Method for making microstructures by converting porous silicon into porous metal or ceramics
Номер патента: EP2272091A1
Опубликовано: 12-01-2011
Автор(ы): Marco Balucani
Принадлежит: Rise Tech Srl
Опубликовано: 12-01-2011
Автор(ы): Marco Balucani
Принадлежит: Rise Tech Srl
Реферат: A method for making a micro structure (100) is proposed. The method starts with the step of providing a silicon substrate (102), which has a main surface. A porous silicon layer (103) - extending into the silicon substrate from the main surface - is then formed. The method continues by etching the porous silicon layer selectively to obtain a set of projecting microelements of porous silicon (112); each projecting microelement projects from a remaining portion of the silicon substrate ( 106), thereby exposing a corresponding external surface. The projecting microelements are then treated to obtain a set of corresponding conductive (115) or insulating (115 ') microelements; each conductive or insulating microelement is obtained by converting at least a prevalent portion of the porous silicon (extending into the corresponding projecting element from the external surface) into porous metal or ceramics, respectively.
METHOD FOR OBTAINING GAS-SENSITIVE ELEMENT BASED ON MULTI-LAYERED STRUCTURE OF POROUS SILICON ON THE INSULATOR AND SnOX
Номер патента: RU2674406C1. Автор: Валерий Викторович Болотов,Константин Евгеньевич Ивлев,Егор Владимирович Князев,Владислав Евгеньевич Росликов,Екатерина Александровна Росликова. Владелец: Федеральное государственное бюджетное учреждение науки Омский научный центр Сибирского отделения Российской академии наук (ОНЦ СО РАН). Дата публикации: 2018-12-07.