Ga claim 1 , and Zn.5. The semiconductor device according to claim 1 , wherein the semiconductor layer is InGaZnO.6. The semiconductor device according to claim 1 , wherein{'sup': '21', 'a hydrogen content of the protective layer is equal to or less than 1×10atm/cc.'}7. The semiconductor device according to claim 1 , whereinthe protective layer has a passivation function.8. The semiconductor device according to claim 1 , whereina film thickness of the protective layer is equal to or more than 40 nm.9. The semiconductor device according to claim 1 , further comprising a substrate.10. The semiconductor device according to claim 9 , whereinthe substrate is one kind selected from the group consisting of glass, resin, silicon, and combinations of glass, resin, and silicon.11. The semiconductor device according to claim 9 , whereinthe substrate has flexibility.12. The semiconductor device according to claim 1 , further comprising:an insulating layer in contact with the semiconductor layer; anda third electrode provided to face the ...

Flip Chip Thin Film Hybrid Screen Printed Electrode Test Strip

This invention is about a product of a flip chip thin film hybrid screen printed electrode. It combines a primary screen printed electrode (SPE) device and a thin film material coated chip, in order to make a hybridized product. The product is used as a test strip for electrochemical analysis, such as environmental, bio-electrochemical and biomedical sensors. The hybridized electrodes design takes the benefits of low cost of screen printing technology, and high sensitivity of thin film coating nanotechnology. This invention is also about applying a flip chip method to manufacture the hybrid electrode. A chip of thin film material coated solid state substrate is surface mounted to a preliminary perforated SPE by a flip chip method/process. This method/process is fast, easy, cheap, uniform, and suitable for large scale manufacturing. 1. A test strip for electrochemical stripping analysis , comprising:a main body made of a insulative sheet material in a strip format, having a perforated hole, having a upside surface and down side surface;a set of counter electrode, on the up side surface of the main body , in the proximity of the hole;a set of reference electrode, on the up side surface of the main body, in the proximity of the hole;a set of work electrode, made of a chip, mounted to the down side surface of the main body;2. For the test strip product of the claim 1 ,the work electrode chip is made of a solid state substrate, such as a piece of graphite paper, carbon paper, ceramics, mica, glass, polymer plastics, silicon wafer, and a thin film material is deposited on the chip surface;3. For the test strip product of the claim 1 ,the chip is coated by a thin film technology via a physical vapor deposition (PVD), a chemical vapor deposition (CVD), or a plasma enhanced chemical vapor deposition (CVD) method;4. For the test strip product in the claim 1 ,the thin film material is made of the vertically free standing graphene containing carbon nanosheets material (Vertical ...

DNA Methylation Detection

The present invention relates to a method for detecting methylation of a target oligonucleotide molecule. The method comprises obtaining an electrical change occurring due to the binding of an electrically charged methylation detecting molecule and the target oligonucleotide molecule; wherein the electrically charged methylation detecting molecule has affinity to a methylated cytosine nucleotide. The invention improves the detection sensitivity and accuracy of the oligonucleotide methylation detection. 1. A method for detecting methylation of a target oligonucleotide molecule , comprising obtaining an electrical change occurring due to the binding of an electrically charged methylation detecting molecule and the target oligonucleotide molecule; wherein the electrically charged methylation detecting molecule has affinity to a methylated cytosine nucleotide.2. The method according to claim 1 , wherein the electrically charged methylation detecting molecule is selected from the group consisting of an anti-methylcytosine antibody claim 1 , a methyl binding domain protein and a restriction enzyme.3. The method according to claim 1 , wherein the electrical change is a threshold voltage shift change.4. The method according to claim 1 , wherein the target oligonucleotide molecule has a target sequence with at least one methylated cytosine nucleotide claim 1 , and the method comprises:capturing a single strand of the target oligonucleotide molecule by a recognizing single-stranded oligonucleotide molecule to form a duplex according to base complementarity;providing the electrically charged methylation detecting molecule; andbinding the duplex with the electrically charged methylation detecting molecule and detecting the electrical change due to the binding.5. The method according to claim 4 , wherein the duplex formed by the single strand of the target oligonucleotide molecule and the recognizing single-stranded oligonucleotide molecule comprises a bulge and the methylated ...

BIOCHEMICALLY ACTIVATED ELECTRONIC DEVICE

A method of nucleic acid sequencing. The method can include the steps of (a) providing a polymerase tethered to a solid support charge sensor; (b) providing one or more nucleotides, whereby the presence of the nucleotide can be detected by the charge sensor; and (c) detecting incorporation of the nucleotide into a nascent strand complementary to a template nucleic acid.

