Nonvolatile memory device and method of manufacturing the same.

Nonvolatile memory device and method of manufacturing the same

Номер патента: US20090258473A1
Опубликовано: 15-10-2009
Автор(ы): Byung-hong Chung, Cha-Won Koh, Hyun Park, Jai-Hyuk Song, Jeong-lim Nam, Sang-gyun Woo, Seok-Hwan Oh, Yool Kang
Принадлежит: Individual
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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