Integrated Circuitry And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells.

Integrated Circuitry And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells

Номер патента: US20220068958A1
Опубликовано: 03-03-2022
Автор(ы): Hopkins John D., Scarbrough Alyssa N.
Принадлежит: MICRON TECHNOLOGY, INC.
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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