INTEGRATED BIOSENSOR

The present disclosure relates to an integrated chip having an integrated bio-sensor with horizontal and vertical sensing surfaces. In some embodiments, the integrated chip has a sensing device disposed within a substrate, and a lower metal wire over the substrate and electrically coupled to the sensing device. First and second metal vias are arranged on the lower metal wire at locations set back from sidewalls of the lower metal wire, and first and second upper metal wires respectively cover top surfaces of the first and second metal vias. A dielectric structure surrounds the lower metal wire, the first and second metal vias, and the first and second upper metal wires. A sensing well has sensing surfaces that extend along an upper surface of the lower metal wire and along sidewalls of the first and second metal vias and the first and second upper metal wires. 1. An integrated chip , comprising:a sensing device disposed within a substrate;a lower metal wire over the substrate and electrically coupled to the sensing device;first and second metal vias arranged on the lower metal wire at locations set back from sidewalls of the lower metal wire;first and second upper metal wires respectively covering top surfaces of the first and second metal vias;a dielectric structure surrounding the lower metal wire, the first and second metal vias, and the first and second upper metal wires; anda sensing well comprising sensing surfaces extending along an upper surface of the lower metal wire and along sidewalls of the first and second metal vias and the first and second upper metal wires.2. The integrated chip of claim 1 , wherein the first and second upper metal wires laterally extend past interior sidewalls of the first and second metal vias facing the sensing well.3. The integrated chip of claim 1 , wherein the first and second upper metal wires are electrically coupled to the first and second metal vias claim 1 , respectively.4. The integrated chip of claim 1 , wherein the ...

Detection Comprising Signal Amplifier

The present invention relates to a method for detecting a target molecule, comprising forming a capturing complex comprising the target molecule; and binding the capturing complex with a signal amplifier, wherein the capturing complex has a net electrical charge; the signal amplifier has affinity to the capturing complex and has a like net electrical charge of the net electrical charge of the capturing complex. The invention improves the detection sensitivity and sensing limit of the detection. 1. A method for detecting a target molecule , comprising forming a capturing complex comprising the target molecule; and binding the capturing complex with a signal amplifier , wherein the capturing complex has a net electrical charge; the signal amplifier has affinity to the capturing complex and has a like net electrical charge of the net electrical charge of the capturing complex.2. The method according to claim 1 , which further comprises forming the capturing complex with a recognizing molecule which is able to capture the target molecule with affinity.3. The method according to claim 1 , wherein the capturing complex is attached on a solid surface or the capturing complex is spaced apart from the solid surface by a distance.4. The method according to claim 3 , wherein the solid surface is a transistor surface of a field-effect transistor (FET) or a metal surface of a surface plasmon resonance (SPR).5. The method according to claim 3 , wherein the material of the solid surface is polycrystalline silicon or single crystalline silicon.6. The method according to claim 1 , wherein the signal amplifier is an oligonucleotide molecule.7. The method according to claim 2 , wherein the signal amplifier is an oligonucleotide aptamer.8. The method according to claim 1 , which further comprises monitoring an electrical change occurring due to the binding of the capturing complex and the signal amplifier.9. The method according to claim 5 , wherein the solid surface is coupled with an ...

METHOD FOR DETECTING CARDIOVASCULAR DISEASE BIOMARKER

A method for analyzing concentration of a cardiovascular disease (CVD) biomarker in a liquid sample includes: applying the liquid sample to a biosensor, the biosensor including a transistor having a drain, a source, and a gate terminal disposed between the gate and the source, and a reactive electrode spaced apart from the gate terminal of the transistor and having a receptor immobilized thereon for specific binding with the CVD biomarker, the liquid sample being in contact with the gate terminal and the reactive electrode; applying a voltage pulse between the reactive electrode and the source, the voltage pulse having a pulse width; monitoring a response current in response to the voltage pulse; and analyzing the response current. 1. A method for analyzing concentration of a cardiovascular disease (CVD) biomarker in a liquid sample , comprising:applying the liquid sample to a biosensor, the biosensor including a transistor having a drain, a source, and a gate terminal disposed between the gate and the source, and a reactive electrode spaced apart from the gate terminal of the transistor, the reactive electrode having a receptor immobilized thereon for specific binding with the CVD biomarker in the liquid sample, the liquid sample being in contact with the gate terminal of the transistor and the reactive electrode;applying a voltage pulse between the reactive electrode and the source of the transistor, the voltage pulse having a pulse width;monitoring a response current, which is produced in response to the voltage pulse, within the pulse width from the biosensor; andanalyzing the response current that is correlated to the concentration of the CVD biomarker in the liquid sample.2. The method of claim 1 , wherein the CVD biomarker is Troponin I.3. The method of claim 1 , wherein the CVD biomarker is NT-proBNP.4. The method of claim 1 , wherein the receptor includes an antibody.5. The method of claim 1 , wherein the receptor includes an aptamer.6. The method of claim ...

Nanogrid electrochemical sensor for detection of biochemical species by electrochemical impedance spectroscopy

Improved electrochemical impedance spectroscopy assays are provided by electrodepositing metallic nanoparticles onto the working electrode for electrochemical impedance spectroscopy. The metallic nanoparticles provide improved assay sensitivity. Electrodeposition of the metallic nanoparticles firmly affixes them to the working electrode, thereby making it easier to clean the working electrode from one assay to the next assay without undesirably removing the metallic nanoparticles. 1. A method of performing electrochemical impedance spectroscopy for detection of chemical species , the method comprising:providing a working electrode for electrochemical impedance spectroscopy;bonding metallic nanoparticles to the working electrode with an electrodeposition process;conjugating the metallic nanoparticles with at least one first receptor species;detecting at least one first target species according to impedance changes at the working electrode caused by binding of the first target species to the first receptor species.2. The method of claim 1 , wherein the conjugating the metallic nanoparticles with at least one first receptor species is performed after the bonding metallic nanoparticles to the working electrode with an electrodeposition process.3. The method of claim 2 , further comprising:cleaning the first receptor species from the metallic nanoparticles without removing the metallic nanoparticles from the working electrode;conjugating the metallic nanoparticles with at least one second receptor species;detecting at least one second target species according to impedance changes at the working electrode caused by binding of the second target species to the second receptor species.4. The method of claim 1 , wherein the conjugating the metallic nanoparticles with at least one receptor species is performed prior to the bonding metallic nanoparticles to the working electrode with an electrodeposition process.5. The method of claim 1 , wherein the working electrode is ...

ION SENSOR BASED ON DIFFERENTIAL MEASUREMENT, AND PRODUCTION METHOD

Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution. 119-. (canceled)20. An ion sensor based on differential measurement comprising:a substrate whereon are integrated connection tracks;an electrode of a conductor material arranged to be in contact with a solution to measure;a first ion-selective field effect transistor and a second ion-selective field effect transistor electrically connected by the connection tracks to an ion measurement system, each of the first and second ion-selective field effect transistors being fixed on the substrate and having a gate;a structure coupled only on the first ion-selective field effect transistor configured to create a microreservoir on the gate of the first ion-selective field effect transistor, wherein the gate of the first ion-selective field effect transistor is arranged to be in contact with a reference solution and the gate of the second ion-selective field effect transistor is arranged to be in contact with the solution to measure; andat least one microchannel connecting the microreservoir with the exterior of the ion sensor through an outlet orifice of the at least one microchannel, the at least one microchannel configured to calibrate the ion sensor by filling or renewing the microreservoir with the reference solution and comprising a first longitudinal ...

GRAPHENE NANORIBBON SENSOR

Provided is a graphene nanoribbon sensor. The sensor includes a substrate, a graphene layer formed on the substrate in a first direction, and an upper dielectric layer on the graphene layer. Here, the graphene layer may have a plurality of electrode regions respectively separated in the first direction and a channel between the plurality of electrode regions. 1. A nanoribbon sensor comprising:a substrate;a graphene layer formed on the substrate in a first direction; andan upper dielectric layer on the graphene layer,wherein the graphene layer has a plurality of electrode regions respectively separated in the first direction and a channel region between the plurality of electrode regions, and the channel region has a smaller line width than the plurality of electrode regions.2. The nanoribbon sensor of claim 1 , wherein the graphene layer of the channel region has an edge exposed from the upper dielectric layer.3. The nanoribbon sensor of claim 2 , wherein the graphene layer comprises a single layer of carbon atoms.4. The nanoribbon sensor of claim 1 , wherein the graphene layer of the channel region has a line width of about 100 nm or less.5. The nanoribbon sensor of claim 1 , further comprising a lower dielectric layer between the substrate and the graphene layer.6. The nanoribbon sensor of claim 5 , wherein the lower dielectric layer and the upper dielectric layer comprise hexagonal boron nitride.7. The nanoribbon sensor of claim 5 , wherein the lower dielectric layer and the upper dielectric layer have the same width as the graphene layer.8. The nanoribbon sensor of claim 7 , wherein the lower dielectric layer claim 7 , the graphene layer claim 7 , and the upper dielectric layer having the same line width have a ribbon shape in the first direction. This U.S. non-provisional patent application claims priority under 35 U.S.C. §119 of Korean Patent Application No. 10-2012-0115434, filed on Oct. 17, 2012, the entire contents of which are hereby incorporated by ...

DEVICE AND A METHOD FOR ANLYSIS OF CELLS

A device for analysis of cells comprises: an active sensor area () presenting a surface for cell growth; a microelectrode array () comprising a plurality of pixels () in the active sensor area (), wherein each pixel () comprises at least one electrode () at the surface, wherein each pixel () is configured to control the configuration of the pixel circuitry and set a measurement modality of the pixel; recording circuitry having a plurality of recording channels (), wherein each pixel () is connected to a recording channel (), wherein each recording channel () comprises a reconfigurable component (), which is selectively controlled between being set to a first mode, in which the reconfigurable component () is configured to amplify a received pixel signal, and being set to a second mode, in which the reconfigurable component () is configured to selectively pass a frequency band of the received pixel signal. 1. A device for analysis of cells , said device comprising:an active sensor area presenting a surface for cell growth on the device;a microelectrode array comprising a plurality of pixels in the active sensor area, wherein each pixel comprises at least one electrode at the surface, wherein the at least one electrode is configured to form contact with cells for providing stimulating signals to cells and/or measuring electrical signals from cells, wherein each pixel further comprises pixel circuitry comprising at least one switch for setting a configuration of the pixel circuitry and wherein each pixel is configured to individually receive a control signal for controlling the configuration of the pixel circuitry and set a measurement modality of the pixel;recording circuitry having a plurality of recording channels, wherein each pixel is connected to a recording channel, the recording channel being configured to receive signals from the pixels in the active sensor area, andwherein each recording channel of the recording circuitry comprises a reconfigurable component, ...

SENSORS BASED ON NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTORS

Chemical sensors and methods of forming and making the same include an input terminal and an output terminal. A negative capacitance structure is configured to control a current passing horizontally from the input terminal to the output terminal, and has a first and second metal layer that are arranged vertically with respect to one another, and a ferroelectric layer positioned between the first and second metal layers. An electrode is in electrical contact with the negative capacitance structure, and is configured to change potential, to exceed a threshold, thereby triggering a discontinuous polarization change in the negative capacitance structure. 1. A chemical sensor , comprising:an input terminal;an output terminal;a negative capacitance structure, configured to control a current passing horizontally from the input terminal to the output terminal, comprising a first and second metal layer that are arranged vertically with respect to one another, and a ferroelectric layer positioned between the first and second metal layers; andan electrode in electrical contact with the negative capacitance structure, configured to change potential, to exceed a threshold, thereby triggering a discontinuous polarization change in the negative capacitance structure.2. The chemical sensor of claim 1 , wherein the ferroelectric layer is formed from a polyvinylidene fluoride.3. The chemical sensor of claim 2 , wherein the ferroelectric layer is formed from P(VDF-TrFe claim 2 , PbZrTi).4. The chemical sensor of claim 1 , wherein the input and output terminals are a source and drain region of a field-effect transistor and wherein the ferroelectric layer acts as a gate for the field-effect transistor.5. The chemical sensor of claim 1 , wherein the input and output terminals are a collector and drain of a bipolar junction transistor and wherein the ferroelectric layer acts as a base for the bipolar junction transistor.6. The chemical sensor of claim 1 , wherein the polarization change ...

LOCALIZED DESALTING SYSTEMS AND METHODS

Example apparatus, systems and methods to desalt a sample are disclosed. An example apparatus includes a substrate and a sensor disposed on the substrate. The sensor has a surface functionalized with a binding agent to interact with an analyte in a liquid sample when the liquid sample is in contact with the sensor surface. The example apparatus further includes an electrode disposed on the substrate to create an electric potential and move ions in the sample away from the surface of the sensor. 1. An apparatus comprising:a substrate;a sensor coupled to the substrate, the sensor to detect an analyte in a sample; anda first electrode to create an electric potential and reposition ions in the sample relative to a surface of the sensor.2. The apparatus of claim 1 , wherein the sample is a raw sample and does not contain a buffer solution of low ionic concentration.3. The apparatus of claim 1 , wherein the sensor comprises a field-effect transistor having a gate.4. The apparatus of claim 3 , wherein the gate is functionalized with a binding agent to interact with the analyte.5. The apparatus of claim 3 , wherein the gate comprises a nanostructure.6. The apparatus of claim 3 , wherein the first electrode is to reposition ions in the sample closer to the gate of the field-effect transistor.7. The apparatus of claim 1 , wherein the first electrode is substantially coplanar with the sensor on the substrate.8. The apparatus of further comprising a second electrode disposed on the substrate.9. The apparatus of claim 8 , wherein the sensor is located between the first electrode and the second electrode.10. The apparatus of claim 9 , wherein the first electrode is to provide a positive electric voltage or a negative electric voltage and the second electrode is a ground electrode.11. The apparatus of claim 9 , wherein the first electrode is to provide a positive electric voltage and the second electrode is to provide a negative electric voltage.12. The apparatus of claim 9 , ...

APPARATUS AND METHOD FOR COMPENSATING pH MEASUREMENT ERRORS DUE TO PRESSURE AND PHYSICAL STRESSES

A pH sensing apparatus includes an ion-sensing cell that includes a first half-cell including a first Ion-Sensitive Field Effect Transistor (ISFET) exposed to a surrounding solution; and a second reference half-cell exposed to the surrounding solution. The pH sensing apparatus further includes a pressure sensitivity compensation loop including a Non Ion-Sensitive Field Effect Transistor (NISFET). The pH sensing apparatus is configured to compensate for at least one of pressure and physical stresses using signals from the ion-sensing cell and feedback from the pressure sensitivity compensation loop. The pH sensing cell further includes a processing device configured to calculate a final pH reading compensated to minimize the at least one of pressure and physical stresses.

BIOLOGICAL SAMPLE ANALYSIS CHIP, BIOLOGICAL SAMPLE ANALYZER AND BIOLOGICAL SAMPLE ANALYSIS METHOD

A biological sample analysis chip including a first substrate, a membrane disposed on the first substrate, a first liquid tank which is provided with a first electrode, a plurality of second liquid tanks each of which is provided with at least one flow path and a second electrode; and a second substrate disposed below the first substrate, in which the plurality of second liquid tanks are substantially insulated from each other, the membrane disposed on the first substrate is disposed between the first liquid tank and the plurality of second liquid tanks so as to form a portion of the first liquid tank and a portion of the plurality of second liquid tanks, and the second substrate is provided with the at least one flow path and the second electrode so as to form a portion of the plurality of second liquid tanks. 1. A biological sample analysis chip comprising:a first substrate;a membrane disposed on the first substrate;a first liquid tank which is provided with a first electrode;a plurality of second liquid tanks each of which is provided with at least one flow path and a second electrode; anda second substrate disposed below the first substrate, whereinthe plurality of second liquid tanks are substantially insulated from each other,the membrane disposed on the first substrate is disposed between the first liquid tank and the plurality of second liquid tanks so as to form a portion of the first liquid tank and a portion of the plurality of second liquid tanks, andthe second substrate is provided with the at least one flow path and the second electrode so as to form a portion of the plurality of second liquid tanks.2. The biological sample analysis chip according to claim 1 , whereinthe membrane is provided with a plurality of pores corresponding to the plurality of second liquid tanks.3. The biological sample analysis chip according to claim 1 , whereinat least one flow path is formed of a through hole penetrating the second substrate.4. The biological sample ...

METHOD FOR ELECTRONIC BIOLOGICAL SAMPLE ANALYSIS

A biological sample analysis device includes a casing that encloses a biological sample delivery system hydraulically coupled to a sensor, wherein the sensor includes a plurality of Graphene transistors and each transistor covalently bonds with a biomarker causing the electrical properties of the transistor to measurably change when the biomarker is exposed to corresponding antibodies within an infected biological sample. 1. The method for electronic biological sample analysis comprising:introducing a biological sample to a sample chamber, the sample chamber comprising a sensor configured to output a first current range when the sample sensor is exposed to a sterile liquid and a second current range when the sensor is exposed to predetermined antibodies;applying a voltage to the sensor;measuring a current output from the sensor; anddetermining if the current output is within the first current range or the second current range.2. The method of claim 1 , wherein the sensor comprises one or more Graphene transistors and applying a voltage to the sensor comprises applying a drain-source voltage and a gate-source bias.3. The method of claim 1 , wherein the biological sample is blood claim 1 , serum claim 1 , urine claim 1 , or cerebral fluid.4. The method of claim 1 , wherein the measuring the current output from the sensor is performed at regular intervals.5. The method of claim 3 , further comprising plotting the current output over time and analyzing a trend.6. The method of claim 1 , further comprising flushing the biological sample from the sample chamber with a sterile solution.7. The method of claim 6 , further comprising re-introducing the biological sample to the sample chamber.8. The method of claim 7 , further comprising repeating for a plurality of cycles the flushing the biological sample from the sample chamber with a sterile solution and re-introducing the biological sample to the sample chamber and calculating a statistical average current output when the ...

WEARABLE DEVICES INCORPORATING ION SELECTIVE FIELD EFFECT TRANSISTORS

Techniques for measuring ion related metrics at a user's skin surface are disclosed. In one aspect, a method for operating a wearable device may involve determining, based on output of one or more ion selective field effect transistor sensors, various physiological conditions such as a state of hydration, a state of skin health, or the cleanliness of the wearable device or an associated garment. 1. A wearable device for monitoring cleanliness of the wearable device or a garment associated with the wearable device , comprising:an ion selective field effect transistor; anda reference electrode, wherein the ion selective field effect transistor and the reference electrode are configured to be in direct contact with a user's skin.2. The wearable device of claim 1 , wherein the reference electrode is selected from the group consisting of an Ag/AgCl electrode claim 1 , an Ag/AgCl plastic composite electrode claim 1 , an Ag/AgCl gel electrode claim 1 , an Ag/AgCl electrode coated with a permeable membrane claim 1 , a polypyrrole electrode claim 1 , and a poly(3 claim 1 ,4-ethylenedioxythiophene) electrode.3. The wearable device of claim 1 , wherein the reference electrode comprises a conductive polymer material claim 1 , wherein the conductive polymer is undoped or doped.4. The wearable device of claim 3 , wherein the conductive polymer material is doped with one or more mediators.5. The wearable device of claim 4 , wherein the one or more mediators comprise ferrocene and/or ferrocene derivatives.6. The wearable device of claim 1 , further comprising a temperature sensor claim 1 , wherein the temperature sensor is integrated with the ion selective field effect transistor claim 1 , and wherein the temperature sensor is configured to be in direct contact with the user's skin when the wearable device is in use.7. The wearable device of claim 1 , wherein the ion selective field effect transistor is incorporated into a housing claim 1 , wherein a portion of the ion selective ...

CMOS COMPATIBLE BIOFET

The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity. 1. A method of providing a BioFET device , comprising:providing a semiconductor substrate having a first surface and an opposing second surface; 'depositing a gate structure on a first surface of the semiconductor substrate and over a channel region;', 'forming a FET device on a semiconductor substrate, wherein the forming the FET device includes 'forming an interface material on the exposed channel region of the second surface of the semiconductor substrate in the opening.', 'etching an opening in an isolation layer disposed on a second surface of the semiconductor substrate, wherein the opening exposes the channel region of the FET device, the channel region including a portion of the second surface of the semiconductor substrate; and'}2. The method of claim 1 , further comprising:forming a source region and a drain region in the semiconductor substrate adjacent the gate structure, wherein the channel region interposes the source and drain regions.3. The method of claim 1 , forming a multi-layer interconnect (MLI) on the first surface of the semiconductor substrate.4. The method of claim 3 , wherein the MLI is closer to the first surface than the second surface of the semiconductor substrate.5. The method of claim 2 , wherein the semiconductor substrate is a silicon-on-insulator (SOI) substrate.6. The method of claim 5 , wherein the SOI substrate includes a first semiconductor layer and a ...

FIELD-EFFECT APPARATUS, ASSOCIATED APPARATUS AND METHODS

An apparatus comprising a channel member, first and second electrodes configured to enable a flow of electrical current from the first electrode through the channel member to the second electrode, and a supporting substrate configured to support the channel member and the first and second electrodes, wherein one or more of the supporting substrate and electrodes are configured such that a portion of the channel member is suspended to expose opposing surfaces of the portion, the exposed opposing surfaces comprising respective functional coatings thereon configured to facilitate variation of the flow of electrical current through the channel member. 115-. (canceled)16. An apparatus comprising a channel member , first and second electrodes configured to enable a flow of electrical current from the first electrode through the channel member to the second electrode , and a supporting substrate configured to support the channel member and the first and second electrodes ,wherein one or more of the supporting substrate and electrodes are configured such that a portion of the channel member is suspended to expose opposing surfaces of the portion, each of the exposed opposing surfaces comprising a functional coating thereon configured to facilitate variation of the flow of electrical current through the channel member.17. The apparatus of claim 16 , further comprises at least one gate electrode to which a voltage can be applied to vary the electrical current through the channel member claim 16 , wherein the functional coating on each of the exposed opposing surfaces comprises a dielectric material configured to inhibit a flow of electrical current between the at least one gate electrode and the channel member.18. The apparatus of claim 17 , further comprises one of:a side gate configuration in which a gate electrode is positioned laterally with respect to the channel member,a top gate configuration in which a gate electrode is positioned to overlie the channel member,a ...

ELECTRIC-FIELD-ASSISTED NUCLEOTIDE SEQUENCING METHODS

This disclosure describes, in one aspect, a method of electric-field-assisted nucleotide sequencing. Generally, the method includes performing an ion-sensitive nucleotide sequencing method, applying an electric field across the device while the nucleotide sequencing reactions are being performed so that ions released by the sequencing reactions are directed to contact with the ion-sensitive detector, and detecting at least a portion of the released ions in contact with the ion-sensitive detector. 1. A method comprising:providing a device comprising an array of reaction sites, at least a portion of the reaction sites comprising an ion-sensitive detector;adding a polynucleotide template and DNA sequencing reagents to at least a portion of the reaction sites comprising an ion-sensitive detector under condition effective to perform DNA sequencing reactions that release ions;applying an electric field across the device while the DNA sequencing reactions are being performed such that the released ions are directed to contact with the ion-sensitive detector; anddetecting at least a portion of the released ions in contact with the ion-sensitive detector.2. The method of further comprising:reversing the electric field directing detected ions away from the ion-sensitive detector;washing the released ions from the reaction site;adding fresh DNA sequencing reagents to the reaction site under condition effective to perform a DNA sequencing reaction that release ions;applying an electric field across the device while the DNA sequencing reaction is being performed such that the released ions are directed to contact with the ion-sensitive detector; anddetecting at least a portion of the released ions in contact with the ion-sensitive detector.3. The method of wherein the ion-sensitive detector comprises an ion-sensitive field effect transistor (ISFET) sensor or an avalanche ISFET sensor.4. The method of wherein the released ions comprise positively charged ions.5. The method of ...

METHOD AND APPARATUS FOR INCREASING A LIFESPAN OF NANOPORE-BASED DNA SENSING DEVICES

Techniques for increasing the lifespan of a nanopore DNA sensing device are disclosed. A related DNA sensing device may be formed by a process comprising forming a first electrode, forming a second electrode, disposing the first electrode and second electrode within an insulator, and disposing a lipid bilayer having a nanopore between the first electrode and second electrode. The forming of the second electrode may comprise forming a silver (Ag) layer, pressing a mold into the Ag layer to form a pattern in the Ag layer, removing the mold from the Ag layer, and exposing the Ag layer to an electrolyte. 1. A deoxyribonucleic acid (DNA) sensing device formed by a process , the process comprising:forming a first electrode; forming a silver (Ag) layer;', 'pressing a mold into the Ag layer to form a pattern in the Ag layer;', 'removing the mold from the Ag layer; and', 'exposing the Ag layer to an electrolyte;, 'forming a second electrode, wherein forming the second electrode comprisesdisposing the first electrode and the second electrode within an insulator;disposing a lipid bilayer having a nanopore between the first electrode and the second electrode.2. The DNA sensing device of claim 1 , wherein the forming of the Ag layer comprises electroplating or physical vapor deposition (PVD).3. The DNA sensing device of claim 1 , wherein the forming of the Ag layer comprises forming the Ag layer on a diffusion layer and an adhesion layer comprising:gold (Au) and chromium (Cr);titanium nitride (TiN); orany combination thereof.4. The DNA sensing device of claim 1 , further comprising:heating the Ag layer to a temperature of between one-hundred-fifty and four-hundred degrees Celsius prior to the pressing of the mold; andcooling the Ag layer after the pressing of the mold.5. The DNA sensing device of claim 1 , wherein the mold is a polymer mold configured to form the pattern in the Ag layer.6. The DNA sensing device of claim 1 , wherein:the forming of the Ag layer comprises forming ...

METHODS AND APPARATUS FOR MEASURING ANALYTES

Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. 1. A method of determining pixel values comprising:providing an array of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels having a reaction area and a chemically sensitive sensor configured to provide an analog output indicative of the reactions sensed within the reaction area for the pixel;selecting at least one row of pixels to be read out of the array;outputting pixel data for the selected rows onto buses for the columns at a first rate, wherein the sampling period of the first rate is a time period that is insufficient for the output signal from the chemical sensors to settle, such that the output signal is still transitioning to a final value during the first sampling period;converting pixel data from the column busses at a second rate that is multiple times the first rate such that an oversampled pixel data set is made for each pixel readout; anddetermining an estimated pixel value from the oversampled pixel data set for each pixel readout by implementing a settling correction that compensates for the incomplete settling of the output signal.2. The method of claim 1 , further comprising storing the oversampled pixel data set for each of the read out pixels to create a frame of pixel data and averaging the frame of pixel data to form an average frame of pixel data.3. The method of claim 2 , further comprising repeating the method for a plurality of rows to create a series of frames.43. The method of claim claim 2 , further comprising averaging the series of frames into a final frame. This application is continuation of U.S. application Ser. No. 16/436,827, filed Jun. 10, 2019. U.S. ...

NANOPORE DEVICE AND METHODS OF ELECTRICAL ARRAY ADDRESSING AND SENSING

A method of manufacturing and using a nanofluidic NAND transistor sensor array scheme including a plurality of nanopore channel pillars, a plurality of respective fluidic channels, a plurality of gate electrodes, a top chamber, and a bottom chamber includes placing a sensor substrate in an electrolyte solution comprising biomolecules and DNA. The method also includes placing first and second electrodes in the electrolyte solution (Vpp and Vss of the nanofluidic NAND transistor); forming the nanopore channel pillars; placing the gate electrodes and gate insulators in respective walls of the nanopore channel pillars; applying an electrophoretic bias in the first and second electrodes; applying a bias in the gate electrodes; detecting a change in an electrode current in the electrolyte solution caused by a change in a gate voltage; and detecting a change in a surface charge in nanopore channel electrodes in the respective fluidic channels. 1. A nanopore device for characterizing biopolymer molecules , comprising:a first selecting layer having a first plurality of independently addressable inhibitory electrodes disposed along a first axis of selection;a second selecting layer having a second plurality of independently addressable inhibitory electrodes disposed along a second axis of selection orthogonal to the first axis of selection, wherein the second selecting layer is disposed adjacent the first selecting layer; anda third electrode layer having a third independently addressable electrode, wherein the third electrode layer is disposed adjacent the second selecting layer, such that the first selecting layer, the second selecting layer, and the third electrode layer form a stack of layers along a Z axis and define a plurality of nanopore pillar.2. The device of claim 1 , wherein the plurality of nanopore pillars is disposed in an array of nanopore pillars along a plane orthogonal to the Z axis.3. The device of claim 2 , wherein each of the first plurality of ...

SINGLE-PARTICLE BRIDGE ASSAY FOR AMPLIFICATION-FREE ELECTRICAL DETECTION OF ULTRALOW-CONCENTRATION BIOMOLECULES AND NON-BIOLOGICAL MOLECULES

The invention relates generally to devices, systems, compositions, and methods for the detection of oligonucleotides, nucleic acids, antigens, antibodies, peptides, proteins, and non-biological molecules. 1. A device , comprising:an electrically-insulating substrate; anda first detecting unit, comprising:a source electrode disposed on the electrically-insulating substrate;a drain electrode; anda dielectric layer;wherein the dielectric layer is disposed between the source electrode and the drain electrode;wherein the drain electrode and the dielectric layer comprise an array of holes;wherein the holes in the drain electrode and the dielectric layer are aligned; andat least one capture unit, comprising:a capture nanoparticle;wherein the capture nanoparticle is in contact with the source electrode; and wherein the nanoparticle is substantially centered in the holes of the drain electrode and the dielectric layer; and wherein the capture nanoparticle is a metal, semiconductor, or magnetic nanoparticle.2. The device of claim 1 , further comprising:a probe nanoparticle;wherein the probe nanoparticle forms a nanoparticle-bridge conjugate with the capture nanoparticle in the presence of a target molecule;wherein the probe nanoparticle in the nanoparticle-bridge conjugate provides an electrical path between the capture nanoparticle and the drain electrode.3. The device of claim 1 , further comprising:a first oligonucleotide target;wherein the capture nanoparticle comprises a first single-stranded oligonucleotide having a first nucleotide sequence complementary to a portion of the first oligonucleotide target; and wherein the capture nanoparticle is a metal, semiconductor, or magnetic nanoparticle; anda plurality of probe nanoparticles;wherein the probe nanoparticles comprise at least one nanoparticle and a probe oligonucleotide complementary to at least a portion of the first oligonucleotide target different than the portion complementary to the first nucleotide sequence; ...

pH SENSOR WITH BONDING AGENT DISPOSED IN A PATTERN

Embodiments described herein provide for a pH sensor that comprises a substrate and an ion sensitive field effect transistor (ISFET) die. The ISFET die includes an ion sensing part that is configured to be exposed to a medium such that it outputs a signal related to the pH level of the medium. The ISFET die is bonded to the substrate with at least one composition of bonding agent material disposed between the ISFET die and the substrate. One or more strips of the at least one composition of bonding agent material is disposed between the substrate and the ISFET die in a first pattern. 1. A pH sensor comprising:a substrate;an ion sensitive field effect transistor (ISFET) die including an ion sensing part that responds to pH, wherein the ISFET die is bonded to the substrate; wherein the ion sensing part of the ISFET die is configured to be exposed to a medium, and wherein the ion sensing part outputs a signal related to a pH level of the medium; andone or more strips of at least one composition of a bonding agent material disposed in a first pattern between the substrate and the ISFET die.2. The pH sensor of claim 1 , further comprising:one or more strips of a second composition of a bonding agent material disposed between the substrate and the ISFET die in a second pattern, wherein the coefficient of thermal expansion (CTE) of the second composition is different from the CTE of the at least one composition such that at different temperatures the two materials induce forces on the die in different directions.3. The pH sensor of claim 2 , wherein the second pattern further comprises one or more strips of the second composition of bonding agent material that are disposed orthogonally to the one or more strips disposed in the first pattern of the at least one composition.4. The pH sensor of claim 1 , further comprising:an inert material, wherein the inert material supports a portion of the ISFET die and does not exert a force due to CTE on the said portion of the ISFET ...

pH SENSOR WITH SUBSTRATE OR BONDING LAYER CONFIGURED TO MAINTAIN PIEZORESISTANCE OF THE ISFET DIE

Embodiments described herein provide for a pH sensor that is configured for use over a pressure and temperature range. The ISFET die of the pH sensor is bonded to the substrate of the pH sensor with a bonding layer that is disposed between the substrate and the ISFET die. The pressure and temperature change across the pressure and temperature range generates an environmental force in the pH sensor. Further, the substrate or the bonding layer or both change volume over the pressure and temperature range, and the substrate or the bonding layer or both are configured such that the volume change induces a counteracting force that opposes at least a portion of the environmental force. The counteracting force is configured to maintain the change in piezoresistance of the ISFET die from the drain to the source to less than 0.5% over the pressure and temperature range. 1. A pH sensor configured for use over a pressure and temperature range , the pH sensor comprising:a substrate;an ion sensitive field effect transistor (ISFET) die including an ion sensing part that responds to pH, wherein the ISFET die is bonded to the substrate, wherein the ion sensing part of the ISFET die is configured to be exposed to a medium, and wherein the ion sensing part outputs a signal related to a pH level of the medium;a bonding layer disposed between the substrate and the ISFET die, the bonding layer bonded to the substrate and the ISFET die, and wherein the bonding layer includes a first composition of bonding agent material;wherein pressure and temperature change across the pressure and temperature range generates environmental force in the pH sensor; andwherein at least one of the bonding layer or the substrate changes volume over the pressure and temperature range, wherein the at least one of the bonding layer or substrate is configured such that the volume change induces a counteracting force that opposes at least a portion of the environmental force, and wherein the counteracting force ...

ION SENSOR BASED ON DIFFERENTIAL MEASUREMENT, AND PRODUCTION METHOD

Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution. 119-. (canceled)20. A device comprising an ion sensor based on differential measurement , wherein the sensor comprises:(i) a substrate whereon are integrated connection tracks;(ii) an electrode of a conductor material arranged to be in contact with a solution to measure;(iii) a first ion-selective field effect transistor and a second ion-selective field effect transistor electrically connected by the connection tracks to an ion measurement system, each of the first and second ion-selective field effect transistors being fixed on the substrate and having a gate;(iv) a structure coupled only on the first ion-selective field transistor configured to create a microreservoir on the gate of the first ion-selective field effect transistors, wherein the gate of the first ion-selective field effect transistor is arranged to be in contact with a reference solution and the gate of the second ion-selective field effect transistor is arranged to be in contact with the solution to measure; and,(v) at least one microchannel connecting the microreservoir with the exterior of the ion sensor through an outlet orifice of the at least one microchannel, the at least one microchannel configured to calibrate the ion sensor by filling or renewing the microreservoir with the ...